TW574610B - Resist remover composition - Google Patents

Resist remover composition Download PDF

Info

Publication number
TW574610B
TW574610B TW090112453A TW90112453A TW574610B TW 574610 B TW574610 B TW 574610B TW 090112453 A TW090112453 A TW 090112453A TW 90112453 A TW90112453 A TW 90112453A TW 574610 B TW574610 B TW 574610B
Authority
TW
Taiwan
Prior art keywords
photoresist
page
water
compound
weight
Prior art date
Application number
TW090112453A
Other languages
English (en)
Chinese (zh)
Inventor
Ji-Heum Baek
Chang-Il Oh
Sang-Dae Lee
Jong-Sun Yoo
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Application granted granted Critical
Publication of TW574610B publication Critical patent/TW574610B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW090112453A 2000-01-14 2001-05-23 Resist remover composition TW574610B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2000-0001774A KR100378551B1 (ko) 2000-01-14 2000-01-14 레지스트 리무버 조성물

Publications (1)

Publication Number Publication Date
TW574610B true TW574610B (en) 2004-02-01

Family

ID=19638690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090112453A TW574610B (en) 2000-01-14 2001-05-23 Resist remover composition

Country Status (2)

Country Link
KR (1) KR100378551B1 (ko)
TW (1) TW574610B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566056B (zh) * 2008-12-24 2017-01-11 三星顯示器公司 用於移除光阻圖案之組成物及使用組成物來形成金屬圖案之方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483372B1 (ko) * 2001-11-02 2005-04-15 주식회사 아담스테크놀로지 포토레지스트용 수계 박리액
TWI516879B (zh) * 2009-09-09 2016-01-11 東友精細化工有限公司 形成銅系配線用光阻剝離劑組成物、使用其來製造半導體裝置及平板顯示器之方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566056B (zh) * 2008-12-24 2017-01-11 三星顯示器公司 用於移除光阻圖案之組成物及使用組成物來形成金屬圖案之方法

Also Published As

Publication number Publication date
KR20010073409A (ko) 2001-08-01
KR100378551B1 (ko) 2003-03-29

Similar Documents

Publication Publication Date Title
JP4814356B2 (ja) はく離及び洗浄用の組成物並びにそれらの使用
US6140027A (en) Photoresist remover composition
KR100786606B1 (ko) 기판으로부터 포토레지스트 및/또는 에칭 잔류물을제거하기 위한 조성물 및 이의 용도
JP4373457B2 (ja) フォトレジストのための組成物及び方法
KR100700998B1 (ko) 기판으로부터 잔사를 제거하기 위한 조성물 및 그의 사용방법
US7674755B2 (en) Formulation for removal of photoresist, etch residue and BARC
TW508478B (en) Resist stripper composition
KR20080046073A (ko) 포토레지스트, 에칭 잔류물 및 ｂａｒｃ를 제거하기 위한제제
KR20050110955A (ko) 포토레지스트용 스트리퍼 조성물 및 이를 포토레지스트박리에 사용하는 방법
US7015183B2 (en) Resist remover composition
TW574610B (en) Resist remover composition
TW526397B (en) Resist remover composition
US20040185370A1 (en) Resist remover composition
TW426816B (en) Hydroxylamine-gallic compound composition and process
TW591347B (en) Resist remover composition
TWI228640B (en) Photoresist remover composition
TW520470B (en) Photoresist remover composition
US6861210B2 (en) Resist remover composition

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees