&、發明說明 【發明所屬之技術領域】 —本發明係與表面鐘製薄膜技術有關，更詳而言之是指 :種以雙離子槍濺鍍薄膜於微米/奈米級結構二 决〇 【先前技術】 在向科技領域的半導體或是微機電製程當中，其元件 面甚且複雜的微米/奈綠結構表叫微米/奈米級 1〇 洞或溝槽)上所鍍製的薄膜厚度若有不均勻的情形 趣時’將對孩元件的性質及後續製程有嚴重的不良影 曰’、為此，諸多表面錢薄膜的技術便孕育而生 件較佳鍍製薄膜者。 、常見在微米/奈米級結㈣機製薄_方法如化學氣 相/儿積法（Chemical Vapor Deposition)，其可經由調整反應 15參數以於基板（被鍍物）表面之微米/奈米級結構孔洞壁面上 生成較均句的薄膜，但，如果微米/奈米級結構孔洞的深寬 比過高，則氣體進入孔洞深處的量將不足，其造成孔洞底 部的薄膜會有太薄的情形發生，又，化學氣相沉積法所使 用的設備及原料成本較高，且其傳輸及反應機制複雜為其 20 鍊點所在。 另有以物理氣相沉積法（Physical Vapor Deposition)為 鍍製薄膜加工’如常用的電漿濺鍍法，其利用電漿離予將 一革巴材的組成元素轟擊出來而沉積於一基板上以形成薄 膜，惟，在電漿中的原子之自由路徑較短且其行進方向並 0續次頁（發明說明頁不敷使用時，請註記並使用續頁） -4- 574384 麵說明_育 無方向性，故無法獲得較佳的階梯覆蓋效果，對於微米/各 米級結構孔洞而言容易有孔洞底部無薄膜沉積之情形發 生； /又 又，有長距離濺鍍(Long-throw deposition)及加裝準直 5管（Collimator)濺鍍等二種具有方向性的濺鍍方法，前者係 將靶材與基板距離拉長，使得只有某一部份角度的原子才 能到達基板，並可以在較深的孔洞底部沉積薄膜，但由於 只有少部份的原子可以到達基板，其餘原子則沉積到真空 腔體的其他地方，遂造成鍍率降低及靶材浪費，再者，由 10 於原子必須長距離運動及避免與其他原子產生碰撞，故其 必須在較低壓力下運作，所以電漿的運作壓力則成為此種 方法的使用限制；而該加裝準直管於輕材與基板之間的方 式雖不必將靶材與基板距離拉遠，即可讓固定角度的原子 到達基板’惟，對於其他非固定角度的大角度原子而言， 15則將濺鍍於準直管上並形成堆積，致需經常更換準直管， 其同樣地造成材料浪費。 是以，上述加工方法常因微米/奈米級結構孔洞的陰影 遮蔽效應或是原予動能不足而致鍍率降低及造成材料浪 費，有鑒於此，本案發明人乃經詳思細索及反覆實驗，並 20積多年從事相關行業之研究開發經驗，終而有本發明之產 生。 【發明内容】 即，本發明之主要目的在於提供一種以雙離子搶濺鍍 -5- 574384& Description of the invention [Technical field to which the invention belongs]-The present invention is related to the surface clock thin film technology, and more specifically refers to: a type of dual-ion gun sputtered thin film with a micron / nano level structure. [Previous technology] In the semiconductor or micro-electromechanical process in the field of technology, the thickness of the thin film plated on the micrometer / nano green structure table called micrometer / nanoscale 10 holes or grooves) If there is an uneven situation, there will be a serious adverse effect on the nature of the device and subsequent processes. For this reason, many surface film technologies have been bred to produce better film-coated ones. 3. Thinning of micro- / nano-scale crusting mechanism is common _ methods such as Chemical Vapor Deposition, which can be adjusted to 15 μm / nano level on the surface of the substrate (substrate) by adjusting the reaction 15 parameters A more uniform film is formed on the wall surface of the structure hole. However, if the aspect ratio of the micro / nano structure hole is too high, the amount of gas entering the depth of the hole will be insufficient, which will cause the film at the bottom of the hole to be too thin. This situation has occurred. Moreover, the equipment and raw materials cost of the chemical vapor deposition method are relatively high, and its transmission and reaction mechanism is complicated as its 20 chain points are located. In addition, the physical vapor deposition method (Physical Vapor Deposition) is used for plating thin film processing, such as the commonly used plasma sputtering method, which uses plasma ionization to bombard the constituent elements of a leather material and deposit it on a substrate. In order to form a thin film, the free path of the atoms in the plasma is short and its direction of travel is 0. Continue to the next page (if the description page of the invention is not enough, please note and use the continuation page) Non-directional, so better step coverage cannot be obtained. For micro / micrometer structure holes, it is easy to have no thin film deposition at the bottom of the hole; / Also, long-throw deposition And the installation of two directional sputtering methods such as collimator 5 tube (Collimator) sputtering, the former is to extend the distance between the target and the substrate, so that only atoms of a certain angle can reach the substrate, and A thin film is deposited at the bottom of the deeper holes, but because only a small number of atoms can reach the substrate, the remaining atoms are deposited elsewhere in the vacuum cavity, resulting in a decrease in plating rate and wasted target material. Atoms must move over long distances and avoid collisions with other atoms, so they must operate at lower pressures, so the operating pressure of the plasma becomes the limitation of this method; and the installation of collimators on light materials and substrates Although the method does not require the target to be farther away from the substrate, fixed-angle atoms can reach the substrate. However, for other non-fixed-angle large-angle atoms, 15 will be sputtered on the collimator tube and This builds up and necessitates frequent replacement of the collimator tube, which likewise causes material waste. Therefore, the above processing methods often reduce the plating rate and cause material waste due to the shadow masking effect of micro / nano-level structure holes or insufficient original kinetic energy. In view of this, the inventor of this case has carefully considered and repeated Experiments and more than 20 years of experience in research and development in related industries have resulted in the invention. [Summary of the Invention] That is, the main object of the present invention is to provide a dual ion sputter plating -5- 574384
薄膜於歸/奈米㈣構表面之核， 結構薄膜厚度的均句性與連續性。〃〜微 米/奈米級 又，本發明之次 5 薄膜於微米/奈米級結構表面之t提二一二：離予搶錢錢 結構孔洞底部及壁面薄膜的覆蓋率。、曰ί微米/奈米級 本發明之又-目的在於提供—種 於微米/奈米級結構表 、 離子搶濺鍍薄膜 緣以達成上述之目：万本發材料的浪費。 10 搶濺鍍薄膜於微米/奈米級結構表面=广：種以雙離子 離子槍對-㈣進行4擊 /’係利用一濺鍍 成笼睦t丁私材原子鍍製到一基板上形 ==槍則對該表面形成有薄膜之基板預定 ^置處進㈣擊h，讀魏處細獲得均勻膜厚。 【實施方式】 以下，兹列舉本發明之較佳實施例，並配合下列圖示 詳細說明於后，其中： 第一圖為本發明一較佳實施例之鍍膜裝置示意圖。 第二圖為本發明上述較佳實施例於鍍膜加工時之微觀 示意圖。 本發明以雙離子槍濺鍍薄膜於微米/奈米級結構表面之 方法，其鍍膜裝置裝設於一真空腔體（圖未示）内部，該鍍膜 装置包括有一濺鍍離子槍10、一加工離子槍20、一靶材30 與一基板40(被鏡物），其等相關位置如第一圖所示，即， -6- 574384 _ 發明說明續頁 該濺鍍離子槍10之槍口對準該斜設的靶材30，而該加工 離子槍20之槍口對準該基板40，上述各構件並可以預定 的角度做適當的調整，且該基板40更可視表面濺鍍加工的 需要而做旋轉動作；又，該濺鍍離子槍10與該加工離子槍 5 20可經過預先的調整以控制其等轟擊離子束的能量，而該 革巴材30及該基板40可為金屬或非金屬材料。 當進行鍍膜加工時，該濺鍍離子槍10之轟擊離子束係 直接對該靶材30進行轟擊以將靶材30組成元素（原子或分 子）轟出，由於該靶材30係以預定角度擺置，故其被轟出 10 的原子31將以一定的動能循固定路徑朝該基板40方向前 進，並以最佳的衝擊角度撞擊該基板40表面，使得原子31 於該基板40表面沉積並形成一薄膜，而上述原子31的最 佳衝擊角度係為原子31行進方向與基板40表面呈90度夾 角，如第二圖之鍍膜微觀示意圖所示，該自靶材30脫離的 15 原子31正以垂直向撞擊基板40表面，因此原子31得以到 達基板40不平整表面的深處，如圖二之微米/奈米級結構 孔洞底部； 當該濺鍍離子槍10進行鍍膜加工之同時，該加工離子 槍20所產生的轟擊離子束以與基板40表面夾角介於45度 20 角至90度角之間為佳，且該轟擊離子束以適當能量輸出並 直接對剛沉積在微米/奈米級結構孔洞上之薄膜進行具有 蝕刻效果的轟擊加工，該加工離子21撞擊堆疊在微米/奈 米級結構孔洞洞口附近的薄膜原子31(或分子），造成該處 的原子31(或分子）重新排列且再濺鍍至孔洞其他部位並沉 -7- 574384 _ 發明說明續頁 積，如此，經加工後的基板40表面將獲得較均勾的膜厚， 且更增加孔洞底部及壁面薄膜的覆蓋率。 最後，再將本發明之優點整理如下： 1 ·本發明之鍍膜裝置各構件可適當調整角度，及該 5 雙離子槍的轟擊加工，造成濺鍍原子動能充足，故於非平 整或是複雜的微米/奈米級結構表面（如微米/奈米級結構孔 洞）鍍製使用時，除了可獲得均勻且連續性的鍍製薄膜外， 更可避免怒材使用的浪費。 2 ·本發明離子槍的工作壓力較低、原子之自由路徑 ίο 較長，且離子束具有方向性，因此適合較高深寬比的微米/ 奈米級結構孔洞鍍膜加工，使得微米/奈米級結構孔洞底部 及壁面獲得極佳的薄膜覆蓋效果，以改善孔洞的陰影遮蔽 效應所造成不易鍍膜的問題。 3·本發明所使用設備及原料成本較化學氣相沉積法 15 所使用的設備及原料成本為低，具有降低成本的效益。 必須加以說明的是，本發明濺鍍離子槍及加工離子槍 之加工時序亦可非為同時，只要在該基板上之靶材原子尚 未穩定形成薄膜前，均可延後啟動該加工離子槍；另外， 為使薄膜更均勻形成於該基板上，上述實施例係將該基板 20 於加工之同時旋轉或移動，使得加工離子束以不同角度為 位置轟擊該基板，因此此種功能亦可改以將該加工離子槍 移動而基板不動之方式取代之。 综上所述，本發明於同類產品中實具有其進步實用 性，且使用上方便，又，本發明於申請前並無相同物品見 -8- 574384 發明說明續頁 於刊物或公開使用，是以，本發明實已具備發明專利要件， 爰依法提出申請。 唯，以上所述者，僅為本發明之較佳可行實施例而已， 故舉凡應用本發明說明書及申請專利範圍所為之等效結構 5 變化，理應包含在本發明之專利範圍内。 -9- 574384 發明說明續頁 【圖式簡單說明】 第一圖為本發明一較佳實施例之鍍膜裝置示意圖。 第二圖為本發明上述較佳實施例於鍍膜加工時之微觀 示意圖。 【圖號說明】 11 濺鐘離子槍 21 加工離子槍 21 加工離子 30 革巴材 31 被轟出的原子 10 40 基板 -10-The film is at the core of the normalized / nanostructured surface, and the thickness and thickness of the structured film are uniform and continuous. 〃 ~ micron / nano level In addition, the second aspect of the present invention is to increase the thickness of the micron / nano level structure surface by two or two: the rate of coverage of the bottom of the structure hole and the wall film. Micron / nano level The present invention also aims at providing a kind of micron / nano level structure table and ion-spray sputtering film to achieve the above purpose: waste of materials. 10 Sputter coating film on the surface of micron / nano level structure = wide: a kind of double-ion ion gun with 4 shots / 'is used to form a metal plate on a substrate using a sputtering method. == The gun will hit h at the predetermined place where the thin film is formed on the surface, and read Wei to obtain a uniform film thickness. [Embodiment] Hereinafter, the preferred embodiments of the present invention will be enumerated, and will be described in detail with the following drawings, wherein: The first diagram is a schematic diagram of a coating device according to a preferred embodiment of the present invention. The second figure is a microscopic schematic view of the above-mentioned preferred embodiment of the present invention during coating processing. In the present invention, a method for sputtering a thin film on a micro / nano level structure surface by a dual ion gun is provided. The coating device is installed inside a vacuum cavity (not shown). The coating device includes a sputtering ion gun 10 and a processing device. The ion gun 20, a target 30, and a substrate 40 (object to be mirrored), and their related positions are shown in the first figure, that is, -6- 574384 _ Description of the invention continued on the muzzle of the sputter ion gun 10 The oblique target 30 is aligned, and the muzzle of the processed ion gun 20 is aligned with the substrate 40. The above-mentioned components can be appropriately adjusted at a predetermined angle, and the substrate 40 can be more according to the needs of the surface sputtering process. The rotating ion gun 10 and the processed ion gun 5 20 can be adjusted in advance to control the energy of the bombarding ion beam, and the leather material 30 and the substrate 40 can be metal or non-metal. material. When the coating process is performed, the bombarding ion beam of the sputtering ion gun 10 directly bombards the target 30 to bombard the constituent elements (atoms or molecules) of the target 30. Since the target 30 is swinging at a predetermined angle Therefore, the atom 31 which is bombarded 10 will follow a fixed path toward the substrate 40 with a certain kinetic energy, and will hit the surface of the substrate 40 at an optimal impact angle, so that the atom 31 is deposited and formed on the surface of the substrate 40 A thin film, and the optimal impact angle of the atom 31 described above is an angle of 90 degrees between the traveling direction of the atom 31 and the surface of the substrate 40. As shown in the microscopic diagram of the coating in the second figure, the 15 atoms 31 separated from the target 30 are The vertical impact on the surface of the substrate 40, so that the atom 31 can reach the depth of the uneven surface of the substrate 40, as shown in the bottom of the micro / nano structure hole in Figure 2. When the sputtering ion gun 10 performs the coating process, the processed ion The bombarding ion beam generated by the gun 20 preferably has an included angle between the surface of the substrate 40 and an angle of 45 ° 20 ° to 90 °, and the bombardment ion beam is output with an appropriate energy and directly impacts the newly deposited micron / nanoscale. The thin film on the pore is subjected to bombardment processing with an etching effect. The processed ion 21 hits the thin film atom 31 (or molecule) stacked near the hole of the micro / nano structure hole, causing the rearrangement of the atom 31 (or molecule) there. And then sputter to other parts of the hole and sink-7- 574384 _ Description of the continuation sheet, so that the processed substrate 40 surface will get a more uniform film thickness, and increase the coverage of the hole bottom and wall film . Finally, the advantages of the present invention are summarized as follows: 1. The components of the coating device of the present invention can be appropriately adjusted in angle, and the bombardment processing of the 5 dual ion guns results in sufficient kinetic energy of the sputtered atoms, so it is not flat or complicated. When the micro / nano structure surface (such as micro / nano structure holes) is used for plating, in addition to obtaining a uniform and continuous plated film, the waste of angry materials can be avoided. 2 · The ion gun of the present invention has a low working pressure, a long free path of the atom, and a directional ion beam, so it is suitable for the coating of micro / nano structure holes with a high aspect ratio, making the micro / nano level The bottom of the structure hole and the wall surface have an excellent film coverage effect to improve the problem of difficult coating due to the shadowing effect of the hole. 3. The cost of the equipment and raw materials used in the present invention is lower than the cost of the equipment and raw materials used in the chemical vapor deposition method 15 and has the benefit of reducing costs. It must be noted that the processing sequence of the sputtering ion gun and the processing ion gun of the present invention may not be the same. As long as the target atoms on the substrate have not yet formed a stable film, the processing ion gun can be postponed; In addition, in order to make the film more uniformly formed on the substrate, the above embodiment rotates or moves the substrate 20 while processing, so that the processed ion beam bombards the substrate at different angles, so this function can also be changed to Instead of moving the processed ion gun without moving the substrate. In summary, the present invention has its practicality and similarity in similar products, and it is convenient to use. Moreover, the present invention does not have the same item before the application. See -8574574. Description of the Invention Continued pages are published in publications or publicly used. Therefore, the present invention already has the elements of an invention patent, and the application is filed according to law. However, the above are only the preferred and feasible embodiments of the present invention. Therefore, any changes in the equivalent structure 5 in applying the description of the present invention and the scope of patent application should be included in the patent scope of the present invention. -9- 574384 Description of the invention continued [Simplified description of the drawings] The first figure is a schematic diagram of a coating device according to a preferred embodiment of the present invention. The second figure is a microscopic schematic view of the above-mentioned preferred embodiment of the present invention during coating processing. [Illustration of drawing number] 11 Bell splash ion gun 21 Process ion gun 21 Process ion 30 Gaba material 31 Blasted atom 10 40 Substrate -10-