TW574172B - SiC clamp manufacturing method - Google Patents
SiC clamp manufacturing method Download PDFInfo
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- TW574172B TW574172B TW91104358A TW91104358A TW574172B TW 574172 B TW574172 B TW 574172B TW 91104358 A TW91104358 A TW 91104358A TW 91104358 A TW91104358 A TW 91104358A TW 574172 B TW574172 B TW 574172B
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Description
574172574172
發明領域 本發明係關於一種平面顯示板用的玻璃基板等的較大 型玻璃基板進行熱處理時,用於載置該玻璃基板所使用 板狀夾具。 ' 習知技術之描述 在平面顯示板的製造工程中,作為熱處理步驟,在平 面顯示板的玻璃基板上實施印模後,要進行乾燥和煆燒處 理’在進行這種熱處理時,需要載置用於玻璃基板的=狀 熱處理用夾具。這種玻璃基板熱處理用夾具,以前使用的 是結晶化的玻璃質夹具。 、 但疋’結晶化玻璃質的熱處理夾具,由於反復使用衾士 晶相會發生變化,產生彎曲變形,所以,在使用較短的時 間期間後就不能再使用。另外,結晶化破璃質熱處理夾 具,由於其剛性率低到8 0Gpa,在將夾具多段地塔組進行 玻璃基板的熱處理時,在2段以上的段中,夾具的中央部 分向下幫曲,存在處理的玻璃基板產生變形的情況。 而且,結晶化玻璃質熱處理用具,熱傳導率低至 lW/mK,升溫時和降溫時在夾具内易產生溫度分佈,在這FIELD OF THE INVENTION The present invention relates to a plate-shaped jig used for placing a large glass substrate such as a glass substrate for a flat display panel on which the glass substrate is subjected to heat treatment. '' Description of the conventional technology In the manufacturing process of a flat display panel, as a heat treatment step, after a stamp is implemented on the glass substrate of the flat display panel, drying and sintering are performed. Jig for heat treatment of glass substrates. This type of jig for heat treating glass substrates has conventionally used a crystallized glassy jig. However, since the heat treatment jig of 疋 'crystallized glass is repeatedly used, the crystal phase will change and bend. Therefore, it cannot be used after a short period of time. In addition, the crystallized glass-breaking heat treatment jig has a rigidity as low as 80 Gpa. When heat treatment is performed on the glass substrate of the multi-segment tower group of the jig, the central part of the jig is downwards in two or more stages. The processed glass substrate may be deformed. In addition, the thermal conductivity of crystallized glassy heat treatment appliances is as low as 1 W / mK, and temperature distribution in the fixture is easy to occur during heating and cooling.
種溫度分佈大時,玻璃基板在熱處理中生成處理斑紋,I 以,升溫和降溫都需要足夠長的時間,限制了處理速度 提高。 因此,最近,以前在燒製衛生陶器或瓷磚等的比較 型的製品時,使用的主相由碳化矽構成的熱處理夹具,也When this kind of temperature distribution is large, the glass substrate generates processing streaks during heat treatment, so that it takes a long time to increase and decrease the temperature, which limits the increase in processing speed. Therefore, recently, when the comparative products such as sanitary ware and ceramic tiles were fired, the heat treatment jig composed of silicon carbide was used as the main phase.
第5頁 574172Page 5 574172
试圖應用於在前述的玻璃基板的熱處理中。 、然而’以前在衛生陶器或瓷碑等的比較小型的製品在 燒成時,使用的主相是由碳化矽構成的熱處理用夾具通常 積在〇· 7来2以下,表面的平均算術粗糙度Ra超過2〇〇/z m, =T失具的臂曲等變形,在面積為〇 · 7米的情況下,允許3 宅^的強度,但疋,在使用平面顯示板等的玻璃基板的熱處 理^ ’面積更大,表面更光滑,要求變形更小。 例如’作為平面顯示板一種的等離子體顯示板用的玻 基板’因為基板自體推進大型化,其熱處理用的夾具也 使用面積為0· 9米2以上的大型化夾具,而允許彎曲等的變 =為1¾米以下。而且,如果在熱處理時,由於玻璃基板 ^熱處理夾具的熱膨脹差使兩者的接觸面產生磨擦,熱處 理炎具的表面粗糙度象現有技術的那樣大的話,會因這種 磨擦擦傷玻璃基板。這種擦傷的發生,隨著熱處理夾具的 加大而更顯著。 主相由碳化石夕構成的熱處理用夾具為了滿足前述玻璃 基板,處理的必要標準,通常需要對其表面進行研磨、溶 射、施釉等的表面加工以提高平面度。對於主相由碳化矽 構成的材貝’僅考慮提高其平面度而實施研磨加工時,進 行直到其表面成為鏡面狀的研磨,表面的粗糙度變得非常 小。$種傾向’在對由碳化矽粒子構成的成形體,在其氣 孔中含浸金屬矽燒成得到的含浸矽的碳化矽進行研磨 別顯著。 ' 但是’將玻璃基板載置在這種表面研磨成鏡面狀的熱It is attempted to be applied to the aforementioned heat treatment of a glass substrate. However, 'in the past, relatively small products such as sanitary pottery or porcelain monuments were fired, and the main phase used was silicon carbide. The heat treatment jigs usually accumulated below 0.7 to 2 and the average arithmetic roughness of the surface. Ra exceeds 200 / zm, = T loses the shape of the arm bend, etc. In the case of an area of 0.7 meters, the strength of 3 square meters is allowed, but 疋, the heat treatment of glass substrates such as flat display panels is used ^ 'Large area, smoother surface, requiring less deformation. For example, 'glass substrates for plasma display panels as a type of flat display panel', since the substrate itself is being enlarged, the heat treatment fixtures also use large-scale fixtures with an area of 0.9 m 2 or more. Change = below 1¾ meters. Moreover, if the contact surfaces of the two substrates are abraded due to the thermal expansion difference between the glass substrate and the heat treatment jig during heat treatment, the surface roughness of the heat treatment inflammator is as large as in the prior art, and the glass substrate will be scratched due to such friction. The occurrence of such abrasions becomes more significant as the heat treatment jig becomes larger. In order to meet the necessary standards for the aforementioned glass substrates and treatments, a heat treatment jig composed of a carbide phase is generally required to improve the flatness of the surface by grinding, spraying, or glazing the surface. In the case of a material made of silicon carbide whose main phase is made of silicon carbide, the surface roughness is very small when polishing is performed only to improve the flatness. The "type of tendency" is notable for polishing a silicon carbide-impregnated silicon carbide obtained by impregnating a silicon body with silicon carbide impregnated with metal silicon in the pores of a molded body composed of silicon carbide particles. 'But ’a glass substrate is placed on such a surface and polished into a mirror-like heat.
第6頁 574172 _案號91104358_年月曰 修正_ 五、發明說明(3) 處理炎具上時,由於玻璃基板在夾具上滑動定位費時,同 時熱處理後玻璃基板與熱處理夾具緊密接觸,難以將其分 離,由於緊密接觸,在熱處理中玻璃基板會發生斷裂、裂 紋等損傷。 另外,作為改善平面度的方法,在表面溶射或施釉與 玻璃層熱膨脹一致後,通過研磨加工提高平面度。但是, 在這種情況下,由於考慮提高平面度進行研磨加工表面加 工成鏡面狀,會產生與上述相同的問題。 而且,進行溶射,表面近旁的氣孔被溶射膜覆蓋,使 平面度提高,通過調整溶射原料的粒度可以控制平面度。 但是,使用粒度大的溶射原料,由於原料的粒度的起因使 溶射膜產生凸部,不僅不能改善表面粗糙度,相反擦傷了 玻璃基板表面。 由於熱處理結束後,玻璃基板從夾具上的卸出從操作 效率觀點考慮,通常通過設置吸盤等的吸著部件的自動機 進行,需要能夠使用自動機進行取出操作。假若為面積在 0. 7米2以下的熱處理夾具上載置的比較小型的玻璃基板, 用自動機可能進行卸出緊密接觸的夾具,但是,卸出時, 緊密接觸部分會產生微小的缺陷。 另外,必須在面積為0. 7米2以上的熱處理夾具上載置 比較大型的玻璃基板時,緊密接觸程度增加,難以用自動 機進行卸出操作。而且,在熱處理夾具上必須載置面積為 0. 9米2以上的比較大型的玻璃基板時,緊密接觸程度增加 更大,不僅不能用自動機進行卸出操作,而且在卸出時會Page 6 574172 _Case No. 91104358_ Years and Months Revision_ V. Description of the invention (3) When processing the inflammation fixture, it takes time to slide and position the glass substrate on the fixture. At the same time, the glass substrate is in close contact with the heat treatment fixture after heat treatment. Due to the close contact, the glass substrate may be damaged and cracked during heat treatment. In addition, as a method for improving the flatness, the surface flatness is improved by grinding after the surface is sprayed or glazed and the thermal expansion of the glass layer is consistent. However, in this case, since the flatness is considered and the surface is polished to a mirror-like surface, the same problem as described above occurs. In addition, when dissolution shooting is performed, the pores near the surface are covered with the dissolution shooting film to improve the flatness, and the flatness can be controlled by adjusting the particle size of the dissolution raw material. However, the use of a large-sized dissolution raw material causes convex portions of the dissolution film due to the particle size of the raw material, which not only cannot improve the surface roughness, but also scratches the surface of the glass substrate. Since the glass substrate is unloaded from the jig after the heat treatment is completed, it is usually performed by an automatic machine provided with a suction member such as a suction cup from the viewpoint of operation efficiency, and it is necessary to be able to use the automatic machine to perform the removal operation. If a relatively small glass substrate is placed on a heat treatment jig with an area of less than 0.7 m2, the close contact jig may be unloaded by an automatic machine. However, when it is unloaded, the close contact part may cause slight defects. In addition, when a relatively large-sized glass substrate must be placed on a heat treatment jig having an area of 0.7 m 2 or more, the degree of close contact increases, making it difficult to perform an unloading operation by an automatic machine. In addition, when a relatively large glass substrate with an area of 0.9 m 2 or more must be placed on a heat treatment jig, the degree of close contact increases even more. Not only cannot the unloading operation be performed by an automatic machine, but
574172 修正 發生斷裂、裂紋等重大缺陷。 作為其對策’試圖在熱處理夾具上加工空氣流通用的 孔’以防止緊密接觸,但會有降低夾具的剛性,加大彎曲 的問題。 ^ 發明概述 蓉於上述問題,本發明的目的是提供一種具有能夠抑 制^ ^自體隨時間變形或彎曲使熱處理中的玻璃基板變形 1穩士性和適宜的剛性,同時具有玻璃基板可有在比較短 時間南效率地進行均勻熱處理的優良的熱傳導性,並且改 善在大型玻璃基板的載置或取出時的卸出性的熱處理夾 具。 按照本發明,提供的熱處理夾具的特徵是,用於在玻 璃基板進行熱處理時,載置該玻璃基板使用的板狀熱處理 用爽具’主相由碳化矽構成,在表面上設置有凹凸形狀, 表面的算術平均粗糙度Ra為0· 0 1 -2 0 0" m,凹凸的平均間隔 Sm與算術平均粗糙度Ra的比(Sm/Ra)為50 0以下。 而且,在本發明中,(算術平均粗糙度Ra)和(凹凸 的平均間隔Sm)都是按JIS B 0 60 1 - 1 9 94定義的值。 本發明的熱處理夾具的主相由碳化矽構成的碳化石夕質 熱處理夾具。碳化石夕與以前作為玻璃基板的熱處理夾具的 材料廣泛使用的結晶化玻璃相比,由於其剛性高,即使多 段地的塔組彎曲也較小,可以抑制由夾具的彎曲引起的熱 處理中玻璃基板的變形。具體地說,剛性率優選在130Gpa574172 Correction Major defects such as fracture and crack occurred. As a countermeasure to this, 'it is attempted to process a hole for general air flow in a heat treatment jig' to prevent close contact, but there is a problem that the rigidity of the jig is reduced and the bending is increased. ^ Summary of the invention In view of the above problems, the object of the present invention is to provide a glass substrate that can suppress deformation ^ over time to deform the glass substrate during heat treatment. 1 Stability and appropriate rigidity. A heat treatment jig that performs uniform heat treatment in a relatively short period of time and performs excellent uniform heat treatment, and improves the releasability when placing or taking out a large glass substrate. According to the present invention, the heat treatment jig provided is characterized in that when a glass substrate is subjected to heat treatment, a plate-like heat treatment jig used for placing the glass substrate, whose main phase is made of silicon carbide, is provided with a concave-convex shape on the surface. The arithmetic average roughness Ra of the surface is 0 · 0 1 -2 0 0 " m, and the ratio (Sm / Ra) of the average interval Sm of irregularities to the arithmetic average roughness Ra is 50 or less. Further, in the present invention, both (arithmetic average roughness Ra) and (average interval Sm of irregularities) are values defined in accordance with JIS B 0 60 1-1 9 94. The main phase of the heat treatment jig of the present invention is a carbide heat treatment jig composed of silicon carbide. Compared with crystallized glass, which is widely used as a material for heat treatment fixtures of glass substrates, carbonized carbides are more rigid. Even if the tower group is bent in multiple stages, the bending is smaller. It can suppress the glass substrate during heat treatment caused by the bending of the fixture Of deformation. Specifically, the rigidity is preferably 130 Gpa
第8頁 574172Page 8 574172
曲更小是最 熱傳導率比 時間短,失 生成斑紋( 地進行熱處 而且,石炭化 成顆粒成長 期穩定地使 緊密接觸和 玻璃基板, 特別是用於 傷之特大型 夾具上更好 板顯示中主 優選的。 結晶化玻璃央具 具内的溫度分佈 )。因此, 理。具體地說, 矽質夾具也具有 的結日晶相,失 用。 微小缺陷,通過 具有0 . 7米2以上 載在卸出時有可 的玻璃基板,具 ’在近年推進大 要使用這樣的大 以上’如果在20 0Gpa以上,彎 此外,由於碳化石夕質夾具 顯著地高,進行升溫和降溫的 小,玻璃基板在熱處理中不易 與以前相比,可短時間高效率 熱傳導率優選為80W/mK以上。 象結晶化玻璃質夾具那樣的生 具自體隨時間變形小,可以長 本發明用於那種載置發生 1動機卸出困難的比較大型的 面積的熱處理用夾具上有效, 能發生斷裂、裂紋等的重大損 有0 · 9米2以上的面積的熱處理 型化的等離子體顯示板等的平 型玻璃基板。 在本發明中,為防止玻璃基板的緊密接觸,表面具有 凹凸形狀,表面的算術平均粗糙度Ra為〇· Ol-2 0 0/z m優選 〇·1-2 0μ m,更優選o.i-io" m,凹凸的平均間隔Sm與算術平 均粗糙度Ra的比(Sm/Ra)為5 0 0以下。 通過控制這種夾具表面的凹凸,在来具與玻璃基板之 間通過形成微細的空隙,可使空氣等氣體有流通的路徑, 防止兩者的緊密接觸。另外,由於有這樣的表面狀態,玻 璃基板載置在失具上時玻璃基板在夾具上移動滑動而引起 的位置偏移,因此容易定位。The smaller the curvature is, the shorter the thermal conductivity is than the time, and the formation of streaks is lost. (The ground is heat treated. Moreover, the charcoal is formed into particles and the growth period is stable to make close contact with the glass substrate, especially for better board display on the extra large fixture. Mainly preferred. Temperature distribution in crystallized glass fixtures). So, reason. Specifically, the silicon jig also has a crystalline phase, which is useless. Minor defects, with a glass substrate that can be loaded and unloaded at 0.7 m2, with a 'larger in recent years to use such large or larger', if it is more than 20 Gpa, it will be bent due to the carbon carbide It is remarkably high, and the temperature rise and fall are small, and the glass substrate is less likely to undergo heat treatment than before, and the thermal conductivity is preferably 80 W / mK or more in a short time and with high efficiency. A jig such as a crystallized vitreous jig has a small deformation over time, and can be used for a long time. The present invention is effective for a heat treatment jig that has a relatively large area where placement and removal are difficult, and cracks and cracks can occur. Other major damages include flat glass substrates such as heat-treated plasma display panels with an area of 0.9 m 2 or more. In the present invention, in order to prevent the glass substrate from coming into close contact, the surface has a concave-convex shape, and the arithmetic average roughness Ra of the surface is 0 · Ol-2 0 0 / zm, preferably 0 · 1-2 0 μm, and more preferably oi-io " m, and the ratio (Sm / Ra) of the average interval Sm of unevenness to the arithmetic average roughness Ra is 50 or less. By controlling the unevenness of the surface of the jig, by forming a fine gap between the fixture and the glass substrate, a gas can be circulated to prevent a close contact between the two. In addition, due to such a surface state, the glass substrate is moved and slid on a jig when the glass substrate is placed on a jig, and the position is shifted, so that positioning is easy.
第9頁 574172 _案號91104358 生 η π 修正_ 五、發明說明(6) 此外,在夾具表面异術平均粗糙度r a小於〇 . 〇 1 # m時, 與凹凸的平均間隔Sm與异術平均粗糙度Ra的比(gm/Ra)無 關,由於玻璃基板與夾具的接觸部分緊密接觸,玻璃基板 的一部分與夾具緊固,因此,卸出玻璃基板時,壓著部分 殘留在夾具上,造成微小缺陷。 在夾具表面的算術平均粗糙度Ra大於〇.〇1 ^ m的情況 下,由於凹凸的平均間隔Sm與算術平均粗糙度Ra的比 (Sm/Ra)在50 0以下,可防止玻璃基板與夹具緊密接觸,可防 止發生上述那樣的微小缺陷。而且,夾具表面的算術平均 粗糙度Ra大於〇· m,能夠縮短在夾具上設置玻璃基板時 決定位置所要求的時間,在低溫處理時,可以減小夾具移 動時玻璃基板的位置的偏移。 一方面,夾具表面的算術平均粗糙度Ra大於2 0 0/z m, 熱處理時夾具與玻璃基板的溫度差使兩者發生磨擦,會擦 傷玻璃基板。 另外,凹凸的平均間隔Sm與算術平均粗糙度Ra的比 (Sm/Ra)超過5 0 0,熱處理時,意味著玻璃基板與夾具接觸 增多,但是,在這種情況下,當該接觸部分緊密接觸時, 玻璃基板的一部分緊固在夾具上,卸出玻璃基板時壓著部 分會殘留在夾具上,產生微小缺陷。而且,玻璃基板越大 卸出玻璃基板就越困難,玻璃基板容易產生斷裂、裂紋損 傷。 夾具表面的凹凸,可通過將碳化矽粒子做主要原料燒 成的成形體而得到的燒成體表面用平面研磨盤等研磨後,Page 9 574172 _Case No. 91104358 Health η π Correction _ V. Explanation of the invention (6) In addition, when the average roughness ra of the surface of the fixture is less than 〇1 〇1, the average distance from the unevenness Sm and the average The ratio of the roughness Ra (gm / Ra) is irrelevant. Since the glass substrate is in close contact with the contact portion of the jig, and a part of the glass substrate is fastened to the jig, the pressing portion remains on the jig when the glass substrate is unloaded, causing a slight defect. In the case where the arithmetic average roughness Ra of the surface of the fixture is greater than 0.01 ^ m, since the ratio (Sm / Ra) of the average interval Sm of the unevenness to the arithmetic average roughness Ra is less than 50, the glass substrate and the fixture can be prevented Close contact can prevent such small defects as described above. In addition, the arithmetic average roughness Ra of the surface of the jig is larger than 0 · m, which can shorten the time required to determine the position when the glass substrate is set on the jig, and can reduce the positional deviation of the glass substrate when the jig moves during low-temperature processing. On the one hand, the arithmetic average roughness Ra of the surface of the fixture is greater than 200 / z m. The temperature difference between the fixture and the glass substrate during heat treatment causes friction between the two, which will scratch the glass substrate. In addition, the ratio (Sm / Ra) of the average interval Sm of the unevenness to the arithmetic average roughness Ra exceeds 50 0, and the heat treatment means that the glass substrate and the jig contact more, but in this case, when the contact portion is close When contacting, a part of the glass substrate is fastened to the jig, and the pressed part remains on the jig when the glass substrate is unloaded, causing slight defects. Furthermore, the larger the glass substrate, the more difficult it is to remove the glass substrate, and the glass substrate is prone to breakage and crack damage. The unevenness on the surface of the jig can be obtained by polishing the surface of the sintered body by using silicon carbide particles as the main raw material for the sintered molded body.
第10頁 574172 —·案號91104358_年月日 絛正_ 五、發明說明(7) 通過進行喷砂處理形成,其算術平均粗糙度Ra可通過碳化 石夕屑料的粒度、喷砂投射材料和投射壓力來控制。另外, 凹凸的平均間隔Sm可通過使用的破化石夕原料粒子的粒度和 在集度控制。能夠由成形體的密度控制碳化石夕粒子的密集 在本發明中,夾具的壁厚與面積之比(壁厚/面積) 優選為 2· 0X 1〇-6· i/mm —7· 3X 10_6· i/mm。該值小於 2· 〇χ l/mm時,存在彎曲過大,玻璃基板變形的問題,該 大於7. 3X 10'丨/㈣時,由於重量加重,熱容量也超過 必要量,增加了設備的負荷。 平面顯示板將向5〇英寸、6〇英寸的大型化發展,與此 ,平面顯不板用玻璃基板的熱處理所需的夾具也將大 邊A 如,熱處理用夾具的長邊達到為1 0 0 0mm以上,短 ϊ ΓΓΓ丨上時’夾具的壁厚優選為2—一與上述相 形。有可能彎曲過大,玻璃基板發生變 要量,二超過6mm,重量過重,熱容量也超過必 里增加了没備的負擔。 失具從傳導率的觀點•,本發明的熱處理 含有所定㈣量%。主相由碳切構成的並 粉末成形為所$的^處理用夾ί能夠通過例如將碳化石夕 Μ 、 爽具形狀’將得到的成形 同ίΓΐΐΓ!”體氣氛中或真空,’在含浸金二夕的 石夕與充填在氣:4=:=;=于成形體中的金屬 τ作為的月材的奴化矽粒子結合,使成形Page 10 574172 — · Case No. 91104358_ 年月 日 绦 正 _ V. Description of the invention (7) Formed by sand blasting, the arithmetic average roughness Ra can be determined by the particle size of the carbonized carbide chip and the blasting projection material And projection pressure to control. In addition, the average interval Sm of the unevenness can be controlled by the particle size and concentration of the raw material particles of the broken fossil. The density of the carbide particles can be controlled by the density of the formed body. In the present invention, the ratio of the wall thickness to the area (wall thickness / area) of the jig is preferably 2 · 0X 1〇-6 · i / mm —7 · 3X 10_6 · I / mm. When the value is less than 2.0 × l / mm, there is a problem that the bending is too large and the glass substrate is deformed. When the value is greater than 7.3 × 10 ′ 丨 / ㈣, the heat capacity also exceeds the necessary amount due to the weight increase, which increases the load of the equipment. The flat display panel will be enlarged to 50 inches and 60 inches. At the same time, the fixture required for the heat treatment of the glass substrate for the flat display panel will also have a large side A. For example, the long side of the heat treatment fixture is 10 Above 0 0 mm, the wall thickness of the jig when it is short ΓΓΓΓ 丨 is preferably 2-1. It may be excessively bent, the glass substrate may change its weight, more than 6mm, the weight is too heavy, and the heat capacity is also exceeded, which increases the burden on equipment. From the viewpoint of conductivity, the heat treatment of the present invention contains a predetermined amount of hafnium. The main phase is composed of carbon cut and powder is formed into a powder. The processing clip can be formed by, for example, forming a carbonized stone, and the shape of the mold. 'The obtained shape will be the same as that in a gas atmosphere or a vacuum,' in impregnated gold The stone eve of the second night is combined with the bonded silicon particles of the moon as the metal τ filled in the gas: 4 =: =; =
574172 __911Q4^R_年月日_修正 五、發明說明(8) 體緻密化。 首先’將碳化矽粉末成形為所定的夾具形狀,得到的 成形體預燒製’這種預燒成體在存在金屬矽的減壓的惰性 氣體氣氛或真空中,通過在含浸金屬矽的同時進行燒成使 成形體緻密化’可以製造同樣的熱處理用夾具。在這些製 造方法中’通過控制金屬矽的充填量,可控制燒成後的表 觀氣孔率。 含有金屬矽的熱處理用夾 中生成二氧化石夕層(玻璃層) 理體的玻璃基板的反應,同時 氧化石夕層覆蓋’得到碳化碎粒 對玻璃基板不易損傷。 由於該玻璃層自己生成, 層的特別處理’只要在對玻璃 就可以基本生成,但為了提高 行熱處理、或通過施轴、溶^ 具,通過表層氧化,在表層 ,能夠進一步與作為被熱處 由於碳化矽粒子的表面被二 子的邊緣丸化的效果,因此 即便不進行預先生成的破璃 基板一次熱處理也使用一次 效果,最好在氧化氣氛中進 等在表面生成玻璃層。 較佳實施例之發明詳述 詳細地說明本發明 但 以下,根據本發明的實施例更 是,本發明不受這些實施例的限制 實施例1 平均粒 m的碳粉1 ,平=粒控為10卟蚴碳化石夕粒子5〇質 二為l^n的碳化矽粒子49質量铷平均粒徑肩574172 __911Q4 ^ R_year month day_correction 5. Description of the invention (8) Densification of the body. First, the silicon carbide powder is formed into a predetermined jig shape, and the formed body is pre-fired. This pre-fired body is impregnated with metal silicon while being impregnated with an inert gas atmosphere or vacuum under the presence of metal silicon. The firing densifies the molded body, and the same heat treatment jig can be produced. In these manufacturing methods, by controlling the filling amount of metallic silicon, the apparent porosity after firing can be controlled. The silicon dioxide layer (glass layer) is formed in the heat treatment clip containing metallic silicon, and the glass substrate is covered with the oxide layer to obtain carbonized particles. The glass substrate is not easily damaged. Because the glass layer is generated by itself, the special treatment of the layer can be basically formed as long as the glass is processed, but in order to improve the heat treatment, or through the application of shafts, solvents, and surface oxidation, the surface layer can be further treated as a heated surface. Because the surface of the silicon carbide particles is pelletized by the edges of the two sons, the primary effect is used even if the pre-generated glass-breaking substrate is not subjected to a single heat treatment. It is best to wait in an oxidizing atmosphere to generate a glass layer on the surface. The detailed description of the preferred embodiment of the present invention illustrates the present invention in detail, but in the following, according to the embodiments of the present invention, the present invention is not limited by these embodiments. Example 1 The average particle size of the carbon powder 1 is equal to the particle size. 10 porphyrin carbide particles 50 mass silicon carbide particles with l ^ n 49 mass 铷 average particle diameter shoulder
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--9πη^« 五、發明說明(9) 貝量%的混合粉末中、添加聚叛酸類分散劑、丙烯酸類乳 膠和離子交換水製成板狀成形體,在4 0°C溫度的乾燥機中 乾燥一夜後’將氣孔裝填足夠量的碳化矽粉末載置在成妒 體上,在減壓的氬氣氣氛下於180 0°C煆燒1小時。將得到v 的燒成體的表面用平面研磨盤研磨後,使用按表1所示的 投射料進行喷砂處理,得到如表所示的具有表面粗糙度\ 和凹凸的平均間隔3111的實施例1的熱處理用夾具。 X a 實施例2、3 、在平均粒佐為1 〇 〇# JJJ的碳化石夕粒子5 〇質量%和平 徑為1" m的碳化矽粒子50質量%的混合粉末中、添加二= 酸類分散齊卜丙烯酸類乳膠和離子交換水製成板狀4^ 體,在40°C溫度的乾燥機中乾燥一夜後,& ^ 20_煆㈣、時。將得到的燒成“表面用平^於 研磨後,分別使用表1所示的投射材料進行噴砂 ,二 到如表所不的具有表面粗糙度{{味凹 件 施例2和3的熱處理用夾具。 的十均間h Sm的實 實施例4、5 按與實施例2或3相同的步驟得到的燒成體, 孔率達所定值,載置計算量的金屬矽, 乳 中,於150(TC溫度下加熱1小時將金屬石夕含浸在、氣鼠孔\乳氛 得到如表i所示控制了表觀氣孔率的燒成體a將得 成體的表面用平面研磨盤研磨後’使用表、所示的投射--9πη ^ «V. Description of the invention (9) A plate-shaped molded body made of polyacrylic acid-based dispersant, acrylic latex, and ion-exchanged water is added to the mixed powder in the amount of%, and the dryer is at a temperature of 40 ° C After overnight drying, the pores were filled with a sufficient amount of silicon carbide powder and placed on a jealous body, and sintered at 180 0 ° C for 1 hour under a reduced pressure argon atmosphere. The surface of the fired body obtained by v was polished with a flat grinding disc, and then subjected to sandblasting using a shot as shown in Table 1, to obtain an example having a surface roughness \ and an average interval of unevenness 3111 as shown in the table. 1 heat treatment jig. X a Example 2, 3, 50% by mass of silicon carbide particles with an average particle size of 100 # JJJ, and 50% by mass of silicon carbide particles with a diameter of 1 " m, mixed with powder = acid dispersion The zibu acrylic latex and ion-exchanged water were made into a plate-shaped 4 ^ body, and dried overnight in a dryer at a temperature of 40 ° C, & ^ 20_ 煆 ㈣, hours. The obtained firing surface was ground and ground, and then the projective materials shown in Table 1 were used for sandblasting, and the surface roughness as shown in Table 2 was used for the heat treatment of the taste concavities 2 and 3. Example 4 and 5 of the ten-millimeter interval h Sm of the jig. The calcined body obtained in the same procedure as in Example 2 or 3, the porosity reached a predetermined value, and a calculated amount of silicon metal was placed. (Heating at TC temperature for 1 hour, immersing the metal stone in the air hole, milk hole and milk atmosphere to obtain the fired body a whose apparent porosity is controlled as shown in Table i. The surface of the obtained body is polished with a flat grinding disk. Use table, projection shown
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凹 實施例6 - 9 一、 f平均粒偟為1 0 m的碳化矽粒子5 0質量%、平均粒 徑為1 // H1的奴化石夕新/1 Qj^T旦0/4: τ 質量%的混合粉末夕中粒子二9貝平均粒徑為M m的礙粉] ^ ^ ^末中、添加聚羧酸類分散劑、丙烯酸類乳 二、 fl 一 > =、水製成板狀成形體,在4 〇°c溫度的乾燥機中 2 ^ ΐ !>,加卫成所定的尺寸,將充填氣孔的足夠量碳 J° η ,序減少地載置在成形體上,在減壓的氬氣氣 =了於1 80 0C煆燒1小時,分別得到如表丨所示的控制了表 〜氣孔率的燒成體。將得到的燒成體的表面用平面研磨盤 研磨後=分別用表1所示的投射材料進行喷砂處理,得到 表所示的具有表面粗糙度Ra和凹凸的平均間隔&的實施 例6-9的熱處理用夾具。 實施例1 〇 3 按與實施例1相同的步驟得到成形體,在4 0°c溫度乾 2機中乾燥1夜後,加工成所定的尺寸,將充填氣孔足夠 。里的石夕粉末載置在成形體上,在減壓的氬氣氣氛下於1 8 0 0 ^假燒1小時。在得到的燒成體表面上以與該燒成體的熱 /騰率相同的釉藥施釉,在120 0°C溫度下進行熱處理。將 熱處理後的表面用2-4" m的碳化矽粒子輕輕研磨,得到如 表1所示的具有表面粗糙度Ra和凹凸的平均間隔Sm的實施Concave Examples 6-9 First, silicon carbide particles with an average particle size of 10 m 50% by mass and an average particle size of 1 // H1's fossils Xixin / 1 Qj ^ T Dan 0/4: τ mass % Of the mixed powder, the average particle size of the particles is 9 m, and the average particle size is M m.] ^ ^ ^ At the end, adding polycarboxylic acid-based dispersant, acrylic milk II, fl a > =, made of water into a plate shape Body, in a dryer at a temperature of 40 ° C, 2 ^ &! ≫, Kawai becomes a predetermined size, and a sufficient amount of carbon J ° η to fill the pores is sequentially placed on the formed body, and the pressure is reduced. The argon gas was sintered at 180 ° C for 1 hour, and the calcined bodies with controlled porosity as shown in Table 丨 were obtained. After the surface of the obtained fired body was polished with a flat grinding disc = sandblasted with the projection materials shown in Table 1, respectively, Example 6 having a surface roughness Ra and an average interval of unevenness as shown in the table was obtained. -9 heat treatment fixture. Example 1 03. A molded body was obtained in the same procedure as in Example 1. After drying at 40 ° C for 2 nights, it was processed into a predetermined size, and the filling pores were sufficient. The Shi Xi powder was placed on the formed body, and it was sintered for 1 hour at 180 ° C. under a reduced-pressure argon atmosphere. The surface of the obtained fired body was glazed with a glaze having the same heat / swelling rate as the fired body, and heat-treated at a temperature of 120 ° C. The heat-treated surface was lightly polished with 2-4 " m silicon carbide particles to obtain an implementation having a surface roughness Ra and an average interval Sm of unevenness as shown in Table 1.
574172 _案號91104358_年月曰 修正_ 五、發明說明(11) 例1 0的熱處理用夾具。 實施例1 1 按與實施例4相同的步驟得到燒成體,加工成所定的 尺寸,在表面上溶射塗覆莫來石成分,將得到如表1所示 的具有表面粗糙度Ra和凹凸的平均間隔Sm的實施例1 1的熱 處理夾具。 實施例1 2 按與實施例1相同的步驟得到燒成體,加工成所定尺 寸,表面用平面研磨盤研磨,將得到如表1所示的具有表 面粗糙度Ra和凹凸的平均間隔Sm的實施例1 2的熱處理夾 具。 比較例1 按與實施例3相同的步驟,得到板厚更薄的燒成體, 將得到的燒成體的表面用平面研磨盤研磨後,使用表1所 示的投射材料進行喷砂處理,得到如表1所示的具有表面 粗糙度Ra和凹凸的平均間隔Sm的比較例1的熱處理夾具。 比較例2 按與實施例4相同的步驟,得到板厚更薄的燒成體, 將得到的燒成體的表面用平面研磨盤研磨後,使用表1所 示的投射材料進行喷砂處理,得到如表1所示的具有表面574172 _Case No. 91104358_ Year Month Revision _ 5. Description of the invention (11) Example 10 Fixture for heat treatment. Example 1 1 A sintered body was obtained by the same procedure as in Example 4, processed to a predetermined size, and a mullite component was spray-coated on the surface. The surface roughness Ra and unevenness shown in Table 1 were obtained. The heat treatment jig of Example 11 of the average interval Sm. Example 1 2 A sintered body was obtained by the same procedure as in Example 1, and processed to a predetermined size. The surface was polished with a flat grinding disk to obtain the implementation of the average interval Sm with surface roughness Ra and unevenness as shown in Table 1. Example 12 Heat treatment jig. Comparative Example 1 According to the same procedure as in Example 3, a fired body having a thinner plate thickness was obtained, and the surface of the fired body obtained was polished with a flat grinding disc, and then subjected to sandblasting using a projection material shown in Table 1, The heat treatment jig of Comparative Example 1 having the surface roughness Ra and the average interval Sm of unevenness as shown in Table 1 was obtained. Comparative Example 2 The same procedure as in Example 4 was used to obtain a fired body having a thinner plate thickness. The surface of the fired body obtained was polished with a flat grinding disk, and then subjected to sandblasting using a projection material shown in Table 1. Obtain the surface as shown in Table 1.
第15頁 574172 __案號 91104358__年月 J-_____ 五、發明說明(12) 粗縫度Ra和凹凸的平均間隔^的比較例2的熱處理夾具。 比較例3 將按與實施例1相同步驟得到的燒成體表面用平面研 磨盤研磨後,進行毛襯布研磨,得到如表1所示的具有表 面粗糙度Ra和凹凸的平均間隔Sm的比較例3的熱處理失 具。 比較例4 在按與實施例1 1相同的步驟得到的燒成體表面上,用 具有在實施例11中使用的溶射原料1 · 5-5倍粒徑的溶射原 料溶射莫來石(卜 )成分,得到如表1所示的具有 表面粗綠度Ra^凹凸的平均間隔Sm的比較例4的熱處理 用夾具。 熱處理夾具的特性 對前述實施例1 - 1 2和比較例1 -4的各熱處理夾具的特 性和這些熱處理夾具用於玻璃基板的熱處理時對玻璃基板 的影響和夹具的變形進行評價,其結果示於表1。另外, 作為比較例5 ’對利用以前的結晶化玻璃質材料構成的熱 處S爽具的特性等也同樣地測定和評價,其結果也示於表Page 15 574172 __Case No. 91104358__ Month J -_____ V. Description of the invention (12) The heat treatment jig of Comparative Example 2 of the slackness Ra and the average interval of unevenness ^. Comparative Example 3 The surface of the sintered body obtained in the same procedure as in Example 1 was polished with a flat polishing disc, and then ground interlining was polished to obtain a comparative example having a surface roughness Ra and an average interval Sm of unevenness as shown in Table 1. 3 heat treatment missing. Comparative Example 4 On the surface of the sintered body obtained by the same procedure as in Example 11, mullite was dissolved by using a spraying raw material having a particle diameter of 1.5-5 times that of the solvent-spraying raw material used in Example 11 (b). Components, as shown in Table 1, a heat treatment jig of Comparative Example 4 having an average interval Sm of surface rough greenness Ra ^ unevenness was obtained. Characteristics of heat treatment jigs The characteristics of each of the heat treatment jigs of the foregoing Examples 1 to 12 and Comparative Examples 1 to 4 and the influence of these heat treatment jigs on the heat treatment of the glass substrate and the deformation of the jig were evaluated. The results are shown.于 表 1。 In Table 1. In addition, as Comparative Example 5 ', the characteristics and the like of a heat treatment S cooler made of a conventional crystallized glassy material were also measured and evaluated in the same manner. The results are also shown in the table.
第16頁 574172 案號 91104358 曰 修正 五、發明說明(13)Page 16 574172 Case No. 91104358 Amendment V. Description of Invention (13)
SK ±1 〇 κ- er s$ O SK κ- 七! 〇 玲 9K K- 七1 «Γ 〇 妥 9Λ K- -y «Γ ο *y ο 妥 m, κ- i i6 ο κ- -y ο 安 SK :+ XJ o 5 罐 〇 3Κ * •id 〇 安 9Κ Κ- -y 〇 Κ- -Η 罐 ο » :+ Η 喊 Ο SM .3 罈 〇 3 s$ 〇 3 if次 <n S Si 眾 K 5 眾 tn m m K δ Μ ιΛ κ 2 in ST 5 1/1 m m «η SC s 瓦 m ΙΛ 芝 2 苯 m m 2 5 \Λ i •St in = 3 芄 m 1/) 5 孟 m 5 μ 3 ; μ 5 •33 JTI坡瑀Μ扳 的影窖 1- 不设彤 不變肜 不變形 不资肜 1 不轮肜 不轮肜 不设形 不變肜 不设彤 不變形 不设肜 不炎彤 埤曲垅彤 埤曲史形 S«/Ka S 100 3 3 1 «η CN* t〇 1 rn 500 r- 00 c^* - 04 1 00 1 凹凸的Y均 間M S» (μ *> ! 430 200 8 Ο 5Μ ο % 510 s i- 350 1_ _ U3 IJOO Ο S HS0 § iU5U 1 农面m 择度Ra (μ ·> 00 CM «η - ο CO a〇 o in o.oi § ϋ. 23 S Ο 0. 15 2 .1 议《_ 1 ΛΙ,α,Μ24 A“0,MI00 ΑΙΑΜ50 ΛΙΑΝ80 矽砂5铖 Ai,〇j»a ΛΙΑΜ24 矽眇丨〇铋 1 AIARI0 1__ 坡讷施柚 典米石mi|j 1 sicNIO sicttIO 1 典米石mill I Μ傅礴毕 (W/ek) S Ο ο S S ο S S ο 2 S Ο S ο - 蚜曲霣 (mm) Ο U9 〇· σ» d cn Ο ο 〇 o' 5Μ Ο d 〇 ο ο CM Ο 0. 3 d 〇 / Wtt爭 (Cpo) 300 1 ο Ο C4 s «Μ 300 1_ 1 250 300 300 ο CM 300 〇 220 300 ο CM [ 表奴氧 孔爭 (X) d o ο U3 ^r 〇 \Λ d Τ% d - U9 Ο o ιη 〇 \η 〇 室溫強 Ιίί UV») s s Ο 2 % s S o 〇 ο Ο ο S Ο 8 金崩矽 址 (MOLD o o ο Ο 30 o o 〇 ο ο o ο 〇 Ο 1 资 1 «a \r> CM c— vn m r> C4 \Λ \Λ in ΧΛ \n νΛ κη 7Γ 9 1 a S ra 1 3 | | X 1 χ I 3 r> ο rn 5 Π 1 1 | ο CM 1 =< J X s •o X s X 1 X s :〇 X 1 X 8 #£ s 04 1 X 1 X 5 r> X Ο r> X ο rj X 1 I 墨 8 •Ο 墨 1材》 u •Λ sic CJ (A u O v» u ui u VI ο νι u tfl ςι VI u VI ς> •Α sic U UI U V» •Λ CM η m ς〇 卜 00 σι Ο 二 CM CSJ cn cn 荃 基 m m m m 壎 m * m m ί -¾ i xj ±f AJ oi- Η0ms 第17頁 574172SK ± 1 〇 κ- er s $ O SK κ- Seven! 〇 玲 9K K- 七 1 «Γ 〇9 9 K- -y« Γ ο * y ο Tom, κ- i i6 ο κ- -y ο SK: + XJ o 5 cans 〇3Κ * • id 〇 安9Κ Κ- -y 〇Κ- -Η can ο »: + Η shout 〇 SM .3 altar 〇3 s $ 〇3 if times < n S Si KK 5 ttn mm K δ Μ ιΛ κ 2 in ST 5 1/1 mm «η SC s watt m ΙΛ 芝 2 benzene mm 2 5 \ Λ i • St in = 3 芄 m 1 /) 5 m 5 5 μ 3; μ 5 • 33 -No change, no change, no change, no change, no change, no change, no change, no change, no change, no change, no change, no change, no change, no change. S «/ Ka S 100 3 3 1 «η CN * t〇1 rn 500 r- 00 c ^ *-04 1 00 1 Uneven Y-Mass MS» (μ * >! 430 200 8 Ο 5Μ ο% 510 s i- 350 1_ _ U3 IJOO Ο S HS0 § iU5U 1 Agricultural surface m Selectivity Ra (μ · > 00 CM «η-ο CO a〇o in o.oi § ϋ. 23 S Ο 0. 15 2 .1 Discussion" _ 1 ΛΙ , α, Μ24 A "0, MI00 ΑΙΑΜ50 ΛΙΑΝ80 Silica sand 5 铖 Ai, 〇j» a ΛΙΑΜ24 Silica 丨 〇Bis 1 AIARI0 1__ Poune Shiyoudian rice stone mi | j 1 sicNIO sicttIO 1 Rice rice mill I Μ Fu Yan (W / ek) S Ο ο SS ο SS ο 2 S Ο S ο-Aphid Quercus (mm) 〇 U9 〇 · σ »d cn 〇 ο 〇o '5M Ο d 〇 ο CM 〇 0 3 d 〇 / Wtt contention (Cpo) 300 1 ο Ο C4 s «Μ 300 1_ 1 250 300 300 ο CM 300 〇220 300 ο CM [Table slave oxygen contention (X) do ο U3 ^ r 〇 \ Λ d %% d- U9 Ο o ιη 〇 \ η 〇 room temperature strong Ιίί UV ») ss Ο 2% s S o 〇ο Ο ο S Ο 8 gold collapse silicon site (MOLD oo ο 〇 30 oo 〇ο ο o ο 〇〇 1 capital 1 «A \ r > CM c— vn m r > C4 \ Λ \ Λ in χΛ \ n νΛ κη 7Γ 9 1 a S ra 1 3 | | X 1 χ I 3 r > ο rn 5 Π 1 1 | ο CM 1 = < JX s • o X s X 1 X s: 〇X 1 X 8 # £ s 04 1 X 1 X 5 r > X Ο r > X ο rj X 1 I ink 8 • 〇 ink 1 material》 u • Λ sic CJ (A u O v »u ui u VI ο νι u tfl ςι VI u VI ς > • Αsic U UI UV» • Λ CM η m ς00 σι 〇 2 CM CSJ cn cn Tsuenki mmmm 壎m * mm ί -¾ i xj ± f AJ oi- Η0ms page 17 574172
如 處理物 平均粗 產生玻 Ra的比 板緊密 的比較 板產生 如 構成, 的夹具 引起的 率地進 顆粒成 定地使 隔,在 從夾具 表1所示,實施例1-12的熱處理用夾具,對作 件的玻璃基板的沒有任何影響,但是,在面管' 糙度Ra超過200的比較例卜2和4的熱處理用失;中 璃基板擦傷,凹凸的平均間隔Sm與算術平均粗^产 (Sm/Ra)超過的比較例3的熱處理夾具盘玻璃 接觸,卸出困難。另外,由結晶化玻璃質材玻璃基 例5的熱處理夾具,由於剛性低而彎曲大, 彎曲,失具自體也過早發生變形。 喁秦 上所述,本發明的熱處理失具,由於主相由 與傳統的玻璃基板熱處理中所使用的結晶化玻 相比剛性更高,熱傳導率優良,可以抑制所 玻璃基板的變形,同時可在比較短的時間内,古$ 行玻璃基板的均勻熱處理。另外,由於不會有 長的結晶相,夾具自體隨時間的變形小,可長期穩 用。而且,通過適當地控制表面粗糙度和凹^間心 夾具中不存在空穴,在夾具上的玻璃基板的定二及 卸出玻璃基板都可容易地進行。For example, if the processed material is coarse on average, the glass produced Ra is tighter than the plate. If the comparison plate is produced as shown in the figure, the fixture will cause the particles to enter the granularity to form a fixed spacer. It does not have any effect on the glass substrate of the workpiece. However, in Comparative Examples 2 and 4 of the surface tube's roughness Ra exceeding 200, the heat treatment was lost; the middle glass substrate was scratched, and the average interval Sm of the unevenness and the arithmetic average thickness were ^ The heat treatment jig disk of Comparative Example 3 whose production (Sm / Ra) exceeds exceeded, it was difficult to remove. In addition, the heat treatment jig made of the crystallized vitreous material glass Example 5 has a large bending due to its low rigidity, and is bent and deformed prematurely. According to Qin Qin, because the heat treatment of the present invention is lost, the main phase is more rigid and has better thermal conductivity than the crystallized glass used in the conventional glass substrate heat treatment, which can suppress the deformation of the glass substrate and can also In a relatively short period of time, the glass substrates were uniformly heat treated. In addition, since there is no long crystal phase, the deformation of the fixture itself with time is small, and it can be used stably for a long time. Furthermore, by appropriately controlling the surface roughness and the absence of cavities in the jig, the fixation of the glass substrate on the jig and the removal of the glass substrate can be easily performed.
574172 案號 91104358 年月曰 修正 圖式簡單說明 第19頁574172 Case No. 91104358 Date of Amendment
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JP2001082030A JP4049545B2 (en) | 2001-03-22 | 2001-03-22 | SiC heat treatment jig |
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KR (1) | KR100465389B1 (en) |
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CN103180923A (en) * | 2010-11-09 | 2013-06-26 | 信越聚合物股份有限公司 | Retaining jig, handling jig, set of retaining jigs, and adhered material retaining device |
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WO2008018401A1 (en) * | 2006-08-09 | 2008-02-14 | Mitsui Mining & Smelting Co., Ltd. | SiC-BASED SINTERED PRODUCT, AND METHOD FOR PRODUCTION THEREOF |
EP2138474B1 (en) * | 2008-06-23 | 2018-08-08 | Imerys Kiln Furniture Hungary Ltd. | Sic material |
JP5722897B2 (en) * | 2010-07-26 | 2015-05-27 | 日本碍子株式会社 | Rack for baking |
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JP3378608B2 (en) * | 1993-05-31 | 2003-02-17 | イビデン株式会社 | Method for producing silicon carbide substrate for jig for semiconductor production |
JPH09275078A (en) * | 1996-04-05 | 1997-10-21 | Sumitomo Metal Ind Ltd | Silicon wafer retaining jig |
JPH10321543A (en) * | 1997-05-20 | 1998-12-04 | Sumitomo Metal Ind Ltd | Wafer support and vertical boat |
JP2000315720A (en) * | 1999-04-28 | 2000-11-14 | Ibiden Co Ltd | Semiconductor manufacturing jig made of ceramics |
JP2000327459A (en) * | 1999-05-26 | 2000-11-28 | Asahi Glass Co Ltd | Silicon carbide jig for low pressure cvd and its production |
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CN103180923A (en) * | 2010-11-09 | 2013-06-26 | 信越聚合物股份有限公司 | Retaining jig, handling jig, set of retaining jigs, and adhered material retaining device |
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CN1189425C (en) | 2005-02-16 |
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DE10212607A1 (en) | 2002-10-31 |
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