TW573338B - Method for improving fence defect of dual damascene structure - Google Patents

Abstract

A method for improving a fence defect of a dual damascene structure is disclosed. The method is suitable for use in a via-first process for manufacturing a dual damascene structure. The present invention utilizes a dry-etching equipment having dual RF powers to perform a trench etching, wherein a bias power is used to generate ion bombardment for removing the fence defect, thereby promoting the reliability of trench etching and obtaining an excellent trench profile.

Description

573338 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (5) Printed and Invention Description Field of the invention: The present invention relates to a method for improving a fence-like protrusion defect (Dence Defect) of a dual metal inlay (Dual Damaseene) structure. In particular, it relates to a method of using a dry-type money engraving machine with dual RF powers to improve the barrier-like protrusion defects of a dual metal damascene structure. BACKGROUND OF THE INVENTION: In the past decades, most of the wire materials inside the chip have Metallic inscriptions are used. However, with the reduction of the line width, especially the speed of element components below 0.25 micron generation, the speed of operation is obviously affected by the increase of the resistance value and the dielectric value (Resistance Capacitance; RC) delay. Declining. At present, in the face of denser circuit design, it is necessary to choose a metal material with lower resistance, such as copper, to replace the inscription. In addition, a multilayer metal connection is constructed with a dielectric material with a low dielectric constant to improve The phenomenon of RC delay "Because steel cannot use traditional Dry Etching technology to conduct wires It is planted, so most of the current production of metal wires uses the inlay method to 'fill copper metal into the dielectric layer where the metal wire pattern has been formed. The dual metal inlay technology is to simultaneously produce the dielectric layer® when making the trench of the metal wire. Therefore, only one metal filling step is required to complete the metal wires and the connecting wires between the metal wires together to achieve the purpose of simplifying the process steps. Depending on the dry etching method, the dual metal inlay technology can be distinguished into the first name carved trenches (Trench First) type, interleaved window type, and self-aligned type, etc. Among them, the paper size of the interlayer window is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 cm) ) (Please read the notes on the back before writing this page) -Order ·

573338 A7 B7 V. Description of the Invention () (Please read the precautions on the back before filling this page) The Photolithography process is far more difficult than the photolithography process of trenches, and the way of etching the interlayer window first, its interlayer The lithography of the window is performed on a flat surface. Therefore, it is easier to etch the via window first, and it has a larger process window. Please refer to FIG. 1A to FIG. 1E, which are cross-sectional views showing the manufacturing process of the opening of the conventional double metal insert structure. When making the opening of the dual metal damascene structure, the semiconductor substrate 100 is first covered with an etching stop layer (Etching Stop Layer) 102 which is etched by an interlayer window formed by a silicon carbide (SiC) layer, and then the etching stop layer is formed. An oxide layer 104 formed of TEOS is formed on the substrate 102, and then a dielectric layer 106 is formed on the oxide layer 104. The material of the dielectric layer 106 may be, for example, a low dielectric constant material. Then, a dielectric coating layer 10 is covered on the dielectric layer 106. After the dielectric coating layer 08 is formed, a dielectric window 11 is formed on the dielectric coating layer 108, and a part of the dielectric window HQ is formed. Filled with a filling layer 1 12 to protect the etch stop layer 102 to form a structure as shown in FIG. 1A. The material of the filling layer 112 may be, for example, a photoresist material. The filling layer 112 is used to protect the etch stop layer 102, so that the etch stop layer 102 will not be penetrated by the etching in the subsequent trench (see Fig. 1b) etching, thereby preventing the substrate 100 from being damaged. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a photoresist layer 114 with a trench pattern 120 is covered on the dielectric coating layer 108, and a part of the dielectric coating layer 08 and the dielectric layer window 10 are exposed. The structure shown in Figure 1B. Among them, some of the photoresist layer 1 14 will flow into the interlayer window 110 along the side wall of the interlayer window 110 to form a photoresist scum (Scum) 1 14a 〇3 This paper standard applies to China National Standard (CNS) A4 specifications (210X297 Gongchu) 573338 A7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ------ ^ --___, Invention Description () Then, the photoresist layer m is used as a hard cover, and the electricity is used to expose it The dielectric coating layer has just been subjected to the first-dry-type process to remove the divided dielectric coating layer 108 to form the structure shown in FIG. 1C. Next, a second dry etching process is performed, and trenches 122 are formed in the dielectric layer U6 and the dielectric layer 11Q by controlling the timing of the second dry etching process, as shown in FIG. 1D. Because the photoresist slag U4a covers part of the sidewall of the interlayer window, the second dry etching process cannot etch the part of the side wall of the interlayer window 11o covered by photoresist 114a, plus photoresist ii4a. Will react with the dielectric layer 106 to produce the compound 116. Therefore, after the second dry etching process is performed, a protrusion 132 is formed as shown in FIG. One side of the protrusion 132 is a photoresist residue] [14a, which is a compound 1 16 produced by the reaction between the dielectric layer 106 and the dielectric layer 106, and the other side is a dielectric layer 106. After the ashing step is performed, the photoresist residue 114a, the photoresist layer n4, the filling layer 112, and the compound 116 are removed, and a structure as shown in FIG. 1 is formed. After removing compound 116, the protrusions 丨 32 form fence-like protrusions ii! IFenCe DefeCtm ’fence-like protrusion defects 1 3 3 will be followed by Barrier Layer and Electrochemical Plating

(Plating; ECP) deposition has poor step coverage (Step covalage;). In addition, during the operation of the device, the barrier-like protrusion defects in in the trench 122 will further cause the electrical instability of the device and reduce the reliability of the device. Therefore, it is very urgent to develop a method for improving the barrier-like protrusion defects of the double metal mosaic structure, so as to effectively eliminate and improve the trench. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read first (Notes on the back then fill out this page) 573338 A7 B7

Fifth, the description of the invention of the grid-like protrusion defects () to make a good quality double metal mosaic fiber structure, so that the subsequent barrier layer and electrochemical plating deposition can have a good step (Please read the precautions on the back first Fill out this page again} Cover. It can also avoid the instability of the electrical components and improve the reliability of the components. Purpose and summary of the invention: When manufacturing the opening of the double metal mosaic structure in the above-mentioned conventional practice, a thumb will be formed in the trench. The protuberances are shaped like defects, which makes the step coverage of subsequent processes worse. It also reduces the electrical stability of the components, which seriously affects the reliability of the components. The object of the present invention is to provide a barrier-like protuberance defects with a double metal mosaic structure. The improvement method can effectively eliminate and improve the thumb-like protrusion defects in the trench to obtain an excellent trench appearance, so that the subsequent step, the barrier layer and the electrochemical plating deposition can have a good step coverage. It can also avoid causing Component electrical instability increases the reliability of the component. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs based on the above For the purpose, the present invention further provides a method for manufacturing an opening of a dual-metal embedded structure, which uses a dry etching machine with dual RF power sources. The improvement method of the present invention includes at least: providing a substrate, wherein An etch stop layer, an oxide layer, a dielectric layer, and a dielectric coating layer are stacked, and a dielectric window is formed in the etch stop layer, the oxide layer, the dielectric layer, and the dielectric coating layer, and about a portion is exposed. In the etching stop layer, a part of the interlayer window is filled with a filling layer, and the filling layer is covered on the exposed stop layer of the exposed portion; a photoresist layer is formed on the dielectric cover, and a trench is formed in the photoresist layer Pattern, part of the photoresist layer along the sidewall of the via window 5

573338 A7 ____ B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () flows into the interlayer window to form a photoresist residue; the photoresist layer is used as a hard cover to perform the first dry etching process. Part of the dielectric coating is removed; the photoresist layer is used as a hard cover to perform the first dry-etching process to form a trench in the dielectric layer, where the photoresist dross forms a protrusion with a portion of the dielectric layer. A bias power source is used to perform an Ion Bombardment step to remove this protrusion; and an ashing step is performed to remove the photoresist layer and the filling layer and expose a part of the etch stop layer. Detailed description of the invention: The present invention discloses a method for improving the barrier-like protrusion defects of a double metal mosaic structure, which is suitable for the process of etching the double metal embedded structure of the Via First first. The present invention uses a dry etching machine with dual radio frequency power sources to perform trench etching, and uses ion bombardment generated by a bias power source to remove fence-like protrusion defects, thereby increasing the reliability of trench etching, thereby obtaining an excellent trench appearance. . In order to make the description of the present invention more detailed and complete, reference may be made to the following description and the illustrations of FIGS. 2A to 2F. Please refer to FIG. 2A to FIG. 2F, and FIGS. 2A to 2F are cross-sections 制造 illustrating the manufacturing process of the opening of the double metal embedded structure of the present invention. When the method of the present invention is used to manufacture the opening of the dual metal damascene structure, an etch stop layer 202 is first covered on the semiconductor substrate 200 to accurately control the etching end point of the via window. The material of the etch stop layer 202 may be, for example, carbonization. Silicon, which can be 500 angstroms thick. The etch stop layer 202 may be covered with an oxide layer 204 formed of, for example, TEOS, and the thickness may be 300 angstroms 0 (please read the precautions on the back before filling this page) 丨 binding ·% · This paper size Applicable to China National Standard (CNS) A4 specification (210X297 mm) 573338 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling this page) Then use the method such as chemical vapor deposition on the oxide layer 204 The overlying dielectric layer 206 ′ may be a low-dielectric constant material such as a Black Diamond material, and may have a thickness of 7800 angstroms. After the dielectric layer 206 is formed, the dielectric layer 206 is covered with a dielectric coating layer 208, for example, composed of silicon oxynitride (SiON), and the thickness thereof may be 120 angstroms. Then, using the remaining stop layer 202 as the end point of the etching, the dielectric coating 208 and the underlying dielectric layer 206 are etched to form a dielectric window 210. A part of the interlayer window 210 is filled with a filling layer 212. The material of the filling layer 212 may be, for example, a photoresist material, and a structure as shown in FIG. 2A is formed. After printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, a photoresist layer 2 j 4 is formed using a method such as chemical vapor deposition to cover the dielectric coating 208, and a trench pattern 22 is formed thereon, and the exposed part is formed. The dielectric coating 208 and the dielectric window 210 form a structure as shown in FIG. 2B. Among them, as mentioned above, a part of the photoresist layer 2 丨 4 flows into the interlayer window 2 10 along the sidewall of the interlayer window 2 10 to form a photoresist layer 214a. Then, the photoresist layer 214 is used as a hard mask, and a first dry etching process is performed on the exposed dielectric coating 208 by using a plasma to remove a portion thereof; the electrical coating 208 'is formed as shown in FIG. 2C. The structure. The process conditions of the first dry etching process are: controlling the process pressure at 80 millitorr (mTorr; mT); the power of the main power supply is 800 watts (w), and the power of the bias power supply is 0 watts; the reaction used Gases include: carbon tetrafluoride (cf4), oxygen (〇2), and argon (Ar). The flow rate of carbon tetrafluoride is 80 standard cubic centimeters per minute (SCCM). The flow rate of oxygen is 2SCCM. The flow rate is 160 SC CM; the duration of the first dry etching process is 35 seconds. 7 This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 Gongchu) 573338 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Then, the photoresist layer 214 is used as a hard cover, and A second dry etching process is performed on the exposed w electric layer 206 by using a plasma to remove a part of the dielectric layer 206, and a trench 222 is formed in the dielectric | 206 and the dielectric layer 胄 21 ′ as in 2D. As shown. The process conditions of the second dry-type osmium process are: the control process pressure is 80 mTorr; the power of the main power supply is 800 watts, and the power of the bias power supply is 0 watts; the reaction gas used includes carbon tetrafluoride, atmosphere (NO and argon, of which the flow rate of carbon tetrafluoride is 80 sccM, the flow rate of nitrogen is 100 SCCM, and the flow rate of argon gas is 160 SCCM: the duration of the second dry etching process is 27 seconds. It is stated that the second dry etching process cannot etch to the side wall of part of the dielectric window 2 covered by the photoresist slag 2 1 4a, and the photoresist slag 2 1 & will react with the dielectric layer 206 to generate a compound 216, forming protrusions 232 that are not shown in Figure 2D. After removing compound 216, protrusions 232 will form barrier-like protrusion defects, so protrusions 232 must be removed in time, otherwise it will affect subsequent processes and greatly reduce The reliability of the element. Therefore, the main feature of the present invention is the ion bombardment step generated by the bias power of the dry etching machine using the dual RF power source to remove the protrusions 232 to avoid the generation of fence-like protrusion defects. The dry etching machine with dual RF power sources used in the present invention may be, for example, a Tiger reaction chamber produced by Tokyo Electronics Co., Ltd. (TEL) of Japan. After performing ion bombardment step 300, the protrusions 232 are removed, and formed as The structure shown in Figure 2E. The process conditions for ion bombardment step 300 are: the control process pressure is 30 mTorr; the power of the main power source is 500 watts, and the power of the bias power source is 200 watts to the paper. The scale is applicable to the Chinese national standard (〇 ^ 5) 8 4 specifications (210x297 mm) (Please read the precautions on the back before filling in this page): installed ·-ordered ·% 573338 A7

V. Description of the invention () Between 300 watts; the reaction gases used include nitrogen and oxygen, wherein the flow of nitrogen is 200 SCCM and the flow of oxygen is 3 SCCM: the time of ion bombardment step 300 is 15 seconds. Then, an ashing step is performed to remove the photoresist dross 214a, the photoresist layer 214, and the filling layer 212 to form a structure as shown in FIG. 2F. The process conditions of the ashing step are as follows: the control process pressure is 45 mTorr; the power of the main power source is 400 watts, and the power of the bias power source is 0 watts; the reaction gas used includes oxygen, wherein the flow rate of the oxygen is 4%. 〇SCCM: The ashing step was performed for 90 seconds. The advantage of the present invention is to provide a method for improving the fence-like protrusion defects of the double metal mosaic structure. The invention can effectively eliminate and improve the fence-like protrusion defects in the trench, and obtain an excellent trench appearance, so the subsequent barriers Layers as well as electrochemical plating can have good step coverage. And can avoid causing the electrical instability of the component, and improve the reliability of the component. As will be understood by those familiar with this technology, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. Brief explanation in round form: Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the following is supplemented with Chinese characters.

Figure A to Figure A. D drawing plane profile flow

The structure of the opening is shown in the figure. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm). (Please read the precautions on the back before filling in this page>

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 573338 A7 B7 V. Description of the Invention () Figures 2A to 2F are cross-sectional views showing the manufacturing process of the opening of the double metal inlaid structure of the present invention. Correspondence explanation: 100, 200 substrate 102, 202 etch stop layer 104, 204 oxide layer 106, 206 dielectric layer 108, 208 dielectric coating 1 10, 210 dielectric window 1 1 2, 2 1 2 filling layer 1 1 4, 2 1 4 Photoresist layer 1 14a, 214a Photoresist dross 116 '216 Compound 120, 220 trench pattern 122 > 222 trench 132, 232 protrusion 133 fence-like protrusion defect 300 ion bombardment procedure This paper scale applies to China National Standard (CNS) A4 Specification (210X297 mm) (Please read the precautions on the back of t before filling this page)

Claims (1)

ABCD 573338 VI. Scope of patent application (please read the notes on the back before filling this page) 1. A method for improving the Fence Defect of the Dual Damascene structure, which is characterized by: After a trench is formed, before performing a photoresist ashing step, an ion bombardment step is performed to remove a protrusion generated in the trench forming step. 2. —A method for improving the defects of grid-like protrusions of a double metal mosaic structure, which uses a dry etching machine with dual RF powers', wherein the dry etching machine has a main power source and a bias voltage (Bias) power supply, the improvement method includes at least: providing a substrate, wherein a dielectric layer and a dielectric coating are sequentially stacked on the substrate, and a dielectric window is formed on the dielectric layer and the dielectric In the electrical coating layer; forming a filling layer in a part of the dielectric window; forming a photoresist layer to cover the dielectric coating layer, wherein a trench pattern is formed in the photoresist layer, and part of the photoresist layer A side wall of the interlayer window flows into the interlayer window to form a photoresist scum; a first dry etching process is performed to remove a portion of the dielectric coating printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A second dry etching process is performed to form a trench in the dielectric layer, wherein the photoresist residue and a portion of the dielectric layer form a protrusion; using the bias power to perform an ion bombardment Steps to remove the paper size applicable to the Chinese National Standard (CNS) A4 specification (210x297 public love) 573338 ABCDJ 6. The patent application scope highlights; and an ashing step, by which the soil is divided into t fines to remove the pre-resistance Layer and the filling layer, and a portion of the remaining termination layer is exposed. 3. The method for improving the protruding protrusion defect of the double metal embedded structure as described in the stated patent | &2; wherein the material of the dielectric layer is a low dielectric constant material and the dielectric coating The material is SiO2. 4. The method for improving a double metal mosaic junction barrier protrusion defect as described in item 3 of the patent application scope, wherein the low dielectric constant material is a Black Diamond material. 5. The method for improving the fence-like protrusion defect of the dual metal mosaic structure described in item 2 of the scope of the patent application, wherein the material of the filling layer is a photoresist material. 6. The method for improving the fence-like protrusion defect of the double metal mosaic structure as described in item 2 of the scope of the patent application, wherein the dry etching machine is a Tiger reaction chamber produced by Tokyo Electronics Co., Ltd. (TEL) of Japan. 7. The method for improving the barrier-like protrusion defects of the dual metal damascene structure according to item 2 of the scope of the patent application, wherein the process pressure of the first dry etching process is 80 millitorr (xnTorr; mT). 12 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page) Order% Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives ABCD Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative 573338 6. Application for patent scope 8. The method for improving the fence-like protrusion defect of the double metal mosaic structure as described in item 2 of the scope of patent application, wherein during the first dry etching process, the The power is 800 watts (w), and the power of the bias power supply is 0 watts. 9. The method for improving the barrier-like protrusion defects of the dual metal inlaid structure according to item 2 of the patent application scope, wherein the first The reactive gases used in the dry etching process include at least: carbon tetrafluoride (CF4), oxygen (02), and argon (Ar). 10. Double metal inlay as described in item 9 of the scope of the patent application Method for improving fence-like protrusion defects of structure, wherein the flow rate of carbon tetrafluoride is 80 standard cubic centimeters per minute (SCCM); the flow rate of oxygen is 2 SCCM; and the flow rate of argon The amount is 16 SCCM. 11. The method for improving the rotten-shaped protrusion defects of the double metal mosaic structure as described in the second item of the patent application scope, wherein the first dry-cut process is performed in 35 seconds. 12. The method for improving the fence-like protrusion defect of the dual metal mosaic structure as described in the second item of the patent application scope, wherein the process pressure of the second dry etching process is 80 mTorr. 13 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297mm) (Please read it · Notes on the back before filling in this page) 573338 A8 B8 C8 ------------------------- 6. Application for patent scope 1 3 · Double metal mosaic structure as described in item 2 of patent application scope 7 grid The method for improving the protrusion defects, wherein when the second dry etching process is performed, the power of the main power source is 800 watts, and the power of the bias power source is 0 watts. 1 4. The method for improving the defect of the thumb-shaped protrusion of the double metal mosaic structure according to item 2 of the scope of the patent application, wherein the reaction gas used in the second dry etching process includes at least: carbon tetrafluoride and nitrogen (N2), and an argon gas. 15 · The method for improving the barrier-like protrusion defects of the dual metal mosaic structure according to item 14 of the scope of the patent application, wherein the flow rate of the carbon tetrafluoride is 80 SCCM; the flow rate of the nitrogen gas is 100 sccM; and The flow rate of the argon gas is 160 SCCM 〇16. The method for improving the rotten protrusion defects of the double metal damascene structure described in item 2 of the patent application scope, wherein the second dry etching process is performed in 27 seconds. ............... Installation-I (Please read the notes on the back of t before filling out this page) Order% Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 1 7. If applying for a patent The method for improving the barrier-like protrusion defects of the dual metal damascene structure described in the second item, wherein the process pressure of the ion bombardment step is 30 mTorr. 14 This paper size applies to China National Standard (CNS) A4 (210X297 mm) 573338 Α8 Β8 C8 Sixth, the scope of patent application 18. The method for improving the barrier-like protrusion defects of the double metal mosaic structure described in item 2 of the scope of patent application, wherein when the ion bombardment step is performed, the power of the main power source is 500 watts, and the bias The power of the voltage source is between 200 watts and 300 watts. 19. The method for improving the barrier-like protrusion defects of the double metal mosaic structure described in item 2 of the scope of the patent application, wherein the reaction gas used in the ion bombardment step includes at least: nitrogen and oxygen. 20. The method for improving the barrier-like protrusion defects of the dual metal mosaic structure according to item 19 of the scope of the patent application, wherein the flow rate of the nitrogen gas is 200 SCCM; and the flow rate of the oxygen gas is 3 SCCM. 2 1 · The method for improving the barrier-like protrusion defect of the dual metal mosaic structure described in item 2 of the scope of the patent application, wherein the ion bombardment step is performed in 15 seconds. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 22. The method for improving the barrier-like protrusion defects of the double metal inlaid structure as described in item 2 of the scope of patent application, wherein the process pressure of the ashing step is 45 mTorr. 23.The double metal inlaid structure as described in item 2 of the scope of the patent application. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 573338 A8 B8 C8 D8. In addition, the improvement method described in the above description is as follows. When the ashing step is performed, the power of the main power source is 400 watts, and the power of the bias power source is 0 watts. 24. The method for improving the large grid-like defect of the double metal mosaic structure as described in item 2 of the patent claim, wherein the reaction gas used in the ashing step includes at least: oxygen. 25. The method for improving the barrier-like protrusion defects of the dual metal mosaic structure as described in item 24 of the scope of patent application, wherein the flow rate of the oxygen is 400 SCCM 〇 (Please read the precautions on the back of 1 * ^ before filling this page } • The method for improving the double grid barrier protrusion defect as described in item 2 of the scope of patent application, wherein the ashing step is performed in 90 seconds. 27. The double metal mosaic structure as described in item 2 of the scope of patent application The method for improving the barrier-like protrusion defects, wherein an oxide layer is formed between the etch stop layer and the dielectric layer. 2 8. —Improving method for grid-like protrusion defect of double metal mosaic structure'is using a dry etching machine with dual radio frequency power source, wherein the dry type engraving machine has a main power source and a bias power source, the The improvement methods include at least: 16 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm)% Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573338 ABCD 6. The scope of patent application provides a substrate, where the base An etch stop layer, an oxide layer, a dielectric layer, and a dielectric coating are sequentially stacked on the material, and a dielectric window is formed on the etch stop layer, the oxide layer, the dielectric layer, and the dielectric. In the cladding layer, a part of the etching stop layer is exposed, and a part of the interlayer window is filled with a filling layer, and the filling layer is covered on the exposed stop layer of the exposed portion; a photoresist layer is formed to cover On the dielectric coating, a trench pattern is formed in the photoresist layer, and part of the photoresist layer flows into the dielectric window along the sidewall of the dielectric window to form a photoresist residue; The photoresist layer is used as a hard mask to perform a first dry type engraving process to remove part of the dielectric coating; the photoresist layer is used to serve as a hard mask to perform a second dry etching process To form a trench in the dielectric layer, wherein the photoresist residue and a part of the dielectric layer form a protrusion; using the bias power to perform an ion bombardment step to remove the protrusion, wherein the protrusion The process conditions of the ion bombardment step include at least: the process pressure of the ion bombardment step is 30 mTorr; the power of the main power source is 500 watts, and the power of the bias power source is between 200 watts and 300 watts; the ion bombardment The reaction gas used in the step includes at least: a gas and an oxygen, wherein the flow rate of the nitrogen gas is 2000 SCCM; and the flow rate of the oxygen gas is 3 SCCM; and the duration of the ion bombardment step is 5 seconds; and This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) (Please read It-Notes on the back before filling out this page)-Order.% Intellectual Property Bureau Staff Consumer Cooperatives, Ministry of Economic Affairs Printed 573338 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Apply for a patent garden Perform the ashing step to remove the photoresist layer and the filling layer, and expose a part of the etch stop layer. 29. A method for improving a fence-like protrusion defect of a dual-metal mosaic structure according to item 28 of the scope of the patent application, wherein the material of the dielectric layer is a low-dielectric constant material and the material of the dielectric coating is oxynitride Silicon. 30. The method for improving the barrier-like protrusion defects of the dual metal damascene structure described in item 29 of the scope of the patent application, wherein the low dielectric constant material is a black diamond material. 31. The method for improving the rotten-like protrusion defects of the double metal damascene structure as described in the scope of the patent application, wherein the material of the filling layer is a photoresist material. 32. The method for improving a fence-like protrusion defect of a double metal mosaic structure as described in item 28 of the scope of the patent application, wherein the dry etching machine is a Tiger reaction chamber produced by Tokyo Electronics Co., Ltd. 33. The method for improving a fence-like protrusion defect of the dual metal damascene structure according to item 28 of the scope of the patent application, wherein the process pressure of the first dry etching process is 80 mTorr. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read «· Notes on the back before writing this page} 573338 Sixth, the scope of patent application 34. The method for improving the fence-like protrusion defects of the dual metal mosaic structure as described in item 28 of the patent application scope, wherein the power of the main power source during the first dry etching process is 1¾ of the power ^ 800. [Specifically, the power of the bias power supply is 0 watts. 35. The method for improving the barrier-like protrusion defects of the dual-metal-silver-embedded structure as described in item 28 of the scope of the patent application, wherein the reaction gas used in the first dry etching process includes at least: four carbonized gas, oxygen, And an argon gas. 36. A method for improving a fence-like protrusion defect of a dual metal mosaic structure according to item 35 of the scope of the patent application, wherein the flow of carbon tetrafluoride is 80 SCCM; the flow of oxygen is 2 SCCM; and the argon gas The flow rate is 160 SCCM. 37. The method for improving the barrier-like protrusion defects of the dual metal damascene structure described in item 28 of the scope of the patent application, wherein the duration of the first dry etching process is 35 seconds. (Please read #-Note on the back before filling this page) % Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 8. The method of improving the barrier-like protrusion defects of the dual metal inlaid structure described in item 28 of the scope of patent application, wherein the process pressure of the second dry etching process is 80 Mtor. 19 This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297). 573338 A8 B8 C8 D8 6. Scope of patent application (please read the notes on the back before filling this page) 3 9. If the scope of patent application is the 28th The method for improving a fence-like protrusion defect of the dual metal mosaic structure according to the item, wherein when the second dry etching process is performed, the power of the main power source is 800 watts, and the power of the bias power source is 0 watts. The method for improving the barrier protrusion defects of the dual metal damascene structure described in item 28 of the patent scope, wherein the reaction body used in the second dry etching process includes at least: carbon tetrafluoride, nitrogen, and argon 41. A method for improving a shed-like protrusion defect of a double metal mosaic structure according to item 40 of the scope of the patent application, wherein the flow rate of the carbon tetrafluoride is 80 SCCM; the flow rate of the nitrogen gas is 100 SCCM; And the flow rate of the argon gas is 160 SCCM. 42. The method for improving the barrier-like protrusion defects of the dual metal mosaic structure as described in item 28 of the scope of patent application, wherein the second dry type The engraving process takes 27 seconds. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 43. The method for improving the barrier-like protrusion defects of the double metal inlaid structure as described in the patent application No. 28, wherein the ashing step The process pressure is 45 mTorr. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 573338 A8 B8 C8 D8 6. Application for patent scope 44 · Dual metal as described in item 28 of the scope of patent application A method for improving a grid-like protrusion defect of a mosaic structure, wherein when the ashing step is performed, the power of the main power source is 400 watts, and the power of the bias power source is 0 watts. The method for improving the thumb-like protrusion defect of the double metal mosaic structure, wherein the reaction gas used in the ashing step includes at least: oxygen. 46. The grid of the double metal mosaic structure described in item 45 of the scope of patent application Method for improving shed-like protrusion defects, wherein the flow rate of oxygen is 400 SCCM. 47. The double metal inlaid structure as described in item 28 of the scope of patent application Method for improving fence-like protrusion defects, in which the ashing step is performed in 90 seconds. (Please read the precautions on the back before filling out this page) Order-% · Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs Standards apply to China National Standard (CNS) A4 (210 X 297 mm)