TW562932B - Method for manufacturing probes on a substrate and a probe card with the probes - Google Patents
Method for manufacturing probes on a substrate and a probe card with the probes Download PDFInfo
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- TW562932B TW562932B TW91105395A TW91105395A TW562932B TW 562932 B TW562932 B TW 562932B TW 91105395 A TW91105395 A TW 91105395A TW 91105395 A TW91105395 A TW 91105395A TW 562932 B TW562932 B TW 562932B
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562932 *562932 *
【發明領域】 本發明係有關於一種探針形成之方 -種以射出成形方式直接在_基成探:別係有關於 【先前技術】 成彳木針之方法。 當半導體晶圓製造完成後,其係需加 能’通常測試半導體裝置之測試設備包含有;^二:、:性性 休碉千导體日日圓之電極(electrode), 該電極之材料係為鋁或銅’其表面會產 二其探觸時電性接觸不良, r生接:: ,而增進對待測半導體晶圓之電 在美國專利申請案公開第200 1 /00549〇6號「測試卡及 其製造方法」中,揭示一種探測卡(probe card),其包 含有一配線板(wiring b〇ard )、複數個接觸端(叩仏) 及複數個探針(probes),其中該配線板内部係具有探測 電路配線板之表面係覆蓋一金屬層及形成有複數個接觸 j,該些接觸端係電性連接至配線板之探測電路,且接觸 端之位置係對應半導體晶圓上之積體電路,以供進行測 試’而複數個探針係以電鍍(plating)方式形成於接觸 端上,該些探針係呈S形,故每一探針係具有一接合端、 ,f =部及一探觸端,該接合端係連接至接觸端,兩彎曲 部係分別呈相對方向彎曲,使該些探針具有彈性,以提供[Field of the Invention] The present invention relates to a method for forming a probe-a method for directly forming a probe in an injection molding method: the other is related to [prior art] a method for forming alder needles. After the semiconductor wafer manufacturing is completed, it needs to be energized. The test equipment for testing semiconductor devices usually includes: ^ 2 :: sexually resting electrodes of thousand-conductor Japanese yen (electrode), the material of the electrode is The surface of aluminum or copper will produce poor electrical contact when it is touched, and the connection will be :::, and the electricity of the semiconductor wafer to be tested will be improved in US Patent Application Publication No. 200 1 / 00549〇6 "Test Card "And its manufacturing method", a probe card is disclosed, which includes a wiring board (wiring board), a plurality of contact terminals (叩 仏), and a plurality of probes. The surface of the wiring board with the detection circuit is covered with a metal layer and a plurality of contacts j are formed. The contact ends are electrically connected to the detection circuit of the wiring board, and the positions of the contact ends correspond to the products on the semiconductor wafer. Circuit for testing 'and a plurality of probes are formed on the contact end by plating, and these probes are S-shaped, so each probe system has a bonding end, f = section and A probe end, the joint end Connected to the contact end, two curved line portions are bent in an opposing direction, so that the plurality of elastic probe, to provide
第4頁 562932 . 五、發明說明(2) 探觸端與半導體晶圓間之良好的 ^ .L - 电『生接觸’然而,以電鐘 方式形成非垂直形狀之探針(如s 鍍 雜,且在製程控制上較為困難( 其製权較為複 及成本》 曾礼加製程製程所需人力、時間 【發明目的及概要】 本::之主要目的在於提供一種在基板上形成探針之 方法,其係以射出成形方式直接在一美 垂直形狀之探針,使探針t1 ^成垂直或非 可描# P M ^ U 針 成具有形狀之可變化性,且 J杈供良好的電性接觸。 方麥本ίi Γ §的在於提供一種在基板上形成探針之 垂直形狀之探針,使探2 基板上形成垂直或非: 1 便彳木針之製程具有高量產性。 裝置ϊίΓ=基板上形成探針之方法’其係在-射出 ^θ Μ Ψ # =知设置一模具,該模具係具有複數個模 射出^置之^内係填充有半溶融金屬’將半炼融金屬由 + : ' 口射出至一基板之複數個接觸端,以使探 針成形。 【發明詳細說明】 二參,所附圖式,本發明將列舉以下之實施例說明: 發^之第一具體實施例係為在基板上直接形成探針 之’ S玄些探針係以金屬射出成形(metal injection m〇lding,MIM)之方式形成,其製造方法詳述如後。 第1圖所示’準備一基板111 ’該基板111之材質係Page 4 562932. V. Description of the invention (2) Good ^ .L between the probe tip and the semiconductor wafer-Electrical "contact" However, non-vertical probes (such as s-plated s , And it is more difficult to control the process (its control power is more complex and cost.) Zeng Lijia manufacturing process required manpower and time [Objective and Summary of the Invention] The main purpose of this :: is to provide a method for forming a probe on a substrate It is a probe with a vertical shape in the United States by injection molding, so that the probe t1 ^ becomes vertical or non-traceable # PM ^ U The needle has a changeable shape, and the J branch provides good electrical contact . Fang Maiben Γ Γ § is to provide a probe with a vertical shape of the probe on the substrate, so that the probe 2 can form a vertical or not on the substrate: 1 The process of making a wooden needle has high mass productivity. Device ϊΓΓ = Method for forming a probe on a substrate 'It is-injection ^ θ Μ Ψ # = It is known that a mold is provided, and the mold is provided with a plurality of molds. ^ The internal system is filled with semi-melted metal. +: 'Multiple shots to a substrate [Detailed description of the invention] The second reference, the attached drawings, the present invention will enumerate the following embodiments: The first specific embodiment of the invention is to directly form a probe on the substrate. These probes are formed by metal injection molding (MIM), and the manufacturing method is described in detail below. 'Preparing a substrate 111' shown in Figure 1 The material system of the substrate 111
第5頁 562932 ^ 五、發明說明(3) 為陶兗’如陶瓷基板或多層陶瓷電路板(mu]L layer ceramic,MLC),該基板in係形成有複數個通孔112,以 供利用射出成形之方式在通孔112中形成探針113 (pr〇bes )° 而用以射出成形之射出裝置3〇〇 (injech〇n device )主要包含有熱溶爐310、送料螺桿320、出料口330、送 料斗340 (hopper)、促動機35〇 (injecti〇n actuat〇r) 及加熱器360 (heater),其中在出料口 33〇前端係設置有 一模具370,該模具370之材質係為金屬或陶瓷…等,其係 具有複數個模孔371,較佳地,該些模孔371之口徑係等於 基板11 1之通孔1 1 2 口控’且模孔3 7 1 —端係具有較大口 徑,以利於導入及射出半熔融金屬,而半熔融金屬 (semi-mol ten metal )係由送料斗34〇填充至射出裝置 300之熱熔爐310内部,並以加熱器36〇持續加熱熱熔爐31〇 内之半熔融金屬’使其保持熔融溫度(如鋁之熔融溫度約 500 °C及銅之熔融溫度約1 000它以上),該半熔融金屬係 由金屬粉末與黏結劑(或稱高分子結合劑)混煉而成,該 金屬粉末係可為銅、金、鎢、銀或鋁…等等,而射出裝置 300係以促動機350推動送料螺桿32〇,迫使半熔融金屬〜由 出料口 330前端之模具370之模孔371射出。 將基板111定位於模具370上,使模具37〇之複數個模 孔371對應於該基板ni之通孔112,半熔融金屬由射出裝 置300之出料口 330前端之模具37〇之模孔371流經基板 之通孔112 ’並垂直射出於該基板lu之表面因此半炼融 562932 . 五、發明說明(4) 金屬冷卻凝固,使探針1 1 3成形,較佳地,該基板1 1 1係置 於一可控溫之密閉空間,在探針丨丨3射出成形時,可使半 炼融金屬急速冷卻凝固,另,因半熔融金屬係藉由射出裝 置300内部之壓力(即促動機wo推動送料螺桿32()形成之 壓力)平均地射出,使探針丨丨3在形狀與高度上均具有良 好之一致性’可降低接觸阻抗(contact resistance), 以增進對待測半導體晶圓之電性接觸性。Page 5 562932 ^ V. Description of the invention (3) It is a ceramic substrate such as a ceramic substrate or a multilayer ceramic circuit board (mu) L layer ceramic (MLC). The substrate in is formed with a plurality of through holes 112 for injection. Forming method A probe 113 (prObes) is formed in the through hole 112, and an injection device 300 (injechon device) for injection molding mainly includes a thermal melting furnace 310, a feeding screw 320, and a discharging port. 330. A hopper 340, an injection actuat 35 and a heater 360, wherein a mold 370 is provided at the front end of the material outlet 33, and the material of the mold 370 is Metal or ceramic ... etc., It has a plurality of die holes 371. Preferably, the diameter of these die holes 371 is equal to the through hole 1 1 2 of the substrate 11 1 and the die holes 3 7 1 are provided at the end. Larger diameter to facilitate the introduction and injection of semi-molten metal. The semi-molten metal is filled from the hopper 34 to the inside of the hot-melt furnace 310 of the injection device 300, and is continuously heated by a heater 36. The temperature of the semi-molten metal within the furnace is kept at a melting temperature (such as the melting of aluminum The temperature is about 500 ° C and the melting temperature of copper is about 1 000 or more). The semi-molten metal is made by mixing metal powder with a binder (or polymer binder). The metal powder can be copper or gold. , Tungsten, silver, aluminum, etc., and the injection device 300 is used to push the feeding screw 32 with the booster 350 to force the semi-molten metal ~ to be injected from the die hole 371 of the die 370 at the front end of the outlet 330. The substrate 111 is positioned on the mold 370 so that the plurality of mold holes 371 of the mold 37 correspond to the through holes 112 of the substrate ni. The semi-molten metal is passed through the mold holes 371 of the mold 37 at the front end of the ejection opening 330 of the injection device 300. It flows through the through hole 112 ′ of the substrate and shoots out perpendicularly from the surface of the substrate lu, so it is semi-melted 562932. V. Description of the invention (4) The metal is cooled and solidified, so that the probe 1 1 3 is formed. Preferably, the substrate 1 1 1 series is placed in a temperature-controlled closed space. When the probe 丨 3 is injected and formed, the semi-refined metal can be rapidly cooled and solidified. In addition, the semi-molten metal is caused by the pressure inside the injection device 300 (ie The motivation wo pushes the feeding screw 32 () to form the pressure evenly, so that the probes 3 and 3 have good consistency in shape and height. 'The contact resistance can be reduced to improve the semiconductor wafer to be tested. Electrical contact.
以上述過程製作完成之探針113係為生胚(green compact) ’之後,將該些探針113進行脫脂(debinding )’以脫除先前混入之黏結劑,再以1 2 〇 〇 °c左右之高溫燒 j sinter ing )(如常壓燒結、氣氛燒結或熱壓燒結… 荨專),使a亥些板針1 1 3之結構較為密實,而具有高密度 (9 5 %以上)、高機械性及高可電鍍性,如第2圖所示, 该形成有探針11 3之基板111即成為一探測頭丨丨〇 ( pr〇be head )’其係可與一多層陶瓷電路板12〇及一多層印刷電 路板11 0構成一測試卡丨〇 〇,其中該陶瓷電路板丨2 〇係電性 連接至多層印刷電路板130,該多層陶瓷電路板丨2〇之尺寸 係於該多層印刷電路板丨30之尺寸,而探測頭n〇係結合 於該多層陶瓷電路板12〇,該探測頭11()之探針丨13 一端係 填充於通孔Π2内,並垂直形成於基板丨丨1之表面,以供測 試半導體晶圓,因此藉由射出成形方式形成探針丨丨3,在 製程上可節省所需人力、時間及成本等等。 本發明之第二具體實施例,係如第3圖所示,該基板 21〇内部係具有探測電路(圖未繪出),其表面係形成有The probes 113 made according to the above process are green compact. After that, the probes 113 are debinding to remove the previously mixed binders, and then the temperature is about 12 ° C. High-temperature firing (such as atmospheric sintering, atmospheric sintering or hot-pressing sintering ...), making the structure of these pins 1 1 3 more compact, and has a high density (more than 95%), high Mechanical property and high electroplatability. As shown in FIG. 2, the substrate 111 with the probe 11 3 formed thereon becomes a probe head. It can be used with a multilayer ceramic circuit board. 120 and a multilayer printed circuit board 110 constitute a test card. The ceramic circuit board is electrically connected to the multilayer printed circuit board 130. The size of the multilayer ceramic circuit board is The multilayer printed circuit board has a size of 30, and the probe head no is combined with the multilayer ceramic circuit board 120. One end of the probe 11 of the probe head 11 () is filled in the through hole Π2, and is formed vertically. The surface of the substrate 丨 丨 1 is used for testing semiconductor wafers, so by injection molding To probe Shushu 3, in the manufacturing process may be required to save manpower, time and cost and the like. The second specific embodiment of the present invention is shown in FIG. 3. The substrate 21 has a detection circuit (not shown) inside, and the surface is formed with
562932 ‘ 五、發明說明(5) 複數個接觸端2 1 1 (如焊墊或電性接點),該接觸端2丨}上 另形成有以電鍍或蒸鍍方式形成之凸塊212,以供利用射 出成形之方式形成探針213,如同本發明之第一具體實施 例,射出裝置30 0之出料口 330前端亦設置一具有複數個模 孔371之模具370 ’由送料斗340填充半炼融金屬 (semiiolten metal )至射出裝置3〇〇之熱熔爐31〇内 部,但該基板210係以一移動裝置22〇定位於模具37〇前 方’使基板210之接觸端211對應於模具37〇之模孔37ι,而 該移動裝置220係可控制基板210水平與垂直旋動,該射出 裝置300係以促動機350推動送料螺桿320,迫使半熔融金 屬由出料口330射出,在射出之同時,該移動裝置220係可 配合所需之探針213形狀,水平與垂直旋動基板21〇,或是 移動4射出裝置3〇〇 ’使抓針213在半溶融金屬冷卻凝固前 構成所需之形狀,較佳地,在該移動裝置2 2 〇内設有冷卻 裝置(圖未繪出),以使半熔融金屬可急速冷卻凝固成所 需探針之形狀。· Φ 藉由上述金屬射出成形方式,及配合移動裝置220控 制基板2 1 〇水平與垂直旋動,即可有效率地形成各種彎曲 形狀之探針,如第4圖所示,基板4 1 0之接觸墊4 1 1上係形 成有複數個探針4 1 2,該些探針4 1 2係呈螺旋壓縮彈簧 Chelical spring)之形狀,其係在探針412射出成形 時’藉由移動裝置220控制基板210作水平與垂直旋動而形 成’另如第5圖所示,基板410上之複數個探針413係呈塔 形壓縮彈簧之形狀(conical spring),該些探針413係562932 'V. Description of the invention (5) A plurality of contact terminals 2 1 1 (such as solder pads or electrical contacts), the contact terminals 2 丨} are further formed with bumps 212 formed by plating or evaporation, and For forming the probe 213 by injection molding, as in the first embodiment of the present invention, the front end of the ejection opening 330 of the injection device 300 is also provided with a mold 370 having a plurality of mold holes 371. Smelting metal (semiiolten metal) to the inside of the hot furnace 31o of the injection device 300, but the substrate 210 is positioned in front of the mold 37 by a moving device 22 ′ so that the contact end 211 of the substrate 210 corresponds to the mold 37. The die hole is 37m, and the moving device 220 can control the horizontal and vertical rotation of the substrate 210. The injection device 300 is used to push the feeding screw 320 with a booster 350 to force the semi-molten metal to be ejected from the discharge port 330. The moving device 220 can match the shape of the required probe 213, rotate the substrate 21 horizontally and vertically, or move the 4 injection device 300 ′ to make the grasping needle 213 constitute the required before the semi-molten metal cools and solidifies. Shape, preferably, A cooling device (not shown) is provided in the moving device 220 so that the semi-molten metal can be rapidly cooled and solidified to the shape of the required probe. · Φ Through the above-mentioned metal injection molding method, and cooperate with the mobile device 220 to control the substrate 2 1 0 horizontal and vertical rotation, you can efficiently form a variety of curved probes, as shown in Figure 4, the substrate 4 1 0 A plurality of probes 4 1 2 are formed on the contact pad 4 1 1. The probes 4 1 2 are in the shape of helical compression springs. They are formed by the moving device when the probe 412 is formed. 220 The control substrate 210 is rotated horizontally and vertically to form 'Also as shown in Fig. 5, a plurality of probes 413 on the substrate 410 are in the shape of a tower compression spring (conical spring), and these probes 413 are
第8頁 562932 五、發明說明(6) 藉由移動裝置220控制基板210作水平與垂直旋動及射出裝 置3 〇 〇之移動而形成,該些呈螺旋形狀之探針4丨2、41 3係 具有極佳的彈性,在測試時能提供更佳的電性接觸。 且右,在本發明中,該些探針係可為非垂直狀,使其 Aj,之後,再進行脫脂及燒結,使該些探針之結構 ,並具有高密度、高機械性及高可電鍍性,在探 極些具有彈性之探針能一致性地穿刺電 好,而因lro山 、,以降低接觸阻抗,使電性接觸良 探針之製程具有高量產⑯, ϊύά 作完成,故藉由射屮占W 4曲形狀均可有效率地製 化性,且在製浐上叮Μ 2式形成探針更具有形狀之可變 故本以二卽!:需人力、時間及成本等等。、 者為準,任何熟知此 心甲吻專利範圍所界定 範圍内所作之任何 ;;^,在不脫離本發明之精神和 圍。 人k改,均屬於本發明之保護範 562932Page 8 562932 V. Description of the invention (6) It is formed by moving the device 220 to control the substrate 210 for horizontal and vertical rotation and the movement of the injection device 300. These spiral-shaped probes 4 丨 2, 41 3 The system has excellent elasticity and can provide better electrical contact during testing. And right, in the present invention, the probes can be non-vertical, so that they can be Aj, and then degreased and sintered to make the structure of the probes high density, high mechanical properties and high availability. For electroplating, some flexible probes can consistently pierce the electricity, but because of the lro mountain, the contact resistance is reduced, so that the process of good electrical contact probes has high mass production. Therefore, the shape can be efficiently controlled by shooting the W 4 curve shape, and the probe can be formed in the shape of the M 2 type on the system to have a more variable shape. : Requires manpower, time, cost, etc. Whichever prevails, any person who is familiar with what is done within the scope defined by the scope of this patent, does not depart from the spirit and scope of the present invention. Persons who are modified belong to the protection scope of the present invention 562932
【圖式說明】 第1圖:依本發明之第一具體實施例,以射出成形方 基板上直接形成探針之截面圖;及 式 第2 依本發明之第一具體實施例中, 圖; 探測卡之截 在 面 第3圖:依本發明之第二具體實施例中,以射 it}成形太4 在基板上直接形成非垂直形狀之探針截面 二 第4圖··依本發明之射出成形方式在基板上直接形螺 壓縮彈簧形狀之探針側視圖;及 ’、疋 第5圖·依本發明之射出成形方式在基板上直接形成塔形 壓縮彈簧形狀之探針側視圖。 ° 【圖號說明】 1 0 0 探測卡 1 1 0 探測頭 111基板 120多層陶瓷 1 3 0多層印刷 2 1 0基板 211接觸端 220移動裝置 3〇〇射出裝置 31 0熱熔爐 3 4 0 送料斗 370模具[Explanation of drawings] FIG. 1: a cross-sectional view of a probe directly formed on an injection-molded square substrate according to a first embodiment of the present invention; and FIG. 2 is a diagram of a first embodiment according to the present invention; Sectional view of the probe card Figure 3: According to the second embodiment of the present invention, the shape of the probe is shot to form a non-vertical cross section of the probe directly on the substrate. Figure 2 according to the present invention A side view of a probe in which a screw compression spring shape is directly formed on a substrate by injection molding; and FIG. 5 · A side view of a probe in which a tower compression spring shape is directly formed on a substrate according to the injection molding method of the present invention. ° [Illustration of drawing number] 1 0 0 probe card 1 1 0 probe head 111 substrate 120 multilayer ceramic 1 3 0 multilayer printing 2 1 0 substrate 211 contact end 220 mobile device 300 injection device 31 0 hot melt furnace 3 4 0 feeding hopper 370 mold
11 2通孔 電路板 電路板 21 2凸塊 3 2 0送料螺桿 3 5 0促動機 11 3探針 21 3探針 330出料口 360加熱器 犓11 2 Through hole Circuit board Circuit board 21 2 Bump 3 2 0 Feed screw 3 5 0 Actuator 11 3 Probe 21 3 Probe 330 Outlet 360 Heater 犓
562932 圖式簡單說明 3 7 1 模孔 4 1 0 基板 4 11 接觸端 41 2探針 41 3探針 ΙΙΗΙΙ562932 Brief description of the drawing 3 7 1 Die hole 4 1 0 Substrate 4 11 Contact end 41 2 Probe 41 3 Probe ΙΙΗΙΙ
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TW91105395A TW562932B (en) | 2002-03-19 | 2002-03-19 | Method for manufacturing probes on a substrate and a probe card with the probes |
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TW91105395A TW562932B (en) | 2002-03-19 | 2002-03-19 | Method for manufacturing probes on a substrate and a probe card with the probes |
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TW91105395A TW562932B (en) | 2002-03-19 | 2002-03-19 | Method for manufacturing probes on a substrate and a probe card with the probes |
Country Status (1)
Country | Link |
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TW (1) | TW562932B (en) |
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2002
- 2002-03-19 TW TW91105395A patent/TW562932B/en not_active IP Right Cessation
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