KR20110060628A - Anisotropic conductive adhesive and method for packaging semiconductors using the same - Google Patents

Abstract

PURPOSE: An anisotropic conductive adhesive is provided to secure enough electrical connection between terminals, and excellent thermal conductivity in a heating/pressurizing process by heat dissipation particles, and to prevent short circuit by conductive particles. CONSTITUTION: An anisotropic conductive adhesive comprises: conductive particles(100) including a nucleus having the conductive surface and an insulating layer formed on the surface of nucleus; an adhesive insulating resin(10) in which hardening is not completed at a melting point of the conductive surface; and heat dissipation particles(200) which is not molten at a temperature where the hardening of the adhesive insulating resin is completed.

Description

Anisotropic conductive adhesive and method for packaging semiconductors using the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive adhesive, and more particularly, to an anisotropic conductive adhesive having improved heat dissipation while ensuring sufficient electrical connection between terminals such as terminals facing each other and a method for mounting a semiconductor using the same.

Generally, a conductive adhesive disperses conductive particles such as metals in a resin, and is an electrode bonding material capable of obtaining conductivity between opposing electrodes and insulating properties between adjacent electrodes.

That is, the conductive particles contained in the conductive adhesive enable conduction between the counter electrodes, while the insulation contained between the adjacent electrodes is ensured by the resin contained in the conductive adhesive, and the opposing electrodes are adhered to each other to bond the chip and the substrate. It is fixed.

In recent years, in order to meet the demand of high speed, large capacity, miniaturization, and light weight, the development of mounting technology for realizing high integration and high density of electronic components such as semiconductor tips is progressing, and in particular, mounting of electronic devices with low heat resistance temperature In the case of performing the above, it is required to be bonded at low temperature in order to prevent deterioration.

However, in the conventional conductive adhesive, the conductive particles are electrically conductive through the physical contact between the metal pads of the upper substrate and the lower substrate, so that the contact resistance is very large, the ultrafine pitch is difficult, and the repair characteristics are inferior.

In addition, electronic devices including semiconductors inevitably generate continuous heat, and there is a limit in the ability of the adhesive to transfer heat, so that heat is locally concentrated and hot spots occur.

The present invention is to solve the above problems, the object of the present invention is to ensure sufficient electrical connection between the terminals such as opposing terminals, and to ensure sufficient insulation between adjacent terminals can be applied to ultra-fine pitch The present invention provides an anisotropic conductive adhesive having excellent repair characteristics and particularly improved heat dissipation, and a method of mounting a semiconductor using the same.

In order to achieve the above object, the present invention provides a conductive particle comprising a nucleus having a conductive surface and an insulating film coated on the surface of the nucleus, an adhesive insulating resin that hardening is not completed at the melting point of the conductive surface, and the It includes heat-dissipating particles that do not melt at a temperature at which curing of the adhesive insulating resin is completed.

In addition, an insulating layer comprising a conductive layer having an insulating film formed on a nucleus having a conductive surface and an insulating layer containing an adhesive insulating resin, and an adhesive insulating resin whose curing is not completed at the melting point of the conductive surface of the conductive particles. Include.

At this time, the heat radiation particles that do not melt at the conductive surface melting point of the conductive particles may be included in the conductive layer and the insulating layer.

In addition, the present invention provides a conductive particle comprising a nucleus having a conductive surface and an insulating film coated on the surface of the nucleus between the electrode of the semiconductor chip and the electrode of the substrate, and the adhesive insulation that hardening is not completed at the melting point of the conductive surface. Disposing an anisotropic conductive adhesive comprising a resin, and heat-dissipating particles that do not melt at a temperature at which curing of the adhesive insulating resin is completed, and higher than a melting point of the conductive surface of the nucleus, while curing of the adhesive insulating resin Heating to an incomplete temperature, heating / pressurizing the anisotropic conductive adhesive to a degree that the insulating film of the conductive particles is destroyed, and curing the adhesive insulating resin.

According to the above configuration, the present invention can secure sufficient electrical connection between terminals such as opposite terminals, and has excellent thermal conductivity during the heating / pressing process by the heat-dissipating particles, prevents short circuits by the conductive particles, and generates internally. There is an effect that can easily release the heat.

In addition, by blocking the penetration of air or moisture by the heat-dissipating particles can prevent the performance degradation of electronic products and extend the life.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description.

 However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms including ordinal numbers such as first and second may be used to describe various components, but the components are not limited by the terms.

The terms are used only for the purpose of distinguishing one component from another.

For example, without departing from the scope of the present invention, the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected or connected to that other component, but it may be understood that other components may be present in between. Should be.

On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

In the present application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In addition, it is to be understood that the accompanying drawings in this application are shown enlarged or reduced for convenience of description.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings. Like reference numerals designate like elements throughout, and duplicate descriptions thereof will be omitted.

In the present invention, 'wetability' refers to a property in which a liquid or a solid spreads on a solid surface, and defines an extent of adhesion, adhesion, or adhesion of an adhesive to a solid surface.

Referring to FIG. 1, the anisotropic conductive adhesive according to the first embodiment of the present invention includes a conductive particle 100 including a nucleus having a conductive surface and an insulating film coated on the surface of the nucleus, and the conductive particles 100 of the conductive particle 100. The adhesive insulating resin 10, which does not complete curing at the melting point of the conductive surface, and heat-dissipating particles 200 that do not melt at a temperature at which curing of the adhesive insulating resin 10 is completed.

The anisotropic conductive adhesive having such a configuration electrically connects the conductive particles 100 between electrode terminals of a semiconductor substrate (not shown) during heating / pressurization for semiconductor mounting, and the adhesive insulating resin 10 is electrically Insulates portions other than the connection, and the heat-dissipating particles 200 easily releases heat generated inside the adhesive.

At this time, the anisotropic conductive adhesive may be in the form of a paste or may be in the form of a film according to the embodiment.

The nucleus having the conductive surface means that the conductive metal or alloy component is formed at least from the surface of the nucleus to the inside of the predetermined thickness, and thus, of course, includes the whole nucleus composed of the meltable metal or alloy component. do.

2A to 2C are for the first to third embodiments of the conductive particles, the nuclear body is a polymer (resin) particles (101a), meltable metals and alloys (101b), low melting point metals and alloys (101c) It can be composed of).

In this case, the meltable metal or alloy refers to a metal or alloy that is not melted at a temperature at which curing of the adhesive insulating resin 10 is completed, and the low melting point metal or alloy refers to a temperature at which curing of the adhesive insulating resin is completed. Defined as a metal that melts at low temperatures.

The conductive surface is composed of a low melting point metal or alloy 102a, 102b to enclose the nucleus.

The nucleus 101a, 101b, 101c and the conductive surfaces 102a, 102b are, for example, tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), cadmium (Cd), gallium (Ga), silver (Ag), tarium (Tl), and the like may be selected.

In addition, Sn-57Bi, Sn-52In, Sn-44In-14Cd, etc. having a lower melting point based on Sn-37Pb having a melting point (melting point) of 183 ° C, Sn-3.5Ag, Sn-2.5Ag- 10Sb, Sn-4.7Ag-1.7Cu and the like can be used.

In addition, the above-mentioned metal and the alloy may be mixed to form a nucleus body and a conductive surface, and other metals or alloys may be mixed with the above-mentioned metal or alloy.

For example, the nucleus 101b is composed of silver (Ag), which is conductive particles, and the conductive surface 102b has a low melting point. Sn-52In alloy having, and when heated to the curing temperature of the adhesive insulating resin by this configuration, the nucleus 101b is not melted, but the conductive surface 102b is melted.

An insulating film 103 is formed on the surface of the nucleus of the anisotropic conductive adhesive according to the present invention in order to ensure insulation between adjacent connection electrodes. The material or thickness of the insulating film 103 is not particularly limited, but the connection part is crimped. In this case, a resin which can be broken so that the conductive component of the molten conductive surface 102b can flow out can be used.

3A to 3C further include fine particles in FIGS. 2A to 2C, and when the fine particles 104 are included in the insulating film 103, the particles 104 may be partially exposed from the surface of the insulating film 103. have.

Although the type of the fine particles 104 is not particularly limited, it is preferable to use a larger one than the hardness of the insulating film 103 so that the insulating film 103 easily breaks when pressurized. As the fine particles 104, a ceramic such as silicon dioxide may be used. Can be.

That is, the insulating film 103 is easily cleaved by the fine particles 104 having a high hardness at the time of heating / pressurization for mounting the semiconductor chip to further improve the insulation.

In addition, the fine particles 104 may be used as both conductive particles and insulating particles if it performs the role as described above may be composed of heat radiation particles described later.

In the case where the fine particles 104 are formed of heat-dissipating particles 200 which will be described later, the nucleus bodies 101a, 101b, 101c and the conductive surfaces 102a and 102b are broken by pressing the insulating film 103 when pressed. And electrically coupled thereto, and are then positioned around the electrode terminals to effectively discharge heat emitted from the electrode terminals to the outside.

The heat dissipation particle 200 serves to increase the thermal conductivity. The heat dissipation particle 200 may shorten the process time due to rapid heat conduction during the heating / pressurization process for mounting a semiconductor chip such as a semiconductor. The heat generated after mounting is quickly released to the outside.

The heat dissipation particle 200 has a melting point higher than the heating temperature at the time of adhesion to withstand heat and pressure, preferably a material that is not melted at a temperature at which curing of the adhesive insulating resin 10 is completed. Can be.

In addition, the heat dissipation particles 200 may be variously selected from several nm to several tens of micrometers according to the size of the conductive particles 100, and preferably, about 1/2 to about the average particle diameter of the conductive particles 100. It may be configured within 1/10, and particularly preferably may be configured to be smaller than the final junction distance of the electrode of the substrate (not shown) and the semiconductor element (not shown).

In addition, the heat-dissipating particles 200 may have a different shape than a spherical shape, and the particles may include spherical particles having different diameters to increase the contact area.

When the heat dissipation particles 200 are properly dispersed in the adhesive insulating resin 10, heat passing through the common electrode is quickly discharged to the outside by the heat dissipation particles 200. Therefore, excessive temperature rise can be prevented by the generated heat.

On the other hand, it blocks the infiltration of air or moisture and bypasses the infiltration path, reducing the infiltration of air or moisture. As a result, deterioration due to moisture, air, or heat is reduced, thereby preventing performance degradation of electronic products and extending the lifespan.

Hereinafter, the heat dissipation particles 200 may be formed of a non-conductive material. For example, polymer particles such as Teflon and polyethylene or silicon-based materials such as alumina, silica, glass, and silicon carbide may be used. It may be used or may be composed of a mixture thereof.

 Therefore, the heat dissipation particle 200 is located between the conductive particles 100 and additionally plays a role of preventing a short circuit between the conductive particles 100. However, when the heat-dissipating particles 200 made of the non-conductive material are included in a volume ratio of 50% or more with respect to the adhesive insulating resin 10, current is supplied between the electrode terminals by the heat-dissipating particles 200 having electrical conductivity. It may be inhibited, there is a problem that the sufficient thermal conductivity effect is not obtained when included in a volume ratio of less than 3% with respect to the adhesive insulating resin (10).

Therefore, when the heat dissipation particle 200 is composed of a non-conductive material, the heat dissipation particle 200 is preferably included in a volume ratio of 3% to 50% with respect to the adhesive insulating resin (10).

In addition, the heat dissipation particles 200 may be made of a conductive material, and examples of the conductive material include one selected from the group consisting of gold, silver, copper, tungsten, carbon nanotubes (CNT), graphite, and mixtures thereof. The above can be selected.

In this case, when the conductive particles 100 are melted and combined with the metal terminals during heating / pressurization, the conductive particles 100 have sufficient conductivity even when the heat-dissipating particles 200 are included therein, so that the current between terminals does not occur.

In addition, as described above, the heat dissipation particles 200 may be not only composed of a conductive material or a non-conductive material, but may be modified in various forms included in an adhesive to perform a heat dissipation function.

For example, the non-conductive material and the conductive material may be alternately coated or the polymer particles may be alternately coated with the conductive material or the non-conductive material.

Hereinafter, the adhesive insulating resin 10 may be a resin component which is widely known in the technical field to which the present invention pertains, in addition to using a resin in which curing is not completed at a temperature at which the conductive surface of the conductive particles 100 is melted. have.

For example, any one selected from the group consisting of a thermosetting resin, a thermoplastic resin, a photocurable resin, and a mixture thereof may be used. When the thermosetting resin is used, it is heated to the curing temperature of the resin and cured, and a thermoplastic resin is used. In the case, after heating up to the melting point of the conductive component, it is cooled to the curing temperature of the resin and cured, and when the photocurable resin is used, light irradiation is performed to start the polymerization reaction and cured.

Specifically, examples of the thermosetting resin include epoxy resins, urethane resins, acrylic resins, silicone resins, phenolic resins, melamine resins, alkyd resins, urea resins, acrylic resins, unsaturated polyester resins, and the like. Examples of the thermoplastic resin include vinyl acetate resin, polyvinyl butynal resin, vinyl chloride resin, styrene resin, vinyl methyl ether resin, urethane resin, grevyl resin, ethylene-vinyl acetate copolymer resin, styrene-butadiene copolymer system Resins, polybutadiene resins, polyvinyl alcohol resins, and the like.

The photocurable resin is a mixture of a photopolymerizable monomer, a photopolymerizable oligomer, a photopolymerization initiator and the like, and refers to a polymerization reaction initiated by light irradiation. Examples of the photopolymerizable monomer and photopolymerizable oligomer include acrylic acid ester monomers and methacryl. Acid ester monomers, ether acrylates, urethane acrylates, epoxy acrylates, amino resin acrylates, unsaturated polyesters, silicone resins and the like.

In addition, a surface activation resin having a surface activation effect of activating the surface of the conductive particles 100 or the electrode surface of the terminal may be used as the resin. The surface-activated resin has a reducing property for reducing the surface of the conductive particles 100 or the electrode surface of the terminal. For example, a surface-activated resin may be used to heat and liberate an organic acid. By using such a surface-forming resin, the surface of the conductive component or the electrode surface of the terminal can be activated to improve the wetting characteristics of the conductive component on the electrode of the terminal, thereby promoting aggregation of the conductive component.

On the other hand, the anisotropic conductive adhesive according to the present invention may further contain a flux, a surface active agent, a curing agent and the like in addition to the main component.

The flux is not particularly limited, and examples thereof include reducing agents such as resins, inorganic acids, amines, and organic acids. Flux is reduced by removing foreign substances such as oxides on the surface of the molten conductive particles 100 and the surface of the upper and lower electrode pads to change into soluble and fusible compounds.

In addition, the surface foreign matter is removed to cover the surface of the conductive particles 100 and the upper and lower electrode pad surface to be cleaned to prevent reoxidation.

The surface active agent is not particularly limited, and examples thereof include glycols such as ethylene glycol and glycerin, organic acids such as maleic acid and azipine acid, amine compounds such as amines, amino acids, organic acid salts of amines, and halogen salts of amines and inorganic acids. Foreign substances on the surface of the molten conductive particles 100 or the surface of the opposite upper and lower electrode pad surfaces are dissolved and removed with an inorganic acid salt or the like.

Here, the flux or the surface active agent is preferably to have a boiling point higher than the melting point of the conductive particles 100 and lower than the maximum curing temperature of the resin. At this time, the flux of the anisotropic conductive film or the content of the surface active agent is 20wt% or less, preferably 10wt% or less.

In addition, a hardening | curing agent is not specifically limited, For example, hardening of resin can be accelerated | stimulated with indicator anamide, imidazole, etc.

4 is a schematic diagram of an anisotropic conductive adhesive according to a second embodiment of the present invention.

The anisotropic conductive adhesive according to another embodiment of the present invention is an adhesive insulation that hardening is not completed at the melting point of the conductive particles 100 and the conductive surface of the conductive particles 100 having an insulating film formed on the core having a conductive surface Film form including an insulating layer 20 comprising a conductive layer 30 comprising a resin 10 and an adhesive insulating resin 10 that hardening is not completed at the melting point of the conductive surface of the conductive particle 100. It consists of.

In this case, the heat dissipation particles 200 which are not melted at the temperature at which curing of the adhesive insulating resin 10 is completed may be included in at least one or more layers of the conductive layer 30 or the insulating layer 20.

This configuration has the advantage of high adhesion and electrical connection reliability by coating the conductive particles 100 with an insulating film, and additionally forming an insulating layer 20 composed of an adhesive insulating resin.

In this case, the adhesive insulating resin 10 of the conductive layer 30 and the adhesive insulating resin of the insulating layer 20 may be made of the same material so as not to be divided into one when heating / pressing.

5 to 7 are schematic views of the anisotropic conductive adhesive according to the third to fifth embodiments according to the embodiment of the present invention.

Such a multilayer structure may be formed by alternately stacking the conductive layer 30 and the insulating layer 20. The conductive layer 30 and the insulating layer 20 may be arranged in an equal number, and the conductive layer ( Any one of 30 and the insulating layer 20 may be arranged in a larger number. This configuration has the effect that the insulating layer 20 is formed a large number to improve the adhesiveness and insulation.

Hereinafter, since the conductive particles 100, the heat dissipating particles 200, and the adhesive insulating resin 10 are the same as described above, detailed descriptions thereof will be omitted to avoid duplication.

Next, the terminal-to-terminal connection method and the semiconductor device mounting method according to the present invention will be described in detail.

8 is a bonding diagram in which an anisotropic conductive adhesive is disposed between a substrate and a semiconductor chip in a semiconductor mounting method according to an embodiment of the present invention, and FIG. 9 is an electrode of a substrate and a semiconductor chip in a semiconductor mounting method according to an embodiment of the present invention. It is the final bond which formed the junction between, and FIG. 10 is an enlarged view of the part A of FIG.

In the embodiment of the present invention, a conductive surface 102b made of a low melting point metal or an alloy is formed on the meltable nucleus 101b of FIG. 3B, and conductive particles coated with an insulating film 103 including fine particles 104 on the outside thereof. As an example, the connection between the substrate electrode 122 formed on the substrate 121 and the semiconductor chip electrode 112 of the semiconductor chip 111 mounted thereon is performed using an anisotropic conductive adhesive including 100.

A plurality of substrate electrodes 122 formed on the substrate 121 and a plurality of semiconductor chip electrodes 112 of the semiconductor chip 111 mounted thereon are opposed to each other with an anisotropic conductive adhesive according to an embodiment of the present invention interposed therebetween. To place.

Subsequently, the substrate 121 and the semiconductor chip 111 may be destroyed so that the insulating film 103 of the conductive particle 100 may be destroyed by the fine particles 104 while heating the molten conductive surface 102b of the conductive particle 100. Narrowing the interval of the heating / pressing to apply a pressure to the conductive particles 100 is subjected to.

Referring to FIG. 10, at the heating temperature, the nucleus 101 is not melted and is constrained through mechanical / physical coupling at the connection electrodes 112 and 122 by pressure, thereby electrically connecting the electrodes 112 and 122.

In addition, the conductive surface 102 of the nucleus 101 melts at the heating temperature to electrically connect the electrodes 112 and 122 between the electrodes 112 and 122 while surrounding the nucleus 101. At this time, the insulating film 103 surrounds the conductive surface 102 and serves to insulate the adjacent conductive particles 100.

As described above, the heat dissipating particle 200 has a higher melting point than the conductive particle 100 and a size smaller than 1/10 to 1/2 of the conductive particle 100, evenly in the adhesive insulating resin 10 when pressurized. It is dispersed and effectively releases heat to the outside.

Subsequently, when the curing step for the adhesive insulating resin 10 is performed, the bonding method according to the present invention is completed. The curing step of the resin may be appropriately performed by heating or light irradiation depending on the type of resin used.

In the above-described embodiment, the conductive particles 100 have been described in the case of FIG. 3B for convenience, but are not necessarily applicable thereto, and all of the conductive particles 100 mentioned in the description of FIGS. 2 to 3 can be used.

In addition, the conductive layer 30 may be in contact with both surfaces of the insulating layer 20, or the conductive layer 30 and the insulating layer 20 may be variously configured, such as a structure in which four or five are stacked.

And. The anisotropic conductive adhesive may be formed in a film and disposed between the substrate 122 and the semiconductor chip 111 to be bonded to each other, and may be formed as a paste to be entirely filled between the substrate 122 and the semiconductor chip 111 or may be formed of an electrode. Only locally filled may connect the substrate and the semiconductor chip.

Preferred embodiments of the present invention described above are disclosed for purposes of illustration, and those skilled in the art having various ordinary knowledge of the present invention may make various modifications, changes, and additions within the spirit and scope of the present invention. And additions should be considered to be within the scope of the following claims.

1 is a schematic view of an anisotropic conductive adhesive according to a first embodiment of the present invention,

Figure 2a is a cross-sectional view of the conductive particles according to the first embodiment of the present invention,

Figure 2b is a cross-sectional view of the conductive particles according to the second embodiment of the present invention,

Figure 2c is a cross-sectional view of the conductive particles according to the third embodiment of the present invention,

3A is a cross-sectional view of a conductive particle according to a fourth embodiment of the present invention;

3B is a cross-sectional view of a conductive particle according to a fifth embodiment of the present invention;

3C is a cross-sectional view of a conductive particle according to a sixth embodiment of the present invention;

4 is a schematic view of an anisotropic conductive adhesive according to a second embodiment of the present invention,

5 is a schematic view of an anisotropic conductive adhesive according to a third embodiment of the present invention,

6 is a schematic view of an anisotropic conductive adhesive according to a fourth embodiment of the present invention,

7 is a schematic view of an anisotropic conductive adhesive according to a fifth embodiment of the present invention,

8 is a bonding diagram in which an anisotropic conductive adhesive is disposed between a substrate and a semiconductor chip according to an embodiment of the present invention;

9 is a final bonding diagram in which a solder region is formed between a substrate and an electrode pad of a semiconductor chip by heating / pressurizing according to an embodiment of the present invention;

10 is an enlarged view of portion A of FIG. 9;

<< Description of Major Symbols in Drawings >>

10: adhesive insulating resin 20: insulating layer

30: conductive layer 100: conductive particles

101: nucleus 102: conductive surface

103: insulating film

Claims (18)

Conductive particles including a nucleus having a conductive surface and an insulating film formed on the surface of the nucleus; Adhesive insulating resin whose curing is not completed at the melting point of the conductive surface; And Anisotropic conductive adhesive comprising heat-dissipating particles that do not melt at a temperature at which the curing of the adhesive insulating resin is completed. The method of claim 1, The nucleus is an anisotropic conductive adhesive, characterized in that any one or more of resin particles, meltable metals and alloys, low melting point metals and alloys or mixtures thereof. The method of claim 1, The conductive surface may be at least one selected from the group consisting of Sn-37Pb, 43Sn-57Bi, 48Sn-52In, 42-44In-14Cd, Sn-3.5Ag, Sn-2.5Ag-10Sb, Sn-4.7Ag-1.7Cu, and the like. Anisotropic conductive adhesive characterized by the above-mentioned. The method of claim 1, Particles are contained in the insulating film, the hardness of the fine particles is anisotropic conductive adhesive, characterized in that greater than the hardness of the insulating film. 5. The method of claim 4, The fine particles are anisotropic conductive adhesive, characterized in that the heat radiation particles. The method of claim 1, The heat dissipation particle is an anisotropic conductive adhesive, characterized in that the average diameter is 1/2 or less at 1/10 or more of the conductive particle diameter and different in size. The method of claim 1, The heat-dissipating particles are anisotropic conductive adhesive, characterized in that at least one selected from the group consisting of conductive gold, silver, copper, tungsten, carbon nanotubes (CNT) and mixtures thereof. The method of claim 1, The heat-dissipating particles are one or more selected from the group consisting of Teflon, polyethylene, alumina, silica, glass, silicon carbide and mixtures thereof, and the like. The method of claim 8, The heat dissipation particles are anisotropic conductive adhesive, characterized in that contained in a volume ratio of 3% to 50% with respect to the adhesive insulating resin. The method according to any one of claims 1 to 9, Anisotropic conductive adhesive, characterized in that the paste form. The method according to any one of claims 1 to 9, Anisotropic conductive adhesive, characterized in that the film form. A conductive layer comprising a conductive body including a nucleus having a conductive surface and an insulating film coated on the surface of the nucleus, and an adhesive insulating resin that hardening is not completed at the melting point of the conductive surface; And And an insulating layer comprising an adhesive insulating resin that hardening is not completed at the melting point of the conductive surface. An anisotropic conductive adhesive comprising heat-dissipating particles that do not melt at a temperature at which curing of the adhesive insulating resin is completed, in at least one of the conductive layer and the insulating layer. The method of claim 12, Anisotropic conductive adhesive, characterized in that the conductive layer and the insulating layer are alternately laminated. Conductive particles comprising a nucleus having a conductive surface between the semiconductor chip and the circuit board and an insulating film formed on the surface of the nucleus, an adhesive insulating resin that hardening is not completed at a melting temperature of the conductive surface, and the adhesive insulating resin Disposing an anisotropic conductive adhesive comprising heat dissipating particles that do not melt at a temperature at which curing of the resin is completed; Heating / pressing the anisotropic conductive adhesive higher than the conductive surface melting point of the nucleus body and heating to a temperature at which curing of the adhesive insulating resin is not completed, and the insulating film of the conductive particles is destroyed; And And a curing step of curing the resin component. The method of claim 14, The size of the heat dissipation particles is a semiconductor mounting method, characterized in that less than the final junction distance of the substrate electrode and the semiconductor chip electrode. The method of claim 14, The heat dissipation particle is a semiconductor mounting method, characterized in that at least one selected from the group consisting of conductive gold, silver, copper, tungsten, carbon nanotubes (CNT) and mixtures thereof. The method of claim 14, The heat dissipation particle is a semiconductor mounting method, characterized in that at least one selected from the group consisting of Teflon, polyethylene, alumina, silica, glass, silicon carbide and mixtures thereof. The method of claim 17, The heat dissipation particle is a semiconductor mounting method, characterized in that contained in a volume ratio of 3% to 50% with respect to the adhesive insulating resin.

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