TW558856B - Lithographic type microelectronic spring structures with improved contours - Google Patents

Lithographic type microelectronic spring structures with improved contours Download PDF

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Publication number
TW558856B
TW558856B TW90127775A TW90127775A TW558856B TW 558856 B TW558856 B TW 558856B TW 90127775 A TW90127775 A TW 90127775A TW 90127775 A TW90127775 A TW 90127775A TW 558856 B TW558856 B TW 558856B
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TW
Taiwan
Prior art keywords
microelectronic spring
scope
patent application
item
spring structure
Prior art date
Application number
TW90127775A
Other languages
Chinese (zh)
Inventor
Benjamin N Eldridge
Stuart W Wenzel
Original Assignee
Formfactor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/710,539 external-priority patent/US7189077B1/en
Application filed by Formfactor Inc filed Critical Formfactor Inc
Application granted granted Critical
Publication of TW558856B publication Critical patent/TW558856B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06727—Cantilever beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06738—Geometry aspects related to tip portion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/10—Plug-in assemblages of components, e.g. IC sockets
    • H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
    • H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
    • H05K7/1069—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting with spring contact pieces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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    • G01R1/0483—Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips
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    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/301—Electrical effects
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

Improved lithographic type microelectronic spring structures and methods are disclosed, for providing improved tip height over a substrate, an improved elastic range, increased strength and reliability, and increased spring rates. The improved structures are suitable for being formed from a single integrated layer (or series of layers) deposited over a molded sacrificial substrate, thus avoiding multiple stepped lithographic layers and reducing manufacturing costs. The present invention additionally provides a lithographic type spring contact that is corrugated to increase its effective length and elastic range and to reduce its footprint over a substrate, and springs which are contoured in plan view. The present invention further provides combination (both series and parallel) electrical contacts tips for lithographic type microelectronic spring structures. The microelectronic spring structures according to the present invention are particularly useful for making very fine pitch arrays of electrical connectors for use with integrated circuits and other substrate-mounted electronic devices.

Description

558856 Α8 Β8 C8 D8 六、申請專利範圍 ，其中該微電子彈簧結構在該尖端處於至少一方向具有每 微米至少三十微克的彈簧率。 1 7 ·如申請專利範圍第1 6項所述的微電子彈簧結 構，其中該微電子彈簧結構在該尖端處於至少一方向具有 在每微米大約3 0至6 0 0微克的範圍內的彈簧率。 1 8 ·如申請專利範圍第1項所述的微電子彈簧結構 ，其中該樑於長度方向被定型。 1 9 ·如申請專利範圍第1項所述的微電子彈簧結構 ，其中該樑於寬度方向被定型。 2 0 .如申請專利範圍第1項所述的微電子彈簧結構 ，其中該樑的截面爲V形。 2 1 .如申請專利範圍第1項所述的微電子彈簧結構 ，其中該樑的截面爲U形。 2 2 .如申請專利範圍第1項所述的微電子彈簧結構 ，其中該樑於長度方向爲S形。 2 3 .如申請專利範圍第1項所述的微電子彈簧結構 ，其中該樑另外包含沿著長度方向設置的波紋。 2 4 .如申請專利範圍第2項所述的微電子彈簧結構 ，其中該樑在長度方向的剖面圖中具有連接於該底座的一 階梯狀部份。 2 5 ·如申請專利範圍第2 4項所述的微電子彈簧結 構，其中該樑的該階梯狀部份在該基板表面上具有在該尖 端的未負荷高度的大約5 %至2 0 %的範圍內的階梯高度 〇 __ ———————————————————— 本紙張尺度適用中國國家標準（CNS ) Μ規格（210X297公釐） -3 _ (請先聞讀背面之注意事項再填寫本頁) 、tr 經濟部智慧財產局員工消費合作社印製 558856 A8 B8 C8 D8 六、申請專利範圍 2 6 ·如申請專利範圍第2 5項所述的微電子彈簧結 構’其中該樑的該階梯狀部份在該基板表面上具有該尖端 的未負荷高度的大約1 0 %的階梯高度。 2 7 ·如申請專利範圍第1項所述的微電子彈簧結構 ’其中該樑另外包含延伸遍及該樑的至少一部份的多個長 度方向肋。 2 8 ·如申請專利範圍第1項所述的微電子彈簧結構 ’其中該樑另外包含延伸遍及該樑的至少一部份的一長度 方向肋。 2 9 .如申請專利範圍第2 8項所述的微電子彈簧結 構’其中該樑具有連接於該底座的一階梯狀部份，並且該 長度方向肋延伸至該階梯狀部份。 3 0 .如申請專利範圍第2 8項所述的微電子彈簧結 構’其中該長度方向肋延伸至該底座內。 3 1 ·如申請專利範圍第2 8項所述的微電子彈簧結 構’其中該長度方向肋包含一長度方向槽道。 3 2 .如申請專利範圍第2 8項所述的微電子彈簧結 構，其中該長度方向槽道具有規則幾何截面形狀。 3 3 ·如申請專利範圍第3 2項所述的微電子彈簧結 構’其中該規則幾何截面形狀另外包含選擇自由部份矩形 ’部份梯形，部份三角形，及部份圓形形狀所組成的群類 的形狀。 3 4 .如申請專利範圍第2 8項所述的微電子彈簧結 構，其中該長度方向肋的截面尺寸於其長度上不同。 本紙浪尺度適用中國國家標準（CNS ) a4規格（210X297公羡1 (請先閲讀背面之注意事項再填寫本頁) 訂· 經濟部智慧財產局員工消費合作社印製 558856 A8558856 Α8 Β8 C8 D8 6. The scope of patent application, wherein the microelectronic spring structure has a spring rate of at least thirty micrograms per micrometer at the tip in at least one direction. 17 · The microelectronic spring structure according to item 16 of the patent application scope, wherein the microelectronic spring structure has a spring rate in a range of about 30 to 600 micrograms per micrometer at at least one direction of the tip. . 1 8 · The microelectronic spring structure described in item 1 of the scope of patent application, wherein the beam is shaped in the length direction. 19 · The microelectronic spring structure described in item 1 of the scope of patent application, wherein the beam is shaped in the width direction. 20. The microelectronic spring structure according to item 1 of the scope of patent application, wherein the cross section of the beam is V-shaped. 2 1. The microelectronic spring structure according to item 1 of the scope of patent application, wherein the cross section of the beam is U-shaped. 2 2. The microelectronic spring structure according to item 1 of the scope of patent application, wherein the beam is S-shaped in the length direction. 2 3. The microelectronic spring structure according to item 1 of the scope of patent application, wherein the beam further comprises a corrugation provided along the length direction. 24. The microelectronic spring structure according to item 2 of the scope of patent application, wherein the beam has a stepped portion connected to the base in a cross-sectional view in the length direction. 2 5 · The microelectronic spring structure according to item 24 of the scope of patent application, wherein the stepped portion of the beam has about 5 to 20% of the unloaded height of the tip on the surface of the substrate. Step height within the range 0__ ———————————————————————————————————————————————————————————————————————————— This paper size is applicable to China National Standard (CNS) M specifications (210X297 mm) -3 _ (Please First read the notes on the back before filling out this page), tr Printed by the Intellectual Property Bureau of the Ministry of Economy, Employees' Cooperatives, 558856 A8 B8 C8 D8 VI. Patent application scope 2 6 · Microelectronics as described in item 25 of the patent application scope Spring structure 'wherein the stepped portion of the beam has a step height of about 10% of the unloaded height of the tip on the surface of the substrate. 2 7 The microelectronic spring structure according to item 1 of the scope of the patent application, wherein the beam further includes a plurality of lengthwise ribs extending across at least a portion of the beam. 2 8 · The microelectronic spring structure according to item 1 of the scope of the patent application ′, wherein the beam further includes a lengthwise rib extending across at least a portion of the beam. 29. The microelectronic spring structure according to item 28 of the scope of patent application, wherein the beam has a stepped portion connected to the base, and the lengthwise rib extends to the stepped portion. 30. The microelectronic spring structure according to item 28 of the scope of patent application, wherein the lengthwise rib extends into the base. 3 1 The microelectronic spring structure according to item 28 of the scope of patent application, wherein the longitudinal rib includes a longitudinal groove. 32. The microelectronic spring structure according to item 28 of the scope of patent application, wherein the longitudinal direction channel has a regular geometric cross-sectional shape. 3 3 · The microelectronic spring structure described in item 32 of the scope of the patent application 'wherein the regular geometric cross-sectional shape additionally includes the selection of a free part of a rectangle', a part of a trapezoid, a part of a triangle, and a part of a circle Swarm shape. 34. The microelectronic spring structure according to item 28 of the scope of patent application, wherein the cross-sectional size of the longitudinal rib is different in length. This paper scale is applicable to China National Standard (CNS) a4 specifications (210X297 public envy 1 (please read the precautions on the back before filling out this page). Order · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 558856 A8

BS C8 D8 六、申請專利範圍 3 5 .如申請專利範圍第2 8項所述的微電子彈簧結 構，其中該肋包含該樑的一折疊部份。 3 6 .如申請專利範圍第1項所述的微電子彈簧結構 ，其中該樑具有沿著長度方向的多個肋，該多個肋具有從 在該底座處的第一尺寸成推拔狀至在該尖端處的第二尺寸 的高度，並且該第一尺寸大於該第二尺寸。 3 7 .如申請專利範圍第2項所述的微電子彈簧結構 ，其中該彈簧結構包含一彈性材料薄材，當從該彈簧結構 上方於垂直於該基板的方向觀看時，該薄材無任何重疊部 份。 3 8 ·如申請專利範圍第3 7項所述的微電子彈簧結 構，其中該彈性材料薄材包含具有均勻厚度的一均質層。 3 9 ·如申請專利範圍第3 7項所述的微電子彈簧結 構，其中該彈性材料薄材於其至少一部份被定型。 4 0 ·如申請專利範圍第2項所述的微電子彈簧結構 ，其中當於垂直於該基板表面的方向觀看時，該樑成推拔 狀成爲具有三角形形狀。 4 1 ·如申請專利範圍第2項所述的微電子彈簧結構 ，其中當於垂直於該基板表面的方向觀看時，該樑具有矩 形形狀。 4 2 .如申請專利範圍第2項所述的微電子彈簧結構 ，其中當於垂直於該基板表面的方向觀看時，該樑相對於 一*中心軸線具有偏移。 4 3 .如申請專利範圍第2項所述的微電子彈簧結構 本紙張尺度適用中國國家標準（CNS ) A4規秸:（210X297公釐） :5 - (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 558856 A8 B8 C8 D8 六、申請專利範圍 (請先聞讀背面之注意事項再填寫本頁) ，其中當於垂直於該基板表面的方向觀看時，該樑被定型 成使得該尖端被定位在離開該底座比該底座與該尖端之間 的該樑的整體長度小的距離處。 4 4 ·如申請專利範圍第2項所述的微電子彈簧結構 ，其中當於垂直於該基板表面的方向觀看時，該樑爲蛇形 〇 4 5 ·如申請專利範圍第2項所述的微電子彈簧結構 ，其中當於垂直於該基板表面的方向觀看時，該樑爲C形 〇 4 6 ·如申請專利範圍第4 3項所述的微電子彈簧結 構，其中該樑的一部份包含至少二平行臂。 4 7 ·如申請專利範圍第1項所述的微電子彈簧結構 ，其中該彈性材料包含金屬材料。 經濟部智慧財產局員工消費合作社印製 4 8 ·如申請專利範圍第4 7項所述的微電子彈簧結 構，其中該金屬材料包含選擇自由鎳及其合金；銅，鈷， 及鐵，以及其合金；金及銀；鉑族的元素；貴重金屬；半 貴重金屬及其合金，特別是鈀族的元素及其合金；耐火金 屬及其合金，特別是鎢及鉬及其合金；及錫，鉛，鉍，銦 ，及鎵，以及其合金所組成的群類的材料。 4 9 .如申請專利範圍第1項所述的微電子彈簧結構 ，其中該彈性材料包含一導電材料與一絕緣材料的疊層。 5 0 ·如申請專利範圍第1項所述的微電子彈簧結構 ，其中該彈性材料包含一導電種子材料層及一電鍍金屬材 料層。 ϋ張财關家標準（CNS ) ( 21GX297公嫠 j 558856 A8 B8 C8 D8 、申請專利範圍 5 1 ·如申請.專利範圍第5 0項所述的微電子彈簧結 構，其中該種子材料包含由選擇自由鈦，鉻，金，銅’鈀 ，鎢，及銀，以及其合金所組成的群類的一或多種金屬構 成的層。 5 2 ·如申請專利範圍第5 0項所述的微電子彈簧結 構，其中該導電種子材料層包含A u，並且具有在大約 1 0 0至1 0 0 0埃的範圍內的厚度。 5 3 ·如申請專利範圍第5 0項所述的微電子彈簧結 構，其中該種子材料層包含T i - W合金，並且具有在大 約1 0 0至1 0 0 0埃的範圍內的厚度。 5 4 ·如申請專利範圍第5 0項所述的微電子彈簧結 構，其中該種子材料層包含C u，並且具有在大約 1 0 0 0至3 0 0 0埃的範圍內的厚度。 5 5 ·如申請專利範圍第2項所述的微電子彈簧結構 ’其中該底座以導電關係被固定於在該基板的一觸點結構 5 6 ·如申請專利範圍第5 5項所述的微電子彈簧結 構，其中在該基板的該觸點結構的至少一部份被一導電層 覆蓋。 5 7 ·如申請專利範圍第2項所述的微電子彈簧結構 ，其中該基板在該表面處的.至少一部份具有導電性。 5 8 ·如申請專利範圍第2項所述的微電子彈簧結構 ，其中該基板表面包含由一導電層構成的表面。 5 9 .如申請專利範圍第5 8項所述的微電子彈賛，結 (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 558856 Α8 Β8 C8 D8 六、申請專利範圍 構，其中該導電層包含T i - W合金。 (請先閲讀背面之注意Ϋ項再填寫本頁} 6 0 ·如申請專利範圍第5 8項所述的微電子彈簧結 構，其中該導電層包含一雙層結構，其包含由C r構成的 第一層及由Au構成的第二層。 6 1 ·如申請專利範圍第5 8項所述的微電子彈簧結 構，其中該導電層包含一雙層結構，其包含由T i構成的 第一層及由A u構成的第二層。 6 2 .如申請專利範圍第5 8項所述的微電子彈簧結 構，其中該導電·層具有在大約3 0 0 0至6 0 〇 〇埃的範 圍內的厚度。 6 3 ·如申請專利範圍第5 8項所述的微電子彈簧結 構，其中該導電層具有大約4 5 0 0埃的厚度。 6 4 ·如申請專利範圍第1項所述的微電子彈簧結構 ，另外包含一導電尖端總成，該導電尖端總成包含選擇自 由尖頭尖端，鍬形尖端，球形尖端，金字塔形尖端，平坦 尖端，及圓形尖端所組成的群類的多個導電尖端。 經濟部智慧財產局員工消費合作社印製 6 5 · —種導電尖端總成，用於一微電子彈簧結構， 該導電尖端總成包含選擇自由尖頭尖端，鍬形尖端，球形 尖端，金字塔形尖端，平坦尖端，及圓形尖端所組成的群 類的多個導電尖端。 6 6 ·如申請專利範圍第6 5項所述的導電尖端總成 ’其中該多個導電尖端的至少兩個連接於微電子彈簧結構 的分開的臂。 6 7 ·如申請專利範圍第6 5項所述的導電尖端總成 本&張尺度適用中國國家襟準（CNS ) A4规^ ( 210X297公着) Γ8^ " 558856 A8 B8 C8 _______— 六、申請專利範圍 ，其中該多個導電尖端的至少兩個在微電子彈簧結構的— 單一臂上互相連接。 6 8 .如申請專利範圍第1項所述的微電子彈簧結構 ，另外包含一第二樑及一第二底座，該第二樑由該彈性材 料成整體地形成，其中該第二樑在該樑的該第二端部處連 接於該樑。 6 9 .如申請專利範圍第1項所述的微電子彈簧結構 ，另外包含一第二樑，其中該第二樑與由該彈性材料形成 的該底座成整體地形成，且在一第一端部處連接於該底座 ;及被定位在相反於該底座的該第二樑的一第二端部處的 一第二尖端。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 準 標 家 國 國 中 用 適 公 97 2BS C8 D8 6. Scope of patent application 35. The microelectronic spring structure according to item 28 of the scope of patent application, wherein the rib includes a folded portion of the beam. 36. The microelectronic spring structure according to item 1 of the scope of patent application, wherein the beam has a plurality of ribs along the length direction, and the plurality of ribs have a pushing shape from a first dimension at the base to The height of the second dimension at the tip, and the first dimension is larger than the second dimension. 37. The microelectronic spring structure according to item 2 of the scope of patent application, wherein the spring structure includes a thin material of elastic material, and when viewed from above the spring structure in a direction perpendicular to the substrate, the thin material does not have any Overlapping parts. 38. The microelectronic spring structure according to item 37 of the scope of patent application, wherein the thin elastic material comprises a homogeneous layer having a uniform thickness. 39. The microelectronic spring structure according to item 37 of the scope of patent application, wherein the thin sheet of elastic material is shaped at least in part. 40. The microelectronic spring structure according to item 2 of the scope of patent application, wherein the beam is pushed into a triangular shape when viewed in a direction perpendicular to the surface of the substrate. 4 1 The microelectronic spring structure according to item 2 of the scope of patent application, wherein the beam has a rectangular shape when viewed in a direction perpendicular to the surface of the substrate. 42. The microelectronic spring structure according to item 2 of the scope of patent application, wherein the beam has an offset with respect to a * center axis when viewed in a direction perpendicular to the surface of the substrate. 4 3. The microelectronic spring structure described in item 2 of the scope of the patent application. The paper size is applicable to Chinese National Standard (CNS) A4: (210X297 mm): 5-(Please read the precautions on the back before filling in this Page) Order printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 558856 A8 B8 C8 D8 6. Scope of patent application (please read the precautions on the back before filling this page), where when viewed in a direction perpendicular to the surface of the substrate The beam is shaped such that the tip is positioned at a distance from the base that is smaller than the overall length of the beam between the base and the tip. 4 4 · The microelectronic spring structure according to item 2 of the scope of patent application, wherein the beam has a serpentine shape when viewed perpendicular to the substrate surface. Microelectronic spring structure, in which the beam is C-shaped when viewed in a direction perpendicular to the surface of the substrate. The microelectronic spring structure described in item 43 of the patent application scope, wherein a part of the beam Contains at least two parallel arms. 4 7 · The microelectronic spring structure according to item 1 of the scope of patent application, wherein the elastic material comprises a metal material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 8 · The microelectronic spring structure described in item 47 of the scope of patent application, wherein the metallic material includes the choice of free nickel and its alloys; copper, cobalt, and iron, and other Alloys; gold and silver; elements of the platinum group; precious metals; semi-precious metals and their alloys, especially those of the palladium group and their alloys; refractory metals and their alloys, especially tungsten and molybdenum and their alloys; , Bismuth, indium, and gallium, and its group of alloys. 49. The microelectronic spring structure according to item 1 of the scope of patent application, wherein the elastic material comprises a stack of a conductive material and an insulating material. 50. The microelectronic spring structure according to item 1 of the scope of patent application, wherein the elastic material includes a conductive seed material layer and a plated metal material layer.财 张 财 关 家 标准 (CNS) (21GX297 public 嫠 j 558856 A8 B8 C8 D8, patent application scope 5 1 · as applied. Patent scope of the microelectronic spring structure described in item 50, wherein the seed material contains Free titanium, chromium, gold, copper, palladium, tungsten, and silver, as well as a group of one or more metals composed of alloys. 5 2 · Microelectronic spring as described in item 50 of the scope of patent application Structure, wherein the conductive seed material layer contains Au and has a thickness in a range of about 100 to 100 angstroms. 5 3 · The microelectronic spring structure according to item 50 of the scope of patent application, Wherein the seed material layer contains a Ti-W alloy and has a thickness in the range of about 100 to 100 angstroms. 5 4 · The microelectronic spring structure according to item 50 of the scope of patent application, Wherein the seed material layer contains Cu and has a thickness in the range of about 100 to 300 Angstroms. 5 5 The microelectronic spring structure according to item 2 of the scope of patent application 'wherein the base A contact structure fixed to the substrate in a conductive relationship 5 6 The microelectronic spring structure according to item 55 of the patent scope, wherein at least a part of the contact structure of the substrate is covered with a conductive layer. 5 7 · The microelectronic according to item 2 of the patent scope A spring structure in which at least a portion of the substrate is conductive at the surface. 5 8 The microelectronic spring structure according to item 2 of the patent application scope, wherein the substrate surface includes a surface composed of a conductive layer 5 9. As the microelectronics bulletin mentioned in item 58 of the scope of patent application, please conclude (please read the precautions on the back before filling this page). Order printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 558856 Α8 Β8 C8 D8 6. The scope of the patent application, where the conductive layer contains T i-W alloy. (Please read the note on the back before filling out this page} 6 0 · The microelectronic spring structure described in item 58 of the scope of patent application , Wherein the conductive layer includes a double-layer structure, which includes a first layer composed of C r and a second layer composed of Au. 6 1 · The microelectronic spring structure according to item 58 of the scope of patent application, wherein The conductive layer includes a double layer The structure includes a first layer composed of T i and a second layer composed of Au. 6 2. The microelectronic spring structure according to item 58 of the patent application scope, wherein the conductive · layer has a thickness of about 3 A thickness in the range of 0 to 600 angstroms. 6 3 The microelectronic spring structure according to item 58 of the patent application scope, wherein the conductive layer has a thickness of about 4 500 angstroms. 6 4 The microelectronic spring structure according to item 1 of the scope of the patent application, further comprising a conductive tip assembly, the conductive tip assembly including a selection of a free tip, a spade tip, a spherical tip, a pyramid tip, a flat tip, and Multiple conductive tips of a group of round tips. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 5-a conductive tip assembly for a microelectronic spring structure, the conductive tip assembly includes a choice of free tip, spade tip, spherical tip, pyramid tip, A plurality of conductive tips of a group consisting of a flat tip and a round tip. 6 6-The conductive tip assembly according to item 65 of the scope of patent application, wherein at least two of the plurality of conductive tips are connected to separate arms of a microelectronic spring structure. 6 7 · The total cost of the conductive tip as described in Item 6 and 5 of the scope of patent application & Zhang scale is applicable to China National Standard (CNS) A4 ^ (210X297) Γ8 ^ " 558856 A8 B8 C8 _______— The scope of the patent application, wherein at least two of the plurality of conductive tips are interconnected on a single arm of the microelectronic spring structure. 68. The microelectronic spring structure according to item 1 of the scope of patent application, further comprising a second beam and a second base, the second beam is integrally formed of the elastic material, wherein the second beam is in the The second end of the beam is connected to the beam. 69. The microelectronic spring structure according to item 1 of the scope of patent application, further comprising a second beam, wherein the second beam is integrally formed with the base formed of the elastic material, and at a first end Connected to the base in sections; and a second tip positioned at a second end of the second beam opposite the base. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

TW90127775A 2000-11-09 2001-11-08 Lithographic type microelectronic spring structures with improved contours TW558856B (en)

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