TW558765B - Integrated post-etch treatment for dielectric etch process - Google Patents

Integrated post-etch treatment for dielectric etch process Download PDF

Info

Publication number
TW558765B
TW558765B TW89108330A TW89108330A TW558765B TW 558765 B TW558765 B TW 558765B TW 89108330 A TW89108330 A TW 89108330A TW 89108330 A TW89108330 A TW 89108330A TW 558765 B TW558765 B TW 558765B
Authority
TW
Taiwan
Prior art keywords
layer
dielectric
post
gas
semiconductor structure
Prior art date
Application number
TW89108330A
Other languages
English (en)
Chinese (zh)
Inventor
Yang-Huei Ou
Jr-Ping Yang
Lin Ye
Robert Wu
Jr-Bang Chen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/320,251 external-priority patent/US6379574B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW558765B publication Critical patent/TW558765B/zh

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW89108330A 1999-05-03 2000-05-16 Integrated post-etch treatment for dielectric etch process TW558765B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30444999A 1999-05-03 1999-05-03
US09/320,251 US6379574B1 (en) 1999-05-03 1999-05-26 Integrated post-etch treatment for a dielectric etch process

Publications (1)

Publication Number Publication Date
TW558765B true TW558765B (en) 2003-10-21

Family

ID=26974028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89108330A TW558765B (en) 1999-05-03 2000-05-16 Integrated post-etch treatment for dielectric etch process

Country Status (2)

Country Link
JP (1) JP2001007094A (ja)
TW (1) TW558765B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9126229B2 (en) 2011-05-11 2015-09-08 Tokyo Electron Limited Deposit removal method
US9177816B2 (en) 2011-09-29 2015-11-03 Tokyo Electron Limited Deposit removal method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169440B2 (en) * 2002-04-16 2007-01-30 Tokyo Electron Limited Method for removing photoresist and etch residues
JP2006286802A (ja) * 2005-03-31 2006-10-19 Fujitsu Ltd 埋込配線の形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9126229B2 (en) 2011-05-11 2015-09-08 Tokyo Electron Limited Deposit removal method
US9177816B2 (en) 2011-09-29 2015-11-03 Tokyo Electron Limited Deposit removal method

Also Published As

Publication number Publication date
JP2001007094A (ja) 2001-01-12

Similar Documents

Publication Publication Date Title
TW578235B (en) Post-etch treatment for a dielectric etch process
US5399237A (en) Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US6583065B1 (en) Sidewall polymer forming gas additives for etching processes
TWI375269B (en) Method for providing uniform removal of organic material
US7413990B2 (en) Method of fabricating a dual damascene interconnect structure
JP6049871B2 (ja) エッチング及びアッシング中での低誘電率材料の側壁保護
US6380096B2 (en) In-situ integrated oxide etch process particularly useful for copper dual damascene
US7981812B2 (en) Methods for forming ultra thin structures on a substrate
US6777342B2 (en) Method of plasma etching platinum
US20070026665A1 (en) Method of fabricating a dual damascene interconnect structure
KR19980080224A (ko) 에칭되는 백금으로부터 재증착된 베일을 제거하기 위한 방법
US6943039B2 (en) Method of etching ferroelectric layers
JP4451934B2 (ja) 導電層をエッチングする方法及び集積回路
JP4638030B2 (ja) セルフアライメントコンタクトホールを形成するためのエッチング方法
JP7556099B2 (ja) プラズマ処理装置
TW201001527A (en) Method and apparatus for removing polymer from a substrate
JP2002520848A (ja) ２ステップ自己整合コンタクトエッチング
TW479291B (en) Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition
JP2002134611A (ja) 半導体装置の製造方法
TW558765B (en) Integrated post-etch treatment for dielectric etch process
TW200303053A (en) A high selectivity and residue free process for metal on thin dielectric gate etch application
JP2007508698A (ja) 有機ケイ酸塩ガラスについての一酸化二窒素剥脱方法
JP2007508697A (ja) 一酸化二窒素を使用したエッチバック方法
JP7467708B2 (ja) 基板処理装置
TW463260B (en) An improved method for etching TiN and SiO2 materials at the same rate

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees