TW544742B - Semiconductor device and method of production of same - Google Patents

Semiconductor device and method of production of same Download PDF

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Publication number
TW544742B
TW544742B TW091110671A TW91110671A TW544742B TW 544742 B TW544742 B TW 544742B TW 091110671 A TW091110671 A TW 091110671A TW 91110671 A TW91110671 A TW 91110671A TW 544742 B TW544742 B TW 544742B
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TW
Taiwan
Prior art keywords
external connection
semiconductor
semiconductor device
wires
connection terminals
Prior art date
Application number
TW091110671A
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English (en)
Inventor
Eiji Takaike
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Shinko Electric Ind Co
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Publication of TW544742B publication Critical patent/TW544742B/zh

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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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544742 A7 ^--B7___ 五、發明説明（1 ) 發明背景 1·發明領域 本發明關於半導體元件和其製造方法，特別是關於藉 由在半導體晶圓的電極形成表面上形成外部連接端子而製 造出半導體元件和其製造方法。 2·相關技術說明 第12A至121圖顯示半導體元件的製造方法，該半導體 疋件在半導體晶圓的電極形成表面上形成有金屬柱作為外 部連接端子。在此製造方法中，首先，電極12被暴露出， 且半導體晶圓10中被鈍化膜14覆蓋的半導體晶圓1〇的電極 形成表面（第12Α圖），以喷鍍方式被覆蓋有導電層16(第12β 圖）。接著，導電層16的表面被光敏電阻18覆蓋（第12C圖）， 然後，光敏電阻18被曝光和顯影，以便暴露出用以在導電 層16表面形成互接圖案的部份（第12D圖）。 電極12以極高密度被排列在例如半導體晶圓1〇的電 極形成表面的周緣。如第12E圖所示，藉由以銅電鍍導電 層16的暴露表面，來形成互接圖案20。互接圖案20從電極 12被引出而形成，以便確保外部連接端子的配置空間。 接著，光敏電阻18被移除且互接圖案20和導電層16的 表面用乾燥膜22覆蓋（第12F圖）。此乾燥膜22用來形成銅柱 24，該銅柱形成外部連接端子（第12G圖）。乾燥膜22被曝光 和顯影’以形成孔洞，用以在互接圖案2〇上形成銅柱24的 部份進行電鍍。藉由以銅電鍍這些部位，銅積聚在電鍍孔， 而形成向度約為1 〇〇 # m的金屬柱24。 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 4 (請先閱讀背面之注意事項再填寫本頁) 、? 544742 A7 —---------— B7 五、發明説明（2 ) ^^ --一~〜 接著，銅柱24的表面被依序電錢祕、把等，以形 障礙層26。 乾燥膜22被移除，然後導電層16中暴露於電極形成表 面的部份’藉敍刻而移除（第12H圖）。以此方式，半導體晶 圓1〇的電極形成表面被形成有銅柱24，銅柱24透過互接: 案2 0與電極12電性連接。 ° 、接著，如第121圖所示，半導體晶圓10的電極形成表面 被覆蓋有樹脂28進行密封。樹脂28被形成為大致相同於鋼 柱24的厚度。銅柱24的端表面被暴露於樹脂以表面。在樹 脂密封之後，焊球被放置於障礙層26表面，且焊料被做成 可逆流，以便形成焊料突起（未顯示）。最後，半導體晶圓 10可被沿著樹脂28切成小方塊，以得到晶片尺寸的半導體 元件。 丑 第13A至131圖顯示用來製造晶片尺寸的半導體元件 的另一方法。由此製造方法得到的半導體元件具有用來作 為外部連接端子之彎曲成L形的金線。第13A至UE圖所示 步驟基本上與上述第12A至12E圖所示步驟沒有不同。然 而，在此方法中，互接圖案20未被樹脂密封。互接圖案2〇 藉金鍍層而形成，以便使互接圖案能夠被維持在半導體元 件的外部表面暴露出。 如第13F圖所示，光敏電阻18(第13]£圖）被移除。接著， 如第13G圖所示，電極形成表面被電阻所覆蓋，然後，孔 3〇a形成於互接圖案20中，在之後金線連結的部份。電極形 成表面被電阻30覆蓋，以便在連結金線之後用強化鍍層只 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐）
»· ·', (請先閱讀背面之注意事^再填寫本頁) 、!· 544742 五、發明説明（ 覆蓋住金線外表面。如第13H圖所示，金線被連結到互接 圖案20與開口 3〇a對齊（第13G圖）。接著，金線被彎成L形， 且其端部被切掉，以形成外部連接端子32。金線的外表面 被電鍍，以便強化金線（鍍層材料未顯示於圖中），然後， 電阻30被移除，且如第131圖所示，導電層16的暴露部份藉 姓刻而移除。 以此方式，半導體晶圓10的電極形成表面被形成有外 部連接端子32，其透過互接圖案2〇被電性連接到電極12。 最後，半導體晶圓10被切割成小方塊，以便得到被提供有 外部連接端子32的半導體元件，該外部連接端子係由彎成 L形的導線所構成。 在上述第12A至121圖以及第13A至131圖所示的例子 二導電層16被形成於鈍化膜14上，但是亦可能以聚醯亞 胺膜來覆蓋鈍化膜14，並在聚醯亞胺膜表面上形成導電層 16。 a 一用以利用上述銅柱作為外部連接端子的製造半導體 元件的步驟’以及利用彎成㈣的金線作為外部連接端子 的製造半導體元件的步驟被顯示於第⑷小圖。該等步 製造晶片尺寸的半導體元件，其係藉由加工半導體晶圓 形成電性連接於形成於其上的電極端子的外部連接端子 然後切割該半導體晶圓而達成。以此方式，習知技術的々 法利用複雜的步驟，所以問題在於製造效率降低且製造成 本增加。 而且，當將以習知技術的製造方法製出的半導體元件
本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公D 6 驟 以 方
—--------— (請先閱讀背面之注意事項再填寫本頁) •、可I 544742 五、發明説明（4 ) =::Γ時，已有的下述問題在於:當將-使用銅柱 2外錢接端子的半導體^件以料安裝時，焊料不會 m:且外部連接端子不會可靠地連結於電路板。 件，其中該半導體元件被提供有藉彎曲 孟線駐形而形成外部連接端子時，部份由於外部連接端 子的高度約為700至綱㈣，所以半導體元件和電路板被 互相隔開地連結著。 本發明之總結 本發明用來解決習知技術中，藉加工半導體晶圓來製 ，半導體元件的製造方法中的問題。本發明之一目的在於 提供相當可靠的半導體元件，能夠藉較簡單方法來製出， 因而能夠提高製造效率，且能夠以較高密度配置外部連接 端子，因而能夠處理較多數目的銷，及其製造方法。 奴達成上述目的，根據本發明之一態樣，提供一種半 導體元件，其被提供有形成於半導體基體上的諸如電晶體 的半‘體組件’將该等組件連接到一外部電路的外部連接 端子’及將該等半導體組件的電極連接到該等外部連接端 子的互接圖案，其中該等外部連接端子係由含有導電材料 的導線所形成，而且該等導線之連結於該等互接圖案的部 份，被埋在形成該等互接圖案的該金屬層中。 形成互接圖案的金屬層較佳地被銅鍍層、金鍍層之類 形成。 ^ 作為形成外部連接端子的導電材料的導線，較佳的是 使用金線、銅線等。 本紙張尺度適用中國國家標準（CNS) A4規格（21〇x297公爱） 544742 五 發明說明 車父佳地’金屬層和導線由相同材料製造出。所以，較 也二金屬層藉金制而形成，且導線由金構成，或者金 •層藉鋼鍍層而’形成，導線由銅構成。 〆 覆蓋外部連接端子可被形成互接圖案的金屬層的材料所 半導體元件中形成互接圖案的表面可被密封，以便留 下外部連接端子暴露出。 根據本發明之第二態樣，提供一種半導體元件製造方 …该半導體元件被提供有形m導體基體的半導體 、’且件’將該等組件連接到一外部電路的外部連接端子，及 將半導體組件的電極連接到外部連接端子的互接圖案，該 訂 方法包含的㈣為：在半導縣體切成電極的整個表面 成I電層’在V電層的表面上形成—電阻圖案，留 下導電層的某些部份暴露出’該等部份為外部連接端子將 破連接到塾的部份以及欲形成互接圖案的部份；將含有導 電材料的導線，在欲形成塾的部份連結到導電層，以便形 成外部連接端子；在導電層的暴露部份形成一金屬層；移 除該電阻；及移除因移除電阻而暴露出的導電層，以便形 成該等互接圖案。 的 在形成互接圖案之後，半導體元件中形成互接圖案 表面被密封，以便留下外部連接端子暴露出。 圖式簡要說明 圖 本發明的這些和其他目的及特徵，將由下述關於附 所給予的較佳實施例的說明而變得更清楚，其中： 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐) 五、發明説明（6 ) 丰導 丰V體7G件的製造方法的圖式； 丰導„為用來解釋根據本發明之第二實施例的 半V體7〇件的製造方法的圖式；
、第®為根據本發明之第一實施例的半導體元件的製 造方法的流程圖； X 第4圖為根據本發明的第二實施例的半導體元件的製 造方法的流程圖； ^ 第5圖為覆蓋著半導體晶圓的電極形成表面的光敏電 阻的姓刻狀態的平面圖； 第6圖為被切割成小方塊之前，用來形成較多數目的 半導體元件的半導體晶圓的圖式； 第7 A圖為使外部連接端子與根據本發明之半導體元 件的互接圖案連結的-部份的放大剖面圖，第则為^外 部連接端子與習知技術的半導體元件的互接㈣連結的一 部份的放大剖面圖； 第8A圖為使外部連接端子與根據本發明之另一半導 體元件的互接®案連結的-部份的放大剖㈣，第8b圖為 使外部連接端子與習知技術的另_半導體元件的互接圖案 連結的一部份的放大剖面圖； 第9A至9C圖為用來解釋將一銅線或金線連結到本發 明之導電層的圖式； 第10A圖為根據本發明安裝於一板上的半導體元件的 圖式，而第10B圖為安裝於一板上的習知技術的半導體元 544742 A7 —_____________ 五、發明説明（7 ) 件的圖式； 第11A圖為安裝於一板上之根據本發明之另一半導體 元件的圖式，而第11B圖為安裝於一板上之習知技術之另 一半導體元件的圖式； 第12A至121圖為解釋習知技術之半導體元件的製造 方法的圖式； 第13A至131圖為解釋習知技術之半導體元件的另一 製造方法的圖式； 第14圖為第12 A至121圖所示之習知技術的半導體元 件的製造方法的流程圖；及 第15圖為13A至131圖所示之習知技術的半導體元件 的製造方法的流程圖。 較佳實施例之說.明 本發明之較佳實施例將同時參考附圖於下面詳細說 明。 第1A至II圖為用來解釋根據本發明之第一實施例的 半導體元件的製造方法的圖式。 如第1A圖所示，半導體晶圓1〇中形成有電極12的表面 被覆蓋有純化膜Η，而留下電極12暴露出。在此實施例的 半導體元件的製造方法中，導電層16被形成於半導體晶圓 10的電極形成表面上(第1BSI)。在本實施例中，藉喷鍍形 成鉻層，然後藉喷鍍形成銅層，以得到導電層16。鈍化膜 14表面可形成有.聚醯亞胺’或其他絕緣層（未顯示）作為保 護膜，於是導電層16形成。 本紙張尺度適用中國國家標準（OJS) A4規格（210X297公楚） 10
訂· 广請先閲讀背而之法意事項存填寫本買) 544742 A7 五、發明説明（8 ) 接著，光敏電阻18被塗覆於半導體晶圓10的全部電極 形成表面，以便以光敏電阻18覆蓋導電層16表面（第… 圖）光敏電阻為了做圖案而被曝光和顯影，以便如第1 d 圖所示，造成只有用來形成互接圖案的部份暴露出，用以 在導電層16的表面重新佈線。 第5圖為半導體晶圓的一晶片區段在光敏電阻1 8被暴 光和顯影的狀態下的一平面圖。參考數字18代表覆蓋住半 導體晶圓ίο的電極形成表面的光敏電阻，16a代表根據互接 圖案的配置導電層16中被暴露的部份，16b代表形成在互接 圖案的端部的形成墊的部份，16c代表連接於電極12的互接 圖案的基部端的部份。 本實施例的半導體元件的製造方法之特徵在於如第 1E圖所示，在使光敏電㈣做圖案之後，藉由將銅線接合 到形成墊的部份l6b的方法，而形成外部連接端子別。在導 線接曰時，銅線尖端被融化成球狀，球狀部份與形成墊的 部份接合，然後，導線被上拉並切掉，因而形成外部連接 端子50，、而突出部5〇a由從球狀部份往上突出的導線形成。 以此方式’外部連接端子5〇形成於所有形成於電極形成表 面的形成墊的部份16b。 在此方法中，因為外部連接端子5〇由導線接合而形 成’所以此工作是極度有效率的。而且，外部連接端子50 y利用傳統的接合工具形成。而且，因為銅線尖端定形為 f狀’⑽導電層16接合，然後在上拉時被切斷以形成外 ' # 子5G ’所W不需要習知技術中使導線f成L形的 本紙張尺度適财關緖準
•訂— (請先閲讀背面之注意事項再填寫本頁) .41^, 五、發明説明（9 ) 刼作，外部連接端子5〇的尺寸和形狀被容易地保持一致， 且此工作可被有效率地進行。 接著，導電層16的暴露表面以銅電鍍，以形成第❶圖 所示的互接圖案52。此時，如圖所示，外部連接端子㈣ 表面亦被覆蓋有銅鑛層。接著，外部連接端子的表面和互 接圖案52的表面被電鍍，以防止安裝時焊料的擴散。在本 實施例中，他們被連續地以鎳、鈀和金電鍍。 接著，如第1G圖示，光敏電阻18(第117圖）從半導體晶 圓10的電極形成表面移走，然後導電層16的暴露部份被飯 刻掉（第1H圖）。厚度為(^至丨微米數量級的導電層16，被 形成為遠薄於形成互接圖案52的銅鍍層，該銅鍍層的厚度 為5至20微米數量級，所以導電層16可被輕易地移走，且用 來移走導電層16的餘刻實際上不會對互接圖案52有影響。 導電層16的暴露部份可被移走，而不會被電阻覆蓋互接圖 案52。因此，鈍化膜14被暴露出，而且互接圖案”變得獨 立。 接著，半導體晶圓丨〇的電極形成表面被樹脂密封，以 便用树月曰28饮封互接圖案52和鈍化膜14。在樹脂密封步驟 中，使用利用密封模或封裝灌注(p〇tting)方法的傳遞模塑 (transfer mold)方法。由於此樹脂密封步驟因而得到外部連 接端子50從樹脂密封表面突出的半導體晶圓ι〇。第6圖顯示 出如此得到的半導體晶圓10，藉由切割此晶圓成為小方 塊’得到單獨的半導體元件54。 第2A至2H圖為用來解釋根據本發明之第二實施例的 544742 A7 ——----- B7 —_ 五、發明説明（1〇 ) 半導體元件的製造方法的圖式。此實施例的製造方法基本 上相同於上述實施例的製造方法，但在此實施例中，在形 成互接圖案俾在半導體晶圓的電極形成表面上重新佈線之 後’電極形成表面被保留在啊篆的狀態，在最終成 品中以樹脂密封。 如第2A圖所示，形成有電極12的半導體晶圓1〇的表面 被鈍化膜丨4所覆蓋，留下電極12暴露出，然後，如第⑼圖 所不，導電層16被形成。在本實施例中，鉻、鈦_鎢合金， 以及金藉喷鍍方法以該順序被沈積於電極形成表面上，以 便形成導電層16。 接著，光敏電阻18被塗覆於導電層16的表面上（第2c
圖），然後，光敏電阻18被曝光和顯影，以便做圖案（第2D 圖），以便暴露出之後形成互接圖案的部份16a、形成墊的 邛伤16b(第5圖）、以及在導電層16的表面連接於電極Η的 部份16c(第5圖）。 接著，如第2E圖所示，金線被連結到形成墊的部份 16b ’以形成外部連接端子6〇。而且當使用金線形成外部連 接端子60時，在端部有突出部6〇a的外部連接端子⑹被形 成以相同於上述貫施例的方式，藉由融化金線尖端成為 球狀，將球狀部份連結到形成墊的部份16b，然後上拉和切 斷金線。 利用導電層16作為電鍍能力進送層（plating power feed layer)，導電層16的暴露表面被金電鍍，以形成第 囷所示的互接圖案62。在本實施例中，因為互接圖案a維 本紙張尺度適财b时標"7^7^ (21GX297公釐) —13 _—-—
------------- (請先閲讀背面之注意事項再填寫本頁) 、? 544742 A7 發明説明（11 持在最終成品中暴露於半導體元件的外表面，所以互接圖 案62藉金鍍層而形成。如圖所示，藉金鍍層，外部連接端 子60的表面亦被金鍍層覆蓋。 接著，如第2G圖所示，光敏電阻18(第217圖）從半導體 晶圓ίο的電極形成表面移除，然後導電層16的暴露表面被 蝕刻掉（第2H圖）。因此，鈍化膜14被暴露出，互接圖案變 得獨立。 將半導體晶圓切割成單獨的晶片而得到半導體元 件。在本貫施例的情況下，在使互接圖案62變得獨立之後 (在第2H圖所解釋的步驟之後），可能將半導體晶圓1〇的電 極形成表面用樹脂（未顯示）覆蓋住，以便留下外部連電極 的頂端暴露出。 第3圖為根據本發明第一實施例的半導體元件的製造 方法的流程圖，第4圖為根據第二實施例的製造方法的流程 圖。 比較第3和4圖所示之本發明方法以及第14和丨5圖所 示的相關技術的半導體元件的製造方法，在形成銅柱作為 外部連接端子之用來製造半導體元件的習知技術的方法中 (第14圖），層疊一乾燥膜以形成銅柱24,或是用銅鍍層堆 積成銅柱24的操作是必須的。相對於此，根據本發明方法， 因為外部電極係利用銅線或金線以導線接合方式形成，所 以可簡化製造程序，且可容易形成外部連接電極。 在藉-曲導線成L形而形成外部連接端子之用來製造 半導體元件的習.知技術的方法中（第15圖），將導線彎成l 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公楚） 14 (請先閲讀背面之注意事項再填寫本頁) 訂— 544742 A7 --·~__ B7 _ 五、發明說明（12 ) 〜 --- 形的步驟是需要的。而且塗覆一電阻層來給予外部連接端 子一強化鍍層的操作，以及曝光和顯影該電阻層是需要 =。相對於此，根據本發明方法，有可能以簡單的導線接 、口步驟形成外部.連接端子。而且，外部連接端子因銅錢而 破給予強化鍍層，俾形成互接圖案，而不需要塗覆、曝光 及顯影該電阻層。 以本發明方法製造出的半導體元件，具有不同於習知 技術的帛導體疋件的結才鼻，其不同在於外部連接端子和互 接圖案之間的接合部份，所以呈現出不同於習知技術的半 導體元件的動作和效果。第7八和73圖和第8八和犯圖為根 據本發明半導體元件的製造方法及習知技術的半導體元件 的製造方法所得到的半導體元件的外部連接端子的接合部 份和互接圖案的放大剖面圖。 第7A和7B圖顯示在互接圖案形成之後，以樹脂密封電 極形成表面的半導體元件的例子，而第8八和犯圖顯示互接 圖案暴露出的半導體元件的例子。 如第7A和8A圖所示，在根據本發明之半導體元件製 造方法中，在形成導電層16之後，銅線或金線被直接連結 到導電層16，以形成外部連接端子5〇和6〇，然後互接圖案 52和62藉銅鍍層或金鍍層而形成。相對於此，在相關的技 術的方法中，如第7B和8B圖中所示，在互接圖案2〇形成之 後，銅柱24或由金線形成的外部連接端子32，形成為在互 接圖案20的表面上的外部連接端子。 以此方式，.在本發明中，外部連接端子5〇和6〇被連結 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公复）
.............警…- (請先閲讀背面之注意事項再填寫本頁) 訂| 544742 A7 ^^ ----- -B7 五、發明説明---- 到‘電層16，且外部連接端子50和60的基部側（連結部）被 〆成互接圖案52和62的銅鍵層或金艘層中。所以，在 根據本發明的半導體元件中，相較於習知技術，外部連接 端子的高度減少至少互接圖案52和62的厚度量。因此，根 康本t月的半導體元件製造方法在形成薄和緊密的半導體 凡件上是有效的。而且，由第8A和8B圖的比較中很清楚看 在本务明中，外部連接端子6〇的高度變低。亦因為這 個原口，根據本發明，半導體元件整體可被緊密地製造。 、而且，當利用根據本發明的半導體元件製造方法時， Τ為鋼線或金線被直接連結到導電層16,以形成外部連接 *子50和60 ’所以優點在於外部連接端子可在被穩定支樓 下形成。 第9 Α至9 C圖顯示出外部連接端子，其係藉由將金線連 結到導電層16中的形成塾而形成，且其在圖案化電阻18的 处^路出第9 A圖顯示界定出形成墊的部份16b的電 的開口 ’》皮形成為較大於金線的連結部Y分。在此情況 下金線僅僅在其底部被連結到部份脱。第9B圖顯示開 a、7成為稍小於第9 A圖的情況。金線在其底部被連結到 口 IMW 6b。金線的連結部份的側邊的部份，與光敏電阻u 的側邊相接觸。第9C圖顯示出開口尺寸約相同於金線的連 結部份的情況。金線的底部被連結到形成墊的部份⑽。金 線的連結部份的側邊整個接觸於光敏電阻18的側邊。 、)此方式’根據藉由將金線或銅線直接連結到導電層 丨成外錢接端子的方法，因為金線或銅線被連結到 本紙張尺度適用中國國家標準(⑽
------------- (請先閲讀背面之注意事項再填寫本頁} 訂丨 544742 A7 -------— B7____ 五、發明説明（14 ) V電層16，且金線或銅線的連結部份被光敏電阻丨8所支 撐，所以可防止外部連接端子5〇和6〇的傾斜，且金線或銅 線可被可罪地連結到導電層1 6。而且，藉由將外部連接端 子50和60連結到.導電層16，然後以銅鍍層或金鍍層覆蓋導 電層16並且同日守藉由以銅鍍層或金艘層將外部連接端子 50和60的基部埋在互接圖案52和62中而支撐外部連接端子 50和60的基部（被連結的部份），外部連接端子咒和⑼被更 可靠地支撐。 第10A和10B圖以及第ι1Α和11B圖顯示安裝於板上的 本發明半導體元件相對於安裝於板上的習知技術半導體元 件的比較。第1 〇 A和10B圖顯示出根據本發明的半導體元件 (第10A圖）以及使用銅柱作為外部連接端子的習知半導體 元件（第10B圖）的比較。如第10B圖所示，當將形成有銅柱 24的半導體元件以焊料42安裝於板4〇上時，只有形成於銅 柱24的端表面的障礙層26從樹脂28的表面暴露出，而有不 良的焊接可沾性（solder wettability)。所以，焊料42有時不 會形成適合與銅柱連結的新月形。相對於此，當如第i〇a 圖所示安裝根據本發明的半導體元件時，由於突出部5〇a 從外部連接端子50突出，所以焊料42形成一合適的新月 形’所以半導體元件被可靠地安裝到板上。 第11A和11B圖顯示出互接圖案暴露出的本發明之半 導體元件（第ΠΑ圖）以及習知技術的半導體元件（第nB圖） 的比較。如第11B圖所示，當將習知技術的半導體元件（被 提供有藉由彎曲金線成為L形而得到外部連接端子32)安裝 本紙張尺度適用中國國家標準（) A4規格（21〇><297公釐) '"一-— -
——… (請先閱讀背面之注意事項再填寫本頁) 、言 544742 A7 ~*-----— B7__ 五、發明說明（15 ) ~" 於板4〇上時，外部連接端子32的尖端抵接於板40，以便連 結，所以半導體元件和板4〇互相隔開。相對於此，當將根 據本發明的半導體元件安裝於板4()上時，如第Μ圖所 不，知料42在外部連接端子6〇的突出部咖被沈積成新月 形，所以半導體元件和板40被可靠地連結，而且，半導體 元件和板40之間的距離可縮短。 以此方式，根據本發明的半導體元件可以可靠地安裝 於板上，以便確保高可靠度，諸如與板的良好電性連接。 根據本發明之半導體元件和其製造方法，如上面的說 明，可能藉由連結導線而容易地形成外部連接端子，因而 容易地簡化製造半導體元件的步驟。而且，根據本發明， 可能改良半導體元件的生產效率，並降低半導體元件的製 造成本。本發明使得外部連接端子能夠以高密度被配置， 且能夠處理較多數目的銷。而且，可能提供相當可靠的半 導體元件，其中外部連接端子被可靠地連結於板上。 儘管本發明已關於為舉例目的所選定的特定實施例 來說明，應該清楚的是很多改良可被熟於此技者做出，而 不會背離本發明的基本原則和範圍。 本揭露内容係關於2001年5月25日所申請之日本專利 申請案第號所包含之標的内容，其揭露内容整 個被明確地合併於此作為參考。 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） -18
— (請先閲讀背面之注意事項再填寫本頁) 、trl 544742 A7 B7 五、發明説明（16 ) 10.. .半導體晶圓 14.. .鈍化膜 16a...部份 18.. .光敏電阻 22.. .乾燥膜 26.. .障礙層 30…電阻 32.. .外部連接端子 42…焊料 50a...突出部 60.. .外部連接端子 62…互接圖案 元件標號對照表 12…電極 16.. .導電層 16b...部份 20…互接圖案 24···銅柱 2 8…樹脂 30a."開口 4 0…才反 50.. .外部連接端子 52…互接圖案 60a...突出部 (請先閲讀背面之注意事項再填寫本頁) 19 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐）

Claims (1)

  1. 申明專利範園 1 · 一種半導體元件，包含·· 形成於一半導體基體的半導體組件； 外部連接端+，其等將言亥等組件連接到一外部電 路，及 互接圖案’將該等半導體組件的電極連接到該等 外部連接端子， /、中"亥等外部連接端子係由含有導電材料的導 線所形成，而且 ^忒等導線之連結於該等互接圖案的部份，被埋在 形成該等互接圖案的該金屬層中。 2.如申請專利範圍第丨項之半導體元件，其中形成該等 妾囷案的4金屬層被銅錢層和金錢層其中一戶 形成。 3·如申請專利範圍第旧之半導體元件，其中該等導線 由金線或銅線中選出。 4·如申請專利範圍第1項之半導體元件，其中該金屬声 和該等導線的材料相同。 曰 5·如申請專利範圍第㈣之半導體元件，其中該金屬層 和該等導線的材料為金。 日 6·如申請專利範圍第；!項之半導體元件，其中該金屬層 和5玄專導線的材料為銅。 7.如申請專利範圍第㈣之半導體元件，纟中該等外部 連接端子被形成該等互接圖案的該金屬層的材料所 544742 申請專利範圍 覆蓋。 如申明專利範圍第1項之半導體元件，其中該半導體 元件中形成該等互接圖案的表面被密#，以便留下 该等外部連接端子暴露出。 9·如申請專利範圍第3項之半導體元件，其中該半導體 =件中形成該等互接圖案的表面被密圭t，以便留下 該等外部連接端子暴露出。 10·一種半導體元件製造方法，該半導體元件被提供有 形成於-半導體基體的半導體組件，將該等組件連 妾】外°卩電路的外部連接端子，及將該等半導體 組件的電極連接到該等外部連接端子的互接圖案， 該方法包含的步驟為·· 在該半導體基體中形成該等電極的整個表面上 形成一導電層， 在4導電層的該表面上形成一電阻圖案，留下該 導電層的某些部份暴露出，該等部份為該等外料 接端子將被連接到墊的部份以及欲形成 案的部份， 」字含有導電材料的導線，在欲形成墊的部份連結 到°亥‘電層，以便形成外部連接端子， 在該導電層的該等暴露部份形成一金屬層， 移除該電阻，及 移除因移除該電阻而暴露出的該導電層，以便形 成該等互接圖案。 u’如申請專利範圍第10項之半導體元件製造方法，其 中該等互接圖案被銅鑛層和錢層之其中一者所形 成。 12·如申請專利範圍第10項之半導體元件製造方法，其 中金線或銅線被用來作為該等導線。 13·如广請專利範圍第10項之半導體元件製造方法，其 中該相同材料被用於該金屬層和該等導線。 14·如申請專利範圍第10項之半導體元件製造方法，其 中金被用來作為該金屬層和該等導線的材料。、 15·如申請專利，範圍第10項之半導體元件製造方法，其 中銅被用來作為該金屬層和該等導線的材料。 16·如申請專利範圍第10項之半導體元件製造方法，其 :當在該導電層的該暴露部份形成該金屬層時，該 等外部連接端被子被該金屬層的該材料所覆蓋。 17.如申請專利範圍第H)項之半導體元件製造方:，其 中在形成該等互接㈣之後，該半導體元件中形成 該等互接圖_表面被密封，以便留下該等外部連 接端子暴露出。 18.如申請專利範圍第12項之半導體元件製造方法，其 中在形成該等互接圖案之後，該半導體元件中形成 該等互接圖案的表面被密封，以便留下該等外部連 接端子暴露出。
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