539780 A7 B7 五、發明説明（/ ) 【本發明之領域】 本發明係、關於-種具有斜面過渡膜之電化學電鍛裝 置，尤指一種適用於將金屬薄膜沈積於半導體晶圓上:具 有斜面過濾膜之電化學電鍍裝置。 【本發明之背景】 口電化學電鍍（ECP: Electr〇chemical⑴㈣）乃 疋將欲鍍4金屬作為陽極，半導體晶圓的表面作為陰極， 加上電壓之後，陽極金屬可溶解於電解溶液，並轉移到半 導體晶圓的表面，於晶圓的表面沈積出重複、無空洞的金 屬膜，此金屬膜再經後續微影及蚀刻等製程，即可形成半 導體元件之金屬内連線。 / 而在一般生產線上，為使沈積出之金屬膜具有良好且 句的性貝，因此，需要定期將電鍍裝置停機，以進行維 修及清潔的工作。然而，於復機過程中，重新將電解溶液 /王滿私鍍腔室時，原本充滿空氣的電鍍裝置時常會在陶瓷 薄膜與陽極纟間產生氣泡堆積，京尤算利用電解溶液之循環 迴流，亦很難將其去除，而此氣泡很容易在進行電鍍製程 時，穿過陶瓷薄膜，然後附著於晶圓上，於金屬薄膜沈積 k私中衍生為一種金屬膜之氣泡式缺陷，破壞金屬内連線 的品質。 發明人爰因於此，本於積極發明之精神，亟思一種可 以解决上述問題之「具有斜面過濾膜之電化學電鍍裝 置」，幾經研究實驗終至完成此項嘉惠世人之發明。 本紙張尺度適用中A4規格（210X297公董）_539780 A7 B7 V. Description of the Invention (/) [Field of the Invention] The present invention relates to an electrochemical electroforging device with a beveled transition film, especially a type suitable for depositing a metal thin film on a semiconductor wafer: Electrochemical plating device for bevel filter membrane. [Background of the present invention] Electrochemical plating (ECP: Electrochemical) is a method in which the metal to be plated is used as an anode, and the surface of a semiconductor wafer is used as a cathode. After the voltage is applied, the anode metal can be dissolved in the electrolytic solution and transferred. On the surface of the semiconductor wafer, a repeated, void-free metal film is deposited on the surface of the wafer. This metal film is then subjected to subsequent lithography and etching processes to form metal interconnects of the semiconductor element. / In general production lines, in order to make the deposited metal film have a good and smooth nature, the electroplating device needs to be shut down periodically for maintenance and cleaning work. However, during the recommissioning process, when the electrolytic solution / Wang Manshui plating chamber was re-used, the original air-filled plating device often produced bubble accumulation between the ceramic film and the anode. Jingyou considered the use of the electrolytic solution to recirculate. It is also difficult to remove it, and this bubble is easy to pass through the ceramic film during the electroplating process, and then adhere to the wafer, which is derived from the metal film deposition and is a bubble type defect of the metal film, which destroys the metal. The quality of the connection. Because of this, the inventor, in the spirit of active invention, urgently thought of an "electrochemical plating device with a beveled filter membrane" that could solve the above problems. After several research experiments, he finally completed this invention that benefits the world. This paper size is suitable for A4 size (210X297)
訏· — ^-------#. I I I (請先閲讀背面之注意事項再填寫本頁各欄) 539780 五、發明説明（2) 【本發明之概述】 發月之主要目的係在提供一種電化學電鍍裝置，俾 能輕易去除電解溶液中之氣泡，減少金屬膜氣泡式缺陷的 產生。 為達成上述之目的，本發明電化學電鍍裝置，係配合 :半導體晶圓以及—電解溶液，主要包括：—具有一中空 腔▲之;Λ ，-陽極單元，係位於該中空腔室内，用以提 供一金屬離子予該電解溶液；一陰極單元，係位於該陽極 單元之一侧，用以放置該半導體晶圓；以及一過滤膜，係 位於該陽極單元與該陰極單元之間，用以過濾該電解溶 液；其中該過濾膜面對該陽極單元之表面為一圓錐面或角 錐面。 由於本發明構造新穎，能提供產業上利用，且確有增 進功效，故依法申請發明專利。 【圖式簡單説明】 第1圖係本發明電化學電鍍裝置之剖視圖。 11 中空腔室 20 陽極單元 32 電鍍腔室 410圓錐面訏 · — ^ ------- #. III (Please read the notes on the back before filling in the columns on this page) 539780 V. Description of the invention (2) [Overview of the invention] The main purpose of the month is to Provided is an electrochemical plating device, which can easily remove bubbles in the electrolytic solution and reduce the occurrence of bubble defects of the metal film. In order to achieve the above object, the electrochemical plating device of the present invention is equipped with: a semiconductor wafer and-an electrolytic solution, mainly including:-having a hollow cavity ▲ of; Λ,-an anode unit, located in the hollow cavity, for Providing a metal ion to the electrolytic solution; a cathode unit located on one side of the anode unit for placing the semiconductor wafer; and a filter membrane located between the anode unit and the cathode unit for filtering The electrolytic solution; wherein the surface of the filter membrane facing the anode unit is a conical surface or a pyramidal surface. Since the present invention has a novel structure, can provide industrial use, and does have an increasing effect, it applies for an invention patent in accordance with the law. [Brief description of the drawings] FIG. 1 is a cross-sectional view of the electrochemical plating device of the present invention. 11 Hollow chamber 20 Anode unit 32 Plating chamber 410 Conical surface
(請先閲讀背面之注意事項再填寫本頁各襴) 計 --------, 【圖號説明 1 電化學電鍍裝置 10 殼體 12 硫酸銅溶液 13 輸入管 30 陰極單元 3 1 半導體晶圓 40 陶瓷薄膜 41 間隙 41 1 側邊 ___ 5 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 、發明説明（3) 【較佳具體實施例之詳細説明】 本發明電化學雷躺 (請先閲讀背面之注意事項再填寫本頁各欄) 酸铜溶液。本發明電電解溶液無限制，較佳為硫 含其他附加單元，較佳子:二裳置之殼體可視需要地更包 多餘氣二出:液於電鍛裝置或將該電化學電鍛裝置之 难乳版排出。本發明電化 限制，較佳為铜離子。太^鍍裝置（金屬離子種類無 與半導體晶圓接觸之面心電化學電鍍裝置之陰極單元 單元之兩、、六壤芬*、 ^為具有至少一導體，以將陰極 y“半導體晶圓。本發明 濾膜可為習用之傳统過飧腔，、子讀裝置之過 電化與-推进/為一陶堯薄膜。本發明 之氣：二1 滤膜為一具有斜面之膜體，以將多餘 a 、人過㈣邊緣，避免影響該電化學電鍍反應 =進仃’本發明電化學電鍍裝置之過滤膜較佳為其中心之 厚度大於其輯之厚度之_屬，該賴 ，。本發明電化學電鍵裝置之過滤膜之表丄:: 車又佳為平滑之多孔性陶瓷表面。 為能讓貴審查委員能更瞭解本發明之技術内容，特 舉一較佳具體實施例説明如下。 如第1圖所示之電化學電鍍裝置i，殼體10具有中空 腔室11及輸入硫酸銅溶液12之輸入管13 ;陽極單元2〇位 於中空腔室11内，用以提供銅離子予硫酸鋼溶液i 2，•陰 極單元3 0位於陽極單元2 〇之上侧，用以放置半導體晶圓 31 ’且陰極單元30與半導體晶圓31接觸之面具有複數個 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 539780 A7 --~-——-__ 五、發明説明（4〇 ' --- 導體，以將陰極單元3 0之電流導至半導體晶圓3 1 ;陶瓷 薄膜40位於陽極單元20與陰極單元30之間，用來過濾硫 酸銅溶液12，且陶瓷薄膜40面對陽極單元20之表面為一 圓錐面4 1 0。 當開始晶圓電鍍製程時，首先必須將硫酸銅溶液12注 滿整個電化學電鍍裝置1，以使陰極單元30上之半導體晶 圓3 1 το全沈浸於硫酸銅溶液丨2裡。硫酸銅溶液丨2由輸入 管13進入電化學電鍍裝置1後，流經陽極單元20，之後進 入陽極單元20與陶瓷薄膜40間的間隙41，然後再穿過陶 瓷薄膜40進入電鍍腔室32。在上述過程中，硫酸銅溶液 12同時會將原本存在於電化學電鍍裝置丨内之空氣驅趕出 來，因此，當硫酸銅溶液12接觸到陶瓷薄膜4〇的圓錐面 4 1 0時，全氣即沿著此斜面被硫酸銅溶液丨2驅趕至圓錐面 410的侧邊411，使空氣集中於陶瓷薄膜4〇的邊緣排出， 而不會進入電鍍腔室32。另外，當空氣溶於硫酸銅溶液 12中成為氣泡時，氣泡也可沿著圓錐面41〇跑到陶瓷薄膜 40的邊緣排出。因此，硫酸銅溶液12中的氣泡即可輕易 地被排除，於是沈積出之金屬薄膜產生氣泡式缺陷的機會 即大大降低。 综上所陳，本發明無論就目的、手段及功效，在在均 顯示其迥異於習知技術之特徵，為「具有斜面過濾膜之電 化學電鍵裝置」之一大突破。惟應注意的是，上述諸多實 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐^ --------- ------*----钉--------- (請先閱讀背面之注意事項再填寫本頁各攔)(Please read the notes on the back before filling in this page.) --------, [Illustration of drawing number 1 Electrochemical plating device 10 Case 12 Copper sulfate solution 13 Input tube 30 Cathode unit 3 1 Semiconductor Wafer 40 Ceramic film 41 Gap 41 1 Side ___ 5 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm), the description of the invention (3) [Detailed description of the preferred embodiment] The invention is electrified Learn to lie down (please read the precautions on the back before filling in the columns on this page) acid copper solution. The electric electrolytic solution of the present invention is not limited, and it is preferably sulfur containing other additional units. The better part is: the casing of the two clothes can optionally contain more excess gas. The liquid is in the electric forging device or the electrochemical forging device. Difficult to discharge milk. The electrochemical limitation of the present invention is preferably copper ions. Tai-plating device (metal ions do not have contact with semiconductor wafers. The cathode unit of the face-centered electrochemical plating device. Two, six soil fen *, ^ have at least one conductor to the cathode y "semiconductor wafer. The filter membrane of the present invention can be a conventional conventional cavity, the over-electricity of the sub-reading device and -advance / is a Tao Yao film. The gas of the present invention: 2 1 The filter membrane is a membrane body with a bevel to reduce the excess a. A person passes over the edge to avoid affecting the electrochemical plating reaction. = The filter film of the electrochemical plating device of the present invention preferably has a thickness at the center that is larger than the thickness of the series. The invention is electrified. Table of the filter membrane of the electric key device: Car is also a smooth porous ceramic surface. In order for your review committee to better understand the technical content of the present invention, a preferred specific embodiment is described below. The electrochemical plating device i shown in FIG. 1 has a housing 10 having a hollow chamber 11 and an input pipe 13 for inputting a copper sulfate solution 12; the anode unit 20 is located in the hollow chamber 11 and is used to provide copper ions to the sulfuric acid steel solution. i 2, · cathode unit 3 0 is located on the upper side of the anode unit 2 and is used for placing the semiconductor wafer 31 ′, and the surface of the cathode unit 30 in contact with the semiconductor wafer 31 has a plurality of paper sizes applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 539780 A7-~ -——-__ V. Description of the invention (4〇 '--- Conductor to direct the current of cathode unit 30 to semiconductor wafer 3 1; ceramic film 40 is located at anode unit 20 and cathode unit 30 In between, it is used to filter the copper sulfate solution 12, and the surface of the ceramic film 40 facing the anode unit 20 is a conical surface 4 1 0. When the wafer plating process is started, the copper sulfate solution 12 must be filled with the entire electrochemical Electroplating device 1 so that semiconductor wafer 3 1 το on cathode unit 30 is completely immersed in copper sulfate solution 丨 2. Copper sulfate solution 丨 2 enters electrochemical electroplating device 1 through input pipe 13 and flows through anode unit 20, It then enters the gap 41 between the anode unit 20 and the ceramic thin film 40, and then passes through the ceramic thin film 40 and enters the plating chamber 32. In the above process, the copper sulfate solution 12 will simultaneously air that originally exists in the electrochemical plating device 丨Drive out Therefore, when the copper sulfate solution 12 contacts the conical surface 4 10 of the ceramic thin film 40, the entire gas is driven by the copper sulfate solution along the slope to the side 411 of the conical surface 410, so that the air is concentrated on The edge of the ceramic film 40 is discharged without entering the plating chamber 32. In addition, when the air is dissolved in the copper sulfate solution 12 and becomes a bubble, the bubble can also run along the conical surface 410 to the edge of the ceramic film 40 and be discharged. Therefore, the bubbles in the copper sulfate solution 12 can be easily eliminated, so the chance of the bubble-like defects of the deposited metal film is greatly reduced. In summary, the present invention is It shows its characteristics that are quite different from the conventional technology, and it is a major breakthrough in "electrochemical key bonding device with bevel filter membrane". It should be noted that many of the above paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm ^ --------- ------ * ---- nail --- ------ (Please read the precautions on the back before filling in the blocks on this page)
539780 A7 _B7_ 五、發明説明（5) 範圍自應以申請專利範圍所述為準，而非僅限於上述實施 例0 (請先閲讀背面之注意事項再填寫本頁各攔) • in i^i ^·ϋ ^^1 i^i ^ 一 、 · n ϋ I an n、\呑 邇—. 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐）539780 A7 _B7_ V. Description of the invention (5) The scope of the invention shall be based on the scope of the patent application, not only the above-mentioned embodiment 0 (please read the precautions on the back before filling in the blocks on this page) • in i ^ i ^ · Ϋ ^^ 1 i ^ i ^ First, · n ϋ I an n, \ 呑 迩 —. This paper size applies to China National Standard (CNS) Α4 specification (210X297 mm)