JP3102641B1 - Substrate processing equipment - Google Patents

Abstract

An object of the present invention is to provide a substrate processing apparatus in which a flow of a processing liquid becomes uniform on a substrate to be processed on a bottom surface of a processing tank, thereby enabling a uniform processing. SOLUTION: An overflow portion in which a plating solution 37 overflows from the entire periphery of an upper portion of the side surface of the processing bath 31 is provided, and a slit 47 is provided at a lower portion of the side surface of the processing bath 31 so that a side surface near the semiconductor wafer 33 is provided. The plating solution 37 is discharged from the entire periphery of the portion through the slit 47.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to cleaning or surface treatment of a flat substrate such as a semiconductor wafer, a liquid crystal glass, a disk, a lens or the like by using a treatment liquid such as a chemical solution or pure water, and further energizing the substrate. The present invention relates to a substrate processing apparatus for performing electrolytic plating by using the method.

[0002]

2. Description of the Related Art FIG. 3 shows a conventional face-up type electrolytic plating apparatus for semiconductor wafers as a conventional substrate processing apparatus. This apparatus has an opening 12 on the bottom surface of a processing bath 11, and a semiconductor wafer 13 is held in the opening 12 with its surface (processing surface) facing the inside of the processing bath 11. An anode electrode 14 is provided at an upper position in the processing tank 11, and a power supply 15 is connected between the anode electrode 14 and the semiconductor wafer 13 on the cathode side. A plating solution 19 is supplied from a plating solution tank 16 through a supply pipe 18 to a plating solution 19 from a central portion of an upper surface of the processing bath 11 into the processing bath 11. Excess plating solution 19 in processing tank 11 is removed from processing tank 1.
1 is collected in the plating solution tank 16 from one side of the upper surface via the discharge pipe 20.

In the above-described apparatus, a plating solution 19 is supplied from a plating solution tank 16 into a processing tank 11 through a supply pipe 18, and the plating solution 19 flows between the surface of the semiconductor wafer 13 and the anode electrode 14. When it is satisfied, a current flows between the anode electrode 14 and the semiconductor wafer 13, and electrolytic plating is started on the surface (processed surface) of the semiconductor wafer 13.

[0004]

However, in the conventional apparatus as described above, the processing tank 11 is connected by the supply pipe 18.
After the plating solution 19 is supplied to the processing bath 11 from the central portion of the upper surface of the semiconductor wafer, the excess plating solution 19 is discharged from one side of the upper surface of the processing bath 11 by the discharge pipe 20. 13 has a disadvantage that the plating film thickness on the semiconductor wafer 13 becomes non-uniform.

[0005] The present invention has been made in view of the above points,
An object of the present invention is to provide a substrate processing apparatus in which a flow of a processing liquid is uniform on a substrate to be processed on a bottom surface of a processing tank and uniform processing can be performed.

[0006]

According to a first substrate processing apparatus of the present invention, a substrate is held on a bottom surface of a processing tank, and a processing liquid is supplied into the processing tank from a central portion of the upper surface to process the substrate. In the substrate processing apparatus, a side surface of the processing tank is provided with an overflow section in which the processing liquid overflows from the entire upper periphery of the side surface, and a slit is provided at a lower part of the side surface of the processing tank, so that the side surface of the side surface near the substrate can be entirely surrounded. The treatment liquid is discharged through the slit.

In the first substrate processing apparatus, when the processing liquid accumulates in the processing tank and the processing liquid starts overflowing from the overflow portion on the side surface, it is preferable to start discharging the processing liquid by the slit.

A second substrate processing apparatus according to the present invention is a substrate processing apparatus for processing a substrate by holding a substrate on a bottom surface of a processing tank and supplying a processing liquid into the processing tank from a central portion of the upper surface thereof. A discharge port for the processing liquid is provided all around the lower side surface of the processing tank, and an overflow portion communicating with the discharge port is provided outside the processing tank.

In the substrate processing apparatus of the present invention, an electrode is provided in the processing tank, a power source is connected between the electrode and the substrate, and the processing solution is a plating solution. Device.

[0010]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention; FIG.
FIG. 1 is a configuration diagram showing a first example of a semiconductor wafer face-up type electroplating apparatus according to the present invention as a first embodiment of the present invention. In this configuration diagram, the processing tank 31 and the plating solution tank 36 are shown in a sectional view. The processing tank 31 has an opening 32 on the bottom surface.
The semiconductor wafer 3 with the surface (processed surface) facing the inside of the processing bath 31.
3 is retained. An anode electrode 34 is provided at an upper position in the processing tank 31, and a power supply 35 is connected between the anode electrode 34 and the semiconductor wafer 33 on the cathode side. A plating solution 37 is stored in the plating solution tank 36. The plating solution 37 is supplied from the center of the upper surface of the processing bath 31 to the processing bath 3 by a pump 38 through a supply pipe 39.
1 is supplied.

The side surface of the processing tank 31 has a double structure. In the double structure, the inner side portion 40 has an upper end that does not reach the upper surface of the processing tank 31, and therefore, the plating solution 37 filled inside the inner side portion 40 is filled with the inner side portion 40. From the upper end of the side portion 40 and the outer side portion 4
The discharge space portion 42 overflows between the entirety of the side surfaces. The space between the inner side surface portion 40 and the outer side surface portion 41 is vertically divided into two by a partition plate 43, and the space portion above the partition plate 43 is the discharge space portion 42. The discharge space 42 includes a discharge pipe 44, a switching valve 45,
In addition, it is connected to the plating solution tank 36 via a discharge pipe 46. Processing tank 31 near the outer peripheral end of semiconductor wafer 33
A plurality of slits 4 are provided on the lower side surface over the entire circumference of the side surface.
7 is formed. The slit 47 is connected to the plating solution tank 36 via a discharge pipe 48, the switching valve 45, and the discharge pipe 46.

In the device configured as described above,
The plating solution 37 in the plating solution tank 36 is supplied into the processing tank 31 from the center of the upper surface of the processing tank 31 via the supply pipe 39 by the pump 38. When the plating solution 37 accumulates inside the inner side surface portion 40 of the processing tank 31 up to the upper end of the side surface portion 40 by this supply, the plating solution 37 is discharged from the upper end of the side surface portion 40 to the outside around the entire side surface. The plating solution 37 that overflows into the space 42 and overflows is collected in the plating solution tank 36 via the discharge pipe 44, the switching valve 45, and the discharge pipe 46. In this state, the plating solution 37 is filled between the anode electrode 34 and the surface (processed surface) of the semiconductor wafer 33, and a current flows from the power supply 35 between the anode electrode 34 and the semiconductor wafer 33,
Electroplating is performed. The switching valve 45 also opens the discharge path on the slit 47 side. As a result, processing tank 3
The excess plating solution 37 in the processing tank 31 overflows in the entire upper surface of the side surface and the slit 47 in the lower portion of the processing bath 31 simultaneously with the overflow of the processing bath 31 near the semiconductor wafer 33.
It is discharged from the entire circumference of the side.

As described above, according to the above-described apparatus, the plating solution 37 supplied into the processing tank 31 from the center of the upper surface of the processing tank 31 flows above and near the semiconductor wafer 33 by the overflow and the slit 47. As a result, the gas is discharged from the entire side surface of the processing tank 31. Therefore, the flow of the plating solution 37 on the semiconductor wafer 33 becomes uniform, and as a result, the plating film thickness on the semiconductor wafer 33 becomes uniform.

FIG. 2 shows a second embodiment of the present invention.
FIG. 3 is a configuration diagram illustrating a second example of a semiconductor wafer face-up type electrolytic plating apparatus according to the present invention. In the second example, a plating solution discharge port 51 is provided all around the lower side surface of the processing tank 31, and an overflow section 52 communicating with the discharge port 51 is provided outside the processing tank 31. The overflow part 52 includes an envelope part 53 and a partition part 54 that divides the inside of the envelope part 53 inward and outward except for the upper end thereof, and corresponds to the height of the upper part of the processing tank 31. Has overflow action. The discharge side of the overflow section 52 is connected to the plating solution tank 36 by a discharge pipe 55.

In the case of such a configuration, the plating solution 37 accumulates in the processing tank 31 up to its upper part in the processing tank 31 by the action of the overflow section 52, and in this state, the excess plating solution 37
Is discharged from the discharge port 51 on the entire periphery of the lower side surface of the processing tank 31 through the overflow portion 52. The processing in the vicinity of the semiconductor wafer 33 is performed through the discharge port 51 in the same manner as in the first example. Since the plating solution 37 is discharged from the entire periphery of the side surface of the tank 31, the flow of the plating solution 37 on the semiconductor wafer 33 becomes uniform as in the first example, and the plating film thickness on the semiconductor wafer 33 becomes uniform. become.

In the above description, the treatment liquid discharge structure according to the present invention is applied to a semiconductor wafer face-up type electrolytic plating apparatus.
It is possible to improve the processing quality by making the flow of the processing liquid uniform on the substrate to be processed by using the cleaning apparatus and other surface processing apparatuses. Further, the substrate to be processed may be a flat substrate such as a liquid crystal glass or a disk other than the semiconductor wafer. Further, the slit 47 and the discharge port 51 may be formed as a single slit and a discharge port all around the side surface of the processing tank 31, or may be formed by dividing into a plurality of slits and a discharge port.

[0017]

As described above in detail, according to the substrate processing apparatus of the present invention, the flow of the processing liquid on the substrate to be processed on the bottom surface of the processing tank becomes uniform, and uniform processing becomes possible.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a substrate processing apparatus according to the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the substrate processing apparatus according to the present invention.

FIG. 3 is a configuration diagram showing a conventional face-up type electrolytic plating apparatus for a semiconductor wafer.

[Explanation of symbols]

 Reference Signs List 31 processing tank 32 opening 33 semiconductor wafer 34 anode electrode 35 power supply 36 plating solution tank 37 plating solution 38 pump 39 supply pipe 40, 41 side section 42 discharge space section 44, 46, 48 discharge pipe 45 switching valve 47 slit

Continued on the front page (72) Inventor Tetsuro Otsubo 25 Achigaya, Shimada City, Shizuoka Prefecture Shimada Rika Kogyo Co., Ltd. (72) Inventor Yasuomi Morito 25 Achigaya, Shimada City, Shizuoka Prefecture Shimada Rika Kogyo Co., Ltd. (56 References JP-A-10-172974 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) C25D 17/00 H01L 21/304

Claims (2)

(57) [Claims] In a substrate processing apparatus for holding a substrate on a bottom surface of a processing tank and supplying a processing liquid from a central portion of an upper surface of the processing tank into the processing tank to process the substrate, processing is performed on the entire periphery of a lower side surface of the processing tank. A substrate processing apparatus comprising: a liquid discharge port; and an overflow portion communicating with the discharge port, provided outside the processing tank. 2. The substrate processing apparatus according to claim 1, wherein an electrode is provided in the processing tank, a power source is connected between the electrode and the substrate, the processing liquid is a plating solution, and the apparatus is an electrolytic plating apparatus. A substrate processing apparatus, characterized in that: