590989 A7 B7 五、發明説明（/ ) 【本發明之領域】 本發明係關於一種電化學電鍍裝置及去除氣泡之方 法，尤指一種適用於將金屬薄膜沈積於半導體晶圓上之電 化學電鍍裝置以及避免氣泡式缺陷產生之方法。 【本發明之背景】 電化學電鍍（ECP·· Electrochemical piating)乃 是將欲鍍之金屬作為陽極，半導體晶圓的表面作為陰極， 加上電壓之後，陽極金屬可溶解於電解質，並轉移到半導 體晶圓的表面，於晶圓的表面沈積出重複、無空洞的金屬 薄膜，此金屬薄膜再經後續微影及蝕刻等製程，即可形成 半導體元件之金屬内連線。 在一般生產線上，為使沈積出之金屬薄膜具有良好且 均一的性質，因此，需要定期將電鍍裝置停機，以進行維 修及清潔的工作。然而，於停機的過程中，當電解溶液被 排出電鍍裝置、流回到貯槽時，時常會有氣泡堆積在用來 過遽電解溶液的陶究薄膜上，就算利用電解溶液之循環迴 流沖洗，亦很難將其去除，而此氣泡很容易在進行電鍵製 程時:離開陶资薄膜，然後附著於晶圓上，於所沈積出又的 金屬薄膜上生成一種氣泡式缺陷，破壞最終定義出之金 内連線的品質。 “ 發明人爰因於此，本於積極發明之精神，亟思一種可 以解決上述問題之「電化學電鍍裝置及去除氣泡之方 法」，幾經研究實驗終至完成此項嘉惠世人之發明。万 ^紙張尺度適用中國國A4規格（210X297公釐厂-----____ 1-----------i (請先閱讀背面之注意事項再填寫本頁各攔) 訂· ·! 590989 A7 B7 五、發明説明（2 ) 【本發明之概述】 本發明之主要目的係在提供一種電化學電鍍裝置及去 除氣泡之方法，俾能將陶瓷薄膜之氣泡去除，避免沈積之 金屬層產生氣泡式缺陷，以提高金屬内連線之品質。 為達成上述之目的，本發明一種電化學電鍍裝置，係 配合一半導體晶圓以及一電解溶液，主要包括：一具有一 中二腔▲之敗體，一〶極單元，係位於該中空腔室之内， 用以提供一金屬離子予該電解溶液；一陰極單元，係位於 該陽極單元之一侧，用以放置該半導體晶圓；一過濾膜， 係位於該陽極單元與該陰極單元之間，用以過濾該電解溶 液中乏雜質；以及一具有至少一缺口之擋板，係位於該陰 極單元與該過濾膜之間，用以增加該過濾膜之局部液壓。 為達成上述之目的，本發明一種電化學電鍍裝置之氣 泡去除之方法，係配合一半導體晶圓，主要包含以下之步 騍·首先提供一裝有一電解溶液之電化學電鍍裝置，其 中’違電化學電鐘裝置包含一具有一中空腔室之殼體·一 陽極單元，係位於該中空腔室之内，用以提供一金屬離子 予該電解溶液；一陰極單元，係位於該陽極單元之一側， 用以放置該半導體晶圓；一過濾膜，係位於該陽極單元與 該陰極單元之間，用以過濾該電解溶液中之雜質；至少一 輸入管，用以輸入該電解溶液；以及一具有至少一缺口之 擋板，係位於該陰極單元與該過濾膜之間。接著旋轉該具 _____5_ 本紙張尺度適用中國國家標準（CNS) A4規格（210X1297公楚） '-------—___ --------..-------^裝 (請先閲讀背面之注意事項再塡寫本頁各棚) 訂i 590989 A7 B7 五、發明説明（3) 一 ~ 缺口之孩擋板，並自輸入管輸入該電解溶液，使該電解溶 液流經該缺口且穿透該過遽膜。 由於本發明構造新穎，能提供產業上利用，且確有增 進功效，故依法申請發明專利。 ^ 【圖式簡單説明】 第1圖係本發明本發明電化學電鍍裝置之剖視圖。 弟2圖係本發明擔板之立體圖。 【圖號説明】 1 電化學電鍍裝置 10 殼體 11 輸入管 12 中空腔室 13 硫酸銅溶液 14 電鍍腔室 20 陽極單元 30 陰極單元 3 1 半導體晶圓 3 11 待鍍面 40 陶瓷薄膜 41 區域 50 擋板 5 1 缺口 【較佳具體實施例之詳細説明】 本發明電化學電鍍裝置及去除氣泡之方法之電解溶液 較佳為硫酸銅溶液。本發明電化學電鍍裝置及去除氣泡之 方法之殼體無限制，可視需要地附加元件以增加其功能， 較佳為包含至少一輸入管，用以輸入該電解溶液。本發明 電化學電鍍裝置及去除氣泡之方法之金屬離子較佳為銅離 子。本發明電化學電鍍裝置及去除氣泡之方法之陰極單元 與半導體晶圓接觸之面較佳為具有至少一導體，用以將該 本紙張尺度適用標準（CNS) A4k格（21()χ2697涵-- l·----------------訂 i (請先閱讀背面之注意事項再填寫本頁各欄) 丨#. 590989 五、發明説明（4) 二：：7〇<私/厄導至孩半導體晶圓。本發明電化學電鲈裝 膜。方法之過遽膜無限制，較佳為-陶‘薄 L::! 裝置及去除氣泡之方法之擋板大小 車又佳為其半徑與半導體晶圓之半徑 學::裝置及去除氣泡之方法之缺口形狀:限制:： 之溝’缺口之長度亦無限制，較佳為與擋板 % 」能讓貴審查委員能更瞭解本發明之技術内容，特 牛較佳具體實施例説明如下。 請參見第1圖本發明電化學電鍍裝之剖視圖 訂 =、有「輸人官11及—中空腔室12，作為電解溶液之硫 I銅洛硬13由輸入管"進入電化學電鍍裝置i。陽極單元 ^位於中”空腔室12之内，用來提供銅離子予硫酸鋼溶液 。陰極早兀30位於陽極單元2〇之上側，用以放置半導 體晶圓3卜且陰極單元3〇與半導體晶圓31接觸之面具有 至少一導體，用以將陰極單元3〇之電子流導至半導體晶圓 31，。陶完薄膜40位於陽極單元2〇與陰極單元3〇之間，用 =過滤硫酸銅溶液13。擋板5()位於陰極單元⑼與陶资薄 膜4〇《間，擔板5G的外觀請參見第2圖擋板之立體圖，擒 板50的半徑與半導體晶圓31的半徑相同，擋板並具有 5 1，缺口 5 1的形狀為一長條形直溝，缺口 $ 1的長 度L等於擋板50的半徑。當硫酸銅溶液13由中空腔室丨之往 上流進電鍍腔室14時，會先後流經陶瓷薄膜40與擋板 5〇由於擋板50只容許硫酸銅溶液13由缺口 51通過，所 本紙張尺度適用標準（CNS) A4g (2獻二公楚「 590989 A7 ____B7^__ 五、發明説明（与） —- 以硫酸銅溶液13在通過陶瓷薄膜40時，也將集中由缺口 5 1下方之區域4 1通過，因此硫酸銅溶液丨3在通過陶瓷薄 膜40之區域4 1時流速會變快，因而造成區域4丨之局部液 壓增大，藉由此以將陷於區域41内之氣泡清除。依此類 推，可將陶瓷薄膜40每隔一段時間固定旋轉一段距離，而 此距離恰好等於缺口 51的寬度w，如此一來，即可將陷於 陶瓷薄膜40上之氣泡逐一去除。 因此，在將銅電鍍至半導體晶圓31的過程中，可避免 或減少氣泡跑到半導體晶圓31的待鍍面3丨丨上，妨礙硫酸 銅溶液13與待鍍面3 n的接觸，而所沈積出的金屬薄膜上 也就不會有氣泡式缺陷產生，金屬内連線之品質即可大為 提升。 综上所陳，本發明無論就目的、手段及功效，在在均 顯示其迥異於習知技術之特徵，為「電化學電鍍裝置及去 除氣泡之方法」之一大突破。惟應注意的是，上述諸多實 施例僅係為了便於説明而舉例❿已，I發明所主張之權利 範圍自應以申請專利範圍所述為準，而非僅限於上述實施 例。 --------------·裝---------訂 i (請先閲讀背面之注意事項再填寫本頁各欄)590989 A7 B7 V. Description of the invention (/) [Field of the invention] The present invention relates to an electrochemical plating device and a method for removing air bubbles, especially an electrochemical plating device suitable for depositing a metal thin film on a semiconductor wafer. And ways to avoid bubble defects. [Background of the present invention] Electrochemical plating (ECP ·· Electrochemical piating) is to use the metal to be plated as the anode and the surface of the semiconductor wafer as the cathode. After the voltage is applied, the anode metal can be dissolved in the electrolyte and transferred to the semiconductor On the surface of the wafer, a repeating, void-free metal thin film is deposited on the surface of the wafer. This metal thin film is then subjected to subsequent lithography and etching processes to form metal interconnects of the semiconductor device. In general production lines, in order to make the deposited metal film have good and uniform properties, it is necessary to periodically shut down the plating equipment for maintenance and cleaning. However, during the shutdown process, when the electrolytic solution is discharged from the electroplating device and returned to the storage tank, bubbles often accumulate on the ceramic film used to purge the electrolytic solution. It is difficult to remove it, and this bubble is very easy to perform during the key bonding process: leaving the ceramic film and then attaching it to the wafer, a bubble-like defect is generated on the deposited metal film, destroying the gold finally defined The quality of the interconnect. "The inventor was born of this, and in the spirit of active invention, eagerly thought of an" electrochemical plating device and a method for removing air bubbles "that could solve the above problems. After several research experiments, this invention that benefited the world was completed. Million paper size is applicable to China A4 specification (210X297 mm factory -----____ 1 ----------- i (Please read the precautions on the back before filling in the blocks on this page) Order · ·! 590989 A7 B7 V. Description of the invention (2) [Summary of the invention] The main purpose of the invention is to provide an electrochemical plating device and a method for removing air bubbles, which can remove the air bubbles of the ceramic film and avoid the deposited metal In order to achieve the above purpose, an electrochemical plating device of the present invention is matched with a semiconductor wafer and an electrolytic solution, and mainly includes: one having a middle and two cavities ▲ The defeated body, a cathode unit, is located in the hollow chamber to provide a metal ion to the electrolytic solution; a cathode unit is located on one side of the anode unit, and is used to place the semiconductor wafer; A filter membrane is located between the anode unit and the cathode unit for filtering the impurities in the electrolytic solution; and a baffle plate having at least one gap is located between the cathode unit and the filter membrane for increase The local hydraulic pressure of the filter membrane. In order to achieve the above-mentioned object, a method for removing bubbles in an electrochemical plating device according to the present invention, which is combined with a semiconductor wafer, mainly includes the following steps: First, an electrochemical device containing an electrolytic solution is provided. Electroplating device, in which the electro-chemical clock device includes a housing with a hollow chamber and an anode unit, which are located in the hollow chamber to provide a metal ion to the electrolytic solution; a cathode unit, Is located on one side of the anode unit for placing the semiconductor wafer; a filter membrane is located between the anode unit and the cathode unit for filtering impurities in the electrolytic solution; at least one input pipe is used for Enter the electrolytic solution; and a baffle with at least one notch, located between the cathode unit and the filter membrane. Then rotate the tool _____5_ This paper size applies to China National Standard (CNS) A4 (210X1297) '-------—___ --------..------- ^ equipment (please read the precautions on the back before writing the sheds on this page) Order i 590989 A7 B7 V. Description of the invention (3) 1 ~ a gap of the gap, and input the electrolytic solution from the input tube, so that the electrolytic solution flows through the gap and penetrates the membrane. Since the invention has a novel structure, it can provide industrial use, and indeed has an enhanced effect. Therefore, apply for an invention patent in accordance with the law. ^ [Simplified illustration of the drawing] Figure 1 is a cross-sectional view of the electrochemical plating device of the present invention. Figure 2 is a perspective view of the stretcher of the present invention. [Illustration of the drawing number] 1 Electrochemical plating device 10 Housing 11 Input tube 12 Hollow chamber 13 Copper sulfate solution 14 Electroplating chamber 20 Anode unit 30 Cathode unit 3 1 Semiconductor wafer 3 11 Surface to be plated 40 Ceramic film 41 Area 50 Baffle 5 1 Notch [preferable implementation Detailed description of examples] The electrolytic solution of the electrochemical plating device and the method for removing air bubbles of the present invention is preferably a copper sulfate solution. The casing of the electrochemical plating device and the method for removing air bubbles according to the present invention is not limited, and additional components may be added as needed to increase its function, and it is preferable to include at least one input tube for inputting the electrolytic solution. The metal ion of the electrochemical plating device and the method for removing bubbles of the present invention is preferably copper ions. The surface of the cathode unit in contact with the semiconductor wafer of the electrochemical plating device and the method for removing air bubbles of the present invention preferably has at least one conductor for applying the paper standard (CNS) A4k grid (21 () χ2697)- -l · ---------------- Order i (Please read the notes on the back before filling in the columns on this page) 丨 #. 590989 V. Description of the invention (4) II: 7〇 < Private / Electrically conductive semiconductor wafers. The electrochemical electric bass film of the present invention. The method has no limitation on the film, preferably-Tao'thin L ::! Device and method of removing air bubbles The board size car is also good for its radius and the radius of the semiconductor wafer. The shape of the notch: the device and the method for removing air bubbles: Restriction: The length of the notch is not limited, preferably with the baffle. Your reviewer can better understand the technical content of the present invention, and the preferred embodiment of the special cow is explained as follows. Please refer to FIG. 1 for a cross-sectional view of the electrochemical plating of the present invention. As the electrolytic solution, sulfur I, copper Luo hard 13 enters the electrochemical plating device i from the input tube. The anode unit is located at The inside of the cavity 12 is used to provide copper ions to the sulfuric acid steel solution. The cathode 30 is located above the anode unit 20 and is used to place the semiconductor wafer 3b and the cathode unit 30 is in contact with the semiconductor wafer 31. The surface has at least one conductor for conducting electron flow from the cathode unit 30 to the semiconductor wafer 31. The finished ceramic film 40 is located between the anode unit 20 and the cathode unit 30, and the copper sulfate solution 13 is filtered. The plate 5 () is located between the cathode unit ⑼ and the ceramic film 40 °. For the appearance of the carrier 5G, please refer to the perspective view of the baffle in FIG. 51, the shape of the notch 51 is a long straight groove, and the length L of the notch $ 1 is equal to the radius of the baffle 50. When the copper sulfate solution 13 flows upward from the hollow chamber 丨 into the electroplating chamber 14, it will It flows through the ceramic film 40 and the baffle plate 50. Since the baffle plate 50 only allows the copper sulfate solution 13 to pass through the notch 51, the paper size applicable standard (CNS) A4g (2 Xian Ergong Chu "590989 A7 ____ B7 ^ __ V. Description of the invention (and) —- Take copper sulfate solution 13 through ceramic thin film At 40 o'clock, it will also be concentrated to pass through the area 41 below the notch 51, so the copper sulfate solution 丨 3 will flow faster when passing through the area 41 of the ceramic film 40, thereby causing the local hydraulic pressure in area 4 丨 to increase. In this way, the bubbles trapped in the area 41 are removed. By analogy, the ceramic film 40 can be fixedly rotated at a certain interval every time, and this distance is exactly equal to the width w of the notch 51. In this way, the trapped ceramics can be trapped. The bubbles on the film 40 are removed one by one. Therefore, in the process of electroplating copper to the semiconductor wafer 31, it is possible to prevent or reduce the bubbles from running on the surface 3 to be plated of the semiconductor wafer 31, preventing the copper sulfate solution 13 and the The contact of the plated surface 3 n will not cause bubble defects on the deposited metal film, and the quality of the metal interconnects can be greatly improved. To sum up, the present invention, regardless of its purpose, means, and efficacy, shows its characteristics that are quite different from the conventional technology. It is a major breakthrough in "electrochemical electroplating device and method for removing bubbles". It should be noted that many of the above-mentioned embodiments are merely examples for convenience of explanation. The scope of the claimed rights of the I invention should be based on the scope of the patent application, rather than being limited to the above-mentioned embodiments. -------------- · Install --------- Order i (Please read the notes on the back before filling in the columns on this page)