TW536655B - Liquid crystal display device - Google Patents

Abstract

The present invention relates to a liquid crystal display device, which includes: a pair of at least one transparent substrates, a liquid crystal composition held between the above substrates, plural scanning lines and image signal lines arranged in matrix on an opposed surface of either substrate of the above substrates, and an active element connected to a pixel electrode pairing with a common electrode, the above pixel electrode, the above scanning lines and the image signal lines, which is characterized in that: a connected portion of a protective active element for a electrostatic countermeasure connecting the common electrode and the scanning line, and a connected portion of a protective active element for a electrostatic countermeasure connecting the common electrode and an image signal wiring are in an outside of the area of the gate insulation film locally deposited and the connected portion is completely covered by a passivation film.

Description

V. Description of the Invention (/) The present invention relates to a liquid crystal display device, in particular to a low-cost, wide viewing angle, large-screen active matrix liquid crystal display device of high quality. As shown in the first and second figures, it is a cross-sectional view of an active element substrate in a conventional liquid crystal display device. The conventional active matrix liquid crystal display device forms a gate insulating film (4) and a semiconductor film (5) on the substrate (1) on the substrate (1). y 6), protective film (i 6), and in the process of forming the scan line (2) first, Λ is connected to the drive IC circuit, and the gate deposited on the scan line terminal (3) needs to be removed Insulation film (4). In addition, in order to protect the connection of the wiring of the transistor with static electricity measures, it is necessary to remove the gate insulation film (4. As shown in the first and second figures, the conventional TN * type active element substrate, the entire The manufacturing process requires five mask processes, and the transverse field liquid crystal active element substrate also requires four mask processes. With the enlargement of the liquid crystal display screen, the number of liquid crystal display elements that can be obtained by one glass is also The relative decrease has caused the price of large-scale liquid crystal display elements to become very high. Moreover, the amount of static electricity that occurs when the glass substrate becomes large also becomes very large. The situation of dust adhesion and electrostatic damage is prone to reduce the large-scale liquid crystal display. element In the case of many photomask projects, the number of expensive exposure devices has increased, and the initial investment has also increased relatively. As the area of the clean room in the manufacturing plant has increased, the manufacturing cost (Running Cost) has also increased. . And if the time from the input of the glass substrate to the completion of the active components is not shortened as much as possible, a large number of storage warehouses will be required. 3 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 536655 A7 B7 V. Explanation of the invention (丄) Furthermore, when the glass substrate becomes larger, when the SiNx film and the amorphous silicon semiconductor film are deposited by plasma chemical vapor deposition (C v D), the expansion coefficient is different from that of the glass substrate. Therefore, stress is generated after deposition, which causes the entire substrate to be distorted. Because the stress occurrence rate of the central portion of the glass substrate and the peripheral portion of the glass substrate are different, the dimensional change occurs unevenly throughout the effective daylight region. There is a problem of misalignment between the hoods. The present invention is mainly to provide a solution to these problems, and the object thereof is to provide a method for improving Type liquid crystal display device manufacturing factory investment efficiency and a method for manufacturing a liquid crystal display device with ultra-large size, wide viewing angle, low cost, high yield, etc. [Means for Solving Problems] In order to solve the foregoing problems and achieve the foregoing objectives, the present invention adopts the following methods : The liquid crystal display device includes an active matrix substrate, an opposite substrate opposite to the active matrix substrate, and a liquid crystal layer sandwiched between the active matrix substrate and the opposite substrate; wherein: The active matrix substrate is provided with a scanning signal wiring and an image signal wiring, a thin film transistor formed on each intersection of the scanning signal wiring and the image signal wiring, and a picture connected to the thin film transistor. The pixel electrode and a common electrode having at least a part thereof facing the pixel electrode. Therefore, the method adopted in the present invention is that when the gate insulating film of the thin film transistor is deposited on a substrate, it is only partially deposited on a part containing only effective pixel regions, and the semiconductor layer and the protective layer of the thin film transistor are Laminated film 4 This paper has been used in the national standard (CNS) A4 specification (210 X 297 mm) ------ 1 ----- !! (Please read the precautions on the back 5 ^ (Write this page) IIII Order — — — — — — — — Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A7 ~ ____________ 5. Description of the invention (j) The protective film layer is fully deposited on the substrate. The method 2 adopted by the present invention is that when the gate insulating film and the semiconductor layer of the foregoing thin film transistors are deposited on the substrate, part of the film is deposited on the part containing only the daylight region, and the protective film layer is on the substrate. Fully deposited on the surface 0. The method 3 adopted by the present invention is the gate insulating film and the protective film of the thin film transistor element. When the protective film layer is deposited on the substrate, the semiconductor layer is locally deposited on a portion containing only effective pixel regions. Then, the substrate 4 is fully deposited. The method 4 adopted in the present invention, in the manufacturing method described in the aforementioned method 3, the area of the cover film deposition is wider than that of the gate edge film partially deposited on the region containing only effective daylight. The method 5 adopted in the present invention is to deposit the gate insulating film, the semiconductor layer, and the protective film protective film layer of the thin-film electric crystal element on the substrate, and the partial deposition is on the part containing only the effective daylight region. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the method 6 adopted by the present invention. In the manufacturing method described in the aforementioned method 5, 'make the protective film protective film deposition area more than partially deposited on the gate containing only the effective daylight region. Wider insulation film. Means 7 adopted by the present invention is that the liquid crystal display device manufactured by the manufacturing method according to Means 1 to 6 of the present invention is a protective transistor element for electrostatic countermeasures connecting the common electrode and the scanning line, and connects the common electrode and The aforementioned protective measures for the static electricity countermeasures of the video signal wiring are covered by a protective transistor, such as a protective film. The method 8 adopted by the present invention is the manufacturer according to the methods 1 to 6. _ 5 This paper is used in China National Standard (CNS) A4 size (210 X 297 mm 1 " " '—' 536655 A7- -------------- V. Description of the invention (f) The liquid crystal display device manufactured by the method is a protective transistor element for static electricity countermeasures connecting the common electrode and the 浐 t line, and connecting the foregoing. Common electrode: The protective transistor element for the electrostatic countermeasures of the video signal wiring just described is arranged at two or more sides around the boundary of the gate insulation film deposited locally. Σ Means 9 adopted by the present invention is the manufacturing method according to means i ~ 6 The manufactured liquid crystal display device is a connection part of a protection active element for electrostatic countermeasures connecting the common electrode and the scanning line, and a connection part of a protection active π element for electrostatic countermeasures connecting the common electrode and the video signal wiring. It is arranged outside the area where the gate insulating film is locally deposited. The means 10 adopted in the present invention is that the liquid crystal display device manufactured by the manufacturing method described in means i to 9 is to be bonded to two substrates. A liquid crystal

The frame rubber line (seai) of Cel 1 is arranged on the periphery of the gate insulating film which is locally deposited or outside the region of the gate insulating film, and is located within the region where the cover film is deposited. The method 11 adopted by the present invention is to change the light transmission amount of the photomask to three or more stages, such as complete light transmission, semi-light transmission, and full interruption, so that the positive photoresist film thickness has three or more stages. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the method 12 adopted by the present invention, which is based on the manufacturing method described in Method 11 'its scan line, the semiconductor area of the active element, the image signal wiring, and the day electrode, The light transmittance of each of the cross electrodes and the overlapping step masks constituting the liquid crystal display element is changed by more than three steps, and after the positive photoresist is developed, the photoresist film thickness is changed by more than three steps. Standards apply to China National Standard (CNS) A4 specifications (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A7 B7

V. Description of the invention (r) Means 13 adopted by the present invention is to increase the light transmission amount of the channel mask of the thin film transistor element connecting the video signal wiring and the pixel electrode according to the method described in means 11. After the positive photoresist is developed, the thickness of the positive photoresist film constituting the channel portion of the thin film transistor element is reduced. The method 14 adopted in the present invention is the method described in the method 3, 4, 5, β, or 13 The method is to separate the image signal wiring and the day electrode at the same time to form the η + layer of the channel, and the mask process including this process and the formation of the scanning line is completed by a second mask process. Means 15 adopted in the present invention are to form the image signal wiring and the pixel electrode simultaneously according to the method described in means 1, 2, and 13. After removing the η + layer of the channel portion, the substrate is fully deposited and protected. Laminate a film, and then open a contact hole (contact hole) connected to the driver IC circuit. The method 16 adopted by the present invention is to form the image signal wiring and the drain electrode simultaneously according to the method described in the method 15. After removing the n + layer of the channel, a protective film is deposited on the entire surface of the substrate. After that, a contact hole for the terminal part connected to the driving 1C circuit and a contact hole for connecting the transparent day electrode and the non-electrode electrode are simultaneously formed, and then a transparent conductive film is deposited and the pixel electrode and the terminal electrode are formed. Means 17 adopted by the present invention, after the image signal wiring and the day electrode are formed simultaneously according to the method described in Means 3, 4, 5, or 6, the metal film and n + of the channel portion of the thin film transistor are removed. layer,

7 536655 A7 V. Description of the invention (After that, the protective film is partially deposited on the part containing the effective pixel area. Means taken by the present invention are 1 and 8. After the image signal wiring and the drain electrode are formed at the same time, a transparent conductive film is deposited. When the patterning of the image signal wiring and the pixel electrode is formed, the metal film and the channel portion of the thin film transistor are removed. n + layer, and then the protective film is partially deposited on the part containing the effective daylight region. Means 19 adopted in the present invention are to partially deposit the gate insulating film according to the method described in means 2, 5 or 6. After being deposited on the P site containing the effective daylight region, a semiconductor layer is deposited on the entire surface of the substrate, and after the image signal wiring and the pixel electrode are formed at the same time, the n + layer exposed on the surface is removed, and then a protective film is deposited on the substrate Fully or partially deposited on the part containing the effective daylight region, and in order to form the channel part of the thin film transistor element, the image signal wiring, and the pixel electrode, many The protective film and semiconductor layer of the present invention. In the method 20 adopted in the present invention, the gate insulating film is locally deposited on the part including the effective daylight region according to the method described in the method 丄, 3 or 4, and then is deposited on the substrate. After the semiconductor layer is completely deposited, and the image signal wiring and the day electrode are formed at the same time, the n + layer exposed on the surface is removed, and then the conformal film is deposited on the substrate in full or partially on the part containing the effective day region. After that, the redundant protective film and semiconductor layer are removed to form the channel portion of the thin film transistor, the image signal line, and the pixel electrode. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male) %)

Please read the notes of © © Fill in the page I. Order I Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to print 536655 Α7 ---- Β7 V. Description of the invention The method described in means 19 or 20 'after forming the image signal wiring and the drain electrode at the same time, remove the n + layer exposed on the surface, and then make the protective film be fully deposited on the substrate or partially deposited on the substrate containing effective pixels After removing the unnecessary protective film and semiconductor layer, the transparent pixel electrode is formed in order to form the channel of the thin film transistor, the image signal wiring, and the drain electrode. Means adopted by the present invention 22, After partially depositing the gate insulating film and the semiconductor layer on the portion including the effective pixel region according to the method described in the method 5 or 6, the channel portion of the thin film transistor is formed, and then formed simultaneously. Video signal wiring and pixel electrodes, and after removing the n + layer of the channel portion of the thin film transistor element, Part of the prime region. According to the method 2 or 3 of the present invention, the gate insulating film is partially deposited on the part containing the effective day prime region according to the method described in the means 3 or 4, and then the semiconductor layer is fully formed on the substrate. After deposition, the channel portion of the thin film transistor is patterned, and the image signal wiring and the pixel electrode are formed at the same time. Then, the n + layer of the channel portion of the thin film transistor is removed, and then the protective film is formed. Locally deposited on the site containing the effective daylight region. Means 24 adopted by the present invention is to deposit the gate insulating film locally on the site containing the effective daylight region according to the method described in means 1 or 2. The semiconductor layer is deposited on the substrate in whole or in part on the part containing the effective pixel area, and then the channel of the thin film transistor is formed (Patterning), and the image signal wiring is formed at the same time. This paper applies Chinese national standards ( CNS) A4 size (210 X 297 mm) Please read the back first

Item I »tiling page II Order printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The n-layer of the channel (channel) then deposits a protective film on the entire surface of the substrate, and a contact hole is opened in the terminal portion for connection with the driving IC. In the method 25 according to the present invention, in the method described in the method 5 or 6, the gate insulating film and the semiconductor layer are partially deposited on a portion including an effective daylight region, and then a channel of the thin film transistor is formed. Channel, and then simultaneously forming the image signal wiring and pixel electrodes, and then removing the n + layer of the channel portion of the thin film transistor, and depositing a protective film on the portion containing the effective pixel area, followed by the protective layer A common electrode is formed on the film. The method 26 adopted by the present invention is that after the gate insulating film is locally deposited on a portion containing an effective pixel area, a semiconductor layer and an etching stopper layer (EtchingStopper) are fully deposited on the substrate or partially In order to obtain the n + layer in the ohmic contact area, if it is an ion implantation method, it is only partially implanted in the part containing the effective pixel area; for example, when the layer is deposited by plasma chemical vapor deposition (CVD) , It is fully deposited on the substrate, or it is partially deposited on the part containing the effective daylight region. Means 27 adopted in the present invention refers to the method described in Means 26, in which the image signal wiring and the day electrode are patterned simultaneously to remove the n + layer and the semiconductor layer below the n + layer exposed on the surface. The channel portion of the thin film transistor element, the video signal wiring, and the pixel electrode are formed separately and simultaneously. Means 2 8 adopted in the present invention refer to means 2 6, 2 7 ___ 10 This paper size applies to China National Standard (CNS) A4 specifications ---- (Please read the precautions on the back before filling this page) ·! R · ^^ II —Order 111 — · — ··· # · 536655 A7 V. Description of the invention (< After the image signal wiring and the day electrode are formed at the same time, the protective film is placed on the substrate Full deposition, or partial deposition on the part containing the effective pixel area. Then, in order to connect with the driving IC, the excess protective film, n + layer and semiconductor layer on the connection terminal are removed. Display-day element, the gate electrode of the thin film transistor is arranged in two or more parallel, the channel part of the thin film transistor is also arranged in two or more parallel, attached to two or more respective channel parts The non-polar electrode of (Channel) is connected by the respective daylight electrode. _ Means 30 adopted in the present invention refer to the method of making a liquid crystal display panel according to the methods described in means 1 to 6, and means 11 to 28. Transverse electric field method. The method taken by means 31 means that the liquid crystal display panel made according to the methods described by means 6 and 2 is a simple liquid crystal method, a strongly induced liquid crystal method, an anti-strongly induced liquid crystal method, or a vertical alignment liquid crystal method. Means 3 2 adopted by the employee's consumer cooperative of the Property Bureau to print the present invention refers to the obscure lines of the liquid crystal display element produced by the method described in means 1 to 2 8 according to the means (or an alloy of the inscription) and titanium ( Or titanium alloy) two-layer structure, or three-layer structure of inscription (or Shao alloy), titanium alloy) and indium (or alloy), or inscription (or alloy), chromium (or chromium alloy) and The three-layer structure of the flip (or pin alloy) constitutes a common electrode in the opposite direction to the pixel electrode adopts a single layer structure of titanium (or chin alloy), or consists of titanium (or titanium alloy) and flip (or flip alloy). A two-layer structure 'or a two-layer structure of chromium (or chromium alloy) and indium (or indium alloy).

536655 A7 ^ ----- -B7 ______ V. Description of the Invention (/ 0) The means 3 3 adopted in the present invention refers to the liquid crystal display elements manufactured according to the methods described in means} to 6, and means 1 1 to 2 8 The scanning line is a three-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (or chromium alloy), copper (or copper alloy), and molybdenum (or A three-layer structure composed of molybdenum alloy); the common electrode opposite to the pixel electrode is composed of a single layer structure of titanium (or titanium alloy), or a double layer composed of titanium (or titanium alloy) and molybdenum (or molybdenum alloy) Layer structure, or a double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). Means 34 adopted in the present invention refer to a liquid crystal display device manufactured according to the method described in Means 1 to 28, and the image signal wiring thereof adopts a double-layer structure of titanium (or a titanium alloy) and aluminum (or an aluminum alloy). Or a double-layer structure made of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy), or a double-layer structure made of chromium (or a chromium alloy) and molybdenum (or an indium alloy). The method 3 5 adopted by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to print the present invention refers to a liquid crystal display device manufactured according to the method described in means 1 to 28. The image signal wiring is made of titanium (or titanium alloy), A three-layer structure consisting of aluminum (or aluminum alloy) and titanium (or titanium alloy), or a three-layer structure consisting of titanium (or alloy of titanium) and aluminum (or alloy of aluminum) and molybdenum (or alloy of molybdenum), or Three-layer structure consisting of titanium (or titanium alloy), aluminum (or aluminum alloy), and chromium (or chromium alloy), or consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy) Three-layer structure, or a three-layer structure composed of titanium (or titanium alloy) and chromium (or chromium alloy) and molybdenum (or molybdenum alloy). Means 36 adopted in the present invention refer to the liquid crystal display device manufactured according to the methods described in means 1 to g, which locally limit the deposition area of the gate insulating film to the effective pixel area and the terminals of the video signal wiring Area 12 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 public love) 536655 A7 ______ B7 5. Description of the invention (//) and protection of active components for electrostatic countermeasures. Means 37 adopted in the present invention refer to the liquid crystal display device manufactured according to the method described in Means 1 to 9, such that the distance from the deposition boundary of the gate insulating film to the end of the scanning line terminal portion and the distance from the gate insulating film The distance from the deposition boundary to the end of the bonding terminal portion of the protective active element for electrostatic measures is at least 2 mm. Means 38 adopted in the present invention refers to a liquid crystal display device manufactured according to the method described in Means 1 to 6. It is a continuation part of a common electrode that intersects the scanning line and a common electrode that intersects the video signal wiring. Locally deposited gate insulating film area. Means 39 adopted by the present invention refers to a liquid crystal display panel manufactured according to the method described in means 1 to 28, and its image signal wiring adopts a two-layer structure composed of silicide of titanium and aluminum (or aluminum alloy). Or a two-layer structure composed of silicide of molybdenum and Shao (or Ming alloy), or a two-layer structure of silicide of chromium and aluminum (or aluminum alloy), or a silicide of titanium and molybdenum (or molybdenum alloy) Two-layer structure, or a two-layer structure composed of silicide of chromium and molybdenum (or molybdenum alloy). The effects that can be achieved according to the aforementioned technical means are detailed as follows: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The first picture shows a cross-sectional view of a thin-film transistor element substrate for the conventional Twistnematic liquid crystal method. Because the three-layer film manufacturing method, such as gate insulation film, semiconductor film, and protective film, is fully deposited on the glass substrate, the minimum number of photomask projects is reasonably achieved. However, the entire process of the photomask project requires 5 times. 'Within this limit, the cost cannot be further reduced. As shown in the second figure, the 13 paper sizes of the thin-film transistor element substrate for the liquid crystal mode of the transverse electric field method are applicable to the Zhongguanjia Standard (CNS) A4 specification (21G X 297 mm) " --- Ministry of Economy Printed by the Intellectual Property Bureau's Consumer Cooperatives V. Invention Description (/ >) section. In this case, the gate insulation film and semiconductor film are known to be used in the full-field deposition of a glass substrate in the transverse electric field method, because the method of manufacturing a two-layer film such as a film is not used. (4) (Transparent electrode), (see Figure 4) 4 element electrodes (1 time it can be reduced-2 times the photomask project, the whole project can be 4 surnames. At ㈣ / ⑵, the scan line and the common electrode will not be connected I is also impossible to connect the SI :: image signal wiring to the common electrode. Since the connection hole is formed in the video signal wiring terminal portion, it becomes a bonding electrode (13). Therefore, a 5th photomask must be used within a month. As a countermeasure, the protection transistor '奂 S, no matter which liquid crystal method is used', can not be reduced in yield and can be used in production, if the conventional process is used, the effect of reducing costs will be extremely limited. The means 1 to 9 of the present invention can greatly shorten the process because it is not necessary to provide a connection hole in the terminal portion. Even if the process is shortened, a protective transistor for electrostatic countermeasures can be formed on the substrate in the same way as a known person, so it will not be reduced. Yield. Also, by depositing a thick film gate insulating film with only the minimum necessary area, the stress on the glass substrate can be reduced, so the amount of pattern deformation is reduced. Therefore, the misalignment between the masks can be reduced. The display caused by the deviation is not The phenomenon can also be greatly reduced. Similarly, the misalignment and misalignment between the color filter substrate and the thin film transistor substrate of the counter substrate can also be reduced, so the yield of the liquid crystal Cel 1 process (panel assembly process) can be greatly reduced. By using the method 10 of the present invention, since the CellGap (panel gap) of the frame rubber line area is easy to be uniformized, the defect rate of the liquid crystal cell project (panel assembly process) can be effectively reduced. Please read the note on the back first Matter 1% f Order # 14 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 536655 A7 --- B7 V. Description of the invention (丨 3) Use of the means 1 to 9 and means 1 of the present invention From 1 to 14, protective transistors for electrostatic countermeasures can be formed on thin-film transistor element substrates. The entire work requires only two photomask projects, thereby greatly shortening the project, and achieving a substantial reduction in costs and an increase in production efficiency. The clean room area of the production plant is also expected to be reduced, and the number of expensive cleaning machines, photoresist coaters, developing devices, and exposure devices can be reduced to less than half of the past. The initial investment cost can be greatly reduced. Since the CleanStoker for storage is no longer needed, dust adhesion on large substrates can be reduced, and the yield can be relatively improved. Furthermore, due to the large reduction in cleaning processes, pure water The use amount is also reduced, which greatly reduces the running cost. The combination with cheap printed color filters and light filters can achieve a lower cost active matrix liquid crystal panel (horizontal) than a simple short-array crystal panel (STN model). Electric field liquid crystal method). Therefore, the home television may also be converted from an image tube (CRT) to an active matrix liquid crystal panel. If the method 15 of the present invention is adopted, it can be used to make a small liquid crystal panel. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. If the method 16, 21 of the present invention is used, the conventional Twistnematic liquid crystal panel can be manufactured by using the four mask processes, which can reduce the production cost. If the means 17 and 18 of the present invention are adopted, the overlap area of the gate electrode and the pixel electrode (drain electrode) can be controlled with high accuracy, so that the display unevenness can be reduced greatly and the yield can be improved. If the method 19, 20, 21 of the present invention is adopted, a protective transistor for static electricity countermeasures can be formed on the thin film transistor element substrate. The entire project is only applicable to the Chinese National Standard (CNS) A4 specification (21G) on the basis of three 15 paper sizes. X 297 male f " 536655 A7 B7 V. Description of the invention (#) The mask can be completed by workers and private workers, which can reduce production costs and greatly improve production efficiency. In this project, because the protective film does not cover the entire effective screen, It does not give a large stress to the glass substrate, so it is a manufacturing system with the smallest change in the size of the glass substrate. When the liquid crystal display screen is very large, in the liquid crystal assembly process, when the color filter substrate and the thin film transistor substrate are pressed together, , Which can minimize the alignment and alignment error. In this project, the mask alignment error between the gate electrode and the day element electrode (without electrode) is also unchanged because the stability of the process is very high. Even if the average occurrence rate is small, a high yield can be achieved. For example, by using the means 22 to 25 of the present invention, a protective transistor for electrostatic countermeasures can be formed on the thin-film transistor element substrate, and the whole process can be three to four mask workers. The process can be completed. And this project can also form a common electrode at the end, and the degree of freedom of manufacturing is very large. It is the process with the smallest step difference after the pattern is formed, so it is not easy to cause the disconnection of the wiring. The alignment process after the formation of the alignment film in the assembly process becomes very easy, so that the yield can be maximized. If printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the method 2 6S 2 8 of the present invention can be used on the thin film transistor element substrate. To form a protective transistor for electrostatic countermeasures, the entire project can be completed in only three to four photomask projects. In this project, the thin-film semiconductor layer can be as thin as 500A ', and there is no residual n + layer on the channel part. Therefore, the requirements for the overall uniformity of the substrate during dry money engraving are reduced, and the combination with excimer laser can be easily changed to the PolySi thin film transistor process. The back exposure technology can also be applied to self-integration (Selbu Align_t ) Technology can realize the production of ultra-large liquid crystal daytime. For example, if the method 2 of the present invention is adopted, in the case of ultra-large screens, that is,

536655

As a result of the misalignment locally caused by the substrate size change, there is no change in the capacity formed by the drain electrode and the gate electrode, so that unevenness does not occur on the display screen. By adopting the measures 32 to 35 of the present invention, the impedance of the scanning line can be greatly reduced, and the impedance of the common electrode can also be greatly reduced. In addition, since the thickness of the electrode film of the liquid crystal driving electrode and the daylight common electrode opposed to the liquid crystal driving electrode in the book can be reduced, the alignment processing of the liquid crystal assembly process becomes very easy. Moreover, since the alignment processing density and uniformity can be improved very high, an image quality with good reliability and reproducibility without unevenness can be obtained. By adopting the means 3, 4, 5, and 39 of the present invention, it is possible to prevent the film from peeling off at the boundary portion of the deposition region of the gate insulating film. In particular, the adhesion force of the silicide compound of titanium and high melting point metal to the glass substrate and plasma chemical vapor deposition film (silicon oxide film, silicon nitride film) is very strong, and it is not easy to cause film peeling. In the present invention, especially the peeling of the film after the electrode pattern is formed at the boundary portion of the deposition area is still the biggest problem, which can be solved by limiting the type of metal. The use of aluminum or aluminum alloy for image signal wiring will not cause film peeling but cannot be directly bonded to the n + layer. Therefore, a high melting point metal or a high melting point metal silicide compound layer is required between aluminum and the layer. If the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the method 36 of the present invention, the deposition area of the gate insulating film is enlarged to the area of the video signal wiring terminal or the active component for electrostatic countermeasures. The video signal wiring terminal and the The cross section of the boundary of the deposition region of the gate insulating film disappears. Therefore, the problem of electrode peeling can be greatly reduced, and the yield can be greatly improved. If the method 3 of the present invention is adopted, the glass substrate ruler 17 can be fully guaranteed. The national paper standard (CNS) A4iFr210 X 297 mm is used for weekly use.-~ 536655 V. Description of the invention (from) Wisdom of the Ministry of Economic Affairs The processing accuracy of the printing bureau of the property bureau employee consumer cooperative and the accuracy of the local deposition location of the gate insulating film. Since the gate insulating film deposition temperature of the P-CVD device is about 30 ° C, this value is an important value in consideration of the device's jig deformation and the thermal expansion coefficient. ^ At this value, the scanning line terminal section is comprehensive The gate insulation film is deposited thereon, and the effective joint area with the TAB becomes small, etc., a large number of poor contact phenomenon and uneven horizontal lines of the image will appear. If the means 37 is adopted, poor contact and uneven horizontal lines will not occur. In order to make your reviewers better understand the foregoing objectives and the technical characteristics of the present invention, detailed drawings are attached as follows: (1) Schematic part: The first figure: the conventional vertical electric field method thin film semiconductor substrate A cross-sectional view of a unit pixel. A cross-sectional view of a unit pixel of a conventional transverse electric field type thin film semiconductor substrate. A cross-sectional view of a unit pixel of a transverse electric field type thin-film semiconductor substrate of the present invention. A cross-sectional view of a unit semiconductor element of a thin film semiconductor substrate. A cross-sectional view of a unit semiconductor element of a thin-film semiconductor substrate of a transverse electric field method of the present invention. A cross-sectional view of a unit day element of a field-type thin-film semiconductor substrate. A seventh view: A cross-sectional view of a unit day-element of a longitudinal electric field-type thin-film semiconductor substrate of the present invention. Second view Third view Fourth view Fifth view Fifth view 18 536655 A7 V. Description of the invention (/ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 8: A cross-sectional view of the transverse electric field method element of the present invention. Figure 9: The unit day of the transverse electric field method thin film semiconductor substrate of the present invention Sectional view of the element. Figure 10: A cross-sectional view of the vertical electric field method element of the present invention. Figure 11: A cross-sectional view of the horizontal electric field method element of the present invention. A cross-sectional view of an electric field system day element. The twelfth image is a cross-sectional view of a unit pixel of a He-I-type thin-film semiconductor substrate in the Henglei county of the present invention. A cross-sectional view of a unit thin film of a thin film semiconductor substrate. Fifteenth FIG. 1 A cross-sectional view of a single pixel of a thin material substrate of a longitudinal electric field method of the present invention. FIG. Sectional view of pixels. Figure 17: Sectional view of the unit element of the thin-field conductor substrate of the transverse electric field method. Figure 18: Sectional view of the basic element of the thin-film conductor substrate of the invention of the electric field method. Nineteenth figure: A cross-sectional view of a unit denier of a thin-film semiconductor substrate with a transverse electric field method. A unit drawing of a thin-film semiconductor substrate. A unit of a thin-film semiconductor substrate. A unit of a thin-film semiconductor substrate. A unit of a thin-film semiconductor substrate.

V. Description of the invention (/) Figure 20: A cross-sectional view of a unit pixel of a thin-film semiconductor substrate of the transverse electric field method of the present invention. 20th figure: A cross-sectional view of a unit pixel of a transverse electric field type thin film semiconductor substrate of the present invention. Fig. 22 is a cross-sectional view of a unit pixel of a transverse electric field type thin film semiconductor substrate of the present invention. This is a cross-sectional view of a unit day element of a thin-film semiconductor substrate of the transverse electric field method of the present invention. It is a cross-sectional view of a unit element of a longitudinal electric field type thin film semiconductor substrate of the present invention. This is a cross-sectional view of the light transmission amount adjustment mask of the present invention. This is a cross-sectional view of the light transmission amount adjustment mask of the present invention. This is a cross-sectional view of the light transmission amount adjustment mask of the present invention. This is a cross-sectional view of the light transmission amount adjustment mask of the present invention. This is a cross-sectional view of the positive photoresist after the exposure and development processing of the photomask using the light transmission amount of the present invention. The manufacturing process of the thin film transistor element using the light transmission amount adjustment mask of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 13-Figure 14-Figure 25-Figure 26-Figure 27-Figure 27-Figure 29-Figure 29-Figure 30 Figure 31 is a plan view of Figure 32, Figure 22, Figure 34, Figure 35, Figure 36 and Figure 36 are thin film transistor elements of the present invention. It is a plan view of a thin film transistor element of the present invention. It is a plan view of a thin film transistor element of the present invention. It is a plan view of a thin film transistor element of the present invention. This is a plan view of the scanning electrode and common electrode. It is a cross section of the scanning electrode and the common electrode of the present invention. 20 5. Description of the invention (// FIG. 37, FIG. 38, FIG. 39, FIG. 40, FIG. 41, FIG. 41, FIG. 42 Forty-three figure forty-fourth figure forty-fifth figure forty-fifth figure forty-sixth figure forty-seventh figure forty-eighth figure forty-ninth figure forty-ninth figure forty-fifth figure fifty-first figure fifty-second figure = this "Cross-sectional view of a bright sweep electrode and a common electrode. A cross-sectional view of a clear sweep electrode and a common electrode. 2 A plan view of the video signal wiring and the non-polar electrode of the present invention. It is a video signal wiring of the present invention. Sectional view. Sectional view of the image signal wiring of the present invention. Sectional view of the image signal wiring of the present month. Plane view of the thin film semiconductor substrate of the present invention. Sectional view of the thin film semiconductor substrate of the present invention. It is a plan view of the thin film semiconductor substrate of the present invention. It is a plan view of the layout of the frame rubber wire of the present invention. It is a plan view of the layout of the frame rubber wire of the present invention. It is a protection circuit diagram for the electrostatic countermeasures used by the present invention. For static electricity countermeasures Circuit diagram of the protection circuit. Plan view of the thin-film semiconductor element of the transverse electric field type of the present invention. Plan view of the thin-film semiconductor element of the transverse electric field type of the present invention. Plan view of the protective transistor element for electrostatic countermeasures of the present invention. It is a plan view of the protective transistor element for electrostatic countermeasures of the present invention. Figure 54: It is a plan view of the protective transistor element for electrostatic countermeasures of the present invention. 21 W6655 A7 B7 V. Description of the invention The tenth plan view of the protective transistor element for electrostatic countermeasures of the present invention is a plan view of a transverse electric field type thin film semiconductor element of the present invention. The fifty-seventh figure: is a plan view of a transverse electric field type thin film semiconductor element of the present invention. Fig. 58 is a plan view of a protective transistor element for an electrostatic countermeasure of the present invention. Fig. 59 is a plan view of a protective transistor element for an electrostatic countermeasure of the present invention. Figure 60 of the younger brother ... This is the surface view of the present invention. The figure 60 is a protection transistor for electrostatic countermeasures of the present invention. Element plan view. Figures 11 and 11 are plan views of the thin-film semiconductor element of the longitudinal electric field type of the present invention. Figures 12 and 12 are plan views of the thin-film semiconductor element of the longitudinal electric field type of the present invention. Figure 64: Fig. 65 is a plan view of the protective transistor element for the electrostatic countermeasures of the present invention. Fig. 65 is a plan view of the protective transistor element for the electrostatic countermeasures of the present invention. Fig. 66 is a protective transistor for the electrostatic countermeasures of the present invention. The plan view of the element. 22 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public reply 536655) 5. Description of the invention (w) Figure 67: This is a plan view of the protective transistor element for electrostatic countermeasures of the present invention. Fig. 68 is a plan view of a transverse electric field type thin film semiconductor device according to the present invention. Fig. 69 is a plan view of a transverse electric field type thin film semiconductor device according to the present invention. The seventieth figure is a plan view of a protective transistor element for countermeasures against static electricity of the present invention. The tenth figure is a plan view of a protective transistor element for countermeasures against static electricity of the present invention. Fig. 72 is a plan view of a protective transistor element for countermeasures against static electricity of the present invention. Figure 73 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Figure 74 is a plan view of a longitudinal electric field type thin film semiconductor device according to the present invention. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 75: This is a plan view of a longitudinal electric field type thin film semiconductor device of the present invention. Figure 76 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Fig. 77 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Fig. 78 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. 23 W6655 A7 B7, description of the invention (to) Younger figure 79: This is a plan view of the protective transistor element for electrostatic countermeasures of the present invention. " Ten diagrams " is a plan view of a transverse electric field type thin film semiconductor device according to the present invention. Eighty-first: It is a plan view of a transverse electric field type thin film semiconductor device of the present invention. Fig. 82 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Fig. 11 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Fig. 14 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Fig. 15 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Eighteenth /. Fig. · Is a plan view of a transverse electric field type thin film semiconductor device according to the present invention. Fig. 87 is a plan view of a transverse electric field type thin film semiconductor device according to the present invention. The eighty-eighth figure is a plan view of a protective transistor element for electrostatic countermeasures of the present invention. Fig. 89 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. Fig. 90 is a plan view of a protective transistor element for countermeasures against static electricity according to the present invention. ------ I ----- «Installation (please read the precautions on the back before filling out this page) ---- Order --------- # Employee Cooperatives of Intellectual Property Bureau Printed 24 536655 A7

V. Description of the Invention (4) Figure 91 is a plan view of the protective transistor element for electrostatic countermeasures of the present invention. Fig. 92 is a plan view of a partially deposited region of the gate insulating film of the present invention. Fig. 92 is a plan view of a partially deposited region of the gate insulating film of the present invention. Fig. 94 is a plan view of a light transmission amount adjusting mask of the present invention. Fig. 95 is a plan view of a light transmission amount adjusting mask of the present invention. Fig. 96 is a plan view of a transverse electric field type thin film semiconductor substrate of the present invention. Fig. 97 is a cross-sectional view of a unit pixel of a transverse electric field type thin film semiconductor substrate of the present invention. Fig. 98 is a cross-sectional view of a unit pixel of a transverse electric field type thin film semiconductor substrate of the present invention. Fig. 99 is a cross-sectional view of a unit pixel of a transverse electric field type thin film semiconductor substrate of the present invention. Fig. 100 is a plan view of a transverse electric field type thin film semiconductor device according to the present invention. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. F 0-Figure: This is a plan view of the thin-film semiconductor device of the transverse electric field method of the present invention. The first 0-Fig. Is a cross-sectional view of a unit element of a transverse electric field type thin film semiconductor substrate of the present invention. Fig. 102 is a cross-sectional view of a unit element of a transverse electric field type thin film semiconductor substrate of the present invention. 25 A7

V. Description of the invention (j) Printed by the Intellectual Property Office of the Ministry of Economic Affairs and the Agency for Cooperatives. Figures ~ 0 4: This is a cross-sectional view of a unit pixel of a horizontal electric field type thin film semiconductor substrate of the present invention. Fig. 0 ~ 5: A cross-sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention. Fig. 106 is a plan view of a thin-field semiconductor device using a transverse electric field method according to the present invention. Fig. 0-7 is a plan view of a transverse electric field type thin film semiconductor device according to the present invention. (2) Part of drawing number: (1) ··· Glass substrate (2) ··· Scan line (gate electrode) (3). ·· Scan line terminal (4) ··· Gate insulating film (5) ... Thin-film semiconductor layer (Non-dope (non-doped) layer) (6) ··· Doped η + semiconductor layer (7) ··· Video signal wiring (8) ... Drain electrode (9 ) ... Video signal wiring terminal section (1 0) ... Day element electrode connection hole (1 1) ... Scan line terminal connection hole (1 2) ... Video signal wiring connection hole (1 3) ... Scan line terminal driver ic bonding electrode (transparent electrode) (1 4) ... Pixel electrode (transparent electrode) (1 5) ... Video signal wiring terminal part drives π-connected lightning technology, σ electrode (transparent 26) This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) 536655 A7 V. Description of the invention (<) Electrode) Protective film k electric field type liquid crystal drive electrode (day element electrode) Transverse electric field type common electrode scan line terminal driver 1 ; Bonding electrode (metal electrode) insulating film under the scanning line

Etchingstopper Quartz glass substrate for insulating film mask Semi-transparent mask area Semi-transparent film area mask Metal (Cr or Mo) Shirt like h-number wiring mask Completely shielded area Drain electrode mask Completely shielded area Transistor channel part half Semi-transparent film photoresist UV exposure in the crystal channel portion of the transparent area completely shields the developed film thickness of the photoresist in the semi-transparent area. Printed by the consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 16). (17). (18). (19). (20). (21). (22). (23). (24). (25). (26). (27). (28) (29). (30). (31). (32). (33). (34). (35). (36). (37). (38)., The first layer of cat line (Ming Or ming alloy) The second layer scan line (top cover (cap) electrode) The first layer common electrode (aluminum or aluminum alloy) The second layer common electrode (daylight common electrode) • The second layer lower scanning line • the second Scanning line of the upper layer 'paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X: 27 V. Description of the invention (4) ((II) ...) Common electrode of the lower layer of the second layer (pixel common electrode) .. .Common electrode on the second layer (pixel common electrode) ) 丄) ··· Lower scan line (4?; ··· Copper or copper alloy scan line (4 3) ···················································· Common to steel or copper alloys Electrode (4 5) ... Common electrode of the lower layer 4 6) ... Common electrode of the upper (cap) (common electrode of the day) (4 7) ... The cut-off position of the scanning line and the common electrode (4 8 ) ··· Cut position of video wiring (4 9) ··· Lower video signal wiring (5 0) ··· Low impedance video signal wiring (5 1) ··· Upper cover (cap) video signal wiring (5 2). &Quot; Etchingstopper image signal wiring (5 3) ... local deposition area of gate insulation film (5 4) ... local deposition area of cover film (5 5) ... protective active element for static electricity countermeasures (5 6 ) ... Common electrodes around the effective pixel area (5 7) ... Liquid crystal Cell frame adhesive wire (5 8) ... Thin film carved area (5 9) of the thin film transistor channel section ... Semiconductor layer A around the effective pixel area ... Gate The distance from the insulation film deposition boundary to the end of the scanning line terminal B ... The distance from the cover film deposition boundary to the end of the scanning line terminal C ... The gate insulation film deposition boundary to the static electricity countermeasures Active element 28 Order Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed from a paper of a consumer co-operative society Applicable to China National Standard (CNS) A4 (210 x 297 mm) 536655 Printed by the Consumer Intellectual Property Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs in A7, Invention Explanation (j?) The distance of the end of the joint terminal part (60) ··· Common electrode terminal part—as shown in the second, fifty, and fifty-fifth figures, it is the first embodiment of the present invention: Examples of cross-sectional and plan views. Mainly on a glass substrate ⑴ = after the cat line (2) (gate electrode) is sequentially formed on the surface, the local insulation 臈 (4), amorphous conductor film (5), and n + amorphous stone film 6 are deposited locally. ), And the deposited scanning line terminal portion (3) exposes the metal electrode, and in order to form the image signal wiring (7), the liquid crystal driving electrode (17, and the metal used to join the scanning line terminal portion (3) at the same time) The electrode (work 9) 'is a method of depositing a metal film by the method of slitting. Using the method described in FIG. 30 and the methods 11 and 13 to form a thin-film transistor using only one photomask. The channel part of the element (5), and the excess metal film and n + layer are removed from the channel part. The photomask used in this process is shown in Figure 27 and Figure 28, and its light transmission amount is three stages The above changes. The cross-sectional view of the transistor element channel portion of the photomask is shown in Figures 25 and 20, and the positive photoresistance cross-section structure after exposure using this photomask is shown in Figure 29. The resolution of the exposure device used for thin-film semiconductors is about 2 ~ 3 // m, so it is produced as the twenty-fifth Figure, twentieth = In the photomask structure shown in the figure, a pattern with a resolution of about 1/10 to 1/5 is used to adjust the average light transmission. With a line width of 〇2 ~ ^ 5 #, The gap between the lines is 0.5 ~; a semi-transparent area (23) is formed on the photomask. For the photomasks shown in Figures 26 and 28, a silicon nitride film can be used to make a semi-transparent Light area film (24), mainly. «Installation -------- Order --------- (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A7 ------- B7___ V. Description of the invention) To change the composition ratio of silicon and nitrogen, freely adjust the penetration of ultraviolet light (uv). As shown in the twenty-ninth figure, the positive photoresist film thickness (3 0) of the unexposed portion is ι · 2 ~ 2. 0 // m, and the positive photoresist thickness of the exposed semi-transmissive area is thick (3 1) It is about 0.05 ~ 0.2_. It is mainly based on the wet processing of the metal layer of the n + layer, leaving the necessary metal layer, and then the diluted fluoric nitric acid can be used to remove the n + layer and no ions. The implanted semiconductor layer can also be dry-etched to remove the n + layer and the semiconductor layer without ion implantation. The thin positive photoresist remaining in the semi-transparent region film (2 4) of the channel portion of the thin film transistor element can be plasma Ashed. The metal layer and the n + layer of the channel portion are removed by the same wet etching and dry etching as before. Finally, the protective film is partially deposited locally to complete the active element substrate. In the whole project, only the secondary mask project is used. As shown in the sixth figure, it is a cross-sectional view of the second embodiment of the present invention. As shown in the first embodiment, the cover film (16) is finally deposited on the entire surface I of the substrate, and a concealed wire terminal is opened. In the method of manufacturing the connection hole of the external part, only three photomask processes are required in the entire method. As shown in the fourth figure, 'It is the cross-sectional structure of the third embodiment of the present invention. In the first embodiment, the concealment line (2) and the common electrode (work 8) are the same as the mask process of the metal material at the same time. Formation; in this embodiment, after the common electrode is first formed at H, that is, the lower layer insulating film (20) is locally deposited, the photomask project is performed three times in the whole project, from the common electrode (18) and the scan The short circuit caused by the bad pattern of the I line (12) can be greatly reduced, so the yield can be greatly improved. As shown in the fifth figure, it is a cross-sectional structure of the fourth embodiment of the present invention, (please read the precautions on the back before filling this page)

ϋ n ϋ I ^ -r ° J «1_ι ϋ · ϋ. ^ 1 I # 30

V. Description of the invention (1) The third embodiment is the same, and its scan line (formed at the same time, a pass private spring # _ /, the common electrode (1 8) is not a common electrode (: L 8). To open this, from -Tong Lei i / 'Λ in the whole project three times. By "SO * Wang Yisuo" short circuit can be greatly reduced, so the material of the pendulum opening and the electrode can be freely lifted. The reason for choice is to increase the degree of freedom of the manufacturing process. ^ Seven: Shown is the cross-sectional structure of the fifth embodiment of the present invention. All the examples shown by the four members are liquid crystal display modes of the transverse electric field method ^ and this implementation For example, it is applicable to the liquid crystal display mode of the vertical electric field method (tn method, vertical alignment method, Qiangfeng Xueguang ~ 75 $ pen-through method, anti-strong electric induction method). It is used to form the image signal wiring (7) and the drain electrode (8), and a protective film (16) is deposited. The protective film (16) on the drain electrode (8) is removed after opening " and then connected to a hole (1 Q), and finally a transparent film is formed. Pixel electrode (14). The photomask project has been performed four times in the whole project. As shown in Figures 56 to 61, it is the present invention. The plan view of the sixth embodiment is the same as the third and sixth views. The difference from the first to fifth embodiments is that the process shown in the thirty-first embodiment is not used, and the image signal is formed for the same purpose. After the wiring (7), the liquid crystal driving electrode (丄 7), and the scan line terminal portion are bonded to the metal (i 9), after the metal film is deposited and formed, the remaining portion of the channel portion of the thin film transistor is removed. Metal film and n + layer. In contrast, in this embodiment, after the metal film is deposited, the metal film and the n + layer in the channel region of the thin film transistor element are removed, and then the (Patterning) image signal wiring (7), Liquid crystal 31 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ------------- !! Packing-(Please read the precautions on the back before filling this page ). Printed clothing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 V. Description of the invention ㈠Ο) The driving electrode (17) and the metal wire (19) on the terminal of the scan line.-As shown in Figure 8 The three figures are sectional views of a seventh embodiment of the present invention and The top view is mainly formed by turning the cat wire (2) into the gate insulating film (4), the amorphous semiconductor film (5), and the η + amorphous stone (film (6) such as the ninety-second and ninety As shown in the three figures, local deposition is performed. After the deposition, the terminal portion (3) of the hidden wire is exposed to the metal electrode. Then, in order to form the image signal wiring (7) and the liquid crystal driving electrode (q7) at the same time, sputtering is used. (Sputtering) method to deposit a metal film. The metal film is processed by wet etching or dry etching (Patterning), and the Π + layer without the metal film portion is also removed by wet etching or dry etching, and then on the substrate (1) A cover film (16) is fully deposited on the top, in order to separate the channel portion of the thin film transistor element, the image signal wiring (7) and the liquid crystal drive electrode (1 7), the cover film (丄 6) and the amorphous portion of the unnecessary area will be removed. Silicon semiconductor film (5). The photomask project used in the previous embodiment was used three times in the whole project. The ninth picture printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is a cross-sectional view of the eighth embodiment of the present invention, which mainly uses the interlayer insulation film (4) as shown in Figures 92 and 93 as local After partial deposition, the amorphous layer is fully deposited on the substrate (1); the semiconductor film (5) and the n + amorphous silicon film (6) are formed, and then the image signal wiring (7) and the liquid crystal driving electrode (1 7) are formed. 'The protective film (16) is fully deposited on the substrate (1). In order to separate the channel portion of the thin-film transistor element, the image signal wiring (7) and the liquid crystal drive electrode (1 7), the protective film of the unnecessary area will be removed ( 16) and an amorphous silicon semiconductor film (5). At this time, cover the cover film (16) and amorphous of the electrode of the concealed wire terminal (3); ^ half 32 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 5. Description of the invention ($ /) The conductive film (5) is also removed at the same time, and the protective layer m (16) is not completely deposited, and only a partial partial deposition is also possible. (1) As shown in the tenth figure, it is a cross-sectional view of the ninth embodiment of the present invention. After the common electrode is first formed (the same as the third embodiment), the local and partial insulation film is formed. (20), the subsequent process steps are exactly the same, and the photomask project used in the whole health process is 4 times. 'Through this, the common electrode (丄 8) and the scanning line ⑵: shape ( The bad conditions will be greatly reduced, so the yield can be greatly improved. As shown in Figure 12, it is a cross-sectional view of the tenth embodiment of the present invention. The fourth embodiment of the rabbit is the same, and a common electrode (18) is finally formed. _, F in: The protective film (16) in this embodiment is not covered in the effective drawing area, so the Jiawei section of the amorphous dream layer is exposed, so the exposed = layer section is treated with Ashing and other oxidation And make it an insulating film = as shown in the tenth figure, the seventy-fourth to seventy-nineth figures, the cross-sectional view and the plan view of the present embodiment-this embodiment is applicable to the liquid crystal display mode (TN # type, vertical alignment method, strong: and anti-strong electric induction method). It first forms a scan line (2), and then, as shown in Figures 92 and 93, the gate insulating film (4), the amorphous silicon semiconductor film (4), and the amorphous silicon semiconductor film ( 5) x, Shen Jing silicon film (6), followed by a comprehensive deposition of metal film, + + (Patterning) image signal wiring (γ) and drain electrode (8), η + to remove the area without metal film After the amorphous silicon film (6) was printed on the substrate, 536655 printed the clothing A7 B7 of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (j〆)) A protective film (16) was deposited on the entire surface, followed by a separation The channel part of the transistor element, the image signal wiring (7), and the drain electrode (8), the protective film (16) and the amorphous silicon semiconductor film (5) of the unnecessary area are removed. At this time, the drain electrode is also removed. (8) Excessive protective film (i 6) on the electrode of the scanning line terminal (3) and unnecessary protective film (i 6) on the electrode of the video signal wiring terminal (9) i 6), and finally formed a transparent pixel electrode (14). However, the mask method used in the whole method is four times. As shown in the eighth embodiment, a method for depositing an amorphous stone semiconductor film (5) and an n + amorphous stone film (6) on the substrate (1) is also possible. As shown in the thirteenth figure, the sixty-fourth to sixty-seventh figures, the ninety-seventh figure, and the -0 0 to -0- figures, they are sectional and plan views of the twelfth embodiment of the present invention. After forming a cover line (2) on the substrate (work), as shown in Figures 92 and 93, the gate insulating film (4), amorphous Shi Xi semiconductor film and _ day ② Shi Xi film, then fully deposit a metal film on the substrate (1), shape the image h wiring (7) and the liquid crystal drive electrode (17), and then remove the n + layer and non-metal part After crystallizing the silicon layer, a transparent conductive film or a titanium-based metal film (13) is completely deposited on the substrate 接着, and then the thin film transistor is removed for the purpose of electrically separating the image signal wiring (7) and the liquid crystal driving electrode (1). The metal layer of the element channel part and the n + layer of amorphous stone layer, and finally = a locally deposited protective film (16). Among them, as shown in the ninety-seventh figure, the first factory 0 0 and -0-, the transparent conductive film is fully deposited on the substrate (U after the image signal wiring (u and the electrode) is formed ------- ------ Equipment -------- Order --------- (Please read the notes on the back before filling out this page) 34 536655 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 5. Description of the invention ())) After the metal film (1 3) or the silicide compound of high melting point metal is formed, the image signal wiring (7) and the liquid crystal driving electrode (1 7) are formed, and then the channel is removed. Partially redundant metal layer and n + layer are locally deposited after the protective film (16). As shown in FIG. 14, it is a cross-sectional view of the thirteenth embodiment of the present invention. The steps up to the deposition of the protective film (16) are exactly the same as those of the twelfth embodiment. 1) After fully depositing the protective film (16) on the top surface, a connection hole (11) is formed in the sweeping wire terminal portion (3) and the video signal wiring terminal portion, and the redundant protective film 16 deposited on the terminal portion is removed. As shown in Fig. 98, it is a sectional view of a fourteenth embodiment of the present invention. As in the fourth embodiment, the illiterate line (2) and the common electrode (; [8) are formed separately in different ways. At first, the common cat electrode (2) is formed first, and then the common electrode (18) is formed at the end of the process. ). It has used a total of four mask projects in the whole project. As shown in Figure 99, it is a sectional view of the fifteenth embodiment of the present invention. Similar to the third embodiment, the scanning line (2) and the common electrode (18) are not formed at the same time. After the common electrode (丄 8) is first formed, the underlying insulating layer (20) is locally deposited. The method described above uses a total of four photomask projects during the second pass. As shown in Figure 15 and Figures 62 to 67, it is a cross-sectional view and a plan view of a sixteenth embodiment of the present invention. The first one is the same as the one shown in Figure 92. The gate insulation film is formed by a partial partial deposition method (4), amorphous silicon semiconductor ------------- installation -------- Order --------- (Please read the notes on the back before filling out this page) 35 536655 A7 V. Description of the invention n + non-Βθ_ film (6) 'Next on the substrate (1) Fully deposit a gold film on top to form the image signal distribution 飧 r ^ nw (7) and the electrode without electrode, and then deposit a transparent conductive film on the i-side of the substrate to form the image signal wiring day element electrode (14), and then Remove the thin film transistor's channel /, evening = metal layer and n + layer 'and finally deposit the protective layer film (1 x λ ~ example liquid crystal display mode which is similar to the vertical electric field mode (τ mode, two direct alignment mode, strong induced electricity) Liquid crystal method, anti-power induced liquid crystal method) Don't use the three masks in the whole project, such as the sixteenth figure, one hundred and sixty-seven figure and eighty-second to eighty Printed by the Consumers' Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs, the five pictures are cross-sectional and plan views of the seventeenth embodiment of the present invention. After forming the cat line (2), they are shown in the ninety-second and ninety-third drawings. The gate insulation film was formed by a partial partial deposition method (4 ^ amorphous semiconductor film (5) "amorphous (6)", followed by forming the amorphous channel to form a channel portion of the transistor, and thereafter On the substrate (丄): a metal film is deposited on the surface to form the image signal wiring (7) and the liquid crystal driving electric β (17). After removing the η + layer of the channel portion of the anode, the local protective film (16 ). In the case of the sixteenth figure, the liquid crystal driving electrode (17) shown in FIGS. -06 and -07 does not have an amorphous layer in the lower part. There are also the 102nd figure and the 80th and 8th. The liquid crystal driving electrode shown in Fig. 11 ^ 17) Although there is amorphous stone in the lower part, it can still be made in exactly the same process. There are three photomask projects in its entire project. As shown in Fig. 17 and 105 The figure shows a cross-sectional view of the eighteenth embodiment of the present invention. Until the protective layer m (process 6) is deposited, Which process steps

x 297 mm) ------------- Λ Μ -------- ^ --------- (Please read the note on the reverse side before filling in this Page) # 536655 Description of the invention) Exactly the same as the seventeenth embodiment. In this embodiment, after the protective film (16) is fully deposited on the substrate (丄), it is attached to the cat wire terminal portion (3) and After forming a connection hole (worker) in the video signal wiring terminal portion (9), t remove the excess protective layer (16) deposited on the terminal portion. The aforementioned process steps used a total of four mask processes throughout the project. As shown in the tenth figure and the third figure, t is a nineteenth embodiment of the present invention. It is the same as the third embodiment, except that the cat line (% and the common electrode (18) are not formed at the same time, the common electrode (18 = is formed first, that is, the underlying insulating film (20) is locally deposited, and the rest The dressing process is the same as in the eighteenth embodiment. In the case of the eighteenth figure, there is no amorphous stone layer in the ΓΓ sub-light part, and there is amorphous in the lower part of the electrode ... The electrode ( The structure shown can still be made in exactly the same process. The second figure is a cross-sectional view of the example shown in Figure 19 and Figure 104. The same as the fourth embodiment, the ten implementation pole (18) is not formed at the same time. At the beginning, after 2 I and common power-on, a common 'pole two = line (2) is formed at the end of the process step. A total of four photomask processes are used in the process. And in 8), its full-motion electrode (1 7) Where there is no non-graph in the lower part, the liquid crystal is driven, and the structure shown in the ninth figure and the fourth figure of the -0th figure of the liquid crystal driving electrode (17) can still be a layer; but the tenth is like the twentieth Figures and the eighty-sixth to ninety-same processes. Sectional and plan views of the eleventh embodiment. Zhang's first b-scale fresh (iv)

Please read the notes on the back & before you fill out the page of I. Order I printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A7 B7 printed by the Consumer ’s Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs After the scanning line (2) is formed, after forming the scanning line (2), the gate insulating film (4) is formed in a partial partial deposition manner as shown in Figures 92 and 93. , An amorphous silicon semiconductor film (5) and an etch stopper (2 1), the deposited scanning line terminal portion (3) exposes its metal electrode, and then the plan views as shown in Figures 86 and 87 The inner part of the scanning line (2) (gate electrode) leaves an etching stopper (Etchingstoopper) (21) only in the region where the transistor channel portion is formed. In other regions, except for the effective daylight region Except for the peripheral semiconductor layer (59), all other Etching Stop films are removed, and then in order to obtain an ohmic contact, an n + amorphous silicon layer or an n + microcrystalline silicon layer is locally deposited. In addition, only the effective daylight region and the static protection countermeasures of the electric solar heliosphere region are implemented in IonShowerDoping or Ion Imp lan tat ion (ion implantation), and ohmic contact can also be obtained. The electrode (1 7) fully deposits a metal film on the substrate (1), and after the image signal wiring (7) and the liquid crystal drive electrode (1 7) are formed, the excess n + layer and the amorphous silicon layer are removed, and finally the localized Deposit the protective film (16). In this process, the final protective film (16) is not absolutely necessary, so the protective film project can be omitted. The aforementioned process used a total of three photomask projects in the whole process. As shown in the twenty-first figure, it is a cross-sectional view of the twenty-second embodiment of the present invention. The process steps until the protective film (16) is deposited are exactly the same as the twenty-first embodiment. In this embodiment, After the protective film (16) is fully deposited on the substrate (1), a connection hole (1 1) is formed in the scanning line terminal portion (3) and the video signal wiring terminal portion (9), and the terminal portion is formed. 38 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the back of the precautions to fill out this page) 0

1111111 I I I I I — II #-536655 V. Description of the invention (y) Excessive protective film (1 6) is deposited on the dangerous soil ^ ϋ "and removed. It used a total of four mask projects throughout the project. The use of π Τ /, 1 is shown in the twenty-second figure, which is the present — 1¾. _ _ ^ The cross-sectional view of the twelfth embodiment is the same as the third embodiment of the third embodiment, scanning the soul 0 ^ , ▼ The field line (2) and the common electrode (i 8) are not formed at the same time. After the jl transmission belt has not formed the common electrode (1 8), the underlying insulating film of the scanning line is locally deposited. — Peck pancreas Q 2 〇), the rest of the manufacturing process is the same as that of the second embodiment, full-scale shoes Φ ± L company m Zhu Ning used a total of four mask projects. As shown in the second = three figures, it is a sectional view of the twenty-fourth embodiment of the present invention. As in the fourth embodiment, the scanning line (2) and the common electrode "8" are not formed at the same time. The scan line (2) is formed first, and then the common electrode (18) is formed at the end of the manufacturing process. The photomask process is used four times. As shown in FIG. 24, it is a cross-sectional view of the twenty-fifth embodiment of the present invention. This embodiment is suitable for a liquid crystal display mode of a vertical electric field mode (tn mode, vertical alignment mode, strong induction). Liquid crystal method and anti-strongly induced liquid crystal method). After forming the image signal wiring (7) and the drain electrode (8), a transparent conductor film is fully deposited on the substrate (1) to form a transparent pixel electrode (14). Partially deposited protective film. The photomask project was performed 4 times in the whole project. As shown in Figures 21 to 34, it is a plan view of the twenty-sixth embodiment of the present invention. The gate electrode (2) of the thin-film transistor is formed in two channels and parallel to each other, and the channel region of the thin-film transistor is also formed in one channel and parallel to each other (overlapping the diagonal lines on the foregoing gate electrode (2)) Part), the drain electrode (8) is One is in the middle, and 39 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) Please read the notice on the back and fill in the page I w IIIIII Order printed by the employee ’s consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () /) Connected to the liquid crystal drive electrode (not shown). The aforementioned method can be applied to the third, eighth, tenth Thin-film transistor elements in the form shown in Figures 3, 16, and 20. According to this structure, even if a misalignment between the gate electrode and the drain electrode occurs, the capacity of the drain electrode is almost the same. Changes will occur. As shown in Figures 25 to 30, it is a cross-sectional view and a plan view of the twenty-seventh embodiment of the present invention. The one shown in Figure 25 is a metal material (2 5) to produce light An embodiment of a mask for a semi-transparent region (2 3), which is suitable for making a photomask embodiment of a transistor channel region, such as any shape that can uniformly control the amount of light transmitted by the UV light in the channel region (Patter n) Both. As shown in Figure 26, a photomask is deposited on the quartz glass substrate (2 2) for the photomask, which can uniformly absorb UV light and only absorbs a necessary amount of a translucent film (2 4). Sectional view. As the material of the semi-transmissive film (2 4), a nitride film that can be deposited by a plasma CVD device is preferred. By changing the mixing ratio of Ml, I, and NH3, the UV light can be freely and uniformly controlled. Even if UV is irradiated for a long time, the absorption amount of 透光 ν by the translucent film (2 4) is not changed. As shown in FIG. 28, the υν absorption film is suitable for the transistor. The embodiment of the photomask in the channel area is a semi-transparent film (29) provided between the photomask shielding areas for making the image signal wiring and the drain electrode, respectively, to form a transistor channel portion. As shown in Figure 29, the photoresist cross-sectional view of the positive photoresist during the development of positive photoresist is developed using the photomask structure shown in Figures 15 and 26, which shows that the photomask is completely shielded and translucent The positive photoresist film thickness (31) (32) below, after adjusting the semi-transmittance amount, the positive photoresist film thickness in the semi-exposed area and the non-exposed area can be freely controlled. For example, the thirty-ninth paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the precautions on the back before filling this page). -------- Order --- ------ # 536655 A7 V. Description of the invention (▽) As shown in the figure, it is the process flow when the photoresist process of the present invention is used to form a thin film transistor element. As shown in the twenty-fifth to thirty-eighth drawings, it is a sectional view and a plan view of the twenty-eighth embodiment of the present invention. First, as shown in Figure 35, in order to reduce the impedance of the sweeping seedling line as much as possible, the materials of the Ming series or steel series are used: such as the first layer of the sweeping material (3 3) and the common electrode (3 5 ) Can be made of aluminum or alloy material, so that the pixel electrode (36) facing the liquid crystal drive electrode among the common electrodes has no problem even if the resistance is high. Considering the alignment process, the film thickness of the pixel common electrode (36) and the liquid crystal driving electrode is preferably as thin as possible. In the case of Shao series materials, a metal cap is used to prevent H ^ lrock of aluminum, and in the case of copper series, in order to improve the adhesion with the glass substrate, a titanium (Ti) series or a button (Ta ) Series, silicide compounds of chromium-based metals or high melting point metals. To prevent oxidation, a metal cap (34) must be used. Aluminum and copper metal caps use high melting point metal series or high melting point metal silicon compounds. From the cross-sectional structure shown in Figures 26 to 38, it can be seen that the common day electrode (3 6) is opposite to the liquid crystal drive electrode (3 6) than the concealed line (3 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 When the film thickness is thin, the alignment density during alignment processing is high, and the alignment force of the liquid crystal molecules is stronger. When the film thickness of the common electrode (36) becomes thicker, the tip of the alignment cloth cannot move in a linear motion parallel to the rotation direction. 'The alignment direction of the liquid crystal molecules is disturbed, and the alignment stability of the liquid crystal molecules is changed. low. Figures 29 to 42 are sectional and plan views of the twenty-ninth embodiment of the present invention. Among them, the thirty-ninth picture is the image signal wiring (7) 41 This paper ruler applies the Chinese National Standard (CNS) A4 specification (21G X 297 mm 536655 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Explanation (+.) And the plan view of the electrode (8), in which the sectional view of the non-electrode is shown in Figures 40 to 41. When the image signal wiring crosses the gate insulating film, amorphous silicon semiconductor At the boundary of the deposition area of the film and the cover film, due to the difference in the thermal expansion coefficient of the underlying film and the difference in the adhesion force, bad phenomena such as disconnection of the image signal wiring (4 8) or film peeling occur at the boundary of the deposition area. According to the present invention, The lower-layer video signal wiring (49) uses a titanium series metal, a chromium series metal, or a petrified compound of a melting point metal, which can greatly reduce the aforementioned disconnection and film peeling. For example, forty-third to forty Figure 5 is a plan view of the thirtieth embodiment of the present invention. The deposition area of the protective film (54) is wider than the deposition area of the gate insulating film (53). 5 5) was Formed on both sides of the effective day element, the joint area of the common electrode (56) and the image k-number wiring (7) and the joint area of the common electrode (56) and the scanning line (2) exist in the gate insulating film (5 3) outside the deposition area, and the protective active component (5 5) for electrostatic countermeasures and the aforementioned bonding area are completely covered by the protective film (54). As shown in the figure, when the gate insulating film (53) is deposited under the terminal portion (9) of the image signal wiring, the chance of disconnection of the image signal wiring (7) will be greatly reduced. From the terminal portion of the scanning line (3) The distance (B) from the end to the deposition boundary of the gate insulating film (53) and the distance (A) from the end of the scanning line terminal portion (3) to the deposition boundary of the cover film (54) Requires more than 2ram. The distance from the deposition boundary of the same 'gate insulation film (5 3) to the end of the protective terminal (5 5) for the terminal of the static electricity countermeasure (C) is also 42. This paper size applies Chinese national standards ( CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling this page) 0 Pack ---- # 五 、 Explanation of the invention (4 丨) = more than 2 coffee. When the aforementioned distance is less than 2 and less than, the yield of the closed-electrode insulating film is increased, as shown in Figures 46 and 47. = 7. The frame winch ("7 is rounded: attached to the two substrates: on the surrounding border of the closed-electrode insulating film (5 3) or outside the deposition area of the closed-electrode insulating film (inside.)" And is located in the guard. The fourteenth and ninety-fifth drawings of the deposition area of the layer film (54) are the thirty-second plan view of the present invention. The ninety-fourth chart is a photomask for forming a mask line and should be wired. A semi-transparent position is arranged at the intersection with the scanning line. The mask shown in Figure 95 is the channel area of the element, which is connected to the liquid crystal drive electrode and the transparent book. Light transmitting film (24). Using the exposure of this photomask: when the thickness of the positive photoresist in the part where the two light films (2 4) are set is changed to ^ =, it makes super one possible. With this in mind, the photomask shown in Figure 25 is used instead of the semi-transparent film. The intersection of the common electrode and the image signal wiring can also be adapted. The plane signal wiring (7) of the thirteenth embodiment is alternately connected in common. Two: "and" and the image are located at the pole for local deposition. (5 j part is 536655 A7

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (Bull >) If the present invention is applied to the entire project of the active component substrate, the number of photomask projects can be greatly reduced to 2 to 3 times. Reduce the area of the clean room, and the number of exposure devices, cleaning devices, photoresist related devices, and dust-free storage warehouses can be greatly reduced, and the initial investment amount and the operating cost of the workshop can be greatly reduced. Engineering, easy quality management, easy to improve yield. Since the production efficiency can be greatly improved, the price of the liquid crystal display panel can be reduced. In addition, the gate insulating film with the maximum film thickness is locally deposited, which can uniformize the stress occurring on the glass substrate. Therefore, it is not easy to produce abnormal dimensional changes after the glass substrate is cut. The alignment and alignment error of the crystal substrate can also be reduced. Furthermore, with the transistor structure of the present invention and the protective transistor for countermeasures against static electricity, even if an alignment error occurs between the photomasks, display unevenness does not occur, so that a liquid crystal panel that is strong against static electricity can be manufactured. With the common electrode structure of the present invention, it is possible to greatly reduce misalignment 'and also to significantly reduce the disconnection of video signal wiring. In addition, the scanning wiring uses copper 'to realize a 40-inch large-screen LCD panel. The lower layer of the video signal wiring uses a titanium-based metal or a high-melting-point metal silicide compound to effectively prevent the film from peeling off, and even if it is oversized, it will not reduce the yield. 44 This paper size is compatible with CNS A4 (21G x 297 mm) (Please read the precautions on the back before filling this page). 1111111. #

Claims (1)

536655 1 > Announcement VI. Application for Patent Scope No. 88113987 Patent Application Amendment for Patent Scope (please read the precautions on the back before filling out this page) 1. A method of manufacturing a liquid crystal display device, which includes at least- A pair of transparent substrates and a liquid crystal composition sandwiched between the substrates; wherein a matrix-shaped complex scanning line, image signal wiring, and a common electrode are arranged on the surface of the substrate opposite to any one of the substrates. The pair of pixel electrodes, an active element connected to the pixel electrode, an obscure line, and an image signal connected to the active element, are characterized in that: when the idler insulating film of the active element is deposited on a substrate, only Part of the deposition is in a part containing only the effective pixel area, while the semiconductor layer of the active device, the protective film, and the protective film layer are fully deposited on the substrate. Engine 2. A method for manufacturing a liquid crystal display device, the liquid crystal display device includes at least one side of the substrate, one of the substrates, and the liquid crystal composition 'wherein' is sandwiched between the substrates. A matrix-shaped complex scanning line, image signal wiring, and pixel electrodes paired with a common electrode are disposed on the surface of the pair of substrates. The pixel electrodes are connected to the pixel electrodes, and are connected to the scan lines and the image signals. The component is characterized in that when the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the deposition of the gate insulating film and semiconductor layer of the aforementioned active component on a substrate, part of the deposition is on a part containing only effective pixel areas, and a protective layer The protective film layer is fully deposited on the substrate. 3. A method for manufacturing a liquid crystal display device, the liquid crystal display device comprising at least one pair of substrates that are transparent and a liquid crystal composition sandwiched between the substrates; wherein the substrates are opposed to any one of the substrates A matrix-shaped complex scanning line, image signal wiring, a pixel electrode paired with a common electrode, connected to the above-mentioned day electrode, and the above-mentioned scanning line 45 are arranged on the surface. This paper is in accordance with Chinese National Standard (CNS) A4. Specifications (210X297 mm) 536655 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application and financial = active components for signal connection; It is characterized by: Board: gate time film = cattle gate insulation film 2. Protective film When the protective film layer is deposited on the substrate, it is 'locally deposited' and only the semiconductor layer is deposited on the substrate. ~ Prime & County of the Region '4 · If the third area of the patent application area Shen Cai contains only the effective pixel area, the gate edge includes at least-the side is transparent The LCD device: with iLr, and Any of the aforementioned substrates-a pair of substrates facing each other = a plurality of swash-shaped multiple scanning materials, and image signal wiring are provided. "Xueyetong" shaft-pair day element electrodes, connected to the day element electrodes, * the scan and the image signal It is a continuous active element; it is characterized by: "Hand = a part of the microconducting domain when the closed-electrode insulating film, semiconductor layer, and protective film protective film layer of the aforementioned active element is deposited on the board. The effect pixel area is the method described in item 5 of the scope of the patent application. The product area ratio is partially deposited on the free area containing only valid pixel areas. =, X.:, · Please refer to the patent scope No. 1, 2, 3, 4 Measures of 5, 5 or 6: Companion master = The static electricity countermeasure connecting the static electrode to the wiring of the common electrode and the scanning line is to protect the video signal completely. 70 types of movable type 4 are protective film protective film layer 8 · As for the patent application scope of item 1, 2, 3, 4, 5 or 6 ---- • equipment ------- order --- -夤 (Please read the notes on the back before filling out this page) & Zhang Suanji Shicai Guanjiazhuan (CNS) 70 pieces of static electricity and matching static electricity connecting the common electrode and the scanning line, and two sides of the protective electrode insulating film boundary material for fr electric countermeasures connecting the common electrode and the image signal deepening Γ_: placed in the closed state of local miscellaneous deposition " 7 Please contact the No. 1, 2, 3, 4, 5, or 6 of the patent scope ... The common electrode of the field / recording material and the above-mentioned scanning line are opposed to each other with static electricity. The connection part of the active component is connected to the knife. Describe the static electricity of the common electrode and the front core line .... The connection part protecting the active element is placed outside the area where the gate of the local deposition is absolutely unnecessary. 1．If item q, 2, 3, 4, 5, or 6 of the scope of the applied patent = method, the frame rubber wire ea that is bonded to the two substrates to form a liquid crystal rectifier is arranged on the locally deposited ㈣ electrode insulation ㈣ border Or outside the region of the interlayer insulating film, and located within the region where the cover film is deposited. 11. The method as described in item 7 of the scope of the patent application, wherein the sealant line (Seal) of the lamination-sheet substrate to form a liquid crystal cell is arranged on the periphery of the gate insulation film or the gate insulation film Outside the region and within the region where the cover film is deposited. 12. The method as described in item 8 of the scope of application for a patent, wherein the sealant line (Seal) bonded to two substrates to form a liquid crystal Cell is arranged on the periphery of the gate insulation film or the gate insulation film. Outside the region, and b is within the region where the cover film is deposited. 1 3 · The method as described in item 9 of the scope of the patent application, wherein the sealant line (Seal) that forms the liquid crystal cell by bonding two substrates is arranged on the periphery of the gate insulation film or the gate insulation film Outside the area, 2 I binding 47 ^^ standard is applicable to China National Standard (CNS) A4 specification (210X297 mm) 536655 A8 B8 C8 D8 6. The scope of patent application is located within the protective film deposition area. 1 4 · A method of manufacturing a liquid crystal display device. The liquid crystal display device · (Please read the precautions on the back before filling out this page} The device includes at least-the side is transparent-the substrate, clamped in the aforementioned A liquid crystal composition between substrates, wherein a matrix-shaped complex scanning line, an image signal wiring, a daylight electrode paired with a common electrode, and a pixel connected to the common pixel are arranged on the surface of the substrate opposite to any one of the substrates. The electrode, the active element connected to the scanning line and the image signal, is characterized in that the light transmission amount of the photomask is changed in more than three stages, such as full light transmission, semi-light transmission, and complete blocking, so that the positive light is changed. The thickness of the barrier film can be changed in more than three stages. Order 15. According to the method described in item i 4 of the scope of the patent application, the scanning line, the semiconductor area of the active element, the image signal wiring, and the pixel voltage = etc. The light transmittance of the photoresist of each intersection of the liquid crystal display element and the overlapping step has a change of more than three stages, and after = light = development, the photoresist film thickness has a change of more than three stages. ”Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 16 · As described in item 4 of the scope of the patent application, the method is to add a channel mask for the thin film transistor element that connects the image signal wiring and pixel electrodes. After the development of the positive photoresist, the thickness of the positive photoresist film constituting the channel portion of the transistor is reduced. 17. The method described in item 3, 4, 5, or ^ of the patent scope , Which is based on the item i 3 of the scope of the patent application, by increasing the light transmission of the thin film transistor du, ° b 1 channel channel mask connected to the image signal wiring and the day element electrode, in Zhengguang After the resist development, make the positive photoresistance of the channel part of the transistor element thinner and thicker = 48 squares of this paper, using China National Standard (CNS) A4 (210 X 297 mm) 536655 8 888 ABCD Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 6. The scope of patent application, the image signal line and the pixel electrode are separated and formed at the same time, and the n + layer of the channel is removed, including this project and the formation of the cat line. The photomask project is completed by a second photomask project. 1 8 · As described in item 1 or 2 of the scope of patent application, the method described in item # 13 of application # 13 is used to increase the connection of the image signal wiring. The method of reducing the thickness of the positive photoresist film constituting the channel portion of the thin film transistor element after the positive photoresist is developed in the light transmission of the thin film transistor element portion of the thin film transistor element. The image signal wiring and the pixel electrode are formed at the same time, and then a protective film is deposited on the entire surface of the substrate, and a connection hole (—thole) for connection with the drive IC circuit is opened. Two ports 19 · According to the method described in item 28 of the scope of the patent application, the image signal wiring and the drain electrode are formed separately at the same time, and then after the spreading film is deposited on the substrate, the formation and driving of the IC circuit are simultaneously performed. The contact hole of the connection terminal (Contacthole) and the connection hole (Contacthole) connecting the transparent pixel electrode and the drain electrode. After that, a transparent conductive film is deposited and a day electrode and a terminal electrode are formed. ,, 20 · According to the method described in the scope of patent application No. 3, 4, 5, or 6, after the image signal wiring and the day electrode are formed at the same time, the metal film and n + of the channel part of the active component are removed. Layer, and then a protective film is locally deposited on the site containing the effective daylight region. 2 1 · As described in item 3, 4, 5, or 6 of the scope of the patent application, after the image #wiring and electrode electrodes are deposited, the transparent conductive film is deposited, and the patterning signal wiring and In the case of pixel electrodes, the metal film and n + layer of the channel of the thin film transistor are removed. 49 Wood paper standard is applicable to China National Standards (CNS) Octagon (21〇 > < 297mm) -------- 9 ------, 玎 ----- Φ (Please read the notes on the back before filling in this page) 536655 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs After making a sheet of paper, the protective film is partially deposited on the part containing the effective daylight region. 22 The method according to item 2, 5, or 6 of the patent application scope is to deposit a part of the gate insulating film and a part of the semiconductor layer on the part containing the effective daylight region, and then form the image signal wiring and drawing at the same time. After the element electrode is removed, the n + layer exposed on the surface is removed, and then the cover film is fully deposited on the substrate and locally deposited on the part containing the effective pixel area. Then, in order to form the channel portion of the thin film transistor element and the image The signal wiring and pixel electrodes' remove excess protective film and semiconductor layer. 2 3. The method described in item i, 3 or 4 of the patent scope, is to deposit the gate insulating film locally on the part containing the effective pixel area and then deposit a semiconductor layer on the substrate, and After the image signal wiring and the pixel electrode are formed at the same time, the & layer exposed on the surface is removed, and then a protective film is fully deposited on the substrate or partially deposited on the part including the effective area, and then the redundant protective film is removed. And semiconductor layers. The channel part of the thin film transistor element and the pixel electrode of the video signal. The method described in item 22, after forming the image signal wiring and the drain electrode, removes the ^ stone road from the surface, and then makes the protective film fully deposited on the substrate or partially. Deposited in the area of effective pixel area, and then remove the extra protective film and half: open again> to form a transparent pixel electrode, so as to form a thin film active surge, channel and image signal wiring and Drain electrode. 、 峥 道 2 5 · As described in item 23 of the scope of patent application, the _ 50 scale is applicable to China National Standard (CNS) A4 specifications (210X297 public director T --- 鬓 ------, 玎- ---- Φ (Please read the precautions on the back before filling in this page) 536655 ABCD After forming the image signal wiring and drain electrode, remove the exposed surface ^ layer, and then let the protective film be fully deposited or partially on the substrate After being deposited in the package: the effective pixel area, the transparent pixel electrode is formed after removing the extra protective film and semiconductor layer, so as to form the channel of the thin film transistor: (Channel) and the image signal wiring and the drain electrode. 26. According to the method described in item 5 or 6 of the patent scope, the interlayer insulating film and the semiconductor layer are partially deposited on a portion containing an effective pixel area, and a channel portion of the thin film transistor is formed (㈤ Earn]) After that, the image signal wiring and day element # are simultaneously formed, and after removing the n + layer of the channel surface of the thin film transistor, the protective film is locally deposited on the part containing the effective day element area. 2 7. If applying for a patent The method described in item 3 or 4 consists of partially depositing an insulating film on a part containing an effective daylight region, and then fully depositing a half body layer on the substrate, and then depositing a channel portion of the thin film transistor ( After channel formation, image signal wiring and pixel electrodes are formed at the same time, and then the n + layer of the channel portion of the thin film transistor is removed, and then a protective film is partially deposited on the portion containing the effective pixel area. 2 8 · The method as described in item 丄 or 2 of the scope of the patent application, where the gate insulating film is locally deposited on the part containing the effective daylight region, and then the f conductor layer is deposited on the substrate in whole or in part. For the portion containing the effective daylight region, the channel portion of the thin film transistor is patterned, and then the image signal wiring and the daylight electrode are formed at the same time, and then the channel portion n + layer of the thin film transistor is removed. First read the precautions on the back and then § ▲ Page f Order Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A8 B8 C8 D8 Scope of patent application: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the film is deposited on the substrate's comprehensive surface, and a contact hole is opened with the drive department. Bat 2 9. As described in the patent claim 5 or 6, the edge film and the semiconductor layer are locally deposited on the portion containing the effective daylight region, and the thin film active channel portion (Cha-) The person forms the image signal wiring and the day electrode at the same time, and then removes the n + layer on the surface of the thin film channel section, and deposits a protective film on the effective pixel area of the package 3, and then on the protective film A common electrode is formed. 30. A method for manufacturing a liquid crystal display device, the liquid crystal display device comprising at least-one side being transparent-a substrate, and a liquid crystal composition sandwiched between the substrates; The substrate surface is provided with a matrix-like complex scanning line, image signal wiring, a pixel electrode paired with a pixel electrode, an active element connected to the pixel electrode, and connected to the cat line and the image signal; The method includes: after the gate insulating film of the foregoing active element is locally deposited on a portion including an effective pixel area, a semiconductor layer and an etching stopper layer (^ also 丨 Stopper) are fully deposited on the substrate or partially deposited on the substrate. In order to obtain the ohmic contact # n + layer in the area of the effective day element region, if it is an ion implantation method, it is only partially implanted in the portion containing the effective pixel region. For example, the n + layer is formed by plasma chemical vapor deposition (CVD). ) During deposition, the substrate is fully deposited on the substrate, or it is partially deposited on the part containing the effective daylight region. 3 1 The method described in item 30 of the patent scope of Shenyan, after the image signal wiring and the pixel electrode are patterned at the same time, to remove both the n + layer and the semiconductor layer below the n + layer exposed on the surface. , The active 52 paper size will apply the Chinese National Standard (CNS) A4 specification (210X297 mm) ------ Order ----- (Please read the precautions on the back before filling this page) 536655 A8 B8 C8 D8 The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the patent application channel elements (Channel), image signal wiring, day electrode and so on. 3 2 · According to the method described in item 30 or 31 of the scope of patent application, after the image signal wiring and the day electrode are formed at the same time, the protective film is fully deposited on the substrate, or partially deposited on the substrate containing effective pixels. Area of the area. Next, in order to connect with the driver 1C, the unnecessary protective film, the n + layer, and the semiconductor layer on the connection terminal are removed. 3 3-A method for manufacturing a liquid crystal display device, the liquid crystal display device comprising at least one pair of substrates that are transparent, and a liquid crystal composition sandwiched between the substrates; wherein the pair of the substrates is paired with any of the substrates. On the surface of the substrate, there are arranged a plurality of matrix concealment lines, image signal wiring, pixel electrodes paired with a common I electrode, an active element connected to the pixel electrode, and a cat line and an image signal. It is characterized in that for the display of one pixel, the gate electrode of the thin film transistor is arranged in parallel to more than two channels, and the channel portion of the thin film transistor is set to be flat and more than two channels are attached to two or more The respective hannel and electrode are connected by pixel electrodes connected to each other. 34. The method as described in the scope of application for patents i, 2, 3, and 4 ° is used to make a liquid crystal display panel with a transverse electric field method. 3 5 · If the scope of patent application No. 14, " or the method of manufacture " is used to make a liquid crystal display panel of the transverse electric field method. 36. Manufacture a liquid crystal display panel with a horizontal electric field square handle as described in item i7 of the scope of patent application. / 'Used for 37. The method described in item 18 of the patent scope is used for _ —_ 53 This paper is applicable to the Chinese National Standard (CNS) Eighty-fourth Secret (210 X 297) --- ----------- Order ----- (Please read the notes on the back before filling out this page) 536655 A8 B8 C8 D8 Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs print the scope of patent application for production Electric field type liquid crystal display panel. 3 8 · According to the method described in item 19 of the scope of patent application, a liquid crystal display panel of the transverse electric field method is manufactured.糸 Using 39 · To produce a liquid crystal display panel with a transverse electric field method as described in item 20 of the scope of patent application. / Is used to make the liquid crystal display panel of the transverse electric field method as described in item 21 of the scope of patent application ^.糸 Use 4 1 · To produce a liquid crystal display panel of the transverse electric field method as described in item 22 of the scope of patent application. It is used to make a liquid crystal display panel with transverse electric field method as described in item 23 of the scope of patent application. It is used to make a liquid crystal display panel with a transverse electric field method as described in item 24 of the scope of patent application. / Is used to produce the liquid crystal display panel of the transverse electric field method as described in item 25 of the scope of patent application. / Is used to make a liquid crystal display panel with a transverse electric field method as described in item 26 of the scope of patent application. It is used to make a liquid crystal display panel with a transverse electric field method as described in item 27 of the scope of patent application. It is used to make a liquid crystal display panel with a transverse electric field method as described in item 28 of the scope of patent application. / Used to make a liquid crystal display panel of the transverse electric field method as described in item 29 of the scope of patent application. It is used for 49. The method described in item 30 of the scope of patent application, ________ 54 This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) -------- ΜΨ- ----- Order ----- 19 (Please read the notes on the back before filling out this page) 536655 A8 B8 C8 D8 The scope of patent application for printing by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is for making transverse electric fields. LCD display panel. 50. The method described in item 32 of the scope of patent application is for making a liquid crystal display panel of the transverse electric field method. -51-The method as described in item 19 of the scope of patent application, the liquid crystal display panel adopts a Twistnematic liquid crystal method, a strong induced liquid crystal method or a vertical alignment liquid crystal method. 52. According to the method described in item 24 of the scope of patent application, the liquid crystal display panel adopts a Twistnematic liquid crystal method, a strongly induced liquid crystal method, or a vertical alignment liquid crystal method. 53. According to the method described in item 25 of the patent application scope, the liquid crystal display panel adopts a Twistnematic liquid crystal method, a strongly induced liquid crystal method, or a vertical alignment liquid crystal method. 5 4. The method described in the items 丄, 2, 3, 4, 5 or ^ of the scope of the patent application, the LCD of the liquid crystal display element produced by this method 铝 aluminum (or alloy of Ming) and titanium (or titanium Alloy) two-layer structure, or three-layer structure of Shao (or aluminum alloy), titanium (or titanium alloy), and molybdenum (or molybdenum alloy), or aluminum (or aluminum alloy), chromium (or chromium alloy), and molybdenum ( Or molybdenum alloy). The common electrode opposite to the pixel electrode uses a single layer structure of titanium alloy, or a two-layer structure of titanium (or titanium alloy) and pin (or pin alloy), or chromium (or chromium alloy) and Turn (or samarium alloy) two-layer structure. Said, 5 5. Please pay attention to the method described in item 14, 15 or 16 as described in 'The scanning line of the liquid crystal display element produced by this method is aluminum (or alloy of Ming) and titanium (or alloy of titanium). ) Two-layer structure, or Shao (or Ming alloy ___55 ^ paper size applies Chinese National Standard (CNS) Ya 4 threat (210X297 mm) order (Please read the precautions on the back before filling in this page) 536655 A8 B8 C8 D8 Patent application scope {Please read the notes on the back before filling in this page j), the three-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or aluminum alloy), chromium (or chromium alloy), and indium (Or turning alloy) three-layer structure 1. The common electrode in which Lu and the pixel electrode are opposite to each other is made of titanium (or titanium alloy), or made of titanium (or titanium alloy) and turning (or turning alloy). Two-layer I, or a two-layer structure of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 56. If the method described in item 17 of the patent scope, please wipe out the liquid crystal display element using the method Wire system aluminum (or aluminum toilet: (or titanium alloy) two-layer structure, or Shao (or Shao Alloy), titanium (or Chinjin) and molybdenum (or surface alloy) three-layer structure, wire (or | g alloy), network: chromium alloy) and molybdenum (or molybdenum alloy) three-layer structure, and drawing The common electrode in the opposite direction adopts a single-layer structure of titanium (or a titanium alloy), or a two-layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy), or a chromium alloy, and a turn (or Alloy). '5 7. Such as the scope of patent application! The method described in item 8, the hidden line of the liquid crystal display element produced by this method is a two-layer structure (or a titanium alloy) printed by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, or aluminum (Or aluminum alloy), titanium (or doped gold) and three-layer structure of molybdenum (or molybdenum alloy), or three-layer structure of aluminum (or aluminum alloy), S chromium = chromium alloy) and molybdenum (or molybdenum alloy) The common electrode with the day electrode = the opposite electrode adopts a single layer structure of titanium (or titanium alloy), or a two-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or 3 chromium or chromium Alloy) and rhenium (or molybdenum alloy) two-layer structure. -'(58. The method described in item 19 of the scope of patent application, the two-layer structure of the line-seal (or alloy of the name) and (or alloy of titanium) of the liquid crystal display element produced by this method, Or aluminum (or aluminum alloy), titanium (or titanium into 56) This paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 536655 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Patent application scope: gold) and three-layer structure of molybdenum (or molybdenum alloy), or three-layer structure of aluminum (or aluminum alloy), chromium (or chromium alloy), and molybdenum (or molybdenum alloy). The common electrode in the direction adopts a single-layer structure of titanium (or a titanium alloy), or a two-layer structure of titanium (or a titanium alloy) and _ (or an alloy), or a complex (or a chromium alloy) and molybdenum (or molybdenum) Alloy). 5 9. According to the method described in the scope of patent application No. 20, the scanning line of the liquid crystal display element produced by this method is aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium). ) Two-layer structure, or aluminum (or aluminum alloy), titanium Or titanium alloy) and three-layer structure of molybdenum (or molybdenum alloy), or three-layer structure of aluminum (or aluminum alloy), chromium (戋 chrome alloy), and molybdenum (or molybdenum alloy), opposite to the pixel electrode 1 The common electrode uses a single-layer structure of titanium (or a titanium alloy), or a two-layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy), or chromium (or a chromium alloy) and rhenium (or a molybdenum alloy) ) 'S two-layer structure. 6 0 · According to the method described in item 2 (1) of the scope of patent application, the scanning line of the liquid crystal display element produced by this method is aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium). Two-layer structure, or three-layer structure of aluminum (or aluminum alloy), titanium (or titanium alloy), and molybdenum (or molybdenum alloy), or aluminum (or aluminum alloy), chromium (戋 chrome alloy), and molybdenum (or molybdenum) Alloy) with a three-layer structure. The common electrode opposite to the pixel electrode uses a single-layer structure of titanium (or titanium alloy), and 戋 consists of a two-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy). , Or a two-layer structure of (or chromium alloy) and molybdenum (or molybdenum alloy). 6 1 · The method described in item 22 of the scope of patent application, the two-layer structure of the scanning line system (or alloy of Shao) and titanium (or alloy of titanium) of the liquid crystal display element produced by this method, or Aluminum (or aluminum alloy), titanium (or titanium binding (please read the precautions on the back before filling out this page) 57 536655 Printed by A8 B8 C8 D8 Patent Cooperative Gold for Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and Molybdenum (Gold) Or molybdenum alloy) three-layer structure, or three-layer structure of aluminum (or Ming alloy), alloy (戍 chrome alloy), and flip (or platinum alloy) structure, the common electrode opposite to the day element electrode uses titanium (or Titanium alloy) single-layer structure, 戍 consists of a two-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or a two-layer structure of molybdenum or chromium alloy) and molybdenum (or molybdenum alloy). 6 2 · According to the method described in item 23 of the scope of patent application, the scanning line of the liquid crystal display element produced by the method is a two-layer structure of aluminum (or an alloy of aluminum) and Chin (or an alloy of), or Three-layer structure of aluminum (or aluminum alloy), titanium (or Chinjin), and molybdenum (or samarium alloy), or three layers of aluminum (or aluminum alloy), alloy (chrome bite alloy), and hafnium (or molybdenum alloy) Structural structure, the common electrode opposite to the pixel electrode ^ adopts a single-layer structure of “(or a titanium alloy), and consists of a two-layer structure of titanium (or a titanium alloy) and indium (or a molybdenum alloy), or a network ( Or chromium alloy) and molybdenum (or molybdenum alloy) two-layer structure. 6 3 · The method described in item 24 of the scope of patent application, the scanning line of the liquid crystal display element produced by this method is a two-layer structure of aluminum (or an alloy of aluminum) and ^ (or an alloy of titanium) 'or Three-layer structure of Ming (or boat alloy), Chin (Gochin gold), and molybdenum (or molybdenum alloy), or three-layer structure of aluminum (or aluminum alloy) / chrome-chromium alloy) and molybdenum (or molybdenum alloy) The common electrode with the pixel electrode or the opposite direction adopts a single-layer structure of titanium (or a titanium alloy) and a two-layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy). ) And two layers of molybdenum (or molybdenum alloy). $ ,,, chromium (64. The scanning line of the liquid crystal display element manufactured by the method described in item 25 of the patent application is a two-layer structure of aluminum (or aluminum and gold M (or an alloy of titanium)) , Or Ming (or chain alloy), Titanium (Ge, Titanium ^ Paper size applies Chinese National Standard (CNS) A4 specifications (210 × 297 public director) — — — — — — Order " ~ I (Please read the back Please fill in this page for attention; > 536655 A8 B8 C8 D8 patent application scope printed by the Intellectual Property Cooperative Bureau of the Ministry of Economic Affairs, and the three-layer structure (or alloy). < Ming (or Ming alloy), chrome alloy) and indium (or _alloy) three-layer structure, the common electrode opposite to the day element electrode uses titanium (or titanium alloy) single-layer structure titanium (or Titanium alloy) and flip (or indium alloy) two-layer structure, or a two-layer structure of or chromium alloy) and indium (or | mesh alloy). '6 5. According to the method described in item 26 of the patent scope, the scanning line of the liquid crystal display element produced by this method is a two-layer structure of aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium). , Or a three-layer structure of aluminum (or aluminum alloy), titanium (or titanium alloy), and molybdenum (or molybdenum alloy), or a three-layer structure of aluminum (or aluminum alloy), chrome-chromium alloy, and indium (or alloy) The common electrode opposite to the pixel electrode adopts a single-layer structure of titanium (or titanium alloy), or a two-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or chromium (or chromium) Alloy) and molybdenum (or molybdenum alloy) two-layer structure. 6 6 · The method described in item 27 of the scope of patent application, the scanning line of the liquid crystal display element produced by this method is a two-layer structure of aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium), or Three-layer structure of aluminum (or aluminum alloy), titanium (or titanium alloy), and molybdenum (or molybdenum alloy), or three-layer structure of aluminum (or aluminum alloy), chromium (or chromium alloy), and molybdenum (or molybdenum alloy) Structure, the common electrode opposite to the pixel electrode adopts a single-layer structure of titanium (or a titanium alloy), or a two-layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy), or chromium (or Chrome alloy) and double-layer structure. 6 7 · The method described in item 28 of the scope of patent application, the scanning line of the liquid crystal display element produced by this method is a two-layer structure of aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium), or Aluminum (or aluminum alloy), titanium (or titanium alloy 59) This paper size is applicable to Chinese National Standard (CNS) M specification (210X297 mm) -------------- tr ----- (Please read the notes on the back before filling in this page} Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A8? 8s ___ D8 VI. Application for patent scope " ^-Gold) and three layers of molybdenum (or molybdenum alloy) Structure, or a three-layer structure of aluminum (or aluminum alloy), chromium (chromium alloy), and molybdenum (or molybdenum alloy). The common electrode opposite to the pixel electrode ^ uses a single-layer structure of titanium (or titanium alloy).戍 Consists of a two-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or chromium or chromium alloy) and! Mesh (or samarium alloy) two-layer structure. '6 8 · According to the method described in item 29 of the scope of patent application, the scanning line of the liquid crystal display element produced by this method is a two-layer structure of aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium), Or three-layer structure of aluminum (or aluminum alloy), titanium (or titanium gold) and molybdenum (or molybdenum alloy), or three layers of aluminum (or aluminum alloy), chromium (戋 chrome alloy) and molybdenum (or molybdenum alloy) Layer structure, the common electrode opposite to the pixel electrode uses a single layer structure of titanium (or titanium alloy), or a two-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or chromium (Or complex alloy) and samarium (or indium alloy) two-layer structure. 6 9 · According to the method described in item 30 or 3 ^ of the scope of patent application, the scanning line of the liquid crystal display element produced by this method is a two-layer layer of aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium). Structure, or three-layer structure of aluminum (or aluminum alloy), titanium (or titanium alloy), and molybdenum (or molybdenum alloy), or aluminum (or aluminum alloy), chromium (or chromium alloy), and molybdenum (or molybdenum alloy) A three-layer structure. The common electrode opposite to the day electrode is a single-layer structure of titanium (or a titanium alloy) or a two-layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy). Two-layer structure of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 70. The method described in item 32 of the scope of patent application, the scanning line of the liquid crystal display element produced by this method is a two-layer structure of aluminum (or an alloy of aluminum) and titanium (or an alloy of titanium), or Aluminum (or aluminum alloy), titanium (or titanium alloy 60) This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) --------- -------- 9 --- ---, 玎 ------ Φ (Please read the notes on the back before filling out this page} 536655 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent Application Gold) and Molybdenum ( Or molybdenum alloy) three-layer structure, or aluminum (or aluminum alloy), chromium (or chromium alloy) and molybdenum (or molybdenum alloy) three-layer structure, the common electrode opposite to the pixel electrode uses titanium (or Titanium alloy) single-layer structure, or a two-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or a two-layer structure of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 7 1 · The method described in item 范围, 2, 3, 4, 5 or 6 of the scope of the patent application, whose scanning line is made of titanium (or titanium alloy), A three-layer structure consisting of copper (or copper alloy) and titanium (or titanium alloy), or a three-layer structure consisting of chromium (or chromium alloy), copper (or alloy of copper), and molybdenum (or molybdenum alloy), or titanium ( Or titanium alloy), copper (or copper alloy) and molybdenum (or molybdenum alloy) three-layer structure; the common electrode that is opposite to the day element electrode uses a single-layer structure of Chin (or Chin alloy), or titanium (Or titanium alloy) and molybdenum (or molybdenum alloy) double-layer structure, or a double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 7 2 · If the scope of application for patent is 丄 4 The method according to item 5, 丄 5 or i 6, wherein the scanning line is a three-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (or chromium alloy) ), A three-layer structure consisting of copper (or a copper alloy) and molybdenum (or a molybdenum alloy), or a three-layer structure consisting of titanium (or a titanium alloy), copper (or a copper alloy), and molybdenum (or a molybdenum alloy); and The common electrodes of the pixel electrodes facing each other are made of a single layer structure of titanium (or titanium alloy), or (Or titanium alloy) and hafnium (or hafnium alloy), a double-layer structure & or a double-layer structure consisting of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 7 3. The method described in 7 items, which scans 61 paper standards Tongzhou T country national grave standard (CNS) A4 specification (210X297 mm) -------- Ψ ------- Order ·- ---- Φ (Please read the notes on the back before filling this page) 536655 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α8 Β8 C8 D8 The scope of patent application is made of titanium (or titanium alloy), copper (or copper) Alloy) and titanium (or titanium alloy) two-layer structure, or chromium (or chromium alloy), copper (or copper alloy) and molybdenum (or molybdenum alloy) three-layer structure, or titanium (or titanium alloy) Three-layer structure consisting of copper, copper (or copper alloy) and cast iron (or molybdenum alloy); the common electrode that is opposite to the pixel electrode uses a single layer structure of titanium (or titanium alloy) or titanium (or alloy) ) And molybdenum (or molybdenum alloy) double-layer structure, or composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy) Composed of a double-layer structure. 74. The method as described in item 18 of the scope of patent application, wherein the concealment line is a two-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (Or chromium alloy), steel (or copper alloy) and three-layer structure composed of molybdenum (molybdenum alloy), or three layers of titanium (or titanium alloy), copper (or copper alloy) and molybdenum (or molybdenum alloy) Layer structure; the common electrode that is opposite to the day element electrode is composed of a single layer structure of titanium (or a titanium alloy), or a double layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy), or chromium (Or chromium alloy) and double layer structure composed of molybdenum (or molybdenum alloy). 7 5 · The method described in item 19 of the scope of the patent application, wherein the concealment line is a three-layer structure composed of titanium (or titanium alloy), copper (or copper alloy), and hafnium (or titanium alloy), or chromium (Or chrome alloy), steel (or copper alloy) and three-layer structure consisting of molybdenum (indium bite alloy), or three (3) titanium (or titanium alloy), copper (戍 copper alloy) and hafnium (or molybdenum alloy) Layer structure; the common electrode in the opposite direction to the day element electrode is composed of a single layer structure of titanium (or titanium alloy), or a double-layer structure consisting of chin (or chin alloy) and phantom (or marriage alloy), or chromium (Or chromium alloy) and double layer structure composed of molybdenum (or molybdenum alloy). 7 6 · As described in item 20 of the scope of patent application, basin sweep γ -------------- Order · ----- SW (Please read the precautions on the back before (Fill in this page) 62 536655 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of patent application is made of rhenium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy) Three-layer structure, or three-layer structure composed of chromium (or chromium alloy), copper (or alloy of copper), and molybdenum (or alloy), or titanium (or titanium alloy), copper (or copper alloy), and indium (or Molybdenum alloy) three-layer structure; and the common electrode opposite to the day element electrode uses a single-layer structure of titanium (or titanium alloy) or a double layer of titanium (or hafnium alloy) and hafnium (or hafnium alloy) Layer structure, or a double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 7 7 · The method as described in item 21 of the scope of patent application, where the concealment line is a three-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (Or chromium alloy), copper (or alloy of copper) and three layers of molybdenum (or alloy), or three layers of titanium (or titanium alloy), copper (or copper alloy) and molybdenum (or molybdenum alloy) Layer structure; the common electrode that is opposite to the pixel electrode is composed of a single layer structure of titanium (or a titanium alloy), or a double layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy), or chromium (Or chromium alloy) and double layer structure composed of molybdenum (or molybdenum alloy). 7 8 · The method as described in item 22 of the scope of the patent application, wherein the cat wire is a three-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (Or chromium alloy), copper (or alloy of copper) and three layers of molybdenum (or molybdenum alloy), or three layers of titanium (or titanium alloy), copper (copper alloy) and molybdenum (or molybdenum alloy) Layer structure; the common electrode in the opposite direction to the book element electrode is composed of a single layer structure of titanium (or titanium alloy) or a double-layer structure composed of titanium (or titanium alloy) and hafnium (or hafnium alloy). Double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 7 9 · The method described in item 23 of the scope of patent application, which scans ___ 63 This paper size is applicable to China National Standard (CNS) A4 specification (2iqx297 mm) " ------- Order ( Please read the notes on the back before filling in this page} 536655 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of patent application is made of titanium (or titanium alloy), copper (or copper alloy) and A three-layer structure consisting of titanium (or titanium alloy), or a three-layer structure consisting of chromium (or chromium alloy), copper (or alloy of copper), and molybdenum (rhenium alloy), or titanium (or titanium alloy), steel ( Or copper alloy) and molybdenum (or molybdenum alloy) three-layer structure; and the common electrode opposite to the pixel electrode uses a single layer structure of titanium (or titanium alloy), or titanium (or titanium alloy) and molybdenum (Or molybdenum alloy) double-layer structure, 戋 double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 8 0 · The method described in item 24 of the scope of patent application, its sweep The concealment is composed of titanium (or titanium alloy), copper (or copper alloy) and titanium ( Titanium alloy) two-layer structure, or chromium (or chromium alloy), copper (or copper alloy) and three-layer structure of molybdenum (or molybdenum alloy), or titanium (or titanium alloy), copper (or copper alloy) ) Three-layer structure composed of molybdenum (or molybdenum alloy); and the common electrode opposite to the pixel electrode is composed of a single layer structure of titanium (or titanium alloy), or titanium (or titanium alloy) and molybdenum (or molybdenum) Alloy), a double-layer structure consisting of chromium (or a chromium alloy) and molybdenum (or a molybdenum alloy). 8 1 · The method described in item 25 of the scope of patent application, its scanning line system Consists of a three-layer structure of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy ') ^, or chromium (or chromium alloy), copper (or copper alloy) disc-turned indium alloy) Three-layer structure, or a three-layer structure consisting of titanium (or titanium alloy), copper (or copper alloy), and indium alloy (or indium alloy); and the common electrode opposite to the book element electrode uses titanium (or titanium alloy) Single, or double-layer structure consisting of titanium (or titanium alloy) and indium (or indium alloy) = Double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 82 · The method described in item 26 of the patent application, which ㈣ ______64 This paper size applies to China National Standard (CNS) A4 specifications (21 〇χ 297 公 |) -------------- tr ------- cPlease read the notes on the back before filling in this page} 536655 Six Intellectual Property Bureau of the Ministry of Economic Affairs A8, B8, C8, and D8 printed by the Consumer Consumption Cooperative. The patent application line is a three-layer structure consisting of titanium (or titanium alloy), copper (or copper alloy), and titanium (or titanium alloy), or chromium (or chromium alloy), copper. (Or copper alloy) and three-layer structure consisting of indium (or molybdenum alloy), or three-layer structure consisting of titanium (or titanium alloy), copper (copper alloy) and molybdenum (or molybdenum alloy); The common electrode in opposite directions uses a single-layer structure of titanium (or a titanium alloy) or a double-layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy). 戋 consists of chromium (or a chromium alloy) and molybdenum. (Or molybdenum alloy). 8 3 · The method as described in item 27 of the scope of patent application, where the concealment line is a two-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (Or chromium alloy), copper (or alloy of copper) and three layers of molybdenum (戋 molybdenum alloy), or titanium (or titanium alloy), steel (or copper alloy) and molybdenum (or molybdenum alloy) Three-layer structure; the common electrode that is opposite to the pixel electrode is composed of a single layer structure of titanium (or titanium alloy), or a two-layer structure of “(or” alloy) and rhenium (or alloy), and 戋 is made of chromium (Or chromium alloy) and double layer structure composed of molybdenum (or molybdenum alloy). 8 4 · The method as described in item 28 of the scope of patent application, whose scanning line is a three-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (Or chromium alloy), copper (or alloy of copper) and three layers of molybdenum (or molybdenum alloy), or three layers of titanium (or titanium alloy), copper (or copper alloy) and molybdenum (or molybdenum alloy) Layer structure; the common electrode that is opposite to the pixel electrode is composed of a single layer structure of titanium (or a titanium alloy), or a double layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy), or chromium (Or chromium alloy) and double layer structure composed of molybdenum (or molybdenum alloy). 8 5 · The method described in item 29 of the scope of patent application, its cat sweeping (please read the precautions on the back before filling this page) 65 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A8 B8 C8 D8 Patent application line is a two-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy) 'or chromium (or chromium alloy), copper (or copper alloy) and molybdenum ( Or molybdenum alloy) two-layer structure, or titanium (or titanium alloy), copper (or copper alloy) and molybdenum (or molybdenum alloy) three-layer structure; and the common electrode in the opposite direction with the day element electrode uses titanium (Or titanium alloy) single-layer structure 'or double-layer structure consisting of titanium (or titanium alloy) and molybdenum (or molybdenum alloy), or double-layer consisting of chromium (or chromium alloy) and molybdenum (or molybdenum alloy) structure. 86. The method according to item 30 or 31 of the patent application scope, wherein the scanning line is a three-layer structure composed of titanium (or a titanium alloy), copper (or a copper alloy), and titanium (or a titanium alloy) , Or a three-layer structure consisting of chromium (or chromium alloy), copper (or alloy of copper), and molybdenum (or molybdenum alloy), or titanium (or titanium alloy), copper (or copper alloy), and molybdenum (or molybdenum alloy) The three-layer structure of the composition; the common electrode opposite to the pixel electrode uses a single-layer structure of titanium (or a titanium alloy) or a double-layer structure of titanium (or a titanium alloy) and molybdenum (or a molybdenum alloy). Or a double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 8 7 · The method described in item 32 of the scope of patent application, the scanning line of which is a two-layer structure composed of titanium (or titanium alloy), copper (or copper alloy) and titanium (or titanium alloy), or chromium (Or chromium alloy), copper (or alloy of copper) and three layers of molybdenum (or molybdenum alloy), or three layers of titanium (or titanium alloy), copper (or copper alloy) and molybdenum (or molybdenum alloy) Layer structure; the common electrode that is opposite to the day element electrode is composed of a single layer structure of titanium (or titanium alloy), or a double-layer structure of chitin (or titanium alloy) and molybdenum (or molybdenum alloy), or chromium (Or chromium alloy) and molybdenum (or rhenium alloy) double-layer structure. 8 8 · If item 1, 2, 3, 4, 5 or 6 of the scope of patent application is applied _______ 66 This paper is suitable for household wealth (CNS) A4 secret (210X297 ^ 1) " ^------ --- 0Ύ --------- Order ----- (Please read the notes on the back before filling in this page) 536655 A8 B8 C8 D8 Printed and patented by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs In the method described in the scope, the image k wiring is a double-layer structure of titanium (or a titanium alloy) and aluminum (or a magical double layer structure), or a double-layer structure of titanium (or a hafnium alloy) and a gu (or key alloy). , Or a double-layer structure composed of chromium (or chromium alloy) and rhenium (or alloy). 8 9. As described in the scope of patent application 帛 7 *, the image signal wiring is titanium (or titanium alloy). A double-layer structure with Shao (or Shao alloy), or a double-layer structure with titanium (or titanium alloy) and hafnium (or alloy), or a double-layer structure consisting of complex (or chromium alloy) and molybdenum (or molybdenum alloy) 9 0 · According to the method described in item 8 of the patent scope, the image signal wiring is a double-layer structure using Chin (or titanium alloy) and Ming (or Shao alloy). , Or a double-layer structure made of titanium (or a titanium alloy) and an alloy (or an alloy), or a double-layer structure of chromium (or a chromium alloy) and molybdenum (or a molybdenum alloy). 9 1 · Please request a patent In the method described in item 9, the image signal wiring adopts a double-layer structure of titanium (or titanium alloy) and Ming (or Shao alloy), or a double layer of titanium (or convergence alloy) and flip (or pin alloy) Structure, or a double-layer structure composed of a complex (or chromium alloy) and molybdenum (or a molybdenum alloy). 9 2 · As described in item 丄 Q of the patent, the image signal wiring is made of titanium (or titanium Alloy) and Shao (or a magic double layer structure or a double layer structure of rhenium (or a titanium alloy) and molybdenum (or a rhenium alloy) or a combination of a complex (or chromium alloy) and molybdenum (or a molybdenum alloy) Double-layer structure. -------------- Order ------ (Please read the precautions on the back before filling out this page) 1 9 3 · If you apply for the scope of patents In the method described, the image L number wiring 疋 adopts a double-layer structure of titanium (or titanium alloy) and Ming (or Shao alloy) or consists of titanium (or titanium alloy) and indium ( Indium alloy) of two-layer structure, or a two-layer structure of chromium (or chromium alloy) composed of the molybdenum (or molybdenum alloy of qe. 536655 A8 B8 C8 D8 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, applying for patent coverage, signal wiring W ^ Patent ㈣ Item 12 method, its image: two by Qin Ming (or Ming alloy) double-layer structure or double-layer structure consisting of titanium (or titanium alloy) and rhenium (or molybdenum alloy (or chromium alloy) and pin (or pin alloy) or chromium 9 5 Please special · ㈣ 1 3 In the method described in the above item, the vertical image H is a double-layer structure made of titanium (or a titanium alloy), such as a compound, = a double-layer structure made of titanium (or a titanium alloy) and an indium rhenium alloy, or a complex (or chromium) Alloy) and molybdenum (or molybdenum alloy) double-layer structure. 9 "As described in the scope of patent application No. 14," ...: method, the image signal wiring is using titanium (or titanium alloy) and the inscription (or inscription Alloy), or a two-layer structure consisting of titanium (or a titanium alloy) and indium (or a key alloy), or a two-layer structure consisting of chromium (or a chromium alloy) and a titanium (or an indium alloy). 97 · For example, if the method described in item 17 of the patent scope is used, the image signal wiring is made of titanium (or titanium Gold) charm (or Ming alloy) double-layer structure, or double-layer structure of titanium (or titanium alloy) and turned (or turned alloy), or composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy) Double-layer structure 98. As described in item 18 of the scope of patent application; description: method, the image signal wiring is a double-layer structure using titanium (or titanium alloy) and Shao (or Ming alloy), or from titanium (or titanium alloy) Double-layer structure with molybdenum (or molybdenum alloy) or a double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 9 9. The method described in item 19 of the scope of patent application, its image The signal wiring is a double-layer structure made of titanium (or titanium alloy) and Ming (or Ming alloy), or a double-layer structure of titanium (or titanium alloy) and indium (or osmium alloy), or chromium 68 paper size applicable Ningguo Guozuka Standard (CNS) A4 Specification (210X297mm) ---------------- Order ----- 镳 (Please read the precautions on the back before filling this page ) 536655 6. The double-layer structure composed of the scope of patent application (or chromium alloy) and molybdenum (or molybdenum alloy). 1 0 0 The method described in item 20, wherein the image #wiring is a double-layer structure of titanium (or titanium alloy) and aluminum (or aluminum alloy), or a double-layer structure of titanium (or titanium alloy) and molybdenum (or molybdenum alloy) Layer structure, or a double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 10 1 The method described in item 21 of the patent scope of Shen Yan, whose image wiring is made of titanium (or Titanium alloy) and aluminum (or aluminum alloy) double-layer structure, or titanium (or titanium alloy) and molybdenum (or molybdenum alloy) double-layer structure, or chromium (or chromium alloy) and molybdenum (or molybdenum alloy) The double-layer structure of the composition. 10 2 According to the method described in item 22 of the patent application scope, the image signal wiring is made of titanium (or titanium alloy) and! Lu (or Ming alloy) double-layer structure, or double-layer structure consisting of titanium (or titanium alloy) and molybdenum (or indium alloy), or double-layer consisting of chromium (or chromium alloy) and molybdenum (or molybdenum alloy) structure. 103. According to the method described in item 23 of the patent scope, the image signal wiring is a double-layer structure of titanium (or titanium alloy) and Ming (or no alloy), or a combination of convergence (or titanium alloy) and Double-layer structure of indium (or indium alloy), or a double-layer structure of chromium (or chromium alloy) and indium (or osmium alloy). 1 0 4 · According to the method described in item 24 of the patent scope, the letter and the letter = the line is a double layer using iridium (or a titanium alloy) and an inscription (or an inscription alloy) = two titanium two or: alloy ) And indium (or pin alloy) double-layer structure, or a double-layer structure consisting of a complex (or chromium alloy) and a turn (or turn alloy). Like: === method, manufacturing, or alloy) and E Er == _____ 69 papers; ^ Applicable to Zhongguanjia Standard (CNS) Α4 · (21Gx297 ^ item f page order 螓 536655 A8 B8 C8 D8 Patent application scope Double-layer structure composed of chromium (or chromium alloy) and or molybdenum alloy. 1 0 6 · If the scope of the patent application is No. 26 = the image signal wiring is made of titanium (or titanium alloy (or square two = manufactured, or made of titanium (or titanium alloy) and titanium alloy): chromium ( Or chromium alloy) and 锢 (or alloy X) double-layer structure ^ or by 1 0 7 as in the patent scope 2 7 1 The image signal wiring is made of titanium (or titanium alloy) and Ming (or Shaohe Made of square, or made of titanium (or titanium alloy) and sea (or alloy structure) :: Double-layer structure composed of chromium (or chromium alloy) and thorium (or indium alloy) The method described in item 28, wherein: Γ consists of: Γ: or titanium alloy) and aluminum (or Shao alloy) double-layer structure or titanium (or titanium alloy) and double (or indium alloy) double-layer _, Double-layer structure composed of chromium (or alloy) and cast (or indium alloy). I ◦ 9 · If the method described in item 29 of the patent, please use titanium (or titanium alloy) and Ming (or Shao alloy) double layer = made of, or made of titanium (or titanium alloy) and double (or indium alloy) double structure, or by the network (or chromium alloy) and double (or double alloy) group II 0. As described in item 30 or 3 丄 of the scope of patent application, the image signal wiring is made of titanium (or titanium alloy) and Shao (or double-layered structure of Syria) or titanium (or Titanium alloy) and doubled (or doubled alloy). Layer gold structure =, or a double-layer structure composed of chromium (or chromium alloy) and doubled (or doubled alloy). &Amp; 1 1 1. 3 The method described in item 2 & straight & image signal wiring is made of titanium (or titanium alloy) and aluminum (or aluminum alloy), or made of titanium (or titanium alloy) and flip (or pin alloy) The double-layer structure of the double-layer structure is based on the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) — -------- II (please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Ministry of Intellectual Property Bureau of the Ministry of Economic Affairs 536655 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. Apply for a patent Double-layer structure composed of chromium (or chromium alloy) and molybdenum (or molybdenum alloy) 1 1 2 · The method described in item 1, 2, 3, 4, 5 or 6 of the scope of patent application, which Image signal wiring adopts a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy), or titanium (or titanium alloy) and aluminum (or aluminum alloy) and molybdenum (Or molybdenum alloy) three-layer structure, or three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and chromium (or chromium alloy), or composed of titanium (or titanium alloy), molybdenum (Or molybdenum alloy) and titanium (or titanium alloy) three-layer structure, or a three-layer structure consisting of titanium (or titanium alloy) and chromium (or chromium alloy) and molybdenum (or samarium alloy). 1 1 3 · According to the method described in item 7 of the scope of the patent application, the image wiring is a two-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or gold), or titanium (or Or titanium alloy) and inscription (or alloy of inscription) and molybdenum (or alloy of molybdenum) in three layers, or composed of titanium (or titanium alloy), aluminum (or aluminum alloy), and chromium (or chromium alloy) Three-layer structure, or a three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy) Structure, or a three-layer structure consisting of titanium (or titanium alloy) and chromium (or chromium alloy) and hafnium (or hafnium alloy). 1 1 4 · According to the method described in item 8 of the scope of patent application, the image signal wiring adopts a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy), or A three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum); ) Consisting of a three-layer structure, or a three-layer structure consisting of titanium (or a titanium alloy), molybdenum (or a molybdenum alloy), and titanium (or a titanium alloy), or consisting of titanium (or a titanium alloy) and chromium (or a chromium alloy) With steel (or samarium alloy) 71 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -------- ΜΎ ------ Order ------ Φ (Please (Please read the notes on the back before filling out this page) 536655 A8 B8 C8 D8 6. Three-layer structure composed of patent application scope. ★ Apply the method described in item g of the patent scope, its image (please read the notes on the back and fill in this tribute) U Wiring 疋 & uses 鈇 (or titanium alloy), inscription (or inscription alloy) and Three-layer structure composed of Chin (or titanium alloy), or three-layer structure of titanium (or alloy of titanium) and inscription (or alloy of inscription) and indium (or alloy of thallium), or composed of titanium (or titanium alloy), Ming (or Ming alloy) and chromium (or chromium alloy) three-layer structure, or three-layer structure consisting of titanium (or titanium a gold) molybdenum (or molybdenum alloy) and titanium (or titanium alloy) k or A three-layer structure consisting of titanium (or titanium alloy) and chromium (or chromium alloy) and pins (or indium alloy).口 '1 1 6 · According to the method described in item i 〇 of the patent application scope, the image signal wiring is made of titanium (or titanium alloy), aluminum (or aluminum alloy), and titanium (or titanium alloy). Layer structure, or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium ( Or chromium alloy), or a three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy), or titanium (or titanium alloy) and chromium ( Or chromium alloy) and molybdenum (or molybdenum alloy) three-layer structure. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 1 7 · As described in item ii of the scope of patent application, the image registration wiring is made of titanium (or titanium alloy), inscription (or inscription alloy) and titanium ( Or titanium a gold) two-layer structure, or “(or an alloy of titanium) with the inscription (or an alloy of the inscription) and three layers of molybdenum (or an alloy of the molybdenum), or composed of titanium (or a titanium alloy), the inscription (Or no alloy) and chromium (or chromium alloy) three-layer structure, or a three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy) ^ 'or Titanium (or titanium alloy) and complex (or complex alloy) and molybdenum (or folded 72) This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) 536655 A8 B8 C8 D8 Employee Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Printed a three-layer structure consisting of patent applications (gold). 1 1 8 · According to the method described in item 12 of the scope of patent application, the image signal wiring uses a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy). Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and I mesh (or an alloy of I mesh), or composed of titanium (or a titanium alloy), an inscription (or an alloy), and chromium (or chromium) Three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy) consisting of three-layer structure ie 'or consisting of titanium (or titanium alloy) and chromium (or A three-layer structure consisting of chromium alloy) and thorium (or in-mesh alloy). 1 1 9 · According to the method described in item 13 of the scope of patent application, the image signal wiring is a three-layer structure composed of titanium (or titanium alloy), aluminum (or samarium alloy) and titanium (or titanium alloy). Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or a chromium Alloy) or three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy), or consisting of titanium (or titanium alloy) and chromium (or chromium alloy) ) Three-layer structure composed of molybdenum (or molybdenum alloy). 120 · The method described in the scope of application for patents No. 14, 15 or "The video signal wiring is a double-layer structure of titanium (or titanium alloy) and M or Ming alloy), or is made of titanium (or titanium alloy) And _ (or indium alloy) double-layer structure, or a double-layer structure composed of chromium (or chromium alloy) and pin (or flip alloy). 1 2 1 · According to the method described in the scope of the patent application] 丄 利 古乐 17, the bean image signal wiring is made of titanium (or titanium and eight-person tuyere gold), aluminum (or aluminum alloy) and titanium ( ------------- 丨 Order ------ 0 (Please read the notes on the back before filling in this page) 536655 A8 B8 C8 D8 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Three-layer structure consisting of patent application scope or Chin alloy, or rhenium (or titanium alloy) and Ming (or Shao alloy) and molybdenum (or Molybdenum alloy) or three-layer structure consisting of titanium (or titanium alloy), aluminum (or aluminum alloy) and chromium (or chromium alloy), or titanium (or titanium alloy), molybdenum (or A three-layer structure consisting of molybdenum alloy) and titanium (or titanium alloy), or a three-layer structure consisting of titanium (or titanium alloy) and chromium (or chromium alloy) and molybdenum (or key alloy). 1 2 2 · As described in item 18 of Shenjing's patent scope, the “h” wiring of the 苴 image is made of titanium (or titanium alloy), Ming (or I Lu alloy) and titanium (or titanium alloy). Layer structure, or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and rhenium (or an alloy of platinum), or composed of titanium (or a titanium alloy), Ming (or Shao alloy), and chromium ( Or chromium alloy), or a three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy), or titanium (or titanium alloy) and chromium ( Or chromium alloy) and molybdenum (or molybdenum alloy) three-layer structure. 1 2 3 · According to the method described in item 9 of the scope of patent application, the image signal wiring uses a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy). Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or a chromium Alloy) consisting of a three-layer structure: or an i-layer structure consisting of titanium (or a titanium alloy), molybdenum (or a molybdenum alloy), and titanium (or a titanium alloy), or consisting of titanium (or a titanium alloy) and chromium (or a chromium alloy) ) And three layers of molybdenum (or molybdenum Z gold). 1 2 4. According to the method described in Item 20 of the scope of patent application, the image signal wiring is made of titanium (or titanium alloy), inscription (or inscription alloy), and Qin ^ -------- ΜΎ- ----- Order ------ Φ (Please read the notes on the back before filling this page) 536655 A8 B8 C8 D8 VI. Three-layer structure consisting of patent applications or titanium alloys, or a three-layer structure consisting of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or Three-layer structure consisting of titanium (or titanium alloy), inscription (or inscription alloy), and chromium (or chromium alloy), or composed of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy) Consists of a three-layer structure, or a three-layer structure consisting of titanium (or a titanium alloy) and chromium (or a chromium alloy) and molybdenum (or a molybdenum alloy). 1 2 5 · According to the method described in item 21 of Shenjing's patent, the image signal wiring adopts a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy). , Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and rhenium (or an alloy of indium), or made of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or chromium) Three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy), or three-layer structure consisting of titanium (or titanium alloy) and chromium (or chromium Alloy) and three layers of molybdenum (or molybdenum alloy). 1 2 6 · According to the method described in item 22 of the scope of patent application, the image signal wiring adopts a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy). Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or a chromium Alloy) or three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy), or consisting of titanium (or titanium alloy) and chromium (or chromium alloy) ) Three-layer structure composed of molybdenum (or molybdenum alloy). 1 2 7 · According to the method described in item 23 of the scope of patent application, the image h number wiring is made of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (--------- -— (Please read the precautions on the back before filling out the tribute), 1T · d Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A8 B8 C8 D8 patent application scope or three-layer structure consisting of Chin alloy, or three-layer structure consisting of titanium (or alloy of titanium) and aluminum (or alloy of aluminum) and molybdenum (or alloy of molybdenum), or consisting of titanium (Or titanium alloy) three-layer structure consisting of Ming (Goming 6 gold) and network (or alloy of network), or composed of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy) Three-layer structure, or a three-layer structure composed of titanium (or titanium alloy) and chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 1 2 8 · According to the method described in item 24 of the scope of patent application, the image signal wiring adopts a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy). Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or a chromium Alloy) or three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy), or consisting of titanium (or titanium alloy) and chromium (or chromium alloy) ) Three-layer structure composed of molybdenum (or molybdenum alloy). 1 2 9 · According to the method described in item 25 of the scope of patent application, the image signal wiring adopts a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy). Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or a chromium Alloy) or three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy), or consisting of titanium (or titanium alloy) and chromium (or chromium alloy) ) Three-layer structure composed of molybdenum (or molybdenum alloy). 1 3 0 · According to the method described in item 26 of the scope of patent application, the image signal wiring is made of titanium (or titanium alloy) 'aluminum (or aluminum alloy) and titanium (---------— (Please read the precautions on the back before filling out this page), 1T printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs mi 1 ^ 1 536655 A8 B8 C8 D8 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Three-layer structure consisting of patent applications _ or titanium alloys, or titanium (or titanium alloys) and aluminum (or aluminum alloys) and molybdenum ( Or an alloy of molybdenum), or a three-layer structure consisting of titanium (or a titanium alloy), I (or an alloy) and chromium (or an alloy of chromium), or of titanium (or a titanium alloy), indium (Or molybdenum alloy) and titanium (or titanium alloy), or a three-layer structure consisting of (or titanium alloy) and chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 1 3 1 · According to the method described in item 27 of the scope of patent application, the image signal wiring is a three-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy). Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or a chromium Alloy) or three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy), or consisting of titanium (or titanium alloy) and chromium (or chromium alloy) ) Three-layer structure composed of molybdenum (or molybdenum alloy). 1 3 2 · According to the method described in item 28 of the scope of patent application, the image signal wiring uses a two-layer structure composed of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium a gold). , Or a three-layer structure of titanium (or an alloy of titanium) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or composed of titanium (or a titanium alloy), aluminum (or an aluminum alloy), and chromium (or chromium) Three-layer structure consisting of titanium (or titanium alloy), molybdenum (or molybdenum alloy), and titanium (or titanium alloy), or three-layer structure consisting of titanium (or titanium alloy) and chromium (or chromium Alloy) and three layers of molybdenum (or molybdenum alloy). α 1 3 3 · According to the method described in item 29 of the scope of patent application, the image signal wiring is made of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium \ This paper size applies Chinese national standards (^ ΤΓ4 · (210x297 public envy) ----'------ (Please read the precautions on the back before filling this page) Order. 'Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economy 536655 A8 B8 C8 D8 _ 6. Three-layer structure consisting of patent application scope or titanium alloy), or a three-layer structure consisting of titanium (or an alloy of titanium) and Ming (or an alloy of Lu) and molybdenum (or an alloy of molybdenum), or composed of titanium (or Titanium alloy), aluminum (or aluminum alloy) and chromium (or chromium alloy) three-layer structure, or three layers of titanium (or titanium alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy) Structure, or a three-layer structure composed of titanium (or titanium alloy) and chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 1 3 4 · The method described in item 30 or 31 of the scope of the patent application 'its image signal wiring is a three-component consisting of titanium (or titanium alloy), aluminum (or aluminum alloy) and titanium (or titanium alloy) Layer structure, or a three-layer structure of titanium (or an alloy) and aluminum (or an alloy of aluminum) and molybdenum (or an alloy of molybdenum), or titanium (or an alloy), aluminum (or an aluminum alloy), and chromium ( Or a chromium alloy), a three-layer structure, or a two-layer structure consisting of titanium (or a titanium alloy), molybdenum (or a molybdenum alloy), and titanium (or a titanium alloy), or titanium (or a converging alloy) and chromium ( Or chromium alloy) and molybdenum (or molybdenum alloy) three-layer structure. 1 3 5 · According to the method described in item 32 of the patent application, the image signal wiring is made of titanium (or titanium alloy), aluminum ( Or aluminum alloy) and titanium (or titanium alloy) two-layer structure, or titanium (or titanium alloy) and Shao (or aluminum alloy) and molybdenum (or molybdenum alloy) three-layer structure, or titanium (or Or titanium alloy), aluminum (or aluminum alloy), and chromium (or chromium alloy) three-layer structure, or composed of titanium (or titanium Alloy), molybdenum (or molybdenum alloy) and titanium (or titanium alloy) three-layer structure, or a two-layer structure consisting of titanium (or titanium alloy) and chromium (or chromium alloy) and molybdenum (or molybdenum alloy). 1 3 6 'The method described in item 1, 2, 3, 4, 5 or 6 is to locally limit the deposition area of the gate insulation film to valid days (please read the precautions on the back before filling in (This page), the paper standard is applicable to Zhongguanjia Standard (CNS) Eighty-fourth Secret (21 () > < 297 Gongqing-536655 A8 B8 C8 D8 VI. Patent application area, video signal wiring terminal area And the static component area. Active protection for table 1 3 7. As described in the 7th patent application scope, the deposition area of the ^ electrode insulation film is locally limited to the area of the terminal part and the static electricity of the gate signal wiring. The countermeasure uses 区域 = area and image. 咬 King moving element area 1 3 8 · As described in the scope of the patent application No.8, the deposition area of the oligopolar insulation film is locally limited to valid = '. Terminal area and protection against static electricity: movable = parts `` wiring Protection of the terminal area and static electricity countermeasures: dynamic == 1 4 0 · As described in item 丄, 2, 3, and 范围 of the scope of patent application, the deposition from the interlayer insulation film = the distance from the end of the sub-portion and The distance from the end of the junction terminal of the insulation film to the reading of the questionnaire is 2 or more. 1 4 1 · If you want to use the method described in rhyme 7, the deposition boundary of the insulation film to the terminal of the sweep line The distance between the end and the active component for protection against static electricity from the gate deposition boundary: The distance between the end of the rafter is more than 2_. 142. The method described in item 8 of the scope of patent application is universal from the B-scale Chinese National Standard ((2 '. Super: 9 magic ------ MW-- (Please read the notes on the back before filling this page), 1T- printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A8 B8 C8 D8 patent application gate insulation film The distance from the deposition boundary to the end of the sweep line terminal and the distance from it: nn I m ::. 1 — I (Please read the precautions on the back before filling this page) The distance between the ends of the joint terminals of the active element is 2 or more. 143. The method as described in item 9 of the Chinese Patent Application, which refers to the distance from the end of the terminal of the deposition boundary line where the gate is absolutely unreliable, and from the deposition boundary of the interlayer insulation film to the protection of the active component for electrostatic countermeasures. The distance between the ends of the terminals is 2 or more. 1 4 4 · According to the method described in the scope of patent application No. 1, 2, 3, 4, 5 or 6, order the connection of the common electrode that crosses the scan line g and the common electrode that crosses with the Jingduo image wiring In part, it is located outside the region of the pole insulation film between local depositions. 1. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 4 5 · As described in the patent application method No. 2, 3, 4, 5, or 6, the image signal wiring is made of titanium silicide and aluminum (Or aluminum alloy) two-layer structure, or molybdenum silicide and aluminum (or aluminum alloy) two-layer structure, or chromium silicide and aluminum (or aluminum alloy) two-layer structure, or titanium A two-layer structure consisting of silicide and molybdenum (or molybdenum alloy), or a two-layer structure consisting of second compound and molybdenum (or molybdenum alloy), or a two-layer structure consisting of chromium silicide and molybdenum (or molybdenum alloy). • II-I 1 4 6 · According to the method described in item 7 of the patent application scope, the image signal wiring is a two-layer structure composed of a silicide of titanium and aluminum (or aluminum alloy) Shao (or Shao alloy) two-layer structure, or chromium two-layer structure composed of lithium oxide and aluminum (or aluminum alloy), or two-layer structure composed of titanium silicide and hafnium (or surface alloy) 'or The second layer of the surface and the pin (or indium alloy) form a two-layer structure, or the silicide of chromium and molybdenum (or molybdenum alloy) ^ The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ----- ----- 08 536655 A8 B8 C8 Six, two-layer structure composed of patent applications. 147. The method described in item 8 of the scope of patent application, wherein the image signal wiring is a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or molybdenum silicide and aluminum (or aluminum alloy) A two-layer structure consisting of a stilbite compound of selenium dichromate and is (or a Ming alloy), a two-layer structure consisting of a titanium material (or! Mesh alloy), or an indium halide compound ( Or alloy) to form a two-layer structure, or a two-layer structure composed of chromium silicide and rhenium (or key alloy). 148. The method described in item 9 of the scope of patent application, wherein the image signal wiring is a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or molybdenum silicide and aluminum (or aluminum alloy) The two-layer structure composed of silicide of dichromium and aluminum (or aluminum alloy), or the two-layer structure of silicide of titanium and molybdenum (or molybdenum alloy), or the silicide of molybdenum and molybdenum ( Or a molybdenum alloy) to form a two-layer structure, or a two-layer structure composed of a silicide of chromium and molybdenum (or a molybdenum alloy). 1 4 9 · According to the method described in item i 〇 of the scope of patent application, the image signal wiring is a two-layer structure ie composed of titanium silicide and aluminum (or aluminum alloy), or tritium stone oxide and inscription. (Or Ming alloy) two-layer structure, or two-layer structure composed of silicide of chromium and aluminum (or aluminum alloy), or two-layer structure of titanium silicide and molybdenum (or molybdenum alloy), or molybdenum Silicide and molybdenum (or molybdenum alloy) form a two-layer structure, or chromium silicide and molybdenum (or molybdenum alloy) form a two-layer structure. 1 50 · According to the method described in item 1 i of the scope of patent application, the image ^ number wiring is a two-.--. 81 _. This paper is composed of titanium lithium oxide and Shao (or Shao alloy). Standards are applicable to China National Standard (CNS) A4 specifications (210X297 mm) " ------ (Please read the notes on the back before filling out this page}-Ordered · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 536655 A8 B8 C8 D8 VI. Scope of patent application (please read the precautions on the back before filling this page) Layer structure 'or a two-layer structure consisting of stone compounds and | g (or Ming alloy), or chromium stone A two-layer structure consisting of a silicide and aluminum (or an aluminum alloy), or a two-layer structure consisting of a silicide of titanium and a hafnium (or a molybdenum alloy), or a two-layer structure consisting of a silicide of molybdenum and a molybdenum (or molybdenum alloy), or A two-layer structure composed of silicide of chromium and molybdenum (or molybdenum alloy). 1 5 1 · As described in item 12 of the patent application, the video signal wiring is made of titanium silicide and aluminum (or aluminum). Alloy), or a silicide of molybdenum and aluminum (or Alloy), or a two-layer structure composed of chrome lithium oxide and indium (or ming alloy), or a two-layer structure composed of tritium lithium oxide and molybdenum (or molybdenum alloy), or silicidation of molybdenum Materials and molybdenum (or molybdenum alloy) to form a two-layer structure, or chromium silicides and molybdenum (or molybdenum alloy) to form a two-layer structure. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 5 2 13 The method described in item 3, wherein the video signal wiring system adopts a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of molybdenum stone oxide and aluminum (or aluminum alloy) , Or a two-layer structure composed of chromium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of titanium stone and molybdenum (or molybdenum alloy), or tritium stone oxide and molybdenum (or molybdenum alloy) ) Form a two-layer structure, or a two-layer structure composed of chrome lithium oxide and molybdenum (or I-alloy). 1 53 · The method described in item 14, 15 or 16 of the scope of patent application 'its image signal The wiring system uses Yu Qin's fragmented material and Shao (or Cui Lu alloy) Composed of a two-layer structure composed of a molybdenum petrified compound and an ingot (or an alloy of indium), or a two-layered structure composed of a silicide of chromium and aluminum (or an aluminum alloy), or a petrified compound of titanium and Two-layer structure composed of molybdenum (or molybdenum alloy), or _ 82_ This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 536655 A8 B8 C8 -----D8 6. Apply for a patent ΪΪ " The silicide of molybdenum and molybdenum (or molybdenum alloy) form a two-layer structure, or the two-layer structure of silicide of chromium and molybdenum (or molybdenum alloy). 1 5 4 · The method described in item 17 of the scope of patent application , Its image k wiring uses a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of molybdenum silicide and aluminum (or aluminum alloy), or chromium silicide and Aluminum (or aluminum alloy) two-layer structure, or titanium silicide and molybdenum (or molybdenum alloy) two-layer structure, or molybdenum silicide and molybdenum (or molybdenum alloy) two-layer structure, or chromium A two-layer structure composed of silicide and molybdenum (or molybdenum alloy). 1 5 5 · According to the method described in item i 8 of the scope of patent application, the image signal wiring is a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or molybdenum silicide and aluminum (or Aluminum alloy), or a two-layer structure composed of chromium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of titanium silicide and molybdenum (or molybdenum alloy), or molybdenum silicide Form a two-layer structure with molybdenum (or molybdenum alloy), or a two-layer structure consisting of chromium silicide and molybdenum (or molybdenum alloy). 1 5 6 · According to the method described in item 19 of the scope of patent application, the image #wiring line uses a one-layer structure composed of osmium sulphide and I Lu (or Ming alloy) or osmium sulphide and Ming (or Ming alloy) consists of a two-sound structure, or a two-layer structure consisting of chrome silicide and aluminum (or aluminum alloy), or a two-layer structure consisting of chitinite and molybdenum (or molybdenum alloy), Or the silicide of molybdenum and molybdenum (or molybdenum alloy) form a two-layer structure, or the two-layer structure of silicide of chromium and rhenium (or indium alloy). 1 5 7 · As described in the method described in the scope of patent application No. 20, its shadow ------------ (Please read the precautions on the back before filling this page},-the intellectual property of the Ministry of Economy Printed by Bureau Consumers Cooperative 536655 A8 B8 C8 D8 6. Patent application scope Image signal wiring system uses a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of molybdenum silicide and aluminum (or aluminum alloy) , Or a two-layer structure composed of chrome lithium oxide and Ming (or | g alloy), or a two-layer structure made of titanium lithium oxide and molybdenum (or molybdenum alloy), or molybdenum silicide and molybdenum (or transmutation) Alloy) to form a two-layer structure, or a two-layer structure consisting of chromium silicide and molybdenum (or molybdenum alloy). 1 5 8 · According to the method described in item 21 of the scope of patent application, the image L wiring is a two-layer structure composed of “Shi Xihua and Shao (or | Lu alloy)” or 锢 silicide and A two-layer structure composed of aluminum (or aluminum alloy), or a two-layer structure composed of silicide of chromium and aluminum (or aluminum alloy), or a two-layer structure of silicide of titanium and molybdenum (or molybdenum alloy), or chromium A two-layer structure consisting of silicide and molybdenum (or rhenium alloy). 1 5 9 · According to the method described in item 22 of the scope of patent application, the image signal wiring is a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or molybdenum silicide and aluminum (or Aluminum alloy), or a two-layer structure composed of chromium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of titanium silicide and molybdenum (or molybdenum alloy), or molybdenum silicide Form a two-layer structure with molybdenum (or molybdenum alloy), or a two-layer structure consisting of chromium silicide and molybdenum (or molybdenum alloy). 160. According to the method described in item 23 of the scope of patent application, the image signal wiring is a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or molybdenum silicide and aluminum (or Aluminum alloy) consists of a two-layer structure or a chromium two-layer structure consisting of a lithium oxide and a Ming (or Ming alloy), ^ qin = a two-layer structure consisting of a stone oxidizing material and a turning (or turning alloy), or a pin Shi Xihua and the paper size of the paper are subject to the Zhongguanjia Standard (CNS) Α4 · (21 () χ297ϋ) " ______ --------- Φ II (Please read the precautions on the back before filling this page } ， 1T printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 536655 A8 B8 C8 _______ D8 VI. The scope of patent application (or samarium alloy) constitutes a two-layer structure, or the two-layer structure composed of chromium silicide and molybdenum (or molybdenum alloy) Structure.-(Please read the notes on the back before filling this page) 1 6 1 · As for the method described in item 24 of the scope of patent application, the image signal wiring is made of titanium silicide and aluminum (or aluminum Alloy) consisting of a two-layer structure 'or hafnium silicide and aluminum (or aluminum Gold), two-layer structure composed of silicide of chromium and aluminum (or aluminum alloy), or two-layer structure composed of silicide of titanium and molybdenum (or molybdenum alloy), or silicide of molybdenum and Molybdenum (or key alloy) constitutes a two-layer structure, or a two-layer structure composed of chromium silicide and molybdenum (or molybdenum alloy). 1 6 2 · The method as described in item 25 of the scope of patent application, its image signal wiring It uses a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of molybdenum silicide and aluminum (or aluminum alloy), or chromium silicide and aluminum (or aluminum alloy) The two-layer structure consisting of silicide of titanium and molybdenum (or molybdenum alloy), or the two-layer structure of silicide of molybdenum and molybdenum (or molybdenum alloy), or the silicide of chromium and molybdenum (or Molybdenum alloy) two-layer structure. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 163. According to the method described in item 26 of the patent application, the image signal wiring is made of titanium silicide and aluminum ( Or aluminum alloy) two-layer structure, or molybdenum Two-layer structure consisting of a silicide and aluminum (or aluminum alloy), or a two-layer structure consisting of a silicide of chromium and aluminum (or an aluminum alloy), or a two-layer structure consisting of a silicide of titanium and molybdenum (or a molybdenum alloy), Or the silicide of molybdenum and molybdenum (or molybdenum alloy) form a two-layer structure, or the two-layer structure of silicide of chromium and molybdenum (or molybdenum alloy). ° 1 6 4 · As described in item 27 of the scope of patent application The method, its shadow "85 paper size is applicable to China National Standards (CNS) 8 4 secrets (210 × 297 mm) ----------- 536655 Scope of patent application-(Please read the precautions on the back before filling this page} The image signal wiring system uses a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or molybdenum silicide and aluminum (Or aluminum alloy) two-layer structure, or chromium silicide and aluminum (or aluminum alloy) two-layer structure, or titanium silicide and molybdenum (or molybdenum alloy) two-layer structure, or molybdenum Lithium oxide and molybdenum (or osmium gold) form a single-layer structure, or chrome-lithium oxide and osmium (or molybdenum alloy) two-layer structure. 1 6 5 · Method as described in item 28 of the scope of patent application , Its image signal wiring system uses a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy), or a two-layer structure composed of molybdenum silicide and aluminum (or aluminum alloy), or chromium silicide and aluminum (Or aluminum alloy) two-layer structure, or titanium silicide and molybdenum (or molybdenum alloy) two-layer structure, or molybdenum silicide and molybdenum-order (or molybdenum alloy) two-layer structure, or chromium A two-layer structure consisting of silicide and molybdenum (or molybdenum alloy). Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 6 · As described in item 29 of the patent application method, the image signal wiring uses a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy) , Or a two-layer structure consisting of silicide of molybdenum and aluminum (or aluminum alloy), or a two-layer structure consisting of silicide of chromium and aluminum (or aluminum alloy), or a silicide of titanium and molybdenum (or molybdenum alloy) A two-layer structure consisting of a silicide of molybdenum and molybdenum (or an alloy) or a two-layer structure consisting of a silicide of chromium and molybdenum (or a molybdenum alloy). 1 6 7 〇 or 31 The method described in item 1 of the shirt image "U Germany wiring system uses a two-layer structure composed of Chin's fragment and Ming (or Shao alloy), or molybdenum silicide and aluminum (or aluminum alloy) 'Two-layer structure' or a two-layer structure consisting of silicide of chromium and aluminum (or aluminum alloy), or _____ 86____ This paper size applies to China National Standards (CNS) Eighty-fourth Secret (21GX297 mm) "- --- 536655 A8 B8 C8 D8 A two-layer structure consisting of a compound and molybdenum (or a molybdenum alloy), or a two-layer structure consisting of a silicide of molybdenum and molybdenum (or a molybdenum alloy), or a two-layer structure consisting of a silicide of chromium and molybdenum (or a molybdenum alloy). 1 6 8 · According to the method described in Item 32 of the scope of patent application, the image signal wiring is a two-layer structure composed of titanium silicide and aluminum (or aluminum alloy) 'or indium silicide and aluminum (or aluminum) Alloy), a two-layer structure consisting of chromium silicide and aluminum (or aluminum alloy), or a two-layer structure consisting of titanium silicide and molybdenum (or molybdenum alloy), or molybdenum silicide and Molybdenum (or molybdenum alloy) forms a two-layer structure, or a two-layer structure consisting of chromium silicide and molybdenum (or molybdenum alloy). 1 6 9 · A liquid crystal display device comprising a pair of substrates with at least one transparent substrate and a liquid crystal composition sandwiched between the substrates, wherein a substrate surface opposite to any one of the substrates just described is disposed on the surface of the substrate. The matrix-shaped complex scanning line, the image signal wiring, the day element electrode paired with the common electrode, and the active element connected to the magic element electrode, the scanning element line and the foregoing image signal are connected; its characteristics are: The film thickness of the pixel common electrode paired with the liquid crystal driving electrode is thinner than the film thickness of the scanning line. 1 70 · A type of transverse electric field active matrix liquid crystal display device, comprising a pair of substrates at least one of which is transparent, and a liquid crystal composition sandwiched between the substrates; A matrix-shaped complex scanning line, an image signal wiring, a daylight electrode pair with a common electrode j, an active element connected to the daylight electrode, and the scanline and the image signal are arranged on the surface of the opposite substrate. ; Its characteristics are: ----------- (Please read the notes on the back before filling out this page), 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536655 A8 B8 C8 D8 The scope of patent application The pixel common electrode thickness of the pair of liquid crystal drive electrodes is thinner than that of the aforementioned cat line. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 8 8 This paper size applies to China National Standard (CNS) A4 (210X297 mm)