TW529135B - Semiconductor device and fabrication process thereof - Google Patents

Abstract

A fabrication process is adapted for fabricating a semiconductor device having a substrate in a form of a film holding a semiconductor chip having an electrode on one side thereof, a though opening formed through the substrate at a position corresponding to the semiconductor chip, a conductor formed within the through opening by a plated layer and connected to the electrode of the semiconductor chip, and the through opening having a first opening portion on the semiconductor chip side whose width is smaller than that of a second opening portion on the other side. The process comprises the steps of forming a through opening through a substrate after holding a semiconductor chip on one surface of the substrate as a film, and forming a conductor formed of a plating layer within the through opening to connect the conductor to an electrode of the semiconductor chip.

Description

529135

[Background of the Invention] [Field of the Invention] More particularly, the present invention relates to a high-density mounting. A semiconductor device and a manufacturing device thereof and a manufacturing method thereof. [Explanation of the related technology] New forms of semiconductor packaging have been developed one after another, with high performance, smaller size, lighter weight, and more demand. For example, by reducing the size of the semiconductor device and achieving a higher packaging density of the semiconductor wafer, lighter weight electronic equipment can be achieved. In order to achieve a higher packing density of semiconductor wafers, the number of half-pins has been increased. With the connection between the body chip of the semiconductor chip and the lead frame, a wireless bonding wire bonding system is often used as a bonding system to allow the semiconductor wafer pad to be connected to the wiring lead frame or external electrodes in an overlapping manner. This is called gang bonding. A tape automated bonding (TAB) system is used as a bonding system. In the TAB system, a plurality of wirings are formed in a tape-like manner by overlapping the guides formed on a substrate in a tape-like manner on a portion corresponding to the electrodes of the semiconductor wafer. In the meantime, the correspondence between the electrode pads of the wafer and the internal lead frame of the substrate is used to meet the requirements of electricity and higher speed and thickness in small size and increase in conductor wafers, semiconducting systems. Unmatched electrode bonding is used as a splicing joint-a kind of non-wiring. After a suitable rectangular solid lead frame overlaps the semiconductor part, 529135 V. Description of the invention (2) It is called an internal lead frame by thermal compression bonding or supersonic; : Wave: = The overlapping parts are connected together, which has been disclosed in Japanese Unexamined Specialist Example 2f. The internal lead frame joining industry is shown in Figures 9A to 9H. Known :: Heisei No. 8_1 02466. Manufacture method of the body device ^ The semi-conductor of the internal lead frame bonding is first described as shown in FIG. 9A. Within the range of ten // m. The thickness of the base plate 72 of a card portion 1 is located on its main surface. Another surface (aiheSiVe) 73 is coated on the substrate 72. An electrical material such as Cu or the like is used: a through hole 71 is formed in the plate. Guide 741. The deceased emperor of the United States will fill the through-hole 71 to form a conductor earth plate 72 which is not coated with the adhesive 73 and contacts the conductor 741. | ^ ^ 71 + y is formed as a wiring 74, such as copper, to or the like ::: As shown in Figure 9B, in the precise positioning conditions, the base second m On the conductor wafer 1. Subsequently, 'H 2 and H 2 are bonded to the semiconductor wafer 1 by continuous heating and pressure. The electrode bonding pad 10 is provided along the outer peripheral portion of the body sheet 1. However, electrode bonding pads have been placed in the active area. -Metal 'is typically a type alloy, which is a material used to form electrode bonding pads. The person then, as shown in FIG. 9C, performs internal lead frame bonding, and the substrate is connected to the substrate in the manner of thermal ultrasonic wiring bonding with the following method: 2 ^ half, said ^ 1. In this example, since thermal conditions are required in thermal compression wiring bonding, thermal ultrasonic wiring bonding is used. By this joining, the shell / mouth shape 529135 V. Description of the invention (3) '--- The aluminum of the electrode bonding pad 10 of the sheet 1 and the copper forming the substrate 72 are cast into an alloy. Therefore, the connection portion can be strengthened. Then, as shown in Fig. QD, the bonding of V / substrate 72 on the opposite surface of the & 1 1 surface, ... ,, on the spear surface, a solder ball with a predetermined pattern is formed. Subsequently, as shown in FIG. 9E, the copper or copper + π knife (the part used to set the external electrode in the subsequent process steps) is placed. Therefore, as shown in FIG. 9F, for the plated product 78 in the subsequent process = where: a solder bump 79 is formed as an external electrode. Subsequently, "the printed board 710 formed by glass epoxy #: or ΪΓ; ΐ: is not after the outer contour of the knife brake (not shown), and is connected to the solder bump. Finally, in order to ensure that the printed board 71 〇 and solder The connection between the protrusions 79 ^ strengthen the tree injection between the printed board 71G and the substrate 72, and is determined by adding β. A semiconductor device is manufactured through the described manufacturing method. ',', Another-side, the practice of semiconductor devices Another known manufacturing method is the manufacturing method of the known semiconductor device disclosed in Japanese Unexamined Patent Publication No. Heisei 10-1510116, which is shown in FIGS. 1 to 2 and is shown in FIGS. 1 to 10. Η The conventional manufacturer of the semiconductor device shown: As shown in FIG. 10A, the polyimide 'insulating substrate 8 2 is still used in the manufacture of semiconductor devices, similar to that shown in FIGS. 9A to 99. Manufacturing method. In the conventional manufacturing method of the semiconductor device shown in 10A to 10A, ^ 84 丨 is deposited on one of the major surfaces of the substrate W. The copper deposit on the substrate 82 is removed by the remaining time. Unnecessary part to form such as f, wiring 84. τ 岍 不 之 529135 five Description of the invention (4) lase〇 ′ ^ A ^ 〇82l ^? # Tt ^ (carbon gas Γ plane opening = 甬 =, the surface of the opposite side of the surface forming the wiring 84 forms a bayonet port 81. At this time, since ^ ^ ^ May cause incomplete removal of the residual resin 83 from the foaming residue in 81, as shown in Fig. 10E-followed by as shown in Fig. 10E. As shown, the wiring at the wiring 84 is mined to form a mineral layer 88. Furthermore, the semiconductor wafer i mounted on the substrate 82 is sealed as shown in F, and sealed in Ahn. As shown in FIG. 10G, the sealing material 810 is engaged with the fresh tin bump 89 to complete the semiconductor board shown in the printed board ... The conventional manufacturing method of the semiconductor device 〃 + V-body divergence encounters the following problems.习 Conventional semiconducting product made by the manufacturing method shown in 3. ‚Heating and cooling manufacturing steps' to complete the final production example, recorded in the manufacturing steps shown in Figure 9G, The connection between the Yin and the main board 71 0 is formed at a temperature of about 240 ° C, and ^ Α —tU-Partial Dust II, which is performed for 24 hours at a degree of about 125t. Semiconductor devices are subject to heat. In addition, in order to verify the reliability of the connection parts between the plating layer 75 on the wafer body 741 of the semiconductor device, and 7 to 9; p: rr, the reliability of the connection parts, hot standby _ ^^, put on a dry v body suit. In this thermal cycle test, the semiconductor device was placed in 529135

In environments where the temperature varies from -50 to +150 t:

Change hundreds of cycles, check the rupture or disconnection of the connected part. Check the reliability of the connected part. X force · / μ, the muscle π and the expansion of the solid part of the heart 1 are different. For example, when the semiconductor wafer i, the substrate 72, and the printed board 710 'are Si wafers, polyimide organic- / 〇 --- 〇ρρ-c, and 16 to 50 ppm / C, respectively. Since the thermal expansion coefficient of the current time, the semiconductor wafer placed between the wafer 1 and the electric pole == the joint between the J plate 710 under the same pressure, the difference between the expansion coefficient between / 72, 1 and the expansion of the substrate 俜 ^ 乂 and the heat outside the substrate 72 and the printed board 710 cause cracking or disconnection. In particular, since as a material, for example, r ^ a 1 79 ′ should be in contact with various materials having different expansion coefficients = printed board m, etc., in essence, since the connection between this terminal 2 and the printed board 710 is broken. As a avoidance: poor j: easy to cause the aforementioned rupture or the printing board 71 〇 and semiconductor clothing / sweat, provide a larger distance to 72, printed on the conductor, said 1 piece of film to allow semiconductor wafers 1. The a surface of the substrate connection surface and the connection between the substrate 72 and the printed board 710 provide a thicker sound: the stress on the connection portion. For example, a substrate 72 of a degree allows the printed board 71

529135 V. Description of the invention (6) The distance between (6) becomes larger to absorb the stress on the connecting part. In the superposition t, the conventional manufacturing method of the semiconductor device shown in Figs. 9A to 9 includes the bonding step shown in Fig. 9C. In the bonding process, after the sheet electrode 10 is bonded to the substrate 72, the side of the substrate 72 is bonded by the thermal ultrasonic wiring of the connector 76, so that the wafer electrode 10 is mechanically f and 'if the substrate 72 has Larger thickness to absorb the energy applied to the connection :: 士 Π 'In the joint manufacturing step, the energy applied by the joint tool 76 is absorbed or reached before reaching the joint part, so that energy is not transmitted The wafer electrodes fly onto the plated layer 75 as a connection portion to avoid connection errors.

Furthermore, since the thermosonic wiring is used to connect to A; the part near the connection part is cut as follows: two ^…: received and damaged. Thus, the damaged connection portion is attached: small, making it difficult to sufficiently absorb the stress. Female 7 Yan :: So, in the semiconductor device = method shown in FIG. 9, in order to avoid errors in the bonding manufacturing steps, the thickness of the substrate 72 must be limited to be less than or equal to the contact surface. Making the thickness of the substrate 72 smaller makes it difficult to absorb the stress applied to the connection part / knife, which leads to the breakage of the connection part and reduces the reliability of the connection. Good &# 厪 次 Reduce production-good drought, and therefore lead to production, in addition, in the conventional method of the semiconductor device shown in Figs. 9A to 9 (), as shown in Fig. 9 (), in order to obtain the main board 71 〇 and solder bumps with certainty

Page 10 529135 V. Description of the invention (7) The connection strength between the blocks 79 is subjected to a manufacturing step to heat and set a reinforcing resin 714 injected between the printed board 710 and the substrate 72. When the error occurs between the semiconductor wafer or the semiconductor wafer] and the printed board 71 °, such as wiring or the like, since the reinforced resin 714 is injected between the brush plate 71o and the substrate 72 to seal, it cannot be sealed. Repair the defective parts. Therefore, the 'maintenance ability' becomes low. On the other hand, in the conventional manufacturing method of the semiconductor device shown in FIGS. 10A to 1011, a through-hole 83 in the substrate 82 is connected to the substrate 8 2 and the semiconductor wafer 1 by laser. That is, as shown in FIG. 10F, after the wafer 1 is placed on the substrate 82, the semiconductor wafer is sealed by a sealing material 85. Generally, a thermosetting resin is often used as the sealing material π. Therefore, the bonding process of the semiconductor wafer 1 and the sealing material typically includes a heating process. In addition, in this example, the position mark on the substrate 82 and the semiconductor wafer] is calibrated under heating conditions, and the positioning is used to join the substrate 8 2 and the semiconductor wafer 1. However, as described above, in the semi-conventional manufacturing method shown in FIGS. 10A to 10H, a heating process is included in the bonding of the substrate 82 and the semiconductor process. In this example, since the expansion coefficients of the semiconductor wafer i and the substrate 82 are different from each other ', during the heating process, the semiconductor wafer core 82 undergoes thermal expansion at different ratios. Therefore, when placed, a dislocation (disccation) occurs between the wafer 1 and the substrate 82, making it difficult to join the substrate 82 and the semiconductor wafer at the correct position! . If the substrate 82 and the semiconductor wafer 1 are not bonded to the correct position, the connection resistance value increases, and the fresh tin bump 89 and the printed board 529135 as external electrodes are reduced due to the reduction of the connection area.

The connection force of the 81 joints is reduced, which may easily cause cracks or disconnections in the joints. Therefore, the manufacturing yield and productivity of semiconductor devices are reduced. [Summary of the Invention] The present invention has been made to solve the problems in the aforementioned conventional technologies. Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device, which achieves high productivity and a semiconductor device that can be manufactured with a high yield. ,

Another object of the present invention is to provide a method for manufacturing a semiconductor device and the semiconductor device capable of absorbing a stress applied to an external electrode. The method and method according to the present invention are included in a mouth after being applied, and a preferred chip is formed. The electricity is passed through the substrate in advance. Another semiconductor is described in the following steps of the present invention. A semiconductor is formed into a conductor, and the conductor is formed at the position of the penetrating pole. The purpose of manufacturing the yak and other devices The first aspect is to provide a device that can improve the holding capacity. A semiconductor device manufacturing wafer is held at one of the substrates as a film through the substrate through-hole; and: the body is formed by a plating layer &; Is located on one of the electrodes connected to the semiconductor wafer. Beton = Department e is placed in the substrate corresponding to the semiconductor crystal t. After the semiconductor wafer is held, the through-hole is made of money and the conductor is formed in the through-hole.

5. Description of the invention (9) The body can be connected to a semiconductor wafer. "Substrate. Therefore, printed boards and semiconductors can provide sufficient thickness to absorb and apply to the substrate and half: the distance between the two is wide enough to charge; force connection =, in the semiconductor device = connection part of the connection steps The energy is not only the part typically connected to the wiring, the conductor, or the surrounding connection part in the method, but also the ^ and other parts of the bonding tool used in the bonding. Furthermore, by ringing. So, the other parts If it is damaged, it can cause bad shadow. However, by the manufacturing method according to the present invention, the electrodes of the connector chip of the% connection part can not affect one another; 8 1 袢 Since the substrate and semiconductor Therefore, the success rate of the square connection part ... The productivity of the body device is broken or disconnected at the P-knife, which leads to the π or: method of the semiconductor. Since the semiconductor crystal line can be repaired, the material and the printed board can be improved. The part between them is, for example, prepared on the board :: The printed wiring composed of the plating layer can be formed in the shell port on the substrate to be integrated with the guide volume. Dan / ^ ^ ^ 体In the conventional manufacturing method of the device ' The connection to the substrate is referred to as a semiconductor wafer connection, and a wiring pattern η is provided in advance on the substrate. Therefore, 'Semiconductor crystals with the same semiconductor wafer and substrate formed:' are used to prepare semiconductor wafers with different wiring patterns. Semiconductor: The connection is made on each substrate with different wiring patterns, and the method of manufacturing different layers of the substrate with different wiring patterns is used. 529135 V. Description of the invention (10) However, 'in the present invention' Since the wiring composed of the mineral layer can be formed on the substrate and integrated with the guide volume, the wiring pattern can be formed on the substrate after the semiconductor wafer is bonded to the substrate. Therefore, from the same combination of the semiconductor wafer and the substrate It is possible to form a half-wafer with various wiring patterns to significantly shorten the manufacturing method of a semiconductor device. Therefore, a semiconductor device can be manufactured at a low cost. On the other hand, in the conventional manufacturing method, a wiring pattern is formed on another plate, and To contact the conductor after it has been formed in the through hole. Since the substrate is separated from the conductor and wiring: Under the condition that the impurities are deposited on the substrate, then the connection: points;: Sigu easily breaks or disconnects. However, according to the present invention, since the wiring is formed and the wiring can be synthesized with the conductor base-•, it is never Breaking or disconnecting between the 1 manufacturing with a high connection can be af = face 'In the present invention, # a plurality of semiconductor wafers are kept at the second house, and the resin is filled between the semiconductor wafers. Therefore, it can be easily destroyed. Semiconductor chip 22 + conductor device, in which the external electrode partition is located in the half of the second. In addition, it can repair the wiring chip to improve the retention between the 2 and the printed board ... such as wiring, so the invention can be used The second aspect'—manufacturer of a semiconductor device uses a plurality of semiconductor crystal planes; the sheet is held on a table as a film and a substrate 529135 V. Description of the invention (11) A predetermined opening is formed on the substrate At a position; filling resin between the plurality of semiconductor wafers; and forming a conductor formed by a plating layer in the through hole, and connecting the conductor to an electrode of the semiconductor wafer. According to a third aspect of the present invention, a method for manufacturing a semiconductor device includes: holding a plurality of semiconductor wafers on a surface of a substrate as a film; forming a through hole at a predetermined position on the substrate; Resin is filled between the plurality of semiconductor wafers; and a conductor formed by a plating layer is formed in the through hole, and the conductor is connected to an electrode of the semiconductor wafer, and a wiring formed by the plating layer is formed It is integrated with the guide volume on the substrate. According to a fourth aspect of the present invention, a semiconductor device includes: a substrate in the form of a film 'holds a semiconductor wafer 5 having an electrode on one side of the semiconductor wafer; a through-hole is formed corresponding to the semiconductor wafer In position, a conductor is formed in the through hole through the substrate through a plating layer, and is connected to the electrode of the semiconductor wafer, and the through hole has a first opening portion on the side of the semiconductor wafer The width of the first opening is smaller than the width of the second opening portion on the other side. With the aforementioned semiconductor device, since the phase on the side of the semiconductor wafer

Page 15 529135 V. Description of the invention (12) The opening of the through-hole on the opposite side ^ has a conductor, which can make the conductor and the abduction, and =, the through-hole is formed large so that the connection resistance is small: and Two :; even = the area is made comparative. In this way, it can be successfully prevented that the connection between the second strong J and the second strong office can force a higher manufacturing yield. The rupture and disconnection at the connecting blade is preferably to achieve that the diameter of the through opening is larger than the semiconductor crystallinity. By doing this, you can increase the resistance of the electrodes in the connected part. It is preferable that the strength of the blade can be reduced at the connection portion, and the thickness of the substrate is within 50 to. As a result, the distance between the substrate and the printed board is changed. Eighth: The stress applied to the connection portion between the substrate and the printed board. Because of the fracture and disconnection at the junction part to achieve a high manufacturing yield. When the electrodes connected to the outer boundary of the conductor are connected to the printed board, the peel strength is set within the range of 14 to 18 kgf / cmi. Thereby, the stress applied to the connection portion 9 between the substrate and the printed board can be sufficiently absorbed. Therefore, it is possible to successfully prevent cracking and disconnection at the connection portion to achieve a semiconductor device with a high manufacturing yield. According to a fifth aspect of the present invention, a semiconductor device includes: a substrate in the form of a film, which holds a semiconductor wafer having an electrode on one side of the semiconductor wafer; a through hole formed at a position corresponding to the semiconductor wafer Through the substrate; through a plated layer, a conductor is formed in the through hole and is connected to

Page 16 529135 V. Description of the invention (13) The electrode of the semiconductor wafer; a wiring of a keying layer is formed in the through hole and integrated with the guide volume; and the through hole has a first opening portion in the semiconductor On the side of the sheet, the width of the first opening is smaller than the width of the second opening portion on the other side. According to a sixth aspect of the present invention, a semiconductor device includes: a substrate in the form of a film, holding a semiconductor wafer, and an electrode on one side of the semiconductor wafer;

A through hole is formed at a position corresponding to the semiconductor wafer, and passes through the substrate; a conductor is formed in the through hole through a plating layer, and the electrode of the semiconductor wafer is connected; a wiring of the plating layer It is formed in the through hole and is connected with the ridge: fen T limb WS is formed as an external electrode on the substrate, and is connected to the removal strength within the range of 14 to 18 kgf / cm, so that the-'is made in the Printing board. Boundary electrode bonding [Detailed description of Che Fujia's embodiment] With reference to the drawings, the preferred embodiment of the present invention will be discussed in detail below with reference to the preferred embodiment of the present invention. For reference, the following details. ♦ Many specific details are provided in the description of the present invention. However, obviously, for those who are familiar with this technology, = fully understand. However, such details are not required

529135

The invention is implemented with specific details. The first rn shows an example of a semiconductor device manufacturing method according to the present invention. FIG. 2 shows an example of a semiconductor device according to the present invention. FIG. 3 shows an example of a semiconductor device according to the present invention. Fig. 4 shows another example of the second embodiment of the semiconductor device according to the present invention. First • A first embodiment of a semiconductor device according to the present invention is built-in in a package, such as a BGA (BaU Grid Array) or a CSP (Chip Size Package). Second: The embodiment of the semiconductor device has a fan-out structure, in which an external electrode is arranged outside the surface of the semiconductor wafer. On the other hand, the first embodiment of the semiconductor device according to the present invention is made of a TAB system to provide a plurality of wirings, and in a suitable manner, a wiring lead frame that overlaps and connects repeatedly formed conductors with a plurality of corresponding wirings. The electrode portion of a semiconductor wafer. In detail, the semiconductor device is manufactured by a 5-lead frame bonding system. After the electrode pads of the semiconductor wafer and the corresponding portion of the inner lead frame of the substrate overlap, the electrode pads of the semiconductor wafer and the inner lead frame of the substrate The corresponding parts are joined to each other. Next, referring to Figs. 1A to 1A, an embodiment of a method for manufacturing a semiconductor device according to the present invention will be discussed. As shown in Fig. 1A, when manufacturing a semiconductor device, a substrate 12 'is used, and one surface of the substrate is coated with an adhesive 13 thereon. The thickness of the substrate 12 is preferably in a range of 50 to 3 5 0 // m. In consideration of economy, a preferable range of the thickness of the substrate 12 is in a range of 50 to 100 0 // m. By setting the substrate 1 to 2

Page 18 529135 V. Description of the invention (15) Thickness. The thickness between the substrate 12 and the main board 110 can absorb the force. The stress is applied to the substrate. 2 years old and older, to allow application and soldering as an external electrode. The connection portions between the tuna brush plates 11 are connected. On the other hand, the substrate 12 is made of an imide resin: epoxy resin or the like of the plate 110: epoxy resin or the like: formed, for example, polyfluorene. Then, as shown in FIG. ， Semiconductor wafer 1 > 本 & u + # φ Jl is coated with Succeed adhesive 10, and the surface of the substrate 12 is formed with a semiconductor thermal sheet-as shown by the wafer electrode Γ-tree_: semiconductor;: = surface = After: m ί and the like are applied to the surface of the semiconductor wafer 1, however, to simplify the disclosure description, the object layer of the dagger is omitted in the illustration. It should be noted that, at this time, the manufacturing step of filling the resin i 6 into the half dagger 1 'must be replaced by t in the subsequent process (see FIG. 1F), which will be discussed later. Furthermore, by irradiating one side of the substrate 12 at a portion of the substrate 12 corresponding to the wafer #electrode 1 of the semiconductor crystal = 1, the opening of the through hole 11 is formed on the surface of the second surface. Pass through the substrate 1 2. In this embodiment, u v-γ a g (Ultraviolet-Yttrium Argon Garium) is used as the laser. The straightness of the through hole 11 is set in a range of 10 to 50 // m. On the other hand, the size of the opening portion of the gate 11 is set so that the width of the opening portion on the semiconductor wafer 2 $ is smaller than on the opposite side (on the side of the fresh electrode bump 19 as the external electrode). ) The width of the opening. Therefore, the through hole 11 is formed into a truncated cone shape.

Page 19

529135 V. Description of the invention (16) Subsequently, as shown in FIG. 1D, a Cu layer 15 as a conductor is formed by sputtering on the substrate 12 and has a thickness of about 1 // m. On the Cu layer 15, an electrolytic plating layer is formed using Cu to a thickness of 10 to 15. Thereby, the wafer electrode 10 of the semiconductor wafer 1 is connected to the conductor in the through hole Η. — A wiring 14 made of a mineral layer is formed on the substrate 12 and forms a conductor with the Cu layer 15. Therefore, a semiconductor device having high connection reliability can be obtained. As shown in FIG. 1E, on the wiring 14, a resist film 1Π having a pattern is coated. Furthermore, after the exposure and development of the resist film 1; 11, = 1, the portion 4 becomes the portion of the resist film 111 ☆, and the pattern rhyme engraving of the film 17 is performed. Then, for the solder resist film ", the exposure provided an opening portion η 2 where the steric hindrance at m / was removed, so that the bonding was performed at the opening portion 112 = middle (in the second example, by gold Or helmets and the like), and its thickness is about 0.1. Here, ..., electroplated clothing, to form a plating layer 18, with the commonly used electrolyte, dream can not only be achieved by Without electroplating, it must be followed, as shown in the figure: the bell layer 18. It is placed on the opening 丨 2 and the bottom and top are the solder bumps of the external electrode 19 and the connection between 11 and 12. The bran is used for brazing. In order to establish the semiconductor bump 19 and the surface of the opening), the external part of the resin 16 (here, AA, the table "2 is the second real semiconductor device". It is placed on the printed board u〇丨 !!!! The semiconducting guide obtained by the example shown in Table W, page 20, 529135

As shown in FIG. 2, the range from the semiconductor wafer 1 to the adhesive ㈣. Two brush plates: 1; the width is located at about 35 0 _ to 650 # ^ ^ ^ /, the connection between the semiconductor chip 1 and the adhesive 1 3 = the thickness of the solder resist film 17 is located at about 50 to 350 The range of " m ^ and !! The thickness between the solder resist film 17 and the printed board 110 is about 3G. _. The connection surface between the film 17 and the conductor chip 1 and the adhesive 13 to the solder resistance, most of the visibility is occupied by the substrate 12. Therefore, the thickness from the connection surface of the semiconducting 胶 ΓΛ glue Λ Qi ΓΓ to the fresh tin resist film 17 becomes equal to the thickness of the substrate 12 on the shell. According to this, the thickness of the substrate 2 provided by the embodiment of the semiconductor device 2 is within the range of 50 to 35. In consideration of economic efficiency, the substrate 12 is within the range of 50 to 100. In the actual yoke example of the semiconductor device, the preferred range of the thickness of the substrate 12 is 50 to 35 to sufficiently absorb the stress applied to the semiconductor wafer, and to apply the "connection between the conductor wafer 1 and the substrate 12" Part of the stress. On the other hand, the embodiment of the semiconductor device is formed: a wiring 14 composed of a plating layer is formed on the substrate 12 and one of the through holes 2. The layer 5 forms a conductor as a whole to obtain a semiconductor layer with high connection reliability. On the other hand, in the embodiment of the semiconductor device shown in FIG. 2, the solder bump 19 connected to the printed board 110 is pulled in the direction of the arrow B, and the printed board 110 and the solder as an external electrode are printed in the amount of $. Peel strength of the connection part between the bumps and 9 pieces. Therefore, the peeling strength of the connection portion between the solder bump 19 and the printed board is in the range of 14 to 18 kgf / cm. 529135 V. Description of the invention (18) '------ On the other hand, in the semiconductor device obtained by the feathers shown in Figs. 9A to 9H, the connecting part is peeled at a temperature of 16 kgf / cm. Within range. Accordingly, compared with the peeling strength of the semiconductor device located at 12 to by Xier II, the embodiment reduces the residual distortion of the large peeling strength. As mentioned above, in the semiconductor device of household appliances, for example, the strength between the solder bump and the printed board has been improved. & ^ Another aspect: In the embodiment shown, the opening portion 2 is placed on the wiring 14 on the substrate 12 and the solder bump 9 is provided on the opening portion 112. However, as in the semiconductor device shown in FIG. 3, the opening portion 212 may be provided on the wiring 14 ′ instead of the opening portion 2, and the wiring 14 is provided in the through-hole 11. In addition, as shown in FIG. 4 and FIG. 3, the conductor device is provided with an opening, and the hafnium plating layer is not placed in the through hole, and the diameter of the through hole 31 is set to be greater than the width of the wafer electrode 10, which can Successfully absorbed the stress applied to the connection portion between the semiconductor wafer substrates. In addition, the resistance of the chip electrode 0 can be reduced. It should be noted that the protective layers 213 and 313 are shown in FIGS. 3 and 4, and are omitted in FIGS. 1 and 2. ~ 8 Followed on, another embodiment of a toilet device according to a method of manufacturing a semiconductor device will be described with reference to the drawings. π to 5G show the manufacturing method of the semiconductor device according to the present invention, which is a coherent embodiment. FIG. 6 shows the second embodiment of the semiconductor device according to the present invention, and FIG. 7 shows the manufacturing method of the semiconductor device according to the present invention. A plan view of a manufacturing step of the second embodiment, FIG. 8 shows

Page 22 529135 V. Description of the invention (19) The first view of the manufacturing method of the semiconductor device in the manufacturing step of the embodiment. As shown in FIG. 5A to FIG. 5, the semiconductor device according to the present invention is: built in a package (bui 1 t-in) in a package, such as B0A (Bai i Π ΪΓ ball / ^ csp (Chlp Size Pac_, chip size package). The embodiment of the semiconductor device shown has a fan-in structure, in which one of the external electrodes is arranged on the surface of the semiconductor wafer m, so that the semiconductor wafer 1 is filled with resin a. Same as the manufacturing of a semiconductor device ^ On the other hand, in the embodiment shown, FIG. 7 shows a plan view of circle 0. 'The semiconductor wafer is formed with a through-hole U, which is directly related to the dream. The substrate 12 shown in FIG. 5 is formed on substrate 12 on semiconductor wafer 0 at a rate of about 2,000 per minute. The “Fang®” shown in FIG. 5G is popular. (On the surface of the crystal cutting 00, in the direction of the arrows of the cutting surfaces 61 and 62, a diamond cutter or the like is used to cut, as shown in FIG. 8, from the cutting = the surface 61 ΐ: ΐί surface 6 2 'semiconductor crystal Circle 0 is divided into individual grains: the process is incorrect, the use of A method of manufacturing a semiconductor device according to the embodiment 'shown in FIG. 6, the resin obtained is not half filled 16 v wafer coating of a semiconductor device having a fan (fan_in) structures.

Page 23 529135 V. Description of the invention (20) As mentioned above, according to the manufacturing method of the semiconductor device of the present invention, the thickness of the substrate can be made sufficiently large so that the distance between the printed board and the semiconductor wafer is sufficiently large. Therefore, the stress applied to the connection portion between the substrate and the wafer electrode on the semiconductor wafer can be sufficiently absorbed. Therefore, breakage or disconnection of the connecting portion can be successfully prevented. Therefore, the manufacturing rate of the semiconductor device can be improved. Furthermore, since the inside of the semiconductor wafer and the portion between the semiconductor wafer and the printed board can be repaired, the semiconductor device can achieve a high holding capacity. On the other hand, by the side of the body wafer on the side of the external electrode The connection part between the external electrodes increases the connection or disconnection of the connection part. Therefore, on the other hand, according to the manufacturing method of the TAB system, a plurality of semiconductor wafers are overlapped and connected, and the electrode pads connected to the substrate via the internal lead frame and the substrate semiconductor electrode are bonded to each other. Furthermore, a part of the conductor device between the existing sheet and the printed board. According to the semiconductor device of the present invention, by making the width of the opening portion in the through hole larger than the width of the opening portion in the semi-conductive opening, the area of the conductor and the component can be made larger, so that the connection resistance is small and the strength is small. Thereby, it is possible to avoid cracking of the connection portion of the semiconductor device with a high yield. A first embodiment of the semiconductor device of the present invention is a wiring lead frame for providing a plurality of wirings, a conductor formed by an appropriate method, and a portion corresponding to an electrode. In detail, the semiconductor device and the system are manufactured in which after the corresponding portions of the internal lead frame of the semiconductor wafer are overlapped, the corresponding portions of the bonding pad and the internal lead frame of the substrate can be repaired inside the semiconductor wafer and the semiconductor wafer. Therefore, half of the high holding capacity can be achieved

Page 24 529135 V. Description of the invention (21) Although the present invention has been shown and described with reference to the examples for illustration, those skilled in the art should understand that the present invention may be subjected to the aforementioned and various other changes, omissions, and additions, Without departing from the spirit and scope of the present invention. Therefore, the present invention should not be limited to the specific embodiments described above, but includes all possible embodiments, and the possible embodiments can be implemented in the scope and equality included in the features set by the scope of the patent application.

Page 529135 Brief description of the drawings [Simplified description of the diagrams] The present invention will be more fully understood from the diagrams of the preferred embodiments of the present invention and the detailed description below, however, the preferred embodiments are not intended to The present invention is limited only for the purpose of illustration and understanding. The diagrams are: FIGS. 1A to 1G show a first embodiment of a method for manufacturing a semiconductor device according to the present invention; FIG. 2 shows a first embodiment of a semiconductor device according to the present invention; FIG. 3 shows a first embodiment according to the present invention An example of a first embodiment of a semiconductor device; FIG. 4 shows another example of a first embodiment of a semiconductor device according to the present invention; FIGS. 5A to 5G show a second embodiment of a method of manufacturing a semiconductor device according to the present invention 6 is a plan view showing a second embodiment of a semiconductor device according to the present invention; FIG. 7 is a plan view showing a manufacturing step of a second embodiment of a method for manufacturing a semiconductor device according to the present invention; FIG. 8 is a plan view showing a semiconductor device according to the present invention FIG. 9A to 9H show an example of a conventional manufacturing method of a semiconductor device; and FIGS. 10A to 10H show another example of a conventional manufacturing method of a semiconductor device An example °

Page 26 529135 Brief description of drawings [Description of symbols] 1 to semiconductor wafer 10 to electrode bonding pads / wafer electrodes 11 to through holes 1 2 to substrate 13 to adhesive 1 4 to wiring 1 5 to Cu layer 1 6 to resin 1 7 ~ solder resist film 18 ~ plated layer 1 9 ~ solder bump 11 0 ~ motherboard / printing board 111 ~ resist film 11 2 ~ opening 2 1 2 ~ opening 2 1 3 ~ protective layer 3 1 3 ~ protection Layer 31 ~ through hole 6 1 ~ cutting surface 6 2 ~ cutting surface 71 ~ through hole 72 ~ substrate 7 3 ~ adhesive

Page 27 529135 Brief description of drawings 74 741 75 76 77 78 79 710 714 81 82 83 84 841 85 88 89 810 Wiring conductor plating material bonding tool solder ball resist film mineral solder bump printed board reinforced resin through hole substrate Resin wiring copper pig sealing material plated solder bump printed board

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Claims (1)

529135 _Case No. 88121525_Year Month Date__ VI. Patent Application Range 5. For the semiconductor device under patent application item 4, the thickness of the substrate is in the range of 50 to 35 0. 6. The semiconductor device according to item 4 of the patent application, wherein a plurality of semiconductor wafers are held on one side of the substrate, and a resin is filled between the semiconductor wafers. 7. For the semiconductor device according to item 4 of the patent application, wherein, on the side opposite to the semiconductor wafer, there is an outer boundary electrode connected to the conductor in the through hole on the substrate, and this outer electrode is bonded to the printed board, and the peeling The removal strength is in the range of 14 to 18 kgf / cm. Page 30