TW518638B - Device and process for liquid treatment of wafer-shaped articles - Google Patents

Device and process for liquid treatment of wafer-shaped articles Download PDF

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Publication number
TW518638B
TW518638B TW089107599A TW89107599A TW518638B TW 518638 B TW518638 B TW 518638B TW 089107599 A TW089107599 A TW 089107599A TW 89107599 A TW89107599 A TW 89107599A TW 518638 B TW518638 B TW 518638B
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Taiwan
Prior art keywords
wafer
gas
patent application
item
edge
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TW089107599A
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Chinese (zh)
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Kurt Langen
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Sez Semiconduct Equip Zubehoer
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photographic Processing Devices Using Wet Methods (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a process for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article. Furthermore the invention relates to a device for executing this process.

Description

518638518638

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

本發明係有關於一種晶圓狀物品的限定部份，尤其是 晶圓的靠近邊緣部份之液體處理的裝置及方法。 處理一晶圓狀物品，尤其是一晶圓靠近邊緣的限定部 伤之理由’將說明如後。 一晶圓，例如一矽晶圓，乃會具有例如二氧化矽塗層 於各面。為了後續的製程（假使有一層金或一層聚石夕（複晶 矽）要被覆設其上），其將需要由該晶圓主表面的至少邊緣 區域除掉既有的塗層，但亦可選擇在其邊緣表面及/或第 二主表面的區域來除去塗層。此係藉蝕刻方法來完成，其 主要可區分為乾蝕刻法及溼蝕刻法。 另種狀況即為晶圓的清潔。其乃需要清潔至少晶圓的 主表面之邊緣區域，但亦可選擇在其邊緣表面及/或第二 主表面區域，來除去微粒及/或其它污染物。此係以溼清 >糸法來完成。 本發明係針對溼蝕刻法及溼清潔法（統稱為液體處理） 。當進行該等操作時，要處理的晶圓表面區域會被以處理 液溼化，而要被除去的膜層或污物等將被除掉。 一種供執行此液體處理的裝置係揭述於例如第4 903 717號美國專利案中。在該專利中，該晶圓狀物品（晶圓） 係被固設在一轉盤上。該處理液，例如一蝕刻液，會被施 加於要被處理的晶圓表面上，由於晶圓旋轉的結果，該液 體會佈散於其整個表面，並被側向地拋用至該晶圓的邊緣 上。 為了防止該處理液被以一不能控制的方式濺灑到不铲The present invention relates to a device and method for processing liquid in a defined portion of a wafer-like article, particularly a portion near the edge of a wafer. The reason for processing a wafer-shaped article, especially a wafer near the edge of a limited portion, will be described later. A wafer, such as a silicon wafer, has a silicon dioxide coating on each side. For subsequent processes (if there is a layer of gold or a layer of polysilicon (polycrystalline silicon) to be overlaid on it), it will need to remove the existing coating from at least the edge area of the main surface of the wafer, but it can also be Select the area on its edge surface and / or the second major surface to remove the coating. This is accomplished by an etching method, which can be mainly divided into a dry etching method and a wet etching method. Another situation is wafer cleaning. It is necessary to clean at least the edge area of the main surface of the wafer, but it is also possible to select at its edge surface and / or the second main surface area to remove particles and / or other contaminants. This is done by the wet cleaning method. The present invention is directed to a wet etching method and a wet cleaning method (collectively referred to as a liquid treatment). When such operations are performed, the surface area of the wafer to be processed is wetted with the processing solution, and the film layer or dirt to be removed is removed. An apparatus for performing this liquid treatment is disclosed, for example, in U.S. Patent No. 4,903,717. In this patent, the wafer-like object (wafer) is fixed on a turntable. The processing solution, such as an etching solution, will be applied to the surface of the wafer to be processed. As a result of the wafer rotation, the liquid will spread over the entire surface and be thrown sideways to the wafer. On the edge. To prevent the treatment liquid from being spilled onto the non-shovel in an uncontrollable manner

本紙張尺度適财國^準（CNS)A4規格⑽χ撕公爱）The size of this paper is suitable for wealthy countries ^ quasi (CNS) A4 size ⑽χ tear public love)

518638518638

五、發明說明（2 受處理的表面，在第4 903 717號美國專利案中，乃推薦 -種夾盤’其會以-種氣體冲噴面對該夾盤的表面，即該 不要受處理的表面。如此進行時，該氣體會存在於晶圓邊 緣與夾盤之間。 第09-181026A號日本專利案乃揭述一種半導體晶圓 的夾盤，其在一環狀噴嘴的外部具有一特殊造型，例如一 下凹至該外部的環狀階部，或其邊緣之_斜削部。此外， 一吸孔亦被提供。該吸入開孔的造型係被設計成會影響（ 減少）在邊緣區域的流速。此乃用來使由上頭淋下的處理 液，能流過該晶圓的邊緣而至面對夾盤的一面，以處理該 等邊緣區域。 不管是否係使用如第4 903 717號美國專利案，或第 09-181026A號曰本專利案所請求之裝置（夾盤）來固持該晶 圓狀物品，大部份在面向夾盤的主表面上之15mm的邊緣 區域（由該晶圓的外側邊緣算起）皆可被處理。然後該液體 會沿該晶圓邊緣的方向流回，並被該裝置所甩掉。 本务明之目的係為驗證一種可能性，來以液體處理在 一晶圓狀物品的一表面上之一限定的側邊區域，且亦可能 處理大於2mm的邊緣區域（由該晶圓的外側邊緣算起）者。 爰是，本發明於其概括實施例中，乃提供一種裝置可 供液體處理一晶圓狀物品，尤其是一晶圓在靠近邊緣之一 限定部份’其係以一裝置來固持該晶圓狀物品，並以一氣 體饋供裝置來對該晶圓狀物品面向該裝置的表面進行至少 部份的氣體噴冲，其中在周緣邊側設有一氣體導引裝 本紙張尺度賴目家標準（CNS)A4規格（210 X 297公爱） 1111 t i I (請先閱讀背面之注意事項再填寫本頁) 訂： -線· 經濟部智慧財產局員工消費合作社印製 518638 A7 R7V. Description of the invention (2 The treated surface, in US Patent No. 4 903 717, is recommended-a kind of chuck, which will spray the surface of the chuck with a gas, that is, it should not be treated When this is done, the gas will exist between the edge of the wafer and the chuck. Japanese Patent No. 09-181026A discloses a chuck of a semiconductor wafer, which has a Special shapes, such as the ring-shaped stepped portion recessed to the outside, or the chamfered portion of its edge. In addition, a suction hole is also provided. The shape of the suction opening is designed to affect (reduce) the edge The flow rate of the area. This is used to allow the processing liquid dripped from the head to flow through the edge of the wafer to the side facing the chuck to handle such edge areas. Regardless of whether it is used as in Section 4 903 U.S. Patent No. 717, or No. 09-181026A, the device (chuck) requested by this patent case to hold the wafer-like article, most of the 15 mm edge area (mainly by the main surface facing the chuck) From the outside edge of the wafer) can be processed. Then The liquid will flow back in the direction of the edge of the wafer and will be thrown away by the device. The purpose of this task is to verify a possibility to treat a defined one of the surfaces of a wafer-like object with liquid Side area, and it is also possible to deal with edge area larger than 2mm (counting from the outer edge of the wafer). That is, the present invention, in its generalized embodiment, provides a device for liquid processing of a wafer shape. Articles, especially a defined portion of a wafer near an edge ', is a device that holds the wafer-like article, and a gas-feeding device to at least the surface of the wafer-like article facing the device Part of the gas jet, in which a gas guide is installed on the periphery of the paper. The paper size is CNS A4 (210 X 297). 1111 ti I (Please read the precautions on the back before filling (This page) Order:-Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 518638 A7 R7

五、發明說明（3 ) °將大。卩伤在戎晶圓狀物品邊緣區域之噴冲氣體導離該物 經濟部智慧財產局員工消費合作社印製 δ亥固持裝置（夾盤）係為此目的而用來固持該晶圓。該 固持係可利用一真空或使晶圓懸浮在一氣墊上來完成，並 可藉側邊的導件來防止側向滑脫。 該晶圓亦可被氣體所固持，其會流過晶圓底部而造成 負壓（亦稱為柏努力作用），藉此該晶圓會朝夾盤的方向承 又一力。該晶圓會被該夾盤之一高凸部份觸抵而納持於該 氣體饋供裝置中，藉此該晶圓會被阻止側向滑脫。 經由氣體饋送管線，該氣體可被導至晶圓狀物品（晶 圓）的底面（面向夾盤的表面），故能阻止液體達到該底面 而進行非所要的處理。用於此目的之氣體應要對其所冲流 的表面不會起反應，例如，氮或極純的空氣乃可適用。 5亥氣體饋供裝置可包含一個或多個喷嘴，或一環狀喷 嘴。該等噴嘴應對該夾盤中心呈對稱地設置，俾可在整個 周緣得到均勻的氣體流。 5玄氣體導引裝置係用來導送氣體，而使該氣體能由夾 盤的中央部份朝該晶圓邊緣的方向流動離開該邊緣區域。 流經該氣體導引裝置側邊的氣體會面向該晶圓狀物品而離 開。該邊緣區域愈大’則該氣體導引裝置會被設在愈遠的 内側（朝向卡盤中心）。 由於在該晶圓靠近邊緣的底面部份，基本上氣體並不 會流至此外側部份，故在以液體處理時，該液體會繞過晶 圓邊緣而流至底部，因此可濕化該晶圓底部靠近邊緣的部 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 6 (請先閱讀背面之注意事項再填寫本頁) -ώ------- —訂--- _1 I ϋ.I n 1· ϋ I 1 i_i I mfj ϋ ϋ I ·ϋ I ϋ ϋ I ϋ 1 1 I ϋ Α7Fifth, the description of the invention (3) ° will be large. The jetting gas that hurts the edge area of the wafer-shaped article is directed away from the object. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The holding system can be completed by using a vacuum or by suspending the wafer on an air cushion, and the side guide can be used to prevent lateral slippage. The wafer can also be held by a gas, which will flow through the bottom of the wafer and cause a negative pressure (also known as cypress force), whereby the wafer will bear another force in the direction of the chuck. The wafer is abutted by a high convex portion of the chuck and is held in the gas feeding device, whereby the wafer is prevented from slipping sideways. Through the gas feed line, the gas can be guided to the bottom surface (surface facing the chuck) of the wafer-like object (crystal circle), so that the liquid can be prevented from reaching the bottom surface for undesired processing. The gas used for this purpose should not react on the surface on which it is flowing. For example, nitrogen or very pure air are suitable. The Haihai gas feeding device may include one or more nozzles, or a ring-shaped nozzle. The nozzles should be arranged symmetrically to the center of the chuck to obtain a uniform gas flow over the entire periphery. The five-element gas guiding device is used to guide the gas so that the gas can flow away from the edge region from the central portion of the chuck toward the edge of the wafer. The gas flowing through the side of the gas guide device faces away from the wafer-like article. The larger the edge area 'is, the farther the gas guiding device is disposed inside (toward the chuck center). Since the bottom portion of the wafer near the edge basically does not flow to this outer portion, when the liquid is processed, the liquid will bypass the edge of the wafer and flow to the bottom, so the crystal can be wetted. The size of the paper near the edge of the round bottom is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 6 (Please read the precautions on the back before filling this page) --- _1 I ϋ.I n 1 · ϋ I 1 i_i I mfj ϋ ϋ I · ϋ I ϋ ϋ I ϋ 1 1 I ϋ Α7

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

本㈣優於習知技術之處係在於，該靠近邊緣部份的 j乃％藉著適當選擇氣體導引裝置，而可為任何所需 的尺寸。 、广、&該氣體導引裝置與晶圓之間隙中的氣體流，可藉 適田地成型該氧體導道，而在該間隙中造成-負壓，藉該 負壓加諸於該邊緣區域’氣體會由晶圓邊緣附近流向内部 。因此’當在液體處理時，該液體會被吸人邊緣區域。 _在-實施例中，該氣體導引裝置乃呈環狀。使用例如 三個或更多的間隔物，該環可被固裝於夾盤的座體上。但 亦可利用銑削加工來製造成該座體。 在一貝施例中該環具有一内徑，乃小於該晶圓狀物品 的外徑；及-外徑至少與該晶圓狀物品的外徑相等。 利用此方式，流過該晶圓狀物品圓周邊緣（繞過晶圓 邊緣）的液體，乃能被該環所承接而被送至内側。 該氣體導引裝置亦可由一環狀溝槽所形成，該溝槽係 與該裝置的周邊同圓心，並可將氣體排放至所述的外側。 糟著在該卡盤座體中由該溝槽的底部導向該外側的簡單小 孔，即可確保完成該操作。 在另一實施例中，該氣體導引裝置於其内周緣具有一 銳緣（邊緣角度小於60。）。藉此方式幾乎所有在邊緣區域 的氣體皆可被導離該晶圓。 在一貫施例中，該裝置位於該氣體饋供裝置與氣體導 引裝置之間的部份（座體），係位於比該氣體導引裝置對該 7 --------------裝--------訂---------線 ί請先閱讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 518638 A7 B7 五、發明說明（5) (請先閱讀背面之注意事項再填寫本頁) 晶圓狀物品（晶圓）更遠距離之處。於此方式中，可有比流 經5玄晶圓與氣體導引裝置之間更多的氣體，流經該晶圓與 該部份（座體）之間。因此大部份在該氣體導引裝置側邊而 面向該晶圓離開的氣體，皆會流過此裝置。 最好是該氣體導引裝置係被設成，若有一晶圓狀物品 (晶圓）在該夾盤上，則該氣體導引裝置不會接觸該晶圓狀 物品（晶圓），而有一間隙會保持於該晶圓與環之間。 在一實施例中，該氣體導引裝置與晶圓狀物品的間隙 係為0.05至lmm，最好為〇1至〇 5mm。於此方式中，在晶 圓與氣體導引裝.置之間會形成一種毛細現象，藉此乃可使 繞流過晶圓邊緣的液體會被抽吸。面對該氣體導引裝置之 表面，即被該液體所濕化的表面之内徑，係小於該氣體導 引裝置之環狀表面的内徑。 假使该氣體導引裝置面向該晶圓狀物品的表面平行於 該晶圓狀物品之主表面，則乃是較佳的。在該晶圓狀物品 (晶圓）與氣體導引裝置之間的間隙，因而能在整個邊緣區 域中皆為相同的大小。 經濟部智慧財產局員工消費合作社印製 有一實施例係需要該夾盤能被帶動旋轉。即使其並非 必要，但仍是較佳的，因為該等處理液乃可由該夾盤及晶 圓的邊緣被甩掉。若在液體處理時該夾盤並不轉動，則液 體會被氣體流所帶走或吹掉。 本發明的另一部份係為一種方法，乃可液體處理一晶 圓狀物品之一限定區域，尤其是一晶圓靠近邊緣的部份。 在此方法中，該液體係被施淋於面對該液體來源的第一表This method is superior to the conventional technique in that the j near the edge portion can be any desired size by properly selecting the gas guiding device. The gas flow in the gap between the gas guiding device and the wafer can be formed by the oxygen field channel in a suitable field, and a negative pressure is created in the gap, and the negative pressure is applied to the edge. Area 'gas will flow from near the edge of the wafer to the inside. So 'when the liquid is processed, the liquid will be sucked into the edge area. _ In the embodiment, the gas guiding device is annular. The ring can be fixed to the seat of the chuck using, for example, three or more spacers. But it can also be manufactured by milling. In one embodiment, the ring has an inner diameter that is smaller than the outer diameter of the wafer-like article; and-the outer diameter is at least equal to the outer diameter of the wafer-like article. In this way, the liquid flowing through the peripheral edge of the wafer-like article (around the edge of the wafer) can be carried by the ring and sent to the inside. The gas guiding device can also be formed by an annular groove, which is concentric with the periphery of the device and can discharge gas to the outside. In addition, a simple small hole in the chuck body guided from the bottom of the groove to the outer side can ensure the completion of the operation. In another embodiment, the gas guiding device has a sharp edge on its inner periphery (the edge angle is less than 60 °). In this way, almost all gases in the edge area can be directed away from the wafer. In a consistent embodiment, the device is located between the gas feeding device and the gas guiding device (the base), and is located in a position that is more than the gas guiding device to the 7 ---------- ---- Install -------- Order --------- Line ί Please read the precautions on the back before filling in this page} This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) 518638 A7 B7 5. Description of the invention (5) (Please read the precautions on the back before filling out this page) Wafer-like articles (wafers) are farther away. In this way, there can be more gas flowing between the wafer and the part (the base) than between the 5xuan wafer and the gas guide. Therefore, most of the gas leaving the side of the gas guide device facing the wafer will flow through the device. Preferably, the gas guiding device is configured such that if a wafer-like article (wafer) is on the chuck, the gas guiding device does not contact the wafer-like article (wafer), and there is a The gap will remain between the wafer and the ring. In one embodiment, the gap between the gas guiding device and the wafer-like article is 0.05 to 1 mm, and preferably 0. 1 to 0.5 mm. In this method, a capillary phenomenon is formed between the wafer and the gas guide device, so that the liquid flowing around the edge of the wafer can be sucked. The inner diameter of the surface facing the gas guiding device, that is, the surface wetted by the liquid, is smaller than the inner diameter of the annular surface of the gas guiding device. It is preferable if the surface of the gas guiding device facing the wafer-shaped article is parallel to the main surface of the wafer-shaped article. The gap between the wafer-like article (wafer) and the gas guiding device can be the same size throughout the edge region. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. One embodiment requires that the chuck be driven to rotate. Even if it is not necessary, it is still preferable because the treatment liquid can be thrown away by the chuck and the edge of the wafer. If the chuck does not rotate during liquid handling, the liquid will be carried away or blown away by the gas stream. Another aspect of the present invention is a method for liquid-treating a limited area of a wafer-shaped object, especially a portion of a wafer near an edge. In this method, the liquid system is applied to a first surface facing the source of the liquid.

518638 經濟部智慧財產局J工消費合作社印製 A7 ^^^—__Β7___ —_ 五、發明說明（6 ) 面。基本上該液體會徑向地流至該晶圓狀物品之圓周邊緣 (晶圓邊緣）的外侧，並繞過該邊緣而至背向於液體來源的 第二表面。該液體會溼化該第二表面上靠近邊緣之一限定 部份，並由該晶圓狀物品上被排除。 其超過習知技術的優點係，在此方法中達到該第一表 面靠近邊緣部份的液流，亦會以一預定方向（由該邊緣（晶 圓邊緣）朝晶圓中央的方向）流經該第二表面上，且不須再 流回至該邊緣。因此液體會由靠近邊緣部份的内部邊緣處 被排除。此乃可例如使用本發明所請求的裝置來造成。 在該方法之一實施例中，該邊緣區域係被選為大於 2mm 〇 在該方法之另一實施例中，該晶圓狀物品於液體處理 時會繞其軸心旋轉，藉此該等處理液體將可被由該晶圓狀 物品或晶圓的邊緣甩除。 最好該旋轉速度係至少為l〇〇/min，俾可有效地甩除 液體。 本务明之其它的細節、特徵與優點等，將由圖式所示 之本發明的實施例來說明於下。 圖式之簡單說明： 第1圖乃不意地不出一設有一晶圓之該裝置（夾盤丨）的 轴向截面。 第2與3圖乃示意地示出該夾盤邊緣區域的軸向截面。 且第3圖更示出在處理時液體的作動方向。 該失盤1主要含有三個部份（2, 3, 4)，即座體3、蓋2 本紙張尺度綱帽國家標準（CNS)A4規格（210 χ_297公爱） 9 Μ--------^---------^ (請先閱讀背面之注意事項再填寫本頁) 518638 消 A7 B7 五、發明說明（7 ) 氣體導引裝置4。該座體3係呈環狀並連接於一中空軸（未 示出），該軸一方面可使該夾盤旋轉（如箭號尺所示），且另 一方面能以氣體G供應該氣體饋供裝置（5, 6)。 該蓋2係被嵌入座體中並與之連結（未示出），而使該 蓋2與座體3之間形成-環狀氣體通道5，丨頂端（面向晶圓z 的一側）會排入一環狀隙縫，即該環狀噴嘴6中。該環狀噴 嘴ό的直徑係小於該氣體導引裝置4的内徑。 、 該夾盤係依據“柏努力原理，，來運作。在該環狀噴嘴6 的外侧（即區域7中）乃形成—氣墊，其上則懸浮著該晶圓 。该晶圓係藉固設在周緣上的導件（銷桿25)等來避免滑掉 ，而在該夾盤繞該軸心Α旋轉時’該晶圓會被它們所夾帶 。該等梢桿可被移動貼抵於該晶圓邊緣（類似於第4 9〇3 717號美國專利案）。 忒氣體導引裝置4係呈環狀，而利用多個間隔物2 1固 裨在該座體3的頂部（面向晶圓的一面），該等間隔物以乃 規則地佈設在周緣上。該環4具有一内徑小於晶圓w的外 徑，及一外徑大於晶圓W的外徑。 該氣體導引裝置面向晶圓W的表面14係為平直的環狀 表面，而平行於該晶圓的主表面。在該平面14與晶圓面向 夾盤的表面之間，當該晶圓放在該夾盤上時，會形成一環 狀間隙10。4間隙的深度C(見第3圖)乃對應於晶圓W的外 半徑與該氣體導引裝置4的时徑之差。其寬^(見第 係由。亥表面14至面向5亥夾盤的晶圓表面之間的距離所形成 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公髮）518638 Printed by J Industrial Consumer Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs A7 ^^^ —__ Β7 ___ —_ V. Description of Invention (6). Basically, the liquid flows radially to the outside of the peripheral edge (wafer edge) of the wafer-like article, and bypasses the edge to a second surface facing away from the liquid source. The liquid wets a defined portion of the second surface near the edge and is removed from the wafer-like article. Its advantage over the conventional technology is that in this method, the liquid flow that reaches the edge portion of the first surface will also flow in a predetermined direction (from the edge (wafer edge) toward the center of the wafer). The second surface does not need to flow back to the edge. Therefore, the liquid is discharged from the inner edge near the edge portion. This can be caused, for example, using the device requested by the present invention. In one embodiment of the method, the edge region is selected to be larger than 2 mm. In another embodiment of the method, the wafer-like article is rotated about its axis during liquid processing, thereby the processing Liquid will be removed from the wafer-like object or the edge of the wafer. Preferably, the rotation speed is at least 100 / min, so that the liquid can be effectively removed. Other details, features, and advantages of the present invention will be described below by embodiments of the present invention shown in the drawings. Brief description of the drawings: Figure 1 shows the axial cross-section of the device (chucks) provided with a wafer by accident. Figures 2 and 3 schematically show the axial cross section of the chuck edge region. In addition, Fig. 3 shows the direction of action of the liquid during processing. The missing disk 1 mainly contains three parts (2, 3, 4), namely, the base 3, the cover 2 national standard (CNS) A4 specification of the paper scale outline cap (210 χ_297 public love) 9 Μ ------ -^ --------- ^ (Please read the precautions on the back before filling this page) 518638 Consumer A7 B7 V. Description of the invention (7) Gas guide device 4. The base 3 is ring-shaped and connected to a hollow shaft (not shown). The shaft can rotate the chuck (as shown by the arrow ruler) on the one hand, and can supply the gas with gas G on the other hand. Feeding device (5, 6). The cover 2 is embedded in the base and connected to it (not shown), so that a ring-shaped gas channel 5 is formed between the cover 2 and the base 3, and the top end (the side facing the wafer z) will be It is discharged into an annular slit, namely the annular nozzle 6. The diameter of the annular nozzle is smaller than the inner diameter of the gas guiding device 4. The chuck is operated according to the principle of "Bai effort." On the outer side of the annular nozzle 6 (that is, in the area 7), an air cushion is formed, on which the wafer is suspended. The wafer is fixed by Guides (pins 25) on the periphery to avoid slipping off, and when the chuck rotates around the axis A, 'the wafer will be entrained by them. The pins can be moved against the crystal Round edge (similar to U.S. Patent No. 4,903,717). The gas guide device 4 is ring-shaped, and a plurality of spacers 21 are fixed on the top of the base 3 (facing the wafer). One side), the spacers are regularly arranged on the periphery. The ring 4 has an inner diameter smaller than the outer diameter of the wafer w, and an outer diameter larger than the outer diameter of the wafer W. The gas guide device faces the crystal The surface 14 of the circle W is a straight annular surface and is parallel to the main surface of the wafer. Between the plane 14 and the surface of the wafer facing the chuck, when the wafer is placed on the chuck An annular gap 10 will be formed. The depth C of the gap 4 (see FIG. 3) corresponds to the outer radius of the wafer W and the time diameter of the gas guiding device 4. . ^ Its width (see the first line. Hai facing surface 14 to the distance between the chuck 5 Hai wafer surface suitable for the present paper China National Standard Scale (CNS) A4 size is formed (male hair 21〇 X 297)

518638518638

經濟部智慧財產局J工消費合作社印製 五、發明說明（8 ) 在該氣體導引裝置4與座體3之間乃形成一環狀的氣體 沒放通道8，氣體會被該氣體導引裝置4排入其中。該間隙 10的總截面積係遠小於該氣體洩放通道8的總截面積，因 此該通道乃可排放大部份的氣體。 在該晶圓W與座體3之間，或該環狀噴嘴6與氣體導引 裝置4之間的區域7，該氣體會直接沿著面向夾盤的晶圓表 面流動。此區域中截面最窄的部份係位於該表面13(座體3 面對晶圓的表面）與該晶圓之間，而在第2圖中係以b示出 。該座體3至晶圓的距離b，係大於該氣體導引裝置至該晶 圓的距離a。該蓋2面向晶圓的表面12,係大致位於與該座 體的表面13相同之平面上。 若該晶圓被置於夾盤上，其會被區域7中的氣墊所懸 持，而既不接觸該蓋2亦不接觸氣體導引裝置4。由環狀喷 嘴6逸出的氣體（氣流G1)會經由該氣體洩放通道8(氣體G2) 排出。有一小量的氣體可經由間隙1〇逸出，但該氣體G2 將會產生一負壓，因此在附近的氣體會被由該間隙1〇吸入 ，而被該氣流G2所帶走。 在液體處理時，該液體會被施淋於背向夾盤1的表面 ’嗣該液體會朝晶圓邊緣的方向（液流F)流動，並繞過該 晶圓邊緣E。當該晶圓旋轉時，一些液體可被直接由晶圓 邊緣（未示出）甩掉。然後該液流會分成二支流F1與F2。而 液流F1會由該晶圓流掉。 該液流F2會流入間隙10中，並濕化該晶圓底部。F2 會濕化該底面的邊緣區域，而比該氣體導引裝置更要向内 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 11 --I--— II-----裝 —11 訂------II ·線 (請先閱讀背面之注意事項再填寫本頁) 518638 A7 B7 五、發明說明（9 ) 延伸稍遠一些。因此該濕化區域d會比該間隙的深度c稍微 較大一些。於此該液流F2會被圍繞著氣體導引裝置内緣 的氣流G2所轉向，而使該液流F2與氣流G2經由氣體、;戈放 通道一起離開該夾盤， 0 元件標號對照 1 ···夾盤 8…氣體洩放通道 2…蓋 10…間隙 3…座體 12…蓋之表面 4···氣體導引裝置（環） 13…座體表面 5···環狀氣體通道 14…環狀表面 6···環狀喷嘴 21 ···間隔物 7···氣塾區域 25···導件（銷桿） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 '^--------t___________________ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 12Printed by the J Industrial Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (8) A ring-shaped gas discharge channel 8 is formed between the gas guiding device 4 and the base 3, and the gas will be guided by the gas Device 4 is discharged into it. The total cross-sectional area of the gap 10 is much smaller than the total cross-sectional area of the gas discharge passage 8, so the passage can discharge most of the gas. In the region 7 between the wafer W and the base 3, or between the annular nozzle 6 and the gas guide 4, the gas flows directly along the wafer surface facing the chuck. The narrowest section in this area is located between the surface 13 (the surface of the base 3 facing the wafer) and the wafer, and is shown as b in the second figure. The distance b from the base 3 to the wafer is greater than the distance a from the gas guiding device to the wafer. The surface 12 of the cover 2 facing the wafer is located substantially on the same plane as the surface 13 of the base. If the wafer is placed on a chuck, it will be suspended by an air cushion in the area 7 without touching the cover 2 or the gas guide 4. The gas (airflow G1) escaping from the annular nozzle 6 is discharged through the gas discharge passage 8 (gas G2). A small amount of gas can escape through the gap 10, but the gas G2 will generate a negative pressure, so the nearby gas will be sucked in by the gap 10 and taken away by the gas flow G2. During liquid processing, the liquid will be applied to the surface facing away from the chuck 1 ′; the liquid will flow in the direction of the wafer edge (fluid F) and bypass the wafer edge E. As the wafer rotates, some liquid can be thrown off directly from the edge of the wafer (not shown). The stream is then split into two substreams F1 and F2. The liquid flow F1 will flow out of the wafer. The liquid flow F2 flows into the gap 10 and wets the bottom of the wafer. F2 will wet the edge area of the bottom surface, and it is more inward than the gas guiding device. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love). 11 --I ---- II-- --- Pack—11 order ------ II · Line (please read the precautions on the back before filling this page) 518638 A7 B7 V. Description of the invention (9) Extend a little farther. Therefore, the humidified area d is slightly larger than the depth c of the gap. Here the liquid flow F2 will be diverted by the air flow G2 around the inner edge of the gas guiding device, so that the liquid flow F2 and the air flow G2 leave the chuck together through the gas channel; 0 component label comparison 1 · ·· Chuck 8 ... Gas release channel 2 ... Cover 10 ... Gap 3 ... Seat body 12 ... Cover surface 4 ... Gas guide (ring) 13 ... Seat body surface 5 ... Annular gas passage 14 … Annular surface 6 ·· annular nozzle 21 ··· spacer 7 ··· air-encrusted area 25 ··· guide (pin) (please read the precautions on the back before filling in this page) Printed by the Bureau's Consumer Cooperatives' ^ -------- t___________________ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 12

Claims (1)

51860«51860 « A8 B8 C8 D8 申請專利範圍 第089107599號專利申請案申請專利範圍修正本 修正日期：90年11月 1· 種可供一晶圓狀物件之一限定部份的液體處理之裝 置’尤其疋一晶圓之靠近邊緣處，其具有一構件以固持 該晶圓狀物件，及一氣體饋供構件以對著面向該構件之 晶圓狀物件的表面至少局部地冲喷氣體，其特徵在於有 氣體導引裝置設在周圍邊緣，而可將在該蟲圓狀物件 邊緣區域中之大部份的噴冲氣體導離該晶圓狀物件。 2·如申請專利範圍第1項之裝置，其中該氣體導引裝置係 具有一環狀的造型。 3·如申請專利範圍第2項之裝置，其中該環具有一内徑小 於該晶圓狀物件的外徑，及一外徑至少相等於該晶圓狀 物件的外徑。 4·如申請專利範圍第1項之裝置，其中該氣體導引裝置 由一環狀溝槽所形成，該溝槽係與該構件的周緣同心 而可由該溝槽將氣體排出外部。 5·如申請專利範圍第1項之裝置，其中該氣體導引裝置 其内周緣上具有一銳緣。 6·如申凊專利範圍第1項之裝置，其中位於該氣體饋供構 件與該氣體導引裝置（座體）之間的部份構件，乃被設成 使其至该晶圓狀物件（晶圓）的距離，大於該氣體導引 置至該晶圓狀物件的距離。 7·如申請專利範圍第6項之裝置，其中該氣體導引裝置 不接觸該晶圓狀物件。 係 在 裝 並 (請先閲讀背面之注意事項再填寫本頁) 13 申請專利範圍 8·如申請專利範，圍第7項之裝置，其中該氣體導引裝置與 曰曰圓狀物件的間距係為〇. 〇 5至1 mm ° 9·如申請專利範圍第8項之裝置，其中該氣體導引裝置與 晶圓狀物件的間距係為〇. 1至0.5 mm ° 10.如申請專利範圍第7項之裝置，其中該氣體導引裝置面 向該晶圓狀物件的表面係平行於該晶圓狀物件的主表 面0 11 ·如申請專利範圍第1項之裝置，具有至少二個導件可界 定該晶圓狀物件在該周緣上的位置，且係垂直於該等構 件。 12·如申請專利範圍第^項之裝置，其中該氣體饋供構件會 形成一氣墊，而使該晶圓狀物件懸浮。 13·如申請專利範圍第1項之裝置，其中在氡體饋供構件内 的部份構件會接觸該晶圓狀物件。 14.如申請專利範圍第13項之裝置，其中在氣體饋供構件内 的部份構件乃提供以一真空。 15·如申請專利範圍第1項之裝置，其中該構件可被驅動旋 轉。 16. —種可供一晶圓狀物件之一限定部份的液體處理之方 法’尤其是一晶圓之靠近邊緣處，其中該液體係施加於 一第一表面，而大致徑向地流向外側至該晶圓狀物件的 周圍邊緣’並繞過該邊緣再至第二表面上，藉由一種毛 細現象可使該液體被抽除，其中該液體會濕化該第二表 面上靠近邊緣的限定部份，並隨即由該晶圓狀物件上被 ^1〇638 A8 B8 C8 D8 申請專利範圍 排除 7·如申切專利範圍第16項之方法，其中該邊緣區域係大於 mm 18·如申凊專利範圍第16項之方法，其中當在液體處理時， 該晶圓狀物件會繞其軸心旋轉。 19·如申印專利範圍第is項之方法，其中該旋轉速度係至少 為100/min (請先閲讀背面之注意事項再填寫本頁} ,、一-T— 本紙張尺度適用中國國家標準（CNS) A4規格（210 X 297公釐） 15 -A8 B8 C8 D8 Patent Application No. 089107599 Patent Application Patent Application Amendment Revised Date: November 1990 1. A device for liquid treatment of a limited portion of a wafer-like object 'especially a crystal Near the edge of the circle, it has a member to hold the wafer-like object, and a gas feed member to spray gas at least partially against the surface of the wafer-like object facing the member. The guiding device is arranged at the peripheral edge, and can direct a large part of the spray gas in the edge region of the round object from the wafer object. 2. The device according to item 1 of the patent application range, wherein the gas guiding device has a ring shape. 3. The device according to item 2 of the patent application range, wherein the ring has an inner diameter smaller than the outer diameter of the wafer-like object, and an outer diameter at least equal to the outer diameter of the wafer-shaped object. 4. The device according to item 1 of the patent application scope, wherein the gas guiding device is formed by an annular groove, which is concentric with the peripheral edge of the member, and the gas can be discharged to the outside through the groove. 5. The device according to item 1 of the patent application range, wherein the gas guiding device has a sharp edge on its inner periphery. 6. The device according to item 1 of the patent application scope, in which a part of the member located between the gas feed member and the gas guide device (the seat body) is set to the wafer-like object ( (Wafer) is greater than the distance that the gas guide is placed to the wafer-like object. 7. The device according to item 6 of the patent application, wherein the gas guiding device does not contact the wafer-like object. Attachment (please read the precautions on the back before filling this page) 13 Scope of patent application 8 · If you apply for a patent, the device around item 7, where the distance between the gas guide device and the round object is 〇5 to 1 mm ° 9 · As in the device of the scope of patent application item 8, wherein the distance between the gas guide device and the wafer-like object is 0.1 to 0.5 mm ° 10. The device according to item 7, wherein the surface of the gas guiding device facing the wafer-like object is parallel to the main surface of the wafer-like object. 0 11 · If the device according to item 1 of the patent application has at least two guide members, The position of the wafer-like object on the periphery is defined and is perpendicular to the components. 12. The device according to item ^ of the patent application scope, wherein the gas feeding member forms an air cushion, so that the wafer-like object is suspended. 13. The device according to item 1 of the scope of patent application, wherein a part of the components in the carcass feed member will contact the wafer-like object. 14. The device according to item 13 of the patent application, wherein a part of the components in the gas feed component is provided with a vacuum. 15. The device according to item 1 of the patent application scope, wherein the component can be driven to rotate. 16. —A method for liquid treatment of a limited portion of a wafer-like object ', especially near a rim of a wafer, wherein the liquid system is applied to a first surface and flows approximately radially outward To the peripheral edge of the wafer-like object and bypassing the edge to the second surface, the liquid can be removed by a capillary phenomenon, wherein the liquid will wet the definition of the edge near the edge on the second surface Part, and then was excluded from the wafer object ^ 1〇638 A8 B8 C8 D8 Patent Application Exclusion 7. The method of item 16 of the scope of patent application, where the edge area is greater than mm 18 The method of item 16 of the patent, wherein the wafer-like object rotates about its axis during liquid processing. 19 · If the method of applying for item is printed in the scope of patent application, where the rotation speed is at least 100 / min (please read the precautions on the back before filling this page}, one-T— This paper size applies Chinese national standards ( CNS) A4 size (210 X 297 mm) 15-
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