CN109411402B - Wet cleaning equipment - Google Patents
Wet cleaning equipment Download PDFInfo
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- CN109411402B CN109411402B CN201811159489.1A CN201811159489A CN109411402B CN 109411402 B CN109411402 B CN 109411402B CN 201811159489 A CN201811159489 A CN 201811159489A CN 109411402 B CN109411402 B CN 109411402B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
A wet cleaning apparatus comprising: the surface of the rotating platform is provided with an air outlet; the pins are arranged along the circumference of the upper surface of the rotating table by taking the central shaft of the rotating table as the circle center, the air outlet of the rotating table is arranged at the inner side of the pins, and an increased air flow channel is arranged on an equipment part close to the edge of the wafer; when the airflow passes through the increased airflow channel, the airflow speed is reduced, and meanwhile, the adverse effect of the airflow after the airflow touches the pins is dredged, so that the pollution of the solution flowing down from the pins to the edge of the wafer is reduced, the defect density of the edge of the wafer is reduced, and the product yield is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to wet cleaning equipment.
Background
In integrated circuit fabrication processes, chemicals are often used to clean the wafer and chemically react to remove unwanted materials that may be attached to the surface or backside of the wafer.
When chemical cleaning of the back side of the wafer is required, chemicals are delivered to the back side of the wafer by inverting the wafer. The chuck of the cleaning apparatus typically has a number of pins for holding the wafer. Part of the cleaned chemicals flow downwards from the back of the wafer along the pins, and substances and particles dissolved in the chemicals are transferred to the edge of the wafer contacted with the chemicals, so that the defect density of the front of the wafer is increased, and the yield of products is influenced finally.
Referring to fig. 1, in a wet cleaning schematic diagram, as shown in fig. 1, during a back cleaning process of a wafer 2, the wafer 2 is placed with its front side facing down by a robot, nitrogen enters between the wafer 2 and a turntable 11 through a predetermined gas delivery pipe 4, and the wafer 2 is suspended by a nitrogen gas layer 7. The turntable 11 has six pins 6 around it for fixing the wafer 2. At the start of cleaning, chemicals 10 are sprayed onto the back surface of the wafer 2 to form an acid film 8 on the back surface of the wafer 2, and the turntable 11 rotates the wafer 2. After the cleaning, the rotation table 11 stops rotating, and the wafer 2 is rinsed with deionized water and dried.
When the wafer is transferred from the copper wire to the aluminum wire, the back side of the wafer needs to be chemically cleaned (usually by using a mixed solution of nitric acid and hydrofluoric acid) to remove the residual copper. However, the chemicals carry particles such as copper and flow down the pins. Fig. 3a is a schematic gas flow diagram before the gas is applied to the wafer, and fig. 3b is a schematic gas flow diagram after the gas is applied to the wafer. As shown in fig. 3a and 3b, the gas used in the conventional upper spin table is nitrogen, the nitrogen flows from the middle of the wafer to the edge of the wafer, and after the nitrogen touches the pins, the nitrogen rebounds and diffuses to the periphery, and if a chemical reagent moves downward along the pins, the nitrogen rebounding to flow toward the wafer carries particulate matters in the chemical reagent, so that the edge of the wafer near the pins has relatively high defect density, and therefore, the solution carrying the particulate matters flowing downward along the pins contaminates the edge of the wafer contacting with the pins, which is a main cause of defect density.
In addition, in addition to six pins (the actual pin size is not large), other areas of the wafer edge have defects. FIG. 2 is a schematic view of gas and liquid flows acting on a wafer, as shown in FIG. 2, as the gas flows over the wafer edge, contaminants are transferred from the solution to the wafer as the solution is drawn to the wafer edge.
In the prior art, the influence of cleaning liquid on the edge of a wafer is generally reduced by reducing the cleaning time or changing pins, but the method does not fundamentally solve the problem that the edge of the wafer is easy to cause defect density by a pollutant solution.
Disclosure of Invention
The invention aims to provide wet cleaning equipment to overcome the influence of cleaning liquid on the edge of a wafer and fundamentally solve the problem of high defect density caused by a pollutant solution on the edge of the wafer.
In order to achieve the above object, there is provided a wet cleaning apparatus according to the present invention, comprising:
the rotary table is provided with an air outlet on the surface;
a plurality of pins, a plurality of pins with the center pin of revolving stage is the centre of a circle, follows the upper surface circumference of revolving stage sets up, just the gas outlet of revolving stage set up in the inboard of pin is equipped with the airflow channel who increases on the equipment part near wafer edge.
Optionally, the increased gas flow path comprises a recess disposed on the turntable, the recess being proximate to an edge of the wafer.
Optionally, the recess is an annular groove or a downward annular ramp.
Optionally, the annular groove is a circular arc groove.
Optionally, an included angle between the slope of the annular slope and the horizontal is less than or equal to 45 °.
Optionally, the increased airflow channel comprises at least one through hole disposed at an upper portion of the pin, the through hole being disposed along a radial direction of the pin.
Optionally, the through hole is perpendicular to the axis of the pin, and one end of the through hole surface is a gas inlet and the other end is a gas outlet.
Optionally, the diameter of the gas inlet is less than or equal to two-thirds of the width of the pin.
Optionally, when the through hole is multiple, the multiple through holes are horizontally or vertically arranged side by side.
Optionally, the sum of the diameters of the plurality of air inlets is less than or equal to two thirds of the width of the pin.
Optionally, the diameter of the gas inlet is equal to or greater than the diameter of the gas outlet.
Optionally, the system further comprises a spray head, wherein the spray head is arranged above the rotating table.
Optionally, the gas is ejected through the annular gas outlet to form a gas flow layer between the wafer and the rotary table, so that the wafer is suspended.
Optionally, the gas inlet of the through hole is disposed at a side close to the central axis, and the gas outlet of the through hole is disposed at a side close to the edge of the rotating table.
Optionally, the pins are arranged at equal intervals along the circumference of the surface of the rotating platform with the central axis of the rotating platform as the center of a circle.
Optionally, the air outlet is an annular air outlet with the center of the rotating table as the center of a circle, or a plurality of air outlets distributed annularly with the center of the rotating table as the center of a circle.
Optionally, a gas conveying pipeline connected with the gas outlet is arranged inside the rotating table.
Optionally, the device further comprises a driving mechanism disposed at a lower portion of the rotating table for driving the rotating table to rotate around the central shaft.
The invention has the beneficial effects that:
1. the periphery of the rotating platform is provided with a plurality of pins which are used for supporting and fixing the wafer and preventing the wafer from horizontally shaking under the influence of airflow, gas enters between the rotating platform and the wafer from the gas outlet and flows from the center of the wafer to the peripheral edge of the wafer, during cleaning, chemical medicines are sprayed to the back of the wafer, and an airflow channel is added on equipment close to the edge of the wafer, so that the gas flow speed at the edge of the wafer can be reduced, the pressure difference between the upper side and the lower side of the wafer is improved, the added airflow channel can dredge the adverse effect of the airflow after the airflow touches the pins, the defect density of the edge of the wafer is reduced, the pollution of the solution flowing down from the pins to the edge of the wafer is reduced, and the;
2. the added airflow channel comprises a downward pit arranged on the edge of the surface of the rotating table close to the wafer, and the pit enables the gas to have a larger space when flowing through the edge of the wafer, so that the gas flow speed is reduced, the pressure difference is improved, the defect density of the edge of the wafer is reduced, and the product yield is improved;
3. the added airflow channel comprises at least one through hole which is arranged on the upper part of the pin close to the wafer, when the gas flows to the two sides of the wafer and contacts the pin, a part of gas passes through the through hole, and a part of gas acts on the curved surface of the pin and flows to the two sides, so that the adverse effect of the pin on the airflow is improved, and the pollution of the flowing solution to the edge of the wafer is reduced.
The apparatus of the present invention has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts.
FIG. 1 is a schematic diagram of wet cleaning.
FIG. 2 is a schematic view of gas and liquid flows acting on a wafer.
FIG. 3a is a schematic gas flow diagram before the gas is applied to the wafer.
FIG. 3b is a schematic gas flow diagram after the gas is applied to the wafer.
Fig. 4a is a pin structure diagram of a single via according to an embodiment of the invention.
Fig. 4b is a pin cross-sectional view of a single via according to one embodiment of the invention.
Fig. 5a is a schematic diagram of a pin structure of a dual via according to an embodiment of the invention.
Fig. 5b is a pin cross-sectional view of a dual via according to one embodiment of the invention.
Fig. 6a is a schematic diagram of a pin structure of a truncated cone-shaped through hole according to an embodiment of the present invention.
Fig. 6b is a pin cross-sectional view of a truncated cone via according to an embodiment of the invention.
Figure 7a is a schematic illustration of gas flow before the gas is applied to a wafer, in accordance with one embodiment of the present invention.
Figure 7b is a schematic illustration of the gas flow after the gas is applied to the wafer, in accordance with one embodiment of the present invention.
Fig. 8a is a schematic view of a turntable according to an embodiment of the present invention.
FIG. 8b is a schematic view of another exemplary turntable according to the present invention.
FIG. 9 is a schematic gas flow diagram of a rotary stage according to one embodiment of the present invention.
Description of reference numerals:
1. an annular air outlet; 2. a wafer; 3. recessing; 4. a gas delivery line; 5. a through hole; 6. pin, 7, nitrogen gas layer; 8. acid film, 10, chemicals; 11. a rotating table; 13. an acidic mass flow; 14. mass flow of nitrogen.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
According to an embodiment of the present invention, there is provided a wet cleaning apparatus including:
the surface of the rotating platform is provided with an air outlet; the gas outlet of the rotating platform is arranged on the inner side of the pins, and an increased gas flow channel is arranged on an equipment part close to the edge of the wafer.
In the back cleaning process, place the wafer openly down through the manipulator, the revolving stage has a plurality of pins all around, a plurality of pins are fixed with the wafer and are supported on the revolving stage, the level rocks when preventing that the wafer from receiving the air current effect, gaseous follow the gas outlet and get into the revolving stage after, edge direction flow around to the wafer, during the washing, spout the back of wafer with chemical, the revolving stage drives the wafer and begins to rotate simultaneously, some air current flows through the airflow channel who is close to the increase of wafer edge, the washing is over, the revolving stage stall, rinse the wafer with deionized water, and dry.
When the air current passes through the increased air current channel, the adverse effect of the air current after touching the pin is dredged through slowing down the air flow velocity, so that the pollution of the solution flowing down from the pin to the edge of the wafer is reduced, the defect density of the edge of the wafer is reduced, and the product yield is improved.
Specifically, the rotating platform is made of a high polymer material and can be cast and molded by a mold.
Specifically, the rotary table is made of a metal material and can be formed by machining or die casting.
Specifically, the pins may be made of metal or polymer, and the pins are machined into the shapes and the number of the through holes by a numerically controlled lathe.
Alternatively, the added gas flow path comprises a recess provided on the turntable, the recess being near the edge of the wafer.
The gas flows from the center of the wafer to the peripheral edge of the wafer, when the gas flow passes through the recess, the space is enlarged, the gas flow speed is reduced, when the gas flow speed, the chemical applying speed and the rotating table rotating speed are set to be constant, the gas flow speed is higher, the pressure is lower, the gas flow speed is reduced, namely, the pressure difference is increased, (the pressure difference is the pressure on the gas side minus the pressure on the fluid side), the pollution of the cleaning liquid to the wafer edge is reduced, the defect density of the wafer edge is reduced, and the product yield is improved.
Alternatively, the recess is an annular groove or a downward annular ramp, with the edge of the wafer above the recessed area.
As an alternative, the annular groove is an arc-shaped groove, and the central angle corresponding to the arc is an acute angle.
Specifically, when the airflow passes through the recess, the arc-shaped groove has a certain depth, so that the airflow has a buffering space, and the flow speed of the gas is reduced.
Alternatively, the slope of the annular slope makes an angle of 45 ° or less with the horizontal.
Specifically, the gas flows to the space between the rotary table and the wafer through the pipeline, and the vertical distance between the edge area of the wafer and the rotary table is gradually increased, so that the flow rate of the gas is gradually reduced.
As an alternative, the added air flow channel comprises at least one through hole provided in the upper part of the pin, the through hole being provided in the radial direction of the pin.
Specifically, when the gas flows to the two sides of the wafer and contacts the pins, a part of the gas passes through the through holes, and a part of the gas acts on the curved surfaces of the pins to flow to the two sides, so that the flow direction of the gas is changed, the flow guiding capacity of the pins to the gas flow is improved, and the degree of pollution of the wafer by the flowing solution is reduced.
More preferably, the through-hole is a circular through-hole.
As an alternative, the through hole is arranged perpendicular to the axis of the pin, one end of the through hole is a gas inlet, and the other end of the through hole is a gas outlet.
Specifically, the gas inlet and gas outlet of the through-hole are aligned with the gas flow direction, facilitating a portion of the gas to pass through the through-hole.
As an alternative, the diameter of the gas inlet is smaller than or equal to the width of two-thirds pins, so that the insufficient strength of fixing the wafer by the pins is avoided.
Alternatively, when the through-hole is plural, the plural through-holes are arranged side by side horizontally or vertically.
Specifically, the plurality of through holes arranged side by side may or may not be communicated, and the number of the holes may be changed according to the size of the holes.
As an alternative scheme, the sum of the diameters of the air inlets is less than or equal to the width of two-thirds pins, so that the insufficient strength of the wafer fixed by the pins is avoided.
As an alternative, the diameter of the gas inlet is larger than or equal to that of the gas outlet, so that the flow conductivity of the through hole to gas is improved.
More preferably, the through-hole is in the shape of a circular truncated cone, and the diameter of the gas inlet is larger than that of the gas outlet.
As an alternative, the wafer processing device further comprises a spray head, wherein the spray head is arranged above the rotary table and used for spraying liquid to the wafer.
Alternatively, the gas is ejected through an annular gas outlet to form a gas flow layer between the wafer and the turntable, so that the wafer is suspended.
Alternatively, the gas inlet of the through-hole is disposed at a side close to the central axis, and the gas outlet of the through-hole is disposed at a side close to the edge of the turntable.
Specifically, after the gas touches the wafer, the gas flows to the peripheral edge of the wafer, the gas inlet of the through hole is arranged at one end close to the central shaft, and the gas outlet of the through hole is arranged at one end close to the edge of the wafer, so that the flow guiding capacity of the through hole for the gas can be improved.
As an alternative scheme, the pins are arranged at equal intervals along the circumference of the surface of the rotating platform by taking the central shaft of the rotating platform as the center of a circle.
More preferably, the gas is nitrogen.
As an alternative, the gas outlet is an annular gas outlet taking the center of the rotary table as the center of a circle, or a plurality of gas outlet holes distributed annularly taking the center of the rotary table as the center of a circle, so that gas can uniformly enter between the wafer and the rotary table, a stable air flow layer is formed between the wafer and the rotary table, the wafer is stably suspended on the air flow layer, and the pressure difference of any point on the upper side and the lower side of the wafer is ensured to be consistent.
Specifically, the air outlet is a plurality of circles of annular air outlets arranged at the center of the rotating platform or a plurality of rows of annular air outlets distributed in an annular mode.
As an alternative scheme, a gas conveying pipeline connected with the gas outlet is arranged inside the rotating platform.
Specifically, the gas enters between the wafer and the turntable from the gas outlet through the gas conveying pipeline.
As an alternative, the device further comprises a driving mechanism, wherein the driving mechanism is arranged at the lower part of the rotating platform and is used for driving the rotating platform to rotate around the central shaft.
Specifically, chemicals are sprayed to the back of the wafer, and the rotating table drives the wafer to rotate, so that the chemicals flow from the center of the wafer to the peripheral edge of the wafer, and particulate matter attached to the surface or the back of the wafer is removed conveniently.
Example 1
The embodiment provides a wet cleaning apparatus, including:
the rotary table is provided with an air outlet taking a rotary table central shaft as a circle center on the surface and can rotate around the rotary table central shaft; the six pins are arranged at equal intervals along the circumference of the upper surface of the rotating table by taking the central shaft of the rotating table as the center of a circle, an annular air outlet of the rotating table is arranged on the inner side of the pins, and the plurality of pins are used for supporting the wafer on the rotating table and preventing the wafer from horizontally shaking under the influence of air flow; additional gas flow channels are provided in the equipment components near the edge of the wafer.
The gas outlet is an annular gas outlet which takes the center of the rotating table as the center of a circle, gas is sprayed out through the gas outlet, an airflow layer is formed between the wafer and the rotating table, the wafer is suspended, a gas inlet of the through hole is formed in one side close to the central shaft, and a gas outlet of the through hole is formed in one side close to the edge of the rotating table.
The equipment also comprises a spray head, wherein the spray head is arranged above the rotating table and used for spraying liquid to the wafer. The rotary table further comprises a driving mechanism, wherein the driving mechanism is arranged at the lower part of the rotary table and used for driving the rotary table to rotate around the central shaft.
In the back cleaning process, the wafer is placed with the front side facing downwards through the manipulator, gas enters between the wafer and the rotary table through the gas conveying pipeline from the gas outlet to enable the wafer to be suspended, when cleaning is started, chemical medicines are sprayed to the back side of the wafer through the spray head above the wafer, meanwhile, the rotary table drives the wafer to start rotating, the increased gas flow channel can slow down the gas flow speed at the edge of the wafer, the pressure difference between the upper side and the lower side of the wafer is improved, the increased gas flow channel can dredge the reaction of gas flow after the gas flow contacts pins, the pollution of solution flowing down from the pins to the edge of the wafer is reduced, the defect density of the edge of the wafer is reduced, and the; and after the cleaning is finished, stopping rotating the rotating table, washing the wafer by using deionized water, and drying.
Example 2
Figure 8a is a schematic view of a vertical cross-sectional structure of a rotary table according to an embodiment of the invention, figure 8b is a schematic view of a further rotary table according to an embodiment of the invention, and figure 9 is a schematic view of a gas flow of a rotary table according to an embodiment of the invention.
The embodiment provides a revolving stage for wet process cleaning equipment, the surface of revolving stage is equipped with and uses the revolving stage center pin as annular gas outlet 1 of centre of a circle, and the revolving stage can be rotatory around the revolving stage center pin, and the inside of revolving stage is equipped with the gas delivery pipeline 4 of being connected with annular gas outlet 1, and the airflow channel who increases is including setting up sunken 3 on the revolving stage, and sunken 3 is close to the edge of wafer 2.
As shown in fig. 8a, when the recess 3 is an annular groove, the annular groove is an arc-shaped groove, the central angle corresponding to the arc is an acute angle, the size requirement b is greater than 0.5cm, a is greater than or equal to 0, d is greater than 0, c is greater than 0.5cm, and the edge of the wafer 2 is in the arc-shaped groove area.
As shown in fig. 8b, when the recess is a downward annular slope, the included angle between the slope of the annular slope and the horizontal is less than or equal to 45 °, the edge of the wafer is in the region a, the vertical distance between the edge region of the rotating table and the wafer is gradually increased, and the size requirement b is greater than or equal to 0, and a is greater than 1 cm.
As shown in fig. 9, the edge of the surface of the turntable near the wafer 2 is provided with a downward annular groove, and the gas enters the gap between the wafer and the turntable through the gas delivery pipe 4 and moves towards the four edges of the wafer (as shown by arrows in fig. 9) to form a nitrogen mass flow 14; chemical falls down from the brilliant top, and the flow direction forms acid mass flow 13 to the both sides of wafer, and when the air current was through sunken 3, the space grow, and the gas velocity of flow slows down, reduces the pollution of washing liquid to the wafer edge, has reduced the defect density at wafer edge, has improved the product yield.
Example 3
Fig. 4a is a schematic diagram of a pin structure of a single via according to an embodiment of the present invention, fig. 4b is a schematic diagram of a pin cross-section of a single via according to an embodiment of the present invention, fig. 5a is a schematic diagram of a pin structure of a double via according to an embodiment of the present invention, fig. 5b is a schematic diagram of a pin cross-section of a double via according to an embodiment of the present invention, fig. 6a is a schematic diagram of a pin structure of a truncated cone-shaped via according to an embodiment of the present invention, fig. 6b is a schematic diagram of a pin cross-section of a truncated cone-shaped via according to an embodiment of the present invention, fig. 7a is a schematic diagram of a gas flow before a gas is applied to a wafer according to an embodiment of the present invention, and fig. 7b is a schematic diagram.
The embodiment provides a pin for wet cleaning equipment, and the increased gas flow channel comprises at least one through hole 5 arranged on the upper part of the pin, wherein the through hole 5 is arranged along the radial direction of the pin, the through hole 5 is arranged perpendicular to the axis of the pin, one end of the through hole 5 is a gas inlet, the other end of the through hole 5 is a gas outlet, and the diameter of the gas inlet is smaller than or equal to the width of two-thirds of the pin.
As shown in fig. 4a and 4b, the through-hole 5 is a single through-hole; as shown in fig. 5a and 5b, when there are a plurality of through holes 5, the plurality of through holes 5 are arranged side by side, and the sum of the diameters of the plurality of air inlets is equal to or less than the width of two-thirds of the pins.
As shown in fig. 6a and 6b, the through-hole 5 is of a circular truncated cone shape, and the diameter of the gas inlet is equal to or larger than the diameter of the gas outlet.
As shown in fig. 7a and 7b, when the gas flows to both sides of the wafer 2 and contacts the pins 6, a part of the gas passes through the through holes 5, and a part of the gas acts on the curved surface of the pins 6 and flows to both sides, so that the gas flow direction is changed, the flow guiding capability of the pins 6 to the gas flow is improved, and the degree of the wafer pollution caused by the flowing solution is reduced.
The various features described in the foregoing detailed description may be combined in any suitable manner without contradiction, and various combinations that are possible in the present invention will not be further described in order to avoid unnecessary repetition.
For example, increase the airflow channel on revolving stage and pin simultaneously on this wet cleaning equipment, including setting up sunken and the through-hole on pin upper portion on the revolving stage promptly, sunken on the revolving stage can make the air current when wafer edge, slow down the gas flow rate, and the through-hole on the pin can dredge the air current and touch the reaction behind the pin simultaneously, reduces the pollution of solution that the pin department flowed down to the wafer edge, reduces the defect density at wafer edge, improves the product yield.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (17)
1. A wet cleaning apparatus, comprising:
the rotary table is provided with an air outlet on the surface;
the pins are arranged along the circumference of the upper surface of the rotating table by taking the central shaft of the rotating table as the center of a circle, an air outlet of the rotating table is arranged on the inner side of the pins, and an increased air flow channel is arranged on an equipment part close to the edge of the wafer;
the increased airflow channel comprises at least one through hole arranged at the upper part of the pin, and the through hole is arranged along the radial direction of the pin.
2. The wet cleaning apparatus of claim 1, wherein the added gas flow path comprises a recess disposed on the turntable proximate an edge of the wafer.
3. The wet cleaning apparatus of claim 2, wherein the recess is an annular groove or a downward annular ramp.
4. The wet cleaning apparatus of claim 3, wherein the annular groove is a circular arc groove.
5. The wet cleaning apparatus of claim 3, wherein the slope of the annular ramp is at an angle of 45 ° or less to the horizontal.
6. The wet cleaning equipment according to claim 1, wherein the through hole is arranged perpendicular to the axis of the pin, and one end of the through hole is a gas inlet, and the other end of the through hole is a gas outlet.
7. The wet cleaning apparatus of claim 6, wherein the diameter of the gas inlet is less than or equal to two-thirds the width of the pin.
8. The wet cleaning apparatus as claimed in claim 1, wherein when the through-hole is plural, the plural through-holes are arranged side by side horizontally or vertically.
9. The wet cleaning apparatus of claim 6, wherein the sum of the diameters of the plurality of gas inlets is equal to or less than two-thirds of the width of the pin.
10. The wet cleaning apparatus of claim 6, wherein the diameter of the gas inlet is equal to or greater than the diameter of the gas outlet.
11. The wet cleaning apparatus of claim 1, further comprising a showerhead disposed above the spin table.
12. The wet cleaning apparatus of claim 1, wherein gas is ejected through the gas outlet to form a gas flow layer between the wafer and the turntable to levitate the wafer.
13. The wet cleaning apparatus according to claim 6, wherein the gas inlet of the through hole is disposed at a side near the central axis, and the gas outlet of the through hole is disposed at a side near an edge of the turntable.
14. The wet cleaning apparatus of claim 1, wherein the plurality of pins are disposed at equal intervals along a circumference of the surface of the rotating table with a center axis of the rotating table as a center.
15. The wet cleaning equipment according to claim 1, wherein the air outlet is an annular air outlet with the center of the rotating table as the center, or a plurality of air outlets distributed annularly with the center of the rotating table as the center.
16. The wet cleaning apparatus of claim 15, wherein a gas delivery line connected to the gas outlet is provided inside the rotating table.
17. The wet cleaning apparatus of claim 16, further comprising a driving mechanism disposed at a lower portion of the rotating table for driving the rotating table to rotate about the central shaft.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810897848 | 2018-08-08 | ||
| CN2018108978487 | 2018-08-08 |
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| Publication Number | Publication Date |
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| CN109411402A CN109411402A (en) | 2019-03-01 |
| CN109411402B true CN109411402B (en) | 2021-03-30 |
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| CN201811159489.1A Active CN109411402B (en) | 2018-08-08 | 2018-09-30 | Wet cleaning equipment |
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