CN109411402A - Wet clean equipment - Google Patents
Wet clean equipment Download PDFInfo
- Publication number
- CN109411402A CN109411402A CN201811159489.1A CN201811159489A CN109411402A CN 109411402 A CN109411402 A CN 109411402A CN 201811159489 A CN201811159489 A CN 201811159489A CN 109411402 A CN109411402 A CN 109411402A
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- Prior art keywords
- turntable
- gas
- wet clean
- equipment according
- clean equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
A kind of wet clean equipment, comprising: the surface of turntable, turntable is equipped with gas outlet；Multiple pins, multiple pins are using the central axis of turntable as the center of circle, and the upper surface circumference along turntable is arranged, and the gas outlet of turntable is set to the inside of pin, and increased airflow channel is being equipped on the part of appliance at crystal round fringes；When air-flow passes through increased airflow channel, gas flow rate slows down, while dredging flow encounters the reaction after pin, reduces pollution of the solution flow down at pin to crystal round fringes, reduces the defect concentration of crystal round fringes, improves product yield.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, to a kind of wet clean equipment.
Background technique
In integrated circuit fabrication process, chemicals is often used to cleaning wafer and is removed by chemical reaction some attached
Crystal column surface or the back side unwanted substance.
When needing to carry out chemical cleaning to backside of wafer, by the way that wafer to be inverted, chemicals is transmitted to the back of wafer
Face.The sucker of cleaning equipment usually has several pins, for fixing wafer.Part chemicals after cleaning is carried on the back from wafer
Along pin toward flowing down, the substance and particulate matter that are dissolved in chemicals can be transmitted to the edge of the wafer contacted, cause in face
The raising of wafer frontside defect concentration, the final yield for influencing product.
Fig. 1 wet-cleaning schematic diagram, as shown in Figure 1, during 2 Wafer Backside Cleaning of wafer, by manipulator by wafer 2 just
Placed face down, nitrogen are entered between wafer 2 and turntable 11 by preset gas transfer pipeline 4, and blanket of nitrogen 7 makes wafer 2
It suspends.11 surrounding of turntable tool is there are six pin 6, the fixation for wafer 2.When cleaning starts, chemicals 10 is directed onto crystalline substance
The back side of circle 2 forms acid film 8 at the back side of wafer 2, while turntable 11 drives wafer 2 to start to rotate.Cleaning terminates,
Turntable 11 stops rotating, and rinses wafer 2 with deionized water, and dry.
During wafer goes to aluminum steel from copper wire, the back side of wafer need to be carried out chemical cleaning (usually using nitric acid and
Hydrofluoric acid mixed solution), remove remaining copper.However, chemicals carries the particulate matters such as copper, it can be past dirty along pin.Figure
3a gas is applied to gas flow schematic diagram before wafer, and Fig. 3 b gas is applied to gas flow schematic diagram after wafer.Such as Fig. 3 a and
Shown in Fig. 3 b, the gas that traditionally turntable uses is nitrogen, edge flowing of the nitrogen from the middle part of wafer to wafer, and nitrogen touches
To after pin, nitrogen rebound is spread around, if having chemical reagent to move downward along pin at this time, rebound flows to the nitrogen of wafer
Gas can carry the particulate matter in chemical reagent, and the edge of the wafer close to pin is caused to have relatively high defect concentration, therefore,
Along pin toward the dirty solution that carry particle, it polluted the crystal round fringes contacted, be the master for causing defect concentration
Want reason.
In addition, in addition to six pins (actual pin size is little), other regions of crystal round fringes also have defect.Fig. 2 gas
Body stream and liquid flow act on the schematic diagram on wafer, as shown in Fig. 2, when air-flow flows through crystal round fringes, since solution is stained with
Crystal round fringes, pollutant have been transferred on wafer out of solution.
The prior art be generally by reducing scavenging period or changing pin the influence that reduces cleaning solution to crystal round fringes, but
This method does not solve the problems, such as that the easily contaminated object solution of crystal round fringes causes defect concentration fundamentally.
Summary of the invention
The object of the present invention is to provide a kind of wet clean equipments, to overcome influence of the cleaning solution to crystal round fringes, from root
Solve the problems, such as that crystal round fringes are contaminated object solution and cause high defect concentration in sheet.
To achieve the goals above, a kind of wet clean equipment is proposed according to the present invention, comprising:
The surface of turntable, the turntable is equipped with gas outlet；
Multiple pins, the multiple pin is using the central axis of the turntable as the center of circle, along the upper surface of the turntable
Circumference setting, and the gas outlet of the turntable is set to the inside of the pin, in the part of appliance at crystal round fringes
It is equipped with increased airflow channel.
Optionally, the increased airflow channel includes the recess being set on the turntable, described to recess close to institute
State the edge of wafer.
Optionally, the recess is annular groove or downward annular ramp.
Optionally, the annular groove is circular groove.
Optionally, the gradient of the annular ramp and horizontal angle are less than or equal to 45 °.
Optionally, the increased airflow channel includes at least one through-hole for being set to the pin top, described logical
Hole is arranged along the radial direction of the pin.
Optionally, the axis setting of the vertical pin of the through-hole, one end of the through-hole face is gas feed, another
End is gas vent.
Optionally, the diameter of the gas feed is less than or equal to the width of 2/3rds pins.
Optionally, when the through-hole is multiple, multiple through-holes are horizontal or vertical to be arranged side by side.
Optionally, the sum of diameter of multiple air inlets is less than or equal to the width of 2/3rds pins.
Optionally, the diameter of the gas feed is more than or equal to the diameter of the gas vent.
It optionally, further include spray head, the spray head is set to the top of the turntable.
Optionally, gas is sprayed by the annular air outlet, is formed airflow layer between wafer and the turntable, is made
Wafer suspends.
Optionally, the gas feed of the through-hole is disposed in proximity to the side of the central axis, and the gas of the through-hole goes out
Mouth is disposed in proximity to the side at the edge of the turntable.
Optionally, the multiple pin is using the central axis of the turntable as the center of circle, along the surface perimeter of the turntable
It is equidistantly positioned.
Optionally, the gas outlet is using turntable center as the annular air outlet in the center of circle, or to be with turntable center
Multiple ventholes of center of circle annular spread.
Optionally, the inside of the turntable is equipped with the gas transfer pipeline connecting with the gas outlet.
It optionally, further include driving mechanism, the driving mechanism is set to the lower part of the turntable, described for driving
Turntable is around the center axis rotation.
The beneficial effects of the present invention are:
1, turntable surrounding has multiple pins, and multiple pins are used to support and fix wafer, prevent it by airflow influence
Horizontal jitter, gas enter between turntable and wafer from gas outlet, and from the center of wafer to the edge direction of wafer
Chemicals when cleaning, is sprayed onto the back side of wafer by flowing, in the increased airflow channel in the equipment at crystal round fringes,
The gas flow rate at crystal round fringes can be slowed down, improve the pressure difference of wafer or more two sides, increased airflow channel can be dredged
Air-flow encounters the reaction after pin, reduces the defect concentration of crystal round fringes, reduces the solution flow down at pin to wafer side
The pollution of edge improves product yield；
2, increased airflow channel includes that the surface of turntable is equipped with downward recess close to the edge of wafer, and recess makes
With bigger space when gas flows through crystal round fringes, to reduce gas flow rate, pressure difference is improved, crystal round fringes are reduced
Defect concentration improves product yield；
3, increased airflow channel includes at least one through-hole that pin top is set to close to wafer, when gas flow crystalline substance
Round two sides, after touching pin, a part of gas passes through through-hole, and the curved surface that a part of gas is applied to pin flows to two
Side improves reaction of the pin to air-flow, to reduce pollution of the solution flow down to crystal round fringes.
The device of the invention has other characteristics and advantages, these characteristics and advantages from the attached drawing being incorporated herein and with
It will be apparent in specific embodiment afterwards, or will be in the attached drawing and subsequent specific embodiment being incorporated herein
Middle to be stated in detail, the drawings and the detailed description together serve to explain specific principles of the invention.
Detailed description of the invention
Exemplary embodiment of the present is described in more detail in conjunction with the accompanying drawings, of the invention is above-mentioned and other
Purpose, feature and advantage will be apparent, wherein in exemplary embodiments of the present invention, identical appended drawing reference is usual
Represent same parts.
Fig. 1 wet-cleaning schematic diagram.
Fig. 2 gas stream and liquid flow act on the schematic diagram on wafer.
Fig. 3 a gas is applied to gas flow schematic diagram before wafer.
Fig. 3 b gas is applied to gas flow schematic diagram after wafer.
The mount structure schematic diagram in the single-pass hole according to an embodiment of the invention Fig. 4 a.
The pin cross-sectional view in the single-pass hole according to an embodiment of the invention Fig. 4 b.
The mount structure schematic diagram of Fig. 5 a doubled via according to an embodiment of the invention.
The pin cross-sectional view of Fig. 5 b doubled via according to an embodiment of the invention.
The mount structure schematic diagram of Fig. 6 a circular platform type through-hole according to an embodiment of the invention.
The pin cross-sectional view of Fig. 6 b circular platform type through-hole according to an embodiment of the invention.
Fig. 7 a gas according to an embodiment of the invention is applied to the schematic diagram of gas flowing before wafer.
Fig. 7 b gas according to an embodiment of the invention is applied to the schematic diagram of gas flowing after wafer.
A kind of Fig. 8 a rotary display stand structure schematic diagram according to an embodiment of the invention.
Fig. 8 b another rotary display stand structure schematic diagram according to an embodiment of the invention.
A kind of Fig. 9 gas flow schematic diagram of turntable according to an embodiment of the invention.
Description of symbols:
1, annular air outlet；2, wafer；3, it is recessed；4, gas transfer pipeline；5, through-hole；6, pin, 7, blanket of nitrogen；8, sour
Property film, 10, chemicals；11, turntable；13, acid quality stream；14, nitrogen mass stream.
Specific embodiment
The present invention will be described in more detail below with reference to accompanying drawings.Although showing the preferred embodiment of the present invention in attached drawing,
However, it is to be appreciated that may be realized in various forms the present invention and should not be limited by the embodiments set forth herein.On the contrary, providing
These embodiments are of the invention more thorough and complete in order to make, and can will fully convey the scope of the invention to ability
The technical staff in domain.
According to embodiments of the present invention, a kind of wet clean equipment is provided, comprising:
The surface of turntable, turntable is equipped with gas outlet；Multiple pins, multiple pins are circle with the central axis of turntable
The heart, the upper surface circumference along turntable is arranged, and the gas outlet of turntable is set to the inside of pin, at crystal round fringes
Part of appliance be equipped with increased airflow channel.
Overleaf in cleaning process, wafer frontside to be placed downward by manipulator, turntable surrounding has multiple pins,
Wafer is fixed and is supported on a spinstand by multiple pins, prevents wafer by horizontal jitter when airflow function, and gas is from gas outlet
Into after turntable, the edge direction of Xiang Jingyuan is flowed, and when cleaning, chemicals is sprayed onto the back side of wafer, is revolved simultaneously
Turntable drives wafer to start to rotate, and a part of air-flow passes through the increased airflow channel outflow at crystal round fringes, cleaning knot
Beam, turntable stop rotating, and rinse wafer with deionized water, and dry.
When air-flow passes through increased airflow channel, by mitigation of gases flow velocity, while after dredging flow encounters pin
Reaction reduces pollution of the solution flow down at pin to crystal round fringes, reduces the defect concentration of crystal round fringes, improves product
Yield.
Specifically, turntable is made of high molecular material, can use mold pouring molding.
Specifically, turntable is made of metal material, and can be machined into or die casting and molding.
Specifically, pin can be made of metal material or macromolecule material, and go out the logical of setting by lathe in machining
Hole shape and quantity.
Optionally, increased airflow channel includes the recess being set on turntable, recesses close to the side of wafer
At edge.
Edge direction flowing of the gas from the center of wafer to wafer, when air-flow passes through recess, space becomes larger, gas
Body reduced velocity flow, when setting gas flow rate, chemicals apply one timing of speed and turntable revolving speed, gas flow rate is bigger, pressure
Power is smaller, reduces gas flow rate, is equivalent to and increases pressure difference, and (pressure difference is that the pressure of gas side subtracts fluid side
Pressure), reduce pollution of the cleaning solution to crystal round fringes, reduces the defect concentration of crystal round fringes, improve product yield.
Optionally, it is recessed as annular groove or downward annular ramp, makes the edge of wafer in sunk area
Top.
Optionally, annular groove is circular groove, and the corresponding central angle of circular arc is acute angle.
Specifically, when air-flow passes through recess, circular groove has certain depth, and air-flow is made to have the space of buffering,
The flow velocity of mitigation of gases.
Optionally, the gradient of annular ramp and horizontal angle are less than or equal to 45 °.
Specifically, gas is flowed between turntable and wafer by pipeline, and the fringe region of wafer is vertical with turntable
Distance is gradually increased, and is gradually reduced gas flow rate.
Optionally, increased airflow channel includes at least one through-hole for being set to pin top, and through-hole is along pipe
The radial direction of foot is arranged.
Specifically, when gas flow wafer two sides, after touching pin, a part of gas passes through through-hole, a part of gas
It is applied to the curved surface of pin and flows to both sides, change gas flow, improve pin to the flow conductivity of air-flow, flowed down to reduce
The degree of the solution pollution wafer come.
It is further preferable that through-hole is circular through hole.
Optionally, the axis setting of through-hole vertical pin, one end of through-hole is gas feed, and the other end is gas
Outlet.
Specifically, the gas feed of through-hole and gas vent and air-flow pass through convenient for a part of gas from through-hole to consistent.
Optionally, the diameter of gas feed is less than or equal to the width of 2/3rds pins, avoids pin fixed brilliant
Round intensity is insufficient.
Optionally, when through-hole is multiple, multiple through-holes are horizontal or vertical to be arranged side by side.
Specifically, multiple through-holes arranged side by side can communicate, and can also be not communicated with, the quantity in hole can with the size in hole and
Change.
Optionally, the sum of diameter of multiple air inlets is less than or equal to the width of 2/3rds pins, avoids pin
The intensity of fixed wafer is insufficient.
Optionally, the diameter of gas feed is more than or equal to the diameter of gas vent, improves through-hole and leads to gas
Stream ability.
It is further preferable that through-hole is truncated cone-shaped, the diameter of gas feed is greater than the diameter of gas vent.
It optionally, further include spray head, spray head is set to the top of turntable, is used for wafer spray liquid
Body.
Optionally, gas is sprayed by annular air outlet, is formed airflow layer between wafer and turntable, is made crystalline substance
Circle suspends.
Optionally, the gas feed of through-hole is disposed in proximity to the side of central axis, the gas vent setting of through-hole
In the side at the edge close to turntable.
Specifically, after gas encounters wafer, the edge of Xiang Jingyuan is flowed, during the gas feed of through-hole is disposed in proximity to
The gas vent of one end of mandrel, through-hole is disposed in proximity to one end of crystal round fringes, can be improved through-hole to the water conservancy diversion energy of gas
Power.
Optionally, for multiple pins using the central axis of turntable as the center of circle, the surface perimeter along turntable is equidistant
Setting.
It is further preferable that gas is nitrogen.
Optionally, gas outlet is using turntable center as the annular air outlet in the center of circle, or for turntable center
It for multiple ventholes of center of circle annular spread, allows gas to enough uniformly enter between wafer and turntable, and in wafer and rotation
Stable airflow layer is formed between turntable, wafer is steadily suspended on airflow layer, guarantees the pressure at wafer or more two sides arbitrary point
Power difference is consistent.
Specifically, gas outlet is the multi-ring annular gas outlet being arranged with turntable center or multiple rows of outlet that distribution circularizes
Hole.
Optionally, the inside of turntable is equipped with the gas transfer pipeline connecting with gas outlet.
Specifically, by gas transfer pipeline, gas enters between wafer and turntable from gas outlet.
It optionally, further include driving mechanism, driving mechanism is set to the lower part of turntable, for driving turntable
Around center axis rotation.
Specifically, chemicals is sprayed onto the back side of wafer, while turntable drives wafer to start to rotate, chemicals from
The center of wafer is flowed to the edge direction of wafer, and the removal being convenient for is attached to the particulate matter at crystal column surface or the back side.
Embodiment 1
The embodiment provides a kind of wet clean equipment, comprising:
The surface of turntable, turntable is equipped with using turntable central axis as the gas outlet in the center of circle, and turntable can be around rotation
Platform center axis rotation；Six pins, for six pins using the central axis of turntable as the center of circle, the upper surface circumference along turntable is equidistant
Annular air outlet from setting, and turntable is set to the inside of pin, and multiple pins are used for wafer support on a spinstand,
And prevent wafer by airflow influence horizontal jitter；Being equipped on the part of appliance at crystal round fringes, increased air-flow is logical
Road.
The inside of turntable is equipped with the gas transfer pipeline connecting with gas outlet, and gas outlet is using turntable center as the center of circle
Annular air outlet, gas by gas outlet spray, form airflow layer between wafer and turntable, so that wafer is suspended, through-hole
Gas feed be disposed in proximity to the side of central axis, the gas vent of through-hole is disposed in proximity to the side at the edge of turntable.
The equipment further includes spray head, and spray head is set to the top of turntable, is used for wafer ejecting liquid.Further include
Driving mechanism, driving mechanism is set to the lower part of turntable, for driving turntable around center axis rotation.
Overleaf in cleaning process, wafer frontside is placed downward by manipulator, by gas transfer pipeline, gas from
Gas outlet enters between wafer and turntable, and wafer is made to suspend,, will be chemical by the spray head above wafer when cleaning starts
Drug is sprayed onto the back side of wafer, while turntable drives wafer to start to rotate, and increased airflow channel can slow down crystal round fringes
The gas flow rate at place, improves the pressure difference of wafer two sides up and down, and increased airflow channel can be after dredging flow encounters pin
Reaction reduces pollution of the solution flow down at pin to crystal round fringes, reduces the defect concentration of crystal round fringes, improves product
Yield；Cleaning terminates, and turntable stops rotating, and rinses wafer with deionized water, and dry.
Embodiment 2
A kind of Fig. 8 a sectional elevation structural schematic diagram of turntable according to an embodiment of the invention, Fig. 8 b is according to this
Another rotary display stand structure schematic diagram of one embodiment of invention, a kind of Fig. 9 rotation according to an embodiment of the invention
The gas flow schematic diagram of platform.
Embodiment provides a kind of turntable for wet clean equipment, and the surface of turntable is equipped with turntable central axis
For the annular air outlet 1 in the center of circle, turntable can be around turntable center axis rotation, and the inside of turntable is equipped with and annular air outlet
The gas transfer pipeline 4 of 1 connection, increased airflow channel includes the recess 3 being set on turntable, and recess 3 is close to wafer 2
Edge.
As shown in Figure 8 a, when recess 3 is annular groove, annular groove is circular groove, and the corresponding central angle of circular arc is
Acute angle, size require b > 0.5cm, a >=0, d > 0, and c > 0.5cm, the edge of wafer 2 is in circular groove region.
As shown in Figure 8 b, when recess is downward annular ramp, the gradient of annular ramp is less than or equal to horizontal angle
45 °, in the region a, the vertical range of turntable fringe region and wafer is gradually increased at the edge of wafer, and size requires b >=0, a
>1cm。
As shown in figure 9, the surface of turntable is equipped with downward annular groove close to the edge of wafer 2, gas passes through gas
Body transfer pipeline 4 enters wafer and turntable gap, and the four side border movements (as shown by the arrows in Figure 9) of Xiang Jingyuan form nitrogen
Gas quality stream 14；Chemicals is fallen above crystalline substance, flows to the two sides of wafer, forms acid quality stream 13, when air-flow pass through it is recessed
When falling into 3, space becomes larger, and gas flow rate slows down, and reduces pollution of the cleaning solution to crystal round fringes, and the defect for reducing crystal round fringes is close
Degree, improves product yield.
Embodiment 3
The mount structure schematic diagram in the single-pass hole according to an embodiment of the invention Fig. 4 a, Fig. 4 b according to the present invention one
The pin cross-sectional view in the single-pass hole of a embodiment, the mount structure signal of Fig. 5 a doubled via according to an embodiment of the invention
Figure, the pin cross-sectional view of Fig. 5 b doubled via according to an embodiment of the invention, Fig. 6 a is according to one embodiment of present invention
Circular platform type through-hole mount structure schematic diagram, the pin section view of Fig. 6 b circular platform type through-hole according to an embodiment of the invention
Figure, Fig. 7 a gas according to an embodiment of the invention are applied to the schematic diagram of gas flowing before wafer, and Fig. 7 b is according to this hair
The gas of bright one embodiment is applied to the schematic diagram of gas flowing after wafer.
Embodiment provides a kind of pin for wet clean equipment, and increased airflow channel includes being set to pin top
At least one through-hole 5, through-hole 5 is arranged along the radial direction of pin, the setting of the axis of 5 vertical pin of through-hole, one end of through-hole 5
For gas feed, the other end is gas vent, and the diameter of gas feed is less than or equal to the width of 2/3rds pins.
As shown in Figs. 4a and 4b, through-hole 5 is single through-hole；As shown in figure 5a and 5b, when through-hole 5 is multiple, multiple through-holes 5
It is arranged side by side, the sum of diameter of multiple air inlets is less than or equal to the width of 2/3rds pins.
As shown in figure 6 a and 6b, through-hole 5 is circular platform type, and the diameter of gas feed is more than or equal to the diameter of gas vent.
As illustrated in figs. 7 a and 7b, when 2 two sides of gas flow wafer, after touching pin 6, a part of gas passes through through-hole 5,
A part of gas is applied to the curved surface of pin 6 and flows to both sides, changes gas flow, improves pin 6 to the water conservancy diversion energy of air-flow
Power, to reduce the degree of the solution pollution wafer flow down.
Specific technical features described in the above specific embodiments, in the case of no contradiction, Ke Yitong
Any suitable way is crossed to be combined, in order to avoid unnecessary repetition, the present invention to various combinations of possible ways no longer
It explains separately.
It for example, increasing the airflow channel on turntable and pin on the wet clean equipment simultaneously, that is, include being set to
The through-hole of recess and pin top on turntable slows down gas when the recess on turntable can make air-flow by crystal round fringes
Body flow velocity, at the same the through-hole on pin can dredging flow encounter the reaction after pin, reduce the solution flow down at pin
Pollution to crystal round fringes reduces the defect concentration of crystal round fringes, improves product yield.
Various embodiments of the present invention are described above, above description is exemplary, and non-exclusive, and
It is not limited to disclosed each embodiment.Without departing from the scope and spirit of illustrated each embodiment, for this skill
Many modifications and changes are obvious for the those of ordinary skill in art field.
Claims (18)
1. a kind of wet clean equipment characterized by comprising
The surface of turntable, the turntable is equipped with gas outlet；
Multiple pins, the multiple pin is using the central axis of the turntable as the center of circle, along the upper surface circumference of the turntable
Setting, and the gas outlet of the turntable is set to the inside of the pin, sets on the part of appliance at crystal round fringes
There is increased airflow channel.
2. wet clean equipment according to claim 1, which is characterized in that the increased airflow channel includes being set to
Recess on the turntable, the edge for recessing close to the wafer.
3. wet clean equipment according to claim 2, which is characterized in that the recess is annular groove or downward ring
Shape slope.
4. wet clean equipment according to claim 3, which is characterized in that the annular groove is circular groove.
5. wet clean equipment according to claim 3, which is characterized in that the gradient of the annular ramp and horizontal folder
Angle is less than or equal to 45 °.
6. wet clean equipment according to claim 1, which is characterized in that the increased airflow channel includes being set to
At least one through-hole on the pin top, the through-hole are arranged along the radial direction of the pin.
7. wet clean equipment according to claim 6, which is characterized in that the axis of the vertical pin of the through-hole is set
It sets, one end of the through-hole is gas feed, and the other end is gas vent.
8. wet clean equipment according to claim 7, which is characterized in that the diameter of the gas feed is less than or equal to three
The width of/bis- pins.
9. wet clean equipment according to claim 6, which is characterized in that multiple described when the through-hole is multiple
Through-hole is horizontal or vertical to be arranged side by side.
10. wet clean equipment according to claim 7, which is characterized in that the sum of diameter of multiple air inlets is small
In the width for being equal to 2/3rds pins.
11. wet clean equipment according to claim 7, which is characterized in that the diameter of the gas feed is more than or equal to
The diameter of the gas vent.
12. wet clean equipment according to claim 1, which is characterized in that it further include spray head, the spray head setting
In the top of the turntable.
13. wet clean equipment according to claim 1, which is characterized in that gas is sprayed by the annular air outlet,
Airflow layer is formed between wafer and the turntable, wafer is made to suspend.
14. wet clean equipment according to claim 7, which is characterized in that the gas feed of the through-hole, which is set to, leans on
The side of the nearly central axis, the gas vent of the through-hole are disposed in proximity to the side at the edge of the turntable.
15. wet clean equipment according to claim 1, which is characterized in that the multiple pin is with the turntable
Central axis is the center of circle, and the surface perimeter along the turntable is equidistantly positioned.
16. wet clean equipment according to claim 1, which is characterized in that the gas outlet is to be with turntable center
The annular air outlet in the center of circle, or be multiple ventholes using turntable center as center of circle annular spread.
17. wet clean equipment according to claim 16, which is characterized in that the inside of the turntable be equipped with it is described
The gas transfer pipeline of gas outlet connection.
18. wet clean equipment according to claim 17, which is characterized in that it further include driving mechanism, the driving machine
Structure is set to the lower part of the turntable, for driving the turntable around the center axis rotation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810897848 | 2018-08-08 | ||
| CN2018108978487 | 2018-08-08 |
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| Publication Number | Publication Date |
|---|---|
| CN109411402A true CN109411402A (en) | 2019-03-01 |
| CN109411402B CN109411402B (en) | 2021-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811159489.1A Active CN109411402B (en) | 2018-08-08 | 2018-09-30 | Wet cleaning equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN109411402B (en) | 2021-03-30 |
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