TW518425B - Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore - Google Patents
Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore Download PDFInfo
- Publication number
- TW518425B TW518425B TW90100475A TW90100475A TW518425B TW 518425 B TW518425 B TW 518425B TW 90100475 A TW90100475 A TW 90100475A TW 90100475 A TW90100475 A TW 90100475A TW 518425 B TW518425 B TW 518425B
- Authority
- TW
- Taiwan
- Prior art keywords
- lens
- crystal
- optical
- item
- patent application
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 170
- 230000003287 optical effect Effects 0.000 title claims abstract description 123
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims abstract description 67
- 238000001393 microlithography Methods 0.000 title description 2
- 210000004209 hair Anatomy 0.000 claims description 48
- 210000001161 mammalian embryo Anatomy 0.000 claims description 37
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 36
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 36
- 230000007547 defect Effects 0.000 claims description 18
- 238000002834 transmittance Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 8
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 210000002257 embryonic structure Anatomy 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 230000002596 correlated effect Effects 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 101100294209 Schizosaccharomyces pombe (strain 972 / ATCC 24843) cnl2 gene Proteins 0.000 claims 1
- 239000000284 extract Substances 0.000 claims 1
- 239000000779 smoke Substances 0.000 claims 1
- 239000002023 wood Substances 0.000 claims 1
- 238000001459 lithography Methods 0.000 abstract description 10
- 238000000206 photolithography Methods 0.000 abstract description 5
- 210000000695 crystalline len Anatomy 0.000 description 70
- 239000011575 calcium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GKXJWSZPLIKUPS-IUNAMMOKSA-N N-[(2Z,6Z)-2,6-bis(hydroxyimino)cyclohexylidene]hydroxylamine Chemical compound O\N=C1\CCC\C(=N\O)C1=NO GKXJWSZPLIKUPS-IUNAMMOKSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- LKCQGLAOZXEADP-UHFFFAOYSA-M fluororhenium Chemical compound [Re]F LKCQGLAOZXEADP-UHFFFAOYSA-M 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Toxicology (AREA)
- Lenses (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14115599P | 1999-06-25 | 1999-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW518425B true TW518425B (en) | 2003-01-21 |
Family
ID=22494424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW90100475A TW518425B (en) | 1999-06-25 | 2001-01-08 | Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks therefore |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1224497A4 (fr) |
| TW (1) | TW518425B (fr) |
| WO (1) | WO2001001182A1 (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10123725A1 (de) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren |
| KR20040015251A (ko) | 2001-05-15 | 2004-02-18 | 칼 짜이스 에스엠티 아게 | 불화물 결정 렌즈들을 포함하는 렌즈 시스템 |
| US7239447B2 (en) | 2001-05-15 | 2007-07-03 | Carl Zeiss Smt Ag | Objective with crystal lenses |
| WO2002093201A2 (fr) | 2001-05-16 | 2002-11-21 | Corning Incorporated | Elements optiques a orientation du cristal obtenus a partir de materiaux cubiques |
| US6683710B2 (en) | 2001-06-01 | 2004-01-27 | Optical Research Associates | Correction of birefringence in cubic crystalline optical systems |
| US6649326B2 (en) | 2001-09-14 | 2003-11-18 | Corning Incorporated | Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion |
| US6970232B2 (en) | 2001-10-30 | 2005-11-29 | Asml Netherlands B.V. | Structures and methods for reducing aberration in integrated circuit fabrication systems |
| US7453641B2 (en) | 2001-10-30 | 2008-11-18 | Asml Netherlands B.V. | Structures and methods for reducing aberration in optical systems |
| US6995908B2 (en) | 2001-10-30 | 2006-02-07 | Asml Netherlands B.V. | Methods for reducing aberration in optical systems |
| US6669920B2 (en) | 2001-11-20 | 2003-12-30 | Corning Incorporated | Below 160NM optical lithography crystal materials and methods of making |
| JP3741208B2 (ja) * | 2001-11-29 | 2006-02-01 | 株式会社ニコン | 光リソグラフィー用光学部材及びその評価方法 |
| WO2003076699A1 (fr) * | 2002-03-05 | 2003-09-18 | Corning Incorporated | Procede de fabrication d'une ebauche de cristal de fluorure optiquement oriente |
| WO2003077011A1 (fr) * | 2002-03-14 | 2003-09-18 | Carl Zeiss Smt Ag | Systeme optique a elements optiques birefringents |
| US7292388B2 (en) | 2002-05-08 | 2007-11-06 | Carl Zeiss Smt Ag | Lens made of a crystalline material |
| US7154669B2 (en) * | 2002-08-05 | 2006-12-26 | Asml Holding N.V. | Method and system for correction of intrinsic birefringence in UV microlithography |
| US7072102B2 (en) | 2002-08-22 | 2006-07-04 | Asml Netherlands B.V. | Methods for reducing polarization aberration in optical systems |
| US7075905B2 (en) | 2002-09-11 | 2006-07-11 | Qualcomm Incorporated | Quality indicator bit (QIB) generation in wireless communications systems |
| EP1586946A3 (fr) * | 2004-04-14 | 2007-01-17 | Carl Zeiss SMT AG | Système optique d'un appareil de projection microlithographique |
| EP1598681A3 (fr) | 2004-05-17 | 2006-03-01 | Carl Zeiss SMT AG | Composant optique ayant une surface courbée et un revêtement multicouche |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5031977A (en) * | 1989-12-27 | 1991-07-16 | General Signal Corporation | Deep ultraviolet (UV) lens for use in a photolighography system |
| JPH10260349A (ja) * | 1997-03-18 | 1998-09-29 | Nikon Corp | 紫外線レーザ用結像光学系 |
| JP3856265B2 (ja) * | 1998-03-12 | 2006-12-13 | 株式会社ニコン | 光学素子の製造方法、光学素子の複屈折算出方法及び複屈折判定方法 |
-
2000
- 2000-06-22 EP EP00943048A patent/EP1224497A4/fr not_active Withdrawn
- 2000-06-22 WO PCT/US2000/017165 patent/WO2001001182A1/fr not_active Application Discontinuation
-
2001
- 2001-01-08 TW TW90100475A patent/TW518425B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001001182A1 (fr) | 2001-01-04 |
| EP1224497A4 (fr) | 2003-08-27 |
| EP1224497A1 (fr) | 2002-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |