TW517396B - Infrared detector packaged with improved antireflection element - Google Patents

Infrared detector packaged with improved antireflection element Download PDF

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Publication number
TW517396B
TW517396B TW090132788A TW90132788A TW517396B TW 517396 B TW517396 B TW 517396B TW 090132788 A TW090132788 A TW 090132788A TW 90132788 A TW90132788 A TW 90132788A TW 517396 B TW517396 B TW 517396B
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TW
Taiwan
Prior art keywords
patent application
scope
item
wafer
detector
Prior art date
Application number
TW090132788A
Other languages
English (en)
Chinese (zh)
Inventor
Barrett E Cole
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of TW517396B publication Critical patent/TW517396B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW090132788A 2000-12-29 2001-12-28 Infrared detector packaged with improved antireflection element TW517396B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/751,611 US6627892B2 (en) 2000-12-29 2000-12-29 Infrared detector packaged with improved antireflection element

Publications (1)

Publication Number Publication Date
TW517396B true TW517396B (en) 2003-01-11

Family

ID=25022765

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090132788A TW517396B (en) 2000-12-29 2001-12-28 Infrared detector packaged with improved antireflection element

Country Status (8)

Country Link
US (2) US6627892B2 (https=)
EP (1) EP1350274A2 (https=)
JP (1) JP2004521329A (https=)
KR (1) KR100853002B1 (https=)
CN (1) CN1291501C (https=)
IL (3) IL156694A0 (https=)
TW (1) TW517396B (https=)
WO (1) WO2002054499A2 (https=)

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TWI411963B (zh) * 2005-12-29 2013-10-11 Ibm 偵測包裝開啟的監視裝置

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WO2007038259A2 (en) * 2005-09-23 2007-04-05 Massachusetts Institute Of Technology Optical trapping with a semiconductor
US7968986B2 (en) * 2007-05-07 2011-06-28 Innovative Micro Technology Lid structure for microdevice and method of manufacture
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EP2264765A1 (en) 2009-06-19 2010-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Housing for an infrared radiation micro device and method for fabricating such housing
CN102040185B (zh) * 2009-10-23 2012-09-26 中芯国际集成电路制造(上海)有限公司 承载晶圆的制作方法和承载晶圆
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US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
FR2971083B1 (fr) * 2011-02-02 2014-04-25 Ulis Procede d'assemblage et de fermeture hermetique d'un boitier d'encapsulation
CN103415758A (zh) * 2011-02-18 2013-11-27 日本电气株式会社 红外检测传感器阵列以及红外检测装置
US9250135B2 (en) 2011-03-16 2016-02-02 Honeywell International Inc. MWIR sensor for flame detection
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US9222842B2 (en) 2013-01-07 2015-12-29 Kla-Tencor Corporation High temperature sensor wafer for in-situ measurements in active plasma
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US9337229B2 (en) * 2013-12-26 2016-05-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
EP2947698A1 (en) * 2014-05-22 2015-11-25 ams AG Photonic semiconductor device for enhanced propagation of radiation and method of producing such a semiconductor device
CN104157719A (zh) * 2014-07-08 2014-11-19 浙江大立科技股份有限公司 晶圆级封装红外探测器及其制备方法
DE102016111253A1 (de) 2016-06-20 2017-12-21 Jenoptik Optical Systems Gmbh Vorrichtung mit einem Infrarotdetektor und einem vorgelagerten Schutzfenster
JP2018124279A (ja) * 2017-02-02 2018-08-09 三菱ケミカル株式会社 赤外線センサカバー、赤外線センサモジュール及びカメラ
KR102089866B1 (ko) * 2018-09-19 2020-04-23 한국과학기술원 멤스 소자 및 멤스 디바이스의 제조 방법
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CN112410735B (zh) * 2020-09-29 2022-10-18 天津津航技术物理研究所 一种抗潮解的y2o3基复合薄膜结构及制备方法
KR102923734B1 (ko) * 2020-12-04 2026-02-04 삼성전자주식회사 원적외선 검출 소자, 원적외선 검출 소자 어레이 구조, 원적외선 온도 검출 장치 및 열화상 표시 장치
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Publication number Priority date Publication date Assignee Title
TWI411963B (zh) * 2005-12-29 2013-10-11 Ibm 偵測包裝開啟的監視裝置

Also Published As

Publication number Publication date
US6838306B2 (en) 2005-01-04
US20020117623A1 (en) 2002-08-29
IL156694A0 (en) 2004-01-04
CN1291501C (zh) 2006-12-20
KR100853002B1 (ko) 2008-08-19
IL175508A0 (en) 2006-09-05
IL156694A (en) 2007-08-19
CN1493089A (zh) 2004-04-28
IL175508A (en) 2009-11-18
JP2004521329A (ja) 2004-07-15
KR20040029317A (ko) 2004-04-06
WO2002054499A3 (en) 2002-10-17
EP1350274A2 (en) 2003-10-08
US6627892B2 (en) 2003-09-30
US20040072384A1 (en) 2004-04-15
WO2002054499A2 (en) 2002-07-11

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