JP2004521329A - 改良された反射防止要素を実装した赤外線検出器 - Google Patents

改良された反射防止要素を実装した赤外線検出器 Download PDF

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Publication number
JP2004521329A
JP2004521329A JP2002554887A JP2002554887A JP2004521329A JP 2004521329 A JP2004521329 A JP 2004521329A JP 2002554887 A JP2002554887 A JP 2002554887A JP 2002554887 A JP2002554887 A JP 2002554887A JP 2004521329 A JP2004521329 A JP 2004521329A
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Japan
Prior art keywords
cover
cavity
wafer
detector
pillar
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Pending
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JP2002554887A
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English (en)
Japanese (ja)
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JP2004521329A5 (https=
Inventor
コウル，バーレット・イー
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Honeywell International Inc
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Honeywell International Inc
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Publication of JP2004521329A publication Critical patent/JP2004521329A/ja
Publication of JP2004521329A5 publication Critical patent/JP2004521329A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2002554887A 2000-12-29 2001-12-20 改良された反射防止要素を実装した赤外線検出器 Pending JP2004521329A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/751,611 US6627892B2 (en) 2000-12-29 2000-12-29 Infrared detector packaged with improved antireflection element
PCT/US2001/050463 WO2002054499A2 (en) 2000-12-29 2001-12-20 Infrared detector packaged with improved antireflection element

Publications (2)

Publication Number Publication Date
JP2004521329A true JP2004521329A (ja) 2004-07-15
JP2004521329A5 JP2004521329A5 (https=) 2005-12-22

Family

ID=25022765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002554887A Pending JP2004521329A (ja) 2000-12-29 2001-12-20 改良された反射防止要素を実装した赤外線検出器

Country Status (8)

Country Link
US (2) US6627892B2 (https=)
EP (1) EP1350274A2 (https=)
JP (1) JP2004521329A (https=)
KR (1) KR100853002B1 (https=)
CN (1) CN1291501C (https=)
IL (3) IL156694A0 (https=)
TW (1) TW517396B (https=)
WO (1) WO2002054499A2 (https=)

Cited By (7)

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Publication number Priority date Publication date Assignee Title
JP2007522648A (ja) * 2003-12-29 2007-08-09 ハネウェル・インターナショナル・インコーポレーテッド 一体型上側真空パッケージ
JP2010210293A (ja) * 2009-03-06 2010-09-24 Nec Corp 熱型赤外線センサ、及び熱型赤外線センサの製造方法
US8542433B2 (en) 2011-12-20 2013-09-24 Ngk Insulators, Ltd. Electromagnetic wave oscillating devices and a method of producing the same
US8730565B2 (en) 2011-03-17 2014-05-20 Ngk Insulators, Ltd. Electromagnetic wave radiation element and method for producing same
JP2016178331A (ja) * 2010-09-28 2016-10-06 ケーエルエー−テンカー コーポレイション センサ・ウェーハ、及びセンサ・ウェーハを製造する方法
JP2022174051A (ja) * 2017-02-02 2022-11-22 三菱ケミカル株式会社 赤外線センサカバー、赤外線センサモジュール及びカメラ
JPWO2024247000A1 (https=) * 2023-05-26 2024-12-05

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US6627892B2 (en) * 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element
AUPR245601A0 (en) * 2001-01-10 2001-02-01 Silverbrook Research Pty Ltd An apparatus (WSM09)
US7145143B2 (en) * 2002-03-18 2006-12-05 Honeywell International Inc. Tunable sensor
EP1703562A1 (de) * 2005-03-17 2006-09-20 ELMOS Semiconductor AG Optischer Empfänger mit einer dem menschlichen Auge nachempfundenen spektralen Empfindlichkeit
CN100374832C (zh) * 2005-05-20 2008-03-12 中国科学院上海技术物理研究所 室温铁电薄膜红外焦平面探测器的吸收层及制备方法
JP2008544263A (ja) * 2005-06-27 2008-12-04 エイチエル−プラナー・テクニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 電磁波検出用装置及びそのような装置製造のための方法
WO2007038259A2 (en) * 2005-09-23 2007-04-05 Massachusetts Institute Of Technology Optical trapping with a semiconductor
US7564354B2 (en) * 2005-12-29 2009-07-21 International Business Machines Corporation Monitoring device for detecting opening of packaging
US7968986B2 (en) * 2007-05-07 2011-06-28 Innovative Micro Technology Lid structure for microdevice and method of manufacture
KR100971962B1 (ko) 2008-03-07 2010-07-23 주식회사 이노칩테크놀로지 비접촉식 적외선 온도 센서 모듈 및 이의 제조 방법
FR2936868B1 (fr) * 2008-10-07 2011-02-18 Ulis Detecteur thermique a micro-encapsulation.
EP2264765A1 (en) 2009-06-19 2010-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Housing for an infrared radiation micro device and method for fabricating such housing
CN102040185B (zh) * 2009-10-23 2012-09-26 中芯国际集成电路制造(上海)有限公司 承载晶圆的制作方法和承载晶圆
US8314769B2 (en) 2010-04-28 2012-11-20 Honeywell International Inc. High performance detection pixel
FR2971083B1 (fr) * 2011-02-02 2014-04-25 Ulis Procede d'assemblage et de fermeture hermetique d'un boitier d'encapsulation
CN103415758A (zh) * 2011-02-18 2013-11-27 日本电气株式会社 红外检测传感器阵列以及红外检测装置
US9250135B2 (en) 2011-03-16 2016-02-02 Honeywell International Inc. MWIR sensor for flame detection
FR2985576B1 (fr) 2012-01-05 2014-10-17 Ulis Detecteur infrarouge comportant un boitier integrant au moins un reseau de diffraction
US9222842B2 (en) 2013-01-07 2015-12-29 Kla-Tencor Corporation High temperature sensor wafer for in-situ measurements in active plasma
EP3543779B1 (en) 2013-01-28 2023-04-05 Samsung Display Co., Ltd. Display device
US9337229B2 (en) * 2013-12-26 2016-05-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
EP2947698A1 (en) * 2014-05-22 2015-11-25 ams AG Photonic semiconductor device for enhanced propagation of radiation and method of producing such a semiconductor device
CN104157719A (zh) * 2014-07-08 2014-11-19 浙江大立科技股份有限公司 晶圆级封装红外探测器及其制备方法
DE102016111253A1 (de) 2016-06-20 2017-12-21 Jenoptik Optical Systems Gmbh Vorrichtung mit einem Infrarotdetektor und einem vorgelagerten Schutzfenster
KR102089866B1 (ko) * 2018-09-19 2020-04-23 한국과학기술원 멤스 소자 및 멤스 디바이스의 제조 방법
EP3938747A2 (en) 2019-03-11 2022-01-19 Flir Commercial Systems, Inc. Microbolometer systems and methods
CN112410735B (zh) * 2020-09-29 2022-10-18 天津津航技术物理研究所 一种抗潮解的y2o3基复合薄膜结构及制备方法
KR102923734B1 (ko) * 2020-12-04 2026-02-04 삼성전자주식회사 원적외선 검출 소자, 원적외선 검출 소자 어레이 구조, 원적외선 온도 검출 장치 및 열화상 표시 장치
EP4194823A1 (en) 2021-12-01 2023-06-14 Meridian Innovation Pte Ltd A cover for an infrared detector and its method of fabrication
KR200498510Y1 (ko) * 2021-12-22 2024-11-07 주식회사 한국가스기술공사 적외선 감지기의 점검장치
KR20240050532A (ko) * 2022-10-11 2024-04-19 삼성전자주식회사 열화상 센서 및 이를 포함하는 전자 장치

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US4760440A (en) * 1983-10-31 1988-07-26 General Electric Company Package for solid state image sensors
US4826267A (en) * 1987-11-30 1989-05-02 Rockwell International Corporation Spectral filter with integral antireflection coating
US5151917A (en) * 1991-04-18 1992-09-29 Coherent, Inc. Laser resonators employing diffractive optical elements
US5417799A (en) * 1993-09-20 1995-05-23 Hughes Aircraft Company Reactive ion etching of gratings and cross gratings structures
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US6627892B2 (en) * 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007522648A (ja) * 2003-12-29 2007-08-09 ハネウェル・インターナショナル・インコーポレーテッド 一体型上側真空パッケージ
JP2010210293A (ja) * 2009-03-06 2010-09-24 Nec Corp 熱型赤外線センサ、及び熱型赤外線センサの製造方法
JP2016178331A (ja) * 2010-09-28 2016-10-06 ケーエルエー−テンカー コーポレイション センサ・ウェーハ、及びセンサ・ウェーハを製造する方法
US8730565B2 (en) 2011-03-17 2014-05-20 Ngk Insulators, Ltd. Electromagnetic wave radiation element and method for producing same
US8542433B2 (en) 2011-12-20 2013-09-24 Ngk Insulators, Ltd. Electromagnetic wave oscillating devices and a method of producing the same
JP2022174051A (ja) * 2017-02-02 2022-11-22 三菱ケミカル株式会社 赤外線センサカバー、赤外線センサモジュール及びカメラ
JP7484979B2 (ja) 2017-02-02 2024-05-16 三菱ケミカル株式会社 赤外線センサカバー、赤外線センサモジュール及びカメラ
JPWO2024247000A1 (https=) * 2023-05-26 2024-12-05

Also Published As

Publication number Publication date
TW517396B (en) 2003-01-11
US6838306B2 (en) 2005-01-04
US20020117623A1 (en) 2002-08-29
IL156694A0 (en) 2004-01-04
CN1291501C (zh) 2006-12-20
KR100853002B1 (ko) 2008-08-19
IL175508A0 (en) 2006-09-05
IL156694A (en) 2007-08-19
CN1493089A (zh) 2004-04-28
IL175508A (en) 2009-11-18
KR20040029317A (ko) 2004-04-06
WO2002054499A3 (en) 2002-10-17
EP1350274A2 (en) 2003-10-08
US6627892B2 (en) 2003-09-30
US20040072384A1 (en) 2004-04-15
WO2002054499A2 (en) 2002-07-11

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