KR100853002B1 - 개선된 반사방지 엘리먼트를 갖는 적외선 감지기 패키지 - Google Patents

개선된 반사방지 엘리먼트를 갖는 적외선 감지기 패키지 Download PDF

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Publication number
KR100853002B1
KR100853002B1 KR1020037008903A KR20037008903A KR100853002B1 KR 100853002 B1 KR100853002 B1 KR 100853002B1 KR 1020037008903 A KR1020037008903 A KR 1020037008903A KR 20037008903 A KR20037008903 A KR 20037008903A KR 100853002 B1 KR100853002 B1 KR 100853002B1
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South Korea
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post
cavity
wafer
infrared
etching
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KR20040029317A (ko
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콜바렛이.
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허니웰 인터내셔널 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1020037008903A 2000-12-29 2001-12-20 개선된 반사방지 엘리먼트를 갖는 적외선 감지기 패키지 Expired - Fee Related KR100853002B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/751,611 US6627892B2 (en) 2000-12-29 2000-12-29 Infrared detector packaged with improved antireflection element
US09/751,611 2000-12-29
PCT/US2001/050463 WO2002054499A2 (en) 2000-12-29 2001-12-20 Infrared detector packaged with improved antireflection element

Publications (2)

Publication Number Publication Date
KR20040029317A KR20040029317A (ko) 2004-04-06
KR100853002B1 true KR100853002B1 (ko) 2008-08-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037008903A Expired - Fee Related KR100853002B1 (ko) 2000-12-29 2001-12-20 개선된 반사방지 엘리먼트를 갖는 적외선 감지기 패키지

Country Status (8)

Country Link
US (2) US6627892B2 (https=)
EP (1) EP1350274A2 (https=)
JP (1) JP2004521329A (https=)
KR (1) KR100853002B1 (https=)
CN (1) CN1291501C (https=)
IL (3) IL156694A0 (https=)
TW (1) TW517396B (https=)
WO (1) WO2002054499A2 (https=)

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KR100971962B1 (ko) 2008-03-07 2010-07-23 주식회사 이노칩테크놀로지 비접촉식 적외선 온도 센서 모듈 및 이의 제조 방법

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US6627892B2 (en) * 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element
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US7145143B2 (en) * 2002-03-18 2006-12-05 Honeywell International Inc. Tunable sensor
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
EP1703562A1 (de) * 2005-03-17 2006-09-20 ELMOS Semiconductor AG Optischer Empfänger mit einer dem menschlichen Auge nachempfundenen spektralen Empfindlichkeit
CN100374832C (zh) * 2005-05-20 2008-03-12 中国科学院上海技术物理研究所 室温铁电薄膜红外焦平面探测器的吸收层及制备方法
JP2008544263A (ja) * 2005-06-27 2008-12-04 エイチエル−プラナー・テクニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 電磁波検出用装置及びそのような装置製造のための方法
WO2007038259A2 (en) * 2005-09-23 2007-04-05 Massachusetts Institute Of Technology Optical trapping with a semiconductor
US7564354B2 (en) * 2005-12-29 2009-07-21 International Business Machines Corporation Monitoring device for detecting opening of packaging
US7968986B2 (en) * 2007-05-07 2011-06-28 Innovative Micro Technology Lid structure for microdevice and method of manufacture
FR2936868B1 (fr) * 2008-10-07 2011-02-18 Ulis Detecteur thermique a micro-encapsulation.
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CN102040185B (zh) * 2009-10-23 2012-09-26 中芯国际集成电路制造(上海)有限公司 承载晶圆的制作方法和承载晶圆
US8314769B2 (en) 2010-04-28 2012-11-20 Honeywell International Inc. High performance detection pixel
US10720350B2 (en) * 2010-09-28 2020-07-21 Kla-Tencore Corporation Etch-resistant coating on sensor wafers for in-situ measurement
FR2971083B1 (fr) * 2011-02-02 2014-04-25 Ulis Procede d'assemblage et de fermeture hermetique d'un boitier d'encapsulation
CN103415758A (zh) * 2011-02-18 2013-11-27 日本电气株式会社 红外检测传感器阵列以及红外检测装置
US9250135B2 (en) 2011-03-16 2016-02-02 Honeywell International Inc. MWIR sensor for flame detection
WO2012124829A1 (ja) 2011-03-17 2012-09-20 日本碍子株式会社 電磁波放射素子およびその製造方法
JP2013130609A (ja) 2011-12-20 2013-07-04 Ngk Insulators Ltd 電磁波放射素子およびその製造方法
FR2985576B1 (fr) 2012-01-05 2014-10-17 Ulis Detecteur infrarouge comportant un boitier integrant au moins un reseau de diffraction
US9222842B2 (en) 2013-01-07 2015-12-29 Kla-Tencor Corporation High temperature sensor wafer for in-situ measurements in active plasma
EP3543779B1 (en) 2013-01-28 2023-04-05 Samsung Display Co., Ltd. Display device
US9337229B2 (en) * 2013-12-26 2016-05-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
EP2947698A1 (en) * 2014-05-22 2015-11-25 ams AG Photonic semiconductor device for enhanced propagation of radiation and method of producing such a semiconductor device
CN104157719A (zh) * 2014-07-08 2014-11-19 浙江大立科技股份有限公司 晶圆级封装红外探测器及其制备方法
DE102016111253A1 (de) 2016-06-20 2017-12-21 Jenoptik Optical Systems Gmbh Vorrichtung mit einem Infrarotdetektor und einem vorgelagerten Schutzfenster
JP2018124279A (ja) * 2017-02-02 2018-08-09 三菱ケミカル株式会社 赤外線センサカバー、赤外線センサモジュール及びカメラ
KR102089866B1 (ko) * 2018-09-19 2020-04-23 한국과학기술원 멤스 소자 및 멤스 디바이스의 제조 방법
EP3938747A2 (en) 2019-03-11 2022-01-19 Flir Commercial Systems, Inc. Microbolometer systems and methods
CN112410735B (zh) * 2020-09-29 2022-10-18 天津津航技术物理研究所 一种抗潮解的y2o3基复合薄膜结构及制备方法
KR102923734B1 (ko) * 2020-12-04 2026-02-04 삼성전자주식회사 원적외선 검출 소자, 원적외선 검출 소자 어레이 구조, 원적외선 온도 검출 장치 및 열화상 표시 장치
EP4194823A1 (en) 2021-12-01 2023-06-14 Meridian Innovation Pte Ltd A cover for an infrared detector and its method of fabrication
KR200498510Y1 (ko) * 2021-12-22 2024-11-07 주식회사 한국가스기술공사 적외선 감지기의 점검장치
KR20240050532A (ko) * 2022-10-11 2024-04-19 삼성전자주식회사 열화상 센서 및 이를 포함하는 전자 장치
WO2024247000A1 (ja) * 2023-05-26 2024-12-05 三菱電機株式会社 赤外線撮像装置

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Publication number Priority date Publication date Assignee Title
KR100971962B1 (ko) 2008-03-07 2010-07-23 주식회사 이노칩테크놀로지 비접촉식 적외선 온도 센서 모듈 및 이의 제조 방법

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Publication number Publication date
TW517396B (en) 2003-01-11
US6838306B2 (en) 2005-01-04
US20020117623A1 (en) 2002-08-29
IL156694A0 (en) 2004-01-04
CN1291501C (zh) 2006-12-20
IL175508A0 (en) 2006-09-05
IL156694A (en) 2007-08-19
CN1493089A (zh) 2004-04-28
IL175508A (en) 2009-11-18
JP2004521329A (ja) 2004-07-15
KR20040029317A (ko) 2004-04-06
WO2002054499A3 (en) 2002-10-17
EP1350274A2 (en) 2003-10-08
US6627892B2 (en) 2003-09-30
US20040072384A1 (en) 2004-04-15
WO2002054499A2 (en) 2002-07-11

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