TW512450B - Apparatus and method to dice integrated circuits from a wafer using a pressurized jet - Google Patents

Apparatus and method to dice integrated circuits from a wafer using a pressurized jet Download PDF

Info

Publication number
TW512450B
TW512450B TW90124783A TW90124783A TW512450B TW 512450 B TW512450 B TW 512450B TW 90124783 A TW90124783 A TW 90124783A TW 90124783 A TW90124783 A TW 90124783A TW 512450 B TW512450 B TW 512450B
Authority
TW
Taiwan
Prior art keywords
wafer
holder
cutting
cutting nozzle
abrasive
Prior art date
Application number
TW90124783A
Other languages
Chinese (zh)
Inventor
Robert Cole
David James Quirke
Chris P Calkins
Original Assignee
Lightwave Microsystems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/874,950 external-priority patent/US6705925B1/en
Application filed by Lightwave Microsystems Corp filed Critical Lightwave Microsystems Corp
Application granted granted Critical
Publication of TW512450B publication Critical patent/TW512450B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24CABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/04Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
    • B24C1/045Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass for cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

An apparatus and method to cut irregularly shaped dice from a wafer using a fluid jet cutting system. One embodiment of the invention involves a method to cut irregularly shaped dice from a wafer, such as planar light-wave circuit device. The method includes placing a wafer on a fixture; aligning the wafer in the fixture to expose the dice to a fluid jet cutting nozzle; supplying an abrasive to the fluid jet cutting nozzle; supplying a pressurized fluid to the fluid jet cutting nozzle expelling the abrasive in combination with the fluid from the fluid jet cutting nozzle at a velocity sufficient to cut through the wafer, while the fluid jet cutting nozzle moves in relation to the wafer in the fixture; and removing the dice from the fixture after the dice have been cut from the wafer. A second embodiment of the invention is directed to an apparatus to provide a wafer die cutting system to cut a wafer. The apparatus includes a fixture to align and hold the wafer a cutting nozzle to expel a fluid and an abrasive towards the wafer at a velocity sufficient to cut through the wafer, a fluid source to supply the fluid to the cutting nozzle; an abrasive source to supply the abrasive to the cutting nozzle; and a mechanism to move the cutting nozzle relative to the wafer in the fixture.

Description

512450 A7 B7 五、發明說明(i ) [發明之背景] [發明之領域] 本發明一般係有關用高壓喷流切割積體電路之裝置及 方法,更精確地說為用研磨喷水器(abrasive water jet)將晶 圓切割成例如平面光波電路(planar light-wave circuits)之 積體電路的裝置及方法。 [先前技術之描述] 平面光波電路(PLC)有漸被使用於許多光學和電子光 學系統的趨勢(例如電腦系統、可程式化電子系統、電信交 換系統、控制系統、等等)。平面光波電路可於晶圓上製造, 其方法幾乎和在半導體晶圓上製造電子積體電路相同。某 些情況下平面光波電路可如電子積體電路晶片在晶圓之矩 形片上製造,但是為了增加各別晶圓之平面光波電路的產 量大部份以在不規則形狀之晶圓上製造平面光波電路較 佳。 第1A圖說明晶圓之一部份,包含相同之不規則形狀 的平面光波電路陣列102、104、106、108、11〇、112和 114。每一平面光波電路包含從晶圓之116和118(以虛線 表示)切割後不完全吻合矩形樣本之非矩形構造。圖1B顯 示傳統之矩形晶粒切割的情形,其會損失數個平面光波電 路,祗有平面光波電路110仍完整而平面光波電路1〇6、 108、112和114則已受損。藉切割晶圓成分開之非矩形晶 片的切割裝置和方法可大幅改善每一平面光波電路晶圓之 產量和製造成本。第1C圖說明從晶圓經精準切割後之平 本紙張尺度適用中國國家標準(CNS>A4規格(210 X 297公t _ ^ 1 ~~9Ϊ856" 裝---- (請先閱讀背面之注意事項再填寫本頁) 訂. -if ϋ 512450 五、發明說明(2 ) 面光波電路102。 然而’以目前傳統之晶圓切割方法和裝置(即一旋轉—研 磨片鑛)將晶圓切割成如此之不規則形狀有極大的困難。傳 統之晶圓切割方法和裝置特別不適合將一晶粒切割成非矩 形之邊緣。雷射切割法可從晶圓上進行不規則形狀晶粒之 切割’但是其存有許多的缺點。這些缺點包括很高的設備 和作業成本,並且由於熱應力以及晶圓上不同的構造和層 次有不同雷射能吸收度而導致邊緣不良之切割品質。此雷 射晶粒切割之邊緣不良品質會造成晶粒的斷裂而終究傳播 至晶粒中央,故產生作業和可靠性的問題。 因此為了從各別晶圓增加其晶粒的產量以及降低製造 晶粒之單位成本,本領域之技藝中亟需一種從晶圓切割不 規則形狀之晶粒的低成本裝置和方法。 本領域之技藝中亦亟需一種裝置和方法,其切割時所 造成之斷裂不會傳播至晶粒中央的操作區而可得到高品質 之晶粒邊緣。 [發明之概述] 為了增加各別晶圓之晶粒產量以及減少製造晶粒之單 位成本,本發明提供一種從晶圓切割不規則形狀之晶粒的 低成本裝置和方法。 本發明亦提供一種能切割出高品質之晶粒邊緣而不會 將斷裂傳播至晶粒的操作區之裝置和方法。 本發明之第一個態樣為針對從晶圓切割不規則形狀之 晶粒的方法。此方法包括將晶圓置於固定器上、對準固定 本紙張尺度過用中國國家標準(CNS)A4規格(210 x 297公笼) 512450 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(3 ) 器内之晶圓而使多個晶粒能曝露於噴流切叫嘴、當喷流切 割嘴移動到固定器上晶圓之相關位置時以足夠切穿該晶圓 之流速從喷流切割嘴排出混+液體之㈣、以及從晶圓切 割下晶粒之後從固定器取出該晶粒。 本發明之第二個態樣為提供切割晶圓之晶圓切割系統 的裝置。此裝置包括可校準和固定晶圓的固定器、以足夠 切牙該晶圓之流速朝晶圓排出液體和磨料的切割嘴、供應 該切割嘴液體之液體供應源、供應該切割嘴磨料之磨料供 應源 '以及機械裝置,可移動切割嘴至晶圓之相對位置。 本發明之優點可從下述本發明之詳細說明和附圖中經 由本領域内之技藝獲得充份的瞭解。 [圖式之簡單說明] 第1A圖說明晶圓之一部份,含有相同之不規則形狀 的平面光波電路陣列。 圖1B顯示傳統之矩形晶粒切割的情形,其會失去數 個平面光波電路,祗有一平面光波電路仍完整而其它四條 平面光波電路則已受損。 第1C圖說明從晶圓經精準切割後之平面光波電路。 第2圖利用一切片晶圓說明本發明之一實施例。 第3圖說明本發明實施例的一個固定器。 第4圖說明本發明之另一實施例,使用具有可視校準 系統之喷流切割系統。 第5圖說明具有校準標誌之晶圓的實施例,其藉一台 或以上的照像機進行可視校準。 ^-------- (請先閱讀背.面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 3 91856 512450512450 A7 B7 V. Description of the invention (i) [Background of the invention] [Field of the invention] The present invention generally relates to a device and method for cutting an integrated circuit with a high-pressure jet, and more specifically, an abrasive sprayer (abrasive Water jet) device and method for cutting a wafer into integrated circuits such as planar light-wave circuits. [Description of the prior art] The planar light wave circuit (PLC) has a tendency to be used in many optical and electronic optical systems (such as computer systems, programmable electronic systems, telecommunication switching systems, control systems, etc.). Planar lightwave circuits can be fabricated on a wafer in much the same way as electronic integrated circuits are fabricated on a semiconductor wafer. In some cases, planar lightwave circuits can be manufactured on wafers such as electronic integrated circuit wafers, but in order to increase the production of planar lightwave circuits for individual wafers, most of them are used to produce planar lightwaves on irregularly shaped wafers. The circuit is better. Figure 1A illustrates a portion of a wafer containing planar lightwave circuit arrays 102, 104, 106, 108, 110, 112, and 114 of the same irregular shape. Each planar lightwave circuit includes a non-rectangular structure that does not completely fit a rectangular sample after being cut from wafers 116 and 118 (indicated by dashed lines). Fig. 1B shows the conventional rectangular die cutting situation, which will lose several plane lightwave circuits. The plane lightwave circuit 110 is still intact and the plane lightwave circuits 106, 108, 112, and 114 are damaged. The cutting device and method for cutting non-rectangular wafers by cutting wafer components can greatly improve the yield and manufacturing cost of each planar lightwave circuit wafer. Figure 1C illustrates that the size of the plain paper after precision cutting from the wafer applies the Chinese national standard (CNS > A4 specification (210 X 297 male t _ ^ 1 ~~ 9Ϊ856 ") ------------ Please read the note on the back first Please fill out this page again) Order. -If ϋ 512450 V. Description of the invention (2) Surface light wave circuit 102. However, the wafer is cut into the traditional wafer dicing method and device (ie, a rotating-grinding wafer ore). Such irregular shapes have great difficulties. Traditional wafer cutting methods and devices are particularly unsuitable for cutting a die into non-rectangular edges. Laser cutting can cut irregularly shaped die from a wafer. There are many disadvantages. These disadvantages include high equipment and operating costs, and poor cutting quality due to thermal stress and different laser energy absorption of different structures and layers on the wafer. This laser crystal The bad quality of the edge of the grain cut will cause the fracture of the die and eventually spread to the center of the die, so there will be problems in operation and reliability. Therefore, in order to increase the yield of the die and reduce the individual wafers The unit cost of manufacturing a die requires a low-cost device and method for cutting irregular-shaped die from a wafer in the art of the art. There is also an urgent need for a device and method in the art of the art. The fracture will not propagate to the operating area in the center of the die and high-quality die edges can be obtained. [Summary of the Invention] In order to increase the yield of individual wafers and reduce the unit cost of manufacturing the die, the present invention provides a Low-cost device and method for cutting irregular-shaped grains from a wafer. The present invention also provides a device and method capable of cutting out high-quality grain edges without propagating fractures to the operation area of the grains. The present invention The first aspect is a method for cutting irregularly shaped grains from a wafer. This method includes placing the wafer on a holder, aligning and fixing the paper size and using the Chinese National Standard (CNS) A4 specification ( (210 x 297 male cages) 512450 A7 B7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) The wafers in the device can expose multiple die to the jet cutting nozzle, when When the flow cutting nozzle is moved to the relevant position of the wafer on the holder, the mixed liquid is discharged from the jet cutting nozzle at a flow rate sufficient to cut through the wafer, and the crystal is removed from the holder after the die is cut from the wafer. The second aspect of the present invention is a device for providing a wafer cutting system for dicing a wafer. The device includes a holder capable of calibrating and fixing the wafer, and discharging liquid toward the wafer at a flow rate sufficient to cut the wafer. And the cutting tip of the abrasive, the liquid supply source for supplying the cutting tip liquid, the abrasive supply source for supplying the cutting tip abrasive, and the mechanical device, the cutting tip can be moved to the relative position of the wafer. The advantages of the present invention can be obtained from the following The detailed description of the invention and the drawings are fully understood through the art in the art. [Simplified Description of the Drawings] Figure 1A illustrates a part of a wafer that contains the same irregularly shaped planar lightwave circuit array. Fig. 1B shows a conventional rectangular die-cutting situation, which will lose several planar lightwave circuits. One planar lightwave circuit is still intact and the other four planar lightwave circuits are damaged. Figure 1C illustrates a planar lightwave circuit after the wafer is accurately cut. FIG. 2 illustrates an embodiment of the present invention using all wafers. FIG. 3 illustrates a holder according to an embodiment of the present invention. Figure 4 illustrates another embodiment of the present invention using a jet cutting system with a visual calibration system. Figure 5 illustrates an embodiment of a wafer with a calibration mark, which is visually calibrated by one or more cameras. ^ -------- (Please read the notes on the back and then fill out this page) This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) 3 91856 512450

五、發明說明(4 ) 第6圖說明切割頭組件之一個實施例。 第7圖顯示根據本發明之一個實施例在喷流切割系統 上對準和切割晶圓的流程圖。 第8圖顯示根據本發明之另一實施例從晶圓切割晶粒 之流程圖。 [元件符號說明] -------------裝·— (請先閱讀背面之注意事項再填寫本頁) 訂: •線 經 濟 部 智 慧 財 產- 局 員· X 消 費 合 作 社 印 製 102 、 1〇4 、 106 、 1〇8 、 110 、 112 、11 4 平面光波電路 116、11 8非矩形構造 200 晶圓切片 2〇2 晶粒 204 ^ 206、208切割線 3 〇〇 固定器 304 ' 306、308定位止動器 310、312固定器底半部314 表面溝槽 316 凹槽 402 喷流切割系統 404 十字準線發電機 406 電腦硬体/軟体 4〇8 照像機 410 監視器 412 、 414 、 416 、 418 、 420 > 422 信號 500、614 晶圓 502 不規則晶粒 504、506校準標誌 600 切割頭組件 602 °?p 筒 606 磨料入口 608 切割頭体部 610 混合管 612 噴嘴 [本發明之詳細說明] 本發明提供一種利用曲線切割方法從基片(例如晶圓 或晶板)切割不規則或規則形狀之晶粒的裝置和方法。在本 發明之一個實施例中, 從晶圓切割下彎曲邊緣(非直線、非 本紙張尺度適用t國國家標準(CNS)A4規格⑵〇x 297公爱) 4 91856 512450 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 矩形)之平面光波電路晶粒。在許多實施例中,基片之組成 材料為,例如聚合物之各種組合物、陶瓷、玻璃(例如矽酸 硼玻璃以及其它低係數熱膨脹玻璃)、純或滲雜矽、鍺、砷 化鎵、或其它ΠΙ-ν元素或II-VI元素之半導體化合物。 此系統以使用例如水之相對非可壓縮流體較佳,其壓 力為從每平方吋36,000磅(36,000 PSI或2,400 bar)至 100.000 PSI(7,000 bar)。在其它實施例中,水的壓力為從 40.000 PSI(2,700 bar)至 60,000 PSI(4,100 bar) 〇 切割材料所需之動能來自加壓水或其它液體所提供之 超高麼力,並藉聚集該高速液艎形成緊密切割水流以非常 小的内徑通過切割嘴。此喷流切割系統之主要構件為加磨 泵。 為達此壓力,藉由增壓泵和過濾器將水引入裝置内。 該過濾器在水到達超高壓之前將其過濾以保護該高壓栗之 零件並提供連續的切割水流。在過濾水進入高壓哪筒之 後’將水加壓至所欲之強度。然後將水輸送至研磨水切割5. Description of the Invention (4) FIG. 6 illustrates an embodiment of the cutting head assembly. Figure 7 shows a flow chart for aligning and cutting a wafer on a jet cutting system according to an embodiment of the present invention. FIG. 8 shows a flowchart of dicing a die from a wafer according to another embodiment of the present invention. [Description of Component Symbols] ------------- Installation · — (Please read the precautions on the back before filling this page) Order: • Intellectual Property of the Ministry of Economic Affairs-Bureaux · Printed by X Consumer Cooperative 102, 104, 106, 108, 110, 112, 11 4 Planar light wave circuit 116, 11 8 Non-rectangular structure 200 Wafer slicing 202 Grain 204 ^ 206, 208 Cutting line 3 00 Holder 304 '' 306, 308 Positioning stopper 310, 312 Holder bottom half 314 Surface groove 316 Groove 402 Jet cutting system 404 Crosshair generator 406 Computer hardware / software 408 Camera 410 Monitor 412 , 414, 416, 418, 420 > 422 signal 500, 614 wafer 502 irregular die 504, 506 calibration mark 600 cutting head assembly 602 °? P barrel 606 abrasive inlet 608 cutting head body 610 mixing tube 612 nozzle [ Detailed description of the present invention] The present invention provides an apparatus and method for cutting irregular or regular-shaped crystal grains from a substrate (such as a wafer or a crystal plate) by a curve cutting method. In one embodiment of the present invention, the curved edge is cut from the wafer (non-straight, non-paper size applies to National Standard (CNS) A4 specification ⑵ × 297 public love) 4 91856 512450 A7 B7 intellectual property of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau of the People's Republic of China. 5. The invention's description (rectangular) of plane light wave circuit grains. In many embodiments, the constituent materials of the substrate are, for example, various compositions of polymers, ceramics, glass (such as borosilicate glass and other low coefficient thermal expansion glass), pure or doped silicon, germanium, gallium arsenide, Or other semiconductor compounds of III-v or II-VI elements. This system is preferred to use relatively non-compressible fluids such as water, with pressures ranging from 36,000 pounds per square inch (36,000 PSI or 2,400 bar) to 100.000 PSI (7,000 bar). In other embodiments, the pressure of the water is from 40.000 PSI (2,700 bar) to 60,000 PSI (4,100 bar). The kinetic energy required to cut the material comes from the ultra-high force provided by pressurized water or other liquids, and borrows This high-speed liquid magma is gathered to form a tight cutting water flow through the cutting nozzle with a very small inner diameter. The main component of this jet cutting system is a grinding pump. To achieve this pressure, water is introduced into the device by means of a booster pump and a filter. The filter filters water before it reaches ultra-high pressure to protect the high-pressure pump and provide a continuous stream of cutting water. After filtering the water into a high pressure cylinder, the water is pressurized to the desired strength. Then water is sent to the abrasive water to cut

^ifcK 嘴〇 在本發明之一個實施例中,研磨裝置供應密網磨料 (fine mesh abrasive)至該切割水流。一個典型的研磨裝置 包括磨料漏斗、磨料進給系統、氣動控制開/關閥、以及研 磨切割嘴。 此磨料首先貯存於加壓磨料漏斗内然後輸送至計量組 件,此計量組件可控制粒子進給至切割嘴的數量。該磨料 於是引入磨料切割頭内特殊混合室内之切割水流。較硬的 k紙張尺度適用t國國家標準(CNS)A4規格(210 X 297公爱) -------- 3 91856 ▼I ^--------^--------. (請先閱讀背面之注音?事項再填寫本頁) 6 512450 五、發明說明(6 ) |材料可加速其磨損過程而以較快的速率進行研磨切割。在 切割之後,切割水流所殘餘之能量被分散至收集筒,此收 集筒可貯放切缝材料(即洗下之基片材料)和廢磨料。 重覆使用較硬但較昂貴之廢磨料較為經濟,並且可提 高切割和機器的作業效率。例如,在切割作業中可用碳化 矽取代較低成本之石榴石(garnet)。在一些實施例中,使用 磨料之濃度為以重量計約5至約60%。 可使用各種的磨料粉末,例如橄境石(〇Hvine)、石權 石、金鋼砂(corundum)、氧化鋁、金鋼鑽、矽石、碳化鎢、 碳化矽、各種陶瓷粉末,以及類似之硬粉末(例如金屬氧化 物之化合物)。在一些實施例中,磨料粒子的平均直徑約從 0.1微米至2,000微米。在其它實施例中,其平均直徑約從 0.1微米至200微米。 在一個實施例中,平均粒子直徑不超過喷嘴直徑的約 •I 2 0 % ’以及在其它實施例中,其平均粒子直徑不超過噴嘴 直徑的10%。如果平均粒子直徑較大時,則喷嘴可能因,, 封孔(bridging)”而造成阻塞。 切割嘴之直徑通常以其它參量來決定。特別是,切割 嘴之喷嘴的直徑以下列之參量來決定:第一,較大的嘴嘴 寬度’其嘴流之寬度較大’並且切縫亦較大。切割之準確 度通常和切割嘴之喷嘴的直徑成反比。通常,切割較薄之 材料時,喷嘴愈小其它參量的準確度和細緻度愈高。每單 位切割長度使用較少的切割介質。第二,較大的喷嘴寬度, 其嗜流之質量流量較大’並且切割速率亦較快。因此, 91856 ^ ^---------線 (請先閱讀背面之注意事項再填寫本頁) A7 經濟部智慧財產局員工消費合作社印製^ ifcK nozzle 〇 In one embodiment of the present invention, the grinding device supplies a fine mesh abrasive to the cutting water stream. A typical grinding unit includes an abrasive hopper, an abrasive feed system, a pneumatically controlled on / off valve, and a grinding cutting nozzle. This abrasive is first stored in a pressurized abrasive hopper and then delivered to a metering unit, which controls the amount of particles fed to the cutting nozzle. The abrasive is then introduced into the cutting water flow in the special mixing chamber inside the abrasive cutting head. The harder k paper size is applicable to the national standard (CNS) A4 specification (210 X 297 public love) -------- 3 91856 ▼ I ^ -------- ^ ----- ---. (Please read the note on the back? Matters before filling out this page) 6 512450 V. Description of the invention (6) | The material can accelerate its wear process and cut and grind at a faster rate. After cutting, the energy remaining from the cutting water flow is distributed to the collecting cylinder, which can store the slit material (that is, the washed substrate material) and waste abrasive. Repeated use of harder but more expensive waste abrasives is more economical and improves cutting and machine efficiency. For example, silicon carbide can be used to replace lower cost garnets in cutting operations. In some embodiments, the abrasive is used at a concentration of about 5 to about 60% by weight. A variety of abrasive powders can be used, such as ovine, stone, corundum, alumina, diamond, silica, tungsten carbide, silicon carbide, various ceramic powders, and the like Hard powder (such as compounds of metal oxides). In some embodiments, the average diameter of the abrasive particles is from about 0.1 microns to 2,000 microns. In other embodiments, the average diameter is from about 0.1 microns to 200 microns. In one embodiment, the average particle diameter does not exceed about I20% of the nozzle diameter, and in other embodiments, the average particle diameter does not exceed 10% of the nozzle diameter. If the average particle diameter is large, the nozzle may be blocked due to "bridging". The diameter of the cutting nozzle is usually determined by other parameters. In particular, the diameter of the nozzle of the cutting nozzle is determined by the following parameters : First, the larger the mouth width 'the mouth flow width is larger' and the slit is larger. The accuracy of cutting is usually inversely proportional to the diameter of the nozzle of the cutting mouth. Generally, when cutting thinner materials, The smaller the nozzle, the higher the accuracy and meticulousness of other parameters. Use less cutting medium per unit of cutting length. Second, the larger the nozzle width, the greater the mass flow of splatter 'and the faster the cutting rate. Therefore, the 91856 ^ ^ --------- line (please read the precautions on the back before filling this page) A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

五、發明說明(8 ) 例。切割204、206和208時必須對準光學蝕刻法之晶粒 202,俾使得該切片晶圓200可正確地定位止動於固定器上 以利於在喷流切割系統上進行切割,儘管該晶粒2〇2在切 片晶圓200上進行光學兹刻法時有位置的偏差。 在一個實施例中,204和2〇6為垂直於2〇8之平行切 割線。所有這些切割線均由一個具有精確校準系統之切割 機器所切割而成,例如有一台或一台以上之照像機的視覺 校準系統,該等像機可檢視每一晶圓上製造晶粒之相同光 學蝕刻法所產生之校準標誌。在另一個實施例中,這些切 割線204、206和208由能準確校準各分段晶圓2〇〇上切割 線204、206和208朝晶片202之方向的任何切割系統所切 割而成。 第3圖顯示本發明之一個實施例的固定器3〇〇β此固 疋器300有定位止動器304、306和308(例如有矩形或其 它多角形橫截面之柱或銷,或栅攔),可校準該喷流切割系 統之X-軸、Y·轴和Θ(斜角)之方向。在另一實施例中,該 切片晶圓200有多條切割線通過各個晶圓(如第2圖所 示),其精確吻合定位止動器3〇4、306和308對應晶粒202 之位置。 在另一實施例中,定位止動器為直徑從60密耳(0.15 厘米)至500密耳(1.25厘米)以及高度約從約20密耳(0.05 厘米)至100密耳(0.25厘米)之銷。三個銷已足夠正確地校 準一個晶圓切片在固定器300内,但是,於另一個實施例 可使用多於3個以上之銷、一柵欄(例如一個矩形突出物) 五、發明說明(9 ) 和一銷、或兩個栅欄以校準在固定器300内之一個晶圓切 y該等銷和栅攔通常用和固定器相同的材料所製成,但 疋’銷和拇攔可由不同之材料所製成。 在-個實施例令’固定器300的厚度為從2英时(51 厘米)至10英对(25.4厘米此固定肖3⑽較佳方式為包 括晶粒下之表面溝槽314’以做為握持晶圓切割後之晶粒 的真空凹面,以及在晶粒切割路徑下的凹槽,其可填 注部份的水份以吸收喷流動能並且可減少 切割。在另-實施例中’真空凹面的深度為5〇密耳(〇125 厘米)以及寬度為50密耳(0.125厘米),凹槽的深度為ι 5 英吋(3.75厘米)以及寬度為200密耳5〇厘米)。此真空 凹面連接至該固定器内部的管道網絡(未顯示),以及該; 道之外部經由閥和軟管(未顯示)連接至真空泵。其它之實 施例中,可利用適當晶粒之特殊位置和尺寸做為真空凹面 和凹槽,或選擇不使用該真空凹面和凹槽。 在另外的實施例中’固定器300為由不銹鋼(例如44〇c 硬化不銹鋼或303不銹鋼)所製成。一些實施例之固定器選 自低重置成本(例如銘、銘合金、玻璃、或相等物)或對喷 流切割有較大的抗力(例如鋼合金、各種不鱗鋼、欽人金、 陶瓷、以及其類似物)等之材料。 在另外的實施例中,固定器300有螺栓底半部31〇而 定位止動器304、306和308穿過其可移動上半部312使該 固定器300之上半部312的方向能準確對應該噴流切割系 統。在另一實施例中,固定器300並無上半部或底半部, 512450 K' n Α7V. Description of Invention (8) Example. When cutting 204, 206, and 208, the die 202 of the optical etching method must be aligned, so that the slice wafer 200 can be correctly positioned and stopped on the holder to facilitate cutting on the jet cutting system, although the die There is a positional deviation when performing the optical engraving method on the dicing wafer 200. In one embodiment, 204 and 206 are parallel cut lines perpendicular to 208. All of these cutting lines are cut by a cutting machine with a precision calibration system, such as a vision calibration system with one or more cameras that can inspect the die on each wafer Calibration marks produced by the same optical etching method. In another embodiment, these cutting lines 204, 206, and 208 are cut by any cutting system capable of accurately aligning the cutting lines 204, 206, and 208 on each segmented wafer 200 toward the wafer 202. FIG. 3 shows a holder 300 according to an embodiment of the present invention. The holder 300 has positioning stops 304, 306, and 308 (for example, a post or pin having a rectangular or other polygonal cross section, or a fence). ), The X-axis, Y-axis, and Θ (bevel) directions of the jet cutting system can be calibrated. In another embodiment, the slicing wafer 200 has a plurality of cutting lines passing through each wafer (as shown in FIG. 2), which precisely match the positions of the positioning stops 304, 306 and 308 corresponding to the die 202. . In another embodiment, the positioning stop is a diameter from 60 mils (0.15 cm) to 500 mils (1.25 cm) and a height of about 20 mils (0.05 cm) to 100 mils (0.25 cm) pin. Three pins are sufficient to correctly align a wafer slice in the holder 300; however, in another embodiment, more than three pins and a fence (such as a rectangular protrusion) can be used. 5. Description of the invention (9 ) And a pin or two fences to align a wafer in the holder 300. The pins and bars are usually made of the same material as the holder, but the pins and the bars can be different. Made of materials. In one embodiment, the thickness of the holder 300 is from 2 inches (51 cm) to 10 inches (25.4 cm). The preferred method is to include a surface groove 314 under the die as a grip. The vacuum concave surface of the die after the wafer is cut and the groove under the die cutting path can be filled with water to absorb the jet flow energy and reduce the cutting. In another embodiment, the vacuum The depth of the concave surface is 50 mils (0125 cm) and the width is 50 mils (0.125 cm), the depth of the grooves is 5 inches (3.75 cm) and the width is 200 mils (50 cm). This vacuum concave surface is connected to a pipe network (not shown) inside the holder, and the outside of the channel is connected to a vacuum pump via a valve and hose (not shown). In other embodiments, the special position and size of the appropriate die can be used as the vacuum concave surface and groove, or the vacuum concave surface and groove are not used. In another embodiment, the ' holder 300 is made of stainless steel (e.g., 44 ° C hardened stainless steel or 303 stainless steel). The holders of some embodiments are selected from low replacement costs (such as Ming, Ming alloy, glass, or equivalent) or have greater resistance to jet cutting (such as steel alloys, various non-scale steels, Jinjin, ceramics , And the like). In another embodiment, the anchor 300 has a bolt bottom half 31 and the positioning stoppers 304, 306, and 308 pass through its movable upper half 312 so that the direction of the upper half 312 of the anchor 300 can be accurate. Corresponds to the jet cutting system. In another embodiment, the holder 300 does not have an upper half or a bottom half, 512450 K 'n Α7

Μ--------^---------線 f靖先閱讀背面之沒音?事項再填寫本頁) 512450 A7 B7Μ -------- ^ --------- line f Jing first read the sound on the back? (Fill in this page again) 512 450 A7 B7

^--------^--------AWI (請先閱讀背面之注意事項再填寫本頁) M2450 1 r A7^ -------- ^ -------- AWI (Please read the notes on the back before filling this page) M2450 1 r A7

裝--------訂---------線—— (請先閱讀背面之注意事項再填寫本頁) 五、發明說明(13 ) =或以上之銷以及-個柵攔、或兩個栅欄。㈣在操作㈣ 令正式進行晶粒之切割動作。本方法結束於操作820 ,該 固定器從喷流㈣系統㈣並且晶㈣從固定器移開以進 行檢驗和清潔。如果該固定器具有上半部和下半部,則祗 有固定器之上半部和晶粒被從該系統移開,並且有定位止 動器之固定器的下半部仍夹著於固定於該系統内。如果需 要繼績切割另外之晶圓,則返回操作810之步驟。 第8圖顯示根據本發明之另一實施例從晶圓切割晶粒 之流程圖900。此方法之操作始於9〇2。然後在操作9〇4 中,固定器對準喷流切割系統之χ-軸和γ_軸而可準確從 晶圓上切割晶粒。然後在操作9〇6中,固定器之0對準喷 流切割系統之0而可準確從晶圓上切割晶粒。然後在操作 908中,將切割之線性速度和路徑程式化進入該喷流切割 系統中。接著為操作910,其將晶圓置入喷流切割系統上 之固定器内。然後在操作912中,喷流切割系統之可視校 準系統内的照像機移動到晶圓上第一個校準標誌。然後在 操作914中’將第一個校準標誌之坐標傳送至電腦。然後 在操作916中,該照像機移動到第二個校準標誌^然後在 操作918中’將第二個校準標誌之坐標傳送至電腦。然後 在操作920中,電膘計算χ、γ、和$從額定坐標之偏差。 然後在操作922中正式進行晶粒之切割動作。本方法結束Install -------- Order --------- Line—— (Please read the precautions on the back before filling out this page) V. Description of the invention (13) = or more sales and- Fence, or two fences. (In operation) Order to form the cutting operation of the die. The method ends at operation 820, where the holder is removed from the jet stream system and the wafer is removed from the holder for inspection and cleaning. If the fixture has an upper half and a lower half, the upper half of the fixture and the die are removed from the system, and the lower half of the fixture with the positioning stop is still sandwiched between the fixtures In the system. If it is necessary to continue cutting other wafers, the process returns to step 810. FIG. 8 shows a flowchart 900 of cutting a die from a wafer according to another embodiment of the present invention. The operation of this method starts at 902. Then in operation 904, the holder is aligned with the χ-axis and γ-axis of the jet cutting system to accurately cut the die from the wafer. Then in operation 906, the 0 of the holder is aligned with the 0 of the jet cutting system to accurately cut the die from the wafer. Then, in operation 908, the linear velocity and path of the cut are stylized into the jet cutting system. Next is operation 910, which places the wafer into a holder on a jet cutting system. Then in operation 912, the camera in the visual calibration system of the jet cutting system is moved to the first calibration mark on the wafer. The coordinates of the first calibration mark are then transmitted to the computer in operation 914 '. Then in operation 916, the camera is moved to the second calibration mark ^ and then in operation 918 ', the coordinates of the second calibration mark are transmitted to the computer. Then, in operation 920, the electrons calculate the deviations of χ, γ, and $ from the rated coordinates. Then, the operation of cutting the crystal grains is officially performed in operation 922. The method ends

本紙張尺度適用_國國家標準(CNS)A4規格⑵Gx 297公爱) 清潔。如果該固定器具有上半部和下半部,則祗有固定器 之上半部和晶粒從該系統移開,並且有定位止動器之固变 M2450This paper size applies _ National Standard (CNS) A4 size (Gx 297 public love) Clean. If the holder has an upper half and a lower half, the upper half of the holder and the die are removed from the system, and there is a solid deformation of the positioning stop M2450

五、發明說明( 14 器的下半部仍夾著固定於該系統内。如果需要繼續切割另 外之晶圓,則返回操作910之步驟。 晶粒以一種或以上之清潔液加以清潔,清潔液以含有 異丙醇(isopropyl alcohol)較佳。清洗切割後晶粒之殘渣的 商品級異丙醇和丙酮可購自任何的化學供應廠商。另外的 實施例利用其它的清潔液(例如,齒化烴類、烯類、或肥 皂和水)。 此處所舉實施例之實例僅供說明之用,而並非本發明 僅偏限於此。因此,亦可應用本領域内所熟知之技藝於其 它之實施例而不偏離下述本發明專利申請之範圍和精神。 ^ --------訂---------線 (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧財1-局員工消費合作社印製 適 度 尺 張 一紙 一本 格 規 A4 5) N (C 準 標 家 ¥!公 1297 1857V. Description of the invention (14 The lower half of the device is still clamped and fixed in the system. If it is necessary to continue cutting other wafers, return to the step of operation 910. The crystal grains are cleaned with one or more cleaning liquids, and the cleaning liquid It is preferred to contain isopropyl alcohol. Commercial grade isopropyl alcohol and acetone for cleaning the residues of the cut crystal grains can be purchased from any chemical supplier. Another embodiment utilizes other cleaning liquids (eg, toothed hydrocarbons) Type, olefin type, or soap and water). The examples of the embodiments described here are for illustrative purposes only, and the present invention is not limited to this. Therefore, the techniques known in the art can also be applied to other embodiments. Without departing from the scope and spirit of the patent application of the present invention described below. ^ -------- Order --------- Line (Please read the precautions on the back before filling this page} Ministry of Economy Wisdom Cai 1- Bureau employee consumer cooperative prints moderate ruler one paper one book standard A4 5) N (C quasi-standard house ¥! Public 1297 1857

Claims (1)

H3 第90124783號專利申請案 申請專利範圍修正本 (91年10月14曰) 1 · 一種k晶圓切割多個晶粒之方法,包括下列步驟: 將該晶圓置於固定器上; 對準該固定器内之該晶圓而使該多個晶粒暴露於 喷流切割嘴; 供應磨料至該喷流切割嘴; 供應加壓液體至該喷流切割嘴; 當該喷流切割嘴移動到該固定器上該晶圓之相對 位置時,以足夠切穿該晶圓之流速從該喷流切割嘴排出 混合該液體之磨料;以及 從該晶圓切割下多個晶粒之後,從該固定器取 多個晶粒。 ~ 2·如申請專利範圍第i項之方法,其中該多個晶粒包含多 個非矩形平面光波電路。 3. 如申請專利範圍第i項之方法,其中該液體為水,並且 該喷流切割嘴為一個喷水切割嘴。 經濟部中央標準局員工福利委員會印制衣 4. 如申明專利範圍第丨項之方法,其中該磨料包括至少一 種下列之材料··石榴石、撖欖石、金鋼砂、氧化鋁、矽 石、碳化鎢、碳化矽、以及金鋼鑽。 5·如申請專利範圍第丨項之方法,其中該磨料為選自平均 直徑從最小直徑〇·1微米至最大直徑200微米之粒子。 6·如申请專利範圍第丨項之方法,其中該液體加壓至最小 壓力為每平方英对2,000磅(no bar)至最大壓力為每平 91S56 512450 方英吋 100,000 磅(7,_ ba〇。 7 ·如申請專利範圍第1項夕古 、方法,其中該晶圓在切割前先 置於該固定器内,並且拉炙伽 H精夕個固定器止動器對準該固 8·如申請專利範圍第丨項之太、本 .^ 〇 貝之方法,其中該晶圓藉可視校準 系統以光學方式對準該喷流切割嘴。 9.如申請專利㈣1項之方法,其中該喷流切割嘴相對 於該晶圓之移動速度為最低每分鐘最高每分 鐘1 0 0英对。 10·—種從晶圓切割電路晶粒之方法, 曰,包括下列步驟: 將該晶圓置於噴水切割系統内的固定器上; 將該晶圓對準和定位對應噴水切割系統; 從磨料儲槽供應磨料至該噴水切割嘴; 從耦合至貯水槽之開口供應水至該喷水切割嘴; 當該喷水切割嘴移動到該晶圓之相對位置時,以足 夠切穿該晶圓之流速從該喷水切割嘴排出混合該水之 磨料;以及 經濟部中央標準局員工福利委員會印制衣 從邊晶圓切告J下多個晶粒之後,從該固定哭取出= 多個晶粒。 Λ 11 ·如申請專利範圍第10項之方法,其中對準該固6 气^ §§内 之該晶圓包含利用在該固定器上之多個物理構造1乂 _ 準該固定器内之該晶圓。 12.如申請專利範圍第1〇項之方法,進一步包括: 在該晶圓置於該固定器内之前進行一次或以 〆 上之 ‘ ^紙張尺度適用不國國家標準(CNSTT4規格(210 Χ297公釐- 切割之步驟 ^1^56 512450 13. 如申請專利 之該晶圓包含以肉眼檢查在 -口… 誌。 χ日日圓上之多個校準標 14. 如申請專利範圍第1〇項之方法,進—步包括: 在該多個晶粒從晶圓切割 ^ 之步驟。 卜之傻π洗该多個晶粒 15. 如申請專利範圍第1()項之方法,進—步包括: 移動該噴水切割嘴之第一個χ-軸和γ_轴參 以對應該晶圓之第二個X-軸參考坐標之步驟。 16. 如申請專利範圍第1〇項之方法,進一步包括: 。移動該噴水切割嘴之第一㈣參考坐標以對應該 日日圓之第二個0參考坐標之步驟。 17. 如申請專利範圍第1〇項之方法,進一步包括: 设定該喷水切割嘴相對於該晶圓之移動的線性速 度和路徑之步驟。 18. -種用以對準在喷流切割系統内具有兩條或以上直緣 之晶圓切片的固定器,包括·· 經濟部中央標準局員工福利委員會印製 多個嚙合該兩條或以上直緣之構造,以對準在該固 定器内之該晶圓切片。 19·如申請專利範圍第18項之固定器,其中該固定器之材 料為選自由鋁、鋁合金、鋼合金、鈦合金、陶瓷、以及 玻璃所組成之組群。H3 No. 90124783 Patent Application Amendment to Patent Scope (October 14, 91) 1. A method for cutting multiple dies from a k-wafer, including the following steps: placing the wafer on a holder; aligning The wafer in the holder exposes the plurality of dies to a jet cutting nozzle; supplies abrasive to the jet cutting nozzle; supplies pressurized liquid to the jet cutting nozzle; when the jet cutting nozzle moves to The relative position of the wafer on the holder is to discharge the abrasive mixed with the liquid from the jet cutting nozzle at a flow rate sufficient to cut through the wafer; and after cutting a plurality of dies from the wafer, the wafer is removed from the holder. The device takes multiple grains. ~ 2. The method according to item i in the patent application range, wherein the plurality of crystal grains include a plurality of non-rectangular planar lightwave circuits. 3. The method according to item i of the patent application, wherein the liquid is water and the jet cutting nozzle is a water jet cutting nozzle. Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs 4. If the method of claiming the scope of the patent is declared, the abrasive includes at least one of the following materials: , Tungsten carbide, silicon carbide, and gold steel drills. 5. The method according to item 1 of the patent application range, wherein the abrasive is a particle selected from an average diameter from a minimum diameter of 0.1 micron to a maximum diameter of 200 micron. 6. The method according to item 丨 of the patent application range, wherein the liquid is pressurized to a minimum pressure of 2,000 pounds per square inch (no bar) to a maximum pressure of 91S56 512450 square inches per square inch (7, _ ba. 7 · If the patent application scope item 1 Xigu, method, where the wafer is placed in the holder before slicing, and pull the fixed position of the holder to align with the holder 8 · 如The method of applying patent No. 丨 of the scope of this article, the method of ^ ^ 0, wherein the wafer is optically aligned with the jet cutting nozzle by a visual calibration system. 9. If the method of the patent No. 1 application, the jet The moving speed of the cutting nozzle with respect to the wafer is the lowest per minute and the highest 100 British pairs per minute. 10 · —A method for cutting a circuit die from a wafer, including the following steps: The wafer is placed in a water spray On the holder in the cutting system; aligning and positioning the wafer corresponding to the water jet cutting system; supplying abrasive from the abrasive storage tank to the water jet cutting nozzle; supplying water from the opening coupled to the water tank to the water jet cutting nozzle; when The water jet cutting tip moves When the relative position of the wafer is reached, the abrasive mixed with the water is discharged from the water jet cutting nozzle at a flow rate sufficient to cut through the wafer; After placing multiple dies, take out from the fixed cry = multiple dies. Λ 11 · The method of item 10 of the scope of patent application, wherein the wafer within the aligning ^ § § includes the use of the wafer The plurality of physical structures on the holder 1 __ identify the wafer in the holder. 12. The method according to item 10 of the patent application scope, further comprising: performing one time before the wafer is placed in the holder. Or use the above ^ paper size to comply with national standards (CNSTT4 specifications (210 x 297 mm-cutting step ^ 1 ^ 56 512450) 13. If the patent application for the wafer contains a visual inspection of the-mouth ... Multiple calibration standards on the Japanese yen 14. The method of item 10 of the patent application scope, further comprising: the step of cutting the plurality of dies from the wafer ^ The silly cleaning of the plurality of dies粒 15. Party 1 () in the scope of patent application The further steps include: the step of moving the first χ-axis and γ-axis parameters of the water jet cutting nozzle to correspond to the second X-axis reference coordinates of the wafer. The method further includes: a step of moving a first reference coordinate of the water jet cutting nozzle to correspond to a second zero reference coordinate of the Japanese yen. 17. The method of claim 10 in the patent application scope further includes: A step of determining the linear velocity and path of the water jet cutting nozzle relative to the movement of the wafer 18. 18. A holder for aligning a wafer slice having two or more straight edges in a jet cutting system, Includes: The Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs prints a number of structures that engage the two or more straight edges to align the wafer slices in the holder. 19. The holder of claim 18, wherein the material of the holder is selected from the group consisting of aluminum, aluminum alloy, steel alloy, titanium alloy, ceramic, and glass. 2〇·如申請專利範圍第18項之固定器,進一步包括多個可 握持該晶圓切片之真空凹面以及連接至該多個真空凹 面的管道,其中該管道可連接至外部的真空源。 ‘張尺度適用中國國家標準(CNS) Α4規格(210 Χ 297公釐)一 91856 1 ’如申凊專利範圍第1 8項之15] A „ 、 槽,其中該溝槽位於該晶’進-步包括多個溝 用於切割兮sn+ y 刀片之下並且可握持能吸收 22如… 片之喷流動能的液體。 •如申印專利範圍裳 TF Η η ^ 、固定器,進一步包括可移動 員4 U包含從晶圓切片切 切宝ιΙ έ ϋ α σ下之日日粒,以及仍和該喷流 切割糸統栓接之底部。 23:=:]?圍第22項之固定器,進-步包括在該底 止動=止動器,該多個晶圓切片定位 出牙過該可移動頂部中之多個開口以對準該 晶圓切片。 认一種切割晶圓之晶圓晶粒切割系統,包括: 對準和固定該晶圓之固定器; •嘴以足夠切牙该晶圓之流速朝向該晶圓排出 液體和磨料; 液體供應源,供應該液體至該切割嘴; 磨料ί、應源,供應該磨料至該切割嘴;以及 機械裝置,移動該切割嘴至該晶圓之相對位置。 經濟部中央標準局員工福利委員會印製 25. 如申請專利範圍第24項之晶圓晶粒切割系統,進一步 包括校準系統’以使該切割嘴之移動對準在該晶圓上之 該晶圓晶粒的校準位置。 26. 如申請專利範圍第25項之晶圓晶粒切割系統,進一步 包括一台或以上之照像機,以找出在該晶圓上之多個校 準標誌而使該切割嘴之移動對準在該晶圓上之該晶圓 晶粒的校準位置。 三7·如申請專利範圍第25項之晶圓晶粒切割系統,進一步 令紙張尺度適用中國國家標準(CNS) Α4規袼(210 X 297公釐) 91856 512450 包括: 一台或以上之照像機,以找出在該晶圓上之多個校 準標諸; 十字準線產生機,以產生十字準線而覆蓋該多個校 準標誌之一校準標誌; 一台或多個電視監視器,以對準該十字準線產生機 之十字準線而覆蓋從該多個校準標誌之一校準標誌;以 及 一種移動該切割嘴的裝置,在校準該晶圓晶粒切割 系統之多個坐標至該晶圓上該晶圓晶粒之多個坐標後 開始操作。 28. 如申請專利範圍第24項之晶圓晶粒切割系統,其中該 磨料為選自平均直徑從最小直徑〇丨微米至最大直徑 1〇〇微米之粒子。 29. 如申請專利範圍第24項之晶圓晶粒切割系統,其中該 磨料為選自由石榴石、撖欖石、金鋼砂、氧化鋁、矽石、 石反化鶴、碳化;&夕、以及金鋼鑽所組成之組群。 經濟部中央標準局員Η福利委員會印製 30·如申請專利範圍第24項之晶圓晶粒切割系統,其中該 液體為水,加壓至最小壓力為每平方英忖2, 〇〇〇碎(130 bar)至最大壓力為每平方英吋1〇〇, 〇〇〇磅(7, 〇〇〇 bar)。 本紙張尺度適用中國國(CNS) A4規格(210 X 297公Ϊ7 9185620. The holder of claim 18, further comprising a plurality of vacuum concave surfaces capable of holding the wafer slice and a pipe connected to the plurality of vacuum concave surfaces, wherein the pipe can be connected to an external vacuum source. 'Zhang scale applies Chinese National Standard (CNS) A4 specification (210 x 297 mm)-91856 1' If you apply for the patent scope No. 18 of 15] A, groove, where the groove is located in the crystal 'in- The steps include multiple grooves for cutting under the sn + y blade and can hold a liquid that can absorb the spraying energy of 22 pieces such as ... • Such as the application for the patent scope TF Η η ^, a holder, and further including a movable Member 4U contains the iris grains cut from the wafer slice, and the bottom part still bolted to the jet cutting system. 23: =:]? The holder around item 22, -The step includes at the bottom stop = stop, the plurality of wafer slices are positioned through a plurality of openings in the movable top to align the wafer slices. The system includes: a holder for aligning and fixing the wafer; a nozzle ejecting liquid and abrasive material toward the wafer at a flow rate sufficient to incisive the wafer; a liquid supply source for supplying the liquid to the cutting nozzle; abrasive material, Ying Yuan, supplying the abrasive to the cutting nozzle; and mechanical devices, Move the cutting nozzle to the relative position of the wafer. Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs. 25. If the patent application scope of the wafer die cutting system is 24, it further includes a calibration system to make the cutting nozzle Move the alignment position of the wafer die aligned on the wafer. 26. For example, the wafer die cutting system with the scope of patent application No. 25, further includes one or more cameras to find The multiple calibration marks on the wafer align the movement of the cutting nozzle with the calibration position of the wafer die on the wafer. 37. The wafer die cutting system such as the 25th in the scope of patent application , Further making the paper size applicable to the Chinese National Standard (CNS) A4 Regulation (210 X 297 mm) 91856 512450 including: one or more cameras to find multiple calibration standards on the wafer; A crosshair generator to produce a crosshair to cover one of the calibration marks; one or more television monitors to align the crosshair of the crosshair generator to cover the multiple School One of the marks is a calibration mark; and a device for moving the cutting nozzle, which starts operation after calibrating multiple coordinates of the wafer die cutting system to multiple coordinates of the wafer die on the wafer. 28. If applying The wafer dicing system of item 24 of the patent scope, wherein the abrasive is a particle selected from an average diameter from a minimum diameter of 100 microns to a maximum diameter of 100 microns. The grain cutting system, wherein the abrasive material is selected from the group consisting of garnet, mullite, gangue, alumina, silica, stone-reversing crane, carbonization & diamond, and diamond. Printed by a member of the Central Standards Bureau of the Ministry of Economic Affairs and the Welfare Committee. 30. For example, the wafer die cutting system for patent application No. 24, where the liquid is water and pressurized to a minimum pressure of 2,000 pieces per square inch ( 130 bar) to a maximum pressure of 10,000 pounds per square inch (7,000 bar). This paper size is applicable to China (CNS) A4 size (210 X 297 cm 7 91856
TW90124783A 2000-10-20 2001-10-08 Apparatus and method to dice integrated circuits from a wafer using a pressurized jet TW512450B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69334700A 2000-10-20 2000-10-20
US09/874,950 US6705925B1 (en) 2000-10-20 2001-06-05 Apparatus and method to dice integrated circuits from a wafer using a pressurized jet

Publications (1)

Publication Number Publication Date
TW512450B true TW512450B (en) 2002-12-01

Family

ID=27105153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW90124783A TW512450B (en) 2000-10-20 2001-10-08 Apparatus and method to dice integrated circuits from a wafer using a pressurized jet

Country Status (3)

Country Link
AU (1) AU2001276882A1 (en)
TW (1) TW512450B (en)
WO (1) WO2002035585A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1873824B1 (en) * 2002-09-13 2009-03-11 Towa-Intercon Technology, Inc. Jet singulation of a substrate
TW200406026A (en) * 2002-09-13 2004-04-16 Intercon Technology Inc Jet singulation
US7153186B2 (en) 2002-09-13 2006-12-26 Towa Intercon Technology, Inc. Jet singulation
SG111091A1 (en) * 2002-10-29 2005-05-30 Advanced Systems Automation Handler for semiconductor singulation and method therefor
US7094633B2 (en) * 2003-06-23 2006-08-22 Sandisk Corporation Method for efficiently producing removable peripheral cards
AT518176B1 (en) * 2016-06-09 2017-08-15 Steger Heinrich Method for operating a CNC machine

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778935A (en) * 1972-01-26 1973-12-18 Pennwalt Corp Abrading apparatus with rotary index table
JPS61159740A (en) * 1984-10-25 1986-07-19 タンデム コンピユ−タ−ズ インコ−ポレ−テツド Miniaturization of wafer
US4893440A (en) * 1986-05-01 1990-01-16 Airsonics License Partnership Abrasive jet machining
US5160403A (en) * 1991-08-09 1992-11-03 Xerox Corporation Precision diced aligning surfaces for devices such as ink jet printheads
US5962862A (en) * 1997-08-12 1999-10-05 Micron Technology, Inc. Method and apparatus for verifying the presence or absence of a component

Also Published As

Publication number Publication date
AU2001276882A1 (en) 2002-05-06
WO2002035585A1 (en) 2002-05-02

Similar Documents

Publication Publication Date Title
US6705925B1 (en) Apparatus and method to dice integrated circuits from a wafer using a pressurized jet
KR970005944B1 (en) Apparatus & method of automatically separating stacked wafers
TW445499B (en) Cleaning apparatus
US10981250B2 (en) Wafer producing apparatus
US7005317B2 (en) Controlled fracture substrate singulation
EP1537601B1 (en) Jet singulation of a substrate
KR102591736B1 (en) Peeling apparatus
JP5707889B2 (en) Semiconductor substrate cutting method and semiconductor substrate cutting apparatus
TWI564948B (en) Hard and brittle materials for grinding, grinding processing systems and grinding, grinding methods
US20030092364A1 (en) Abrasive fluid jet cutting composition, method and apparatus
KR20190063387A (en) Peeling apparatus
WO2007108194A1 (en) Abrasive water-jet type cutting apparatus
TW512450B (en) Apparatus and method to dice integrated circuits from a wafer using a pressurized jet
KR20090078647A (en) Conditioner for chemical mechanical planarization pad.
KR20140121779A (en) Method for dividing circular plate-like object
TW201813755A (en) Wafer processing method
JP2019204916A (en) Chuck table
US20060180579A1 (en) Multidirectional cutting chuck
JPH10209086A (en) Breaking method for plate-shaped work and its equipment
Yuan et al. Waterjet cutting of cross‐linked glass
TWI225472B (en) Process for working a quartz glass component
JP5254733B2 (en) Water jet machining method
JP2004356357A (en) Cutting method
JP2006187829A (en) High-pressure liquid jet type cutting device and high-pressure liquid jet type cutting method
JP2013219200A (en) Cutting device