505972 ___—案就 89103920 年月日 修正 五、發明說明（1) 石夕晶片（silicon wafer)為晶體（cryStal)結構，一些 物理參數和特性上的表現，深受其晶格方向的影響。其常 用微機電系統（Micro Electro-Mechanical System)中的 塊狀微機械加工（bulk micro machining)或波導通道的結 構。在選取晶面做非等向性餘刻（aniS〇tr〇pic etch 1 ng)時，其蝕刻溶液反應在蝕刻速率上和矽晶片的晶 格方向有很大的關係，因此在做非等向性溼式蝕刻前，^ 準地決定出石夕晶片的晶格方向，以得到精確的蝕刻处 成為相當重要的工作。 、口霉 如圖所示之矽材晶片，透過主切割道（primary flat)和第二切割道（sec〇ndary flat)，可得知<11〇〉晶格 方向。但是在矽晶片製造廠的規格書上指出，切割道與實 際的晶格方向存在有丨。的誤差，這誤差對日益縮小尺寸、 的微機電系統應用來說，是不能接受的。為增加對準晶格 方向的精確度，前置蝕刻（Pre —etching)的方法被廣為應 用。該方法是利用非等向性溼式蝕刻的特性，透過特殊的 刖置蝕刻光罩圖案（pre — etching mask pattern)設計，先 對矽晶片蝕刻適當的時間，藉由觀察蝕刻出的結構，決定 =晶片的晶格方向。由於此方法是在做正式蝕刻元件結構 =所作的蝕刻動作，所以被稱為前置蝕刻。一般所使用的 前置蝕刻光罩圖案所面臨的問題有占面積太大、解析度不 局、和不易觀察的缺點，為改善上述的缺點，而有本 的提出。505972 ___— The case was amended on the day of 89103920 V. Description of the invention (1) The silicon wafer is a cryStal structure, and some physical parameters and performance are deeply affected by its lattice direction. It often uses bulk micro machining or waveguide structure in Micro Electro-Mechanical System. When the crystal plane is selected as an anisotropic etching (aniStropic etch 1 ng), the etching solution reaction has a great relationship with the crystal lattice direction of the silicon wafer, so it is doing anisotropic. Before the wet etching, it is important to determine the crystal lattice direction of the Shixi wafer accurately to obtain an accurate etching position. Mouth mold The silicon wafer as shown in the figure can be obtained through the primary scribe line (secondary flat) and the second scribe line (seconary flat). However, the silicon wafer manufacturer's specification states that there are scribe lines and actual lattice directions. This error is unacceptable for MEMS applications that are shrinking in size and size. In order to increase the accuracy of aligning the lattice direction, a pre-etching method is widely used. This method uses the characteristics of anisotropic wet etching, and through a special pre-etching mask pattern design, the silicon wafer is etched for an appropriate time first, and the structure is determined by observing the etched structure. = Lattice direction of the wafer. This method is called pre-etching because it is an etching operation that is performed by a formal etching device structure. The problems of the front-etching mask pattern generally used are that they occupy too much area, the resolution is not good, and the disadvantages are not easy to observe. In order to improve the above-mentioned disadvantages, this problem has been proposed.
刈5972 ~___塞號89103920_年 月 日 修蔓__ 五、發明說明（2) 所設計之前置|虫刻光罩圖案主要是由一連串的四邊形 所構成，如圖二如示，四邊形11、1 2、1 3、1 8、和1 9分別 具有兩短邊及兩長邊且以一定的間隔排列成一排。如果以 四邊形11為中心，其邊11 1和11 2對準石夕晶片切割道，即廠 商所提供之[11 〇 ]晶格方向，在四邊形1 1的右邊，四邊形 1 2的邊1 2 2將平行於邊111，而邊1 2 1將相對於邊1 2 2的逆時 針方向傾斜一固定角度，即角3 2，該固定角度為所欲辨識 晶格方向角度之最小解析度的二倍。由於邊丨2 2和邊1 21平 行’所以角3 2和角3 3所夾之角度相同。依照同樣的規則， 四邊形13的邊132將平行於邊121，而邊131將相對於邊131 的逆時針方向傾斜剛才所設之固定角度。如此，邊丨31和 切咅’]道即存在二倍的固定角度，即角34為兩倍的角32，且 角3 4等於角3 5。同樣的規則繼續下去，直到某個四邊形的 一邊和切割道間的夾角為實際[丨丨〇 ]晶格方向在逆時針方 向可能偏移最大角度的兩倍。 基於對稱的原則，在四邊形11的左邊，四邊形丨8的、真 1 81將平行於邊1 12，邊182將相對於邊181的順時針方、义 斜一所設定之固定角度，角42 ;四邊形19的邊191將平'傾 於邊182，所以角42和角43所夾之角相同。邊192將订 邊1 9 1的順時針方向傾斜所設之固定角度。如此，〇士於 切割迢即存在二倍的固定角度，即角44為兩倍的角4 2和 此的四邊形重覆下去，直到某個四邊形的一邊和切L如 的夾角為晶格方向在順時針方向可能偏移 二遏間 或兩倍以上之角度。 内度的兩倍刈 5972 ~ ___ plug No. 89103920_year, month and day repair __ V. Description of the invention (2) The pre-designed | insect engraved mask pattern is mainly composed of a series of quadrilaterals, as shown in Figure 2. 11, 1 2, 1 3, 1 8 and 19 have two short sides and two long sides respectively and are arranged in a row at a certain interval. If the quadrilateral 11 is centered, its edges 11 1 and 11 2 are aligned with the Shixi wafer cutting path, that is, the [11 〇] lattice direction provided by the manufacturer is on the right side of the quadrilateral 1 1 and the side 1 2 2 Will be parallel to edge 111, and edge 1 2 1 will be tilted counterclockwise with respect to edge 1 2 2 by a fixed angle, namely angle 3 2, which is twice the minimum resolution of the desired lattice direction angle . Since side 2 2 and side 1 21 are parallel ', the angle between the corner 3 2 and the corner 3 3 is the same. According to the same rule, the side 132 of the quadrilateral 13 will be parallel to the side 121, and the side 131 will be inclined counterclockwise with respect to the side 131 at the fixed angle just set. In this way, there are two fixed angles of the edge 31 and the cut channel], that is, the angle 34 is twice the angle 32, and the angle 3 4 is equal to the angle 3 5. The same rule continues until the angle between one side of a quadrilateral and the cutting path is twice the maximum angle that the actual [丨 丨 〇] lattice direction may shift in the counterclockwise direction. Based on the principle of symmetry, on the left side of the quadrilateral 11, the quadrilateral 丨 8, the true 1 81 will be parallel to the side 1 12, and the side 182 will be a fixed angle, angle 42 set clockwise with respect to the side 181, angle 42; The side 191 of the quadrilateral 19 will be flattened to the side 182, so the angle between the angle 42 and the angle 43 is the same. The side 192 will be tilted by the fixed angle set by side 1 9 1 clockwise. In this way, there is a two-fold fixed angle in the cutting angle, that is, the angle 44 is twice the angle 4 2 and the quadrangle repeats until the angle between the side of a quadrilateral and the angle L is in the lattice direction. Clockwise may be offset by an angle of two or more times. Double degree
第6頁 505972 — ——_案號 8910f!Q9^ 五、發明說明（3) 實際設計時，由於士 著1。的誤差，若我們所1割道曰和實際Π 10]晶格方向存在 設定傾斜之固定角度為〇項之晶格對準精度為0 · 01。，可 邊傾斜角之分布，以〇 2 ’則共有2 0 0個四邊形，其 針方向）；同時亦有另外^為解析度，從0。至2。（逆時 從0。至-2。（順時針方向)〇0個四邊形，其邊之傾斜角分布 在應用此前置麵刻. 向和切割道間的偏差時卓圖案決定矽晶片[11 0]晶格方 層，該保護層之作用為讓I待測之矽晶片上成長保言I 時可以避免矽晶片被蝕刻。觸非等向性溼式蝕刻 護層製程，將前述之前置钱二=二常用之黃光及去保 備妥之矽晶片如圖三所示。^先罩圖案成形在矽晶片上， 層覆蓋處，即戶斤設計之〔、中的四邊形11到2 3為無保護 為保護層所覆蓋。…刻光罩圖案，·其餘的石夕晶片 將備妥之石夕晶片浸泡於非、 過適當的蝕刻時間，於矽s ’二二屋式蝕刻溶液中，矣 成如圖四所示的幾何形狀曰:由於刻圖案將被㈣ 性溼式蝕刻溶液其對<lu>方 又4石夕晶片的非等卢 以在矽晶片上沒有被保i g 餘刻迷率近似於零，所 <iio> m二/ 邊形圖案將被蝕刻到由 <110〉日曰格方向所圍成之長方形。圖四 由 實際[UG]晶格方向對準四邊形 片之 到23的長邊與實際[110]晶格 ：：因為四邊形12 7仔在偏i，經過非等向 505972 案號 89103920 月 曰 五、發明說明（4) 性溼式敍刻將產生所謂的過度餘刻（u n d e r c u t 〇 r u n d e r etching)現象，即三角形311到332的形成，而使四邊形12 到2 3的邊被限制在< 11 〇 >的方向上。由於三角形的面積隨 四邊形長邊與實際[11 〇 ]晶格方向間的偏差角度加大而加 大’因此相鄰兩個四邊形間的區域將因偏差角度的加大而 減少。如圖四中，四邊形12和13間的區域212和四邊形14 和1 5間的區域2 1 3相較，區域2 1 3較2 1 2面積小得多，由此 可知四邊形14和15的邊，其和[110]晶格方向偏差的角度 較大。如此的原理，將在蝕刻後的前置蝕刻光罩圖案中找 到相鄰兩四邊形間區域面積剛好為零的區域，如圖四中的 广218，其面積為零’為一條線。而在介於區域 j4和218間’由兩兩四邊形所形成的區域，其面積都 :到【LTf們使用顯微鏡來觀察，將非常容易辨別。在 ^ ^ ^ ^ 割道間的偏差。又‘、1際[11〇]晶格方向和矽晶片上切 經由實驗的驗證，本方法可 面積下，從事高精確度的晶格方=牲矽晶片可使用的 用。由於二=:::機！f、統之相關產業人士所應 凡習有專長的人均可；過=作及設計原理’ 查委員能詳予審查，並能二“專利申請。尚祈貴審 505972 案號89103920 年月日 修正 圖式簡單說明 圖式之簡單說明： 第一圖矽晶片之切割道和晶格方向關係示意圖。 第二圖本發明之前置蝕刻光罩圖案示意圖。 第三圖矽晶片上之前置蝕刻光罩圖案。 第四圖矽晶片上之前置蝕刻光罩圖案經前置蝕刻後所呈 現之圖案。 元件符號說明： 四邊形11 四邊形1 2 四邊形1 3 四邊形1 8 四邊形1 9 四邊形14、 角 32、 三角形3 11 319 327 區域 211 22 〜23 44 〜316 ^ 317 > 318 、324 、 325 、 326 ^ 332 〜216〜217〜218 邊 111 、 112 邊 121 、 122 邊 131 、 132 邊 181 、 182 邊 191 、 192 15 〜16 > 17 ' 20 〜21 ， 33 、 34 、 35 、 42 、 43 、 、312 、 313 、 314 、 315 > 320 ^ 321 > 322 〜323 〜328 > 329 > 330 ^ 331 、212 、 213 、 214 、 215Page 6 505972 — ——_ Case No. 8910f! Q9 ^ V. Description of the invention (3) In the actual design, the author 1 If the deviation of the grid is 1 and the actual direction is 10, the lattice alignment accuracy is set to a fixed angle of 0, and the precision of the lattice is 0 · 01. The distribution of the inclination angle can be 200 squares with a total of 200 quadrilaterals (the needle direction); at the same time, there is another resolution from 0. To 2. (Counter-clockwise from 0. to -2. (Clockwise) 0 quadrilaterals whose inclination angles are distributed on the front face engraved. The deviation between the direction and the cutting path determines the silicon wafer [11 0 ] Lattice square layer, the protective layer's function is to allow the silicon wafer to be grown on I to be tested. I can prevent the silicon wafer from being etched when I is in contact. The non-isotropic wet etching protective coating process will deposit the previous money. Two = two commonly used yellow light and deprotected silicon wafers are shown in Figure 3. ^ The mask pattern is formed on the silicon wafer, and the layer cover is the quadrangular 11 to 2 3 designed by the household catwalk as No protection is covered by the protective layer .... engraved with a mask pattern, the remaining Shi Xi wafers will be prepared by immersing the prepared Shi Xi wafers in a non-existent, appropriate etching time in a silicon s' two or two house etching solution, 矣As shown in Figure 4, the geometric shape is as follows: Because the engraved pattern will be etched with a wet etching solution, its non-equivalence to the Fang You 4 Shi Xi wafer is not protected on the silicon wafer. The rate is close to zero, so the < iio > m / square pattern will be etched to be surrounded by the direction of < 110〉 The square is shown in Figure 4. The actual [UG] lattice direction is aligned with the long side of the quadrilateral piece to 23 and the actual [110] lattice :: Because the quadrilateral 12 7 is at i, passing through the non-isotropic 505972 Case No. 89103920 V. Description of the invention (4) Sexual wet engraving will produce the so-called undercutting or underetching phenomenon, that is, the formation of triangles 311 to 332, and the sides of the quadrilaterals 12 to 23 are limited to <11 〇 >. As the area of the triangle increases with the deviation angle between the long side of the quadrilateral and the actual [11 〇] lattice direction, the area between two adjacent quadrilaterals will increase because of the deviation angle. As shown in Figure 4, the area 212 between the quadrilaterals 12 and 13 and the area 2 1 3 between the quadrilaterals 14 and 15 are much smaller. The area 2 1 3 is much smaller than the area 2 2 2. 15 sides, which has a large deviation from the [110] lattice direction. Such a principle will find the area between the adjacent two quadrilaterals in the pre-etched mask pattern after the etching is just zero, as shown in the figure. Guangzhong 218 in the middle of four, whose area is zero 'is a line . And in the area formed by two quadrilaterals between the areas j4 and 218, their areas are all: to [LTf who use a microscope to observe, it will be very easy to distinguish. The deviation between the ^ ^ ^ cuts. Again ', 1 [1〇] lattice direction and silicon wafer up-cut through experimental verification, this method can be used in the area of high precision lattice square = silicon wafer can be used. Since two = ::: Machines! F. All relevant industry professionals should be able to apply to anyone who has expertise in the industry; inspection and design principles can be examined by the inspectors in detail, and "patent applications." Thank you for your trial 505972 Case No. 89103920 Date Modification Brief description of the diagram Brief description of the diagram: The first diagram shows the relationship between the cutting path and the lattice direction of the silicon wafer. FIG. 2 is a schematic diagram of a front etching mask pattern of the present invention. The third figure is a front etching mask pattern on a silicon wafer. The fourth figure shows the pattern of the front etching mask pattern on the silicon wafer after pre-etching. Element symbol description: Quadrilateral 11 Quadrilateral 1 2 Quadrilateral 1 3 Quadrilateral 1 8 Quadrilateral 1 9 Quadrilateral 14, Corner 32, Triangle 3 11 319 327 Area 211 22 to 23 44 to 316 ^ 317 > 318, 324, 325, 326 ^ 332 ~ 216 ~ 217 ~ 218 Side 111, 112 Side 121, 122 Side 131, 132 Side 181, 182 Side 191, 192 15 ~ 16 > 17 '20 to 21, 33, 34, 35, 42, 43, 43, 312, 313, 314, 315 > 320 ^ 321 > 322 to 323 to 328 > 329 > 330 ^ 331, 212, 213, 214, 215
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