504844 A7 B7 五、發明説明（彳) 〔發明之背景〕 本發明係有關形成抗蝕膜於例如液晶顯示器（L C D )用玻璃基板或半導體晶圓等之基板表面後，要進行去除 部分之抗蝕膜或予以乾燥等之處理的處理裝置及其處理方 法者。 例如在製造L CD時，會塗佈（塗敷）光致抗難劑（ 光阻劑）液於玻璃製之矩形L C D基板來形成抗蝕膜，而 以對應於電路圖案來曝光抗飩（劑）膜並將其進行顯像處 理之所謂以照像平版印刷術（又稱光刻法）來形成所定之 圖案。 而形成如此之電路圖案，係以使用匯集複數之處理單 元之抗蝕劑塗佈•·顯像系統來實施。於如此之系統，乃首 先，對於基板以伴隨著所需要而由照射紫外線來進行表面 改變性質、洗淨處理之後，由洗淨單元來實施刷洗洗淨及 超音波水之洗淨。而後，爲了增進抗蝕劑之穩定性，基板 會於黏著處理單元實施疏水化處理（HMDS處理），接 著在抗蝕劑塗佈處理單元進行抗蝕劑塗佈。對於以如此來 形成抗蝕膜之基板，將依序實施由加熱單元所實施之預烘 乾、曝光裝置未曝光所定之圖案，在顯像處理單元之顯像 處理，在加熱單元之後烘乾處理，以形成所定之電路圖案 於基板。 將詳細地說明有關從塗佈抗蝕劑直至預烘乾前爲止之 處理過程。首先，將被實施疎水處理之基板予以保持吸著 於可水平旋轉之旋轉夾頭，並從上部供應抗蝕劑後，旋轉 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4- 504844 A7 B7 五、發明説明（2 ) (請先閲讀背面之注意事項再填寫本頁) 基板，則抗蝕劑會由離心力擴散而形成膜狀於基板上。以 如此之方法來塗佈抗蝕劑時，剛塗佈後之抗蝕膜厚度雖爲 均勻，惟在停止旋轉不產生離心力作用後，或伴隨著時間 的經過，會由表面張力之影響而使抗蝕劑在基板邊緣部形 成隆起而變厚。又在如此之旋轉方式之塗佈時，所甩開之 抗蝕會繞入於基板背面並附著。 由於被形成於基板周（邊）緣部之不均勻厚度之膜或 附著於背面之抗蝕劑，會在其後之基板搬運之過程等成爲 產生粒子之原因，又也會成爲污染搬運基板用之裝置的原 因，因而，傳統上（以往）對於去除（清除）該等抗蝕劑 乃由吐出稀釋劑等之處理液於所定位置來實施，而後，基 板會被輸送至預烘乾處理。 〔發明之槪要〕 經濟部智慧財產局員工消費合作社印製 當使用上述之從形成抗蝕（劑）膜直至淸除（去除） 預烘乾前之基板周緣及背面之抗蝕劑爲止之過程時，會在 其後對於基板進行預烘乾處理等，或基板被曝光而實施顯 像處理時。與支承基板用之固定銷或要升降基板用之提升 銷等之接觸痕劑，有可能在預烘乾處理等之加熱處理時會 轉印（複印）於基板之情事。 又吐出、供應稀釋劑等之處理液乙事，以往係使用可 沿著基板周（邊）緣移動之管嘴之機構來進行，然而，該 狀態時，因需要花費掃描管嘴之時，使得每一基板之處理 時間會變爲長，其結果，具有包括其他過程之所需要之時 -5- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 504844 A7 B7 五、發明説明（3 ) 間（Tact time，生產節拍時間）會成爲長時間化之問題。 (請先閲讀背面之注意事項再填寫本頁) 本發明係鑑於上述如此之情事而發明者。其目的係擬 提供一種可防止對於基板產生轉印及可縮端生產節拍時間 之處理裝置及其處理方法者。 爲了解決上述課題，本案申請人曾在日本國專利特願 平 10 — 233599 號，同 10 — 369306 號，揭 示成一列配置要塗佈抗蝕劑於基板的抗蝕劑塗佈處理單元 ，和真空乾燥形成有抗蝕（劑）膜之基板的真空乾燥單元 及從真空乾燥後之基板淸除周緣部之抗蝕劑用的周緣抗餽 劑淸除單元之處理裝置。 然而，如此之分別配設抗飩劑塗佈處理單元、真空乾 燥單元、周緣抗蝕劑淸除單元之結構時，因各單元所佔有 之空間會成爲廣闊，使得具有裝置變成大型化之問題。又 對於周緣抗蝕劑淸除單元，因使用著掃描管嘴之型式者， 爲此，被期盼能縮短生產節拍時間。 經濟部智慧財產局員工消費合作社印製 本發明除了前述課題之外，也要解決如此之新問題者 ，第1之發明係擬提供一種要處理塗佈有抗蝕劑之基板的 裝置，其特徵爲：以保持形成有抗蝕（劑）膜之基板於所 定位置的狀態下，進行基板之真空乾燥及淸除基板周（邊 )緣部之抗蝕劑。 第2之發明係擬提供一種塗佈抗蝕劑於基板，並對於 所形成之抗蝕膜實施加熱處理前之乾燥處理的處理裝置， 其特徵爲具備有：要塗佈抗蝕劑於基板之抗飩劑塗佈處理 單元，及要實施真空乾燥形成有抗蝕膜之基板及要進行淸 本紙張尺度適用中關家標準（CNS ) A4iUM 210X297公釐)I "" 504844 A7 B7 五、發明説明（4 ) 除前述基板周緣部之抗蝕劑的真空乾燥/周緣抗蝕劑淸除 單元。 (請先閲讀背面之注意事項再填寫本頁) 第3之發明係擬提供一種塗佈有抗蝕劑之基板的處理 裝置，其特徵爲具備有：具有要載置前述基板用之台的（ 處理）室；要減壓前述室內用的排氣機構；及要在前述室 內進行淸除（去除）前述基板周緣部之抗蝕劑的周緣抗蝕 劑淸除機構。 第4之發明係擬提供一種處理裝置，其特徵爲：具備 有要塗佈抗鈾劑於基板之抗蝕劑塗佈處理單元，及對於塗 佈抗鈾劑後之基板實施後處理之後處理單元，而前述後處 理單元乃具備有：要載置基板於內部之（處理）室；要減 壓前述室內的排氣機構；及在前述室內要進行淸除前述基 板周緣部之抗蝕劑的周緣抗蝕劑淸除機構。 經濟部智慧財產局員工消費合作社印製 在於該等本發明之處理裝置，基板因以所形成之抗蝕 膜被乾燥成適當狀態下之後，方輸送至其後之熱處理過程 ，因而，可抑制產生轉印至抗蝕膜之情事。又真空乾燥和 淸除周（邊）緣抗蝕劑能在不移動基板之下，在同一空間 來實施，因而可意圖裝置之小型化。再者，於該等之處理 裝置，在基板周緣整體能同時實施淸除抗蝕劑也極爲理想 ，因此可縮短生產節拍，而可意圖增進生產性。 而做爲使用如此之處理裝置的基板處理方法，依據本 發明係要提供一種塗佈有抗触劑之基板的處理方法，其特 徵爲：載置前述基板於（處理）室內之所定位置之後，減 壓前述室內成低真空環境且保持所定時間，接著予以維持 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） 504844 A7 B7 五、發明説明（5 ) 前述減壓環境或恢復成大氣（壓）環境，以淸除前述基板 周緣部之抗飩劑。 (請先閲讀背面之注意事項再填寫本頁) 使用如此之處理方法時，就可有效果性地防止產生轉 印於基板之情事。 再者，在日本國專利特開平3 - 1 0 1 8 6 6號公報 ，揭示有依序成一列配置之液體塗佈用旋轉器，真空乾燥 裝置，被處理物之背面洗淨用旋轉器之被膜形成裝置。但 在該同公報對於非處理物之周緣部之淸除被膜，並未有任 何之敘述，甚至防止對於被膜產生轉印或背面洗淨後之真 空乾燥也未有記載。又以記載於同公報之被膜形成裝置， 因對於旋轉器等之3種裝置的各個需要配置用之空間，因 而內在有裝置會更成爲大型化之問題。 〔發明之實施形態〕 以下，將參照所附上之圖式來說明有關要處理做爲基 板之L C D基板（以下簡稱爲基板）的抗蝕劑塗佈、顯像 處理系統爲例之本發明實施形態。 經濟部智慧財產局員工消費合作社印製 圖1係抗蝕劑塗佈、顯像處理系統之平面圖，該抗蝕 劑塗佈、處理系統係具有：要載置收容複數基板G用的卡 匣C之卡匣站1 ;具備用於對基板G實施包括抗蝕劑塗佈 及顯像之一連串處理的複數單元之處理部2;及要在與曝 光裝置（未圖示）之間進行交接基板用之轉接（Interface )部3，並在處理部2兩端，各別配置卡匣站1及轉接部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8 - 504844 A7 B7 五、發明説明（6 ) 卡匣站1具有要搬運基板G於卡匣C和處理部2之間 的搬運機構10，而在卡匣站1予以實施卡匣C之搬出搬 入。又搬運機構1 0具有可移動於沿排列方向所配設之搬 運道1 0 a上之搬運臂1 1，而由該搬運臂1 1來進行搬 運基板G於卡匣C和處理部之間。 處理部2乃分爲前段部2 a、中段部2 b及後段部2 c，且在中央各具有搬運道12、 13、 14，各處理單 元則配設於該等搬運道兩側，並在該等之中間，配設有中 繼（轉接）部1 5、16。 前段部2 a具有可沿搬運道1 2移動之主搬運裝置 1 7，而在搬運道1 2之一方側配置了 2部之洗淨單元（ SCR)2 1a、2 lb，搬運道12之另一方側乃配置 有疊成2層之紫外線照射單元（U V )和冷却單元 (C〇L )的處理組（Block ) 25，疊成2層之加熱處理 單元（HP)的處理組26及疊成2層之冷却單元 (C〇L )的處理組2 7。 又中段部2 b乃具有可沿搬運道1 3移動之主搬運裝 置1 8，而在搬運道1 3 —側乃配設有抗蝕劑塗佈處理單 元（C T ) 2 2。相鄰於抗蝕劑塗佈處理單元（C T ) 2 2，則設有要真空乾燥在抗蝕劑塗佈處理單元（CT) 2 2形成抗蝕（劑）膜後之基板G，而後，維持保持基板 G於同一位置之下來淸除（去除）基板G周（邊）緣部之 抗蝕劑用的真空乾燥/周緣抗飩劑淸除單元（VU/ER 單元）23。再者，該抗蝕劑塗佈處理單元（CT) 22 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 舞· 經濟部智慧財產局員工消費合作社印製 -9- 504844 A7 £7_ 五、發明説明（7 ) 和VU/ER單元2 3，有可能形成爲做爲連續之1部裝 置。 (請先閲讀背面之注意事項再填寫本頁) 在搬運道1 3之另一方側，配置有疊成2層之加熱處 理單元（HP)的處理組28，將加熱處理單元（HP) 和冷却處理單元（COL)疊成上下之處理組2 9及重疊 黏著處理單元（AD)和冷却單元（C0L)成上下之處 理組3 0。 再者，後段部2 c具有可沿搬運道1 4移動之主搬運 裝置1 9，而在搬運道1 4 一方側乃配設有3部之顯示處 理單元（DEV) 24a、24b、24c，在搬運道 1 4另一方側係配置了疊成2層加熱處理單元（Η P )所 形成之處理組3 1及重疊加熱處理單元（Η P )和冷却處 理單元（C 0 L )成上下所形成之處理組3 2、3 3。 又處理部2乃夾著搬運道構成爲僅在一方側配置如洗 淨處理單元2 1 a、抗蝕劑處理單元2 2、顯像處理單元 2 4 a之旋轉系單元，而在另一方側乃僅配置加熱處理單 元或冷却處理單元等之熱系（列）處理單元的結構。 經濟部智慧財產局員工消費合作社印製 再在中繼部15、 16之旋轉系單元配置側之部分乃 配置有藥液供應單元3 4，進一步配置有要進行主搬運袋 之維修用的空間3 5。 主搬運裝置17、 18、 19各個乃具有水平面內之 X軸驅動機構、Y軸驅動機構、及垂直方向之Z軸驅動機 構，再者具備有以Z軸爲中心可旋轉之旋轉驅動機構，並 且各具有要支承基板G之臂（未圖示）。 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） 經濟部智慧財產局員工消費合作社印製 504844 A7 B7 五、發明説明（8 ) 主搬運裝置1 7乃具有能與搬運機構1 0之臂1 1間 進行交接基板G之同時’對於前段部2 a之各處理單 搬入搬出基板G，以及進行基板G之交接於與中繼部1 5 之間的功能。又主搬運裝置1 8乃具有能與中繼部1 5之 間進行交接基板G之同時，對於中段部2 b之各處理單元 的搬入搬出基板G以及與中繼部16之間進行交接基板G 之功能。再者，主搬運裝置1 9具有與中繼部1 6之間進 行交接基板G之同時，對於後段部2 c之各處理單元進行 搬入搬出基板G，再者與轉接部3進行交接基板G的功能 。又中繼部15、 16也可做爲冷却板來產生作用。 轉接部3乃具備有：會在與處理部2之間交接基板時 ，可暫時性地保持基板用的延伸部（Extension ) 3 6 ;配 設於延伸部兩側之要配置兩個緩衝台3 7 ;及與該等和曝 光裝置（未圖示）之間進行搬入搬出基板G的搬運機構 38。搬運機構38乃具有可沿延伸部3 6及緩衝台3 7 之排列方向所配設的搬運道3 8 a上移動之搬運臂3 9 ’ 而由該搬運臂3 9來搬運基板G於處理部2和曝光裝置之 間。 以如此地匯集各處理單元成爲一體化，就可意圖省空 間化及處理之效率化。 在於構成如此之抗鈾劑塗佈、處理系統，將卡匣C內 之基板G搬運至處理部2，而在處理部2，首先會在前段 部2 a之處理組2 5的紫外線照射單元（U V )進行表面 改質、洗淨處理，而後在冷却單元（C 0 L )冷却之後， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)504844 A7 B7 5. Description of the invention (i) [Background of the invention] The present invention relates to the formation of a resist film on the surface of a substrate such as a glass substrate for a liquid crystal display (LCD) or a semiconductor wafer, and then a portion of the resist is removed. Membrane, processing device for processing such as drying, and processing method thereof. For example, when manufacturing L CD, a photoresist (photoresist) liquid is applied to a rectangular LCD substrate made of glass to form a resist film, and the anti-corrosive agent is exposed in accordance with the circuit pattern. The so-called photolithography (also known as photolithography) is used to develop a film and develop it to form a predetermined pattern. The formation of such a circuit pattern is carried out by using a resist coating and developing system using a plurality of processing units. In such a system, first, the substrate is subjected to surface modification by irradiating ultraviolet rays as needed, and the substrate is cleaned. Then, the cleaning unit performs brush cleaning and ultrasonic water cleaning. Then, in order to improve the stability of the resist, the substrate is subjected to a hydrophobic treatment (HMDS treatment) in the adhesion processing unit, and then the resist is applied in the resist coating processing unit. For the substrate on which the resist film is formed in this way, the pre-baking process performed by the heating unit and the pattern not exposed by the exposure device are sequentially performed, the development process is performed in the development processing unit, and the drying process is performed after the heating unit. To form a predetermined circuit pattern on the substrate. The processing from the application of the resist until the pre-baking will be explained in detail. First, hold the substrate that has been subjected to the degreasing treatment to a rotating chuck that can be rotated horizontally, and after supplying the resist from the top, rotate it (please read the precautions on the back before filling this page). Order the intellectual property of the Ministry of Economic Affairs The paper size printed by the Bureau ’s Consumer Cooperatives applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -4- 504844 A7 B7 V. Description of the invention (2) (Please read the precautions on the back before filling this page) Substrate , The resist is diffused by centrifugal force to form a film on the substrate. When the resist is applied in this way, the thickness of the resist film immediately after coating is uniform, but after stopping rotation, no centrifugal force is generated, or with the passage of time, it will be affected by the surface tension. The resist is raised and thickened at the edge of the substrate. In the case of coating by such a rotation method, the removed resist will be wound around the substrate and adhere to it. Films of uneven thickness formed on the periphery (edge) of the substrate or resists adhered to the back surface may cause particles to be generated during subsequent substrate transportation, and may also be used to contaminate the substrate. The reason for this is that, traditionally (in the past), the removal (removal) of these resists was carried out by discharging the processing liquid such as thinner at a predetermined position, and then the substrate was transported to a pre-baking process. [Summary of Invention] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs when using the above-mentioned process from forming a resist (resin) film to erasing (removing) the resist on the periphery and back of the substrate before pre-baking When the substrate is subjected to a pre-baking process or the like, or when the substrate is exposed and subjected to a development process. The contact marks with the fixing pins for supporting the substrate or the lifting pins for raising and lowering the substrate may be transferred (copied) to the substrate during heat treatment such as pre-baking treatment. In addition, the processing liquid such as thinner is discharged and supplied. In the past, this was performed using a nozzle mechanism that can move along the periphery (edge) of the substrate. However, in this state, it takes time to scan the nozzle. The processing time of each substrate will become long. As a result, it has the time required to include other processes. -5- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). 504844 A7 B7 5. Description of the invention (3) Time (Tact time) will become a long time problem. (Please read the notes on the back before filling out this page) The present invention was invented in view of the above circumstances. The purpose is to provide a processing device and a processing method capable of preventing the transfer time and shrinkable production tact time of a substrate. In order to solve the above-mentioned problem, the applicant of this case has disclosed in a Japanese Patent Japanese Patent Application No. 10-233599, the same as No. 10-369306, a resist coating processing unit arranged in a row to apply a resist to a substrate, and a vacuum A vacuum drying unit for drying a substrate on which a resist (resist) film has been formed, and a processing device for a peripheral anti-feedback agent removing unit for removing a resist from a peripheral portion of the substrate after the vacuum drying. However, when the anti-repellent coating processing unit, the vacuum drying unit, and the peripheral resist erasing unit are separately provided in such a structure, the space occupied by each unit will become wide, which causes a problem that the device becomes large. As for the peripheral resist erasing unit, since the type of the scanning nozzle is used, it is expected to shorten the production cycle time. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition to the aforementioned problems, the present invention also has to solve such new problems. The first invention is to provide a device for processing a substrate coated with a resist. The method is as follows: in a state where the substrate on which the resist (resist) film is formed is maintained at a predetermined position, the substrate is vacuum-dried and the resist on the periphery (edge) of the substrate is removed. The second invention is to provide a processing device for applying a resist to a substrate and subjecting the formed resist film to a drying treatment before heating treatment, which is characterized in that: Anti-corrosive coating processing unit, substrates with a resist film to be vacuum-dried, and standard paper sizes to be applied (CNS) A4iUM 210X297 mm) I " " 504844 A7 B7 V. Description of the Invention (4) The vacuum drying / peripheral resist erasing unit for removing the resist in the peripheral portion of the substrate. (Please read the precautions on the back before filling this page.) The third invention is to provide a processing device for a substrate coated with a resist, which is characterized by: A processing chamber; a degassing mechanism for decompressing the interior of the chamber; and a peripheral resist erasure mechanism for erasing (removing) the resist on the periphery of the substrate in the chamber. The fourth invention is to provide a processing device, which is characterized by including a resist coating processing unit to apply a uranium-resistant agent to a substrate, and a post-processing processing unit for the substrate after the uranium-resistant agent is applied. The post-processing unit includes: a (processing) chamber on which a substrate is to be placed; an exhaust mechanism to decompress the interior of the chamber; and a peripheral edge of the resist to wipe out the peripheral portion of the substrate in the interior of the chamber. Resist erasure mechanism. Printed on the consumer device of the Intellectual Property Bureau of the Ministry of Economic Affairs in the processing device of the present invention, the substrate is transported to the subsequent heat treatment process after the formed resist film is dried to an appropriate state, so that the generation of the substrate can be suppressed. Transfer to a resist film. In addition, the vacuum drying and erasing of the peripheral (edge) edge resist can be performed in the same space without moving the substrate, so that the device can be miniaturized. Furthermore, in such a processing device, it is also very desirable to be able to simultaneously perform resist removal on the entire periphery of the substrate. Therefore, the production cycle can be shortened, and the productivity can be improved. As a substrate processing method using such a processing device, according to the present invention, a processing method of a substrate coated with an anti-contact agent is provided, which is characterized in that after the aforementioned substrate is placed in a predetermined position in a (processing) room, Decompress the aforementioned room into a low-vacuum environment and maintain it for a predetermined period of time, and then maintain this paper standard to apply Chinese National Standard (CNS) A4 specifications (210X29 * 7 mm) 504844 A7 B7 V. Description of the invention (5) The aforementioned decompressed environment or Restore to atmospheric (pressure) environment to wipe out the anti-rust agent on the periphery of the substrate. (Please read the precautions on the back before filling out this page.) When using such a treatment method, it is possible to effectively prevent the transfer to the substrate. Furthermore, Japanese Patent Laid-Open No. 3-1 0 1 8 6 6 discloses a spinner for liquid coating, a vacuum drying device, and a spinner for cleaning the back surface of objects to be processed, which are sequentially arranged. Film formation device. However, in the same publication, there is no description of the removal of the film on the peripheral portion of the non-treated object, and there is no record of preventing the film from being dried or dried after the transfer of the film or the back surface is cleaned. In addition, the film forming apparatus described in the same publication requires space for each of the three types of devices such as a rotator. Therefore, there is a problem that the internal device becomes larger. [Embodiment of Invention] Hereinafter, the implementation of the present invention will be described with reference to the attached drawings as an example of a resist coating and development processing system for an LCD substrate (hereinafter referred to as a substrate) to be processed as a substrate. form. Printed in Figure 1 is a plan view of a resist coating and development processing system of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The resist coating and processing system includes a cassette C for storing a plurality of substrates G. Cassette station 1; processing unit 2 provided with a plurality of units for performing a series of processes including resist coating and development on substrate G; and for transferring substrates to and from an exposure device (not shown) Interface section 3, and at both ends of the processing section 2, the cassette station 1 and the transfer section are respectively configured. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8-504844 A7 B7 V. Description of the Invention (6) The cassette station 1 has a transport mechanism 10 for transporting the substrate G between the cassette C and the processing unit 2, and the cassette C is carried in and out at the cassette station 1. Further, the transport mechanism 10 has a transport arm 11 that can be moved on a transport path 10 a arranged in the alignment direction, and the transport arm 11 transports the substrate G between the cassette C and the processing unit. The processing section 2 is divided into a front section 2 a, a middle section 2 b, and a rear section 2 c, and each has a conveying path 12, 13, 14 in the center, and each processing unit is arranged on both sides of these conveying paths, and Among these, relay (transfer) sections 1 and 16 are provided. The front section 2 a has a main conveying device 17 that can be moved along the conveying path 12, and two cleaning units (SCR) 2 1 a and 2 lb are arranged on one side of the conveying path 12, and the other 12 of the conveying path 12 On one side, there are a processing group (Block) 25 equipped with a two-layer ultraviolet irradiation unit (UV) and a cooling unit (COL), a processing group 26 with a two-layer heating processing unit (HP), and a stack Process group 2 7 of the 2-layer cooling unit (COL). The middle section 2b is provided with a main conveyance device 18 which can move along the conveyance path 13 and a resist coating treatment unit (C T) 2 2 is provided on the conveyance path 1 3-side. Adjacent to the resist coating processing unit (CT) 2 2 is provided a substrate G to be vacuum-dried after the resist coating processing unit (CT) 2 2 has formed a resist (resist) film, and then maintained The vacuum drying / peripheral anti-erosion agent erasing unit (VU / ER unit) 23 for erasing (removing) the resist on the peripheral (edge) edge of the substrate G is held under the same position. In addition, the resist coating processing unit (CT) 22 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling in this page) Printed by the Consumer Property Cooperative of the Intellectual Property Bureau-9-504844 A7 £ 7_ V. Description of the Invention (7) and VU / ER unit 23 may be formed as a continuous device. (Please read the precautions on the back before filling this page.) On the other side of the conveying path 1 3, a processing group 28 with a heat treatment unit (HP) stacked in two layers is arranged. The heat treatment unit (HP) and cooling The processing unit (COL) is stacked in the upper and lower processing groups 29 and the overlapping adhesion processing unit (AD) and the cooling unit (C0L) are stacked in the upper and lower processing groups 30. In addition, the rear section 2 c has a main conveying device 19 that can move along the conveying path 14, and three display processing units (DEV) 24 a, 24 b, and 24 c are arranged on one side of the conveying path 14. The other side of the conveying path 1 4 is provided with a processing group 3 1 formed by stacking two layers of heat treatment units (Η P), and an overlapping heat treatment unit (Η P) and a cooling treatment unit (C 0 L) are formed up and down. The treatment group 3 2, 3 3. The processing unit 2 is a rotating system unit that is configured such that the cleaning processing unit 2 1 a, the resist processing unit 2 2, and the developing processing unit 2 4 a are arranged on only one side with the conveying path interposed therebetween, and on the other side. It is a structure in which only a thermal processing unit (column) processing unit such as a heating processing unit or a cooling processing unit is arranged. Printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and on the side of the rotation system unit configuration of the relay unit 15, 16 is equipped with a medicinal solution supply unit 3 4 and further a space 3 for the maintenance of the main carrying bag 3 5. Each of the main conveying devices 17, 18, and 19 includes an X-axis drive mechanism, a Y-axis drive mechanism, and a Z-axis drive mechanism in a horizontal plane, and a rotation drive mechanism that is rotatable around the Z-axis. Each has an arm (not shown) to support the substrate G. This paper size applies Chinese National Standard (CNS) A4 (21 × 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 504844 A7 B7 V. Description of the invention (8) The main handling device 17 is equipped with a handling mechanism At the same time, the arm 10 of 10 performs the function of transferring substrates G to the processing unit of the front section 2a, and transferring the substrates G to and from the relay unit 15. In addition, the main conveying device 18 has a substrate G that can be transferred to and from the relay unit 15 and transfers substrates G to and from each processing unit of the middle section 2 b and transfers the substrate G to and from the relay unit 16. Its function. In addition, the main conveying device 19 has a substrate G to be transferred to and from the relay unit 16, and each processing unit in the rear section 2c to transfer the substrate G to and from the processing unit, and transfers the substrate G to the transfer unit 3. Functions. The relay sections 15 and 16 can also function as cooling plates. The transfer unit 3 is provided with: an extension 3 6 for temporarily holding the substrate when transferring the substrate to and from the processing unit 2; two buffer tables are arranged on both sides of the extension 37; and a transport mechanism 38 for carrying in and out of the substrate G to and from the exposure apparatus (not shown). The conveying mechanism 38 has a conveying arm 3 9 ′ that can move along the conveying path 3 8 a arranged along the arrangement direction of the extension portion 36 and the buffer table 37, and the conveying arm 39 conveys the substrate G to the processing portion. 2 and exposure device. By integrating the processing units in such a way, it is possible to save space and improve processing efficiency. The construction of such an anti-uranium agent coating and processing system is to transfer the substrate G in the cassette C to the processing unit 2. In the processing unit 2, first, the ultraviolet irradiation unit of the processing group 25 in the front section 2a ( UV) for surface modification and cleaning treatment, and after cooling in the cooling unit (C 0 L), this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page)
504844 A7 B7 五、發明説明（9 ) 實施刷洗洗淨於洗淨單元（S C R )，並在處理組2 6之 任一之加熱處理單元（Η P )被加熱乾燥（烘乾）後，在 處理組2 7之任一冷却單元（C Ο L )被冷却。 然後，基板G會被搬運至中段部2 a ，爲了增進抗蝕 劑之固定性，將在上層之黏著處理單元（AD )實施疎水 化處理（HMDS處理），於下層之冷却單元（COL) 冷却後，在抗触劑塗佈處理單元（CT) 2 2予以塗佈抗 蝕劑，而後，依序進行抗蝕膜之低真空度下之真空乾燥於 VU/ER單元2 3、淸除附著於基板G周（邊）緣部之 抗蝕劑及附著於基板G背面之抗蝕劑（以下，如此之處理 ，將稱爲「淸馀周緣」。），及進行抗蝕膜在高真空度下 之真空乾燥。再者，所謂淸除周緣乃指包括淸除基板G之 形成有抗鈾膜之面周緣（四周緣部）的抗蝕劑，及淸除附 著於基板G側面及基板G背面之抗蝕劑的處理。 而後，基板G將在中段部2b中之加熱單元（HP) 之一實施預烘乾處理，並在處理組2 9或3 0之下層冷却 單元（COL)被冷却。接著，基板G會從中繼部16以 主搬運裝置1 9且藉轉接部3來搬運至曝光裝置，並在該 處曝光成所定之圖案。然後，基板G再度藉轉接部3被搬 入處理部2，並伴隨著所需，將在後段部之處理組3 1、 32、 33之任一的加熱處理單元（HP)實施後曝光烘 乾處理後，在顯像處理單元（DEV) 24a、24b、 2 4 c之任一實施顯像處理，以形成所定之電路圖案。被 顯像處理之基板G，將在後段部2 c之任一的加熱處理單 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -12- 504844 A7 B7 五、發明説明（1〇 ) 元（HP )實施後烘乾處理之後，在任一之冷却單元（ C〇L)被冷却，並由主搬運裝置19、 18、 17及搬 (請先聞讀背面之注意事項再填寫本頁) 運機構10來收容於卡匣站1上之所定之卡匣。 接著，詳細地說明有關本發明之實施形態之一的V U / E R單元。 圖2係顯示V U / E R單元2 3之構造的一實施形態 VU/ER單元2 3A之剖面圖。於VU/ER單元2 3 A，將設置成升降自如之上室（蓋體）4 1從上方下降於 被固定著之下室4 2，並藉密封材料4 8來緊密地黏著上 下室41、 42,就可形成爲處理室91。 經濟部智慧財產局員工消費合作社印製 在下室4 2乃配置有要載置基板G之台4 5而以使用 升降機構4 4 (僅顯示升降棒而已）配設成升降自如，又 在基板G周緣下部配設背面洗淨用管嘴5 0。背面洗淨用 管嘴5 0形成有孔部8 8，處理液供應管8 7配設成連通 於孔部8 8 ’使得處理液可從孔部8 8之上端開□吐出於 基板G之所定位置。亦即’背面洗淨用管嘴5 0係用於在 進行淸除周緣時’主要能淸除附著於基板G背面之抗蝕劑 者。 下室4 2之底壁設有第1排氣口 4 3 ’側壁則配設有 第2排氣口 4 6。第1排氣口 4 3主要擔任進行排氣處理 室9 1，但在淸除周緣時，會達成排出一部分的稀釋劑等 之處理液用的任務。又第2排氣口 4 6主要乃要排出在淸 除周緣時之處理液爲目的而設置’但也具有排氣處理室 9 1之功能。第2排氣口 4 6理想爲設成與基板大致成同 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） _ 13_ 504844 A7 ___B7_ 五、發明説明（Μ ) 一高度之位置，亦就是基板G之外周外周（邊）緣部，也 可配設成非在下室4 2而是配設於上室4 1。 上室4 1係如圖3之平面圖所示，沿基板G外周（圍 )配設有爲沿基板G周緣供應被使用於淸除周緣用之處理 液的機構之淸除周緣器4 9。該淸除周緣器4 9具有要吐 出處理液的管嘴4 7，而管嘴4 7乃使用內裝於淸除周緣 器49之致動器（開動器）89形成升降自如。再者，在 於VU/E R單元2 3 A之淸除周緣器4 9乃指主要進行 淸除基板G之形成有抗蝕膜之面的周緣部及基板G側面之 抗飩劑用者。 如圖2所示，管嘴4 7形成有孔部8 6，而處理液之 供應管8 5配設成連通於孔部8 6。管嘴4 7之處理液吐 出口之形態，亦即孔部8 6之形態係有成連續狀之縫隙形 狀或以所定間隔來形成孔狀之吐出口等者。再者，做爲管 嘴4 7也可使用成連續配設之形成有一處以上之吐出口的 複數管嘴者。 接著，說明有關如此之記載於圖2、圖3之U V / ER單元2 3A的使用方法。首先，予以上升上室4 1 ’ 又台4 5也做成爲上升至較下室4 2之周緣爲高之位置爲 止之狀態，而從抗蝕劑塗佈單元（C T ) 2 2搬運形成有 抗蝕膜之基板G並載置基板G於台4 5上之後，降下台 45及基板G。再者，有關載置基板G於台45，也可採 用搬運基板G至所定位置爲止而形成待命（等待）狀態下 予以上升台4 5來進行基板G之交接，並在回行搬運機構 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14- 504844 A7 B7 五、發明説明（12 ) 至原來位置後，方降下台4 5之方法等。 其次，降下上室4 1來形成處理室9 1 ，而從第1排 (請先閲讀背面之注意事項再填寫本頁) 氣口 4 3及/或第2排氣口進行排氣，以令處理室9' 1內 成爲所定之減壓（真空）環境，例如2〜lOTor r程 度之低真空狀態並保持所定時間。對於基板G實施如此之 低真空環境下之真空乾燥處理時，由於包含於抗蝕膜之揮 發成分會逐漸蒸發，因而能在不會波及不良影響於抗蝕膜 之下來使抗蝕膜形成適當地乾燥，使得如將後述，可有效 地防止產生轉印於基板G上。 當完成低真空環境下之處理的時刻，令致動器8 9產 生動作而使待命於上室4 1下面附近之管嘴4 7降下至所 定位置爲止，而供應淸除周緣用之處理液於供應管8 5， 使之從孔部8 6之下端開口吐出，另一方面，供應處理液 至配設於背面洗淨用管嘴5 0之供應管8 7，而從孔部 8 8之上側開口部吐出處理液，以對於基板G之周緣部整 周圍（四邊）同時進行淸除周緣。 經濟部智慧財產局員工消費合作社印製 要進行淸除周緣之環境，可使用維持在於減壓成低真 空之狀態，或恢復至常壓（正常壓力）狀態之任一狀態。 如前述，要進行淸除周緣時，形成於基板G之抗蝕膜因在 於適當地被乾燥之狀態下，因而’可容易地來淸除（去除 )抗蝕劑。 再者，在於淸除周緣時，若主要以動作第2排氣口 4 6來進行處理液之回收處理時’就可減低處理液流入於 第1排氣口 4 3之量，使得可意圖減低維護配備於第1排 -15- 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公釐） 504844 A7 B7 13 五、發明説明（ 氣口 4 3之排氣系的排氣泵（未圖示）等之負荷（負擔） 而極爲理想。 (請先閲讀背面之注意事項再填寫本頁) 當終了之處理液έ吐出之後，將處理室91內做成例 如0 · 1〜2 Τ 〇 r r左右之高真空狀態，並予以保持所 定時間。由於在如此之高真空下來實施處理，因此，可令 處理液蒸發，又可促進蒸發包含於抗鈾膜之揮發成分。於 此狀況時，因在前階段對於抗蝕膜已實施有低真空下之乾 燥處理，因而，既使保持成高真空環境，也不會引起揮發 成分之突然（陡峭狀）蒸發而波及不良影響於抗蝕膜。 再者，維持保持管嘴4 7於接近於基板G之吐出位置 之下來排氣處理室9 1內能成低真空或高真空時，有可能 在排氣之初始時會產生強大之氣流於基板G和管嘴4 7之 間，而使在基板G外周部引起抗鈾膜之厚度產生變化之狀 況。因此，理想爲當要進行處理室9 1內之減壓時，預先 朝上方上升管嘴4 7以擴大與基板G之間隔，以令由排氣 所產生之氣流並不會波及影響至抗蝕膜。 經濟部智慧財產局員工消費合作社印製 當完成高真空環境下之乾燥基板G後，令處理室9 1 恢復至大氣壓，上升上室4 1及台4 5，而搬運基板G至 其次過程之要進行熱處理的加熱處理單元（Η P )。基板 G之抗蝕膜當在加熱處理單元（HP)，因已獲得所謂低 真空度下之乾燥及高真空度下之乾燥的二階段之乾燥處理 ，因而，即使予以加熱也不會引起成分形成突然蒸發。 再者，前述之低真空度下之乾燥和高真空度下之乾燥 ，也可實施相反之順序，如抗蝕劑塗佈後之乾燥在高真空 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16 - 504844 A7 ___ B7_ 五、發明説明（M ) (請先閲讀背面之注意事項再填寫本頁) 度下進行，而淸除周緣後之真空乾燥乃在低真空度下進行 。又也可不進行淸除周緣前之在低真空下的乾燥處理而進 行淸除周緣，然後在高真空下進行乾燥處理。但在該狀態 時，理想爲應注意要設定在達高真空爲止之時間成爲較已 進行低真空下之乾燥時更長，以令抗蝕膜中之揮發成分不 會產生突然（驟然）地蒸發。 經濟部智慧財產局員工消費合作社印製 以如此地本發明在實施加熱處理前，所以要進行由真 空乾燥來進行抗蝕劑成適當的乾燥，其理由因爲，在加熱 處理後會產生轉印於基板G之最大原因，乃在基板G，提 升銷（lift pin )等所接觸之部分的溫度經歷會成爲與其他 之非接觸部分相異，使得加熱處理時，抗蝕劑之膜厚會對 應於提升銷等之形狀來產生變化，又在曝光、顯像處理後 所以會產生轉印之原因，可思爲，形成於基板G上之電路 圖案的線寬會對應於提升銷等之形狀來產生變化而引起。 亦即，倘若依照上述之過程來在加熱處理前，適當地令抗 蝕膜成乾燥時，抗蝕劑的流動性會變小，又不會引起由加 熱而使成分產生突然蒸發，使得抗蝕劑之膜厚難以產生變 化，由而，可迴避在基板G上產生轉印。 以如此，依據V U / E R單元2 3 A，不僅可有效地 防止產生轉印於基板G而可意圖增進生產生，且令形成於 基板G之抗蝕膜之在低真空下之真空乾燥，及抗蝕膜之在 高寘空下之乾燥，能在載置基板G於所定位置，亦即一個 部位來進行，因此可意圖裝置之節省空間化、小型化。又 不需要令基板G移動之時間，及在淸除周緣時也不需要掃 本紙張从適用中關家揉準（0叫厶4胁（2敝297公釐)71 504844 A7 B7 五、發明説明（15 ) 描管嘴，因而，可意圖縮短處理時間，進而可意圖縮短生 產節拍時間。再者在Η P單元之加熱處理，也由於抗鈾劑 已事先被乾燥，因此，也可意圖縮短乾燥時間。 亦即，如圖8 ( a )所示’在形成各別具有真空乾燥 裝置和淸除周緣之習知系統，需要例如由真空乾燥裝置所 實施之處理時間4 0秒鐘，從真空乾燥裝置搬運至淸除周 緣器之時間1 0秒鐘及由淸除周緣器所進行處理之時間 5 0秒鐘的合計1 0 0秒鐘之處理時間。而如圖8 ( b ) 所示，本發明之VU/ER單元2 3A時，不僅不需要如 前述之搬運時間，且也會在真空乾燥處理和淸除周緣之間 產生重疊，因而，合計之處理時間會成爲例如約4 0秒鐘 之程度。 接著，參照圖4來說明有關VU/ER單元之另一實 施形態。 於圖4所示之VU/ER單元2 3 B，使用著與使用 於VU/ER單元2 3A者同樣的升降機構4 4和台4 5 ，下室6 7配設了背面洗淨用管嘴5 0，又除了第1排氣 口 4 3和第2排氣口 4 6之外，沿著基板G外周（邊）形 成有第3排氣口 6 8於下室6 7之底壁外周部。 第3排氣口68，主要可達成從管嘴69、 50供應 要使用於淸除周緣用之處理液時，無法從第2排氣口 4 6 吸引之處理液使之排出的任務者，使得具有可減低處理液 流入於第1排氣口之量。由而，可減低有關使用於第1排 氣口 4 3之排氣系的排氣泵等之維護等之負荷°再者’亦 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -18 - 504844 A7 B7___ 五、發明説明（16 ) 可不配設第2排氣口 4 6而用第3排氣口 6 8來做爲主要 之處理液的排出。 上室6 6係被形成爲升降自如，以藉密封材料4 8來 與下室6 7相接觸，就可形成處理室9 2。於設在上室 6 6之淸除周緣9 4具備沿著基板G外周的管嘴6 9，而 管嘴6 9乃配設成處理液供應管9 5連通於被形成在管嘴 6 9之孔部。管嘴6 9之孔部9 6之形態係可做成與前述 VU/ER單元2 3A之狀況成同樣。 管嘴6 9當在不吐出處理液之狀態時，乃被收容於圖 中以虛線所示之位置，而要實施淸除周緣時，就由氣缸 9 7等來從虛線位置旋轉所定角度（在管嘴爲9 0 ° )而 配置於以實線所示之位置，以構成可吐出處理液。以如此 地做成旋轉驅動管嘴6 9時，就不需要升降管嘴6 9，又 在減壓處理室9 2內時，能收空管嘴6 9至前述虛線位來 使管嘴6 9和基板G之間成爲廣闊，因此，可令排氣時對 於抗蝕膜所產生之氣流影響變爲小。 圖5係顯示V U / E R單元之再另一實施形態的剖面 圖。在於VU/ER單元2 3 C，以配合於基板G之外周 且以所定間隔來形成貫穿孔7 3於上室7 1，而貫穿孔 7 3連接有處理液之供應管7 4。處理液之供應可由例如 斷流閥（止動閥）7 7來控制。亦即，構成爲貫穿孔7 3 可做爲用以淸除周緣用之處理液的吐出管嘴產生功能之構 造。 以如此地構成上室其本身也成爲處理液供應機構時， 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -19 - 504844 A7 B7 五、發明説明（17 ) 將成爲與前述之VU/ER單元23A、 23B有所不同 ，且並不需要另外配設需要複雜動作之管嘴4 7、69， 使得可減低上述7 1本身之上下方向之厚度。 又在下室7 2之底壁’以沿著基板G外周且以所定間 隔來形成貫穿孔7 5 ’且連接有處理液之供應管7 6於貫 穿孔7 5。在供應管7 6也配設有斷流閥7 8等而構成爲 可控制處理液之供應’由而，貫穿孔7 5可產生在於清除 周緣時之尤其做爲在進行淸除基板G背面之抗飩劑用之處 理液吐出的功能。因此’於下室，並不需要用以配設前述 之背面洗淨用管嘴5 0用之空間，使得也可令下室7 2其 本身成爲薄之厚度者。 當使用如此之上、下室71、 72時，可令裝置整體 成爲厚度爲薄之小且簡潔者，且由上、下室7 1、7 2所 形之處理室9 3也可變爲小，以至可意圖縮短排氣時間， 又真空泵等也可使用小型者。 在於下室72，僅形成有第2排氣口 46。爲此，爲 了確實地排出吐出於基板G之處理液至外部（外面），將 在上、下室7 1、72，令要挾持基板G之部分可成爲與 基板G之距離爲短之壁厚。爲此，當在剛形成抗鈾膜於基 板G之後的真空乾燥時，理想爲令排氣速度開始時成爲小 ，以令由排氣所產生之氣流不會使抗蝕膜之厚度產生變化 。然而，甚至在於如此之狀態下，也由於處理室9 3之空 間體積小，使得排氣時間與前述之V U / E R單元2 3 A 、23B相比較也不會形成更爲長等之不適合之情事。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) **ιτ MW. 經濟部智慧財產局員工消費合作社印製 -20- 504844 A7 B7 五、發明説明（18 ) 上述之VU/ER單元23B、 23C雖做成與VU /E R單元2 3 A之供應處理液用的管嘴周圍之形態及處 理液等之排出路徑的形態有所相異，但仍可使用與V U / E R單元2 3 A同樣之方法來進行處理基板G。又有關上 述之又11./£11單元2 3厶〜2 3(：，用以處理室之排氣 或處理液之排出的排氣口，只要至少形成有第1至第3之 排氣口43、 46、 68中之一就可。 於VU/ER單元2 3A〜2 3 C雖構成爲設有台於 升降機構，下室做成固定之形態，但台與下室之形狀及構 造，只要在於可容易實施交接之範圍內並不會加以限制。 亦即，對於台並不一定必要使用升降機構，也可構成爲固 定台而使下室可上下動，或配設可突出或埋設之銷。又也 可構成基板之搬運臂之形狀或搬運臂和台間之基板的交接 方法成爲恰當者時，也可做成台和下室雙方形成固定狀態 〇 以上，做爲有關本發明之處理裝置的實施形態，雖以 各種之V U / E R單元做爲例子來加以說明，惟V U / E R單元也可構成爲如圖6之平面圖及圖7之剖面圖所示 ，與在其前過程所要使用之抗蝕劑塗佈單元（CT) 2 2 相連結來形成爲一連串之裝置。 如圖6、圖7所示，抗蝕劑塗佈處理單元（C T ) 2 2乃具有：吸著保持基板G成爲可水平旋轉之旋轉夾盤 5 1 ;包圍旋轉夾盤5 1上端部，且包圍被吸著保持於旋 轉夾盤5 1之基板G而上端部爲開口之有底開口圓筒狀之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） {請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 504844 A7 B7 五、發明説明（19 ) 旋轉杯5 2 ;關閉旋轉杯5 2上端開口部之蓋體（未圖示 );及被固定配置成包圍旋轉杯5 2外周之塗佈器杯（狀 物）5 3。 、 又抗蝕劑塗佈處理單元（CT) 2 2乃構成具有要滴 下抗蝕劑於基板G用之管嘴臂5 5，且吐出抗蝕劑用之吐 出管嘴5 6配設於管嘴臂5 5前端。當在滴下抗蝕劑時， 管嘴臂5 5前端可移動至基板G中心。當滴下抗蝕劑時， 蓋體會避開且旋轉杯5 2之上部形成打開狀態而由旋轉夾 盤5 1來旋轉基板G，並構成在擴散抗蝕劑時，基板G由 旋轉夾盤5 1來旋轉之同時，被關閉蓋體之狀態的旋轉杯 5 2會被旋轉。再者，在塗佈器杯（狀物）5 3之外周， 配設有外面蓋5 4。 VU/ER單元2 3D乃配設有下室6 1及設成覆蓋 其上面，而維持內部處理室成氣密用之上室6 2。下室 6 1則設有要載置基板G用之台6 3，並在該台6 3配設 要交接基板G用之銷（未圖示）形成可突出埋設。而該等 銷乃配置於可抵接於基板G之處理區域以外之部分的位置 ，以令對於處理基板不會產生影響。 下室6 1中央部配設有排氣口 6 4，而連通於該排氣 口 6 4之排氣管6 5，將會被連接於各種之排氣泵（未圖 示）。該排氣口64乃相當於前述之VU/ER單元23 A、 23B、23C的第1排氣口43，而在VU/ER 單元23D，並未配設第2及第3之排氣口46、 68。 做爲上室6 2，可採用使用於前述之VU/ER單元2 3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -22- 504844 A7 B7 五、發明説明（2〇 ) A〜23C之上室41、 66、 71等，而在圖6中，顯 示有圖2所示之管嘴4 7的位置。 (請先閲讀背面之注意事項再填寫本頁) 從抗蝕劑塗佈處理單元（CT) 2 2搬運基板G至 VU/ER單元2 3D乙事，係使用搬運臂8 1來沿著導 軌8 3來進行。而在VU/ER單元2 3D之處理，係能 與上述之VU/E R單元2 3 A同樣地來實施，且在處理 後，基板G乃由主搬運裝置1 8 (參照圖1 )來輸送至加 熱處理單元（Η P )。 如上述，抗蝕劑塗佈處理單元（CT) 2 2和VU/ E R單元2 3 D所構成之裝置，係較申請人在日本國專利 特願平 10 — 233599 號、同 10 — 369306 號 所揭示之串聯配置所謂之抗蝕劑塗佈處理單元（C Τ ) 2 2和真空乾燥單元（VU)及周緣抗蝕劑淸除（去除） 單元（E R )的三部相異之單元來進行一連串之處理的裝 置，可縮小設空間約2 / 3，又能在基板之整個周（邊） 緣予以同時進行，且在淸除周緣後，並不需要移動基板至 要進行高真空下之處理室，因此，可意圖縮短處理時間。 經濟部智慧財產局員工消費合作社印製 以上，雖對於本發明之實施形態加以說明，但本發明 並非僅限定於前述實施形態者。例如做爲基板形狀雖說明 了有關長方形者，但基板形狀並非有所限定’也可對於圓 形等之種種基板加以使用。本發明之處理裝置也可適合於 使用在L C D基板之彩色濾色器用色彩抗蝕劑之塗佈、顯 像系統、或半導體晶圓之抗蝕劑塗佈、顯像系統等。又做 爲基板雖說明有關L C D基板’但也可使用於有關半導體 -23- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 504844 A7 B7 五、發明説明（21 ) 晶圓、CD基板等之其他基板。 (請先閲讀背面之注意事項再填寫本頁) 如上述，依據本發明之處理裝置’因令抗蝕（劑）膜 在適當地成階段性地被乾燥之狀態下來使基板輸送之其後 之熱處理過程，使得可抑制在熱處理過程等時之對基板產 生轉印（複印）之情事，因此，可抑制不良品之產生而可 意圖所謂增進生長率（良率）之發揮優異功效。又由於真 空乾燥單元和進行淸除基板周（邊）緣部之抗飩劑用之周 緣抗蝕劑淸除單元予以構成一體化，因而，可意圖裝置之 小型化。再者，容易構成爲可同時在基板周緣整體進行淸 除抗蝕劑，使得該狀況時，可縮短淸除抗蝕劑的處理時間 之同時，可意圖縮短生產節拍，因此，可發揮所謂意圖增 進生產效率之顯著功效。 〔圖式之簡單說明〕 圖1係顯示要適用將成爲本發明之對象的處理裝置之 抗飩劑塗佈、顯像系統的平面圖。 圖2係顯示本發明之處理裝置的一實施形態之剖面圖 經濟部智慧財產局員工消費合作社印製 〇 圖3係圖2所記載之處理裝置的平面圖。 圖4係顯示本發明之處理裝置的另一實施形態之剖面 圖。 圖5係顯示本發明之處理裝置的再另一實施形態之剖 面圖。 圖6係顯示本發明之處理裝置的再另一實施形態之剖 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） -24- 504844 A7 B7 五、發明説明（22 ) 面圖。 圖7係圖6所記載之處理裝置的剖面圖。 (請先閲讀背面之注意事項再填寫本頁) 圖8 ( a )係顯示使用習知之處理裝置時的處理所需 要時間之圖表圖，圖8 ( b )係顯示使用本發明之處理裝 置時的所需要時間之圖表圖。 〔符號說明〕 22 抗鈾劑塗佈處理單元 23、 23A〜23D VU/ER單元 41、 66、 71 上（處理）室 42、 6 7、72 下（處理）室 4 3 第1排氣口 44 升降機構 4 5 台 4 6 第2排氣口 47,69 管嘴 49、94 淸除周（邊）緣器 經濟部智慧財產局員工消費合作社印製 6 8 第3排氣口 73.75 貫穿孔 74、 76、 85、 87、 95 供應管 8 6、8 8、9 6 孔部 91、 92、 93 處理室 G 基板 -25- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）504844 A7 B7 V. Description of the Invention (9) Brushing and washing are performed in the cleaning unit (SCR), and after any one of the heat treatment units (ΗP) in the treatment group 26 is heated and dried (dried), it is processed. Any of the cooling units (C 0 L) of group 2 7 are cooled. Then, the substrate G is transferred to the middle section 2a. In order to improve the fixation of the resist, the upper layer of the adhesion processing unit (AD) is subjected to a hydration treatment (HMDS treatment) and cooled in the lower cooling unit (COL). After that, a resist is applied to the anti-corrosive coating processing unit (CT) 2 2, and then the vacuum drying of the resist film under a low vacuum degree is sequentially performed on the VU / ER unit 2 3. The resist on the periphery (edge) of the substrate G and the resist attached to the back surface of the substrate G (hereinafter, this process will be referred to as "remaining periphery"), and the resist film is subjected to high vacuum Vacuum dry. In addition, the term "elimination peripheral edge" refers to a method including erasing a resist on the periphery (peripheral edge portion) of the surface on which the uranium-resistant film is formed on the substrate G, and removing the resist adhered to the side surface of the substrate G and the back surface of the substrate G. deal with. Thereafter, the substrate G is subjected to a pre-baking process in one of the heating units (HP) in the middle section 2b, and is cooled in the lower cooling unit (COL) in the processing group 29 or 30. Next, the substrate G is transferred from the relay section 16 to the exposure device by the main transfer device 19 and the transfer section 3, and is exposed to a predetermined pattern there. Then, the substrate G is carried into the processing section 2 by the transfer section 3 again, and if necessary, the heating processing unit (HP) of any of the processing groups 3 1, 32, and 33 in the rear section is subjected to post-exposure drying After processing, development processing is performed in any of the development processing units (DEV) 24a, 24b, 2 4c to form a predetermined circuit pattern. The developed substrate G will be in any one of the heat treatment sheets in the second section 2c (please read the precautions on the back before filling this page). Order printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs. National Standard (CNS) A4 specification (210X297 mm) -12- 504844 A7 B7 V. Description of the invention (10) Yuan (HP) After the post-drying treatment, it is cooled in any cooling unit (C0L), And the main transport device 19, 18, 17 and the transport (please read the precautions on the back before filling this page) transport mechanism 10 to accommodate the predetermined cassette on the cassette station 1. Next, a V U / E R unit according to an embodiment of the present invention will be described in detail. Fig. 2 is a cross-sectional view showing a configuration of the VU / ER unit 23, VA / ER unit 23A. On the VU / ER unit 2 3 A, the upper chamber (lid) 4 1 which is set to rise and fall freely is lowered from above to the fixed lower chamber 4 2, and the upper and lower chambers 41 and 41 are tightly adhered by the sealing material 4 8. 42, can be formed as a processing chamber 91. Printed in the lower room 4 2 by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The table 4 5 is equipped with a substrate G and a lifting mechanism 4 4 (only the lifting rod is shown) is arranged to lift freely. A nozzle 50 for back washing is arranged at the lower periphery. The rear cleaning nozzle 50 has a hole 8 8 formed therein, and the processing liquid supply pipe 8 7 is arranged to communicate with the hole 8 8 ′ so that the processing liquid can be opened from the upper end of the hole 8 8. position. That is, the "backside cleaning nozzle 50" is used for erasing the resist on the back surface of the substrate G mainly when the peripheral edge is erased. The bottom wall of the lower chamber 4 2 is provided with a first exhaust port 4 3 'and the side wall is provided with a second exhaust port 4 6. The first exhaust port 4 3 is mainly responsible for exhausting the treatment chamber 91. However, when the peripheral edge is removed, a part of the processing liquid such as a thinner is discharged. The second exhaust port 4 6 is mainly provided for the purpose of discharging the treatment liquid at the time of removing the peripheral edge ', but also has the function of an exhaust treatment chamber 91. The second exhaust port 46 is ideally set to be approximately the same as the substrate. The paper size applies the Chinese National Standard (CNS) Λ4 specification (210X297 mm) _ 13_ 504844 A7 ___B7_ V. Description of the invention (Μ) A high-level position, That is, the periphery of the outer periphery (edge) of the substrate G may be disposed not in the lower chamber 4 2 but in the upper chamber 41. The upper chamber 41 is, as shown in the plan view of FIG. 3, a peripheral edge remover 49, which is provided along the periphery (perimeter) of the substrate G so as to supply a processing liquid for erasing the peripheral edge along the peripheral edge of the substrate G. The wiper peripheral device 49 has a nozzle 47 for discharging the processing liquid, and the nozzle 47 is freely raised and lowered by an actuator (opener) 89 built in the wiper peripheral device 49. In addition, the peripheral edge removing device 49 in the VU / ER unit 2 3 A refers to an anti-etching agent mainly used for erasing the peripheral edge portion of the surface on which the resist film is formed on the substrate G and the side surface of the substrate G. As shown in FIG. 2, the nozzle 47 is formed with a hole portion 86, and the processing liquid supply pipe 85 is arranged to communicate with the hole portion 86. The form of the treatment liquid discharge outlet of the nozzle 47, that is, the shape of the hole portion 86, has a continuous slit shape or a hole-shaped discharge outlet at a predetermined interval. Furthermore, as the nozzles 47, a plurality of nozzles which are continuously arranged and have one or more spouts may be used. Next, a method of using the U V / ER unit 23A described in FIG. 2 and FIG. 3 will be described. First, the upper chamber 4 1 ′ is raised, and the stage 4 5 is also raised to a position higher than the periphery of the lower chamber 4 2, and the resist is transferred from the resist coating unit (CT) 2 2 to form a resistance. After the substrate G is etched and the substrate G is placed on the stage 45, the stage 45 and the substrate G are lowered. In addition, regarding the placement of the substrate G on the stage 45, the substrate G can also be transferred to the stand-by (stand-by) state by transferring the substrate G to a predetermined position to transfer the substrate G, and return the substrate G to the return transport mechanism (please (Please read the notes on the back before filling this page) Order the paper printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -14- 504844 A7 B7 12) After reaching the original position, Fang lowered the platform 4 5 and so on. Next, lower the upper chamber 41 to form the processing chamber 9 1, and exhaust from the first row (please read the precautions on the back before filling in this page) to the exhaust port 4 3 and / or the second exhaust port for processing. The inside of the chamber 9'1 becomes a predetermined decompression (vacuum) environment, for example, a low vacuum state of about 2 to 10 Torr and maintained for a predetermined time. When the substrate G is subjected to a vacuum drying process in such a low vacuum environment, the volatile components contained in the resist film will gradually evaporate, so that the resist film can be formed appropriately without affecting the underside of the resist film. Drying makes it possible to effectively prevent the transfer onto the substrate G as described later. When the processing in the low-vacuum environment is completed, the actuator 8 9 is caused to move and the standby nozzle 4 7 near the bottom of the upper chamber 41 is lowered to a predetermined position, and the processing liquid for removing the peripheral edge is supplied. The supply pipe 85 is ejected from the opening at the lower end of the hole portion 86. On the other hand, the processing liquid is supplied to the supply pipe 8 7 disposed at the nozzle 50 for back washing, and from above the hole portion 8 8 The processing liquid is discharged from the opening portion, and the peripheral edge of the substrate G is completely wiped around the periphery (four sides) at the same time. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs To eliminate the surrounding environment, you can use any state that is maintained under reduced pressure to a low vacuum state, or restored to a normal pressure (normal pressure) state. As described above, when the peripheral edge is to be erased, the resist film formed on the substrate G is properly dried, so that the resist can be easily removed (removed). In addition, when the peripheral edge is removed, if the second exhaust port 46 is mainly used to recover the processing liquid, the amount of the processing liquid flowing into the first exhaust port 43 can be reduced, so that the intention can be reduced. Maintenance equipped in the first row -15- This paper size applies to Chinese national standards (CNS > A4 size (210X297 mm) 504844 A7 B7 13 V. Description of the invention (Exhaust pump of exhaust system of port 4 3 (not shown) (Please read the precautions on the reverse side before filling out this page) After the final treatment liquid has been discharged, the processing chamber 91 is made into, for example, 0 · 1 ~ 2 Τ 〇rr The left and right high vacuum conditions are maintained for a predetermined time. Since the treatment is performed under such a high vacuum, the treatment liquid can be evaporated, and the evaporation of the volatile components contained in the anti-uranium film can be promoted. In this condition, due to The resist film has been dried under low vacuum in the previous stage. Therefore, even if it is maintained in a high vacuum environment, it will not cause a sudden (steep) evaporation of volatile components, which will adversely affect the resist film. ,dimension When the nozzle 4 7 is kept close to the ejection position of the substrate G to exhaust the processing chamber 9 1 into a low vacuum or a high vacuum, a strong airflow may be generated in the substrate G and the nozzle 4 at the beginning of the exhaust. 7 to cause a change in the thickness of the uranium-resistant film at the outer periphery of the substrate G. Therefore, when the pressure in the processing chamber 9 1 is to be reduced, it is desirable to raise the nozzle 4 7 in advance to enlarge The substrate G is spaced so that the air flow generated by the exhaust gas does not affect the resist film. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. After the dry substrate G is completed in a high vacuum environment, the processing chamber 9 is ordered. 1 Return to atmospheric pressure, raise the upper chamber 41 and the stage 4 5 and transfer the substrate G to the heat treatment unit (Η P) to be heat treated. The resist film of the substrate G should be in the heat treatment unit (HP). Because the two-stage drying process of so-called drying under low vacuum and drying under high vacuum has been obtained, even if it is heated, the component formation does not suddenly evaporate. Furthermore, the aforementioned drying under low vacuum and High vacuum The following drying can also be carried out in the reverse order. For example, the drying after the resist coating is applied at the high vacuum. This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm). -16-504844 A7 ___ B7_ V. Invention Note (M) (Please read the precautions on the back before filling in this page), and vacuum drying after removing the periphery is performed under low vacuum. It is also possible to perform under vacuum before removing the periphery. The drying process is performed to remove the periphery, and then the drying process is performed under high vacuum. However, in this state, it is desirable to pay attention to the time until the high vacuum is set to be longer than when the drying under low vacuum has been performed. So that the volatile components in the resist film do not erupt suddenly (suddenly). The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed this way. Before the present invention is subjected to heat treatment, the resist must be dried by vacuum drying. The reason is that after heat treatment, transfer of The biggest reason for the substrate G is that the temperature experienced by the substrate G, the lift pin (lift pin), etc. will be different from other non-contact parts, so that the film thickness of the resist will correspond to The shape of the lifting pins and the like changes, and the reason for the transfer after exposure and development processing can be thought of as the line width of the circuit pattern formed on the substrate G will correspond to the shape of the lifting pins and so on. Caused by changes. That is, if the resist film is properly dried before the heat treatment according to the above-mentioned process, the fluidity of the resist will be reduced without causing the components to evaporate suddenly due to heating, making the resist It is difficult to change the film thickness of the agent, so that the transfer on the substrate G can be avoided. In this way, according to the VU / ER unit 2 3 A, not only the transfer to the substrate G can be effectively prevented and the generation can be promoted, but also the vacuum drying of the resist film formed on the substrate G under low vacuum can be performed, and The drying of the resist film in a high space can be performed on the placement substrate G at a predetermined position, that is, one place, so space saving and miniaturization of the device can be intended. There is no need to move the substrate G, and it is not necessary to scan the paper to remove the paper from the application. (0 called 厶 4 threats (2 敝 297 mm) 71 504844 A7 B7 V. Description of the invention (15) The nozzle can be traced, so that the processing time can be shortened, and the production cycle time can be shortened. In addition, the heat treatment in the plutonium P unit is also intended to shorten the drying because the uranium-resistant agent has been dried in advance. That is, as shown in FIG. 8 (a), in forming a conventional system having a vacuum drying device and a purging perimeter, a processing time of, for example, 40 seconds performed by the vacuum drying device is required, and the drying from the vacuum is performed. The processing time of the device to the peripheral device is 10 seconds and the processing time of the peripheral device is 50 seconds. The total processing time is 100 seconds. As shown in Figure 8 (b), this When the VU / ER unit 2 3A is invented, not only the transportation time as described above is not required, but also an overlap between the vacuum drying process and the erasing periphery. Therefore, the total processing time becomes, for example, about 40 seconds. The degree will be described with reference to FIG. 4. Another embodiment of the VU / ER unit. The VU / ER unit 2 3 B shown in FIG. 4 uses the same lifting mechanism 4 4 and the stage 4 5 as those used in the VU / ER unit 2 3A, and the lower chamber. 6 7 A rear cleaning nozzle 50 is provided. In addition to the first exhaust port 43 and the second exhaust port 46, a third exhaust port 6 is formed along the outer periphery (side) of the substrate G. 8 in the outer peripheral portion of the bottom wall of the lower chamber 6 7. The third exhaust port 68 is mainly used to supply nozzles 69 and 50 from the nozzles 69 and 50 for the treatment liquid to be used for the removal of peripheral edges. The tasker who sucks out the treatment liquid has the ability to reduce the amount of the treatment liquid flowing into the first exhaust port. As a result, the exhaust system related to the exhaust system of the first exhaust port 43 can be reduced. The load of maintenance and so on °, and then 'also (please read the precautions on the back before filling out this page). Order the paper printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. (Centi) -18-504844 A7 B7___ 5. Description of the invention (16) The second exhaust port 4 6 can be used instead of the third exhaust port 6 8 as the main treatment The upper chamber 6 and 6 are formed to be freely raised and lowered, so as to contact the lower chamber 6 7 by the sealing material 4 8 to form a processing chamber 9 2. In addition to the peripheral edge 9 provided in the upper chamber 6 6 4 is provided with a nozzle 6 9 along the periphery of the substrate G, and the nozzle 6 9 is provided as a processing liquid supply pipe 9 5 and communicates with a hole portion formed in the nozzle 6 9. The hole portion 9 9 of the nozzle 6 9 The morphology can be made the same as that of the aforementioned VU / ER unit 2 3A. When the nozzle 6 9 is not discharging the processing liquid, it is stored in the position shown by the dotted line in the figure, and it is to be implemented. When removing the peripheral edge, the cylinder 97 is rotated by a predetermined angle from the dotted line position (90 ° at the nozzle), and is disposed at the position shown by the solid line to form a dischargeable processing liquid. When the rotary driving nozzle 6 9 is made in this way, the nozzle 6 9 is not required to be raised and lowered, and in the decompression processing chamber 9 2, the nozzle 6 9 can be emptied to the aforementioned dotted line to make the nozzle 6 9 Since it is wide from the substrate G, the influence of the air flow on the resist film during exhaust can be reduced. Fig. 5 is a sectional view showing still another embodiment of the V U / E R unit. In the VU / ER unit 2 3 C, through-holes 7 3 are formed in the upper chamber 71 at a predetermined interval to fit on the outer periphery of the substrate G, and the through-hole 7 3 is connected to a supply pipe 74 for the processing liquid. The supply of the treatment liquid may be controlled by, for example, a shut-off valve (stop valve) 7 7. That is, the through-hole 7 3 can be used as a structure for generating the function of the discharge nozzle for removing the treatment liquid for peripheral use. In this way, when the upper chamber itself becomes the processing liquid supply mechanism, this paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm) (please read the precautions on the back before filling this page). Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives-19-504844 A7 B7 V. Description of the invention (17) will be different from the aforementioned VU / ER units 23A, 23B, and there is no need for additional management of complicated actions The mouths 4 7, 69 make it possible to reduce the thickness of the above 7 1 itself in the up-down direction. In the bottom wall of the lower chamber 72, through-holes 7 5 ′ are formed along the outer periphery of the substrate G at predetermined intervals, and a supply pipe 7 6 for processing liquid is connected to the through-holes 7 5. The supply pipe 76 is also provided with a shut-off valve 78 to control the supply of the processing liquid. Therefore, the through-hole 75 can be generated when removing the periphery, especially when the back surface of the substrate G is removed. The function of the anti-tibium treatment solution to spit out. Therefore, in the lower chamber, there is no need to provide a space for the aforementioned back-washing nozzle 50, so that the lower chamber 72 itself can be made thin. When the upper and lower chambers 71 and 72 are used as described above, the entire device can be made thin and simple, and the processing chambers 9 3 formed by the upper and lower chambers 7 1 and 7 2 can also be made small. So that the exhaust time can be shortened, and vacuum pumps can also be used for small ones. In the lower chamber 72, only the second exhaust port 46 is formed. Therefore, in order to reliably discharge the processing liquid discharged from the substrate G to the outside (outside), the upper and lower chambers 7 1 and 72 will be provided so that the portion holding the substrate G can have a short wall thickness from the substrate G. . For this reason, when the uranium-resistant film is vacuum-dried immediately after the substrate G is formed, it is desirable to make the exhaust velocity small at the beginning so that the air flow generated by the exhaust gas does not change the thickness of the resist film. However, even in this state, due to the small volume of the processing chamber 93, the exhaust time will not form a longer unsuitable situation compared with the aforementioned VU / ER unit 2 3 A, 23B. . This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling out this page) ** ιτ MW. Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economics-20- 504844 A7 B7 V. Description of the invention (18) Although the above-mentioned VU / ER units 23B and 23C are made to have a shape around the nozzle for supplying the treatment liquid to the VU / ER unit 2 3 A and the shape of the discharge path of the treatment liquid, etc. Different, but the substrate G can be processed in the same way as the VU / ER unit 2 3 A. Regarding the above 11./£11 unit 2 3 厶 ~ 2 3 (:, the exhaust port for exhausting the processing chamber or the exhaust of the processing liquid, as long as at least the first to the third exhaust ports are formed One of 43, 46, and 68 is acceptable. Although the VU / ER unit 2 3A to 2 3 C is configured with a table on the lifting mechanism and the lower chamber is fixed, the shape and structure of the table and the lower chamber, There is no restriction as long as it is within the range where the handover can be easily performed. That is, it is not necessary to use a lifting mechanism for the table, and it can also be configured as a fixed table so that the lower chamber can be moved up and down, or it can be arranged to be protruding or buried. If the shape of the transfer arm of the substrate or the method of transferring the substrate between the transfer arm and the stage becomes appropriate, the stage and the lower chamber can be fixed to each other. The above process can be used as a treatment related to the present invention. Although the embodiment of the device is described by taking various VU / ER units as examples, the VU / ER unit can also be configured as shown in the plan view of FIG. 6 and the cross-sectional view of FIG. 7, and used in the previous process. The resist coating unit (CT) 2 2 is connected to form one As shown in FIG. 6 and FIG. 7, the resist coating processing unit (CT) 2 2 has: a rotation chuck 5 1 that can be horizontally rotated by holding and holding the substrate G; and surrounds the rotation chuck 5 1 The upper end part, which surrounds the substrate G held by the rotating chuck 51 and is held at the bottom, and the bottom part is an open bottomed cylinder. The size of this paper is applicable to China National Standard (CNS) A4 (210X297 mm) {Please Read the precautions on the back before filling this page.) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives. 504844 A7 B7 V. Description of the invention (19) Rotating cup 5 2; Close the lid of the upper opening of the rotating cup 5 2 (not shown) (Illustrated); and an applicator cup (object) 5 3 fixedly arranged to surround the outer periphery of the rotating cup 5 2. The resist coating processing unit (CT) 2 2 has a nozzle arm 5 5 for dropping the resist on the substrate G, and a nozzle 5 6 for discharging the resist is disposed on the nozzle. Arm 5 5 front end. When the resist is dropped, the tip of the nozzle arm 55 can be moved to the center of the substrate G. When the resist is dropped, the cover body avoids and the upper part of the rotating cup 5 2 is opened, and the substrate G is rotated by the rotating chuck 51, and when the resist is diffused, the substrate G is rotated by the rotating chuck 5 1 At the same time, the rotating cup 5 2 with the lid closed is rotated. Furthermore, an outer cover 5 4 is provided on the outer periphery of the applicator cup (object) 5 3. The VU / ER unit 2 3D is provided with a lower chamber 61 and an upper chamber 62 which is provided so as to cover the upper surface thereof, while maintaining the internal processing chamber to be airtight. The lower chamber 61 is provided with a stage 6 3 for mounting the substrate G, and a pin (not shown) for transferring the substrate G is disposed on the stage 6 3 so as to be protruded and buried. These pins are arranged at positions that can abut the processing area of the substrate G so as not to affect the processing of the substrate. An exhaust port 64 is provided at the center of the lower chamber 61, and an exhaust pipe 65 connected to the exhaust port 64 is connected to various exhaust pumps (not shown). This exhaust port 64 is equivalent to the first exhaust port 43 of the aforementioned VU / ER unit 23 A, 23B, 23C, and the second and third exhaust ports 46 are not provided in the VU / ER unit 23D. , 68. As upper room 62, you can use the VU / ER unit used in the aforementioned 2 3 This paper size applies to Chinese National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling this page) Order Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-22- 504844 A7 B7 V. Description of the Invention (20) A ~ 23C upper rooms 41, 66, 71, etc., and in Figure 6, there are shown in Figure 2 Position of nozzles 4-7. (Please read the precautions on the back before filling in this page.) From the resist coating processing unit (CT) 2 2 to transfer the substrate G to the VU / ER unit 2 3D, the transfer arm 8 1 is used to move along the guide rail 8 3 to proceed. The VU / ER unit 2 3D processing can be carried out in the same way as the above-mentioned VU / ER unit 2 3 A, and after the processing, the substrate G is transported to the main conveying device 18 (see FIG. 1). Heat treatment unit (Η P). As described above, the device composed of the resist coating processing unit (CT) 2 2 and the VU / ER unit 2 3 D is a device which is more than the applicant in Japanese Patent No. Hei 10-233599 and the same as No. 10-369306. A series of three different units of a so-called resist coating processing unit (C T) 2 2, a vacuum drying unit (VU), and a peripheral resist erasing (removing) unit (ER) are disclosed in series. The processing device can reduce the installation space by about 2/3, and can be performed simultaneously on the entire periphery (edge) of the substrate. After removing the periphery, it is not necessary to move the substrate to the processing chamber under high vacuum. Therefore, it is possible to shorten the processing time. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Although the embodiments of the present invention have been described above, the present invention is not limited to those described above. For example, although the rectangular shape has been described as the shape of the substrate, the shape of the substrate is not limited. It can also be used for various substrates such as a circular shape. The processing device of the present invention can also be applied to a color resist coating, imaging system, or a semiconductor wafer resist coating, developing system, and the like, which are used for a color filter on an LCD substrate. It is also used as a substrate to explain the LCD substrate, but it can also be used for related semiconductors. 23- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 504844 A7 B7 V. Description of the invention (21) Wafer, CD substrate and other substrates. (Please read the precautions on the back before filling in this page.) As mentioned above, the processing device according to the present invention 'causes the resist (resist) film to be dried in a suitable stage, and then the substrate is transported. The heat treatment process can suppress the occurrence of transfer (copying) to the substrate during the heat treatment process, etc. Therefore, the occurrence of defective products can be suppressed and the so-called enhanced growth rate (yield) can be intended to exert excellent effects. In addition, since the vacuum drying unit and the peripheral resist erasing unit for anti-repellent agent for erasing the peripheral edge of the substrate are integrated, it is possible to reduce the size of the device. In addition, since it is easy to configure the resist removal on the entire periphery of the substrate at the same time, in this case, the processing time of the resist removal can be shortened, and the production cycle can be shortened. Significant effect of production efficiency. [Brief Description of the Drawings] Fig. 1 is a plan view showing an anti-thorium coating and developing system to which the processing apparatus to be the subject of the present invention is applied. FIG. 2 is a cross-sectional view showing an embodiment of the processing apparatus of the present invention, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. FIG. 3 is a plan view of the processing apparatus described in FIG. 2. Fig. 4 is a sectional view showing another embodiment of the processing apparatus of the present invention. Fig. 5 is a sectional view showing still another embodiment of the processing apparatus of the present invention. Fig. 6 is a sectional view showing still another embodiment of the processing device of the present invention. The paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297 mm) -24-504844 A7 B7 V. Description of the invention (22). FIG. 7 is a cross-sectional view of the processing apparatus shown in FIG. 6. (Please read the precautions on the back before filling this page) Figure 8 (a) is a chart showing the time required for processing when using a conventional processing device, and Figure 8 (b) is a chart showing the time when using the processing device of the present invention Chart of required time. [Description of Symbols] 22 Uranium-resistant agent coating treatment units 23, 23A to 23D VU / ER units 41, 66, 71 Upper (treatment) chamber 42, 6 7, 72 Lower (treatment) chamber 4 3 First exhaust port 44 Lifting mechanism 4 5 units 4 6 2nd exhaust port 47,69 Nozzles 49, 94 淸 Except Zhou (edge) edge device Printed by the Consumer Cooperatives of Intellectual Property Bureau of the Ministry of Economy 6 8 3rd exhaust port 73.75 Through hole 74 、 76, 85, 87, 95 Supply tubes 8 6, 8 8, 9 6 Holes 91, 92, 93 Processing chamber G substrate-25-This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm)