TW504739B - Developing processing apparatus and developing processing method - Google Patents
Developing processing apparatus and developing processing method Download PDFInfo
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- TW504739B TW504739B TW090119991A TW90119991A TW504739B TW 504739 B TW504739 B TW 504739B TW 090119991 A TW090119991 A TW 090119991A TW 90119991 A TW90119991 A TW 90119991A TW 504739 B TW504739 B TW 504739B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
- G03F7/3064—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the transport means or means for confining the different units, e.g. to avoid the overflow
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
知 沖 為 在 連 504739 五、發明説明(1 <發明所屬技術領域及其領域之習知技術> 本發明係關於一種顯像處理裝置及顯像處理方法,係 例如在業經曝光處理之液晶顯示器(LCD)用玻璃基板與半 導體晶圓等之基板,供給一定之顯像液進行顯像處理。 在液晶顯示器(LCD)與半導體晶片之光蝕法製程中, 在被洗淨處理之LCD基板與半導體晶圓等之基板塗敷光敏 電阻形成保護膜,以-定之型式曝光保護膜,將此等進行 所謂顯像處理之-連處理。其中洗淨處理、保護膜塗敷處 理、顯像處理,係使用-般被稱作旋轉型之液處理裝置, 在面内一面使基板旋轉一面進行供給一定之處理液。 例如,在LCD基板之顯像處理中,將業經曝光處理之 基板固定於旋轉吸盤等,將顯像液盛滿於基板而形成浸置 液以進行顯像反應,其次經過一定時間之後,在約略盘使 基板旋轉同時,開始沖洗液的供給甩開顯像液與沖洗^, 其後採用停止沖洗液的供給,以高速使基板旋轉進行所謂 旋轉乾燥之方法。 在進行如此之顯像處理之!台之顯像處理單元,習 用以供給顯像液之顯像液吐出喷嘴及用以供給沖洗液之 洗噴嘴分別僅被設置1個。 / 但是,近年來’配合被㈣之簡膜的種類多樣化 必須使用不同種類與濃度之顯像液的場合逐漸增加。 此,在習知之1顯像處理單元q顯像液吐出噴嘴之^造, 改變使用每i顯像液就必須進行顯像液吐出噴嘴之洗ζ 續的處理變成困難使生產性降低。另外,由於幻個之顯 本紙張尺度適财_家標準(哪)峨格(2歡297公Zhichong 504739 V. Description of the Invention (1 < Technical Field to which the Invention belongs and Known Technology in the Field > The present invention relates to a development processing device and a development processing method, such as an exposure-treated liquid crystal For display (LCD) glass substrates and substrates such as semiconductor wafers, a certain amount of developing liquid is supplied for development processing. In the process of photolithography of liquid crystal displays (LCD) and semiconductor wafers, the LCD substrates are cleaned and processed. Applying a photoresistor to a substrate such as a semiconductor wafer to form a protective film, exposing the protective film in a fixed pattern, and subjecting these to a so-called developing process, which includes a cleaning process, a protective film coating process, and a developing process It is a liquid processing device generally called a rotary type, which supplies a certain processing liquid while rotating the substrate in the plane. For example, in the development process of the LCD substrate, the substrate subjected to the exposure processing is fixed to the rotation. Suction cups, etc., are filled with a developing solution on the substrate to form an immersion solution to perform a developing reaction. After a certain period of time elapses, the substrate is rotated at the same time as the approximate disk. Start the supply of the rinse solution, shake off the developer solution and rinse ^, and then stop the supply of the rinse solution, and then rotate the substrate at high speed to perform the so-called spin-drying method. In such a development process, the development processing unit There are only one developing liquid discharge nozzle and one washing nozzle used to supply the developing solution. / However, in recent years, the type of the simple film used to cope with the quilt must be diversified. The concentration of the developing solution is gradually increased. Therefore, in the conventional 1 developing processing unit q, the developing solution ejection nozzle is changed, and the use of the developing solution ejection nozzle washing must be performed every time the imaging solution is changed. Processing becomes difficult to reduce productivity. In addition, due to the obvious size of the paper, the paper size is suitable for money_ 家 标准 (哪) 格 (2 欢 297 公公
訂— (請先閲讀背面之注意事項再填寫本頁) 4 504739 五、發明説明( 液吐出喷嘴辦理多數之顯像液,所以擔心會因異種顯像液 之混合生成固形成分與特性降低,伴隨此等而發生微粒的 附著與顯像不良。 進一步,在絲«財,隨著被形成料之微細化 與複雜化的進行,可以更均—的進行顯像處理,減低顯像 液的殘潰形成良好之型式之顯像處理裝置及顯像處理方法 之開發要求正逐漸高涨。 <發明欲解決之課題> 本發明寥於上述諸事項,其目的係提供—種顯像處理 裝置及顯像處理方法,即使在使用多數種之顯像液的場合 中,可以做成連續的處理提高處理效率,另外,作成可 均一化顯像處理,不但使顯像液的殘渣減低亦可以得到 品質的基板。 若依據本發明之第1觀點,提供一種顯像處理裝置, 包含有:保持裝置,係用以保持基板;與,顯像液供給機 構,係用以供給一定之顯像液於被保持於前述保持裝置之 基板;而前述顯像液供給機構更包含有:多數之顯像液吐 出喷嘴,係用以吐出一定顯像液;丨個噴嘴保持臂,係用 保持前述多數之顯像液吐出喷嘴;及,升降機構,係可 個別地調節前述多數之顯像液吐出噴嘴之高度。 若依據本發明之第2觀點,提供一種顯像處理裝置, 包含有.保持裝置’係用以保持基板;顯像液供給機構, 係用以供給一定之顯像液於被保持於前述保持裝置之基 板;及,沖洗液供給裝置,係用以供給沖洗液於被塗敷^ 以 以 以 (請先閲讀背面之注意事項再填寫本頁) •訂· 5 五、發明説明(3 ) 像液之基板上;而前述顯像液供給機構,包含有··浸置液 $成用喷嘴,係用以溢滿_定之顯像液於被保持於前述保 持裝置之基板;與,噴霧噴嘴,係用以喷塗供給-定之顯 像液於被保持於前述保持裝置之基板;而前述沖洗液供給 裝置,包含有:預先沖洗噴嘴,係在朝被保持於前述保持 ,置之基板完成塗敷_定之顯像液之後,用以繼續供給一 疋之沖洗液於基板;與,沖洗喷嘴,制讀前述預先沖 洗喷嘴在完成供給沖洗液之後進行—定之沖洗液的供給; 又刖述噴霧噴嘴與前述預先沖洗喷嘴,係被安裝於保 持喷嘴之同一之喷嘴保持臂。 若依據本發明之第3觀點,提供一種顯像處理方法, 係一種業經曝光處理之基板的顯像處理方法,包含有:第五 製程,係進行滿液將一定之顯像液供給於被载置成略平行 之基板;第2製程,係對被溢滿一定之顯像液之基板,進行 -定之顯像液的噴塗供給;及,第3製程,係在前述第2製 程中,在顯像液之完成喷塗供給後繼續對基板供給沖洗液。 若依據如此之顯像處理裝置及顯像處理方法,由於在 1台之顯像處理裝置(顯像處理單元)設置多數顯像液吐出 喷嘴,用以將顯像液塗敷於基板,所以在需要供給不同種 類及/或不同濃度之顯像液的場合,形成可以以替換使用之 喷嘴來應付。依此等與僅設置之喷嘴的場合相比較,不 會錯失進行噴嘴洗淨的時間,提昇生產性,另外,藉不同 顯像液之混合減低特性降低與發生微粒,形成可以維持高 品質的基板。 A4規格(210X297公釐) 本紙張尺度適用中國國家標準(CNS) /jy 五、發明説明(4 ) b另外,在基板上在形成顯像液浸置液後使用喷霧 嘴’藉—面給予壓力(衝擊)—面進行供給顯像液,由於顯 像液浸置液被授拌,顯像處理形成更均一的進行藉此等 提昇顯像特性,得到更明獠均一之顯像型式,而且; 像時間被短縮。 ^ ^ 更進一步,在預先沖洗噴嘴被安裝於與顯像液吐出噴 嘴相同之喷嘴保持臂的場合,由於在顯像液塗敷後不空出 一髮之_就可以供給沖洗液,所以在使用喷霧噴嘴進行 均-之顯像反應後立刻供給沖洗液,藉使顯像反應停止, 得到提昇顯像特性、明白的形成均一之型式、與縮短顯像 處理的時間之效果,進一步得到顯像液殘渣被減低之高品 質的基板。 <發明的構造及作用> 以下,參照添付圖面,針對本發明之實施型態詳細的 加以說明。 第1圖為表示具有本發明之顯像處理裝置(顯像處理單 兀)(DEV)24a〜24c之LCD基板之保護膜塗敷•顯像處理系 統100之平面圖。 保羞膜塗敷·顯像處理系統1 〇〇,係包含有匣區1、處 理部2、與界面部3。該匣區卜係用以載置收納多數之][^1) 基板(基板)G之匣c ;處理部2,係具有用以對基板G實施包 含保濩膜塗敷及顯像之一連處理之多數之處理單元;界面 部3,係用以在與曝光裝置(未圖示)之間進行基板〇之收 付;又在處理部2之兩端,分別配置匣區1及界面部3。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Order — (Please read the precautions on the back before filling out this page) 4 504739 V. Description of the Invention (The liquid ejection nozzle handles most of the imaging liquid, so I am worried that the solid content and characteristics will be reduced due to the mixing of heterogeneous imaging liquids. In this way, the adhesion of fine particles and poor development of the image occur. Furthermore, as the material to be formed becomes finer and more complicated in the silk, the development process can be more uniformly performed to reduce the residue of the developing solution. The development requirements of a development processing device and a development processing method that form a good type are gradually increasing. ≪ Problems to be Solved by the Invention > The present invention has few of the above matters, and its purpose is to provide a development processing device and a development processing device. In the image processing method, even in the case of using a large number of developing liquids, continuous processing can be made to improve the processing efficiency. In addition, it can be made into a uniform developing processing, which can not only reduce the residue of the developing liquid, but also obtain high quality. According to the first aspect of the present invention, there is provided a developing and processing device including: a holding device for holding the substrate; and a developing liquid supply mechanism. Is used to supply a certain developing solution to the substrate held by the holding device; and the aforementioned developing solution supply mechanism further includes: most of the developing solution ejection nozzles are used to eject a certain developing solution; The nozzle holding arm is used to hold the majority of the developer discharge nozzles; and the lifting mechanism is capable of individually adjusting the height of the majority of the developer discharge nozzles. According to the second aspect of the present invention, a development is provided. The processing device includes a "holding device" for holding the substrate; a developing liquid supply mechanism for supplying a certain developing liquid to the substrate held by the holding device; and a washing liquid supply device for Supply the rinsing liquid to be coated (please read the precautions on the back before filling out this page) • Order · 5 V. Description of the invention (3) on the substrate of the imaging liquid; and the aforementioned developing liquid supply mechanism includes Yes ... The nozzle for the immersion liquid is used for overflowing and fixing the developing liquid on the substrate held by the aforementioned holding device; and the spray nozzle is used for spraying the supply-fixing developing liquid to be held In the foregoing The substrate of the holding device; and the aforementioned rinsing liquid supply device includes: a pre-rinsing nozzle, which is used to continue to supply a stack of rinsing liquid to the substrate held in the aforementioned holding and completion of the application of the _fixed developing liquid. Substrate; and, flushing nozzle, read and write the aforementioned pre-rinsing nozzle after the completion of the supply of the flushing liquid-the supply of the flushing liquid; and the spray nozzle and the aforementioned pre-washing nozzle are mounted on the same nozzle holding arm that holds the nozzle According to the third aspect of the present invention, a development processing method is provided, which is a development processing method for a substrate subjected to exposure processing. The method includes a fifth process, which is performed by filling the liquid with a certain amount of development liquid. The substrate is mounted in a slightly parallel manner; the second process is to spray-deliver a fixed imaging solution to the substrate overflowed with a certain developing solution; and the third process is in the aforementioned second process. After the spraying and supplying of the developing solution is completed, the substrate is continuously supplied with a flushing solution. According to such a development processing device and a development processing method, since most development liquid discharge nozzles are provided in one development processing device (development processing unit) to apply the development liquid to a substrate, Where it is necessary to supply different types and / or different concentrations of developing solution, a nozzle can be formed to be used instead. Compared with the case where only the nozzle is installed, the time for nozzle cleaning is not lost, and productivity is improved. In addition, by mixing different developing liquids, the characteristics are reduced and particles are generated to form a substrate that can maintain high quality. . A4 size (210X297 mm) This paper size applies Chinese National Standard (CNS) / jy V. Description of the invention (4) b In addition, after the imaging liquid immersion liquid is formed on the substrate, a spray nozzle is used to give Pressure (impact) —supply the developing solution on the surface. Because the developing solution immersion liquid is mixed, the developing process is formed more uniformly. This improves the developing characteristics and obtains a more uniform and uniform developing pattern. ; Image time is shortened. ^ ^ Furthermore, when the pre-rinsing nozzle is installed on the same nozzle holding arm as the developer discharge nozzle, the rinse solution can be supplied because the developer cannot be emptied after the application of the developer, so it is used. The spray nozzle is used to supply the flushing liquid immediately after the development reaction, so that the development reaction can be stopped, and the development characteristics can be improved, the uniform formation pattern can be understood, and the development processing time can be shortened to further develop the image. High quality substrate with reduced liquid residue. < Structure and function of the invention > Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings. FIG. 1 is a plan view showing a protective film coating and developing processing system 100 for an LCD substrate having a developing processing device (developing processing unit) (DEV) 24a to 24c of the present invention. The shy film coating and developing processing system 100 includes a box area 1, a processing section 2, and an interface section 3. This box area is used to hold a large number of [^ 1) a substrate c (substrate) G; a processing unit 2 is provided to perform a continuous process including coating and development of a protective film on the substrate G. The majority of the processing units; the interface unit 3 is used to receive and pay for the substrate 0 with an exposure device (not shown); and at both ends of the processing unit 2, a box area 1 and an interface unit 3 are respectively arranged. This paper size applies to China National Standard (CNS) A4 (210X297 mm)
f請先閱讀背面之注意事¾再填窝本頁) 504739 A7 B7 五、發明説明(5 ) (請先閲讀背面之注意事項再填寫本頁) 匣區1,係具有搬送機構10,用以在匣C與處理部2之 間進行基板G的搬送。而且,在匣區1中,進行匣C之搬出 入。另外,搬送機構10,係在沿著匣之配列方向被設置之 搬送路10a上具有可以移動之搬送臂11,藉該搬送臂11在匣 C與處理部2之間進行基板G的搬送。 處理部2係被分割成前段部2a、中段部2b、與後段部 2c,在分別之中央具有搬送路12 · 13 · 14,在此等搬送路 之兩側設置各處理單元。而且,在此等之間設置中繼部15 · 16 ° 前段部2a,係具有沿著搬送路12可以移動之主搬送裝 置17,在搬送路12之一方側配置2個之洗淨單元(SCR)21a · 21b,在搬送路12之另外一方側設置處理區25、處理區26、 與處理區27。該處理區25,係由紫外線照射單元(UV)與冷 卻單元(COL)被重疊成2段而成;該處理區26,係由加熱處 理單元(HP)被重疊成2段而成;該處理區27,係由冷卻單元 (COL)被重疊成2段而成。 另外,中段部2b,係具有沿著搬送路13可以移動之主 搬送裝置18,在搬送路12之一方侧一體的設置周緣保護膜 除去單元(CT),用以除去保護膜塗敷處理單元(CT)22及基 板G之周緣部之保護膜,在搬送路13之另外一方侧配置處 理區28、處理區29、與處理區30。該處理區28,係由加熱 處理單元(HP)被重疊成2段而成;該處理區29,係由加熱處 理單元(HP)與冷卻單元(COL)被重疊成上下而成;該處理 區30,係由粘著處理單元(AD)與冷卻單元(COL)被重疊成 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 504739 A7 B7 五、發明説明(6 ) 上下而成。 更進一步,後段部2c,係具有沿著搬送路14可以移動 之主搬送裝置19,在搬送路14之一方側配置3個之顯像處理 單元(DEV)24a · 24b · 24c,在在搬送路14之另外一方側配 置處理區31、與處理區32 · 33。該處理區31,係由加熱處 理單元(HP)被重疊成2段而成;該處理區32· 33,係由加熱 處理單元(HP)與冷卻單元(COL)被重疊成上下而成。 尚且,處理部2,係在挾持搬送路之一方侧僅配置洗 淨單元(SCR)21a、保護膜塗敷處理單元(CT)22、與如顯像 處理單元(DEV)24a之旋轉系單元,在另外一方側形成僅配 置加熱處理單元(HP)與冷卻單元(COL)等之熱系處理單元 之構造。 另外,在中繼部1 5 · 16之旋轉系單元配置側之部分配 置藥液供給單元34,進一步,設置空間35用以進行主搬送 裝置17 · 18 · 19之維修。 主搬送裝置17 · 18 · 19,係具有分別之水平面内之2 方向之X軸驅動機構、Y軸驅動機構、及垂直方向之Z軸驅 動機構,進一步,具有以Z軸為中心旋轉之旋轉驅動機構, 並具有分別支撐基板G之臂。 主搬送裝置17係具有搬送臂17a,在與搬送機構10之搬 送臂11之間進行基板G之收付,同時對於前段部2a之各處 理單元之基板G的搬入•搬出,進一步在與中繼部15之間 具有進行基板G的收付之機能。另外,主搬送裝置18具有 搬送臂18a,在與中繼部15之間進行基板G之收付,同時對 9 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 504739 A7 B7 五、發明説明(7 ) 於中段部2b之各處理單元之基板G的搬入•搬出,進一步 在與中繼部16之間具有進行基板G的收付之機能。進一 步,主搬送裝置19具有搬送臂19a,在與中繼部16之間進行 基板G之收付,同時對於後段部2c之各處理單元之基板G的 搬入•搬出,進一步在與界面部3之間具有進行基板G的收 付之機能。尚且,中繼部15 · 16也作為冷卻板之機能。 界面部3,係具有延伸台36、緩衝載物台37、與搬送 機構38。該延伸台36,係用以在與處理部2間收付基板G之 際,一時的保持基板G ;該緩衝載物台37,係具有2個用以 配置緩衝匣,並被設置於其兩侧;該搬送機構38,係用以 進行在此等與曝光裝置(未圖示)間之基板G的搬出入。搬送 機構38,係在沿著延伸台36及緩衝載物台37之配列方向被 設置之搬送路38a上具有移動之搬送臂39,藉該搬送臂39, 在處理部2與曝光裝置之間進行基板G的搬送。 如此,藉彙集各處理單元作成一體化,可以謀求省空 間化及處理的效率化。 在構成如此之保護膜塗敷·顯像處理系統100中,匣C 内之基板G被搬送至處理部2,在處理部2,首先,以前段 部2a之處理區25之紫外線照射單元(UV)進行表面改質•洗 淨處理,被以冷卻處理單元(COL)冷卻後,以洗淨單元 (SCR)21a· 21b實施洗滌器洗淨,被以處理區26之任何之加 熱處理單元(HP)加熱乾燥後,以處理區27之任何之冷卻單 元(COL)被冷卻。 其後,基板G被搬送至中段部2b,為了提高保護膜之 10 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) A7 五、發明説明( 疋者性,Μ處理區3〇之上段之附著性處理單元(綱被疏水 化處理(HMDS處理),以下段之冷卻處理單元(c〇L)冷卻 後,以保護膜塗敷處理單元(CT)22塗敷保護膜,以周緣保 護膜除去單元(ER)23除去基板G之周緣的多餘之保護膜。 八後基板G,係以1個中段部2b中之加熱處理單元(Hp)被 預火、釔處理,並以處理區29或30之下段之冷卻單元(c〇l) 被冷卻。 其後,基板G,係由中繼部16以主搬送裝置19介由界 面部3被搬送至曝光裝置,在該處曝光一定之型式。而且, 基板G再度介由界面部3被搬入,因應需要以後段部之處 理區31 · 32 · 33之任何一個之加熱處理單元(Hp)實施後曝 光哄培處理後,以顯像處理單元(DEV)24a · 2仆· 24c之任 何1個被顯像處理,形成一定之電路型式。被顯像處理之基 板G,係以後段部2c之任何1個之加熱處理單元實施後烘焙 之後,被以任何1個之冷卻單元(c〇L)冷卻,藉主搬送裝置 19· 18· 17及搬送機構1〇,被收納於匣區1上之一定之匣。 其次’針對關於本發明之顯像處理單元(DEV)24a〜 24c加以詳細的說明。第2圖為表示顯像處理單元(DEv)24a 〜24c之一實施型態平面圖,第3圖為在第2圖之顯像處理單 元(DEV)24a〜24c中罩部分之截面圖。如第2圖所示,顯像 處理單元(DEV)24a〜24c係藉水槽48包圍全部。 如第3圖所示,在顯像處理單元(DEV)24a〜24c中,機 械的保持基板G之保持裝置例如旋轉吸盤41,係被設置成 藉馬達等之旋轉驅動機構而被旋轉,在該旋轉吸盤41的下 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 11 (請先閲讀背面之注意事項再填寫本頁) t 訂| B7 五、發明說明(9 ) 側,配置包圍旋轉驅動機構42之蓋43。旋轉吸盤41係藉未 圖示之升降機構形成可以升降’在上升位置中,在與搬送 臂19a之間進行基板G之收付。旋轉吸盤41,係藉真空吸引 力等,形成可以吸著保持基板G。 在蓋43的外周圍,離間設置2個之下罩44 · 45,在該2 個之下罩44· 45間之上方,設置可以自由升降之内罩46, 主要用於將顯像液流向下方,在下罩45的外側,設置與内 罩46—體的可以自由升降之外罩47,主要用以將沖洗一流 向下方。尚且,在第3圖中,在左侧當顯像液排出時,表示 内罩46及外罩47被上升的位置,在右側#沖洗液排出時, 表示此等被下降之位置。 在下罩44之内周側底部設置排氣口 49,用以在旋轉乾 燥時排出單元内之氣體,在2個之下罩44.45間設置排水口 50a ’主要用以排出顯像液,在下罩45的外周側底部設置排 水口 50b,主要用以將沖洗液排出。 在下罩47之一方侧,如第2圖所示,設置噴嘴保持臂 51,在該喷嘴保持臂51安裝被使用為顯像液吐出噴嘴之一 貫施型態之浸置液形成用噴嘴8〇a · 80b,用以將顯像液塗 敷至基板G。喷嘴保持臂51,係沿著導執53之長方向,藉 皮帶驅動等之驅動機構52,構成使其穿過基板G移動,在 塗敷顯像液時,喷嘴保持臂51,係由浸置液形成用喷嘴 80a· 80b—面吐出顯像液,一面形成掃描靜止之基板〇上。 另外,浸置液形成用喷嘴80a · 80b係形成被待機於喷 嘴待機部115,在該噴嘴待機部ι15設置喷嘴洗淨機構12〇, 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 12f Please read the notes on the back ¾ and then fill in this page) 504739 A7 B7 V. Description of the invention (5) (Please read the notes on the back before filling in this page) Box 1 is equipped with a transport mechanism 10 for The substrate G is transferred between the cassette C and the processing unit 2. In the cassette area 1, the cassette C is carried in and out. In addition, the transfer mechanism 10 has a transfer arm 11 that is movable on a transfer path 10a provided along the arrangement direction of the cassettes, and the substrate G is transferred between the cassette C and the processing unit 2 by the transfer arm 11. The processing section 2 is divided into a front section 2a, a middle section 2b, and a rear section 2c, and has a conveying path 12 · 13 · 14 in the center of each of them. Each processing unit is provided on both sides of the conveying path. In addition, a relay section 15 · 16 ° front section 2 a is provided between them, and the main conveying device 17 is movable along the conveying path 12, and two cleaning units (SCRs) are arranged on one side of the conveying path 12. 21a, 21b, a processing area 25, a processing area 26, and a processing area 27 are provided on the other side of the transport path 12. The processing area 25 is formed by overlapping an ultraviolet irradiation unit (UV) and a cooling unit (COL) into two sections; the processing area 26 is formed by overlapping a heating processing unit (HP) into two sections; the processing Zone 27 is formed by overlapping cooling units (COL) into two sections. In addition, the middle section 2b is provided with a main conveying device 18 movable along the conveying path 13 and a peripheral protective film removing unit (CT) is integrally provided on one side of the conveying path 12 to remove the protective film coating processing unit ( CT) 22 and the protective film of the peripheral portion of the substrate G are provided with a processing area 28, a processing area 29, and a processing area 30 on the other side of the transport path 13. The processing area 28 is formed by overlapping the heat treatment unit (HP) into two sections; the processing area 29 is formed by overlapping the heat treatment unit (HP) and the cooling unit (COL); the processing area 30. It is formed by overlapping the adhesive processing unit (AD) and the cooling unit (COL). The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). 504739 A7 B7 V. Description of the invention (6). Furthermore, the rear section 2c has a main transfer device 19 that can be moved along the transfer path 14. Three development processing units (DEV) 24a, 24b, and 24c are arranged on one side of the transfer path 14. A processing area 31 and a processing area 32 · 33 are arranged on the other side of 14. The processing area 31 is formed by overlapping the heating processing unit (HP) into two sections, and the processing area 32 · 33 is formed by overlapping the heating processing unit (HP) and the cooling unit (COL). In addition, the processing unit 2 is only a rotation system unit including a cleaning unit (SCR) 21a, a protective film coating processing unit (CT) 22, and a development processing unit (DEV) 24a on one side of the holding conveyance path. On the other side, a structure in which a heat treatment unit such as a heat treatment unit (HP) and a cooling unit (COL) is arranged is formed. In addition, the medicinal solution supply unit 34 is allocated to a portion on the side of the rotation system unit arrangement of the relay section 15 · 16 and a space 35 is provided for the maintenance of the main transfer device 17 · 18 · 19. The main conveying devices 17 · 18 · 19 are X-axis drive mechanism, Y-axis drive mechanism, and Z-axis drive mechanism in two directions in the horizontal plane, and they also have a rotary drive that rotates around the Z axis. Mechanism, and has arms respectively supporting the substrate G. The main transfer device 17 has a transfer arm 17a for receiving and paying the substrate G between the transfer arm 11 and the transfer arm 10 of the transfer mechanism 10. At the same time, the substrate G of each processing unit in the front section 2a is moved in and out. A function of receiving and paying the substrate G is provided between the sections 15. In addition, the main conveying device 18 has a conveying arm 18a, which receives and pays the substrate G between the relay section 15 and the 9 (please read the precautions on the back before filling this page). This paper size applies Chinese national standards ( CNS) A4 specification (210X297 mm) 504739 A7 B7 V. Description of the invention (7) The board G is moved in and out of each processing unit in the middle section 2b, and the board G is further received between the relay section 16 and the board G. Function. Further, the main transfer device 19 has a transfer arm 19a for receiving and paying the substrate G between the relay section 16 and the substrate G of each processing unit in the rear section 2c. There is a function of receiving and paying the substrate G at a time. In addition, the relay section 15 · 16 also functions as a cooling plate. The interface section 3 includes an extension table 36, a buffer stage 37, and a transport mechanism 38. The extension stage 36 is used to temporarily hold the substrate G while receiving and disposing the substrate G between the processing unit 2 and the buffer stage 37. The buffer stage 37 is provided with two buffer cassettes, and is disposed on the two sides thereof. This conveying mechanism 38 is used to carry in and out the substrate G between these and an exposure device (not shown). The conveying mechanism 38 is provided with a moving arm 39 on a conveying path 38a provided along the arrangement direction of the extension table 36 and the buffer stage 37, and the conveying arm 39 is used between the processing section 2 and the exposure device. Transfer of the substrate G. In this way, by integrating the processing units together, it is possible to achieve space saving and efficient processing. In such a protective film coating and developing processing system 100, the substrate G in the cassette C is transported to the processing section 2. In the processing section 2, first, the ultraviolet irradiation unit (UV in the processing section 25 of the previous section 2a) ) For surface modification and cleaning treatment, after being cooled by the cooling treatment unit (COL), the washing unit is washed by the cleaning unit (SCR) 21a, 21b, and is heated by any heating treatment unit (HP) in the processing area 26 ) After heating and drying, it is cooled by any cooling unit (COL) in the processing zone 27. Thereafter, the substrate G was transferred to the middle section 2b. In order to increase the protection film 10 (please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) A7 5 2. Description of the invention (individuality, the adhesion processing unit (the upper stage is hydrophobized (HMDS treatment) in the upper stage of the M treatment zone 30), the cooling treatment unit (c0L) in the lower stage is cooled and then coated with a protective film The processing unit (CT) 22 is coated with a protective film, and the peripheral protective film removing unit (ER) 23 is used to remove the excess protective film on the peripheral edge of the substrate G. The eighth substrate G is a heating processing unit (1) in the middle section 2b. Hp) is pre-fired, yttrium treated, and cooled by a cooling unit (c0l) in the lower section of the processing zone 29 or 30. Thereafter, the substrate G is passed through the relay section 16 and the main transfer device 19 through the interface section. 3 is transported to the exposure device, where a certain type of exposure is performed. In addition, the substrate G is carried in again through the interface section 3, and a heating processing unit (Hp) of any of the processing sections 31, 32, 33 in the subsequent section is required as needed. ) After the post-exposure coping process, Any one of the processing unit (DEV) 24a · 2 servant · 24c is developed to form a certain circuit type. The substrate G that is developed is a post-baking process for any one of the heating processing units in the second section 2c. After that, it is cooled by any one of the cooling units (c0L), and is stored in a certain box on the box area 1 by the main transfer device 19 · 18 · 17 and the transfer mechanism 10. Next, the present invention is directed to the present invention. The development processing units (DEV) 24a to 24c are described in detail. FIG. 2 is a plan view showing one embodiment of the development processing units (DEv) 24a to 24c, and FIG. 3 is the development processing in FIG. 2 A cross-sectional view of the cover portion of the units (DEV) 24a to 24c. As shown in FIG. 2, the development processing units (DEV) 24a to 24c are surrounded by a water tank 48. As shown in FIG. 3, the development processing unit In (DEV) 24a to 24c, a mechanical holding device for holding the substrate G, such as a rotary chuck 41, is provided to be rotated by a rotary driving mechanism such as a motor. The paper size of the rotary chuck 41 is adapted to Chinese national standards. (CNS) A4 size (210X297mm) 11 (Please read the back first Note: Please fill in this page again.) Order | B7 V. Description of the invention (9), there is a cover 43 that surrounds the rotary drive mechanism 42. The rotary suction cup 41 is formed by a lifting mechanism (not shown) that can be raised and lowered. Payment and receipt of the substrate G is performed with the transfer arm 19a. The rotary chuck 41 is formed to hold and hold the substrate G by means of a vacuum suction force. Two outer covers 44 and 45 are provided at intervals on the outer periphery of the cover 43. Above the two lower covers 44 and 45, an inner cover 46 that can be lifted and lowered is provided, which is mainly used to flow the developing liquid downward. On the outer side of the lower cover 45, the inner cover 46 can be installed freely. The lifting cover 47 is mainly used to push the flushing down. In Fig. 3, when the developing liquid is discharged on the left side, the positions of the inner cover 46 and the outer cover 47 are raised, and when the flushing liquid is discharged on the right side, the positions are lowered. An exhaust port 49 is provided at the bottom of the inner peripheral side of the lower cover 44 to discharge the gas in the unit during spin drying. A drain port 50a is provided between the two lower covers 44.45. The main purpose is to discharge the developing solution. A drain port 50b is provided at the bottom of the outer peripheral side, and is mainly used to discharge the washing liquid. On one side of the lower cover 47, as shown in FIG. 2, a nozzle holding arm 51 is provided, and an immersion liquid forming nozzle 8a used as a continuous application type of the developing liquid discharge nozzle is mounted on the nozzle holding arm 51. 80b for applying the developing solution to the substrate G. The nozzle holding arm 51 is moved along the length of the guide 53 by a driving mechanism 52 such as a belt drive to move it through the substrate G. When the developing liquid is applied, the nozzle holding arm 51 is immersed. The liquid-forming nozzles 80a and 80b eject the developing liquid on one side, and form a scanning stationary substrate 0 on the other side. In addition, the nozzles 80a and 80b for forming an immersion liquid are formed on the nozzle standby portion 115, and a nozzle cleaning mechanism 12 is provided in the nozzle standby portion ι15. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297) Centimeters) 12
(請先閲讀背面之注意事項再填寫本頁) 504739 A7 B7 五、發明説明(l〇 ) 用以洗淨浸置液形成用喷嘴8〇a · 80b。針對浸置液形成用 喷嘴80a · 80b等之詳細容後再述。 •… (請先閲讀背面之注意事項再填寫本頁) 在外罩47之另一方侧,吐出純水等之沖洗液之沖洗喷 嘴60,被安裝配置於沖洗喷嘴臂54。作為沖洗喷嘴6〇,係 可以使用管狀具有圓形之吐出口之物。沖洗喷嘴臂,係 藉驅動機構56沿著導執53之長方向被設置成可以自由滑 動,形成由沖洗噴嘴60 —面使沖洗液吐出一面掃描基板β(Please read the precautions on the back before filling this page) 504739 A7 B7 V. Description of the invention (10) The nozzles 80a and 80b for cleaning the immersion liquid are cleaned. Details of the nozzles 80a and 80b for forming an immersion liquid will be described later. • ... (Please read the precautions on the back before filling in this page.) On the other side of the cover 47, a flushing nozzle 60 that discharges a flushing liquid such as pure water is installed on the flushing nozzle arm 54. As the flushing nozzle 60, a tube-shaped object having a circular discharge port can be used. The flushing nozzle arm is set to be able to slide freely along the length of the guide 53 by the driving mechanism 56. The flushing nozzle 60 is formed so that the flushing liquid is discharged while scanning the substrate β.
、可I 尚且,朝顯像處理單元(DEV)24a〜24c,係在上部形 成空間,使保護膜塗敷顯像處理系統丨〇〇,由所配置之場所 之最高處被供給清淨之向下吹風。另外,分別在基板G的 上空設置吹氣機構與電離,該吹氣機構,係用以朝被保持 於旋轉吸盤41之基板G供給氮氣等之乾燥氣體;該電離, 係用以除去發生於旋轉吸盤41之靜電氣。 另外,如圖4所示,使旋轉吸盤41旋轉之旋轉驅動機 構42、使顯像液用之噴嘴保持臂51滑動移動之驅動機構 52、及使沖洗喷嘴臂54滑動移動之驅動機構56,都是藉控 制裝置70被控制。 其次,針對朝被保持於旋轉吸盤41之基板G塗敷顯像 液之浸置液形成用噴嘴80a· 80b加以詳細說明。作為浸置 液形成用噴嘴8〇a.80b,係例如如第5圖之透視圖所示,亦 可使用多數之略圓形狀之顯像液吐出口在—方向較長被形 成1列或多數列並排之噴嘴等,來替代具有切口狀之顯像液 吐出口 85a · 85b之噴嘴。在該場合亦可以對基板g略垂直, 可 I Still, toward the development processing units (DEV) 24a ~ 24c, a space is formed in the upper part, so that the protective film is applied to the development processing system 丨 〇〇〇 It is supplied from the highest place of the place to be cleaned downward. Hair dryer. In addition, an air blowing mechanism and an ionization are respectively provided above the substrate G, and the air blowing mechanism is used to supply a dry gas such as nitrogen to the substrate G held by the rotary chuck 41; the ionization is used to remove the rotation occurring in the rotation The static electricity of the chuck 41. In addition, as shown in FIG. 4, the rotation driving mechanism 42 that rotates the rotary chuck 41, the driving mechanism 52 that slides the nozzle holding arm 51 for the developing liquid, and the driving mechanism 56 that slides the flushing nozzle arm 54 are all It is controlled by the control device 70. Next, the nozzles 80a and 80b for forming an immersion liquid for applying a developing liquid to the substrate G held by the rotary chuck 41 will be described in detail. As the nozzle 80a.80b for forming an immersion liquid, as shown in the perspective view of FIG. 5, for example, a plurality of slightly rounded developing liquid ejection outlets may be formed in a row or in a long direction. Side by side nozzles, etc., instead of nozzles with slit-shaped developer discharge ports 85a · 85b. In this case, it can also be slightly perpendicular to the substrate g.
504739504739
的供給略帶狀之顯像液。 (請先閲讀背面之注意事項再填寫本頁) 浸置液形成用噴嘴80a · 80b,亦可以形成分別藉壓氣 缸與電動馬達等之升降機構來改變高度位置之構造,在塗 敷顯像液時,使升降機構58a擴張,使使用之一方的浸置液 形成用喷鳴,例如浸置液形成用喷嘴8〇a位置於下方,未使 用之/文置液开>成用喷嘴8〇b,則使其接近噴嘴保持臂51的底 面形成可以保持於上方。另外,在第6圖表示朝浸置液形成 用噴嘴80a · 80b之顯像液之送液路徑之說明圖。在此,在 /又置液开> 成用贺嘴8〇a · 8〇b形成送液路徑a · b,使其供給 分別不同種類及/或不同濃度之顯像液A · b。 訂— 藉如此之構造,使噴嘴保持臂51 一面掃描基板G上, 例如,在由浸置液形成用噴嘴8〇a之顯像液吐出口 85a,將 疋之顯像液(顯像液A)塗敷於基板g上之際,未使用之浸 置液形成用喷嘴80b之顯像液吐出口 85b,由於未接觸到被 塗敷於基板G之顯像液A,所以顯像液b混入基板g上之顯 像液浸置液,浸置液形成用噴嘴80b不會因顯像液A而發生 被污染之問題。 另外,由於可以將來自浸置液形成用噴嘴8〇a · 80b之 各個不同之顯像液塗敷於基板G,例如,在2組之基板(3使 用分別不同種類之保護膜,所以一定要使用不同種類之顯 像液進行顯像處理,而且對於需要連續處理彼等套組的場 合’也可以容易的對應。也就是,與僅具有1個之浸置液形 成用噴嘴(顯像液吐出噴嘴)的場合比較後,沒有必要進行 浸置液形成用喷嘴的清掃,由於僅調整浸置液形成用噴嘴 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 504739 A7 _B7_ 五、發明説明(12 ) 80a · 80b的位置就可以連續地進行顯像處理,所以可以提 高處理效率,使生產性提昇。 如第6圖所示,在分別之送液路徑A · B設置脫氣組件 59a · 59b。在被送液之顯像液A · B,溶存例如被使用於用 以將顯像液A · B送液至浸置液形成用喷嘴80a· 80b之高壓 之氮氣等,在將顯像液朝基板G塗敷之際,溶存氣體氣泡 化的附著於基板G,有可能在機板G引起沒有被顯像液淋濕 部分發生顯像不良的情況。在此,藉脫氣組件59a · 59b除 去如此之溶存氣體。脫氣組件59a · 59b,係可以做成顯像 液通過被減壓空氣之中空系膜與多孔質樹脂之構造。 在送液路徑Α ·Β設置三方閥57a· 57b。在將顯像液A · B朝浸置液形成用喷嘴80a · 80b供給的場合,為了進行真 空吸引,將閥作成關閉狀態,在顯像液A · B之供給終了後 關閉顯像液A · B之供給側之閥,並打開真空吸引側之閥, 如此操作使殘留於浸置液形成用喷嘴80a · 80b之顯像液排 出。如此可以防止顯像液由浸置液形成用喷嘴80a · 80b滴 下,特別是防止由未使用之浸置液形成用喷嘴80a · 80b滴 下,更可以防止別的顯像液混入形成中之顯像液浸置液。 尚且,進行真空吸引之時間可以任意設定,藉此等可以控 制浸置液形成用喷嘴80a · 80b内之顯像液量。 其次,針對使用具有上述之2個之浸置液形成用喷嘴 80a · 80b之顯像處理單元(DEV)24a〜24c之顯像處理製 程,在將某組(稱組A)之多數枚之基板G,使用浸置液形成 用喷嘴80a,藉顯像液A處理後,將其他之組(稱組B)之多數 15 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) A7 --— _B7^___ 五、發明説明(13 ) 枚之基板G,使用浸置液形成用噴嘴8〇1),藉與顯像液a不 同之別的顯像液B處理的場合為例加以說明。第7圖為表示 該顯像處理製程之說明圖(流程圖)。 首先,將内罩46與外罩47保持於下段(第3圖右側位 置)(步驟1)。作為該狀態,係將保持基板^之搬送臂19插入 顯像處理單元(DEV)24a〜24c内,配合該時間使旋轉吸盤 41上升,將基板G朝旋轉吸盤41收付(步驟2)。 使搬送臂19a等待於顯像處理單元(DEV)24a〜24c 外,使載置基板G之旋轉吸盤41下降保持於一定位置(步驟 3)。而且將噴嘴保持臂51移動配置到内罩46内之一定位置 (步驟4),使升降機構58a擴張,僅使浸置液形成用噴嘴8〇a 位置於下方保持(步驟5)。持續,一面掃描基板(3上,一面 使用浸置液形成用喷嘴8〇a,將一定之顯像液a塗敷至基板 G上’形成顯像液浸置液(步驟6)。尚且,在將顯像液A塗 敷至基板G上之際,在第6圖所示之三方閥5乃中,為了供 給顯像液A用以進行真空吸引之閥形成關閉之狀態。 在基板G上形成顯像液浸置液後,在經過一定之顯像 處理時間(顯像反應時間)之間,使升降機構58a縮小,並使 浸置液形成用噴嘴80a向上方移動保持(步驟7),使喷嘴保 持臂51由内罩46及外罩47待避(步驟8),轉而驅動沖洗噴嘴 臂54,將沖洗噴嘴60配置於基板G上之一定位置(步驟9)。 持續’使内罩46與外罩47上升,保持於上段位置(第3圖之 左侧位置)(步驟10)。該上段位置之基板G的表面之水平位 置’係作成約略配合於内罩46之錐狀部之位置的高度。 16 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 504739 A7 B7 五、發明説明(14 ) (請先閲讀背面之注意事項再填寫本頁) 使基板G以低速旋轉,將基板G上之顯像液約略與進入 甩開動作同時,由沖洗液喷嘴60吐出沖洗液,進一步約略 與如此之動作同時,藉排氣口 49開始排氣動作(步驟11)。 也就是,在顯像反應時間經過之前,排氣口 49最好作成未 動作之狀態,藉此在被形成於基板G上之顯像液浸置液, 因排氣口49的動作不會發生氣流發生的不良影響。 開始基板G的旋轉,由基板G向其外周飛散之顯像液及 沖洗液,係被由碰到内罩46之錐狀部與外周壁(侧面之垂直 壁)被導引至下方之排水口 50a排出。此時由基板G之開始旋 轉到經過一定之時間,主要由顯像液所形成之顯像液濃度 高的處理液,被由排水口 50a排出。如此顯像液濃度高之排 出液最好回收以供再度利用。為此,排水口 50a最號作成藉 轉換閥可以分成回收排出液之流路與廢棄流路之排液流路 之構造。 在由基板G的開始旋轉經過一定時間後,在一面吐出 沖洗亦一面使基板G旋轉之狀態下,使内罩46與外罩47下 降保持於下段位置(步驟12)。在下段位置,基板G的表面之 水平位置作成約略配合外罩47之錐狀部之位置的高度。而 且,將基板G之旋轉數作成比旋轉動作開始還大,使基板G 上之顯像液之殘渣變少。提升該基板G的旋轉數之操作, 係與内罩46與外罩47之下降動作同時,或即使在其前後之 任何階段進行均可。由基板G飛散主要由沖洗液所形成之 處理液,係被由碰上外罩47之錐狀部與外周壁之排水口 50b 排出。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) _ Π - 504739 A7 — ___ B7______ 五、發明説明(15 ) 其次,停止沖洗液的吐出,使沖洗液喷嘴6〇退避到一 定位置之外罩47外之一定位置,同時使内罩46與外罩47朝 上段位置移動保持(步驟13),進一步提昇基板(3的旋轉數保 持一定時間。也就是,藉高速旋轉進行乾燥基板G之旋轉 乾燥(步驟14)。在該旋轉乾燥時,最好一面使用由基板G 的上方之吹氣機構,一面進行將乾燥之氮氣等供給至基 板。藉此等乾燥時間被短縮。 第8圖為說明朝基板g供給氣體之一實施型態之說明 圖。吐出氮氣之喷嘴98,係如第8(a)圖所示,除了旋轉乾 燥時,略水平的被保持於内罩46與外罩47之上方的一定位 置。而且,在進行旋轉乾燥之際,如第8(b)圖所示,配管 99之關節部分99a被彎曲,喷嘴98的先端朝向基板G,將氮 氣面向基板G供給。在旋轉乾燥終了時點停止氮氣的供 給。將關郎部分99a恢復到原來的形狀,將喷嘴98與配管99 的全部保持略水平。 在旋轉乾燥終了後停止基板G的旋轉,使内罩46與外 罩47朝下段位置移動保持,同時使旋轉吸盤41上升(步驟 15) ’配合其時間將搬送臂i9a插入顯像處理單元(DEV)24a 〜24c内進行基板G的收付,其後使用電離進行發生於旋轉 吸盤41之靜電氣的除去(除電K步驟16)。該除電係與剛才在 旋轉乾燥時使用吹氣機構將氮氣喷塗於基板G之方法相同 之做法’可以藉供給使用電離使其離子化之氣體於基板G 來進行。 在由上述步驟1至步驟16之一連之製程終了後之旋轉 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公爱) (請先閲讀背面之注意事項再填窝本頁)The supply of slightly banded imaging solution. (Please read the precautions on the back before filling in this page.) The nozzles 80a and 80b for immersion liquid formation can also be constructed by changing the height position by lifting mechanisms such as pressure cylinders and electric motors. At this time, the lifting mechanism 58a is expanded to make a squeak for one of the immersion liquid formations. For example, the immersion liquid formation nozzle 80a is positioned below, and the unused / manufactured liquid opening > formation nozzle 8o is used. b, it is made close to the bottom surface of the nozzle holding arm 51 so that it can be held upward. In addition, Fig. 6 is an explanatory view showing a liquid feeding path toward the developing liquid of the immersion liquid forming nozzles 80a and 80b. Here, a liquid feeding path a · b is formed at the opening / opening position of the nozzle 80a · 80b to supply different types and / or different concentrations of the developing solutions A · b. Order — With this structure, the nozzle holding arm 51 scans the substrate G on one side, for example, at the developing solution discharge port 85a of the nozzle 80a for forming the immersion liquid, the developing solution (development solution A ) When it is applied to the substrate g, the unused developing solution ejection port 85b of the nozzle 80b for immersion liquid formation is not in contact with the developing solution A coated on the substrate G, so the developing solution b is mixed in. The developing liquid immersion liquid on the substrate g, and the immersion liquid forming nozzle 80b will not be contaminated by the developing liquid A. In addition, since different developing liquids from the nozzles 80a and 80b for forming an immersion liquid can be applied to the substrate G, for example, two sets of substrates (3 use different types of protective films, so it is necessary to Different types of imaging solutions are used for imaging processing, and it is also easy to cope with the cases where they need to be processed continuously. That is, it has a nozzle for forming an immersion solution (the ejection of the imaging solution) Nozzle) After comparison, it is not necessary to clean the nozzle for forming the immersion liquid. Since only the nozzle for immersion liquid formation is adjusted, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 504739 A7 _B7_ V. Description of the invention (12) The development processing can be performed continuously at the positions of 80a and 80b, so the processing efficiency can be improved and the productivity can be improved. As shown in FIG. 6, a degassing component is provided in each of the liquid feeding paths A and B. 59a · 59b. The developer solution A · B to be fed is dissolved and used, for example, to send the developer solution A · B to the high-pressure nitrogen gas of the nozzle 80a · 80b for immersion solution formation. Imaging When the liquid is applied to the substrate G, the dissolved gas adheres to the substrate G in a bubble state, and the development failure may occur in the portion of the plate G that is not wetted by the developing liquid. Here, the deaeration unit 59a is used. 59b removes such dissolved gas. The degassing components 59a and 59b can be made into a structure in which the developing solution passes through the hollow system membrane and the porous resin through the decompressed air. Three-way valves 57a and 57b are provided in the liquid feeding path A and B. When the developing solution A and B are supplied to the immersion liquid forming nozzles 80a and 80b, the valve is closed for vacuum suction, and the developing solution A is closed after the supply of the developing solution A and B is completed. · The valve on the supply side of B, and the valve on the vacuum suction side is opened, so that the developing liquid remaining in the immersion liquid forming nozzles 80a and 80b is discharged. This prevents the developing liquid from the immersion liquid forming nozzle 80a. · 80b dripping, especially to prevent dripping from the unused immersion liquid forming nozzle 80a · 80b dripping can prevent other developing liquid from mixing into the developing solution immersion liquid in the formation. Moreover, the vacuum suction time can be arbitrary Settings so that can wait In order to control the amount of imaging liquid in the nozzles 80a and 80b for forming an immersion liquid, the imaging processing units (DEV) 24a to 24c using the two nozzles 80a and 80b for forming an immersion liquid are described above. In the image processing process, a plurality of substrates G in a certain group (referred to as group A) are treated with the developing solution A using the immersion liquid forming nozzle 80a, and then the majority of the other groups (referred to as group B) 15 ( Please read the notes on the back before filling this page.) This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) A7 --- _B7 ^ ___ 5. Description of the invention (13) substrate G The liquid-forming nozzle 801) will be described using an example in which the developing solution B is different from the developing solution a. Fig. 7 is an explanatory diagram (flow chart) showing the developing process. First, the inner cover 46 and the outer cover 47 are held at the lower stage (the right position in Fig. 3) (step 1). In this state, the transfer arm 19 holding the substrate ^ is inserted into the development processing units (DEV) 24a to 24c, and the rotary chuck 41 is raised in accordance with this time, and the substrate G is charged toward the rotary chuck 41 (step 2). The transfer arm 19a is waited outside the development processing units (DEV) 24a to 24c, and the rotary chuck 41 on which the substrate G is placed is lowered and held at a predetermined position (step 3). Then, the nozzle holding arm 51 is moved to a predetermined position in the inner cover 46 (step 4), the lifting mechanism 58a is expanded, and only the position of the immersion liquid forming nozzle 80a is held below (step 5). Continuously, while scanning the substrate (3, using a nozzle 8a for forming an immersion liquid, apply a certain developing liquid a to the substrate G 'to form a developing liquid immersion liquid (step 6). Also, in When the developing solution A is applied to the substrate G, the three-way valve 5 shown in FIG. 6 is closed to supply the developing solution A for vacuum suction. The valve is closed. After the developing solution immersion liquid, the elevating mechanism 58a is reduced and the immersion solution forming nozzle 80a is moved upward and held between a certain development processing time (development reaction time) (step 7), so that The nozzle holding arm 51 is to be avoided by the inner cover 46 and the outer cover 47 (step 8), and the flushing nozzle arm 54 is driven, and the flushing nozzle 60 is arranged at a certain position on the substrate G (step 9). Continue to make the inner cover 46 and the outer cover 47 rises and remains at the upper position (the left position in FIG. 3) (step 10). The horizontal position of the surface of the substrate G at the upper position is a height that approximately matches the position of the tapered portion of the inner cover 46. 16 (Please read the notes on the back before filling this page) Use the Chinese National Standard (CNS) A4 specification (210X297 mm) 504739 A7 B7 V. Description of the invention (14) (Please read the precautions on the back before filling this page) Make the substrate G rotate at a low speed and turn the display on the substrate G The flushing liquid is ejected from the flushing liquid nozzle 60 at about the same time as when the image liquid enters the shake-off operation, and at the same time as this, the exhausting operation is started by the exhaust port 49 (step 11). That is, after the development reaction time elapses Previously, the exhaust port 49 was preferably left in a non-operating state, so that the developing liquid immersion liquid in the substrate G was formed, and the adverse effects of air flow would not occur due to the operation of the exhaust port 49. Start of the substrate G During the rotation, the developing liquid and washing liquid scattered from the substrate G to its outer periphery are guided by the cone-shaped portion and the outer peripheral wall (vertical wall on the side) that hit the inner cover 46 to be discharged to the lower drain port 50a. At this time, a certain period of time elapses from the start of rotation of the substrate G, and the processing solution having a high concentration of the developing solution formed by the developing solution is discharged through the drainage port 50a. The discharged solution having such a high concentration of the developing solution is preferably recovered For reuse. Therefore, the drain port 50a is constructed by a switching valve and can be divided into a recovery flow path and a waste flow path. After a certain period of time has passed from the start of the rotation of the substrate G, it is also discharged and flushed. While the substrate G is rotating, the inner cover 46 and the outer cover 47 are lowered and held at the lower position (step 12). At the lower position, the horizontal position of the surface of the substrate G is made to approximately match the position of the tapered portion of the outer cover 47. The rotation number of the substrate G is made larger than the start of the rotation operation, so that the residue of the developing solution on the substrate G is reduced. The operation of increasing the rotation number of the substrate G is simultaneously with the lowering operation of the inner cover 46 and the outer cover 47. , Or even at any stage before and after it. The processing liquid mainly formed by the rinsing liquid scattered from the substrate G is discharged through the taper portion of the cover 47 and the drain port 50b on the outer peripheral wall. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) _ Π-504739 A7 — ___ B7______ V. Description of the invention (15) Secondly, stop the discharge of the flushing liquid, and make the flushing liquid nozzle 60 to a certain position At a certain position outside the outer cover 47, at the same time, the inner cover 46 and the outer cover 47 are moved and held upward (step 13), and the substrate is further raised (the number of rotations of 3 is maintained for a certain time. That is, the rotation of the dried substrate G is performed by high-speed rotation. Drying (step 14). In this spin-drying, it is preferable to supply dry nitrogen or the like to the substrate while using a blowing mechanism from above the substrate G. This drying time is shortened. FIG. 8 is an illustration An explanatory view of an embodiment of supplying gas to the substrate g. The nozzle 98 for discharging nitrogen is shown in FIG. 8 (a), except that it is held horizontally above the inner cover 46 and the outer cover 47 except for spin drying. When the spin-drying is performed, as shown in FIG. 8 (b), the joint portion 99a of the piping 99 is bent, the tip of the nozzle 98 faces the substrate G, and nitrogen gas is supplied to the substrate G. The nitrogen supply is stopped at the end of the spin drying. The Guanlang portion 99a is restored to its original shape, and the nozzle 98 and the piping 99 are kept slightly horizontal. After the spin drying is finished, the rotation of the substrate G is stopped to make the inner cover 46 and the outer cover. 47 moves to the lower position and raises the rotary chuck 41 (step 15) 'The transfer arm i9a is inserted into the development processing units (DEV) 24a to 24c to receive and pay for the substrate G in accordance with the time, and then occurs using ionization. Removal of static electricity on the rotating chuck 41 (electrostatic elimination step K16). This electrostatic elimination method is the same as the method of spraying nitrogen on the substrate G using a blowing mechanism just before spin drying. The gasification is carried out on the substrate G. After the end of the process from one of the steps 1 to 16, the rotation of this paper applies the Chinese National Standard (CNS) A4 specification (21〇297297). (Please read the (Notes to refill this page)
、可I 504739 A7 __B7_ 五、發明説明(16 ) 吸盤41上,在沒有基板G之狀態,由於内罩46與外罩47係 位於下段位置,所以步驟1之狀態可以被滿足。另外,其次 應處理之基板G,若藉搬送臂19a被搬送至顯像處理單元 (DEV)24a〜24c内的話,則依照步驟2以後之前述製程可以 繼續進行基板G的顯像處理。 依上述之製程,在完成針對組A之全部基板G之顯像處 理後,在被設置於送液路徑A之三方閥57a(參照第6圖)中, 操作關閉顯像液A之供給側之閥,打開真空吸引側之閥, 讓殘留於浸置液形成用喷嘴80a之顯像液A排出(步驟17)。 如此做法,可以防止顯像液A之液體由浸置液形成用喷嘴 80a滴下。其後,與由上述之步驟1到步驟16同樣之做法, 針對組B之基板G,藉使用浸置液形成用喷嘴80b之顯像液B 進行顯像處理(步驟18)。如此做法,可以連續地的使用不 同之顯像液A · B進行顯像處理。 針對組B之全部的基板G,在完成顯像處理後,在被設 置於送液路徑B之三方閥57b(參照、第6圖)中,關閉顯像液B 之供給侧之閥,打開真空吸引侧之閥,排出殘留於浸置液 形成用喷嘴80b之顯像液B(步驟19)。如此完成全部之處理。 其次,針對顯像液處理單元(DEV)24a〜24c,針對不 同顯像液供給機構之構造之其他實施型態加以說明。在第5 圖係表示將具有2個不同構造之浸置液形成用喷嘴80a· 80b 安裝於喷嘴保持臂51之型態,但顯像液之吐出型態亦可以 安裝不同多數之顯像液吐出喷嘴。例如,第9圖係表示將以 與浸置液形成用喷嘴80a—定強度,將顯像液面向基板G喷 19 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)可可 504739 A7 __B7_ 5. Description of the invention (16) In the state without the substrate G on the suction cup 41, since the inner cover 46 and the outer cover 47 are located at the lower position, the state of step 1 can be satisfied. In addition, if the substrate G to be processed next is transferred to the development processing units (DEV) 24a to 24c by the transfer arm 19a, the development processing of the substrate G can be continued according to the aforementioned process from step 2. According to the above process, after the development processing for all substrates G of group A is completed, the three-way valve 57a (refer to FIG. 6) provided in the liquid feeding path A is operated to close the supply side of the developing solution A. The valve is opened, and the valve on the vacuum suction side is opened, and the developing liquid A remaining in the immersion liquid forming nozzle 80a is discharged (step 17). In this way, it is possible to prevent the liquid of the developing solution A from dripping from the immersion liquid forming nozzle 80a. Thereafter, in the same manner as in steps 1 to 16 described above, the substrate G of the group B is subjected to development processing by using the developing solution B of the immersion liquid forming nozzle 80b (step 18). In this way, different developing solutions A and B can be continuously used for development processing. For all substrates G in group B, after the development process is completed, the three-way valve 57b (refer to FIG. 6) provided in the liquid feed path B is used to close the valve on the supply side of the development liquid B and open the vacuum. The suction-side valve discharges the developing solution B remaining in the immersion liquid-forming nozzle 80b (step 19). This completes all processing. Next, the developing solution processing units (DEVs) 24a to 24c and other embodiments of the structure of the developing solution supply mechanism will be described. Fig. 5 shows a type in which the nozzles 80a and 80b for forming an immersion liquid having two different structures are mounted on the nozzle holding arm 51. However, a type of developing solution can be discharged and a large number of developing solutions can be discharged. nozzle. For example, Fig. 9 shows that the developing liquid will be sprayed toward the substrate G at a constant strength with the nozzle 80a for forming the immersion liquid. 19 (Please read the precautions on the back before filling this page.) This paper size applies Chinese national standards. (CNS) A4 size (210X297 mm)
五、發明説明(Π ) 塗供給之喷務噴嘴80c安裝於嘴保持臂51之型態。浸置液形 成用噴嘴80a與喷霧喷嘴80e,係藉升降機構58a · 58〇形成 可以上下個別地調節位置。 在安裝浸置液形成用噴嘴8〇a與喷霧喷嘴8〇c於喷嘴保 持臂51的場合,與前述之第6圖的場合不同,例如,如第1〇 圖所示,在浸置液形成用噴嘴8〇a與喷霧喷嘴8〇c構成顯像 液之送液路徑A · C,使同一之顯像液被供給,而且,最初 在使用浸置液形成用喷嘴80a形成顯像液浸置液後,由使用 喷霧喷嘴80c被形成顯像液浸置液之上面進一步供給顯像 液。 由被形成於噴霧喷嘴80c之略橢圓形狀之顯像液吐出 口 85c之顯現液,形成略扇形狀被吐出,如此被吐出之顯像 液之吐出氣勢,係比使用浸置液形成用喷嘴80a的場合還 大。如此做法藉一面給予壓力(衝擊)一面將顯像液塗敷至 基板G,剛才被形成之顯像液被攪拌,顯像反應形成更均 一的進行。如此顯像特性提昇,更明白的是得到均一的型 式’而且顯像時間被短縮。 尚且,顯像液吐出口85c的形狀,並不限定於如第9圖 所示之略橢圓形狀,即使為圓形與長方形等亦可。另外, 由顯像液吐出口 8兄所吐出之顯像液的型態也不限定於略 扇形狀,即使為圓錐狀等亦沒有關係。更進一步,顯像液 吐出口 85c,係沒有必要如第9圖所示被配置成並排在一直 線上,例如即使配置成多數列亦可。 在各送液路徑A· C,設置脫氣組件59a· 59c與三方閥 20 本紙張尺度翻巾gg家群(CNS) M規格⑵qx297公爱) 五、發明説明(丨8) 57a· 57c。形成可以個別地排出浸置液 顯像液與嘴霧喷嘴8〇e内之顯像液。但是J^80a内之 嗔嘴80a與嘴霧喷嘴·,係被供給相同 置液形成用 如在一方之喷嘴使时,即使由另 未& ’所以例 顯像液,亦可以無視其給於顯像雜之影響未使用噴嘴滴下 一使用上述之浸置液形成用喷嘴8〇a與嘴喷嘴8〇c,將同 -之顯像液塗敷至基板⑽場合之顯像處理製程,係如第 11圖之流程圖所示。在第11圖所示之顯像處理製程中,如 剛才-面參照第7圖之流程圖—面加以說明,將2個之浸置 液形成用噴嘴8Ga·隱設置於喷嘴保持臂51,對於不同组 之基板G,不採用所謂使用不同之顯像液α·Β連續地進行 處理之顯像處理餘。但是,由如第11®料㈣卜與由 步驟6及步驟8到㈣17之製程,係與由如第7圖所示之顯像 處理製程之步驟1、與由步驟6及步驟8到步驟17之製程相 同。 從而,詳細的說明由步驟6到步驟8之製程。在步驟6 中使用浸置液形成用喷嘴8Ga,在基板G上形成顯像液浸置 液後,使驅動浸置液形成,用喷嘴8〇a之升降機構58a保持於 上方位置(步驟7-1),另一面使升降機構58c驅動之喷霧喷 嘴80c保持於下方位置(步驟7_2)。而且,藉使用噴霧噴嘴 80c之浸置液形成用喷嘴8〇a,由所形成之顯像液浸置液之 上面進一步供給顯像液(步驟7-3),使顯像處理進行。 在該步驟7-3之製程中,即使一面以一定之低旋轉數使 基板G旋轉’一面由噴霧喷嘴80c使顯像液吐出亦可,即使 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 504739 五、發明説明(l9 ) 在使基板G旋轉之狀態移_步驟7·3以後之製程亦可。使 基板G旋轉由基板G-面排出—部之顯像液,另—方面藉塗 敷新的顯像液,提早顯像反應的進行,可以縮短處理時 若藉喷霧喷嘴8Ge.完成顯像液之塗敷的話,使噴霧喷嘴 80c之升降機構58c驅動保持於上方位置(步驟7_4),使噴嘴 保持臂51待避於外罩47外(步驟8)。進一步進行步之處 理。 在此,由旋轉吸盤4丨朝搬送臂19a收付基板G之步驟 16,在針對全部之基板G完成的場合,在三方閥57心7〇中, 藉關閉顯像液供給側之閥,夺丁開真空吸引侧之闊,排出浸 置液形成用喷嘴80a與噴霧噴嘴8〇c内之顯像液(步驟17,)。 如此,完成顯像處理。 其次,針對顯像液供給機構之別的實施型態一面參照 第12圖之平面圖一面加以說明。第12圖所示之顯像液處理 單T〇(DEV)24a’〜24c’,係具有安裝浸置液形成用噴嘴8(^、 喷霧喷嘴80c、與預先沖洗喷嘴6〇a之3個喷嘴之喷嘴保持臂 51 ’喷嘴保持臂51,係藉驅動機構52形成沿著導執53被驅 動。调節浸置液形成用喷,嘴8〇a、喷霧喷嘴8〇c、與預先沖 洗喷嘴60a之吐出口高度的位置之機構,被設置於喷嘴保持 臂51與分別之喷嘴之間。 預先沖洗喷嘴60a,係例如與沖洗喷嘴同樣,使用直管 狀之喷嘴之構造,使用朝基板G之喷霧喷嘴80c,在將一定 之顯像液塗敷至基板G後不久,持續將一定之沖洗液供給 至基板G ’使顯像反應停止完成任務。使用喷霧喷嘴8〇c使 本紙張尺度適用中國國家標準(娜)A4規格(21〇χ297公爱) -22 (請先閲讀背面之注意事項再填寫本頁) 、" 504739 A7 B7 五、發明説明(2〇 ) (請先閲讀背面之注意事項再填寫本頁) 均一的顯像反應進行後,立刻由預先沖洗喷嘴6〇a吐出沖洗 液,藉使顯像反應停止,將顯像液滯留於基板G上之時間 縮短,可以更提高顯像反應之均一性,形成可以得到具有 優良之形狀精度之型式。 在第12圖顯像處理單元(DEV)24,a〜24,c,加上預先沖 洗噴嘴60a預先沖洗噴嘴60也被設置。藉預先沖洗喷嘴6〇a 停止顯像反應後,係進行使用沖洗喷嘴6〇之沖洗處理。 訂— 牵 不用a兄在預先沖洗贺嘴60&’可以使其擔當沖洗噴嘴6〇 之任務。但是,在其場合,吐出顯像液之浸置液形成用喷 嘴80a與噴霧噴嘴80c,也另外在處理時形成位於基板(} 上,例如’沖洗處理完成為了移轉至旋轉乾燥處理,在使 噴嘴保持臂5 1移動使其由基板G待避時,有可能發生顯像 液由浸置液形成用喷嘴80a與噴霧噴嘴8〇c滴下到基板G 上。因如此顯像液之滴下,由於擔心對基板G發生顯像不 良,所以在沖洗處理之最後階段,僅吐出沖洗液之噴嘴位 於基板G上,最好採用供給沖洗液之型態。 在第13圖表示使用被安裝於噴嘴保持臂51之浸置液 形成用喷嘴80a、喷霧喷嘴80c、與預先沖洗喷嘴6〇a之顯像 處理製程之流程圖。第13圖所示由步驟1到步驟3之製程, 係與第7及11圖所示之由步驟丨到步驟3之製程相同。從而, 針對步驟3以後之製程詳細的加以說明。 依照步驟3,使旋轉吸盤41下降,將基板G保持於一定 位置之後,將噴嘴保持臂51配置於内罩46内之一定位置, 藉浸置液形成用噴嘴8〇a進行顯像液浸置液形成(步驟V. Description of the Invention (Π) The spray nozzle 80c of the coating supply is mounted on the nozzle holding arm 51. The immersion liquid forming nozzle 80a and the spray nozzle 80e are formed by the lifting mechanisms 58a and 58o, and the positions can be adjusted individually up and down. When the immersion liquid forming nozzle 80a and the spray nozzle 80c are attached to the nozzle holding arm 51, it is different from the case shown in FIG. 6 described above. For example, as shown in FIG. 10, the immersion liquid The forming nozzle 80a and the spray nozzle 80c constitute a liquid feeding path A · C of the developing solution, and the same developing solution is supplied, and the developing solution is initially formed using the immersion liquid forming nozzle 80a. After the immersion liquid, the developing liquid is further supplied from above the developing liquid immersion liquid using the spray nozzle 80c. The developing liquid formed in the slightly elliptical developing liquid discharge port 85c formed in the spray nozzle 80c is discharged in a slightly fan shape, and the discharging momentum of the developing liquid thus discharged is compared with the use of the immersion liquid forming nozzle 80a. The occasion is still big. In this way, the developing solution is applied to the substrate G by applying pressure (impact) while the developing solution just formed is stirred, and the development of the developing reaction proceeds more uniformly. With such improved development characteristics, it is clearer that a uniform pattern is obtained 'and the development time is shortened. In addition, the shape of the developing liquid discharge port 85c is not limited to the slightly elliptical shape shown in Fig. 9 and may be a circle, a rectangle, or the like. In addition, the type of the developing solution discharged from the developing solution discharge port 8 is not limited to a slightly fan shape, and it does not matter if it is conical or the like. Furthermore, the developing liquid discharge ports 85c need not be arranged side by side as shown in Fig. 9, for example, even if they are arranged in a plurality of rows. Degassing components 59a, 59c and three-way valves are provided in each of the liquid feeding paths A and C. 20 paper-size paper towels, gg family (CNS, M specifications, qx297, public love) 5. Description of the invention (8) 57a, 57c. The imaging liquid and the imaging liquid in the mouth mist nozzle 80e can be discharged separately. However, the mouthpiece 80a and the mouth mist nozzle in J ^ 80a are supplied with the same liquid formation for use as one of the nozzles, and can be ignored regardless of the imaging solution. The influence of the imaging noise is not applied by a nozzle. Using the above-mentioned nozzle 80a and nozzle 80c for the formation of the immersion liquid, the same-developing solution is applied to the substrate. Figure 11 shows the flowchart. In the developing process shown in FIG. 11, as described just now with reference to the flowchart in FIG. 7, the two immersion liquid forming nozzles 8Ga · are hidden in the nozzle holding arm 51. The substrates G of different groups do not use the so-called development processing surplus which is continuously processed using different development liquids α · B. However, the processes from the 11th material and the processes from step 6 and steps 8 to 17 are related to the process 1 from the development processing process shown in FIG. 7 and from step 6 and steps 8 to 17 The process is the same. Therefore, the process from step 6 to step 8 will be described in detail. In step 6, the immersion liquid forming nozzle 8Ga is used to form the developing liquid immersion liquid on the substrate G, and then the driving immersion liquid is formed, and the lifting mechanism 58a of the nozzle 80a is held at the upper position (step 7- 1) The other side keeps the spray nozzle 80c driven by the lifting mechanism 58c at the lower position (step 7_2). Further, by using the nozzle 80a for forming an immersion liquid of the spray nozzle 80c, a developing liquid is further supplied from the top of the formed developing liquid immersion liquid (step 7-3), and the developing process is performed. In the process of step 7-3, even if the substrate G is rotated with a certain low number of rotations, the developing liquid is ejected by the spray nozzle 80c, even if the paper size is in accordance with the Chinese National Standard (CNS) A4 specification ( 210X297 mm) 504739 V. Description of the invention (l9) The state of rotating the substrate G can be shifted to the process after step 7.3. The substrate G is rotated and discharged from the G-plane of the substrate, and a part of the developing solution is removed. On the other hand, by applying a new developing solution, the early development reaction proceeds, and the processing can be shortened if the spray nozzle 8Ge is used to complete the development. When the liquid is applied, the lifting mechanism 58c of the spray nozzle 80c is driven and held at the upper position (step 7_4), and the nozzle holding arm 51 is to be avoided from the cover 47 (step 8). Go further. Here, step 16 of receiving and paying the substrate G from the rotary chuck 4 to the transfer arm 19a is completed for all the substrates G. By closing the valve on the supply side of the developing solution in the three-way valve 57 and 70, the The opening of the vacuum suction side is wide, and the imaging liquid in the immersion liquid forming nozzle 80a and the spray nozzle 80c is discharged (step 17). In this way, development processing is completed. Next, another embodiment of the developer supply mechanism will be described with reference to the plan view of FIG. The developing solution processing units T0 (DEV) 24a ′ to 24c ′ shown in FIG. 12 are provided with three nozzles 8 (^, spray nozzle 80c, and pre-rinsing nozzle 60a) for forming an immersion liquid. Nozzle holding arm 51 'The nozzle holding arm 51 is driven along the guide 53 by the driving mechanism 52. The nozzle for forming the immersion liquid is adjusted, the nozzle 80a, the spray nozzle 80c, and the pre-rinsing The mechanism of the position of the ejection outlet height of the nozzle 60a is provided between the nozzle holding arm 51 and each nozzle. The pre-rinsing nozzle 60a has, for example, the structure of a straight tube-shaped nozzle similar to that of the flushing nozzle, and the substrate G is used. The spray nozzle 80c continues to supply a certain flushing liquid to the substrate G shortly after applying a certain developing solution to the substrate G to stop the development reaction and complete the task. The spray nozzle 80c is used to scale the paper Applicable to Chinese National Standard (Na) A4 specification (21〇χ297 公 爱) -22 (Please read the precautions on the back before filling this page), " 504739 A7 B7 V. Description of the invention (2〇) (Please read the back first (Notes on this page, please fill out this page) Uniform imaging response Immediately after the operation, the flushing liquid is discharged from the pre-rinsing nozzle 60a. By stopping the developing reaction, the time during which the developing solution stays on the substrate G is shortened, and the uniformity of the developing reaction can be further improved. The shape accuracy type is shown in Fig. 12. The development processing unit (DEV) 24, a to 24, and c, plus the pre-rinsing nozzle 60a are also set. The pre-rinsing nozzle 60a is used to stop the development reaction. After that, the flushing treatment using the flushing nozzle 60 is performed. Order-It is not necessary to flush the nozzle 60 in advance, so that it can perform the task of flushing the spraying nozzle 60. However, in this case, the developer is discharged by soaking The liquid-forming nozzle 80a and the spray nozzle 80c are also formed on the substrate () during processing. For example, 'rinsing processing is completed. In order to transfer to the spin-drying processing, the nozzle holding arm 51 is moved to be avoided by the substrate G. At this time, the developing solution may drop onto the substrate G from the immersion liquid forming nozzle 80a and the spray nozzle 80c. Because of the dropping of the developing solution, there is a fear that a developing failure may occur on the substrate G, so In the final stage of the rinsing process, the nozzle that only discharges the rinsing liquid is located on the substrate G, and it is preferable to use a type that supplies the rinsing liquid. Fig. 13 shows the use of the immersion liquid forming nozzle 80a and the spray nozzle mounted on the nozzle holding arm 51. Flow chart of the imaging processing process of the mist nozzle 80c and the pre-rinsing nozzle 60a. The process from step 1 to step 3 shown in FIG. 13 is from step 丨 to step 3 shown in FIGS. 7 and 11 The manufacturing process is the same. Therefore, the manufacturing process after step 3 will be described in detail. According to step 3, the rotary chuck 41 is lowered, and the substrate G is held at a certain position, and then the nozzle holding arm 51 is arranged at a certain position in the inner cover 46. The formation of the developing liquid immersion liquid by the immersion liquid forming nozzle 80a (step
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)在此時,/文置液形成用噴嘴8〇a之顯像液吐出口 a調 (請先閲讀背面之注意事項再填寫本頁) 整高度位置,使其位置於比喷霧喷嘴8〇c之顯像液吐出口 85c與預先沖洗噴嘴6〇a之沖洗液吐出口還下方。 -訂· 其次,雖然調整高度位置使浸置液形成用噴嘴8〇a上升 至接近喷嘴保持臂51,但是使喷霧喷嘴8〇c的顯像液吐出口 85c位置於最下方,由被形成於基板G上之顯像液浸置液之 上面進一步供給顯像液(步驟5a)。藉喷霧喷嘴80c在完成顯 像液之塗敷之後,雖然調整高度位置使噴霧喷嘴8〇〇上升至 接近喷嘴保持臂51,但是進行預先沖洗噴嘴6〇a的位置調 節,讓預先沖洗噴嘴6〇a的沖洗液土出口來至比喷霧喷嘴 80a · 80c的顯像液吐出口 85a · 85c還低的位置。另外,使 内罩46與外罩47上升保持於上段位置(步驟6a)。其後,由 預先沖洗噴嘴60a在約略與開始沖洗液的吐出同時,開始基 板G的旋轉,另外,開始由排氣口钧之排氣動作(步驟以)。 在經過一定時間之後,完成由預先沖洗噴嘴6〇a吐出沖洗 液,使喷嘴保持臂51退避至外罩47之外,使沖洗喷嘴6〇朝 基板G上之一定位置移動(步驟8a)。 使内罩46與外罩47下降保持至下段位置後(步驟9a), 提昇基板G的旋轉數開始由沖洗喷嘴6〇吐出沖洗液(步驟 10a) °藉冲洗贺鳴60若完成一定時間之沖洗處理的話,就 停止沖洗液的吐出,使沖洗喷嘴6〇退避至外罩47外(步驟 47)。其次,使内罩46與外罩47上升保持於上方位置(步驟 12a) ’使基板G高速旋轉進行旋轉乾燥(步驟13a)。此時, 最好吹氮氣至基板G。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 24 ' 504739 A7 B7 五、發明説明(22 (請先閲讀背面之注意事項再填寫本頁) 在旋轉乾燥完成後停止基板G的旋轉,使内罩46與外 罩47朝下段位置下降保持,同時使旋轉吸盤41上升(步驟 14a)。而且,將搬送臂19a插入顯像處理單元(DEV)24a,〜 24c’進行基板G的收付,其後使用電離進行除去發生於旋轉 吸盤41之靜電氣(除電)(步驟15a)。 針對全部之基板G ’在完成顯像處理之後,排出浸置 液开>成用喷嘴80a與喷霧喷嘴80c内之顯像液(步驟i6a)。 如此藉使用預先沖洗喷嘴60a,由於可以藉喷霧喷嘴 8〇c縮短由顯像液之塗敷終了到沖洗液之開始吐出之時 間,在確保顯像反應之均一性之狀態,形成可以停止顯像 反應,可以得到均一且形狀精度優良之型式。另外,在上 述製程,在步驟7a中開始基板G的旋轉,但藉噴霧噴嘴8〇c 以疋之低旋轉數一面使基板G旋轉一面進行顯像液的塗 敷(步驟5a) ’在使基板G旋轉之狀態,最好藉預先沖洗噴嘴 6〇開始吐出沖洗液。在此種場合,可以降低一面使基板g 旋轉一面進行顯像所發生之旋渦狀的顯像痕跡的發生。 其次,針對顯像液供給機構之進一步之其他實施型 恶’一面參照第14圖之平面圖一面加以說明。第圖所示 之顯像處理單元(DEV)24a,,〜24c,,,與第丨2圖所示之顯像 處理單元(DEV)24a,〜24c,相比後,在安裝有沖洗喷嘴6〇 之沖洗喷嘴臂54,更安裝有高壓之沖洗箱61之此點不同。 該高壓沖洗箱61,係具有底面被開口之形狀,在其内 部設置沖洗噴霧喷嘴62,用以以比沖洗噴嘴6〇還大之吐出 壓供、七冲洗液於基板g。作為該沖洗喷霧噴嘴a,係適當) At this time, adjust the liquid discharge port a of the nozzle 8oa for the formation of the liquid (please read the precautions on the back before filling this page). Adjust the height position so that it is positioned higher than the spray nozzle 8o. The developing liquid discharge port 85c of c and the washing liquid discharge port of the pre-rinsing nozzle 60a are also below. -Ordering Secondly, although the height position is adjusted so that the nozzle for forming an immersion liquid 80a rises to be close to the nozzle holding arm 51, the developing liquid discharge port 85c of the spray nozzle 80c is positioned at the bottom and is formed by A developing solution is further supplied on top of the developing solution immersion solution on the substrate G (step 5a). After the application of the developing liquid by the spray nozzle 80c, although the height position is adjusted to raise the spray nozzle 800 to close to the nozzle holding arm 51, the position of the pre-rinsing nozzle 60a is adjusted so that the pre-rinsing nozzle 6 is adjusted. The flushing liquid soil outlet of 〇a comes to a position lower than the developing liquid discharge outlets 85a and 85c of the spray nozzles 80a and 80c. In addition, the inner cover 46 and the outer cover 47 are raised and held at the upper position (step 6a). Thereafter, the rotation of the substrate G is started by the pre-rinsing nozzle 60a at about the same time as the discharge of the rinsing liquid is started, and the exhaust operation from the exhaust port is started (step 1). After a certain period of time has elapsed, the discharge of the washing liquid from the pre-rinsing nozzle 60a is completed, the nozzle holding arm 51 is retracted out of the cover 47, and the washing nozzle 60 is moved to a certain position on the substrate G (step 8a). After lowering the inner cover 46 and the outer cover 47 to the lower position (step 9a), the number of rotations of the lifting substrate G starts to discharge the washing liquid from the washing nozzle 60 (step 10a). If so, the discharge of the rinse liquid is stopped, and the rinse nozzle 60 is retracted to the outside of the cover 47 (step 47). Next, the inner cover 46 and the outer cover 47 are raised and held at the upper position (step 12a) ', and the substrate G is rotated at high speed to perform spin drying (step 13a). At this time, it is preferable to blow nitrogen to the substrate G. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 24 '504739 A7 B7 V. Description of the invention (22 (Please read the precautions on the back before filling this page) Stop the substrate G after the spin drying is completed Rotate to lower the inner cover 46 and outer cover 47 to the lower position, and raise the rotary chuck 41 (step 14a). The transfer arm 19a is inserted into the development processing unit (DEV) 24a, and the substrate G is collected. After that, the static electricity generated by the spin chuck 41 is removed (elimination) using ionization (step 15a). After all the substrates G 'have completed the development process, the immersion liquid is discharged > The developing liquid in the mist nozzle 80c (step i6a). By using the pre-rinsing nozzle 60a in this way, the spray nozzle 80c can be used to shorten the time from the end of the application of the developing liquid to the beginning of the spitting out of the washing liquid. The state of the uniformity of the development reaction is formed so that the development reaction can be stopped, and a uniform and excellent shape accuracy can be obtained. In addition, in the above process, the rotation of the substrate G is started in step 7a. The mist nozzle 80c applies the developing solution while rotating the substrate G with a low rotation number (step 5a). In the state where the substrate G is rotated, it is best to start the cleaning solution by pre-rinsing the nozzle 60. In this case, it is possible to reduce the occurrence of vortex-shaped development marks that occur while rotating the substrate g while developing. Second, referring to FIG. 14 for further implementation of the developing liquid supply mechanism. The plan view will be explained. The development processing units (DEV) 24a, ~ 24c, shown in Fig. 2 are compared with the development processing units (DEV) 24a, ~ 24c shown in Fig. 2; The difference is that the flushing nozzle arm 54 equipped with the flushing nozzle 60 is equipped with a high-pressure flushing tank 61. The high-pressure flushing tank 61 has a shape in which a bottom surface is opened, and a flushing spray nozzle 62 is provided in the interior. With a pressure larger than the washing nozzle 60, a pressure supply of seven washing liquids is applied to the substrate g. As the washing spray nozzle a, it is appropriate
504739 A7 B7 五、發明説明(23 的使用吐出沖洗液成略圓錐狀之圓錐形喷嘴等。另外,在 高壓沖洗箱61設置排氣機構63,用以由高壓沖洗箱6丨的内 部進行吸引排氣。 藉使用沖洗喷霧噴嘴62,以較大之吐出壓將沖洗液供 給於基板G,可以有效果的除去基板G的顯像液殘渣。另 外,藉沖洗液以高速衝撞於基板G,沖洗液霧化,藉動作 排氣機構63回收該霧,可以防止霧擴散至水槽48内污染了 顯像處理單元(DEV)24a,,〜24c,,的内部。 使用沖洗喷霧喷嘴62之沖洗處理,係在使用沖洗喷嘴 60之基板G的沖洗處理後、旋轉乾燥處理之前進行,藉沖 洗噴霧噴嘴62之沖洗處理以外之製程,係依照剛才第13圖 所示之製程來進行。在第1 5圖表示使用沖洗噴霧噴嘴62的 場合之顯像處理製程之流程圖。 由步驟1到步驟7a之製程與由步驟14a到步驟i6a之製 程,係與剛才第13圖所示之步驟i到步驟7&之製程及由步驟 14a到步驟16a之製程同樣的進行。在此,以下針對由步驟 7a到步驟14a之製程加以說明。 若由預先沖洗喷嘴60a供給沖洗液至基板g完成沖洗 處理的話,則停止由預先沖洗喷嘴6〇a吐出沖洗液,使喷嘴 保持臂51退避於外罩47外,將沖洗喷嘴臂54配置於内罩46 内之一定位置(步驟8b)。持續,使内罩46與外罩47下降(步 驟9b),提昇基板G的旋轉數由沖洗喷嘴6〇開始朝基板〇供 給沖洗液(步驟10B)。此時,由基板〇被甩開之沖洗液,主 要被由排水口 50b廢棄。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 26 (請先閲讀背面之注意事項再填寫本頁) 、一叮— 504739 A7 __B7_ 五、發明説明(24 ) 其次,停止由沖洗液喷嘴60吐出沖洗液,使内罩46與 外罩47上升保持於上段位置(步驟lib),開始由沖洗噴霧喷 嘴62吐出沖洗液,同時藉使排氣機構63動作進行高壓沖洗 箱61内之排氣(步驟12b)。依該沖洗喷霧喷嘴62藉沖洗處 理,可以使顯像液的殘渣變成極少。 若藉沖洗喷霧喷嘴62完成沖洗處理的話,則停止沖洗 液的吐出,使沖洗喷嘴臂54退避至外罩47外,進一步提昇 基板G的旋轉數,一面將氮氣吹氣於基板g—面進行旋轉乾 燥(步驟13b)。該步驟13b以後,係由剛才說明之步驟14依 照步驟16a的製程處理基板G。 尚且,如上述,使用沖洗噴霧喷嘴62之處理(步驟 lib),係最好將步驟46與步驟47在保持於上段位置之狀態 來進行。此乃由沖洗噴霧喷嘴62被吐出之沖洗液,由於被 霧化所以形成由排氣口 49比由排水口 50a容易被排氣,將内 罩46與外罩47保持於上段,把覆蓋基板g之空間作成狹 小’由於可以提高排氣口 49之排氣效率。藉與此等相同理 由,基板G之旋轉乾燥,係在將内罩46與外罩47保持於上 段位置之狀態被進行。尚且,在步驟Ua及步驟llfc中,朝 排水管50a流入之沖洗液,由於幾乎不包含顯像液,所以顯 像液濃度可以利用廢棄低排液之排液流路廢棄。 以上’已針對本發明之實施型態加以說明,但是本發 明並不限定於前述實施型態,在不逸脫其主旨範圍可以變 形貫施。例如’如第5圖所示,在1個之喷嘴保持臂51安裝2 個之浸置液形成用噴嘴8如· 8〇b的場合,進一步在噴嘴保 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公爱) 27 (請先閲讀背面之注意事項再填寫本頁)504739 A7 B7 V. Description of the invention (23 uses a conical nozzle that discharges the washing liquid into a slightly conical shape, etc. In addition, an exhaust mechanism 63 is provided in the high-pressure washing tank 61 for suction and discharge from the inside of the high-pressure washing tank 6 丨By using the flushing spray nozzle 62 and supplying the flushing liquid to the substrate G at a relatively large discharge pressure, the developing liquid residue on the substrate G can be effectively removed. In addition, the flushing liquid is used to collide with the substrate G at a high speed to rinse The liquid is atomized, and the mist is recovered by the operation exhaust mechanism 63, which can prevent the mist from spreading to the inside of the water tank 48 and contaminating the interior of the development processing unit (DEV) 24a, ~ 24c, .... Rinse treatment using the flushing spray nozzle 62 It is performed after the substrate G using the rinse nozzle 60 and before the spin-drying treatment, and the processes other than the rinse treatment by the rinse spray nozzle 62 are performed according to the process shown in Fig. 13 just now. The figure shows the flowchart of the imaging processing process in the case of using the flushing spray nozzle 62. The process from step 1 to step 7a and the process from step 14a to step i6a are the same as step i shown in FIG. 13 just now. The process of step 7 & and the process from step 14a to step 16a are performed in the same way. Here, the process from step 7a to step 14a will be described below. If the rinse solution is supplied from the pre-rinsing nozzle 60a to the substrate g to complete the rinse process Then, the discharge of the flushing liquid from the pre-flushing nozzle 60a is stopped, the nozzle holding arm 51 is retracted from the outer cover 47, and the flushing nozzle arm 54 is arranged at a certain position inside the inner cover 46 (step 8b). Continue to make the inner cover 46 The cover 47 is lowered (step 9b), and the number of rotations of the lifted substrate G is started from the rinse nozzle 60 to supply the rinse liquid to the substrate 0 (step 10B). At this time, the rinse liquid that is thrown away by the substrate 0 is mainly discharged from the drain 50b discarded. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 public love) 26 (Please read the precautions on the back before filling out this page), Yiding — 504739 A7 __B7_ V. Description of the invention (24) Secondly, The discharge of the washing liquid from the washing liquid nozzle 60 is stopped, the inner cover 46 and the outer cover 47 are raised and maintained at the upper position (step lib), and the discharge of the washing liquid from the washing spray nozzle 62 is started. The three-action operation exhausts the high-pressure flushing tank 61 (step 12b). According to the flushing spray nozzle 62, the residue of the developing solution can be reduced by the flushing process. If the flushing spray nozzle 62 is used to complete the flushing process, Stop the rinsing of the rinsing liquid, make the rinsing nozzle arm 54 retreat out of the cover 47, further increase the number of rotations of the substrate G, and spin dry the gas while blowing nitrogen on the substrate g (step 13b). After this step 13b, Step 14 just described processes the substrate G in accordance with the process of step 16a. Furthermore, as described above, the processing (step lib) using the flushing spray nozzle 62 is preferably performed in a state where the steps 46 and 47 are maintained at the upper position. This is because the flushing liquid discharged from the flushing spray nozzle 62 is formed by being atomized. The exhaust port 49 is easier to be exhausted than the drain port 50a. The inner cover 46 and the outer cover 47 are held at the upper stage, and the cover substrate g The space is made narrower because the exhaust efficiency of the exhaust port 49 can be improved. For the same reason, the spin-drying of the substrate G is performed while the inner cover 46 and the outer cover 47 are held at the upper position. Furthermore, in step Ua and step 11fc, the flushing liquid flowing into the drain pipe 50a contains almost no developing solution, so the developing solution concentration can be discarded by using the draining flow path of the waste low-draining solution. The above 'has been described with respect to the implementation mode of the present invention, but the present invention is not limited to the foregoing implementation mode, and may be modified and implemented without departing from the scope of the invention. For example, as shown in FIG. 5, when two nozzles for immersion liquid formation 8 such as · 80b are installed on one nozzle holding arm 51, Chinese national standard (CNS) A4 is further applied to the paper size of the nozzle. Specifications (21〇χ297 公 爱) 27 (Please read the precautions on the back before filling in this page)
五、發明説明(25) 持臂51安|縣沖洗噴嘴術,即使在各個之喷嘴設置升降 :構構成可以調節處理液之吐出口的位置亦可。在該場 二’例如使用浸置液形成用喷嘴8〇a’在短時間在基板处 一度形成顯像液浸置液後,由相同浸置液形成用喷嘴8〇a 將顯像液進-步供給於顯像液徑向直業,在經過一定之顯 像處’間可以進行所謂由預先沖洗喷嘴術將沖洗液供 給於基板G,使顯像反應停止之處理。 另外,設置2個噴嘴保持臂51,在分別之臂安裝各“固 之浸置液形成用噴嘴80a、噴霧噴嘴8〇c、預先沖洗喷嘴 _,在每個臂構成可以吐出不同種類及/或濃度之顯像液 後’使用顯像液對於不同組之基板G,形成可以容易的對 應顯像處理。可以安裝於喷嘴保持臂51之噴嘴的數目是任 意的,例如,在1個之噴嘴保持臂51設置3個以上之浸置液 形成用喷嘴80a(80b)或喷霧噴嘴80c,進一步即使設置預先 沖洗噴嘴60a亦可。被設置於丨台之顯像處理單元⑴Ev)24a 〜24c之噴嘴保持臂51之數目,係可以做成2個以上。 作為保持基板G之裝置,係如上述實施型態,並不限 疋於藉吸著力保持基板G之旋轉吸盤41,例如,在比基板G 還大之旋轉板上被形成凸之多數固定銷上載置基板〇,在 使基板G旋轉之際,可以使用基板(3之端面的一定位置,例 如在四角以其他之銷等保持基板G之機械的方法,使基板G 的位置不致於偏離。 在顯像處理製程中,使内罩46與外罩47升降進行顯像 之之甩開、沖洗處理、旋轉乾燥時之位置調節,但將内罩 504739 A7 B7 五、發明説明(26 46與外罩47作成固定,一面使旋轉吸盤41升降保持於一定 位置,一面可以進行顯像液之甩開等之處理。進一步,在 上述實施型悲,已舉LCD基板作為被處理基板為例加以說 明,但本發明亦可以適用於半導體晶圓等之其他基板之顯 像處理。 〈發明的效果〉 如上所述,若依據本發明,由於在丨台之顯像處理裝 置(顯像處理單元)没置多數顯像液吐出喷嘴,用以將顯像 液塗敷於浸置液形成用噴嘴與喷霧噴嘴等之基板,所以在 需要供給不同種類及/或不同濃度之顯像液的場合,形成可 以以替換使用之噴嘴來應付。依此等與僅設置丨個之喷嘴的 場合相比較,不會錯失進行噴嘴洗淨的時間,提昇生產性, 另外,藉不同顯像液之混合減低特性降低與發生微粒, 成可以得到高品質的基板。 另外,在基板上在形成顯像液浸置液後使用喷霧 嘴,藉一面給予壓力(衝擊)一面進行供給顯像液,由於 像液浸置液被攪拌,顯像處理形成更均一的進行,所以^ 像特性提昇,得到更明胯.均—之顯像型式,而且顯像相 被短縮。纽點也可以提昇生產性,得到高品質的基板, 而且形成可以對應型式之微細化。 更進一步,在預先沖洗喷嘴被安裝於與顯像液吐出噴 :相同之喷嘴保持臂的場合,由於在顯像液塗敷後不空出 髮之間隙供給沖洗液,就可以使顯像反應停止,所以 以#到所,胃顯像特性的提昇、明白的形成均一之型式 形 顯 顯 可 與 本紙張尺度適财咖家標準(CNS) A4規格⑵〇心7公3V. Description of the invention (25) The arm 51A | county flush nozzle operation, even if the lifting and lowering of each nozzle is provided: the structure can adjust the position of the outlet of the processing liquid. In this field, for example, a developing solution immersion liquid is formed on the substrate in a short period of time using a nozzle 80a for forming an immersion liquid, and the developing liquid is fed into the nozzle 8a by the same immersion liquid formation- The supply of the developing solution is performed in a radial direction step by step, and a process of supplying the washing solution to the substrate G by a pre-rinsing nozzle technique can be performed between a certain developing place and a process of stopping the developing reaction. In addition, two nozzle holding arms 51 are provided, and each of the "solid immersion liquid forming nozzle 80a, the spray nozzle 80c, and the pre-rinsing nozzle _ are attached to each arm, and each arm structure can discharge different types and / or After the concentration of the developer solution, the developer solution can be easily used for the development of different groups of substrates G. The number of nozzles that can be mounted on the nozzle holding arm 51 is arbitrary, for example, one nozzle holder The arm 51 is provided with three or more immersion liquid forming nozzles 80a (80b) or spray nozzles 80c, and even a pre-rinsing nozzle 60a can be provided. The imaging processing unit (Ev) 24a to 24c installed on the platform The number of the holding arms 51 can be made more than two. As a device for holding the substrate G, it is the same as the above embodiment, and is not limited to the rotating chuck 41 holding the substrate G by the suction force. On a large rotating plate, the substrate is placed with a large number of convex pins formed on the rotating plate. When the substrate G is rotated, a substrate (a fixed position on the end surface of the substrate 3, for example, a mechanism for holding the substrate G at the four corners with other pins, etc.) can be used. of In the development processing process, the inner cover 46 and the outer cover 47 are raised and lowered to perform image development, shake off, rinse, and rotate and dry the position adjustment, but the inner cover 504739 A7 B7 V. Description of the invention (26 46 is fixed with the outer cover 47, while the rotary sucker 41 is lifted and held at a certain position, and the processing liquid can be shaken off. Further, in the above embodiment, the LCD substrate has been given The substrate to be processed is described as an example, but the present invention can also be applied to the development processing of other substrates such as semiconductor wafers. <Effects of the Invention> As described above, according to the present invention, due to the development processing in the stage The device (developing processing unit) is not provided with a large number of developing liquid discharge nozzles, and is used to apply the developing liquid to substrates such as nozzles for forming immersion liquid and spray nozzles. Therefore, different types and / or different concentrations need to be supplied. In the case of a developing solution, the nozzle can be replaced with a replacement nozzle. Compared with the case where only one nozzle is provided, the time for nozzle cleaning is not lost. Improve the productivity, and reduce the characteristics and the generation of particles by mixing the different developing liquids, so that high-quality substrates can be obtained. In addition, after forming the developing liquid immersion liquid on the substrate, use a spray nozzle and give it by one side. The development liquid is supplied on the pressure (impact) side, because the imaging liquid immersion liquid is stirred, and the development process is formed more uniformly, so the image characteristics are improved and a clearer image is obtained. The phase is shortened. The kink point can also improve productivity and obtain a high-quality substrate, and it can be formed to correspond to the miniaturization of the type. Furthermore, the pre-rinsing nozzle is mounted on the same nozzle holding arm as the developing solution discharge nozzle: In this case, since the flushing liquid is supplied in the gap between the start and the start of the imaging solution, the imaging reaction can be stopped. Therefore, with ##, the gastric imaging characteristics are improved and the formation of the imaging is uniform. Compatible with this paper standard CNS A4 specification ⑵〇 心 7 公 3
訂| (請先閲讀背面之注意事項再填寫本頁) 504739 A7 _________B7_____ 五、發明説明(27 ) 縮短顯像處理的時間之效果。 〈圖面的簡單說明〉 第1圖為表示具有本發明之顯像處理裝置(顯像處理單 元)(DEV)24a〜24c之LCD基板之保護膜塗敷•顯像處理系 統100之平面圖。 第2圖為表示本發明之顯像處理裝置之一實施形態之 平面圖。 第3圖為表示本發明之顯像處理裝置之一實施形態之 截面圖。 第4圖為表示本發明之顯像處理裝置之控制系統之一 實施形態之說明圖。 第5圖為表示使用本發明之顯像處理裝置之顯像液喷 嘴之一實施形態之立體圖。 第6圖為表示使用第5圖之顯像液吐出喷嘴的場合,朝 顯像液吐出喷嘴之顯像液之送液路徑之說明圖。 第7圖為表示使用第5圖之顯像液吐出喷嘴的場合之 顯像處理製程之說明圖。 第8圖為表示在旋轉乾燥時朝基板供給氣體之一實施 型態之說明圖。 第9圖為表示被使用於本發明之顯像處理裝置之顯像 液吐出喷嘴之別的實施型態之透視圖。 第10圖為表示朝使用如第9圖所示顯像液吐出喷嘴的 場合之顯像液吐出喷嘴供給顯像液的路徑之一實施例之說 明圖。 本紙張尺度適用中國國豕標準(OB) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)Order | (Please read the notes on the back before filling this page) 504739 A7 _________B7_____ V. Description of the invention (27) The effect of shortening the development processing time. <Brief Description of Drawings> Fig. 1 is a plan view showing a protective film coating and developing processing system 100 for an LCD substrate having a developing processing device (developing processing unit) (DEV) 24a to 24c of the present invention. Fig. 2 is a plan view showing an embodiment of the developing processing apparatus of the present invention. Fig. 3 is a sectional view showing an embodiment of a developing processing apparatus of the present invention. Fig. 4 is an explanatory diagram showing an embodiment of a control system of the development processing apparatus of the present invention. Fig. 5 is a perspective view showing an embodiment of a developing liquid nozzle using the developing processing apparatus of the present invention. Fig. 6 is an explanatory view showing a liquid feeding path of the developing solution toward the developing solution discharge nozzle when the developing solution discharge nozzle of Fig. 5 is used. Fig. 7 is an explanatory diagram showing a developing process when the developing liquid discharge nozzle of Fig. 5 is used. Fig. 8 is an explanatory view showing an embodiment in which gas is supplied to a substrate during spin drying. Fig. 9 is a perspective view showing another embodiment of a developing liquid discharge nozzle used in the developing processing apparatus of the present invention. Fig. 10 is an explanatory view showing an embodiment of a path for supplying developer liquid to a developer discharge nozzle in the case where the developer discharge nozzle shown in Fig. 9 is used. This paper size applies to China National Standard (OB) A4 (210X297 mm) (Please read the precautions on the back before filling this page)
30 504739 A7 B7 五、發明説明(28 ) 第11圖為表示使用第9圖所示顯像液吐出喷嘴的場合 之顯像處理製程之說明圖。 第12圖為表示本發明之顯像處理裝置之其他之實施 型態之平面圖。 第13圖為表示使用第12圖所示顯像液吐出喷嘴的場 合之顯像處理製程之說明圖。 第14圖為表示本發明之顯像處理裝置之更進一步之 其他之實施型態之平面圖。 第15圖為表示使用第14圖之沖洗喷霧喷嘴的場合之 顯像處理製程之說明圖。 31 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 504739 A7 B7 五、發明説明(29 元件標號對照 1…匣區 2…處理部 3…界面部 24a · 24b · 24c、24a’ · 24b’ 24c’ · 24a” · 24b” · 24c”》 顯像處理單元(DEV) 41…旋轉吸盤 46…内罩 47…外罩 48…水槽 51…喷嘴保持臂 54…沖洗喷嘴臂 57a、57b···三方閥 58a〜58c···升降機構 59a〜59c…脫氣組件 60…沖洗喷嘴 60a···預先沖洗喷嘴 61…高壓沖洗箱 62…沖洗喷霧喷嘴 80a· 80b···浸置液形成用喷嘴 8〇c…喷霧喷嘴 100…保護膜塗敷•顯像處理 糸統 G…基板(被處理基板) (請先閱讀背面之注意事項再填寫本頁) 32 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)30 504739 A7 B7 V. Description of the invention (28) Fig. 11 is an explanatory diagram showing a developing process in the case where the developing liquid discharge nozzle shown in Fig. 9 is used. Fig. 12 is a plan view showing another embodiment of the development processing apparatus of the present invention. Fig. 13 is an explanatory diagram showing a development processing process using a developing solution discharge nozzle shown in Fig. 12; Fig. 14 is a plan view showing still another embodiment of the image processing apparatus of the present invention. Fig. 15 is an explanatory diagram showing a development process when the flushing spray nozzle of Fig. 14 is used. 31 (Please read the precautions on the back before filling this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 504739 A7 B7 V. Description of the invention (29 Component label comparison 1 ... box area 2 ... processing Section 3 ... Interface section 24a · 24b · 24c, 24a '· 24b' 24c '· 24a "· 24b" · 24c ”》 Development processing unit (DEV) 41… Swivel suction cup 46… Inner cover 47… Outer cover 48… Water tank 51 ... Nozzle holding arm 54 ... Flushing nozzle arms 57a, 57b ... Three-way valves 58a to 58c ... Lifting mechanisms 59a to 59c ... Degassing assembly 60 ... Flushing nozzle 60a ... Flushing nozzle 61 in advance ... High pressure flushing box 62 ... Rinse spray nozzle 80a · 80b ·· Nozzle for forming immersion liquid 80c ... Spray nozzle 100 ... Protective film coating • Development processing system G ... Substrate (substrate to be processed) (Please read the note on the back first Please fill in this page again for details) 32 This paper size applies to China National Standard (CNS) A4 (210X297 mm)
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JP2000255113A JP3926544B2 (en) | 2000-08-25 | 2000-08-25 | Development processing equipment |
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JP3765411B2 (en) * | 2002-05-29 | 2006-04-12 | 東京エレクトロン株式会社 | Development processing method and apparatus |
JP4391387B2 (en) | 2004-10-27 | 2009-12-24 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
JP2007305864A (en) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | Developing method and manufacturing method of semiconductor device using the same |
KR101036603B1 (en) * | 2008-11-26 | 2011-05-24 | 세메스 주식회사 | Nozzle and Apparatus for Processing A Substrate The Same |
KR101041872B1 (en) | 2008-11-26 | 2011-06-16 | 세메스 주식회사 | Nozzle, Apparatus and method for Processing A Substrate The Same |
JP4853537B2 (en) * | 2009-03-13 | 2012-01-11 | 東京エレクトロン株式会社 | Developing device, developing method, and storage medium |
JP5314723B2 (en) * | 2011-03-03 | 2013-10-16 | 東京エレクトロン株式会社 | Development device |
KR102245499B1 (en) * | 2014-02-03 | 2021-04-29 | 삼성디스플레이 주식회사 | Developing apparatus and developing method using the same |
JP6528546B2 (en) * | 2014-09-04 | 2019-06-12 | 東京エレクトロン株式会社 | Developing method, developing device and storage medium |
KR101769440B1 (en) | 2015-02-27 | 2017-08-21 | 세메스 주식회사 | Method for treating substrate |
KR102125793B1 (en) * | 2018-04-20 | 2020-06-25 | 세메스 주식회사 | substrate processing apparatus |
KR102587859B1 (en) * | 2020-07-20 | 2023-10-13 | 세메스 주식회사 | Nozzle unit, apparatus and method for treating substrate using the same |
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JPH088163A (en) * | 1994-06-21 | 1996-01-12 | Sony Corp | Pattern formation method |
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JP2000153210A (en) * | 1998-11-19 | 2000-06-06 | Hitachi Ltd | Rotary substrate treating device |
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