502330 A7 B7 4 915twf.doc/008 五、發明説明q ) 本發明是有關於一種半導體製程，且特別是有關於 一種晶片的處理方法。 (請先閲讀背面之注意事項再填寫本頁) 在晶圓廠傳統砂晶片後段製程中，晶片在通過晶片 接受度測試(wafer acceptance test)後，最後就是進行晶背 硏磨，然後再出貨。進行晶背硏磨的目的是爲了方便後 續進行的晶片切割，以利包裝。然而，晶片硏磨是一個 很髒的製程，容易產生污染的問題，因此爲了防止晶片 的正面被污染，或者遭到破壞損毀，所以在晶背硏磨之 前，會在晶片正面上先貼一層膠布，來達到保護的目的。 但是往往在晶片磨完之後，要撕下這層膠布時丨膠布上 的黏膠殘留在晶片上的情形時常發生，而被客戶退貨， 相當可惜。此外，即使未遭客戶退貨，這些殘膠也可能 會造成焊墊接合(Pad Bonding)不良，或者包裝上的問題。 第1A圖至第1D圖繪不習知一種晶片的處理方法的 流程剖面圖。 請參照第1A圖’提供一'晶片1 〇2 ’此晶片1 〇2亘有 正面l〇3a和背面10；3b。其中，晶片正面l〇3a上形成有 各種半導體元件（未繪示）。 經濟部智慧財產局員工消費合作社印製 請參照第1B圖，爲了防止晶片正面l〇3a在後，續曰$ 背硏磨步驟中被污染，或者遭到破壞損毀，所以在 103b硏磨之前，會在晶片正面l〇3a上先貼一層膨布1〇4。 請參照第1C圖，進行晶背硏磨1〇6。硏磨後的晶片 標記爲102a。 請參照第1D圖，在晶片l〇2a磨完之後，要撕下這 3 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） 502330 A7 B7 4 915twf.doc/008 五、發明説明（γ) 層膠布1〇4(第1C圖）時，膠布1〇4上的黏膠108殘留在 晶片102上的情形時常發生，而被客戶退貨，相當可惜。 此外，即使未遭客戶退貨，這些殘膠108也可能會造成 焊墊接合(Pad Bonding)不良，或者包裝上的問題。 本發明提供一種晶片的處理方法，此晶片具有正反 兩面，其中晶片反面將進行一個會污染該晶片正面的製 程。首先，形成保鮮膜覆蓋該晶片正面。接著，在保鮮 膜上貼上膠布。之後，進行上述污染製程。然後，撕掉 膠布，此時保鮮膜會一起被撕去。 所謂的污染製程可以是以化學機械硏磨法硏磨該晶 片反面，又或者爲一去垢灰化（descum ash)步驟。 上述保鮮膜較佳的材質爲聚乙烯（PE)或聚氯乙烯 (PVC)。其形成方法可以是先在晶片正面上噴灑一液態保 鮮膜，接著靜置晶片，使液態保鮮膜因接觸空氣而固化 成固態保鮮膜。其中，在噴灑液態保鮮膜時，可旋轉晶 片以增加噴灑的均勻性。至於晶片靜置的時間則約爲3 至5分鐘。 本發明處理晶片的程序簡單，且本發明提出之保鮮 膜可隨同膠布一起被掀掉帶走。 此外’本發明不但可利用保護膜避免殘膠問題，亦可 利用去垢灰化（Descum Ash)步驟避免焊墊接合（ρ“ Bonding)不良等問題。 以上所述本發明之特點’並不足以代表本發明所有可 能具有的特點。熟悉此技藝者’可在以下實施例內容中， 4 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Μ規格（210X297公釐） 502330 A7 B7 經濟部智慧財產局員工消費合作社印製 4 915twf.doc/008 五、發明説明ο ) 或者在實施本發明的過程中，發現本發明其他更多的特 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 .說明如下： 圖式之簡單說明： 第1A圖至第1D圖繪示習知一種晶片的處理方法的 流程剖面圖；以及 第2A圖至第2E圖繪示根據本發明，一種晶片的處 理方法的流程剖面圖。 圖式標記說明： 102:晶片 102a :硏磨後的晶片 l〇3a :晶片正面 103b :晶片背面 104 :膠布 106 :晶背硏磨 108 :殘膠 200 :晶片 201a :晶片正面 201b :晶片背面 204 :膠布 206:晶背硏磨 210 :保護膜 5 本紙張尺度適用中國國家標準（CNS) Μ規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)502330 A7 B7 4 915twf.doc / 008 V. Description of the invention q) The present invention relates to a semiconductor process, and in particular to a method for processing a wafer. (Please read the notes on the back before filling this page.) In the traditional back-end process of wafers in wafer fabs, after the wafer passes the wafer acceptance test, the wafer is honing and then shipped. . The purpose of crystal back honing is to facilitate subsequent wafer dicing and facilitate packaging. However, wafer honing is a very dirty process and is prone to contamination. Therefore, in order to prevent the front side of the wafer from being contaminated or damaged, a layer of adhesive tape will be affixed to the front side of the wafer before honing the wafer To achieve the purpose of protection. However, often after the wafer has been ground, when this layer of adhesive tape is to be removed, the adhesive on the adhesive tape often remains on the wafer, and it is a pity that it is returned by the customer. In addition, even if the product is not returned by the customer, these residues may cause poor pad bonding or packaging problems. Figs. 1A to 1D are cross-sectional views showing a flow of a wafer processing method. Please refer to FIG. 1A to provide a 'wafer 1 0 2'. This wafer 1 0 2 has a front surface 103a and a back surface 10; 3b. Among them, various semiconductor elements (not shown) are formed on the front surface 103a of the wafer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Please refer to Figure 1B. A layer of expanded fabric 104 will be pasted on the front surface 103a of the wafer. Please refer to FIG. 1C to perform crystal back honing 106. The honed wafer is labeled 102a. Please refer to Figure 1D. After the wafer 102a has been ground, the three paper sizes must be removed. The Chinese paper standard (CNS) A4 (21 × 297 mm) is applicable. 502330 A7 B7 4 915twf.doc / 008 V. Description of the invention When the (γ) layer of adhesive tape 104 (Fig. 1C), the adhesive 108 on the adhesive tape 104 remains on the wafer 102 from time to time, and it is a pity that the customer returns it. In addition, even if the product is not returned by the customer, these residues 108 may cause bad pad bonding or packaging problems. The present invention provides a method for processing a wafer. The wafer has two sides, and the reverse side of the wafer is subjected to a process that will pollute the front side of the wafer. First, a cling film is formed to cover the front side of the wafer. Next, stick a tape on the plastic wrap. After that, the above-mentioned pollution process is performed. Then, remove the tape, and the plastic wrap will be removed at this time. The so-called contamination process may be a chemical mechanical honing method for honing the reverse side of the wafer, or a descum ash step. The preferred plastic film is polyethylene (PE) or polyvinyl chloride (PVC). The formation method can be as follows: first spraying a liquid fresh-keeping film on the front surface of the wafer, and then leaving the wafer still, so that the liquid fresh-keeping film is solidified into a solid fresh-keeping film by contact with air. Among them, when spraying liquid cling film, the wafer can be rotated to increase the spraying uniformity. The rest time of the wafer is about 3 to 5 minutes. The procedure for processing wafers according to the present invention is simple, and the cling film provided by the present invention can be lifted off with the adhesive tape and taken away. In addition, the present invention can not only use the protective film to avoid the problem of adhesive residue, but also use the Descum Ash step to avoid problems such as poor bond bonding (ρ "Bonding). The characteristics of the present invention described above are not sufficient Represents all possible features of the present invention. Those skilled in the art can 'in the following examples, 4 (Please read the notes on the back before filling this page) Order the paper size printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Applicable to Chinese National Standard (CNS) M specifications (210X297 mm) 502330 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 915twf.doc / 008 V. Description of the invention ο) Or in the process of implementing the present invention, found this In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following describes specific embodiments in conjunction with the accompanying drawings for details. The description is as follows: Brief description: FIGS. 1A to 1D show cross-sectional views of a conventional processing method of a wafer; and FIGS. 2A to 2E show a crystal according to the present invention. Sectional view of the flow of the processing method. Symbol description: 102: wafer 102a: wafer after honing 103a: wafer front 103b: wafer back 104: adhesive tape 106: crystal back honing 108: residue 200: wafer 201a : Front side of wafer 201b: Backside of wafer 204: Adhesive tape 206: Honing of crystal back 210: Protective film 5 The paper size is applicable to Chinese National Standard (CNS) M specifications (210X297 mm) )
50233_α A7 B7 4915twf.doc/〇〇8 五、發明説明（t ) 實施例 第2A圖至第2E圖繪示根據本發明，一種晶片的處 理方法的流程剖面圖。 請參照第2A圖，提供一晶片200，此晶片200具有 正面201a和背面201b。其中，晶片正面201a上形成有 護層（材質可含有聚乙醯胺）與焊墊（材質可爲金屬）等各種 半導體元件。因爲這些都是熟知的半導體元件’於此省 略而未繪示於圖中。 請參照第2B圖，在晶片正面201a上形成一層保護 膜210。這層保護膜210的特性之一，在於其一開始是 液態的，因而可以均勻附著在晶片200的表面上，且其 接觸空氣後會固化，因而不會脫落。此保護膜210的材 質例如是聚乙烯(PE)、聚氯乙烯(PVC)、或其他具有上述 特性的材料。 此保護膜210的形成方法，可包括噴灑步驟和固化 步驟。噴灑步驟例如是噴上一層薄的液態保鮮膜(亦即噴 氣式保鮮膜）。噴灑時可旋轉晶片200，而由上方噴灑液 態保鮮膜，以增加其均勻性。固化步驟則例如是靜置晶 片200約3至5分鐘，此時液態保鮮膜會因接觸空氣而 固化(亦即硬化成固態）。 請參照第2C圖，接著，在保護膜210上貼上膠布204。 請參照第2D圖，進行晶背硏磨206，其硏磨方式例 如是化學機械硏磨。在進行晶背硏磨206之前，最好先 進行去垢灰化（Descum Ash)步驟，其可避免聚乙醯胺（護 6 本紙張尺度適用中國國家標準（CNS ) A4規格（ 210X297公釐) I---1--— -- (請先閲讀背面之注意事項再填寫本頁) 、tr 經濟部智慧財產局員工消費合作社印製 C 3 3 2 ο—丨. 5 A7 4915twf·doc/〇〇8 ^ 五、發明説明（匕） 層材料）殘留所造成焊墊接合(Pad Bonding)不良等問題。 請參照第2E圖，撕下膠布204。在撕下膠布204時， 膠布204和晶片200表面之間固化的保護膜210，會因 爲有強大的外力而也一起被撕掉’所以不會有殘膠直接 .留在晶片200上。 這層保護膜210最好不要是光阻，因爲形成光阻的 製程相當繁瑣。這種繁瑣製程包括烘烤(baking)等步驟， 易損傷焊墊。此外，在撕下膠布，而要拿下光阻時，又 需要使用到顯影液來掀掉光阻。而光阻的顯影液是一種 鹼性溶液，往往會引發腐蝕而損傷焊墊表面（特別是焊墊 材質爲金屬時）。 本發明可具有特點如下： 1. 本發明處理晶片的程序簡單。 2. 本發明在撕膠時，可防止殘膠遺留在晶片上。 3. 在硏磨晶片背面之後，本發明提出之保護膜隨同膠 布一起被掀掉帶走，可保護焊墊表面及其外觀。 4·本發明可利用保護膜避免殘膠問題，亦可利用去垢 灰化步驟避免焊墊接合(Pad Bonding)不良等問題。 這裡條列的特點，並不足以代表本發明所有可能具 有的特點。熟悉此技藝者，可在上述實施例內容中，或 者在實施本發明的過程中，發現本發明其他更多的特點。 雖然本發明已以較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍內，當可作各種之更動與潤飾。因此本發明 7 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐1 ' (請先閲讀背面之注意事項再填寫本頁) 、tr 經濟部智慧財產局員工消費合作社印製 502330 4915twf.doc/008 A7 B7 五、發明説明（6 )之保護範圍當視後附之申請專利範圍所界定者爲準 (請先聞讀背面之注意事項再填寫本頁) ,ιτ 經濟部智慧財產局員工消費合作社印製 準 標 家 國 國 中 用. 適 釐 2950233_α A7 B7 4915twf.doc / 〇〇8 V. Description of the Invention (t) Examples Figures 2A to 2E show cross-sectional views of a process of a wafer processing method according to the present invention. Referring to FIG. 2A, a wafer 200 is provided. The wafer 200 has a front surface 201a and a back surface 201b. Among them, various semiconductor elements such as a protective layer (material may include polyethylenamine) and a pad (material may be metal) are formed on the front surface 201a of the wafer. Because these are well-known semiconductor elements' are omitted here and not shown in the figure. Referring to FIG. 2B, a protective film 210 is formed on the front surface 201a of the wafer. One of the characteristics of this protective film 210 is that it is liquid at the beginning, so it can adhere to the surface of the wafer 200 uniformly, and it will solidify when exposed to air, so it will not fall off. The material of the protective film 210 is, for example, polyethylene (PE), polyvinyl chloride (PVC), or other materials having the above characteristics. The method for forming the protective film 210 may include a spraying step and a curing step. The spraying step is, for example, spraying a thin layer of liquid cling film (i.e., a spray-type cling film). The wafer 200 can be rotated during spraying, and a liquid cling film is sprayed from above to increase its uniformity. The curing step is, for example, leaving the wafer 200 to stand for about 3 to 5 minutes. At this time, the liquid cling film is solidified (that is, hardened to a solid state) by contact with air. Referring to FIG. 2C, the protective film 210 is then affixed with an adhesive tape 204. Please refer to Figure 2D for crystal back honing 206. The honing method is, for example, chemical mechanical honing. Before carrying out the crystal back honing 206, it is better to first perform a Descum Ash step, which can avoid polyethylamine (protecting 6 paper sizes applicable to China National Standard (CNS) A4 specifications (210X297 mm)). I --- 1 -----(Please read the notes on the back before filling out this page), tr Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy C 3 3 2 ο— 丨. 5 A7 4915twf · doc / 〇 〇8 ^ V. Description of the invention (Pad layer material) residue caused by poor pad bonding (Pad Bonding) and other problems. Refer to Figure 2E and remove the adhesive tape 204. When the adhesive tape 204 is torn off, the protective film 210 cured between the adhesive tape 204 and the surface of the wafer 200 will be torn off together due to a strong external force ', so there will be no residual glue left on the wafer 200 directly. The protective film 210 is preferably not a photoresist, because the process of forming the photoresist is quite complicated. This cumbersome process includes steps such as baking, which can easily damage the pads. In addition, when the tape is torn off and the photoresist is to be removed, a developing solution is required to remove the photoresist. The photoresist developer is an alkaline solution, which often causes corrosion and damages the surface of the pad (especially when the pad is made of metal). The present invention may have the following features: 1. The procedure for processing wafers according to the present invention is simple. 2. When the invention tears the glue, it can prevent the residue of glue remaining on the wafer. 3. After honing the backside of the wafer, the protective film proposed by the present invention is lifted off with the adhesive tape and taken away to protect the surface of the pad and its appearance. 4. In the present invention, a protective film can be used to avoid the problem of adhesive residue, and a descaling and ashing step can be used to avoid problems such as poor pad bonding. The features listed here are not enough to represent all the possible features of the invention. Those skilled in the art may find out more features of the present invention in the content of the above embodiments or in the process of implementing the present invention. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the paper size of the invention 7 is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm 1 '(please read the precautions on the back before filling out this page), tr printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives to print 502330 4915twf. doc / 008 A7 B7 V. The scope of protection of the invention description (6) shall be determined by the scope of the attached patent application (please read the notes on the back before filling this page), staff of Intellectual Property Bureau of the Ministry of Economic Affairs Consumption cooperatives print quasi-standards for domestic use. Appropriate 29