1360843 九、發明說明： 【發明所屬之技術領域】 本發明係有關-種半導體封褒技術 割方法。 &粳日日圓切 【先别技術】 傳統的晶片級封裝是將晶粒至晶圓上 裳。目前封裝製程中所使用的晶教㈣ °來再做封 是隨著晶圓切割時而分離。曰:，attache«in-(W職e)現象產生銲墊污染，影響產品的良率。為毛邊 【發明内容】 為了解決上述問題，本發明目的之—係、 =’係於晶圓研磨即前完成晶粒切 ;=r著膜仍維持完整，故可有效避免毛邊= 為了達到上述目的，本發明—眚# 包括下列步驟：提供-晶圓，其中晶圓具有割方法係 圓之正面;形成複數個切割凹槽於晶圓之義= 個曰曰粒；貼附一背部研磨膠帶覆蓋於保護 疋義出複數 ，出切割凹槽内部;設置—晶粒附著膜覆蓋晶圓之== 粗附著膜係由一黏著膜與一離型膜所組a /、中晶 圓之背面接觸；移除背部研磨勝帶σ 著膜係與晶 :r；= 5 【實施方式】 圖1A、圖1B、圖nD、圖m、圖1Fn圖ih、 圖II與圖U所示為根據本發明—實施例晶圓切割方法之流程示音 圖。於本實施例中，此晶圓切割方法包括下列二；思 請參照圖1A，提供一晶圓10。此晶圓1〇具有一正面盥一 面。接著，於晶圓10之正面形成一保護層2〇 /^ 層20之方法係利用塗佈，如旋轉塗佈，之 2 = 烤―!〇烤乾保護層2Ge此保護層2Q麵聚 -乳化珍（SA)或氮切（SiN3)等絕緣材質。 ㈤二後:ΐι圖1Γ所示，於晶圓10之正面形成複數個切割 凹槽12。蝴凹槽12«較深度並不會貫 凹槽定義出複數個晶粒14。切割凹槽12可利用=刻、」 械裁切或雷射切割的方式所形成。 ^ 接，上述說明，請參照圖lc，貼附一背部研磨膠帶川(BG tape)覆蓋於保護層20上’此背部研磨膠帶3〇係用來保 10之正面於研磨過程中不被污染或損壞。之後，如圖^曰所 示，對晶圓ίο之背面進行研磨至暴露出切割凹槽12 繼續，請參照圖iE，設置於-晶粒附著膜4〇收attach fiim， DAF)覆蓋晶圓1G之背面。其中’此晶粒附著膜4〇係由 42與一離型膜44 (releasing)所組合而成，且勘 ' 圓10之背面接觸。 货'/、朗 接著，如圖1F所示，移除背部研磨膠帶3〇，盆中 著膜42係«於糊凹槽12底部。之後，雜暴露於切割凹槽 底部之點著膜42並暴露出離型膜44。如圖ig盘同itr „. ^ 丹圃1Η所示，移 除黏著膜42之步驟係包括進行-UV曝光處理程序並去除受反應之 點著膜42,。於另-實施例中，移除黏著膜42之步驟可利^等 性敍刻方式移除。接著’如圖II所示，移除晶粒14上表面之保護 1360843 層20。最後，如圖1J所示，獲得晶粒14。其中，獲得晶粒14之 步驟更包括將晶粒14自離型膜44上移開。 綜合上述，本發明係於晶圓研磨即前完成晶粒切割步 驟，因此晶粒已分離但晶粒黏著膜仍維持完整，故可有效避 免毛邊現象產生銲墊污染。本發明可不傷害晶粒又達到晶粒 黏著膜分離之目的。 以上所述之實施例僅係為說明本發明之技術思想及特 點，其目的在使熟習此項技藝之人士能夠瞭解本發明之内容 並據以實施，當不能以之限定本發明之專利範圍，即大凡依 本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本 發明之專利範圍内。 1360843 【圖式簡單說明】1360843 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a semiconductor sealing technique cutting method. & Japanese Yen Cut [First Technology] The traditional wafer level package is to place the die on the wafer. The crystal teaching (4) used in the current packaging process is re-sealed as the wafer is cut.曰: The attache«in-(W job e) phenomenon produces solder pad contamination, which affects the yield of the product. In order to solve the above problems, in order to solve the above problems, the object of the present invention is that the film is cut before the wafer is polished, and the film is still intact, so that the burr can be effectively avoided. The present invention - 眚 # includes the following steps: providing - wafer, wherein the wafer has a cutting method on the front side of the circle; forming a plurality of cutting grooves on the wafer = 曰曰 particles; attached with a back abrasive tape covering In order to protect the 出 出 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Removing the back grinding belt σ film system and crystal: r;= 5 [Embodiment] FIG. 1A, FIG. 1B, FIG. 1D, FIG. 1D, FIG. 1Fn, ih, FIG. II and FIG. A schematic diagram of the flow of the wafer cutting method of the embodiment. In the present embodiment, the wafer dicing method comprises the following two; and referring to FIG. 1A, a wafer 10 is provided. This wafer has a front side. Next, a method of forming a protective layer 2 on the front side of the wafer 10 is by coating, such as spin coating, 2 = baking -! baking dry protective layer 2Ge, this protective layer 2Q surface poly-emulsified Insulating materials such as Jane (SA) or Nitrogen (SiN3). (5) After the second: as shown in FIG. 1A, a plurality of cutting grooves 12 are formed on the front surface of the wafer 10. The groove 12« is deeper and does not pass through the groove to define a plurality of grains 14. The cutting groove 12 can be formed by means of = cutting, mechanical cutting or laser cutting. ^ Connect, for the above description, please refer to Figure lc, attach a back grinding tape (BG tape) on the protective layer 20 'This back abrasive tape 3 用来 is used to protect the front of the 10 from contamination during the grinding process or damage. After that, as shown in FIG. 2, the back surface of the wafer ίο is polished to expose the dicing recess 12, please refer to FIG. iE, and the argon-attached film 4 is attached to the wafer 1G. The back. Here, the grain adhesion film 4 is formed by combining 42 and a release film 44, and the back surface of the circle 10 is contacted. The goods '/, lang Next, as shown in Fig. 1F, remove the back grinding tape 3 〇, the film 42 in the basin is « at the bottom of the paste groove 12. Thereafter, the film is exposed to the bottom of the cut groove and the release film 44 is exposed. As shown in the ig disk, with the itr „. ^ 丹圃1Η, the step of removing the adhesive film 42 includes performing a -UV exposure process and removing the film 42 from the reaction. In another embodiment, the removal is performed. The step of adhering the film 42 can be removed in an equivalent manner. Then, as shown in Fig. II, the protective 1360843 layer 20 of the upper surface of the die 14 is removed. Finally, as shown in Fig. 1J, the die 14 is obtained. Wherein, the step of obtaining the crystal grains 14 further comprises removing the crystal grains 14 from the release film 44. In summary, the present invention completes the grain cutting step before the wafer is ground, so that the crystal grains are separated but the crystal grains are adhered. The film is still intact, so that the burr phenomenon can be effectively prevented from causing contamination of the pad. The invention can not damage the crystal grain and achieve the purpose of separating the die adhesion film. The embodiments described above are only for explaining the technical idea and characteristics of the present invention. The purpose of the present invention is to enable those skilled in the art to understand the present invention and to practice the invention, and the scope of the invention is not limited thereto, that is, the equivalent changes or modifications made in accordance with the spirit of the present invention should still be Covered by the invention Within the range [1360843] Brief Description of the drawings
圖1A、圖1B、圖1C、圖1D、圖1E、圖1F、圖1G、圖1H、圖II 與圖1J所示為根據本發明一實施例之示意圖。 【要元件符號說明】 10 晶圓 12 切割凹槽 14 晶粒 20 保護層 30 背部研磨膠帶 40 晶粒附著膜 42 黏著膜 42, 受反應之黏著膜 44 離型膜1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, II, and 1J are schematic views showing an embodiment of the present invention. [Recognition of component symbols] 10 Wafer 12 Cutting groove 14 Grain 20 Protective layer 30 Back grinding tape 40 Grain adhesion film 42 Adhesive film 42, Reacted adhesive film 44 Release film