TW501184B - Scanning exposure method and scanning type exposure device - Google Patents

Scanning exposure method and scanning type exposure device Download PDF

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Publication number
TW501184B
TW501184B TW090118950A TW90118950A TW501184B TW 501184 B TW501184 B TW 501184B TW 090118950 A TW090118950 A TW 090118950A TW 90118950 A TW90118950 A TW 90118950A TW 501184 B TW501184 B TW 501184B
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Taiwan
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scanning
range
exposure
substrate
pattern
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TW090118950A
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Chinese (zh)
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Tadaaki Shinozaki
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Details Of Measuring And Other Instruments (AREA)

Abstract

To shorten a moving range required for a substrate process stage. A substrate is subjected to scanning exposure of the patterns of a mask by scanning the mask and the substrate synchronized in the scanning direction. The scanning direction of a stage to be placed with the substrate is set in accordance with the movable range where the stage moves and the scanning range where the stage moves in scanning exposure of the substrate.

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501184 五、發明說明（/ ) (發明之詳細說明） (發明所屬技術領域） (請先閱讀背面之注意事項再填寫本頁) 本發明係關於同步移動光罩與基板於既定方向，以將 形成於光罩之圖案曝光於基板之掃描曝光方法及掃描型曝 光裝置，特別是關於將複數光罩圖案曝光於基板時所適用 的掃描曝光方法及掃描型曝光裝置。 (習知技術） 近年來，個人電腦或電視等的顯示元件，大都採用可 薄型化之液晶顯示面板。此種液晶顯示面板，係俯視矩形 之感光基板，例如在玻璃基板上以微影Oithography)技 術，將透明薄膜電極圖案化成既定形狀而製成。而作爲該 微影之裝置，係使用將形成於光罩（標線片）上的圖案（ pattern )，透過投影光學系統而曝光於玻璃基板上的光阻 層之曝光裝置。 ;線- 上述之液晶顯示面板，爲了畫面之易視性而演變成大 面積化。而因應於此種需求之曝光裝置’如日本特許出願 特開平7-57968號所揭示，以正立像投影光罩之圖案於基 板上之複數投影光學系統的組合，同步移動光罩與玻璃基 板於既定方向，對投影光學系統在掃描方向進行掃描’據 此而在與同步移動方向相垂直之方向具有較大的曝光領域 ，亦即，將形成於光罩的LCD (liquid Crystal Display)等 的圖案，依次轉印於玻璃基板上之曝光領域之掃描型曝光 裝置被提出。 此時，即使加大投影領域但裝置不致大型化’且爲可 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 501184 A7 _____ Β7_______ 五、發明說明（工） (請先閱讀背面之注意事項再填寫本頁) 獲得優良成像特性之投影光學系，使用如此配置之複數@ 影光學系統，使緊鄰之投影領域可在掃描方向（Χ方向） 以既定量進行移位，且緊鄰之投影領域之端部在與掃描方 •向（Υ方向）垂直之方向上部份重複。這時’各投影光學 系統之視野光圈，係例如爲梯形形狀之開口 ’且設定成掃 描方向的視野光圈的開口幅寬總和是一直相等。因此’如 上述之掃描型曝光裝置，其緊鄰投影光學系統的連接部份 爲在玻璃基板上重複曝光，具有所謂投影光學系統之光學 像差或曝光照度爲平滑變化之優點。 掃描曝光裝置之圖案於玻璃基板上的1個曝光領域之 際，係在加速範圍加速移動靜止的光罩與玻璃基板至既定、 的掃描曝光速度爲止之後，在同步掃描範圍對投影光學系 統以大致一定的掃描速度（等速移動）進行掃描，而轉印 光罩之圖案於玻璃基板上。接著，在完成形成對象的曝光 領域之掃描後，減速光罩與基板玻璃基板並停止。 然而，如上述，在移動光罩與玻璃基板從加速移動至 等速移動之後，由於振動而無法穩定，故有產生同步偏離 的疑慮。於是，在實施掃描曝光之際，在加速範圍與等速 的同步掃描範圍之間，設置同步穩定範圍，藉由使光罩與 玻璃基板的掃描速度能穩定，而較難受到同步偏離的影響 〇 (本發明欲解決之問題） 但是，上述之習知掃描曝光方法及掃描曝光裝置，係 存在如下之問題。 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 501184 A7 ______ B7_ 五、發明說明（3 ) (請先閱讀背面之注意事項再填寫本頁) 上述之液晶顯示裝置係要求設計規則的更加微細化， 且要求處理能力之高速化以提昇生產性。且要求，在1張 光罩上形成複數的元件圖案、並投影於玻璃基板上的複數 曝光領域，據此而從1張玻璃基板獲得更多的元件，即進 行所謂多面取得的處理。 此外，近來，爲了應對元件圖案的大面積化或多數取 得’在掃描曝光後，重複光罩及玻璃基板的步進移動之步 進掃描型（step and scan)的曝光裝置被採用。此種掃描型 曝光裝置，例如第10圖所示，在玻璃基板P將光罩上的曝 光圖案A作成A1〜A4以進行4面取得時，對圖案A1僅在 X方向步進移動並掃描曝光圖案A2，且僅步進移動於Y方 向而掃描曝光圖案A3，並步進移動於X方向及Y方向而 掃描曝光圖案A4。又，第10圖中之PM符號，係使用於 將曝光形成於玻璃基板P的各圖案A1〜A4和光罩作對位之 際時之對準標記（alignment mark)。 一般之掃描型曝光裝置中，圖案A1〜A4的曝光順序 及各圖案的掃描方向，係考量對準標記所形成的位置或基 板交接的位置時，對處理能力上有利因素而決定，但對準 標記的位置因根據製程而並非固定，即使是相同之4面取 得，其曝光順序或掃描方向亦有不同之情形。因此，在固 定玻璃基板P而移動基板座台的狀態中’對各曝光圖案的 掃描方向，均設定爲可以是+x方向及_γ方向的任何方向 〇 亦即，即使掃描曝光某曝光圖案的掃描曝光範圍較短 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 501184 A7 ----- B7 ___ 五、發明說明（^ ) ’但基板座台亦須要估算兩方向之掃描曝光之可能的移動 範圍。具體而言’在上述的掃描範圍中，在圖案Al、A3 的-X側及圖案A2、A4的+X側的兩方，因必須設定同步 穩定範圍’故同步穩定範圍的掃描部份、基板座台的移動 衝程（stroke)即變大。基板座台的大小尺寸，係直接結合 於曝光裝置整體的尺寸，但基板座台的移動衝程的變大， 則支持基板座的定盤即大型化，而導致曝光裝置的大型化 。一般上’曝光裝置的無塵室（clearl room)的建設極費成 本’故被要求能縮小裝置的設置面積，但如此上述之基板 座台的移動衝程的變大，就呈現了無法因應此要求的問題 〇 本發明係考量上述之問題而創作，其目的爲提供一種 縮短基板所需移動的範圍、並有助於提昇量測精度或基板. 座台之位置控制精度之掃描曝光方法及掃描型曝光裝置。 (用以解決課題之手段）. 爲達成上述目的之本發明，係採用第1圖至第7圖所 示實施形態之構成。 本發明之掃描曝光方法，係藉由將光罩（M)與基板 (P)作成同步而在掃描方向進行掃描，以掃描曝光光覃（ M)的圖案於基板（P)之掃描曝光方法，其特徵具備·依 據載置基板（P)的座台（5)所能移動之可移動範圍、及 掃描曝光基板（P)之際之座台（5)所移動之掃描範圍’ 而設定座台（5)之掃描方向。 又，本發明之掃描型曝光裝置，係藉由將光覃（M) 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) - 訂·· 線 501184 A7 _ —-— —_B7 _ 五、發明說明（y ) 與基板（P)作成的同步而在掃描方向進行掃描，以掃描曝 光光罩（M)的圖案於基板（P)的曝光範圍之掃型曝光裝 置（D ’其特徵具備：載置基板（P)並移動於可移動範 圍之座台（5)、即在掃描曝光基板（P)之曝光範圍之際 ’以既定之掃描範圍驅動座台（5)之控制機構（17)，控 制機構（17)係依據前述可移動範圍與既定掃描光範圍， 而設定座台（5)之掃描方向。 因此，本發明之掃描曝光方法及掃描型曝光裝置，例 如在掃描方向掃描曝光複數圖案於基板（P)時，當掃描範 圍是較座台（5)之可移動範圍較小時，係自任意側均能對 基板（P)設定掃描方向，當掃描範圍是較座台（5)之動 可能範圍較大時，係以鄰接的圖案側作爲掃描開始方向， 據此，而能在鄰接之圖案上作成直至同步掃描的範圍爲止 之加速範圍及同步穩定範圍。是故，於此情形下，即能削 除掃描範圍之中的同步穩定範圍，並能縮短基板座台（5) 所須之驅動範圍。 (發明之實施形態） 以下，參閱第1圖至第7圖，說明本發明之掃描曝光 方法及掃描型曝光裝置之第1實施形態。此處，基板爲採 用製造液晶顯示面板用之方形的玻璃基板，並以將形成於 光罩的液晶顯示元件的電路圖案，轉印至玻璃基板上的情 形爲例而說明之。另，此處係以投影光學系統爲由5個投 影光學系統模組所構成的情形爲例而說明之。於這些圖中 ，和習知例所示之第10圖相同之構成因素’係賦予相同符 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) Μ —線 501184 A7 ___ B7_ 五、發明說明（έ ) 號並省略其說明。 第1圖爲表示本發明之掃描型曝光裝置1之槪略構成 之立體圖。掃描型曝光裝置1，係藉由沿掃描方向同步掃 描光罩（標線片）Μ與玻璃基板（基板）p，而將光罩M 的圖案曝光形成於玻璃基板P，其主體係具備照明光學系 統2、複數（此處爲5個）投影光學系統模組3a〜3e所構 成的投影光學系統3、固定光罩Μ的光罩座台4 (參閱第 2圖）、固定玻璃基板（基板）Ρ的基板座台（座台）5、 對位檢測系統l〇a與10b。又，於第1圖中，以投影光學 系統3的光軸方向爲Z方向，以垂直於Z方向之方向之光 罩Μ及玻璃基板P的同步移動方向（掃描方向爲X方向， 以正交於Ζ方向及X方向之方向（非掃描方向）爲γ方向 。另，基板座台5的同步移動方向之位置，係用雷射干涉 計(照射雷射光束於移動鏡36而量測位置)來測量。 照明光學系統2，係照射來自第2圖所示之超高壓水 銀燈等光源所射出之光束（曝光用光）於光罩Μ，由分別 對應於中繼光學系統、光導件9及投影光學系統模組3a〜 3e而設置的照明系統模組（但於第2圖中，爲了方便僅表 示出對應於投影光學系統模組3a)所構成。又，第2圖之 投影光學系統模組3a〜3e係簡略化之圖示。 自位於橢圓鏡6a的第1焦點位置的光源所射出的光束 ，係以橢圓鏡6a聚光於第2焦點位置。中繼光學系統係將 該第2焦點位置的光源像，成像於光導件9的入射面、而 在該光程中，係配置有分光鏡（dichroic mirror) 7、波長 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) Μ -"線_ 501184 A7 _______Β7____ 五、發明說明（) 選擇濾波器（filter) 8、曝光快門12等。該分光鏡7係反 射曝光所需波長的光束，並使其他波長的光束透過。經分 光鏡7所反射的光束，係入射至波長選擇濾波器8，而形 成了適於投影光學系統3進行曝光之波長（一般爲含有g 、h、i線內之至少一個之帶域）。 曝光快門12係對光束之光程配置成進退自如之狀態， 在非曝光時係藉由插入於光程中而遮斷照射至光罩Μ的光 束，反之，在曝光時係自光程中退開，而使光束得以照射 入光罩Μ上。又，曝光快門12係對光程設置著使該曝光 快門12能進退移動的快門驅動部16，快門驅動部16係藉 由控制裝置（控制機構）17而控制該驅動。光導件9將射 入的光束分爲5條，並透過反射鏡11而射入至各照明系統 模組。 各照明系統模組係由輸入光學系統和聚光式（ condenser)光學系統槪略構成之。又，本實施形態中，該 照明系統模組和相同構成之照明系統模組，係配置成在X 方向和Y方向上具有固定間隔。而且，來自各照明系統的 光束係構成能照射光罩Μ上的不同的照明領域之狀態。 輸入光學系統係由來自光導器9的射出面的光束，形 成均一照度的第2光源像。在輸入光學系統中，係設置著 光量調整機構。該光量調整機構係具有例如以Cr等在玻璃 板上圖案設計成簾子狀，且透過率是沿著Y方向在某範圍 逐漸變化成線形的濾波器21，而藉由濾波器驅動部22來 移動濾波器21於垂直於光軸方向，而形成可獲得任意之透 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) I! •線 501184 A7 __B7 _ 五、發明說明（没） 過率之構成。該濾波器驅動部22係依據控制裝置17而控 制該驅動。 透過光量調整機構的光束，係透過中繼透鏡13而射入 至平面透鏡14。平面透鏡14係將照度予以均一化，且在 射出面側形成二次光源。透過平面透鏡14的光束，係藉由 聚光光學系統的聚光透鏡15而以均一的照度照射光罩Μ 的照明領域。另，在聚光光學系統中係配設有光量監視機 構。 該光量監視機構，係配置於光程中的半透鏡19爲反射 一部份光束並射入至檢波器20，而檢測該光量以監視光程 中的照度。精檢測的照度信號係輸出至控制裝置17。控制 裝置17係控制光量監視機構及光量調整機構，據此而可調 整光束之光量於既定値。 透過光罩Μ的光束係分別射入至投影光學系統模組 3a〜3e。又，照明領域的光罩Μ圖案，係具有既定的成像 特性，以等倍正立像曝光於塗佈有光阻的玻璃基板Ρ上。 各投影光學系統模組3a〜3e，主要係由2組的反射折射型 光學系統、移位光罩的Μ的圖案像於X方向或Y方向的 像移位機構、改變光罩Μ的圖案像的倍率之像倍率機構、 像旋轉機構、及視野光圏（均未圖示）所構成。 透過光罩Μ的光束係首先射入至第1組的反射折射型 光學系統。該反射折射型光學系，係在視野光圏之位置形 成光罩像的中間像，並藉由該視野光圏而設定玻璃基板Ρ 上的投影領域。透過視野光圈的光束係射入第2組的反射 10 t紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ~ (請先閱讀背面之注意事項再填寫本頁) 訂： 線- 501184 A7 __B7__ 五、發明說明（7 ) 折射型光學系統，並射入視野光圏所規定的玻璃基板p上 的投影領域。 第3圖爲表示玻璃基板p上的投影光學系統模組3a〜 3e的投影領域34a〜34e之俯視圖。如該圖所示’各投影 領域34a〜34e係呈梯形形狀°又，投影領域34a、34c、 34e和投影領域34b、34d係互隔間隔地在X方向成對向之 配置。而且，投影領域34a〜34e係設定成其相鄰的投影領 域的端部們，爲如二點鏈線所示’在γ方向作重複的並列 配置，且X方向的投影領域的幅寬總合是大致相等。亦即 ，在掃描曝光於X方向時’是形成可獲得2個投影領域的 累計曝光量之最佳曝光量之狀態。 如此，藉由設置使各投影光學系統模組3a〜3e而來的 投影光學領域34a〜34e重複的連接部，而能平滑地改變在 連接部中的Y方向的光學像差變化或照度。又，本實施形 態的投影領域34a〜34e的形狀係梯形，但亦可爲六角形或 菱形或平行四邊形等。 光罩座台4係固定光罩Μ，並可移動於X軸方向及Y 軸方向、更甚及Ζ方軸周圍的旋轉方向（以下稱0軸）， 在X軸方向係具有進行掃描曝光的長衝程，並具有對掃描 曝光中的基板座台5的姿勢變化，進行位置追隨用的在γ 軸方向及0軸方向的微小量衝程。如第2圖所示，在光罩 座台4係具備驅動該光罩座台4於X方向及γ方向的光罩 座台驅動部（座台驅動裝置）37。該光罩座台驅動部37係 依據控制裝置17而控制之。 11 本^^尺度適財關家鮮（CNS)A4規格（210 X 297公餐) "" (請先閱讀背面之注意事項再填寫本頁)501184 V. Description of the invention (/) (Detailed description of the invention) (Technical field to which the invention belongs) (Please read the precautions on the back before filling out this page) The invention relates to the synchronous movement of the photomask and the substrate in a predetermined direction to form the A scanning exposure method and a scanning exposure apparatus for exposing a pattern on a photomask to a substrate, and more particularly, a scanning exposure method and a scanning exposure apparatus that are applicable when a plurality of photomask patterns are exposed on a substrate. (Conventional Technology) In recent years, most display devices such as personal computers and televisions have been made thinner liquid crystal display panels. Such a liquid crystal display panel is made of a rectangular photosensitive substrate in a plan view, for example, a transparent thin-film electrode is patterned into a predetermined shape by using a lithography Oithography technique on a glass substrate. The lithography device is an exposure device that uses a pattern formed on a photomask (reticle) and exposes a photoresist layer on a glass substrate through a projection optical system. ; Line-The above-mentioned liquid crystal display panel has evolved into a large area for ease of view of the screen. In response to such a demand, an exposure device, as disclosed in Japanese Patent Laying-Open No. 7-57968, uses a combination of a plurality of projection optical systems in which a pattern of a projection image is projected on a substrate, and the mask and the glass substrate are simultaneously moved Scanning the projection optical system in the scanning direction in the predetermined direction 'accordingly has a large exposure area in a direction perpendicular to the synchronous movement direction, that is, a pattern such as an LCD (liquid crystal display) to be formed in a photomask A scanning-type exposure device that sequentially transfers the exposure areas on a glass substrate has been proposed. At this time, even if the projection area is enlarged, the device will not be enlarged. And it is acceptable. 3 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) 501184 A7 _____ Β7 _______ 5. Description of the invention (work) (Please Please read the notes on the back before filling in this page) To obtain a projection optical system with excellent imaging characteristics, use the multiple @ 影 光 系统 configured so that the immediate projection area can be shifted in the scanning direction (X direction) by a predetermined amount, And the end of the projection area immediately adjacent is partially repeated in a direction perpendicular to the scanning direction (direction). At this time, 'the aperture of each field of view of the projection optical system is, for example, a trapezoidal opening', and the sum of the aperture widths of the apertures of the field of view set in the scanning direction is always the same. Therefore, the scanning exposure device as described above, in which the connection portion adjacent to the projection optical system is repeatedly exposed on the glass substrate, has the advantage that the optical aberration or exposure illumination of the projection optical system changes smoothly. When the pattern of the scanning exposure device is placed on one exposure area on the glass substrate, after moving the stationary photomask and glass substrate to the predetermined scanning exposure speed in the acceleration range, the projection optical system is roughly scanned in the synchronous scanning range. Scanning is performed at a certain scanning speed (moving at a constant speed), and the pattern of the photomask is transferred on a glass substrate. Then, after the scanning of the exposure area of the formed object is completed, the mask and the substrate glass substrate are decelerated and stopped. However, as described above, after the moving reticle and the glass substrate move from accelerated to constant velocity, they cannot be stabilized due to vibration, so there is a concern that a synchronization deviation occurs. Therefore, when scanning exposure is performed, a synchronization stable range is set between the acceleration range and the constant-speed synchronous scanning range. By making the scanning speed of the photomask and the glass substrate stable, it is difficult to be affected by the synchronization deviation. (Problems to be Solved by the Invention) However, the conventional scanning exposure method and scanning exposure apparatus described above have the following problems. 4 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 501184 A7 ______ B7_ V. Description of the invention (3) (Please read the precautions on the back before filling this page) The above-mentioned liquid crystal display device is The design rules are required to be more detailed, and the processing speed is required to increase productivity. In addition, it is required to form a plurality of element patterns on a single photomask and project them onto a plurality of exposure areas on a glass substrate. In order to obtain more elements from a single glass substrate, a so-called multi-facet acquisition process is required. In addition, recently, in order to cope with an increase in the area of an element pattern or to obtain a large number of steps, a step-and-scan type exposure apparatus that repeats the stepwise movement of a photomask and a glass substrate after scanning exposure is used. In such a scanning exposure device, for example, as shown in FIG. 10, when the exposure pattern A on the photomask is made into A1 to A4 for four-side acquisition on the glass substrate P, the pattern A1 is moved stepwise in the X direction and scanned for exposure. The pattern A2 scans the exposure pattern A3 only in steps of the Y direction, and scans the exposure pattern A4 in steps of the X direction and the Y direction. The PM symbol in FIG. 10 is an alignment mark used when the patterns A1 to A4 exposed on the glass substrate P and the photomask are aligned. In a general scanning exposure apparatus, the exposure order of the patterns A1 to A4 and the scanning direction of each pattern are determined by considering the position formed by the alignment mark or the position where the substrate is transferred. The position of the mark is not fixed according to the manufacturing process. Even if it is obtained on the same four sides, the exposure order or scanning direction may be different. Therefore, in the state where the glass substrate P is fixed and the substrate stage is moved, the scanning direction of each exposure pattern is set to any direction that can be + x direction and _γ direction. That is, even if the exposure pattern of a certain exposure pattern is scanned and exposed, Scanning exposure range is shorter 5 This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 x 297 mm) 501184 A7 ----- B7 ___ V. Description of the invention (^) 'However, it is necessary to estimate two The possible range of movement of the scan exposure in the direction. Specifically, 'in the above-mentioned scanning range, both the -X side of the pattern Al and A3 and the + X side of the pattern A2 and A4 need to set the synchronization stable range', so the scanning part and the substrate of the synchronization stable range The stroke of the seat becomes larger. The size of the substrate base is directly combined with the overall size of the exposure device, but the larger the movement stroke of the substrate base, the larger the supporting plate of the substrate base, and the larger the exposure device. In general, 'the construction of a clearl room of an exposure device is extremely costly', it is required to reduce the installation area of the device. However, as the moving stroke of the above-mentioned substrate base becomes larger, it is impossible to meet this requirement. 〇 The present invention was created in consideration of the above problems, and its purpose is to provide a scanning exposure method and a scanning type for shortening the range of movement of the substrate and helping to improve the measurement accuracy or the position of the substrate. Exposure device. (Means for solving the problems). In order to achieve the above-mentioned object, the present invention adopts a configuration of the embodiments shown in Figs. 1 to 7. The scanning exposure method of the present invention is a scanning exposure method that scans the pattern of the exposure light (M) on the substrate (P) by synchronizing the photomask (M) and the substrate (P) and scanning in the scanning direction. It is characterized in that the setting of the table is based on the movable range of the table (P) on which the substrate (P) can be moved and the scanning range of the table (5) when the exposed substrate (P) is scanned. (5) Scanning direction. In addition, the scanning exposure device of the present invention is adapted to the Chinese paper standard (CNS) A4 (210 X 297 mm) by applying the light paper (M) 6 paper size (please read the precautions on the back before filling in this Page)-Order · Line 501184 A7 _ —-— —_B7 _ V. Description of the invention (y) Scanning in the scanning direction in synchronization with the substrate (P) to scan the pattern of the exposure mask (M) on the substrate Scanning exposure device (D ') with exposure range (P), which is characterized in that the substrate (P) is placed and moved on a movable range table (5), that is, when the exposure range of the exposure substrate (P) is scanned 'The control mechanism (17) that drives the base (5) with a predetermined scanning range, and the control mechanism (17) sets the scanning direction of the base (5) based on the aforementioned movable range and a predetermined scanning light range. Therefore, this The scanning exposure method and scanning exposure device of the invention, for example, when scanning a plurality of patterns on the substrate (P) in the scanning direction, when the scanning range is smaller than the movable range of the table (5), it can be from any side. Set the scanning direction for the substrate (P). When the movement range is larger than that of the table (5), the adjacent pattern side is used as the scanning start direction. Based on this, the acceleration range and synchronization stable range up to the range of synchronous scanning can be created on the adjacent pattern. Therefore, in this case, the synchronous stable range in the scanning range can be removed, and the driving range required for the substrate base (5) can be shortened. (Embodiment of the invention) Hereinafter, refer to FIG. 1 to FIG. FIG. 7 illustrates the first embodiment of the scanning exposure method and the scanning exposure device of the present invention. Here, the substrate is a square glass substrate for manufacturing a liquid crystal display panel, and a liquid crystal display element to be formed on a photomask is used. The circuit pattern is described as an example when it is transferred to a glass substrate. Here, the case where the projection optical system is composed of five projection optical system modules is described as an example. In these figures, The same components as in the conventional example shown in Figure 10 'are given the same sign. 7 This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (please read the note on the back first) (Please fill in this page for the matters needing attention) Μ —line 501184 A7 ___ B7_ V. The description number of the invention is omitted and its description is omitted. Figure 1 is a perspective view showing the schematic structure of the scanning exposure device 1 of the present invention. Scanning exposure The device 1 is formed by exposing the pattern of the photomask M on the glass substrate P by scanning the photomask (reticle) M and the glass substrate (substrate) p simultaneously in the scanning direction. The main system includes an illumination optical system 2 Projection optical system 3 composed of plural (here, five) projection optical system modules 3a to 3e, photomask base 4 (see FIG. 2) for fixing photomask M, and substrate for fixing glass substrate (substrate) P Seat (seat) 5, registration detection system 10a and 10b. In FIG. 1, the direction of the optical axis of the projection optical system 3 is the Z direction, and the synchronous movement direction of the mask M and the glass substrate P in a direction perpendicular to the Z direction (the scanning direction is the X direction and orthogonal to each other). The directions (non-scanning directions) in the Z direction and the X direction are the γ direction. In addition, the position of the synchronous movement direction of the substrate base 5 is a laser interferometer (the laser beam is irradiated on the moving mirror 36 to measure the position). Illumination optical system 2 is used to illuminate the light beam (exposure light) emitted from a light source such as the ultra-high pressure mercury lamp shown in Fig. 2 on a photomask M, corresponding to the relay optical system, light guide 9 and projection respectively. The lighting system module provided with the optical system modules 3a to 3e (but in FIG. 2, only the projection optical system module 3a is shown for convenience). Also, the projection optical system module of FIG. 2 3a to 3e are simplified diagrams. The light beam emitted from the light source located at the first focal position of the elliptical mirror 6a is focused by the elliptical mirror 6a at the second focal position. The relay optical system focuses the second focal point. Position light source image, imaged on light guide 9 Incident surface, and in this optical path, a dichroic mirror is equipped 7. Wavelength 8 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back first (Fill in this page again) Μ-" Line _ 501184 A7 _______ Β7 ____ V. Description of the invention () Selection filter (filter 8), exposure shutter 12, etc. The beam splitter 7 reflects the light beam with the wavelength required for exposure and makes other wavelengths The light beam reflected by the beam splitter 7 is incident on the wavelength selection filter 8 to form a wavelength suitable for the exposure of the projection optical system 3 (generally a wavelength containing at least one of the g, h, and i lines). (Band zone). The exposure shutter 12 is configured to freely advance and retreat the optical path of the light beam. When it is not exposed, it is inserted into the optical path to block the light beam irradiated to the mask M. Otherwise, it is The light path is retracted so that the light beam can be irradiated onto the mask M. The exposure shutter 12 is provided with a shutter driving unit 16 for the optical path to move the exposure shutter 12 forward and backward. The shutter driving unit 16 is controlled by a control device. (control Structure) 17 to control the drive. The light guide 9 divides the incident light beam into five and passes through the reflector 11 to enter each lighting system module. Each lighting system module is composed of an input optical system and a condensing system. (Condenser) The optical system is basically configured. In this embodiment, the lighting system module and the lighting system module having the same configuration are arranged to have a fixed interval in the X direction and the Y direction. In addition, from each lighting The light beam of the system constitutes a state that can illuminate different illumination areas on the photomask M. The input optical system forms a second light source image with uniform illumination from the light beam from the exit surface of the light guide 9. In the input optical system, the system A light amount adjustment mechanism is provided. This light amount adjustment mechanism has a filter 21 that is designed in a curtain shape on a glass plate with Cr or the like, for example, and the transmittance is gradually changed into a linear shape in a certain range along the Y direction, and is moved by the filter driving unit 22 The filter 21 is formed in a direction perpendicular to the optical axis, and can be formed to achieve arbitrary transmission. 9 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) I! • Line 501184 A7 __B7 _ 5. Explanation of the invention (not) The constitution of the overrate. The filter driving section 22 controls the driving in accordance with the control device 17. The light beam transmitted through the light amount adjusting mechanism passes through the relay lens 13 and enters the plane lens 14. The plane lens 14 is a light source with a uniform illuminance, and a secondary light source is formed on the emission surface side. The light beam transmitted through the plane lens 14 illuminates the illumination area of the photomask M with a uniform illuminance through the condenser lens 15 of the condenser optical system. In addition, a light-concentration optical system is provided with a light amount monitoring mechanism. The light amount monitoring mechanism is a half lens 19 arranged in the optical path to reflect a part of the light beam and enter the detector 20, and detects the light amount to monitor the illuminance in the optical path. The precisely detected illuminance signal is output to the control device 17. The control device 17 controls the light amount monitoring mechanism and the light amount adjustment mechanism, and accordingly the light amount of the beam can be adjusted to a predetermined value. The light beams transmitted through the mask M are incident on the projection optical system modules 3a to 3e, respectively. In addition, the photomask M pattern in the lighting field has predetermined imaging characteristics, and is exposed on a glass substrate P coated with a photoresist as an orthorectified image. Each of the projection optical system modules 3a to 3e is mainly composed of two sets of reflective refractive optical systems, a pattern image of shifting the M of the mask, an image shifting mechanism of the X direction or a Y direction, and a pattern image of changing the mask M. It is composed of an image magnification mechanism, an image rotation mechanism, and a field of view (not shown). The light beam that has passed through the mask M first enters the first group of reflection-refractive optical systems. This reflection-refraction optical system forms an intermediate image of a mask image at the position of the field of view, and sets the projection area on the glass substrate P based on the field of view. The light beam passing through the aperture of the field of view is reflected into the second group of 10 t paper. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ~ (Please read the precautions on the back before filling this page). Order: Line -501184 A7 __B7__ V. Description of the invention (7) A refraction type optical system that projects into the projection area on the glass substrate p specified by the field of view. FIG. 3 is a plan view showing projection areas 34a to 34e of the projection optical system modules 3a to 3e on the glass substrate p. As shown in the figure, each of the projection areas 34a to 34e has a trapezoidal shape, and the projection areas 34a, 34c, and 34e and the projection areas 34b and 34d are arranged opposite to each other in the X direction at intervals. Moreover, the projection areas 34a to 34e are set so that the ends of the adjacent projection areas are arranged in parallel in the γ direction as shown by the two-point chain line, and the total width of the projection areas in the X direction is summed. Are roughly equal. That is, when the scanning exposure is in the X direction, the state is such that the optimum exposure amount is obtained so that the cumulative exposure amount of the two projection areas can be obtained. In this way, by providing the connection portions in which the projection optical fields 34a to 34e from each of the projection optical system modules 3a to 3e are repeated, it is possible to smoothly change the optical aberration change or illuminance in the Y direction in the connection portions. The shape of the projection areas 34a to 34e in this embodiment is trapezoidal, but may be hexagonal, rhombic, or parallelogram. The photomask base 4 is a fixed photomask M, and can be moved in the X-axis direction, the Y-axis direction, and even the rotation direction around the Z-axis (hereinafter referred to as the 0-axis). It has a long stroke and has a small amount of strokes in the γ-axis direction and the 0-axis direction for positional follow-up of the substrate stage 5 during scanning exposure, for position following. As shown in FIG. 2, the mask base 4 is provided with a mask base driving unit (a base driving device) 37 that drives the mask base 4 in the X and γ directions. The mask stage driving section 37 is controlled by the control device 17. 11 This ^^ Size Appropriate for Finance (CNS) A4 (210 X 297 Meals) " " (Please read the precautions on the back before filling this page)

501184 B7 五、發明說明（（。） (請先閱讀背面之注意事項再填寫本頁) =外光罩座台4的{^置係藉由未圖示之雷射干涉計 而HiJ其檢測結果則輸出至控制裝置17。控制裝置17 係依據雷射干渉計的輸出，而監控光罩座台*的位置，並 控制光罩座台驅動部37，據此，即能高精度地移動光罩座 台4(或光罩M)於既定之位置。 基板座台5係固定玻璃基板p，爲了由玻璃基板p邊 步進移動微小的光罩M的曝光圖案於χ方向及γ方向並邊 重複地依序掃描曝光，而在X方向及Υ方向具有長衝程。 此外，在基板座台5 ,係具備驅動該基板座台5於χ方向 及Υ方向的基板座台驅動部4〇。該基板座台驅動部4〇係 依據控制1¾置17而控制之。基板座台5的位置係依據未圖 示之雷射干涉計而可檢測，其檢測結果輸出至控制裝置17 〇 •線· 控制裝置17係依據雷射干涉計的輸出，而監控基板座 台5的位置，並控制基板座台驅動部4〇，據此而能提高精 度地移動基板座台5 (或玻璃基板p)於既定位置。亦即， 控制裝置17係邊監控光罩座台4及基板座台5的位置，並 控制兩個驅動部37、40，據此，而能對投影光學系統模組 3a〜3e’以任意之掃描速度（同步移動速度），同步移動 光罩Μ與玻璃基板P於χ方向。 進而，在基板座台5上，設置有用以修正玻璃基板ρ 的Ζ軸方向之位置之用的水平測量座台、及可旋轉於$軸 方向的0座台（均未圖示），並依據用以量測光罩Μ的圖 案面和玻璃基板Ρ的曝光面的Ζ方向的相對位置之量測機 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 501184 A7 _____B7__ _ 五、發明說明（丨丨） 構（未圖示）之量測結果，以進行位置控制，而使光罩Μ 的圖案和玻璃基板Ρ的曝光面能形成既定之間隔。 此外，在基板座台5上，係以和玻璃基板ρ的曝光面 大致相等的高度，配置著監視照度的檢測器41。檢測器41 係檢測玻璃基板Ρ上的光束之照度，並輸出經檢測的照度 信號至控制裝置17。繼而，在掃描曝光前，檢測各投影領 域34a〜34e中的照度，並藉由控制裝置π來驅動控制各 照明系統模組的光量調整機構，以使各領域的照度能形成 均一狀態。 在光罩Μ的上方，係配置有用以檢測形成於光罩Μ 的光罩標記（mask mark未圖示）及形成於玻璃基板Ρ的 對準標記（參閱第10圖）之對位檢測系統10a、l〇b。對 位檢測系統10a、10b係照射檢測光於光罩Μ的光罩標記 ，並承受該光罩標記的反射光及透過光罩標記所得的玻璃 基板Ρ上的對準標記的反射光，據此而形成用以量測光罩 Μ與玻璃基板Ρ之位置偏離量的一種構成。又，對位檢測 系統10a、10b的量測結果係輸出至控制裝置17。此外， 對位檢測系統l〇a、10b係具有移動於X方向的驅動機構（ 未圖示），在掃描曝光時係可自照明領域內退開的一種構 成。 以上述構成之掃描型曝光裝置1，使用第4圖所示之 流程圖。說明在玻璃基板上進行掃描曝光形成於光罩Μ的 圖案之順序。又，以下如第10圖所示，爲了能自玻璃基板 Ρ (亦即基板座台5的載置面）的中心移動並以複數次之同 13 (請先閱讀背面之注意事項再填寫本頁)501184 B7 V. Description of the invention ((.) (Please read the precautions on the back before filling in this page) = {^ position of the outer mask base 4 is the result of HiJ detection by a laser interferometer (not shown) The output is sent to the control device 17. The control device 17 monitors the position of the photomask base * and controls the photomask base driving unit 37 based on the output of the laser interferometer, so that the photomask can be moved with high accuracy. The stage 4 (or the mask M) is at a predetermined position. The substrate stage 5 fixes the glass substrate p, and the exposure pattern of the tiny mask M is moved in the χ direction and the γ direction in order to move the glass substrate p in steps. Scanning exposure sequentially in order to have a long stroke in the X direction and the Υ direction. In addition, the substrate stage 5 is provided with a substrate stage driving section 40 for driving the substrate stage 5 in the χ direction and the Υ direction. The substrate The seat drive section 40 is controlled by the control 12 and the position 17. The position of the substrate seat 5 can be detected by a laser interferometer (not shown), and the detection result is output to the control device 17. Series 17 monitors the position of substrate base 5 based on the output of the laser interferometer And control the substrate stage driving unit 40, thereby moving the substrate stage 5 (or the glass substrate p) to a predetermined position with increased accuracy. That is, the control device 17 monitors the photomask stage 4 and the substrate seat. The position of the stage 5 controls the two driving units 37 and 40. Based on this, the projection optical system modules 3a to 3e 'can move the photomask M and the glass substrate P synchronously at an arbitrary scanning speed (synchronous moving speed). In the χ direction. Further, on the substrate stage 5, a horizontal measuring stage for correcting the position in the Z-axis direction of the glass substrate ρ, and a zero-stage stage (both not shown) that can be rotated in the $ -axis direction are provided. ), And according to the measuring machine used to measure the relative position of the pattern surface of the photomask M and the exposure surface of the glass substrate P in the Z direction. 12 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 x 297 mm). ) 501184 A7 _____B7__ _ 5. Inventory (丨 丨) Measurement results of the structure (not shown) for position control, so that the pattern of the photomask M and the exposure surface of the glass substrate P can form a predetermined interval. , On the base plate 5 The exposure surface of the substrate ρ is approximately equal in height, and a detector 41 for monitoring the illuminance is arranged. The detector 41 detects the illuminance of the light beam on the glass substrate P and outputs the detected illuminance signal to the control device 17. Then, the scanning exposure is performed Previously, the illuminance in each projection area 34a to 34e was detected, and the light quantity adjustment mechanism of each lighting system module was driven and controlled by the control device π, so that the illuminance in each area could be uniform. Above the mask M, An alignment detection system 10a, 10b for detecting a mask mark (not shown) formed on the photomask M and an alignment mark (refer to FIG. 10) formed on the glass substrate P is provided. The detection systems 10a and 10b are formed by irradiating the mask mark of the detection light on the mask M, and receiving the reflected light of the mask mark and the reflected light of the alignment mark on the glass substrate P obtained through the mask mark. A structure for measuring the amount of positional deviation between the photomask M and the glass substrate P. The measurement results of the registration detection systems 10a and 10b are output to the control device 17. In addition, the alignment detection systems 10a and 10b have a driving mechanism (not shown) that moves in the X direction, and are a structure that can be retracted from the lighting field during scanning exposure. The scanning exposure apparatus 1 configured as described above uses the flowchart shown in Fig. 4. The sequence of the pattern formed on the mask M by scanning exposure on a glass substrate is demonstrated. In addition, as shown in FIG. 10, in order to be able to move from the center of the glass substrate P (that is, the mounting surface of the substrate seat 5) and repeat the same 13 (please read the precautions on the back before filling in this page) )

I 訂： 丨線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 501184 A7 五、發明說明（〇 ) 步掃描進行掃描曝光，對第1層上曝光形成有分割成複數 而配置的圖案（曝光範圍、曝光領域）A1〜A4及對準標 記PM之玻璃基板P進行第2次曝光。另，此處之光罩座 台4、及基板座台5的移動及各照明系統模組i〇a〜10e中 的照明快門12的驅動，係藉由光罩座台驅動部37、及基 板座台驅動部40、及快門驅動部16而進行，而各個驅動 部依據分別控制各驅動部37、40、16的控制裝置來進行控 制的。 當開始曝光順序時（步驟S0)，首先係實施形態照度 量測（步驟S1)。具體而言，係依據檢測器41在各個投 影領域34a〜34e，量測基板座台5上（亦即玻璃基板p上 )的照度（曝光功率）PW，並透過濾波器驅動部22來驅 動濾波器21，以使各領域的照度能均一。又，在進行檢測 器41之照度量測的同時，亦以檢測器20實施照度量測， 並預先求得檢測器20、41之間的相關關係，據此，只要在 曝光中監視檢測器20的量測結果，即能推定出照射於玻瑪 基板P的曝光功率PW。 其次，在步驟S2中，由步驟S1所量測的曝光功率 PW、及塗佈於玻璃基板P的光阻的感度E、及如第3圖所 不之投影光學系統模組3a〜3e的X軸方向的曝光幅寬 ，以下式計算出掃描速度V。 V=PWXSL/E··· ( 1 ) 繼之，於步驟S3中，將基板座台5之可移動範圍（可 移動衝程）ST、與第10圖所示之用以掃描曝光玻璃基板p 14 (請先閱讀背面之注意事項再填寫本頁) · -線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 501184 B7 五、發明說明（1)) 之用所需的掃描範圍（掃描衝程）SE作比較，並判斷在掃 描方向是否有限制。此處之基板座台5的X軸方向的掃描 脈衝S，一般上係由如下決定。 令基板座台5達於掃描曝光速度V爲止之加速距離（ 加速範圍）爲L1、基板座台5 (及光罩座台4 )的振動爲 安定且同步偏離變小的同步穩定距離（同步穩定範圍）爲 L2、基板座台5從掃描曝光速度V至停止爲止之減速距離 (減速範圍）爲L3、玻璃基板P上的曝光圖案的長度爲 L4、第3圖所示之投影領域之總幅寬爲L5，則掃描衝程S 係以下式表示（此情形時，長度L4與幅寬L5之和爲同步 掃描範圍（同步掃描距離））。 s =L1 + L2 + L3 + L4 + L5 ……(2) 此處，令加速度（減速度）爲G、同步穩定時間爲τ ，則距離L1〜L3，可作成如下式所示。 L1 = V2/(2XG) ...... (3) L2 = V/T ...... (4) L3 = V2/(2XG) .••…(5) 繼之，如第10圖所示，由相對於全體圖案的X軸方 向的長度之玻璃基板P的面外側，亦即由基板座台5的兩 側端部作爲掃描曝光之開始的情形下’在圖案A2、A4的 +X側、及圖案Al、A3的-X側的兩方，設定同步穩定範 圍。是故，掃描衝程SE爲使用長度L6作爲距離L4，使用 式（2)〜（5)而自下式求得。 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---II-------I · I 1 (請先閱讀背面之注意事項再填寫本頁) 訂· --線· 501184 A7 __B7____ 五、發明說明（4 ) SE= Ll+2 X L2+L3+L5+L6 =2X V2/(2 X G)+2 X V X T+L5+L6 . ••…(6) 另一方面，自座台控制性能的觀點視之，以最大掃描 光速度νΜΑΧ，令玻璃基板P全體的X方向之長度L7 (參 閱第10圖）爲曝光範圍，且爲了縮短衝程而不設定同步穩 定距離的情形時，基板座台5的可移動衝程ST爲使用長 度L7作爲距離L4,可使用式（2)〜（5)以下式求得。 ST=L1+L3+L5+L6 =2 X Vmax2/(2xG)+L5+L7 接著，比較可移動衝程ST與掃描衝程SE的大小，若 可移動衝程ST爲掃描衝程SE以上，則掃描曝光玻璃基板 P之際，在掃描方向並無限制，自+X側或-X側的任意方 向均可掃描。 反之，若可移動衝程ST是未達掃描衝程SE，則限制 掃描方向。具體而言，在掃描曝光圖案Al、A3之際；係 設置各個圖案的+X側爲掃描開始位置，-X側爲掃描終了 位置（步驟S4)。又，在掃描曝光圖案A2、A4之際，則 設定各圖案的-X側爲掃描開始位置，+X側爲掃描終了位 置。亦即，設定加速範圍及同步穩定範圍於基板座台5的 衝程內的中央側、及設定減速範圍於端部側附近。據此， 以曝光圖案的同步掃描範圍實施加速及同步穩定，而能自 掃描衝程SE削除加速範圍、同步穩定範圍。但因減速範 圍是設定於曝光圖案的兩外側，故實際上是能削除穩定範 圍。因此，基板座台5的同步掃描範圍和玻璃基板p的曝 16 ^纸張尺度適用中國國家標準（CNS)A4規格（21(3 X 297公爱） --- ' (請先閱讀背面之注意事項再填寫本頁)Order I: 丨 Line · This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 501184 A7 V. Description of the invention (0) Scanning and exposure are performed in a step scan, and the exposure on the first layer is divided into A plurality of patterns (exposure range, exposure area) A1 to A4 and the glass substrate P of the alignment mark PM are exposed for the second time. The movement of the mask stage 4 and the substrate stage 5 and the driving of the illumination shutter 12 in each of the lighting system modules i0a to 10e are performed by the mask stage driving section 37 and the substrate. The seat drive section 40 and the shutter drive section 16 perform the control, and each drive section performs control according to a control device that controls the drive sections 37, 40, and 16, respectively. When the exposure sequence is started (step S0), the morphological illumination measurement is performed first (step S1). Specifically, the illuminance (exposure power) PW on the substrate stage 5 (that is, on the glass substrate p) is measured by the detector 41 in each of the projection areas 34a to 34e, and the filter is driven by the filter driving unit 22 Device 21 so that the illuminance in each field can be uniform. In addition, while performing the irradiance measurement of the detector 41, the irradiance measurement is also performed by the detector 20, and the correlation between the detectors 20 and 41 is obtained in advance. Accordingly, as long as the detector 20 is monitored during exposure As a result of the measurement, the exposure power PW irradiated on the Poma substrate P can be estimated. Next, in step S2, the exposure power PW measured in step S1, the sensitivity E of the photoresist applied to the glass substrate P, and X of the projection optical system modules 3a to 3e as shown in FIG. 3 The exposure width in the axial direction is calculated by the following formula. V = PWXSL / E ··· (1) Next, in step S3, the movable range (movable stroke) ST of the substrate table 5 and the glass substrate p 14 for scanning and exposing the substrate shown in FIG. 10 are scanned. (Please read the precautions on the back before filling this page) · -line · This paper size is applicable to China National Standard (CNS) A4 (210 x 297 mm) 501184 B7 V. Description of the invention (1)) The scanning range (scanning stroke) SE is compared, and it is judged whether there is a limit in the scanning direction. The scanning pulse S in the X-axis direction of the substrate stage 5 here is generally determined as follows. Let the acceleration distance (acceleration range) up to the scanning exposure speed V of the substrate base 5 be L1, the vibration of the substrate base 5 (and the mask base 4) be stable, and the synchronization deviation distance (synchronization stable) where the synchronization deviation becomes smaller. Range) is L2, the deceleration distance (deceleration range) from the scanning exposure speed V to the stop of the substrate table 5 is L3, the length of the exposure pattern on the glass substrate P is L4, and the total width of the projection area shown in FIG. 3 If the width is L5, the scanning stroke S is expressed by the following formula (in this case, the sum of the length L4 and the width L5 is the synchronous scanning range (synchronous scanning distance)). s = L1 + L2 + L3 + L4 + L5 …… (2) Here, if the acceleration (deceleration) is G and the synchronization stabilization time is τ, the distance L1 ~ L3 can be made as shown in the following formula. L1 = V2 / (2XG) ...... (3) L2 = V / T ...... (4) L3 = V2 / (2XG). ••… (5) followed by As shown in the figure, when the length of the X-axis direction of the entire pattern is outside the surface of the glass substrate P, that is, when the ends of both sides of the substrate table 5 are used as the start of scanning exposure, The + X side and the -X side of the patterns Al and A3 set the synchronization stable range. Therefore, the scanning stroke SE is obtained from the following equations using the length L6 as the distance L4 and using equations (2) to (5). 15 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) --- II ------- I · I 1 (Please read the precautions on the back before filling this page) Order · -Line · 501184 A7 __B7____ 5. Description of the invention (4) SE = Ll + 2 X L2 + L3 + L5 + L6 = 2X V2 / (2 XG) +2 XVX T + L5 + L6. ••… (6) On the other hand, from the viewpoint of the control performance of the table, the maximum scanning light speed νΜAX is used to make the length L7 of the entire glass substrate P in the X direction (see Fig. 10) the exposure range, and synchronization is not set in order to shorten the stroke. In the case of a stable distance, the movable stroke ST of the substrate stage 5 uses the length L7 as the distance L4, and can be obtained using the following equations (2) to (5). ST = L1 + L3 + L5 + L6 = 2 X Vmax2 / (2xG) + L5 + L7 Next, compare the size of the movable stroke ST and the scan stroke SE. If the movable stroke ST is above the scan stroke SE, scan the exposure glass In the case of the substrate P, the scanning direction is not limited, and scanning can be performed from any direction from the + X side or the -X side. Conversely, if the movable stroke ST is less than the scanning stroke SE, the scanning direction is restricted. Specifically, when the exposure patterns Al and A3 are scanned, the + X side of each pattern is set as the scan start position, and the -X side is set as the scan end position (step S4). When scanning the exposure patterns A2 and A4, the -X side of each pattern is set as the scan start position, and the + X side is set as the scan end position. That is, the acceleration range and the synchronization stabilization range are set near the center side within the stroke of the substrate stage 5, and the deceleration range is set near the end portion side. Accordingly, acceleration and synchronization stabilization are performed in the synchronous scanning range of the exposure pattern, and the acceleration range and synchronization stable range can be deleted from the scanning stroke SE. However, since the deceleration range is set on both sides of the exposure pattern, the stable range can actually be removed. Therefore, the synchronous scanning range of the substrate base 5 and the exposure of the glass substrate p 16 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (21 (3 X 297 public love) --- '(Please read the note on the back first (Fill in this page again)

501184 A7 ___ B7___ 五、發明說明（K ) 光範圍L6是幾乎相同。此情形之掃描衝程SE可作成下式 表示。 SE=2XL3+L5+L6 = 2XV2/(2xG)+L5+L6 ······ (6，） 如此處理下，若能設定掃描方向’則在步驟S5進行 對準及光順序的最佳化。又’對附加限制於掃描方向之情 形說明於下。在掃描方向無限制的情形時，係依據投影光 學模組3a〜3e的投影光學領域34a〜34e與玻璃基板p的 承載位置之位置關係，或投影領域34a〜34e與玻璃基板P 上的對準標記PM的位置關係，而選擇基板座台5的移動 距離之最短路徑即可。 以下，以第5圖至第7圖，說明對準及曝光順序之最 佳化之一例。對準（alignment)，係依據對位檢測系統 l〇a透過投影光學系統模組3a而量測位於投影領域34a的 對準標記PM，並依據對位檢測系統l〇b且透過投影光學 系統模組3e而量測位置投影領域34e的對準標記PM。 相對於光罩Μ與投影領域34a〜34e，根據其和第5圖 (a)所示之玻璃基板載放位置的距離，以曝光圖案A1作 爲最初之掃描曝光對象。又，圖案A3雖亦與投影領域 34a〜34e相距爲短，但於此處仍選擇圖案A1。此外，對圖 案A1係如第5圖（d)所示，因自圖案A1的+X側（玻璃 基板P的中央側）作爲掃描曝光的開始，故以最接近於掃 描開始位置的投影領域34a〜34e的對準標記PM作爲最後 的量測對象。換言之，以位於玻璃基板P的X軸方向外側 17 (請先閲讀背面之注意事項再填寫本頁) 士*»· -線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 501184 A7 _ --- _ B7_____ 五、發明說明（) 的對準標記作爲最初的量測對象。 因此’首先透過基板座台5，使載放的玻璃基板P移 動於-X軸方向及-Y軸方向，並如第5圖（b )所示，使 光罩Μ與圖案A1相對向，同時亦使圖案A1的-X側的對 準標記ΡΜ對位於投影領域34a、34e以進行對準校正。又 ，以下之說明，在各曝光圖案A1〜A4中，配置於+X側的 2個對準標記稱爲PM+、及配置於-X側的2個對準標記稱 爲 PM_ 〇 其次，移動光罩Μ及玻璃基板P於-X方向，如第5 圖（c)所示，使圖案Α1的對準標記ΡΜ+度位於投影領域 34a、34e以進行對準校正。繼之，更進而將投影領域 34a〜34e置於圖案A2上，並配置於相對於圖案A1的掃描 曝光開始位置。該掃描開始位置，係設定成可使投影領域 34a〜34e爲相對於圖案A1，其預計的基板座台5的加速範 圍及同步穩並定範圍份的距離得以完成區隔。 此後，同步移動光罩Μ玻璃基板P於+X方向，如第 5圖（e)所示，在同步掃描範圍逐次掃描曝光圖案Α1於 玻璃基板P。接著，投影領域34a〜34e爲在脫離圖案A1的 減速範圍下，減速光罩Μ與玻璃基板，並停止於第5圖（ Ο所示之位置。 繼之，在玻璃基板Ρ的X軸方向外側的對準標記之中 ，選擇離該停止位置之最接近投影領域34a〜34e的圖案A3 的對準標記PM-，並設定該圖案A3爲第2次掃描曝光。 此處是如第6圖（a)所示，移動玻璃基板P於+Y方向及- 18 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝 ·. -線- 501184 A7 _____B7 _ 五、發明說明（〇 ) X方向的同時，亦移動光罩Μ於-X方向，而使光罩Μ相 對向於玻璃基板Ρ的圖案A3，且使圖案A3的對準標記對 位於投影領域34a、34e以進行對準校正。 其次，移動光罩Μ及玻璃基板移動於-X方向，如第6 圖（b)所示使圖案A3的對準標記ΡΜ+對位於投影領域 34a、34e而進行對準校正。繼之，移動光罩Μ及玻璃基板 Ρ於-X方向，如第6圖（c)所示，配置投影領域34a〜34e 於相對於圖案A4上的圖案A3的掃描曝光開始位置。 接著，和圖案A1相同地，同步移動光罩與玻璃基板P 於+X方向，並在同步掃描範圍逐次掃描曝光圖案A3於玻 璃基板P。據此，投影領域34a〜34e、光罩Μ及玻璃基板 Ρ，係在如第6圖（d)所示之位置，結束圖案A3的掃描 曝光。 接著，在玻璃基板P的X軸方向外側的圖案A2、A4 的對準標記中，選擇離該曝光結束位置之最接近於投影領 域34a〜34e的圖案A4的對準標記PM+，並設定該圖案A4 爲第3次掃描曝光。此處，如第6圖（e)所示，移動玻璃 基板P於-X方向，使光罩Μ相對向於玻璃基板p的圖案 A4，並將圖案A的對準標記PM+對位於投影領域34a、 34e以進行對準校正。 次之，移動光罩Μ及玻璃基板P於+X方向’如第6 圖（0所示，將圖案Α4的對準標記ΡΜ-對位於投影領域 34a、34e以進行對準校正。繼之，更進而移動光罩Μ及玻 璃基板Ρ於+Χ方向，如第6圖（g)所示，配置投影領域 19 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) •裝· 訂· -線- 501184 A7 ____Β7_______ 五、發明說明（) 34a〜34e於相對於位在圖案A3上的圖案Α4的掃描曝光開 始位置（玻璃基板P的中央側）。接著，同步移動光罩M 與玻璃基板P，並在同步掃描範圍逐次掃描曝光圖案A4於 玻璃基板P，係在第6圖（h)所示之位置’結束圖案A4 的掃描曝光。 在最後，將曝光圖案A2予以曝光之際’移動玻璃基 板P於-Y方向及+X方向的同時，亦移動光罩M於x方向 ，如第7圖（a)所示，使光罩Μ相對向於玻璃基板P的 圖案Α2，且使圖案Α2的對準標記ΡΜ+對位於投影領域 34a、34e以進行對準校正。 次之，移動光罩Μ及玻璃基板P於+X方向，如第7 圖（b)所示，將圖案A2的對準標記PM-對位於投影領域 34a、34e以進行對準校正。繼之，更進而移動光罩Μ及玻. 璃基板Ρ於+Χ方向，如第7圖（c)所示’配置投影領與 34a〜34e於相對於位於圖案Α1上方的圖案Α2的掃描曝光 開始位置。 接著，和圖案A4相同地，同步移動光罩Μ與玻璃基 板Ρ於-X方向，在同步掃描範圍逐次掃描曝光圖案Α2於 玻璃基板Ρ。據此，投影領域34a〜34e、光罩Μ及玻璃基 板Ρ，係在如第7圖（d)所示之位置，結束圖案2的掃描 曝光。如此地，當結束圖案A1〜A4的掃描曝光時，如第7 圖（e)所示，移動玻璃基板P於原載放位置。藉由以上處 理，即完成了依據被設定的掃描方向的對準及曝光順序的 最佳化。 20 (請先閱讀背面之注意事項再填寫本頁) 訂： ，線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 501184 A7 _ —_ B7_____ 五、發明說明（） 重返第4圖說明之，步驟S6中，係沿著如上述之步 驟S5之最佳化的對準及曝光順序，而實際地實施對準及曝 光並結束此程序（步驟S7)。 本實施形態的掃描曝光方法及掃描型曝光裝置，係比 較基板座台5的可移動衝程ST與掃描曝光圖案A1〜A4之 際的掃描衝程SE，若可移動衝程ST是未達掃描衝程SE， 則能以限制掃描方向來削除同步穩定範圍。此結果，即能 縮短基板座台5所必須之移動衝程（移動範圍）。因此， 本實施形態即能令曝光裝置1本身定型於小型，其步跡（ foot print)亦能縮小。 此外，本實施形態之掃描曝光方法及掃描型曝光裝置 ，在縮短基板座台5的移動衝程的情形下，亦能使設置於 基板座台上的移動鏡縮短且輕量，故能提昇相對於玻璃基 板P (對準標記）之位置量測精度或位置控制精度，且亦 提昇圖案的定位精度。 第8圖爲表示本發明之掃描曝光方法之第2實施形態 圖。於該圖中，和第4圖所示之第1實施形態的構成要素 相同的要素，係賦予相同符號，並省略其說明。第2實施 形態與上述第1實施形態的相異之處，係在因應於圖案的 曝光精度而適當地設定複數的穩定時間。 一般而言，掃瞄曝光之前〈同步掃瞄前〉的同步穩定 時間T，係爲了穩定座台加速時的振動用之時間，故密切 關聯著曝光精度，在加長同步穩定時間的情形下，即能提 昇曝光精度。但是，當同步穩定時間變長，則產生所謂處 21 氏張尺度適用中國Ϊ家標準(CNS)A4規格（21G X 297公f )&quot; ----1---I--II— · I I (請先閱讀背面之注意事項再填寫本頁) 訂- -線 501184 A7 ____ B7 ___ 五、發明說明（/ ) 理能力〈Through put〉延遲或座台衝程變長之不適合情況 。於此，本實施形態係因應於製程，而預先設定例如閘極 層或汲極·源極層之嚴格的曝光精度所必須的精緻進程爲 穩定時間Tfine、比精細進程所必須的精度較緩和的粗略進 程爲穩定時間Trough等兩種的同步穩定時間〈 TfinPTnnigh〉，且因應於掃瞄曝光的實施而選擇穩定時 間。 具體而言，在步驟S2計算出掃瞄速度V之後，判斷 曝光圖案是爲閘級層或汲極層·源極層〈步驟S8〉，在爲 閘極層時候將穩定時間設定爲Tfine〈步驟S9&gt;，在不爲 閘極層時則設定穩定時間爲Trough〈步驟S10〉。繼而使 用經設定的同步穩定時間，而實施步驟S3以後的程序。 又，上述實施形態中，在掃瞄方向是作成兩個曝光圖 案的並列構成，但3個以上的曝光圖案的並列的情形時， 係對位於掃瞄方向的端部附近的的曝光圖案，藉由設定減 速範圍於該端部側’以削除基板座台5的同步穩定範圍而 能縮短掃瞄衝程SE。 此外，上述實施形態中，係依據玻璃基板P的曝光範 圍的長度〈X軸方向的全長〉L7，而設定基板座台5的可 移動衝程ST，但並不自限於此，即使是以其他約束而作成 設定，亦能適用本發明之掃瞄曝光方法。 此外，上述之實施形態，係對於第1次進程所曝光形 成的玻璃基板P重疊曝光第2次的情形爲例而說明，但第 1次進程之曝光，因不進行對準標記PM的量測，故考量 22 ^&quot;張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐) — '^ -------------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂- 501184 A7 ___ ___^Β7____ 五、發明說明（W ) 玻璃基板Ρ的載放位置，非載放位置即掃瞄方向，以設定 基板座台5的移動距離是可形成最短路徑即可。 又，作爲本實施形態的基板’並不只限於液晶顯示裝 窻用之玻璃基板Ρ、半導體裝置用之半導體晶圓、或薄膜 磁頭用之陶瓷晶圓、或曝光裝置所使用的光罩或標線片原 版〈合成石英、矽晶圓〉等均可適用。 作爲掃瞄型曝光裝置1的種類，並不只限曝光液晶顯 不裝置圖案於玻璃基板Ρ的液晶顯不裝置製造用之曝光裝 置，亦可廣泛採用曝光半導體裝置於晶圓的半導體裝置製 造用之曝光裝置，或用以製造薄膜磁頭、攝影元件〈CCD 〉或標線片之曝光裝置等。 又，作爲光源6，可使用超高壓水銀燈所產生的輝線 〈g 線〈436nm〉、h 線〈404.7nm〉、i 線〈365nm〉、 KrF準分子雷射〈248nm〉、ArF準分子雷射〈193nm〉、 F2 雷射〈157nm&gt;〉等。 投影系統模組3a〜3e的倍率，並不限是等倍率，亦可 爲縮小系統或放大系統。又，作爲投影系統模組3a〜3e， 在使用準分子雷射等的遠紫外線的情形時，可使用能透過 紫外線的石英或螢光石等材料作爲玻璃材質，在使用F2雷 射或X線時的情形時，可使用反射折射系統或折射系統之 光學系統〈光罩Μ亦使用反射型種類〉。此外，不使用投 影模組3a〜3e、亦可採用緊密接合光罩Μ與玻璃基板ρ而 曝光光罩Μ的密接式曝光裝置或鏡投射型的曝光裝置。 在使用線性馬達〈參考USP5,623,853或USP5,528 1 18 23 $^尺度適用中國國家標準（CNS)A4 ϋ〇 X 297公fl--一~ - (請先閱讀背面之注意事項再填寫本頁)501184 A7 ___ B7___ 5. Description of the invention (K) The light range L6 is almost the same. The scanning stroke SE in this case can be expressed by the following formula. SE = 2XL3 + L5 + L6 = 2XV2 / (2xG) + L5 + L6 (6,) In this process, if the scan direction can be set, then the alignment and light order are optimal in step S5. Into. The additional limitation to the scanning direction is described below. When the scanning direction is unlimited, it is based on the positional relationship between the projection optical fields 34a to 34e of the projection optical modules 3a to 3e and the bearing position of the glass substrate p, or the alignment between the projection fields 34a to 34e and the glass substrate P. The positional relationship of the PM is marked, and the shortest path of the moving distance of the substrate stage 5 may be selected. An example of optimizing the alignment and exposure sequence will be described below with reference to FIGS. 5 to 7. Alignment is based on the alignment detection system 10a through the projection optical system module 3a to measure the alignment mark PM located in the projection area 34a, and according to the alignment detection system 10b and through the projection optical system module The group 3e measures the alignment mark PM of the position projection area 34e. With respect to the mask M and the projection area 34a to 34e, the exposure pattern A1 is used as the initial scanning exposure target based on the distance from the mask M and the glass substrate placement position shown in Fig. 5 (a). Although the pattern A3 is also short from the projection area 34a to 34e, the pattern A1 is still selected here. The pattern A1 is shown in FIG. 5 (d). Since the + X side (the center side of the glass substrate P) of the pattern A1 is used as the start of scanning exposure, the projection area 34a closest to the scanning start position is used. An alignment mark PM of ~ 34e is the last measurement target. In other words, it is located on the outer side of the X-axis direction of the glass substrate P. 17 (Please read the precautions on the back before filling in this page) 士 * »·-The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) ) 501184 A7 _ --- _ B7_____ V. Alignment mark of the description of the invention () as the initial measurement object. Therefore, 'the substrate substrate 5 is first passed through, and the placed glass substrate P is moved in the -X axis direction and the -Y axis direction, and as shown in Fig. 5 (b), the photomask M is opposed to the pattern A1, and The alignment mark PM on the -X side of the pattern A1 is also aligned to the projection areas 34a and 34e for alignment correction. In the following description, in each of the exposure patterns A1 to A4, the two alignment marks arranged on the + X side are called PM +, and the two alignment marks arranged on the -X side are called PM_〇. Next, the light is moved. The cover M and the glass substrate P are aligned in the -X direction, as shown in Fig. 5 (c), so that the alignment mark PM + of the pattern A1 is positioned in the projection areas 34a and 34e to perform alignment correction. Then, the projection areas 34a to 34e are further placed on the pattern A2 and arranged at the scanning exposure start position with respect to the pattern A1. This scanning start position is set so that the projection area 34a to 34e can be distinguished from the pattern A1, the predicted acceleration range of the substrate base 5 and the distance of the synchronization and stabilization range. Thereafter, the photomask M glass substrate P is moved synchronously in the + X direction, and as shown in FIG. 5 (e), the exposure pattern A1 is sequentially scanned on the glass substrate P in the synchronous scanning range. Next, the projection areas 34a to 34e decelerate the reticle M and the glass substrate in the deceleration range of the pattern A1, and stop at the position shown in FIG. 5 (0.) Next, outside the X-axis direction of the glass substrate P Among the alignment marks, select the alignment mark PM- of the pattern A3 closest to the projection area 34a to 34e from the stop position, and set the pattern A3 as the second scanning exposure. Here is as shown in FIG. 6 ( a) As shown, the moving glass substrate P is in the + Y direction and-18 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) (Please read the precautions on the back before filling this page)-装 ·.-线-501184 A7 _____B7 _ V. Description of the Invention (〇) At the same time as the X direction, the photomask M is also moved in the -X direction, so that the photomask M is opposite to the pattern A3 of the glass substrate P, and the pattern is The alignment mark of A3 is located in the projection areas 34a and 34e to perform alignment correction. Next, move the photomask M and the glass substrate to the -X direction, and make the alignment mark PM of the pattern A3 as shown in Fig. 6 (b). + Perform alignment correction on the projection areas 34a and 34e. Next, move the mask M and The glass substrate P is located in the -X direction, and as shown in Fig. 6 (c), the projection exposure positions of the projection areas 34a to 34e relative to the pattern A3 on the pattern A4 are arranged. Next, the light is moved in synchronization with the pattern A1 The mask and the glass substrate P are in the + X direction, and the exposure pattern A3 is sequentially scanned in the synchronous scanning range on the glass substrate P. Accordingly, the projection areas 34a to 34e, the mask M, and the glass substrate P are shown in FIG. 6 (d ), The scanning exposure of the pattern A3 is ended. Next, among the alignment marks of the patterns A2 and A4 on the outer side of the X-axis direction of the glass substrate P, select the closest projection area 34a to 34e from the end position of the exposure. The alignment mark PM + of the pattern A4 is set, and the pattern A4 is set to the third scanning exposure. Here, as shown in FIG. 6 (e), the glass substrate P is moved in the -X direction, so that the mask M is opposite to The pattern A4 of the glass substrate p is aligned with the alignment mark PM + of the pattern A in the projection areas 34a and 34e. Next, the photomask M and the glass substrate P are moved in the + X direction, as shown in FIG. 6 ( As shown in 0, the alignment mark PM-pair of the pattern A4 is located in the projection area 34a, 3 4e to perform alignment correction. Next, move the photomask M and the glass substrate P in the + X direction, as shown in Figure 6 (g), and configure the projection area. 19 This paper size applies to Chinese national standards (CNS> A4) Specifications (210 X 297 mm) (Please read the precautions on the back before filling in this page) • Binding · Binding ·-Thread-501184 A7 ____ Β7 _______ 5. Description of the invention () 34a ~ 34e are relative to those on the pattern A3 The scanning exposure start position of the pattern A4 (the center side of the glass substrate P). Next, the mask M and the glass substrate P are moved in synchronization, and the exposure pattern A4 is sequentially scanned on the glass substrate P in the synchronous scanning range, and the scanning exposure of the pattern A4 is ended at the position 'shown in FIG. 6 (h). Finally, when the exposure pattern A2 is exposed, while moving the glass substrate P in the -Y direction and the + X direction, the mask M is also moved in the x direction, as shown in Fig. 7 (a), so that the mask M The alignment mark PM + of the pattern A2 is positioned opposite to the pattern A2 of the glass substrate P in the projection areas 34a and 34e to perform alignment correction. Next, move the mask M and the glass substrate P in the + X direction, as shown in Fig. 7 (b), and align the alignment mark PM- of the pattern A2 in the projection areas 34a and 34e to perform alignment correction. Then, the photomask M and the glass substrate P are moved in the + X direction, as shown in FIG. 7 (c), 'the projection collar and 34a to 34e are arranged with respect to the scanning exposure of the pattern A2 located above the pattern A1. Start position. Next, in the same manner as the pattern A4, the photomask M and the glass substrate P are moved in the -X direction simultaneously, and the exposure pattern A2 is sequentially scanned on the glass substrate P in the synchronous scanning range. Accordingly, the projection areas 34a to 34e, the mask M, and the glass substrate P are positioned as shown in Fig. 7 (d), and the scanning exposure of the pattern 2 is ended. In this way, when the scanning exposure of the patterns A1 to A4 is completed, as shown in FIG. 7 (e), the glass substrate P is moved to the original placement position. With the above processing, the alignment and exposure order optimization according to the set scanning direction is completed. 20 (Please read the precautions on the back before filling this page) Order: ， The size of the thread paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 public love) 501184 A7 _ —_ B7_____ 5. Description of the invention () Referring back to FIG. 4, step S6 follows the optimized alignment and exposure sequence of step S5 as described above, and actually performs alignment and exposure and ends this procedure (step S7). The scanning exposure method and the scanning exposure apparatus of this embodiment compare the scanning stroke SE of the movable stroke ST of the substrate stage 5 with the scanning exposure patterns A1 to A4. If the movable stroke ST is less than the scanning stroke SE, By limiting the scanning direction, the synchronization stable range can be eliminated. As a result, it is possible to shorten the moving stroke (moving range) necessary for the substrate stage 5. Therefore, in this embodiment, the exposure apparatus 1 itself can be made compact, and its foot print can also be reduced. In addition, the scanning exposure method and the scanning exposure device of this embodiment can shorten and move the moving mirror provided on the substrate base in a case where the moving stroke of the substrate base 5 is shortened. The position measurement accuracy or position control accuracy of the glass substrate P (alignment mark) also improves the positioning accuracy of the pattern. Fig. 8 is a view showing a second embodiment of the scanning exposure method of the present invention. In this figure, the same elements as those of the first embodiment shown in Fig. 4 are assigned the same reference numerals, and descriptions thereof will be omitted. The second embodiment differs from the first embodiment described above in that a plurality of stabilization times are appropriately set in accordance with the exposure accuracy of the pattern. In general, the synchronization stabilization time T before the scanning exposure (before the synchronous scanning) is the time taken to stabilize the vibration of the platform during acceleration, so it is closely related to the exposure accuracy. When the synchronization stabilization time is lengthened, that is, Can improve exposure accuracy. However, when the synchronization stabilization time becomes longer, the so-called 21's scale is applied to the Chinese family standard (CNS) A4 specification (21G X 297 male f) &quot; ---- 1 --- I--II-- · II (Please read the notes on the back before filling this page) Order--Line 501184 A7 ____ B7 ___ V. Description of the invention (/) It is not suitable for the delay of the processing capacity (Through put) or the stroke of the table to become longer. Here, according to the present embodiment, the delicate process necessary for strict exposure accuracy of, for example, the gate layer or the drain and source layers is set in advance as the stabilization time Tfine, which is gentler than the precision required for the fine process in accordance with the manufacturing process. The rough process is two kinds of synchronous stabilization time <TfinPTnnigh> such as stabilization time, and the stabilization time is selected according to the implementation of the scanning exposure. Specifically, after the scan speed V is calculated in step S2, it is determined whether the exposure pattern is a gate layer or a drain layer or a source layer (step S8), and the stabilization time is set to Tfine when it is a gate layer (step S9> When the gate layer is not set, the settling time is set to Trough (step S10). Then, using the set synchronization stabilization time, the procedures after step S3 are performed. In the above embodiment, two scanning patterns are arranged side by side in the scanning direction, but when three or more exposure patterns are arranged in parallel, the exposure pattern located near the end in the scanning direction is borrowed. By setting the deceleration range on the end portion side, the synchronization stable range of the substrate stage 5 is eliminated, and the scanning stroke SE can be shortened. In addition, in the above embodiment, the movable stroke ST of the substrate base 5 is set based on the length of the exposure range of the glass substrate P (the total length in the X-axis direction) L7, but it is not limited to this, even if it is subject to other constraints The setting can also be applied to the scanning exposure method of the present invention. In the above embodiment, the case where the glass substrate P formed by the first pass exposure is overlapped and exposed for the second pass is described as an example, but the exposure of the first pass does not measure the alignment mark PM. , So consider 22 ^ &quot; Zhang scale is applicable to China National Standard (CNS) A4 specifications (210 X 297 meals) — '^ ------------- install --- (Please read the back first Please pay attention to this page before filling in this page) Order-501184 A7 ___ ___ ^ Β7 ____ 5. Description of the invention (W) The placement position of the glass substrate P, the non-placement position is the scanning direction, to set the movement distance of the substrate base 5 is The shortest path can be formed. The substrate 'in this embodiment is not limited to a glass substrate P for liquid crystal display mounting, a semiconductor wafer for a semiconductor device, a ceramic wafer for a thin-film magnetic head, or a photomask or reticle used for an exposure device. The original film (synthetic quartz, silicon wafer) can be used. As the type of the scanning exposure device 1, it is not limited to an exposure device for manufacturing a liquid crystal display device for exposing a liquid crystal display device pattern on a glass substrate P, and a semiconductor device for exposing a semiconductor device to a wafer can also be widely used. Exposure device, or exposure device used to manufacture thin-film magnetic head, photographic element (CCD) or reticle. In addition, as the light source 6, a glow line <g line <436 nm>, h line <404.7 nm>, i line <365 nm>, KrF excimer laser <248 nm>, ArF excimer laser < 193nm>, F2 laser <157nm>, etc. The magnifications of the projection system modules 3a to 3e are not limited to equal magnifications, and may be a reduction system or an enlargement system. In addition, as the projection system modules 3a to 3e, when using far-ultraviolet rays such as excimer lasers, materials such as quartz or fluorite that can transmit ultraviolet rays can be used as glass materials. When F2 lasers or X-rays are used In this case, a reflective refracting system or an optical system of the refracting system (a reflection type is also used for the mask M). In addition, instead of using the projection modules 3a to 3e, a close contact type exposure device or a mirror projection type exposure device that exposes the photomask M by tightly bonding the photomask M and the glass substrate ρ may be used. When using a linear motor (refer to USP5,623,853 or USP5,528 1 18 23 $ ^ standard is applicable to China National Standard (CNS) A4 ϋ〇X 297 公 fl-one ~-(Please read the precautions on the back before filling this page )

501184 A7 ___—_ __B7___ 五、發明說明（&gt;Z) --------------裝 i — (請先閱讀背面之注意事項再填寫本頁) 〉於基板座台5或光罩座台4的情形時，係可採用使用有 空氣軸承的空氣磁上型及使用有的浮磁型之其中之一。又 ，各座台4、5係可爲沿著光導器而移動的類型、或可爲不 設置光導器的無光導器類型。 作爲各座台4、5的驅動機構37、40，係可使用藉由 磁鐵成二次元配置的磁鐵單元〈永久磁鐵〉與線圏成二次 元配置的電樞單元作成相對向而產生的磁力，以驅動各座 台4、5的平面馬達。該情形時，係可將磁鐵單元與電樞單 元的其中之一連接於座台4、5，並將磁鐵單元與電樞單元 另一方設置於各座台4、5的移動面側〈基台〉。 丨線· 因基板座台5的移動而產生的反作用力，爲了能不使 其傳達至投影光學系統3，可如特開平8-166475號公報〈 4SP5,528，118〉所揭露般地，使用框架構件以機械方式使 其消失於地面。本發明亦可適用於具有如此構造之曝光裝 置。 因光罩座台4的移動而產生的反作用力，爲了能不使 其傳達至投影光學系統3，可如特開平8-330224號公報（ US S/N 08/416,558)所揭露般地，使用框架構件以機械方 式使其消失於地面。本發明亦可適用於具有如此構造之曝 光裝置。 如上所述，本發明實施形態之基板處理裝置之掃描型 曝光裝置1，係在保有既定之機械性精度、電氣性精度、 光學性精度的狀態下，組裝包含有列舉於本發明之申請專 利範圍的各構成要素之各種副系統而製造完成。爲了確保 24 ^張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐1 &quot; 501184 A7 ----------------- B7__________^ 五、發明說明（〆）） (請先閱讀背面之注意事項再填寫本頁) 這些的各種精度，在該組裝的前後，係對各種光學系統係 進行以達成光學性精度的調整、對各種機械系統進行了用 以達成機械性精度的調整、對各種電氣系統進行了用以達 成電氣性精度的調整。從各種副系統組裝至曝光裝置的工 程’係包含有各種副系統之相互間的機械性連接、電氣電 路的配線連接、氣壓電路的配管連接等。在組裝該各種副 系統至曝光裝置的工程之前，當然更有各副系統個別的組 裝工程自不在話下。完成了各種副系統至曝光裝置的組裝 工程之後，進行總合調整，以確保成爲整體性曝光裝置的 各種精度。又，曝光裝置的製造係在有控制著溫度及淸潔 度等無塵室來進行爲佳。 •線- 液晶顯示裝置或半導體裝置等的裝置係如第9圖所示 ，經過了實施液晶顯示裝置等的機能·性能設計的步驟 S201、依該設計步驟而製作光罩M (標線片）的步驟S2〇2 、自石英等製作玻璃基板P、或自矽材料製作晶圓的步驟 S203、以前述實施形態之走掃型曝光裝置1而曝光光罩μ 的圖案於玻璃基板Ρ (或晶圓）的步驟S204、組裝液晶顯 示裝置等的步驟（爲晶圓時包含切割製程、打線製程、包 裝製程等）S205、檢查步驟S206等而製造。 (發明之功效） 如以上之說明般地，本發明之掃描曝光方法，係依據 座台的可移動範圍及掃描曝光基板之際移動座台的掃描範 圍，構成了設定座台的掃描方向的順序。 據此，該掃描曝光方法係即使可移動範圍是未達到掃 25 張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 ------ 501184 A7 ___B7 _ 五、發明說明（4) 描範圍的情形下’因能縮短座台所必須的移動範圍’故能 作成小型的曝光裝置本體’在能縮小步跡的同時’亦能獲 得提昇相對於基板之位置量測精度或位置控制精度之功效 Ο 本發明之掃描曝光方法係形成掃描範圍爲含有座台的 加速範圍、同步穩定範圍、同步掃描範圍、減速範圍之一 種構成。 據此，該掃描曝光方法係可削除走掃範圍之中之同步 穩、定範圍，而獲得可縮短座台所必須的移動範圍之功效。 本發明之掃描曝光方法，係依據掃描曝光基板的既定 領域的同步掃描範圍和座台的可移動範圍’而設定座台的 掃描方向之順序。 據此，該掃描曝光方法，係依據同步掃描的範圍和座 台的可移動範圍’獲得可縮短座台所必須的移動範圍之功 效。 本發明之掃描曝光方法，係依據同步掃描的範圍和基 板的曝光範圍’而設定座台的掃描方向之順序。 據此，該掃描曝光方法，係依據同步掃描的範圍和基 板的曝光範圍’而獲得可縮短座台所必須的移動範圍之功 效。 本發明之掃描曝光方法，係將位於座台的一端的端部 附近的曝光軺圍予以曝光之^際’依據同步掃描的範圍和基 板的曝光範圍’而設定座台的掃描方向之順序。 據此，該掃描曝光方法，係將位於座台的一端的端部 26 (請先閱讀背面之注意事項再填寫本頁)501184 A7 ___—_ __B7___ 5. Description of the invention (&gt; Z) -------------- install i — (Please read the precautions on the back before filling this page)〉 on the base plate In the case of 5 or photomask base 4, one of the air magnetic upper type using an air bearing and the floating magnetic type may be used. In addition, each of the stages 4 and 5 may be a type that moves along the light guide, or may be a type without a light guide without a light guide. As the driving mechanisms 37 and 40 of each of the seats 4 and 5, the magnetic force generated by the magnet units (permanent magnets) arranged in a two-dimensional arrangement of the magnets and the armature units arranged in a two-dimensional arrangement of the wires can be used to face each other. In order to drive the flat motors of the seats 4 and 5. In this case, one of the magnet unit and the armature unit can be connected to the bases 4, 5 and the other of the magnet unit and the armature unit can be installed on the moving surface side of each of the bases 4, 5 (base). 〉.丨 Line · In order to prevent the reaction force generated by the movement of the substrate stage 5 from being transmitted to the projection optical system 3, it can be used as disclosed in JP-A-8-166475 (4SP5,528,118). The frame members make it disappear to the ground mechanically. The present invention is also applicable to an exposure apparatus having such a structure. In order to prevent the reaction force generated by the movement of the mask base 4 to be transmitted to the projection optical system 3, it can be used as disclosed in Japanese Patent Application Laid-Open No. 8-330224 (US S / N 08 / 416,558). The frame members make it disappear to the ground mechanically. The present invention is also applicable to an exposure device having such a structure. As described above, the scanning exposure apparatus 1 of the substrate processing apparatus according to the embodiment of the present invention is assembled in a state including the predetermined mechanical accuracy, electrical accuracy, and optical accuracy, and includes the scope of patent applications listed in the present invention. The various sub-systems of each of the constituent elements are completed. In order to ensure that the 24 ^ scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm 1 &quot; 501184 A7 ----------------- B7 __________ ^ V. Description of the invention ( 〆)) (Please read the precautions on the back before filling out this page) These various precisions are adjusted before and after the assembly of various optical systems to achieve optical accuracy adjustments, and various mechanical systems are used. Adjustment of mechanical accuracy was achieved, and various electrical systems were adjusted to achieve electrical accuracy. The process of assembling the various sub-systems to the exposure apparatus' includes mechanical connections between various sub-systems, wiring connections of electrical circuits, and piping connections of pneumatic circuits. Before assembling the various sub-systems to the exposure device, of course, the individual assembly processes of each sub-system are not a problem. After the assembly process of various sub-systems to the exposure device is completed, the total adjustment is performed to ensure various accuracy of the integrated exposure device. It is also preferable to manufacture the exposure device in a clean room with controlled temperature and cleanliness. • Line-As shown in Fig. 9, a device such as a liquid crystal display device or a semiconductor device has undergone step S201 of designing functions and performance of the liquid crystal display device and the like, and a photomask M (reticle) is produced according to the design steps. Step S202, step S203 of manufacturing a glass substrate P from quartz, or manufacturing a wafer from a silicon material, and exposing the pattern of the photomask μ to the glass substrate P (or crystal) using the scanning-type exposure apparatus 1 of the foregoing embodiment. (Circle), step S204, assembling a liquid crystal display device, and the like (including a dicing process, a wire bonding process, and a packaging process when the wafer is included) S205, an inspection step S206, and the like. (Effects of the Invention) As explained above, the scanning exposure method of the present invention constitutes a sequence for setting the scanning direction of the pedestal according to the movable range of the pedestal and the scanning range of the mobile pedestal when the exposure substrate is scanned. . According to this, the scanning exposure method is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) even if the movable range is less than 25 scans. ------ 501184 A7 ___B7 _ V. Description of the invention ( 4) In the case of tracing range, 'because the movement range necessary for the table can be shortened', a small exposure device body can be made, 'while reducing the track,' it can also improve the position measurement accuracy or position control relative to the substrate. The effect of accuracy 〇 The scanning exposure method of the present invention is to form a scanning range including a table acceleration range, a synchronous stable range, a synchronous scanning range, and a deceleration range. According to this, the scanning exposure method can remove the scanning range The synchronous and stable range can be achieved in order to obtain the effect of shortening the necessary moving range of the table. The scanning exposure method of the present invention is set according to the synchronous scanning range of the predetermined area of the scanning exposure substrate and the movable range of the table. The order of the scanning directions of the platform. According to this, the scanning exposure method is based on the synchronous scanning range and the movable range of the platform. The effect of shortening the necessary moving range of the stage. The scanning exposure method of the present invention sets the order of the scanning direction of the stage according to the synchronous scanning range and the exposure range of the substrate. According to this, the scanning exposure method is based on The scanning range and the exposure range of the substrate are synchronized to obtain the effect of shortening the necessary moving range of the table. The scanning exposure method of the present invention is to expose the exposure frame near the end of one end of the table to the exposure time. 'Set the order of the scanning direction of the table according to the range of the synchronous scanning and the exposure range of the substrate'. According to this, the scanning exposure method will be located at the end 26 of one end of the table (please read the precautions on the back before (Fill in this page)

本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公蓳） 501184 A7 _____B7_— _ 五、發明說明（〇 附近的曝光範圍予以曝光之際，可獲得縮短座台所必須的 移動範圍。 / 本發明之掃描曝光方法，係依據有無設置加速及同步 穩定範圍於可移動範圍內，而設定座台之掃描方向之順序 0 據此，該掃描曝光方法，係在無設置加速及同步穩定 範圍內時，可獲得可縮短座台所必須之移動範圍之功效。 本發明之掃描型曝光裝置，控制機構爲依據座台之可 移動範圍和掃描曝光基板之際之座台的移動之掃描範圍， 而設定座台之掃描方向之構成。 據此，該掃描型曝光裝置，即使在可移動範圍是未達 掃描範圍的情形時，亦能縮短座台所必須之移動範圍，故 能作成小型的曝光裝置本體，在能縮小步跡的同時，亦能 獲得提昇相對於基板之位置量測精度或位置控制精度之功 效。 本發明之掃描型光裝置，係掃描範圍爲包含座台的加 速範圍、同步穩定範圍、同步掃描範圍、減速範圍，且控 制機構爲使同步掃描範圍和基板的曝光範圍是能形成大致 相同之狀態，而設定座台之掃描方向之構成。 據此，該掃描型曝光裝置，係可省略範圍之中削除同 步穩定範圍，而獲得縮短座台所必須之移動範圍之功效。 本發明之掃描型曝光裝置，係控制機構爲設定減速範 圍於可移動範圍之一端附近之構成。 據此，該掃描型曝光裝置，係可自掃描範圍之中削除 27 (請先閱讀背面之注意事項再填寫本頁)This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 cm) 501184 A7 _____ B7_— _ V. Description of the invention (When the exposure range near 〇 is exposed, the necessary movement range of the table can be shortened. According to the scanning exposure method of the present invention, the order of setting the scanning direction of the table is set according to whether the acceleration and synchronization stable range are within the movable range. Based on this, the scanning exposure method is within the range of no acceleration and synchronization stability. The scanning type exposure device of the present invention has a control mechanism that is set according to the movable range of the stage and the scanning range of the movement of the stage when the exposure substrate is scanned. The structure of the scanning direction of the table. According to this, even when the movable range is less than the scanning range, the required moving range of the table can be shortened, so it can be made into a small exposure device. While reducing the track, it can also obtain the power to improve the position measurement accuracy or position control accuracy relative to the substrate. The scanning type optical device of the present invention has a scanning range including an acceleration range, a synchronous stable range, a synchronous scanning range, and a deceleration range of the table, and the control mechanism can make the synchronous scanning range and the exposure range of the substrate substantially the same. In this state, the configuration of the scanning direction of the table is set. According to this, the scanning exposure device can eliminate the synchronous stable range from the range and obtain the effect of shortening the moving range necessary for the table. The scanning type of the present invention The exposure device is a control mechanism that sets the deceleration range near one end of the movable range. According to this, the scanning exposure device can remove 27 from the scanning range (please read the precautions on the back before filling this page) )

氏張尺度適用中關家標準（CNS)A4規格（21(^ 297公釐） ~ 501184 A7 ___ B7 _ 五、發明說明（4 ) 同步穩定範圍，而獲得縮短座台所必須之移動範圍之功效 Ο 本發明之掃描型曝光裝置，係控制機構爲因應於分割 成複數的曝光範圍之各範圍，而設定座台所必須的移動方 向之構成。 / 據此，該掃描型曝光裝置，係即使在曝光範圍爲分割 成複數之情形下，亦能縮小座台所必須之移動範圍，故能 作成小型的曝光裝置本體，在能獲得縮小步跡的同時，亦 能提昇相對於基板之位置量測精度或位置控制精度之功效 〇 (圖式之簡單說明） 第1圖爲表示本發明之實施形態圖，表示掃描型曝光 裝置之槪略構成之外觀立體圖。 第2圖爲掃描型曝光裝置之槪略構成圖。 第3圖爲投影光學系統模組所設定之投影領域之俯視 圖。 第4圖爲表示本發明之掃描曝光方法之第1實施形態 之流程圖。 第5圖爲用以說明對準及曝光順序用之說明圖。 第6圖爲用以說明對準及曝光順序用之說明圖。 弟7圖爲用以g兌明Μ準及曝光順序用之說明圖。 第8圖爲表示本發明之掃描型曝光方法之第2實施形 態之流程圖。 第9圖爲表示液晶顯示裝置之製造工程之一例之流程 28 &amp;^尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 訂· •線· 501184 A7 _B7_ 五、發明說明（β) 圖。 第10圖爲具有4個曝光圖案之玻璃基板之俯視圖。 (符號說明） Μ光罩（標線片） Ρ玻璃基板（基板） Α1〜Α4圖案（曝光範圍） 1掃描型曝光裝置 5基板座台（座台） 17控制裝置（控制機構） (請先閱讀背面之注意事項再填寫本頁)The Zhang scale is applicable to the Zhongguanjia Standard (CNS) A4 specification (21 (^ 297 mm) ~ 501184 A7 ___ B7 _ V. Description of the invention (4) Synchronized and stable range to obtain the effect of shortening the movement range necessary for the table 〇 The scanning exposure device of the present invention is a control mechanism that sets the movement direction necessary for the table in accordance with each range divided into a plurality of exposure ranges. / According to this, the scanning exposure device is even in the exposure range. In the case of being divided into a plurality, it is also possible to reduce the necessary movement range of the table, so it can be made into a small exposure device body, which can reduce the track while improving the position measurement accuracy or position control relative to the substrate. The effect of accuracy 0 (simple description of the drawing) FIG. 1 is a perspective view showing an embodiment of the present invention and a schematic configuration of a scanning exposure device. FIG. 2 is a schematic configuration view of a scanning exposure device. Fig. 3 is a top view of the projection area set by the projection optical system module. Fig. 4 is a flow chart showing the first embodiment of the scanning exposure method of the present invention. Fig. 5 is an explanatory diagram for explaining the alignment and exposure order. Fig. 6 is an explanatory diagram for explaining the alignment and exposure order. Fig. 7 is an illustration for the g order and exposure order. 8 is a flowchart showing the second embodiment of the scanning exposure method of the present invention. FIG. 9 is a flowchart showing an example of a manufacturing process of a liquid crystal display device. 28 &amp; (CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page) Binding · • Thread · 501184 A7 _B7_ V. Description of the invention (β) Figure. Figure 10 shows 4 exposures A plan view of a patterned glass substrate. (Symbol description) M mask (reticle) P glass substrate (substrate) Α1 ～ Α4 pattern (exposure range) 1 scanning exposure device 5 substrate base (pedestal) 17 control device ( Control agency) (Please read the notes on the back before filling this page)

本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

經濟部智慧財產局員工消費合作社印製 501184 is8 __g___ __ 六、申請專利範圍 ι·一種掃描曝光方法，係藉由沿掃描方向同步掃描光 罩與基板，以將前述光罩之圖案掃描曝光於基板上，其特 徵在於： 依據載置基板的座台之可移動範圍、以及掃描曝光基 板時座台所移動之掃描範圍，來設定前述座台之掃描方向 〇 2·如申請專利範圍第1項之掃描曝光方法，其中，前 述掃描範圍係包含：座台之加速範圍、用以減少光罩與基 板之同步偏離之座台的同步穩定範圍、同步掃描光罩與基 板之座台的同步掃描範圍、座台之減速範圍。 3·如申請專利範圍第2項之掃描曝光方法，其中，在 前述同步掃描範圍掃描曝光圖案於基板之既定領域時，係 依據同步掃描範圍與可移動範圍的關係來設定前述座台之 掃描方向。 4·如申請專利範圍第2項或第3項之掃描曝光方法， 其中’係依據同步掃描範圍與掃描曝光圖案之基板曝光範 圍來設定座台之掃描方向。 5.如申請專利範圍第4項之掃描曝光方法，其中，將 位於前述掃描方向之座台一端部附近之曝光範圍予以曝光 時，係依據同步掃描範圍與曝光範圍來設定座台之掃描方 向。 6·如申請專利範圍第2項之掃描曝光方法，其中，在 前述同步掃描之範圍進行曝光時，係依據有無設置加速及 同步穩定之範圍於可移動範圍內，而設定座台之掃描方向 1 ^紙張尺度適用中國國家標準（CNS)A4規格（210&gt;&lt; 297公釐） &quot;^ (請先閱讀背面之注意事項再填寫本頁) 訂·· i線. 501184 A8 B8 C8 D8 六、申請專利範圍 7.—種掃描型曝光裝置，係藉由沿掃描方向同步掃描 光罩與基板，以將光罩之圖案掃描曝光於基板之曝光範圍 ，其特徵爲具備： 載置有基板之移動於可移動範圍之座台；及 掃描曝光基板之曝光範圍時，以既定之掃描範圍驅動 座台之控制機構； 控制機構係依據可移動範圍與既定之掃描範圍，而設 定座台之掃描方向。 8·如申請專利範圍第7項之掃描型曝光裝置，其中， 則述既定之掃描範圍係包含：座台之加速範圍、用以減少 光罩與基板之同步偏離之座台同步穩定範圍、同步掃插光 罩與基板之座台同步掃描範圍、及座台之減速範阖； 控制機構，係以同步掃描範圍和基板的曝光範園形· 大致一致的方式，來設定座台之掃描方向。 9·如申請專利範圍第8項之掃描型曝光裝竃，其中 相對於前述座台的載置面移動於掃描方向而配窻之^ ’ 經濟部智慧財產局員工消費合作社印製 在曝光範圍進行掃描曝光時，前述控制機構係設 圍於可移動範圍之一端附近。 曝光裝 光範ft -------------- (請先閱讀背面之注意事項再填寫本頁} -線· ί〇·如申請專利範圍第7、8項或9項之掃棰型 置，其中，前述基板之曝光領域係分割成複數之曝 ’以藉由複數次之同步掃描進行掃描曝光； 控制機構係因應複數曝光範圍之各範圍而設 掃描方向。 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱 501184 A8 B8 C8 D8 六、申請專利範圍 U.如申請專利範圍第10項之掃描型曝光裝置，其中 ，前述基板之曝光領域係分割成複數之曝光範圍，以在掃 描方向，藉複數次之同步掃描進行掃描曝光； 控制機構係在曝光前述曝光範圍之各範圍時，將掃描 方向設定成自基板的端部離開側起，朝向端部側附近進行 掃描。 12•如申請專·瞧u蚊__光裝置，其中 ，前述基板之曝光領域係分_複數之曝光範圍，以在前 述掃描方向，藉複數次之同步掃插進行掃描曝光； 控纖構係控制成在曝光前述曝光範圍時，朝和設定 之掃描方向相反之方向移動，以檢測鄰接於曝光範圍之對 準標記。 (請先閱讀背面之注意事項再填寫本頁) · 訂- 參Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 501184 is8 __g___ __ VI. Patent Application ι · A scanning exposure method that scans and exposes the photomask and substrate on the substrate by scanning the photomask and substrate simultaneously along the scanning direction It is characterized in that the scanning direction of the aforementioned stage is set according to the movable range of the stage on which the substrate is placed and the scanning range moved by the stage when the exposed substrate is scanned. The exposure method, wherein the aforementioned scanning range includes: the acceleration range of the table, the synchronous stable range of the table to reduce the synchronous deviation of the mask and the substrate, the synchronous scanning range of the synchronous scanning mask and the table of the substrate, and the table. The deceleration range of the platform. 3. The scanning exposure method according to item 2 of the patent application range, wherein when the aforementioned synchronous scanning range scans the exposure pattern on a predetermined area of the substrate, the scanning direction of the aforementioned table is set according to the relationship between the synchronous scanning range and the movable range. . 4. The scanning exposure method of item 2 or item 3 of the patent application range, where 'is to set the scanning direction of the table according to the synchronous scanning range and the substrate exposure range of the scanning exposure pattern. 5. The scanning exposure method according to item 4 of the scope of patent application, wherein when the exposure range near the end of the table in the scanning direction is exposed, the scanning direction of the table is set according to the synchronous scanning range and exposure range. 6. The scanning exposure method according to item 2 of the patent application range, in which, when performing exposure in the aforementioned synchronous scanning range, the scanning direction of the table is set according to whether the acceleration and synchronization stable range are set within the movable range. ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 &gt; &lt; 297 mm) &quot; ^ (Please read the precautions on the back before filling in this page) Order · · i-line. 501184 A8 B8 C8 D8 VI. Patent application scope 7. A scanning exposure device that scans and exposes the pattern of the photomask to the exposure range of the substrate by scanning the photomask and the substrate synchronously along the scanning direction, which is characterized by: When the exposure range of the exposure range is scanned; and when the exposure range of the exposure substrate is scanned, the control mechanism of the exposure range is driven by the predetermined scanning range; the control mechanism sets the scanning direction of the exposure range based on the movable range and the predetermined scanning range. 8. If the scanning type exposure device according to item 7 of the scope of patent application, the stated scanning range includes: the acceleration range of the table, the stable synchronization range of the table to reduce the synchronization deviation between the mask and the substrate, and the synchronization. Scanning the synchronous scanning range of the photomask and the base of the substrate, and the deceleration range of the base; the control mechanism sets the scanning direction of the base in a manner that the synchronous scanning range and the exposure pattern of the substrate are substantially the same. 9 · If the scanning exposure device of item 8 of the scope of patent application is applied, which is moved relative to the mounting surface of the aforementioned table in the scanning direction and is equipped with ^ 'printed by the consumer consumption cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in the exposure range During the scanning exposure, the aforementioned control mechanism is arranged around one end of the movable range. Exposure light range ft -------------- (Please read the precautions on the back before filling out this page} -line · ί〇 · If you apply for the scope of the patent items 7, 8, or 9 Sweep type, in which the exposure area of the aforementioned substrate is divided into multiple exposures to perform scanning exposure by multiple simultaneous scanning; the control mechanism sets the scanning direction according to each range of the multiple exposure range. Table paper size applies China National Standard (CNS) A4 Specification (210 X 297 Public Love 501184 A8 B8 C8 D8 VI. Patent Application Range U. Scanning exposure device such as the 10th patent application range, in which the exposure area of the aforementioned substrate is divided into a plurality of The exposure range is to scan exposure by multiple simultaneous scanning in the scanning direction. The control mechanism sets the scanning direction from the end of the substrate away from the side to the end of the substrate when exposing each range of the aforementioned exposure range. Scanning nearby. 12 • If you apply for a special look at the mosquito __light device, the exposure area of the aforementioned substrate is divided into multiple exposure ranges to borrow multiple simultaneous scans in the aforementioned scanning direction. Insert the scanning exposure; The fiber control system is controlled to move in the opposite direction to the set scanning direction when the aforementioned exposure range is exposed to detect the alignment mark adjacent to the exposure range. (Please read the precautions on the back before filling (This page) · Order-Reference
TW090118950A 2000-08-03 2001-08-03 Scanning exposure method and scanning type exposure device TW501184B (en)

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