505975 A7 B7 五、發明說明（ [技術領域] 本發明係關於透過投影光學系統將光罩之圖案像投影 於基板的曝光裝置，特別是關於具備用以檢測相對投影光 學系統成像位置之基板之資訊的位置測量裝置，亦即具備 所謂自動聚焦系統的曝光裝置。 [習知技術] 液晶顯示裝置或LSI等之製造所使用之投影曝光裝置 ，隨著轉印之圖案的微細化，對高解析度化之要求日漸提 昇。投影曝光裝置所搭載之投影光學系統的解析能力，如 眾所週知之瑞利(Rayleigh)公式，能以R=KX λ/NA之關係 加以表示。其中，R爲投影光學系統之解析能力，λ爲曝 光用光之波長，ΝΑ爲投影光學系統之開口數(aperture)，Κ 爲以光阻之解析能力外之製程所決定之常數。 以往，爲提高投影光學系統的解析能力，係採用加大 投影光學系統之NA的方式，但另一方面，其焦點深度卻 因NA2而變淺，造成無法獲得足夠之焦點深度。是故，近 來之曝光裝置，例如具有能轉印寬〇.25|1111之電路圖案能力 的裝置，類赚賴_以下，丽關案之玻璃基板 寺基板’ ’顏正献賴軸賴職位於投影光 學系統之焦點位置(焦點深度）。 此種之投影曝光裝置，坡瑪_板係麵基板保持具， 裝載於可移_光學紐0軸方向(z方向)及垂直於 光軸之二方向(X，Y方向)_—台上。然後，於曝光之 前當定位玻_嫌Z方向❻，讓_顚上之玻璃 Τ、度適用中國國家標準（CNS)A4規格（210 (請先閲讀背面之注意事項再填寫本頁) · I--i 丨丨訂·--------一 505975 A7 _____B7__ 五、發明說明（户） 基板，自具有非垂直之任意角度的傾斜方向將焦點檢測用 之檢測光射至曝光照射區域(曝光區域)之一點(或數點），將 來自镇璃基板的反射光引導至作爲受光部的檢測器，所謂 以斜射入反射型之自動聚焦系統（位置檢測裝置）聚焦於玻 璃基板表面來檢測焦點位置，求出光軸方向之玻璃基板相 對投影光學系的高度(位置資訊）。505975 A7 B7 V. Description of the Invention ([Technical Field] The present invention relates to an exposure device for projecting a pattern image of a photomask onto a substrate through a projection optical system, and in particular, information about a substrate having a position for detecting the imaging position of the relative projection optical system Position measuring device, that is, an exposure device equipped with a so-called autofocus system. [Known Technology] Projection exposure devices used in the manufacture of liquid crystal display devices or LSIs, etc., have a high resolution as the pattern transferred is miniaturized. The requirements for transformation are increasing. The analytical capability of the projection optical system mounted on the projection exposure device, such as the well-known Rayleigh formula, can be expressed in the relationship of R = KX λ / NA. Among them, R is the projection optical system. Resolution, λ is the wavelength of exposure light, NA is the aperture of the projection optical system, and κ is a constant determined by a process other than the resolution of the photoresist. In the past, in order to improve the resolution of the projection optical system, It is a method of increasing the NA of the projection optical system, but on the other hand, the depth of focus is shallow due to NA2, which makes it impossible to obtain Enough depth of focus. Therefore, recent exposure devices, such as those with the ability to transfer circuit patterns with a width of 0.25 | 1111, are similar to the following. The glass substrate temple substrate of the Liguan case is' Yan Zhengxian Lai Axis Lai's position is the focal position (focus depth) of the projection optical system. This type of projection exposure device, Perma_Board surface substrate holder, is mounted in the movable_optical button 0 axis direction (z direction) and perpendicular to the optical axis The second direction (X, Y direction) _ — on the stage. Then, before the exposure, the glass _ suspected Z direction 定位, so that the glass T, degree on _ 适用 applies the Chinese National Standard (CNS) A4 specification (210 (please (Please read the notes on the back before filling in this page) · I--i 丨 丨 Order · -------- One 505975 A7 _____B7__ V. Description of the Invention (household) The substrate has its own non-vertical tilt at any angle The detection light for focus detection is directed to one point (or several points) of the exposure irradiation area (exposure area), and the reflected light from the glass substrate is guided to the detector as the light receiving part. Focusing system (position detection device) focuses on Glass substrate surface to detect the focus position of the optical axis direction to obtain a glass substrate with a height of a projection optical system (location).
[本發明欲解決之課題] V 然而，上述習知之曝光裝置，存在如下之問題。 近來，上述液晶顯示裝置，就畫面的易視性而進展到 大畫面化，且更要求設計規則之微細化（高畫質化），以提 昇量產率而提高生產性。因此，爲了在一片玻璃基板上取 得更多的元件，而朝玻瑀基板之大型化發展。 如前所述，隨著玻璃基板的大型化而擴大了曝光範圍 ，若仍如習知技術般，測量曝光照射區域的一點（或數點) 之代表値來決定玻璃基板之焦點位置的話，則包含玻璃基 板本身之彎曲或凹凸之厚度容許度等的外在因素、或自動 聚焦系統的可靠度（檢測誤差)等的內在因素，進一步的因 玻璃基板之傾斜，而使曝光照射區域內之非測量位置無法 進入焦點深度內之虞。特別是，如上述般地隨著投影光學 系統之解析能力的提昇使焦點深度變淺時，會有非測量位 置自焦點深度偏離的可能性變大的問題。此外，自焦點深 度偏離且曝光的部分，其圖案難以正確地轉印，而有導致 不良品之產生的不良情況。 作爲解決此種不良情形之方法，雖曾考量藉由移動用 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)[Problems to be Solved by the Invention] V However, the conventional exposure apparatus described above has the following problems. Recently, the above-mentioned liquid crystal display devices have progressed to large screens with regard to the ease of viewing the screens, and the miniaturization (higher image quality) of design rules have been required to increase the productivity and improve productivity. Therefore, in order to obtain more elements on one glass substrate, the size of the glass substrate is increasing. As mentioned above, the exposure range is increased with the increase in the size of the glass substrate. If, as is the case with conventional techniques, a representative point (or several points) of the exposure irradiation area is measured to determine the focal position of the glass substrate, Including external factors such as the thickness tolerance of the glass substrate itself or the thickness of the unevenness, or internal factors such as the reliability (detection error) of the autofocus system, and further the inclination of the glass substrate makes the non-existence in the exposure area irradiated. The measurement position may not enter the depth of focus. In particular, when the depth of focus becomes shallower as the resolution of the projection optical system improves as described above, there is a problem that the possibility of the non-measurement position deviating from the depth of focus becomes larger. In addition, it is difficult to correctly transfer the pattern of the part with the out-of-focus depth and the exposed part, which may cause defects. As a solution to this problem, although it has been considered that 4 paper sizes for mobile use are applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
-1· I ί I 訂·--------- 505975 A7 _____g7 一 五、發明說明（》） 來保持玻璃基板的基板載台，據以在曝光照射區域之複數 處檢測焦點位置的方法，但此時，基板載台的移動極爲費 時而導致效率降低的問題，且因基板載台之移動而受到載 台的搖動或傾斜等的影響，亦影響到焦點的檢測。 本發明有鑑於上述問題點，其目的在提供一種不致降 低效率’能高精度的檢測基板之焦點方向位置的曝光裝置 Ο [用以解決課題之手段] 爲達成上述目的，本發明係採用對應顯示實施形態之 第1圖至第4圖的如下構成。 本發明之曝光裝置，具備將圖案投影於基板(P)之投影 光學系統(PL)，與藉由檢測光來檢測相對於投影光學系統 (PL)成像位置之基板(P)之位置資訊的位置檢測裝置（11，12) ，其特徵在於：前述位置檢測裝置（11，12)，具有將基板(P) 之第1位置(Pl，P3)所反射的檢測光，朝離開第1位置(P1， P3)之第2位置(P2, P4)加以送光的送光部（11B，12B) ’以及 將第1位置(Pl，P3)與第2位置(P2, P4)所反射的檢測光加 以受光的受光部(33)，並設置複數個位置檢測裝置（11，I2) 〇 承上所述，本發明之曝光裝置，由於接收來自基板(P) 上之第1位置(Pl，P3)及第2位置(P2, P4)所反射的檢測光 ，來檢測基板(P)之位置資訊，因此不僅能提升分解能力’ 亦能藉平均化效果提升測量値之精度。又，由於能獲得複 數個相對此重成像位置之基板(p)的位置資訊’因此能藉統 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)-1 · ί I order · --------- 505975 A7 _____g7 One or five, description of the invention (") to hold the substrate stage of the glass substrate, thereby detecting the focus position at a plurality of positions in the exposure irradiation area Method, but at this time, the movement of the substrate stage is extremely time-consuming and leads to a problem of reduced efficiency, and the movement of the substrate stage is affected by the shaking or tilting of the stage, which also affects the focus detection. In view of the above problems, the present invention aims to provide an exposure device that can detect the position of the focus direction of a substrate with high accuracy without reducing the efficiency. [Means to solve the problem] To achieve the above object, the present invention adopts a corresponding display The first to fourth embodiments of the embodiment are structured as follows. An exposure apparatus of the present invention includes a projection optical system (PL) for projecting a pattern on a substrate (P), and a position for detecting position information of the substrate (P) relative to the imaging position of the projection optical system (PL) by detecting light. The detection device (11, 12) is characterized in that the aforementioned position detection device (11, 12) has a detection light reflected by the first position (Pl, P3) of the substrate (P) toward the first position (P1) (P3, P3) at the second position (P2, P4) to send light (11B, 12B) 'and the detection light reflected at the first position (Pl, P3) and the second position (P2, P4). The light receiving unit (33) for receiving light is provided with a plurality of position detection devices (11, I2). As mentioned above, the exposure device of the present invention receives the first position (Pl, P3) and the first position on the substrate (P). The detection light reflected at the second position (P2, P4) is used to detect the position information of the substrate (P). Therefore, it can not only improve the resolution ability, but also improve the accuracy of the measurement by the averaging effect. In addition, because the position information of multiple substrates (p) relative to this re-imaging position can be obtained, 5 paper sizes can be used to comply with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the back first) (Notes for filling in this page)
505975 A7 __B7_____— 五、發明說明（f ) 計處理，來排除因基板(P)表面傷痕或附著異物等部分急遽 之凹凸造成之影響，或因基板(P)之造成之影響。再者’由 於不需移動基板(P)即能於第1位置(pl，P3>及第2位置(P2, P4)反射檢測光，因此不需移動載台’而能剪止效率降低。 又，本發明之曝光裝置，具備將圖案投影於基板(？)之 投影光學系統(PL)，與藉由檢測光來檢測相對於投影光學 系統(PL)成像位置之基板(P)之位置資訊的位置檢測裝置(3) ，其特徵在於：前述位置檢測裝置(3)，具有檢測投影光學 系統(PL)之光軸正下方之基板(P)之位置資訊的第1檢測裝 置（10)，以及檢測偏離投影光學系統(PL)之光軸正下方之 基板(P)之位置資訊的第2檢測裝置（11，12)。 承上所述，本發明之曝光裝置由於能獲得光軸正下 方之基板(P)的位置資訊與偏離光軸正下方之基板(P)的位置 資訊，因此能依據計算出平均値等之此等複數個資訊，高 精度的檢測基板(P)之焦點方向位置。又，以第1檢測裝置 (10)之檢測結果爲基準，將基板(P)對正於焦點位置中心， 或藉由偏差(Offset)管理，而能自第1檢測裝置（10)之檢測 値與第2檢測裝置（11，12)之檢測値的差，對基板(P)進行最 佳之光軸方向的對位。 [圖式之簡單說明] 第1圖爲本發明之實施形態之示意圖，具有自動聚焦 機構之曝光裝置之槪略構成圖。 第2圖爲表示相對於玻璃基板之自動聚焦機構之配置 之俯視圖。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ·丨丨丨丨丨丨丨訂·丨丨丨丨丨丨I* *5^». 505975 A7 _B7_ 五、發明說明（t ) 第3圖爲構成自動聚焦機構之自動聚焦系統之槪略構 成圖。 第4圖爲表示自動聚焦系統之其他形態之俯視圖。 第5圖係顯示液晶顯示面板之製造步驟例的流程圖。 [符號說明] B2, B3 檢測光 Μ 光罩 Ρ 玻璃基板(基板） PL 投射光學系統 PI, P3 第1位置 P2, P4 第2位置 1 曝光裝置 3 自動聚焦機構(位置檢測裝置） 10 自動聚焦系統(第1檢測裝置） 11 自動聚焦系統(第2檢測裝置、第 檢測裝置） 1位置 12 自動聚焦系統(第2檢測裝置、第 檢測裝置） 2位置 11B，12B 送光系統(送光部） 33 受光部 [發明之實施形態] 以下，參圖第1圖至第4圖說明本發明之曝光裝置之 實施形態。此處，作爲基板係採用液晶顯示面板之製造時 所使用之方形的玻璃基板，在將光罩上形成之電路圖案轉 Ί (請先閱讀背面之注意事項再填寫本頁) ---I I I ---訂·-----！· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 505975 A7 _ B7 _ 五、發明說明（6 ) 印於玻璃基板上之前，先測量玻璃基板之光軸方向位置者 爲例來進行說明。 第1圖中，曝光裝置1，大致具備：將來自光源之曝 光光照射於光罩(標線片)Μ的照明光學系統(未圖示），保持 光罩Μ而能相對曝光光之光軸移動於垂直方向(X，Υ)的光 罩載台(未圖示），將被照明之光罩Μ的圖案投影於玻璃基 板(基板)Ρ上的投影光學系統(PL)，保持玻璃基板？而移動 的基板載台2’以及斜射入反射型之自動聚焦機構(位置檢 測類)3。 光罩載台，能於上述X，Υ方向移動自如，在光罩載台 上的端緣，於正交方向分別設有移動鏡（未圖示）。在各移 動鏡上則對向配置有雷射干涉器（未圖示）。此等雷射干涉 器係對各移動鏡射出雷射光，藉測量與該移動鏡之間的距 離，而能檢測光罩載台之X方向及Υ方向的位置。然後， 藉雷射干涉器之輸出監視光罩載台之位置，藉進行伺服控 制，來將光罩載台(亦即標線片R)移動至期望之位置。 基板載台2，係由在基板載台4上移動於Υ方向的Υ 載台5，在Υ載台5上移動於X方向的X載台6，搭載於 X載台6上且移動於光軸方向(Ζ方向）、作爲Ζ載台的平 台7，以及載置於平台7上、藉真空吸附方式等吸附保持 玻璃基板Ρ的基板保持具8所構成。 在平台7上的端緣，於正交方向分別設有移動鏡9Χ， 9Υ。在各移動鏡9Χ，9Υ上，對向配置有雷射干涉器(未圖 示）。此等雷射干涉器，分別移動鏡9Χ，9Υ射出雷射光， 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之沒意事項再填寫本頁) 訂---------線 505975 ___B7____ 五、發明說明（7 ) 藉測量與該移動鏡9X，9Y之間的距離，而能檢測平台7之 X方向及Y方向的位置。然後，藉雷射干涉器之輸出監視 平台7之位置，藉進行伺服控制，來將平台7(亦即玻璃基 板P)移動至期望之位置。 自動聚焦機構’3，係具有對玻璃基板P上以斜入射方 式照射檢測光，藉檢測玻璃基板P上所反射的檢測光，來 對玻璃基板P上之焦點位置進行測量及解析的功能者，由 檢測投影光學系統PL之光軸正下方之Z方向位置(位置資 訊)AP的自動聚焦系統(第1檢測裝置）10，檢測偏離投影光 學系統PL之光軸正下方之Z方向位置的二個自動聚焦系 統(第2檢測裝置）11，12(第1圖中省略自動聚焦系統12)， 以及運算裝置13所構成。 如第2圖所示，自動聚焦系統10，係由發出狹縫狀的 檢測光B1的發光部14，反射檢測光B1的反射鏡15〜18 ，及接收玻璃基板P所反射之檢測光B1的受光部19所構 成，自發光部14發出之檢測光B1，以反射鏡15, 16加以 反射，沿玻璃基板P之對角方向引導至投影光學系統PL 之光軸正下方的玻璃基板P上。然後，以玻璃基板P反射 之檢測光B1，進一步以反射鏡17, 18加以反射而引導至受. 光部19。受光部19所接收之檢測光B1經A/D轉換後， 輸出至運算裝置13。又，雖未圖示，但在這些反射鏡之間 ，設有用易將被反射而擴大之檢測裝光B1加以聚光的中 繼透鏡。 如第3圖所示，自動聚焦系統(第丨位置檢測裝置）ιι 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱)' 一 (請先閱讀背面之注意事項再填寫本頁) 訂------ ——線一 505975 A7 ___B7____ 五、發明說明（？） ，係由發光系統11A、送光系統(送光部）11B、及受光系統 11C所構成。發光系統’係用以將狹縫狀檢測光B2引 導至偏離投影光學係統PL之光軸正下方之玻璃基板P上 之第1位置P1者，係由發出檢測光的發光部20 ’反射 檢測光B2、俯視與檢測光B1平行(參閱第2圖）且相對玻 璃基板P以斜入射方式引導至第1位置P1的反射鏡21，22 ，以及將檢測光B2加以聚光使之成像於玻璃基板P上的 中繼透鏡29所構成。 送光系統11B，係將於玻璃基板P上之第1位置P1所 反射的檢測光B2，送至離開第1位置P1之玻璃基板P上 之第2位置P2者，係爲由反射鏡23〜26、及中繼透鏡30, 31所構成。反射鏡23〜26，係反射檢測光B2以送至位於 第1位置P1之相反側的第2位置P2(第1位置P1與第2 位置P2係包挾投影光學系統PL之光軸AX)。以反射鏡23 反射之檢測光B2，以中繼透鏡30加以聚光。被聚光之檢 測光B2，於反射過程中，以中繼透鏡30之焦點距離來成 像，雖再度放大但被中繼透鏡31加以聚光，而成像於玻璃 基板P上。 受光系統11C，係接收玻璃基板P上之第1位置P1， 第2位置P2所反射的檢測光，係由反射鏡27, 28、中繼透 鏡32、及受光部33所構成。M61第2位置P2反射的檢測 光B2，被反射鏡27反射後，以中鏡透鏡32加以聚光，透 過反射鏡28在受光部33成像。受光部33，對所接收之檢 測光B2進行A/D轉換後，輸出至運算裝置.13。 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) i 11 -----^------1 — 505975 A7 ________B7____ 五、發明說明（7 ) 自動聚焦系統(第2位置檢測裝置）1J2，系具有發光系 統12A、送光系統(送光部）12B、及受光系統12C，由於此 等系統與自動聚焦系統11之發光系統11A、送光系統iiB 、送光系統11C之構成相同，故在第3圓中僅顯示符號， 省略其說明。 又，自動聚焦系統12之發光系統12A，其發出之狹縫 狀檢測光B3係沿俯視與檢測光Bl，B2大致成正交之方向 ，導向偏離投光學系統PL之光軸正下方之玻璃基板P上 的第1位置P3。接著，於玻璃基板P上之第1位置P3反 射的檢測光B3，藉由送光系統12B，送至位於第1位置P 之相反側的第2位置P4(第1位置P3與第2位置P4係包 挾投影光學系統PL之光軸AX)。於第2位置P4反射之檢 測光B3，以受光系統12C加以受光，經A/D轉換後，輸 出至運算裝置13。 運算裝置13，根據受光部19, 33所接收的檢測光B1 〜B3，分別計算出反射各檢測光之玻璃基板P上之Z方向 (焦點方向）的高度(位置資訊）。具體而言，射入受光部19, 33之檢測光，分別被振動構件(未圖示)反射，該振動構件 係繞與檢測光正交之軸線旋轉振動。因此，以受光部19, 33揪收之檢測光的投影像位置，會根據振動構件之振動而 變化。又，當玻璃基板P之Z方向位置變化時，受光部 19, 33所接收之檢測光之投影像位置亦變化。因此，運算 裝置13，係分別以振動構件之加振信號來同步檢波受光部 19, 33之輸出信號，而能對各自動聚焦系統10〜12，求得 η 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) —------訂-------—線痛 505975 A7 ___B7 ____— 一 五、發明說明（,。） 玻璃基板P之焦點方向高度。 接著，說明上述構成之曝光裝置，將玻璃基板P對位 於投影光學系統PL之焦點位置的順序。又，此處假設上 述第1位置Pl，P3、第2位置P2, P4，係設定在玻璃基板 P上之曝光照射區域週邊附近。 於自動聚焦系統10中發出之檢測光B1，於投影光學 系統PL之光軸正下方之玻璃基板P上反射後，以受光部 19加以受光，經A/D轉換輸出至運算裝置13。於自動聚 焦系統11中發出之檢測光B2，於玻璃基板P上之第1位 置P1反射，且以送光系統11B送出，而在玻璃基板P上 之第2位置P2再度反射後，以受光部33加以受光，經 A/D轉換輸出至運算裝置13。 同樣地，於自動聚焦系統12中發出之檢測光B3，於 玻璃基板P上之第1位置P3反射，且以光系統12B送出 ，而在玻璃基板P上之第2位置P4再度反射後，以受光 部33加以受光，經A/D轉換而輸出至運算裝置13。 運算裝置13，根據受光部19, 33所接收之檢測光B1 〜B3的相關輸出信號、與自動聚焦系統中振動構件之加振 信號，就每一檢測光分別計算出玻璃基板P之焦點方向高 度Zl，Z2, Z3。接著，運算裝置13，使用所得之高度Z1〜 Z3進行平均處理或最小平方等之統計處理，來設定玻璃基 板P之聚焦位置。之後，使平台7移動於Z方向，以將玻 璃基板P之上面配置於所設定的聚焦位置。 以此方式，對已定位出焦點方向高度之玻璃基板P， 12 (請先閱讀背面之注意事項再填寫本頁)505975 A7 __B7 _____— 5. Description of the invention (f) Design treatment to exclude the impact caused by the sharp unevenness on the surface of the substrate (P) or the adhesion of foreign matter, or the impact caused by the substrate (P). Furthermore, since the detection light can be reflected at the first position (pl, P3> and the second position (P2, P4) without moving the substrate (P), it is not necessary to move the stage, and the clipping efficiency can be reduced. The exposure device of the present invention includes a projection optical system (PL) for projecting a pattern on a substrate (?), And position information of the substrate (P) relative to the imaging position of the projection optical system (PL) by detecting light. A position detection device (3), characterized in that the aforementioned position detection device (3) includes a first detection device (10) that detects position information of a substrate (P) directly below an optical axis of a projection optical system (PL), and The second detection device (11, 12) that detects the position information of the substrate (P) directly below the optical axis of the projection optical system (PL). As mentioned above, the exposure device of the present invention can obtain The position information of the substrate (P) and the position information of the substrate (P) directly below the optical axis can be used to calculate the average position of the plurality of pieces of information to accurately detect the focus position of the substrate (P). In addition, based on the detection result of the first detection device (10), the substrate (P) It is located at the center of the focus position, or by the offset (Offset) management, the difference between the detection 値 of the first detection device (10) and the detection 2 of the second detection device (11, 12) can be performed on the substrate (P). Optimal alignment in the direction of the optical axis. [Simplified description of the drawing] FIG. 1 is a schematic diagram of an embodiment of the present invention, and a schematic configuration diagram of an exposure device having an autofocus mechanism. FIG. Top view of the configuration of the substrate's autofocus mechanism. 6 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) · 丨 丨 丨 丨 丨丨 Order 丨 丨 丨 丨 丨 丨 I * * 5 ^ ». 505975 A7 _B7_ V. Description of the Invention (t) Figure 3 is a schematic diagram of an automatic focusing system that constitutes an automatic focusing mechanism. Figure 4 is a diagram showing automatic Top view of other forms of focusing system. Figure 5 is a flowchart showing an example of the manufacturing steps of a liquid crystal display panel. [Symbols] B2, B3 Detection light M Photomask P Glass substrate (substrate) PL Projection optical system PI, P3 1 position P2, P4 2nd position 1 exposure device 3 autofocus mechanism (position detection device) 10 autofocus system (first detection device) 11 autofocus system (second detection device, second detection device) 1 position 12 autofocus system (second detection device, second detection device) Device) 2 position 11B, 12B light transmitting system (light transmitting unit) 33 light receiving unit [embodiment of the invention] Hereinafter, an embodiment of the exposure apparatus of the present invention will be described with reference to FIGS. 1 to 4. Here, as a substrate It is a square glass substrate used in the manufacture of liquid crystal display panels, and the circuit pattern formed on the photomask is turned (please read the precautions on the back before filling this page) --- III --- order ·- ----! · This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 505975 A7 _ B7 _ V. Description of the invention (6) Before printing on the glass substrate, measure the position of the optical axis direction of the glass substrate as follows: An example is used for explanation. In FIG. 1, the exposure device 1 generally includes an illumination optical system (not shown) that irradiates exposure light from a light source to a mask (reticle) M, and maintains the mask M so as to be able to face the optical axis of the exposure light. A projection stage (not shown) that moves in a vertical direction (X, Υ), and projects the pattern of the illuminated mask M onto a projection optical system (PL) on a glass substrate (substrate) P to hold the glass substrate? The moving substrate stage 2 'and the oblique incident reflection type autofocus mechanism (position detection type) 3 are also provided. The photomask stage can move freely in the X and Υ directions described above. Moving mirrors (not shown) are provided at the end edges of the photomask stage in orthogonal directions. A laser interferometer (not shown) is disposed opposite each moving mirror. These laser interferometers emit laser light to each of the moving mirrors, and can measure the positions in the X direction and the Υ direction of the mask stage by measuring the distance from the moving mirrors. Then, the position of the mask stage is monitored by the output of the laser interferometer, and the mask stage (that is, the reticle R) is moved to a desired position by performing servo control. The substrate stage 2 is a cymbal stage 5 that moves on the substrate stage 4 in the 载 direction, an X stage 6 that moves on the cymbal stage 5 in the X direction, is mounted on the X stage 6 and moves on light. An axial direction (Z direction), a stage 7 serving as a Z stage, and a substrate holder 8 which is placed on the stage 7 and holds and holds the glass substrate P by a vacuum suction method or the like. On the edge of the platform 7, moving mirrors 9X and 9Υ are respectively provided in orthogonal directions. A laser interferometer (not shown) is disposed opposite each of the moving mirrors 9X and 9Y. These laser interferometers, respectively, move the mirror 9 ×, 9Υ to emit laser light. 8 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm). (Please read the unintentional matter on the back before filling in this page. ) Order --------- line 505975 _B7____ 5. Description of the invention (7) By measuring the distance between the moving mirror 9X, 9Y, the position of the X direction and Y direction of the platform 7 can be detected. Then, the position of the stage 7 is monitored by the output of the laser interferometer, and the stage 7 (i.e., the glass substrate P) is moved to a desired position by performing servo control. The autofocus mechanism '3 has a function of irradiating detection light on the glass substrate P by oblique incidence, and measuring and analyzing the focal position on the glass substrate P by detecting the detection light reflected on the glass substrate P. An autofocus system (first detection device) 10 that detects a Z-direction position (position information) directly below the optical axis of the projection optical system PL detects two deviations from the Z-direction position directly below the optical axis of the projection optical system PL An autofocus system (second detection device) 11, 12 (the autofocus system 12 is omitted in the first figure), and a computing device 13 are configured. As shown in FIG. 2, the autofocus system 10 is composed of a light-emitting portion 14 that emits a slit-shaped detection light B1, mirrors 15 to 18 that reflect the detection light B1, and a receiver that receives the detection light B1 reflected by the glass substrate P. The light receiving unit 19 is configured to detect the light B1 emitted from the light emitting unit 14 and is reflected by the mirrors 15 and 16 and is guided to the glass substrate P directly below the optical axis of the projection optical system PL along the diagonal direction of the glass substrate P. Then, the detection light B1 reflected by the glass substrate P is further reflected by the mirrors 17, 18 and guided to the light receiving unit 19. After the detection light B1 received by the light receiving unit 19 is A / D converted, it is output to the computing device 13. Although not shown in the drawings, a relay lens is provided between these reflecting mirrors to collect light with the detection light B1 which is easily enlarged and reflected. As shown in Figure 3, the autofocus system (the position detection device) ιι 9 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) '1 (Please read the precautions on the back before filling (This page) Order ------ —— Line 1 505975 A7 ___B7____ 5. The description of the invention (?) Is composed of a light emitting system 11A, a light transmitting system (light transmitting unit) 11B, and a light receiving system 11C. The "light-emitting system" is used to guide the slit-shaped detection light B2 to the first position P1 on the glass substrate P that is offset from the optical axis of the projection optical system PL directly, and the detection light is reflected by the light-emitting portion 20 'that emits the detection light. B2. Mirrors 21, 22 which are parallel to the detection light B1 (see FIG. 2) and guided to the first position P1 at an oblique incidence with respect to the glass substrate P, and collect the detection light B2 to form an image on the glass substrate It is constituted by a relay lens 29 on P. The light transmitting system 11B is the detection light B2 reflected at the first position P1 on the glass substrate P and sent to the second position P2 on the glass substrate P which is away from the first position P1. 26, and relay lenses 30, 31. The reflecting mirrors 23 to 26 reflect the detection light B2 to be sent to the second position P2 on the opposite side of the first position P1 (the first position P1 and the second position P2 include the optical axis AX of the projection optical system PL). The detection light B2 reflected by the reflecting mirror 23 is focused by the relay lens 30. The condensed detection light B2 is imaged at the focal distance of the relay lens 30 during the reflection process. Although it is magnified again, it is condensed by the relay lens 31 and imaged on the glass substrate P. The light-receiving system 11C receives the detection light reflected from the first position P1 and the second position P2 on the glass substrate P, and is composed of the reflection mirrors 27, 28, the relay lens 32, and the light-receiving unit 33. The detection light B2 reflected at the second position P2 of M61 is reflected by the reflecting mirror 27, and is collected by the middle mirror lens 32, and passes through the reflecting mirror 28 to form an image on the light receiving unit 33. The light receiving unit 33 performs A / D conversion on the received detection light B2 and outputs it to the computing device .13. 10 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) i 11 ----- ^ ------ 1 — 505975 A7 ________B7____ 5. Description of the invention (7) Autofocus system (second position detection device) 1J2, which has a light emitting system 12A, a light transmitting system (light transmitting unit) 12B, and a light receiving system 12C. Due to these systems and the autofocus system The structures of the light-emitting system 11A, the light-transmitting system iiB, and the light-transmitting system 11C of 11 are the same, so only symbols are displayed in the third circle, and descriptions thereof are omitted. In addition, the slit-shaped detection light B3 emitted by the light-emitting system 12A of the autofocus system 12 is guided in a direction substantially orthogonal to the detection lights B1 and B2 in a plan view, and is guided away from the glass substrate directly below the optical axis of the projection optical system PL. The first position P3 on P. Next, the detection light B3 reflected at the first position P3 on the glass substrate P is sent to the second position P4 (the first position P3 and the second position P4) on the opposite side of the first position P by the light transmitting system 12B. The optical axis AX of the projection optical system PL is included. The detection light B3 reflected at the second position P4 is received by the light receiving system 12C, and after being A / D converted, it is output to the computing device 13. The computing device 13 calculates the height (position information) in the Z direction (focus direction) on the glass substrate P that reflects each detection light, based on the detection lights B1 to B3 received by the light receiving units 19, 33. Specifically, the detection light that has entered the light-receiving sections 19 and 33 is reflected by a vibration member (not shown), and the vibration member rotates and vibrates about an axis orthogonal to the detection light. Therefore, the projected image position of the detection light received by the light receiving units 19 and 33 varies depending on the vibration of the vibration member. When the position in the Z direction of the glass substrate P is changed, the projected image position of the detection light received by the light receiving units 19 and 33 also changes. Therefore, the computing device 13 uses the vibration signals of the vibrating members to synchronize the output signals of the light receiving units 19 and 33, and can obtain η for each of the autofocus systems 10 ~ 12. The paper size is applicable to the Chinese national standard (CNS ) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) ---------- Order --------- Line pain 505975 A7 ___B7 ____— Invention Explanation (,.) The height of the focus direction of the glass substrate P. Next, a description will be given of a procedure in which the exposure apparatus having the above-mentioned configuration positions the glass substrate P at the focal position of the projection optical system PL. It is assumed here that the first positions P1, P3, and the second positions P2, P4 are set in the vicinity of the exposure irradiation area on the glass substrate P. The detection light B1 emitted from the autofocus system 10 is reflected on the glass substrate P directly below the optical axis of the projection optical system PL, and then received by the light receiving unit 19, and is outputted to the computing device 13 through A / D conversion. The detection light B2 emitted from the autofocus system 11 is reflected at the first position P1 on the glass substrate P, and is sent out by the light transmitting system 11B. After being reflected again at the second position P2 on the glass substrate P, the light receiving portion 33 receives light, and outputs it to the computing device 13 through A / D conversion. Similarly, the detection light B3 emitted from the autofocus system 12 is reflected at the first position P3 on the glass substrate P and sent out by the light system 12B. After the second position P4 on the glass substrate P is reflected again, The light receiving unit 33 receives the light, outputs it to the computing device 13 through A / D conversion. The computing device 13 calculates the focus direction height of the glass substrate P for each detection light based on the relevant output signals of the detection lights B1 to B3 received by the light receiving units 19 and 33 and the vibration signal of the vibration member in the autofocus system. Zl, Z2, Z3. Next, the computing device 13 uses the obtained heights Z1 to Z3 to perform statistical processing such as average processing or least squares to set the focus position of the glass substrate P. Thereafter, the stage 7 is moved in the Z direction to arrange the upper surface of the glass substrate P at a set focus position. In this way, for the glass substrate P, 12 where the height in the focus direction has been located (Please read the precautions on the back before filling this page)
-----訂--------*線J 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 505975 ------- A7 ____ B7 _____ 五、發明說明（，丨） 透過投影光學系統將光罩Μ上所形成之圖案予以曝光。進 一步的，根據雷射干涉器之檢測結果，以步進重複(step & repeat)方式移動Y載台5、X載台6，據以將光罩Μ之圖 案複數曝光形成於玻璃基板Ρ上。 本實施形態之曝光裝置，由於自動聚焦系統u，12之 檢測光B2, B3係在玻璃基板P上經過複數次的反射，因此 於測定範圍內之測定値藉反射數次之平均化處理而提昇分 解能力，能更正確地求出玻璃基板P之焦點方向位置。因 此，即使隨著投影光學系統PL之解析能力的提昇而使焦 點深度變淺，亦能將曝光面自焦點深度偏離的可能性抑制 於最低。又，與對玻璃基板P上之位置P1〜P4個別設置 位置檢測裝置之情形相，由於能減少振動構件等驅動機構 的設置數目，因此即使是在僅能確保狹窄空間之情形下， 亦能容易且正確地求出焦點方向之位置。 此外，本實施形態，由於係設置二組複數次反射檢測 光的自動聚焦系統，而能獲得複數個玻璃基板P之高度， 因此能使用各檢測値進行統計處理，來排除因玻璃基板P 上之傷痕或異物等的之急遽的凹凸造成的影響，實施更高 精度之焦點位置測量。 此外，由於高度Z2, Z3，係分別自複數位置之反射結 果所得，因此亦能使用反射位置間之距離來計算出玻璃基 板P的傾斜度。特別是，例如當投影光學系統PL之光軸 正下方之位置與第1位置P1及第2位置P2，係位於玻璃 基板P上之傾斜軸上，其結果爲Z1=Z2，两無法算出傾斜 13 ^紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公爱) ' " " <請先閱讀背面之注意事項再填寫本頁) 摩----------訂---------線一 r 505975 —— A7 __B7 ___ 五、發明說明（A ) 度時，亦能根據高度Z3之値求出傾斜度。又，若分別算 出高度Z1〜Z3以求出此等之相對位置關係，以其中之一 爲基準値來對準於投影光學系統PL之焦點位置中心，或 是以距離該中心位置之變位量作爲偏差量保持於裝置內部 的話，則對基準値以外之高度，亦能直接求得距離焦點中 心的變位量。 進一步的，本實施形態之曝光裝置，係藉由自動聚焦 系統10來檢測投影光學系統PL之光軸正下方之玻璃基板 P的高度，並以自動聚焦系統11，12來檢測偏離光軸正下 方之玻璃基板P的高度，因此能求出實際地以曝光於玻璃 基板P上光軸正下方之位置作爲基準之曝光照射區域內的 其他高度，來實施在曝光照射區域內最佳的聚焦位置之調 整。特別是本實施形態中，係以檢測光B2, B3大致正交之 方式配置自動聚焦系統11，12,故能有效率地測量矩形之 曝光照射區域內的周邊部分。此外，由於係如上述般’不 移動基板載台2而能獲得複數之位置資訊，因此能防範因 載台移動之費時而降低處理能率之事態於未然。 又，上述實施形態中，雖係採用了設置二組使檢測光 產生反射之自動聚焦系統的構成，但設置三組以上之構成 亦可。此外，雖採用了自動聚焦系統11，12之檢測光在玻 璃基板P上反射二次之構成，但只要是二次以上即不限於 $，亦可如第4圖所示，將作爲送光部的二個反射鏡35, 35以包挾玻璃基板P之方式對向配賢，自發光部20發出 之檢測光於玻璃基板P上之位置P1〜P4進行四次反射後 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) -------—訂------- 1!% •r · 505975 A7 __E7___ 五、發明說明（G ) ，以受光部33加以受光。此時，因增加反射次數而能更爲 提昇分解能力。 又，上述實施形態，雖採用了以二個自動聚焦系統 11，12來檢測位置P1〜P4之焦點方向高度的構成，但例如 設置四個與自動聚焦系統1〇相同之裝置，以各個自動聚焦 系統分別檢測各位置之高度的構成亦可。此時，能個別獲 得各位置的高度，而能實施更高精度的聚焦位置之調整。 再者，上述實施形態中，雖未提及測平(Leveling)，但在平 台7上(或基板保持具8)設置測平機構，以使玻璃基板P之 曝光範圍能相對投影光學系統PL儘可能地成垂直，根據 算出之高度Z1〜Z3，進行玻璃基板P之Z方向高度調整及 測平調整，據此則更易於將玻璃基板P之曝光面納於焦點 深度內。 又，作爲本實施形態之基板，並不限於液晶顯示面板 製造用之玻璃基板，亦可適用半導體裝置用之半導體晶圓 W、或薄膜磁頭用的陶瓷晶圓、或曝光裝置所使用之光罩 或標線片的原版(合成石英、矽晶圓)等。 作爲曝光裝置1，除了採用在光罩Μ與玻璃基板P爲 靜止狀態下使玻璃基板Ρ之圖案曝光、使玻璃基板Ρ依序 步進移動的步進重複方式的投影曝光裝置（stePPer)外’亦 可採用同步移動光罩Μ與玻璃基板P以對光罩Μ之圖案 進行掃描曝光之步進掃描方式的掃描型曝光裝置(acanning • stepper ; USP5,473,410)。 曝光裝置1之種類，並不限於將液晶顯示面板之圖案 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -n ϋ n n n It 一 · n β— ϋ t n n im M 線一 505975 A7 ____B7___ 五、發明說明（/★) (請先閱讀背面之注意事項再填寫本頁) 曝光於玻璃基板之液晶用曝光裝置，亦能廣泛地適用於半 導體製造用之曝光裝置，用以製造薄膜磁頭、攝像元件 (CCD)或標線片R等之曝光裝置。 又，作爲曝光光之光源，並不限於由超高壓水銀燈所 產生的輝線((g 線(436nm)、h 線(404nm)、i 線(365nm))、 KrF準分子雷射(248nm)、ArF準分子雷射（193nm)、F2雷 射（157nm)、Ar2雷射（126nm)等，亦可使用電子束或離子束 等之帶電粒子線。 例如，使用電子束時，可使用熱電子放射型之六硼化 鑭(LaB6)、鈦(Ta)來作爲電子槍。又，亦可使用YAG雷射 或半導體雷射等的高次諧波等。例如，以摻雜有餌 (e:rbiiim)(或餌與釔兩者)之光纖放大器，將來自DFB半導 體雷射或光纖雷射所振盪出之紅外線或可視區域之單一波 長雷射予以放大，且使用非線形光學結晶將轉換成紫外光 波長的高次諧波作爲曝光光亦可。又，若設單一波長之雷 射的振盪波長在1.544〜1.553nm之範圍內的話，即能獲得 193〜194nm範圍內的8倍高次諧波，亦即能獲得與ArF 準分子雷射大致相同波長的紫外光，若設振盪波長在1·57 〜1.58nm之範圍內的話，即能獲得157〜158nm範圍內之 10倍高次諧波，亦即能獲得與？2雷射大致相同波長的紫外 此外，使用雷射等離子光源、或S0R所產生的波長5 〜50nm左右的軟X線區域、例如波長爲13.4nm、或 11.5nm的EUV(Extreme Ultra Violet)光來作爲曝光光亦可 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 505975 A7 ____ _B7 五、發明說明（/r ) (請先閱讀背面之沒意事項再填寫本頁) ，EUV曝光裝置係使用反射型標線片、且投影光學系統係 僅由複數片(例如3〜6片左右)之反射光學元件(反射鏡)所 構成之縮小系統。進一步的，亦可使用硬χ線(例如波長爲 lnm程度以下）來作爲曝光光，此曝光裝置細採用近接 (proximity)方式。 又，投影光學系統PL並不限於縮小系統，亦可是等 倍系統或放大系統之任一者。又，投影光學系統PL亦可 是折射系統、反射系統、及反射折射系統中之一者。又， 當曝光光之波長在200nm程度以下時，最好是能使用曝光 之吸收較少的氣體（氮、氨等惰性氣體），來淸洗曝光光通 過之光路。此外，使用電子束之情形時，亦可使用由電子 透鏡及偏向器所構成的電子光學系統來作爲光學系統。又 ，電子束通過之光路當然應爲真空狀態。又，本發明亦能 適用於不使用投影光學系統PL，而使光罩Μ與玻璃基板Ρ 相接近來將光罩Μ之圖案加以曝光的近接曝光裝置。 此外，於基板載台2或光罩載台使用線性馬達(參照 USP5,623,853或USP5,528，118)時，無論採取使用空氣軸 承之氣浮型、及使用羅倫茲力或反作用力之磁浮型之任一 者皆可。又，各載台可以是沿導件移動者，亦可以是不設 置導件之無導件者。 作爲各載台之驅動機構，可使用藉將2維配置的磁石 單元與2維配置的電樞單元作相對向的配置所產生的電磁 力，來驅動各載台的平面馬達。此時，將磁石單元與電樞 單元的其中一方連接於載台，並將磁石單元與電樞單元的 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 505975 A7 ___B7 ___ 五、發明說明（Μ ) 另一方設置於載台的移動面側即可。 因基板載台2之移動所產生的反作用力，爲了不使其 傳至投影光學系統PL，可如特開平8-166475號公報 (USP5,528，1187)所揭示般地，使用框架(frame)構件將之機 械性地釋放至地面。 因光罩載台之移動所產生的反作用力，爲了不使其傳 至投影光學系統PL，可如特開平8-330224號公報 (USP6,020,710)所揭示般地，使用框架構件將之機械性地 釋放至地面。 如上述般，本實施形態之曝光裝置1，係以保持既定 之機械精度、電氣精度、光學精度之方式，組裝包含本發 明申請專利範圍所列舉之各構成要素的各種副系統來加以 製造。爲確保上述各種精度，在該組裝前後，就各種光學 系統，進行用來達成光學精度之調整，就各種機械系統， 進行用來達成機械精度之調整，就各種電氣系統，進行用 來達成電氣精度之調整。從各種副系統到曝光裝置之組裝 步驟，包含有各種副系統相互之機械性接合、電氣電路之 配線接合、氣壓回路之配管接合等。在從該各種副系統到 曝光裝置之組裝步驟前，當然有各副系統之各個組裝步驟 。在各種副系統之曝光裝置之組立製程後，進行綜合調整 ，以確保曝光裝置全體之各種精度。又，曝光裝置之製造 最好是能溫度及潔淨度等受到管理之潔淨室中進行。 液晶顯示元件或半導體元件等之元件裝置，如第5圖 所示，係經進行液晶顯示裝置等之功能、性能設計的步驟 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---------% 505975 A7 --------B7 _ 五、發明說明（卩） 201，根據該設計步驟製作標線片R(光罩)的步驟2〇2，由 石英等製作玻璃基板P、或由矽材料製作晶圓的步驟203， 藉前述實施形態之曝光裝置1將標線片R之圖案曝光於玻 璃基板P(或晶圓)的步驟204，組裝液晶顯示元件等之步驟 (若爲晶圓時，則包含切割步驟、打線步驟、封裝步驟)2〇5 、檢查步驟206等加以製造。 [發明效果] 如上述之說明，請求項1之曝光裝置，係設置複數個 具有送光部(將在基板之第1位置反射的檢測光送至第2位 置），以及受光部(接受在第1位置與第2位置所反射的檢 測光)的位置檢裝置。 據此，該曝光裝置能獲得不致降低處理能力，且能使 用複數個位置資訊來排除因基板上之傷痕或異物等急遽之 凹凸所造成的影響，實施更高精度的焦點位置之測量，且 即使在焦點深度較淺、且因位置檢測裝置而僅能確保狹窄 之空間的情況下’亦能正確且容易地求出基板之焦點方向 位置等效果。 請求項2之曝光裝置，其位置檢測裝置係檢測偏離投 影光學系統之光軸正下方之基板的位置資訊。 據此，該曝光裝置能獲得在基板上的曝光照射區域內 實施最佳之聚焦位置調整之效果。 請求項3之曝光裝置，其第1位置檢測裝置與第2位 置檢測裝置係配置成大致正交。 據此，該曝光裝置能獲得有效率地測量基板上之矩形 19 尺度適財關家鮮（CNS)A4祕（210>< 297公釐)-- 丨I丨-I丨丨*丨丨丨丨丨·丨丨丨丨丨丨丨訂·丨丨丨丨丨丨丨* » (請先閱讀背面之注意事項再填寫本頁) 505975 --—__ B7___ 五、發明說明（0 ) 曝光照射區域內之週邊部份的效果。 請求項4之曝光裝置，其位置檢測裝置係具備第1檢 測裝置(用以檢測投影光學系統之光軸正下方之基板之位置 資訊），以及第2檢測裝置（用以檢測偏離投影光學系統之 光軸正下方之基板的位置資訊）。 請求項5之曝光裝置，其第2檢測裝置具有送光部(以 將在基板之第1位置反射的檢測光送至第2位置），以及受 光部(係接受第1位置及第2位置所反射的檢測光）。 據此’該曝光裝置能求得以曝光於基板上之光軸正下 方之位置爲基準之曝光照射區域內的其他高度，能在曝光 照射區域內實施最佳聚焦位置之調整。 請求項6之曝光裝置，係設置複數個第2檢測裝置。 據此’該曝光裝置能使用複數個位置資訊來排除因基 板上之傷痕或異物等之急遽的凹凸所造成的影響，能實施 更高精度的焦點位置之測量，且即使焦點深度較淺，或因 位置檢測裝置而僅能確保狹窄之空間的情況下，亦能正確 且容易地求出基板之焦點方向位置。 20 (請先閱讀背面之注意事項再填寫本頁)----- Order -------- * Line J This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 505975 ------- A7 ____ B7 _____ V. DESCRIPTION OF THE INVENTION (, 丨) The pattern formed on the mask M is exposed through a projection optical system. Further, according to the detection result of the laser interferometer, the Y stage 5 and the X stage 6 are moved in a step & repeat manner, so that the pattern of the photomask M is exposed on the glass substrate P in multiple exposures. . In the exposure device of this embodiment, since the detection lights B2 and B3 of the autofocus system u, 12 undergo multiple reflections on the glass substrate P, the measurement within the measurement range is improved by averaging the reflection several times. The resolution capability enables the focus direction position of the glass substrate P to be obtained more accurately. Therefore, even if the focal depth becomes shallower as the resolution of the projection optical system PL is improved, the possibility of the exposure surface deviating from the focal depth can be minimized. In addition, as compared with the case where the position detection devices are individually provided for the positions P1 to P4 on the glass substrate P, the number of driving mechanisms such as a vibrating member can be reduced. Therefore, it is easy to ensure even a narrow space. And the position of the focus direction is calculated | required correctly. In addition, in this embodiment, since two sets of an auto-focusing system for reflecting the detection light are provided, the heights of the plurality of glass substrates P can be obtained, so that each detection frame can be used for statistical processing to exclude the causes on the glass substrate P. Impacts such as scars and foreign matter, which are caused by sharp unevenness, are used to perform more accurate focus position measurement. In addition, since the heights Z2 and Z3 are obtained from the reflection results of the plural positions, the distance between the reflection positions can also be used to calculate the inclination of the glass substrate P. In particular, for example, when the position directly below the optical axis of the projection optical system PL and the first position P1 and the second position P2 are on the tilt axis on the glass substrate P, the result is Z1 = Z2, and the tilt cannot be calculated. 13 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) '" " < Please read the precautions on the back before filling this page). --------- Line 1r 505975 —— A7 __B7 ___ 5. When explaining the invention (A) degrees, the inclination can also be obtained according to the height of Z3. In addition, if the heights Z1 to Z3 are calculated separately to obtain these relative positional relationships, one of them is used as a reference to align with the center of the focal position of the projection optical system PL, or the amount of displacement from the center position. If the deviation amount is maintained inside the device, the displacement amount from the center of the focus can also be directly obtained for heights other than the reference frame. Further, in the exposure apparatus of this embodiment, the height of the glass substrate P directly below the optical axis of the projection optical system PL is detected by the autofocus system 10, and the deviation from the position directly below the optical axis is detected by the autofocus systems 11, 12 Height of the glass substrate P, it is possible to find other heights in the exposure irradiation area that are actually exposed to the position directly below the optical axis on the glass substrate P as a reference to implement the optimal focus position in the exposure irradiation area. Adjustment. In particular, in this embodiment, since the autofocus systems 11, 12 are arranged so that the detection lights B2 and B3 are approximately orthogonal, the peripheral portions in the rectangular exposure area can be efficiently measured. In addition, since the plurality of positional information can be obtained without moving the substrate stage 2 as described above, it is possible to prevent a reduction in the processing power rate due to the time consuming movement of the stage. Furthermore, in the above-mentioned embodiment, although a configuration is adopted in which two sets of the autofocus system are provided to reflect the detection light, a configuration in which three or more sets are provided may be used. In addition, although the configuration in which the detection light of the autofocus systems 11 and 12 is reflected twice on the glass substrate P is adopted, as long as it is more than two times, it is not limited to $, and can also be used as a light transmitting unit as shown in FIG. 4 The two reflecting mirrors 35, 35 are arranged in a way that encloses the glass substrate P, and the detection light emitted from the light-emitting part 20 is reflected four times at the positions P1 to P4 on the glass substrate P. 14 This paper size applies to China National Standard (CNS) A4 Specification (210 x 297 mm) (Please read the precautions on the back before filling out this page) --------- Order ------- 1!% • r · 505975 A7 __E7___ 5. Description of the Invention (G): Light is received by the light receiving unit 33. In this case, the resolution can be further improved by increasing the number of reflections. In the above-mentioned embodiment, although two autofocus systems 11, 12 are used to detect the height in the focus direction of the positions P1 to P4, for example, four autofocus systems 10 are provided, and each autofocus is provided. It is also possible for the system to detect the height of each position separately. At this time, the height of each position can be obtained individually, and adjustment of the focus position with higher accuracy can be performed. Moreover, in the above embodiment, although leveling is not mentioned, a leveling mechanism is provided on the platform 7 (or the substrate holder 8) so that the exposure range of the glass substrate P can be as wide as the projection optical system PL. Possibly perpendicular, according to the calculated heights Z1 to Z3, the height adjustment in the Z direction and the leveling adjustment of the glass substrate P are performed, so that it is easier to incorporate the exposure surface of the glass substrate P within the depth of focus. The substrate of this embodiment is not limited to a glass substrate for manufacturing a liquid crystal display panel, and a semiconductor wafer W for a semiconductor device, a ceramic wafer for a thin-film magnetic head, or a photomask used for an exposure device can be applied. Or the original version of the reticle (synthetic quartz, silicon wafer), etc. As the exposure device 1, a projection exposure device (stePPer) is used in addition to a step-and-repeat method in which the pattern of the glass substrate P is exposed while the photomask M and the glass substrate P are at a standstill. A scanning type exposure device (acanning • stepper; USP 5,473,410) may also be used in a step-and-scan manner in which the mask M and the glass substrate P are moved synchronously to scan and expose the pattern of the mask M. The type of exposure device 1 is not limited to the pattern of the liquid crystal display panel. 15 The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -n ϋ nnn It a · n β— ϋ tnn im M line one 505975 A7 ____B7___ V. Description of the invention (/ ★) (Please read the precautions on the back before filling this page) The exposure device for liquid crystals exposed on glass substrates can also It is widely used in exposure equipment for semiconductor manufacturing, and is used to manufacture thin film magnetic heads, imaging elements (CCD), and reticle R. The light source for exposure light is not limited to the glow lines ((g-line (436nm), h-line (404nm), i-line (365nm)), KrF excimer laser (248nm), ArF Excimer lasers (193nm), F2 lasers (157nm), Ar2 lasers (126nm), etc., can also use charged particle beams such as electron beams or ion beams. For example, when using an electron beam, a thermionic emission type can be used. Six lanthanum boride (LaB6) and titanium (Ta) are used as electron guns. Higher harmonics such as YAG lasers and semiconductor lasers can also be used. For example, doped with bait (e: rbiiim) ( (Or both bait and yttrium) fiber amplifiers, amplifying single wavelength lasers from the infrared or visible region oscillated by DFB semiconductor lasers or fiber lasers, and using non-linear optical crystals to convert them to high wavelengths of ultraviolet light Sub-harmonics can also be used as exposure light. Moreover, if the laser oscillation wavelength of a single wavelength is in the range of 1.544 to 1.553 nm, 8 times higher harmonics in the range of 193 to 194 nm can be obtained. Obtain ultraviolet light with approximately the same wavelength as the ArF excimer laser. If it is in the range of 1.57 to 1.58nm, 10 times higher harmonics in the range of 157 to 158nm can be obtained, that is, ultraviolet rays with approximately the same wavelength as the? 2 laser can be obtained. In addition, a laser plasma light source or A soft X-ray region with a wavelength of about 5 to 50 nm, such as EUV (Extreme Ultra Violet) light with a wavelength of 13.4 nm or 11.5 nm, can also be used as the exposure light. 16 This paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 505975 A7 ____ _B7 V. Description of the invention (/ r) (Please read the unintentional matter on the back before filling in this page), EUV exposure device uses reflective reticle and projection optical system It is a reduction system composed of a plurality of reflective optical elements (reflectors) (for example, about 3 to 6). Further, a hard X-ray (for example, a wavelength of about 1 nm or less) can be used as the exposure light. The exposure device adopts a proximity method. Also, the projection optical system PL is not limited to a reduction system, and may be any of a magnification system or a magnification system. In addition, the projection optical system PL may be a refractive system, a reflection system, and One of the refracting systems. Also, when the wavelength of the exposure light is below 200nm, it is best to use a gas with less absorption (inert gas such as nitrogen, ammonia, etc.) to clean the light path through which the exposure light passes. In addition, when an electron beam is used, an electron optical system composed of an electron lens and a deflector can also be used as the optical system. Of course, the optical path through which the electron beam passes should be in a vacuum state. Also, the present invention can also be applied. This is a proximity exposure device that does not use the projection optical system PL and makes the mask M and the glass substrate P close to each other to expose the pattern of the mask M. In addition, when a linear motor is used for substrate stage 2 or mask stage (refer to USP 5,623,853 or USP 5,528,118), regardless of whether an air bearing type using air bearings is used, or a magnetic levitation type using Lorentz force or reaction force is used. Either type can be used. In addition, each stage may be a person moving along the guide, or a person without a guide without a guide. As the drive mechanism of each stage, a planar motor that drives each stage by using an electromagnetic force generated by a two-dimensionally arranged magnet unit and a two-dimensionally arranged armature unit facing each other can be used. At this time, connect one of the magnet unit and the armature unit to the carrier, and connect the 17 paper sizes of the magnet unit and the armature unit to the Chinese National Standard (CNS) A4 (210 X 297 mm) 505975 A7 ___B7 ___ 5. Description of the invention (M) The other side can be set on the moving surface side of the carrier. In order to prevent the reaction force generated by the movement of the substrate stage 2 from being transmitted to the projection optical system PL, a frame can be used as disclosed in Japanese Patent Application Laid-Open No. 8-166475 (USP 5,528,1187). The component releases it mechanically to the ground. In order to prevent the reaction force generated by the movement of the mask stage from being transmitted to the projection optical system PL, it is possible to mechanically use a frame member as disclosed in JP-A-8-330224 (USP6,020,710). Ground is released to the ground. As described above, the exposure device 1 of this embodiment is manufactured by assembling various sub-systems including the constituent elements listed in the scope of the patent application for the present invention while maintaining predetermined mechanical, electrical, and optical accuracy. To ensure the above-mentioned various precisions, before and after the assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are used to achieve electrical accuracy. Of adjustment. The assembly steps from various sub-systems to the exposure device include mechanical joining of various sub-systems, wiring joining of electrical circuits, and pipe joining of pneumatic circuits. Before the assembly steps from the various sub-systems to the exposure device, of course, there are various assembly steps for each sub-system. After the assembly process of the exposure devices of various sub-systems, comprehensive adjustment is performed to ensure various accuracy of the entire exposure device. Moreover, it is desirable to manufacture the exposure device in a clean room where temperature and cleanliness are controlled. As shown in Figure 5, the liquid crystal display element or semiconductor element and other device devices are designed according to the functions and performance of the liquid crystal display device. Step 18 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm). (%) (Please read the notes on the back before filling this page) Order ---------% 505975 A7 -------- B7 _ V. Description of the invention (卩) 201, according to the design Step 202 of making a reticle R (mask), step 203 of making a glass substrate P from quartz or the wafer of silicon material, and patterning the reticle R by the exposure device 1 of the foregoing embodiment Step 204 of exposing on the glass substrate P (or wafer), steps of assembling a liquid crystal display element (if it is a wafer, it includes a cutting step, a wire bonding step, and a packaging step) 205, an inspection step 206, and the like are manufactured. [Effects of the Invention] As described above, the exposure device of claim 1 is provided with a plurality of light-transmitting sections (sending the detection light reflected at the first position of the substrate to the second position), and a light-receiving section (receiving at the first Detection light reflected from the first position and the second position). According to this, the exposure device can obtain a non-reduced processing capability, and can use a plurality of position information to eliminate the influence caused by the sharp unevenness such as a flaw on the substrate or a foreign object, and implement a higher-precision measurement of the focus position. In a case where the depth of focus is shallow and only a narrow space can be secured due to the position detection device, the effects such as the position in the focus direction of the substrate can be accurately and easily obtained. The exposure device of claim 2 has a position detection device that detects position information of a substrate that is offset from directly below the optical axis of the projection optical system. According to this, the exposure device can obtain the effect of performing optimal focus position adjustment in the exposure irradiation area on the substrate. The exposure device of claim 3, wherein the first position detection device and the second position detection device are arranged substantially orthogonally. According to this, the exposure device can efficiently measure the rectangular 19-scale suitable financial and domestic (CNS) A4 secret on the substrate (210 > < 297 mm)-丨 I 丨 -I 丨 丨 * 丨 丨 丨丨 丨 · 丨 丨 丨 丨 丨 丨 丨 Order 丨 丨 丨 丨 丨 丨 丨 ** (Please read the precautions on the back before filling out this page) 505975 ---__ B7___ V. Description of the invention (0) Exposure area The effect of the inner peripheral part. The exposure device of claim 4, the position detection device includes a first detection device (for detecting the position information of the substrate directly below the optical axis of the projection optical system), and a second detection device (for detecting the deviation from the projection optical system). Position of the substrate directly below the optical axis). The exposure device of claim 5, wherein the second detection device includes a light transmitting section (for transmitting the detection light reflected at the first position of the substrate to the second position), and a light receiving section (receiving the first position and the second position). Reflected detection light). According to this, the exposure device can obtain other heights in the exposure irradiation area based on the position directly below the optical axis on the substrate, and can perform the adjustment of the optimal focus position in the exposure irradiation area. The exposure device of claim 6 is provided with a plurality of second detection devices. According to this, the exposure device can use a plurality of position information to eliminate the influence caused by the sharp unevenness such as a flaw on the substrate or a foreign object, and can implement a more accurate measurement of the focus position, even if the depth of focus is shallow, or In the case where only a narrow space can be secured by the position detection device, the focus direction position of the substrate can be accurately and easily obtained. 20 (Please read the notes on the back before filling this page)
本紙張尺度適用中國國^準（CNS)A4規格（210 X 297公釐〉This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)