TW501159B - Multilayer electrode structure and method for forming multilayer electrode structure for a flat panel display device - Google Patents

Abstract

A multilayer electrode for a flat panel display device and a method for forming a multilayer electrode for a flat panel display device. In one embodiment, the multilayer electrode is formed by depositing a metal alloy layer. After the deposition of the metal alloy layer, the present embodiment deposits a protective layer above the metal alloy layer to form a multilayer stack. The present embodiment then subjects the multilayer stack to a cleansing process to remove contaminants. Subsequently, the present embodiment etches the multilayer stack to form the multilayer electrode for the flat panel display device. In another embodiment, the present invention provides a method for forming a multilayer stack with reduced formation of an intermetallic compound. In such an embodiment, the present embodiment deposits a first metal alloy layer above a substrate. Next, the present embodiment forms a barrier layer above the first metal alloy layer. In this embodiment, the barrier layer is adapted to prevent the formation of an intermetallic compound within the first metal alloy layer. Next, the present embodiment deposits a second metal alloy layer above the barrier layer. In so doing, the barrier layer also prevents the formation of the intermetallic compound within the second metal alloy layer.

Description

501159 V. Description of the invention (1) This application is Lee et al. The title of the application filed in October 19, 1999 is " ELECTRODE STRCUTURE AND METHOD FOR FORMING ELECTRODE STRUCTURE FOR A FLAT PANEL DISPLAY " United States Patent Application Serial No. The continuation of 09 / 421,781, and this case is also related to the United States Patent Application entitled "DUAL-LAYER METAL FRO FLAT PANEL DISPLAY". The present invention relates to a flat display device, and more particularly, to a method for forming an electrode structure for forming a flat display device. [Known technology] Take a flat display in a display device as an example. The cathode structure used in the flat display is formed on a back plate. The cathode structure includes a plurality of rows of electrodes and a plurality of barrier electrodes. The electrodes of the plurality of columns and the electrodes of the plurality of columns are used to activate a part of the field emitters. The electron system emitted by the field emitter moves directly toward the pixel or sub-pixel region (sub-pixei regins) above the backplane, and when the column electrode and the barrier electrode are selectively activated The system can cause the electrons to directly impact the pixel or sub-pixel area. Generally speaking, a phosphor layer is deposited on the inner surface of the panel. When the electrons impinge on the phosphor layer, visible light of red, green, or blue can be generated, and then formed by the visible light of red, green, or blue. A visible display. It is a common method in the conventional technology to form a column electrode and a barrier electrode system by using a layer. However, it is easy to form protrusions on the aluminum phase. These protrusions affect the structure in addition to In addition to flatness, it will also cause electricity

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The short circuit between the electrode and the barrier electrode. ... In another conventional technique, a tantalum layer is formed on the aluminum layer to reduce the formation of protrusions. However, the structure formed by the button layer has a relatively low conductivity in a large flat panel display, that is, the button layer forms a relatively large primary reactance on the column electrode or the column electrode of the large flat panel display. The structure formed by the layers can only be applied to small flat panel display. In the structure of the aluminum layer with the button layer described above, the molding method is first, 3 layers, and redundantly formed in a sputtering chamber. ^ Ϊ the plate, and after the deposition of the aluminum layer is completed, the back can be moved to the office. Then 'the curtain layer operation is performed on the layer, and 1 wet etching is formed on the back plate. The exposure operation is performed on top, and then the inscription layer is sequentially etched by the knot, so that the desired deposition operation can be formed. The second sputtering chamber is used to move the layering board out of the ㈣ plating chamber. = The back deposit is formed on the back plate and pushed for one s, μ ^ Soap is used as a dish, and a photoresist is used to etch the button layer. = After the second examination operation, the etching operation is performed by an etching program, which is generally used. ; Wet etching cannot perform heme iQn ^ or borrow on this button layer The considerable cost of i is due to the remaining ion ions: C redundant: the steps and the two masking steps are not excessive except for 501159. V. Description of the invention (3) It has a steep and strong crack. 1 electrode or fence electrode will cause this layer to be repeated, and the dry etching process is also the case, the dry etching process will be eroded through the pinhole =: 孔 (了. 丨 es. Only the cost of use Zhishang molecular band process (bdymer Strip process) to remove the polymer ##

In the dry etching process, pin holes are also formed in the glass ~ back plate. In the subsequent process steps, the barrier electrode may be in ion bombardment, cavity etch, cone deposition, dielectric ', deposition, and dielectric layer. It is damaged during the process of masking and etching, molybdenum layer deposition and etching, chromium layer deposition and etching, and polyimide deposition. In addition to these processes, in addition to the possible short-circuit and open-circuit of the electrode, May reduce product yield and device failure. Another problem that arises in the conventional technology is the column to focus waffle short. The phenomenon of the column to focus waffle short may cause a decrease in product yield and device failure. The stop electrode will react with the frit seal material of the frit seal region, so a short circuit between the stop electrodes may be formed. Therefore, in addition to the electrode structure and its forming method, it is necessary to avoid the protrusion III! 1 II 1 I 1 11 ί 1 I 1012-4065-PF; ALEX.ptd page 9 ”

The production of products and the phenomenon of improper short circuit and open circuit in accordance with the above requirements, the product can maintain the established yield and product, and it must also be able to effectively reduce the electrode space and meet the minimum cost to make the product quality. (oxidizing and the multilayer structure. However, the laminate may have formed a multilayer electrode that must be used with precise and excessive techniques, that is, the target layer can be combined with the compound system and with its oxidation and neodymium engraving,夂 Subsequent oxidation, the formation of the compound: 1 箆 Another: 〒 is based on the production and production through two etching steps. The first etch step is through an oxidant

Oxidation treatment of a multi-layered object, the formation of multi-layer electrode junctions under the action of the etchant, the second material, and the specific environment may cause the phenomenon of multi-layered: 2, and this excessive oxidation phenomenon is also ^ ^ Present generation. Therefore, the electrode forming process is performed under white and etching control, so as to avoid “open circuit” or disconnection due to excessive oxidation.

Another disadvantage in the operation is that during the forming process in a standard vacuum environment, intermetallic compounds will be formed, and the two metals in the multi-layered layer formed in the vacuum environment will be formed, and the intermetallic compounds will be formed. Electrical connection. This is due to the diffusion of atoms and molecules between the two metal layers, and the size of the components of the intermetallic compounds contained will significantly affect the rate. Therefore, the generation of intermetallic compounds may lead to changes in etching and unpredictable results. Interlayer metal must be avoided in multilayer electrodes and their forming methods

、 Explanation of the invention (5) == ,,, σ There are no protrusions on the structure, and it will not be shaped in the cathode structure: sexual short circuit or open circuit phenomenon, and at the same time, it can be used in the clinic at the lowest cost. The product has a predetermined yield and material throughput. The electrode structure for flat panel display proposed in one embodiment of the present invention: ^ includes the bottom electrode and the top electrode, in this embodiment, the bottom band is a column electrode, and the top electrode is Fence electrodes, and the bottom two f / and the top electrodes are separated by a resistive layer and a dielectric layer. In: I, the bottom electrode and the top electrode are made of a metal alloy, and in an embodiment, the metal alloy is an aluminum alloy or silver Then, a sandwich layer is deposited and etched to form—in terms of electrical knowledge technology, the deposition of the hair is in order to increase the yield and improve the order of the masking step and the remaining electrode structure. It can be effectively reduced due to the combination of the present invention, in addition to omitting damage to the bottom surface layer panel (for example: used to form a flat electrode system that first deposits a metal on the metal alloy layer). The metal plating tool proposed by Ming Dynasty, such as the material throughput, and the conventional technique of the step and a mask step and a single low-cost 'increasing the yield without using a dry etching process is related to the corrosion phenomenon of the dry etching equipment. The same pinholes) surface display device alloy layer on one, and then by two sputtered alloy layer and this can effectively, compared with must, the present invention wet etching step and improve material order In addition to carrying out the process, it will not be produced during the manufacturing process, and it does not need a lot of back plates. With the practice of a wet tool, the cost of the sandwich layer can be reduced by two proposals. During the formation of the electrode, the glass must be gathered during the formation of the electrode.

501159 V. Description of the invention (6) Polymer strip process. This is to help increase the throughput and yield of the material. In an embodiment, a passivation layer (paSSiVation layer) is formed on the top electrode by a deposition method. In this embodiment, the purification layer is made of a silicon nitride material, and then Then, the silicon nitride layer is masked and etched, so that part of the silicon nitride layer is covered on the top electrode, and the part of the silicon nitride layer is used to prevent the two top electrodes from being subsequently No damage during manufacturing. Then, a gate metal formed by a deposition method is formed under a masking and etching step, and a gate structure is formed under the masking and etching steps. The top electrode is protected, and then a complete cathode structure can be formed through general process steps. In one embodiment, a complex emitter (emi ^ ^ ers) and a focus structure can be formed by this process step, and the steps of these processes and processes in this embodiment include There are ion bombardment, ah etch, cone deposition, dielectric deposition, masking and etching of dielectric layers, polyimide, and imine deposition. During the formation of the cathode structure, the top electrode is protected by the passivation layer, so that the top electrode can be prevented from being damaged in the general process ^, and the short circuit and depression of the top electrode can be prevented. In addition, since the top electrode is protected by the passivation layer, column shorts can be prevented from being formed in the frit seal regiron, and this embodiment is compared with the conventional technology.

501159

V. Description of the invention (7) It is a short-circuit phenomenon with less exposure metal and metal. It can reduce the focus relative to the focus. Because the alloy or silver alloy system or silver alloy system can be applied to the electrical properties of the aluminum alloy technology, the invention can be prevented. Compared with the known, the aluminum alloy has good flatness '14: the same day; except; the object 'is so as to make the poles short-circuited and open-circuited ... to effectively improve] so as not to form the structure of the electro-multilayer electrode and its method ;: ::; ::::: The device can avoid the formation of short circuit and open circuit of the electrode, and can be used for a short time: J = 幵 product yield and material throughput. The structure and method proposed in another embodiment of the present invention for forming a multi-layer electrode for a planar display device can reduce the formation of unnecessary over-oxidation phenomena, and can moreover "Avoid", or the occurrence of broken artifacts. More specifically, after the deposition of a metal alloy layer is completed, a protective layer is deposited on the metal alloy layer to form a multi-layered object. Subsequently, ' The multi-layered object is designated to remove contaminants through a cleaning process, so that the multi-layer electrode for the flat display device can be formed after the multi-layered object is left. Μ μ In another embodiment, the present invention In the proposed structure and method for forming a multilayer electrode for a flat display device, an intermetallic compound is not generated during the electrode forming process. In this embodiment, a first metal alloy is deposited first. Layer on a substrate, and secondly forming a resistive layer on the first metal alloy layer. The resistive layer is used to prevent

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501159 V. Description of the invention (8) Formation of intermetallic compounds. Subsequently, a second metal alloy layer is deposited on the resist layer, the resist layer is used to prevent the formation of the intermetallic compound in the second metal alloy layer. In this way, the formation of the intermetallic compound inside the second metal alloy layer can be prevented by the resistance layer system. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows. Fig. 1 shows a method for forming an electrode structure of a display device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating the formation of a metal alloy layer for a display device on a backplate by a deposition method according to an embodiment of the present invention. . Fig. 3 is a cross-sectional view illustrating the deposition operation of a cover layer for a display device according to an embodiment of the present invention. Fig. 4A is an enlarged view showing a case where a cover layer is formed in the structure shown in Fig. 3 through steps such as a mask and a rest. Fig. 4B is an enlarged view showing a case where a cover layer is formed in the structure shown in Fig. 3 through steps such as masking and etching. FIG. 5A is an enlarged view showing when a resist layer is formed in the structure shown in FIG. 4A by a deposition step. Fig. 5B shows an enlarged view when a resist layer is formed in the structure shown in Fig. 4? By the deposition step. Figure 6A shows the structure shown in Figure 5A by the deposition step.

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BRIEF DESCRIPTION OF THE INVENTION An enlarged view after a dielectric resistance layer is formed in. Structure shown in Structure shown in Structure shown in Structure shown in Structure shown in Figure 6B is an enlarged view of a dielectric resistive layer formed in Figure 5B by a deposition step. FIG. 7A is an enlarged view after a metal alloy layer is formed in FIG. 6A by a deposition step. FIG. 7B is an enlarged view after a metal alloy layer is formed in FIG. 6B by a deposition step. FIG. 8A is an enlarged view after a capping layer is formed in FIG. 7A by a deposition step. FIG. 8B is an enlarged view after a cover layer is formed in the structure shown in FIG. 7B by a deposition step. Fig. 9A is an enlarged view showing the structure shown in Fig. 8A after the steps of masking and etching are completed. Fig. 9B is an enlarged view showing the structure shown in Fig. 8B after the steps of masking and etching are completed. Fig. 10A shows an enlarged view when a passivation layer is formed in the structure shown in Fig. 9 by a deposition step. Fig. 10B shows when a passivation layer is formed by a deposition step in Fig. 9β. An enlarged view of the structure shown after a passivation layer is formed. ° Figure 11A is an enlarged view of the structure shown in Figure 10A after the steps of masking and etching are completed. Fig. 11B is an enlarged view showing the structure shown in Fig. 10B after the steps of masking and etching are completed.

1012-4065-PF; ALEX.ptd Page 15 501159 V. Description of the invention (ίο) Figure l ^ A shows when a gate metal layer (gate metal layer) is formed in the structure shown in Figure 11A by a deposition step (gate) metal layer layer). The figure shows the junction shown in Figure 11B by the deposition step.

An enlarged view after a gate metal layer is formed in the W structure. The first figure is an enlarged view of the structure shown in FIG. 12A after the steps of the mask and the rest are completed. Figure Γ§ί shows an enlarged view of the structure shown in Figure 12B after the steps of masking and remaining time are completed.

Figure l ^ A is an enlarged view of the structures shown in Figure 13A after forming the emitters and focus structures—

TfC 〇 The figure shows the magnification of the focusing structure and the focusing structure shown in Figure 13B. Fig. 15 is a diagram showing a method for forming an electrode structure according to an embodiment of the present invention. "A member is not installed. ^ The first reference A is a cross-sectional view according to an embodiment of the present invention. The back plate has a bottom, r ", and one of the back plates. Dielectric layer and a gate layer = electrode, and the $

FIG. 16 / B is a cross-sectional view of one of the first embodiment according to an embodiment. The back plate has a bottom plate and a top plate on the back plate. The back plate includes a barrier layer, a dielectric layer, and a gate. Polar layer. The figure shows the passivation layer formed in the structure shown in Figure 9A by deposition and masking. Etching and other steps

1012-4065-PF; ALEx.ptd Page 16 5U1159 V. Description of the invention (π) Figure 16D is shown in Figure 矣; 丄, ^ ^ 9B H Φ-a table borrowing, masking and etching steps are shown in Figure A passivation layer is formed in the structure not shown in the figure. Figure 16E is a cross-sectional view after the steps such as the last name and the engraving in the figure. (Constructed in the mask and the serie show that the mask and etch are completed according to the structure shown in Figure 16D ^ 4 Cross-sectional view after the steps. Figure 16G shows the cross-sectional view after the steps such as the integration and masking, and engraving according to the knot in the 6th ^ ^ ^^ ## (c〇ne raaterial), material layer. This 16th figure is a cross-sectional view showing the structure in 16F after the completion of a step containing 4 layers of chromium, deposition of a cone material, and etching of a dielectric material layer. 槚 卓 綦 第 1 Fig. 6I is an & entire cathode structure in one embodiment of the present invention. Straight%% Fig. 16J is an * entire cathode structure in one embodiment of the present invention. According to an embodiment of the present invention, a method for forming an electrode structure for forming a μ-member device. FIG. 18A shows that according to an embodiment, a plate includes a resistance layer, a dielectric The electric layer and a gate layer. Fig. 18B shows a cross-sectional view of a county according to an embodiment, The back plate having a bottom, suppression, not one of a backplane board comprises a resistive layer, a dielectric layer and a gate layer ". electrode, and the back

1012-4065-PF; ALEX.ptd Page 17 501159 V. Description of the invention (12) Figure 18C shows a cross-sectional view of the structure in Figure 18A after a gate structure is formed using steps such as masking and etching. . Fig. 18D is a cross-sectional view showing a structure of the gate electrode 18B after a gate structure is formed according to the structure in Fig. 18B. Fig. 18E is a cross-sectional view showing the structure in Fig. 18C after going through steps such as masking and etching. Fig. 18F is a cross-sectional view showing the structure in Fig. 18D after going through steps of masking and etching. FIG. 18G is a cross-sectional view after a passivation layer is formed in the structure shown in FIG. 18E by a deposition step and is subjected to steps such as masking and etching. FIG. 18H is a cross-sectional view after a passivation layer is formed in the structure shown in FIG. 18F by a deposition step and is subjected to steps such as masking and etching. FIG. 18I is a cross-sectional view showing the structure in Article 18G after completing the steps of evaporation of a chromium-containing layer, deposition of a cone material, deposition of a dielectric material layer, masking, and etching. Figure 18J is a cross-sectional view of the structure in Figure 18H after completing the steps of evaporation of a chromium-containing layer, deposition of a cone material, deposition of a dielectric material layer, masking, and etching. No. 1 81 (picture shows a cross-sectional view after the steps of masking and etching are completed according to the structure in No. 18 I. No. 18L shows a step of completing the masks and etchings according to the structure in No. 18 J Later section view.

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Fig. 18M shows a complete cathode structure according to one of the inventions. Figure 18N of the display device in her example is shown in one of the present invention ^ a complete cathode structure. Fig. 19 of a display device in the known example shows a method for forming an electrode structure of a display device according to the present invention, and a 20A diagram in the embodiment is a cross-sectional view according to an embodiment. There is a bottom plate on the back plate, a back plate of the display including a resist layer, a dielectric layer, and a titanium acoustic head electrode, and the back figure 20b shows the VV closed electrode layer according to the Λ embodiment. . A cross-sectional view at a later time, one of the backplanes having a bottom display on the backplane includes a resistive layer, a dielectric layer, three σ, and a top electrode. And-the gate layer. Etching and other steps to form a titanium structure, a gate electrode, and a structure. Using the mask in the 20D picture system shows a step according to the 20 °, middle ° ^ ^ cross-sectional view and other steps to form a titanium structure, -M < Figures 20E of the D, D, and D structures show cross-sectional views when the structure is settled by the Shen and Dian structures. In the structure, a passivation layer is formed and is shown in FIG. 20C through the cover film. The cross-section after the steps such as steps and after-cuts is shown in Figure 20D. The cross-section view after the steps such as steps shown in Figure 20D shows that when a passivation layer is formed in the deposited structure and passes through the mask ', Figure 〇 Figure 20G shows the structure of Banxu 1 # according to the structure in 20E. A chrome-containing layer of Taifa, a cone-shaped material, ^ ^ m ^ child product, deposition of a dielectric material layer, and a mask are shown. 5. Explanation of the invention (14) A cross-sectional view after steps such as etching. Fig. 2 is a cross-sectional view showing the evaporation of the root flute 9 and the deposition of a cone material #, A ^ t structure after the completion of the steps including the formation of the complex layer ^ Figure: the deposition and cover of the dielectric material layer The curtain and Figure 2O are cross-sectional views after the steps of 9n. `` The structure is shown in a mask, # 20J is a cross-sectional view after steps 9 and so on. The structure in 2 ° H is completed, and the 20K picture is shown in a full cathode in this hair. structure. Fig. 20L of the display device in the case of bismuth is shown in the present invention ^ a complete cathode structure. Figure 21 of the display arrangement in the first embodiment of the month is shown in accordance with the present embodiment of the electrode structure of the electrode structure of a display device, which is used to form a 22A diagram according to the embodiment of the A cross-sectional view showing the back of one of the writes, on the back panel, the star is right * " The moon board female white bar rt mouth is pretty, has bottom and top electrodes, and the back panel 99: layer, a dielectric layer and -Gate layer. A cross-sectional view of the backplane and one of the monitors ^^ backplane • anchor white bar female. ^: There are bottom and top electrodes on the backplane, and the backplane includes a barrier layer, a dielectric Layer and a gate sound. The 22C diagram shows the cross-sectional view when the passivation layer is formed by the deposition step shown in the second figure, and the steps after the mask and the step are shown in FIG. 22D. Knot shown

501159 V. Description of the invention (15): A cross-sectional view after the formation of a passivation layer through the mask I, etching and other steps. Xi "f is Table 7 ^ A cross-sectional view of the structure of the 22G towel after completing the steps of the dielectric material layer / layer, mask, and etching. It shows the structure of the dielectric material layer according to the structure in 22D. / The cross-sectional view after the steps of masking, etching, etc. The G-correction diagram is a cross-sectional view of the structure after the etching step is used to form a cavity 4 according to the first and second steps, and the # 22H diagram is based on the A cross-sectional view of the structure in the 22F after the formation of a recess. Ai "" A 2-2 means the completion of the deposition of a chrome-containing layer of Sheng Niu material according to the structure in 2 2G, a dielectric A cross-sectional view after the material layer deposition and masking and etching steps. Mask base: A cone is used to complete the first step deposition of a chromium-containing layer, the deposition of a dielectric material layer and the mask according to the structure in Section 2211, and the m-th view / section view. After waiting for the steps, = shows that the mask, screen and surname are carved according to the structure in No. 221. Figure 22L is after __ _ and other steps: it shows the mask and etched figure V / view according to the structure in [2 2]. A complete cathode structure is not shown in Figure 22N of a display device in one embodiment of the present invention. A complete cathode structure is not shown in a display device of one embodiment of the present invention.

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Fig. 23 shows a method for forming an electrode structure of a display device according to an embodiment of the present invention. Figure 2 4A is used to illustrate a port according to an embodiment.

A cross-sectional view of the backplane includes a bottom, a Qiu, and other components-the backplane includes a barrier layer, a dielectric layer, and a gate layer. The electrode and the 24B diagram are cross-sectional views according to one of the embodiments. The back plate has a bottom and a top portion. The back plate includes a barrier layer, a dielectric layer, and a gate. Polar layer. 1 °, and the negative Figure 24C shows the deposition according to the knot in Section 24A, (sputtered molybdenum layer), two * a splash of molybdenum shoulder

A cross-sectional view after the step of depositing and depositing a molybdenum layer. The difference between the vapor-deposited indium layer and FIG. 24D are cross-sectional views showing the deposition of the structure two or three, the vapor-deposited molybdenum layer, and the sputtered molybdenum reed according to the structure in item 20 = a sputtered molybdenum eyebrow. " < / The structure after the child product step is completed after the mask and etching is completed The structure after the mask and etching is completed Figure 24E shows a cross-sectional view after the intermediate step according to step 24C. Figure 24F is a cross-sectional view after the intermediate step according to 24D.

Figure 24G shows the cross-sectional view after the deposition step of the structural layer and a passivation layer in me = ^ becomes a dielectric material. Figure 24Η shows the deposition steps of the ☆ layer and a passivation layer according to the structure in 24F Subsequent cross-sectional view = Cheng-dielectric material. Fig. 241 shows a cross-sectional view after the isochronous step according to the 24th gadolinium structure. Masking and etching

1012-4065-PF; ALEX.ptd 501159 V. Description of the invention (17) ~ " '' '-I The bull picture is a cross-sectional view showing the structure after the mask and etching steps according to the structure in No. 2411. The I-picture is a cross-sectional view after the steps of the mask and the engraved temple are completed according to the structure in No. 24th. Figure 24L is a cross-sectional view of the structure according to Item 24J after the steps of masking and rectifying are completed. Battle mask and etching Figure 24M is a cross-sectional view after the steps such as the structure in Figure 24K. Masking and Etching Fig. 24N is a cross-sectional view showing the structure according to No. 24l after the completion of the steps. Forming a Mask and Etching FIG. 25 shows a method for forming an electrode structure according to an embodiment of the present invention. Fig. 2A is a cross-sectional view of the structure according to one of the embodiments; after the steps of masking and etching are completed, and after the back plate is finished, The backplane has two bottom electrical layers. The backplane includes a barrier layer, a dielectric layer, and a closed-top 4 electrode, and a layer, a vapor-deposited molybdenum layer, and a sputtered molybdenum layer. A layer, a sputtered molybdenum plate 26B is a cross-sectional view of a structure after a mask and an etching step are completed, and after a backplane of a display according to one of the embodiments. The backplane has a bottom = A deposition layer that forms a dielectric layer The backplane includes a resistive layer, a dielectric layer, 2 ° 卩, an electric eucalyptus, and a vapor-deposited molybdenum layer and a sputtering molybdenum layer. Figure 26C is a cross-sectional view showing the structure of the gate in No. 26A after the noisy, sputtered molybdenum plating and other steps.

V. Description of the Invention (18) Figure 26D is a cross-sectional view after steps 26 and so on. The structure is finished in the mask and etched. Figure 2E is shown in Figure 6E. Sectional view after intermediate steps. The structure is shown in section 26F after the mask and etching are completed. Figure 26F shows a cross-sectional view after the steps according to step 26]). Figure 6G is a cross-sectional view after the intermediate steps according to step 26 £. <... Constructing the mask and etching is completed. Figure 26H is a cross-sectional view showing the steps following Step 26 {? &lt;… constructed on the completion of the mask and etching 2 6 I picture shows the structure according to the steps such as the 2 β ci and the formation of a focusing structure Fig. 26J on the completion of the mask and etching shows the section according to 26 / view. The other steps and the formation of a focusing structure, the structure is formed in the cover of Yuancheng, and the rest is shown in Figure 26K. * Shown according to No.261 ^ = surface view. Section view after waiting for steps. The structure is completed after the mask and etching are completed. Section 2L · The diagram is a cross-sectional view after the steps according to Section 2]. ,,, ° structured in the cover of Yuancheng and the rest_ Figure 27 shows the formation of an electrode structure for a display device according to the present invention, which is used to form a 28A picture system in the example. Shows a cross-sectional view according to an embodiment. One of the boss boards on the back board includes a resist layer, a dielectric layer, a top electrode, and the back molybdenum layer and a dielectric layer. . Tier layer, chrome layer, one steam layer

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页 Page 24 V. Description of the invention (19) Figure 28β is a cross-sectional view according to one of the embodiments. The back plate has a bottom and a display on the back plate. The back plate includes a barrier layer and a dielectric layer. A gate comb electrode, and the back plated with a molybdenum layer and a dielectric layer. The vapor-deposited chrome layer, a vapor-deposited layer after completion of the mask and etching. Fig. 28C is a cross-sectional view showing the steps according to the knot in Fig. 28A. FIG. 28D is a cross-sectional view showing the surname broadcast— # 丄 ~ ,,, and verbally in the 28th section of the board after completing the steps such as setting the mo. Xana Thai and Fig. 28E are cross-sectional views after steps such as ☆ point w seedling according to the structure in 28C. 70mask and # 刻 Figure 28F shows a cross-sectional view after waiting for steps according to the structure in Figure 28D. Bone and Etching Fig. 28G is a cross-sectional view after completion of the structure according to 28E. &gt; ",,,,, .. Fig. 28H shows a cross-sectional view of the focus moxibustion completed according to the structure in 28F. Fig. 281 shows the structure after completion of the structure in 28G. Sectional view. Fig. 28J forming the remaining step shows a cross-sectional view after the etching according to the structure in 28H. Fig. 28K shows a cross-sectional view after the etching step according to the structure in 281. ^ Section 28L The drawing shows a cross-sectional view after the etching is completed according to the structure in No. 28J. ^ Of the 25th page 501159

V. Description of the invention (20) ㈣A is a metal al loy layer formed by depositing a multi-layer electrode such as a door 仏, 丄 f paper, and the like according to one of the embodiments. Section view. Figure 2 9B is a cross-sectional view showing the deposition of Yuancheng Yibao + Cui &amp; Figure 29C is a cross-sectional view of the hibiscus in Figure 29B before the removal of contaminants. Fig. 29D is a cross-sectional view showing the cleaning process, #-, main *, τ &lt;, ..., in Fig. 2C after the cleaning process. ^ Figure 29E is a cross-sectional view after the layer of photoresist is placed on the structure in Figure 29C. e Figure 29F shows the structure set up in 29E # (Pe ^ layer 〇f Photo.esiso, :: ^ ;; ^ The structure in the profile table ™ is viewed from the back of the plasterer, and the figure shows the basis Section 30 of a multi-level electrode in an embodiment shows the flow chart in accordance with the embodiment. The forming of the dry potential Figure 31A shows the shape points deposited during the in-position molding in accordance with an embodiment. Xi— 筮 A ® Human AB dry electrode is a cross-sectional view of a surface metal alloy layer. A barrier layer is not formed; 31A is a cross-sectional view on the structure. The figure shows the deposit of a second metal alloy layer on the 3ib

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5. Description of the invention (21) A cross-sectional view of the structure. The structure is used for the removal of contaminants. Figure 31D is a cross-sectional view shown in front of Figure 31C. The structure is provided with a photoresist layer cross-sectional view after the cleaning process. A photoresist pattern layer is provided on the structure. Fig. 31E is a sectional view shown in Fig. 31D. Fig. 31F is a cross-sectional view showing a layer after the layer of photoresist in Fig. 31E. Figure 31H is a cross-sectional view showing the structure in Figure 31G after the etching step. Fig. 31 is a cross-sectional view showing a multi-level quasi-electrode according to an embodiment. Fig. 32 is a flow chart showing the formation of a multi-level quasi-electrode according to an embodiment. Explanation of symbols 10, 102, 103, 104 110, 111, 112, 113 ~ step 11 ~ metal alloy layer; 14 ~ top electrode; 16 0 1 ~ gate structure; 1620 ~ 1621 ~ opening; 1653 ~ cone Material; 1 6 5 6 ~ opening;, 106, 107, 108, 109 f 1 2 ~ sandwich layer; 1 5 ~ passivation layer; 1 6 0 2 ~ passivation layer; 1 640 ~ chromium; 1 6 5 4 ~ dielectric material; 1 0 0 1 ~ gate layer;

1012-4065-PF; ALEX.ptd page 27 501159

1 802 ~ titanium layer; 1 8 11 ~ gate metal layer; 1 820- 1 82 1 ~ opening; 1 8 2 3 ~ bottom contact pad; 1 8 2 5 ~ recess; 1 8 2 6 ~ cone; 1 8 3 0 ~ passivation layer; 1 8 5 3 ~ cone material; 1856 ~ bottom contact pad; 1 8 91, 1 8 9 2 ~ structure 2 0 ~ gate metal; 1 8 1 0 ~ top electrode; 1 8 1 2 ~ titanium structure; 1 8 2 2 ~ top contact pad; 1 8 2 4 ~ polyimide; 1 8 2 6 ~ cone; 1 827 ~ focused raccoon metal; 1840 ~ network section; 1 854 ~ Dielectric material; 1 8 5 7 ~ top contact pad; 2 ~ metal alloy layer;

201, 202, 203, 204, 205, 206, 207, 208, 209 ~ step 2 1 ~ gate structure; 2 2 ~ block contact pads; 22 recesses; 2222, 2 223 ~ contact pads; 2 2 2 4 ~ poly醯 imine focusing structure; 2226 ~ cone; 2227 ~ focus grid metal; 2250 ~ dielectric material layer; 2252 ~ molybdenum structure; 2253 ~ cone material; 2254 ~ dielectric layer; 2256-2257 ~ opening; 23 ~ column Contact thallium; 2301, 2302, 2303, 2304, 2305, 2306, 2307, 2308, 2309, 2310, 2311 ~ steps; 24 ~ polyimide; 2401 ~ qianzhong indium layer; 2402 ~ evaporated molybdenum layer; 2403 ~ Sputtered molybdenum layer;

1012-4065-PF I ALEX.ptd Page 28 2422 ~ opening; 2424 ~ polyamide focusing structure 2 4 2 6 ~ cone material; 2440 ~ dielectric layer; 246 2463 ~ opening; 501159 5. Description of the invention ( 23) 2422 ~ contact pad; 2423 ~ bottom contact pad; 2425 ~ recess; 2430-2431 ~ indium structure; 2 4 4 1 ~ passivation layer; 25 ~ recess; 250 1,2502, 250 3, 2504, 25 0 5, 25 0 6 ~ steps; 2552, 2554 ~ sputtered hafnium layer; 2 5 5 3 ~ evaporated molybdenum layer; 2 6 ~ emitter; 26 ~ cone; 2600 ~ dielectric layer; 2 6 2 4 ~ focusing structure; 2 6 4 2 ~ contact 塾; 2643 ~ contact pad; 27 ~ focus grid metal; 2701, 2702, 2703, 2704, 2705, 2706, 2707, 2708 ~ step; 2727 ~ focus grid metal; 2823 ~ contact 塾; 2824 ~ Focusing structure; 2827 ~ focusing metal; 2830 ~ evaporated chrome layer; 2831 ~ evaporated molybdenum layer; 2832 ~ dielectric layer; 2900 ~ substrate; 2902 ~ metal alloy layer; 2904 ~ protective layer; 2906 ~ multi-layer 2908 ~ contaminants; 2910 ~ photoimaging materials; 3 ~ combination layer; 3002, 3004, 3006, 3008 ~ steps; 3100 ~ Substrate, 3102 ~ first metal alloy layer; 3104 ~ second metal alloy layer;

1012-4065-PF; ALEX.ptd Page 29

3106 ~ multi-layers; 3110 ~ photoimaging materials; 3202, 3203, 3204, 3206 ~ 4 ~ bottom electrode; 5 ~ resistive layer; '6 ~ dielectric layer. The embodiment is disclosed as above, but it is not intended for a craftsman, without departing from the refined decoration of the present invention, therefore, the scope of protection of the present invention is defined. Although the present invention has limited the present invention with better practice, anyone who is familiar with this god and scope, can make changes

Please refer to FIG. 1. FIG. 1 shows a method for forming an electrode structure of a display device according to an embodiment of the present invention, wherein step 101 refers to performing a metal Said the layer of gold &gt; child product. FIG. 2 shows a metal alloy layer 2 deposited on a glass panel 1. As shown in FIG. In this embodiment, the metal alloy layer 2 is an aluminum alloy, and the thickness of the metal alloy layer 2 is 50-5000 angstroms. In a specific embodiment, the above-mentioned alloy is mainly composed of aluminum (A1) and (Nd), and the titanium (Nd) concentration in the aluminum alloy is 0.5 to 6 atomic percent. In another embodiment, the (Nd) concentration of the alloy is 0.5 to 6 atomic percent, and the titanium (Ti) concentration is 0 to 5 atomic percent. _ Please refer to FIGS. 1 and 2 again. In another embodiment, the metal alloy layer 2 is a siiver alloy. The silver alloy includes silver (Ag) and surface (Pd) concentration. 5 to 2 atomic percent, with a copper (Cu) concentration of 0.5 to 2 atomic percent. In this example, the “(Nd) concentration in the aluminum alloy

501159 V. Description of the invention (25) is 0.5 to 6 atomic percent. In yet another embodiment, the silver alloy has a platinum (Pd) concentration of 0.5 to 2 atomic percent, and a titanium (Ti) concentration of 0.00 to 2.0 atomic percent. In another embodiment, the (Nd) concentration of the aluminum alloy is from 0.5 to 6 atomic percent, and the titanium (Ti) concentration is from 0 to 5 atomic percent. When the silver alloy is used as an adhesive layer, the silver alloy can improve the adhesion with the glass panel 1. In one embodiment, the thickness of the molybdenum adhesion layer is about 50-1000 Angstroms. Referring to FIG. 1 again, step 102 is performed by depositing a cladding 1 ayer 3. FIG. 3 shows the structure of the sandwich layer 3 after the deposition is completed according to FIG. 2. It can be seen from the figure that the sandwich layer 3 is directly placed on the metal alloy layer 2. In an embodiment, the sandwich layer 3 in FIG. 3 is made of molybdenum (M0) tungsten (W) alloy. In this embodiment, the thickness of the sandwich layer 3 is about 500-4000 angstroms, and the contact pad formed by the sandwich layer 3 can maintain stable and ideal electrical properties. Contact, while reducing the generation of bumps (hi 1 lock). The tungsten concentration in the molybdenum alloy of this embodiment is 5-30 atomic percent. Although the sandwich layer 3 formed by deposition is used in this embodiment, the present invention can also reduce the protrusions by using an aluminum alloy layer or a silver alloy layer without using the sandwich layer 3. Formed, at the same time, the aluminum alloy layer or the silver alloy layer can also be used to generate fairly ideal conductivity. In one embodiment, a diffusion barrier layer is formed. The diffusion barrier layer may be titanium, titanium nitride or titanium tungsten alloy (Utanium ^^).

501159 V. Description of the invention (26) Formed directly on the silver alloy. In one embodiment, the thickness of the diffusion barrier layer is about 500-200 Angstroms. It is important to note that the diffusion barrier layer may not include the above-mentioned sandwich layer. In one embodiment, the metal alloy layer 2 and the sandwich layer 3 are deposited by a single sputtering tool (single sputtering ing〇〇1), that is, by the single sputtering tool The metal alloy layer 2 and the sandwich layer 3 are sequentially deposited. More specifically, the glass panel i is placed in a sputtering chamber of the sputtering tool, and the metal alloy layer 2 and the sandwich layer 3 are sequentially deposited in the sputtering chamber. After Ik, the glass panel 1 is removed from the coin plating chamber. Compared with two separate sputtering processes in the conventional technology, the method proposed in this embodiment can effectively reduce the cost, increase the throughput (throughpass), and increase the yield. Whether the aluminum alloy or the silver alloy is adjacent to the sandwich layer system, the ideal conductive property can be obtained, and by this, the ideal conductive property system can be applied to the production of large flat displays. Compared with the conventional technology, in addition to preventing the formation of protrusions and avoiding the short-circuit phenomenon that may occur when using aluminum metal, it can also achieve flatness. Lamination and effective improvement Yield of production. Please refer to FIG. 1 again. Step 103 means performing masking and etching for $. : In the present embodiment, “Photoresist” is formed on the glass panel i in a deposition manner, and the photoresist is patterned.

After Ik, an etching process is performed on the glass panel 1 by a wet etching method, so as to obtain a desired row of electrodes (rww electrodes). Yu Yiyi

V. Explanation of the invention (27) According to the second 2: the structure is made by masking, "compared to the conventional dry ^ i., () The god of rafts because the present invention can be done in a single pattern step + and a single Complete the column of electrodes in the remaining steps, in addition to using the == one! 1 pattern step to complete &quot; You can also use the molybdenum cap (molybdenum cap) in the ^ ° 忖 to perform two can effectively reduce Production cost, increase material passing rate and increase product yield. Ύ U Because the present invention does not require the use of dry # engraving procedures for the formation of column electrodes 1 _ In addition to eliminating the related equipment for dry money engraving In the manufacturing process, no corrosion of the bottom aluminum layer is caused, and the glass panel I will not be damaged (for example, pinholes), and it is not necessary to perform a polymer strip process. 〇cess), which is helpful to increase the throughput and improve the yield. In one embodiment, the etching process will form angled edges. The etchant used in this embodiment Departments include nitric acid, phosp horic acid), acetic acid and water, so that the photoresist can be formed under the action of the etchant and an angled edge can be formed on the side of the bottom electrode 4. Under the effect of the angled edge It can obtain a uniform layered structure, and can reduce the brittle cracks that may occur during the forming process of each layer. Please refer to FIG. I. 'Step 104 indicates that a resistive layer deposition operation is performed. In pages 5A-5B In the figure, the resistive layer 5 is stacked on the bottom electrode 4, and the thickness of the resistive layer 5 is about 2000-4000 angstroms. In this embodiment, the resistive layer 5 is

1012-4065-PF; ALEX.ptd page 33 501159 Five invention descriptions (28) Layer 5 is made of silicon carbide (Sic) with a thickness of about 2000-4000 Angstroms / method can be by sputtering process or chemical deposition process To achieve the formation, it is subsequently performed by step 105 in FIG. 1 to deposit two 6 and the dielectric layer in one embodiment may be made of dioxin. In the present embodiment, 2 formed by dioxygen cutting is applied to the plasma-assisted chemical vapor deposition method (plasma enhaneed system chemical vapor dep〇siti〇n pr〇cess), and the shape of the company 6A-, Figure '6A-6B It is shown in Figure 5A. The example in the figure completes the first step in the township; the structure diagram after the deposition of the electrical layer 6. The step 106 of the product r η indicates that a metal alloy layer 11 is settled. The thickness of the metal alloy layer 11 is about 500-: 7. The 7AΓB diagram shows that the metal alloy layer 11 is deposited on the dielectric: Structure diagram, the metal alloy layer i, an alloy is formed in an embodiment. In a specific embodiment, the Ming alloy includes 1, a neodymium concentration of 0.5 to 2 atomic percent, and a titanium concentration of 0 to 5 atomic percent. Finished. In one of the 'this: metal alloy layer 11 includes silver, the concentration is 0.5 to 2 atomic percent, and the copper concentration is 0.00 to 2 atomic percent. When the silver alloy is used as-^. ^ Α • When it is an adhesive layer, the silver alloy can improve the adhesion with the glass panel 1. ^ ^, this m — Adhesiveness In one embodiment, the thickness of the molybdenum adhesive layer is about 500-1 000 Aye.

501159 V. Description of the invention (29) After the product, the metal alloy layer 11 is an embodiment of the (Mo) Yan (W) alloy (50 0-40 00 Angstroms), and it is stable and ideal. 'The present invention can also reduce or produce a silver alloy layer on the silver alloy layer by diffusing a silver alloy layer on the silver alloy, as shown in the figure. The sandwich layer 12 is directly In the above figure, the sandwich layer 2 in FIG. 3 is made of molybdenum. In this embodiment, the thickness of the mismatch layer 2 is about and formed by the sandwich layer 12. The contact pads can be electrically contacted, and at the same time, the shape of the protrusions can be reduced. In the embodiment, the sandwich layer 12 formed by deposition is used. The aluminum alloy layer is less convex when the sandwich layer 12 is not used. The formation and formation of the object can also be achieved by the aluminum alloy layer with a relatively ideal conductivity. In the structure of an embodiment and a diffusion resistance layer to replace the sandwich layer 丨 2. In an implementation system using titanium, nitride Titanium or titanium-tungsten alloy, etc. are formed directly, and the thickness of the diffusion barrier layer is about 500-2 00. In the example, the metal compound The deposition of the gold layer 11 and the sandwich layer 12 is achieved by a single sputtering tool. Compared with the conventional technology, the method proposed in this embodiment is t '2 separate sputtering procedures. It can reduce the cost, increase the throughput of the material and increase the yield.

Referring to FIG. 1, step 108 indicates that the upper electrode is formed by masking and etching steps, and the electrode is formed by a wet etching method in this embodiment. Figures 9A to 9β show the structure of the structure in the root yA 8B after the forming of the top portion 4 is completed by the masking and etching steps. Etchant used in an embodiment

1012-4065-PF (.ptd Page 35 501159 V. Description of the invention (30) Ξ =: Phosphoric acid, acetic acid and water, so that the button engraving agent can be made brittle under the action of angled edges It is possible that the vertical layers in the forming process do not adopt aluminum δ gold or rhenium-silver alloy adjacent to the sandwich layer, which can have electrical properties', and from this-ideal conductive properties = production 1. Compared with the conventional technology, Ben = can ... the formation of protrusions and avoiding the use of Shao metal Second: the phenomenon of the sister road can be obtained when the @ @ can also have a flatness: layer and effective In addition, since the present invention can complete the row of electrodes 1 in a single patterning step and a single etching step, there is no need to use two separate pattern steps and two stepping steps. #This can effectively Reduce production cost, increase material throughput and increase product yield. Please refer to step 109 in FIG. 1. This step means forming a passivation layer 15 by a deposition step. In an embodiment, the Passivation layer 15 is a plasma-assisted chemical gas Formed by phase deposition method. Please refer to Figs. 10A-10B. Figs. 10A-10B show the structure of the structure shown in Fig. 9 A 9 B after the deposition of the passivation layer. Step 1 of Fig. 1 is a step of performing masking and etching. Figs. 11A-11B show the structure shown in Figs. 10A-10b. In order to form an opening (〇peningS) lH8 structure diagram, the passivation layer 丨 5 series outside the opening 17-8 position

501159

Extends to the upper side of this top electrode 14. Heli is formed by the deposition method of step 111 in FIG. 2 with the V-electrode 问 m), and in one embodiment, a road is used as the gate metal. Figures 12A-12B show the structure shown in Figures 11A-11B in forming the gate metal 20 by deposition. In another embodiment, the forming of the electrode metal 20 is first formed by a deposition method—a titanium layer, and then a two-layer method is used to form a chromium layer on the titanium layer, and the passivation layer 15 is formed on the titanium layer. The top electrode 14 is protected during the deposition process. For details, please refer to step 112 in FIG. 1 ′ This step means that

Carving steps to form a gate structure. Figures 13A-13B are structural diagrams showing the structure shown in Figures 11A-11B after forming the gate structure 21 by masking and remaining steps. Among them, the column contact pad (column contact pad) ) 22 series can be used to touch the top electrode! 4. The top electrode 14 is protected by the passivation layer 15 during masking and etching of the gate structure 21. In a general process, a cathode structure can be formed by step 11 3 in FIG. 1. Figures 14A-14B show a complete cathode structure according to an embodiment. A cavity 221 and an emitter 26 can be formed in the cavity 221 by a general process step, and a mask and an etching step are used. It is used to extend the opening 16 in FIG. 11B so that the row contact pad 23 can be exposed. In addition, the focus structure 24 and the focus waffle metal 27 can also be formed through general process steps. In one embodiment, the focus grid metal 27 is formed of aluminum. In this embodiment

1012-4065-PF; ALEX.ptd page 37 501159 V. The process steps in the invention description (32) include ion bombardment, cavity etch, and cone deposition. deposition), dielectric "dielectric deposition", masking and etching of dielectric layer, polyimide deposition, etc. During the formation of the cathode structure, the top electrode 丨 4 is protected by the passivation f 1 5, so that the top electrode 丨 4 can be prevented from being destroyed in the general process steps, and the short circuit of the top electrode 丨 4 can be prevented. The generation of depressions. In addition, since the top electrode 丨 4 is protected by the passivation layer 丨 5, column shorts can be prevented from being formed in the frit seal regiron. In this embodiment, The exposure of the metal with little know-how can also reduce the short-circuit phenomenon of blocking the metal with respect to the t. Please refer to FIGS. 15a-f. The figure 15a_i is not used to form a plane i: 二 〜ί: The second embodiment of the electrode structure method. Step 101 is the deposition of an alloy layer, followed by step 102. I Qiu Zhiji. Step 10 is a step of forming a mask and an etching step. Step m is a step of depositing a samarium-resistive layer. Step 10 is a metal man and a dielectric layer. Subsequently, the pore product procedure of a tα gold layer is defended by 禆 i 隹, and then deposited by step 107. Step 108 means that masking and etching are all the same as step 10 in the FI FI + ea example. The 08 series is the same as steps 10 in step 108 and 10 in step 1 to form A_9B. The picture shows the sting hunting. Mysterious steps Please refer to Fig. 15, step 11 i sound _ / Which 1 i i form does not form a gate by deposition

V. Description of the invention (33) Electrode metal, and then B p -gate junction $. ^ Mask by step 112, the step of engraving the last name is Qh. Refer to Figures 16a-b. Figures I6a-b are shown in Figure 9-9b. The steps 11 to 12 are used to form the gate structure 1601 ^ In the conventional embodiment, the gate structure 1 60 1 is made of chromium ^. ′, ’And the inter-electrode structure 1601 may also be formed of a chromium layer deposited with a titanium layer. Step 10 9-110 in the figure indicates that a passivation layer is formed by deposition and masking. Figures 16c-16d show the structure in Figure a + and the passivation layer 1 6 0 2 2 L !! is patterned in steps 10 9-11. In one embodiment, the passivation layer 1 602 is formed by a nitride-assisted chemical vapor deposition method, and a plurality of openings 1 6 2 0-1 6 2 1 are formed in the passivation. The opening 1 The 6 2 0-1 6 2 1 series extends through the hafnium passivation layer 160 2, and the passivation layer 160 2 extends to the upper side of the gate structure 1601 except for the positions 1620-1621 of the opening. The cathode structure can be completed by step 113 in FIG. 15. 16E-16J shows a method for forming a cathode structure according to another embodiment of the present invention, wherein 16E-16F shows a structure shown in 16C-16D shown in the etching The structural diagram after forming the recessed part 25 in a step. The method is to first perform an etching step, and use a vapor deposition method to form a chromium layer on the structure after completing the deposition of the cone material and the deposition of the dielectric material layer. In one embodiment, the thickness of the chromium layer is about 50%. 〇Angels. Subsequently, patterning and worm-carving were performed on the structures of Ming and Qing to form the structure as shown in Figure 16 G _ 1 g. The structures shown in Figures 16G-16 (a) include a dielectric material 16 54, a cone 26, a cone material 1 653, and chromium 1 640. In one embodiment,

501159 V. Description of the invention (34) The cone material 1 653 is formed by vapor-deposited molybdenum layer, and the cone 26 should be formed of other materials. Subsequently, a plurality of openings 1 6 5 6 are formed by using a mask and an etching step to expose a part of the bottom electrode 4 so that the bottom contact pad 23 can be formed. After the polyimide 24 and the focus grid metal 27 are formed, the structure can be subjected to dielectric removal steps and halo etch. A complete cathode structure is shown in Figures 16 I-16 J. The cathode structure includes polyimide 24, focusing grid metal 27, and top contact pad 22. During the formation of the cathode structure, the top electrode

The metal structure 1 60 1 and the passivation layer 5 are protected. In this way, the top electrode 14 can be prevented from being damaged in the general process steps, and the button and the depression of the top electrode 14 can be prevented. In addition, since the top electrode 4 is protected by the passivation layer 15, a short circuit can be prevented from being formed in the frit sealing area, and the present embodiment has less exposure than the conventional technology. Metal can also reduce short-circuiting with respect to the focusing grid metal.

凊 Refer to FIG. 17, which shows another method of forming an electrode structure for a flat display device. Step 201 refers to forming a bottom electrode on a substrate, and then a resistive layer and a dielectric layer are stacked on the bottom electrode by step 2002-203. In one embodiment, the step 202- 02 is exactly the same as the step 101- 丨 in the first figure. Referring still to FIG. 17, step 204 is used to deposit an interrogation metal, and the gate metal system in the embodiment can be formed using chromium. An upper electrode ’can be formed in step 205 in an embodiment.

501159

On the other hand, the pole system can be formed by using steps 106-108 in Figs. In a real yoke example, the upper electrode is formed by depositing a metal alloy layer (aluminum alloy), masking and etching the metal alloy layer. In a specific embodiment, the thickness of the metal alloy layer is about 500-5000 angstroms, and aluminum (Ai) and “(Nd)” are included in the metal alloy layer, where “(Nd) / Chen is 0.5. To β atomic percent. In another embodiment of aluminum. The concentration of osmium (Nd) in gold is 0.5 to 6 atomic percent, and the concentration of titanium is 0 to 5 atomic percent. Figures 18A-18B are structural diagrams showing the completion of steps 20b-205. The structures in Figures 18A-18B include a bottom electrode 4, a barrier layer 5, and a dielectric layer disposed on the substrate 6. The gate metal layer 1801 and the top electrode Jing Dan 翏 弟 1 "Figure, through the mask and etching steps of step 20 6, select the gate metal layer in Figures 18A-18B 丨 801 After the photoresist is deposited on the backplane, the photoresist can be patterned, and then the backplane is etched by etch-back.

The diagram is a structural diagram of the structure shown in Figs. 18A-18B after the step of forming the gate metal structure 1811. Step 207 of FIG. 17 shows that the passivation layer in one embodiment may be made of silicon dioxide, and the method is performed by plasma-assisted chemical vapor deposition. / 、 Shape Step 208 in Fig. 17 indicates that the mask is performed. Ding this = 18E-18F Fig. M18F is shown in the first victory diagram; j ,,,. The structure has multiple openings formed by deposition, masking, and etching steps.

501159 V. Description of the invention (36) 1 8 20-1821 Structure diagram of a passivation layer, in which the opening 18201821 extends through the passivation layer 1 8 3 0 and except for the opening 丨 8 2 〇-丨The passivation layer 1 830 outside the 8 2! Position extends to the upper side of the top electrode 1810. After fk ′, the formation of the cathode structure can be completed by step 209 in FIG. 17. Figures 18G-18N show another method of forming the cathode. The recess 1 825 in FIG. 18G is formed by a mask and an etching method, and after the deposition of the cone material and the deposition of the dielectric material layer, a chromium layer is deposited by evaporation. It is formed on the above structure, and then patterned and etched to form the structure as shown in FIG. Figures 181-18J include a cone 1826 and a structure 1891, 1892. The structure 1891, 1 892 includes a cone material 1 853, a chromium material 1840, and a dielectric material 854. Subsequently, a plurality of openings are formed through the mask and etching steps, and the parts of the bottom electrode 4 are exposed through these openings, so that the bottom contact pads MM as shown in Figs. 18K-18L can be formed. After the polyimide and focused grid metal have been formed, a dielectric removal step and a ring etch can be performed on the structure. In the 18m-i8N figure, the "table cathode structure" includes a top contact 塾 18 7, a focusing structure 1 824, and a focusing grid metal 1 827. On the other side, the figure is not opened: right) t The structure 1891 is formed only by the mask and the etching steps, and the structure 1 8 9 2 is not formed. During the molding, 'the top electrode 181 ° is through the blunt: Γ This can prevent the top electrode 1810 from being damaged during the process steps, and can prevent the short circuit and depression of the top electrode 1810. Page 42-1012-4065- PF; ALEX.ptd 501159 V. Creation of invention description (37). In addition, since the top electrode 18 1 0 is protected by the passivation layer 18 3 0, a short circuit can be prevented from being formed in the frit sealing area, and the present embodiment has the advantages compared with the conventional technology. Less exposure metal can also reduce the short circuit of the column relative to the focus grid metal. Please refer to FIG. 19, which illustrates another method for forming an electrode structure for a flat display device. Step 20 1 indicates that a bottom electrode is formed on a substrate, and then a resistive layer and a dielectric layer are deposited on the bottom electrode by steps 202-203. Qing still refer to FIG. 19 'Step 2 0 4 is used to perform the gate metal deposition operation, and in an embodiment, the gate metal system can be formed by chromium 0 in step 250 in FIG. 19 It is used to perform a deposition operation of a titanium layer, and the top electrode is formed in step 205. In this embodiment, the top electrode is made of aluminum alloy, and the thickness of the metal alloy layer in an embodiment is about 500-5000 angstroms. A figure 18a-18b shows the I :: complex i after the completion of steps 20b, 2050, a titanium layer 1 802, and a plurality of top electrodes 1810 :: Example t, bottom electrode 4 is used as a column electrode ^ ^ ^ ^ f 〇 ^, Γ, is used as a column electrode for the column electrode ', and J is made by a plurality of top electrodes 1810. «Refer to Figure ig again, you can choose by step Perform the μ operation on the 20A_2 and the name of the etching step, and then ^ Titanium layer Satoshi and the gate will be deposited after the first resistance is deposited on the back plate.

501159 V. Description of the invention (38) The photoresist is patterned, and then the back plate is etched by wet etching. Figures 20C-20D are the structural diagrams of the structure shown in Figures 20a-20B after the mask and etching steps are performed to form the gate metal structure 811 and the titanium structure 1 8 1 2. '… Step 20 7 in FIG. 19 indicates that a passivation layer is formed by a deposition method. In an embodiment, the passivation layer may be silicon dioxide, and the straight formation method may be plasma-assisted chemical vapor deposition. Method to proceed. / Please refer to FIG. 19, step 208 represents performing the masking and etching steps. Please refer to FIGS. 20E-20F. The structure shown in FIG. 20c_2D has a plurality of openings formed through deposition, masking, and etching steps. One of ^ 20 is a structural diagram of layer 1 830. The opening The 1820 series extended through the purification layer 0. In this embodiment, the recess 1 825 is formed by ring-type etching. It can be seen from 183 to 1 that the purification layer except the position of 1 820-1 82 1 at the opening is above the top electrode 1810, and is tied in the subsequent process. The passivation layer 1 830 is used to protect the top electrode. 181〇 is not destroyed. 20G 1 can complete the cathode structure by step 209 in the same figure. Figure Λ shows the method of forming in another embodiment according to the present invention. The method is to perform the _ step first, and use the "structure", a material, a product, and a dielectric material layer after the deposition of / 9 'Subsequent patterning and post-cutting on the structure to form the figure 20G-20Η: ^ 士士 suspected philosopher Jieju Cup ancient eight belts, the middle structure. In Figures 20G-20H The area h / 1 is shown as 1 854, cone 1 8 26, cone material 1 853, and chromium 1 ° 85; Department:.: 1: &quot;! / "11161110184. . In the embodiment, the ‘cone material’ is formed by a molybdenum layer of η, and the cone 26 is preferably made of other materials.

To form. Subsequently, a plurality of openings are formed on the bottom electrode 4 by the mask etching to form a plurality of openings 1 656, and a plurality of openings 1 656 are exposed with a knife region of 20I-20J ® ^ ^. The bottom contact pad 1 823, topped with polyimide and polysacral contact pad 1 822. After the formation of the dielectric shifting sigma metal by 70%, the structure can be completed. Type etching. In the figure 20K-20L, the grid is: il82 ;. 'The far-cathode structure includes polyimide 1 824 and focusing protection in the negative layer 1 830. If this embodiment is implemented at the same time, please use one of the electrodes to deposit on a dielectric layer. Polar structure protection, destruction,. In addition, this example can be used to reduce the product of the 21st electrode junction substrate during the molding process, so that it can be avoided and can be prevented, because the top is prevented from being denser than the frit compared to the conventional technique to the polygraph. Figure 21 shows another method of constructing the structure. Subsequently, the top electrode 1 8 1 0 above the bottom electrode is short-circuited by the passivation top electrode 1 8 1 0 in the general process 歩 5 Hai top electrode 1 81 〇. A short circuit is formed in the sealed region of the 5's electrode 1 81 0 by the passivation layer 1 5 0, and the Panxia system has a short circuit phenomenon of less exposed metal and focal grid metal. The display is used to form a flat display. Step 201 means forming the bottom. Steps 202-203 put a resist layer and a

_ Still referring to FIG. 21, step 204 is used to perform the gate metal deposition operation 'and the gate metal system in one embodiment can be formed by chromium>, and then by step 205 To form the top electrode. In this embodiment, the top electrode is made of aluminum alloy. The steps 205 to 205 in one embodiment are exactly the same as the steps 205 to 205 in FIG. 17. Please refer to Figures 22A-22B for the structure shown in Figures 22A-22B.

5ϋ1159

Steps 20 1 -205 are used to form a substrate 1 having a gate metal layer 1801 and a plurality of top electrodes 1810. A dielectric layer 6, a resistive layer 5, and a bottom electrode 4 are stacked on the substrate 1. . / Refer to FIG. 21 again. Step 20 7 indicates that a purification layer is formed by a deposition method. In the embodiment, the passivation layer can be made of stone dioxide, and the formation method can be made of plasma. Auxiliary chemical vapor deposition method is performed. Please refer to FIG. 21 again, and then perform masking and etching steps by step 26. In one embodiment, two etching steps (first etching and second etching) are used to separately form the passivation layer (first etching) and the gate electrode __ metal layer (second etching) Through the first mask and the etching step, penetrating etching is performed on the passivation layer and the gate metal layer. Figures 22C-22D are structural diagrams of the structure shown in Figures 22A-22B in which the gate metal structure 1811 and the passivation layer 1830 are formed through deposition, masking, and remaining steps. Subsequently, the formation of the cathode structure can be completed by step 209 in FIG. 21. Figures 22E-22N show another method of forming the cathode. A dielectric material layer 2250 is deposited on the structure shown in Figs. 22C-22D, and then the dielectric material layer 2250 is patterned and etched to form the structure shown in Figs. 22E-22F. In the above-mentioned insect etch process, the passivation layer 1 830 is used as an etch stop, and then a cavity etch is performed. Figures 22G-22H are structural diagrams showing the recesses etched in the structure of Figures 22E-22F after the completion of the recesses 1,825. Subsequently, a molybdenum layer is deposited by sputtering deposition, and

1012-4065-PF; ALEX.ptd page 4β: &gt; un:) y

A pyramid material is deposited on the indium layer. Yu_Implementation = steaming by turning over, and the cone material: salute product and the above cone material should be formed using other materials. Structure not shown in the picture.蛀 ## 2252 &gt; |, Μ2226. |, H ## 2253 ^^ t ^ 2254 ^ pii

The post-finish step is followed by the opening to form an opening like the 22K-22L picture, "a 2257. Please refer to the 22M-22N picture, and then the structure is subjected to a media removal step and a ring-type etching to form a plurality of contact pads 2222. 2223, and the polyimide focusing structure 2224 and the focusing grid metal 2227 are molded. During the forming of the cathode structure, the top electrode 丨 81 〇 is protected by a passivation layer 18 3 0, so that the top electrode 丨 8 can be avoided.丨 〇 In the general process steps, Chinese is destroyed, and the short circuit and depression of the top electrode 丨 8 丨 〇 can be prevented. In addition, since the top electrode 1810 is protected by the passivation layer, it can be avoided from the frit A short circuit is formed in the sealed area, and in this embodiment, compared with the conventional technology, there is less exposed metal, and at the same time, the short circuit of the short circuit with respect to the focusing grid metal can be reduced. Please refer to FIGS. 23-24. Figures 23-24 show another method for forming an electrode structure for a flat display device. Step 201 shows forming a bottom electrode on a substrate, and then borrowing Step 022_2 03 is to deposit a _ 'layer and a dielectric layer on the bottom electrode. After a gate metal is formed by the deposition method in step 204, the step 2 can be used for the top The electrode is formed. Then, an etching step of step 206 is performed to form the electrode.

1012-4065-PF; ALEX.ptd page 47 V. Description of the invention (42) &quot; ------- Gate junction, and a recess is formed by etching step 23 〇 丨. In this embodiment, the top electrode is formed by a step of forming a metal alloy layer and a step of etching, and in one embodiment, the thickness of the metal two is about 500˜500 angstroms. In a specific embodiment, the metal a gold layer includes indium (A1) and beryllium (Nd), wherein the concentration of Nd is 6 atomic percent of you. In another embodiment, the titanium (Nd) concentration in the aluminum alloy is from 0.5 to 6 atomic percent, and the titanium (Ti) concentration is from 0 to 5 percent. First, please refer to FIGS. 24A-24B, and FIGS. 24a to 24b are structural diagrams of the substrate 1 after completing steps 20 to 206. The substrate 1 includes a bottom electrode 4, a barrier layer 5, a dielectric layer 6, and a gate metal. The layer 1811 and the top electrode 1810, and a recess 2425 is formed in the etching step 2301. Please refer to FIG. 23 again, and then deposit a sputtered molybdenum layer by step 2302. After completing the deposition of the evaporated molybdenum layer by step 2303, the molybdenum layer can be deposited by step 2304. Please refer to Figures 24C-24D. Figures 24C-24D show that the sputtered molybdenum layer 240, the evaporated molybdenum layer 2402, and the sputtered hafnium were completed in steps 2302-2304. The structure diagram after layer 24〇3 and the cone material 2426. Please refer to FIG. 23, and then perform the masking and remaining steps by step 2305. The 24E-24F diagram is shown in 24C-24D The structure in the figure is a structure diagram after forming a molybdenum structure 24 30-243 1 and an opening 2422 through a mask and an etching step, wherein the opening 2422 extends to the top of the bottom electrode 4. In an embodiment The masking and etching step 2305 includes two separate masking and etching steps, of which the first masking and etching step is used

501159 V. Description of the invention (43) An etching operation is performed on the sputtered molybdenum layer 2403, the evaporated molybdenum layer 2402, and the sputtered indium layer 2401, and the second mask and etching steps are used for the interface. The electrical layer 6 and the resist layer 5 are etched to form openings 2 4 2 2. Referring to FIG. 23, step 2306 is used to perform a dielectric layer deposition operation. In one embodiment, the dielectric layer is made of silicon dioxide. Step 2307 of FIG. 23 is used for depositing a passivation layer. In the conventional additions, the purification layer is made of a nitride-assisted chemical gas in a plasma-assisted chemical gas.

Formed by phase deposition. Please refer to Figs. 24G-24H, which is a diagram showing the structure shown in Figs. 24E-24F after the deposition of the dielectric layer 2440 and the passivation layer 2 4 4 1. Please refer to step 2308, and then perform the etching and deposition steps in step 2308. The openings 2450-2452 formed by steps 2308 in Figures 24I-24J extend through the passivation layer 2441.

Step 2309 is used to form a focusing structure, and then step 2310 is used to perform the dry engraving operation. Please refer to FIG. 2 4 K-2 4 L. Step 2 3 0 9-2 3 1 0 is used to form the polyamide focusing structure 2424 and the opening 246 1-2463, wherein the opening 2461-2463 extends through the The passivation layer 2440 can extend to the top surface of the bottom contact pad 4 through the opening 2462 to form a bottom contact pad 2423. Please refer to FIG. 24M. In this embodiment, the focusing grid metal 2727 is formed on the polyamide focusing structure 2424. Refer to Figures 24M-24N. Step 2311 is used to extend the openings 246 1 and 2463 in Figures 24K-24L · through the sputtered molybdenum layer 2403 and the evaporated molybdenum layer 2402, so as to form Contact pad 2422, and under the etching effect of step 2311, the cone material

501159

The sputtered molybdenum layer 2 40 3 is removed. In Figures 23-24, the top electrode 1810 can be protected by the dielectric 2 440 and the passivation layer 2441 to prevent damage during the process. In addition, because the top electrode 14 is protected by the passivation layer 5, short-circuit blocking can be prevented from forming in the frit sealing area, and the present embodiment has less than the conventional technology. Exposing the metal can also reduce the short circuit of the column relative to the focusing grid metal. / Less Refer to FIGS. 25-26, which illustrate another method for forming an electrode structure for a flat display device. Step 201 in FIG. 25 indicates that a plurality of bottom electrodes are formed on a substrate, and then a resistive layer and a dielectric layer are deposited on the bottom electrodes by steps 202-203: step 204 is used The gate metal is deposited. In one embodiment, the gate metal can be formed by chromium, and then a gate structure and an etching step in step 206 are used to form a gate structure. Step # 201 is performed to form a recessed portion. Subsequently, a first sputtering forging layer, a vapor-deposited molybdenum layer, and a second sputtering-molybdenum layer are formed by deposition in steps 230 2-2 304. In one embodiment, steps 20 1 -206 and steps 230 1 -2304 are exactly the same as steps 20 1 -206 and steps 230 1 -2304 in FIG. 23. Referring to FIG. 25, step 2501 is a step of selectively masking and etching the sputtered molybdenum layer and the vapor-deposited molybdenum layer. In this embodiment, the masking and etching steps of step 250 1 can completely remove the sputtered molybdenum layer and the vapor-deposited molybdenum layer on the area where the top electrode is intended to be stacked, that is, in The etching step 2 5 0 1 in this embodiment is also the same for the molybdenum structure.

1012-4065-PF: ALEX.ptd

501159 V. Description of the invention (45) 2431 Carry out the removal operation. Please refer to FIG. 25. Step 2502 is used to deposit a dielectric layer. In one embodiment, the passivation layer may be formed using silicon dioxide. See FIGS. 26A-26B and 26A-26B. The figure shows the structure of one of the substrates 1 after completing steps 2501-2502 in FIG. 25. The substrate 1 includes a dielectric layer 2600, a molybdenum layer 2401, a vapor-deposited molybdenum layer 2402, and a sputtered molybdenum layer 2403. Can then form a cone material 1810, and the dielectric

The gate metal layer 1 8 11 and the top electrode 丨 8 丨 are stacked on the layer 6 and the resistance layer 5 and the bottom electrode 4. Say

Please refer to FIG. 25, and then perform the masking and engraving steps by step 2305. In an embodiment, the masking and etching step 2503 includes three masking and etching steps (the first masking and etching, the second masking and one moment, and the third masking and etching), wherein The first mask and etching are used to form the structure in Figure 26C-26D, the second mask and etching are used to form the structure in Figure 26E-26F, and the third mask and etching are Used to form the structure in Figures 26G-26H. Please refer to FIGS. 26G-26H. The first mask and the etching are used to form an opening, and the opening extends to the bottom electrode 4 so as to form a contact pad 2642. In this embodiment, the first and second masks and etching are dry etching, and the third mask and etching are wet etching. In addition, the present invention can also be applied to form the structure shown in Figures 26G-26H by other masks and time-cutting methods. Step 2504 is used to form a complex focusing structure 2624. Please refer to Figure 261. The focusing grid metal 2627 is formed in the focusing structure "^ 之

1012-4065-PF; ALEX.ptd page 51 501159

5. Description of the invention (46) on 'and further etching operation is performed on the remaining dielectric layer by the etching step of step 2505 in FIG. 25. In one embodiment, the etching step 2504 is performed by a dry etching method. Please refer to FIGS. 26I-26J. After the focusing structure 2624 is formed in step 2504, the contact pad 2642 is formed in step 2505. As shown in FIGS. 26K-26L, in this embodiment, the vapor-deposited molybdenum layer 2553, the sputtered molybdenum layers 2 552, and 2 5 54 are removed in step 2506.

The top electrode 1810 can be protected by the dielectric layer 2600 to prevent damage during the process, and the top electrode 1810 can be prevented from forming an improper short circuit and open circuit. In addition, since the top electrode 1810 is protected by the dielectric layer 2600, the formation of a short circuit in the frit sealing area can be avoided, and the present embodiment has less exposure than the conventional technology. At the same time, 'metal' can also reduce short-circuiting with respect to the focusing grid metal. Please refer to Figs. 27-28. Figs. 27-28 show another method for forming an electrode structure. Step 201 in FIG. 27 indicates that a bottom electrode is formed on a substrate, and then a resistive layer and a dielectric layer are deposited on the bottom electrode.

The deposition operation of the polar metal cow is followed by a step-gate structure and a coin = 3 cover. The screen is: ^ In the embodiment, step 2 (Π-206 and 230 1 are completely in phase with Zan concave. #。 In step 20, 2206 and 230 1. f-Wang Xiangyu in Figure 23, please refer to Figure 2 7 Step 2 70 1 is used to form a steamer chromium

501159 V. Description of the Invention (47) Layer 'and deposit a vapor deposition layer in step 2702, and then form a dielectric layer by depositing in step 2703.凊 Refer to Figures 28A-28B 'Figures 26A-26B are structural diagrams of one of the substrates 1 after completing steps 20 1 -202, the substrate 1 includes a bottom electrode 4, a barrier layer 5, a dielectric layer 6, a gate The electrode metal layer 1 8 1 1 and the top electrode 1 8 1 0 are formed in the remaining step 2301 to form a recess 2425. Steps 2701-2703 are used to form the vapor-deposited chromium layer 2 8 30, the vapor-deposited molybdenum layer 2 8 31, and the dielectric layer 2832. Say

Please refer to FIG. 27 again, and then perform step 2704 to perform the mask and # etch steps. Please refer to FIGS. 28C-28D. In step 2704, the dielectric layer 2832, the vapor-deposited molybdenum layer 28 31, the vapor-deposited chrome layer 2830, and part of the top electrode 1 8 1 0 are etched by etching. . Step 2705 is used to perform an etching operation on the dielectric layer 6 and the resistive layer 5 again, so as to form a structure as shown in FIGS. 28E-28F, and through step 2706 for the bottom electrode 4 The exposure operation is performed at a part of the position to form a contact pad 2823. +

Still referring to FIG. 27, step 270 6 is used to form a focusing structure. Referring to FIG. 28G-Η, a cluster 2 824 is formed in FIG. 28G-H, and a right focus grid metal 2827 is formed on the focusing structure 2824 in FIG. 28G. Referring to FIG. 27 again, step 2707 is used to perform the etching operation. Referring to FIGS. 28I-28J, step 2707 is used to remove the dielectric layer 2832, and to partially remove the dielectric layer 6. Step 2708 is used to etch the above structure again to form

1012-4065-PF; ALEX.ptd page 53

501159 V. Description of the invention (48) A complete electrode structure. Figures 28K-28L show the structure in Figures 28I-28J after completing step 2708. In this embodiment, step 2708 is an etching operation to remove the vapor-deposited molybdenum layer 2831. During steps 2704-2708, the top electrode 1810 is protected by the vapor-deposited chrome layer 2 8 3 0. This prevents the top electrode 1 from being damaged during the general process steps and prevents the top electrode from being damaged.丨 8 丨 〇 short circuit and the generation of depressions. In addition, since the top electrode 丨 8 丨 〇 is protected by the vapor-deposited chrome layer 2830, short-circuit blocking can be prevented from forming in the frit sealing area, and the present embodiment has less than the conventional technology. The exposure metal can also reduce the short circuit of the column relative to the focusing grid metal. Figures 2 9 A-2 9 are cross-sectional views of a metal alloy layer formed by a multi-level quasi-electrode deposited during molding according to an embodiment. The multi-level quasi-electrode system proposed in this yoke example can be used as a top electrode, a bottom electrode, a gate electrode, a blocking electrode, a row of electrodes, or an electrode of its nature. Referring to FIG. 29A, first, a metal, human gold layer 2902 is deposited on the substrate 2900. In this embodiment, the gold alloy layer 2902 is composed of aluminum and niobium, and the metal alloy layer 2902 ^ &gt; has a thickness of about 2500 angstroms. In addition, the metal alloy ^ proposed by the present invention can also be made by using a thickness value larger or smaller than this embodiment, or by using a metal. Please refer to FIG. 29B. After the completion of the protective layer 2904 shown in FIG. M, the metal alloy layer 2902 is deposited to form a layer 2906. In one embodiment, the protective layer 2904 is made of pins and cranes.

501159 V. Description of the invention (49), and the protective layer 2904 has a deposition thickness of about 12,000 Angstroms. The present invention is disclosed in the preferred embodiment as above, but it is not intended to limit ..., the protective layer proposed by the present invention may also adopt other thickness values greater than or less than this thickness value, or by other metals Production. Please refer to FIG. 29C. In the manufacturing process, the pollutant 2908 is passed on the multi-layered object 2906, and on a specific occasion, the reed 2906 will be written to the water model (^ 1; 6] ^ 龙 1 ^ 3) pollution, in addition to this dye will cause unnecessary peroxidation in the subsequent etching process, reducing the controllability of the subsequent etching process (c 〇ntr 〇1 1 abi 1 ity) and the structural integrity of the multi-layer structure formed by it, and will seriously affect the formation of the electrode in the etching process, and `` opening '' may be formed in the structure of the multi-layer electrode ) ”Or the occurrence of cracking phenomenon. Please refer to FIG. 29D. In this embodiment, a cleaning process is used to perform oxidation-inducing contaminants on the multi-layered article 2906. Clearing. In one embodiment, the multi-layered article 2 906 can be placed in a chemical solvent to perform a cleaning process. In a specific embodiment, the chemical / cereal used for the cleaning process is selected from N Η * 0 Η, HF, TMA Η It can be seen from Fig. 29D that the structure does not contain oxidation-induced pollutants in the mass, so there is no need to perform a general peroxide treatment in the subsequent etching process. Although the present invention proposes The chemical solvent is selected from the group consisting of NH4OH, HF, and TMAA, but it is not intended to limit the present invention, and the present invention may also use other chemical solvents to perform the cleaning process.

(Ptd p. 55 501159

V. Description of the invention (50) Please refer to FIG. 29E. After the multi-layered object 2906 has completed the cleaning process described above, the surface of the multi-layered object 2 9 0 6 has good poison occupation and uniform shape. Therefore, when a photoimagable material 2910 (eg, a photoresist) is formed on the multi-layered object 2 9 0 6 by deposition, the multi-layered object 2 9 0 6 and the The photoimaging material can achieve a quite ideal adhesion effect between 2 9 1 0, so in the embodiment, it can completely eliminate the problems caused by pollutants in the conventional technology. 0 Please refer to FIG. 29F. Only a part of the photo-imaging material 29 1 0 is deposited on the multi-layered object 29 06 in FIG. 29F, and its structure is performed by a masking and photoimagable material removal process. ) Please refer to Figure 29G. The multi-layered object 2906 shown in Figure 29G is obtained by performing an etching process on the structure in Figure 29F. The multi-layered object 2j06 is located in a part of the residue. The lower side of the light imaging material 291〇 The multi-layered object 2906 can be protected by partially remaining the photo-imaging material 29. That is, the etching operation is performed on the multi-layered object 29 under the photo-imaging material 2910 which is not provided with a partial residue. 〇6Processing. ^ In this embodiment, the multi-layered article 29〇6 is etched by wet etching. More specifically, the wet etchant used in wet etching (wet etch'tj includes H3p〇4, HN〇3 CH3COOH &amp; H2 ... The composition of the etchant in this Example 4 includes: about 70-80% of H3P04, 10-15% of 3 7 12/0 CH3C00H and 2- 8% of 112%. Although the wet etchant mentioned in this example uses 1 ^ 04, hno3, CH3C00H, 1120, etc.

501159 V. Description of the invention (51) ′ Although it is not intended to limit the present invention, the present invention can also use a wet etchant that is damaged by eight daggers to carry out money carving operations.才 木 = Refer to Figure 29G, the surname proposed in this embodiment has two parts: first, use the order

Wet etchants such as Zirconium and Zan 0 are used to oxidize Xi Xisheng ft 4 3 CH3C00HH in the multi-layered object 2906, and after 2, the oxidized part above the multi-layered object 2906 is subjected to etching treatment. . The HN03 in the Worm I insecticide is mainly used to oxidize the multilayer 290 &gt; 6, and the ⑶〆⑽η in the wet etchant is mainly used on the multilayer 2906. The oxidized part is subjected to #lithography. Soil: Emulsion-induced contaminants are formed on the multilayers shown in Fig. 29D, and the multilayers 29〇6 contain HJO4, HN〇3, and CH3C00H. Oxidation of the etchant and the like can be used to treat the vertical layer 2 9 0 6 series, and it is not necessary to perform the chemical, physical, and chemical treatments as in the conventional technology. Therefore, the multi-layered object 2906 can complete the oxidation and etching procedures under good monitoring, and an "open circuit" or open circuit phenomenon will be formed in the structure of the multilayer electrode. In addition to the advantages mentioned above, In other embodiments, an ideal slant profile (soloped &quot; proflie) for forming a complete multilayer electrode can be formed by etching, and the formation method is performed for two metal layers (ie, molybdenum / tungsten layer). And inscription / sharp layer) are obtained from the remaining engraving rate and the individual engraving depth for the two metal layers. Please refer to Fig. 29H, which is a cross-sectional view of a complete multilayer electrode 2912. During the cleaning process and wet In addition to the effect of etching, the complete multilayer electrode 2912 can have a rather ideal tape angle.

501159 V. Description of the invention (52) &quot; ---------- The contoured surface surface after wet contact has considerable flatness, and it will not form in the structure of the multilayer electrode. Please refer to FIG. 30 for the phenomenon of disconnection. FIG. 30 is a flowchart showing the formation of a level electrode according to the implementation. “T &lt; Step 3002 represents the deposition of a metal alloy layer. After completing the metal alloy After the layer deposition operation, a protective layer is deposited on the metal alloy layer in step 3004 to form a multi-layered object. Step 3006 indicates that the multi-layered object is contaminated by a cleaning process. Step 3008 indicates that the multilayer is etched to form a multilayer electrode. Therefore, the multilayer electrode and the molding method proposed in this embodiment do not need to be subjected to a peroxidation treatment, and the multilayer electrode In the structure, there will be no "open circuit" or open circuit phenomenon. Please refer to Figure 31A-31I, Figure 31A-311 is a cross-sectional view illustrating the use of an intermetallic compound (intermetal 1 ic compound) to form a multi-layer electrode, and a cross-sectional view is used to illustrate the use of the reduction of an intermetallic compound to form a flat-panel display device. The level electrode system can be used as a top electrode, a bottom electrode, a gate electrode, a column electrode, a column electrode or other types of electrodes. Please refer to Figure 3 丨 A. A metal alloy layer 3102 is deposited on a substrate 3100. In this embodiment, the first metal alloy layer 3 is composed of aluminum and niobium, and the

1012-4065-PF * ALEX.Ptd p. 501159

The thickness of the second metal e gold layer 3102 is about 2500 angstroms. The metal alloy layer proposed by the Ming Dynasty can also be made of Shi Yuqi, Dong Dong 佶 s, Pu Shan * — person j uses a thickness value greater than or less than this embodiment, or is made of other metals. Yu Qing refers to FIG. 31A. In this embodiment, the forming of the first metal alloy sound 3102 is performed in a vacuum environment, and the second metal alloy layer (herein referred to as a The work clothes is said to be a protective layer) deposited on the first metal alloy layer 3102. The pressure value of the above k-workers is maintained at about 1-5 inilliTorr. Please refer to FIG. 31B. After completing the structure shown in FIG. 31A, a resistance layer 3103 is used to shape over the first metal alloy layer 3102, and the layer 31 03 is used to prevent the An intermetallic pan is formed in a metallic gold layer 3102. In this embodiment, the first metal alloy layer 3 1 0 2 is disposed in a 3 oxygen containing environment, so Then, a natural oxide layer can be formed on the first metal alloy layer 3102. More specifically, the oxygen-containing environment can be formed by entering the first metal alloy layer 3102 into a vacuum environment during the deposition process, and allowing air to contact the first metal alloy layer 3102. In an embodiment, the pressure value of the evacuation environment where the first metal alloy layer 3 1 0 2 is deposited is similar to an atmospheric pressure (an atmosphere), and the environment is filled with air. 'In this way, the oxygen in the air and the first metal alloy layer 3102 can be opened under the action of> a natural oxide layer. In this embodiment, the thickness of the natural oxide layer is about 1 Q Angstrom. Although in this embodiment, the formation of the barrier layer is performed by an air environment with a pressure value close to an atmospheric pressure, it is not intended to limit the present invention, and the present invention may also use other oxygen-containing gas 501159. V. Invention Explanation (54) The formation of the resistive layer is performed by referring to FIG. 3 1B. In another embodiment, oxygen can be introduced into the deposition environment of the first metal alloy layer 3 1 02 to The resist layer 3103 is formed, and in a specific embodiment, the rate of the oxygen injection into the deposition environment of the first metal alloy layer 3102 is about 5 sccm (standard cublc cent imeters per minute). Although in the present embodiment, air at a rate of about 5 seem is injected into the / 100% area of the first metal alloy layer 3102, it is not intended to limit the present invention, and the present invention can also use other Oxygen-containing gas and / or other different rates are injected into the deposition environment of the first metal alloy layer 3102, so as to perform the formation of the resistive layer 'Please refer to FIG. 31B again. The present invention is an embodiment in which A target material is designated in a pre ^ setter cleaning process, so as to perform a second metal deposition operation (not shown in Fig. 31B). After the completion of this step, the &amp; gold layer 3102 deposition, the resistance layer 3103 formed after the box Ι ϊ target (target) or other unwanted pollutants can be cleaned by pre-spattering The program is removed. : See Figure 3K. Subsequently, a second metal alloy layer (also referred to as “^, 4 layers”) 31 0 4 is deposited on the first metal alloy layer 3 and 2 to form a second object 3106. &amp; In an embodiment, the protective layer 31 04 is made of molybdenum m and the protective layer 3104 has a deposited thickness of about 12,000 Angstroms. 2: This is to use a preferred embodiment to disclose such as i, but it is not intended to limit the protective layer proposed by the X 'invention. Other thickness values greater than or less than the thickness value of this example A may also be used, or by other Made of metal

501159 V. Description of the invention (55) ^-Please also refer to FIG. 31C. The function of the resistance layer 3 103 is to form an intermetallic compound in the second metal alloy layer 3 1 04 to prevent, Atoms and components are generated between the barrier layer 3103 to prevent the two separated metal layers (ie, the first gold ', the P through 3202, and the second metal alloy layer 3104) to form a new layer of gold. compound of. Compared with the conventional technology, the Shikoko will not produce intermetallic compounds during the expansion molding process, and the multi-layered 2 can be carried out at the commonly used oxidation and etching rate of electricity 2 In this embodiment, the multi-layered object in this embodiment can be formed in a stable manner, and the subsequent oxidation and # engraving processes are performed. At the same time, the above-mentioned method == two = multi-layered object 3106 is applicable to a flat display device Mid "evening =

Please refer to Figs. 31D-31I, which are based on one of the steps added in the embodiment. The other step is based on the multi-layer structure 31 06 before the etching process is performed to form the electrode structure. Steps to proceed. As shown in FIG. 31D, the fouling 308 is deposited on the multi-layer 3106 in the case of being positive, and the multi-layer 31 06 will be subjected to a water mold in a specific occasion. Pollution, these pollutants will cause unnecessary peroxidation in the subsequent sintering process, reduce the controllability of the subsequent etching process and the structural integrity of the multilayer structure formed, and The etching process will seriously affect the formation of the electrode, and the "open circuit" or open circuit phenomenon may be formed in the structure of the multilayer electrode. 凊 Refer to Figure 3 1E, in this embodiment, a The cleaning procedure performs the removal of oxidation-induced pollutants on the multilayer 3106. Yu Yishi

) υιΐ59 5. Description of the invention (56), 1 ^ means that the multilayer 3106 can be placed in a chemical solvent to perform a cleaning procedure. In a specific embodiment, the chemistry used for the cleaning procedure is selected from the group consisting of NΗβΗ, HF, and TMAH. It can be seen from Fig. 31E that the '2 structure does not substantially contain oxidation-induced pollutants, so that it is not necessary to perform general peroxidation treatment in the subsequent remaining processes. Although the chemical solvents proposed in the present and the present invention are selected from the group consisting of NH40h, HF &amp; TMAH, it is not intended to limit the present invention, and the present invention may also use other chemical solvents for cleaning procedures.

• Please refer to FIG. 31F. After the multi-layered article 3106 has completed the above-mentioned cleaning procedure, it has good adhesion and uniform shape on the surface of the multi-layered article 3 106. When a photo-imaging material 3110 (for example, a photoresist) is formed on the multi-layered object 3106 by deposition, the multi-layered object 3106 and the photo-imaging material 3110 can be quite ideal. The adhesion effect, in this embodiment, can completely eliminate the problems caused by pollutants in the conventional technology.乂 Please refer to FIG. 31 (^). In the multilayered object 3106 in FIG. 31G, only a part of the photoimaging material 3 is deposited. The structure is performed by performing a mask and photoimaging material removal. Divided by procedures.

'Please refer to FIG. 31H. The multi-layered object 3106 shown in FIG. 31H is obtained by performing an etching process on the structure in FIG. 29F. The multi-layered object 3 106 is located in a part of the remaining light. The lower side of the imaging material 311〇, so that the multi-layered article 3106 can be guaranteed to be partially retained by the optical imaging material 311〇. That is, the etching operation is to image the light that is not provided with a partial residue. The multi-layered product 3101 under the material 3110 is processed.

1012-4065-PF; ALEX.ptd 501159 &gt;

In this embodiment, the multi-layered article 3 106 is etched by wet etching. More specifically, the wet etchants used in wet etching include h3po4, hno3, CH3C00H, and H20. In this embodiment, the composition of the wet insecticide includes: about 70-80% of Η3Ρ04, 10-15% of 〇03, 7-12% of C Ha C 〇 〇 Η and 2-8% of &amp;; 0. Although the neodymium fishery agent proposed in this embodiment uses HJO4, HN03, CH3COOH, 1120, etc. to perform the etching operation, it is not intended to limit the present invention, and the present invention may also use other components of the etchant To perform an etching operation.

Please refer to FIG. 31 again. The etching procedure proposed in this embodiment includes two parts: firstly, we use a wet etchant including Η3ρ〇4, 0 化, CH3⑶〇Η and 40 etc. The laminate 3 106 is oxidized,

After Ik, the oxidized portion on the multilayered product 3 10 6 was subjected to a post-etching treatment. The above Os etchant is mainly used to oxidize the multilayer laminate 3106, and the CHgCOOH in the etchant is mainly used to perform oxidation on the multilayer laminate 3 106 Etching. It can be seen from the foregoing that substantially no oxidation-induced pollutants are formed on the multilayers shown in FIG. 29D, and the multilayers 3 1 0 6 contain IPO4, HN03, The wet etchant such as CHgCOOH and H20 is subjected to oxidation treatment, and the multilayer structure 3 1 0 6 is not required to be subjected to chemical treatment as in the conventional technology. Therefore, the multilayer laminate 3 106 can form an oxidation and etching process under good monitoring, and an open circuit or open circuit phenomenon will be formed in the structure of the multilayer electrode. ^ And 11 In addition to the advantages of the multi-layered product 3 106 described above, in its dagger & example, it is an ideal for forming a complete multilayer electrode by etching.

5. Description of the invention (58) The oblique contour is formed by the etching rate for the two layers and the aluminum / niobium layer and the two degrees. Please refer to Figure 3 I, which is a sectional view of the table. In the cleaning process and wet-etched poles 31 and 12, in addition to having a fairly ideal conical profile, the surface has a fairly flat and uniform structure, and will not form an "open circuit" or break. Please refer to Figure 32, Figure 32 It indicates that one of the levels of reducing the formation of the intermetallic compound is as described above. It can be known that the step of depositing the alloy layer is completed. Before completing the deposition of the first metal alloy layer and the second metal alloy layer, it is deposited on the first metal alloy layer. A metal alloy layer. After the deposition of the resistance layer is completed, the two metal alloy layer (which can be referred to as a protective layer) is deposited: a layered material, and the metal layer is formed between the gold layers. Intermetallic compound :: 320: It means the removal by the clever dyes. 1 The individual etching of the metal layer (that is, the molybdenum / tungsten metal layer) shows that a complete multi-layer electrode 3112 is responsible for In addition, the uniformity after fishing is generated at the same time as the occurrence of the multilayer circuit phenomenon. According to an embodiment, the molding flow chart with electrodes is shown after performing a first metal product operation, after completing a In step 3203, a resist layer is formed on the resist layer in step 3204 to form the first and second metal sequences. The multilayer laminate is etched to form a layer of electrodes and The multilayer method in the molding method means that for the multi-layer, therefore,

The multi-layer electrode # molding process is not a matter of course, although the present invention has preferred the production of intermetallic compounds. : Make a copy of the book, any familiar with this disclosure as above, and the same; used: within the scope, as a change fish: those who are not limited by the scope of the patent application attached without departing from the essence of the present invention :: this The scope of protection of the invention

Claims (1)

501159 VI. Application Patent Scope 1. A method for forming a multilayer electrode for a flat display device, the method includes the following steps: a) depositing a metal alloy layer; b) depositing a protective layer on the metal alloy Over the layers to form a multilayer; c) designating the multilayer to remove contaminants through a cleaning process; and d) etching the multilayer to form the multilayer electrode for the flat display device. 2. The method for forming a multi-layer electrode for a flat display device as described in item 1 of the patent application scope, wherein step a) includes depositing a metal alloy layer. 3. The method for forming a multi-layer electrode for a flat display device as described in item 1 of the scope of patent application, wherein the step a) includes depositing the metal alloy layer to a thickness of about 2500 angstroms. 4. The method for forming a multi-layer electrode for a flat display device as described in item 1 of the scope of patent application, wherein step b) includes depositing a protective layer including one of molybdenum and cyan. 5. The method for forming a multi-layer electrode for a flat display device as described in item 1 of the patent application scope, wherein step b) includes depositing the metal alloy layer to a thickness of about 1200 angstroms. 6. The method for forming a multi-layer electrode for a flat display device as described in item 1 of the scope of patent application, wherein step c) includes designating the multi-layered object to a chemical solvent. 1012-4065-PF; ALEX.ptd page 66 501159 6. Scope of patent application 7 · The method for forming a multi-layer electrode for a planar display device as described in the application #profit range item β, wherein the chemical solvent includes ΝΗ40Η, HF, and TIMAΗ. ^ 8 The method for forming a flat electrode for a flat display device as described in item 1 of the scope of patent application, wherein step d) includes engraving the multi-layered object to form the flat surface The multilayer electrode is used in a display device. 9. The method for forming a multi-layer electrode for a flat display device as described in item 7 of the scope of patent application, wherein the step d) includes wet etching the multilayer stack with an etchant to form the flat surface The display device should be used Layer electrode, the etchant includes H3P04, HN03, CH3C00H and H20. 1 0 · A method for cleaning and etching a multi-layer object during forming a multi-layer electrode for a flat display device, the method includes the following steps: a) designating the multi-layer object through a cleaning process The procedure removes the oxidation-induced pollutants so as to reduce unnecessary excessive oxidation formed by the oxidation-induced pollutants; and # 'b) etching the multilayer and performing the cleaning process of step a) to form The flat display device uses the multilayer electrode. H ^ F Vf // J ^ ® ^ ^ ^ ® j is a method for performing etching on a multilayer electrode during a multilayer electrode, wherein the multilayer layer includes a protective layer. It belongs to the alloy layer and. 12 · If the patent application scope is _1 for the device, only the factory / | during the layer electrode cleaning to the-sense stack ^ 501159 6. Scope of Patent Application The remaining method, wherein the metal alloy layer includes metal and titanium. 1 3 · The method for cleaning and etching a multi-layer stack during the formation of a multilayer electrode for a flat display device as described in item 丨 丨 of the patent application scope, wherein the metal alloy layer has a deposited thickness About 250 0 Angstroms. 1 4 · A method for performing, cleaning, and engraving a plurality of stacked layers during the formation of a multilayer electrode for a flat display device as described in item 11 of the Shenjing patent scope, wherein the protective layer includes molybdenum , Tungsten. 1 5 · The method for cleaning and multi-layering a multilayer electrode during the formation of a multilayer electrode for a flat display device as described in item 11 of the scope of patent application, wherein the thickness of the protective layer is deposited Approximately 2 500 Angstroms. 16 · The method for cleaning and engraving multiple stacked layers during the formation of a multi-layer electrode for a flat display device as described in item 11 of the scope of patent application, wherein step a) includes specifying the Multiple layers to a chemical solvent. 17 · The method for cleaning and etching a multi-layered object during the formation of a multilayer electrode for a flat display device as described in item 16 of the scope of patent application, wherein the chemical solvent includes NH40H , HF and 18. A method for cleaning a multi-layered laminate during the formation of a planar display electrode as described in item n of the scope of application patent n ^^^, where Xifeng conceals ^ k ^ B ”A5 The step b) includes wet-etching the multi-layered shape to form the multi-layer electrode used in the s-plane display display device. 19. The method for forming a planar display device as described in item 11 of the scope of patent application. 501159 6. The scope of patent application: A method for cleaning and leaving a multi-layer laminate during a multilayer electrode for a device, wherein step b) includes etching the multi-layer laminate with a wet etchant to form The multi-layer electrode used in the flat display device, and the residual moisture agent includes H3P04, HN03, CH3C00H and H20. 20 · —A multilayer electrode for a flat display device, comprising: a metal alloy layer; a protective layer disposed on the metal alloy layer to form a multi-layered object, the multi-layered object being etched This multilayer electrode is formed. 2 1 · A multilayer electrode for a flat display device as described in item 20 of the scope of patent application, wherein the metal alloy layer includes aluminum, 22. The multi-layer electrode for a flat display device according to item 20 of the scope of the patent application, wherein the metal alloy layer is deposited to a thickness of about 2500 angstroms. 2 3 · The multi-layer electrode for a flat display device as described in item 20 of the scope of patent application, wherein the protective layer includes a flip-flop. 24. The multi-layer electrode for a flat display device as described in item 20 of the scope of patent application, wherein the thickness of the protective layer is approximately 12 Angstroms. 25 · —A method for forming a multi-layer object by reduction molding of an intermetallic compound, the method includes the following steps: a) depositing a third metal alloy layer on / substrate; less b) forming a resistance layer On the first metal alloy layer, the resistance layer is used to prevent the formation of a hafnium intermetallic compound in the first metal alloy layer; and 501159 6. Scope of patent application, C) A second metal alloy layer is deposited on the resistance layer, and the resistance layer is used to prevent the formation of the intermetallic compound in the second metal alloy layer. 26. The method described in item 25 of the patent application for forming a multi-layered product by reduction molding of an intermetallic compound, wherein step a) includes depositing a first metal alloy Wider than the substrate 'the first metal' alloy layer includes aluminum. • 27. A method for forming a multi-layered product by reduction molding of an intermetallic compound as described in item 25 of the scope of patent application, 'wherein the step a) includes depositing the thickness of the first metal alloy layer About 2500 Angstroms. 2 8 · A method for forming a multi-layered product by reduction molding of an intermetallic compound as described in item 25 of the scope of the patent application, wherein step b) includes assigning the 4th metal alloy layer to A barrier layer containing milky soil is used to form the resistance layer, so that a natural oxide layer is formed on the first metal alloy layer. 29. The method for forming a multi-layered product by reduction molding of an intermetallic compound 9 as described in item 28 of the scope of the patent application, wherein the &quot; oxygen-containing environment is explained in detail The metal alloy layer is formed into a real place during the deposition process, and air is brought into contact with the first metal alloy layer. '' 30. The method for forming a multi-layered object by reduction molding of an intermetallic compound as described in item 28 of the scope of the patent application, wherein the human environment is by introducing oxygen into the first The metal alloy layer is formed in a deposition environment. 3. Mad T31, as described in item 25 of the scope of the patent application, the method of forming a multi-layered object by reduction molding of an intermetallic object is more complicated. 5 steps:? Human stalk has a step 501159 six The patent application scope is after the step b) and before the step c), a target material used in the deposition process of the second metal alloy layer is designated in a pre-sputter key cleaning process. 3 2. The method for forming a multi-layer object by reduction molding of an intermetallic compound as described in item 25 of the scope of patent application, wherein step c) includes depositing a second metal alloy layer on the Barrier layer, the second metal alloy layer includes molybdenum and tungsten. 3 3. The method for forming a multi-layered product by reduction molding of an intermetallic compound as described in item 25 of the scope of patent application, wherein step c) includes depositing a thickness of the second metal alloy layer About 1200 Angstroms. 34. A method for forming a multi-layer electrode for a flat display device, the method is to reduce the generation of an intermetallic compound in the process of the multi-layer electrode, the method includes the following steps: a) depositing a first A metal alloy layer on a substrate; b) forming a resistance layer on the first metal alloy layer, the resistance layer is used to prevent the formation of an intermetallic compound in the first metal alloy layer; c) depositing a first A two-metal alloy layer on the barrier layer, the barrier layer being used to prevent the formation of the intermetallic compound in the second metal alloy layer; d) designating the multilayer stack to remove contaminants through a cleaning process; and e ) Etching the multilayer to form the multilayer electrode for the flat display device. 3 5. The method for forming a multi-layer electrode for a flat display device as described in item 34 of the scope of patent application, wherein step a) includes sinking 1012-4065-PF; ALEX.ptd page 71 -------- Shen Jing's patent scope -----Molybdenum-the second metal alloy layer on the substrate, the metal, tungsten. The first metal alloy layer includes 36. If the scope of the patent application: the method for the device-a multilayer electrode, the middle Λ / 20% · ;: the thickness of the first-metal alloy layer is about 25 0 0 Angstrom: ^ step a) Including Shen 37. The method described in item 34 of the scope of patent application to form a multi-layer electrode for a TFT, wherein the step b) includes Shanghai; To form the resistance layer in an oxygen environment, a natural oxide layer is formed on the first metal alloy layer. Factory Strong 3 8 · The method for forming a multi-layer electrode for planar display as described in item 37 of the scope of patent application, wherein step a) includes The metal alloy layer enters one and two during the deposition process, and makes air contact the first metal alloy layer. 3 9 · The method for forming a multi-layer electrode for flat display placement as described in item 3 γ of the patent scope, wherein 'the oxygen-containing environment is by introducing oxygen into the first metal alloy layer 0 4 0 is formed in an environment during the deposition process. The method for forming a multi-layer electrode for a flat display device as described in item 34 of the scope of patent application, further comprising a step: b) After that, before step c), the z-mesh ladder material used in the deposition process of the second metal alloy layer is designated in a pre-sputter cleaning process. 41. The method for forming a multilayer electrode for a flat display device as described in item 34 of the scope of patent application, wherein the step c) includes the 501159 VI &gt; Scope of patent application 'Step C) includes depositing a second metal alloy layer on the resist layer, and the second metal alloy layer includes molybdenum and tungsten. 42. The method for forming a multi-layer electrode for a flat display device as described in claim 34, wherein step c) includes depositing a thickness of the second metal alloy layer of about 1200 angstroms. 4 3. The method for forming a multi-layer electrode for a flat display device as described in item 34 of the scope of patent application, wherein the step d) includes depositing a photoresist layer before forming Multilayers are specified in a chemical solvent. 44. The method for forming a multi-layer electrode for a flat display device as described in item 43 of the scope of patent application, wherein the chemical solvent includes NH40H, HF and TMAH 04, 5. If the scope of patent application is The method for forming a multi-layer electrode for a flat display device according to item 34, wherein the step d) includes wet etching the multi-layered object to form the multi-layer electrode for the flat display device 0 4 6 The method for forming a multilayer electromechanical for a flat display device as described in claim 34, wherein the step d) comprises wet etching the multilayer stack with a wet etchant to form the flat surface. The multi-layer electrode for a display device, and the wet etchant includes H3P04, HN03, CH3COOH and H20. 47. A multilayer electrode for a flat display device, comprising: a metal alloy layer; a barrier layer formed on the metal alloy layer; and a protective layer-disposed on the metal alloy layer To form a multiple stack 1012-4065-PF; ALEX.ptd p. 73) υιΐ59 6. Application for patent application: The multi-layered object is etched to form the multilayer electrode. 48. The multi-layer electrode for a planar display device as described in item 47 of the scope of the patent application, wherein the metal alloy layer includes a silicon substrate. 'To 4-9, as described in item 47 of the scope of patent application for the "layer display electrode," said metal alloy layer, the thickness of the deposition is about A 5 0 The multi-layer electrode for a flat display device as described, wherein the resistance layer includes the metal alloy layer and two natural oxide layers. 5 1 · The flat electrode for a flat display device as described in item 47 of the scope of patent application. A multi-layer electrode, wherein the thickness of the resist layer is about 100 angstroms. 52. The multi-layer electrode for a flat display device described in item 47 of the scope of patent application, wherein the protective layer includes Molybdenum and tungsten 53. The multilayer electrode for a flat display device as described in item 47 of the scope of patent application, wherein the protective layer has a deposition thickness of about 2,000 angstroms 0 54. The multilayer electrode for a flat display device according to item 47, wherein the multi-layered object is etched into a predetermined oblique contour by a wet residual agent, and the composition of the wet etchant includes about 70% 80% H3P04, 10-15% HN03, 7-12% CH3C00H and 2-8% of H20. 1012-4065-PF I ALB (.ptd p. 74