發明說明（1) 發明之技彳 本發明係有關離子束源，更詳細來說，本發明係 有關種”、員示大面積的負離子束源，此大面積的幾何 形狀可為圓形，亦可為矩形。 發明背景 請閱美國專利第M66,941號和石川（Ishikawa)著 述之 NegatiVeqon s〇urces f〇r M〇difi加 如山其刊載於Rev· 〇f Scientific Instruments，67, (30), March，1966。石川藉由氬氣或氤氣放電連同鉋 蒸氣製造二次負離子。 本發明和石川所揭露者之間有兩點不同之處： (1) 本發明係利用傳統的磁控管濺射源，並藉加 入鉋V入此力之方式，改良此傳統的磁控管濺射源。 (2) 石川自靶前方表面導入鉋，本發明則自後側 導入鉋（亦即，經由靶中的小孔）。 然而，本發明並不受限於如此之鉋供應的方向， 本發明之一新穎主要特徵在於磁控管濺射源的使用， 且絶蒸氣可自靶的側邊或前面導入。 發明之詳細說明 本發明的離子源包含兩個主要部分··（丨）提供和 維持放電之磁控管濺射源。因為相關於接地和電漿電 位，靶為負偏壓，所以放電中的氬離子會撞擊靶。（2) 儲絶器提供铯蒸氣補給至磁控管濺射源，以使負離子 旎自该處濺射。鉋自儲鉋器補給，然後經由靶後側注 499495 五、發明說明（2 經濟部智慧財產局員工消費合作社印製Description of the invention (1) Invention technology: The present invention relates to an ion beam source. More specifically, the present invention relates to a species. A large-area negative ion beam source is shown. The geometry of the large-area area may be circular. Can be rectangular. BACKGROUND OF THE INVENTION Please refer to U.S. Patent No. M66,941 and Ishikawa's NegatiVeqon s〇urces fοr M odifi Jia Rushan published in Rev. 〇f Scientific Instruments, 67, (30), March, 1966. Ishikawa manufactures secondary negative ions by using argon or krypton discharge and planing steam. There are two differences between the present invention and those disclosed by Ishikawa: (1) The present invention uses traditional magnetron sputtering The source is shot, and the traditional magnetron sputtering source is improved by adding a planer V. (2) Ishikawa introduces the planer from the front surface of the target, and the present invention introduces the planer from the rear side (that is, via the target However, the present invention is not limited to the direction of such planing supply. One of the novel main features of the present invention is the use of a magnetron sputtering source, and the insulating vapor can be from the side or front of the target. Introduction. Detailed description of the invention The sub-source contains two main parts .... (丨) The magnetron sputtering source that provides and sustains the discharge. Because the target is negatively biased in relation to ground and plasma potential, argon ions in the discharge will hit the target. 2) The reservoir provides cesium vapor supply to the magnetron sputtering source, so that the negative ion plutonium is sputtered from there. Plane is recharged from the storage planer, and then injected 499495 through the back of the target. 5. Description of the invention (2 Ministry of Economic Affairs wisdom Printed by the Property Agency Staff Consumer Cooperative
入。錄蒸《散絲表面，接著㈣—相於 面’被濺射過的二次負離子會自乾表面排出。濺㈣ 作功能。 要之歲射負離子（自_)的了 獨式之簡要說明1 第1圖顯不鉋導入系統之詳細圖形。 第2圖顯示铯分布室之詳細圖形。 第3圖個別顯示賤射靶之鳥瞰、側嗽、和俯瞰圖 第4圖顯示分配室和具矩形之靶。 备元件之說明： 1. 鉋安瓶再進料璋口 ： t絶耗盡，把密封的絶安 瓶與此槔口連接。鏠為高度氧化的元素，應在無空氣 或氧接觸下插入絶安瓶。 2. 铯截流閥·此閥位於铯安瓶和儲絶器（6)間，藉 由打開閥（2)，就能把铯導入儲铯器（6)。 3·泵送埠口 ·鉋為高度氧化的元素，儲鉋器（6)的 泵送必須避免鉋氧化。 4·截流閥： 5·前泵送鉋管線之截流閥： 6·儲铯器··裝載用於錢射室之液態絶的儲存器。 7·加熱器··加熱儲铯器，使鉋為可輸送。 8 ·液態絶 9·計量閥：控制進料至鉋分配室的鉋數量。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Into. The "sand surface" of the steamed film, and then the secondary negative ions sputtered on the surface-releasing surface 'will be discharged from the dry surface. Splash function. I want to shoot negative ions (from _). Brief description of the single type 1 Figure 1 shows the detailed diagram of the introduction system. Figure 2 shows a detailed diagram of the cesium distribution chamber. Figure 3 shows bird's eye views, side coughs, and bird's-eye views of individual shot targets. Figure 4 shows a distribution room and a rectangular target. Description of spare parts: 1. Refeeding mouth of planing ampoule: t must be exhausted, connect the sealed safety flask to this mouth. Rhenium is a highly oxidized element and should be inserted into a safety bottle without air or oxygen contact. 2. Cesium shut-off valve This valve is located between the cesium ampoule and the reservoir (6). By opening the valve (2), cesium can be introduced into the cesium reservoir (6). 3. Pumping port • Planing is a highly oxidized element. Pumping of the planer (6) must avoid planing oxidation. 4 · Shut-off valve: 5 · Shut-off valve of the front pumping planer line: 6 · Cesium reservoir · · A liquid-filled reservoir for the injection room. 7. Heater. Heat the cesium reservoir to make the planer transportable. 8 · Liquid insulation 9 · Metering valve: Controls the number of planers fed to the planer distribution room. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
!. i#----tr---------- 1C請先閱讀背面之注咅？事項再填寫本頁) 5 經濟部智慧財產局員工消費合作社印製 499495 A7 _-_ B7 五、發明說明（3 ) 10 ·緩衝概層·絕緣緩衝概層：位於加熱的絶和 接地電位的绝之間的電絕緣體，亦是暫存的絕緣體。 鉋進料步驟 •插入玻璃密封之鉋安瓿至埠口（丨）。 •在閥（2)&(4)關閉和閥（5)打開下，泵送铯管線 〇 •向下泵送之後，關閉閥（5)，然後藉下壓安瓿 弄破铯安親的玻璃密封。 •打開閥（4)，以向下泵送儲鉋器（6)。 •打開閥（2)，並使絶下流至該儲|色器。 •經由加熱器（7)調整儲鉋槽之溫度。 •使用计量閥（9)，把控制數量的絶進料至铯分 配室（11)。 11·濺射裝置鉋分配室：一種把鉋均句分配於靶（14) 表面的甜甜圈形體，此分配室的詳細結構顯示於第2 圖。 12.濺射外罩：濺射裝置之接地電位屏障。 13 ·濺射體：以銅製濺射體較佳。 14.靶（14)中的小孔：鉋經由小孔往外擴散至靶。句 表面。小孔（14)的詳細圖形顯示於第3圖。 15·濺射作用之磁場：使用磁鐵製造磁場，以限 制電子運動（亦即，製造濃密的電漿）。 16·氬離子：在電t(17)中含有電子、氬離子和氯 中子。由於乾上的負偏壓，氬離子將加速朝向乾（14) ----訂---------一 (請先閱讀背面之注意事項再填寫本頁)!. i # ---- tr ---------- 1C Please read the note on the back first? Please fill in this page again for details) 5 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 499495 A7 _-_ B7 V. Description of the Invention (3) 10 · Buffer Profile · Insulation Buffer Profile: The insulation located at the heating and ground potentials. The electrical insulator between them is also a temporary insulator. Planing feeding steps • Insert the glass-sealed planing ampule into the port (丨). • Pump the cesium line with valve (2) & (4) closed and valve (5) open. • After pumping down, close valve (5) and break the glass of cesium by pressing the ampoule. seal. • Open valve (4) to pump down planer (6). • Open the valve (2) and let the downflow to the color reservoir. • Adjust the temperature of the storage trough via the heater (7). • Use a metering valve (9) to feed a controlled quantity of absolute feed to the cesium distribution chamber (11). 11. Sputtering device planing distribution room: a donut shaped body that distributes planing sentences on the surface of the target (14). The detailed structure of this distribution room is shown in Figure 2. 12. Sputtering cover: ground potential barrier of the sputtering device. 13 · Sputtered body: A copper sputtered body is preferred. 14. The small hole in the target (14): the planer diffuses out to the target through the small hole. Sentence surface. A detailed graphic of the pinhole (14) is shown in Figure 3. 15. Magnetic field by sputtering: Use magnets to create magnetic fields to limit the movement of electrons (that is, to make dense plasmas). 16. Argon ion: Electron, argon ion, and chlorine neutron are contained in the electric t (17). Due to the negative bias on the stem, argon ions will accelerate towards the stem (14) ---- Order --------- One (Please read the precautions on the back before filling this page)
6 499495 五、發明說明（4 ) 17.電漿： 18·負離子·當氬離子撞擊乾（ι4)時，電子、中性 濺射的粒子和濺射的負離子會自靶（14)排出。 19.0型環或墊圈··密封鉋室，以防止鉋外洩。 20·磁鐵：永久性磁鐵。 21·加熱器：加熱鉋分配室，使鉋可均勻地輸送 22·多孔金屬發泡體或鋼毛··填充分配室η，且 增進分配室中鉋的均勻性。 23·沸石或多孔插塞：防止液態鉋之液滴濺灑於 靶上。 實驗結果 1.於直徑6吋之晶圓上，達到均勻的濺鍍薄膜。 2·使用石墨靶時，可沉積不定形、類似鑽石之塗 層，此塗層非常硬且無法刮傷。 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（(JNS)A4規格（210 X 297公愛了 499495 經濟部智慧財產局員工消費合作社印製 A7 _B7 五、發明說明（5 ) 元件標號對照 1.. .鉋安瓿再進料埠口 2…鉋截流閥 3.. .泵送埠口 4.. .截流閥 5.. .前泵送鉋管線之截流閥 6.. .儲鉋器 7.. .加熱器 8.. .液態铯 9.. .計量閥 10…緩衝襯層 11…濺射裝置鉋分配室 12.. .濺射外罩 13.. .濺射體 14…靶中的細孔 15…濺射作用之磁場 16.. .氬離子 17…電漿 18.. .負離子 19.. . Ο型環或墊圈 20.. .磁鐵 21.. .加熱器 22.··多孔金屬泡體或鋼毛 23.. .沸石或多孔插塞 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----i----Awi0----訂---------Αν— (請先閱讀背面之注意事項再填寫本頁)6 499495 V. Description of the invention (4) 17. Plasma: 18 · Negative ions · When argon ions hit the dry (ι4), electrons, neutral sputtered particles and sputtered negative ions will be discharged from the target (14). 19.0 ring or washer · Seal the planer to prevent the planer from leaking. 20 · Magnet: Permanent magnet. 21 · Heater: Heat the planer distribution chamber so that the planer can be transported evenly. 22 · Porous metal foam or steel wool · · Fill the distribution chamber η and improve the uniformity of the planer in the distribution chamber. 23. Zeolite or porous plugs: Prevent liquid droplets from splashing on the target. Experimental results 1. On a 6-inch diameter wafer, a uniform sputtering film is achieved. 2. When using a graphite target, an amorphous, diamond-like coating can be deposited. This coating is very hard and cannot be scratched. Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with the Chinese National Standard ((JNS) A4 specification (210 X 297) 499495 Public Love Cooperative Society printed A7 _B7 V. Description of the invention (5) Component number comparison 1 .. planing ampule re-feeding port 2. planing shut-off valve 3. pumping port 4. shut-off valve 5. shut-off valve 6. of front pumping planing line. Planer 7. Heater 8. Liquid cesium 9. Metering valve 10 ... Buffer liner 11 ... Sputtering device planing distribution chamber 12 .... Sputter cover 13 .... Sputter body 14 ... Target The pores in the hole 15 ... the magnetic field of the sputtering 16. the argon ion 17 ... the plasma 18. the negative ion 19. the O-ring or washer 20. the magnet 21. the heater 22 .... Porous metal foam or steel wool 23 ... Zeolite or porous plug The paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) ---- i ---- Awi0 ---- Order --------- Αν— (Please read the notes on the back before filling this page)