JP5122757B2 - Coating device, coating method - Google Patents

Description

  The present invention relates to a technical field of a coating apparatus, and more particularly to a coating apparatus capable of forming a thin film having high adhesion on a mold surface.

  In order to provide durability and releasability, conventional metal molds have been coated with precious metal metals (platinum, ruthenium, rhenium) and carbon materials (diamond and DLC). It was. Sputtering, ion beam sputtering, and ion plating methods can be cited as methods for attaching a noble metal material, but each film forming method has advantages and disadvantages.

  As for the sputtering method, the mere magnetron sputtering method is insufficient as the film quality of the mold exposed to high temperature, and the non-equilibrium sputtering method is used. However, the non-equilibrium sputtering method is used when the mold becomes large or produced. When the amount increases, the target is not uniformly eroded, so that the replacement frequency of the target increases and the running cost becomes expensive. In particular, the material used for the mold is a noble metal material, and as the mold becomes larger, the sputter target also becomes larger, so the use efficiency of the target is a big problem.

In the ion beam sputtering, the use efficiency of the target is higher than that of sputtering, but since the apparatus is higher than sputtering, the cost of initial (introduction) becomes high.
Since ion plating is a vapor deposition, there is a problem in adhesion, and although bias is applied to the substrate with plasma assistance, it will be less than μm in the future because it will be incorporated into the molten material boiling or gas film May not be used in areas where liquid droplets are not acceptable.
Techniques for injecting a releasable material onto the mold surface are described in the following documents.
JP-A-6-65718 JP 2000-129440 A JP 2004-315876 A

  An object of the present invention is to provide a coating apparatus that can form a thin film on a mold surface with low running cost, high adhesion, and withstand casting even at high temperatures.

In order to solve the above problems, the present invention provides a cylindrical anode electrode, a cathode electrode arranged inside the anode electrode, a trigger electrode arranged apart from the cathode electrode, and the anode electrode. A discharge power source for applying a voltage between the cathode electrodes and applying a trigger voltage to the trigger electrode to generate an arc discharge between the anode electrode and the cathode electrode to generate metal ions of the cathode electrode material; and a double few cars of the infusion that having a, an injection chamber where a negative bias voltage in synchronization with the arc discharge is pulsed to apply a film-forming target where the metal ions are implanted is disposed, a sputtering cathode having a target, wherein the film-forming target with multiple few cars of the film-forming apparatus that have a a sputtering power source for applying a sputtering voltage to the sputtering cathode Between the injection chamber and the film formation chamber, the film formation target is configured to be movable in both directions, and at least one cathode of the injection device The electrode and at least one target of the film formation apparatus are made of the same first conductive material, and at least one other cathode electrode of the injection apparatus and at least another of the film formation apparatus One of the targets is a coating apparatus composed of a second conductive material different from the first conductive material .
Also, the present invention provides a first trigger discharge by applying a first trigger voltage is generated between the first cathode electrode composed of a base material of the first trigger electrode and the conductive, the A first arc discharge is generated between the first cathode electrode and the first anode electrode, ions of the base material are released into the vacuum chamber, and the film formation target is synchronized with the first arc discharge. A negative first bias voltage is applied in a pulsed manner to irradiate ions of the base material onto the surface of the film formation target before forming the base material thin film, and the base material is applied to the inner surface of the film formation target Between the second trigger electrode and the second cathode electrode made of a conductive release material, after forming the base material injection layer and forming the base material thin film on the surface of the base material injection layer. the second trigger discharge by applying a second trigger voltage is generated in the second Generating a second arc discharge between the cathode electrode and the second anode electrode, the said ions releasable material is discharged into the vacuum chamber, the film-forming target the formation of the base material film first in synchronization with the second arc discharge pulsed manner by applying a negative second bias voltage is irradiated with ions of the releasing material in the film-forming target, the release to the inner surface of the base material film In this coating method, an injection layer of the release material is formed, and a thin film of the release material is formed on the surface of the injection layer of the release material.
Further, the present invention, the said releasable material on the surface of the thin film of the release material is irradiated, the code tape to form an injection layer of the releasable material on the interior surface of the thin film of the release material Ingu Is the method.
Further, the present invention is said to releasable material is benzalkonium computing method using platinum.
Also, the present invention is said to underlying material is a coating method using a chrome.

In the present invention, since a thin film of the same metal as the metal forming the injection layer is ion-implanted into the object to be formed, the mixed layer of the base material and the injection metal is formed at the interface. The adhesion between them is good, the thin film does not peel off, and the durability is increased.
Further, since the same metal as the metal thin film is injected into the exposed metal thin film surface and the injection layer is formed, the density of the surface of the metal thin film is increased, and the releasability and durability are improved.

Reference numeral 1 in FIG. 1 indicates a coating apparatus of the present invention.
The coating apparatus 1 includes a preparation chamber 10, an injection chamber 30, a film formation chamber 50, and a take-out chamber 70. Each chamber 10, 30, 50, 70 has a vacuum chamber 11, 31, 51, 71, respectively. Each vacuum chamber 11, 31, 51, 71 is connected to an evacuation system 18, 38, 58, 78, and is configured so that each vacuum chamber 11, 31, 51, 71 can be evacuated to a predetermined pressure. ing.

The vacuum chambers 11, 31, 51, 71 are connected by vacuum valves 91-93, and the vacuum chambers 11, 31, 51 are maintained while maintaining the vacuum atmosphere in the vacuum chambers 11, 31, 51, 71. , 71 so that the film formation target can be conveyed.
In the preparation chamber 10, transfer devices 13 and 53 for transferring the film formation target are arranged. In the take-out chamber 70, a transfer device 73 that takes out the film formation target from the take-out chamber 70 is disposed.

With reference to FIG. 2, a delivery device 15 is arranged in the vacuum chamber 11 of the preparation chamber 10.
First, the vacuum valves 91 to 93 between the charging chamber 10 and the vacuum chambers 31 and 51 of the other chambers 30 and 50 are closed, and the vacuum chamber 11 of the charging chamber 10 is set to the internal atmosphere of the other vacuum chambers 31, 51 and 71. In a state where the film formation object is separated, the film formation target is charged into the charging chamber 10 and then evacuated by the vacuum exhaust system 18 to maintain the charging chamber 10 at a predetermined pressure.
The insides of the vacuum chambers 31 and 51 of the injection chamber 30 and the film formation chamber 50 are evacuated to a predetermined pressure in advance.

Next, after placing the film formation target on the transfer device 13 and holding the film formation target on the delivery device 15, the vacuum valve 91 is opened, and the film formation target is carried into the vacuum chamber 31 of the injection chamber 30. .
Reference numeral 3 in FIG. 2 indicates a film formation target on the transfer device 13. An object to be formed by the coating apparatus 1 is mainly a metal mold.

A holding device 41 is disposed inside the vacuum chamber 31 of the injection chamber 30. The holding device 41 is configured to be able to hold one or more film formation objects. Reference numerals 4 a and 4 b are unprocessed film formation targets, which are held by the holding device 41.
The injection chamber 30 is provided with one to a plurality of (here, two) injection devices 32 ₁ and 32 ₂ .

Reference numeral 32 in FIG. 5 is a schematic configuration diagram of the injection devices 32 ₁ and 32 ₂ used in the coating apparatus 1.
The injection device 32 includes an anode electrode 101, a cathode electrode 102, and a trigger electrode 103.

  The anode electrode 101 has a cylindrical shape, and one end is attached to the bottom plate 115. The other end is open. The cathode electrode 102 and the trigger electrode 103 are disposed inside the anode electrode 101. A rod-like cathode wiring 111 is disposed on the central axis 109 of the anode electrode 101, and the cathode electrode 102 is attached to the tip of the cathode wiring 111.

  The cathode wiring 111 is inserted into the insulating cylinder 112, and the trigger electrode 103 is disposed around the insulating cylinder 112. The anode electrode 101, the cathode electrode 102, and the trigger electrode 103 are not in contact with each other.

A discharge power source 33 (reference numerals 33 ₁ and 33 _{2 in} FIG. 2) is disposed outside the vacuum chamber 31, and the anode electrode 101 and the vacuum chamber 31 are connected to the ground potential and a negative voltage is applied to the cathode electrode 102. In this state, when a positive trigger voltage is applied to the trigger electrode 103 with respect to the cathode electrode 102, a trigger discharge is generated between the trigger electrode 103 and the cathode electrode 102 on the surface of the insulating cylinder 112.

The cathode electrode 102 is made of the same metal material as that of a thin film formed in a film forming chamber 50 described later, and vapor of the metal material is generated from the cathode electrode 102 by trigger discharge, and the inside of the anode electrode 101 Is discharged, the internal pressure of the anode electrode 101 increases, the discharge withstand voltage decreases, arc discharge is induced between the anode electrode 101 and the cathode electrode 102, and an arc current flows through the cathode electrode 102.
The arc current is a large current, and a large amount of vapor and electrons of the metal material constituting the cathode electrode 102 are emitted.

The cathode electrode 102 and the cathode wiring 111 are disposed on the central axis 109 of the anode electrode 101, and the arc current flows linearly on the central axis 109 to form a magnetic field in the anode 101.
Electrons emitted into the anode electrode 101 are subjected to a Lorentz force in a direction opposite to the direction in which the current flows by a magnetic field formed by an arc current, and are emitted from the discharge port 113 into the vacuum chamber 31.

  Vapor discharged from the cathode electrode 102 includes ions (charged particles) and neutral particles, but giant charged particles or neutral particles having a small charge-mass ratio (charge is smaller than the mass) travel straight and the anode Metal ions having a large charge-mass ratio that collide with the wall surface of the electrode 101 are attracted to electrons and discharged from the discharge port 113 of the anode electrode 101 into the vacuum chamber 31.

Magnets 34 ₁ , 34 ₂ and yokes 35 ₁ , 35 ₂ are arranged in the vacuum chamber 31, and are released into the vacuum chamber 31 by the magnetic field formed by the magnets 34 ₁ , 34 ₂ and the yokes 35 ₁ , 35 _2. The traveling direction of the metal ions is bent toward the direction of the film forming objects 4 a and 4 b held by the holding device 41.

A capacitor is disposed in the discharge power source 33, and the arc current is supplied by discharging the capacitor. Therefore, when the capacitor is discharged and the voltage is lowered, the arc discharge is stopped and the release of the metal ions is completed. The capacitors are recharged by the discharge power sources 33 ₁ and 33 ₂ .

  When the trigger discharge is generated again after charging the capacitor, the arc discharge is resumed and the release of metal ions is resumed. Therefore, if the trigger voltage is applied multiple times at a predetermined interval, the same number of trigger discharges and arc discharges are generated. Therefore, by setting the number of discharges, a desired amount of metal ions is injected into the film formation target. can do. Here, the arc current flows for 2 μs and stops for 2 μs.

A bias power source 43 is disposed outside the vacuum chamber 31, the holding device 41 is connected to the bias power source 43, and a negative bias voltage is arc-discharged to the film formation objects 4 a and 4 b via the holding device 41. It can be applied in a pulsed manner in synchronization with.
A heater 42 is disposed around the holding device 41, and the film formation objects 4a and 4b held by the holding device 41 are configured to be heated to a desired temperature.

  At the time of film formation, the film formation targets 4a and 4b are heated in advance by the heater 42, and the temperature is raised to 500 ° C. When a trigger voltage is applied to the trigger electrode 103, a negative bias voltage is applied to the film formation objects 4 a and 4 b in a pulsed manner in synchronization with the arc discharge by the bias power source 43, and the film formation target is generated while the arc current flows. When a negative voltage is applied to the objects 4a and 4b, the metal ions are accelerated by the bias voltage and are incident on the surfaces of the film formation objects 4a and 4b.

  The flying direction of the metal ions is bent by a magnetic field, and the metal ions are perpendicularly incident on the surfaces of the film formation objects 4a and 4b and are injected into the film formation objects 4a and 4b. The bias voltage is −10 kV to −30 kV, and the pulse frequency is 50 to 250 kHz (ON time is 2 to 10 μs when the duty ratio is 50%).

The plurality of injection devices 32 ₁ and 32 ₂ are each equipped with the cathode electrode 102 of the same or different kind of material, and metal ions can be released from any one or a plurality of injection devices 32 ₁ and 32 _2. .
Here, an injection device 32 ₁ to which a cathode electrode 102 made of a base material is attached and an injection device 32 ₂ to which a cathode electrode 102 made of a releasable material different from the base material is attached are arranged. The base material and the releasable material are conductive substances.

An operation procedure of the coating apparatus 1 will be described.
First, a plurality of trigger voltages are applied by an injection device 32 ₁ having a cathode electrode 102 made of a base material, and a bias voltage is repeatedly applied in a pulse manner in synchronization with arc discharge. ions of the material accelerated by a negative bias voltage, to inject a desired amount of base material to the surface of the film-forming target 4a, 4 _b. Here, the base material is chromium, and the release material described later is platinum.

Reference numerals 5 a and 5 b in FIG. 6B indicate the film formation target in a state where the base material injection layer 81 is formed on the inner surface of the main body 80 of the processing target by the injected base material. .
The film formation objects 5 a and 5 b on which the base material injection layer 81 is formed are transferred from the vacuum chamber 31 of the injection chamber 30 into the vacuum chamber 51 of the film formation chamber 50 by the transfer devices 13 and 53.

With reference to FIG. 3, a holding device 61 is arranged inside the vacuum chamber 51 of the film forming chamber 50, and the film forming objects 5 a and 5 b carried into the vacuum chamber 51 are held by the holding device 61. The
The holding device 61 is configured to be movable up and down, and a heater 62 is disposed above the vacuum chamber 51. When the film formation objects 5 a and 5 b are held and then raised as shown in FIG. 4, the film formation objects 5 a and 5 b are surrounded by the heater 62.

Sputtering cathodes 52 ₁ , 52 ₂ having one or more (two in this case) targets and a sputtering power source 53 ₁ for applying a sputtering voltage to them are located immediately below the film forming objects 5a, 5b in that state. film forming apparatus is arranged and a 53 _2.

The targets of the sputtering cathodes 52 ₁ and 52 ₂ are made of the same material as the cathode electrodes 102 of the injection devices 32 ₁ and 32 ₂ , respectively, and here, the sputtering cathode 52 ₁ having a target made of a base material and the releasability. sputtering cathodes 52 ₂ having a target made of material is replaceably arranged.
A gas introduction system 59 is connected to the film forming chamber 50.

After the transfer device 53 is retracted from the inside of the vacuum chamber 51 and the vacuum valve 92 between the charging chamber 10 is closed, a sputtering gas is introduced from the gas introduction system 59, and a target made of a base material is introduced by the sputtering power source 53 _1. by applying a sputtering voltage (negative voltage or AC voltage) to the sputtering cathodes 52 ₁ having a target surface of the sputtering cathode 52 ₁ is sputtered, lurch underlying material becomes a sputtered particles.

Forming target 5a, 5b is surface injection layer 81 of the substrate material is formed, is directed to a sputtering cathode 52 ₁ having a target, the sputtered particles are film-forming target 5a, to reach 5b, FIG. 6 ( As shown in b), a base material thin film 82 is formed on the surface of the base material injection layer 81. The base material thin film 82 is in close contact with the surface of the base material injection layer 81.

The film formation objects 6a and 6b in this state are returned to the injection chamber 30, and the metal ions of the release material are applied to the thin film 82 of the base material by the injection device 32 ₂ having the cathode electrode 102 made of the release material. Irradiated.

  Also at this time, a negative bias voltage is applied to the film formation objects 6a and 6b in synchronization with the arc discharge with a pulse of a frequency of 50 to 250 kHz for an ON time of 2 to 10 μsec. A negative bias voltage is applied to the film formation targets 6a and 6b while the metal ions of the conductive material are irradiated. As a result, the irradiated release material is placed inside the thin film 82 of the base material. Injected. When a desired number of trigger voltages are applied and arc discharge is generated by that number, an injection layer 83 of a releasable material is formed on the inner surface of the underlying material thin film 82 as shown in FIG. .

The film formation objects 7a and 7b in this state are moved from the injection chamber 30 to the film formation chamber 50.
In the film forming chamber 50, a sputtering cathode 52 ₂ having a target made of a releasable material is opposed to the film forming objects 7a and 7b instead of the sputtering cathode 52 ₁ having a target made of a base material. 53 ₂ by applying a sputtering voltage to the sputtering cathode 52 ₂ having a target of the releasing material by sputtering, the surface of the injection layer 83 of releasable material, to form a thin film 84 of the releasable material.

Reference numerals 8a and 8b in FIG. 6D indicate film forming objects in a state where a thin film 84 of a release material is formed.
The film formation objects 8 a and 8 b are moved from the vacuum chamber 51 of the film formation chamber 50 into the vacuum chamber 31 of the injection chamber 30. In the injection chamber 30, a negative bias voltage synchronized with the arc discharge is applied in a pulse manner to the film formation objects 8 a and 8 b, and the same release material is placed on the surface of the release material thin film 84. Injected. As a result, as shown in FIG. 6E, a surface injection layer 85 in which the release material is injected into the inner surface of the release material thin film 84 is formed.

The film forming objects 9a and 9b are transferred to the take-out chamber 70 and then taken out from the take-out chamber 70 to the external atmosphere.
At the time of extraction, the valve 93 between the extraction chamber 70 and the injection chamber 30 is closed so that the atmosphere does not enter the injection chamber 30.

The size of each target of the sputtering cathodes 52 ₁ and 52 _{2 in} the film formation chamber 50 is 2 inches, and the size of the stage on which the film formation target is arranged is 20 cm to 30 cm in diameter. _1, 52 ₂ oscillating device is provided in, and is configured to move relative to the oscillating film-forming target. At the time of film formation, the sputtering target surfaces of the sputtering cathodes 52 ₁ and 52 ₂ are swung in a horizontal plane in a horizontal state, and the first or release material is formed on a plurality of film formation objects. The thin films 82 and 84 can be formed uniformly.

  The present invention uses a thin film of a base material and a thin film of a releasable material, but an injection layer of a releasable material is formed on the inner surface of a film forming object such as a mold, and the releasable material is formed on the surface. The thin film may be formed. Also in this case, an injection layer of the releasable material can be formed on the surface of the releasable material thin film. For example, platinum may be injected onto the surface of a film formation target such as a mold, and a platinum thin film may be formed on the surface of the platinum injection layer. In this case, platinum may be injected into the surface of the platinum layer to form a platinum injection layer.

  Moreover, in the said Example, although chromium and platinum were each selected as a base material and a mold release material, this invention is not limited to it. For example, gold, ruthenium, rhenium, or carbon can be used as the releasable material in addition to platinum. Further, carbon or palladium can be used as the base material.

The drawings for explaining the mold coating apparatus of the present invention Drawing for explaining the preparation chamber and the injection chamber Drawing for explaining a film formation chamber (1) Drawing (2) for explaining film formation chamber Drawing for explaining an injection device (a)-(e): Drawing for demonstrating the state of the film-forming target object

Explanation of symbols

1 ...... coating apparatus 4a~9a, 4b~9b ...... film formation object 30 ...... implantation chamber 32 _1, 32 ₂ ...... injection device 33 _1, 33 ₂ ...... discharge power supply 43 ...... bias power supply 50... Deposition chamber 52 ₁ , 52 ₂ ... Sputtering cathode 53, 53 ₁ , 53 ₂ ... Sputtering power source 101... Anode electrode 102.

Claims (5)

A cylindrical anode electrode, a cathode electrode arranged inside the anode electrode, a trigger electrode arranged apart from the cathode electrode, and applying a voltage between the anode electrode and the cathode electrode said trigger electrode to apply a trigger voltage to generate an arc discharge between the cathode electrode and the anode electrode, and the double number single injection device that having a discharge power source for generating metal ions of the cathode electrode material A negative bias voltage is applied in a pulsed manner in synchronization with the arc discharge, and an implantation chamber in which a film formation target into which the metal ions are implanted is disposed,
Includes a sputtering cathode having a target, and a deposition chamber and sputtering power source for applying a sputtering voltage to the sputtering cathodes and multiple few cars of the film-forming apparatus that have a said film-forming target is placed,
Between the injection chamber and the film formation chamber, the film formation target is configured to be movable in both directions,
At least one cathode electrode of the injection apparatus and at least one target of the film formation apparatus are made of the same first conductive material, and at least one other cathode electrode of the injection apparatus A coating apparatus in which at least one other target of the film forming apparatus is made of a second conductive material different from the first conductive material . A first trigger voltage is applied between the first trigger electrode and a first cathode electrode made of a conductive base material to generate a first trigger discharge, and the first cathode electrode and the first cathode electrode A first arc discharge is generated between one anode electrode, ions of the base material are released into a vacuum chamber, and a negative first bias is applied to the film formation target in synchronization with the first arc discharge. A voltage is applied in a pulsed manner, and ions of the base material are irradiated to the surface of the film formation target before forming the base material thin film, and an injection layer of the base material is formed on the inner surface of the film formation target,
After forming the base material thin film on the surface of the base material injection layer,
A second trigger voltage is applied between the second trigger electrode and a second cathode electrode made of a conductive release material to generate a second trigger discharge, and the second cathode electrode A second arc discharge is generated between the first anode electrode and the second anode electrode, ions of the release material are released into a vacuum chamber, and the second object is formed on the film formation target on which the base material thin film is formed . a negative second bias voltage pulse to be applied in synchronism with the arc discharge, is irradiated with ions of the releasing material in the film-forming target, the releasable material on the inner surface of the base material film Forming an injection layer of
A coating method for forming a thin film of the release material on the surface of the injection layer of the release material. The releasable material by irradiating the surface of the thin film of the releasing material, co pos- sesses method of claim 2 wherein forming the injection layer of the releasable material on the interior surface of the thin film of the release material . Any one coating method according to claim 2 or claim 3 using platinum on the releasing material. The coating method according to claim 2, wherein chromium is used as the base material.

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