五 、發明說明（ 發明 A7 B7 本發明與一種偵測電漿製程系統發生故障之方法有關，择士 和別是一種藉由所量測之電流、電壓與阻抗值來即時 憤測電漿製程系統發生故障之方法。 經濟部智慧財產局員工消費合作社印製 近年來’半導體晶圓廠已進展到8，，晶圓的量產規模， 同可也著手規劃12’’晶圓的建廠與生產，準備迎接另一世 代的產業規模。於是各廠不斷地擴增其產能與擴充其廠區 規模，似乎稍一停頓即會從此競爭中敗下陣來。所以，推 促著製程技術不斷地往前邁進，亦即整個半導體產業正陷 入穴端技術更迭的追逐戰，在競爭中，除了更新製程設備 外最重要的是維持廠區正常運作的廠務工作之配合，而 4兩方面的支出乃佔資本財的最大宗。 包漿在半導體之應用上，幾乎遍及每一個角落。譬如 ，在薄膜沈積方面，電漿已被應用在濺鍍（) 及PEC VD上，在姓刻方面，則已成為乾钱刻技術之主力， 在離子植入技術方面，離子植入機的離子源，便是以電漿 原理所產生之，還有現在愈來愈頻繁之te〇s/〇3Cvd製裎中 所使用之臭氧〇3,便是以電襞方式，將氧氣轉換而來的，是 以，經由上述之描述可得知電漿於半導體製程中所佔之重 ‘紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公餐 --— — — — — — — I --— 1 — — — — ^·ΙΙ--I I I (請先閱讀背面之注意事項再填寫本頁) 497195 A7 B7 五、發明說明（ 要性 « — — — IIIII1 I · I ί (請先閱讀背面之注意事項再填寫本頁) 請參照第一圖，該圖所顯示為一電漿製程機台之概要 裝置描繪圖，其中該機台包括一製程反應室（chambe〇2，且 在該蝕刻反應室2中，具有上層電極板⑶卯以eiectr〇de)4 與下層電極板（lower electrode)6。另外，一氣體輸入管線 (Gas inlet hne)8連接於該蝕刻反應室2之上方，用以流入 反應氣體。至於該輸入管線8之另一端連接於氣體流量控 制器1 0，用以控制氣體流量。並再經由氣體控制裝置（圖中 不展示出）來決疋反應氣體之種類。此外，該姓刻反應室2 並外接於一抽氣機（pump)l8，用以將反應氣體自蝕刻反應 室2中抽除。其中連接於該抽氣機1 8之管線上有一節流閥 (throttle valve)20，用以控制抽除氣體之流量。在反應室2 的下層電極板6上具有一個靜電吸盤（圖中未展示出），在 電聚姓刻製程中’用來放置矽晶圓。同時該下層電極板6 外接一步進馬達22，該步進馬達可以移動下層電極板6， 經濟部智慧財產局員工消費合作社印製 用以調整與上層電極板4間之間隙。在此電漿蝕刻設備之 中，一偏壓源14(bias power )與電漿功率源16 (Plasma Power)分別連接一匹配網路12，其中該匹配網路 一般是由一個或多個電感與電容器所組成’藉由調整這些 一個或多個的電感與電容器所造成之不同阻抗，來使得反 應室阻抗與電漿功率源阻抗匹配，以保護電漿功率源1 6與 偏壓源14。在進行電漿製程時’將製程反應氣體輸入反應 室2之中，然後利用電漿功率源1 6與偏壓源1 4控制反應 私紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 497195 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 氣體所形成電漿的運動方式，在矽晶圓的表面上方進行電 漿製程。 一般而言’在製程中所遭遇之最大問題為反應室2發 生不確定製程錯誤，如各種製程參數之不穩定，而導致產 品良率的降低，並造成晶圓的損壞。其中該製程參數錯誤 可能來自於空氣漏洩入反應室内、進入反應室之反應氣體 流量錯誤、上下電極板間隙調整錯誤或反應室壓力錯誤等 。特別是在製程進行時，這種難以預料之機台故障所造成 之晶圓製程失敗，往往祇有在定期檢測或是機台進行離線 (off-line)自我測試時，才能察覺故障的發生。是以經常造 成數以千計的晶圓受到損壞，對VL SI製程中產品之品質亦 造成極大的影a向。然而由於影響該電漿反應室2之製程參數 眾多，是以電漿製程機台中任何組件或管線而言，皆有可 能造成製程參數突然改變。 在目前所使用之電漿機台上，雖然可透過定期更換其 組件’以及逐項進行檢測以防止故障的發生，但是對於突 發性之機台故障，並不能做到事先預防之步驟，往往需等 到製程結束後，發現製程良率降低，才開始檢查，常常會 有緩不濟急之現象產生，例如在進行電漿製程中，因氣體 流量控制器1 0的故障，可能會造成氣體流量錯誤甚至影響 反應室應有之壓力’或是步進馬達22在移動下層電極板6 來改變電極板間隙時，因故障造成移動距離錯誤等，但這 本紙張尺度適用中國國家標準（CNS)A4規格（210了 II ϋ »^i n MmMW f* l < i fa— d I— I I ϋ ^ I n n I 1_ In —.1 n (請先閱讀背面之注意事項再填寫本頁) 497195 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 些因機械故障所造成之突發狀況，若無法立即通知使用者 停機檢驗，終止製程，將會造成無謂之晶圓浪費。 發明目的及概述：_ 本發明之目的即是在提供一種即時（real time)偵測電 漿製程系統故障之方法。 本發明之另一目的在提供一種可在製程進行中，動態 條件下（dynamic condition)即時偵測電漿製程反應室不足 常狀況之方法。 本發明之再一目的在提供一種可即時偵測電漿製複 反應室與其周圍組件及管線不正常狀況之方法。 本發明之又一目的是在提供使用者一種量化數據（電 流、電壓與阻抗值）’讓使用者據以得知反應室之故障所 在0 本發明之方法相較於先前技術，具有諸多之優點，首 先，本發明之方法可大幅縮短偵測電漿製程反應室之時間 。其次，透過本發明之方法，可以在進行電漿製程程序之 狀態中，偵測製程反應室的狀況。此外，本發明可將偵測 的範圍自原本的製程反應室擴充至包括其周圍組件及管線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — IIIIIIIII ·1111111 *111111 — (請先閱讀背面之注意事項再填寫本頁) 497195 A7 B7___ 五、發明說明（） ，諸如氣體流量控制器、步進馬達、真空閥門等等。 對依電漿反應室而言，許多製程參數均會影響電漿反 應室之輸出阻抗，如兩電極板間之距離，反應氣體流量或 是電極板材質等，本發明主要即是利用一外接之電壓電流 檢測器，來即時對該電漿反應室進行監測以獲知阻抗之變 化。另外亦將該電流電壓檢測器與一系統控制器連接，該 系統控制器可自動調整電漿反應室之製程參數。本發明首 先使用機械手臂，將一晶圓傳送至該電漿製程機台中，接 著根據標準製程分別設定所需之氣體流量與反應室壓力， 並將兩極板間之間隙調至預定值，其中該間隙為該蝕刻反 應室中上層電極板與該晶圓表面間之距離。然後，利用本 發明之電壓、電流量測器量取該電漿製程反應室目前電壓 、電流和阻抗值，以建立一標準值表。 接著，即可進行生產製程，利用所建立之電流、電壓 與阻抗標準比較值來監控製程過程中之電流、電壓與阻抗 ，若超出標準值一可容忍範圍，及停止該製程並進行機台 檢測。 圖式簡單說明： 由以下本發明中較佳具體實施例之細節描述，可以 對本發明之目的、觀點及優點有更佳的了解。同時參考下 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） m n tmi f n ϋ —l n I · n n (請先閱讀背面之注意事項再填寫本頁) 'Mo. 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 497195 A7 B7_ 五、發明說明（） 列本發明之圖式加以說明： 第一圖為傳統電漿製程機台之概要裝置描繪圖。 第二圖為根據本發明之電漿製程機台之概要裝置描 緣圖。 第三圖為本發明所提供建立標準值方法之流程圖。 第四圖為根據本發明之方法即時製程條件與標準值 進行比較之流程圖。 圖號對照說明 2 製程反應室 4上層電極板 6下層電極板 8輸入管線 1 0氣體流量控制器 1 2 匹配網路 14偏壓源 1 6電漿功率源 18抽氣機 20節流閥 22 步進馬達 200反應室主體 202上層電極板 204下層電極板 206電漿電源產生器 2 0 8 ， 2 2 2 S 己、_ 2 1 0步進馬達 2 1 2輸入管線 2 1 4氣體流量控制器 2 1 6抽氣機 2 1 8節流閥 220偏壓源 224電流-電壓檢測器 228電漿 226系統控制器 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） n m n n n n n n I · n n an n I i n )eJI i in n ϋ I n n (請先閱讀背面之注意事項再填寫本頁) 497195 A7 ______B7_ __ …一 五、發明說明（） 發明詳細說明： 在不限制本發明之精神及應用範圍之下’以下即以一 實施例，介紹本發明之實施；熟悉此頜域技藝者’在瞭解 本發明之精神後，當可應用此方法於各種不同之製程系統 中，藉由本發明之方法，可減少傳統上不能做到即時監測 製程系統，以致於在製程過程中，因不能對製程反應室或 周邊系統之故障作及時反應，往往只有在製程結束後，因 發現晶片之製程良率降低或晶片毀損，才察覺到製程機台 之故障，造成大量晶片之浪費。應用本發明之方法可在不 影響製程進度下，做到即時偵測製程機台之功能，增加製 程穩定性與晶片良率，降低製程失敗之發生可能性，本發 明之應用當不僅限於以下所述之實施例。 本發明提供一個新的方法，以便在製程進行中可即時 偵測電漿製程糸統之故障現象’並在故障發生時能立刻進 行檢測與修復，避免造成晶圓之損壞，有關本發明之詳細 說明如下所述。 經濟部智慧財產局員工消費合作社印製 -裝--- <請先閱讀背面之注意事項再填寫本頁) Φ. 對一個電漿反應室而言，有許多之製程參數均會影響 反應至之整體輸出阻抗’如反應室内上下電極板就如同電 谷之極板’因此距離會影響輸出阻抗，其他如電極板之材 質、反應氣體流量、反應室壓力等均會影響反應室之輸出 497195 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 阻抗。另外，以本發明之最佳實施例而言，由於是使用無 線電波波頻當作電漿源，因此於上下電極板上，會加入冷 卻水藉以冷卻電極板，但由於蒸發之緣故，冷卻水會愈來 愈少，這亦為影響製程參數之原因之一。傳統上除了採用 定時更換檢查之方法’並無有效之方法讓使用者即時得知 冷卻水之變化。然而，依據本發明之方法利用一外接電壓 電流檢測器來監視反應室阻抗之變化，能即時得知各製程 參數之改變，讓製程工程師能作即時之應變，來減少製程 晶圓之損失。 請參照第二圖，為本發明所提供方法之電漿製程機台 之概要裝置描繪圖，整個電漿製程設備為一個反應室主體 200，在反應室主體200的上方具有一個上層電極板202 (upper electrode)連接至一電漿電源產生器 206 (Plasma Power)，同時於上層電極板與電聚電源產生器 206之間，加裝一個匹配網路208 ( Matching network )， 其主要是由電容器與電阻器組成，目的在於讓使用者可藉 由調整匹配網路之阻抗，來使得總阻抗（反應室阻抗與匹 配網路阻抗）與電漿電源產生器互相匹配，以保護電漿電 源產生器206。在反應室主體200的下方具有一個下層電 極板 204 (lower electrode)，連接至一步進馬達 210 (Stepping Motor )，用來上下調整下層電極板204之位置 ，以縮減或增加上下層電極板間間隙，下層電極板204上 具有一靜電吸盤（圖中未展示出），在電漿製程中’用來 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^1 ϋ n n ϋ n IV ϋ I 0 n n «1« n i n n 訂-------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 497195 A7 一一-—____ —__B7 ____ 五、發明說明（） 放置半導體製裎晶圓。一偏壓源220 ( bias po.wer )連接於 下電極板下方，同時於下層電極板204與偏壓源220之間 ，加裝另一個匹配網路222，以保護偏壓源220。 另外’一氣體輸入管線212連接於該電漿反應室主體 2 00之上方，用以流入參與反應氣體。至於該輸入管線212 之另一端連接於氣體流量控制器2 1 4，用以控制輸入氣體 流量。此外，該反應室主體200並外接於一抽氣機216(pump) ’用以將反應氣體自反應室主體200中抽除。其中連接於 邊抽氣機216之管線上有一節流閥218(throttle valve)，用 以調節抽除氣體之流量，及控制反應室主體200内之製程 壓力大小。當進行電漿製程時，將製程反應氣體輸入反應 室2 00之中，然後利用電漿功率源1 6與偏壓源1 4控制反 應氣體所形成之電漿228的運動方式，以在矽晶圓的表面 上進行電漿製程。另外’本發明於該電漿製程系統中加入 一電流-電壓檢測器2 2 4，連接系統控制器2 2 6，其中該電 流-電壓檢測器2 2 4會檢測反應室主體2 〇 〇中下層電極板之 電流與電壓，然後將此檢測結果送至系統控制器2 2 6中， 藉以反應出整個反應室阻抗大小，再將此阻抗值與所建立 之標準值相互比對，即可得知該電漿反應室是否處於正常 狀態。值得注意的是，於另一實施例中，本發明之電流電 壓檢測器亦可連接於上層電極板，藉以量測上層電極板之 電流電壓，以反應出整個反應室之阻抗值。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — — — — — I — — — I - — — I — — — — ^ , I------ (請先閱讀背面之注意事項再填寫本頁) A7 B7 五、發明說明（ °月參照第二圖’為本發明較佳具體實施例之標準值建 ::法流裡圖，首先於進行大量生產之前，根據本發明之 :組實1例’ 先建立整個電漿製程系統於整個製程過程 #各:4點反應至之標準阻抗值，作為後續進行生產製程 ‘準值。首先於步驟i 〇〇，利用機器手臂（圖中未展 -制）將曰曰圓傳送至電漿反應室内。接著進行步驟1 02設 条件，Λ製程條件之設定係依據生產製程時之製程 ^加以設定，例如設定製程氣體流量，或利用步進馬達 ;整：層私極板204升降以設定上下電極板間之間隙(GaP) 、’、中，所5又疋之該氣體流量與電極板間之間隙大小均 為根據於實際生產製程時所使用之製程條件，㈣，於步 ^ 4讓《包聚製程機台$成該彳導體晶圓之後續製程 亦f ^仃本發明標準值之建立。值得注意的是，此標 ’值係建立在所有組件與電装反應室均處於正常狀態之下 ;^，1 06日χτ，紀錄每一時點之電流·電壓值與阻抗值， :中°亥每％點，是指由使用者自訂之記錄時P日1，該記錄 ，’可為每五/刀鐘，己錄一次，或每十分鐘記錄一次等，亦 可於製程條件變換時做紀錄，此時所記錄之電&、電壓與 阻抗值即為本發明之標準值，步驟1〇8。 當此標準值建立後，即可進行生產製程，接著請參照 :四圖，㈣為根據本發明較佳具體實施例之監測反應室 *程圖首先，如步驟3 〇〇所示，使用機器手臂（圖中未展 示出）將欲進行電聚製程之晶圓傳送至電裳反應室内，以便 11 本紙張尺Μ財闕家標準（CNS)A4規格（210 X 297 裝—— (請先閱讀背面之注意事項再填寫本頁) 訂： 經濟部智慧財產局員工消費合作社印製 497195 A7 _ B7_ 五、發明說明（） « ^—— (請先閱讀背面之注意事項再填寫本頁) 進行後續製程。接著進行步驟3 1 0，設定製程條件，例如設 定製程反應氣體流量、調整上下層電極板間之間隙等。接 著於步驟3 20，即可開始進行電漿製程，於步驟3 3 0時，可 根據標準值建立之時點隨時讀取電流-電壓檢測器224上所 顯示之值，亦即可為每五分鐘讀取一次，或每十分鐘讀取 一次或於製程條件變換時讀取，如此即可得知該時點時之 電漿反應室阻抗量測值。接著於步驟3 40時，將所讀取之電 漿反應室阻抗量測值與標準值相互比對，並於步驟3 5 0進行 判斷，如量測值與標準值之差異大於一可容忍範圍，即可 判斷出該電漿製程系統某一部份發生故障，而於步驟3 60 停機檢測，如此，即可即時得知機台有故障發生，因而可 避免傳統上因不能即時檢測而造成大量^片損壞之可能性 發生，其中上述之可容忍範圍值，可由使用者自訂。 經濟部智慧財產局員工消費合作社印製 另一方面，若量測之值與標準值之差異是位於一可容 忍範圍内，則進行步驟3 70，分別與電漿電源產生器206、 偏壓源220、步進馬達210和氣體流量控制器214相連接之系 統控制器226，可根據電壓電流檢測器所測得之反應室阻抗 量測值，以自動驅動步進馬達調整上下電極板間間隙、或 調整氣體流量控制器214，改變進氣量等，亦可自動調整電 漿電源產生器206與偏壓源220之輸出功率，以自動調整整 個電漿反應室之輸出阻抗，使其相等於所建立之標準值。 接著於步驟3 8 0，若此時之製程步驟為最後一步驟時，於步 驟3 90則整個電漿製程完成，否則再重複上述之步驟3 3 0， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 497195 A7 _________B7_____ 五、發明說明（） 進行量測與比對，直至整個電漿製程完成。 另一方面，在另一實施例中，標準值之建立，可選定 一製程條件來加以建立，例如，可固定上下電極板間之間 隙’然後改變其他製裎條件，來建立與該固定上下電極板 間隙有關之電流-電壓與阻抗標準值，而其他製程條件，如 輸入電漿反應室之氣體流量大小與反應室壓力等一系列之 電流-電壓與阻抗標準值，亦可根據上述之方法來加以建立 ’如此’即可建立與各個製程條件有關之標準值，一旦在 某製程條件下所讀出之反應室阻抗值，超出在該製程條件 下禚準值一可容忍範圍，即可確切得知該電漿製程機台產 生該製程條件之元件受到損害，即可即時將該元件加以更 換’以避免造成大量製程晶片之損害。 本發明相較於先前技術，具有諸多之優點，首先，本 發明之方法可大幅縮短偵製程機台故障之時間，有效節省 牯間成本。且不同於先前技術中，由於缺乏即時檢測知功 能，往往要等到發現大量之晶片損壞，才得知製程機台出 錯，且不能馬上確切得知出錯之單元，但應用本發明，利 用一建立之反應室阻抗標準值，能讓使用者即時得知出錯 之電漿機台單元，有效節省成本及製程聘間之浪費。 本發明雖以一較佳實例闌明如上，然其並非用以限定 本發明精神與發明實體，僅止於此一實施例爾。對熟悉此 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） :裝—— ί靖先閱讀背面之注意亊項再填寫本頁) 訂： 癱· 經濟部智慧財產局員工消費合作社印製 497195 A7 _B7 _ 五、發明說明（） 領域技藝者，在不脫離本發明之精神與範圍内所作之修改 ，均應包含在下述之申請專利範圍内。 I · I I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）V. Description of the invention (Invention A7 B7 The present invention relates to a method for detecting a failure in a plasma processing system. Zeshi and others are a method for measuring the plasma processing system in real time by measuring the current, voltage, and impedance values. The method of failure. The Intellectual Property Bureau of the Ministry of Economic Affairs' employee consumer cooperative has printed in recent years that the semiconductor wafer fab has progressed to 8, and the mass production scale of wafers has also begun to plan the construction and production of 12 '' wafers. , Ready to welcome another generation of industrial scale. Therefore, each plant continues to expand its production capacity and expand its plant area, it seems that a short pause will defeat the competition. Therefore, the process technology is being pushed forward continuously Moving forward, that is, the entire semiconductor industry is falling into a chase war of end-to-end technology change. In the competition, in addition to updating process equipment, the most important thing is to maintain the normal operation of the factory to cooperate with the factory work, and the two aspects of expenditure are capital The biggest case of wealth. The application of encapsulation in semiconductors is almost everywhere. For example, in film deposition, plasma has been used in sputtering () and PEC. On VD, in terms of surname engraving, it has become the main force of dry money engraving technology. In ion implantation technology, the ion source of the ion implanter is generated by the principle of plasma, and it is becoming more and more frequent now. The ozone 03 used in the te〇s / 〇3Cvd system is converted from oxygen by the electric method. Therefore, according to the above description, it can be known that plasma accounts for the semiconductor process. The paper size applies to the Chinese National Standard (CNS) A4 specification (21〇X 297 meals --- — — — — — — — I --- 1 — — — — ^ · ΙΙ--III (Please read the Note for this page, please fill in this page) 497195 A7 B7 V. Description of the invention (essential «— — — IIIII1 I · I ί (Please read the notes on the back before filling this page) Please refer to the first picture, which is shown as A schematic drawing of an apparatus for a plasma process machine, wherein the machine includes a process reaction chamber (chambe〇2, and in the etching reaction chamber 2, there is an upper electrode plate ⑶ 卯 eieitrode) 4 and a lower electrode Plate (lower electrode) 6. In addition, a gas inlet line (Gas inlet hne) 8 is connected above the etching reaction chamber 2 for the reaction gas to flow in. As for the other end of the input line 8, it is connected to the gas flow controller 10 for controlling the gas flow rate, and then passes through the gas control device (not shown in the figure). (Shown) to determine the type of reaction gas. In addition, the last name of the reaction chamber 2 is externally connected to a pump 18 to remove the reaction gas from the etching reaction chamber 2. It is connected to the pump There is a throttle valve 20 on the pipeline of the gas generator 18 to control the flow of gas. The lower electrode plate 6 of the reaction chamber 2 has an electrostatic chuck (not shown in the figure). In the engraving process, it is used to place silicon wafers. At the same time, the lower electrode plate 6 is connected to a stepping motor 22, which can move the lower electrode plate 6. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to adjust the gap with the upper electrode plate 4. In the plasma etching equipment, a bias power source 14 (bias power) and a plasma power source 16 (Plasma Power) are connected to a matching network 12, respectively. The matching network is generally composed of one or more inductors and The capacitor is formed by adjusting the impedance of the one or more inductors and the different impedances of the capacitor to match the impedance of the reaction chamber with the impedance of the plasma power source to protect the plasma power source 16 and the bias source 14. During the plasma process, 'the process reaction gas is input into the reaction chamber 2, and then the plasma power source 16 and the bias source 1 4 are used to control the reaction. The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297). (Mm) 497195 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Plasma plasma is formed by the gas movement process above the surface of the silicon wafer. Generally speaking, the biggest problem encountered in the process is that the reaction chamber 2 generates uncertain process errors, such as the instability of various process parameters, which leads to a reduction in product yield and damage to the wafer. The process parameter errors may come from the leakage of air into the reaction chamber, the flow rate of the reaction gas entering the reaction chamber, the adjustment of the gap between the upper and lower electrode plates, or the pressure of the reaction chamber. Especially during the process, the failure of the wafer process caused by such unpredictable machine failures can often be detected only when the inspection is performed regularly or the machine performs an off-line self-test. As a result, thousands of wafers are often damaged, which greatly affects the quality of products in the VL SI process. However, due to the large number of process parameters affecting the plasma reaction chamber 2, any component or pipeline in the plasma process machine may cause sudden changes in process parameters. On the plasma machines currently in use, although the components can be periodically replaced and tested one by one to prevent the occurrence of failures, for sudden machine failures, the precautionary steps cannot be achieved in advance, often It is necessary to wait until the end of the process and find that the process yield has decreased before starting the inspection. There are often inconveniences. For example, in the plasma process, the gas flow controller 10 may cause a faulty gas flow. It even affects the pressure that the reaction chamber should have, or when the stepping motor 22 moves the lower electrode plate 6 to change the electrode plate gap, the moving distance is wrong due to failure, etc., but this paper standard applies to China National Standard (CNS) A4 (210 II »^ in MmMW f * l < i fa— d I— II ϋ ^ I nn I 1_ In —. 1 n (Please read the notes on the back before filling this page) 497195 A7 B7 Ministry of Economy Printed by the Intellectual Property Bureau's Consumer Cooperatives V. Invention Description (Some unexpected conditions caused by mechanical failure, if the user cannot immediately notify the user to stop the inspection and terminate the process, it will be useless Wafer waste. Purpose and summary of the invention: The purpose of the present invention is to provide a real-time method for detecting the failure of the plasma process system. Another object of the present invention is to provide a dynamic A method for real-time detection of the insufficiency of the plasma chamber reaction chamber under dynamic conditions. Another object of the present invention is to provide a method for real-time detection of abnormal conditions of the plasma-reactor reaction chamber and its surrounding components and pipelines. Another object of the present invention is to provide users with a quantified data (current, voltage, and impedance values) to allow users to know where the failure of the reaction chamber is located. The method of the present invention has many advantages compared with the prior art. Firstly, the method of the present invention can greatly shorten the time for detecting the plasma processing reaction chamber. Secondly, through the method of the present invention, the state of the processing reaction chamber can be detected in the state of the plasma processing procedure. In addition, the present invention The invention can expand the detection range from the original process reaction chamber to include its surrounding components and pipelines. The paper size is applicable to Chinese national standards. Standard (CNS) A4 (210 X 297 mm) — IIIIIIIII · 1111111 * 111111 — (Please read the precautions on the back before filling this page) 497195 A7 B7___ 5. Description of the invention (), such as gas flow controller, step Into the motor, vacuum valve, etc. For the plasma reaction chamber, many process parameters will affect the output impedance of the plasma reaction chamber, such as the distance between the two electrode plates, the flow of reaction gas or the material of the electrode plate, etc. The invention mainly uses an external voltage and current detector to monitor the plasma reaction chamber in real time to learn the impedance change. In addition, the current and voltage detector is connected to a system controller, which can automatically Adjust the process parameters of the plasma reaction chamber. The present invention first uses a mechanical arm to transfer a wafer to the plasma process machine, and then sets the required gas flow rate and reaction chamber pressure according to the standard process, and adjusts the gap between the two electrode plates to a predetermined value, where the The gap is the distance between the upper electrode plate and the wafer surface in the etching reaction chamber. Then, the current voltage, current and impedance values of the plasma process reaction chamber are measured by using the voltage and current measuring device of the present invention to establish a standard value table. Then, the production process can be carried out, and the established current, voltage, and impedance standard comparison values are used to monitor the current, voltage, and impedance during the manufacturing process. If it exceeds the standard value, a tolerable range, and stop the process and perform machine inspection . Brief description of the drawings: The following detailed description of the preferred embodiments of the present invention will provide a better understanding of the objects, viewpoints and advantages of the present invention. At the same time, refer to the following paper standards for China National Standards (CNS) A4 specifications (210 X 297 mm) mn tmi fn ϋ —ln I · nn (Please read the notes on the back before filling this page) 'Mo. Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by 497195 A7 B7_ V. Description of the Invention () Illustrate the diagram of the invention: The first picture is a schematic drawing of a conventional plasma processing machine . The second figure is a schematic drawing of a schematic device of a plasma processing machine according to the present invention. The third figure is a flowchart of a method for establishing a standard value provided by the present invention. The fourth figure is a flowchart for comparing the real-time process conditions with standard values according to the method of the present invention. Drawing number comparison description 2 Process reaction chamber 4 Upper electrode plate 6 Lower electrode plate 8 Input line 1 0 Gas flow controller 1 2 Matching network 14 Bias source 1 6 Plasma power source 18 Air extractor 20 Throttle valve 22 steps Inlet motor 200 reaction chamber body 202 upper electrode plate 204 lower electrode plate 206 plasma power generator 2 0 8, 2 2 2 S, _ 2 1 0 stepper motor 2 1 2 input line 2 1 4 gas flow controller 2 1 6 Extractor 2 1 8 Throttle valve 220 Bias source 224 Current-voltage detector 228 Plasma 226 System controller This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) nmnnnnnn I · nn an n I in) eJI i in n ϋ I nn (Please read the precautions on the back before filling in this page) 497195 A7 ______B7_ __… 15. Description of the invention () Detailed description of the invention: Without limiting the spirit of the invention and Under the scope of application, 'the following is an embodiment to introduce the implementation of the present invention; after knowing the spirit of the present invention', the method can be applied to a variety of different process systems. Method Traditionally, it is not possible to monitor the process system in real time, so that during the process, due to the failure to respond to the failure of the process reaction chamber or peripheral systems, it is often only after the end of the process that the yield of the process is reduced or the wafer is found Damage, only to detect the failure of the process machine, resulting in the waste of a large number of wafers. The application of the method of the present invention can realize the function of the process machine in real time without affecting the progress of the process, increase process stability and wafer yield, and reduce the possibility of process failure. The application of the present invention is not limited to the following实施 例。 The embodiment described. The invention provides a new method, so that the failure phenomenon of the plasma process system can be detected in real time during the process and can be immediately detected and repaired when a failure occurs to avoid damage to the wafer. Details about the present invention The description is as follows. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-Packing --- <Please read the notes on the back before filling out this page) Φ. For a plasma reaction chamber, there are many process parameters that will affect the reaction to The overall output impedance 'such as the upper and lower electrode plates in the reaction chamber is like the plates of an electric valley'. Therefore, the distance will affect the output impedance. Others such as the material of the electrode plate, the flow rate of the reaction gas, and the pressure in the reaction chamber will affect the output of the reaction chamber. Printed by A7 B7, Consumer Cooperatives of the Ministry of Intellectual Property Bureau. 5. Description of Invention () Impedance. In addition, in the preferred embodiment of the present invention, since the radio wave frequency is used as the plasma source, cooling water is added to the upper and lower electrode plates to cool the electrode plate, but due to evaporation, the cooling water Will be less and less, which is one of the reasons that affect the process parameters. Traditionally, there has been no effective way to let users know the change of cooling water in real time except for the method of regular replacement inspection. However, according to the method of the present invention, an external voltage and current detector is used to monitor the change in the impedance of the reaction chamber, so that changes in various process parameters can be known in real time, so that process engineers can make immediate strain to reduce the loss of process wafers. Please refer to the second figure, which is a schematic device drawing of the plasma process machine provided by the method of the present invention. The entire plasma process equipment is a reaction chamber main body 200, and an upper electrode plate 202 is provided above the reaction chamber main body 200 ( The upper electrode is connected to a plasma power generator 206 (Plasma Power). At the same time, a matching network 208 is installed between the upper electrode plate and the electro-polymer power generator 206, which is mainly composed of a capacitor and The composition of the resistor is to allow the user to adjust the impedance of the matching network so that the total impedance (resistance of the reaction chamber and the impedance of the matching network) matches the plasma power generator to protect the plasma power generator 206 . There is a lower electrode plate 204 (lower electrode) below the reaction chamber body 200, which is connected to a stepping motor 210 for adjusting the position of the lower electrode plate 204 up and down to reduce or increase the gap between the upper and lower electrode plates. The lower electrode plate 204 has an electrostatic chuck (not shown in the figure), which is used in the plasma process to apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) to the paper size ^ 1 ϋ nn ϋ n IV ϋ I 0 nn «1« ninn Order -------- (Please read the notes on the back before filling out this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 497195 A7 One by one ---____ — __B7 ____ 5. Description of the invention () Place a semiconductor wafer. A bias source 220 (bias po.wer) is connected below the lower electrode plate, and another matching network 222 is installed between the lower electrode plate 204 and the bias source 220 to protect the bias source 220. In addition, a gas input line 212 is connected above the plasma reaction chamber main body 200, and is used to flow in the reaction gas. The other end of the input line 212 is connected to a gas flow controller 2 1 4 for controlling the input gas flow. In addition, the reaction chamber main body 200 is externally connected to an air extractor 216 (pump ') for removing the reaction gas from the reaction chamber main body 200. There is a throttle valve 218 on the pipeline connected to the side extractor 216, which is used to adjust the flow rate of the exhaust gas and control the process pressure in the reaction chamber body 200. When the plasma process is performed, the process reaction gas is input into the reaction chamber 200, and then the plasma power source 16 and the bias source 14 are used to control the movement mode of the plasma 228 formed by the reaction gas so as to A plasma process is performed on a round surface. In addition, the present invention adds a current-voltage detector 2 2 4 to the plasma process system and connects the system controller 2 2 6, wherein the current-voltage detector 2 2 4 will detect the middle and lower layers of the reaction chamber main body 200 The current and voltage of the electrode plate, and then send this test result to the system controller 2 2 6 to reflect the impedance of the entire reaction chamber, and then compare this impedance value with the established standard value to find out Whether the plasma reaction chamber is in a normal state. It is worth noting that, in another embodiment, the current and voltage detector of the present invention can also be connected to the upper electrode plate, thereby measuring the current and voltage of the upper electrode plate to reflect the impedance value of the entire reaction chamber. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) — — — — — I — — — I — — — I — — — — ^, I ------ (Please read first Note on the back page, please fill in this page again) A7 B7 V. Description of the invention (° Refer to the second figure 'The standard value of the preferred embodiment of the present invention :: method flow chart, first before mass production, according to According to the present invention, one example is implemented. 'The entire plasma process system is first established throughout the entire process ##: The standard impedance value of 4 points of reaction is used as the standard value of the subsequent production process. First, in step i 00, the machine is used. The arm (not shown-manufactured in the figure) transmits the circle to the plasma reaction chamber. Then proceed to step 102 to set the conditions. The Λ process conditions are set according to the process ^ during the production process, such as setting the process gas flow. Or use a stepping motor; entire: the layer private electrode 204 is raised and lowered to set the gap (GaP) between the upper and lower electrode plates, and the size of the gas flow and the gap between the electrode plates are based on actual Process bar used in production process ㈣, in step ^ 4, let the "packaging process machine" become the subsequent process of the 彳 conductor wafer. ^ 仃 The establishment of the standard value of the present invention. It is worth noting that this standard value is established on all components. And Denso reaction chambers are under normal conditions; ^, 1 06 χτ, record the current, voltage and impedance values at each point in time,: middle ° Hai every% point, refers to the user-defined recording time P Day 1, the record, 'can be recorded every five / knife clock, recorded once, or once every ten minutes, etc., can also be recorded when the process conditions are changed, at this time the recorded electricity & voltage and impedance values That is the standard value of the present invention, step 108. After the standard value is established, the production process can be performed, and then please refer to: Figure 4, which is the process chart of the monitoring reaction chamber according to the preferred embodiment of the present invention. First, as shown in step 3, a robotic arm (not shown) is used to transfer the wafers for the electropolymerization process to the electric skirt reaction chamber, so that 11 paper rulers (CNS) A4 Specifications (210 X 297 Pack-(Please read the precautions on the back before filling in this ) Order: Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 497195 A7 _ B7_ V. Description of the invention () ^ ^ (Please read the precautions on the back before filling this page) for subsequent processes. Then proceed to step 3 1 0 , Set the process conditions, such as setting the reaction gas flow rate of the process, adjusting the gap between the upper and lower electrode plates, etc. Then in step 3 20, the plasma process can be started, and in step 3 3 0, the time point can be established according to the standard value Read the value displayed on the current-voltage detector 224 at any time, that is, once every five minutes, or once every ten minutes or when the process conditions are changed, so that the time point can be known The impedance measurement of the plasma reaction chamber. Then in step 3 40, compare the read impedance measurement value of the plasma reaction chamber with the standard value, and make a judgment in step 3 50, if the difference between the measured value and the standard value is greater than a tolerable range , It can be judged that a part of the plasma processing system is faulty, and the shutdown detection is performed at step 3 60. In this way, you can immediately know that the machine has a fault, so you can avoid traditionally causing a large number of failures due to the inability to detect immediately. ^ The possibility of film damage occurs, and the above-mentioned tolerance range value can be customized by the user. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. On the other hand, if the difference between the measured value and the standard value is within a tolerable range, go to step 3 70, respectively with the plasma power generator 206 and the bias source. 220. The system controller 226 connected to the stepping motor 210 and the gas flow controller 214 can automatically drive the stepping motor to adjust the gap between the upper and lower electrode plates based on the impedance measurement of the reaction chamber measured by the voltage and current detector. Or adjust the gas flow controller 214, change the intake air volume, etc., and also automatically adjust the output power of the plasma power generator 206 and the bias source 220 to automatically adjust the output impedance of the entire plasma reaction chamber to be equal to all Established standard value. Then at step 3 0 0, if the process step at this time is the last step, the entire plasma process is completed at step 3 90, otherwise repeat the above step 3 3 0. This paper size applies the Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 497195 A7 _________B7_____ 5. Description of the invention () Measure and compare until the entire plasma manufacturing process is completed. On the other hand, in another embodiment, the establishment of the standard value can be established by selecting a process condition. For example, the gap between the upper and lower electrode plates can be fixed, and then other manufacturing conditions can be changed to establish the fixed upper and lower electrodes. Standard values of current-voltage and impedance related to the plate gap, and other process conditions, such as a series of current-voltage and impedance standard values such as the gas flow rate and pressure in the reaction chamber of the plasma, can also be obtained according to the above method. Establishing 'this way' can establish standard values related to each process condition. Once the impedance value of the reaction chamber read out under a certain process condition exceeds the tolerable range of the standard value under the process condition, the exact value can be obtained. Knowing that the components of the plasma processing machine that generate the processing conditions are damaged, the components can be replaced immediately 'to avoid causing damage to a large number of process wafers. Compared with the prior art, the present invention has many advantages. First, the method of the present invention can greatly shorten the time for detecting the failure of the process machine, and effectively save the cost. And unlike the prior art, due to the lack of real-time detection and knowledge function, it is often necessary to wait until a large amount of wafer damage is found before the process machine is found to be faulty, and the faulty unit cannot be accurately known immediately, but the present invention is used to build a The standard value of the impedance of the reaction chamber allows the user to know the plasma machine unit in error immediately, which effectively saves costs and wastes the manufacturing process. Although the present invention is as described above with a preferred example, it is not intended to limit the spirit and inventive substance of the present invention, but only to this embodiment. To be familiar with this paper standard, apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm): Packing-Please read the note on the back before filling in this page) Order: Paralyzed · Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the Consumer Cooperative 497195 A7 _B7 _ V. Description of Inventions (7) Modifications made by those skilled in the art without departing from the spirit and scope of the present invention should be included in the scope of patent application described below. I · I I (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)