CN111719129A - Automatic detection method for leakage of vacuum cavity - Google Patents
Automatic detection method for leakage of vacuum cavity Download PDFInfo
- Publication number
- CN111719129A CN111719129A CN202010610511.0A CN202010610511A CN111719129A CN 111719129 A CN111719129 A CN 111719129A CN 202010610511 A CN202010610511 A CN 202010610511A CN 111719129 A CN111719129 A CN 111719129A
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- CN
- China
- Prior art keywords
- sputtering
- sputtering process
- wafer
- cavity
- voltage value
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/52—Means for observation of the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Examining Or Testing Airtightness (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an automatic detection method for vacuum cavity leakage, which comprises the following steps: (1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set; (2) starting the sputtering process on the wafer, and recording the data of the sputtering process; (3) continuously detecting and judging the voltage value in the wafer sputtering process; (4) and after the sputtering process operation is finished, storing the detected sputtering data. Whether external air leakage exists at present is judged by detecting the voltage value fed back when the wafer is sputtered in the sputtering process, so that the aims of detecting the vacuum degree of the sputtering cavity, guaranteeing the production quality of the wafer and reducing the production cost of enterprises are fulfilled.
Description
Technical Field
The invention relates to the field of wafer production and application, in particular to an automatic detection method for leakage of a vacuum cavity.
Background
The sputtering process is an essential step in wafer production and processing, in the traditional process, the wafer is generally conveyed into a cavity of the sputtering equipment through a manipulator in the wafer sputtering equipment, the sputtering process is started after the vacuum in the cavity reaches a set value, but in the process, the sputtering cavity is easy to leak outside air, once the outside air leaks, oxygen molecules in the air can cause film formation pollution defects on the sputtering product, so that subsequent wafer bumps have glass defects, the product quality of the wafer is influenced, and the cost investment of enterprises is increased.
Disclosure of Invention
In order to solve the technical problems, the invention provides an automatic detection method for vacuum chamber leakage, which aims to achieve the aims of constantly detecting the vacuum degree of a sputtering chamber, guaranteeing the production quality of wafers and reducing the production cost of enterprises.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an automatic detection method for leakage of a vacuum cavity comprises the following steps:
(1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set;
(2) starting the sputtering process on the wafer, and recording the data of the sputtering process;
(3) continuously detecting and judging the voltage value in the wafer sputtering process;
(4) and after the sputtering process operation is finished, storing the detected sputtering data.
The invention judges whether external air leakage exists at present by detecting the voltage value fed back when the wafer is sputtered in the sputtering process, thereby achieving the aims of constantly detecting the vacuum degree of the sputtering cavity, ensuring the production quality of the wafer and reducing the production cost of enterprises.
2. The method as claimed in claim 1, wherein the detecting step (3) comprises the following steps:
(3-1) detecting the feedback voltage value in the wafer sputtering process and acquiring corresponding data;
(3-2) transmitting the acquired data to the intelligent terminal, and comparing the acquired data with the data stored in the intelligent terminal;
(3-3) correspondingly operating the sputtering process according to the comparison result:
if the detected voltage value is in the set region, the sputtering process is continued;
if the detected voltage value is outside the set region, controlling the sputtering process to stop, and performing investigation and maintenance;
and (3-4) repeating the step (3-1) after the examination and the overhaul are finished.
The invention has the following advantages:
1. the invention judges whether external air leakage exists at present by detecting the voltage value fed back when the wafer is sputtered in the sputtering process, thereby achieving the aims of constantly detecting the vacuum degree of the sputtering cavity, ensuring the production quality of the wafer and reducing the production cost of enterprises.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below.
The invention provides an automatic detection method for leakage of a vacuum cavity, which has the working principle that whether external air leakage exists at present is judged by detecting a voltage value fed back when a wafer is sputtered in the sputtering process, so that the aims of constantly detecting the vacuum degree of the sputtering cavity, guaranteeing the production quality of the wafer and reducing the production cost of enterprises are fulfilled.
The present invention will be described in further detail with reference to examples and specific embodiments.
An automatic detection method for leakage of a vacuum cavity comprises the following steps:
(1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set;
(2) starting the sputtering process on the wafer, and recording the data of the sputtering process;
(3) continuously detecting and judging the voltage value in the wafer sputtering process;
(3-1) detecting the feedback voltage value in the wafer sputtering process and acquiring corresponding data;
(3-2) transmitting the acquired data to the intelligent terminal, and comparing the acquired data with the data stored in the intelligent terminal;
(3-3) correspondingly operating the sputtering process according to the comparison result:
if the detected voltage value is in the set region, the sputtering process is continued;
if the detected voltage value is outside the set region, controlling the sputtering process to stop, and performing investigation and maintenance;
and (3-4) repeating the step (3-1) after the examination and the overhaul are finished.
(4) And after the sputtering process operation is finished, storing the detected sputtering data.
In the actual sputtering process, when external gas leakage occurs, the process gas (Ar) is contaminated by oxygen in the air, which causes the voltage value fed back during the wafer sputtering to be much higher than that in the normal production, in the actual production process, the voltage is generally 470 volts (with small variation in the upper and lower ranges) under the condition of no external gas leakage, and when external gas leakage occurs, the voltage value at this time exceeds the positive production voltage value by more than 30 volts, so the alarm value can be directly set to be 500 volts. That is, when the voltage value is detected to exceed 500 volts (the specific setting value can be set by a person skilled in the art according to actual production requirements), the control terminal controls the sputtering device to stop working, and at this time, only the wafer being sputtered is reported to be wasted, and batch scrapping is not caused, so that the sputtering quality of the wafer is ensured, and the production cost is reduced.
The above description is only a preferred embodiment of the method for automatically detecting leakage of a vacuum chamber disclosed in the present invention, and it should be noted that, for those skilled in the art, variations and modifications can be made without departing from the inventive concept, and these variations and modifications all fall within the scope of the present invention.
Claims (2)
1. An automatic detection method for leakage of a vacuum cavity is characterized by comprising the following steps:
(1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set;
(2) starting the sputtering process on the wafer, and recording the data of the sputtering process;
(3) continuously detecting and judging the voltage value in the wafer sputtering process;
(4) and after the sputtering process operation is finished, storing the detected sputtering data.
2. The method as claimed in claim 1, wherein the detecting step (3) comprises the following steps:
(3-1) detecting the feedback voltage value in the wafer sputtering process and acquiring corresponding data;
(3-2) transmitting the acquired data to the intelligent terminal, and comparing the acquired data with the data stored in the intelligent terminal;
(3-3) correspondingly operating the sputtering process according to the comparison result:
if the detected voltage value is in the set region, the sputtering process is continued;
if the detected voltage value is outside the set region, controlling the sputtering process to stop, and performing investigation and maintenance;
and (3-4) repeating the step (3-1) after the examination and the overhaul are finished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010610511.0A CN111719129A (en) | 2020-06-30 | 2020-06-30 | Automatic detection method for leakage of vacuum cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010610511.0A CN111719129A (en) | 2020-06-30 | 2020-06-30 | Automatic detection method for leakage of vacuum cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111719129A true CN111719129A (en) | 2020-09-29 |
Family
ID=72570132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010610511.0A Pending CN111719129A (en) | 2020-06-30 | 2020-06-30 | Automatic detection method for leakage of vacuum cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111719129A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11304629A (en) * | 1998-04-24 | 1999-11-05 | Ricoh Co Ltd | Leak detecting method for vacuum container, monitoring apparatus for film formation quality and continuous vacuum film formation apparatus |
| TW455681B (en) * | 2001-02-26 | 2001-09-21 | Taiwan Semiconductor Mfg | Method to automatically detect the gas leak of the process chamber |
| TW497195B (en) * | 2001-08-28 | 2002-08-01 | Applied Materials Inc | Method for detecting chamber breakdown by monitoring impedance |
| TW200535408A (en) * | 2004-04-28 | 2005-11-01 | Prodisc Technology Inc | Gas leak detecting apparatus |
| CN101431002A (en) * | 2007-11-08 | 2009-05-13 | 中芯国际集成电路制造(上海)有限公司 | Detection method for inner environment of manufacture process cavity |
-
2020
- 2020-06-30 CN CN202010610511.0A patent/CN111719129A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11304629A (en) * | 1998-04-24 | 1999-11-05 | Ricoh Co Ltd | Leak detecting method for vacuum container, monitoring apparatus for film formation quality and continuous vacuum film formation apparatus |
| TW455681B (en) * | 2001-02-26 | 2001-09-21 | Taiwan Semiconductor Mfg | Method to automatically detect the gas leak of the process chamber |
| TW497195B (en) * | 2001-08-28 | 2002-08-01 | Applied Materials Inc | Method for detecting chamber breakdown by monitoring impedance |
| TW200535408A (en) * | 2004-04-28 | 2005-11-01 | Prodisc Technology Inc | Gas leak detecting apparatus |
| CN101431002A (en) * | 2007-11-08 | 2009-05-13 | 中芯国际集成电路制造(上海)有限公司 | Detection method for inner environment of manufacture process cavity |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200929 |