45 56 8 1 Α7 Β7 經濟部智慧財產局負工消費合作社印裝 五、發明说明（） 發明領域_ 本發明與一種偵測反應室洩漏之方法有關，特別是 藉由一種可自動偵測壓力之變化以即時偵測出反應室漏沒 之方法。 發明背景：- 近年來’半導體晶圓廠已進展到8"晶圊的量產規 模，同時’也著手規劃1 2 11晶圓的建廠與生產’準備迎接另 一世代的產業規模。於是各廠不斷地擴增其產能與擴充其 廠區規模，似乎梢一停頓即會從此競爭中敗下陣來••所以， 推促著製程技術不斷地往前邁進，從0, 25 y m設計規格的 6 4Mb (百萬位元）DRAM (動態隨機記憶元件）記憶體密度 的此際技術起，又加速地往〇· 1 8以m規格的256M發展；甚至 0. 13 的1Gb (十億位元）集積度的dram元件設計也屢見 不鮮。亦即整個半導體產業正陷入尖端技術更迭的追逐 戰，在競爭t ，除了更新製程設備外，最重要的是維持礙 區正常運作的廠務工作之配合，而這兩方面的支出乃佔資 本財的最大宗。 一般而言’在廠務工作中所遭遇之最大問題為反應 室發生漏洩未能及時查出而導致產品良率的降低，並造成 晶圓的損壞°其中空氣的漏茂會沿著裂縫（s e a m s )的方向使 晶圓受到損壞。特別是反應室之漏洩難以察覺，往往祇有 在定期檢測或是機台進行離線（off-line)自我測試時，才 能察覺漏洩的發生。是以經常造成數以千計的晶圓受到損 壞，對V L S ί製程中產品之品質亦造成極大的影晌=然而由 2 本紙珉尺度逋用中國國家揉準（as) A4規格（2丨0x297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂· 455681 A7 B7 經濟部智慧財產局員工消f合作杜印製 五、發明説明（） 於反應室所接管線眾多，是以對其中任何組件或管線而 s ’皆有可能發生破損而成為漏，;餐來源（leak source)。 在目前所使用之反應室機台上，雖然可透過定期更 換其組件’以及逐項進行檢測以防止漏洩的發生。然而， 由於該偵測功能往往是以手動之方式進行，是以常常因為 人為之疏失忘了進行漏氣之偵測，而且一般為了滿足製程 之良率’在進行製程之前通常會先進行測漏偵測，對製程 工作人員而言’不僅多一道製程手續，且若忘了進行這步 驟，會造成製程良率風險之升高。是以若有一項方法能執 行自動偵測程序，對於減低人為疏失風險，或是降低工作 人員負擔均有莫大助益= 發明目的及概述： 鑑於上述之發明背景中’傳統上，反應室之氣體洩 漏’若於製程開始時沒有進行反應室氣體漏氣之偵測，— 般都要等到下一次的定期手動測漏，或是等到發現晶片良 率降低時才能發現，此時將會造成大批的晶原受到損害， 因此本發明之目的即是提供一種自動測漏之方法，在另一 批晶片進入反應室進行製程前，即藉由此方法來進行自動 氣體洩漏偵測。 本發明之目的在提供一種即時（real time)偵測反應 室漏洩之方法。 本發明之另一目的在提供一種防止因人為疏失忘記 進行氣體洩漏偵測，而造成晶圓良率降低之風險。 _____ _ n H 丨Γ,,4·H ,: I I___I : τ l^i I In--I——^ ί ί. ----n I— in I _ ! 、-·βΛ (請先閱讀背面之注意事項再填寫本頁)45 56 8 1 Α7 Β7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Field of the invention _ The present invention relates to a method for detecting a leak in a reaction chamber, especially by a method that can automatically detect pressure. Change to detect leaks in the reaction chamber in real time. Background of the Invention:-In recent years, 'semiconductor wafer fabs have progressed to the mass production scale of 8', and at the same time, they have also begun planning the construction and production of 1 2 11 wafers' in preparation for the industrial scale of another generation. As a result, each plant continuously expands its production capacity and expands its plant area. It seems that after a short pause, it will be defeated from this competition. • So, it is pushing the process technology to continue to move forward, from 0, 25 ym design specifications. From the current technology of 6 4Mb (million-bit) DRAM (Dynamic Random Access Memory) memory density, it has accelerated to 256M with a specification of 0.18; even 1Gb (billion-bit) of 0.13 Yuan) accumulation of dram element design is also common. That is, the entire semiconductor industry is falling into a chase of cutting-edge technology changes. In the competition t, in addition to updating process equipment, the most important thing is to maintain the coordination of factory work that hinders the normal operation of the area. The largest case. Generally speaking, the biggest problem encountered in factory work is that the leakage of the reaction chamber is not detected in time, which reduces the product yield and damages the wafer. The leakage of air will be along the seams (seams ) To the wafer. In particular, leaks in the reaction chamber are difficult to detect. Often, leaks can only be detected during periodic inspections or when the machine performs off-line self-tests. As a result, thousands of wafers are often damaged, and the quality of the products in the VLS process is also greatly affected. However, the standard of the Chinese paper (as) A4 (2 丨 0x297) Mm) (Please read the precautions on the back before filling this page) Order · 455681 A7 B7 Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Printed on the invention 5. Description of the invention () There are many pipelines connected to the reaction room. Any component or pipeline and s' may be damaged and become leaky; meal source (leak source). In the currently used reaction chamber machines, leakage can be prevented through periodic replacement of components' and inspections one by one. However, because the detection function is often performed manually, it is often forgotten to detect leaks because of human negligence, and generally in order to meet the yield of the process, the leak test is usually performed before the process. Detection, for the process staff, 'not only has one more process procedure, but if this step is forgotten, the risk of process yield will increase. Therefore, if there is a method that can perform the automatic detection procedure, it will be of great help to reduce the risk of human negligence or reduce the burden on the staff. = Purpose and summary of the invention: In view of the above background of the invention, 'the gas in the reaction chamber is traditionally Leaks' If no gas leakage in the reaction chamber is detected at the beginning of the process, it is generally necessary to wait until the next regular manual leak test, or wait until the wafer yield is found to decrease, which will cause a large number of The crystal original is damaged, so the object of the present invention is to provide an automatic leak detection method. Before another batch of wafers enters the reaction chamber for processing, an automatic gas leak detection is performed by this method. An object of the present invention is to provide a method for detecting leaks in a reaction chamber in real time. Another object of the present invention is to provide a method for preventing the risk of reducing the yield of a wafer due to human negligence in forgetting to perform a gas leak detection. _____ _ n H 丨 Γ ,, 4 · H,: I I___I: τ l ^ i I In--I —— ^ ί ---- n I— in I _!,-· βΛ (Please read first (Notes on the back then fill out this page)
3 本紙張尺度適用中國國家標準（CMS ) A4規梢厂(210X297公羡T 45 56 8 1 A7 B7 五、發明説明（） 本發明之方法相較於先前技術，具有諸多之優點， 首先，本發明之方法可大幅縮短因工作人員偵測反應室漏 洩之時間。其次，透過本發明之方法’可以在晶圓進入反 應室前確切進行反應室氣體洩漏偵測，確保晶圓製程程序 不會因氣體洩漏突發狀況而中斷’造成生產率下降，乃至 於晶圓之損害造成成本提升。此外，本發明可預先設定所 能接受之洩漏程度，因此可適用於不同之反應室機台’增 加了使用之彈性。 本發明之方法，首先當晶圊於反應室中製程完畢 後，在等待裝入另一批晶圊時，利用機台所發出之磊晶完 成訊號將一獨立閥門（I S ο 1 a t i ο n v a 1 V e )關閉’接著設定 一可接受之洩漏率與測漏時間’其中該洩漏率以電壓表 示，而該測漏時間視所需製程狀態而定，然後，量取該反 應室壓力並轉換成電壓值，其中該反應室壓力，是於反應 室内氣體完全柚除時，以流體壓力計量測該反應室所得之 壓力。接著，於測漏時間完成後’再量取該反應室壓力並 轉換成電壓值，並取兩者壓力的差值。接著’利用一比較 器進行預先設定之洩漏率與所量測差值之間之比較’若所 量測差值超出設定值即停止該製程並啟動一警示裝置3 圄式簡箪說明： 本發明之較佳實施例可藉由以下詳細之描述結合所 附圖示，將可輕易的了解上述内容及此項發明之諸多優 點，其中： 本紙張尺度通用t國圃家標準（CNS ) A4規格（2丨0X297公釐） ----------.-J------1T------緣 f {請先閱讀背面之注意事項再填寫本頁) 經濟部智葸財產局8工消費合作杜印製 4 5 5 6 8 1 a7 B7 五、發明説明（） 經 濟部I 智 慧 財 產 局； 1 第一圖為本 發 明 之 系 統概略 圖 0 第二圊為本 發 明 所 提 供方法 之 流 程圖 發明 進行即時偵測反應室漏洩之步 驟 Q 第三圖為本 發 明 所 提 供方法 之 動電 本發 明來自動進行反應室漏洩之伯 丨測 0 第四圖為本 發 明 所 提 供方法 之 比 較電 反應 室漏洩之偵測結果來決定是否 :強 制 停機 第五圖為本 發 明 所 提 供方法 之 流 程圖 發明 之最佳實施 例 進 行 即時偵 測 反 應室 驟。 圖號 對照說明： 102 反應室 104 獨 立 .閥門 106 真空幫浦 系 統 108 熱 電 耗 110 控制電路 301 完成訊號 302 計 時 器 303 電路開關 ( 常 閉 狀 態，由 計時； g控诗 304 電路開關 ( 常 閉 狀 態 > 由 電磁繼電i 305 電磁繼電 器 306 獨 立 閥門 307 獨立閥門 開 啟 訊 號 410 比較器 420,430 端點 440 電路開關 ( 常 開 狀 態，由 電磁! 繼電！ 發明 詳細說明： 控制） 控制） ，顯示根據本 路，顧示根據 路，顯示根據 〇 ，顯示根據本 漏洩之詳細步 消 it 合 5 社 印 製 本紙張尺度適用中國國家揉準（CNS > A4規格（210X297公釐） 經濟部智慧財產局員工消費合作社印级 455681 五、發明説明（） 本發明提供一個新的方法，以便在製程進行前可即時 偵測反應室之漏洩現象，以便在漏洩發生時能立刻進行檢 測與修復，以避免造成大量晶圓之損壞，有關本發明之詳 細說明如下所述。 請參照第一圖，該圖為本發明所提供方法之基本系統 概略圖，其中反應室102下接一獨立閥門104 ( Is〇iati(3n V a丨v e )’該獨立閥門1 〇 4由一控制電路11 0控制開關時機， 真空幫浦系統1 0 6連接反應室1 0 2，作為對反應室1 〇 2抽真空 之用，並以獨立閥門1 〇 4來決定柚真空之時機，熱電執1 〇 8 可測得反應室中之壓力大小。 請參照第二圖，該圖為本發明所提供方法之操作流程 圖*首先進行步驟210,當晶片於反應室102中完成製程後， 機台會發出一製程完成訊號，本發明之方法在接收到製程 完成訊號後，會接著進行步驟21 2，將測漏之獨立閥門1 〇 4 關閉，將反應室I 0 2與真空幫浦系統1 〇 6隔離’真空幫浦系 統106即不再對反應室1〇2柚真空，接著於步驟214設定所需 之測漏時間，一般洩漏率通常是以每分鐘壓力之上升大小 為單位，例如，洩漏率lmt/min是指反應室壓力於一分鐘内 會上升1 m t ( 1毫陶爾），此時若設定測漏時間為1 0分鐘， 且可接受之洩漏率為1 m t / m i η，因此該反應室於測漏時間1 0 分鐘内，反應室之壓力不得上升超過l〇mt(10毫陶爾），同 理，若設定測漏時間為20分鐘’可接受之洩漏率為 2 m t / m i η，因此該反應室於測漏時間2 0分鐘内’反應室之壓 力不得上升超過40mt(40毫陶爾），因此本發明之方法可依 不同之製程階段調整可接收洩漏程度’和測漏時間已達成 本紙張埴用中國固家棬準（CNS )以胁（2|〇χ2!?7公潑） I--------—. ------ir------^ I (請先聞讀背面之注意事項再填寫本頁) A7 4 5 5 6 8 1 ----- 五、發明説明（） "—----- 最大之使用彈性，若在測漏過程中發現洩漏程度超過可容 許之壓力上升範圍1本發明之方法會於步驟2丨6中判斷出此 受測反應室會漏氣，接著於步驟2 1 8中送出一停機訊號，強 制機台停機接受檢修，由於在整個測漏過程與判斷過程 中，均以自動方式進行，人工均不介入，因此人為疏失干 擾可減至最小，再加以本發明之方法可於每一批晶圓製程 完成後，即進行一次測漏工作，如次一來可將因Ά漏而造 成之晶®損耗風險降至最低。 請參照第三圖，該圖為本發明所提供方法之自動電 路，首先依據製程洩漏率可容許條件，於計時器3 0 2中輸入 所欲測漏之時間長度，接著當機台完成晶®製程後會送出 一完成訊號3 0 1給本發明之自動偵測電路，當偵測電路收到 此完成訊號301後，會將計時器302啟動，接著啟動電磁繼 電器3 0 5將獨立閥門端之電路開關3 0 4開啟，造成獨立閥門 3 0 6關閉，接著即以一預先設定之測漏時間來進行測漏工 作，當預設時間到達，會將電路開關3 0 3開啟，以終止測漏 工作，恢復機台原先狀態，系統並送出一獨立閥門開啟訊 號 3 0 7。 經 濟 部 智 慧 財 產 局 員 X 消 費 合 作 社 印 製 參照第四圖，該圖為本發明所提供方法之自動停機電 路，利用一比較器4 1 0達成停機與否之決定，其中於端點4 2 0 預先輸入一依據製程可容許洩漏程度所輸入之觸發停機壓 力，在此最佳具體實施例中是將此壓力依一定比例轉成電 壓來表示，例如，若設定測漏時間為1 0分鐘，且可接受之 洩漏率為1 m t / m i η，因此該反應室於測漏時間1 0分鐘内，反 應室之壓力不得上升超過10 mt (10毫陶爾），亦即觸發停機 本紙張尺度適用t國國家揲皁（CMS > A4说樁（2丨0X297公釐） 4 5 5 6 81 A7 _______ B7 五、發明説明（） 為 特 伏 T- X 為 比 換 轉 力 壓 與 壓 -^9. 定 設 若 5¾ 陶 毫 ο 1—ί 為 力 壓 即 壓 電 機 .¾ 發 觸 之 定 設 所 ο 2 4 點 端 時 此 爾 陶 毫 為差 面 方 \ 另 ο 特 伏 點 來 是 差 力 壓 此 漏 測 於 力 1 壓力 之壓 室室 m^ 反反 自之 來得 收測 接所 是時 30始 1X 開 之力 得壓 獲此 所將 時並 此， 將差 ， 力 力壓 壓出 之得 室 ’ 應較 反比 測作 量力 時壓 隨之 後得 始測 開相 漏最 測與 於力 並壓 較 ’ 比 壓作 電力 成壓 轉漏 例¾ 比之 同許 相容 依可 差室 應 反 定 設 先 預 與 差 力 壓 此 將 著 接 態 狀 ，*/ 漏 之 台 機 該 測 偵 以 會機 » 關 力厶° 壓機 漏此 i 字 * »/ 1厂 之， 4 虎 Ur ^ 容 可 室 應 反 定 設 先 預 出 . 關 超ο 差44 力關 壓開 時路 此電 若將 訊 機 停 制 強 1 出 傳 並 閉 於 用 。 應 因法 原方 之之 漏明 洩發 成本 造將 復當 修 以 製 設 假 先 首 σ 上 台 機 型 中 容得2 可不30 率度器 漏度時 洩幅計 程升於 為 t 件lm 條於 許大 之 入 輸 即時 1 , 漏為 Tlini 度 /時長 t ί m同 & -時 上此成 力因完 壓，台 室鐘機Μ ^ 反 1 著 内為接 鐘度邊 ,艮鍾 分 分 間 經濟部智慧財產局員工消費合作社印製 晶圍製程後會送出一完成訊號301，在P5000型機台上此完 成訊號是在當晶圊從反應室移出，機台門打開同時將完成 訊號3 01送出給本發明之自動偵測電路’當偵測電路收到此 完成訊號301後，會啟動計時器302’接著啟動電磁繼電器 3 0 5將獨立閥門端之電路開關3 0 4開啟，造成獨立閥門3 0 6 關閉，接著即以一預先設定丨〇分鐘之測漏時間來進行測漏 工作，當1 0分鐘到達，會將電路開關3 0 3開啟，以終止測漏 工作，恢復機台原先狀態。於自動停機電路上，其中於端 點4 2 0預先輸入一依據製程可容許洩漏程度所輸入之觸發 停機壓力，在此例中製程洩漏率可容許條件為1 in t /m i η，測 8 本紙張尺度適用中國國家標準（CNS ) Α4规格（210X297公釐） I . 欢------tr------Λ1 (請先聞讀背面之注$項再填寫本頁) 4 5 5 6 8 1 經濟部智慧財產局員工消費合作社印裝 A7 B7 五、發明説明（） 〜-- 漏時間為10分鐘，因此觸發強制停機壓力為丨0mt，並將此 壓力依一定比例轉換成電壓0. 1伏特（轉換比為10伏特對 lOOOmt)，另一方面，於端點43〇顯示自反應室之壓力差， 並經由一比較器4 I 〇 ,若此時端點4 3 0之壓力差大於強制停 .機壓力為lOmt，比較器41〇會輸出一強制停機訊號，並關閉 電路開關440，強制機台停機等候檢修。 參閱第五圖為本發明所提供方法之流程圖，顯示根 據本發明之最佳實施例，進行即時偵測反應室漏洩之詳細 步驟，當一批晶圓製程完成後，反應室在等待下一批晶圊 製程時’本發明會根據機台所發出之製程完成訊號，來即 時進行沒漏偵測工作，當於步驟5 1 〇機台製程完成後，首 先’於步驟51 2機台會輪出一製程完成訊號，此時於步驟514 本發明之方法在接收到此完成訊號後，會於步驟5丨6將獨立 閥門切換成關閉，切斷反應室與真空系統之連接，真空系 統不再對反應室進行柚真空動作，並進行蜊漏預設值之設 定動作*根據不同之製程洩漏率容忍度來設 \弋預設值，隨 後，進行步驟51 8之洩漏率量測，首先，該古 a ± ^ 方法會先讀取測 漏開始時之壓力初始值，並於偵測過程中陆士 思時讀取反應室 之壓力，並與壓力初始值相較兩者之懕六萁_ 没刀差，且將此壓力 差值依一定比例轉成電壓值’並於步驟5 2 0中將此電麼值與 預設可接受洩漏最大範圍之停機觸發信號加以比較，接著 本發明之方法會於步驟522進行壓力差值與停機觸發信號 加以比較’若洩漏率小於停機觸發信號在可接收範圍内， 於步驟524將獨立間門打開，此時即完成洩漏偵濟丨工作，否 則若洩漏率大於停機觸發信號超出可接受範圍，於步驟526 中國國i橾準（CNS〉( 210X297公釐) (請先閱讀背面之注意事項再填寫本頁) ,ιτ 嗖！ A7 455681 _ B7 五、發明説明（） 會發出一強制停機訊號，強制停機接受檢測。 本發明相較於先前技術，具有諸多之優點，首先’ 本發明之方法可降低因人為疏失忘記進行測漏所造成之晶 片損害風險，有效節省生產成本。在先前技術中’要進行 測漏工作時，通常需以人工手動之方式才可進行偵測’如 此一來，人為因素會是一個重大影響原因。其次，對先前 技術的偵測功能而言，對於工作人員而言等於多一道製程 程序，然而透過本發明之方法，可以在反應室製程完成後， 自動執行測漏工作，對於工作人員負擔可大大降低。 本發明雖以一較佳實例闡明如上’然其並非用以限定 本發明精神與發明實體，僅止於此一實施例爾°對熟悉此 領域技藝者，在不脫離本發明之精神與範圍内所作之修 改，均應包含在下述之申請專利範圍内。 Γ -------1T-------嗛 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家揉準（CNS ) A4規格（2丨OX29?公釐）3 This paper size applies the Chinese National Standard (CMS) A4 gauge factory (210X297 public T 45 56 8 1 A7 B7 V. Description of the invention) Compared with the prior art, the method of the present invention has many advantages. First, this paper The method of the invention can greatly shorten the time for the staff to detect the leakage of the reaction chamber. Secondly, the method of the present invention can accurately detect the gas leakage of the reaction chamber before the wafer enters the reaction chamber, ensuring that the wafer process procedure will not be caused by Sudden gas leaks interrupted 'resulting in reduced productivity and even damage to wafers resulting in increased costs. In addition, the present invention can pre-set acceptable leakage levels, so it can be applied to different reaction chamber machines' increasing use In the method of the present invention, first, after the crystals are finished in the reaction chamber, while waiting to load another batch of crystals, an epitaxial completion signal issued by the machine is used to separate an independent valve (IS ο 1 ati ο nva 1 V e) Close 'Then set an acceptable leak rate and leak test time', where the leak rate is expressed in voltage, and the leak test time is determined by the required system Depending on the state, the pressure in the reaction chamber is measured and converted into a voltage value, where the pressure in the reaction chamber is measured by the fluid pressure when the gas in the reaction chamber is completely removed. Then, the pressure in the reaction chamber is measured. After the leak test time is completed, 'the pressure of the reaction chamber is measured again and converted into a voltage value, and the difference between the two pressures is taken. Then, a comparator is used to compare the preset leak rate and the measured difference. 'If the measured difference exceeds the set value, stop the process and start an alarm device. 3 Brief description: The preferred embodiment of the present invention can be easily described by the following detailed description in conjunction with the accompanying drawings. Understand the above content and the many advantages of this invention, among them: The paper standard is universal t national garden standard (CNS) A4 specification (2 丨 0X297 mm) ----------.- J --- --- 1T ------ Yuan f (Please read the notes on the back before filling out this page) Printed by the 8th Department of Economic Cooperation, Intellectual Property Department of the Ministry of Economic Affairs, 5th, 6th, 8th, a7, B7 V. Description of Invention （） Intellectual Property Bureau of the Ministry of Economic Affairs; 1 The first picture is the outline of the system of the invention 0 The second is a flowchart of the method provided by the present invention. The step Q of the invention for detecting the leakage of the reaction chamber in real time. The third figure is the method of the invention provided by the invention. The fourth figure is a comparison of the detection results of the leakage of the electric reaction chamber in the method provided by the present invention to determine whether to force the shutdown. The fifth figure is a flowchart of the method provided in the present invention. The preferred embodiment of the invention performs the instant detection of the reaction chamber. Comparative description of drawing numbers: 102 reaction chamber 104 independent. Valve 106 vacuum pumping system 108 thermal power consumption 110 control circuit 301 completion signal 302 timer 303 circuit switch (normally closed state by timing; g control poem 304 circuit switch (normally closed state) > Electromagnetic relay i 305 Electromagnetic relay 306 Independent valve 307 Independent valve open signal 410 Comparator 420, 430 End point 440 Circuit switch (Normally open state, electromagnetic! Relay! Control details) Control), display according to this Road, Gu Shi according to the road, show according to 0, show the detailed steps according to this leak. It is printed by 5 companies. The paper size is applicable to China National Standards (CNS > A4 specification (210X297 mm). Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. Consumption Cooperative Printed Level 455681 V. Description of the Invention The present invention provides a new method to detect leaks in the reaction chamber immediately before the process, so that when leaks occur, they can be detected and repaired immediately to avoid causing a large number of crystal The damage, the detailed description of the present invention is as follows. Please refer to the first figure, which is a schematic diagram of the basic system of the method provided by the present invention, in which the reaction chamber 102 is connected to an independent valve 104 (Is〇iati (3n V a 丨 ve) 'The independent valve 104 is controlled by a control circuit 110 to switch timing. The vacuum pump system 106 is connected to the reaction chamber 102 and used to evacuate the reaction chamber 100. The valve 1 〇 4 determines the timing of the vacuum of the grapefruit, and the thermoelectric actuator 1 008 can measure the pressure in the reaction chamber. Please refer to the second figure, which is a flowchart of the operation of the method provided by the present invention. * First step 210, After the wafer has completed the process in the reaction chamber 102, the machine will send a process completion signal. After receiving the process completion signal, the method of the present invention will proceed to step 21 2 to close the independent valve 1 04 for leak detection. Isolate the reaction chamber I 0 2 from the vacuum pumping system 1 06. The vacuum pumping system 106 no longer vacuums the reaction chamber 10 2 and then sets the required leak detection time at step 214. Generally, the leakage rate is usually Above pressure per minute The size is a unit. For example, the leakage rate lmt / min means that the pressure in the reaction chamber will rise by 1 mt (1 mTauer) within one minute. At this time, if the leak detection time is set to 10 minutes, and the acceptable leakage rate is 1 mt / mi η, so within 10 minutes of the leak detection time of the reaction chamber, the pressure of the reaction chamber must not rise more than 10 mt (10 mTauer). Similarly, if the leak detection time is set to 20 minutes, it is acceptable. The leakage rate is 2 mt / mi η, so the reaction chamber's pressure must not rise more than 40 mt (40 mTauer) within 20 minutes of the leak detection time. Therefore, the method of the present invention can be adjusted according to different process stages 'Acceptable leakage level' and leak detection time have reached the cost of paper, using China Gujia Standard (CNS) to threaten (2 | 〇χ2 !? 7 public splash) I ----------. --- --- ir ------ ^ I (Please read the precautions on the back before filling out this page) A7 4 5 5 6 8 1 ----- V. Description of the invention () " ----- -Maximum use flexibility, if the leakage is found to exceed the allowable pressure increase range during the leak test 1 The method of the present invention will determine in step 2 丨 6 that the reaction chamber to be tested will Gas, and then send a stop signal in step 2 1 8 to force the machine to stop for maintenance. Because the entire leak detection process and judgment process are carried out automatically without manual intervention, human interference can be reduced to Minimally, the method of the present invention can be used to perform a leak test after each batch of wafers is completed. If the next time, the risk of crystal loss due to leakage can be minimized. Please refer to the third diagram, which is the automatic circuit of the method provided by the present invention. First, according to the allowable conditions of the process leakage rate, enter the desired length of the leakage in the timer 3 02, and then complete the crystal when the machine is finished. After the process, a completion signal 3 0 1 will be sent to the automatic detection circuit of the present invention. When the detection circuit receives the completion signal 301, it will start the timer 302, and then start the electromagnetic relay 3 0 5 to separate the valve end. The circuit switch 3 0 4 is turned on, causing the independent valve 3 06 to be closed, and then the leak detection is performed with a preset leak detection time. When the preset time is reached, the circuit switch 3 0 3 is opened to terminate the leak detection. Work, restore the original state of the machine, the system sends an independent valve opening signal 3 07. Member of the Intellectual Property Bureau of the Ministry of Economic Affairs X Consumer Cooperative printed a reference to the fourth figure, which is the automatic shutdown circuit of the method provided by the present invention. A comparator 4 1 0 is used to reach the decision of whether to shut down or not. Enter a trigger shutdown pressure input according to the allowable leakage of the process. In this preferred embodiment, this pressure is converted into a voltage according to a certain proportion. For example, if the leak detection time is set to 10 minutes, and The accepted leakage rate is 1 mt / mi η, so the pressure of the reaction chamber must not rise more than 10 mt (10 mTauer) within 10 minutes of the leak detection time of the reaction chamber. National Soap (CMS > A4 said pile (2 丨 0X297 mm) 4 5 5 6 81 A7 _______ B7 V. Description of the invention () Tv X is specific pressure and pressure-^ 9. Suppose 5¾ 陶 Ｍο 1—ί is a force-pressing and pressing motor. ¾ The setting point of the contact ο 2 4 points at the end of this is the difference surface square \ Another ο volt point is the differential pressure of this missing test Pressure of pressure 1室 室 m ^ Inversely, the measurement was received from 30 to 1X. The force must be obtained when the force is obtained, and the difference will be worse. The force obtained by the force is more inverse than when measured. After the pressure is followed, the open phase leakage is measured and the force is measured and compared. 'Specific pressure is used as electricity to form a pressure to leakage example. ¾ It is compatible with the same. The differential chamber should be set in advance and the differential pressure will be connected. State, * / leakage of the machine should be detected by the machine »Off force 厶 ° Press machine leaks this i word *» / 1 of the factory, 4 Tiger Ur ^ Rongke room should be pre-set out in advance. Guan Chao ο Difference 44 When the power is turned off and the pressure is turned on, the telephone will stop the transmission and send it to a strong 1 for transmission. It should be repaired due to the leaked cost of the original method. In the previous model, the capacity was 2 but the leakage rate was increased to t pieces when the rate of leak was 30. The length of the input was 1 at the time of Xu Dazhi's loss, and the leakage was Tlini degree / time t ί m 同 &- Due to the completion of the pressure, the desk clock M ^ is reversed, and the clock is connected to the inside, and the clock is divided into minutes. The Ministry of Intellectual Property Bureau of the People's Republic of China will send a completion signal 301 after the printing of the wafer processing process. On the P5000 machine, the completion signal is when the cymbal is removed from the reaction chamber. The machine door is opened and the completion signal 3 01 is completed. Send to the automatic detection circuit of the present invention 'When the detection circuit receives this completion signal 301, it will start the timer 302' and then start the electromagnetic relay 3 0 5 to open the circuit switch 3 4 of the independent valve end, resulting in an independent valve 3 0 6 is turned off, and then the leak detection is performed with a preset leak time of 10 minutes. When 10 minutes arrive, the circuit switch 3 0 3 will be turned on to terminate the leak detection and restore the original state of the machine. . On the automatic shutdown circuit, a trigger shutdown pressure input according to the allowable leakage degree of the process is input in advance at the end point 4 2 0. In this example, the allowable condition of the process leakage rate is 1 in t / mi η, measured 8 Paper size applies Chinese National Standard (CNS) Α4 specification (210X297mm) I. Huan ------ tr ------ Λ1 (Please read the note on the back before filling in this page) 4 5 5 6 8 1 A7 B7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () ~-The leakage time is 10 minutes, so the forced shutdown pressure is 丨 0mt, and this pressure is converted into a voltage according to a certain proportion. 0.1 volts (conversion ratio is 10 volts to 1000 mt), on the other hand, the pressure difference from the reaction chamber is displayed at the end point 43 °, and passed through a comparator 4 I 〇, if the pressure at the end point 4 3 0 The difference is greater than the forced shutdown. The machine pressure is 10mt, and the comparator 41 will output a forced shutdown signal, and close the circuit switch 440, forcing the machine to shut down and wait for maintenance. Refer to the fifth figure for a flowchart of the method provided by the present invention, which shows the detailed steps for real-time detection of the leakage of the reaction chamber according to the preferred embodiment of the present invention. After a batch of wafer processes is completed, the reaction chamber is waiting for the next During the batch process, the present invention will perform real-time leak detection according to the process completion signal sent by the machine. When the machine process is completed in step 5 10, the machine will be rotated out in step 51 first. A process completion signal, at this time at step 514. After receiving the completion signal, the method of the present invention will switch the independent valve to close at step 5 丨 6, cut off the connection between the reaction chamber and the vacuum system, and the vacuum system is no longer aligned. The reaction chamber performs a vacuum action of the grapefruit and sets the default value of the clam leakage. * The preset value is set according to the tolerance of the leakage rate of different processes. Then, the leakage rate measurement of step 51 8 is performed. First, the ancient The a ± ^ method will first read the initial pressure value at the beginning of the leak test, and during the detection process, Lu Shisi will read the pressure in the reaction chamber and compare it with the initial pressure value. And The pressure difference value is converted into a voltage value according to a certain ratio, and the electric value is compared with the shutdown trigger signal with the preset maximum acceptable leakage range in step 5 2 0, and then the method of the present invention is performed in step 522. Compare the pressure difference with the shutdown trigger signal. 'If the leakage rate is less than the shutdown trigger signal is within the acceptable range, open the independent compartment door at step 524, and then the leak detection is completed. Otherwise, if the leakage rate is greater than the shutdown trigger signal, Beyond the acceptable range, in step 526 China National Standards (CNS> (210X297 mm) (Please read the precautions on the back before filling out this page), ιτ 嗖! A7 455681 _ B7 5. The invention description () will be issued A forced shutdown signal, forced shutdown to be tested. Compared with the prior art, the present invention has many advantages. First, the method of the present invention can reduce the risk of wafer damage caused by human error and forget to perform leak detection, and effectively save production costs. In the prior art, 'when leak detection is required, it is usually required to perform manual detection'. In this way, human factors will This is a major cause of impact. Secondly, for the detection function of the prior art, it is equivalent to one more process for the staff. However, the method of the present invention can automatically perform leak detection after the reaction chamber process is completed. The burden on the staff can be greatly reduced. Although the present invention is clarified as above with a preferred example, it is not intended to limit the spirit and inventive entity of the present invention, but only to this embodiment. For those skilled in the art, Modifications made without departing from the spirit and scope of the present invention should be included in the scope of patent application below. Γ ------- 1T ------- 嗛 (Please read the notes on the back before filling (This page) Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to the Chinese National Standard (CNS) A4 (2 丨 OX29? Mm)