經濟部中夹樣_局員工消費合作社印製 495896 A7 __· —_B7______ 7、發明説明（） 5-1發明領域： 本發明係有關於一種半導體晶片週邊區域之缺陷的谓 測裝置及方法，特別是有關於一種，可同時檢測晶片週邊 區域之破損及裂縫的整合式工作平台及偵測方法。 5-2發明背景： 隨著半導體晶圓精密度的提高，其相應的製程也面臨 著嚴苛的挑戰。或因半導體元件的密集度增高、積體電路 的佈局日益複雜化，使得現今的半導體製程變得極為繁 複。當半導體各分段製程進行整合時，常需要將晶圓從不 同的製程機器中移出或移入，而晶圓週邊的區域也常在這 樣的情況下發生損傷。另外，即便是在同一台機器中加工 晶圓，也會因為一些意外的情形使得晶圓發生了缺陷。一 般而言，在半導體製程中，晶圓週邊所發生的缺陷大致可 分為破損以及裂縫等兩種形式。所謂破損，指的是晶圓週 邊區域發生一定面積之崩壞。至於裂縫，則是指晶圓週邊 區域發生了細長的裂縫，但並未有部份面積崩壞的情形。 其實，不論是何種模式的損壞，都很容易造成整片晶圓的 失效，而導致製造成本大量的浪費。 傳統上針對上述缺陷的檢查，係以肉眼的方式進行。 也就是說，以人力透過觀察室，於各製程步驟間逐片的檢 查晶圓週邊區域有無缺陷或損壞發生。毫無疑問的這樣的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -訂- 1Γ 495896 經濟部中央標準局員工消費合作社印裝 A7 B7 五、發明説明（) 方式既無效率，準確率亦不甚佳。甚或，當晶圓週邊區域 發生裂縫時，肉眼檢查的方式將完全失效。因此，之後發 展出了以機器代替人力的檢查方式。 參閱第一圖，其中表示傳統上利用一組紅外光偵測裝 置，檢測晶圓週邊區域之缺陷的示意圖。如圖中所示，晶 圓102繞著中心軸104旋轉，並於晶圓102之周邊區域的 附近安置一組紅外光偵測裝置。該紅外光偵測裝置包含一 個位於晶圓1 〇 2上方的紅外線發射器1 〇 6，與一個位於晶 圓1 02下方的紅外線接收器1 〇8。當偵測開始時，令晶圓 1 02繞著轉軸1 〇4旋轉，若晶圓週邊發生破損，由紅外線 發射器1 0 6所射出之紅外光就會在沒有障礙的情況下達到 紅外線接收器1 0 8處。當紅外線接收器1 〇 8接收到紅外光 時’即表示晶圓102的週邊區域發生破損了。 然而，進一步研究上述之習知技藝，將會發現傳統的 紅外偵測裝置存在有許多亟需改進的缺點。首先，針對晶 圓的破損模式做更深入的討論，晶圓週邊的破損模式大概 可以分成兩種類型。第一種類型的破損改變了晶圓的直 徑’ 一般來說此破損模式之斷面橫跨晶圓之上下表面。由 於在此種破損模式下縮減了晶圓的直徑，故由紅外線發射 器1 06所射出之紅外光才能夠直接通透晶圓並傳送至紅外 光接收器1 08處。至於第二種類型的破損，則不會改變晶 圓的直徑。一般來說此破損模式之斷面僅與晶圓之上表面 或下表面相交，如第一圖所示。此種破損模式並不會縮減 晶圓的直從’是故’即便晶圓102發生了此種的破損，么 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)Sample in the Ministry of Economic Affairs_Printed by the Bureau ’s Consumer Cooperatives 495896 A7 __ · —_B7 ______ 7. Description of the invention () 5-1 Field of the invention: The present invention relates to a device and method for measuring defects in the peripheral area of a semiconductor wafer, especially The invention relates to an integrated working platform and a detection method that can simultaneously detect damage and cracks in the peripheral area of a chip. 5-2 Background of the Invention: With the improvement of the precision of semiconductor wafers, their corresponding processes are also facing severe challenges. Or due to the increased density of semiconductor components and the increasingly complicated layout of integrated circuits, today's semiconductor processes have become extremely complicated. When semiconductor segmentation processes are integrated, it is often necessary to remove or move wafers from different process machines, and the area around the wafer is often damaged under such conditions. In addition, even if the wafer is processed in the same machine, the wafer may be defective due to some unexpected circumstances. Generally speaking, in the semiconductor process, defects occurring around the wafer can be roughly divided into two types: damage and cracks. The so-called breakage refers to the collapse of a certain area around the wafer. As for cracks, it means that there are slender cracks in the peripheral area of the wafer, but some areas are not broken. In fact, regardless of the mode of damage, it is easy to cause the failure of the entire wafer, which leads to a lot of waste in manufacturing costs. Traditionally, the inspection of the above defects is performed with the naked eye. In other words, through the observation room by manpower, inspect the wafer peripheral area for defects or damages one by one between each process step. There is no doubt that this paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling out this page) -Order-1Γ 495896 Staff Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs Printed A7 B7 V. Description of the invention () The method is neither efficient nor accurate. Even when cracks occur in the area around the wafer, the visual inspection method will be completely invalidated. Therefore, inspection methods in which machines were used instead of manpower were developed. Refer to the first figure, which shows a schematic diagram of traditionally using a group of infrared light detection devices to detect defects in the area around the wafer. As shown in the figure, the wafer 102 rotates around the central axis 104, and a set of infrared light detection devices is arranged near the peripheral area of the wafer 102. The infrared light detection device includes an infrared emitter 106 located above the wafer 102 and an infrared receiver 108 located below the wafer 102. When the detection starts, the wafer 102 is rotated around the rotation axis 104. If the wafer periphery is damaged, the infrared light emitted by the infrared emitter 106 will reach the infrared receiver without any obstacles. 1 0 8 places. When the infrared receiver 108 receives infrared light ', it means that the peripheral area of the wafer 102 is damaged. However, further study of the above-mentioned conventional techniques will reveal that the traditional infrared detection device has many shortcomings that need to be improved. First of all, for a more in-depth discussion on the damage modes of wafers, the damage modes around the wafer can be roughly divided into two types. The first type of damage changes the diameter of the wafer. Generally, the cross section of this damage mode spans the top and bottom surfaces of the wafer. Since the diameter of the wafer is reduced in this damage mode, the infrared light emitted by the infrared emitter 106 can directly pass through the wafer and be transmitted to the infrared light receiver 108. As for the second type of damage, the diameter of the crystal circle is not changed. Generally, the cross section of this damage mode only intersects the upper or lower surface of the wafer, as shown in the first figure. This damage mode does not reduce the direct cause of the wafer. Even if such damage occurs to the wafer 102, why does this paper size apply to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read first) (Notes on the back then fill out this page)
A7A7
五、發明説明（） 線發射裔106所射出之紅外光也無法通透晶圓而傳送至 紅外光接收器1 08處。所以在第二種的破損模式下，傳統 之二外光偵 '測裝置將失去效用。另外，傳統之紅外光偵測 裝置必須要在晶圓直徑縮減的情況下才能發生效用。因 此，當晶圓週邊區域發生裂縫時，由於這些裂縫並不會造 成曰曰圓直徑的縮減，甚至連晶圓外觀都不會改變。所以在 晶圓週邊發縫的情形下，傳統之紅外光㈣裝置亦將 元全失去作用。 綜上所述，如何提出可以克服偵測死角之裝置或方 法，以成為此領域中日益重要的問題。甚至，若能將多種 不同偵測模式的債測儀器，整合在一處機動性高功與能性 強的工作平台上，將會對此領域中半導體製程的改進提供 更大的助益。 5-3發明目的及概述： 經濟部中央標準局員工消費合作社印製 本發明之目的為在提供一種能偵測出半導體晶片週邊 區域之多種形態的破損，及位於該週邊區域之裂痕，的偵 測裝置。並透過適當的結構，將上述兩種檢測模式整合成 一個工作平台。再根據該工作平台，設計出一套兼顧效率 與正確率的晶圓缺陷檢驗方法。 本發明揭露了一種偵測半導體晶圓破損及裂縫之裝置 及方法。其中用以偵測破損的裝置，係透過安裝多組不同 角度的光感應偵測元件於鄰近晶圓週邊處，並配合可吸附 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 495896 A7 B7 五、發明説明（ 日日圓之紅轉支撐裝置，以提供客 七^ 杈供多種不同破損模式的檢測能 力。至於偵測裂縫裝置，則利 J刃用超音波偵測裝置，並配合 上述之旋轉支撐裝置’以檢測該待檢測晶圓週邊是否產生 裂缝。而偵測晶園破損裝置、俄測晶圓裂縫裝[可與用 以提供運算及報表製作能力之運墓 、 逆异處理兀件、允許由肉眼 檢視晶圓之觀察室等裝置，整合点 .^ ^ τ σ戍早一的工作平台。最後， 再根據本發明之整合式工作平△，與 ^ ^ F卞口，k供一套檢查晶圓缺陷 之方法。 明 說 單 簡 式 圖 (請先閲讀背面之注意事項再填寫本頁) 第 圖 第 圖 之 損 破 域 區 邊 週。 圓圖 晶意 測示 偵之 以置 用裝 ， 測 中偵 統光 傳外 為紅 損破域 區 邊 週。 圓圖 晶意 測示 偵之 以置 用裝 ， 測 中偵 明應 發感 本光 為之 超之缝 裂 邊週 圓 晶 ο 測圖 偵視 以頂 用之 , 置 中裝 明測 發偵 本波 為音 圖 A三 第 ， 置 中裝 明測 發偵 本波 為音 圖 B三 第 圖 四 第 -訂 經濟部中央標準局員工消費合作社印製 圖 圖 五 六 第 第 ， 置 中裝 明測 發偵 本之 為損 用之用的 超之縫 裂 邊週 圓 晶 ο 測圖 偵視 以側 破 與 縫 裂 邊 週。 圓圖 晶意 測示 偵構 以結 破 測 與 偵 縫 之 裂 損 邊。破‘ 週圖與 圓意縫 晶示裂 測構邊 偵結週 以視圓 用頂晶 ，的， 中置中 明裝明 發測發 本之本 為損為 -線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 495896 A7 B7 五、發明説明（ 方法 5-5發明詳細說明： 本發明將以一個包含多組的光感應偵測元件 例，來說明如何偵測晶圓周邊區域之破損。至 之實施 a晶圓闽 區域之裂縫，將透過一超音波偵測裝置之實施例，Q邊 發明之作法。再透過單一的偵測裝置，提出 4明 、 之整合式偵測裝置。最後，依據本發明之整合 μ评 .. 、偵測$ # 提出一檢測方法’以說明如何利用本發明進行 、夏 與裂縫檢測。 < 知 說明本 精神下 請 閱· 讀 背 注 意 事 再 t 經濟部中央標準局員工消費合作社印製 第二圖表示本發明中半導體晶圓破損偵測裝 夏之不专 圖，其中包含繞著中心軸204轉動之晶圓202，爲& 、 久兩組光 感應摘測元件（本實施例以兩組光感應偵測元件 丁求說明本 發明，而此光感應偵測元件之數量亦可依使用者的需要增 加）。每組光感應偵測元件包含一個光波發射裝置與一個 光波接收裝置，其中光波發射裝置可發射用以偵測晶圓的 光束（例如，紅外光、雷射光等），而光波接收裝置則用 以接收由光波發射裝置所發出的光束並藉以判斷晶圓的週 邊疋否產生破損。如第二圖所示，第一光波發射裝置21〇 與第一光波接收裝置21 2組成第一光感應偵測元件，而第 二光波發射裝置20 6與第二光波接收裝置208組成第二光 感應偵測元件。 當偵測開始時，藉由一旋轉裝置（同第三B.圖之1 04 ) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） 495896 A7 B7 五、發明説明（ 帶動晶圓202下方之支撐結構（同苐三b圖之1〇4)，而 該支撐結構可透過抽真空或靜電等方式吸附晶圓，使晶圓 202繞著中心軸204轉動。再利用安裝於晶圓週邊，並與 晶圓表面成不同入射角之第一光感應偵測元件與第二光 感應偵測元件，偵測是否發生破損。當晶圓周邊產生之破 損改變了晶圓的直徑時（第一類型之破損），第一光波發 射裝置210與第二光波發射裝置206所射出之光束，皆可 自由的通過晶圓202表面，為第一光波接收裝置212與第 二光波接丈裝置208所接收。當任一個光波接受裝置，收 到由光波發射裂置所傳來之光束時，即代表在晶圓2〇2的 週邊區域發生了破損。若此時晶圓周邊產生之破損並未改 變晶圓的直徑時（第二類型之破損），即亦味著破斷面會 與晶圓表面成斜線相交，如第二圖所示。# [光波 裝置21G所射出之光束被晶s m阻播時，第二光 裝置206射出之光束，會因為安放於不 射 - ^ ^ . 个I"立置而能直接射 一個光波接受 入第二光波接受裝置208中。同樣的 (請先閱讀背面之注意事項再填寫本頁) -Φ 經濟部中央標準局員工消費合作社印製 裝置，收到由光波發射裝置所傳來之光 即代砉 圓202的週邊區域發生了破損。所以透過多組— 曰曰 位置之光感應偵測元件，可以成功的偵測到$1置於不同 法測出的破損情形。至於光感應偵測 ▲知技藝所無 丁的數詈；5^ 位置，則可依使用者的需要而加以調整。 文故的 第三Α圖為半導體晶圓裂縫偵測裝置之、 傳動裝置與支撐結構總成！ 07 (細部組成見頂視圖，包含 晶圓101，與超音波偵測裝置1〇5。 第三B圖）、運仃偵_時，曰曰曰圓1〇1 本紙張从適财關家標準（CNS)八4祕（21GX297^j- ^^896五、發明説明（ 經濟部中央榡準局員工消費合作社印製 由傳動裝置與支撐結構總成1〇7所帶動而旋轉，並將超音 波偵測裝置1 05安置於晶圓週邊下方的位置。利用超音波 偵測裝置105對晶圓1〇1表面發射超音波，並收集由i圓 1〇1表面所反射之超音波訊號。再將所收集之訊號轉換成 肉眼可見的圖像，並依據反射超音波的成像圖來判斷是否 有裂縫發生。當晶圓週邊沒有缺陷時，反射超音波之成像 會十分均勻，假若晶圓101週邊區域中含有裂縫ι〇3，此 時’反射超音波之成像將會產生雜訊.且變得不規則。由此， 即可判斷出晶圓1 〇 1之週邊區域產生了裂縫。 第三圖B為為半導體晶圓裂縫偵測裝置之側視圖，其 中支撐裝置102、傳動皮帶106、旋轉裝置1〇4槿成 古# 結構總成m(見第三a圖）。支撐裝置102== 或是靜電的方式吸附晶圓1〇1，旋轉裝置1〇4(例如，馬達） 透過傳動皮帶106,使得支撐裝置102與晶圓1〇1做旋轉 運動。再配合超音波偵測裝置105，偵測晶圓週邊的裂縫。 第四圖顯示一具有上述之偵測破損與裂縫功能之整合 式平台其中包含顯示器402a、運算器402b、傳送裝置4〇4、 定位及檢測裝置406、避震底盤408、潔淨裝置41〇、支援 模組41 2，與觀察至41 4等分件。待檢測之晶圓首先安置 於晶圓儲存室418中，再由傳送裝置4〇4夾取待檢測的晶 圓’其送入定位及檢測装置406中。一般而言，傳送裝置 404係為一個具有χ-γ-ζ三方向自由度之機械手臂。定位 及檢測裝置406，將待檢測之晶圓安置於正確之受測位 置。再利用多組光感應偵測元件，以檢驗晶圓週邊是否產 本紙張尺度適用中國國家標準（CNS ) A4規格（210x297公| ) 請 先· 閱 讀 背 冬 意 事 項 再 填 寫 本 頁 螻 訂 # 經濟部中央標準局員工消費合作社印製 495896 A7 B7 五、發明説明（ ） ~" 生破f。同時並利用超音波偵測裝豊，偵測該待檢測晶圓 週邊是否有裂縫產生。至於偵測破損與裂縫的方法，與上 述之内容相同，故不在此贅述。當晶圓由機器檢驗完成後， 再送至透明之觀察室414内，以肉對晶圓416之缺陷做最 '灸的確w。顯示器4 〇 2 a，供應了檢視平台即時顯示偵測結 果之功能，而運算器402b，則提供整個系統必要的運算與 I乍報表的此力。此外，由於晶圓必須在極乾淨的環境下 製造，因此利用潔淨裝置41 0提供系統内部乾淨的操作環 3兄。而分離於系統主結構外之支援模組41 2 (例如，壓縮 機、真空幫浦），則在對系統主體干擾最少的情況下，提 2系統運作必要的真空度。由於偵測晶圓缺陷所使用的光 π器材很容易受到外界環境的干擾，故於整個檢測裝置的 底。卩女裝避震底盤408。該避震底盤408，可為氣塾或是由 彈性元件所構成的避震器，以達到隔絕外部環境干擾的目 的。而上述所有元件可整合成如第四圖所示之偵測裝置（工 作平台），再配合滾輪420，即可提供機動而強大之晶圓 缺陷偵測功能。 第五圖為上述之整合式晶圓缺陷檢測裝置之俯視圖。 由圖中可以清楚了解，待檢測晶圓於檢測裝置内傳輸情 形。待測晶圓51 6安放於晶圓儲存室4丨8中，透過傳送裝 置404之機械手臂512夾取待測晶圓516，並將其送入定 位及檢測裝置406中。定位及檢測裝置4〇6含有超音波裂 縫檢測裝置508，與光感應破損偵測裝置51 〇，並依上述之 檢測模式判斷晶圓週邊是否發生裂縫或破損。 9 本纸張尺度適用中國國家標準（CNS ) Α4規格（21〇X 297公董） ---------9,------1Τ------^9. (請先•閲讀背νέ.之注意事項再填寫本可X) 495896 經濟部中央標準局員工消費合作社印製 A7 ______B7五、發明説明（） 第六圖表示一種偵測半導體蟲圓破損及裂縫之方 法。檢測的流程自步驟6 0 0開始，接著於步驟6 0 2處設定 待檢測晶圓傳送至定位與檢測模組之程序。於步驟6 〇 4處 輸入該批受測晶圓之批號，並選擇受測之晶圓。隨後，傳 輸受測晶圓直正確的受測位置，如步驟6 0 6所示，再依序 定位晶圓，如步驟41 0所示。然後利用上述之半導體晶圓 .破損偵測模式（參見第二圖）於步驟610處啟動偵測，若 4貞測出破損現象’則標記出破損之晶圓，如步驟61 2所示， 再繼續步驟614。若偵測出無破損現象，則直接進行步驟 61 4。然後’於步驟61 4處偵測晶圓是否有裂縫發生，若有， 則標記出有裂縫之晶圓，如步驟616所示，再繼續步驟 6 1 8。若無，則直接進行步驟61 8。接著移出待檢測晶圓， 並製作上述偵測結果之報表，如步驟6 1 8所示。最後於步 驟620處以目視檢查晶圓的破損及缺陷情形，當破損一經 確定則將該有缺陷之晶圓移除，如步驟622所示，並結束 整個偵測流程，如步驟624所示。 本發明以一^較佳實施例說明如上，僅用於藉以幫助了 解本發明之實施’非用以限定本發明之精神，而熟悉此領 域技藝者於領悟本發明之精神後，在不脫離本發明之精神 範圍内，當可做些許更動潤飾及等同之變化替換，其專利 保護範圍當視後附之專利申請範圍及其等同領域而定。 . 遂！ (請先郾讀背焉之注意事項再填寫本頁} -訂· -^9·. 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）V. Description of the invention () The infrared light emitted by the line emission source 106 cannot pass through the wafer and be transmitted to the infrared light receiver 108. Therefore, under the second damage mode, the traditional external light detection device will lose its effectiveness. In addition, the traditional infrared light detection device can only be effective when the wafer diameter is reduced. Therefore, when cracks occur in the peripheral area of the wafer, even the appearance of the wafer will not change because these cracks will not cause a reduction in the diameter of the circle. Therefore, in the case of cracks around the wafer, the traditional infrared photocathode device will also lose its effectiveness. In summary, how to propose a device or method that can overcome the dead angle detection has become an increasingly important problem in this field. Furthermore, if a variety of debt detection instruments with different detection modes can be integrated on a high-mobility and powerful working platform, it will provide greater benefits for the improvement of semiconductor processes in this field. 5-3 Purpose and summary of the invention: Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, the purpose of the present invention is to provide a method for detecting various forms of damage in the peripheral area of semiconductor wafers and cracks located in the peripheral area.测 装置。 Testing device. And through the appropriate structure, the above two detection modes are integrated into a working platform. Based on this work platform, a set of wafer defect inspection methods that consider both efficiency and accuracy are designed. The invention discloses a device and method for detecting breakage and crack of a semiconductor wafer. The device used to detect damage is installed by installing multiple sets of light-sensing detection elements at different angles near the periphery of the wafer, and it can be used to absorb the paper. The standard is China National Standard (CNS) A4 (210X297 mm). 495896 A7 B7 V. Description of the invention (Japanese-Japanese-Japanese-style red turning support device to provide passenger seven ^ branches for detection of a variety of different damage modes. As for the crack detection device, the J-blade uses an ultrasonic detection device and cooperates with The above-mentioned rotating support device is used to detect whether cracks are generated around the wafer to be tested. The wafer breakage detection device and the wafer crack detection device of Russia [can be used with grave transport and reverse processing to provide calculation and report production capabilities. And other devices that allow inspection of the wafer by the naked eye, and other integration points. ^ ^ Τ σ 戍 The previous work platform. Finally, according to the integrated work level of the present invention, and ^ ^ F 卞 口, k Provide a set of methods for inspecting wafer defects. Simplified diagram (please read the precautions on the back before filling out this page) The edge of the damaged area in the picture below. Detective equipment is used, and the detection system is optically transmitted outside the border area of the red-damaged area. The circle chart shows that the detection equipment is used, and the detection should detect that the light is beyond the seams. Bian Zhouyuanjing ο The topographic survey surveillance is best used, the central installation of the clear detection and detection of the local wave is the third sound of the sound map A, and the central installation of the detection and detection of the local wave is the sound of the third sound of the picture B third Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, the fifth and sixth chapter, the center is installed with a super-slit cracked edge circle, which is used for damage detection. The survey is based on side breaks and seams. The cracked edge circle. The circle diagram shows the detection structure to detect the cracked edge and the cracked edge. The broken 'weekly diagram and the circle sense cracked structure shows the cracked edge detection to detect the circle with the top crystal, The test copy of the middle-mounted and bright-made test book is damaged-the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 495896 A7 B7 V. Description of the invention (Method 5-5 Detailed description of the invention: This The invention will be described with an example of a plurality of groups of light-sensing detection elements. How to detect the damage of the peripheral area of the wafer. The implementation of the cracks in the wafer area of the wafer will be achieved through an embodiment of the ultrasonic detection device and the method invented by Q. Then, through a single detection device, 4 points are proposed. ， Integrated detection device. Finally, according to the integrated μ evaluation of the present invention. ， Detection $ # Propose a detection method 'to explain how to use the present invention to perform, summer and crack detection. ≪ Know the description in this spirit, please read · The second picture printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs indicates that the semiconductor wafer damage detection device in the present invention is not shown in the drawing, which includes the wafer 202 rotating around the central axis 204, There are two sets of light-sensing pick-and-read elements (this embodiment uses two sets of light-sensing detection elements to explain the invention, and the number of this light-sensing detection element can also be increased according to the needs of the user). Each group of light-sensing detection elements includes a light-wave transmitting device and a light-wave receiving device. The light-wave transmitting device can emit a light beam (for example, infrared light, laser light, etc.) for detecting a wafer, and the light-wave receiving device is used for Receive the light beam emitted by the light wave emitting device and use it to determine whether the periphery of the wafer is damaged. As shown in the second figure, the first light wave transmitting device 210 and the first light wave receiving device 21 2 constitute a first light sensing detection element, and the second light wave transmitting device 206 and the second light wave receiving device 208 constitute a second light Inductive detection element. When the detection starts, with a rotating device (the same as the third B. Figure 1 04) The paper size applies the Chinese National Standard (CNS) A4 specification (210X29 * 7 mm) 495896 A7 B7 V. Description of the invention The supporting structure under the wafer 202 (see Fig. 10b of Fig. 3b), and the supporting structure can suck the wafer through vacuum or static electricity to make the wafer 202 rotate around the central axis 204. It is mounted on the reused The first photo-sensing detection element and the second photo-sensing detection element at the wafer periphery and at different angles of incidence to the wafer surface, detect whether damage has occurred. When the damage caused by the wafer periphery changes the diameter of the wafer (Broken of the first type), the light beams emitted by the first light wave emitting device 210 and the second light wave emitting device 206 can pass freely through the surface of the wafer 202 to be the first light wave receiving device 212 and the second light wave connecting device. Received by 208. When any light wave receiving device receives the light beam transmitted by the light wave splitting, it means that the peripheral area of the wafer 202 has been damaged. If the damage around the wafer at this time and the Unchanged wafer (The second type of damage), which means that the broken surface will intersect with the wafer surface diagonally, as shown in the second figure. # [When the light beam emitted by the light wave device 21G is blocked by the crystal sm, the second The light beam emitted by the optical device 206 will be placed in a non-radiating-^ ^. I " stand, and can directly shoot a light wave into the second light wave receiving device 208. Similarly (please read the precautions on the back before filling in (This page) -Φ The printed device of the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs received the light transmitted by the light wave transmitting device, and the surrounding area of Daiyuan 202 was damaged. Therefore, through multiple groups-the light of the location The induction detection element can successfully detect the damage situation of $ 1 when it is placed in different methods. As for the light induction detection ▲ number of know-how; 5 ^ position can be added according to the needs of users Adjustment. The third A picture of the original is the semiconductor wafer crack detection device, the transmission device and the support structure assembly! 07 (See the top view for the detailed composition, including the wafer 101, and the ultrasonic detection device 105. Third B)) At the beginning of the year, the paper was rounded from 10 to 10 secrets (21GX297 ^ j-^^ 896 from the Standard for Financially Friendly Housekeeping Standards (CNS). Driven by the support structure assembly 107, the ultrasonic detection device 105 is placed at a position below the periphery of the wafer. The ultrasonic detection device 105 is used to emit an ultrasonic wave on the surface of the wafer 101, and Collect the ultrasonic signals reflected by the surface of i-circle 101. Then convert the collected signals into an image visible to the naked eye, and determine whether cracks have occurred based on the imaging image of the reflected ultrasonic waves. When there are no defects around the wafer At this time, the imaging of the reflected ultrasound will be very uniform. If there is a crack in the peripheral area of the wafer 101, the imaging of the reflected ultrasound will generate noise and become irregular. Therefore, it can be determined that cracks have occurred in the peripheral area of the wafer 101. The third figure B is a side view of the semiconductor wafer crack detection device, in which the supporting device 102, the transmission belt 106, and the rotating device 104 hibiscus ancient # structure assembly m (see the third a). The supporting device 102 == or electrostatically adsorbs the wafer 101, and the rotating device 104 (for example, a motor) passes the transmission belt 106 to cause the supporting device 102 and the wafer 101 to rotate. Together with the ultrasonic detection device 105, cracks around the wafer are detected. The fourth figure shows an integrated platform with the above functions for detecting damage and cracks, which includes a display 402a, a computing unit 402b, a transmission device 404, a positioning and detection device 406, a suspension chassis 408, a cleaning device 41, and support. Module 41 2, and observations to 41 4 are equally divided. The wafer to be inspected is first placed in a wafer storage chamber 418, and then the wafer to be inspected is picked up by the transfer device 404 and sent to the positioning and inspection device 406. Generally speaking, the conveying device 404 is a mechanical arm with three degrees of freedom in χ-γ-ζ directions. The positioning and inspection device 406 places the wafer to be inspected in the correct position to be inspected. Then use multiple sets of light-sensing detection elements to check whether the wafer is produced around the paper. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210x297) | Please read the winter notes before filling out this page. 蝼 定 # Economy Printed by the Ministry of Central Standards Bureau's Consumer Cooperatives 495896 A7 B7 V. Description of the Invention () ~ " At the same time, ultrasonic detection equipment is used to detect whether cracks occur around the wafer to be detected. As for the method of detecting damage and cracks, the content is the same as above, so it will not be repeated here. After the wafer is inspected by the machine, it is sent to the transparent observation room 414, and the defects of the wafer 416 are treated with meat. The display 4 2a provides the function of displaying the detection results in real time on the viewing platform, and the computing unit 402b provides the necessary calculations and the power of the report. In addition, since the wafer must be manufactured in an extremely clean environment, a clean device 4 10 is used to provide a clean operating ring inside the system. The support module 41 2 (for example, compressor, vacuum pump), which is separated from the main structure of the system, improves the vacuum degree necessary for the operation of the system with minimal interference to the main body of the system. Since the optical π equipment used to detect wafer defects is easily susceptible to interference from the external environment, it is at the bottom of the entire inspection device.卩 Women's suspension chassis 408. The shock-absorbing chassis 408 may be a shock absorber or a shock absorber composed of an elastic element, so as to achieve the purpose of shielding from external environmental interference. And all the above components can be integrated into the inspection device (working platform) as shown in the fourth figure, and then combined with the roller 420, it can provide a mobile and powerful wafer defect detection function. The fifth figure is a top view of the integrated wafer defect detection device. It can be clearly understood from the figure that the wafer to be inspected is transferred in the inspection device. The wafer to be tested 516 is placed in the wafer storage chamber 4 丨 8, and the wafer 516 to be tested is gripped by the robot arm 512 of the transfer device 404, and sent to the positioning and inspection device 406. The positioning and detection device 406 includes an ultrasonic crack detection device 508, and a light-induced damage detection device 51, and judges whether cracks or breaks occur around the wafer according to the above detection mode. 9 This paper size applies to China National Standard (CNS) Α4 specification (21〇X 297 public directors) --------- 9, ------ 1T ------ ^ 9. ( Please read the notes on the back and fill in this first. X) 495896 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ______B7 V. Description of the invention () The sixth figure shows a method for detecting the damage and cracks of the semiconductor worm circle . The inspection process starts at step 600, and then sets the procedure of the wafer to be inspected to the positioning and inspection module at step 602. Enter the lot number of the batch of wafers to be tested at step 64 and select the wafer to be tested. Then, transfer the wafer to be tested to the correct location, as shown in step 606, and then position the wafers in sequence, as shown in step 410. Then use the above-mentioned semiconductor wafer. Damage detection mode (see the second figure) to start detection at step 610. If the damage phenomenon is detected, then mark the damaged wafer, as shown in step 61 2 and then Proceed to step 614. If no damage is detected, go to step 61 4 directly. Then, it is detected at step 61 4 whether cracks occur in the wafer. If so, mark the wafers with cracks, as shown in step 616, and then continue with step 6 1 8. If not, go to step 61 8 directly. Then remove the wafer to be inspected and make a report of the above inspection results, as shown in step 6-18. Finally, the wafer is visually inspected for damage and defects at step 620. When the damage is determined, the defective wafer is removed, as shown in step 622, and the entire inspection process is ended, as shown in step 624. The present invention is described above with a preferred embodiment, and is only used to help understand the implementation of the present invention. It is not intended to limit the spirit of the present invention, and those skilled in the art will appreciate the spirit of the present invention without departing from the present invention. Within the spirit of the invention, when some modifications and equivalent changes can be made, the scope of patent protection depends on the scope of the attached patent application and its equivalent fields. . Then! (Please read the precautions before completing this page before filling in this page} -Order ·-^ 9 ·. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm)