TW486741B - Aligner and method of exposure - Google Patents

Aligner and method of exposure Download PDF

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Publication number
TW486741B
TW486741B TW090107655A TW90107655A TW486741B TW 486741 B TW486741 B TW 486741B TW 090107655 A TW090107655 A TW 090107655A TW 90107655 A TW90107655 A TW 90107655A TW 486741 B TW486741 B TW 486741B
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TW
Taiwan
Prior art keywords
exposure
aforementioned
area
light
pattern
Prior art date
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TW090107655A
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Chinese (zh)
Inventor
Motoo Koyama
Masanori Kato
Yasuhito Kubota
Akihito Shirato
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Nikon Corp
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Priority claimed from JP2000114680A external-priority patent/JP2001297975A/en
Application filed by Nikon Corp filed Critical Nikon Corp
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Publication of TW486741B publication Critical patent/TW486741B/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

To prevent device quality from degrading even though part of the substrate being repetitively exposed and also, to form high-precision patterns in overlapping regions and in no overlapping regions. Multiple light beams from an optical integrator (14), which forms plural images of a light source, irradiate a photo mask. Part of the photo mask pattern is transferred onto a substrate by repetitive exposure. The aligner comprises an amount-of-exposure adjusting component (PF), which is disposed in a conjugation plane formed by the optical integrator and the photo mask and adjusts amount of exposure for the repetitive exposure region, and relocation components (51, 52), which moves amount-of-exposure adjusting component (PF) in the conjugation plane.

Description

486741 A7 _____B7____ 五、發明說明（I ) · / [發明之詳細說明] [發明所屬之技術領域] 本發明係關於一種將形成於光罩之圖案曝光至基板之 曝光裝置及曝光方法，尤其是關於一種以光學積分器來形 成複數之光源像的曝光裝置及曝光方法。又，本發明係關 於以微影技術來製造半導體集積電路、液晶顯示元件、電 漿顯示面板等之顯示元件、薄膜磁頭、其他之微元件、或 是光罩等之際所使用之曝光裝置及曝光方法，更詳細地說 ，係於工件上部分重合單位光罩圖案進行轉寫以形成大面 積之圖案的曝光裝置及方法，也就是關於進行畫面合成之 曝光裝置及方法。 [習知技術] 近年來，作爲電腦、電視等之顯示元件，多使用可薄 型化之液晶顯示面板。此種液晶顯示面板係以光微影之做 法將俯視呈矩形狀之感光基板、例如於玻璃基板上之透明 薄膜電極圖案化成既定之形狀來製造者。又，作爲該光微 影之裝置，係使用一曝光裝置，其讓形成於光罩（光柵）上 之圖案經由投影光學系統而曝光於玻璃基板上之光阻層。 上述之液晶顯示元件，係基於畫面之觀看難易度而逐 漸大型化。符合此要求之曝光裝置，例如日本專利特開平 7-57986號所揭示般，構想出一種掃描型曝光裝置，其將 複數之投影光學系統(將光罩之圖案以正立像投影於基板上 )加以組合，並使得光罩與玻璃基板沿既定方向同步移動， 而相對於投影光學系統進行掃插，以將在同步移動方向之 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) ---I----訂-------- ' 486741 A7 ______B7_ 五、發明說明（y ) / 直交方向具有大的曝光區域、亦即形成於光罩之 LCD(Liquid Crystal Display)等之圖案依序轉寫到基板上之 曝光區域。 此時，作爲即使投影區域大也不致使得裝置大型化、 且可得到良好的成像特性的投影光學系統，可使用讓複數 之投影光學系統如圖22所示般配置成爲：使得相鄰之投影 區域PA彼此在掃描方向(X方向)做既定量移位、且相鄰之 投影區域PA之端部彼此如兩點鏈線所示般在與掃描方向 直交的方向(Y方向）上做部分的重疊。 此時，各投影光學系統之視野光闌係設定成爲例如， 於長方形部T之端部配置著三角形之接合部J所成的梯形 形狀，使得掃描方向之視野光闌的開口寬度合計始終維持 相等。是以，上述之掃描型曝光裝置中，相鄰之投影光學 系統的接合部J在玻璃基板P上重覆地受到曝光，使得投 ~ 影光學系統之光學像差與曝光照度得以平滑地變化，此爲 優點所在。 _ 又，就以往以微影技術來製造光罩等之際所使用之曝 光裝置及方法，爲了解決成爲曝光對象之感光性基板(工件 )之大型化，所採用之做法，係將感光性基板之曝光區域分 割成複數之單位曝光區域，使得對於各單位曝光區域之曝 光經複數次之重覆而合成出具有最終所希望之大面積的圖 案，也就是畫面合成之做法。進行畫面合成之情況，起因 於圖案投影用之光罩的描繪誤差、投影光學系統之畸變、 用以定位感光性基板之平台的定位誤差等，於各單位曝光 4 (請先閱讀背面之注意事項再填寫本頁) --------訂·-------1 . 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ____ B7_______ 五、發明說明（h ) /區域之交界位置容易發生圖案之裂痕。是以，琢了防止圖 案之裂痕，乃藉由讓各單位曝光區域之交界僅做微少量的 重合、換言之讓各單位曝光區域做部分的重合，來進行畫 面合成甩之曝光。 若讓各單位曝光區域做部分的重合，由於重合之曝光 區域（以下稱爲「重複曝光區域」）之曝光光量會成爲重複 曝光區域以外之曝光區域（以下稱爲「非重複曝光區域」） 的2倍(在4重複曝光區域則爲4倍），所以以往的做法係 將重複曝光區域與非重複曝光區域之曝光量控制成爲一定 〇 [發明所欲解決之課題] 惟，隨著感光性材料之感光劑之特性與圖案之性質形 狀的不同，即使感光量一定，重複曝光區域之圖案像的輪 廓（光阻輪廓）與非重複曝光區域之圖案像的輪廓仍會變化 ，而有圖案之線寬的均一性、間距的均一性降低的問題。 又，於上述習知·之曝光裝置與曝光方法中，存在著以 下的問題。 在以往，不管是以長方形部τ來曝光之情形、或是以 接合部J來曝光之情形，只要總曝光面積相同’則如圖 37(a)所示般，以長方形部ΤΙ、T2所曝光之非重複區域的 曝光量與以接合部J1、J2所曝光之重複區域的總曝光量會 如圖37(b)所示般成爲相同，是以對玻璃基板Ρ所供給之照 度功率（曝光能量）也相同，於是經曝光之圖案的線寬等的 輪廓也傾向於相同。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂·--------. (請先閱讀背面之注意事項再填寫本頁) 486741 · A7 ______Β7____ 五、發明說明（$ ) - 惟，雖非全部的情形，但被施以光阻處理之一部分的 玻璃基板P中，如圖38所示，以長方形部(非重複區域)T 所曝光之線/間距圖案與以接合部（重複區域)J所曝光之線/ 間距圖案會造成線寬A、Β之間或高度C、D之間出現差 異，而如兩點鏈線所示般，成爲線頂部之邊緣消失、底部 呈裙襬般變寬之梯形的輪廓，而發生邊緣之傾斜不同等， 隨條件不同所發生之截面形狀（圖案像輪廓之傾向）不同的 現象(參照圖37(c))。 此現象被認爲是由於在接合部〗所重複曝光之玻璃基 板P上之點自第一列之投影區域往第二列之投影區域移動 之間存在著時間差、或是由於塗佈於玻璃基板P之光阻劑 特性而造成光阻劑相對於各部分所供給之照度功率在化學 反應量方面出現差異所導致者。實際上，多有供給至重複 曝光部分之照度功率所造成之化學反應量較非重複部分來 得大的現象。是以，一旦以長方形部T與接合部J所曝光 之圖案出現了線寬與高度、間距的差異，則如圖39所示般 ，於玻璃基板P上沿著掃描方向會出現條斑，而有所製造 之液晶顯示元件之品質顯著降低之問題。 此問題並不限於使用複數之投影光學系統的情況，即 使是讓：具有單一之投影區域的投影光學系統’讓光罩與 玻璃基板同步移動進行第1掃描曝光之後’讓光罩與玻璃 基板在直交於同步移動的方向上步進移動相當於投影區域 之長度的距離，再度讓光罩與玻璃基板同步移動進行第2 掃描曝光之製程進行一次或反覆數次’使得複數之分割圖 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂·-------. . (請先閱讀背面之注意事項再填寫本頁) 486741 A7 _____B7______ 五、發明說明（< ) 案彼此在部分重複的狀態下進行接合的情況，也同樣有發 生上述條斑之虞。 本發明係考量以上各點所爲者’其目的在於提供一種 曝光裝置與曝光方法，即使在基板上一部份重複曝光也可 防止元件之品質下降。 又，本發明之目的係可在重複區域以及非重複區域形 成高精度之圖案。 [用以解決課題之手段] 爲了達成上述目的之本發明係採用對應於顯示實施形 態之圖1到圖22之以下的構成。 本發明之曝光裝置（1)，係藉由自形成有複數之光源像 的光學積分器（14)所射出之曝光用光來照明光罩(M)，使得 光罩(M)之圖案的一部分在基板(P)上重複曝光；其特徵在 於，具備：照度調節裝置(PF)，係配置於光學積分器（14)之 與光罩(M)的共軛面，用以調節重複曝光部分⑺之照度； 以及，移動裝置(51、52)，係讓照度調節裝置(PF)移動於共 輒面內。 又，本發明之曝光方法，係藉由自形成有複數之光源 像的光學積分器（14)所射出之曝光用光來照明光罩(M)，使 得光罩(M)之圖案的一部分在基板(P)上重複曝光；其特徵 在於，包含：於光學積分器（14)之與光罩(M)的共軛面，配 置用以調節重複曝光部分⑺之照度的照度調節裝置(PF)之 步驟；以及’讓照度調節裝置(PF)移動於共軛面內之步驟 〇 7 本紙張尺度適用中國國家標準（CNS)A4規格（細X 297公爱） ---- Ψ -----------—-—訂---------· (請先閱讀背面之注意事項再填寫本頁) 486741 A7 ___B7___________ 五、發明說明（U ) ‘ 從而，就本發明之曝光裝置與曝光方法而言，藉由讓 照度調節裝置(PF)移動於共軛面內，則可調節基板(P)上之 重複曝光部分⑺的照度。是以，當在重複曝光部分⑺之曝 光所造成之光阻劑的化學反應量較非重複曝光部分(T)來得 大的情形，藉由降低在重複曝光部分⑺的照度，乃可使在 重複曝光部分⑺之光阻劑的化學反應量與在非重複曝光部 分(T)的光阻劑之化學反應量相同，於是在各部分之圖案的 形狀也會相同。 再者，爲了達成上述目的，有關本發明之第1態樣的 曝光方法，爲了在工件上對周邊部呈部分重疊之複數的區 域分別轉寫圖案，乃透過可緩緩地減少在前述週邊部之曝 光量的設定機構，對前述各區域以能束來掃描曝光；其中 ，前述呈部分重疊之區域的曝光量、與該重疊區域爲不同 的區域之曝光量可獨自設定，且可進行連續的調整。 又，爲了達成上述目的，有關本發明之第2態樣的曝 光方法，爲了在工件士對周邊部呈部分重疊之複數的區域 分別轉寫圖案，乃透過可緩緩地減少在前述週邊部之曝光 量的設定機構，對前述各區域以能束來掃描曝光；其中， 前述複數之區域，係包含於前述工件上實質地同時形成之 第1區域與第2區域，且前述第1與第2區域重疊著之重 複曝光區域的曝光量、與該重複曝光區域爲不同區域的曝 光量係獨自設定。 又，爲了達述目的，有關本發明之第3態樣的曝 光方法，爲了在工件上對周邊部呈部分重疊之複數的區域 8 (請先閱讀背面之注意事項再填寫本頁) --------訂--------- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ___JB7__ 五、發明說明（]) 分別轉寫圖案，乃透過可緩緩地減少在前述週邊部之曝光 量的設定機構，對前述各區域以能束來掃描曝光；其中， 前述工件係受到來自實像或虛像所構成之複數的光源像的 能束之重疊照射，前述設定機構係配置在：對應於來自前 述複數之光源像的複數之能束的光路當中之至少兩光路的 光路中、與前述工件呈光學共軛的位置處。 有關本發明之第4態樣的曝光方法，係於第3態樣之 曝光方法中，將前述部分重疊之區域之曝光量、與該重疊 區域爲不同區域的曝光量獨立設定。 有關本發明之第5態樣的曝光方法，係於第3或第4 態樣之曝光方法中，可將前述部分重疊之區域的曝光量來 連續設定。 有關本發明之第6態樣的曝光方法，係於第1、第2、 第3、第4或第5態樣之曝光方法中，前述複數之區域， 係包含於前述工件上實質地同時形成之第1區域與第2區 域，且前述設定機構係用以設定前述第1與第2區域重疊 著之重複曝光區域的曝光量。 有關本發明之第7態樣的曝光方法，係於第1〜第5之 任一態樣之曝光方法中，前述設定機構係設定前述部分重 疊之區域的前述曝光量以控制前述部分重疊之區域之前述 轉寫圖案的輪廓。 有關本發明之第8態樣的曝光方法，係於第7態樣之 曝光方法中，前述設定機構係以讓前述部分重疊之區域的 前述輪廓、與前述部分重疊之區域爲不同區域的輪廓成爲 9 -------------------訂·-------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ___B7 五、發明說明（纟） 大致同一輪廓的方式來設定前述曝光量。 有關本發明之第9態樣的曝光方法，係於第7或第8 態樣之曝光方法中，前述圖案的輪廓係包含前述圖案的線 寬。 有關本發明之第1〇態樣的曝光方法，係於第1〜第9 之任一態樣之曝光方法中，前述複數之區域係包含在前述 工件上實質地同時形成之第1區域、第2區域、以及第3 區域，前述設定機構係將對於前述第1與第2區域呈重疊 之第1重複曝光區域的曝光量、對於前述第2與第3區域 呈重疊之第2重複曝光區域的曝光量彼此獨立地來設定。 又，爲了達成上述目的，有關本發明之第11態樣的曝 光裝置，爲了在工件上對周邊部呈部分重疊之複數的區域 分別轉寫圖案，乃透過可緩緩地減少在前述週邊部之曝光 量的設定機構，對前述各區域以能束來掃描曝光；其中， 則述設疋機構可將則述部分重疊之區域的曝光量、與該重 疊之區域爲不同的區域之曝光量獨自設定，且可進行連續 的調整。 又，爲了達成上述目的，有關本發明之第12態樣的曝 光裝置，爲了在工件上對周邊部呈部分重疊之複數的區域 分別轉寫圖案，·乃透過可緩緩地減少在前述週邊部之曝光 量的設定機構，對前述各區域以能束來掃描曝光；其中， 前述複數之區域，係包含於前述工件上實質地同時形成之 第1區域與第2區域，前述設定機構可將前述第1與第2 區域重疊著之重複曝光區域的曝光量、與該重複曝光區域 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂--------- 486741 A7 五、發明說明（彳） / 爲不同區域的曝光量加以獨自設定。 又，爲了達成上述目的，有關本發明之第13態樣的曝 光裝置，爲了在工件上對周邊部呈部分重疊之複數的區域 分別轉寫圖案，乃透過可緩緩地減少在前述週邊部之曝光 量的設定機構，對前述各區域以能束來掃描曝光；其中， 係具備用以形成由實像或虛像所構成之複數的光源像的光 學積分器，前述設定機構係配置在：來自前述複數之光源 像的複數之能束的光路當中之至少兩光路中、與前述工件 呈光學共軛的位置處。 有關本發明之第I4態樣的曝光裝置，係於第13態樣 之曝光裝置中’則述設定機構係將則述部分重疊之區域之 曝光量、與該重疊區域爲不同區域的曝光量獨立設定。 有關本發明之第15態樣的曝光裝置，係於第13或第 14態樣之曝光裝置中，前述設定機構可將前述部分重疊之 區域的曝光量來連續設定。 有關本發明之第16態樣的曝光裝置，係於第^、13 、14或第15態樣之曝光裝置中，前述複數之區域，係包 含於則述工件上實質地同時形成之第1區域與第2區域， 且則述設定機構係用以設定則述第1與第2區域重疊著:之^ 疊合(overlap)區域的曝光量。 有關本發明之第17態樣的曝光裝置，係於第u〜第 I5之任一態樣之曝光裝置中’前述設定機構係設定前述部 分重疊之區域的前述曝光量以控制前述部分重疊之區纟戎& 前述轉寫圖案的輪廓。 11 (請先閱讀背面之注意事項再填寫本頁)486741 A7 _____B7____ V. Description of the invention (I) · / [Detailed description of the invention] [Technical field to which the invention belongs] The present invention relates to an exposure device and an exposure method for exposing a pattern formed on a photomask to a substrate, and more particularly, An exposure device and an exposure method for forming a plurality of light source images with an optical integrator. In addition, the present invention relates to an exposure device and the like used in the manufacture of display elements such as semiconductor integrated circuits, liquid crystal display elements, plasma display panels, thin-film magnetic heads, other micro-elements, or photomasks by lithography technology. The exposure method is, in more detail, an exposure device and method for partially overlapping a unit mask pattern on a workpiece to form a large-area pattern, that is, an exposure device and method for performing screen composition. [Known Technology] In recent years, thin display liquid crystal display panels have been used as display elements for computers and televisions. Such a liquid crystal display panel is manufactured by patterning a photosensitive substrate having a rectangular shape in plan view, such as a transparent thin-film electrode on a glass substrate, into a predetermined shape by a photolithography method. In addition, as the photolithography device, an exposure device is used which exposes a pattern formed on a photomask (grating) to a photoresist layer on a glass substrate via a projection optical system. The above-mentioned liquid crystal display elements are gradually enlarged based on the difficulty of viewing the screen. An exposure device that meets this requirement, such as disclosed in Japanese Patent Laid-Open No. 7-57986, conceives a scanning-type exposure device that applies a plurality of projection optical systems (the pattern of a photomask is projected on a substrate as an erect image). And make the photomask and the glass substrate move synchronously in a predetermined direction, and scan and insert relative to the projection optical system, so that the three paper sizes in the synchronous moving direction apply the Chinese National Standard (CNS) A4 specification (210 x 297 mm) Li) (Please read the notes on the back before filling this page) --- I ---- Order -------- '486741 A7 ______B7_ V. Description of the invention (y) / Large exposure in orthogonal direction The area, that is, the pattern formed on the LCD (Liquid Crystal Display) of the photomask is sequentially transferred to the exposed area on the substrate. At this time, as a projection optical system that does not increase the size of the device even if the projection area is large, and can obtain good imaging characteristics, a plurality of projection optical systems can be configured as shown in FIG. 22 so that adjacent projection areas are arranged The PAs are shifted in the scanning direction (X direction) by a fixed amount, and the ends of adjacent projection areas PA are overlapped with each other in a direction orthogonal to the scanning direction (Y direction) as shown by the two-point chain line. . At this time, the field diaphragm of each projection optical system is set to, for example, a trapezoidal shape formed by arranging a triangular joint portion J at the end of the rectangular portion T, so that the total opening width of the field diaphragm in the scanning direction is always kept equal. . Therefore, in the above-mentioned scanning exposure device, the joint portion J of the adjacent projection optical system is repeatedly exposed on the glass substrate P, so that the optical aberration and exposure illuminance of the projection optical system can be smoothly changed. This is the advantage. _ In addition, the exposure device and method used in the past to manufacture photomasks by lithography technology, in order to solve the problem of increasing the size of the photosensitive substrate (workpiece) to be exposed, the method used is to increase the sensitivity of the photosensitive substrate The exposure area is divided into a plurality of unit exposure areas, so that the exposure of each unit exposure area is repeated several times to synthesize a pattern with the finally desired large area, which is the method of screen synthesis. In the case of screen composition, it is caused by the drawing error of the mask used for pattern projection, the distortion of the projection optical system, the positioning error of the platform used to position the photosensitive substrate, etc., and it is exposed in each unit 4 (Please read the precautions on the back first (Fill in this page again.) -------- Order · --------- 1. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 486741 A7 ____ B7_______ V. Invention It shows that the pattern of cracks easily occurs at the boundary of (h) / region. Therefore, in order to prevent cracks in the pattern, the exposure of the composite image is performed by making the boundary of the exposure areas of each unit overlap only a small amount, in other words, the overlap of the exposure areas of each unit. If the unit exposure areas are partially overlapped, the exposure light amount of the overlapped exposure areas (hereinafter referred to as "repeated exposure areas") will become the exposure area other than the repeatedly exposed areas (hereinafter referred to as "non-repeated exposure areas"). 2 times (4 times in 4 repeated exposure areas), so the conventional method is to control the exposure amount of the repeated exposure area and the non-repeated exposure area to be constant. [Problems to be solved by the invention] However, with the photosensitive material The characteristics of the photosensitizer are different from the nature and shape of the pattern. Even if the amount of light is constant, the contour of the pattern image (photoresist contour) in the repeatedly exposed area and the contour of the pattern image in the non-repeated exposure area will still change, and there is a pattern line. Wide uniformity and pitch uniformity are reduced. The conventional exposure apparatus and exposure method have the following problems. In the past, regardless of the case where the rectangular portion τ is exposed or the joint portion J is exposed, as long as the total exposure area is the same, as shown in FIG. 37 (a), the rectangular portions T1 and T2 are exposed. The exposure amount of the non-repeated area is the same as the total exposure amount of the repeated area exposed by the joints J1 and J2, as shown in FIG. 37 (b), and is based on the illuminance power (exposure energy) supplied to the glass substrate P. ) Is the same, so the contours of the line width and the like of the exposed pattern tend to be the same. 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------------- Order · -------- (Please read the precautions on the back before filling this page) 486741 · A7 ______ Β7 ____ V. Description of the Invention ($)-However, although not all the cases, the glass substrate P which is part of the photoresist treatment is applied, as shown in Figure 38 As shown, the line / space pattern exposed by the rectangular portion (non-repeated area) T and the line / space pattern exposed by the junction (repeated area) J will result in a line width A or B or a height C or D. There is a difference between them, and as shown by the two-point chain line, the edge of the line disappears, the bottom becomes a trapezoidal outline that widens like a skirt, and the slope of the edge is different, and the shape of the cross section that occurs with different conditions ( The tendency of the pattern like the contour) is different (see Fig. 37 (c)). This phenomenon is considered to be due to the time difference between the point on the glass substrate P repeatedly exposed at the junction from the projection area in the first row to the projection area in the second row, or because it is coated on the glass substrate Due to the characteristics of the photoresist of P, it is caused by the difference in the amount of chemical reaction between the photoresist and the illuminance power supplied by each part. In fact, there are many phenomena in which the amount of chemical reaction caused by the illuminance power supplied to the repeatedly exposed portion is larger than that of the non-repeated portion. Therefore, once the pattern exposed by the rectangular portion T and the joint portion J has a difference in line width, height, and pitch, as shown in FIG. 39, streaks appear along the scanning direction on the glass substrate P, and There is a problem that the quality of the manufactured liquid crystal display element is significantly reduced. This problem is not limited to the case of using a plurality of projection optical systems, even if: a projection optical system with a single projection area 'moves the mask and the glass substrate synchronously for the first scan exposure' and allows the mask and the glass substrate to Orthogonally move in the direction of synchronous movement by a distance equivalent to the length of the projection area, and let the photomask and the glass substrate move synchronously again to perform the second scanning exposure process once or repeatedly several times to make multiple divisions. Figure 6 This paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) ------------------- Order · -------.. (Please first Read the precautions on the reverse side and fill out this page) 486741 A7 _____B7______ V. The invention description (&) cases are joined in a partially overlapping state, and the above-mentioned streaks may also occur. The present invention is based on the consideration of the above points, and its object is to provide an exposure device and an exposure method, which can prevent the quality of the element from being reduced even if a part of the substrate is repeatedly exposed. An object of the present invention is to form a pattern with high accuracy in a repeating area and a non-repeating area. [Means for Solving the Problems] The present invention for achieving the above-mentioned object adopts the following configurations corresponding to Figs. 1 to 22 showing the embodiment. The exposure device (1) of the present invention illuminates the mask (M) with exposure light emitted from an optical integrator (14) formed with a plurality of light source images, so that a part of the pattern of the mask (M) Repeated exposure on the substrate (P); characterized in that it includes: an illuminance adjustment device (PF), which is arranged on the conjugate surface of the optical integrator (14) and the photomask (M) to adjust the repeated exposure portion⑺ The illuminance; and the moving devices (51, 52) move the illuminance adjusting device (PF) within the common plane. In addition, the exposure method of the present invention illuminates the mask (M) with the exposure light emitted from the optical integrator (14) formed with a plurality of light source images, so that a part of the pattern of the mask (M) is The substrate (P) is repeatedly exposed, and is characterized by comprising: an illuminance adjusting device (PF) arranged on the conjugate surface of the optical integrator (14) and the photomask (M) to adjust the illuminance of the repeatedly exposed portion. Steps; and 'the step of moving the illuminance adjustment device (PF) within the conjugate plane. 07 This paper size applies the Chinese National Standard (CNS) A4 specification (fine X 297 public love) ---- Ψ ---- ------------ Order --------- · (Please read the notes on the back before filling out this page) 486741 A7 ___B7___________ V. Description of the Invention (U) As for the exposure device and exposure method, the illuminance of the repeated exposure portion ⑺ on the substrate (P) can be adjusted by moving the illuminance adjustment device (PF) within the conjugate plane. Therefore, when the amount of chemical reaction of the photoresist caused by the exposure in the repeated exposure portion is larger than that in the non-repeated exposure portion (T), by reducing the illumination intensity in the repeated exposure portion, the The chemical reaction amount of the photoresist in the exposed portion is the same as the chemical reaction amount of the photoresist in the non-repeatedly exposed portion (T), so the shape of the pattern in each portion will also be the same. In addition, in order to achieve the above object, the exposure method according to the first aspect of the present invention, in order to transfer the pattern on the workpiece to a plurality of areas that partially overlap the peripheral portion, respectively, can be gradually reduced in the peripheral portion. The exposure amount setting mechanism scans and exposes the aforementioned regions with energy beams. Among them, the exposure amount of the aforementioned partially overlapped region and the exposure amount of the region different from the overlapped region can be independently set and can be continuously adjusted. Adjustment. In addition, in order to achieve the above object, the exposure method of the second aspect of the present invention, in order to transfer patterns in a plurality of areas where the workpiece partially overlaps the peripheral portion, is used to gradually reduce the The exposure amount setting mechanism scans and exposes each of the regions with an energy beam; wherein the plurality of regions include a first region and a second region that are formed substantially simultaneously on the workpiece, and the first and second regions The exposure amount of the repeatedly-exposed area in which the areas overlap and the exposure amount of the area different from the repeatedly-exposed area are set independently. In addition, for the purpose of the description, the third aspect of the present invention is an exposure method, in order to partially overlap the peripheral area 8 on the workpiece (please read the precautions on the back before filling this page) --- ----- Order --------- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 486741 A7 ___JB7__ 5. Description of the invention (]) Reprint the pattern separately, but Through the setting mechanism that can gradually reduce the exposure amount in the peripheral portion, the respective regions are scanned and exposed with energy beams; wherein the workpiece is overlapped by the energy beams from a plurality of light source images composed of a real image or a virtual image For irradiation, the setting mechanism is disposed at a position optically conjugated to the workpiece in an optical path corresponding to at least two optical paths among the optical paths of the plurality of energy beams from the plurality of light source images. The exposure method according to the fourth aspect of the present invention is based on the exposure method according to the third aspect, and the exposure amount of the aforementioned partially overlapped area and the exposure amount of the overlapped area to be different from each other are independently set. The exposure method of the fifth aspect of the present invention is based on the exposure method of the third or fourth aspect, and the exposure amount of the aforementioned partially overlapped area can be continuously set. The exposure method according to the sixth aspect of the present invention is the exposure method according to the first, second, third, fourth, or fifth aspect. The plurality of areas are formed substantially simultaneously on the workpiece. The first area and the second area, and the setting means is configured to set an exposure amount of the repeated exposure area where the first and second areas overlap. The exposure method according to the seventh aspect of the present invention is the exposure method according to any one of the first to fifth aspects, and the setting means sets the exposure amount of the partially overlapped area to control the partially overlapped area. The outline of the aforementioned transliteration pattern. The exposure method according to the eighth aspect of the present invention is the exposure method according to the seventh aspect. The setting mechanism is such that the outline of the partially overlapping area and the outline of the partially overlapping area are different areas. 9 ------------------- Order · -------- (Please read the precautions on the back before filling out this page) This paper size applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) 486741 A7 ___B7 V. Description of the invention (纟) The exposure amount is set in a manner of approximately the same outline. The exposure method according to the ninth aspect of the present invention is the exposure method according to the seventh or eighth aspect, and the outline of the pattern includes the line width of the pattern. The exposure method according to the tenth aspect of the present invention is the exposure method according to any of the first to ninth aspects, and the plurality of areas include the first area and the first area substantially simultaneously formed on the workpiece. In the second area and the third area, the setting mechanism is an exposure amount of the first repeated exposure area overlapping the first and second areas, and a second repeating exposure area overlapping the second and third areas. The exposure amounts are set independently of each other. In addition, in order to achieve the above-mentioned object, the exposure device according to the eleventh aspect of the present invention, in order to transfer the pattern on the workpiece to the peripheral area that partially overlaps the plurality of areas, respectively, transfers the pattern, which can gradually reduce the The exposure amount setting mechanism scans and exposes the aforementioned regions with energy beams. Among them, the setting mechanism can independently set the exposure amount of the partially overlapped region and the exposure amount of the region that is different from the overlapped region. , And can be adjusted continuously. In addition, in order to achieve the above-mentioned object, the exposure apparatus according to the twelfth aspect of the present invention, in order to transfer the pattern on the workpiece to a plurality of areas that partially overlap the peripheral portion, respectively, can be gradually reduced in the peripheral portion. The exposure amount setting mechanism scans and exposes the foregoing regions with energy beams. The plurality of regions include the first region and the second region that are formed substantially simultaneously on the workpiece. The exposure amount of the repeated exposure area overlapping the first and second areas, and this repeated exposure area 10 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before (Fill in this page) Order --------- 486741 A7 V. Description of the invention (彳) / Set the exposure amount for different areas independently. In addition, in order to achieve the above-mentioned object, the exposure device according to the thirteenth aspect of the present invention, in order to transfer the patterns on the workpiece to a plurality of areas that partially overlap the peripheral portion, respectively, is used to gradually reduce the The exposure amount setting mechanism scans and exposes each of the regions with an energy beam. Among them, it is an optical integrator provided with a plurality of light source images composed of a real image or a virtual image. The setting mechanism is configured from: Among the optical paths of the plurality of energy beams of the light source image, at least two optical paths are optically conjugated to the workpiece. Regarding the exposure device of the fourth aspect of the present invention, the exposure device of the thirteenth aspect is provided in the 'exposure setting device', which sets the exposure amount of the partially overlapped region independently from the exposure amount of the overlapped region as a different region. set up. The exposure apparatus according to the fifteenth aspect of the present invention is the exposure apparatus according to the thirteenth or fourteenth aspect, and the setting means can continuously set the exposure amount of the partially overlapping area. The exposure apparatus according to the sixteenth aspect of the present invention is an exposure apparatus according to the ^, 13, 14, or 15th aspect, and the aforementioned plurality of areas are included in the first area formed substantially simultaneously on the workpiece. And the second region, and the setting mechanism is configured to set the exposure amount of the overlapping region where the first and second regions overlap. Regarding the seventeenth aspect of the present invention, the exposure device is an exposure device according to any one of the uth to the fifth aspect. The aforementioned setting mechanism sets the aforementioned exposure amount of the aforementioned partially overlapping area to control the aforementioned partially overlapping area.纟 Rong & the outline of the aforementioned transliteration pattern. 11 (Please read the notes on the back before filling this page)

· ϋ n n n ϋ n I 一οιπ t ϋ n n n an I n I 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 _____B7____ 五、發明說明（"） ’ 有關本發明之第18態樣的曝光裝置’係於第17態樣 之曝光裝置中’前述設定機構係以讓前述部分重疊之區域 的前述輪廓、與前述部分重疊之區域爲不同區域的輪廓成 爲大致同一輪廓的方式來設定前述曝光量。 有關本發明之第19態樣的曝光裝置，係於第17或第 18態樣之曝光裝置中’前述圖案的輪廓係包含前述圖案的 線寬。 有關本發明之第20態樣的曝光裝置，係於第π〜第 19之任一態樣之曝光裝置中，前述複數之區域係包含在前 述工件上實質地同時形成之第1區域、第2區域、以及第 3區域，前述設定機構係將對於前述第1與第2區域呈重 疊之第1重複曝光區域的曝光量、對於前述第2與第3區 域呈重疊之第2重複曝光區域的曝光量彼此獨立地來設定 〇 有關本發明之第21態樣的曝光裝置，係於第n〜第 I2、以及第Η〜第2〇之任一態樣之曝光裝置中，前述設定 機構係設定在前述工件附近之位置、或是與前述工件之位 置呈大致共軛之位置處。 有關本發明之第22態樣的曝光裝置，係於第2ι態樣 之曝光裝置中’含有：照明視野光闌，係用以規定前述光 罩上之照明區域；以及’照明視野光闌成像光學系統，係 於前述光罩上形成該照明視野光闌之像；前述設定機構係 設定在前述照明視野光闌之位置附近。 有關本發明之第23態樣的曝光裝置，係於第2ι態樣 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公爱）~ ------ --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 ________B7_____ 五、發明說明（、v) 之曝光裝置中，前述設定機構係配置於前述光罩附近的位 置。 有關本發明之第24態樣的曝光裝置，係於第21態樣 之曝光裝置中，包含投影光學系統(將前述光罩的像投影於 前述工件），前述設定機構係配置於：形成於前述投影光學 系統中之前述光罩的中間像所形成的位置附近。 有關本發明之第25態樣的曝光裝置，係於第11〜24 態樣之任一曝光裝置中，前述設定機構係具有··光透過性 之基板、以及在該光透過性之基板上經圖案化之遮光圖案 或衰光圖案。 有關本發明之第26態樣的曝光裝置，係於第11〜24 態樣之任一曝光裝置中，前述設定機構係具有：形成爲既 定形狀之遮光性或衰光性之基材。 又，爲了達成上述目的，有關本發明之第27態樣之元 件製造方法，係包含一微影製程，該製程係以第11〜第26 之任一態樣的曝光裝置，將光罩上之圖案掃描曝光至工件 上。 [發明之實施形態] 本發明之第1或第π態樣，由於讓重複曝光區域之曝 光量與非重複曝光區域之曝光量彼此獨立、且連續地變化 ，所以重複曝光區域、非重複曝光區域之光阻圖案的輪廓( 線寬、厚度等）可獨立地連續控制。從而，可提升跨越重複 曝光區域與非重複曝光區域之圖案的線寬均一性、間距均 一性，可讓高精度之圖案遍及大面積來形成。 13 本紙張尺度適用中國國家標準（CN5)A4規格（21〇 X 297公® ) ~ (請先閱讀背面之注意事項再填寫本頁) t--------訂---------_ 486741 A7 __________B7__ 五、發明說明（夕） 又，本發明之第2或第12態樣中，以在工件上實質地 同時形成之第1區域與第2區域來形成圖案之際，由於第 1與第2區域之重複曝光區域、非重複曝光區域的光阻圖 案之輪廓（線寬、厚度等）可獨立地連續控制，所以可讓高 精度之圖案以高生產量的方式遍及大面積來形成。 又，本發明之第3或第13態樣中，由於在形成面光源 (具有由實像或虛像所構成之複數的光源像）的光學積分器 的上游側（光源側）配置著設定機構，所以基於在工件上之 能束到達區域（曝光區域）內之位置所導致之開口數的不均 一性（σ差異）少的狀態下，重複曝光區域與非重複曝光區 域之光阻圖案的輪廓（線寬、厚度等）可獨立地來連續控制 ，可讓高精度之圖案遍及大面積來形成。 (第1實施形態） 以下，參照圖1乃至圖13、圖22來說明本發明之曝 光裝置與曝光方法之第1實施形態。此處，係以作爲基板 使用著在液晶顯示面板製造上所採用之四方形的玻璃基板 ，藉掃描曝光的方式將形成於光罩上之液晶顯示元件的電 路圖案轉寫到玻璃基板上之情形爲例來說明。又，此處作 爲光學積分器係以使用由複數之小透鏡所構成之複眼透鏡 的情形爲例來說明。 圖1所示係本發明所提供之掃描型之曝光裝置1的槪 略構成立體圖。曝光裝置1係以：照明光學系統2、由複 數之投影系統模組3a〜3e所構成之投影光學系統3、用以 保持光罩(光栅)M之光柵平台4、以及用以保持玻璃基板( 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------章—tr---------· (請先閱讀背面之注意事項再填寫本頁) 486741 A7 _ ._B7_____ 五、發明說明（\Y) /基板)Ρ之基板平台5爲主體所構成者。又，光罩Μ以及基 板Ρ係沿著ΧΥ平面來配置，以ΧΥ平面當中之掃描方向（ 同步移動方向）爲X方向、以直交於X方向的非掃描方向 爲Υ方向，並以直交於ΧΥ平面之投影光學系統3的光軸 方向爲Ζ方向。 照明光學系統2係使得由圖2所示之超高壓水銀燈等 之光源6所射出之光束(曝光用光）照明於光罩Μ上者，係 由分別對應於中繼光學系統、光纖盒(光導件)9以及投影系 統模組3a〜3e而配置之照明系統模組10a〜10e(其中於圖2 中，爲便於說明起見僅顯示對應於照明系統模組10a者)所 構成。 又，位於橢圓鏡6a之第一焦點位置的光源6所射出之 光束係以橢圓鏡6a而聚光於第二焦點位置。中繼光學系統 係用以將此第二焦點位置之光源像成像於光纖盒9之入射 面，在其光路中係配置著分光鏡7、波長選擇濾光器8以 及曝光光閘12。該分光鏡7係將曝光上所需波長的光束予 以反射，讓其他波長的光束通過。由分光鏡7所反射之光 束，係射入波長選擇過濾器8，成爲投影光學系統3進行 曝光時適宜的波長(通常係含有g、h、i線當中至少一個頻 帶)的光束。 曝光光閘12配置成可相對於光束之光路進退自如，於 非曝光時插入光路中可遮斷光束對於光罩Μ的照明，相反 地於曝光時自光路退出使得光束照明於光罩Μ上。又在曝 光光閘12,附設有讓該曝光光閘12相對於光路進退移動 15 --------------------訂·-------I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ___B7__ 五、發明說明（A) 」/之光閘驅動部16。光閘驅動部16之驅動係由控制裝置17 來控制。光纖盒9係讓入射之光束分歧爲五條而經由反射 鏡11入射到各照明系統模組10a〜10e。 各照明系統模組10a〜l〇e係由輸入光學系統與聚光光 學系統所槪略構成。又’於本實施形態中，與照明系統模 組l〇a爲相同構成之照明系統模組l〇b〜10e係在X方向與 Y方向隔著一定的間隔來配置。又，來自各照明系統模組 10a〜10e的光束係成爲照明光罩Μ上之相異照明區域的構 成。 輸入光學系統係藉由來自光纖盒9之射出面的光束來 形成照度均一之第二光源像。在輸入光學系統中係設有光 量調整機構。此光量調整機構係具備濾光器21，該濾光器 21係例如於玻璃板上以Cr等圖案化成爲簾狀、透過率沿 著Y方向以某範圍做線性的漸次變化。又，濾光器21藉 由濾光器驅動部22而在垂直於光軸的方向移動，而可得到 任意之透過率、亦即任意的曝光能量。此濾光器驅動部22 係藉由控制裝置17來控制其驅動。 通過光量調整機構之光束係經由中繼透鏡13依次射人 圖案化濾光器(照度調節裝置)PF以及複眼透鏡(光學積分器 )14。複眼透鏡14係用以讓照度均一化之物，於射出面側 形成二次光源。又，關於圖案化濾光器PF以及複眼透鏡 14的詳細部分將於後述。通過複眼透鏡14之光束係受到 未予圖示之σ光闌（開口光闌)所限制(規定），藉由聚光光學 系統之聚光透鏡I5對光罩Μ之照明區域以均一的照度來 16 (請先閱讀背面之注意事項再填寫本頁) --------訂---------· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ____ B7__ 五、發明說明（β ). - 照明。 又，於聚光光學系統中，係配置著光量監測機構。此 光量監測機構，係以配置於光路中之半透鏡19將光束的一 部分加以反射而射入偵測器20中、檢測該光量，藉此偵測 光路中之照度。檢測之照度訊號係輸出到控制裝置17。控 制裝置17可控制光量監測機構與光量調整機構，藉此將每 個照明系統模組之光束的光量調整到既定値。 通過光罩Μ之光束會分別射入投影系統模組3a〜3e。 接著，照明區域之光罩Μ的圖案會以既定之成像特性而轉 寫到塗佈有光阻劑之玻璃基板Ρ上。各投影系統模組 3a〜3e係由：用以將光罩Μ之像往X方向或Υ方向位移之 像位移機構、用以形成光罩Μ之圖案的中間像之反射折射 型光學系統、於玻璃基板Ρ上設定梯形狀之投影區域的視 野光闌、以及使得光罩Μ之圖案像的倍率變化之倍率調整 機構(皆未圖示)所構成。 如圖22所示，各投影系統模組3a〜3e之投影區域ΡΑ 具有：於玻璃基板P上重複地受到曝光之接合部(重複曝光 部分)J、未重複而受到曝光之長方形部（非重複曝光部分)T ，當在X方向進行掃描曝光時接合部J之曝光能量的和係 與長方形部T之曝光能量相等。又，本實施形態之投影區 域PA的形狀雖爲梯形，但也可爲六角形或菱形、平行四 邊形等。 光栅平台4係用以保持光罩Μ之物，在待進行一維空 間之掃描曝光的X方向有長的行程，在直交於掃描方向的 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂·-------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 -------B7__ 五、發明說明（6 ) , / -γ方向則具有數mm程度之微小量的行程。如圖2所示， 於光柵平台4係具備用以將該光柵平台4驅動於X方向與 Y方向之光栅平台驅動部37。該光柵平台驅動部37係由 控制裝置17所控制。 如圖1所示，在光柵平台4上的端緣處，在直交方向 分別設有移動鏡38a，38b。於移動鏡38a，雷射干涉儀39a 係與其對向配置著。又，於移動鏡38b，雷射干涉儀39b 係與其對向配置著。該等雷射干涉儀39a，39b係分別對移 動鏡38a，38b射出雷射光來量測與該移動鏡38a，38b之間的 距離’藉以高分解能、高精度地檢測出光柵平台4之X方 向、Y方向之位置(也就是光罩Μ之位置）。又，雷射干涉 儀39a，39b之檢測結果係輸出到圖1並未顯示之控制裝置 17 〇 基板平台5係用以保持、移動玻璃基板p之物，與光 柵平台4同樣，在待進行一維空間之掃描曝光的X方向有 長的行程，在直交於掃描方向的Y方向則具有用以步進移 動之長的行程。又，於基板平台5係具備用以將該基板平 台5驅動於X方向與Y方向之基板平台驅動部40。該基 板平台驅動部40係由控制裝置17所控制。再者，基板平 台5受到基板平台驅動部40的控制，也可在z方向移動 自如。又，實際上，玻璃基板P係由支撐於基板平台5之 保持件所吸附保持著，惟此處方便起見係將其視爲保持於 基板平台5。 又，於基板平台5之端緣處，沿著直交方向分別設有 18 Ϊ紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) —~一 — --------tr--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 ________ 五、發明說明（q ) 移動鏡42a，42b。於移動鏡42a，雷射干涉儀43a係與其對 向配置著。又，於移動鏡42b，雷射干涉儀43b係與其對 向配置著。該等雷射干涉儀43a，43b係分別對移動鏡 42a，42b射出雷射光來量測與該移動鏡42a，42b之間的距離 ，藉以高分解能、高精度地檢測出基板平台5之X方向、 Y方向之位置(也就是玻璃基板P之位置）。又，雷射干涉 儀43a，43b之檢測結果係輸出到圖1並未顯示之控制裝置 17。 又，如圖2所示，於基板平台5上係配置著與玻璃基 板P之曝光面大致同等高度之用以檢測照度的偵測器(照度 檢測裝置)41。偵測器41係檢測玻璃基板p上之光束的照 度，將檢測出之照度訊號輸出到控制裝置17。 於光罩Μ之上方係配置著對準系統49a，49b以檢測形 成於光罩Μ之光罩對準標記(未予圖示)與形成於玻璃基板 Ρ之基板對準標記(未予圖示）。對準系統49a，49b係對於光 罩對準標記照射探測光，然後接收光罩對準標記之反射光 以及經過光罩對準標記所得之基板對準標記的反射光，來 量測光罩Μ與玻璃基板P之位偏量。又，對準系統 49a，49b之量測結果係輸出到控制裝置17。又，對準系統 49a，49b具有往X方向移動之驅動機構(未予圖示），在掃描 曝光時可自照明區域內退出。 圖3(a)係自入射光側來看五個照明系統模組中之位於 中央之照明系統模組l〇c的複眼透鏡14之俯視圖，圖3(b) 係一個小透鏡之放大圖。如該等圖所示般，各複眼透鏡14 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 __._B7____ 五、發明說明（β ) 係分別對應於投影到玻璃基板P之投影區域PA、且截面成 四角形狀之複數(在圖中爲16個）之小透鏡所組合而成者。 各小透鏡之入射光側透鏡面之後側焦點大致位於射出 光側透鏡面之位置，射出光側透鏡面之前側焦點則位於入 射光側透鏡面之位置。是以，射入複眼透鏡14之平行光束 ，在各小透鏡的射出光側透鏡面的附近聚光，於複眼透鏡 14的射出面附近，形成有相等於小透鏡之數量的二次光源 (光源像）。是以，自複眼透鏡14之射出面附近所形成之多 數的二次光源所射出之光束分別照明於光罩Μ與玻璃基板 Ρ，藉此，玻璃基板Ρ上之曝光面係重疊性地受到均一照 明。 圖案化濾光器PF係用以調節玻璃基板Ρ上之投影區 域ΡΑ之照度，如圖4所示般，係由以Ο等所形成之六角 形的複數之遮光圖案(遮光部)SP、對應於複眼透鏡14之外 形輪廓之複數的L字形之對位標記AM所構成，該遮光圖 案SP(以及對位標記AM)係以位於光罩Μ與玻璃基板P之 共軛面的方式配置成在複眼透鏡14之光源側於共軛面內向 X方向自由移動。 又，遮光圖案SP係與複數之小透鏡的配置爲相同間 距般沿著X方向與Υ方向配置，如圖5所示，在Υ方向係 橫跨於相互鄰接之小透鏡間來配置。又，各遮光圖案SP 之大小，在圖5所示之中央位置係自投影區域ΡΑ分開而 並未遮光，但在圖6所示之遮光位置則是將位於Υ方向兩 側之投影區域ΡΑ的雙方(具體而言係投影區域ΡΑ中之接 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 ____B7____ 五、發明說明（β ) 合部J)做既定量之遮光。 圖7所示係複眼透鏡14與圖案化濾光器PF之組裝構 成的截面圖，圖8係自入射面側所見之部分側視圖。 如圖7所示般，複眼透鏡14係在圓筒狀之金屬件內由 矽酮所接著保持著，光束B之入射面側則由覆蓋玻璃25 所覆蓋著。於金屬件24之入射面側(+Z側）的側部，相互 密接之矩形的支撐板26、27係突出於+X方向而被固定著 。又，於支撐板26之+Z側，移動台29係透過線導件28 在X方向移動自如地被裝設之。 支撐板26、27係由四個固定小螺釘32如圖9所示般 自+Z側來螺合固定。此時，固定小螺釘32係通過形成於 支撐板27之貫通孔27a而螺固於支撐板26。又，圖中雖 未顯示，貫通孔27a係延伸於Y方向所形成之長孔。又， 固定小螺釘32之四個安裝位置當中，位於-X側之兩處， 可經由形成於移動台29之貫通孔33而自由地進行固定小 螺釘32之緊固•緊固解除。又，於支撐板26、27係設有 用以對複眼透鏡14與圖案化濾光器PF之Y方向的相對位 置關係進行微調之微調部34。 如圖10所示般，微調部34係由圓形之孔部35(形成 於支撐板26)、長孔部36(在支撐板27係延伸於X方向所 形成，於Y方向之寬度僅略寬於孔部35)所構成。此微調 部34之微調係以圖11所示之定位用工具44來進行。於定 位用工具44係形成有：嵌合部44a，其位於前端可旋轉自 如地嵌合於孔部35 ;以及，偏心部44b，其相對於嵌合部 21 --------------------訂---------^9 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ___^___ 五、發明說明（V") 44a爲大致同直徑，且較嵌合部44a在基端側呈偏心配置 。又，於移動台29係形成有開口於微調部34、藉由定位 用工具44來進行微調之貫通孔45。 另一方面，在移動台29，用以保持上述圖案化濾光器 PF且繞Z軸旋轉自如地嵌合之圖8所示之立體視爲圓形之 截面大致Z狀的金屬件30係由固定小螺釘32所締結固定 。此時，固定小螺釘32係經過在金屬件30之圓周方向上 以等間隔所成之三個貫通孔30a而螺固於移動台29。又， 各貫通孔30a係形成於在圓周方向(繞Z軸之方向)所延伸 之長孔。 又，在移動.台29與金屬件30係設有用以對複眼透鏡 14與圖案化濾光器PF之0方向的相對位置關係進行微調 之微調部46。如圖12所示般，微調部46係由圓形之孔部 47(形成於移動台29)、長孔部48(在金屬件30係延伸於X 方向所形成，於Y方向之寬度僅略寬於孔部47)所構成。 此微調部46之微調係以圖11所示之定位用工具50來進行 。於定位用工具50係形成有：嵌合部50a，其位於前端可 旋轉自如地嵌合於孔部47 ;以及，偏心部50b，其相對於 嵌合部50a爲大致同直徑，且較嵌合部50a在基端側呈偏 心配置。 又，於移動台29，一體安裝於馬達51之旋轉軸51a 的偏心凸輪52係肷合於長孔部53中。如圖13所示，偏心 凸輪52在俯視上呈現圓形，相對於旋轉軸51a係偏心安裝 著。長孔部53之X方向的寬度與偏心凸輪52之外徑大致 22 -----------1.-------tT---------φ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 - ------------- 五、發明說明（V\ ) 相同’且延伸於Y方向來形成。藉由該等馬達51與偏心 凸輪52來構成讓圖案化濾光器PF移動於χ方向之移動裝 置。 又’於馬達51係附設有編碼器(未予圖示），其旋轉數 係由編碼器之零點位置起算之脈衝數來管理。再者，於移 --動台29透過軸部54係附設有將移動台29往+X方向彈壓( 拉伸）之施壓彈簧55。 控制裝置Π係藉由來自雷射干涉儀39a，39b之輸出來 監測光柵平台4在χγ平面內之位置，並控制光栅平台驅 動部37來將光柵平台4往既定之位置移動，又藉由來自雷 射干涉儀43a，43b之輸出來監測基板平台5在XY平面內 之位置，並控制基板平台驅動部40來將基板平台5往既定 之位置移動。 亦即，控制裝置17係一邊監測光柵平台4與基板平台 5之位置一邊控制兩驅動部37,40，使得光罩Μ與玻璃基 板Ρ相對於投影系統模組3a〜3e以任意的掃描速度(同步移 動裝置)往X方向同步移動。再者，控制裝置17係依據編 碼器之脈衝數來控制馬達之旋轉，從而控制圖案化濾光器 PF之位置。 在上述之構成的曝光裝置1當中，複眼透鏡14與圖案 化濾光器PF必須爲例如土0.1mm以內之高對位精度。是以 ’乃一邊看顯微鏡一邊讓圖案化濾光器PF之對位標記AM 對準於複眼透鏡14之外形輪廓來進行定位。 此處，爲了微調圖案化濾光器PF在Y方向之位置， 23 (請先閱讀背面之注意事項再填寫本頁) ---------訂·-------I · 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 486741 A7 ____B7 ____ 五、發明說明（/ ) · 乃在鬆開固定小螺釘32的狀態下，讓定位用工具44之嵌 合部自+Z側透過支撐板27之長孔部36而嵌合於支撐 板26之孔部35之後，使得工具44繞Z軸旋轉。由於定 位用工具44之偏心部44b相對於嵌合部44a呈偏心之故， 如圖10所示般，其外周面會伴隨旋轉而抵壓於支撐板27 來往+Y方向(旋轉方向相反的情況則爲-Y方向)移動。此時 ，貫通固定小螺釘32之支撐板27的貫通孔27a係成爲延 伸於Y方向之長孔，所以支撐板27可順利地往+Y方向(或 -Y方向)移動。 從而，藉由調整定位用工具44之旋轉量，可將支撐板 27相對於支撐板26在Y方向之相對位置關係加以微調。 由於支撐板26係透過24而與複眼透鏡14 一體構成，支撐 板27係透過線導件28、移動台29以及金屬件30而與圖 案化濾光器PF在Y方向一體構成，藉由使用定位用工具 44，可進行圖案化濾光器PF相對於複眼透鏡14在Y方向 之相對位置關係的微調。又，於對位結束之後，以固定小 螺釘32來締結固定支撐板26、27。 又，爲了微調圖案化濾光器PF在0方向之位置，乃 在鬆開固定小螺釘31的狀態下，讓定位用工具50之嵌合 部50a自+Z側透過金屬件30之長孔部48而嵌合於移動台 29之孔部47之後’使得工具50繞Z軸旋轉。由於定位用 工具50之偏心部50b相對於嵌合部50a呈偏心之故，如圖 12所示般，其外周面會伴隨旋轉而抵壓於金屬件30來往 逆時鐘旋轉方向（當旋轉方向相反的情況則爲順時鐘方向） 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---------· 486741 A7 ^__B7___ 五、發明說明（Τι ) /移動。此時，·貫通固定小螺釘31之金屬件30的貫通孔 30a係成爲延伸於<9方向之長孔，所以金屬件30可順利地 往+0方向（或-Θ方向)移動。 從而，藉由調整定位用工具50之旋轉量，可將金屬件 30相對於移動台29在Θ方向之相對位置關係加以微調。 亦即，於微調部46使用定位用工具50，可進行圖案化濾 光器PF相對於複眼透鏡14在0方向之相對位置關係的微 調。又，於對位結束之後，以固定小螺釘31來締結固定移 動台29與金屬件30。 接著，將上述所組合之複眼透鏡14、圖案化濾光器 PF等以使得圖案化濾光器PF之遮光圖案SP位於與複眼透 鏡14之光罩Μ的共軛面的方式來分別組裝於照明系統模 組10a〜10e上。 接著，說明藉由馬達51之驅動所致之圖案化濾光器 PF的動作。雖一旦馬達51之旋轉軸51a旋轉則偏心凸輪 52也會旋轉，但由於偏心凸輪52相對於旋轉軸51a呈偏 心狀態之故’其外周面乃將移動台29往X方向抵壓而移 動。例如，若旋轉軸51a自圖13所示之位置做順時鐘旋轉 ，則移動台29會往+X方向移動，若旋轉軸51a做逆時鐘 旋轉，則移動台29會往-Y方向移動。是以，藉由控制偏 心凸輪52之旋轉量，可調整移動台29之X方向的位置。 亦即，藉由控制馬達51的驅動，可進行圖案化濾光器pF 相對於複眼透鏡I4在X方向之相對位置關係的微調。 又，於移動台29之X方向的位置調整中，由於施壓 . --------^---------. (請先閱讀背面之注意事項再填寫本頁) 25 486741 A7 B7 五、發明說明（Ά ) / 彈簧55始終對於移動台29往+χ方向彈壓，是以即使移動 台29之長孔部53與偏心凸輪52之間存在著間隙，移動台 29也始終抵接於偏心凸輪52之外周面的-X側。是以，移 動台29可伴隨偏心凸輪52的旋轉而安定地追隨移動於X 方向’可防止圖案化濾光器PF與複眼透鏡14之相對位置 關係的不安定之變動。 其次’就藉.由上述構成之曝光裝置1來調節玻璃基板 P上之投影區域PA的照度之順序來說明。又，以下，光柵 平台4、基板平台5以及各照明系統模組1〇a〜1〇e之照明 光閘12的驅動係透過光柵平台驅動部37、基板平台驅動 部40以及光閘驅動部16來進行，個別之驅動係依據用以 控制分別之驅動部37、40、16的控制裝置17來進行。又 ，馬達51之旋轉驅動也是依據控制裝置17之控制來進行 〇 首先’於實行曝光處理之前，係對於塗佈有實際曝光 所用之光阻劑的玻璃基板事先進行測試曝光等，來量測待 調節之長方形部T與接合部J之間的照度差(以及照度不均 )。作爲此量測方法，較佳的做法係例如以SEM(Scanning· Ϋ nnn ϋ n I οιπ t ϋ nnn an I n I This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 486741 A7 _____B7____ 5. Description of the invention (") The exposure device of the eighteenth aspect is the exposure device of the seventeenth aspect. The aforementioned setting mechanism is such that the outline of the partially overlapping area and the outline of the partially overlapping area are different from each other. Way to set the aforementioned exposure. The exposure apparatus according to the nineteenth aspect of the present invention is the exposure apparatus according to the seventeenth or eighteenth aspect. The outline of the aforementioned pattern includes the line width of the aforementioned pattern. The exposure apparatus according to the twentieth aspect of the present invention is an exposure apparatus according to any of the aspects π to 19, and the plurality of areas include the first area and the second area formed substantially simultaneously on the workpiece. The area and the third area, the setting means is an exposure amount of the first repeated exposure area overlapping the first and second areas, and an exposure of the second repeated exposure area overlapping the second and third areas. The exposure device of the 21st aspect of the present invention is set in any of the exposure devices of the nth to the I2th, and the ninth to the 20th aspect. The aforementioned setting mechanism is set at A position near the workpiece, or a position substantially conjugate to the position of the workpiece. The exposure device according to the twenty-second aspect of the present invention is the exposure device according to the second aspect, which includes: an illumination field diaphragm, which is used to define the illumination area on the aforementioned mask; and 'illumination field diaphragm imaging optics. The system is configured to form an image of the illumination field diaphragm on the photomask; the setting mechanism is set near the position of the illumination field diaphragm. The exposure device of the 23rd aspect of the present invention is based on the 12th aspect of the 12th paper. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 public love) ~ ------ ----- --------------- Order --------- (Please read the precautions on the back before filling this page) 486741 A7 ________B7_____ V. Description of the invention (, v) In the exposure apparatus, the setting mechanism is disposed at a position near the photomask. The exposure apparatus according to the twenty-fourth aspect of the present invention is an exposure apparatus according to the twenty-first aspect, and includes a projection optical system (projecting the image of the mask on the workpiece), and the setting mechanism is configured to be formed on the foregoing: Near the position where the intermediate image of the aforementioned mask is formed in the projection optical system. The exposure device according to the twenty-fifth aspect of the present invention is an exposure device according to any one of the eleventh to twenty-fourth aspects, and the setting mechanism is a substrate having a light-transmitting property and a substrate having the light-transmitting property. Patterned shading pattern or decay pattern. An exposure apparatus according to a twenty-sixth aspect of the present invention is an exposure apparatus according to any one of the eleventh to twenty-fourth aspects, and the setting means has a light-shielding or decaying base material formed into a predetermined shape. In addition, in order to achieve the above object, the 27th aspect of the present invention relates to a method for manufacturing a component, which includes a lithography process. The process uses an exposure device in any of the 11th to 26th aspects to place a photomask on The pattern scan is exposed on the workpiece. [Embodiment of the invention] In the first or π aspect of the present invention, since the exposure amount of the repeatedly exposed area and the exposure amount of the non-repeated exposure area are independent of each other and continuously change, the repeatedly exposed area and the non-repeated exposure area The outline (line width, thickness, etc.) of the photoresist pattern can be independently and continuously controlled. Therefore, the uniformity of the line width and the uniformity of the pattern across the repeatedly exposed area and the non-repeatedly exposed area can be improved, and a high-precision pattern can be formed over a large area. 13 This paper size is applicable to China National Standard (CN5) A4 (21〇X 297 males) ~ (Please read the precautions on the back before filling this page) t -------- Order ----- ----_ 486741 A7 __________B7__ 5. Description of the Invention (Even) In the second or twelfth aspect of the present invention, when the first area and the second area are formed substantially simultaneously on the workpiece to form a pattern Since the outlines (line width, thickness, etc.) of the photoresist patterns in the repeatedly exposed areas and the non-repeatedly exposed areas of the first and second areas can be independently and continuously controlled, high-precision patterns can be spread over large areas in a high-throughput manner. Area to form. In the third or thirteenth aspect of the present invention, since the setting mechanism is disposed on the upstream side (light source side) of the optical integrator that forms a surface light source (having a plurality of light source images composed of a real image or a virtual image), The outline (line of the photoresist pattern of the repeated exposure area and the non-repeated exposure area) in a state where there is little unevenness (σ difference) in the number of openings due to the position within the energy beam reaching area (exposure area) on the workpiece. (Width, thickness, etc.) can be independently and continuously controlled, allowing high-precision patterns to be formed over a large area. (First Embodiment) Hereinafter, a first embodiment of an exposure apparatus and an exposure method according to the present invention will be described with reference to Figs. 1 to 13 and 22. Here, a square glass substrate used in the manufacture of a liquid crystal display panel is used as a substrate, and the circuit pattern of the liquid crystal display element formed on the photomask is transferred to the glass substrate by scanning exposure. As an example. Here, as an optical integrator, a case where a fly-eye lens composed of a plurality of small lenses is used is described as an example. FIG. 1 is a perspective view showing a schematic configuration of a scanning type exposure apparatus 1 provided by the present invention. The exposure device 1 is composed of: an illumination optical system 2, a projection optical system 3 composed of a plurality of projection system modules 3a to 3e, a grating stage 4 for holding a mask (grating) M, and a glass substrate ( 14 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------ chapter—tr --------- · (Please read the back first Please note this page before filling in this page) 486741 A7 _ ._B7 _____ V. Description of the invention (\ Y) / substrate) The substrate platform 5 is the main body. The photomask M and the substrate P are arranged along the XY plane, with the scanning direction (synchronous moving direction) in the XY plane as the X direction, the non-scanning direction orthogonal to the X direction as the Y direction, and the orthogonal direction on the XY The optical axis direction of the plane projection optical system 3 is the Z direction. The illumination optical system 2 is a light beam (exposure light) emitted by a light source 6 such as an ultra-high pressure mercury lamp shown in FIG. 2 and illuminated on the mask M, which is respectively corresponding to a relay optical system and an optical fiber box (light guide). Pieces) 9 and lighting system modules 10a to 10e (of which, in FIG. 2, only those corresponding to the lighting system module 10a are shown for convenience of explanation), which are arranged in the projection system modules 3a to 3e. The light beam 6 emitted from the light source 6 located at the first focal position of the elliptical mirror 6a is focused by the elliptical mirror 6a at the second focal position. The relay optical system is used to image the light source image at the second focal position on the incident surface of the optical fiber box 9, and a beam splitter 7, a wavelength selection filter 8 and an exposure shutter 12 are arranged in its optical path. The beam splitter 7 reflects light beams of a desired wavelength on exposure, and allows light beams of other wavelengths to pass. The light beam reflected by the beam splitter 7 is incident on the wavelength selection filter 8 and becomes a light beam of a suitable wavelength (usually containing at least one frequency band among g, h, and i lines) when the projection optical system 3 performs exposure. The exposure shutter 12 is configured to move forward and backward relative to the light path of the light beam. When the light shutter is not exposed, it can be inserted into the light path to block the illumination of the light mask M. Conversely, the light exits the light path on the light mask M during exposure. In addition, the exposure shutter 12 is provided with a 15 that allows the exposure shutter 12 to move forward and backward relative to the optical path. I (Please read the precautions on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 486741 A7 ___B7__ 5. Description of the Invention (A) 16. The drive system of the shutter driving section 16 is controlled by a control device 17. The optical fiber box 9 divides the incident light beam into five beams and enters each of the lighting system modules 10a to 10e through the mirror 11. Each of the lighting system modules 10a to 10e is roughly composed of an input optical system and a condensing optical system. Furthermore, in this embodiment, the lighting system modules 10b to 10e having the same configuration as the lighting system module 10a are arranged at regular intervals in the X direction and the Y direction. The light beams from each of the lighting system modules 10a to 10e constitute a different lighting area on the lighting mask M. The input optical system forms a second light source image with a uniform illuminance by a light beam from the exit surface of the optical fiber box 9. A light quantity adjustment mechanism is provided in the input optical system. This light amount adjusting mechanism is provided with a filter 21 which is patterned into a curtain shape by Cr or the like on a glass plate, for example, and the transmittance changes linearly in a certain range along the Y direction. In addition, the filter 21 is moved in a direction perpendicular to the optical axis by the filter driving section 22 to obtain an arbitrary transmittance, that is, an arbitrary exposure energy. The filter driving section 22 is controlled by a control device 17. The light beam passing through the light amount adjustment mechanism is sequentially emitted to the person through the relay lens 13 and the patterned filter (illumination adjustment device) PF and the fly-eye lens (optical integrator) 14. The fly-eye lens 14 is used to uniformize the illuminance, and forms a secondary light source on the emission surface side. The details of the patterned filter PF and the fly-eye lens 14 will be described later. The light beam passing through the fly-eye lens 14 is restricted (specified) by a σ diaphragm (aperture diaphragm) (not shown). The condenser lens I5 of the condenser optical system is used to uniformly illuminate the illumination area of the mask M. 16 (Please read the precautions on the back before filling this page) -------- Order --------- · This paper size is applicable to China National Standard (CNS) A4 (210 X 297) (Centi) 486741 A7 ____ B7__ V. Description of the invention (β).-Lighting. A light quantity monitoring mechanism is arranged in the condensing optical system. This light amount monitoring mechanism is a half lens 19 arranged in the light path, which reflects a part of the light beam and reflects it into the detector 20 to detect the light amount, thereby detecting the illuminance in the light path. The detected illuminance signal is output to the control device 17. The control device 17 can control the light quantity monitoring mechanism and the light quantity adjustment mechanism, thereby adjusting the light quantity of the light beam of each lighting system module to a predetermined value. The light beams passing through the mask M are incident on the projection system modules 3a to 3e, respectively. Then, the pattern of the mask M in the illuminated area is transferred onto the glass substrate P coated with a photoresist with predetermined imaging characteristics. Each of the projection system modules 3a to 3e is composed of an image displacement mechanism for displacing the image of the mask M in the X direction or the Υ direction, a reflection-refraction optical system for forming an intermediate image of the pattern of the mask M, and The glass substrate P is configured by setting a field diaphragm of a projection region in a trapezoidal shape, and a magnification adjustment mechanism (both not shown) that changes the magnification of the pattern image of the mask M. As shown in FIG. 22, the projection area PA of each of the projection system modules 3a to 3e has a joint portion (repeated exposure portion) J repeatedly exposed on the glass substrate P, and a rectangular portion (non-repeated) exposed without repetition. (Exposure part) T, when scanning exposure is performed in the X direction, the sum of the exposure energy of the joint part J is equal to the exposure energy of the rectangular part T. In addition, although the shape of the projection area PA of this embodiment is trapezoidal, it may be hexagonal, rhombic, parallelogram, or the like. The grating stage 4 is used to hold the mask M. It has a long stroke in the X direction of the scanning exposure to be performed in a one-dimensional space. The 17 paper sizes orthogonal to the scanning direction are applicable to the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) -------------------- Order · -------- (Please read the precautions on the back before filling this page) 486741 A7 ------- B7__ 5. Description of the invention (6), /-The direction of γ has a small amount of stroke of several mm. As shown in FIG. 2, the grating stage 4 includes a grating stage driving unit 37 for driving the grating stage 4 in the X direction and the Y direction. The grating stage driving section 37 is controlled by a control device 17. As shown in Fig. 1, moving mirrors 38a, 38b are provided at the end edges of the grating stage 4 in orthogonal directions, respectively. The laser interferometer 39a is disposed opposite to the moving mirror 38a. Moreover, the laser interferometer 39b is disposed opposite to the moving mirror 38b. The laser interferometers 39a and 39b emit laser light to the moving mirrors 38a and 38b, respectively, to measure the distance between the moving mirrors 38a and 38b, and detect the X direction of the grating stage 4 with high resolution and high accuracy. , Y position (that is, the position of the mask M). In addition, the detection results of the laser interferometers 39a and 39b are output to a control device 17 not shown in FIG. 1. The substrate platform 5 is used to hold and move the glass substrate p, and is the same as the grating platform 4. The scanning exposure of the dimensional space has a long stroke in the X direction, and a long stroke in the Y direction orthogonal to the scanning direction for step movement. The substrate stage 5 includes a substrate stage driving unit 40 for driving the substrate stage 5 in the X and Y directions. The substrate platform driving section 40 is controlled by a control device 17. Furthermore, the substrate stage 5 is controlled by the substrate stage driving unit 40 and can move freely in the z direction. In fact, the glass substrate P is held by the holder supported on the substrate platform 5 by suction, but it is considered to be held on the substrate platform 5 for convenience here. In addition, at the end edge of the substrate platform 5, 18Ϊ paper sizes are provided along the orthogonal direction, which are applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) — ~ 一 — -------- tr --------- (Please read the precautions on the back before filling this page) 486741 A7 ________ 5. Description of the invention (q) Moving mirrors 42a, 42b. A laser interferometer 43a is disposed opposite to the moving mirror 42a. A laser interferometer 43b is disposed opposite to the moving mirror 42b. The laser interferometers 43a and 43b emit laser light to the moving mirrors 42a and 42b, respectively, to measure the distance from the moving mirrors 42a and 42b, thereby detecting the X direction of the substrate platform 5 with high resolution and high accuracy. , Y position (that is, the position of the glass substrate P). The detection results of the laser interferometers 43a and 43b are output to a control device 17 not shown in Fig. 1. As shown in Fig. 2, a detector (illuminance detection device) 41 for detecting the illuminance at substantially the same height as the exposure surface of the glass substrate P is disposed on the substrate stage 5. The detector 41 detects the illuminance of the light beam on the glass substrate p, and outputs the detected illuminance signal to the control device 17. An alignment system 49a, 49b is arranged above the mask M to detect a mask alignment mark (not shown) formed on the mask M and a substrate alignment mark (not shown) formed on the glass substrate P. ). The alignment systems 49a and 49b irradiate detection light on the mask alignment mark, and then receive the reflected light of the mask alignment mark and the reflected light of the substrate alignment mark obtained through the mask alignment mark to measure the photomask M. Offset from glass substrate P. The measurement results of the alignment systems 49a and 49b are output to the control device 17. In addition, the alignment systems 49a and 49b have a driving mechanism (not shown) that moves in the X direction, and can withdraw from the illumination area during scanning exposure. Fig. 3 (a) is a plan view of a fly-eye lens 14 of a centrally located illumination system module 10c among five illumination system modules viewed from the incident light side, and Fig. 3 (b) is an enlarged view of a small lens. As shown in the drawings, each fly-eye lens 14 19 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------------ --Order --------- (Please read the precautions on the back before filling this page) 486741 A7 __._ B7____ V. Description of the invention (β) corresponds to the projection area PA projected onto the glass substrate P, respectively And a plurality of small lenses (16 in the figure) with a quadrangular cross section. The focal point behind the incident light-side lens surface of each small lens is approximately at the position of the outgoing light-side lens surface, and the front-side focus of the outgoing light-side lens surface is at the position of the incident light-side lens surface. Therefore, the parallel light beams entering the fly-eye lens 14 are focused near the lens surface on the light-emitting side of each small lens, and a secondary light source (light source) equal to the number of small lenses is formed near the light-emitting surface of the fly-eye lens 14 image). Therefore, the light beams emitted from the majority of the secondary light sources formed near the exit surface of the fly-eye lens 14 are respectively illuminated to the mask M and the glass substrate P, whereby the exposure surfaces on the glass substrate P are uniformly overlapped. illumination. The patterned filter PF is used to adjust the illuminance of the projection area PA on the glass substrate P. As shown in FIG. A plurality of L-shaped alignment marks AM formed in the outer shape of the fly-eye lens 14 are formed. The light-shielding pattern SP (and the alignment mark AM) is arranged on the conjugate surface of the mask M and the glass substrate P. The light source side of the fly-eye lens 14 moves freely in the X direction within the conjugate plane. In addition, the light-shielding pattern SP is arranged along the X direction and the Υ direction at the same pitch as that of the plurality of small lenses. As shown in FIG. 5, the 遮光 direction is arranged across the small lenses adjacent to each other. In addition, the size of each light-shielding pattern SP is separated from the projection area PA at the center position shown in FIG. 5 and is not light-shielded, but the light-shielding position shown in FIG. Both parties (specifically, the 20 paper sizes in the projection area PA apply to the Chinese National Standard (CNS) A4 specification (210 X 297 g t) ------------------ --Order --------- (Please read the precautions on the back before filling in this page) 486741 A7 ____B7____ V. Description of the invention (β) Joint section J) Shading of the given quantity. Fig. 7 is a cross-sectional view of the assembly of the fly-eye lens 14 and the patterned filter PF, and Fig. 8 is a side view of a part seen from the incident surface side. As shown in FIG. 7, the fly-eye lens 14 is held by silicone in a cylindrical metal member, and the incident surface side of the light beam B is covered by a cover glass 25. On the side of the incident surface side (+ Z side) of the metal member 24, rectangular support plates 26 and 27 which are in close contact with each other are projected in the + X direction and fixed. Further, on the + Z side of the support plate 26, the moving stage 29 is installed to move freely in the X direction through the wire guide 28. The support plates 26 and 27 are screwed and fixed from the + Z side by four fixing screws 32 as shown in FIG. 9. At this time, the fixing screws 32 are screwed to the support plate 26 through the through holes 27a formed in the support plate 27. Although not shown in the figure, the through hole 27a is a long hole formed extending in the Y direction. Of the four mounting positions of the fixing screw 32, two are located on the -X side, and the fixing screw 32 can be freely tightened / unfastened through the through hole 33 formed in the mobile table 29. Further, the support plates 26 and 27 are provided with a fine adjustment unit 34 for finely adjusting the relative positional relationship between the fly-eye lens 14 and the patterned filter PF in the Y direction. As shown in FIG. 10, the fine adjustment portion 34 is formed by a circular hole portion 35 (formed on the support plate 26) and a long hole portion 36 (formed on the support plate 27 extended in the X direction, and the width in the Y direction is only slightly Wider than the hole portion 35). The fine adjustment of the fine adjustment section 34 is performed using the positioning tool 44 shown in Fig. 11. The positioning tool 44 is formed with a fitting portion 44a which is rotatably fitted to the hole portion 35 at the front end; and an eccentric portion 44b which is opposite to the fitting portion 21 --------- ----------- Order --------- ^ 9 (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 486741 A7 ___ ^ ___ V. Description of the invention (V ") 44a is approximately the same diameter, and is eccentrically arranged at the base end side than the fitting portion 44a. Further, a through-hole 45 is formed in the moving stage 29, which is opened in the fine adjustment section 34 and is finely adjusted by the positioning tool 44. On the other hand, on the moving stage 29, a metal piece 30 having a substantially Z-shaped cross-section as shown in FIG. 8 is fitted to hold the patterned filter PF and is rotatable around the Z axis. It is fixed by the small fixing screw 32. At this time, the fixing screws 32 are screwed to the moving table 29 through three through holes 30a formed at equal intervals in the circumferential direction of the metal member 30. Each through hole 30a is an elongated hole extending in the circumferential direction (the direction around the Z axis). Further, the moving stage 29 and the metal member 30 are provided with a fine adjustment unit 46 for finely adjusting the relative positional relationship between the fly-eye lens 14 and the patterned filter PF in the 0 direction. As shown in FIG. 12, the fine adjustment portion 46 is formed by a circular hole portion 47 (formed on the mobile stage 29) and a long hole portion 48 (formed by the metal piece 30 extending in the X direction, and the width in the Y direction is only slightly Wider than the hole 47). The fine adjustment of the fine adjustment section 46 is performed using the positioning tool 50 shown in FIG. 11. The positioning tool 50 is formed with a fitting portion 50a which is rotatably fitted to the hole portion 47 at the front end, and an eccentric portion 50b which is approximately the same diameter as the fitting portion 50a and is relatively fitted. The part 50a is arrange | positioned eccentrically at a base end side. Further, an eccentric cam 52 integrally mounted on the rotating shaft 51a of the motor 51 on the moving stage 29 is engaged with the long hole portion 53. As shown in Fig. 13, the eccentric cam 52 has a circular shape in plan view, and is eccentrically mounted with respect to the rotation shaft 51a. The width in the X direction of the long hole portion 53 and the outer diameter of the eccentric cam 52 are approximately 22 ----------- 1 .------- tT --------- φ ( Please read the notes on the back before filling this page.) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 486741 A7-------------- V. Invention The description (V \) is the same 'and extends in the Y direction. The motor 51 and the eccentric cam 52 constitute a moving device for moving the patterned filter PF in the x direction. An encoder (not shown) is attached to the motor 51, and its rotation number is managed by the number of pulses from the zero position of the encoder. Furthermore, a compression spring 55 is provided on the moving-moving stage 29 through the shaft portion 54 to urge (stretch) the moving stage 29 in the + X direction. The control device Π monitors the position of the grating stage 4 in the χγ plane by the outputs from the laser interferometers 39a and 39b, and controls the grating stage driving unit 37 to move the grating stage 4 to a predetermined position, and The outputs of the laser interferometers 43a and 43b monitor the position of the substrate stage 5 in the XY plane, and control the substrate stage driving unit 40 to move the substrate stage 5 to a predetermined position. That is, the control device 17 controls the two driving units 37 and 40 while monitoring the positions of the grating stage 4 and the substrate stage 5 so that the photomask M and the glass substrate P are at an arbitrary scanning speed with respect to the projection system modules 3a to 3e ( Synchronous moving device) moves synchronously in the X direction. Furthermore, the control device 17 controls the rotation of the motor according to the pulse number of the encoder, thereby controlling the position of the patterned filter PF. In the exposure apparatus 1 configured as described above, the fly-eye lens 14 and the patterned filter PF must have high alignment accuracy within 0.1 mm, for example. The positioning is performed by aligning the registration mark AM of the patterned filter PF with the outer contour of the fly-eye lens 14 while looking at the microscope. Here, in order to fine-tune the position of the patterned filter PF in the Y direction, 23 (Please read the precautions on the back before filling this page) --------- Order · ------- I · This paper size is in accordance with Chinese National Standard (CNS) A4 (210 χ 297 mm) 486741 A7 ____B7 ____ V. Description of the invention (/) · The positioning tool 44 After the fitting portion is fitted into the hole portion 35 of the support plate 26 through the long hole portion 36 of the support plate 27 from the + Z side, the tool 44 is rotated around the Z axis. Since the eccentric portion 44b of the positioning tool 44 is eccentric with respect to the fitting portion 44a, as shown in FIG. 10, the outer peripheral surface of the positioning tool 44 is pressed against the support plate 27 in the + Y direction along with the rotation (when the rotation direction is opposite). Then -Y direction) movement. At this time, since the through hole 27a penetrating the support plate 27 of the fixing screw 32 is a long hole extending in the Y direction, the support plate 27 can smoothly move in the + Y direction (or -Y direction). Therefore, by adjusting the rotation amount of the positioning tool 44, the relative positional relationship of the support plate 27 with respect to the support plate 26 in the Y direction can be fine-tuned. The support plate 26 is integrally formed with the fly-eye lens 14 through the transmission 24, and the support plate 27 is integrally formed with the patterned filter PF in the Y direction through the wire guide 28, the mobile stage 29, and the metal member 30, and is positioned by use With the tool 44, fine adjustment of the relative positional relationship of the patterned filter PF with respect to the fly-eye lens 14 in the Y direction can be performed. After the alignment is completed, the fixing support plates 26 and 27 are fixed with the fixing screws 32. In addition, in order to fine-tune the position of the patterned filter PF in the 0 direction, the fitting portion 50a of the positioning tool 50 is allowed to pass through the long hole portion of the metal member 30 from the + Z side while the fixing screw 31 is loosened. 48 and fit behind the hole portion 47 of the moving table 29 'so that the tool 50 is rotated around the Z axis. Since the eccentric portion 50b of the positioning tool 50 is eccentric with respect to the fitting portion 50a, as shown in FIG. 12, the outer peripheral surface of the positioning tool 50 is pressed against the metal piece 30 in the counterclockwise rotation direction with rotation (when the rotation direction is opposite) In the case of clockwise direction) 24 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Order -------- -· 486741 A7 ^ __ B7___ V. Description of the Invention (Mobile) / Mobile. At this time, since the through-hole 30a penetrating the metal piece 30 of the fixing screw 31 is a long hole extending in the < 9 direction, the metal piece 30 can be smoothly moved in the +0 direction (or -Θ direction). Therefore, by adjusting the amount of rotation of the positioning tool 50, the relative positional relationship of the metal piece 30 with respect to the mobile stage 29 in the Θ direction can be fine-tuned. In other words, by using the positioning tool 50 in the fine adjustment section 46, fine adjustment of the relative positional relationship of the patterned filter PF with respect to the fly-eye lens 14 in the 0 direction can be performed. After the alignment is completed, the fixing stage 31 and the metal member 30 are fixed by the fixing screws 31. Next, the above-mentioned combined fly-eye lens 14, patterned filter PF, and the like are assembled to the lighting so that the light-shielding pattern SP of the patterned filter PF is located on the conjugate surface with the mask M of the fly-eye lens 14. System modules 10a ~ 10e. Next, the operation of the patterned filter PF by the driving of the motor 51 will be described. Although the eccentric cam 52 also rotates once the rotation shaft 51a of the motor 51 rotates, the eccentric cam 52 is eccentric with respect to the rotation shaft 51a ', and its outer peripheral surface is moved by pressing the moving table 29 in the X direction. For example, if the rotation axis 51a rotates clockwise from the position shown in FIG. 13, the mobile station 29 moves in the + X direction, and if the rotation axis 51a rotates counterclockwise, the mobile station 29 moves in the -Y direction. Therefore, by controlling the amount of rotation of the eccentric cam 52, the position in the X direction of the moving table 29 can be adjusted. That is, by driving the control motor 51, fine adjustment of the relative positional relationship of the patterned filter pF with respect to the fly-eye lens I4 in the X direction can be performed. In addition, during the adjustment of the position in the X direction of the mobile station 29, due to pressure. -------- ^ ---------. (Please read the precautions on the back before filling in this page) 25 486741 A7 B7 V. Description of the invention (Ά) / The spring 55 always urges the mobile station 29 in the + χ direction, so that even if there is a gap between the long hole portion 53 of the mobile station 29 and the eccentric cam 52, the mobile station 29 also It is always in contact with the -X side of the outer peripheral surface of the eccentric cam 52. Therefore, the moving stage 29 can follow the movement of the eccentric cam 52 in a stable manner and follow the movement in the X direction 'to prevent the unstable change in the relative positional relationship between the patterned filter PF and the fly-eye lens 14. Next, the order of adjusting the illuminance of the projection area PA on the glass substrate P by the exposure apparatus 1 configured as described above will be described. In the following, the drive system of the grating stage 4, the substrate stage 5, and the illumination shutter 12 of each of the lighting system modules 10a to 10e passes through the grating stage drive unit 37, the substrate stage drive unit 40, and the shutter drive unit 16. The individual driving is performed in accordance with the control device 17 for controlling the respective driving sections 37, 40, and 16. In addition, the rotation driving of the motor 51 is also performed according to the control of the control device 17. First, before the exposure process is performed, the glass substrate coated with the photoresist used for the actual exposure is subjected to test exposure in advance to measure the The illuminance difference (and uneven illuminance) between the adjusted rectangular portion T and the joint portion J. As this measurement method, it is better to use SEM (Scanning

Electron Microscope ;掃描型電子顯微鏡)等來量測在長方 形部T所曝光之圖案與以接合部j所曝光之圖案的線寬差 〇 其次，以對準系統49a，49b來量測光罩對準標記與基 板對準標記，求出光罩Μ與玻璃基板p的位偏量，由其結 果將光柵平台4或基板平台5加以微動進行對位，同時求 26 (請先閱讀背面之注意事項再填寫本頁)Electron Microscope (scanning electron microscope), etc. to measure the line width difference between the pattern exposed at the rectangular portion T and the pattern exposed at the junction j. Second, the alignment of the photomask is measured by the alignment systems 49a, 49b. The mark is aligned with the substrate, and the amount of misalignment between the mask M and the glass substrate p is obtained. From the result, the grating stage 4 or the substrate stage 5 is finely aligned to find 26. (Fill in this page)

--------訂 *-------I 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 2^公爱）_ 486741 A7 _______B7 _ 五、發明說明（/ ) 出各投影系統模組3a〜3e對於光罩Μ與玻璃基板P之相對 的位移、旋轉、掃描修正量，依據此修正量來進行各投影 系統模組3a〜3e之像位移機構、倍率調整機構、反射折射 型光學系統之修正。 接著，移動基板平台5，讓偵測器41位於各投影區域 PA依序量測照度，同時依據所量測之照度透過濾光器驅動 部22來驅動濾光器21，將各投影區域PA之照度調整到既 定値。又，此時，亦可不藉由偵測器41來量測照度，而是 事先求出以偵測器41、20所量測之照度差的對應關係，依 據由偵測器20所量測之照度而驅動濾光器21。 之後，讓偵測器41位於調節對象之投影區域PA，分 別量測長方形部T與接合部J之數處的照度來求出照度不 均。接著，驅動馬達51，讓圖案化濾光器PF在上述共軛 面內沿著X方向以既定量來漸漸移動，量測該時間之接合 部J的照度，求出各位置的照度不均。 此處，例如讓斷案化濾光器PF移動相當於小透鏡在 X方向之配置間距量，而將照度不均成爲最小時、亦即遮 光圖案SP位於圖5所示之中央位置時的編碼器之位置當 作零點位置來儲存。 接著，以此位置爲基準讓馬達51以既定量漸漸地旋轉 而移動圖案化濾光器PF。 藉此，如圖6所示，遮光圖案SP會將投影區域PA之 對應於接合部J的位置做部分的遮光。是以，受到遮光圖 案SP之作用的基板平台5上之區域，其照度降低而發生 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） __ --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 _______B7 ____一 五、發明說明（、> ) •"照度不均之情況。從而，採來自編碼器之零點位置的脈衝 數以馬達51之旋轉量來控制量測之照度不均落於規格値內 之圖案化濾光器PF的位置，則可將玻璃基板p上之投影 區域PA的照度不均設定於規格値。又，關於圖案化濾光 器PF之位置控制，藉由將馬達51以正弦(sin)狀的驅動來 加以驅動，則能以高線性度來驅動移動台29。 接著，對於其他之投影區域PA進行同樣的照度調節 之後，驅動光柵平台4與基板平台5，讓光罩Μ與玻璃基 板Ρ移動到掃描開始位置，使得光罩Μ與玻璃基板Ρ相對 於投影系統模組3a〜3e以同一速度、同一方向(例如-X方 向）來同步移動，藉此，光罩Μ之電路圖案在玻璃基板P 上一部分重複而受到曝光。 在本實施形態之曝光裝置與曝光方法，、由於可藉由圖 案化濾光器PF來任意地調節玻璃基板Ρ上之投影區域ΡΑ 中的接合部J之照度，即使於玻璃基板Ρ上讓光罩Μ之圖 案做一部分的重複而進行曝光，也可使得由長方形部τ所 曝光之區域與由接合部J所曝光之區域的光阻劑之化學反 應量相同。是以，以各部分所曝光之圖案彼此能以大致同 一線寬、同一形狀來形成，對於以任何曝光能量來曝光之 玻璃基板Ρ皆可抑制條斑的發生’防止元件之品質的降低 〇 又，在本實施形態中，由於依據偵測器41所檢測之照 度不均來對馬達·51做旋轉的控制，乃可迅速、輕易地調節 在接合部J之照度。再者，於上述之實施形態，由於是藉 28 --------^--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 486741 A7 ___— R7______ 五、發明說明（A) 由使用著馬達51與偏心凸輪52的簡單機構來實現圖案化 濾光器PF之移動，乃有助於裝置之小型輕質化、低價格 化。 (第2實施形態） 圖14乃至圖17所示係本發明之曝光裝置與曝光方法 的第2實施形態之圖。在這些圖中，與圖1〜圖13以及圖 22所示之第1實施形態的構成要素爲同一要素的部分係賦 予同一符號，而省略其說明。第2實施形態與上述第1實 施形態之相異之處在於，圖案化濾光器PF之遮光圖案SP 的構成以及控制裝置17之構成。 本實施形態之遮光圖案SP如圖14與圖15所示般， 係形成於複數之小透鏡的各接合部J，在X方向係以與小 透鏡之配置爲同一間距來配置，在Y方向係以與接合部J 同一之配置圖案來配置。又，各遮光圖案SP的大小，在 圖14所示之中央位置係自投影區域PA分開而並未遮光， 但在例如圖15所示之遮光位置則是將投影區域PA當中之 接合部J做既定量之遮光。 如圖16所示般，各遮光圖案SP係具有由圓弧61(中 心位於通過接合部J在Y方向之中心的直線60上)以及圓 弧62,62(與直線60以及圓弧61做交叉，相對於直線60呈 線對稱的配置)所圍成之大致銀杏狀的輪廓形狀。亦即，遮 光圖案SP爲具有自接合部J之中央(也包含鄰接之投影區 域PA)往長方形部T逐漸縮窄之輪廓形狀的圖案。又，圓 弧61、62做交叉的點在Y方向的位置，在圖中雖顯示分 29 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 -----------— R7_____ 五、發明說明（>?) 別自接合部J的-X方向側端緣的兩端往內側若干縮回的設 定情況’但也可配合輪廓而讓端部一致。又，此遮光圖案 SP的詳細形狀（圓弧61、62的直徑以及圓弧61、62的中 心位置)係依據與光阻劑之感光特性、重複曝光區域的曝光 做法等相應之後述的圖案像輪廓來加以設定，惟除了圓弧 以外，也可爲橢圓形狀或半橢圓形狀。 又，在本實施形態中，於控制裝置17係附設有未予圖 示之儲存裝置。.於此儲存裝置，係儲存著根據玻璃基板P 上所曝光之圖案的像輪廓而求出之圖案化濾光器PF與複 眼透鏡14的相對位置關係(具體而言爲儲存著遮光圖案SP 與投影區域PA之接合部j的相對位置關係）。其他的構成 則與上述第1實施形態相同。 在上述構成之曝光裝置中，於進行曝光處理之前先實 施測試曝光。若對其進一步加以詳述，則例如圖16(a)〜(c) 所示般，將遮光圖案SP做階段式的移動以使對於接合部J 之曝光量不同，然後在各位置將光罩Μ的圖案分別曝光於 玻璃基板Ρ。接著，將玻璃基板Ρ顯像後，以重合測定器 等之量測器來量測在接合部J所重複曝光之重複部的圖案 像之輪廓形狀以及在長方形部Τ所曝光之非重複部之圖案 像的輪廓形狀。 此處，當遮光圖案SP位於圖16(a)所示之位置時，於 玻璃基板Ρ上之投影區域ΡΑ中，如圖17(a)所示般，由於 遮光圖案SP並未將接合部J加以遮光，重複部之劑量a乃 與非重複布之劑量同樣爲100%。另一方面，如圖16(b)、 30 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 _B7_______ 五、發明說明（A ) (c)所示般，當遮光圖案SP將接合部J予以部分遮光的情 形，如圖17(b)、（c)所示般’在接合部J所重複曝光之重複 部的劑量b、c會相應於對接合部J之遮光量而減少。 此時，以劑量a來曝光之情形下，由於照度功率在Y 方向中央部多有變大的情況’如圖17(b)所示’曝光於玻璃 基板P之圖案像的輪廓之中’線寬相對於非重複曝光部分 會變細，如圖17(c)所示般’膜厚變薄。相反的’當遮光圖 案SP配置於圖16(c)所示之位置’以遮光量多的劑量c來 曝光之情形下’尤其是在Y方向中央部照度功率降低’是 以如圖17(b)所示般，曝光於玻璃基板Ρ之圖案像的輪廓之 中，線寬相對於非重複曝光部分會變粗’如圖17(e)所示般 ，膜厚變厚。 又，當遮光圖案SP配置於圖16(b)所示之適當位置， 對於非重複曝光部分劑量b低、但對於照度功率之光阻劑 的化學反應量爲同一狀態來曝光之情形，線寬與膜厚係成 爲與非重複曝光部分爲同一之像輪廓形狀。是以，乃算出 光阻劑之化學反應量在重複部與非重複部爲同一之遮光圖 案SP對於接合部J之相對位置關係(此時係圖16(b)所示之 位置)而儲存於儲存裝置。 又，在上述之測試曝光中，除了上述重複部與非重複 部之照度功率的調整以外，也量測出將劑量做階段性(例如 每次1%)變更之情況的線寬變化，求出將該等做關聯的函 數而儲存於儲存裝置中。 在本實施形態之曝光裝置以及曝光方法中，除了可得 31 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ' ' --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 ____B7___ 五、發明說明（β) / 到與上述第1實施形態同樣的效果外，由於遮光圖案SP 具有自接合部J的中央往長方形部Τ逐漸縮窄之輪廓形狀 ，即使於重複曝光部之中央以照度功率成爲最大的功率分 布來曝光，也可讓此曝光所致之化學反應量的分布成爲均 一，可曝光形成線寬與膜厚爲一定之圖案。又，在本實施 形態中，由於遮光圖案SP相對於複眼透鏡14之位置係依 據形成於玻璃基板Ρ上之圖案的像輪廓而求出，即使在曝 光處理中未算出遮光圖案SP的位置，也可將圖案化濾光 器PF迅速地移動到適當的位置，對於生產量之提昇做出 貢獻。 又，在上述實施形態中，由於遮光圖案SP可移動， 故於重複曝光之際，也可讓第1次曝光時與第2次曝光時 的遮光圖案SP之位置不同。又，也可僅於第1次之曝光 時以遮光圖案SP來將接合部J遮光，而於第2次曝光時則 讓遮光圖案SP自接合部J退出而不予遮光。 (第3實施形態）_ 圖18與圖19所示係本發明之曝光裝置與曝光方法之 第3實施形態之圖。在這些圖中，與圖14〜圖17所示之第 2實施形態的構成要素爲同一要素的部分係賦予同一符號 ’而省略其說明。第3實施形態與上述第2實施形態之相 異之處在於圖案化濾光器PF之構成。 亦即，在本實施形態中，如圖18(a)〜(c)所示般，在光 軸方向以積層狀態所配置之2片的石英玻璃板中係分別形 成有遮光圖案（遮光部）SP1、SP2(呈大致橢圓形狀）。該等 32 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂·-------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 __— ._B7____ 五、發明說明（Μ ) -/之遮光圖案SP係以位於光罩Μ與玻璃基板P之共軛面附 近的方式配置於複眼透鏡14之光源側，又短徑方向(Υ方 向）之中心線與接合部J之Υ方向的中心線60係一致，且 如圖18(a)所示般，遮光圖案SP1、SP2彼此重疊著。 又，各遮光圖案SP1、SP2係藉由未予圖示之驅動裝 置，以位於中心線60上之旋轉中心63爲中心而自由地繞 著Ζ軸(沿著共軛面)旋轉，如圖18(a)、(b)所示般，藉由調 整旋轉角以及位移量使長徑側之一端越過接合部J之-X側 的端緣而移動到將接合部J遮光之位置、或是如圖18(c)所 示般移動到不將接合部J遮光之位置。又，由圖18(a)、（b) 可明顯地看出，接合部J係由遮光圖案SP1、SP2之雙方 所遮光，該遮光區域之形狀係依據遮光圖案SP1、SP2之 旋轉角而做非線性的變形。此時，遮光區域的形狀也是分 別設定成具有良接合部J的中央（也包含鄰接之投影區域 PA)往長方形部T逐漸縮窄之輪廓，在Y方向位於接合部J 之若干內側。又，遮光區域之形狀雖顯示於Y方向位於接 合部J之若干內側，惟亦可配合形狀之輪廓讓端部一致。 其他的構成則與上述第2實施形態相同。 在上述構成之曝光裝置中，也於進行曝光處理之前先 實施測試曝光。例如將遮光圖案SP1、SP2做階段式的旋 轉，而定位於圖18(a)〜(c)所示之位置。藉此，如圖 19(a)〜(c)所示，揆影區域PA內之接合部J依據遮光圖案 SP1、SP2之旋轉角而分別受到遮光。又，在對於接合部j 之遮光量不同之各位置將光罩Μ的圖案分別曝光於玻璃基 33 本纸張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公愛） --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 ^______B7 _ 五、發明說明（β ). /板P。之後，與第2實施形態同樣，將玻璃基板P顯像後 ，以重合測定器等之量測器來量測在接合部J所重複曝光 之重複部的圖案像之輪廓形狀以及在長方形部T所曝光之 非重複部之圖案像的輪廓形狀。 接著，如圖17所示，算出照度功率在重複部與非重複 部爲同一之遮光圖案SP1、SP2對於接合部J之形狀(例如 圖19(b)所示之位置)或遮光圖案SP1、SP2之各位置(旋轉 角+位移量）而儲存於儲存裝置中，於實行曝光處理時則讀 出儲存於儲存裝置之遮光圖案SP1、SP2的適切形狀(旋轉 角+位移量），從而控制驅動裝置。藉此，遮光圖案SP1、 SP2所形成之遮光區域相對於接合部J會變形爲圖18(b)所 示之形狀，對於玻璃基板P係以重複部之像輪廓形狀與非 重複部之像輪廓形狀一致之曝光所致之化學反應量來曝光 圖案，而可達成與上述第2實施形態同樣的效果。 又，在本實施形態中，也可讓第1次曝光時與第2次 曝光時的遮光匱案SP1、SP2之旋轉角不同。又，也可僅 於第1次之曝光時以遮光圖案SP1、SP2來將接合部J遮 光，而於第2次曝光時則讓遮光圖案SP1、SP2自接合部J 退出而不予遮光。又，作爲將遮光區域變形的構成，並不 限於上述實施形態，而可採用其他構成。 又，在上述實施形態中，作爲光學積分器雖使用複眼 透鏡，但並不限於此，也可採用內面反射型之棒狀透鏡。 此時’只要將圖案化濾光器PF設於棒狀透鏡之射出側即 可。又，讓圖案化濾光器PF在共軛面內移動之移動裝置 34 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 _______B7____ 玉、發明說明（V]) /雖使用馬達51與偏心凸輪52，但不限於此，以可採用例 如壓電元件等之其他構成。 又，在上述實施形態中，雖以圖案化濾光器PF僅調 節了重複曝光部分之照度，惟並不限於此，例如也可另外 設置具有遮光圖案（對應於非重複曝光部分）之圖案化濾光 器，當重複曝光部分之照度大的時候，以上述之方法讓此 部份之照度降低；相反地，當非重複曝光部分之照度較重 複曝光部分之照度爲大時，也可僅降低非重複曝光部分之 照度。再者，雖讓遮光圖案SP對應於複眼透鏡14之全部 的小透鏡來配置，但亦可對應於一部分之小透鏡來配置。 此時，照度降低之量雖減少，但只要進行可彌補減少量的 遮光即可。 又，在上述實施形態中，雖採用讓投影區域PA之一 部分彼此重複之複數的投影系統模組3a〜3e、也就是複透 鏡式之例來說明，但並不限於此，例如也可如圖20所示般 ，使用具有單一之投影區域PA的投影系統模組(投影光學 系統），而於第1圖案56與第2圖案57在重複部58重複 之對LCD圖案LD進行掃描曝光之際適用之。此時，在第 1曝光讓第1圖案掃描曝光之後，使得光柵平台4往Y方 向步進移動來調整對於光罩Μ之照明區域的位置，且使得 基板平台5往Υ方向步進移動來調整在玻璃基板Ρ上之投 影區域的位置，在第2曝光讓第2圖案掃描曝光，此時， 以相同於上述之方法，在曝光處理前調節接合部J之照度 ，則可讓施於玻璃基板Ρ上之重複部58之光阻劑的化學反 35 ^張尺度適用中國國家標準（CNS)A4規格（210 X 297公Θ 一 ---I----訂--------I (請先閱讀背面之注意事項再填寫本頁) 486741 A7 _____B7 _____ 五、發明說明（) 應量與其他部分之化學反應量相同，可得到沒有條斑之良 好品質的液晶顯示元件。 又，作爲本實施形態之基板，不僅可使用液晶顯示元 件用之玻璃基板P，尙可使用半導體元件用之半導體晶圓 、薄膜磁頭用之陶瓷晶圓、或者是曝光裝置所採用之光罩 或光柵之原版(合成石英、矽晶圓)等。 以曝光裝置1之種類而言’不僅限於將液晶顯示元件 圖案曝光於玻璃基板P之液晶顯示元件製造用之曝光裝置 ，尙可廣泛地使用將半導體元件圖案曝光至晶圓的半導體 元件製造用之曝光裝置、薄膜磁頭、攝像元件（CCD)或者 是用以製造光柵之曝光裝置等。 又，作爲光源6，可使用由超高壓水銀燈所產生之亮 線(g 線(436nm)、h 線(404.7nm)、i 線(365nm))、KrF 準分 子雷射（248nm)、ArF準分子雷射（193nm)、以及F2雷射 (157nm) 〇 投影系統模組3a〜3e之倍率可爲等倍率系統或縮小系 統乃至放大系統。又，作爲投影系統模組3a〜3e，於使用 準分子雷射等之遠紫外線的情形，其玻璃材係採用石英或 螢石等之可通過遠紫外線的材料，在使用F2雷射或X射線 時只要採用反射折射系統或是反射系統用之光學系統(光罩 Μ也採用反射型類型）。又，亦可採用不具投影系統模組 3a〜3e而是讓光罩Μ與玻璃基板ρ密接來進行光罩Μ之圖 案的曝光之近接曝光裝置。 在基板平台5與光柵平台4使用線性馬達 36 Ϊ紙張尺度適用_中國國家標準（CNS)A4規格（21〇了^^--------- --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 486741 A7 -------B7___ 五、發明說明（β ) (USP5,623,853或USP5,528，118)之情況，可採用：使用空 氣軸承之氣浮型以及使用羅倫茲(Lorentz)力或是電抗力之 磁浮型之任一者。又，各平台4、5可爲沿著引導件移動之 型式、也可爲不設引導件之無引導件型式。 作爲各平台4、5之驅動機構3 7、40，可使用平面馬 達’其讓以二維空間配置著磁石之磁石單元（永久磁石）、 以一維空間配置著線圏之電樞單元對向而藉由電磁力將各 平台4、5加以驅動。 此時，只要將磁石單元與電樞單元之其中一者連接於 平台4、5，而將磁石單元與電樞單元之另一者設置於各平 台4、5之移動面側(基座）。 因基板平台5之移動所產生之反作用力，亦可如曰本 專利特開平8-166475號公報(USP5,528，118)所記載般，以 不致傳達到投影光學系統3的方式，藉框構件而機械性地 離開地面（大地）。本發明亦可採用具備上述構造之曝光裝 置。 - 因光罩平台4之移動所產生之反作用力，亦可如曰本 專利特開平8-33.0224號公報(US S/N 08/416,558)所記載般 ’以不致傳達到投影光學系統3的方式，藉框構件而機械 性地離開地面（大地）。本發明亦可採用具備上述構造之曝 光裝置。 如以上所述’本案實施形態之曝光裝置1，係讓含有 本案申請專利範圍所舉出之各構成要素的各種子系統，在 保持既定之機械精度、電氣精度、光學精度的方式，加以 37 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----訂------ i. 486741 A7 ---------B7 ____ _ 五、發明說明（诈） 組裝而製造。爲了確保各種精度，於該組裝之前後，係對 於各種光學系統進行可達成光學精度之調整，對於各種機 械系統係進行可達成機械精度之調整’對於各種電氣系統 係進行可達成電氣精度之調整。將各種子系統組裝到曝光 裝置之製程，係包含各種子系統彼此之機械性連接、電氣 電路之配線連接、氣壓管路之配管連接等。在將各種子系 統組裝到曝光裝置之製程之前’當然也有各子系統個別之 組裝製程。當各種子系統組裝到曝光裝置之製程結束後’ 乃進行總合調整，確保曝光裝置全體之各種精度。又’曝 光裝置之製造在溫度與潔淨度受到管理之真空室來進行爲 佳。 液晶顯示元件與半導體元件等之元件係如圖21所示般 ，經由以下步驟來製造。亦即’進行液晶顯示元件等之機 能•性能設計之步驟201、依據該設計步驟而製作光罩M( 光柵)之步驟202、由石英等來製作玻璃基板P或是由矽材 料來製作晶圓之步驟203、藉前述之實施形態的掃描型曝 光裝置1將光罩Μ之圖案曝光於玻璃基板P(或晶圓）之步 驟204、將液晶顯示元件等加以組合之步驟(晶圓之情形’ 則包含切割製程、打線製程、封裝製程）2〇5、檢查步驟 206 等。 (第4實施形態） 圖23所示係有關第4實施形態之投影曝光裝置之槪略 構成圖，此投影曝光裝置係步進•掃描方式之縫合型投影 曝光裝置。又，在以下之說明中，係參照圖23所示之 38 --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ____B7_ 五、發明說明（^ ) XYZ直交座標系來說明各構件之位置關係。此XYZ座標 系，X軸與Z軸係設定成平行於紙面，Y軸係設定成相對 於紙面呈垂直的方向。圖中之XYZ座標系實際上XY平面 係設定成與水平面呈平行之面，Z軸係設定成鉛直向下方 向（重力方向）。 於圖23中·，光源111係供給g線(波長：436mn)、h 線（波長：404nm)、i線(波長365mn)等之曝光用光的超高 壓水銀燈。該光源111係定位於橢圓鏡112之第一焦點位 置附近，來自光源111之光係聚光於橢圓鏡112之第二焦 點位置，於該處形成光源像。 在該光源像形成位置之附近係設有用以進行曝光用光( 照明光)之ΟΝ/OFF的光閘113。來自光源像之光在通過輸 入透鏡群1H(前側焦點係定位於光源像形成位置附近)而轉 換爲大致平行光束。在此平行光束中，係配置有後述之圖 案化濾光器115。 通過圖案化濾光器115之光係入射於複眼透鏡116(將 複數之棒狀透鏡元件集積成2維矩陣狀所形成者）。在此複 眼透鏡116之射出面附近係形成有由各個棒狀透鏡元件所 聚光而成之光源像的集合體、也就是面光源(2次光源）。於 該面光源形成位置係配置著具有既定之開口徑的照明開口 光闌(未予圖示）。 來自2次光源之光係由聚光透鏡系統117(前側焦點係 定位於2次光源形成位置附近)所聚光，重疊性照明光罩Μ 上之照明區域。又，在圖23之例子，係省略了光路折射鏡 39 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ^^1 n —ϋ n n n —Hi · n n 11 aMmam MIBW n I # 486741 A7 ____B7__ 五、發明說明（β ) · 之圖示。 由以上之照明光學系統（111〜117)所照明之光罩Μ上 的電路圖案所來的光係通過投影光學系統PL而到達表面 塗佈有感光性材料之工件W，在工件W上形成投影光學系 統PL所形成之電路圖案像。於本實施形態中，投影光學 系統PL係具有第1成像系統PLa(讓光罩μ之中間像形成 於中間像形成位置)與第2成像系統PLb(讓前述中間像於 工件W上再成像）。如上述般投影光學系統pl係讓光罩Μ 之正立正像(在X方向與Υ方向之橫向倍率皆爲正之像)形 成於工件W上之投影區域內。 又，保持著光罩Μ之光罩平台^48在乂¥平面內係設 置成可動，保持著工件W之工件平台WS在ΧΥ平面內係 設置成可動並可調整工件W在Ζ方向之位置以及相對於Ζ 軸之傾斜程度。 圖24所示係工件W上之曝光區域與投影光學系統PL 所形成之投影區域的關係之俯視圖，以下參照此圖24與前 述之圖23來簡單地說明本實施形態之曝光動作。 又，在本實施形態中，在光罩Μ之附近以及中間像形 成位置IP之至少一者的位置處係配置著用以將投影區域 PA之形狀設定成梯形狀之視野光闌。 首先，投影光學系統所形成之投影區域PA係定位於 工件W上之-X方向的端部、+Y方向之端部。之後，開啓 光閘113讓光罩Μ與工件W相對於投影光學系統PL移動 於X方向。此時，光罩Μ與工件W之速度比係與投影光 40 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ---------訂---------， 486741 五、發明說明) 學系統PL之倍率(例如+ 1倍)爲相同之比。藉由此動作， 由工件W上區域141與區域142所構成之曝光區域EA1 受到曝光。 對曝光區域EA1之曝光結束後，乃關閉光閘113，讓 光罩Μ與工件W相對於投影光學系統PL往-Y方向步進 移動既定之步進量。之後，再次開啓光閘Π3，讓光罩Μ 與工件W相對於投影光學系統PL往-X方向移動。藉由此 動作，由工件W上區域142、區域143以及區域144所構 成之曝光區域EA2受到曝光。 對曝光區域EA2之曝光結束後，乃關閉光閘113 ’讓 光罩Μ與工件W相對於投影光學系統PL往-Y方向步進 移動既定之步進量。之後，再次開啓光閘Π3，讓光罩Μ 與工件W相對於投影光學系統PL往+Χ方向移動。藉由此 動作，由工件W上區域145 '區域146以及區域147所構 成之曝光區域EA3受到曝光。如此般，在本實施形態，可 得到較投影光學系統之投影區域PA爲大之曝光區域。 又，在圖24中係顯示對曝光區域EA3之曝光中途之投影 區域PA。 此處，區域142、區域144以及區域146係分別進行 兩次曝光之重複曝光區域，區域141、區域143以及區域 145係非重複曝光區域。 此處，梯形狀之投影區域PA可分成長方形狀之區域 與位於該長方形狀之長邊方向之兩端部的兩個三角形狀之 區域來考慮。在本實施形態’藉長方形狀之區域來曝光非 41 ^^尺度適用中國國家標準（CNS)A4規格（21〇x 297公爱1 " (請先閱讀背面之注意事項再填寫本頁) -Lf 訂---------. 486741 A7 _____；_B7___ 五、發明說明（Ι>ύ ) 重複曝光區域141，143以及145，藉由三角形狀之區域來曝 光重複曝光區域142，144以及146，而上述之步進量(往γ 方向之移動量)乃基於此而決定。 再者’在本實施形態中，作爲將對於重複曝光區域 142，144以及146之曝光量加以連續變更之設定機構（圖案 化濾光器115)係配置於複眼透鏡116之入射面附近之位置 。複眼透鏡116之入射面附近的位置係與來自複眼透鏡所 形成之複數的光源像的能束之光路分別對應之複數的光路 中與工件W成光學性共軛之位置。 圖25所示係作爲設定機構之圖案化濾光器115的俯 視圖。又，圖25也一倂顯示構成複眼透鏡116之複數之要 素透鏡(棒狀透鏡兀件)之入射面116a。 如圖25所示，本實施形態之圖案化瀘光器115之形 成係例如在由玻璃基板所構成之光透過性基材115a上以蒸 鍍等做法來設置鉻等之複數的遮光圖案115b。回到圖23， 該圖案化濾光器115係以可藉由濾光器驅動部121往圖中 X方向（與掃描方向對應之方向）做微量的連續移動之方式 所設置者。 又，於圖案化濾光器115之光透過性基材U5a上所設 之圖案並不限於遮光圖案，亦可爲衰光圖案。作爲該衰光 圖案可使用例如隨意排列之微小遮光部。 其次，參照圖26來說明投影區域PA與圖案化濾光器 115之遮光圖案115b的位置關係。又，在圖26，在複眼透 鏡116之各要素透鏡之入射面116a之位置係顯不對應於投 42 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裳--------訂------^----· 486741 A7 B7 五、發明說明（ι>丨） / 影區域PA之區域PAI(此區域PAI之像在投影區域PA呈 一對一對應）。又，圖26(A)係由遮光圖案115b所遮光之狀 態，圖26(B)係由遮光圖案所遮光之狀態。 在圖26中，對應於投影區域PA之入射面116a上之 區域PAI係具有上邊151、下邊152以及兩個斜邊153，154 之梯形狀，且具有與圖24所示之非重複區域141，143，145 對應之長方形狀之子區域155、與重複區域142，144，146對 應之兩個直角三角形狀之子區域156，157。又，在圖26雖 僅顯示與一個要素透鏡之入射面116a之關連部分，但實際 上在複眼透鏡116之各入射面皆有上述關係之成立。 又，在圖26中係顯示於基座115a上所形成之複數的 遮光圖案115b當中四個遮光圖案115bl〜115b4。此處，與 圖26中之區域PAI對應者爲兩個遮光圖案Il5bl，115b2， 兩個遮光圖案115bl，115b2彼此爲鏡像的關係，所以此處 僅就遮光圖案115bl來說明。 遮光圖案115bl係與區域PAI之圖中右側(+Y方向側） 之子區域156對應配置，爲具有六個邊251〜256之六角形 狀。此處，遮光圖案115bl之上邊251係與區域PAI之下 邊152平行來定位。又，遮光圖案115M之圖中左側(-Y 方向側)之兩個斜邊252,253所形成之頂點257在Y軸之位 置係定位於子區域155與子區域156的交界線的延長線之 附近。又，上邊251與斜邊252所形成之頂點258在Y軸 之位置係定位於通過斜邊153之中點之底邊152之垂線(此 垂線係成爲子區域156之底邊（152)之二等分線）的延長線 43 本纸張尺度適財關家標準（CNS)A4規格（21G X 297公度） (請先閱讀背面之注意事項再填寫本頁) ----II — I ^ 0 I----I--* 486741 A7 ____—___B7___ 五、發明說明（^) 上。 又，遮光圖案115bl之下側(-X方向側）之斜邊253於 圖26(A)所示之狀態（非遮光狀態)下，係以不致與區域PAI 之下側的要素透鏡之入射面上的投影區域PA所對應之區 域(未予圖示)干涉的方式來決定。此事可從圖26(A)之區域 PAI的斜邊153與遮光圖案115b3之斜邊的位置關係來理 解。又，遮光圖案115M之斜邊255於圖26(A)之非遮光 狀態下，係以不致與區域PAI之右斜下側的要素透鏡之入 射面上的投影區域PA所對應之區域干涉的方式來決定。 此事可從圖26(A)之區域PAI的斜邊154與遮光圖案115b4 的位置關係來理解。 又，於圖25中當圖案化濾光器115往+X方向側移動 之時，如圖26(B)所示，遮光圖案115bl，115b2之上邊251 與斜邊252會將區域PAI之子區域156(157)之一部分做遮 光。由於在複數之要素透鏡的各入射面上受到同樣的遮光 ，與投影區域PA之重複區域對應之區域乃受到遮光。 圖27(A)顯示使用上述受到部分遮光之投影區域在工 件W上進行掃描曝光之情形下的曝光量分布。又’爲便於 說明起見，圖27(A)，(B)之曝光量分布係顯示使用空白（無 圖案)之光罩Μ之情形。 於圖27(A).中，實線係受到遮光之情形下的曝光量分 布，虛線係未受到遮光之情形下之曝光量分布。此處’區 域71之曝光量係顯示圖24之非重複區域之曝光量，區域 72,73之曝光量係顯示圖24之重複區域之經過1次掃描曝 44 (請先閱讀背面之注意事項再填寫本頁) · I I — III I · I I--I I I . 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ______B7______ 五、發明說明（0 ) 光的曝光量。如以圖24所說明般，由於重複區域進行過2 次掃描曝光’於經過2次之掃描曝光後之曝光量分布乃成 爲圖27(B)所示般。 於圖27(B)中，區域74係與經過2次掃描曝光之重複 區域對應，區域75,76係與非重複區域對應。不變更非重 複區域之曝光量而僅改變重複區域之曝光量的做法可由圖 27(B)來理解。亦即，在本實施形態中，藉由作爲設定機構 之圖案化濾光器115的移動可將非重複區域之曝光量與重 複區域之曝光量獨立來控制。 由於如圖23所述般圖案化濾光器Π5在X方向之位 置係連續地變更，所以在圖26(B)之遮光區域(陰影部分)的 面積亦連續地變更。從而，可理解圖27(B)所示之重複區 域74的曝光量也連續地變更。 如本實施形態般，即使於複眼透鏡116之入射面的附 近配置圖案化濾光器115、亦即複眼透鏡116所形成之複 數的光源像分別所對應之複數的光路中之與工件W呈大致 共軛的位置分別配置複數的遮光圖案115b，複眼透鏡116 於其射出面（照明系統之瞳)所形成之複數的光源像所構成 之2次光源(面光源）的巨視形狀也不會變化。是以，可在 不致喪失遠光性的情形下進行曝光量之調整。 其次，簡單說明作爲設定機構之圖案化濾光器115的 調整動作。 首先，對於塗佈有感光性材料(光阻劑）之工件W，將 曝光量做階段式的變更來進行複數次之測試曝光。之後， 45 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---------------- Order * ------- I This paper size applies to China National Standard (CNS) A4 (210 X 2 ^ Public Love) _ 486741 A7 _______B7 _ V. Description of the invention (/) The relative displacements, rotations, and scanning corrections of the projection system modules 3a to 3e with respect to the mask M and the glass substrate P are obtained, and the image displacement mechanism and magnification adjustment mechanism of each projection system modules 3a to 3e are performed based on the corrections. 2. Correction of reflective optical system. Next, the substrate platform 5 is moved, and the detector 41 is located in each projection area PA to sequentially measure the illuminance, and at the same time, the filter 21 is driven by the filter driving unit 22 according to the measured illuminance, and The illuminance is adjusted to a predetermined level. At this time, instead of measuring the illuminance by the detector 41, the correspondence relationship between the illuminance differences measured by the detectors 41 and 20 can be obtained in advance, and based on the measured by the detector 20, The illuminance drives the filter 21. After that, the detector 41 is positioned in the projection area PA of the adjustment target, and the illuminances at the number of the rectangular portion T and the number of the joint portions J are measured to obtain the uneven illuminance. Next, the motor 51 is driven to gradually move the patterned filter PF in the conjugate plane along the X direction by a predetermined amount, and the illuminance of the joint portion J at that time is measured to determine the uneven illuminance at each position. Here, for example, moving the case-separating filter PF is equivalent to the amount of arrangement of the small lenses in the X direction, and the encoder is configured to minimize illumination unevenness, that is, when the light-shielding pattern SP is located at the center position shown in FIG. 5. The position is stored as the zero position. Next, based on this position, the motor 51 is caused to gradually rotate at a predetermined amount to move the patterning filter PF. Thereby, as shown in FIG. 6, the light shielding pattern SP partially shields the position of the projection area PA corresponding to the joint portion J. Therefore, the area on the substrate platform 5 affected by the light-shielding pattern SP decreases in illuminance and 27 occurrences This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) __ ------- -Order --------- (Please read the precautions on the back before filling this page) 486741 A7 _______B7 ____15. Description of the invention (, >) • " Uneven illumination. Therefore, the number of pulses from the zero position of the encoder is used to control the position of the patterned filter PF where the measured illuminance unevenness falls within the specification by using the amount of rotation of the motor 51, so that the projection on the glass substrate p can be projected The illuminance unevenness of the area PA is set to the specification 値. Regarding the position control of the patterned filter PF, by driving the motor 51 in a sinusoidal shape, the mobile stage 29 can be driven with high linearity. Next, after performing the same illuminance adjustment on the other projection areas PA, the grating stage 4 and the substrate stage 5 are driven to move the photomask M and the glass substrate P to the scanning start position, so that the photomask M and the glass substrate P are relative to the projection system. The modules 3a to 3e move synchronously at the same speed and in the same direction (for example, the -X direction), whereby the circuit pattern of the photomask M is partially repeated on the glass substrate P and exposed. In the exposure apparatus and exposure method of this embodiment, the illuminance of the joint portion J in the projection area PA on the glass substrate P can be arbitrarily adjusted by the patterned filter PF, so that light is allowed to be even on the glass substrate P. The pattern of the mask M is partially repeated for exposure, and the chemical reaction amount of the photoresist in the area exposed by the rectangular portion τ and the area exposed by the joint portion J can also be made the same. Therefore, the patterns exposed by the respective parts can be formed with approximately the same line width and the same shape, and the occurrence of streaks can be suppressed for the glass substrate P exposed with any exposure energy. In this embodiment, since the rotation of the motor · 51 is controlled based on the uneven illumination intensity detected by the detector 41, the illumination intensity at the joint portion J can be adjusted quickly and easily. Moreover, in the above-mentioned implementation form, because it is borrowed from 28 -------- ^ --------- (Please read the precautions on the back before filling this page) This paper size is applicable to China Standard (CNS) A4 specification (210 X 297 public love) 486741 A7 ___— R7______ V. Description of the invention (A) The movement of the patterned filter PF is realized by a simple mechanism using a motor 51 and an eccentric cam 52. Helps reduce the size, weight, and price of the device. (Second Embodiment) Figs. 14 to 17 are views showing a second embodiment of the exposure apparatus and exposure method of the present invention. In these figures, parts that are the same as the constituent elements of the first embodiment shown in Figs. 1 to 13 and 22 are given the same reference numerals, and descriptions thereof are omitted. The second embodiment is different from the first embodiment in the configuration of the light shielding pattern SP of the patterned filter PF and the configuration of the control device 17. As shown in FIGS. 14 and 15, the light-shielding pattern SP of this embodiment is formed at each joint portion J of a plurality of small lenses, and is arranged at the same pitch as that of the small lenses in the X direction and in the Y direction. They are arranged in the same arrangement pattern as the joint portion J. In addition, the size of each light-shielding pattern SP is separated from the projection area PA in the center position shown in FIG. 14 and is not light-shielded. However, in the light-shielding position shown in FIG. The given amount of shading. As shown in FIG. 16, each light-shielding pattern SP has an arc 61 (centered on a straight line 60 passing through the joint J in the center of the Y direction) and arcs 62 and 62 (intersecting the straight line 60 and the arc 61). A substantially ginkgo-shaped outline surrounded by a line-symmetrical arrangement with respect to the straight line 60). That is, the light-shielding pattern SP is a pattern having a contour shape that gradually narrows from the center of the joint portion J (including the adjacent projection area PA) toward the rectangular portion T. In addition, the positions of the intersections of the arcs 61 and 62 in the Y direction are shown in the figure. Although the paper is divided into 29 paper sizes, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable. ------- ------------- Order --------- (Please read the notes on the back before filling this page) 486741 A7 -----------— R7_____ 5. Description of the invention (>?) Do not retract from the ends of the -X-direction side edge of the joint J to the inside, but you can also match the contour to make the ends consistent. The detailed shape of the light-shielding pattern SP (the diameters of the arcs 61 and 62 and the center positions of the arcs 61 and 62) is based on the pattern image described later according to the photosensitive characteristics of the photoresist and the exposure method of the repeated exposure area. The contour is set, but in addition to the arc, it can also be oval or semi-elliptical. In this embodiment, a storage device (not shown) is attached to the control device 17. . The storage device stores the relative positional relationship between the patterned filter PF and the fly-eye lens 14 obtained from the image contour of the pattern exposed on the glass substrate P (specifically, the light-shielding pattern SP and the projection are stored). The relative positional relationship of the joint portion j in the area PA). The other structures are the same as those of the first embodiment. In the exposure apparatus configured as described above, the test exposure is performed before the exposure processing. For further details, for example, as shown in FIGS. 16 (a) to (c), the light-shielding pattern SP is moved stepwise so that the exposure amount to the joint portion J is different, and then the mask is placed at each position. The patterns of M are exposed on a glass substrate P, respectively. Next, after developing the glass substrate P, the outline shape of the pattern image of the repeated portion repeatedly exposed at the joint portion J and the non-repeated portion exposed at the rectangular portion T are measured with a measuring device such as a coincidence measuring device. The outline shape of the pattern. Here, when the light-shielding pattern SP is located at the position shown in FIG. 16 (a), in the projection area PA on the glass substrate P, as shown in FIG. 17 (a), since the light-shielding pattern SP does not bind the joint portion J With shading, the dose a of the repeating part is 100% the same as that of the non-repeating cloth. On the other hand, as shown in Figure 16 (b), 30 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) -------- Order --------- (Please read the precautions on the back before filling this page) 486741 A7 _B7_______ V. Description of Invention (A) (c) As shown in Figure 17 (b), when the light-shielding pattern SP partially shields the joint J, as shown in Figure 17 (b) As shown in (c), the doses b and c of the repeating part repeatedly exposed at the joint J will decrease according to the amount of light shielding of the joint J. At this time, in the case of exposure with the dose a, the illuminance power may increase in the central part of the Y direction. As shown in FIG. 17 (b), the line is exposed to the outline of the pattern image of the glass substrate P. The width becomes thinner than the non-repeatedly exposed portion, and the film thickness becomes thinner as shown in FIG. 17 (c). On the contrary, "When the light-shielding pattern SP is arranged at the position shown in Fig. 16 (c)" in the case of exposing with a large amount of light-shielding dose c, "especially the illuminance power decreases in the central part of the Y direction" As shown in Figure), when exposed to the outline of the pattern image of the glass substrate P, the line width becomes thicker than the non-repeatedly exposed portion. As shown in FIG. 17 (e), the film thickness becomes thicker. In addition, when the light-shielding pattern SP is arranged at an appropriate position shown in FIG. 16 (b), for a case where the dose b is low for a non-repeated exposure portion, but the chemical reaction amount of the photoresist for illuminance power is the same state for exposure, the line width The thickness of the film is the same as that of the non-repeatedly exposed portion. Therefore, the relative positional relationship between the light-shielding pattern SP with which the chemical reaction amount of the photoresist is the same in the repeating portion and the non-repeating portion with respect to the joint portion J (in this case, the position shown in FIG. 16 (b)) is stored in Storage device. In addition, in the above-mentioned test exposure, in addition to the adjustment of the illuminance power of the repeating portion and the non-repeating portion, the line width change in the case where the dose is changed stepwise (for example, 1% each time) is measured and calculated. These are stored as associated functions in a storage device. In the exposure device and exposure method of this embodiment, in addition to 31 paper sizes, the Chinese national standard (CNS) A4 specification (210 X 297 mm) is applicable. '' -------- Order ---- ----- (Please read the precautions on the back before filling in this page) 486741 A7 ____B7___ 5. Explanation of the invention (β) / In addition to the same effect as the first embodiment, the light-shielding pattern SP has a self-joining portion J The shape of the outline gradually narrows toward the rectangular portion T, and even if the exposure is performed at the center of the repeated exposure portion with the power distribution with the maximum illuminance power, the distribution of the amount of chemical reaction caused by this exposure can be made uniform and can be formed by exposure Line width and film thickness are fixed patterns. In this embodiment, since the position of the light-shielding pattern SP relative to the fly-eye lens 14 is determined based on the image contour of the pattern formed on the glass substrate P, even if the position of the light-shielding pattern SP is not calculated during the exposure process, The patterned filter PF can be quickly moved to an appropriate position, which contributes to an increase in throughput. Further, in the above-mentioned embodiment, since the light-shielding pattern SP is movable, the position of the light-shielding pattern SP at the time of the first exposure and the time of the second exposure may be different when the exposure is repeated. Alternatively, the joint portion J may be shielded with the light-shielding pattern SP only at the first exposure, and the light-shielding pattern SP may be withdrawn from the joint portion J without being shielded at the second exposure. (Third Embodiment) Figs. 18 and 19 are diagrams showing a third embodiment of the exposure apparatus and exposure method of the present invention. In these figures, parts that are the same as the constituent elements of the second embodiment shown in Figs. 14 to 17 are given the same reference numerals and their descriptions are omitted. The difference between the third embodiment and the second embodiment is the structure of the patterned filter PF. That is, in this embodiment, as shown in FIGS. 18 (a) to (c), two light-shielding patterns (light-shielding portions) are formed in the two quartz glass plates arranged in a laminated state in the optical axis direction. SP1, SP2 (approximately oval shape). These 32 paper sizes are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) -------- Order · -------- (Please read the precautions on the back before (Fill in this page) 486741 A7 __—. _B7____ 5. Description of the Invention (Μ)-/ The light-shielding pattern SP is arranged near the conjugate surface of the mask M and the glass substrate P on the light source side of the fly-eye lens 14 and the center of the short-axis direction (方向 direction). The line coincides with the center line 60 in the Υ direction of the joint J, and as shown in FIG. 18 (a), the light-shielding patterns SP1 and SP2 overlap each other. In addition, each of the light-shielding patterns SP1 and SP2 is freely rotated around the Z axis (along the conjugate plane) around a rotation center 63 located on the center line 60 by a driving device (not shown), as shown in FIG. 18 As shown in (a) and (b), by adjusting the rotation angle and the displacement, one end of the long-diameter side moves beyond the end edge of the -X side of the joint portion J to a position where the joint portion J is shielded, or As shown in FIG. 18 (c), it is moved to a position where the joint portion J is not shielded from light. 18 (a) and 18 (b), it can be clearly seen that the joint portion J is shielded by both the light-shielding patterns SP1 and SP2, and the shape of the light-shielding region is made according to the rotation angles of the light-shielding patterns SP1 and SP2. Non-linear deformation. At this time, the shape of the light-shielding region is also set so that the center of the good joint portion J (including the adjacent projection area PA) gradually narrows toward the rectangular portion T, and is located on the inner side of the joint portion J in the Y direction. In addition, although the shape of the light-shielding region is shown on the inner side of the joint portion J in the Y direction, the end portions can be made consistent with the contour of the shape. The other structures are the same as those of the second embodiment. In the exposure apparatus configured as described above, a test exposure is also performed before the exposure processing. For example, the light-shielding patterns SP1 and SP2 are rotated in stages and positioned at positions shown in Figs. 18 (a) to (c). Thereby, as shown in FIGS. 19 (a) to (c), the joint portions J in the shadow area PA are shielded from light according to the rotation angles of the light shielding patterns SP1 and SP2, respectively. In addition, the pattern of the photomask M was exposed to the glass substrate at each position where the shading amount of the joint part j is different. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (21〇X 297 public love) --- ----------------- Order --------- (Please read the notes on the back before filling this page) 486741 A7 ^ ______ B7 _ V. Description of the invention ( β).  / 板 P。 P plate. After that, similarly to the second embodiment, after the glass substrate P is developed, the outline shape of the pattern image of the repeated portion repeatedly exposed at the joint portion J and the rectangular portion T are measured with a measuring device such as a coincidence measuring device. The outline shape of the pattern image of the exposed non-repeating portion. Next, as shown in FIG. 17, the shape of the light-shielding pattern SP1, SP2 with respect to the joint portion J (for example, the position shown in FIG. 19 (b)) or the light-shielding pattern SP1, SP2 in which the illuminance power is the same in the repeated portion and the non-repeated portion are calculated. Each position (rotation angle + displacement) is stored in the storage device, and the appropriate shape (rotation angle + displacement) of the shading patterns SP1 and SP2 stored in the storage device is read out when the exposure process is performed, so as to control the driving device . As a result, the light-shielding regions formed by the light-shielding patterns SP1 and SP2 are deformed into the shape shown in FIG. 18 (b) with respect to the joint portion J. For the glass substrate P, the image contour shape of the repeating portion and the image contour of the non-repeating portion are formed. By exposing the pattern with a chemical reaction amount caused by uniform shape exposure, the same effect as that of the second embodiment can be achieved. In this embodiment, the rotation angles of the shading cases SP1 and SP2 at the first exposure and the second exposure may be made different. The joint portion J may be shielded with the light-shielding patterns SP1 and SP2 only during the first exposure, and the light-shielding patterns SP1 and SP2 may be withdrawn from the joint portion J without being shielded during the second exposure. The configuration for deforming the light-shielding region is not limited to the above embodiment, and other configurations may be adopted. In the above-mentioned embodiment, although a fly-eye lens is used as the optical integrator, it is not limited to this, and a rod-shaped lens of an inner surface reflection type may be used. In this case, it is sufficient if the patterned filter PF is provided on the exit side of the rod lens. In addition, a mobile device for moving the patterned filter PF within the conjugate plane. 34 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ -------- Order --------- (Please read the precautions on the back before filling out this page) 486741 A7 _______B7____ Jade, invention description (V)) / Although using the motor 51 and eccentric cam 52, but is not limited to this, and other configurations such as a piezoelectric element may be adopted. In the above embodiment, the patterning filter PF only adjusts the illuminance of the repeatedly exposed portion, but it is not limited to this. For example, a patterning having a light-shielding pattern (corresponding to the non-repeatedly exposed portion) may be separately provided. The filter, when the illuminance of the repeatedly exposed part is large, the illuminance of this part is reduced by the method described above; on the contrary, when the illuminance of the non-repeatedly exposed part is larger than that of the repeatedly exposed part, it can be reduced only Illumination of non-repeated exposure. In addition, although the light-shielding pattern SP is arranged to correspond to all the small lenses of the fly-eye lens 14, it may be arranged to correspond to a part of the small lenses. In this case, the amount of decrease in the illuminance is reduced, but light shielding can be used to compensate for the decrease. Moreover, in the above-mentioned embodiment, although a plurality of projection system modules 3a to 3e are used in which a part of the projection area PA is repeated with each other, that is, a complex lens type is used as an example, it is not limited to this. As shown in FIG. 20, a projection system module (projection optical system) having a single projection area PA is used, and is applicable when the first pattern 56 and the second pattern 57 are repeatedly scanned and exposed on the LCD pattern LD by the repeating section 58. Of it. At this time, after the first exposure scans and exposes the first pattern, the grating stage 4 is moved stepwise in the Y direction to adjust the position of the illumination area of the mask M, and the substrate stage 5 is moved stepwise in the Υ direction to adjust At the position of the projection area on the glass substrate P, the second pattern is scanned and exposed at the second exposure. At this time, in the same manner as above, and the exposure intensity of the joint J is adjusted before the exposure process, the application to the glass substrate can be performed. The chemical reaction of the photoresist of the repeating part 58 on P is 35 ^. The scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public Θ a --- I ---- order -------- I (Please read the precautions on the back before filling this page) 486741 A7 _____B7 _____ V. Description of the invention () The amount of chemical reaction is the same as the chemical reaction of other parts, and a good quality liquid crystal display element without streaks can be obtained. As the substrate of this embodiment, not only a glass substrate P for a liquid crystal display element, but also a semiconductor wafer for a semiconductor element, a ceramic wafer for a thin film magnetic head, or a photomask or a grating used for an exposure device can be used. Original (Synthetic (English wafer, silicon wafer), etc. In terms of the type of the exposure device 1, it is not limited to an exposure device for manufacturing a liquid crystal display element that exposes a liquid crystal display element pattern on a glass substrate P, and can be widely used to expose a semiconductor element pattern to An exposure device for manufacturing semiconductor elements on a wafer, a thin film magnetic head, an imaging device (CCD), or an exposure device for manufacturing a grating, etc. As the light source 6, a bright line (g-line) generated by an ultra-high pressure mercury lamp can be used. (436nm), h-line (404. 7nm), i-line (365nm)), KrF excimer laser (248nm), ArF excimer laser (193nm), and F2 laser (157nm). The magnifications of the projection system modules 3a to 3e can be equal magnification systems. Or reduce the system or even enlarge the system. In addition, as the projection system modules 3a to 3e, when using far-ultraviolet rays such as excimer lasers, the glass material is made of materials such as quartz or fluorite that can pass through far-ultraviolet rays, and F2 lasers or X-rays are used. As long as the reflective system or the optical system used for the reflective system is used (the photomask M is also a reflective type). In addition, a proximity exposure device that does not have the projection system modules 3a to 3e but exposes the mask M to the glass substrate ρ to expose the pattern of the mask M may be used. Use a linear motor 36 on the substrate platform 5 and the grating platform 4 Ϊ The paper size is applicable _ China National Standard (CNS) A4 specification (21〇 了 ^^ --------- ---------- ---------- Order --------- (Please read the notes on the back before filling out this page) 486741 A7 ------- B7___ V. Description of the invention (β) (USP5,623,853 or USP5,528,118), either: air bearing type using air bearing and magnetic type using Lorentz force or reactance. Also, each platform 4 , 5 can be a type that moves along the guide, or a type without a guide without a guide. As the drive mechanism 3, 7, 40 of each platform 4, 5, a planar motor can be used, which allows a two-dimensional space The magnet unit (permanent magnet) with magnets is arranged, and the armature unit with the coils is arranged in a one-dimensional space. The platforms 4 and 5 are driven by electromagnetic force. At this time, the magnet unit and the armature unit only need to be driven. One of them is connected to the platforms 4 and 5, and the other of the magnet unit and the armature unit is provided on the moving surface side (base) of each of the platforms 4, 5. This is caused by the movement of the substrate platform 5 The reaction force may be mechanically separated from the ground (earth) by a frame member as described in Japanese Patent Laid-Open No. 8-166475 (USP 5,528,118) so as not to be transmitted to the projection optical system 3. The present invention can also use an exposure device having the above structure.-The reaction force caused by the movement of the photomask platform 4 can also be described in Japanese Patent Laid-Open No. 8-33. It is generally described in JP 0224 (US S / N 08 / 416,558) ′ so as not to be transmitted to the projection optical system 3, and it is mechanically separated from the ground (earth) by the frame member. The present invention may also employ an exposure device having the above-mentioned structure. As described above, the exposure device 1 according to the embodiment of the present invention is to make 37 subsystems including various subsystems including the constituent elements listed in the scope of the patent application for the application to maintain the predetermined mechanical, electrical, and optical accuracy. Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ---- Order ------ i.  486741 A7 --------- B7 ____ _ V. Description of invention (fraud) Assembled and manufactured. In order to ensure various precisions, before and after the assembly, the optical precision is adjusted for various optical systems, and the mechanical precision is adjusted for various mechanical systems. The electrical precision is adjusted for various electrical systems. The process of assembling various subsystems to the exposure device includes mechanical connections of various subsystems, wiring connections of electrical circuits, and piping connections of pneumatic lines. Prior to the process of assembling various subsystems to the exposure device, of course, there are also individual assembling processes for each subsystem. When various subsystems are assembled into the exposure device, the process is adjusted to ensure the accuracy of the entire exposure device. It is preferable to manufacture the exposure device in a vacuum chamber in which temperature and cleanliness are controlled. Elements such as a liquid crystal display element and a semiconductor element are manufactured as shown in FIG. 21 through the following steps. That is, step 201 of performing the function and performance design of the liquid crystal display element, etc., step 202 of making a photomask M (grating) according to the design step, making a glass substrate P from quartz, or making a wafer from a silicon material Step 203, step 204 of exposing the pattern of the photomask M on the glass substrate P (or wafer) by the scanning exposure device 1 of the aforementioned embodiment, and step of combining liquid crystal display elements and the like (case of wafers) Including cutting process, wire bonding process, packaging process) 205, inspection step 206, and so on. (Fourth Embodiment) Fig. 23 is a schematic configuration diagram of a projection exposure apparatus according to a fourth embodiment, and this projection exposure apparatus is a step-and-scan type stitching projection exposure apparatus. In the following description, refer to 38 shown in Figure 23 -------------------- Order --------- (Please read first Note on the back, please fill out this page again.) This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 486741 A7 ____B7_ V. Description of the invention (^) XYZ orthogonal coordinate system to explain the positional relationship of each component. In this XYZ coordinate system, the X-axis and Z-axis systems are set to be parallel to the paper surface, and the Y-axis system is set to be perpendicular to the paper surface. In the figure, the XYZ coordinate system is actually set to a plane parallel to the horizontal plane, and the Z axis system is set to vertically downward (in the direction of gravity). In FIG. 23, the light source 111 is an ultra-high pressure mercury lamp that supplies exposure light such as g-line (wavelength: 436mn), h-line (wavelength: 404nm), i-line (wavelength: 365mn). The light source 111 is positioned near the first focal position of the elliptical mirror 112, and the light from the light source 111 is condensed at the second focal position of the elliptical mirror 112 to form a light source image there. An ON / OFF shutter 113 for performing exposure light (illumination light) is provided near the light source image formation position. The light from the light source image is converted into a substantially parallel light beam by the input lens group 1H (the front focal point is positioned near the light source image forming position). The parallel beam is provided with a patterning filter 115 described later. The light passing through the patterning filter 115 is incident on the fly-eye lens 116 (a plurality of rod-shaped lens elements are integrated into a two-dimensional matrix). A surface light source (secondary light source), which is a collection of light source images collected by the respective rod lens elements, is formed near the exit surface of the fly-eye lens 116. An illumination aperture stop (not shown) having a predetermined aperture diameter is arranged at the surface light source formation position. The light from the secondary light source is condensed by the condenser lens system 117 (the front focus system is positioned near the position where the secondary light source is formed), and the illumination area on the photomask M is overlapped. In the example in FIG. 23, the optical path refraction lens 39 is omitted. The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) ^^ 1 n —ϋ nnn —Hi · nn 11 aMmam MIBW n I # 486741 A7 ____B7__ 5. Illustration of invention description (β) ·. The light from the circuit pattern on the mask M illuminated by the above illumination optical system (111 to 117) reaches the workpiece W coated with a photosensitive material on the surface through the projection optical system PL, and forms a projection on the workpiece W. Circuit pattern image formed by the optical system PL. In this embodiment, the projection optical system PL has a first imaging system PLa (where the intermediate image of the mask μ is formed at the intermediate image formation position) and a second imaging system PLb (where the aforementioned intermediate image is re-imaged on the workpiece W). . As described above, the projection optical system pl is such that an erect front image of the mask M (an image in which the lateral magnifications in the X direction and the Y direction are positive) is formed in the projection area on the workpiece W. In addition, the reticle stage ^ 48 holding the reticle M is movable in the 乂 ¥ plane, and the work piece platform WS holding the workpiece W is movably set in the XY plane and the position of the workpiece W in the Z direction can be adjusted. Degree of tilt relative to the Z axis. Fig. 24 is a plan view showing the relationship between the exposure area on the workpiece W and the projection area formed by the projection optical system PL. The exposure operation of this embodiment will be briefly described with reference to Fig. 24 and Fig. 23 described above. In this embodiment, a field diaphragm for setting the shape of the projection area PA to a ladder shape is arranged near the mask M and at least one of the intermediate image formation positions IP. First, the projection area PA formed by the projection optical system is positioned at an end portion in the -X direction and an end portion in the + Y direction on the workpiece W. Thereafter, the shutter 113 is opened to move the mask M and the work W in the X direction with respect to the projection optical system PL. At this time, the speed ratio of the mask M to the workpiece W is 40 times the projection light. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)- -------- Order ---------, 486741 V. Description of the invention) The multiplication ratio (eg + 1) of the learning system PL is the same ratio. With this operation, the exposure area EA1 composed of the area 141 and the area 142 on the workpiece W is exposed. After the exposure to the exposure area EA1 is completed, the shutter 113 is closed, and the mask M and the workpiece W are moved toward the -Y direction with respect to the projection optical system PL by a predetermined step amount. After that, the shutter Π3 is opened again, and the mask M and the workpiece W are moved in the -X direction with respect to the projection optical system PL. By this operation, the exposure area EA2 composed of the area 142, the area 143, and the area 144 on the workpiece W is exposed. After the exposure to the exposure area EA2 is completed, the shutter 113 'is closed, and the mask M and the workpiece W are moved toward the -Y direction with respect to the projection optical system PL by a predetermined step amount. After that, the shutter Π3 is opened again, and the mask M and the workpiece W are moved in the + X direction with respect to the projection optical system PL. With this operation, the exposure area EA3 composed of the area 145 ', area 146, and area 147 on the workpiece W is exposed. As such, in this embodiment, an exposure area larger than the projection area PA of the projection optical system can be obtained. FIG. 24 shows a projection area PA in the middle of exposure to the exposure area EA3. Here, the regions 142, 144, and 146 are re-exposure regions where two exposures are respectively performed, and the regions 141, 143, and 145 are non-repeated exposure regions. Here, the ladder-shaped projection area PA can be considered as being divided into a rectangular area and two triangular areas located at both ends of the rectangular long side direction. In this embodiment, 'the rectangular area is used to expose non-41 ^^ scales to the Chinese National Standard (CNS) A4 specification (21〇x 297 Public Love 1 " (Please read the precautions on the back before filling out this page)- Lf Order ---------.  486741 A7 _____; _B7___ 5. Description of the Invention (I >) Repeated exposure areas 141, 143, and 145. Repeated exposure areas 142, 144, and 146 are exposed by triangular areas. The amount of movement) is determined based on this. Furthermore, in this embodiment, the setting mechanism (patterned filter 115) that continuously changes the exposure amounts of the repeatedly exposed areas 142, 144, and 146 is arranged near the incident surface of the fly-eye lens 116. The position near the incident surface of the fly-eye lens 116 is a position in the optical path that is optically conjugated to the workpiece W in a plurality of light paths corresponding to the light paths of the plurality of light source images formed by the fly-eye lens, respectively. Fig. 25 is a plan view of the patterned filter 115 as a setting mechanism. 25 also shows the incident surface 116a of a plurality of element lenses (rod-shaped lens elements) constituting the fly-eye lens 116 at a glance. As shown in FIG. 25, the patterned calender 115 of this embodiment is formed by, for example, providing a plurality of light-shielding patterns 115b such as chromium on a light-transmitting base material 115a made of a glass substrate by vapor deposition or the like. Returning to FIG. 23, the patterned filter 115 is provided in such a way that a small amount of continuous movement can be performed in the X direction (the direction corresponding to the scanning direction) by the filter driving unit 121 in the figure. The pattern provided on the light-transmitting substrate U5a of the patterned filter 115 is not limited to a light-shielding pattern, and may be a decay pattern. As this decay pattern, for example, minute light-shielding portions arranged randomly can be used. Next, the positional relationship between the projection area PA and the light shielding pattern 115b of the patterned filter 115 will be described with reference to FIG. Also, in FIG. 26, the position of the incident surface 116a of each element lens of the fly-eye lens 116 does not correspond to the 42 paper size. The Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable. (Please read first Note on the back, please fill in this page again.) -------- Order ------ ^ ---- · 486741 A7 B7 V. Description of the invention (ι > 丨) / Area PAI of shadow area PA (The images of PAI in this area correspond one-to-one in the projection area PA). 26 (A) shows a state where light is blocked by the light-shielding pattern 115b, and FIG. 26 (B) shows a state where light is blocked by the light-shielding pattern. In FIG. 26, the area PAI on the incident surface 116a corresponding to the projection area PA has a ladder shape with an upper edge 151, a lower edge 152, and two hypotenuse edges 153, 154, and has a non-repeating area 141 shown in FIG. 24. The rectangular sub-regions 155 corresponding to 143, 145, and the two rectangular sub-regions 156, 157 corresponding to the repeating regions 142, 144, 146. Although FIG. 26 shows only a portion related to the incident surface 116a of one element lens, the above-mentioned relationship is actually established at each incident surface of the fly-eye lens 116. Further, in FIG. 26, four light-shielding patterns 115b1 to 115b4 among the plurality of light-shielding patterns 115b formed on the base 115a are shown. Here, corresponding to the area PAI in FIG. 26 are two light-shielding patterns 115b, 115b2, and the two light-shielding patterns 115bl, 115b2 are in a mirror-image relationship with each other, so only the light-shielding pattern 115bl will be described here. The light-shielding pattern 115bl is arranged corresponding to the sub-region 156 on the right side (+ Y direction side) in the figure of the region PAI, and has a hexagonal shape with six sides 251 to 256. Here, the upper side 251 of the light shielding pattern 115bl is positioned parallel to the lower side 152 of the area PAI. The apex 257 formed by the two oblique edges 252, 253 on the left side (-Y direction side) in the light-shielding pattern 115M is positioned near the extension of the boundary line between the sub-region 155 and the sub-region 156 in the Y-axis position. In addition, the position of the vertex 258 formed by the upper edge 251 and the hypotenuse 252 on the Y axis is positioned at a perpendicular line passing through the midpoint of the hypotenuse 153 midpoint 152 (this perpendicular line becomes the bottom edge (152) of the subregion 156) Extension line 43) This paper size is suitable for financial and family care standards (CNS) A4 (21G X 297 meters) (Please read the precautions on the back before filling this page) ---- II — I ^ 0 I ---- I-* 486741 A7 ____—___ B7___ 5. Description of the invention (^). In addition, the hypotenuse 253 on the lower side (-X direction side) of the light-shielding pattern 115bl is in a state (non-light-shielding state) shown in FIG. 26 (A) so as not to interfere with the incident surface of the element lens below the area PAI. The area (not shown) corresponding to the projection area PA on the upper surface is determined by interference. This can be understood from the positional relationship between the hypotenuse 153 of the PAI in the area of FIG. 26 (A) and the hypotenuse of the light shielding pattern 115b3. In addition, the oblique side 255 of the light-shielding pattern 115M is in a non-light-shielding state in FIG. 26 (A) in such a manner that it does not interfere with the area corresponding to the projection area PA on the incident surface of the element lens at the diagonally lower right side of the area PAI. To decide. This matter can be understood from the positional relationship between the hypotenuse 154 of the area PAI and the light shielding pattern 115b4 in FIG. 26 (A). In addition, when the patterned filter 115 is moved to the + X direction side in FIG. 25, as shown in FIG. 26 (B), the upper edge 251 and the hypotenuse 252 of the light-shielding pattern 115bl, 115b2 will change the child area 156 of the area PAI. (157) Part of the light shielding. Since the same light-shielding is received on each incident surface of the plurality of element lenses, the area corresponding to the repeated area of the projection area PA is light-shielded. Fig. 27 (A) shows the exposure amount distribution in the case where scanning exposure is performed on the work W using the above-mentioned partially shielded projection area. Also, for convenience of explanation, the exposure amount distributions in Figs. 27 (A) and (B) show the case where a blank (no pattern) mask M is used. In Figure 27 (A). Among them, the solid line is the exposure amount distribution in the case of being shielded, and the dashed line is the exposure amount distribution in the case of not being shielded. Here, the exposure of area 71 shows the exposure of the non-repeated area in Fig. 24, and the exposure of areas 72 and 73 shows the exposure of the repeated area in Fig. 24 after one scan. 44 (Please read the precautions on the back before (Fill in this page) · II — III I · I I--III.  This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 486741 A7 ______B7______ 5. Description of the invention (0) Light exposure. As explained with reference to Fig. 24, the exposure amount distribution after the two scanning exposures after repeated scanning exposures in the repeated area is as shown in Fig. 27 (B). In Fig. 27 (B), area 74 corresponds to the repeated area after two scanning exposures, and areas 75 and 76 correspond to non-repeated areas. The method of not changing the exposure amount of the non-repeated area but only changing the exposure amount of the repeated area can be understood from FIG. 27 (B). That is, in the present embodiment, the exposure amount of the non-repeated area and the exposure amount of the repeated area can be controlled independently by the movement of the patterned filter 115 as a setting mechanism. Since the position of the patterned filter Π5 in the X direction is continuously changed as shown in Fig. 23, the area of the light-shielding area (hatched portion) in Fig. 26 (B) is also continuously changed. Therefore, it can be understood that the exposure amount of the repeated area 74 shown in Fig. 27 (B) is also continuously changed. As in this embodiment, even if the patterned filter 115 is arranged near the incident surface of the fly-eye lens 116, that is, the light path corresponding to the plurality of light source images formed by the fly-eye lens 116 is approximately equal to the workpiece W. A plurality of light-shielding patterns 115b are arranged at the conjugate positions, and the macroscopic shape of the secondary light source (surface light source) formed by the plurality of light source images formed by the compound eye lens 116 on its exit surface (the pupil of the lighting system) does not change. Therefore, the exposure can be adjusted without losing high beam. Next, the adjustment operation of the patterned filter 115 as a setting mechanism will be briefly described. First, for a workpiece W coated with a photosensitive material (photoresist), the exposure amount is changed stepwise to perform a plurality of test exposures. After that, 45 paper sizes are applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Order --------

486741 A7 ____B7__ 五、發明說明（ ινΑ ) 對進行過測試曝光之工件進行顯像處理，得到基於不同曝 光量之光阻圖案。 接著，採用SEM(掃描型電子顯微鏡)等之觀察機構來 觀察該光阻圖案，量測其線寬、高度（圖案之膜厚）、錐面 角等之光阻輪廓。由此量測結果，決定線寬誤差等可減少( 得到最適之光阻輪廓)之曝光量。此曝光量係對應於非重複 區域之曝光量。又，由於有時每種所欲形成之圖案(例如密 集圖案與獨立圖案）的最適(線寬誤差等少)曝光量並不同， 所以此非重複區域之曝光量決定最好依據圖案的形狀來決 定。 其次，藉由進行至少2次之掃描曝光，對塗佈有感光 性材料之工件W上的重複區域進行測試曝光。此時，作爲 曝光量係使用上述所得之曝光量。此時，變更圖案化濾光 器115之插入量(與重複區域對應之部分的曝光量）進行複 數次之測試曝光。接著，對進行過測試曝光之工件W進行 顯像處理，得到基於不同插入量之光阻圖案。與上述之量 測同樣地，採甩· SEM(掃描型電子顯微鏡)等之觀察機構來 觀察該光阻圖案，量測其線寬、高度（圖案之膜厚）、錐面 角等之光阻輪廓。由此量測結果，決定線寬誤差等可減少( 得到最適之光阻輪廊)之圖案化爐光器115的插入量、亦即 決定重複區域之曝光量。又，由於有時每種所欲形成之圖 案(例如密集圖案與獨立圖案)的最適(線寬誤差等少)曝光量 並不同，所以此重複區域之曝光量決定最好依據圖案的形 狀來決定。 46 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） , I----- (請先閱讀背面之注意事項再填寫本頁) 一«J.486741 A7 ____B7__ V. Description of the Invention (ινΑ) The workpieces subjected to test exposure are developed to obtain photoresist patterns based on different exposures. Next, the photoresist pattern is observed using an observation mechanism such as a SEM (scanning electron microscope), and the photoresist profile such as line width, height (pattern thickness of the pattern), and cone angle is measured. Based on the measurement results, determine the exposure amount that can reduce (get the optimal photoresist profile) the line width error and so on. This exposure corresponds to the exposure in the non-repeated area. In addition, since the optimal exposure (small line width error, etc.) of each desired pattern (such as dense pattern and independent pattern) is different, the exposure amount of this non-repeating area is best determined by the shape of the pattern. Decide. Next, test exposure is performed on a repeated area on the workpiece W coated with the photosensitive material by performing scanning exposure at least twice. At this time, the exposure amount obtained above was used as the exposure amount. At this time, the insertion amount of the patterned filter 115 (the exposure amount of the portion corresponding to the repeated area) is changed to perform a plurality of test exposures. Next, the work W subjected to the test exposure is developed to obtain a photoresist pattern based on different insertion amounts. Similar to the above measurement, the photoresist pattern is observed using an observation mechanism such as a SEM (scanning electron microscope), and the photoresist of the line width, height (film thickness of the pattern), and cone angle is measured. profile. From this measurement result, it is determined that the insertion amount of the patterned burner 115 that can reduce (get the optimum photoresistance contour) the line width error, etc., that is, determine the exposure amount of the repeated area. In addition, since the optimal exposure amount (less line width error, etc.) of each desired pattern (for example, dense pattern and independent pattern) is different, it is best to determine the exposure amount of the repeating region based on the shape of the pattern. . 46 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm), I ----- (Please read the precautions on the back before filling out this page)-«J.

486741 A7 ___B7___ 五、發明說明（) 經過以上的製程，可決定出對於重複區域之最適的曝 光量以及對於非重複區域之最適的曝光量。 -------------— (請先閱讀背面之注意事項再填寫本頁) 又，在上述的例子中，雖對於非重複區域之曝光量決 定與對於重複區域之曝光量決定係在不同的測試曝光來進 行，但也可在進行至少2次之掃描曝光的測試曝光之際， 進行對於非重複區域之曝光量決定。 (第4實施形態之變形例） 在第4實施形態係如圖25所示’在光透過性基板所構 成之基座115a上形成有遮光圖案115b，但取而代之，亦 可以具有既定之平面形狀之遮光性構件來形成設定機構。 以下，係參·照用以顯示有關第4實施形態之變形例的 設定機構之圖（圖28)來說明此變形例。又，在圖28中，對 具有圖23〜27所示之構件爲同樣機能之構件係賦予同樣符 號。 .% 於圖28(A)中，遮光圖案板160係例如將氧化锆(Zr02) 等之遮光性構件切成梳狀所形成者。此遮光圖案板160係 具有延伸於圖中之X方向的第1邊緣對161a，161b、第2 邊緣對162a，162b、第3邊緣對163a，163b、第4邊緣對 164a，164b、第 5 邊緣對 165a，165b、第 6 邊緣對 166a，166b 。此時，各邊緣對係分別形成梳子的齒。 於圖28(A)中，遮光圖案板160係與第4實施形態之 圖案化濾光器115同樣，構成爲可在圖中X方向移動。接 著，如圖28(B)所示，讓遮光圖案板160之梳齒位於與複 眼透鏡116之各要素透鏡的入射面116a之區域PAI(對應 47 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ____ B7_— —______ 五、發明說明（4 ) 於投影區域PA之區域)對應之部分來進行Y方向之定位。 從而，一旦遮光圖案板160與複眼透鏡116之入射面重疊 ，則與區域PAI之重複區域對應之部分會由6組之邊緣對 受到部分之遮光。 藉此，基於少有遠光性之喪失之情事’乃可讓對於重 複區域之曝光量與對於非重複區域之曝光量做獨立的連續 變動。又，圖28(A)，(B)所示之梳齒形狀的遮光圖案亦可與 圖24同樣般形成於光透過性構件上。 (第5實施形態） 圖29(A)係有關第5實施形態之投影曝光裝置的槪略 構成圖，圖29(B)係作爲設定機構之照明視野光闌的俯視 圖。此處，圖29中與第4實施形態具有同樣機能之構件係 賦予同樣的符號。 又，在圖29(A)，(B)所示之第5實施形態中，與第4實 施形態相異之點在於，（a)在照明光學系統中配置著用以讓 光路偏向之2片的光路折射鏡FM1，FM2 ; (b)取代圖案化濾 光器115而設置照明視野光闌118作爲設定機構；（c)設置 用以讓照明視野光闌118與光罩Μ(工件W)成爲光學上共 軛之照明視野光闌成像光學系統119(119a，119b)。 以下參照圖29(A)，(B)來說明與第4實施形態之相異之 處。於圖29(A)中，在第5實施形態之投影曝光裝置，係 將光罩Μ定位於聚光透鏡系統117之後側焦點位置附近， 而在本實施形態，則是將具有既定形狀之開口部的照明視 野光闌118定位於該處。 48 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公-- (請先閱讀背面之注意事項再填寫本頁)486741 A7 ___B7___ 5. Description of the invention () After the above process, the optimal exposure amount for the repeated area and the optimal exposure amount for the non-repeated area can be determined. -------------— (Please read the precautions on the back before filling in this page) Also, in the above example, although the exposure amount for non-repeating areas is determined and the exposure for repetitive areas is determined The amount determination is performed at different test exposures, but it is also possible to determine the exposure amount for non-repeated areas while performing test exposures of at least two scan exposures. (Modification of the fourth embodiment) In the fourth embodiment, as shown in FIG. 25, a light-shielding pattern 115b is formed on a base 115a made of a light-transmitting substrate, but it may have a predetermined planar shape instead. The light-shielding member forms a setting mechanism. Hereinafter, this modification will be described with reference to a diagram (FIG. 28) showing a setting mechanism for a modification of the fourth embodiment. In Fig. 28, members having the same functions as those shown in Figs. 23 to 27 are given the same symbols. .% In FIG. 28 (A), the light-shielding pattern plate 160 is formed by cutting a light-shielding member such as zirconia (Zr02) into a comb shape. The light-shielding pattern plate 160 has a first edge pair 161a, 161b, a second edge pair 162a, 162b, a third edge pair 163a, 163b, a fourth edge pair 164a, 164b, and a fifth edge extending in the X direction in the figure. Pair 165a, 165b, and 6th edge pair 166a, 166b. At this time, each edge pair forms a comb tooth. In Fig. 28 (A), the light-shielding pattern plate 160 is configured to be movable in the X direction in the figure similarly to the patterned filter 115 of the fourth embodiment. Next, as shown in FIG. 28 (B), the comb teeth of the light-shielding pattern plate 160 are located in the area PAI (corresponding to 47 paper standards applicable to the Chinese National Standard (CNS) A4 specification) corresponding to the incident surface 116a of each element lens of the fly-eye lens 116 (210 X 297 mm) 486741 A7 ____ B7_— —______ V. Description of the invention (4) The area corresponding to the projection area PA) is used to locate the Y direction. Therefore, once the light-shielding pattern plate 160 and the incident surface of the fly-eye lens 116 overlap, the portion corresponding to the repeated area of the area PAI will be shielded by the edge of the 6 groups to the receiving portion. Thus, based on the fact that there is little loss of high beam, it is possible to make independent continuous changes in the exposure amount for the repeated area and the exposure amount for the non-repeated area. Further, the comb-shaped light-shielding pattern shown in Figs. 28 (A) and (B) may be formed on a light-transmitting member in the same manner as in Fig. 24. (Fifth Embodiment) Fig. 29 (A) is a schematic configuration diagram of a projection exposure apparatus according to a fifth embodiment, and Fig. 29 (B) is a plan view of an illumination field diaphragm as a setting mechanism. Here, in Fig. 29, members having the same functions as those of the fourth embodiment are given the same reference numerals. The fifth embodiment shown in FIGS. 29 (A) and (B) is different from the fourth embodiment in that (a) two pieces are arranged in the illumination optical system to deflect the optical path. Optical path refraction mirrors FM1, FM2; (b) instead of the patterned filter 115, an illumination field diaphragm 118 is provided as a setting mechanism; (c) an illumination field diaphragm 118 and a mask M (workpiece W) are provided Optically conjugate illuminated field diaphragm imaging optical system 119 (119a, 119b). The differences from the fourth embodiment will be described below with reference to Figs. 29 (A) and (B). In FIG. 29 (A), in the projection exposure apparatus of the fifth embodiment, the mask M is positioned near the focal position on the rear side of the condenser lens system 117. In this embodiment, an opening having a predetermined shape is formed. The partial illumination field diaphragm 118 is positioned there. 48 This paper size applies to China National Standard (CNS) A4 (210 X 297 male-(Please read the precautions on the back before filling this page)

486741 A7 _^___Β7______ 五、發明說明（ (請先閱讀背面之注意事項再填寫本頁) 照明視野光闌係如圖29(B)之俯視圖所示般’具有大 致梯形狀之開口·部。此梯形狀之開口部係由上邊281、下 邊282、兩個斜邊283,284、以及凸形狀之突起部285,286 來規定其形狀。 回到圖29(A)，通過照明視野光闌118之開口部的光 束係經過由透鏡群119a與119b所構成之照明視野光闌成 像光學系統119而到達光罩Μ。此時，於光罩Μ上係形成 有照明視野光闌118之開口部的像之照明區域。此光罩Μ 上之照明區域係與照明視野光闌Π8之開口部爲相似形狀 〇 於本實施形態，投影光學系統PL同樣地將照明區域 內之光罩Μ的圖案之正立正像形成於工件W上之投影區 域內。又，於本實施形態中，複眼透鏡116之入射面U6a 、照明視野光闌118、光罩Μ之圖案面、投影光學系統PL 中之視野光闌、以及工件W係相互呈共軛之位置關係。 又，在圖29(B)中，呈大致梯形狀之照明視野光闌118 的開口部可視做劃分成長方形狀之子區域255、大致三角 形狀之兩個子區域256,257來考慮。此時，在進行照明視 野光闌118之定位時，係以通過長方形狀之子區域255的 曝光用光使得工件W上之非重複區域受到曝光，通過子區 域256,257之曝光用光使得工件W上之重複區域受到曝光 的方式來進行。 此處，由於凸形狀之突起部285,286係定位於與重複 區域對應之子區域256,257內，所以突起部285,286所進 49 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 五、發明說明（β ) 行之遮光會造成重複區域之曝光量較非重複區域之曝光囊 爲低之結果。亦即，在本實施形態中，可讓重複區域之曝 光量與非重複區域之曝光量獨立地來設定。 又，在圖2·9(Α)，(Β)所示之例子中，對應於重複區域之 子區域256,257內係設有凸形狀之突起部285,286，但亦可 代之以在子區域256,257內設置凹形狀之凹陷部。藉由設 置此凹陷部，可讓重複區域之曝光量大於非重複區域之# 光量。 又，於圖29(Α)，(Β)所示之例子中，亦可設置突起部 285,286之突起量不同之複數種類的照明視野光闌US ’ & 可相互交換（可選擇性插入光路中）的方式來設置。此時’ 雖有離散之情形但可讓重複區域之曝光量與非重複區域2 曝光量獨立地來調整。又，亦可在可交換之複數的照明視 野光闌當中加入設有上述之凹形狀凹陷部之照明視野光_ 〇 (第5實施形態之變形例） 在上述之第5實施形態中，雖對於重複區域之曝光量 爲固定或可離散地變更，但以連續方式來變更對於重複1 域之曝光量的例子係以第5實施形態之變形例來表示° 圖30所示係第5實施形態之變形例之照明視野光闌之 構成圖。於圖30中，相關於第5實施形態之照明視野光闌 ，係具有固定光闌280(具有梯形狀之開口部）與可動光闌 289(具有凸形狀之突起部285,286)。此處，可動光闌289 係設置成可沿圖中之X方向微動自如，依據可動光闌289 50 (請先53讀背面之注意事項存填寫本頁) r—:—1T--------- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ________;_B7___ 五、發明說明（d ) 在X方向之位置來決定凸形狀之突起部285,286往固定光 闌280之開口部的插入量。亦即，藉由調整可動光闌289 在X方向之位置，可獨立地調整重複區域之曝光量與非重 複區域之曝光量。 又，在本變形例中，固定光闌280係配置在與光罩Μ 之圖案面呈共軛之位置，可動光闌289爲了避免與固定光 闌280之摩擦乃配置於自該共軛位置偏移少量之位置(散焦 位置）。此固定光闌280與可動光闌289之位置關係亦可互 換。 又，在本變形例，固定光闌280與可動光闌289雖是 由切割遮光性構件所形成，但亦可在光透過性之基板上設 置遮光圖案來形成之。此時，讓2片之基板的遮光圖案面 彼此對向配置爲佳。此時，亦可取代遮光圖案而設置衰光 圖案。 (第6實施形態） 在第5實施形態雖將作爲設定機構之照明視野光闌配 置在照明視野光闌成像光學系統之光罩的共軛位置，但照 明視野光闌亦可配置於光罩Μ之附近。 以下參照圖31來說明將照明視野光闌配置於光罩Μ 之附近的第6實施形態。又，在圖31中，與上述之第4以 及第5實施形態有同樣之機能的構件係賦予相同符號。 第3實施形態係將上述第5實施形態所示之照明視野 光闌118配置在第4實施形態之照明光學系統之光罩Μ的 正上方、詳細地說是聚光光學系統117與光罩Μ之間的光 51 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) - n H ϋ n 1 ϋ n 一^ n n I n n n · 486741 A7 _______B7_ 五、發明說明（f ) 路中之自光罩Μ若干散焦之位置處。又，即使是自光罩Μ 若干散焦的位置，實質上仍可視爲光罩Μ之位置。 由於本實施形態之照明視野光闌Π8與上述之第5實 施形態爲同樣之物，所以可將工件W之重複區域的曝光量 與非重複區域之曝光量獨立設定。 又，在第6實施形態當然也可使用圖30所示之照明視 野光闌280,289。 (第7實施形態） 圖32係有關第7實施形態之投影曝光裝置之槪略構成 圖。於圖32中與上述之第4〜第6實施形態所示之構件爲 同樣之構件係賦予相同的符號。於圖32之第7實施形態中 ，與圖31之第6實施形態差異之處在於，原先配置於光罩 Μ之正上方的照明視野光闌118係改配置在工件W之正上 方、亦即投影光學系統PL與工件W之間的光路中之自工 件W若干散焦之位置處。又，即使是自工件W若干散焦 的位置，實質上仍可視爲工件W之位置。由於本實施形態 之照明視野光闌118與上述之第5及第6實施形態爲同樣 之物，所以可將工件W之重複區域的曝光量與非重複區域 之曝光量獨立設定。又’在第7實施形態當然也可使用圖 30所示之照明視野光闌280,289。 (第8實施形態） 圖33係有關第8實施形態之投影曝光裝置之槪略構成 圖。於圖33中與上述之第4〜第7實施形態所示之構件爲 同樣之構件係賦予相同的符號。於圖33之第8實施形態中 52 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) - 486741 A7 _ B7_____ 五、發明說明（d ) ，與圖31之第7實施形態差異之構成爲’讓原先配置於光 罩Μ之正上方的照明視野光闌118配置在投影光學系統 PL之中間像形成位置。由於本實施形態之照明視野光闌 118與上述之第5〜第7實施形態爲同樣之物’所以可將工 件W之重複區域的曝光量與非重複區域之曝光量獨立設定 。又，在第8實施形態當然也可使用圖30所示之照明視野 光闌 280,289。 又，在上述第6〜第8實施形態中’可與第5實施形態 同樣在聚光光學系統117之後側焦點位置附近配置不具設 定機構之照明視野光闌’於該照明視野光闌與光罩Μ之間 配置照明視野光闌成像光學系統119。 (第9實施形感） 以下，參照圖34說明本發明之第9實施形態。於圖 34中，光罩Μ與工件W係沿著ΧΥ平面來配置，將ΧΥ 平面當中之掃描方向定爲χ方向、將直交於χ方向之非掃 描方向定爲Υ方向、而將直交於χγ平面之方向定爲ζ方 向。於圖34中，與上述第4〜第8實施形態爲同一構成要 素係賦予同一符號。 第9實施形態之投影曝光裝置係藉由後述之照明裝置 來照明光罩Μ上之複數的照明區域IAA，IAB，IAC，藉由分 別對應於該等之複數之照明區域ΙΑΑ〜IAC而配置之複數的 投影光學系統PLA，PLB，PLC來讓複數之照明區域 IAA〜IAC內之光罩Μ的圖案之正立正像形成於工件W上 之投影區域PAA，PAB，PAC內。 53 本纸張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） (請先閱讀背面之注意事項再填寫本頁)486741 A7 _ ^ ___ Β7 ______ 5. Description of the invention ((Please read the precautions on the back before filling in this page) The illumination field diaphragm is shown in the top view of Figure 29 (B). The ladder-shaped opening is defined by the upper side 281, the lower side 282, the two oblique sides 283,284, and the convex-shaped protrusions 285,286. Returning to FIG. 29 (A), the light beam passing through the opening of the field diaphragm 118 is illuminated. It reaches the mask M through the illumination field diaphragm imaging optical system 119 composed of the lens groups 119a and 119b. At this time, the illumination region of the image of the opening portion of the illumination field diaphragm 118 is formed on the mask M. The illumination area on this mask M is similar in shape to the opening of the illumination field diaphragm Π8. In this embodiment, the projection optical system PL similarly forms an erect image of the pattern of the mask M in the illumination area on the workpiece In the projection area on W. In this embodiment, the incident surface U6a of the fly-eye lens 116, the illumination field diaphragm 118, the pattern surface of the mask M, the field diaphragm in the projection optical system PL, and the workpiece W system. mutual The positional relationship of the conjugates. Also, in FIG. 29 (B), the opening of the illumination field diaphragm 118 having a substantially trapezoidal shape can be considered as dividing into two sub-regions 255 and 256, 257 of a rectangular shape. At this time, when the illumination field diaphragm 118 is positioned, the non-repeating area on the workpiece W is exposed by the exposure light passing through the rectangular sub-region 255, and the workpiece W is exposed by the exposure light passing through the sub-regions 256,257. The repeating area is exposed by exposure. Here, since the convex-shaped protrusions 285,286 are positioned in the sub-regions 256,257 corresponding to the repeating area, the protrusions 285,286 are inserted. Specification (210 X 297 mm) 486741 A7 V. Description of the invention (β) The light shielding in the line will result in a lower exposure of the repeating area than the exposure capsule of the non-repeating area. That is, in this embodiment, the The exposure amount of the repeating area is set independently from the exposure amount of the non-repeating area. In the example shown in FIGS. 2 · 9 (A) and (B), it corresponds to the repeating area. Sub-regions 256, 257 are provided with convex-shaped protrusions 285, 286, but can be replaced with concave-shaped depressions in sub-regions 256, 257. By providing this depression, the exposure of the repeated area can be greater than that of the non-repeated area ## The amount of light. In the example shown in Figs. 29 (A) and (B), plural types of illumination field diaphragms US '& with different protrusions 285 and 286 can be provided. (Insert the light path into the light path). At this time, although there are discrete cases, the exposure of the repeating area and the exposure of the non-repeating area 2 can be adjusted independently. It is also possible to add the illumination field light provided with the above-mentioned concave-shaped recessed portion to a plurality of interchangeable illumination field apertures. _ (A modification of the fifth embodiment) In the fifth embodiment described above, although The exposure amount of the repeating region is fixed or can be changed discretely, but the example of changing the exposure amount of the repeating 1 field in a continuous manner is shown by a modification of the fifth embodiment. FIG. 30 shows the fifth embodiment. The structure diagram of the illumination field diaphragm of the modification. In FIG. 30, the illumination field diaphragm according to the fifth embodiment includes a fixed diaphragm 280 (having a ladder-shaped opening portion) and a movable diaphragm 289 (having convex portions 285, 286). Here, the movable diaphragm 289 is set to be able to move slightly in the X direction in the figure, according to the movable diaphragm 289 50 (please read the precautions on the back 53 and fill out this page) r —: — 1T ----- ---- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 486741 A7 ________; _B7___ V. Description of the invention (d) The position of the convex portion in the X direction determines the convex shape 285,286 to be fixed The insertion amount of the opening of the diaphragm 280. That is, by adjusting the position of the movable diaphragm 289 in the X direction, the exposure amount of the repeated area and the exposure amount of the non-repeated area can be independently adjusted. In this modification, the fixed diaphragm 280 is disposed at a position conjugate to the pattern surface of the mask M, and the movable diaphragm 289 is disposed at a position away from the conjugate position in order to avoid friction with the fixed diaphragm 280. Move a small amount (defocus position). The positional relationship between the fixed diaphragm 280 and the movable diaphragm 289 can also be interchanged. In this modification, although the fixed diaphragm 280 and the movable diaphragm 289 are formed by cutting a light-shielding member, a light-shielding pattern may be formed on a light-transmitting substrate. In this case, it is better to arrange the light-shielding pattern surfaces of the two substrates facing each other. In this case, a decay pattern may be provided instead of the light-shielding pattern. (Sixth Embodiment) In the fifth embodiment, although the illumination field diaphragm as a setting mechanism is disposed at the conjugate position of the mask of the illumination field diaphragm imaging optical system, the illumination field diaphragm may be disposed in the mask M. Nearby. Hereinafter, a sixth embodiment in which the illumination field diaphragm is arranged near the mask M will be described with reference to FIG. 31. In Fig. 31, members having the same functions as those of the above-mentioned fourth and fifth embodiments are given the same reference numerals. The third embodiment is that the illumination field diaphragm 118 shown in the fifth embodiment is disposed directly above the mask M of the illumination optical system of the fourth embodiment, specifically, the condenser optical system 117 and the mask M Between light 51 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)-n H ϋ n 1 ϋ n 一 ^ nn I nnn · 486741 A7 _______B7_ 5. Description of the invention (f) The positions of the defocus mask M in the road are defocused. Moreover, even if it is a few defocused positions from the mask M, it can still be regarded as the position of the mask M substantially. Since the illumination field diaphragm Π8 of this embodiment is the same as the fifth embodiment described above, the exposure amount of the repeated area of the workpiece W and the exposure amount of the non-repeated area can be set independently. It is needless to say that in the sixth embodiment, illumination field diaphragms 280 and 289 shown in Fig. 30 may be used. (Seventh Embodiment) Fig. 32 is a schematic configuration diagram of a projection exposure apparatus according to a seventh embodiment. In Fig. 32, the same components as those shown in the fourth to sixth embodiments are given the same reference numerals. In the seventh embodiment of FIG. 32, the difference from the sixth embodiment of FIG. 31 is that the illumination field diaphragm 118, which was originally arranged directly above the mask M, is repositioned directly above the workpiece W, that is, The position of the optical path between the projection optical system PL and the workpiece W is a few defocused positions from the workpiece W. In addition, even if the position is slightly defocused from the workpiece W, it can still be regarded as the position of the workpiece W substantially. Since the illumination field diaphragm 118 of this embodiment is the same as the fifth and sixth embodiments described above, the exposure amount of the repeated area of the workpiece W and the exposure amount of the non-repeated area can be set independently. It is needless to say that in the seventh embodiment, illumination field diaphragms 280 and 289 shown in Fig. 30 may be used. (Eighth Embodiment) Fig. 33 is a schematic configuration diagram of a projection exposure apparatus according to an eighth embodiment. In Fig. 33, the same components as those shown in the fourth to seventh embodiments are given the same reference numerals. In the eighth embodiment of Fig. 33, 52 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)-486741 A7 _ B7_____ V. Invention Note (d) that the difference from the seventh embodiment shown in FIG. 31 is that the illumination field diaphragm 118 originally arranged directly above the mask M is arranged at the intermediate image forming position of the projection optical system PL. Since the illumination field diaphragm 118 of this embodiment is the same as the above-mentioned fifth to seventh embodiments', the exposure amount of the repeated area of the work W and the exposure amount of the non-repeated area can be set independently. It is needless to say that in the eighth embodiment, the illumination field diaphragms 280, 289 shown in Fig. 30 may be used. In the sixth to eighth embodiments described above, "the same as the fifth embodiment, an illumination field diaphragm without a setting mechanism can be arranged near the focal position on the rear side of the condensing optical system 117" to the illumination field diaphragm and the mask. An illumination field diaphragm imaging optical system 119 is disposed between M. (Ninth Embodiment Feeling) Hereinafter, a ninth embodiment of the present invention will be described with reference to FIG. 34. In FIG. 34, the mask M and the workpiece W are arranged along the XY plane, the scanning direction in the XY plane is set to the χ direction, the non-scanning direction orthogonal to the χ direction is set to the Υ direction, and the orthogonal direction is set to χγ The direction of the plane is defined as the z direction. In Fig. 34, the same components as those in the fourth to eighth embodiments are given the same reference numerals. The projection exposure device of the ninth embodiment is configured by illuminating a plurality of illumination areas IAA, IAB, and IAC on the mask M with an illumination device described later, and arranging the illumination areas corresponding to the plurality of illumination areas IAA ~ IAC The plurality of projection optical systems PLA, PLB, and PLC are used to form an orthographic image of the pattern of the mask M in the plurality of illumination areas IAA to IAC in the projection areas PAA, PAB, PAC on the workpiece W. 53 This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) (Please read the precautions on the back before filling this page)

ϋ n m n n n 一 δν I I n 11 n I ϋ ϋ. I 486741 ΚΙ __Β7__ 五、發明說明（夕） 如圖35所示，投影區域PAA〜PAC在俯視上爲梯形狀 ，係讓沿著Y方向相鄰之區域彼此(例如PAA與PAB、 PAB與PAC)在X方向做既定量的位移、且相鄰區域之端 部彼此在Y方向重複般，來沿著Y方向並列配置。又，在 上述各投影光學系統PLA〜PLC也對應於各投影區域 PAA〜PAC之配置在X方向做既定量的位移且在Y方向重 複而配置著。 藉由讓該等之各投影區域PAA〜PAC在工件W上掃描 ，則在工件W上投影區域PAA所產生之曝光區域241，242 、投影區域PAB所產生之曝光區域242,243,244、以及投 影區域PAC所產生之曝光區域244,245實質上同時形成。 此處，曝光區塽241，243,245係非重複曝光區域，曝光區 域242,244係重複曝光區域。 回到圖34，光罩平台MS係藉由未圖示之驅動裝置而 在X方向移動自如。在此光罩平台MS上的端緣處，移動 鏡131a，131b係分別設置在直交方向上。於移動鏡131a係 對向配置著雷射干涉儀132a。又，於移動鏡131b係對向 配置著雷射干涉儀132b。 該等之雷射干涉儀132a，132b係分別對移動鏡 131a，131b射出單射光來量測與該移動鏡i31a，131b之間的 距離’藉以檢測出光罩平台MS在X方向之移動距離以及 掃描時的光罩平台MS之旋轉量。又，藉由雷射干涉儀 132a，132b之輸出來監測光罩平台MS之位置，對上述驅動 控制進行伺服控制，藉以將光罩平台MS移動到所需之位 54 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） --------------------訂"-------1 (請先閱讀背面之注意事項再填寫本頁) 486741 A7 ____B7_ 五、發明說明（4 ) /置。 工件平台WS係藉由未圖示之驅動裝置而分別自由移 動於X方向、Y方向、Z方向。於此工件平台WS之端緣 ，移動鏡133a，133b係分別設置在直交方向上。於移動鏡 133a係對向配置著雷射干涉儀134a。又，於移動鏡133b 係對向配置著雷射干涉儀134b。 該等之雷射干涉儀134a，134b係分別對移動鏡 133a，133b射出雷射光來量測與該移動鏡I33a，133b之間的 距離’藉以檢測出工件平台W S在X方向· γ方向之移動 距離以及掃描時的工件平台WS之旋轉量。又，藉由雷射 干涉儀134a，134b之輸出來監測工件平台WS之位置，對 上述驅動控制進行伺服控制，藉以將工件平台WS移動到 所需之位置。 其次，說明第9實施形態之照明裝置。如圖34所說明 般，第9實施形態；£照明裝置係具備：一個光源111、光 導件140(將來自該光源111的光分歧成3條）、複數之照明 光學系統(將來自光導件140之複數的射出端的光分別沿著 光軸AxA、AxB、AxC而引導至光罩Μ上之照明區域 ΙΑΑ〜IAC) 〇 又，在圖34中，僅顯示導光件140所具備之複數的 射出端當中之兩個射出端142A，142C，複數之照明光學系 統也僅顯示沿著光軸ΑχΑ配置者。惟，導光件140所具之 複數的射出端亦沿著光軸AxB，AxC來配置，於該等之光軸 AxB，AxC上係配置著與沿著光軸ΑχΑ而配置之照明光學系 55 --------tr--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 -------— B7___ 五、發明說明（Q ) /統爲等價之照明光學系統。於以下之說明中，係以沿著光 軸AXA來配置之照明光學系統作爲代表來說明，而關於光 軸AxB，AxC之照明光學系統的說明則予以省略。 於圖34中，例如由超高壓水銀燈等所構成之光源U1 係配置於橢圓鏡· 112之第1焦點位置，來自光源Π1的光 係聚光於橢圓鏡112之第2焦點位置，於該位置形成光源 像。於橢圓鏡112之第2焦點位置附近係定位著導光件 140之入射端141A。該導光件140具有任意成束之複數的 光纖’該等之光纖的入射端係匯聚爲一，射出側係形成爲 複數(在本實施形態爲3)。是以，自導光件140之入射端 141A所入射之光束係由三個射出端(在圖34僅顯示射出端 142A)均等地射出。 自導光件140之射出端142A所射出之光係透過一前 端焦點定位於該射出端142A之附近的輸入透鏡群114A而 轉換爲大致平行光束。此平行光束係通過於第4實施形態 所說明之圖案化濾光器115A，入射到複眼透鏡116A。藉 此，複眼透鏡116A之射出面係形成面光源(2次光源）。此 2次光源位置係配置著未予圖示之照明開口光闌。 來自2次光源之光係受到一前端焦點定位於形成此2 次光源之位置的聚光透鏡系統Π7Α的聚光，對於具有等 梯形狀之開口部(與照明區域IAA(投影區域PAA)爲相似形 狀)的照明視野光闌IFS進行重疊照明。 通過照明視野光闌IFS之光束係通過照明視野光闌 IFS與光罩Μ之圖案面(工件W面)呈光學性共軛之照明視 56 -----；—訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 _B7__ 五、發明說明（< ) — 野光闌成像光學系統119aA，119bA、配置於照明視野光闌 成像光學系統內之光路折射鏡FLA而到達光罩Μ上。此 .時，於光罩Μ上係形成照明視野光闌IFS之像一照明區域 ΙΑΑ。 又，在本實施形態中，與第4實施形態同樣的3組之 圖案化濾光器115Α〜115C係分別配置於沿各光軸 ΑχΑ〜AxC所配置之3組的照明光學系統內。在圖34中係 顯示沿著光軸ΑχΑ之照明光學系統中之圖案化濾光器 115Α以及沿著光軸AxC之照明光學系統(此光學系統本身 未予圖示）中之圖案化濾光器115C。 在本實施形態中，藉由進行圖案化濾光器Π5Α之位 置調整，可讓由圖35所示之投影區域PAA所曝光之重複 區域242之曝光量與非重複區域241之曝光量做獨立的連 續變動。又，藉由進行於圖34中未圖示之圖案化濾光器 115B之位置調整，可讓由圖35所示之投影區域PAB所曝 光之重複區域242,244之曝光量與非重複區域243之曝光 量做獨立的連續變動。再者，藉由進行圖34之圖案化濾光 器115C之位置調整，可讓由圖35之投影區域PAC所曝光 之重複區域244之曝光量與非重複區域245之曝光量做獨 立的連續變動。 於本實施形態中，各圖案化濾光器Π5Α〜115C之移動 量分別受到驅動裝置121之調節。是以，可將例如圖案化 濾光器Π5Α中之遮光圖案所致之遮光量與圖案化濾光器 115C中之遮光圖案所致之遮光量設定成相異的量，結果可 5Ί 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^----------------訂---------^9, (請先閱讀背面之注意事項再填寫本頁) 486741 A7 -------B7__ 五、發明說明（☆) . / · 做高精度之曝光量設定。 又，在本實施形態雖使用3組之投影光學系統，但投 影光學系統之數量（照明區域之數量、投影區域之數量）並 不限於3組，亦可使用例如5組、7組等之複數組的投影 光學系統。又，在本實施形態中，雖來自一光源的光係分 歧爲複數之光束，但光源的數量不限於1組，例如也可採 用日本專利特開平8-17223號公報或特開平10-199800號 公報所揭示般之讓來自複數之光源的光分歧爲複數之光束 者。又，作爲本實施形態中之投影光學系統，也可使用例 如特開平8-211294號公報、特開平8-255746號公報、特 開平11-329935號公報、特開2000-39557號公報所揭示者 〇 又，如本實施形態般使用複數之投影光學系統 PLA〜PLC之投影曝光裝置中，除了第4實施形態之設定機 構外，尙可使用第5〜第8實施形態所示之設定機構。 又，若將上述各實施形態之投影曝光裝置使用於液晶 顯示元件、電漿顯示面板(PDP)等之顯示元件製造的微影製 程中，作爲工件W係使用玻璃基板。又，上述各實施形態 之投影曝光裝置可適用於以下之製程。亦即，適用於作爲 工件W使用晶圓之半導體元件製造之微影製程、作爲工件 W使用稱爲低棒之棒狀基板之磁頭製造之微影製程、作爲 工件W使用環氧樹脂等之樹脂基板之印刷電路基板之微影 製程等之各種用途的微影製程上。ϋ nmnnn-δν II n 11 n I ϋ I. I 486741 ΚΙ __Β7__ V. Description of the Invention (Even) As shown in Fig. 35, the projection area PAA ~ PAC has a ladder shape in plan view, which is adjacent to each other along the Y direction. The regions (for example, PAA and PAB, PAB and PAC) are shifted in a predetermined amount in the X direction, and the ends of adjacent regions are repeated in the Y direction so as to be arranged side by side in the Y direction. In addition, each of the above-mentioned projection optical systems PLA to PLC also corresponds to the arrangement of each of the projection areas PAA to PAC, and is shifted in the X direction by a predetermined amount and repeatedly arranged in the Y direction. By scanning each of the projection areas PAA ~ PAC on the workpiece W, the exposure areas 241, 242 generated by the projection area PAA, the exposure areas 242, 243, 244 generated by the projection area PAB, and the projection area PAC are scanned on the workpiece W. The resulting exposed areas 244, 245 are formed substantially simultaneously. Here, the exposure areas 241, 243, 245 are non-repeated exposure areas, and the exposure areas 242, 244 are re-exposure areas. Returning to Fig. 34, the mask stage MS is freely movable in the X direction by a driving device (not shown). At the end edges on this reticle stage MS, the moving mirrors 131a, 131b are respectively disposed in orthogonal directions. A laser interferometer 132a is disposed opposite the moving mirror 131a. A laser interferometer 132b is disposed opposite the moving mirror 131b. The laser interferometers 132a and 132b respectively emit single light to the moving mirrors 131a and 131b to measure the distance to the moving mirrors i31a and 131b, thereby detecting the moving distance and scanning of the mask platform MS in the X direction. The amount of rotation of the photomask stage MS at this time. In addition, the position of the photomask platform MS is monitored by the output of the laser interferometers 132a and 132b, and the above-mentioned drive control is servo-controlled to move the photomask platform MS to the required position. 54 This paper standard applies Chinese national standards. (CNS) A4 specification (210 X 297 public love) -------------------- Order " ------- 1 (Please read the note on the back first Please fill in this page for matters) 486741 A7 ____B7_ V. Description of Invention (4) / Set. The workpiece stage WS is freely moved in the X direction, the Y direction, and the Z direction by a driving device (not shown). At the edges of the workpiece platform WS, the moving mirrors 133a and 133b are respectively arranged in orthogonal directions. A laser interferometer 134a is disposed opposite the moving mirror 133a. A laser interferometer 134b is disposed opposite to the moving mirror 133b. The laser interferometers 134a and 134b respectively emit laser light to the moving mirrors 133a and 133b to measure the distance from the moving mirrors I33a and 133b to detect the movement of the workpiece platform WS in the X and γ directions. The distance and the amount of rotation of the workpiece platform WS during scanning. In addition, the positions of the work platform WS are monitored by the outputs of the laser interferometers 134a and 134b, and the above-mentioned drive control is servo-controlled to move the work platform WS to a desired position. Next, a lighting device according to a ninth embodiment will be described. As shown in FIG. 34, the ninth embodiment; the lighting device includes: a light source 111, a light guide 140 (dividing light from the light source 111 into three), and a plurality of illumination optical systems (a light guide 140 The light at the plurality of emitting ends is guided along the optical axes AxA, AxB, and AxC to the illumination area ΙΑΑ ～ IAC on the mask M). Also, in FIG. 34, only the plurality of emitted light emitted by the light guide 140 is shown. Of the two emitting ends 142A, 142C, the plurality of illumination optical systems also show only those arranged along the optical axis ΑχΑ. However, the plural emitting ends of the light guide 140 are also arranged along the optical axes AxB, AxC, and on these optical axes AxB, AxC are arranged an illumination optical system 55 arranged along the optical axis AχΑ -------- tr --------- (Please read the notes on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 486741 A7 -------- B7___ V. Description of the Invention (Q) / All are equivalent equivalent lighting optical systems. In the following description, the illumination optical system arranged along the optical axis AXA is used as a representative, and the description of the illumination optical systems of the optical axes AxB and AxC is omitted. In FIG. 34, for example, a light source U1 composed of an ultra-high pressure mercury lamp is arranged at the first focus position of the elliptical mirror 112, and the light system from the light source Π1 is condensed at the second focus position of the elliptical mirror 112 at this position Form a light source image. An incident end 141A of the light guide 140 is positioned near the second focal position of the elliptical mirror 112. The light guide 140 has an arbitrary number of bundled optical fibers. The incidence ends of the optical fibers are converged into one, and the exit side is formed into a plurality (in this embodiment, 3). Therefore, the light beams incident from the incident end 141A of the light guide 140 are uniformly emitted from the three exit ends (only the exit end 142A is shown in FIG. 34). The light emitted from the output end 142A of the light guide 140 is converted into a substantially parallel light beam through an input lens group 114A whose front end is positioned near the output end 142A. This parallel light beam passes through the patterned filter 115A described in the fourth embodiment and enters the fly-eye lens 116A. Accordingly, the exit surface of the fly-eye lens 116A forms a surface light source (secondary light source). The secondary light source position is provided with an illumination aperture stop (not shown). The light from the secondary light source is condensed by a condenser lens system Π7A whose front-end focus is positioned at the position where the secondary light source is formed. It is similar to an opening with a stepped shape (similar to the lighting area IAA (projection area PAA)) Shape) illumination field diaphragm IFS for overlapping illumination. The light beam passing through the illumination field diaphragm IFS is an illumination field 56 which is optically conjugated to the pattern surface (workpiece W surface) of the mask M through the illumination field diaphragm IFS. --- (Please read the notes on the back before filling out this page) This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 486741 A7 _B7__ 5. Description of the invention (<) — Wild diaphragm The imaging optical systems 119aA, 119bA, and the light path refraction mirror FLA arranged in the illumination field diaphragm imaging optical system reach the mask M. At this time, an illumination area IAA is formed on the reticle M as an illumination field diaphragm IFS. In this embodiment, three sets of patterned filters 115A to 115C similar to those in the fourth embodiment are respectively arranged in three groups of illumination optical systems arranged along respective optical axes AXA to AxC. Fig. 34 shows the patterned filter 115A in the illumination optical system along the optical axis AxA and the patterned filter in the illumination optical system (the optical system itself is not shown) along the optical axis AxC 115C. In this embodiment, by adjusting the position of the patterned filter Π5A, the exposure amount of the repeating area 242 exposed by the projection area PAA shown in FIG. 35 and the exposure amount of the non-repeating area 241 can be made independent. Continuous change. In addition, by adjusting the position of the patterned filter 115B (not shown in FIG. 34), the exposure amount of the repeating areas 242, 244 and the non-repeating area 243 exposed by the projection area PAB shown in FIG. 35 can be exposed. The amount makes independent continuous changes. Furthermore, by adjusting the position of the patterned filter 115C of FIG. 34, the exposure amount of the repeating area 244 exposed by the projection area PAC of FIG. 35 and the exposure amount of the non-repeating area 245 can be independently and continuously changed. . In this embodiment, the movement amount of each of the patterned filters Π5A to 115C is adjusted by the driving device 121, respectively. Therefore, for example, the amount of shading caused by the shading pattern in the patterned filter Π5A and the amount of shading caused by the shading pattern in the patterned filter 115C can be set to different amounts. Applicable to China National Standard (CNS) A4 (210 X 297 mm) ^ ---------------- Order --------- ^ 9, (Please read first Note on the back, please fill in this page again) 486741 A7 ------- B7__ 5. Description of the invention (☆). / · Make high-precision exposure settings. Moreover, although three sets of projection optical systems are used in this embodiment, the number of projection optical systems (the number of illumination areas and the number of projection areas) is not limited to three, and plural numbers such as five groups and seven groups may be used. Set of projection optical systems. In this embodiment, although the light system from one light source is divided into a plurality of light beams, the number of light sources is not limited to one group. For example, Japanese Patent Application Laid-Open No. 8-17223 or Japanese Patent Application Laid-Open No. 10-199800 As disclosed in the bulletin, the light from a plurality of light sources is divided into a plurality of light beams. In addition, as the projection optical system in this embodiment, for example, those disclosed in JP-A-8-211294, JP-A-8-255746, JP-A-11-329935, and JP-A2000-39557 can also be used. 〇 In the projection exposure apparatus using plural projection optical systems PLA to PLC as in this embodiment, in addition to the setting mechanism of the fourth embodiment, the setting mechanisms shown in the fifth to eighth embodiments can be used. When the projection exposure apparatus according to each of the above embodiments is used in a lithography process for manufacturing a display element such as a liquid crystal display element or a plasma display panel (PDP), a glass substrate is used as the workpiece W. The projection exposure apparatus of each of the above embodiments can be applied to the following processes. That is, it is suitable for a lithography process for manufacturing a semiconductor element using a wafer as a workpiece W, a lithography process for manufacturing a magnetic head using a rod-shaped substrate called a low rod as the workpiece W, and a resin such as epoxy resin as the workpiece W Substrate lithography process for various uses such as lithography process of printed circuit board.

又，在上述之各實施形態中，作爲投影光學系統PL 58 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -In each of the above-mentioned embodiments, as the projection optical system PL 58, the paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page)-

-f^i n 1 ·ϋ n m 一 δγ n ϋ— ϋ m n ϋ— n I 486741 A7 _________B7_____ 五、發明說明（A ) 雖採用形成等倍之正立正像者，但投影光學系統之倍率也 可爲縮小倍率或是放大倍率。 又，在上述各實施形態中，作爲光學積分器雖使用可 形成由實像所構成之複數光源像之複眼透鏡，惟亦可使用 可形成由虛像所構成之複數光源像之內面反射型積分器(棒 型積分器、光纖、光隧道）。 (元件製造方法之說明） 以下就元件製造方法來說明。於以下之說明中，係針 對藉由在平板（玻璃基板）上形成既定之電路圖案來得到作 爲微元件之液晶顯示元件來描述。以下，就此時之動作的 —例參照圖36之流程圖來說明。 於圖36中，在圖案形成製程501中，係實行使用例 如第4〜第9之任一實施形態之曝光裝置將光罩之圖案轉寫 曝光到作爲工件之感光性基板(塗佈有光阻劑之玻璃基板等 )的所謂光微影製程。藉由此光微影製程，可於感光性基板 上形成包含多數之電極等之既定圖案。 之後，經過曝光之基板係藉由顯像製程、蝕刻製程、 光柵剝離製程等之各製程，於基板上會形成既定之圖案， 而接著移往下一濾色器形成製程502。 在濾色器形成製程502中，對應於R(Red)、G(Green) ' B(Bhie)之三點狀物之組係形成以矩陣狀多數配置之濾色 器。接著，在濾色器形成製程502之後，實行元件組裝製 程 503。 在元件組裝製程503中，係利用在圖案形成製程501 59 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)-f ^ in 1 · ϋ nm-δγ n ϋ— ϋ mn ϋ— n I 486741 A7 _________B7_____ V. Description of the Invention (A) Although an equal erect image is used, the magnification of the projection optical system can be reduced. Magnification or magnification. In each of the above embodiments, although a compound eye lens capable of forming a complex light source image composed of a real image is used as the optical integrator, an internal reflection type integrator capable of forming a complex light source image composed of a virtual image may be used. (Rod integrator, optical fiber, light tunnel). (Explanation of a component manufacturing method) The component manufacturing method is demonstrated below. In the following description, a liquid crystal display element as a micro element is obtained by forming a predetermined circuit pattern on a flat plate (glass substrate). Hereinafter, an example of the operation at this time will be described with reference to the flowchart of FIG. 36. In FIG. 36, in the pattern forming process 501, the pattern of the photomask is transferred and exposed on a photosensitive substrate (a photoresist is coated) using an exposure device of any of the fourth to ninth embodiments. Glass substrate, etc.). By this photolithography process, a predetermined pattern including a large number of electrodes and the like can be formed on a photosensitive substrate. After that, the exposed substrate is formed by a process such as a development process, an etching process, and a grating lift-off process. A predetermined pattern is formed on the substrate, and then it is moved to the next color filter forming process 502. In the color filter forming process 502, a set of three dots corresponding to R (Red), G (Green) 'B (Bhie) is formed as a color filter arranged in a matrix. Next, after the color filter forming process 502, a component assembly process 503 is performed. In the component assembly process 503, the pattern forming process 501 59 is used. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page)

486741 A7 ___B7 ____ 五、發明說明) 所得之具有既定圖案之基板以及在濾色器形成製程502所 得之濾色器等來組裝液晶面板（液晶單元）。在單元組裝製 程503中，例如對於具有圖案形成製程50所得之既定圖案 的基板、藉濾色器形成製程502所得之瀘色器之間注入液 晶，來製造液晶面板(液晶單元）。 之後，藉由模組組裝製程504，將用以進行所組裝之 液晶面板（液晶單元）之顯示動作的電氣電路、背光件等之 各構件加以組合而成爲液晶顯示元件。 依據以上之製造方法，藉由進行縫合曝光（接合曝光) 來製造大面積之元件之際，由於在接合部分(重複曝光區域 )也可得到高精度之圖案，所以即使工件大型化仍可製造良 好之元件(半導體元件、液晶顯示裝置、薄膜磁頭等）。 上述之實施形態，其用意不過是在彰顯本發明之技術 內容，本發明並不會受限於上述實施態樣而被做狹義的解 釋，只要在本發明之精神與申請專利範圍所描述之範圍內 ，也可做各種的變形。 [發明之效果] 如以上所述，依據申請專利範圍第1〜20項之本發明 的曝光方法及曝光裝置’進行畫面合成而形成大面積之曝 光區域時，不僅是非接合部分（非重複曝光區域）即使是接 合部分(重複曝光區域)皆可得到高精度之圖案。 有關申請專利範圍第21項之曝光裝置，照度調節裝置 係配置在光學積分器之與光罩的共軛面上來調節重複曝光 部分之照度’移動裝置係讓照度調節裝置移動於共轭面內 60 t紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -- (請先閱讀背面之注意事項再填寫本頁)486741 A7 ___B7 ____ 5. Description of the invention) The obtained substrate with a predetermined pattern and the color filters obtained in the color filter forming process 502 are used to assemble a liquid crystal panel (liquid crystal cell). In the cell assembly process 503, for example, a liquid crystal panel (liquid crystal cell) is manufactured by injecting liquid crystal between a substrate having a predetermined pattern obtained by the pattern forming process 50 and a color filter obtained by the color filter forming process 502. After that, in the module assembly process 504, the components such as the electric circuit and the backlight for performing the display operation of the assembled liquid crystal panel (liquid crystal cell) are combined to form a liquid crystal display element. According to the above manufacturing method, when stitching exposure (bonding exposure) is used to manufacture a large-area element, a high-precision pattern can also be obtained at the bonding portion (repeated exposure area), so it can be manufactured well even if the workpiece is enlarged. Devices (semiconductor devices, liquid crystal display devices, thin-film magnetic heads, etc.). The above-mentioned embodiments are only intended to highlight the technical content of the present invention. The present invention is not limited to the above-mentioned embodiments and is to be interpreted in a narrow sense, as long as it is within the scope described in the spirit of the present invention and the scope of patent applications Inside, various deformations can also be made. [Effects of the Invention] As described above, when a large-area exposed area is formed by combining the exposure method and the exposure device of the present invention according to claims 1 to 20 of the application scope, not only the non-joined portion (non-repeated exposure area) ) High precision patterns can be obtained even at the joints (repeated exposure areas). Regarding the exposure device for patent application No. 21, the illuminance adjustment device is arranged on the conjugate surface of the optical integrator and the photomask to adjust the illuminance of the repeated exposure part. The moving device allows the illuminance adjustment device to move within the conjugate surface 60 tThe paper size applies to China National Standard (CNS) A4 (210 x 297 mm)-(Please read the precautions on the back before filling this page)

Lf n ·ϋ n n n n n f n a— n flu an «ϋ in I # 486741 A7 _____B7____ 五、發明說明（A ). 。藉此，就此曝光裝置而言，即使在基板上讓光罩之圖案 部分重疊來進行曝光，由於此時可使得非重複曝光部分與 重複曝光部分之光阻劑的化學反應量相同，乃可讓在各部 分受到曝光之圖案彼此以幾乎同一線寬同一形狀來曝光， 對於以任何化學反應量所曝光之基板皆可抑制條斑的發生 以防止元件之品質降低，此爲效果所在。 有關申請專利範圍第22項之曝光裝置，照度調節裝置 具有依據重複曝光部分之圖案之像輪廓而將曝光用光遮光 之遮光部。藉此，此曝光裝置可依據圖案之像輪廓讓光阻 劑之化學反應量均一化，可曝光形成線寬與膜厚爲一定之 圖案，此爲效果所在。 有關申請專利範圍第23項之曝光裝置，遮光部具有自 重複曝光部分之中央往非重複曝光部分逐漸縮徑之輪廓形 狀。 藉此，此曝光裝置即使以重複曝光部分之中央照度功 率成爲最大之功率分布受到曝光之際，仍可讓此曝光所致 之光阻劑之化學反應量均一化，可曝光形成線寬與膜厚爲 一定之圖案，此爲效果所在。 有關申請專利範圍第24項之曝光裝置，移動裝置係移 動遮光部來使得遮光部之形狀變形。 藉此，此曝光裝置可利用遮光部的變形來調整由光學 積分器所形成之光源像的遮光量，使得非重複曝光部分與 重複曝光部分之光阻劑的化學反應量成爲相同之效果。 有關申請專利範圍第25項之曝光裝置，儲存裝置係事 61 (請先閱讀背面之注意事項再填寫本頁) I— n n ^1· n i 一 δτ * I ϋ n flu —ϋ ·ϋ < 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 ______ B7 _ 五、發明說明（W ) 先將依據基板上之圖案的像輪廓所求出之形狀加以儲存， 控制裝置則依據儲存裝置所儲存之形狀來控制移動裝置。 藉此’此曝光裝置不需計算曝光處理中之遮光部的形 狀而可迅速將照度調節裝置移動到適當的位置，對生產量 之提昇做出貢獻，此爲效果所在。 有關申請專利範圍第26項之曝光裝置，移動裝置係用 以將照度調節裝置與光學積分器之相對位置關係做調整。 藉此’此曝光裝置可調整由光學積分器所形成之光源 像的遮光量’使得對於非重複曝光部分與重複曝光部分所 給予之曝光能量成爲相同，此爲效果所在。 有關申請專利範圍第27項之曝光裝置，儲存裝置係事 先將依據基板上之圖案的像輪廓所求出之相對位置關係加 以儲存’控制裝置則依據儲存裝置所儲存之相對位置關係 來控制移動裝置。 藉此’此曝光裝置不需計算曝光處理中之遮光部的位 置而可迅速將照度調郁裝置移動到適當的位置，對生產量 之提昇做出貢獻，此爲效果所在。 有關申請專利範圍第28項之曝光裝置，照度檢測裝置 係檢測出重複曝光部分之照度與重複曝光部分以外之照度 ’控制裝置依據照度檢測裝置之檢測結果來控制移動裝置 〇 藉此，可迅速且輕易地調節重複曝光部分之照度與重 複曝光部分以外之照度，此爲所具效果。 有關申請專利範圍第29項之曝光裝置，曝光係於光罩 62 本纸張尺度適用中國國家標準（CNS0A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---------‘ 486741 A7 _____ B7____ 五、發明說明（Μ ) 與基板之同步移動中所進行者。 藉此，就此曝光裝置而言，即使將光罩之圖案逐步曝 光於基板上、即進行所謂的掃描曝光，仍可讓在各部分受 到曝光之圖案彼此以幾乎同一線寬同一形狀來曝光，可防 止元件之品質降低，此爲效果所在。 有關申請專利範圍第30項之曝光裝置，曝光係採用配 置於光罩與基板之間的複數之投影光學系統來進行。 藉此，就此曝光裝置而言，即使由投影光學系統所投 影之圖案像係部分重複受到曝光，此時在非重複曝光部分 與重複曝光部分受到曝光之圖案彼此能以幾乎同一線寬同 一形狀來曝光，可防止元件之品質降低，此爲效果所在。 有關申請專利範圍第31項之曝光裝置，複數之投影光 學系統係讓投影區域之一部分重複來配置。 藉此，就此曝光裝置而言，即使以所謂之複透鏡方式 來曝光之際，各投影光學系統之投影區域成重複之部分與 非重複之部分所曝光之圖案彼此能以幾乎同一線寬同一形 狀來曝光，可防止元件之品質降低，此爲效果所在。 有關申請專利範圍第32項之曝光方法，係包含以下之 順序。亦即，於光學積分器之與光罩的共軛面配置用以調 節重複曝光部分之照度的照度調節裝置之步驟、以及讓照 度調節裝置在共軛面內移動之步驟。 藉此，就此曝光方法而言，即使在基板上讓光罩之圖 案部分重疊來進行曝光，由於此時可讓供給於非重複曝光 部分與重複曝光部分之曝光能量相同，乃可讓在各部分受 63 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --ϋ n el n n n n」：OJI ϋ ϋ n n n n I . 486741 A7 _ —- ____B7_ 五、發明說明（^ ) 到曝光之圖案彼此以幾乎同一線寬同一形狀來曝光，對於 以任何曝光量所曝光之基板皆可抑制條斑的發生以防止元 件之品質降低，此爲效果所在。 有關申請專利範圍第33項之曝光方法，係藉由照度調 節裝置之移動來調整照度調節裝置與光學積分器之相對位 置關係的順序。 藉此’此曝光方法藉著將由光學積分器所形成之光源 像的遮光量加以調整，可使得非重複曝光部分與重複曝光 部分之光阻劑的化學反應量相同，此爲效果所在。 [圖式之簡單說明] 圖1所示係本發明之實施形態之圖，其顯示曝光裝置 之槪略構成之外觀立體圖。 圖2係設有圖案化濾光器之曝光裝置之槪略構成圖。 圖3係於同曝光裝置所設之(a)複眼透鏡之俯視圖，（b) 部分放大圖。‘ 圖4所示係本發明之第1實施形態之圖，爲一配置著 圖案化濾光器之遮光圖案的俯視圖。 圖5所示係中央位置之複眼透鏡與遮光圖案之關係的 俯視圖。 圖6所示係遮光位置之複眼透鏡與遮光圖案之關係的 俯視圖。 圖7所示係複眼透鏡與圖案化濾光器之組裝構成之截 面圖。 圖8係圖7之部分側視圖。 64 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Lf n · ϋ n n n n f n a— n flu an «ϋ in I # 486741 A7 _____B7____ 5. Description of the Invention (A). With this, in this exposure device, even if the pattern portion of the photomask is overlapped on the substrate for exposure, since the chemical reaction amount of the photoresist in the non-repeated exposure portion and the re-exposed portion can be the same, it can make the The patterns exposed at each part are exposed with almost the same line width and the same shape to each other. For the substrate exposed by any chemical reaction amount, the occurrence of streaks can be suppressed to prevent the quality of the element from being reduced. This is the effect. Regarding the exposure device in the scope of application for patent No. 22, the illuminance adjustment device has a light-shielding portion that shields the light for exposure according to the image contour of the pattern of the repeatedly exposed portion. With this, the exposure device can uniformize the chemical reaction amount of the photoresist according to the image contour of the pattern, and can form a pattern with a certain line width and film thickness through exposure, which is the effect. Regarding the exposure device of the scope of application for patent No. 23, the light-shielding portion has a contour shape that gradually decreases in diameter from the center of the repeated exposure portion to the non-repeated exposure portion. With this, even when the exposure device is exposed with the power distribution of the central illuminance power of the repeated exposure part being the largest, the chemical reaction amount of the photoresist caused by the exposure can be uniformized, and the line width and film can be formed by exposure. The thickness is a certain pattern, which is the effect. Regarding the exposure device of the scope of application for patent No. 24, the moving device moves the light shielding portion to deform the shape of the light shielding portion. Therefore, the exposure device can adjust the light-shielding amount of the light source image formed by the optical integrator by using the deformation of the light-shielding portion, so that the chemical reaction amount of the photoresist in the non-repeated exposure portion and the repeatedly exposed portion becomes the same effect. Regarding the exposure device for the scope of application for patent No. 25, the storage device is a matter of 61 (please read the precautions on the back before filling this page) I— nn ^ 1 · ni a δτ * I ϋ n flu —ϋ · ϋ < this Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 486741 A7 ______ B7 _ 5. Description of the invention (W) The shape obtained from the image contour of the pattern on the substrate is stored first, the control device The mobile device is controlled based on the shape stored by the storage device. This means that this exposure device can quickly move the illuminance adjustment device to an appropriate position without calculating the shape of the light-shielding portion in the exposure process, which contributes to the improvement of the throughput. This is the effect. Regarding the exposure device under the scope of application for patent No. 26, the mobile device is used to adjust the relative positional relationship between the illumination adjusting device and the optical integrator. This 'this exposure device can adjust the light-shielding amount of the light source image formed by the optical integrator' so that the exposure energy given to the non-repeated exposure portion and the re-exposed portion becomes the same, which is the effect. Regarding the exposure device for patent application No. 27, the storage device stores the relative position relationship obtained from the image contour of the pattern on the substrate in advance. The control device controls the mobile device based on the relative position relationship stored by the storage device. . This means that this exposure device can quickly move the illuminance adjusting device to an appropriate position without calculating the position of the light-shielding portion in the exposure process, which contributes to the improvement of the throughput. This is the effect. Regarding the exposure device under the scope of application for patent No. 28, the illuminance detection device detects the illuminance of the repeated exposure portion and the illuminance other than the repeated exposure portion. The control device controls the mobile device based on the detection result of the illuminance detection device. Easily adjust the illuminance of the repeatedly exposed portion and the illuminance other than the repeatedly exposed portion, which is an effect. Regarding the exposure device for the scope of patent application No. 29, the exposure is on the reticle 62 This paper size is applicable to the Chinese national standard (CNS0A4 specification (210 X 297 mm)) (Please read the precautions on the back before filling this page) Order- -------- '486741 A7 _____ B7____ 5. The description of the invention (M) is performed during the synchronous movement with the substrate. Thus, as far as this exposure device is concerned, even if the pattern of the photomask is gradually exposed on the substrate That is, the so-called scanning exposure can still allow the patterns exposed in each part to be exposed with almost the same line width and the same shape to each other, which can prevent the degradation of the quality of the element, which is the effect. The exposure of the 30th scope of the related patent application Device, the exposure is performed by using a plurality of projection optical systems arranged between the mask and the substrate. Thus, as far as this exposure device is concerned, even if the pattern image projected by the projection optical system is repeatedly exposed, at this time in The non-repeatedly exposed part and the repeatedly exposed part can be exposed to each other with almost the same line width and the same shape, which can prevent the quality of the element from being lowered. Regarding the exposure device of the 31st scope of the patent application, the plurality of projection optical systems are configured by duplicating a part of the projection area. Therefore, even when the exposure device is exposed by the so-called double lens method, The pattern exposed by the repeated and non-repeated portions of the projection area of each projection optical system can be exposed with almost the same line width and the same shape to each other, which can prevent the degradation of the quality of the element, which is the effect. The exposure method of the item includes the following sequence. That is, the steps of disposing the illuminance adjusting device for adjusting the illuminance of the repeated exposure portion on the conjugate surface of the optical integrator and the photomask, and placing the illuminance adjusting device on the conjugate surface. Step of in-plane movement. Therefore, in this exposure method, even if the pattern portion of the photomask is overlapped on the substrate for exposure, since the exposure energy supplied to the non-repeated exposure portion and the re-exposed portion can be the same, It is allowed to accept 63 paper sizes in each part. The standard of China National Standards (CNS) A4 (210 X 297 mm) is applicable. ) (Please read the notes on the back before filling this page) --ϋ n el nnnn ”: OJI ϋ ϋ nnnn I The same shape is used for exposure, and it is effective to suppress the occurrence of streaks on substrates exposed at any exposure amount to prevent the degradation of the quality of the element. This is the effect of the exposure method of the 33rd patent application scope, which is adjusted by illumination. The movement of the device adjusts the order of the relative positional relationship between the illuminance adjustment device and the optical integrator. By this, 'this exposure method can adjust the light-shielding amount of the light source image formed by the optical integrator to make non-repeated exposure parts and repeat The chemical reaction amount of the photoresist in the exposed part is the same, which is the effect. [Brief description of the drawings] FIG. 1 is a diagram showing an embodiment of the present invention, and shows an external perspective view of a schematic configuration of an exposure device. FIG. 2 is a schematic configuration diagram of an exposure device provided with a patterned filter. FIG. 3 is a top view of (a) a fly-eye lens provided in the same exposure device, and an enlarged view of (b). ‘FIG. 4 is a view showing a first embodiment of the present invention, and is a plan view of a light shielding pattern in which a patterned filter is arranged. Fig. 5 is a plan view showing the relationship between the fly-eye lens and the shading pattern at the center position. Fig. 6 is a plan view showing the relationship between the fly-eye lens and the light-shielding pattern in the light-shielding position. Fig. 7 is a cross-sectional view showing an assembly structure of a fly-eye lens and a patterned filter. FIG. 8 is a partial side view of FIG. 7. 64 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

486741 A7 ______B7__ 五、發明說明（b)) I® 9所示係以固定小螺釘所締結固定之支撐板與移動 台的位置關係之前視圖。 圖10係將移動台做Y方向微調之微調部之要部放大 圖。 圖Π係微調部之微調所使用之定位用工具之前視圖。 w 12係將金屬件做β方向微調之微調部的要部之放大 圖。 圖13係於移動台之長孔部嵌合偏心凸輪之要部放大圖 〇 圖Μ所示係本發明之第2實施形態之圖，爲中央位置 之複眼透鏡與遮光圖案的關係之俯視圖。 Μ 15所示係遮光位置之複眼透鏡與遮光圖案之關係圖 〇 圖16(a)係遮光圖案配置在未將接合部遮光之位置， (b)、（c)係將遮光圖案配置在將接合部遮光之位置之部分放 大圖。 圖17(a)係投影區域與劑量之關係圖，（b)係有關線寬 之齊J量與圖案之像輪廓的關係特性圖，（c)係有關膜厚之劑 量與圖案之像輪廓的關係特性圖。 I 18所示係遮光圖案之旋轉角與相對於接合部之遮光 區域的關係圖，（a)、（b)係遮光區域位於接合部之圖，（c)係 遮光區域並不位於接合部之圖。 圖19(a)係遮光圖案變形爲不致將接合部遮光之形狀， (b) ' (cM系遮光圖案變形爲將接合部遮光之形狀之部分放大 65 ί紙張尺度適用中國國家標準（CNS)A4規格（21了^97公爱^ -- (請先閱讀背面之注意事項再填寫本頁) --------^------^---. 486741 A7 _____Β7_ 五、發明說明) 圖。 圖20所示係本發明之另一實施形態之圖，其顯示單一 之投影區域與玻璃基板之俯視圖。 圖21所示係液晶顯示元件之製程之一例的流程圖。 圖22係在玻璃基板上設定複數之投影區域之俯視圖。 圖23係有關本發明之第4實施形態之曝光裝置之槪略 構成圖。 圖24係用以說明第4實施形態之曝光裝置之曝光區域 之一*例的圖。 圖25所示係第4實施形態之設定機構之一例的圖。 圖26係用以說明第4實施形態之設定機構之動作的圖 ，圖26(A)所示係非插入狀態，圖26(B)係插入狀態。 圖27所示係第4實施形態之曝光量分布圖，圖27(A) 係顯示經過1次之掃描曝光之曝光量分布，圖27(B)係顯 示經過2次之掃描曝光(接合曝光)之曝光量分布。 圖28所示係有關第4實施形態之變形例之設定機構之 一例之圖，圖28(A)所示係與光學積分器之位置關係之立 體圖，圖28(B)係俯視圖。 圖29係有關本發明之第5實施形態之曝光裝置之槪略 構成圖，圖29(A)係顯示裝置全體之俯視圖，圖29(B)係顯 示設定機構之俯視圖。 圖30係有關第5實施形態之變形例之設定機構的槪略 構成圖。 圖31係有關第6實施形態之變形例之設定機構的槪略 66 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------tr--------- (請先閱讀背面之注意事項再填寫本頁) 486741486741 A7 ______B7__ V. Description of the invention (b)) The front view of the positional relationship between the support plate and the mobile station fixed by the fixing screws shown in I® 9 is shown. Fig. 10 is an enlarged view of a main part of a fine-tuning part for fine-tuning the mobile station in the Y direction. Figure Π is a front view of a positioning tool used for the fine adjustment of the fine adjustment section. w 12 is an enlarged view of the main part of the fine-tuning part with the metal part fine-tuned in the β direction. Fig. 13 is an enlarged view of a main part of an eccentric cam fitted to a long hole portion of a mobile table. Fig. M is a view showing a second embodiment of the present invention, and is a plan view showing the relationship between a fly-eye lens and a light-shielding pattern at a central position. Figure 15 shows the relationship between the fly-eye lens and the light-shielding pattern in the light-shielding position. Figure 16 (a) shows the light-shielding pattern at a position where the joint is not shielded, and (b) and (c) show the light-shielding pattern at the joint. A partially enlarged view of the location where the light is blocked. Figure 17 (a) is the relationship between the projection area and the dose, (b) is the relationship between the line width and the amount of J and the contour of the image, and (c) is the relationship between the dose of the film and the contour of the image. Relationship characteristic diagram. I 18 shows the relationship between the rotation angle of the light-shielding pattern and the light-shielding area with respect to the joint. (A) and (b) are diagrams where the light-shielding area is located at the joint, and (c) the light-shielding area is not located at the joint. Illustration. Figure 19 (a) The light-shielding pattern is deformed into a shape that does not block the joint, and (b) '(cM light-shielding pattern is deformed to enlarge the part that blocks the shape of the joint 65. ί The paper size applies Chinese National Standard (CNS) A4 Specifications (21 ^ 97 public love ^-(Please read the precautions on the back before filling out this page) -------- ^ ------ ^ ---. 486741 A7 _____ Β7_ V. Invention (Illustration). FIG. 20 is a view showing another embodiment of the present invention, which shows a top view of a single projection area and a glass substrate. FIG. 21 is a flowchart of an example of a manufacturing process of a liquid crystal display element. A plan view of a plurality of projection areas set on a glass substrate. Fig. 23 is a schematic configuration diagram of an exposure device according to a fourth embodiment of the present invention. Fig. 24 is one of the exposure areas for explaining the exposure device of the fourth embodiment. * A diagram of an example. FIG. 25 is a diagram showing an example of a setting mechanism of the fourth embodiment. FIG. 26 is a diagram for explaining the operation of the setting mechanism of the fourth embodiment. FIG. 26 (A) is a non-insertion Fig. 26 (B) shows the inserted state. Fig. 27 shows the exposure amount of the fourth embodiment. Layout, Figure 27 (A) shows the exposure amount distribution after one scanning exposure, and Figure 27 (B) shows the exposure amount distribution after 2 scanning exposures (joint exposure). Figure 28 shows the related Fig. 28 (A) is a perspective view showing a positional relationship with an optical integrator, and Fig. 28 (B) is a plan view. Fig. 29 is a view showing a fifth embodiment of the present invention. FIG. 29 (A) is a plan view showing the entire display device, and FIG. 29 (B) is a plan view showing a setting mechanism. FIG. 30 is a view showing a setting mechanism of a modification of the fifth embodiment. Figure 31 is a schematic diagram of a setting mechanism concerning a modification of the sixth embodiment. 66 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------- tr --------- (Please read the notes on the back before filling this page) 486741

五、發明說明（β 構成圖 圖32係有關第7實施形態之變形例之設定機構的槪略 構成圖。 圖33係有關第8實施形態之變形例之設定機構的槪略 構成圖。 圖34係有關第9實施形態之變形例之設定機構的槪略 構成圖。 圖35係用以說明第9實施形態之曝光裝置之曝光區域 的一例之圖。 圖36所示係元件製造方法之一例的流程圖。 圖37(a)係顯示兩個投影區域，（b)係投影區域與曝光 量之關係圖，（(〇係投影區域與圖案像輪廓之關係特性圖。 圖38所示係長方形部所曝光之圖案以及接合部所曝°、， 之圖案的部分截面圖。 "" ^ 圖39係發生條斑之玻璃基板的俯視圖。 [符號說明] (請先閱讀背面之注意事項再填寫本頁) ·. 1 曝光裝置 3 投影光學系統 3a 〜3e 投影系統模組 14 複眼透鏡 17 控制裝置 41 偵測器(照度檢測裝置) 51 馬達(移動裝置） 52 偏心凸輪 67 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 486741 A7 B7 五、發明說明（) 111 光源 115 圖案化濾光器(設定機構） 116 複眼透鏡(光學積分器） Μ 光罩(光柵） W 工件 J 接合部 Ρ 玻璃基板 PF 圖案化濾光器(照度調節裝置) SP1 、 SP2 、 SP3 遮光圖案(遮光部） Τ 長方形部(非重複曝光部分） 68 (請先閱讀背面之注意事項再填寫本頁)V. Description of the Invention (β Configuration Diagram FIG. 32 is a schematic configuration diagram of a setting mechanism related to a modification of the seventh embodiment. FIG. 33 is a schematic configuration diagram of a setting mechanism related to a modification of the 8th embodiment. FIG. 34 FIG. 35 is a schematic configuration diagram of a setting mechanism related to a modification of the ninth embodiment. FIG. 35 is a diagram for explaining an example of an exposure area of an exposure apparatus according to the ninth embodiment. FIG. 36 shows an example of a device manufacturing method. Flow chart. Figure 37 (a) shows two projection areas, (b) is a relationship diagram between the projection area and the exposure amount, and ((0 is a relationship characteristic diagram between the projection area and the pattern image contour. Figure 38 is a rectangular portion Partial cross-sectional view of the pattern exposed and the pattern exposed at the junction. ^ Figure 39 is a top view of a streaked glass substrate. [Symbol description] (Please read the precautions on the back before filling (This page) ·. 1 exposure device 3 projection optical system 3a ~ 3e projection system module 14 fly-eye lens 17 control device 41 detector (illumination detection device) 51 motor (moving device) 52 eccentric cam 67 paper ruler Applicable to China National Standard (CNS) A4 (210 X 297 mm) 486741 A7 B7 V. Description of the invention () 111 Light source 115 Patterned filter (setting mechanism) 116 Fly-eye lens (optical integrator) Μ Mask (grating) ) W Workpiece J Bonding section P Glass substrate PF Patterned filter (illumination adjustment device) SP1, SP2, SP3 Light-shielding pattern (light-shielding section) T Rectangular section (non-repeated exposure section) 68 (Please read the precautions on the back first (Fill in this page)

r-------1 訂---------I 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）r ------- 1 Order --------- I This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

486741 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 1·一種曝光方法，係爲了在工件上對周邊部呈部分重 疊之複數的區域分別轉寫圖案，乃透過可緩緩減少在前述 週邊部之曝光量的設定機構以能束進行前述各區域之掃描 曝光；其特徵在於， 前述呈部分重疊之區域的曝光量、與該重疊區域爲相 異之區域的曝光量係可獨立設定，且可做連續的調整。 2·—種曝光方法，係爲了在工件上對周邊部呈部分重 疊之複數的區域分別轉寫圖案，乃透過可緩緩減少在前述 週邊部之曝光量的設定機構以能束進行前述各區域之掃描 曝光；其特徵在於， 前述複數的區域係包含在前述工件上實質上同時形成 之第1區域與第2區域； 前述第1與第2區域呈重疊之重複曝光區域的曝光量 、與該重複曝光區域爲相異之區域的曝光量係獨立來設定 〇 3.—種曝光方法，係爲了在工件上對周邊部呈部分重 疊之複數的區域分別轉寫圖案，乃透過可緩緩減少在前述 週邊部之曝光量的設定機構以能束進行前述各區域之掃描 曝光；其特徵在於， 前述工件係被來自實像或虛像所構成之複數的光源像 之能束所重疊照射； 前述設定機構係配置於：與來自前述複數之光源像的 複數之能束的光路中至少兩個光路對應之光路中之和前述 工件呈光學共軛的位置。 -------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 486741 A8 B8 C8 D8 六、申請專利範圍. 4.如申請專利範圍第3項之曝光方法，其中，前述呈 部分重疊之區域的曝光量、與該重疊區域爲相異之區域的 曝光量係獨立來設定。 5·如申請專利範圍第3或第4項之曝光方法，其中， 前述呈部分重疊之區域的曝光量係可連續設定。 6. 如申請專利範圍第1、3或4項之曝光方法，其中， 前述複數的區域係包含在前述工件上實質上同時形成之第 1區域與第2區域； 前述設定機構係用以設定前述第1與第2區域呈重疊 之重複曝光區域的曝光量。 7. 如申請專利範圍第1〜4項中任一項之曝光方法，其 中，前述設定機構係爲了控制前述呈部分重疊區域之前述 轉寫之圖案的輪廓而設定前述呈部分重疊區域的前述曝光 量。 8. 如申請專利範圍第7項之曝光方法，其中，前述設 定機構係以讓前述呈部分重疊之區域的前述輪廓、與前述 呈部分重疊之區域爲相異之區域的輪廓成爲大致同一輪廓 的方式來設定前述曝光量。 9. 如申請專利範圍第7項之曝光方法，其中，前述圖 案之輪廓係包含前述圖案的線寬。 1〇·如申請專利範圍第1〜4項中任一項之曝光方法，其 中，前述複數之區域係包含在前述工件上實質上同時形成 之第1區域、第2區域、以及第3區域； 前述設定機構係將對於前述第1與第2區域呈重疊之 2 ·」· §_1 n ϋ· n n n n ^ ^ n ·ϋ em§ mmm§ i Ban 1 I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 486741 A8 B8 C8 D8___ 六、申請專利範圍 第1重複曝光區域的曝光量、對於前述第2與第3區域呈 重疊之第2重複曝光區域的曝光量彼此獨立地來設定。 11·一種曝光裝置，係爲了在工件上對周邊部呈部分重 疊之複數的區域分別轉寫圖案，乃透過可緩緩減少在前述 週邊部之曝光量的設定機構以能束進行前述各區域之掃描 曝光；其特徵在於， 前述設定機構，係可將前述呈部分重疊之區域的曝光 量、與該重疊區域爲相異之區域的曝光量予以獨立設定， 且可做連續的調整。 12·—種曝光裝置，係爲了在工件上對周邊部呈部分重 疊之複數的區域分別轉寫圖案，乃透過可緩緩減少在前述 週邊部之曝光量的設定機構以能束進行前述各區域之掃描 曝光；其特徵在於， 前述複數之區域，係包含於前述工件上實質上同時形 成之第1區域與第2區域； 前述設定機構可將前述第1與第2區域呈重疊之重複 曝光區域的曝光量、與該重複曝光區域爲相異之區域的曝 光量予以獨立設定。 13·—種曝光裝置，係爲了在工件上對周邊部呈部分重 疊之複數的區域分別轉寫圖案，乃透過可緩緩減少在前述 週邊部之曝光量的設定機構以能束進行前述各區域之掃描 曝光；其特徵在於， 係具備光學積分器(用以形成由實像或虛像所構成之複 數的光源像）； 3 ----I---^ --------I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 486741 A8 B8 C8 D8 六、申請專利範圍 前述設定機構係配置於：與來自前述複數之光源像的 複數之能束的光路中至少兩個光路對應之光路中之和前述 工件呈光學共軛的位置。 14. 如申請專利範圍第13項之曝光裝置，其中，前述 設定機構係可將前述呈部分重疊之區域的曝光量、與該重 疊區域爲相異之區域的曝光量獨立設定。 15. 如申請專利範圍第13項之曝光裝置，其中，前述 設定機構可將前述呈部分重疊之區域的曝光量做連續設定 〇 16. 如申請專利範圍第11、13、14或第15項之曝光裝 置，其中，前述複數之區域，係包含於前述工件上實質上 同時形成之第1區域與第2區域； 前述設定機1構，係用以設定前述第1與第2區域呈重 疊之疊合(overlap)區域的曝光量。 17. 如申請專利範圍第11〜15項中任一項之曝光裝置， 其中，前述設定機構係爲了控制前述呈部分重疊區域之前 述轉寫之圖案的輪廓而設定前述呈部分重疊區域的前述曝 光量。 18. 如申請專利範圍第17項之曝光裝置，其中，前述 設定機構係以讓前述呈部分重疊之區域的前述輪廓、與前 述呈部分重疊之.區域爲相異之區域的輪廓成爲大致同一輪 廓的方式來設定前述曝光量。 19. 如申請專利範圍第17項之曝光裝置，其中，前述 圖案之輪廓係包含前述圖案的線寬。 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱_) ------------裝---- (請先閱讀背面之注意事項再填寫本頁) 訂i 486741 A8 B8 C8 D8 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 20. 如申請專利範圍第11〜15項中任一項之曝光裝置， 其中，前述複數之區域係包含在前述工件上實質上同時形 成之第1區域、第2區域、以及第3區域； 前述設定機構係將對於前述第1與第2區域呈重疊之 第1重複曝光區域的曝光量、對於前述第2與第3區域呈 重疊之第2重複曝光區域的曝光量彼此獨立地來設定。 21. —種曝光裝置，係藉由自光學積分器（形成複數之 光源像)所射出之曝光用光來照明光罩，將該光罩之圖案的 一部分重複曝光於基板上；其特徵在於，具備： 照度調節裝置，係配置於前述光學積分器之與前述光 罩的共軛面，用以調節前述重複曝光部分的照度；以及 移動裝置，係讓該照度調節裝置移動於前述共軛面內 〇 22. 如申請專利範圍第21項之曝光裝置，其中，前述 照度調節裝置係具有遮光部，該遮光部係依據前述重複曝 光部分之前述圖案的像輪廓來將前述曝光用光加以遮光。 經濟部智慧財產局員工消費合作社印製 23. 如申請專利範圍第22項之曝光裝置，其中，前述 遮光部係具有自前述重複曝光部分之中央往非重複曝光部 分而逐漸縮徑之輪廓形狀。 24. 如申請專利範圍第23項之曝光裝置，其中，前述 移動裝置係移動前述遮光部使該遮光部之形狀變形。 25. 如申請專利範圍第24項之曝光裝置，係具備： 儲存裝置，係將依據前述基板上之前述圖案的像輪廓 所求出之前述形狀予以事先儲存；以及 5 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公 486741 A8 B8 C8 D8 六、申請專利範圍 控制裝置，係依據儲存於該儲存裝置之前述形狀來控 制前述移動裝置。 申請專利範圍第21〜23項中任〜項之曝光裝置， 其中，前述移動裝置係調整前述照度調節裝置與前述光學 積分器的相對位置關係。 t 27·如申請專利範圍第％項之曝光裝置，係具備： 儲存裝置，係將依據前述基板上之前述圖案的像輪廓 所求出之前述相對位置關係予以事先儲存；以及 控制裝置，係依據儲存於該儲存裝置之前述相對位置 關係來控制前述移動裝置。 28·如申專利範圍第21〜25項中任一項之曝光裝置， 係具備： ~ 照度檢測裝置，係用以檢測前述重複曝光部分之照度 以及前述重複曝光部分以外之照度；以及 控制置，係依據該照度檢測裝置之檢測結果來控制 前述移動裝置。 29·如申請專利範圍第21〜25項中任一項之曝光裝置， 其中，前述曝光係在前述光罩與前述基板之同步移動中所 進行。 30·如申g靑專利範圍第21〜25項中任一項之曝光裝置， 其中，前述曝光係利用配置於前述光罩與前述基板之間的 複數之投影光學系統來進行。 31.如申請專利範圍第3〇項之曝光裝置，其中，前述 複數之投影光學系統係以讓該複數之投影光學系統的投影 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) |裝--------訂--- # 經濟部智慧財產局員工消費合作社印製 486741 A8 B8 C8 D8 六、申請專利範圍 區域之一部分重複的方式來配置。 32. —種曝光方法，係藉由自光學積分器（形成複數之 光源像)所射出之曝光用光來照明光罩，將該光罩之圖案的 一部分重複曝光於基板上；其特徵在於，包含： 於前述光學積分器之與前述光罩的共軛面配置用以調 節前述重複曝光部分的照度之照度調節裝置之步驟；以及 讓該照度調節裝置移動於前述共軛面內之步驟。 33. 如申請專利範圍第32項之曝光方法，係藉由前述 照度調節裝置之移動來調整前述照度調節裝置與前述光學 積分器之相對位置關係。 -------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）486741 Printed by A8, B8, C8, D8, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 6. Application for Patent Scope 1. An exposure method, in order to transfer the patterns on the workpiece to the surrounding areas that partially overlap with each other. The setting mechanism for gradually reducing the exposure amount in the peripheral portion performs scanning exposure of each of the regions with an energy beam; characterized in that the exposure amount of the partially overlapped region and the exposure amount of a region different from the overlapped region are Can be set independently and can be adjusted continuously. 2 · —An exposure method is to transfer the pattern on the workpiece to overlap the plural areas that are partially overlapped on the workpiece. The above-mentioned areas can be carried out by a setting mechanism that can gradually reduce the exposure amount in the peripheral area. Scanning exposure; characterized in that the plurality of regions include a first region and a second region formed substantially simultaneously on the workpiece; an exposure amount of the repeatedly exposed region overlapping the first and second regions; and The exposure amount of the repeated exposure area is different. The exposure amount is set independently. 3. An exposure method is to transfer the pattern to a plurality of areas that partially overlap the peripheral portion on the workpiece. The exposure amount setting mechanism of the peripheral portion performs scanning exposure of each of the regions with an energy beam; characterized in that the workpiece is irradiated with energy beams from a plurality of light source images composed of a real image or a virtual image; the setting mechanism is Arranged in the sum of the optical paths corresponding to at least two optical paths among the optical paths of the plurality of energy beams from the plurality of light source images It was optically conjugate positions. ------------------- Order --------- (Please read the precautions on the back before filling this page) This paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 486741 A8 B8 C8 D8 6. Application for patent scope. 4. For the exposure method of item 3 of the patent scope application, of which the foregoing is partially The exposure amount of the overlapping area and the exposure amount of the area different from the overlapping area are set independently. 5. The exposure method according to item 3 or 4 of the scope of patent application, wherein the exposure amount of the aforementioned partially overlapping areas can be set continuously. 6. For the exposure method according to item 1, 3, or 4 of the scope of patent application, wherein the plurality of regions include a first region and a second region that are formed substantially simultaneously on the workpiece; the aforementioned setting mechanism is used to set the aforementioned The exposure amounts of the repeatedly exposed areas where the first and second areas overlap. 7. The exposure method according to any one of claims 1 to 4, in which the aforementioned setting mechanism sets the aforementioned exposure in the partially overlapped region in order to control the outline of the transcribed pattern in the partially overlapped region. the amount. 8. The exposure method according to item 7 of the scope of patent application, wherein the aforementioned setting mechanism is such that the outline of the aforementioned partially overlapped region and the outline of the region which is different from the aforementioned partially overlapping region become substantially the same contour. Way to set the aforementioned exposure. 9. The exposure method according to item 7 of the patent application, wherein the outline of the aforementioned pattern includes the line width of the aforementioned pattern. 10. The exposure method according to any one of claims 1 to 4 in the scope of patent application, wherein the plurality of regions include a first region, a second region, and a third region that are formed substantially simultaneously on the workpiece; The aforementioned setting mechanism will overlap 2 for the aforementioned 1st and 2nd areas. "" §_1 n ϋ · nnnn ^ ^ n · ϋ em§ mmm§ i Ban 1 I (Please read the precautions on the back before filling in this (Page) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 486741 A8 B8 C8 D8___ Sixth, the scope of the patent application scope of the repeated exposure area, The exposure amounts for the second repeated exposure areas where the second and third areas overlap are set independently of each other. 11. An exposure device for transferring patterns to a plurality of areas that partially overlap a peripheral portion on a workpiece, and is capable of performing beam area setting by a setting mechanism that can gradually reduce the exposure amount in the peripheral portion. Scanning exposure; characterized in that the aforementioned setting mechanism can independently set the exposure amount of the aforementioned partially overlapped area and the exposure amount of an area different from the overlapped area, and can continuously adjust. 12 · —An exposure device is used to transfer the pattern on the workpiece in order to transfer a plurality of areas that partially overlap the peripheral portion, and the above-mentioned areas can be performed by a setting mechanism that can gradually reduce the exposure amount in the peripheral portion. Scanning exposure; characterized in that the plurality of regions include a first region and a second region that are formed substantially simultaneously on the workpiece; the setting mechanism may repeat the first and second regions with overlapping exposure regions And the exposure amount of the area different from the repeatedly exposed area are independently set. 13 · —An exposure device is used to transfer the patterns on the workpiece in order to transfer a plurality of areas that partially overlap the peripheral portion. The above-mentioned various areas are performed by a setting mechanism that can gradually reduce the exposure amount in the peripheral portion. Scanning exposure; characterized in that it is equipped with an optical integrator (used to form a complex light source image composed of real or virtual images); 3 ---- I --- ^ -------- I ( Please read the notes on the back before filling this page.) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm). Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economy. 486741 A8 B8 C8 D8 The aforementioned setting means is arranged at a position where the sum of the optical paths of the workpiece corresponding to at least two of the optical paths corresponding to at least two of the optical paths of the plurality of energy beams from the plurality of light source images is optically conjugated. 14. For an exposure device according to item 13 of the patent application, wherein the aforementioned setting mechanism can independently set the exposure amount of the aforementioned partially overlapped area and the exposure amount of an area different from the overlapped area. 15. For an exposure device applying for item 13 of the patent scope, wherein the aforementioned setting mechanism can continuously set the exposure amount of the aforementioned partially overlapped area. 16. For example, for the application of items 11, 13, 14 or 15 of the scope of patent application The exposure device, wherein the plurality of areas includes a first area and a second area formed substantially simultaneously on the workpiece; the setting mechanism is configured to set the first area and the second area to overlap each other. The exposure of the overlap area. 17. The exposure device according to any one of claims 11 to 15, in which the aforementioned setting mechanism sets the aforementioned exposure in the partially overlapping area in order to control the outline of the transcribed pattern in the partially overlapping area. the amount. 18. For the exposure device according to item 17 of the application for a patent, wherein the setting mechanism is such that the outline of the partially overlapping area and the outline of the partially overlapping area become substantially the same outline. Way to set the aforementioned exposure. 19. The exposure device according to claim 17 in which the outline of the aforementioned pattern includes the line width of the aforementioned pattern. 4 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love _) ------------ installation ---- (Please read the precautions on the back before filling this page ) Order i 486741 A8 B8 C8 D8 VI. Scope of patent application (please read the precautions on the back before filling this page) 20. If you apply for any of the exposure devices in the range of 11 to 15 of the patent scope, of which the foregoing multiple The region includes a first region, a second region, and a third region that are formed substantially simultaneously on the workpiece; the setting mechanism is an exposure amount for a first repeated exposure region where the first and second regions overlap, The exposure amounts for the second repeated exposure areas where the second and third areas overlap are set independently of each other. 21. An exposure device that illuminates a photomask with exposure light emitted from an optical integrator (which forms a plurality of light source images), and repeatedly exposes a part of the pattern of the photomask on a substrate; characterized in that: Equipped with: an illuminance adjusting device arranged on the conjugate surface of the optical integrator and the photomask to adjust the illuminance of the repeatedly exposed portion; and a moving device for moving the illuminance adjusting device within the conjugate surface 〇22. The exposure device according to item 21 of the patent application, wherein the illuminance adjusting device has a light-shielding portion that shields the light for exposure according to the image contour of the pattern of the repeatedly exposed portion. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. For example, the exposure device in the scope of patent application No. 22, wherein the light-shielding portion has a contour shape that gradually decreases in diameter from the center of the repeatedly exposed portion to the non-repeated exposure portion. 24. The exposure device according to item 23 of the patent application, wherein the moving device moves the light shielding portion to deform the shape of the light shielding portion. 25. If the exposure device under the scope of application for patent No. 24 is provided with: a storage device that stores the aforementioned shape obtained in accordance with the image contour of the aforementioned pattern on the aforementioned substrate in advance; and 5 the paper size applies Chinese national standards (CNS) A4 specification (210 X 297 male 486741 A8 B8 C8 D8) 6. The scope of patent application control device is to control the aforementioned mobile device based on the aforementioned shape stored in the storage device. Any of the scope of patent applications No. 21 ~ 23 ~ Item 27, wherein the aforementioned mobile device adjusts the relative positional relationship between the aforementioned illuminance adjustment device and the aforementioned optical integrator. T 27. If the exposure device according to the item% of the scope of the patent application is provided with: a storage device, which will be based on the aforementioned The aforementioned relative positional relationship obtained from the image contour of the aforementioned pattern on the substrate is stored in advance; and the control device controls the aforementioned mobile device based on the aforementioned relative positional relationship stored in the storage device. The exposure device of any one of ~ 25 items, including: ~ Illumination detection device, To detect the illuminance of the repeatedly exposed portion and the illuminance other than the repeatedly exposed portion; and the control device is to control the aforementioned mobile device according to the detection result of the illuminance detection device. 29. If any of the scope of patent applications No. 21 to 25 The exposure device according to item 1, wherein the exposure is performed during the synchronous movement of the photomask and the substrate. 30. The exposure device according to any one of the items 21 to 25 in the scope of the patent application, wherein the exposure system is This is performed by using a plurality of projection optical systems arranged between the aforementioned reticle and the aforementioned substrate. 31. The exposure device according to item 30 of the patent application scope, wherein the aforementioned plurality of projection optical systems are configured to allow the plurality of projection optical systems The projection of the system is based on the Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page) | Installation -------- Order --- # Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 486741 A8 B8 C8 D8 VI. One of the areas in the scope of patent application is configured in a repeated manner. The method is to illuminate a photomask with exposure light emitted from an optical integrator (forming a plurality of light source images), and repeatedly exposing a part of the pattern of the photomask on a substrate; characterized in that it includes: A step of configuring an illuminance adjusting device of the integrator with the conjugate surface of the aforementioned photomask to adjust the illuminance of the repeatedly exposed portion; and a step of moving the illuminance adjusting device within the conjugate surface. The exposure method of Item 32 is to adjust the relative positional relationship between the aforementioned illumination adjusting device and the aforementioned optical integrator by moving the aforementioned illumination adjusting device. ------------------- Order --------- (Please read the notes on the back before filling out this page) Employees ’Cooperatives of Intellectual Property Bureau, Ministry of Economic Affairs Printed on 7 This paper is sized for China National Standard (CNS) A4 (210 X 297 mm)
TW090107655A 2000-04-17 2001-03-30 Aligner and method of exposure TW486741B (en)

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TWI849088B (en) * 2019-03-29 2024-07-21 日商尼康股份有限公司 Exposure device, illumination optical system, and device manufacturing method

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KR100530499B1 (en) 2003-12-26 2005-11-22 삼성전자주식회사 Exposure method and reticle, reticle assembly and exposure apparatus for performing the same
JP7182406B2 (en) * 2018-09-14 2022-12-02 株式会社Ｓｃｒｅｅｎホールディングス Drawing device and drawing method

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