TW544755B - Exposure method and exposure apparatus - Google Patents

Exposure method and exposure apparatus Download PDF

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Publication number
TW544755B
TW544755B TW090111263A TW90111263A TW544755B TW 544755 B TW544755 B TW 544755B TW 090111263 A TW090111263 A TW 090111263A TW 90111263 A TW90111263 A TW 90111263A TW 544755 B TW544755 B TW 544755B
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Taiwan
Prior art keywords
exposure
light
aforementioned
scanning direction
substrate
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TW090111263A
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Chinese (zh)
Inventor
Takechika Nishi
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Nikon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Abstract

An exposure apparatus transfers an image of a pattern on a reticle onto a wafer W by synchronously scanning the reticle and the wafer with respect to a projection optical system in a state in which the reticle is illuminated with an exposure light beam from an exposure light source subjected to pulse light emission via a fly's eye lens, a movable blind, a main condenser lens system, and a fixed blind. First and second uneven illuminance-correcting plates, on which shielding line groups for correcting convex and concave uneven illuminance are depicted, are arranged at a position defocused from a conjugate plane with respect to a pattern plane of the reticle. A third correcting plate for roughly correcting uneven illuminance is arranged at a position further defocused therefrom. It is possible to enhance the uniformity of the totalized exposure amount on the wafer or the telecentricity when the exposure is performed in accordance with the scanning exposure system.

Description

544755 A7 ---- ---B7___ 五、發明說明（/ ) 【技術領域】 本發明係關於用以製造半導體元件、液晶顯示元件、 電發顯7TC兀件、微機械或薄膜磁頭等元件之微影步驟，將 光罩圖案轉印在基板上所使用之掃描曝光型之曝光方法及 曝光裝置，特別是在使用脈衝光作爲曝光用光之場合最爲 適合。 【習知技術】 例如，爲了應付半導體之集積度以及微細度之提升， 在用以製造半導體元件之微影步驟（代表性上以光阻塗布 步驟、曝光步驟和光阻顯像步驟所構成）中的曝光步驟所 使用之曝光裝置，解像力和轉印保真度被要求以更高等級 。因而，隨著投影光學系統之數値孔徑漸漸變大，以曝光 光束而言之曝光用光之波長傾向Ki*F準分子雷射（波長 248nm)，甚至是ArF準分子雷射（波長193nm)之短波長 化。如此短波長之曝光用光之光源，目前只是如準分子雷 射般之脈衝光源。又，爲了提高解像力等，有必要提高以 適當曝光量將塗布在作爲基板之晶圓上之光阻曝光之曝光 量控制精度。 又，最近投影光學系統沒有大型化，曝光領域（晶圓 上的各照射領域）變大，爲了使曝光步驟之產能提升，而 相對於投影光學系統同步掃描作爲光罩之標線片和晶圓之 步進掃描(step and·scan)方式等之掃描曝光型的投影曝光裝 置（以下，稱爲「掃描型曝光裝置」）已被開發。在此種 掃描型曝光裝置，晶圓上之累計曝光量，:雖對掃描方向藉 3 (請先閱讀背面之注意事項再填寫本頁) - 訂： 線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 _ __B7___ 五、發明說明（\ ) 由積分效果被平均化’但對與掃描方向正交之非掃描方向 ，例如狹縫狀之照明領域內之非掃描方向之照度不均之影 響就照原樣顯現出來。就其此對策而言’例如日本專利特 開平7— 142313號公報和對應之EPO,633,506A1，揭示對應 於實際之累計曝光量使規定照明領域之形狀之視野光圏的 開口的形狀機械性地變化，或將前述視野光圈機械性地切 換之方法。 如上所述’在掃描型曝光裝置爲進行曝光量控制’視 野光圈之開口形狀機械性地切換之方法在曝光用光爲水銀 燈之光線（1線等）般之連續光之場合是有效的。但是’即 使在掃描型曝光裝置’現狀係作爲曝光用光之短波長之比 較低之振盪頻率之脈衝光繼續使用著’在使用如此脈衝光 之場合，爲了將累計曝光量均一化，而有必要將在晶圓上 之曝光領域之掃描方向之寬度，以實質上在晶圓上之各點 以整數脈衝量進行曝光而決定。在此場合’若機械性地切 換視野光圏之開口之形狀時，由於會有在晶圓上產生部分 地不能滿足前述整數脈衝量之曝光條件之疑慮，因而機械 性地切換前述視野光圏之開口形狀之方法，幾乎沒有什麼 實用性。又，在晶圓上之各點將照射之脈衝光之數目作成 整數，例如揭示在美國專利第6,078,381號。 又，在曝光用光爲紫外光之場合，藉由大氣中之有機 物和曝光用光之反應等，依序在構成照明光學系統和投影 光學系統之光學構件表面上產生霧狀物，使該等光學系統 之透射率長期地低下。進而，當曝光用光係在波長200nm 4 ;---------------- (請先閱讀背面之注意事項再填寫本頁) -TJ_ - -線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ___B7_ 五、發明說明（^ ) (請先閱讀背面之注意事項再填寫本頁) 程度以下之真空紫外範圍之脈衝光時，藉由所謂之壓實 (compaction)等而使照明光學系統和投影光學系統中之折射 構件依序劣化，此種透射率依序變動現象也會產生。此樣 之透射率之變動亦存在於曝光用光之光程，因而在使用例 如所謂之變形照明法在瞳面之曝光用光之分布持續著非軸 對稱的狀態時，折射構件之透射率變動亦形成非軸對稱， 在照明領域（又爲曝光領域）之照度分布於非掃描方向變 成不均一，有累計曝光量之不平均變大之疑慮。進而，該 透射率變動在以光軸外之點爲中心之場合，亦有對於標線 片或晶圓之曝光用光之遠心性之崩離量超過容許範圍之疑 慮。 -線 如此，例如由光學構件之霧化和劣化，而產生透射率 分布之經常的變動，在照明領域（或曝光領域）之照明分 布於非掃描方向變成不均一之場合，藉由交換前述光學構 件雖能改善前述不均一性，但交換方面需要相當之時間。 又，雖考慮過設計光學構件之交換機構，但此會導致曝光 裝置大型化，且製造成本亦上升。 【發明槪要】 本發明鑑於此點，本發明之第1目的，係提供在以掃 描方式進行曝光之場合，能提高在晶圓上之累計曝光量之 均一性’或提局曝光用光之遠心性之曝光方法。 本發明第2目的進一步提供在使用作爲曝光光束之脈 衝光進fji市描曝光之場合’能提筒在晶圓上之累計曝光量 之均一性之曝光方法。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 —_____B7____ 五、發明說明（0) / 又，本發明之第3目的係提供以掃描曝光方式進行曝 光之場合’在至晶圓之曝光用光之光程上即使產生光學構 件或光學特性之變動，例如即使產生透射率變動（亦包含 反射率變動），能容易提高在晶圓上之累計曝光量之均一 1生，或曝光用光之遠心性之曝光方法。 又，本發明之另一目的係提供能使用該曝光方法之曝 光裝置、以及使用該曝光方法之高精度之元件製造方法。 依本發明之第1曝光方法，以曝光光束照明光罩（R )，同步掃描前述光罩和基板（W)，透過前述光罩之圖 案來曝光前述基板之曝光方法，在至前述基板之前述曝光 光束之光程上，控制相對於沿與前述基板之掃描方向（Y 方向）交叉之非掃描方向（X方向）以既定之分布來控制 前述曝光光束之透射率。 若藉由本發明，曝光光束之照射系統（例如照明系統 或投影系統等）中之透過構件之透射率或反射構件之反射 率變動，舉一例，在從曝光光束之能量之監視位置至前述 基板爲止之全體之透射率依序變動之場合，以互相抵銷對 其內之非掃描方向之變動量之分布來控制前述曝光光束之 透射率。因而，減少前述基板上之非掃描方向之照度不均 ，乃至於提升前述基板上之掃描曝光後之、累計曝光量之均 一性。又，在對前述曝光光束透射率以例如遠離光軸之點 爲中心而變動之場合，由於在前述光罩或基板上之曝光光 束之遠心性變化，因而控制曝光光束之透射率來抵銷該透 、 射率變動。因此即使前述光罩或基板之高度變化，投影像 6 (請先閱讀背面之注意事項再填寫本頁) 訂· · 線· ^紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公爱) 544755 A7 ___B7_ 五、發明說明（（） 之位置偏離等也不產生。 在本發明，前述曝光光束爲脈衝光之場合，較佳在前 述曝光光束之前述基板上之曝光領域（35P)之該基板之掃 描方向之寬度，係以在該基板上之曝光對象之點通過前述 曝光領域期間，對於前述曝光對象之點前述曝光光束實質 上以整數脈衝照射而決定。例如’使用作爲曝光光束之準 分子雷射光之場合，以前述脈衝光之頻率不太高之條件， 在爲了提高產能而提高基板之掃描速度進行掃描曝光之場 合，對該基板上之各點若不僅以同一之整數脈衝光來進行 曝光時，則在基板上最大有產生1脈衝光量程度之累計曝 光量不均之疑慮。關於此，在本發明將前述曝光領域之掃 描方向之寬度固定，由於控制曝光用光之透射率本身，因 而能兼顧以該整數脈衝進行曝光之條件和非掃描方向之照 度不均之控制。 又，較佳在透過一段或複數段之光學積分器（均一器 或均化器）（6, 9)提高前述曝光光束之照度分布之均一性 之後，控制前述曝光光束之透射率。藉由在通過積分器後 控制透射率，能容易且高精度地補正照射系統之經常的透 射率分布的變動等。 又，較佳係將相對於該曝光光束之透射率之沿該非掃 描方向之分布作成可變，藉由對該曝光光束之透射率之控 制，來補正該基板之相對於該曝光光束之沿該非掃描方向 之照度不均。在該基板上於該掃描方向即使產生該曝光光 束之照度不均，藉由從掃描曝光所得之積分效果，累計曝 7 (請先閱讀背面之注意事項再填寫本頁) --------訂---------· 尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) '" 544755 A7 _____B7 __ 五、發明說明（i7 ) (請先閱讀背面之注意事項再填寫本頁) 光量之不均一實質上不產生。對此’對該基板之非掃描方 向不產生積分效果，因而該非掃描方向之照度不均不產生 ，故非掃描方向之累計曝光量之均一性向上提升。 再者，預先將該曝光光束之透射率相對於該基板之掃 描方向保持既定之可變分布’藉由對該曝光光束之透射率 之控制，來補正該曝光光束之對該光罩或該基板之遠心性 之崩離量亦可。對掃描方向即使具有透射率分布，對累計 曝光量幾乎無影響，但可補正掃描方向之遠心性之崩離量 Ο 又，如上述爲了控制對曝光光束之透射率，例如，對 於該光罩之圖案面，或此與該面之共範面分別僅以既定間 隔散焦之領域，較佳係以沿該基板之非掃描方向具有可變 之透射率分布之透射率分布控制構件（23A、23B、24)來 部分遮光該曝光光束。如此，由於藉由從光罩之圖案面（ 或此其共軛面）散焦之領域來將曝光光束部分遮光’使該 透射率分布控制構件之遮光圖案之像在該光罩上分散’所 以該基板上之全部之點上幾乎均一地被曝光光束依序照射 ，累計曝光量之均一性向上提升。 又，較佳該透射率分布控制構件，例如，具備沿著該 基板之非掃描方向以既定之分布變化遮光面積之第1組複 數遮光線（28A、29A);及與此該第1組遮光線實質上同 一圖案之第2組複數遮光線（28B、29B);分別使該第1 組遮光線和該第2組遮光線對該曝光光束之光程沿著該基 板之掃描方向實質上對稱搔脫之動作，和將該第1組和第 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 _____ B7 _ 五、發明說明（) 2組複數遮光線分別沿著該基板之非掃描方向之移動動作 分開使用。該遮光線，例如爲微小點圖案之集合體亦可， 或使曝光光束可以某種程度透射過之半透明圖案亦可。 藉由將該2組之遮光線沿著該掃描方向實質上對稱插 脫，不會影響遠心性，能補正軸對稱之凸出之照度不均或 凹入之照度不均。另一方面，藉由將該2組之遮光線分別 沿著非掃描方向移動，能補正從光軸分離之凸出或凹入之 照度不均，或傾斜於非掃描方向之照度不均。 又，該第1組複數遮光線（28A、28B)較佳以沿著該 基板之掃描方向依序變化之間距排列。藉此，藉由該複數 之遮光線來防止產生曝光光束之繞射圖案（亦即，照度不 均）。以大致一定間距排列之複數之遮光線互相略傾斜亦 可獲得同樣之效果。 又，該曝光光束係脈衝光時，對於在該曝光光束之脈 衝發光之各週期之間，將該基板移動之間隔換算成該第1 組複數遮光線之位置之間隔之長度，較佳係該第1組複數 遮光線間之間距分別不同。藉此，可防止某一個遮光線之 散焦像被轉印在基板上。 又，該透射率分布控制構件更具備較該第1組和第2 組複數遮光線，沿著該基板之非掃描方向具有更大遮光面 積變化量之第3組複數遮光線（26A〜26C、27A〜27C) ’爲了大致補正該曝光光束之沿該非掃描方向之照度不均 ’較佳將該第3組複數遮光線對該曝光光束之光程沿著該 基板之掃描方向和非掃描方向之至少一方移動。 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---------線 544755 A7 __ B7 _ 五、發明說明) (請先閱讀背面之注意事項再填寫本頁) 本發明之第2曝光方法，係藉由以曝光光束照明光罩 ，並以透過光罩之曝光光束掃描基板來曝光基板者，其係 包含： 在該基板面或其附近量測曝光用光之照度不均；在至 該基板之該曝光光束之光程上，控制與該基板之掃描方向 交叉之非掃描方向之該曝光光束之照度分布，來補正該量 測所得之照度不均；以及相對於曝光光束同步移動該光罩 和基板，以該照度不均被補正後之曝光光束來掃描基板。 若根據本曝光方法，藉由控制曝光光束之照度分布能有效 補正在非掃描方向之量測照度不均。 -線 其次，本發明之第1曝光裝置，係以從曝光光源（1)所 射出之曝光光束來照明光罩，同步掃描該光罩和基板（W )，透過該光罩之圖案來曝光該基板者，其係具有：透射 率分布控制構件（23A、23B、24)，配置在相對於該光罩 之圖案面或此面之共軛面分別僅以既定間隔散焦之領域， 沿與該基板之掃描方向交叉之非掃描方向以可變之透射率 分布將該曝光光束部分遮光；及驅動裝置（20)，驅動該 透射率分布控制構件，俾控制該曝光光束之透射率之沿該 非掃描方向之分布。根據該曝光裝置可實施本發明之曝光 方法。 又，較佳係具備固定之視野光圈（17)，以該曝光光 源作爲脈衝光源，並配置於對該光罩之圖案面或此該面之 共軛面，分別僅以較該透射率分布控制構件之散焦量少之 間隔而散焦之面；對應此該視野光圈之該基板之掃描方向 10 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 544755 A7 _B7 ____ 五、發明說明（1 ) 之寬度，較佳係以在該基板上之曝光對象之點通過該視野 光圈之像期間，對該曝光對象之點該曝光光束係以實質上 爲整數脈衝照射而定。 又，該曝光光源和該透射率分布控制構件之間較佳配 置1段或複數段之光學積分器（6、9)。 又，該透過濾分布補正構件較佳具備沿著該基板之非 掃描方向依序變化遮光面積之第1組複數遮光線（28A、 29A)和與此第1組遮光線實質上同一形狀之第2組複數 遮光線（28B、29B)。又，該透射率分布控制構件較佳更 具備較該第1組及第2組複數遮光線沿著該基板之非掃插 方向之具有更大遮光面積變化量之第3組複數遮光線（ 26A 〜26C、27A 〜27C)。 本發明之第2曝光裝置，係以曝光光束照明光罩，同 步掃描該光罩和基板，透過該光罩之圖案來曝光該基板者 ，其係包含：量測器，量測沿與該基板之掃描方向交叉之 非掃描方向之該曝光光束之照度不均；遮光板，具有調整 沿非掃描方向之曝光光束之照度分布之遮光圖案；驅動裝 置，驅動該遮光板；及控制裝置，控制驅動裝置，使遮光 板在曝光光束之通路內移位，以補正該照度不均。若根據 本曝光裝置，沿非掃描方向所量測之照度不均，可藉由調 整曝光光束之照度分布之遮光板來有效補正。 進而，第2曝光裝置，可具備曝光光源，曝光光源產 生ΙΟΚΗζ以下之振盪頻率之脈衝光束。在該板，可形成有 沿非掃描方向延長且沿著非掃描方向具有不同之遮光面積 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) ---- (請先閱讀背面之注意事項再填寫本頁) # •線· 544755 A7 _____B7___ 五、發明說明（卜） 之遮光圖案。進而，曝光裝置能具備：將預先求得之照度 不均和藉由該板之驅動量之所得之照度不均補正量之關係 予以記憶之記憶體、及遠心性量測器。該板配置在形成於 該板之圖案像在散焦於光罩之圖案面之共軛兩上之位置， 該散焦量5 z較佳滿足對在板上之曝光用光之數値孔徑NA 及遮光圖案之掃描方向之最大線寬FD，5Z>FD/(2· ΝΑ)。 曝光裝置更具備計時器、及將預先求得之曝光裝置之 作動時間與照度不均之關係予以記憶之記憶體，該控制裝 置係對應於以計時器所量測之曝光時間，自動控制驅動裝 置，而可補正照度不均。曝光裝置能具備保持且移動第1 、第2和第3補正板之滑件、卡合滑件之導軌、及使滑件 移動之馬達。 其次，本發明之第3曝光方法，係以脈衝發光之曝光 光束照明光罩（R)，同步掃描該光罩和基板（W)，透過 該光罩之圖案來曝光該基板者，將在該基板上之該曝光光 束之照度分布相對於基板之掃描方向設定成梯形狀，將該 梯形狀之照度分布之傾斜部（67Ba、67Bb)之寬度（DE) 設定成在該曝光光束之脈衝發光之1週期之期間基板沿掃 描方向移動距離之實質上之整數倍。此結果，於掃描曝光 時該基板上之各點移動該照度分布之傾斜部期間，該曝光 光束僅在各點共通之整數脈衝量被曝光。因而，累計曝光 量被均一化。 此種場合，較佳將藉由該基板上之曝光光束之曝光領 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂-· •線. 544755 A7 _____B7___ 五、發明說明（|| ) .域之形狀設定成，對應於該基板上之累計曝光量分布，而 相對於沿與該基板之掃描方向交叉之非掃描方向之寬度（ D (X))依序變化。藉由變化該曝光領域之掃描方向之寬 度，使該累計曝光量之非掃描方向之分布形成一定，可提 升累計曝光量之均一性。 本發明之第3曝光裝置，係以曝光光束照明光罩，且 透過該光罩而以該曝光光束來曝光基板者，其係具備：照 度補正構件，對應於與該基板爲共轭面而散焦之領域且將 該曝光光束以可變之透射率分布部分遮光；及控制裝置， 設定該曝光光束之透射率分布以補正相對於該光罩或該基 板之該曝光光束之遠心性之崩離量和照度不均之至少一方 〇 本發明之第4曝光方法，係相對於脈衝振盪之曝光光 束而分別相對移動該光罩和基板，透過該光罩而以該曝光 光束來曝光該基板者，其係將沿該基板之掃描方向之該曝 光光束之照度分布設定爲大致梯形狀；使該曝光光束之該 掃描方向之寬度部分不同；設定該基板之掃描曝光條件， 俾在該基板上之曝光對象之點通過該梯形狀之照度分布之 傾斜部期間，以整數個曝光光束照射該曝光對象之點。 又，本發明之元件製造方法，係包含使用本發明之曝 光方法將元件圖案（R)轉印在工件（W)上之步驟。根據 本發明，由於累計曝光量之均〜性提升，因而能以高精度 量產高集積度之元件。 【圖式簡單說明】 13 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐1---544755 A7 ---- --- B7___ V. Description of the Invention (/) [Technical Field] The present invention relates to the use of components for manufacturing semiconductor elements, liquid crystal display elements, 7TC elements, micromechanics, or thin-film magnetic heads. The lithography step is a scanning exposure type exposure method and an exposure device used for transferring a photomask pattern onto a substrate, and is particularly suitable in the case where pulsed light is used as the exposure light. [Knowledge technology] For example, in order to cope with the increase in the degree of integration and fineness of semiconductors, in the lithography step (typically, a photoresist coating step, an exposure step, and a photoresist development step) for manufacturing a semiconductor device The exposure device used in the exposure step is required to have higher resolution and transfer fidelity. Therefore, as the numerical aperture of the projection optical system gradually increases, the wavelength of the exposure light in terms of the exposure beam tends to Ki * F excimer laser (wavelength 248nm), or even ArF excimer laser (wavelength 193nm) Short wavelength. The light source for such short-wavelength exposure light is currently only a pulsed light source such as excimer laser. In addition, in order to improve the resolution and the like, it is necessary to improve the exposure amount control accuracy of exposing a photoresist applied on a wafer as a substrate with an appropriate exposure amount. In addition, recently, the projection optical system has not been enlarged, and the exposure area (each irradiation area on the wafer) has become larger. In order to improve the productivity of the exposure step, the reticle and wafers used as the photomask are scanned synchronously with the projection optical system. A scanning exposure type projection exposure device (hereinafter, referred to as a “scanning type exposure device”) such as a step and scan method has been developed. In this scanning type exposure device, the cumulative exposure on the wafer: Although borrowing 3 from the scanning direction (please read the precautions on the back before filling out this page)-Order: The paper size of the thread applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 _ __B7___ V. Description of the invention (\) Averaged by the integration effect 'but for non-scanning directions orthogonal to the scanning direction, such as non-scanning in the slit-shaped lighting field The effect of uneven illuminance in the direction appears as it is. With regard to this countermeasure, for example, Japanese Patent Laid-Open No. 7-142313 and corresponding EPO, 633,506 A1, reveal the shape of an opening that mechanically obscures the field of vision of a shape in a predetermined lighting field corresponding to the actual cumulative exposure amount. Change, or mechanically switch the aforementioned field of view aperture. As described above, the method of mechanically switching the aperture shape of the field diaphragm in order to control the exposure amount of the scanning exposure device is effective when the exposure light is continuous light such as the light of a mercury lamp (1 line, etc.). However, the current status of "even in a scanning exposure device" is that pulsed light with a relatively short oscillation frequency and a short wavelength of exposure light is continuously used. "When such a pulsed light is used, it is necessary to uniformize the cumulative exposure amount. The width of the scanning direction of the exposure area on the wafer is determined by substantially exposing each point on the wafer with an integer pulse amount. In this case, if the shape of the opening of the field of view light is mechanically switched, there is a concern that the exposure condition of the aforementioned integer pulse amount may not be satisfied on the wafer, so the field of light of the field of view is mechanically switched. The method of opening shape has little practicality. In addition, the number of irradiated pulsed lights is made an integer at each point on the wafer, and is disclosed in, for example, U.S. Patent No. 6,078,381. In the case where the exposure light is ultraviolet light, a haze is generated on the surfaces of the optical members constituting the illumination optical system and the projection optical system in sequence by the reaction of organic substances in the atmosphere with the exposure light, etc. The transmittance of the optical system has been low for a long time. Furthermore, when the light used for exposure is at a wavelength of 200nm 4; ---------------- (Please read the precautions on the back before filling this page) -TJ_--Dimensions for line paper China National Standard (CNS) A4 Specification (210 X 297 mm) 544755 A7 ___B7_ V. Description of the Invention (^) (Please read the precautions on the back before filling this page) For pulsed light in the vacuum ultraviolet range below the level, borrow Refraction members in the illumination optical system and the projection optical system are sequentially deteriorated by a so-called compaction or the like, and such a phenomenon that the transmittance sequentially changes also occurs. Such a change in the transmittance also exists in the optical path of the exposure light. Therefore, when the distribution of the exposure light on the pupil surface using a so-called deformed illumination method continues to be non-axisymmetric, the transmittance of the refractive member changes. It also forms non-axisymmetric, and the illuminance distribution in the illumination area (also the exposure area) becomes uneven in the non-scanning direction, and there is a concern that the unevenness of the cumulative exposure amount becomes large. Further, when the change in the transmittance is centered on a point outside the optical axis, there is also a concern that the telecentricity of the reticle or wafer exposes light with a disintegration amount exceeding an allowable range. -The line is such that, for example, the haze and deterioration of the optical member cause frequent changes in the transmittance distribution. When the illumination distribution in the illumination field (or exposure field) becomes non-uniform in the non-scanning direction, the foregoing optical system is exchanged. Although the component can improve the aforementioned non-uniformity, it takes considerable time to exchange. In addition, although the design of the exchange mechanism of the optical member has been considered, this will lead to an increase in the size of the exposure device and increase the manufacturing cost. [Summary of the invention] In view of this point, the first object of the present invention is to improve the uniformity of the cumulative exposure amount on the wafer when the exposure is performed by scanning, or to raise the exposure light. Telecentricity exposure method. The second object of the present invention further provides an exposure method capable of improving the uniformity of the cumulative exposure amount on the wafer in the case of using pulsed light as an exposure light beam to enter fji city exposure. 5 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 544755 A7 —_____ B7____ 5. Description of the invention (0) / In addition, the third object of the present invention is to provide scanning exposure 'Even if there is a change in the optical member or optical characteristics in the optical path of the exposure light to the wafer, for example, even if there is a change in transmittance (including a change in reflectance), it is easy to increase the uniformity of the cumulative exposure on the wafer. 1 life, or exposure method using telecentricity of light. Another object of the present invention is to provide an exposure apparatus capable of using the exposure method, and a method for manufacturing a high-precision element using the exposure method. According to the first exposure method of the present invention, an exposure beam is used to illuminate the photomask (R), the photomask and the substrate (W) are scanned simultaneously, and the photomask is exposed through the pattern of the photomask. In the optical path of the exposure beam, the control controls the transmittance of the exposure beam with a predetermined distribution with respect to a non-scanning direction (X direction) that intersects with the scanning direction (Y direction) of the substrate. According to the present invention, the transmittance of the transmitting member or the reflectance of the reflecting member in the irradiation system of the exposure beam (such as an illumination system or a projection system) varies, for example, from the monitoring position of the energy of the exposure beam to the aforementioned substrate. When the transmittance of the whole is changed sequentially, the transmittance of the exposure light beam is controlled by the distribution of the amount of variation in the non-scanning direction to offset each other. Therefore, the uneven illumination in the non-scanning direction on the substrate is reduced, and the uniformity of the cumulative exposure amount after the scanning exposure on the substrate is improved. When the transmittance of the exposure beam changes around, for example, a point far from the optical axis, the telecentricity of the exposure beam on the mask or the substrate changes, so the transmittance of the exposure beam is controlled to offset the Transmission and emissivity changes. Therefore, even if the height of the aforementioned reticle or substrate changes, please cast the image 6 (Please read the precautions on the back before filling this page) Order · · Line · ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297) ) 544755 A7 ___B7_ 5. The description of the invention (() does not produce positional deviations, etc. In the present invention, when the aforementioned exposure beam is pulsed light, it is preferred that the exposure area (35P) on the aforementioned substrate of the aforementioned exposure beam should be The width of the substrate in the scanning direction is determined by the point at which the exposure object on the substrate passes through the exposure field, and the exposure beam is substantially irradiated with an integer pulse for the point of the exposure object. For example, 'use as the exposure beam standard In the case of molecular laser light, under the condition that the frequency of the aforementioned pulsed light is not too high, and in order to increase the throughput and increase the scanning speed of the substrate for scanning exposure, if the points on the substrate are not only the same integer pulse light, When the exposure is performed, there is a concern that the cumulative exposure amount unevenness of about 1 pulse light amount may be generated on the substrate at the maximum. The width of the scanning direction in the aforementioned exposure field is fixed, and since the transmittance of the exposure light is controlled, it is possible to take into account the conditions for exposure with the integer pulse and the control of uneven illumination in the non-scanning direction. Or plural optical integrators (homogeneizers or homogenizers) (6, 9) after increasing the uniformity of the illuminance distribution of the aforementioned exposure beam, the transmittance of the aforementioned exposure beam is controlled. By controlling the transmittance after passing through the integrator It is possible to easily and accurately correct the variation of the regular transmittance distribution of the irradiation system, etc. It is also preferable to make the distribution of the transmittance in the non-scanning direction relative to the exposure beam variable, and to adjust the exposure The transmittance of the light beam is controlled to correct the uneven illuminance of the substrate in the non-scanning direction with respect to the exposure light beam. Even if the illuminance of the exposure light beam is uneven in the scanning direction on the substrate, exposure from scanning is performed. The accumulated point effect is cumulatively exposed 7 (Please read the precautions on the back before filling this page) -------- Order --------- · The scale applies to China Home Standard (CNS) A4 Specification (210 X 297 mm) '" 544755 A7 _____B7 __ V. Description of the Invention (i7) (Please read the precautions on the back before filling out this page) The unevenness of light quantity does not substantially occur. In this regard, no integration effect is generated in the non-scanning direction of the substrate, so the uneven illumination in the non-scanning direction is not generated, so the uniformity of the cumulative exposure amount in the non-scanning direction is increased upward. Furthermore, the transmission of the exposure beam in advance The predetermined variable distribution of the rate with respect to the scanning direction of the substrate can be adjusted by controlling the transmittance of the exposure beam to compensate for the telecentric aberration of the exposure beam to the mask or the substrate. Even if there is a transmittance distribution in the scanning direction, it has almost no effect on the cumulative exposure, but it can correct the telecentric aberration of the scanning direction. Also, as described above, in order to control the transmittance of the exposure beam, for example, for the photomask The pattern surface, or the areas that are common to this surface, are only defocused at predetermined intervals, preferably with a transmittance with a variable transmittance distribution along the non-scanning direction of the substrate Fabric control means (23A, 23B, 24) partially shielding the exposure light beam. In this way, since the exposure light beam is partially shielded by defocusing from the pattern surface of the mask (or its conjugate surface), 'the image of the shading pattern of the transmittance distribution control member is scattered on the mask' All the points on the substrate are almost uniformly illuminated by the exposure light beam sequentially, and the uniformity of the cumulative exposure amount is increased upward. In addition, it is preferable that the transmittance distribution control member includes, for example, a first group of plural light-shielding lines (28A, 29A) for changing a light-shielding area with a predetermined distribution along a non-scanning direction of the substrate; and the first group of light-shielding lines Lines of the second group of multiple light-shielding lines (28B, 29B) with substantially the same pattern; making the light path of the first group of light-shielding lines and the second group of light-shielding lines to the exposure beam substantially symmetrical along the scanning direction of the substrate, respectively The action of disengagement, and applying the Chinese paper standard (CNS) A4 (210 X 297 mm) to the 1st and 8th paper sizes. 544755 A7 _____ B7 _ 5. Description of the invention () 2 sets of multiple shading lines, respectively The movement along the non-scanning direction of the substrate is used separately. The light-shielding line may be, for example, an aggregate of minute dot patterns, or a translucent pattern that allows the exposure light beam to be transmitted to some extent. By inserting and removing the shading lines of the two groups substantially symmetrically along the scanning direction, the telecentricity will not be affected, and the uneven illumination unevenness of the convexity or concaveness of the axial symmetry can be corrected. On the other hand, by moving the shading lines of the two groups in the non-scanning direction, unevenness in illuminance between the convex or concave portions separated from the optical axis, or unevenness in illuminance inclined in the non-scanning direction can be corrected. In addition, the first plurality of light-shielding lines (28A, 28B) are preferably arranged in order to change the pitch in order along the scanning direction of the substrate. Thereby, the diffraction pattern (ie, uneven illumination) of the exposure light beam is prevented from being generated by the plurality of shading lines. The same effect can also be obtained by a plurality of light-shielding lines arranged at approximately a certain pitch slightly inclined to each other. In addition, when the exposure light beam is pulse light, the interval of the substrate movement between the periods of the pulse light emission of the exposure light beam is converted into the length of the interval of the positions of the first plurality of light-shielding lines. The distance between the first plurality of shading lines is different. This prevents a defocused image of a certain light-shielding line from being transferred to the substrate. In addition, the transmittance distribution control member further includes a third group of multiple light-shielding lines (26A ~ 26C, 27A ~ 27C) 'In order to roughly correct the uneven illumination in the non-scanning direction of the exposure beam', it is preferable to set the optical path of the third group of multiple shading lines to the exposure beam along the scanning direction and non-scanning direction of the substrate. At least one moves. 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling this page) Order --------- line 544755 A7 __ B7 _ 5 (Explanation of the invention) (Please read the precautions on the back before filling this page) The second exposure method of the present invention is to expose the substrate by illuminating the mask with an exposure beam and scanning the substrate with the exposure beam through the mask. It includes: measuring the unevenness of the exposure light on or near the substrate surface; and controlling the exposure beam in a non-scanning direction that intersects the scanning direction of the substrate on the optical path of the exposure beam to the substrate The illuminance distribution is used to correct the measured illuminance unevenness; and the mask and the substrate are moved synchronously with respect to the exposure light beam, and the substrate is scanned with the exposure light beam after the illuminance unevenness is corrected. According to this exposure method, by controlling the illuminance distribution of the exposure light beam, it is possible to effectively compensate the uneven illuminance measured in the non-scanning direction. -Line Secondly, the first exposure device of the present invention illuminates the photomask with an exposure light beam emitted from an exposure light source (1), scans the photomask and the substrate (W) simultaneously, and exposes the pattern through the pattern of the photomask. The substrate has a transmittance distribution control member (23A, 23B, 24), which is disposed in a field that is defocused only at a predetermined interval with respect to the pattern surface of the photomask or the conjugate surface of the surface, respectively. The non-scanning direction intersecting the scanning direction of the substrate partially shields the exposure beam with a variable transmittance distribution; and a driving device (20) drives the transmittance distribution control member to control the transmittance of the exposure beam along the non-scanning direction. The distribution of directions. According to the exposure apparatus, the exposure method of the present invention can be carried out. In addition, it is preferable to have a fixed field of view aperture (17), use the exposure light source as a pulse light source, and arrange it on the pattern surface of the photomask or the conjugate surface of the surface, respectively, and control only by the transmittance distribution. The defocused surface of the component with a small amount of defocus; the scanning direction of the substrate corresponding to the aperture of the field of view 10 This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 mm) 544755 A7 _B7 ____ V. Description of the invention (1) The width of the exposure object is preferably determined by a substantially integer pulse irradiation period during which the point of the exposure object on the substrate passes through the aperture of the field of view. . Further, it is preferable that an optical integrator (6, 9) of one stage or plural stages is arranged between the exposure light source and the transmittance distribution controlling member. In addition, it is preferable that the transparent filtering distribution correction member includes a first group of plural light-shielding lines (28A, 29A) which sequentially change the light-shielding area along the non-scanning direction of the substrate, and a first group of light-shielding lines having substantially the same shape as the first group of light-shielding lines. 2 sets of multiple shading lines (28B, 29B). In addition, the transmittance distribution control member preferably further includes a third light shielding line (26A) having a larger light shielding area change amount than the first light shielding line and the second light shielding line along the non-scanning direction of the substrate. (~ 26C, 27A ~ 27C). The second exposure device of the present invention illuminates the photomask with an exposure beam, scans the photomask and the substrate synchronously, and exposes the substrate through the pattern of the photomask, which includes: a measuring device, a measuring edge and the substrate The illuminance of the exposure beam in the non-scanning direction intersecting with the scanning direction is uneven; the light-shielding plate has a light-shielding pattern that adjusts the illuminance distribution of the exposure light beam in the non-scanning direction; a driving device that drives the light-shielding plate; The device shifts the shading plate in the path of the exposure beam to correct the uneven illumination. If the illuminance unevenness measured along the non-scanning direction according to this exposure device can be effectively corrected by adjusting the shading plate of the illuminance distribution of the exposure beam. Furthermore, the second exposure device may be provided with an exposure light source which generates a pulsed light beam with an oscillation frequency of 10 KΗζ or less. The board can be formed with a non-scanning area extending along the non-scanning direction and having different shading areas along the non-scanning direction. 11 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) ---- (please first Read the notes on the reverse side and fill out this page) # • 544755 A7 _____B7___ 5. The shading pattern of the description of the invention (b). Furthermore, the exposure device can include a memory that memorizes the relationship between the illuminance unevenness obtained in advance and the illuminance unevenness correction amount obtained by the driving amount of the plate, and a telecentricity measuring device. The plate is arranged at a position where the pattern image formed on the plate is defocused on the conjugate two of the pattern surface of the photomask, and the defocus amount 5 z preferably satisfies the number of apertures NA for the exposure light on the plate. And the maximum line width FD, 5Z > FD / (2 · ΝΑ) in the scanning direction of the shading pattern. The exposure device further includes a timer and a memory that memorizes the relationship between the operating time of the exposure device obtained in advance and the uneven illumination. The control device automatically controls the driving device corresponding to the exposure time measured by the timer. , But can correct uneven illumination. The exposure device can include a slider that holds and moves the first, second, and third correction plates, a guide rail that engages the slider, and a motor that moves the slider. Secondly, the third exposure method of the present invention is to illuminate the mask (R) with a pulsed exposure light beam, scan the mask and the substrate (W) simultaneously, and expose the substrate through the pattern of the mask. The illuminance distribution of the exposure beam on the substrate is set to a ladder shape with respect to the scanning direction of the substrate, and the width (DE) of the inclined portion (67Ba, 67Bb) of the illuminance distribution of the ladder shape is set to be at the pulse emission of the exposure beam. During the period of one cycle, the substrate is moved substantially a multiple of the distance along the scanning direction. As a result, during the scanning exposure, when each point on the substrate moves the inclined portion of the illuminance distribution, the exposure beam is exposed only at an integer pulse amount common to each point. Therefore, the cumulative exposure amount is uniformized. In this case, it is better to use the exposure collar of the exposure beam on the substrate. 12 The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm). (Please read the precautions on the back before filling in this page. ) Order-· • Line. 544755 A7 _____B7___ 5. Description of the invention (||). The shape of the domain is set to correspond to the cumulative exposure distribution on the substrate, and to the non-scanning that intersects with the scanning direction of the substrate. The direction width (D (X)) changes sequentially. By changing the width of the scanning direction of the exposure area, the distribution of the cumulative exposure amount in a non-scanning direction is made constant, and the uniformity of the cumulative exposure amount can be improved. The third exposure device of the present invention is a device for illuminating a mask with an exposure beam and exposing a substrate with the exposure beam through the mask. The exposure device includes: an illuminance correction member that is scattered in correspondence with a conjugate surface with the substrate. Focus the area and block the exposure beam with a variable transmittance distribution; and a control device that sets the transmittance distribution of the exposure beam to correct the telecentricity of the exposure beam relative to the mask or the substrate At least one of uneven amount and illuminance. The fourth exposure method of the present invention involves moving the photomask and the substrate relatively with respect to the pulsed exposure light beam, and exposing the substrate with the exposure light beam through the photomask, It is to set the illuminance distribution of the exposure beam along the scanning direction of the substrate to a substantially trapezoidal shape; make the width portions of the exposure beam in the scanning direction different; set the scanning exposure conditions of the substrate, and the exposure on the substrate While the point of the object passes through the inclined portion of the ladder-shaped illuminance distribution, the point of the exposed object is irradiated with an integer number of exposure beams. The device manufacturing method of the present invention includes a step of transferring the element pattern (R) to the workpiece (W) using the exposure method of the present invention. According to the present invention, since the uniformity of the cumulative exposure amount is improved, it is possible to mass-produce a high-integration component with high accuracy. [Schematic description] 13 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm 1 ---

VI ·--------------- (請先閱讀背面之注意事項再填寫本頁) —線· 544755 A7 __B7_ 五、發明說明（ 第1圖係表示本發明之實施形態之一例之投影曝光裝 置之部分剖面之前視圖。VI · --------------- (Please read the notes on the back before filling out this page) —line · 544755 A7 __B7_ V. Description of the invention (Figure 1 shows the implementation of the invention A partial cross-sectional front view of a projection exposure apparatus as an example of a form.

第2A至2C圖係表示第1圖中之照度不均補正板23A 、23B以及固定遮簾17之俯視圖。 第3A圖係表示第1圖中之照度不均補正板23A、23B 以及固定遮簾17之散焦之狀態圖，第3B圖係表示累計曝 光量分布之一例之圖。 第4A圖係表示第2圖之照度不均補正板23B之俯視 圖，第4B圖係第4A圖中之遮光線27沿寬度方向放大圖 ，第4C圖係第4A圖中之遮光線26沿寬度方向之放大圖 〇 第5圖係表示第1圖中之粗照度不均補正板24之圖。 第6A至6E圖係表示第1圖中之驅動機構20之一部 份之構成例之圖。 第7A圖係表示相對於固定遮簾17之開口 17a以遮光 線群不被投影而定位第2圖之照度不均補正板23A和23B 後之狀態圖，第7B圖係表示對應於第7A圖之晶圓上之照 度不均之例之圖。 第8A圖係表示相對於固定遮簾之開口 17a而沿掃描 方向驅動第2圖之照度不均補正板23A和23B之狀態圖， 第8B圖係表示對應於第8A圖之照度不均之例之圖。 / 第9A圖係表示相對於固定遮簾之開口 17a而沿掃描 方向以及非掃描方向驅動第2圖之照度不均補正板23A和 23B後之狀態圖，第彡B圖係表示對應於第9A圖之照度不 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 1Ί· •線 544755 A7 _____B7___ 五、發明說明（^) 均之例之圖。 第10圖係表示相對於固定遮簾17而定位第1變形例 之照度不均補正板23C和23D後之狀態圖。 第11A至11D圖係表示第2變形例之遮光線以及其動 作之圖。 第12A圖係表示第2圖之實施形態之遮光線26之放 大圖，第12B圖係表示由第3之變形例之多數點圖案所構 成之遮光圖案66之放大圖。 第13A圖係表示本發明之其它實施形態之固定遮簾之 開口 17b之圖，第13B圖係表示與其對應之晶圓上之曝光 領域之照度分布圖。 第14A圖係表示在第2圖之實施形態之脈衝發光之時 序之一例之圖，第14B圖係表示在第13圖之實施形態之 脈衝發光之時序之一例之圖。 第15A至15C圖係在本發明之實施形態，曝光領域之 非掃描方向之照度分布之量測方法之一例之說明圖。 【發明之較佳實施形態】 以下，就本發明之一實施形態參照圖式加以說明。本 實施形態係以由步進掃描方式所形成之掃描曝光型之投影 曝光裝置（掃描型曝光裝置）進彳了曝光之場合，適用本發 明。 第1圖係表示本實施形態之投影曝光裝置之槪略構造 ，在此第1圖，以曝光光源而言，係使用作爲脈衝光源之 ArF之準分子雷射光源（波長157 nm)。·但，以曝光光源 15 本紙^度適用中關家標準（CNS)A4規格（210 X 297公- (請先閱讀背面之注意事項再填寫本頁) - 544755 A7 _____Β7_____ 五、發明說明（丨+) 而言，使用光纖放大器來放大KrF準分子雷射（波長248 nm)、F2雷射（波長157 nm)、Kr2雷射（波長146 nm) 、YAG雷射之高次諧波產生裝置、和來自半導體雷射之光 後，用非線性光學結晶等，能使用至波長20〇nm程度以下 之真空紫外線範圍止之波長轉換之光源裝置等。此些光源 雖然都是脈衝光源，但對於例如準分子雷射光源之數kHz 程度之比較低之振盪頻率之光源，將來自半導體雷射之光 加以波長轉換之光源裝置之振盪頻率，能夠高到例如 100kHz程度之視爲連續光之程度。 由曝光光源1來之波長193nm之紫外脈衝光所形成之 曝光用光IL (曝光光束），通過用以和曝光裝置本體間配 合光程位置之光束配合單元（BMU) 2，入射在作爲光衰 減器之可變減光器3。用來控制對晶圓上之光阻之曝光量 之曝光控制單元21，係控制曝光光源1之發光之開始和停 止以及輸出（振盪頻率、脈衝能量），並且，階段地或連 續地調整在可變減光器3之減光率。 通過減光器3之曝光用光IL，經由沿著既定之光軸而 配置之第1透鏡系統4A和第2透鏡系統4B所構成之光束 成形系統，而入射到作爲第1段之光學積分器（均一器或 均化窃1 )之弟1複眼透鏡6。從此第1複眼透鏡6所射出 之曝光用光IL透過第1透鏡系統7A、光程折射用之反射 鏡8和第2透鏡系統7B，而入射到作爲第2段光學積分器 之第2複眼透鏡9。 在對第2複眼透鏡9，亦即曝光對象之標線片r之圖 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) " ------ (請先閱讀背面之注意事項再填寫本頁) 訂· 線- 544755 A7 ___B7_____ 五、發明說明（I〔） 案面之光學傅立葉轉換面（照明系統之瞳面）’開口光圈 板10藉由驅動馬達l〇e旋轉自如地配置著。在開口光圏板 10,通常照明用之圓形之開口光圏l〇a、作爲變形照明之 一例之輪帶照明用之開口光圏i〇b、由作爲變形照明之其 它例之4個之偏心小開口構成之4極照明用之開口光圏（ 未圖示）以及小相干係數（σ値）用之小圓形之開口光圏 (未圖示）切換自在地配置著。由開口光圏板1〇和驅動馬 達l〇e，構成將照明條件轉換爲複數之照明條件（通常照 明、變形照明和小σ値照明）之任何一個切換照明條件之 「照明條件切換系統」，統轄控制裝置全體之動作之主控 制系統22透過驅動馬達l〇e設定照明條件。 在進行變形照明（輪帶照明和4極照明等）時，爲了 得到提高曝光用光IL之利用效率之高照度（脈衝能量）， 在入射到第2複眼透鏡9之階段，較佳係將曝光用光IL之 截面形狀整形爲大致輪帶狀之領域。因而，可以由例如多 數之相位型之繞射格子的集合體所構成之繞射光學元件（ DOE)置換第1複眼透鏡。又，照明條件切換系統不限於 上述構造，組合在開口光圈板10，或單獨地使用圓錐稜鏡 和/或變焦光學系統以及繞射光學元件亦可。以第2段之 光學積分器而言使用內面反射型積分器（r〇d integrator) 之場合，例如，使用DOE、圓錐稜鏡或多面體稜鏡等，相 對於照明系統之光軸IAX而傾斜曝光用光IL後入封在內 面反射型積分器之同時，對應於照明條件而變更在前述入 射面之曝光用光IL之入射角度範圍。 π 本紙張尺度適用中關家標準（CNS)A4規格（210 X 297公爱)" -- (請先閱讀背面之注意事項再填寫本頁) 訂- -線 544755 A7 ______B7 五、發明說明（^ ) (請先閱讀背面之注意事項再填寫本頁) 在第1圖，在第2複眼透鏡9設置著通常照明用之開 口光圏l〇a，從第2複眼透鏡9射出且通過開口光圏之曝 光用光IL係入射到透射率高反射率低之分束器11。以作 爲曝光光束之能量監視點之分束器11反射之曝光用光，透 過聚光用之透鏡18後，入射到由光檢測器所構成之積分感 測器19，積分感測器19之檢測信號S1被提供到曝光控制 單元21。因爲曝光用光IL係脈衝光，所以檢測信號S1在 曝光控制單元內透過峰値保持電路和類比/數位（A/D) 轉換器轉換成數位資料。積分感測器20的檢測信號和在作 爲被曝光基板之晶圓W上之曝光用光IL的照度的關係， 例如定期或因應必要而以高精度量測後，記憶在曝光控制 單元21內之記憶體。曝光控制單元21藉由積分感測器20 內之檢測信號能間接監視對晶圓W之曝光用光之照度（平 均値）和其積分値而構成。 線· 透射過分束器11之曝光用光IL沿著光軸IAX經過第 1透鏡系統12A和第2透鏡系統12B，接著按次序通過作 爲本發明之透射率分布控制構件之粗照度不均補正板24、 第1照度不均補正板23A和第2照度不均補正板23B後， 入射到可動遮簾（可動照明視野光圏）13。如後述，在粗 照度不均補正板24之射出面描繪既定之複數遮光線，在照 度不均補正板23A和23B對向之內面分別描畫複數之遮光 線，在垂直於粗照度不均補正板24和照度不均補正板23A 、23B之光軸IAX之面內之位置係藉由驅動機構20來分 別予以控制。驅動機構20之動作係以主控制系統22透過 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ___B7 _ 五、發明說明"7) (請先閱讀背面之注意事項再填寫本頁) 驅動系統25來控制。此場合，後者之可動遮簾13設置在 對應於標線片面之共軛面，照度不均補正板23A和23B之 遮光線之形成面從該共軛面沿光軸方向僅以既定間隔（詳 細後述）散焦。 此時，爲使照度不均補正板23A和23B之各遮光線之 散焦量互相大致對稱地形成同程度，而使照度不均補正板 23A和23B之遮光線之形成面對向之同時，該間隔設定爲 窄至如1 mm程度。藉此，在該等之遮光線之形成面有微 塵等之異物不易附著之優點。又，粗照度不均補正板24之 遮光線之形成面相對於該共軛面比照度不均補正板23A和 23B更散焦。 線 曝光時，通過可動遮簾13之曝光光線IL透過光程折 射用之反射鏡14、成像用之透鏡系統15A、副聚光透鏡系 統15B、主聚光透鏡系統16以及固定遮簾17，照明作爲 光罩之標線片R之圖案面（標線片面）之照明領域（照明 視野領域）35。固定遮簾17係配置在從標線片面略散焦之 面。亦即，固定遮簾17之散焦量比照度不均補正板23A 和23B之散焦量設定更少。例如特開平4一 196513號公報 以及所對應的美國專利第5,473,410所揭示，在後述之投 影光學系統PL之圓形視野內之中央，與掃描曝光方向正 交之方向延伸成直線狹縫狀或矩形狀（以下，統稱「狹縫 狀」）般配置之開口 17a (參照第.2B圖）。 此場合，爲了防止往晶圓W上之各照射領域之掃描曝 光之開始時以及終了時不必要之曝光，可動遮簾13係將照 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ____B7 _2A to 2C are plan views showing the illuminance unevenness correction plates 23A and 23B and the fixed shade 17 in the first image. Fig. 3A is a diagram showing the defocusing state of the illuminance unevenness correction plates 23A and 23B and the fixed curtain 17 in Fig. 1. Fig. 3B is a diagram showing an example of the cumulative exposure distribution. FIG. 4A is a top view of the illuminance unevenness correction plate 23B of FIG. 2, FIG. 4B is an enlarged view of the light-shielding line 27 in FIG. 4A along the width direction, and FIG. 4C is a light-shielding line 26 along the width in FIG. 4A. The enlarged view of the direction. FIG. 5 is a view showing the rough illuminance unevenness correction plate 24 in the first image. 6A to 6E are diagrams showing a configuration example of a part of the drive mechanism 20 in the first figure. FIG. 7A shows the state of the illuminance unevenness correction plates 23A and 23B relative to the opening 17a of the fixed shade 17 with the shading line group not projected. FIG. 7B shows the state corresponding to FIG. 7A Example of uneven illumination on a wafer. FIG. 8A is a diagram showing a state in which the illumination unevenness correction plates 23A and 23B of FIG. 2 are driven in the scanning direction with respect to the opening 17a of the fixed blind, and FIG. 8B is an example of the illumination unevenness corresponding to FIG. 8A Figure. / FIG. 9A shows the state after driving the illumination unevenness correction plates 23A and 23B of FIG. 2 in the scanning direction and the non-scanning direction with respect to the opening 17a of the fixed blind, and FIG. 9B shows the state corresponding to 9A The illuminance of the picture is not 14 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) ) The example of equal. Fig. 10 is a diagram showing a state after the illumination unevenness correction plates 23C and 23D of the first modification are positioned with respect to the fixed shade 17. 11A to 11D are diagrams showing shading lines and operations of the second modification. Fig. 12A is an enlarged view of the light-shielding line 26 in the embodiment shown in Fig. 2, and Fig. 12B is an enlarged view of the light-shielding pattern 66 composed of a plurality of dot patterns in the third modification. Fig. 13A is a diagram showing an opening 17b of a fixed curtain according to another embodiment of the present invention, and Fig. 13B is an illuminance distribution diagram of an exposure area on a corresponding wafer. Fig. 14A is a diagram showing an example of the timing of pulse light emission in the embodiment of Fig. 2 and Fig. 14B is a diagram showing an example of the timing of pulse light emission in the embodiment of Fig. 13. Figures 15A to 15C are explanatory diagrams of an example of a method for measuring an illuminance distribution in a non-scanning direction in an exposure field in an embodiment of the present invention. [Preferred Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. This embodiment is applicable to a case where exposure is performed by a scanning exposure type projection exposure device (scanning exposure device) formed by a step-and-scan method, and the present invention is applicable. Fig. 1 shows a schematic structure of the projection exposure apparatus of this embodiment. Here, in Fig. 1, an exposure light source uses an ArF excimer laser light source (wavelength 157 nm) as a pulse light source. · However, the exposure light source 15 paper ^ degree is applicable to the Zhongguanjia Standard (CNS) A4 specification (210 X 297 male-(Please read the precautions on the back before filling out this page)-544755 A7 _____ Β7 _____ 5. Description of the invention (丨 + ), Using fiber amplifiers to amplify KrF excimer laser (wavelength 248 nm), F2 laser (wavelength 157 nm), Kr2 laser (wavelength 146 nm), YAG laser's higher harmonic generation device, and After light from a semiconductor laser, non-linear optical crystals can be used to convert light sources such as wavelengths up to a wavelength of less than 200 nm in the vacuum ultraviolet range. Although these light sources are pulsed light sources, The molecular laser light source has a relatively low oscillating frequency of several kHz, and the oscillating frequency of a light source device that converts light from a semiconductor laser to wavelength can be as high as 100 kHz as continuous light. The exposure light IL (exposure beam) formed by the ultraviolet pulse light with a wavelength of 193 nm from the light source 1 is incident through a beam matching unit (BMU) 2 for matching the optical path position with the exposure device body. In the variable dimmer 3 as an optical attenuator. An exposure control unit 21 for controlling the exposure amount to the photoresist on the wafer controls the start and stop of the light emission of the exposure light source 1 and the output (oscillation frequency, pulse Energy) and adjust the light reduction rate in the variable light reducer 3 stepwise or continuously. The exposure light IL passing through the light reducer 3 passes through the first lens system 4A and the first lens system 4A arranged along a predetermined optical axis. The beam shaping system constituted by the second lens system 4B is incident on the first-stage optical integrator (homogenizer or homogenizer 1) 1 fly-eye lens 6. From this, the first fly-eye lens 6 is used for exposure The light IL passes through the first lens system 7A, the reflection mirror 8 for optical path refraction, and the second lens system 7B, and is incident on the second fly-eye lens 9 as the second-stage optical integrator. That is, the reticle r of the exposure object is shown in Figure 16. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) " ------ (Please read the precautions on the back before filling this page ) Order · Line-544755 A7 ___B7_____ V. Description of Invention (I [) The optical Fourier conversion surface (the pupil surface of the lighting system) 'opening diaphragm plate 10 is rotatably arranged by a drive motor 10e. In the opening diaphragm plate 10, a circular opening diaphragm 10a for general lighting is used, Opening light 圏 i0b for wheel lighting as an example of deformation lighting, opening light 圏 (not shown) for 4-pole lighting consisting of four eccentric small openings as other examples of deformation lighting, and small coherence The small circular opening light beam (not shown) used for the coefficient (σ 値) is switched freely. The opening light beam plate 10 and the drive motor 10e constitute a lighting condition that converts the lighting condition into a plurality of lighting conditions ( Any of the "lighting condition switching systems" that switch the lighting conditions, such as normal lighting, deformed lighting, and small σ 値 lighting, and the main control system 22, which controls the overall operation of the control device, sets the lighting conditions through the drive motor 10e. In the case of anamorphic lighting (belt lighting, quadrupole lighting, etc.), in order to obtain a high illuminance (pulse energy) that improves the utilization efficiency of the exposure light IL, it is preferable that the exposure is performed at the stage of entering the second fly-eye lens 9 The cross-sectional shape of the light IL is shaped into a substantially belt-shaped area. Therefore, the first fly-eye lens can be replaced by a diffractive optical element (DOE) composed of, for example, an aggregate of a plurality of phase-type diffraction lattices. In addition, the lighting condition switching system is not limited to the above-mentioned structure, and may be combined in the aperture diaphragm plate 10, or a cone-shaped and / or zoom optical system and a diffractive optical element may be used alone. For the optical integrator of the second paragraph, when an internal reflection integrator is used, for example, DOE, cone 稜鏡, or polyhedron 稜鏡 is used, and it is inclined with respect to the optical axis IAX of the lighting system. After the exposure light IL is enclosed in the internal reflection type integrator, the incident angle range of the exposure light IL on the aforementioned incident surface is changed according to the lighting conditions. π This paper size applies the Zhongguanjia Standard (CNS) A4 specification (210 X 297 public love) "-(Please read the precautions on the back before filling this page) Order--line 544755 A7 ______B7 V. Description of the invention ( ^) (Please read the precautions on the back before filling in this page) In Figure 1, the second fly-eye lens 9 is set with an opening light 圏 10a for general lighting, which is emitted from the second fly-eye lens 9 and passes through the opening light. The radon exposure light IL is incident on the beam splitter 11 having a high transmittance and a low reflectance. The exposure light reflected by the beam splitter 11 which is the energy monitoring point of the exposure beam passes through the lens 18 for condensing and enters the integral sensor 19 composed of a photodetector, and the detection of the integral sensor 19 The signal S1 is supplied to the exposure control unit 21. Because the exposure light IL is pulsed light, the detection signal S1 is converted into digital data by a peak-to-peak hold circuit and an analog / digital (A / D) converter in the exposure control unit. The relationship between the detection signal of the integration sensor 20 and the illuminance of the exposure light IL on the wafer W as the substrate to be exposed is, for example, measured periodically and with high accuracy as required, and then stored in the exposure control unit 21 Memory. The exposure control unit 21 is configured by a detection signal in the integration sensor 20 to indirectly monitor the illuminance (average 値) of the exposure light to the wafer W and the integration 値. Line · The exposure light IL transmitted through the beam splitter 11 passes through the first lens system 12A and the second lens system 12B along the optical axis IAX, and then passes through the coarseness unevenness correction plate that is the transmittance distribution control member of the present invention in order. 24. After the first illuminance unevenness correction plate 23A and the second illuminance unevenness correction plate 23B are incident on the movable shade (movable illumination field of vision) 13. As will be described later, the predetermined plural shading lines are drawn on the emission surface of the rough unevenness correction plate 24, and the plural shading lines are drawn on the inner faces of the uneven illumination correction plates 23A and 23B, respectively. The positions in the plane of the optical axis IAX of the plate 24 and the illuminance unevenness correction plates 23A and 23B are controlled by the drive mechanism 20, respectively. The action of the drive mechanism 20 is through the main control system 22 through 18 paper sizes. The Chinese national standard (CNS) A4 specification (210 X 297 mm) is applied. 544755 A7 ___B7 _ V. Description of the invention " 7) (Please read the back Note: Please fill in this page again) Drive system 25 to control. In this case, the movable shutter 13 of the latter is provided on a conjugate surface corresponding to the one-sided plane of the reticle, and the formation planes of the shading lines of the unevenness correction plates 23A and 23B are only set at predetermined intervals along the optical axis direction from the conjugate surface. (Described later) defocused. At this time, in order to make the defocus amounts of the shading lines of the unevenness correction plates 23A and 23B approximately symmetrical with each other to form the same degree, and to make the formation of the shading lines of the unevenness correction plates 23A and 23B face each other, The interval is set to be as narrow as 1 mm. As a result, there is an advantage that foreign matter such as dust cannot be easily attached to the formation surface of the light-shielding lines. The shading line forming surface of the rough unevenness correction plate 24 is more defocused with respect to the conjugate surface than the uneven illumination correction plates 23A and 23B. During linear exposure, the exposure light IL through the movable curtain 13 passes through the optical path refraction mirror 14, the imaging lens system 15A, the sub-condensing lens system 15B, the main condenser lens system 16 and the fixed curtain 17, and the illumination is illuminated. Illumination area (illumination field of vision) 35 as a pattern surface (reticle surface) of the reticle R of the photomask. The fixed curtain 17 is arranged on a surface which is slightly defocused from the one-sided surface of the reticle. That is, the defocus amount of the fixed shade 17 is set smaller than the defocus amount of the illuminance unevenness correction plates 23A and 23B. For example, Japanese Patent Application Laid-Open No. 4-196513 and the corresponding U.S. Patent No. 5,473,410 disclose that a center in a circular field of view of a projection optical system PL described later extends into a straight slit or rectangle in a direction orthogonal to the scanning exposure direction. The openings 17a (refer to FIG. 2B) arranged in a general shape (hereinafter, collectively referred to as "slit shape"). In this case, in order to prevent unnecessary exposure at the beginning and end of the scanning exposure to the various irradiation areas on the wafer W, the movable curtain 13 will be based on the Chinese paper standard (CNS) A4 (210) according to this paper size (210 X 297 mm) 544755 A7 ____B7 _

五、發明說明（/ A (請先閱讀背面之注意事項再填寫本頁) 明視野領域之掃描方向之寬度作成可變之目的而被使用。 可動遮簾13進而相對於與掃描方向正交之方向（非掃描方 向），對應於標線片R之圖案領域之尺寸，將該寬度作成 可變之目的被使用。可動遮簾13之數値孔徑之資訊亦提供 給曝光控制單元21，從積分感測器19之檢測信號求得之 照度乘上該數値孔徑之値成爲晶圓W上之實際照度。 在第1圖，由曝光光源1、光束配合單元2、可變檢光 器3、光束成形系統5、複眼透鏡6和9、透鏡系統7A和 7B、透鏡系統12A和12B、可動遮簾13、成像透鏡系統 15A、副聚光透鏡系統15B、主聚光透鏡系統16、固定遮 簾17、照度不均補正板23A和23B、以及照度不均補正板 24等構成照明光學系統ILS (照明系統）。亦即，固定遮 簾17即使配置在如可動遮簾13和照度不均補正板23A和 23bB間之面或可動遮簾13之射出側附近（以本例而言可 動遮簾13和反射鏡14之間）之面亦可。 此以外之構成例而言，因爲本例之標線片面係在標線 片R之下面，所以將固定遮簾17配置在標線片R5之下面 附近之面亦可，或配置在晶圓W之表面附近亦可。亦即， 雖可將固定遮簾17配置在晶圓W之表面（標線片之圖案 面）之共軛面，但爲了在晶圓W上相對於該掃描方向SD (在本例爲Y方向）之曝光用光IL之照度分布F (Y)構 成梯形狀，例如在固定遮簾17有形成減光器之必要。將照 度不均補正板23A、23B以及粗照度不均補正板24之至少 一方可配置在可動遮簾13和成像透鏡系統15A之間、標 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ___Β7___ 五、發明說明（【| ) 線片R和主聚光透鏡系統16之間、或標線片R和投影光 學系統PL之間。 以曝光用光IL之光源’標線片R之照明領域之電路 圖案之像透過兩側遠心投影光學系統PL以既定之投影倍 率万（谷例如爲1/4、1/5等），轉印在作爲配置在投影 光學系統PL之成像面上之基板（被曝光基板）之晶圓上 之光阻層之狹縫狀之曝光領域35P上。標線片R和晶圓W 可分別視爲第1物體和第2物體。晶圓（wafer) W係如半 導體（矽等）或SOI (在絕緣體上之矽）等之圓板狀之基 板。雖然作爲本實施形態之投影系統之投影光學系統PL 係折射系統，但反射折射系統和反射系統亦可使用。 在此場合，本實施形態之曝光用光IL (ArF準分子雷 射光）因係真空紫外光之故，被通常之空氣中之氧、二氧 化碳和水蒸氣大量吸收。爲了避免此種情形，在從本實施 形態之曝光光源1至晶圓W爲止之曝光用光IL之光程， 供給對真空紫外光而言爲高透射率之高純度之淸淨氣體（ 氦、氖等之稀有氣體，或氮等之所謂惰性氣體）。進而， 對真空紫外光高透射率之折射構件之玻璃材雖限於合成石 英、螢石（CaF2)、以及氟化鎂（MgF2)，但螢石和氟化 鎂係高價材料。因而，本實施形態之投影光學系統PL之 複數之折射構件大部分由合成石英構成，殘留之色差補正 用之構件由食石構成。又，照明光學系統ILS中之折射構 件亦由合成石英構成。以下所述，將平行於投影光學系統 PL之光軸AX之方向取爲Z軸，在Μ直於Z軸之平面內沿 21 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) -0 - 線 544755 A7 ^___B7_ ____ 五、發明說明（ΧΜ ---I----------- (請先閱讀背面之注意事項再填寫本頁) 著曝光時之標線片R和晶圓W之掃描方向SD (此處係平 行於第1圖之紙面之方向）之方向取爲Υ軸’沿著正交於 掃描方向之方向，亦即沿著本實施形態之非掃描方向（此 處垂直於第1圖之紙面之方向）取爲X軸。亦即’在標線 片R上，照明光學系統ILS之光軸ΙΑΧ與投影光學系統 PL之光軸ΑΧ—致。 此種場合，標線片R吸附保持在標線片台31上’標 線片台31可在標線片基座32上於Υ方向等速移動之同時 ，可在X方向、Υ方向和旋轉方向微動般被載置著。標線 片台31 (標線片R)之2維位置以及旋轉角藉由驅動控制 單元34內之雷射干涉計即時量測。根據此量測結果以及來 自主控制系統22之控制資訊，驅動控制單元34內之驅動 馬達（線性馬達和音頻線圈馬達等）進行標線片台31以及 位置之控制。 -線 另一方面，晶圓W透過晶圓保持器38吸附保持在晶 圓台39，晶圓台39在晶圓基座40上沿著與投影光學系統 PL之像面平行之ΧΥ平面2維移動。亦即，晶圓台39於 掃描曝光時在晶圓基座40上於Υ方向以一定速度移動之 同時，在照射曝光間係步進移動於X方向和Υ方向。再者 ’在晶圓台39控制晶圓W之Ζ方向之位置（焦點位置） 以及X軸和Υ軸之旋轉之傾斜角之Ζ整平機構亦被組裝入 ’用以在晶圓W之表面（晶圓菌）之複數量測點量測焦點 位置之多點之自動焦點偵測器（未圖示)·亦被設置著。在 曝光時，根據該自動對焦偵測器之量測値以自動對焦方式 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ------ 544755 A7 ____B7___ 五、發明說明（vl ) 驅動Z整平機構，而使晶圓面對焦於投影光學系統PL之 像面。 (請先閱讀背面之注意事項再填寫本頁) 晶圓台39之X方向和Y方向之位置以及X軸、γ軸 和Z軸之旋轉之旋轉角藉由驅動控制單元內之雷射干涉計 即時量測。根據此種量測結果以及主控制系統來之控制資 訊，驅動控制單元41內之驅動馬達（線性馬達等）進行晶 圓台39之掃描速度和位置之控制。 -線· 主控制系統22將標線片台31和晶圓台39之各移動 位置、移動速度、移動加速度和位置偏移等之各種資訊送 到驅動控制單元34和41。因而，在掃描曝光時，透過標 線片台31對曝光用光IL之照明領域35，標線片R係於+ Y方向（或一 Y方向）以速度Vr同步被掃描，透過晶圓台 39對標線片R之圖案像之曝光領域35P晶圓W於一 Y方 向（或+ Y方向）以速度/3 · Vr ( /3係從標線片R置晶圓 W之投影倍率）被掃描。爲了防止此時之掃描曝光之開始 時以及終了時對不必要部分之曝光，藉由驅動裝置單元34 來控制可動遮簾13之開閉動作。 再者，主控制系統22將晶圓W上之各照射領域之光 阻以適當之曝光量掃描曝光爲目的之各種曝光條件由曝光 資料檔讀出，聯合曝光控制單元21實行最適合之曝光步驟 。此即’向晶圓W上之1個照射領域之掃描曝光開始時之 指令若從主控制系統22發給曝光控制單元21 _，曝光控 制單元21使曝光光源丨開始發光之同時，透過積分感測器 19算出對晶圓W之曝光用光IL之照度（每單位時間之脈 23 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱） 544755 A7 _____B7____ 五、發明說明（&gt;1) (請先閱讀背面之注意事項再填寫本頁) 衝能量之和）之積分値。該積分値在掃描曝光開始時被重 置爲0。因而，在曝光控制單元21，逐步算出該照度之積 分値，相應此種結果，以掃描曝光後之晶圓W上之光阻之 各點處可得適當曝光量爲原則，控制曝光光源1之輸出（ 發鎭頻率以及脈衝能量）和可變減光器3之減光率。因而 ，在對該照射領域之掃描曝光之終了時，停止曝光光源1 之發光。 •線 又，在本例就曝光用光IL而言，爲了使用比較低振盪 頻率（不足10kHz，例如大約數kHz程度）之脈衝光，對 晶圓W上之各點設定以整數脈衝進行曝光之條件。此意味 著照射在晶圓W上各點之脈衝數形成整數。再者脈衝能量 在每次發光有某種程度之分散，所以爲了將累計曝光量之 控制精度維持在既定程度以上，在本例態對晶圓W上之各 點之曝光脈衝數N設定爲既定之最小曝光脈衝數Nmin以 上之整數之條件。在第1圖，曝光用光IL脈衝發光時，由 於固定遮簾17散焦，因此晶圓W上之曝光領域35P之掃 描方向SD (Y方向）之照度分布F (Y)如第15c所示構 成大略之梯形狀。 在第15C圖，在該照度分布F (Y)上邊之値（最大 値）定爲F0時，在本例將在照度形成F0/2之位置之照 度分布F (Y)之掃描方向之寬度D視爲曝光領域35P之 掃描方向之寬度（狹縫寬度_)。在晶圓上之狹縫寬度D， 就舉例而言係8mm程度，曝光領域35P之非掃描方向之寬 度係狹縫寬度D之2.5倍（20 mm)至4倍（32 mm〇之程 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） &quot; ' 544755 A7 _______B7___ 五、發明說明（vf) 之最大値作爲裝置構造上之極限値是可以的，但在掃描速 度較佳係滿足標線片R和晶圓W之移動控制（包含位置控 制和速度精度等）等要求精度之實用上之上限値，而在振 盪頻率係滿足脈衝光之中心波長和波長寬度之安定性和強 度分散等要求精度之實用上之上限値。 接著，以本例之照明光學系統ILS和投影光學系統PL 中之複數之折射構件而言，雖然主要是使用合成石英，但 在合成石英上持續以強脈衝光照射的話，由於材料劣化其 透射率會依序變動係已知之事。又，在其它之折射構件和 反射構件，亦由於其劣化，整體而言之透射率依序變動亦 是可能的。進而，雖然在本例於曝光用光IL之光程中供給 高度除去有機物等之雜質之淸淨氣體，即使如此由少量殘 存之雜質在折射構件和反射構件之表面上，藉由化學反應 產生之霧狀物質附著，亦有透射率（在反射構件則爲反射 率）依序降低之情事產生。在這些場合，其透射率之變動 在X方向和Y方向一樣產生時，晶圓W上之照度不均， 乃至於累計曝光量不均一不會產生。在本例將以照明光學 系統ILS中之分束器11 (能量之監視點）分離之曝光用光 IL以積分感測器19受光，將此檢測之結果乘上既定之係 數，間接求得在晶圓W上之曝光領域35P之全面照度。因 而，在光學系統之透射率整體一樣地依序變動之場合，例 如藉由定期地進行其係數之測定，對晶圓W之累計曝光量 之平均値，係可與藉由光阻所限定之目標感度在許可範圍 內一致。 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -^---------------- (請先閱讀背面之注意事項再填寫本頁) 訇- -線. 544755 A7 ________B7___ 五、發明說明（A) 但是，在進行如變形照明之場合，於照明光學系統 ILS與投影光學系統PL中，由於曝光用光IL所通過之光 程和以光軸爲中心大致一樣之光程變得不一樣，所以由那 些光學系統之劣化以及模糊所引起之透射率之變動，例如 對X方向（非掃描方向）有變得不一樣之疑慮。在此種場 合，在照明領域35和曝光領域35P，會產生非掃描方向照 度（每單元面積、每單元時間之脈衝能量）之分散，亦即 照度不均，在W上之各照射領域之掃描曝光掃描曝光後之 累計曝光量亦產生分散（曝光量不均一）。這些一超過容 許範圍，解析度之劣化或轉印保真度之低下等會產生，最 終會導致製造之半導體元件之良率降低。具體而言，於不 進行照度不均之補正動作之場合，長期而言，該照度不均 對平均照度會有超過±5〜土 10 % (以寬度而言10〜20 % )程度之可能。又，該透射率變動即使產生在Y方向（ 掃描方向），藉由以掃描曝光之積分效果，曝光量不均幾 乎不會產生。 但是，例如該透射率變動在從標線片面之共軛面散焦 位置（靠近瞳面之位置），與光軸不同之點爲中心而產生 時，與曝光量不均一起，遠心性之崩離（以下，稱遠心偏 離）產生，此種崩離量一超過容許範圍，例如標線片面稍 微往下方彎曲的領域和在晶圓W之表面略有凹凸之領域會 有投影圖像之橫向偏移產生之疑慮。該橫向偏移在解析度 劣化或重疊曝光時構成重疊誤差。因而，在本例之投影曝 光裝置，設置有補正那種由透射率變動而產生之照度不均 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ' ' ' (請先閱讀背面之注意事項再填寫本頁) . 線· 544755 A7 ^__B7 五、發明說明（yL) 和遠心偏離爲目的之機構（以下，稱爲照度不均補正機構 )。此照度不均補正機構具備有照度不均量測機構、遠心 性量測機構、透射率分布控制機構、加上作爲這些之控制 系統之主控制系統22，以及曝光控制單元21。 首先就照度不均量測機構而言，在第1圖之晶圓台39 上之晶圓保持器38之附近固定有照度量測部42,在此照 度量測部42之上面於掃描方向（Y方向）固定有具有細長 狹縫狀之受光部之CCD型線感測器42a (參照第15A圖） ，線感測器42a之檢測信號S2被提供給曝光控制單元21 。又，在照度量測器42之上面，設置由有著針孔狀之受光 部之光電感測器而構成之通常之照度不均感測器（未圖示 )。又，雖未圖示，在晶圓台39上，設置具有缓蓋曝光領 域35P之全體之受光部之照射量監視器，根據此照射量監 視器之檢測信號和積分感測器19之檢測信號S1，從積分 感測器19之檢測信號算出爲間接求出晶圓W上之照度爲 目的之係數。 在此，參照第15圖，使用線感測器42a量測沿狹縫狀 之曝光領域35P之非掃描方向（X方向）之照度不均之方 法說明。亦即，此照度不均之量測例如定期地被實行。此 時，驅動第1圖之開口光圏板10，將照明方式切換爲通常 照明、變形照明以及小¢7値照明等，各照明方式每一個實 行該照明不均一之量測。其次，伴隨著本例之投影曝光裝 、置之作動時間之經過之照度不均之狀態，係在每次照明方 式以表之形式記憶在主控制系統22內之記憶部。 28 (請先閱讀背面之注意事項再填寫本頁) # 訂-· -線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 __B7_____ 五、發明說明（) 第15A圖，係表示驅動第1圖之晶圓台39，將照度量 測部42上之線感測器42a移動至投影光學系統PL之曝光 領域35P之非掃描方向之側面後之狀態，該曝光領域35P 之掃描方向SD (Y方向）之照度分布F (Y)大致呈梯形 狀。如第15C圖所示，若將該照度分布F (Y)之底邊之 掃描方向之寬度設爲DL時，線感測器42a之受光部之掃 描方向之寬度較DL設定得更廣。 之後，驅動晶圓台39，如第15A圖所示，以於掃描方 向完全覆蓋曝光領域35P之形式，使線感測器42a於非掃 描方向（X方向）以既定間隔移動於順序一連串之量測點 。其次，在各量測點使第1圖之曝光光源1發出脈衝光， 將積分感測器19之檢測信號S1和線感測器42a之檢測信 號S2 —齊收入曝光控制單元21，藉由將根據全部之像素 而積分線感測器42a之檢測信號S2之數位資料之資料，除 以檢測信號S1之數位資料，如第15B所示，算出曝光領 域35P之非掃描方向（X)之照度分布E (X)。以積分感 測器19之檢測信號S1除算，乃是爲了除去脈衝能量之分 散之影響。如此，藉由於X方向掃描線感測器42a，能容 易且短時間內量測曝光領域35P之非掃描方向之照度分布 E (X)。又，此處之照度分布E (X)，例如係以將非掃 描方向之端部之第1量測點之照度作爲基準之相對値來表 7\\ 0 此結果，照度分布E (X)在非掃描方向之各位置X， 表示著於掃描方向（Y方向）積分曝光領域35P上之照度 29 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) 一 (請先閱讀背面之注意事項再填寫本頁) . 線- 544755 A7 _ B7 _ 五、發明說明 後之照度。在掃描曝光時，晶圓W上之各點因爲於掃描方 向橫切第15C圖之梯形狀之照度分布F (Y)之領域之故 ，所以本例之非掃描方向之照度分布E (X)與在晶圓上之 各照射領域之非掃描方向之累計曝光量之分布大致等値。 在本例將該照度分布E (X)作爲非掃描方向之位置X之 函數表示如下。又，位置X之原點係通過投影光學系統PL 之光軸AX平行於Y軸之直線。 E(X)=a · (X—b)2+c · X+d (4) 在第（4)式，各係數分別表示如下：2次係數a係相 關於位置X凸（a&gt;0)或凹（a&lt;0)之照度不均，偏移係 數b係由照度不均之對稱軸之光軸AX之往X方向之偏移 量，1次係數c亦即所謂之傾斜不均，係數d係不依循X 軸之一定之照度（偏置量）。這些係數a〜d之値，例如由 實際測得之資料根據最小自乘法可求得，求得之値以非掃 描方向之照度不均（亦即，非掃描方向之累計曝光量分布 )之狀態被記憶。具體上，在第15B圖之照度分布E (X )係數a變爲正値（凸之照度不均），係數b、c之値爲〇 ，係數d亦變爲正値。又，在本例雖以位置X之2次函數 近似表示照度分布E (X)，但以位置X之3次以上之函 數近似表示E (X)亦可，進而以指數函數等近似表示亦可 〇 回到第1圖，進一/步，在晶圓台39之晶圓保持器38 之附近設置有由玻璃基板構成之掃描板43，在掃描板43 上之遮光膜中構成大致正方形之開口圖案43a、。其次，在 30 本纸張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) # . · —線· 544755 A7 B7 ~ 5： ----- 五、發明說明（r ) 晶圓台39中之掃描板43之底面設有聚光透鏡和光電檢測 器45，由掃描板43、聚光透鏡44和光電檢測器45構成作 爲量測機構之空間圖像量測系統46，光電檢測器45之檢 測信號S3被供給在曝光控制單元21內之演算部。在量測 對曝光用光IL晶圓W之遠心性之場合，以標線片R而言 載置由既定之複數之評價用記號所構成之測試標線片。而 且，使曝光用光IL發光，以空間圖像量測系統46量測那 些評價用標記之圖像之X方向和Y方向之位置。之後，在 晶圓台39僅以既定間隔變更焦點位置（投影光學系統PL 之光軸AX方向之位置）之後，再量測那些評價用標記之 圖像之X方向和Y方向之位置。此結果，能量測從在2個 焦點位置之評價用標記之圖像之位置之橫向偏離量往X方 向和Y方向之遠心偏離量。又，可取代使用測試標線片， 而以空間圖像量測系統46檢測形成在標線片台31之基準 標記（未圖示）之圖像來計算遠心偏離量等亦可。 其次，針對本例之照度不均補正機構之一部份之透射 率分布控制機構詳細說明。在第1圖，由照度不均補正板 23A和23B、粗照度不均補正板24、驅動機構20以及驅 動系統25構成透射率分布控制機構。 第2A和2C圖係分別表示照度不均補正板23A和23B 之遮光圖案之俯視圖，第2B圖係表示第1圖中之固定遮 簾17之俯視圖，在此第2圖，表示固定遮簾π投影在可 動遮簾13之設置面.，亦即標線片面之共輒面之狀態。在第 2圖，將對應標線片面上之非掃描方向（X方向）和掃描 31 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -# -線 544755 A7 ___B7_ 五、發明說明（^σ) (請先閱讀背面之注意事項再填寫本頁) 方向（γ方向）之方向分別定爲X方向和Υ方向。在以下 之說明，將從可動遮簾13之設置面（標線片面之共軛面） 至標線片面之投影倍率設爲Ma。例如，投影倍率Ma爲3 /2倍（放大），從標線片面至晶圓面之投影倍率/3爲1/ 4倍，晶圓W上之曝光領域35P之狹縫寬度D爲8mm，則 第2B圖之固定遮簾17之狹縫狀之開口 17a之Y方向之寬 度DY1如下求得。 DY1=8 · (1/^ ) · (1/Ma) =8 · 4 · (2/3) = 21.3(mm) (5) -線· 又，如第2A圖所示，在第1照度不均補正板23A之 圖案面，形成遮光線群28A和29A，以沿Y方向挾住寬度 DY2 ( &gt; DY1 )之透過部23Aa。第1之遮光線群28A，係 較之於兩端部其中央部之線寬，就對應於非掃描方向之位 置X將2次函數地變粗之複數之遮光線26以於Y方向大 致間距P2配置排列。亦即，在第2圖爲了簡單起見（此之 後之圖亦同），遮光線群28A由4根遮光線26構成，但 實際上遮光線群28A由例如50根程度之遮光線26構成。 又，更正確地說，爲防止藉由曝光用光IL之繞射圖案之產 生，複數之遮光線26從間距P2依序地以每P2/10〜P2/ 100程度變化之間距於Y方向配置排列。在第1圖之標線 片R之照明領域35中藉由投影1根之遮光線26之圖像， 爲了對曝光用光IL之中央部之透射率變小，使對應於第 (4)式能補正e · X2 (e&gt;0)之凸之照度不均，藉由投影η (1、2、3 · · · ·)根之遮光線26之圖像，會g補正η 32 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ______B7___ 五、發明說明1 ) (請先閱讀背面之注意事項再填寫本頁) • e · X2之凸之照度不均。係數e之値依存於遮光線26之 形狀，該値被記憶在既定主控制系統22中之記憶部。因而 ，遮光線26能稱爲「凸的照度不均補正用之2次之遮光線 j ° -線 另一方面，第2A圖之第2遮光線群29A，較之於中 央部兩端部之線寬，就位置X而言將2次函數地變粗之複 數（在第2圖雖爲4根，但實際上爲50根程度）之遮光線 27從間距P2依序地每P2/10〜P2/100程度變化之間距 於Y方向配置排列。此結果，藉由在第1圖中之照明領域 35中投影一根之遮光線27之圖像，因爲對曝光用光IL之 中央部之透射率變高而能補正-e · X2之凹之照度不均， 藉由投影η根之遮光線27之圖像而能補正一n · e · X2之 凹之照度不均。因而，遮光線27能稱爲「凹的照度不均補 正用之2次之遮光線」。又，遮光線26和27，例如在透 過曝光用光之基板上能構成被覆（蒸鍍等）鉻等之遮光膜 。又，取代該遮光膜，使用以既定透射率使曝光用光透射 過之半透明膜亦可。 進而，在本例爲了照射脈衝光，在脈衝光之1週期TlL 之期間，晶圓W移動距離定爲dw時，將距離dw換算爲上 述之標線片面之共軛面之距離之距離dw· (1//5) · (1 /Ma)，係設定和該間距P2例如1〇%以上之不同。進而 ’該距離dw · ( 1/ $ ) · ( Ι/Ma)和該間距P2互相間 從整數倍之關係設定爲10%程度以上不同。藉此，在晶圓 W上遮光線群28A和29A中之例如1根之遮光線26和〜27 33 ϋ尺度適用中關家標準（CNS)A4規格（21G X 297公爱） &quot; ---- 544755 A7 _B7___ 五、發明說明 之散焦圖像被轉印之情事可被防止。 又，如第2C圖所不’在第2照度不均補正板23B之 圖案面，形成凹之照度不均補正用之遮光線群29B和凸之 照度不均補正用之遮光線群28B，俾沿Y方向挾住寬度 DY2之透過部23Ba。遮光線群28B和29B分別與第1照 度不均補正板23A之遮光線群28A和29A同形狀，照度不 均補正板23A和23B之遮光圖案相互間相對於平行X軸之 軸反轉（軸對稱）之形狀。如上述僅以第1照度不均補正 板23A雖能補正凸或凹之照度不均，但藉由使用2枚相互 反轉之照度不均補正板23A和23B，能抑制對掃描方向之 遠心偏離之產生之同時，能補正傾斜不均（第（4)式之係 數c)(後面詳述）。 如上述，藉由在照明領域35內投影遮光線26和27 之圖像，能透過地控制對曝光用光IL之透射率。但是，遮 光線26和27之圖像太鮮明時，即使考慮藉由掃描曝光之 積分效果，在晶圓上有不滿足所謂以第（1)式之曝光脈衝 數N曝光之條件之部分產生之疑慮。爲了防止此種情形， 第1圖之照度不均補正板23A和23B之遮光圖案相互地構 成在相對面之同時，該遮光圖案之形成面相對於標線片面 之共軛面設置在較固定遮簾17更大散焦位置。進而，遮光 線26和27儘可能做成微細的圖案。例如，遮光線26和 27係能補正對各平均値±0.05% (以寬度而言0.1% )程 度之凸及凹之非掃描方向之照度不均之形狀。又，遮光線 群28A、28B和29A、29B由於分別以50根程度之遮光線 34 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------- (請先閱讀背面之注意事項再填寫本頁) 訂- -線 544755 A7 —-------B7_ 五、發明說明) 26以及27構成，所以就全體而言以寬度0.1%之分解能力 能補正以寬度而言0〜10%爲止之凸和凹之非掃描方向之 照度不均。 又，將對該照度不均補正板23A、23B之遮光線之形 成面之該標線片面之共軛面之散焦量定爲5Z1，將在照度 不均補正板23A、23B上之曝光用光之數値孔徑定爲NAil ，將在遮光線26、27之最粗部分之掃描方向之線寬定爲 FD1時，散焦量5 Z1較佳以滿足下式而設定。 (5 Zl&gt;FDl/(2 · NAil) ( 6) 亦即，在將遮光線26、27代之以使用如後述之微小 多數之點圖案之場合，該線寬FD1代之以在該等點圖案之 內使用最大點圖案之掃描方向之寬度亦可。藉由滿足第（6) 式之條件，在標線片R之照明領域35中，來自遮光線26 、27之兩端之影像亦即光被完全遮光之點變無’在靜止狀 態之照度不均亦變小。因而，掃描曝光時之累計曝光量之 不均一更被減低。如此，本例之照度不均補正板23A、 23B能增大散焦量5Z1，所以將照度不均補正板23A、 23B配置在可動遮簾13之射出側之散焦位置亦可。 具體而言，在第2A圖，凸之遮光線26之兩端部之 寬度爲0，中央部之寬度爲20#m程度，同樣地，凹之遮 光線27之中央部之寬度爲〇，兩端部之寬度爲20/zm程度 。進而，間距P2之偏移量爲5/zm程度。又，對標線片面 之共軛面之照度不均補正板23A、23B5之散焦量5Z1例 如爲30mm程度，固定遮簾17之散焦量設定爲其之丨/10 35 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) I. 線 544755 A7 ___Β7__ ，φ 五、發明說明（ 程度。 第3Α圖，係表示照度不均補正板23Α (23Β亦同樣 )和固定遮簾17之散焦之狀態之槪略圖，在此第3Α圖， 對標線片面之共軛面RC固定遮簾17 (正確而言此共軛像 )略沿光軸方向（Z方向）散焦，照度不均補正板23A則 大爲散焦。此結果，通過固定遮簾17上之側邊部17a (正 確而言側邊部之共軛像）之曝光用光IL3在共軛面RC (和 晶圓面）略變寬，所以第1圖之曝光領域35P之照度分布 於掃描方向SD形成梯形狀。在第3A圖’將通過固定遮簾 17之曝光用光IL3之共軛面RC上之照度分布以槪略地近 似梯形之17b表示。在第3A圖，通過照度不均補正板 23A上之遮光線26之側邊部之曝光用光IL2，由於在共軛 面RC上於大致固定遮簾Π之開口之掃描方向SD之寬度 之1/2倍〜1倍程度之直徑之圓形領域變寬，所以在共軛 面RC乃至於晶圓W上之曝光領域35P遮光線26在大散 焦之狀態下被投影。 在此狀態進行掃描曝光時，在晶圓上之各點如第3B 圖所示，可獲得於掃描方向SD積分在第3A圖之共軛面 RC上之照明領域之照度之累計曝光量E。在無遮光線26 之狀態，對位置X大致平坦之累計曝光量爲可得時’藉由 配置遮光線26，累計曝光量E係以曲線52表示而相對於 位置X形成大致凹之分布。此意味著，藉由使遮光線26 散焦而投影，能控制在晶圓上之累計曝光量之非掃描方向 之分布。此理由將在稍後敘述。又，來自比第3A圖之照 36 (請先閱讀背面之注意事項再填寫本頁) 訂· · -線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 _____B7____ 五、發明說明（0) 度不均補正板23A更大散焦之點之曝光用光IL1，係表示 來自第1圖之粗照度不均補正板24之曝光用光。 其次，對於照度不均補正機構中之粗照度不均補正板 24之遮光圖案之構造參照第5圖說明。 第5圖表示將粗照度不均補正板24投影在第1圖之標 芽泉片面之狀態，在此第5圖，在粗照度不均補正板24對掃 描方向SD ( Y方向）以間距DY4，形成中央部之寬度依序 變細之凸之遮光線26A、26B、26C，和兩端部之寬度依序 變寬之凹之遮光線27C、27B、27A。間距DY4設定成比 照明領域35之掃描方向之寬度DR更寬，第1圖之驅動機 構20，藉由將粗照度不均補正板24沿Y方向驅動，而可 選擇在照明領域35內遮光線26A〜26C，27A〜27C之任 一圖像也不投影之狀態，和投影遮光線26A〜26C，27A〜 27C內之任意一個之散焦圖像之狀態而構成。 此場合，最細之遮光線26C和27C係由分別具有第2 圖之遮光線26、27之100根程度之照度不均之補正效果之 2次曲線構成之遮光圖案，遮光線26B、27B和26A、27A 係又分別具有遮光線26C、27C之2倍程度和3倍程度之 照度不均之補正效果之2次曲線構成之遮光圖案。因而， 以驅動機構20藉由選擇遮光線26A、26B和26C，能補正 對分別非掃描方向以寬度而言30%程度之凸之照度不均、 20%程度之凸之照度不均和10%之凸之照度不均，以驅動 機構20藉由選擇遮光線27A、27B和27C，能補正對分別 非掃描方向以寬度而言30%程度之凹之照度不均、20%程 37 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) - ，線 544755 A7 ______B7____ 五、發明說明（ (請先閱讀背面之注意事項再填寫本頁) 度之凹之照度不均和10%程度之凹之照度不均。又，因爲 遮先線26A〜27C之最大之線寬比弟2圖之遮光線26和 27變得很寬，所以爲了以第（1)式之整數脈衝數進行曝 光之條件在晶圓上之全面上被滿足，而使粗照度部將補正 板24之散焦量比之於照度不均補正板23A和23B設定在 1.5倍〜2倍程度。 -線· 又，如此大之照度不均之補正藉由將第2圖之照度不 均補正板23A和23B之遮光線26和27之根數分別增多至 200根〜300根程度亦能實現。但是，在此場合，在晶圓上 之曝光領域35P遮光線26和27之散焦圖像之數目變得過 多，以第（1)式之整數脈衝數進行曝光之條件有部分不被 滿足之疑慮。換言之，藉由使用本例之粗照度不均補正板 24，不但能滿足以整數脈衝數進行曝光之條件，且以大致 10%寬度單位能大致地補正非掃描方向之凸或凹之照度不 均。 又，藉由投影曝光裝置之使用條件等，非掃描方向之 照度不均以寬度而言小於10%程度之場合，粗照度不均補 正板能省掉。其次，針對第1圖之驅動機構20中之照度不 均補正板23A和23B之驅動機構之構成例參照第6圖說明 〇 第6A圖係表示照度不均補正板23A和23B之驅動機 構之俯視圖，第6B圖係其前視圖，第6C圖係其側視圖， 在第6A〜6C ,圖，將對應於第1圖之非掃描方向（X方向 )和掃描方向（f方向）之方向定爲X方向和Y方向之同 38 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ____ B7_ 五、發明說明 (請先閱讀背面之注意事項再填寫本頁) 時，以照明領域35C表示第1圖之標線片R之照明領域35 和共軛領域。在第6A〜6C圖，在未圖示之支持構件於平 行於X方向固定1對之導引構件54A和54B ’構成有沿著 軌導構件54A和54B滑動自在地於X方向在中央部使曝光 用光通過之開口之框狀之X軸滑件53被配置著，X軸滑 件藉由例如進給螺栓方式之驅動馬達55沿X方向驅動。 線- 又，在X軸滑件53上，透過平行於Y軸之1對導引 構件58A配置框狀之第1Y軸滑件56A，在此Y軸滑件 56A之中央部之開口如第6D圖所示’第1照度不均補正 板23A被保持，Y軸滑件56A藉由固定在X軸滑件53之 進給螺栓方式之驅動馬達57A沿Y方向驅動。爲了覆蓋第 1Y軸滑件56A，在X軸滑件上，透過平行於Y軸之1對 導引構件58B配置框狀之第2Y軸滑件56B，在此Y軸滑 件56B之中央部之開口如第6E圖所示，第2照度不均補 正板23B被保持，Y軸滑件56B藉由固定在X軸滑件53 之進給螺栓方式之驅動馬達57B沿Y方向驅動。 此時雖未圖示，X軸滑件53和Y軸滑件56A、56B分 別配置分解能程度之光學式、靜電電容式或電磁式 等之X軸和Y軸之線性編碼器，X軸之驅動馬達55和Y 軸之驅動馬達57A、57B回饋對應之X軸和Y軸之線性馬 達之量測値分別被驅動。藉此，對照明領域35C相互獨立 於掃描方/向（Y方向）能決定照度不均補正板23A和23B 之位置，並且可相對於照明領域35C —體地沿非掃描方向 定位照度不均補正板23A和23‘B。如此在本例，關於非掃 39 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ______B7 _ 五、發明說明 (請先閱讀背面之注意事項再填寫本頁) 描方向照度不均補正板23A和23B雖然一體被驅動，但爲 了補正如照度不均之內之傾斜不均，較佳係即使沿非掃描 方向，亦可將照度不均補正板23A、23B相互獨立驅動般 構成。 其次，用本例之照度不均補正機構，參照第4以及第 7〜9圖，說明補正照度不均之動作之一例。在以下所述， 將照度不均補正板23A、23B以及固定遮簾17，以投影在 第1圖之標線片面之共軛面（可動遮簾13之配置面）之狀 態表示。此時，因爲照度不均補正板23A、23B以及固定 遮簾Π分別從其共軛面以既定量散焦，所以在該等之投影 像既定之模糊產生。因而，爲表示該等之投影像之散焦之 狀態，如第7圖所表示，從照度不均補正板23A、23B之 遮光線以及固定遮簾17之開口之端邊部上之1點被射出投 影在該共軛面上之散焦圖像以重疊表示。 -線- 第4A圖，係表示第2照度不均補正板23B之俯視圖 ，第4B圖係將第4A圖中之凹之遮光線27沿Y方向之放 大圖，第4C圖係將第4A圖中之凸之遮光線26沿Y方向 之放大圖，在第4A圖，藉由通過沿著遮光線群28B兩端 之2個遮光線2 6之中心線之一列之多數假想點以及沿著遮 光線群29B兩端之2個遮光線27之中心線之一列之多數 假想點之曝光用光，而形成在與標線片面之共軛面之散焦 圖像51，係分別以圓形之領域表示。此意味著遮光線26 和27之圖像大致完全不僅以原型之形式而散焦狀態下投影 在晶圓上。 40 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 __B7 c 五、發明說明（$/) 首先，第7A圖表示，爲了使1對之照度不均補正板 23A和23B之分別之光線群28A、28B、29A、29B之散焦 圖像51B (在此沿著遮光線群之中心線之假想點之圖像） ，不進入固定遮簾Π之開口 17a之X方向之緣部之散焦 圖像51S之中，完全不進行照度不均補正板23A、23B移 動於掃描方向SD之外側之狀態，即不進行第1圖之照明 領域35中由照度不均補正板23A、23B之照度不均之補正 。此時，藉由粗照度不均補正板24之照度不均之補正亦不 進行。 在此狀態，以使用第1圖之照度量測部42參照第15A 圖說明，量測對於在投影光學系統PL之圖像面之曝光領 域之非掃描方向（X方向）之照度分布E(X)，亦即對在 晶圓W上之弗掃描方向之累計曝光量分布。 第7B圖表示該照度分布E (X)之量測結果之種種例 子，在此第7B圖，橫軸係表示在曝光領域35P內之X方 向之位置，縱軸係表示在各位置X於掃描方向積分之照度 之値E (X)。此在以下之第8B、9B圖亦同樣。因而，在 第7B圖，在照度分布E (X)之量測結果如表示在實線之 直線62般之平坦之場合，使用照度不均補正板23A、23B 以及照度不均補正板之照度不均之補正沒有進行之必要。 對此，非掃描方向之照度分布E (X)之量測結果表示以點 線之曲線63A表示之凸之照度不均、以點線之曲線63B表 示之凹之照度不均、以點線之傾斜直線63C表示之傾斜不 均或其它之照度不均，且在該照度不均超過對平均値±0.1 41 (請先閱讀背面之注意事項再填寫本頁) 入· ' .線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ^_____B7____ 五、發明說明（么3 % (以寬度而言0.2% )程度之場合，在第1圖之主控制系 統22之控制之下進行照度不均之補正。 又，該照度不均在例如寬度爲10%程度以上之場合， 最初如第5圖所示於掃描方向SD決定粗照度不均補正板 24之位置，藉由將遮光26A〜27A中之適當遮光線之投影 像投影在照明領域內，來使非掃描方向之照度不均以寬度 而言收縮在10%程度內。如此，藉由照度不均補正板23A 、23B補正殘存之照度不均。 具體上，如第8B圖之實線之曲線61A所示，在照度 分布E (X)凸之照度不均殘存之場合，如第8A圖所示， 將照度不均補正板23A、23B相對於照明光學系統之光軸 IAX沿Y方向對稱地驅動，照明領域（開口 i7a之投影像 )內，對稱地投影照度不均補正板23A之凸之照度不均補 正用之遮光線群28A之一部份，以及照度不均補正板23B 之凸之照度不均補正用之遮光線群28B之散焦像。此時之 照度不均補正板23A、23B之驅動量，照度之補正量如在 第8B圖之實線之曲線61B所示，設定成互相抵銷凸之照 度不均。此結果，往補正後之非掃描方向之照度分布E (X )如點線之直線61C所示形成平坦。此場合，實際量測既 定照度不均補正板23A、23B之驅動量和照度不均之補正 量之關係，將該關係記憶在主控制系統22內之記億部，根 據該記憶著的關係主控制系統22設定照度不均補正板23人 、23B之驅動量。又，藉由照度不均之補正，由第8B圖可 了解因爲平均照度降低，從第1圖之積分感測器19之量測 42 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ~ (請先閱讀背面之注意事項再填寫本頁) 訂- .線 544755 A7 ___B7 ___ 五、發明說明（屮/) 値計算晶圓W上之照度爲目的之係數之補正亦被進行。此 結果，在掃描曝光後之晶圓W上之各照射領域之累計曝光 量大致均一，且大致與目標値一致。 此場合，因爲在本例在照明領域內於Y方向對稱地投 影遮光線群28A、28B之散焦圖像，所以遠心性沒變化。 亦即，爲了使照度不均更小，在驅動照度不均補正板 23A、23B之後，使用用第1圖之照度量測部42實際量測 曝光領域35P之照度分布E (X)，在此實測値在照度不 均殘存時，以互相抵銷該殘存値微調整照度不均補正板 23A、23B之位置亦可。進而，在此補正動作之後，使用 晶圓台39上之未圖示之照射量監視器，再量測曝光領域 35P之平均照度，較佳從積分感測器19之量測値更新算出 在晶圓上之照度爲目的之係數。藉此對累計曝光量之均一 性以及目標値提升精度。 又，在第8B圖再將曲線61A代之以凹之照度不均被 量測之場合，爲了補正該種情形，在第8A圖藉由於Y方 向更對稱驅動照度不均補正板23A、23B，若將凹之照度 不均補正用之遮光線群29A以及29B之像投影於照明領域 (開口 17a之投影像）內亦可。 又，在使用第1圖之空間像量測系統46量測之遠心性 ，例如在往Y方向之分散量被量測之場合，在第8A圖， 爲了互相抵銷該遠心崩離量，將照度不均補正板23A以及 23B (遮光線群28A和28B)之Y方向之驅動量使之互相 不同。藉此，能同時補正照度不均和遠心性偏離。 43 本纸張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂： -線 544755 A7 _ B7 _ 五、發明說明（f λ) *--------------- (請先閱讀背面之注意事項再填寫本頁) 其次，如在第9Β圖之實線之驅線60Α所表示’在照 度分布Ε (X)，從投影光學系統PL之光軸於X方向以偏 移之位置爲中心之凹之照度不均殘存之場合，如第9Α圖 所示，於Υ方向驅動照度不均補正板23Α、23Β，於照明 領域內，對稱投影凹之照度不均補正用之遮光線群29Α、 29Β之一部份之散焦之像。進而，將照度不均補正板23Α 、23Β僅對應該凹之照度不均之X方向之偏移量之量（定 爲Δ/4)於非掃描方向（在第9圖，於—X方向）一體驅 動。藉此，藉由照度不均補正板23Α、23Β之照度之補正 量，如在第9Β圖之實線之曲線60Β所示，以互相抵銷偏 移之凹之照度不均般被設定。此結果，補正後之非掃描方 向之照度分布Ε (X)以點線之直線60C表示而變得平坦 ，掃描曝光後之晶圓W上之累計曝光量係均一且與目標値 大致一致。 •線. 又，在殘存之照度不均如第7Β圖之直線63C所示之 傾斜不均之場合，在第9Α圖，例如將第1照度不均補正 板23Α驅動於一Υ方向以及+ Χ方向，代替遮光線群29Α ，而將凸之照度不均補正用之遮光線群28Α僅Λ/4偏移 於+ Χ方向配置亦可。此時，藉由調整照度不均補正板 23Α、23Β之Υ方向之驅動量以及X方向之偏移量Δ/4， 能控制傾斜不均之補正量。 在此，針對遮光線群28Α、28Β和29Α、29Β之形狀 以及驅動量和照度不均之補正量之關係說明。首先，就如 先前說明，從可動遮簾13之配置面（標線片面之共軛面） 44 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ____ ___B7 _ 五、發明說明（ψ)) 往標線片面之投影倍率爲Ma，從標線片R往晶圓W之投 影倍率爲石。進而，在晶圓W上之曝光用光之數値孔徑疋 爲NAPL，標線片R上之曝光用光之相千係數（0* )定爲σ ，照度不均補正板23Α和23Β之遮光線之形成面之散焦量 平均値定爲(5Ζ1，該遮光線之掃描方向之寬度定爲FD1 ’ 在標線片面之共軛面之該遮光線之像之模糊寬度6 Y1形成 如下。 5 Yl=2 · 5 Ζ1 · NAPL · σ · /5 · Ma+ FD1 ...(7) 此處，倍率/3爲1/4倍，倍率Ma爲3/2倍’數値 孔徑NPpl爲〇·6〜〇·85，σ (相干係數）爲〇·3〜0.9’散 焦量5 Ζ1爲30 mm，線寬FD1爲0.02 mm時，在該共轭 面上之遮光線之像之模糊寬度占Y1在下面之範圍變化。 約 4.1(mm)&lt; 5 Y1〈約 17.5(mm) ...(8) 又，晶圓上之曝光領域35P之掃描方向之寬度（狹縫 寬度）定爲8 mm時，由第（5)式在標線片面之共軛面上 之狹縫寬度約成爲21 ·3 mm。因而，模糊寬度變成最小之 條件，亦即在數値孔徑NAPL成爲0.6且σ成爲〇·3之條件 ，使用第（7)式之模糊寬度σΥΙ槪算在曝光領域35Ρ內 之靜止狀態之照度不均Fxl時’構成如下。V. Description of the invention (/ A (Please read the notes on the back before filling out this page) The width of the scanning direction in the field of view is used to make the variable purpose. The movable shade 13 is further orthogonal to the scanning direction. The direction (non-scanning direction) corresponds to the size of the pattern area of the reticle R, and the width is used for the purpose of being variable. The information of the number of apertures of the movable curtain 13 is also provided to the exposure control unit 21, and the integral The illuminance obtained by the detection signal of the sensor 19 multiplied by the number of apertures becomes the actual illuminance on the wafer W. In the first figure, the exposure light source 1, the beam matching unit 2, the variable photodetector 3, Beam shaping system 5, fly-eye lenses 6 and 9, lens systems 7A and 7B, lens systems 12A and 12B, movable shutter 13, imaging lens system 15A, sub-condenser lens system 15B, main condenser lens system 16, fixed shutter 17. Illumination unevenness correction plates 23A and 23B, and illumination unevenness correction plate 24 constitute an illumination optical system ILS (lighting system). That is, the fixed shade 17 is disposed even if the movable shade 13 and the illumination unevenness correction plate are arranged, for example. Between 23A and 23bB The surface or the surface near the exit side of the movable shade 13 (between the movable shade 13 and the reflector 14 in this example) is also acceptable. For the other constitution examples, the ruled line of this example is one-sided. Below the wire piece R, the fixed shade 17 may be arranged near the lower face of the reticle R5, or near the surface of the wafer W. That is, although the fixed shade 17 may be arranged on The conjugate surface of the surface of wafer W (the pattern surface of the reticle), but in order to illuminate the exposure light F on the wafer W with respect to the scanning direction SD (the Y direction in this example), F (Y ) To form a ladder shape, for example, it is necessary to form a dimmer in the fixed shade 17. At least one of the unevenness correction plates 23A and 23B and the rough unevenness correction plate 24 may be arranged on the movable shade 13 and the imaging lens system. Between 15A, standard 20 This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 ___ Β7 ___ 5. Description of the invention ([|) Between the line piece R and the main condenser lens system 16, or Between the reticle R and the projection optical system PL. The light source of the exposure light IL 'of the reticle R The image of the circuit pattern in the bright field is transferred to the imaging surface of the projection optical system PL through the telecentric projection optical system PL on both sides at a predetermined projection magnification (for example, 1/4, 1/5, etc.). The slit-shaped exposure area 35P of the photoresist layer on the wafer of the substrate (substrate to be exposed). The reticle R and the wafer W can be regarded as the first object and the second object, respectively. Wafer W It is a disc-shaped substrate such as a semiconductor (silicon, etc.) or SOI (silicon on insulator). Although the projection optical system PL, which is the projection system of this embodiment, is a refractive system, a reflective refractive system and a reflective system may also be used. use. In this case, because the exposure light IL (ArF excimer laser light) of this embodiment is vacuum ultraviolet light, it is largely absorbed by oxygen, carbon dioxide, and water vapor in ordinary air. In order to avoid such a situation, in the optical path of the exposure light IL from the exposure light source 1 to the wafer W of this embodiment, a high purity radon gas (helium, Rare gases such as neon, or so-called inert gases such as nitrogen). Furthermore, although the glass material of the refracting member with high transmittance of vacuum ultraviolet light is limited to synthetic quartz, fluorite (CaF2), and magnesium fluoride (MgF2), fluorite and magnesium fluoride are high-priced materials. Therefore, most of the plural refractive members of the projection optical system PL of this embodiment are composed of synthetic quartz, and the remaining chromatic aberration correction member is composed of edible stone. The refractive element in the illumination optical system ILS is also composed of synthetic quartz. As described below, the direction parallel to the optical axis AX of the projection optical system PL is taken as the Z axis, and along the plane perpendicular to the Z axis along the 21 axis This paper dimension applies the Chinese National Standard (CNS) A4 specification (21〇χ 297) (Mm) (Please read the notes on the back before filling this page) -0-Line 544755 A7 ^ ___ B7_ ____ V. Description of the invention (XM --- I ----------- (Please read first Note on the back side, please fill in this page again) The direction of the scanning direction SD of the reticle R and wafer W at the time of exposure (here is the direction parallel to the paper surface in Figure 1) is taken as the Υ axis' along the orthogonal The direction in the scanning direction, that is, the non-scanning direction in this embodiment (the direction perpendicular to the paper surface in FIG. 1) is taken as the X axis. That is, 'on the reticle R, the illumination optical system ILS The optical axis IAX is the same as the optical axis AX of the projection optical system PL. In this case, the reticle R is adsorbed and held on the reticle table 31. The reticle table 31 may be on the reticle base 32 in the direction of Υ. At the same time, it can be placed in the X direction, the Υ direction, and the rotation direction with a slight movement. The two-dimensional position of the reticle table 31 (the reticle R) and The rotation angle is measured in real time by a laser interferometer in the drive control unit 34. Based on the measurement results and control information from the main control system 22, the drive motors (linear motors and audio coil motors) in the drive control unit 34 are performed Graticule table 31 and position control.-On the other hand, the wafer W is sucked and held on the wafer table 39 by the wafer holder 38, and the wafer table 39 runs along the projection optical system on the wafer base 40. The image plane of the PL moves parallel to the XY plane. That is, the wafer table 39 moves at a certain speed in the Y direction on the wafer base 40 during scanning exposure, and moves stepwise to X during the irradiation exposure. Direction and Υ direction. In addition, the 'Z-leveling mechanism that controls the position (focus position) of the Z direction of the wafer W on the wafer stage 39 and the inclination angles of the rotation of the X axis and the Y axis are also assembled' A plurality of measuring points on the surface (wafer bacteria) of the wafer W. An automatic focus detector (not shown) for measuring the multiple points of the focus position is also set. During exposure, according to the automatic focus detector Measurement: 22 paper rulers with autofocus Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ------ 544755 A7 ____B7___ V. Description of the invention (vl) Drive the Z leveling mechanism to focus the wafer surface on the projection optical system PL (Please read the precautions on the back before filling this page) The position of the X and Y directions of the wafer stage 39 and the rotation angles of the X-axis, γ-axis, and Z-axis rotation are driven by the lightning in the control unit. Real-time measurement by radio interferometer. Based on such measurement results and control information from the main control system, the drive motor (linear motor, etc.) in the drive control unit 41 controls the scanning speed and position of the wafer table 39. The line-main control system 22 sends various information on the moving positions, moving speeds, moving accelerations, and positional deviations of the reticle stage 31 and the wafer stage 39 to the drive control units 34 and 41. Therefore, during scanning exposure, through the reticle table 31 to the illumination area 35 of the exposure light IL, the reticle R is scanned synchronously in the + Y direction (or a Y direction) at the speed Vr and passes through the wafer table 39 The exposure area of the pattern image of the reticle R is 35P. The wafer W is scanned in a Y direction (or + Y direction) at a speed of / 3 · Vr (/ 3 is the projection magnification of the wafer W placed from the reticle R). . In order to prevent the exposure of unnecessary portions at the beginning and end of the scanning exposure at this time, the opening and closing operation of the movable shade 13 is controlled by the driving device unit 34. In addition, the main control system 22 reads out various exposure conditions of the photoresist in each irradiation area on the wafer W for scanning exposure at an appropriate exposure amount from the exposure data file, and the joint exposure control unit 21 performs the most suitable exposure step . That is, if the instruction at the start of scanning exposure to one irradiation area on the wafer W is sent from the main control system 22 to the exposure control unit 21 _, the exposure control unit 21 causes the exposure light source 丨 to start emitting light at the same time through the integral sense The detector 19 calculates the illuminance of the exposure light IL for the wafer W (the pulse per unit time is 23) The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297 public love) 544755 A7 _____B7____ 5. Description of the invention ( &gt; 1) (Please read the precautions on the back before filling out this page.) This integral 値 is reset to 0 when the scanning exposure starts. Therefore, in the exposure control unit 21, the integral 値 of the illuminance is gradually calculated. According to such a result, based on the principle that an appropriate exposure amount can be obtained at each point of the photoresist on the wafer W after scanning exposure, the exposure light source 1 is controlled. Output (starting frequency and pulse energy) and dimming rate of variable dimmer 3. Therefore, at the end of the scanning exposure of the irradiation area, the light emission of the exposure light source 1 is stopped. • For the exposure light IL in this example, in order to use pulsed light with a relatively low oscillation frequency (less than 10 kHz, for example, about several kHz), set the points on the wafer W to be exposed by integer pulses. condition. This means that the number of pulses irradiated at each point on the wafer W forms an integer. In addition, the pulse energy is dispersed to some extent at each light emission, so in order to maintain the control accuracy of the cumulative exposure amount above a predetermined level, in this example, the number of exposure pulses N at each point on the wafer W is set to a predetermined value. The minimum exposure pulse number is an integer greater than or equal to Nmin. In Fig. 1, when the exposure light IL pulses, the fixed curtain 17 is defocused, so the illumination distribution F (Y) in the scanning direction SD (Y direction) of the exposure area 35P on the wafer W is shown in Fig. 15c. Make up a rough ladder shape. In FIG. 15C, when the 値 (maximum 値) on the illuminance distribution F (Y) is set to F0, in this example, the width D of the scanning direction of the illuminance distribution F (Y) at the position where the illuminance forms F0 / 2 It is regarded as the width (slit width_) in the scanning direction of the exposure area 35P. The slit width D on the wafer is, for example, about 8 mm, and the width in the non-scanning direction of the exposure area 35P is 2.5 times (20 mm) to 4 times (32 mm) the slit width 24. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) &quot; '544755 A7 _______B7___ V. The maximum value of the invention description (vf) is acceptable as the limit of the device structure, but the scanning speed is relatively low. Good system meets the practical upper limit of accuracy required for reticle R and wafer W movement control (including position control and speed accuracy, etc.), and the oscillation frequency meets the stability of the center wavelength and wavelength width of the pulsed light The practical upper limit of accuracy that requires precision such as dispersion and intensity. Next, in the case of the plural refracting members in the illumination optical system ILS and the projection optical system PL of this example, although synthetic quartz is mainly used, it continues on synthetic quartz. If it is irradiated with strong pulsed light, it is known that the transmittance will change sequentially due to the deterioration of the material. In addition, the other refracting members and reflective members are also transparent due to their deterioration. It is also possible to sequentially change the emissivity. Furthermore, although in this example, a clean gas that highly removes impurities such as organic matter is supplied in the optical path of the exposure light IL, even if a small amount of residual impurities is present on the refractive member and the reflective member On the surface, the mist-like substance generated by the chemical reaction is attached, and the transmittance (the reflectance in the reflecting member) is sequentially reduced. In these cases, the transmittance changes in the X direction and the Y direction. When it is generated in the same way, the illuminance on the wafer W is uneven, and even the cumulative exposure is not uniform. In this example, the exposure light separated by the beam splitter 11 (monitoring point of energy) in the illumination optical system ILS is used. IL receives light with the integral sensor 19, multiplies the result of this detection by a predetermined coefficient, and indirectly obtains the overall illuminance in the exposure area 35P on the wafer W. Therefore, the transmittance of the optical system as a whole changes in sequence. In this case, for example, by periodically measuring the coefficient, the average exposure of the cumulative exposure of wafer W can be consistent with the target sensitivity defined by the photoresist within the allowable range. 26 Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm)-^ ---------------- (Please read the precautions on the back before filling this page) 訇--Line. 544755 A7 ________B7___ 5. Description of the Invention (A) However, in the case of deformation lighting, in the illumination optical system ILS and the projection optical system PL, due to the optical path and optical axis through which the exposure light IL passes. The optical path that is approximately the same at the center becomes different, so the change in transmittance caused by the deterioration of optical systems and blurring, for example, there is a concern that the X direction (non-scanning direction) becomes different. In this case In the illumination area 35 and the exposure area 35P, dispersion of non-scanning direction illuminance (pulse energy per unit area and per unit time) will occur, that is, uneven illumination. After scanning exposure in each irradiation area on W, scanning exposure The cumulative exposure is also scattered (uneven exposure). When these exceed the allowable range, degradation of resolution or degradation of transfer fidelity may occur, and eventually the yield of the manufactured semiconductor device will decrease. Specifically, in a case where an uneven illumination correction operation is not performed, the uneven illumination may be more than ± 5 to 10% (10 to 20% in width) of the average illumination over a long period of time. In addition, even if the transmittance change occurs in the Y direction (scanning direction), the exposure effect is almost non-uniform due to the integration effect of the scanning exposure. However, for example, when the transmittance change occurs at a defocused position (a position close to the pupil plane) from the conjugate plane of the reticle, the point different from the optical axis is centered, and the telecentricity collapses together with the uneven exposure. (Hereinafter referred to as telecentric deviation), such an amount of disintegration exceeds the allowable range. For example, the area where the reticle is slightly curved downward and the area where the surface of the wafer W is slightly concave and convex will have a lateral deviation of the projected image. Doubts arise from the transfer. This lateral shift constitutes an overlap error when the resolution is degraded or when the exposure is overlapped. Therefore, the projection exposure device in this example is provided with a correction for the uneven illumination caused by the change in transmittance. 27 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) '' '(Please Read the precautions on the back before filling this page). Line · 544 755 A7 ^ __ B7 V. Institution for the purpose of description of invention (yL) and telecentric deviation (hereinafter referred to as the illuminance unevenness correction mechanism). This illuminance unevenness correction mechanism includes an illuminance unevenness measurement mechanism, a telecentricity measurement mechanism, a transmittance distribution control mechanism, a main control system 22 as a control system thereof, and an exposure control unit 21. First, in terms of the illuminance unevenness measurement mechanism, an illuminance measurement unit 42 is fixed near the wafer holder 38 on the wafer table 39 in FIG. 1, and the upper surface of the illuminance measurement unit 42 is in the scanning direction ( Y direction) A CCD-type line sensor 42a (refer to FIG. 15A) having an elongated slit-shaped light receiving section is fixed, and a detection signal S2 of the line sensor 42a is supplied to the exposure control unit 21. A general illuminance unevenness sensor (not shown) composed of a photodetector having a pinhole-shaped light receiving portion is provided on the illuminance measuring device 42. Also, although not shown, an irradiation amount monitor having the entire light-receiving portion of the slow-cover exposure area 35P is provided on the wafer stage 39, and based on the detection signal from the exposure amount monitor and the detection signal from the integration sensor 19 S1: Calculate from the detection signal of the integration sensor 19 as a coefficient for the purpose of indirectly determining the illuminance on the wafer W. Here, referring to Fig. 15, a method of measuring the uneven illumination in the non-scanning direction (X direction) along the slit-shaped exposure area 35P using the line sensor 42a will be described. That is, the measurement of this illuminance unevenness is performed periodically, for example. At this time, the apertured light panel 10 shown in FIG. 1 is driven to switch the lighting mode to normal lighting, deformed lighting, and small 7 ° lighting, etc., and each lighting mode performs measurement of the uneven lighting. Secondly, the state of uneven illumination accompanied by the elapse of the operating time of the projection exposure device of this example is stored in the memory section of the main control system 22 in the form of a table in each illumination mode. 28 (Please read the precautions on the back before filling this page) # Order-·-The size of the thread paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 544755 A7 __B7_____ V. Description of the Invention () Section 15A The figure shows a state where the wafer stage 39 of FIG. 1 is driven, and the line sensor 42a on the measurement unit 42 is moved to a side other than the scanning direction of the exposure area 35P of the projection optical system PL. The exposure area The illuminance distribution F (Y) in the scanning direction SD (Y direction) of 35P has a substantially trapezoidal shape. As shown in Fig. 15C, if the width in the scanning direction of the bottom edge of the illuminance distribution F (Y) is set to DL, the width in the scanning direction of the light receiving portion of the line sensor 42a is set wider than DL. Thereafter, as shown in FIG. 15A, the wafer stage 39 is driven to move the line sensor 42a in a non-scanning direction (X direction) at a predetermined interval in a sequential sequence so as to completely cover the exposure area 35P in the scanning direction. Measuring point. Next, at each measurement point, the exposure light source 1 in FIG. 1 emits pulsed light, and the detection signal S1 of the integration sensor 19 and the detection signal S2 of the line sensor 42a are collected into the exposure control unit 21. Based on all the pixels and the digital data of the detection signal S2 of the integrating line sensor 42a, divided by the digital data of the detection signal S1, as shown in Figure 15B, the illuminance distribution in the non-scanning direction (X) of the exposure area 35P is calculated. E (X). The division by the detection signal S1 of the integral sensor 19 is to remove the influence of the dispersion of the pulse energy. Thus, with the X-direction scanning line sensor 42a, it is possible to easily and quickly measure the illuminance distribution E (X) in the non-scanning direction of the exposure area 35P in a short time. In addition, the illuminance distribution E (X) here is, for example, a relative value based on the illuminance of the first measurement point at the end of the non-scanning direction as a reference. Table 7 \\ 0. As a result, the illuminance distribution E (X) Each position X in the non-scanning direction represents the illuminance on the 35P integral exposure area in the scanning direction (Y direction). 29 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). (Please read first Note on the back, please fill out this page again). Line-544755 A7 _ B7 _ V. Illumination after description of invention. During scanning exposure, each point on the wafer W crosses the area of the illuminance distribution F (Y) of the ladder shape of FIG. 15C in the scanning direction, so the illuminance distribution E (X) in the non-scanning direction in this example It is roughly equal to the distribution of the cumulative exposure amount in the non-scanning direction of each irradiation area on the wafer. In this example, the illuminance distribution E (X) is expressed as a function of the position X in the non-scanning direction as follows. The origin of the position X is a straight line parallel to the Y axis through the optical axis AX of the projection optical system PL. E (X) = a · (X—b) 2 + c · X + d (4) In equation (4), each coefficient is expressed as follows: The second-order coefficient a is related to the position X convex (a &gt; 0) Or concave (a &lt; 0) Illumination unevenness, the offset coefficient b is the amount of deviation from the optical axis AX of the symmetrical axis of the uneven illumination toward the X direction, the primary coefficient c is the so-called tilt unevenness, and the coefficient d is uneven. Follow a certain illuminance (offset) of the X axis. These coefficients a to d, for example, can be obtained from the actual measured data according to the minimum automultiplication method. The obtained 値 is in a state where the illumination intensity is not uniform in the non-scanning direction (that is, the cumulative exposure amount distribution in the non-scanning direction). Be remembered. Specifically, in FIG. 15B, the coefficient a of the illumination distribution E (X) becomes positive 变为 (unevenness of convex illumination), the coefficient 値 of coefficients b and c is 0, and the coefficient d becomes positive 値. In this example, although the illuminance distribution E (X) is approximated by a quadratic function of position X, E (X) may be approximated by a function of 3 or more positions of X, and an approximate expression such as an exponential function may also be used. 〇Going back to FIG. 1, one step further, a scanning plate 43 made of a glass substrate is provided near the wafer holder 38 of the wafer table 39, and a substantially square opening pattern is formed in the light shielding film on the scanning plate 43. 43a. Secondly, China National Standard (CNS) A4 specification (21 × X 297 mm) applies to 30 paper sizes (please read the notes on the back before filling this page) #. · —Line · 544755 A7 B7 ~ 5: ----- 5. Description of the invention (r) A condenser lens and a photodetector 45 are provided on the bottom surface of the scanning plate 43 in the wafer stage 39, and are constituted by the scanning plate 43, the condenser lens 44 and the photodetector 45 as The spatial image measurement system 46 of the measurement mechanism and the detection signal S3 of the photodetector 45 are supplied to a calculation unit in the exposure control unit 21. When measuring the telecentricity of the exposure light IL wafer W, for the reticle R, a test reticle composed of a predetermined plurality of evaluation marks is placed. Furthermore, the exposure light IL is made to emit light, and the positions of the X-direction and the Y-direction of the images for evaluation are measured by the spatial image measurement system 46. After that, the wafer stage 39 only changes the focal position (the position of the optical axis AX direction of the projection optical system PL) at predetermined intervals, and then measures the positions of the X- and Y-directions of the images for evaluation marks. As a result, the energy was measured by the amount of the lateral deviation from the position of the image of the evaluation mark at the two focal positions toward the X and Y directions. Alternatively, instead of using a test reticle, the spatial image measurement system 46 may detect an image of a reference mark (not shown) formed on the reticle table 31 to calculate the amount of telecentric deviation. Next, the transmittance distribution control mechanism which is a part of the illuminance unevenness correction mechanism of this example will be described in detail. In Fig. 1, the transmittance distribution control means is constituted by the illuminance unevenness correction plates 23A and 23B, the rough illuminance unevenness correction plate 24, the drive mechanism 20, and the drive system 25. Figures 2A and 2C are top views of the shading patterns of the illuminance unevenness correction plates 23A and 23B, respectively. Figure 2B is a top view of the fixed shade 17 in Figure 1. Here, Figure 2 shows the fixed shade π. Projected on the setting surface of the movable shade 13, that is, the state of the common plane of the one-sided marking line. In Figure 2, the non-scanning direction (X direction) and scanning on the reticle are applied. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before reading) (Fill this page)-#-线 544755 A7 ___B7_ V. Description of the invention (^ σ) (Please read the notes on the back before filling this page) The directions (γ direction) are set to X direction and Υ direction, respectively. In the following description, the projection magnification from the installation surface of the movable shade 13 (the conjugate surface of the reticle sheet surface) to the reticle sheet surface is set to Ma. For example, if the projection magnification Ma is 3/2 times (magnification), the projection magnification from the reticle to the wafer surface / 3 is 1/4 times, and the slit width D of the exposure area 35P on the wafer W is 8 mm. The width DY1 in the Y direction of the slit-shaped opening 17a of the fixed shade 17 in FIG. 2B is obtained as follows. DY1 = 8 · (1 / ^) · (1 / Ma) = 8 · 4 · (2/3) = 21.3 (mm) (5)-line · Also, as shown in Figure 2A, the first illuminance is not The pattern surface of the correction plate 23A is uniformly formed to form light-shielding line groups 28A and 29A so as to hold the transmission portion 23Aa of the width DY2 (&gt; DY1) in the Y direction. The first light-shielding line group 28A has a plurality of light-shielding lines 26 that are thickened in a quadratic function at a position X corresponding to the position X in the non-scanning direction, compared to the line width of the central portion of the two ends. P2 configuration arrangement. That is, in Fig. 2 for the sake of simplicity (the same applies to the subsequent figures), the light-shielding line group 28A is composed of four light-shielding lines 26, but actually the light-shielding line group 28A is composed of, for example, 50 light-shielding lines 26. More specifically, in order to prevent the generation of the diffraction pattern by the exposure light IL, a plurality of light shielding lines 26 are sequentially arranged from the pitch P2 at intervals of approximately every P2 / 10 to P2 / 100 in the Y direction. arrangement. In the illumination area 35 of the reticle R in FIG. 1, an image of one light-shielding line 26 is projected. In order to reduce the transmittance of the central portion of the exposure light IL, the light source corresponds to the formula (4). It can correct the uneven illuminance unevenness of e · X2 (e &gt; 0). By projecting the image of the light-shielding line 26 of η (1,2, 3 · · · ·), it will correct η 32. This paper size is applicable China National Standard (CNS) A4 Specification (210 X 297 mm) 544755 A7 ______B7___ V. Invention Description 1) (Please read the precautions on the back before filling this page) • e · The uneven illumination of X2 is uneven. The magnitude of the coefficient e depends on the shape of the shading line 26, and the magnitude is stored in the memory portion of the predetermined main control system 22. Therefore, the light-shielding line 26 can be referred to as "the second light-shielding line j ° for convex illuminance unevenness correction.-On the other hand, the second light-shielding line group 29A in Fig. 2A is more than the two ends of the central portion. The line width is a complex number that becomes a quadratic function with respect to the position X (though there are four in FIG. 2 but actually about 50). The light-shielding lines 27 are sequentially spaced from P2 to P2 / 10 ~ P2 / 100 degrees of change are arranged in the Y direction. As a result, by projecting an image of one light-shielding line 27 in the illumination area 35 in FIG. 1, the light is transmitted to the central portion of the exposure light IL. If the rate becomes higher, the uneven illumination of -e · X2 can be corrected, and the uneven illumination of n · e · X2 can be corrected by projecting an image of the light-shielding line 27 of η. Therefore, the shading line 27 It can be called "the second light-shielding line for the correction of uneven illumination unevenness". In addition, the light-shielding lines 26 and 27 can form, for example, a light-shielding film coated with chromium (e.g., vapor deposition) on a substrate that has passed through the light for exposure. Instead of the light-shielding film, a translucent film that transmits light for exposure at a predetermined transmittance may be used. Furthermore, in this example, in order to irradiate the pulsed light, during the period T1L of the pulsed light, when the wafer W travel distance is set to dw, the distance dw is converted to the distance dw of the conjugate plane of the above-mentioned reticle plane. (1 // 5) · (1 / Ma) is set to be different from the pitch P2 by, for example, 10% or more. Furthermore, 'the distance dw · (1 / $) · (Ι / Ma) and the distance P2 are set to be different from each other by an integer multiple of 10% or more. With this, for example, one of the light-shielding wire groups 28A and 29A on the wafer W is a light-shielding wire 26 and ~ 27 33. The standard is applicable to the Zhongguanjia Standard (CNS) A4 specification (21G X 297 public love) &quot;- -544755 A7 _B7___ 5. The defocused image of the invention can be prevented from being transferred. In addition, as shown in FIG. 2C, the light shielding line group 29B for concave unevenness correction and the light shielding line group 28B for convex unevenness correction are formed on the pattern surface of the second illumination unevenness correction plate 23B. The transmission portion 23Ba of the width DY2 is held in the Y direction. The shading line groups 28B and 29B have the same shape as the shading line groups 28A and 29A of the first unevenness correction plate 23A, respectively, and the shading patterns of the unevenness correction plates 23A and 23B are reversed relative to each other with respect to an axis parallel to the X-axis (axis Symmetry). As described above, although the first uneven illumination correction plate 23A can correct uneven illumination unevenness of the convex or concave portions, by using two mutually uneven illumination unevenness correction plates 23A and 23B, the telecentric deviation from the scanning direction can be suppressed. At the same time, it can correct the tilt unevenness (the coefficient c) of the formula (4) (described in detail later). As described above, by projecting the images of the shading lines 26 and 27 in the illumination area 35, the transmittance of the exposure light IL can be controlled transparently. However, when the images of the shading lines 26 and 27 are too sharp, even if the integration effect of scanning exposure is taken into consideration, there is a portion on the wafer that does not satisfy the condition of the so-called exposure with the exposure pulse number N of formula (1). doubt. In order to prevent this, the light-shielding patterns of the illuminance unevenness correction plates 23A and 23B in FIG. 1 are formed on opposite sides of each other, and the light-shielding pattern forming surface is provided at a relatively fixed shade relative to the conjugate surface of the reticle. 17 larger defocus positions. Furthermore, the light-shielding lines 26 and 27 are made as fine as possible. For example, the shading lines 26 and 27 can correct uneven shapes of uneven illuminance in the non-scanning direction of the convex and concave to an average of ± 0.05% (0.1% in terms of width). In addition, the light-shielding thread groups 28A, 28B, 29A, and 29B have 34 light-shielding threads of 50 degrees, respectively. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --------- ------- (Please read the notes on the back before filling this page) Order--line 544755 A7 --------- B7_ V. Description of the invention) 26 and 27, so for the whole With a resolution of 0.1% in width, it is possible to correct uneven illumination in the non-scanning direction of the convex and concave areas from 0 to 10% in terms of width. In addition, the defocus amount of the conjugate plane of the reticle one-sided surface of the shading line forming surface of the illuminance unevenness correction plates 23A and 23B is set to 5Z1, and the exposure on the illuminance unevenness correction plates 23A and 23B is used for exposure. The number of light and the aperture are set to NAil, and when the line width in the scanning direction of the thickest part of the shading lines 26 and 27 is set to FD1, the defocus amount 5 Z1 is preferably set to satisfy the following formula. (5 Zl> FD1 / (2 · NAil) (6) That is, when the light-shielding lines 26 and 27 are replaced with a dot pattern using a small majority as described later, the line width FD1 is replaced at these points. It is also possible to use the width in the scanning direction of the maximum dot pattern within the pattern. By satisfying the condition of formula (6), in the lighting field 35 of the reticle R, the images from both ends of the shading lines 26 and 27 are The point where the light is completely shielded from light becomes' the unevenness of the illuminance in the stationary state is also reduced. Therefore, the unevenness of the cumulative exposure amount during the scanning exposure is further reduced. In this way, the unevenness correction plates 23A and 23B of this example can Increasing the defocus amount 5Z1, it is also possible to arrange the illuminance unevenness correction plates 23A and 23B at the defocus positions on the exit side of the movable shade 13. Specifically, in FIG. 2A, both ends of the convex light-shielding line 26 The width of the part is 0, and the width of the central part is about 20 # m. Similarly, the width of the central part of the concave light-shielding line 27 is 0, and the width of both end parts is about 20 / zm. Furthermore, the pitch P2 is shifted. The amount is about 5 / zm. In addition, the unevenness of the illuminance unevenness of the conjugate plane of the reticle one-sided correction plate 23A, 23B5 1 example If it is about 30mm, the defocus amount of fixed shade 17 is set to 丨 / 10 35 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling (This page) I. Line 544755 A7 ___ Β7__, φ V. Description of the invention (degree. Figure 3A is a schematic diagram showing the defocused state of the illumination unevenness correction plate 23A (also the same as 23B) and the fixed blind 17. In this FIG. 3A, the conjugate plane RC fixed shade 17 (correctly, the conjugate image) is defocused slightly along the optical axis (Z direction), and the uneven illumination correction plate 23A is largely defocused. As a result, the exposure light IL3 passing through the side portion 17a (correctly the conjugate image of the side portion) on the fixed curtain 17 becomes slightly wider on the conjugate surface RC (and the wafer surface), so the first The illuminance distribution of the exposure area 35P in the figure forms a ladder shape in the scanning direction SD. In FIG. 3A, the illuminance distribution on the conjugate surface RC of the exposure light IL3 passing through the fixed curtain 17 is represented as 17b, which is approximately trapezoidal. In Fig. 3A, the exposure light IL2 is passed through the side of the shading line 26 on the unevenness correction plate 23A. Since the circular area with a diameter approximately 1/2 to 1 times the width of the scanning direction SD of the opening of the blind curtain Π on the conjugate plane RC is widened, the conjugate plane RC and even the wafer The exposure area 35P shading line 26 on W is projected under a large defocus state. When scanning exposure is performed in this state, the points on the wafer are shown in Figure 3B, and the SD integral in the scanning direction can be obtained at The cumulative exposure amount E of the illuminance in the illumination area on the conjugate plane RC of FIG. 3A. In the state without the light-shielding line 26, when the cumulative exposure amount is substantially flat for the position X, the light-shielding line 26 is configured to accumulate the exposure. The amount E is represented by a curve 52 and forms a substantially concave distribution with respect to the position X. This means that by defocusing the light-shielding line 26 and projecting it, it is possible to control the non-scanning direction distribution of the cumulative exposure amount on the wafer. This reason will be described later. Also, the photo 36 from Figure 3A (please read the notes on the back before filling in this page) Order · ·-The paper size of the thread is applicable to China National Standard (CNS) A4 (210 X 297 mm) 544755 A7 _____B7____ V. Description of the Invention (0) The exposure light IL1 of the point of greater unevenness of the degree unevenness correction plate 23A is the exposure light of the coarseness unevenness correction plate 24 from FIG. 1. Next, the structure of the shading pattern of the rough illuminance unevenness correction plate 24 in the illuminance unevenness correction mechanism will be described with reference to FIG. 5. Fig. 5 shows a state in which the rough illuminance unevenness correction plate 24 is projected on the one side of the standard bud spring in Fig. 1. Here, in Fig. 5, the rough illuminance unevenness correction plate 24 is spaced DY4 in the scanning direction SD (Y direction). , Forming convex light-shielding lines 26A, 26B, 26C in which the width of the central portion is sequentially thinned, and concave light-shielding lines 27C, 27B, 27A in which the width of both ends is sequentially widened. The pitch DY4 is set to be wider than the width DR of the scanning area 35 in the scanning direction. The driving mechanism 20 in FIG. 1 drives the rough unevenness correction plate 24 in the Y direction to select a shading line in the lighting field 35. 26A to 26C, 27A to 27C are not projected, and a state of projecting a defocused image of any of the light-shielding lines 26A to 26C, 27A to 27C is formed. In this case, the thinnest light-shielding lines 26C and 27C are light-shielding patterns composed of a quadratic curve that has a correction effect of 100 degrees of light-unevenness unevenness on the light-shielding lines 26 and 27, respectively. The light-shielding lines 26B, 27B and 26A and 27A are light-shielding patterns composed of a quadratic curve that has two or three times the shading lines 26C and 27C, respectively. Therefore, by selecting the light-shielding lines 26A, 26B, and 26C with the driving mechanism 20, it is possible to correct uneven illuminance unevenness of about 30% in terms of width, non-scanning direction, uneven uneven illuminance of about 20%, and 10%. The uneven illuminance of the convexity can be corrected by the driving mechanism 20 by selecting the light-shielding lines 27A, 27B, and 27C. The uneven illuminance of the concave is approximately 30% of the width in the non-scanning direction. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling this page)-, line 544755 A7 ______B7____ V. Description of the invention ((Please read the notes on the back before filling (This page) The uneven illuminance unevenness of degree and the uneven illuminance unevenness of 10% degree. Also, because the maximum line width of the occlusion lines 26A to 27C is wider than the shading lines 26 and 27 in FIG. 2, Therefore, in order to satisfy the condition of exposure with the integer pulse number of the formula (1) on the wafer as a whole, the rough illuminance section will adjust the defocus amount of the correction plate 24 to the unevenness correction plates 23A and 23B. Set it between 1.5 and 2 times. -Line · Also, such a large uneven illumination The correction can also be achieved by increasing the number of light shielding lines 26 and 27 of the illuminance unevenness correction plates 23A and 23B in FIG. 2 to 200 to 300, respectively. However, in this case, the The number of defocused images in the exposure field 35P shading lines 26 and 27 becomes too much, and the conditions for exposure with integer pulse numbers of the formula (1) are partially unsatisfactory. In other words, by using the coarseness of this example The illuminance unevenness correction plate 24 not only satisfies the conditions for exposure with an integer number of pulses, but also approximately corrects unevenness in convexity or concavity in a non-scanning direction in a unit of approximately 10% width. The use conditions, etc., where the illuminance unevenness in the non-scanning direction is less than 10% in terms of width, the rough illuminance unevenness correction plate can be omitted. Secondly, for the illuminance unevenness correction plate 23A in the drive mechanism 20 of FIG. 1 An example of the configuration of the drive mechanism of 23B and 23B is described with reference to FIG. 6A is a plan view showing the drive mechanism of the unevenness correction plates 23A and 23B, FIG. 6B is a front view thereof, and FIG. 6C is a side view thereof. 6A ~ 6C, the figure will correspond The non-scanning direction (X direction) and scanning direction (f direction) in Figure 1 are set to be the same as the X direction and the Y direction. 38 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 ____ B7_ 5. In the description of the invention (please read the precautions on the back before filling out this page), the lighting area 35C and the conjugate area of the reticle R in Figure 1 are shown in the lighting area 35C. In Figures 6A to 6C A pair of guide members 54A and 54B are fixed to a pair of guide members 54A and 54B parallel to the X direction on a support member (not shown). The guide members 54A and 54B slide open in the X direction at the center to allow light for exposure to pass through. A frame-shaped X-axis slider 53 is arranged, and the X-axis slider is driven in the X direction by a drive motor 55 such as a feed bolt method. Line-On the X-axis slider 53, a frame-shaped first Y-axis slider 56A is arranged through a pair of guide members 58A parallel to the Y-axis, and the opening of the central portion of the Y-axis slider 56A is as shown in FIG. 6D. As shown in the figure, the first illuminance unevenness correction plate 23A is held, and the Y-axis slider 56A is driven in the Y direction by a drive motor 57A that is fixed to the feed bolt method of the X-axis slider 53. In order to cover the first Y-axis slider 56A, a frame-shaped second Y-axis slider 56B is arranged on the X-axis slider through a pair of guide members 58B parallel to the Y-axis. As shown in FIG. 6E, the second illuminance unevenness correction plate 23B is held, and the Y-axis slider 56B is driven in the Y direction by a drive motor 57B that is fixed to the feed bolt method of the X-axis slider 53. Although not shown at this time, the X-axis slider 53 and the Y-axis sliders 56A and 56B are respectively equipped with linear encoders of the X-axis and Y-axis, such as optical, electrostatic capacitance, or electromagnetic type, which can be decomposed. The motors 55A and 57B of the Y-axis drive motors 57A and 57B respectively measure the linear motors of the corresponding X-axis and Y-axis and are driven. In this way, the position of the illumination unevenness correction plates 23A and 23B can be determined independently of the scanning direction / direction (Y direction) for the illumination area 35C, and the illumination unevenness correction can be positioned in the non-scanning direction relative to the illumination area 35C. Plates 23A and 23'B. So in this example, the non-scanning 39 paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 ______B7 _ 5. Description of the invention (please read the precautions on the back before filling this page) Although the illuminance unevenness correction plates 23A and 23B are driven integrally in the drawing direction, in order to compensate for the uneven tilt within the illuminance unevenness, it is preferable that the illuminance unevenness correction plates 23A and 23B can be mutually Constructed like an independent drive. Next, using the illuminance unevenness correction mechanism of this example, referring to FIGS. 4 and 7 to 9, an example of an operation for correcting the illuminance unevenness will be described. In the following description, the illuminance unevenness correction plates 23A and 23B and the fixed shade 17 will be represented by the state of the conjugate surface (the disposition surface of the movable shade 13) projected on the reticle of the first figure. At this time, since the illuminance unevenness correction plates 23A and 23B and the fixed curtain Π are defocused from their conjugate planes by a predetermined amount, a predetermined blurring occurs in the projected images in these areas. Therefore, in order to show the defocused state of such projection images, as shown in FIG. 7, from the shading line of the uneven illumination correction plates 23A and 23B and the end of the opening of the fixed curtain 17 is covered by 1 point. The defocused images projected onto the conjugate surface are shown as overlapping. -Line- FIG. 4A is a plan view showing the second illuminance unevenness correction plate 23B, FIG. 4B is an enlarged view of the concave light-shielding line 27 in FIG. 4A along the Y direction, and FIG. 4C is a view of FIG. 4A An enlarged view of the convex light-shielding line 26 in the Y direction, in FIG. 4A, by passing through a plurality of imaginary points along a center line of two light-shielding lines 26 at both ends of the light-shielding line group 28B and along the light-shielding The defocused images 51 formed on the imaginary points of one of the two lines of the center line of the two light-shielding lines 27B at both ends of the line group 29B are formed on the conjugate plane of the one-sided plane of the reticle. Means. This means that the images of the shading lines 26 and 27 are projected on the wafer in a defocused state, not only in the form of prototypes. 40 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 __B7 c V. Description of the invention ($ /) First, Figure 7A shows that in order to make 1 pair of uneven illumination correction plate 23A The defocused image 51B of the light groups 28A, 28B, 29A, and 29B, respectively, from 23B (the image of an imaginary point along the centerline of the shading line group), does not enter the opening 17a of the fixed curtain Π X In the defocused image 51S of the edge of the direction, the illuminance unevenness correction plates 23A and 23B are not moved to the outside of the scanning direction SD at all, that is, the illuminance unevenness correction in the illumination area 35 of FIG. 1 is not performed. Correction of uneven illumination of plates 23A and 23B. At this time, the correction of the unevenness of the illuminance by the rough unevenness correction plate 24 is not performed. In this state, the illumination measurement unit 42 shown in FIG. 1 is used to describe FIG. 15A to measure the illuminance distribution E (X) in the non-scanning direction (X direction) on the exposure area on the image plane of the projection optical system PL. ), That is, the cumulative exposure amount distribution in the scan direction on the wafer W. Fig. 7B shows various examples of the measurement results of the illuminance distribution E (X). Here, in Fig. 7B, the horizontal axis represents the position in the X direction in the exposure area 35P, and the vertical axis represents the X at each position.値 E (X) of the illuminance of the direction integral. This is also the same in FIGS. 8B and 9B below. Therefore, in Fig. 7B, when the measurement result of the illumination distribution E (X) is as flat as the solid line 62, the illumination unevenness correction plates 23A and 23B and the illumination unevenness correction plate are not used. It is not necessary to make corrections. In this regard, the measurement results of the illuminance distribution E (X) in the non-scanning direction indicate uneven illuminance on a convex line indicated by a curved line 63A, uneven illuminance on a concave line indicated by a curved line 63B, and Straight line 63C indicates uneven lightness or other uneven light intensity, and when the uneven light intensity exceeds the average 値 ± 0.1 41 (please read the precautions on the back before filling in this page). China National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 ^ _____ B7____ V. Description of the invention (about 3% (0.2% in terms of width)) The control of the main control system 22 in Figure 1 The illuminance unevenness is corrected below. When the illuminance unevenness is, for example, about 10% or more in width, the position of the coarse illuminance unevenness correction plate 24 is initially determined in the scanning direction SD as shown in FIG. 5. The projection image of the appropriate light-shielding line in the light-shielding 26A to 27A is projected into the lighting field, so that the unevenness of illumination in the non-scanning direction is narrowed to about 10% in terms of width. In this way, the unevenness-correction plate 23A, 23B Corrects the residual uneven illumination. As shown by the solid curve 61A in FIG. 8B, when uneven illuminance distribution of the illuminance distribution E (X) remains, as shown in FIG. 8A, the illuminance unevenness correction plates 23A and 23B are compared with the illumination optical system. The optical axis IAX is symmetrically driven in the Y direction, and a part of the shading line group 28A for convex uneven illumination correction of the uneven illumination correction plate 23A is projected symmetrically in the illumination area (projection image of the opening i7a), and The defocused image of the shading line group 28B used for the correction of the uneven illumination unevenness correction plate 23B. The driving amount of the illumination unevenness correction plates 23A and 23B at this time, the correction amount of the illumination is as shown in FIG. 8B The curve 61B of the line is set to offset the uneven illuminance of the convexity. As a result, the illuminance distribution E (X) in the non-scanning direction after correction is flat as shown by the dotted line 61C. In this case, the actual Measure the relationship between the driving amount of the predetermined illuminance unevenness correction plates 23A and 23B and the correction amount of the illuminance unevenness, memorize the relationship in the hundred million units in the main control system 22, and set the main control system 22 based on the memorized relationship Illumination unevenness correction drive amount of 23 people, 23B. By correcting the uneven illumination, it can be understood from Figure 8B that the average illumination is reduced. The measurement from the integral sensor 19 of Figure 1 is 42. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297). Mm) ~ (Please read the notes on the back before filling this page) Order-. Line 544755 A7 ___B7 ___ V. Description of the invention (屮 /) 补 The correction of the coefficient for the purpose of calculating the illumination on the wafer W is also performed As a result, the cumulative exposure amount of each irradiated area on the wafer W after the scanning exposure is approximately uniform, and is approximately the same as the target value. In this case, since the defocused images of the light-shielding line groups 28A and 28B are projected symmetrically in the Y direction in the lighting field in this example, the telecentricity does not change. That is, in order to make the illuminance unevenness smaller, after the illuminance unevenness correction plates 23A and 23B are driven, the illuminance distribution E (X) of the exposure area 35P is actually measured by the illuminance measurement section 42 in FIG. 1, and here In actual measurement, when the uneven illumination persists, the positions of the uneven illumination correction plates 23A and 23B may be fine-adjusted by offsetting the residual. Furthermore, after this correcting action, an unillustrated irradiation amount monitor on the wafer stage 39 is used to measure the average illuminance in the exposure area 35P. It is preferable to update the calculation in the crystal from the measurement of the integration sensor 19 The illuminance on the circle is the coefficient for the purpose. This improves the uniformity of the cumulative exposure and target accuracy. In FIG. 8B, when the curve 61A is replaced by a concave illuminance unevenness measurement, in order to correct this situation, in FIG. 8A, the illuminance unevenness correction plates 23A and 23B are driven more symmetrically in the Y direction. It is also possible to project the images of the light-shielding line groups 29A and 29B used for the correction of the concave illuminance unevenness in the illumination area (projection image of the opening 17a). In addition, when the telecentricity measured by the aerial image measurement system 46 in FIG. 1 is used, for example, when the dispersion amount in the Y direction is measured, in FIG. 8A, in order to offset the telecentric disintegration amount, The driving amounts in the Y direction of the illuminance unevenness correction plates 23A and 23B (light-shielding line groups 28A and 28B) are different from each other. This makes it possible to simultaneously correct uneven illumination and deviation from telecentricity. 43 This paper size applies to China National Standard (CNS) A4 (21〇X 297 mm) (Please read the precautions on the back before filling this page) Order: -line 544755 A7 _ B7 _ V. Description of the invention (f λ) * --------------- (Please read the precautions on the back before filling this page) Secondly, as indicated by the driving line 60Α of the solid line in Figure 9B Distribution E (X), when uneven illumination unevenness from the optical axis of the projection optical system PL centered at the offset position in the X direction remains, as shown in FIG. 9A, the illumination unevenness correction plate is driven in the Υ direction 23A and 23B are defocused images of part of the shading line group 29A and 29B used for correction of uneven illumination unevenness of symmetrical projections in the field of lighting. Furthermore, the illuminance unevenness correction plates 23A and 23B are shifted by an amount corresponding to the X direction of the uneven illuminance unevenness (determined as Δ / 4) in the non-scanning direction (in Fig. 9, in the -X direction). Integrated drive. Thereby, the illuminance unevenness correction plates 23A and 23B are set to compensate for the uneven illuminance unevenness of the offset as shown by the curve 60B of the solid line in FIG. 9B. As a result, the illuminance distribution E (X) in the non-scanning direction after correction is represented by a dotted line 60C and becomes flat, and the cumulative exposure amount on the wafer W after scanning exposure is uniform and approximately consistent with the target 値. • Line. In the case where the remaining uneven illumination is uneven as shown by the straight line 63C in FIG. 7B, in FIG. 9A, for example, the first illumination unevenness correction plate 23A is driven in a single direction and + χ Instead of the light-shielding line group 29A, the light-shielding line group 28A used for correction of uneven illuminance unevenness may be arranged by shifting only Λ / 4 in the + X direction. At this time, by adjusting the driving amount in the Υ direction of the illuminance unevenness correction plates 23A and 23B and the shift amount Δ / 4 in the X direction, the correction amount of the unevenness of the tilt can be controlled. Here, the relationship between the shapes of the light-shielding line groups 28A, 28B and 29A, 29B, and the amount of driving and the amount of correction of uneven illumination will be described. First of all, as explained earlier, from the configuration surface of the movable shade 13 (the conjugate surface of the reticle one-sided) 44 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 ____ ___B7 _ 5 (Explanation of the invention (ψ)) The projection magnification to the reticle is Ma, and the projection magnification from the reticle R to the wafer W is stone. Further, the number of exposure light 値 aperture 疋 on the wafer W is NAPL, the phase coefficient (0 *) of the exposure light on the reticle R is set to σ, and the shading of the illuminance unevenness correction plates 23A and 23B is blocked. The average defocus amount of the line forming surface is determined as (5Z1, and the width of the light-shielding line in the scanning direction is FD1 '. The blurring width 6 Y1 of the image of the light-shielding line on the conjugate plane of the reticle is formed as follows. 5 Yl = 2 · 5 Zn1 · NAPL · σ · / 5 · Ma + FD1 ... (7) Here, the magnification / 3 is 1/4 times and the magnification Ma is 3/2 times. The number of apertures NPpl is 0.6 ~ 〇 · 85, σ (coherence coefficient) is 0.3 ~ 0.9 'Defocus amount 5 Zn1 is 30 mm, and line width FD1 is 0.02 mm, the blur width of the image of the light-shielding line on the conjugate surface accounts for Y1 Change in the following range: Approx. 4.1 (mm) &lt; 5 Y1 <approximately 17.5 (mm) ... (8) When the width (slit width) in the scanning direction of the exposed area 35P on the wafer is set to 8 mm, the equation (5) is used to mark the line. The width of the slit on the one-sided conjugate surface is approximately 21.3 mm. Therefore, the condition that the blur width becomes minimum, that is, the condition that the numerical aperture NAPL becomes 0.6 and σ becomes 0.3, using the blur width σΥ1 of the formula (7) to calculate the illuminance in the static state in the exposure area 35P is not In the case of all Fxl's, the constitution is as follows.

Fxl = {FDl · (5 Υ1/(ττ · 5 Yl2)} · 100(%) = [0.024 · 4.1/( 7Γ · 4.12 · )] · 100 ...(9) 因此可了解遮光線群28A、29A之散焦投影像對照度 不均完全沒有不良之影響。又’該照度不均Fxl藉由掃描 曝光之積分效果’實際上更大爲減低。 45 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) 1]_ · -線 544755 A7 B7 五、發明說明 根據這些結果，將遮光線群28A、29A之形狀以及驅 動量和非掃描方向之照度不均（累計曝光量之非掃描方向 之分散）之補正量之關係，藉由電腦之模擬求得之結果表 示於表1。此時散焦量5 Z1定爲30mm。在表1，線數係遮 光線群28A、29A中之遮光線26、27之根數，線寬（FD1 )(mm)係遮光線26、27之最大寬度，線間隔係遮光線 26、27之掃描方向之間距。但是，如已說明者，線間隔爲 了防止繞射光之發生，設定爲以每0.005mm依序變狹，表 1之線間隔以近似値表示剛進入照明領域內之遮光線之間 距。遮光寬度（mm)係遮住曝光用光之全部之遮光線26 、27之最大寬度之合g十値，亦即線數和線寬之積，驅動量 (mm)係在第7圖之照度不均補正板23A、23B之Y方向 之對稱移動量，照度不均補正量（％)係對非掃描方向之 照度之平均値之照度不均之補正量之寬度。 《表1》 線數 線見 線間隔 遮光寬度 驅動量 照度不均補正量 (mm) (mm) (mm) (mm) % 2 0.02 0.200 0.04 0.20 0.19 4 0.02 0.199 0.08 0.40 0.38 6 0.02 0,198 0.12 0.60 0.56 8 0.02 0.197 0.16 0.79 0.75 10 0.02 0.196 0.20 0.99 0.94 20 0.02 0.191 0.40 1.96 1.88 30 0.02 0.186 0.60 2.90 2.81 46 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） •---------------- (請先閱讀背面之注意事項再填寫本頁) 言·Fxl = {FDl · (5 Υ1 / (ττ · 5 Yl2)} · 100 (%) = [0.024 · 4.1 / (7Γ · 4.12 ·)] · 100 ... (9) Therefore, we can understand the shading line group 28A, The unevenness of the contrast of the defocused projection image of 29A has no adverse effect at all. And the 'integral effect of the uneven illumination Fxl by scanning exposure' is actually much smaller. 45 This paper standard applies Chinese National Standard (CNS) A4 Specifications (210 x 297 mm) (Please read the precautions on the back before filling out this page) 1] _--Line 544755 A7 B7 V. Description of the invention Based on these results, the shape and driving capacity of the light-shielding line group 28A, 29A The relationship between the non-scanning direction illuminance unevenness (accumulated exposure amount and non-scanning direction dispersion) is calculated by computer simulation. The results are shown in Table 1. At this time, the defocus amount 5 Z1 is set to 30mm. In Table 1, the number of lines is the number of the light-shielding lines 26 and 27 in the light-shielding line groups 28A and 29A, the line width (FD1) (mm) is the maximum width of the light-shielding lines 26 and 27, and the line interval is the light-shielding lines 26 and 27. The distance between the scanning directions. However, as stated, the line interval is set to be 0.005mm to prevent the occurrence of diffracted light. Sequentially narrowed, the line spacing in Table 1 is approximated by the distance between the light-shielding lines that have just entered the lighting field. The light-shielding width (mm) is the sum of the maximum widths of the light-shielding lines 26 and 27 that cover all the light used for exposure. Ten points, that is, the product of the number of lines and the line width, the driving amount (mm) is the symmetrical movement amount in the Y direction of the illumination unevenness correction plates 23A and 23B in FIG. 7, and the illumination unevenness correction amount (%) is The width of the non-scanning direction average 値 illuminance unevenness correction amount. "Table 1" Line number line see line interval shading width drive amount Illumination unevenness correction amount (mm) (mm) (mm) (mm)% 2 0.02 0.200 0.04 0.20 0.19 4 0.02 0.199 0.08 0.40 0.38 6 0.02 0,198 0.12 0.60 0.56 8 0.02 0.197 0.16 0.79 0.75 10 0.02 0.196 0.20 0.99 0.94 20 0.02 0.191 0.40 1.96 1.88 30 0.02 0.186 0.60 2.90 2.81 46 This paper standard applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) • ---------------- (Please read the precautions on the back before filling this page)

544755 A7 B7 五、發明說明（令f) 40 0.02 0.181 0.80 3.81 3.75 50 0.02 0.176 1.00 4.70 4.96 60 0.02 0.171 1.20 5.57 5.63 70 0.02 0.166 1.40 6.41 6.56 80 0.02 0.161 1.60 7.22 7.50 90 0.02 0.156 1.80 8.01 8.44 100 0.02 0.151 2.00 8.78 9.38 110 0.02 0.146 2.20 9.52 10.31 120 0.02 0.141 2.40 10.23 11.25 130 0.02 0.136 2.60 10.92 12.19 (請先閱讀背面之注意事項再填寫本頁) 線· 實際上，爲了在曝光領域之梯形狀之照度分布（例如 第15C之照度分布F ( Y))之傾斜部遮光線26、27之投 影像之模糊部也進入’而使照度不均之補正量之最大値數 %程度變小。但是，照度不均補正板23A、23B之驅動量 以0.01 mm程度之精度成連繪地控制，爲了在該驅動量大 致成比例能補正照度不均’照度不均能以大致0.01%程度 之精度補正。又，在線數130之場合，遮光線群28A、 29A中之遮光線26、27之根數變爲65，遮光線群28A、 29A之遮光線群28A、29A之掃描方向之寬度變爲10.8mm 〇 由以上之結果，使對應於表1之結果求得照度不均補 正板23A、23B之大小以及掃描方向之驅動行程構成如下 。又，倍率Θ定爲1/4倍，倍率Ma爲3/2倍，遮光線 之像之模糊寬度5Y1爲第（8)式之最大値（17·5ιηΓη)， 47 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 -—---------_____ 五、發明說明（fl ) (請先閱讀背面之注意事項再填寫本頁) 大小之界限定爲12mm，非掃描方向之傾斜不均之補正量 (第9圖之X方向的移動量Λ/4)定爲4mm，掃描方向 之驅動量之界限定爲1.7 mm。 掃描方向之寬度=8 · 4./1.5+ 10.8 · 2 + 17.5 · 2 + 12 (界限）=90 ( mm) ( 10 ) 非掃描方向之寬度=25 · 4/1 ·5 + 17.5 + 4 (傾斜補正 量）+ 12 (界限）=1〇〇 ( mm) ( 11 ) 掃描方向之驅動行程=± ( 17.5+ 10.8+ 1.7 (界限） )=±30 ( mm) (土爲凹凸之區別） （12) 線 亦即，在上述之實施形態，例如定期地使用第1圖之 照度量測部42量測非掃描方向之照度不均，未補正此量測 結果驅動照度不均補正板23A、23B和粗照度不禁一補正 板24。以其它之動作，例如在同種類之別的投影曝光裝置 ’預先量測藉由計時器所量測之作動時間和照度不均之變 化量之關係，將該關係以圖表形式記憶在本例之投影曝光 裝置之主控制系統22之記憶部亦可。在此場合，對應於作 動時間使用該圖表預測照度不均之狀態，爲了補正此預測 照度不均，而藉由驅動照度不均補正板補正板23A、23B 以及粗照度不均補正板，能省略使用照度量測部42之照度 分布之量測動作，及提升曝光步驟之產能。544755 A7 B7 V. Description of the invention (Order f) 40 0.02 0.181 0.80 3.81 3.75 50 0.02 0.176 1.00 4.70 4.96 60 0.02 0.171 1.20 5.57 5.63 70 0.02 0.166 1.40 6.41 6.56 80 0.02 0.161 1.60 7.22 7.50 90 0.02 0.156 1.80 8.01 8.44 100 0.02 0.151 2.00 8.78 9.38 110 0.02 0.146 2.20 9.52 10.31 120 0.02 0.141 2.40 10.23 11.25 130 0.02 0.136 2.60 10.92 12.19 (Please read the precautions on the back before filling out this page) Line · Actually, for the illumination distribution of the ladder shape in the exposure area ( For example, the 15th illuminance distribution F (Y)) of the oblique portion of the shading lines 26 and 27 also enters the blurred portion of the projected image, so that the maximum %% of the illuminance unevenness correction amount becomes smaller. However, the driving amounts of the illuminance unevenness correction plates 23A and 23B are continuously controlled with an accuracy of about 0.01 mm. In order to compensate for the unevenness of the illuminance, the illuminance unevenness can be corrected to approximately 0.01%. Correction. When the number of lines is 130, the number of light-shielding lines 26 and 27 in the light-shielding line groups 28A and 29A becomes 65, and the scanning direction width of the light-shielding line groups 28A and 29A is 10.8 mm. 〇 From the above results, the sizes of the illuminance unevenness correction plates 23A and 23B and the driving strokes in the scanning direction are determined as shown in Table 1 below. In addition, the magnification Θ is set to 1/4 times, the magnification Ma is 3/2 times, and the blur width 5Y1 of the image of the shading line is the maximum value (17 · 5ιηΓη) of the formula (8). 47 This paper scale is applicable to China Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 -——---------_____ V. Description of the invention (fl) (Please read the precautions on the back before filling this page) Size boundary It is limited to 12mm, the correction amount of the non-scanning direction inclination unevenness (movement amount Λ / 4 in the X direction in FIG. 9) is set to 4mm, and the boundary of the driving amount in the scanning direction is limited to 1.7mm. Scanning width = 8 · 4./1.5+ 10.8 · 2 + 17.5 · 2 + 12 (limit) = 90 (mm) (10) Non-scanning width = 25 · 4/1 · 5 + 17.5 + 4 ( Tilt correction amount) + 12 (limit) = 100 (mm) (11) Driving stroke in the scanning direction = ± (17.5+ 10.8+ 1.7 (limit)) = ± 30 (mm) (the difference between soil and unevenness) ( 12) Line, that is, in the above-mentioned embodiment, for example, the illumination measurement unit 42 in FIG. 1 is used to regularly measure the illumination unevenness in the non-scanning direction. If the measurement result is not corrected, the illumination unevenness correction plates 23A and 23B are driven. And the rough illumination can not help but make up for the correction plate 24. For other actions, for example, in a projection exposure device of the same type, measure the relationship between the operating time measured by the timer and the amount of variation in illuminance unevenness, and store the relationship in the form of a graph in this example. The memory section of the main control system 22 of the projection exposure device may be used. In this case, use this chart to predict the state of uneven illumination according to the operating time. In order to correct this predicted uneven illumination, the uneven illumination correction board 23A, 23B and rough uneven illumination correction board can be omitted by driving the uneven illumination correction board. The measurement operation using the illuminance distribution of the illuminance measurement section 42 is used to increase the productivity of the exposure step.

其次，針對上述之實施形態之照度不均補正板23A、 23B之種種變形例說明。第10圖，係表示將第^變形例之 照度不均補正板23C、23D使對應於第8A之照度不均補正 板23A、23B，在此第10圖，於第1照度不均補正板23C 48 ^紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） 544755 A7 ____B7 ___ 五、發明說明（fj) ，2組之凸之照度不均補正用之遮光線群28A及2組之凹 之照度不均補正用之遮光線群29A被並列構成，於第2照 度不均補正板23D，2組之遮光線群28B及2組之遮光線 群29B被並列構成。亦即，在照度不均補正板23C、23D 對第8圖之照度不均補正板23A、23B以倍數之面積構成 遮光線群。在此場合，以一枚照度不均補正板23C (或 23D)之遮光線群28A、29A (或28B、29B)，能覆蓋固 定遮簾17之開口 17a之圖像（照明領域35)之全域。 在此變形例，如第10圖所示，例如爲了照度不均補正 板23C之遮光線群28A和照度不均補正板23D之遮光線群 28B在開口 17a之圖像中於掃描方向被交互配列，而驅動 照度不均補正板23C、23D。此結果，比第8圖之場合遮 光面積能成2倍，能將凸及凹之照度不均加上傾斜不均以 第8圖之例之2倍寬範圍補正。但是，爲使在第1〇圖之實 施形態照度不均補正板23C、23D之掃描方向之驅動量約 成兩倍，在投影曝光裝置之小型化要作爲優先之場合，若 使用第8圖之例亦可。 進而，將第10圖擴大遮光線群28A、29A之面積，代 之以藉由一邊慢慢地縮小遮光線群28A、29A中之遮光線 26、27之間隔，或一邊慢慢地脹大遮光線群26、27之最 大線寬，放大照度不均之補正範圍亦可。 又，本例之遮光線26、27雖爲相對於非掃描方向之 位置以2次函數等之形狀線寬變化之形狀，但爲相對於位 置以3次以上之函數或指數函數等之形狀線寬變化之形狀 49 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) &quot; &quot; --- (請先閱讀背面之注意事項再填寫本頁) i]. -線. 544755 A7 ______B7___ 五、發明說明 (#) 亦可。再者，如第15A圖、第15B圖所示，使用照度量測 咅13 42爲了以實際補正量測之照度分布E (X)之分散’因 而決定遮光線26、27之形狀亦可。又’在本例之投影曝光 裝置之作動途中，以能交換照度不均補正板23A、23B和 女口此實測之照度不均之特別遮光線構成之照度不均補正板 而構成亦可。藉此，對於不能預測之不規則照度不均之產 生亦能對應。 特別此手法，在由標線片圖案之非掃描方向之透射率 之不同所產生之短期的照度不均變動之補正有效果’實際 運用時，在各投影光學系統對應於特有之變動特性’交換 或切換使用該照度不均補正板亦可。進而’將交換照度不 均補正板23A、23B代之以設置具有爲控制累計曝光量分 布非掃描方向之寬度以不同特性依序變化之開口之固定遮 簾（具有變形開口之固定遮簾），以這些固定遮簾交換固 定遮簾17亦可。或者，藉由在標線片面之共軛面或從該面 散焦之面相當於具有該變形之開口之固定遮簾之專用之不 均一補正板之插脫或交換，補正不規則之照度不均亦可。 又，此回主要將非掃描方向之照度不均之補正作爲目 的，爲了藉由在非掃描方向繞射光和散射光不發生之遮光 ^泉構成遮光線群28A、29A，在進行靜止曝光之場合，對 掃描方向照度不均有殘留之疑慮。因而，在將上述實施形 態之照度不均之補正方法適用於靜止曝光型（整批曝光型 )之投影曝光裝置（步進器等）之場合，將照度不均補正 :板23A、23B代之以使用多數之遮光性之點圖案於X方向 50 (請先閱讀背面之注意事項再填寫本頁) -# 丨線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ___B7____ 五、發明說明（4) (請先閱讀背面之注意事項再填寫本頁) 和3 Y方向以獨立之密度分布構成之照度不均補正板，爲了 在曝光領域之全面互相抵銷照度不均，因而控制該多數之 遮光點圖案之密度分布亦可。但是，因爲由點圖案之大小 和]間隔等在2方向有發生斑點之疑慮，抑制斑點之設計是 必要的。如此多數之遮光性之點圖案於X方向和γ方向以 獨立之密度分布構成之照度不均補正板，不必說亦能適用 於掃描曝光型之曝光裝置。 線 第11A圖表示第2變形例之照度不均補正板，在此第 11A圖，在未圖示之2個透過性之基板，於非掃描方向（ X方向）線寬依序變化之凹之照度不均補正用之遮光線 64A和64B被描繪，遮光線64A、64B (未圖示之基板） 對標線片上之照明領域35於X方向能獨立連續驅動般被 構成。在本變形例，爲了補正非掃描方向之凹之照度不均 ，對應於照度不均之程度變高如第11B圖、第11B圖所示 ，依序移動遮光線64A和64B於X方向之內側。如此對照 明領域35藉由將兩個遮光線64A、64B中心非對稱配置， 凹之照度不均加上遠心偏離能連續補正。 再者，如第11D圖所示將凸之照度不均補正用之遮光 線65於X方向移動自在配置，藉由將遮光線65與上述之 凹之照度不均補正用之遮光線64A、64B組合能補正種種 之特性之照度不均和遠心偏離。第12圖表示第3之變形例 / 之遮光線，第12A圖係被使用於第8圖之實施之形態之遮 光線26，第12B圖因與該遮光線26具有實質上相同遮光 特性，係將由微少哆數之遮光膜構成之同一之點圖案對於 51 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） &quot; &quot; 544755 A7 ____B7 _ 五、發明說明（jA) (請先閱讀背面之注意事項再填寫本頁) 非掃描方向以例如2次函數變化密度分布描畫之遮光圖案 66。此遮光圖案66能代替遮光線26使用。藉此，能更減 低靜止曝光時之照度不均。 又，遮光圖案66，係爲了在標線片上之照明領域內不 產生由斑點圖案所造成之照度不均，而將鄰接之各點圖案 之間隔儘可能以隨取形式設定。又，控制同一之多數點圖 案之密度分布，代之以將大小和形狀之不同之多數點圖案 以大致相同數目之密度配置亦可，將濃度（透射率）不同 之多數點圖案以大致相同數目之密度配置亦可。爲了轉換 濃度（透射率），因而轉換例如作爲遮光膜之鉻膜之厚度 亦可。 ' —線 其次，針對本發明之實施形態之其它例參照第13圖和 第14圖說明。在上述之實施形態，爲了滿足對晶圓上之各 點以整數脈衝曝光之所謂之第（1)式之條件，第2圖之固 定遮簾Π之開口 17a之形狀掃描方向之寬度係一定之矩形 領域。對此在本例之固定遮簾17，如第13A圖所示，爲了 互相抵銷預先計側非掃描方向之照度不均，因此形成掃描 方向SD之寬度變化之開口 17b。 第13B圖之梯形狀之斜線67，係表示在往第13A圖 之開口 17b之晶圓上之投影像之曝光領域之非掃描方向之 某位置X之掃描方向（Y方向）之照度分布F (Y) ’在 此第13B圖，在本例對最大之照度F1構成照度F1/2之 位置之掃描方向之寬度（狹縫寬度）D (X)係在位置X之 曝光領域之寬度。在固定遮簾17之開口以點線表示之矩形 52 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 ---------Β7 __ 五、發明說明（yl) (請先閱讀背面之注意事項再填寫本頁) 之開口 17a之場合，狹縫寬度不是隨著位置X之位置變化 而保持一定，但本例之狹縫寬度D (X)隨著位置X而變 化。在此條件下，爲了在晶圓上之各點以第（1)式之整數 脈衝實質上滿足曝光條件，在本例第13B圖之梯形狀之照 度分布F (Y〕之傾斜部之掃描方向之寬度DE不依位置X 變化而係實質上固定爲目的。因而，對該寬度DE課之以 所謂以整數脈衝曝光之條件。亦即，在晶圓W上各點於掃 插方向僅寬度D移動期間，對該各點以共通之整數進行。 第14圖，表示本例之掃描曝光時之脈衝發光之時序之 一例和比較例，首先第14A圖之斜線67A如第2圖之實施 形態，狹縫寬度係於非掃描方向一定之場合之曝光領域之 掃描方向之照度分布，在第14A圖之照度分布進行掃描曝 光之場合，例如晶圓上之既定之1點以大致等間隔每次達 g] Y方向之位置68進行曝光用光之脈衝發光。 -線 對此，第14B圖之斜線67B表示如本例之第13B圖， 狹縫寬度係於非掃描方向變化之場合或在位置X之曝光領 域之掃描方向之照度分布。在以此第14B圖之照度分布進 行掃描曝光之場合，將斜線67B之梯形狀之照度分布之傾 斜部67Ba和67Bb於晶圓上之各點通過期間，分別以整數 脈衝進行曝光。具體上，晶圓上之既定之1點以大致等間 隔每次到達Y方向來進行曝光用光之脈衝發光。藉此，在 梯形狀之照度分布之上升傾斜部67Ba和下降傾斜部67Bb 進行相同脈衝數（在第14B.圖爲5個）曝光，累計曝光量 分布被均一化。 … 53 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 五、發明說明（i：j) (請先閱讀背面之注意事項再填寫本頁) 焦，將粗照度不均補正板24和照度不均補正板23A、23b 之至少一方配置亦可。進而，除此之外，加上或單獨將可 雲力遮簾13和固疋遮簾17之至少~方配置在該中間像面或 從此處僅以既定間隔散焦之面亦可。 又’上述之實施形態雖將本發明適用於掃描曝光方式 之投影曝光裝置，但本發明亦能適用於不用投影系統之接 近方式等之曝光裝置亦能適用。又，曝光用光（曝光光束 )不僅限於上述之紫外光，例如使用雷射電漿光源或從 SOR (同步加速器軌道輻射）光圈產生之軟X射線領域（ 波長5〜50nm)之EUV光亦可。在EUV曝光裝置，照明 光學系統和投影光學系統僅分別由複數之反射光學元件構 成，前述之粗照度不均補正板和照度不均補正板等亦成反 身寸型。 —線. 又’從第1圖之晶圓W能製造半導體元件。該半導體 元:件藉由進行元件之機能性能設計之步驟、根據此步驟製 造標線片之步驟、從矽材料製作晶圓之步驟、藉由前述之 實施形態之投影曝光裝置將標線片之圖案曝光在晶圓之步 驟、元件組裝步驟（包含切割步驟、打線步驟和封裝步驟 )、檢查步驟等來製造。 又’曝光裝置之用途不限定於半導體元件製造用之曝 光:裝置，例如’爲製造形成在角型玻璃板之液晶表示元件 ’或電漿顯示器等之顯示裝置用之曝光裝置和攝影元件（ CCD等）、微機械或薄膜磁頭等之各種元件之曝光裝置亦 會巨廣泛應用。再者，本發明使用微影步驟製造形成有各種 55 本紙張尺度適用中國國家標準（CNS)A4規格（2ΐ〇Τ^Τ^^-- 544755 A7 _B7__ 五、發明說明（β) 量之分布之場合，能滿足所謂在該基板上之各點進行實質 上整數脈衝量之曝光之條件，提升累計曝光量分布之均一 性。 【符號說明】 (請先閱讀背面之注意事項再填寫本頁) # tTJ·- 線· 1 曝光光源 5 光束成形系統 6 第1複眼透鏡 9 第2複眼透鏡 10 開口光圏板 13 可動遮簾 17 固定遮簾 R 標線片 PL 投影光學系統 W 晶圓 19 積分感測器 20 驅動機構 21 曝光控制單元 22 主控制系統 23A、23B 照度不均補正板 24 粗照度不均補正板 26 凸之遮光線 27 凹之遮光線 28A、28B 凸之照度不均補正用遮光線群 29A ^ 29B 凹之照度不均補正用遮光線群 57 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544755 A7 _ B7 五、發明說明 31 標線片台 39 晶圓台 42 照度量測部 46 空間像量測系統 (請先閱讀背面之注意事項再填寫本頁) 58 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Next, various modifications of the illuminance unevenness correction plates 23A and 23B of the above-mentioned embodiment will be described. FIG. 10 shows the illuminance unevenness correction plates 23C and 23D according to the ^ th modification so that the illuminance unevenness correction plates 23A and 23B correspond to the 8A. Here, FIG. 10 shows the first illuminance unevenness correction plate 23C. 48 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 ____B7 ___ V. Description of the invention (fj), the shading line group 28A and 2 sets for the correction of uneven illumination unevenness of 2 groups The light-shielding line group 29A for the correction of the uneven illuminance unevenness is juxtaposed, and in the second illuminance unevenness correction plate 23D, the two groups of light-shielding line groups 28B and the two groups of light-shielding line groups 29B are juxtaposed. That is, the illuminance unevenness correction plates 23C, 23D and the illuminance unevenness correction plates 23A, 23B of FIG. 8 constitute a shading line group in a multiple area. In this case, a shading line group 28A, 29A (or 28B, 29B) of an uneven illumination compensation plate 23C (or 23D) can cover the entire area of the image (lighting area 35) of the opening 17a of the fixed curtain 17 . In this modification, as shown in FIG. 10, for example, the shading line group 28A of the unevenness correction plate 23C and the shading line group 28B of the unevenness correction plate 23D are arranged alternately in the scanning direction in the image of the opening 17a. While driving the illumination unevenness correction plates 23C and 23D. As a result, the light-shielding area can be doubled as compared with the case shown in FIG. 8, and the uneven unevenness of the convex and concave can be added to the uneven unevenness to compensate for the wide range twice as in the example of FIG. However, in order to make the driving amount in the scanning direction of the illuminance unevenness correction plates 23C and 23D in the embodiment shown in FIG. 10 approximately double, the miniaturization of the projection exposure device should be given priority. Examples are also available. Furthermore, in FIG. 10, the area of the light-shielding line groups 28A and 29A is enlarged, and the interval between the light-shielding lines 26 and 27 in the light-shielding line groups 28A and 29A is gradually reduced, or the light-shielding is gradually expanded while The maximum line width of the line groups 26 and 27 can also enlarge the correction range of uneven illumination. In addition, although the shading lines 26 and 27 in this example are shapes that change the line width by a second-order function or the like relative to the position in the non-scanning direction, they are shape lines that are a function or an exponential function that is three or more times relative to the position. Wide change shape 49 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) &quot; &quot; --- (Please read the precautions on the back before filling this page) i). -Line. 544755 A7 ______B7___ V. Description of Invention (#) is also available. Furthermore, as shown in Figs. 15A and 15B, the shape of the light-shielding lines 26 and 27 may be determined by using the illuminance measurement 咅 13 42 to disperse the illuminance distribution E (X) measured with actual correction. In addition, in the operation of the projection exposure device of this example, it may be constituted by an illumination unevenness correction plate composed of a special shading line that can exchange the illumination unevenness correction plates 23A, 23B and the actually measured illumination unevenness. In this way, it can also respond to the occurrence of irregular illumination unevenness that cannot be predicted. In particular, this method has the effect of correcting the short-term illuminance unevenness change caused by the difference in the transmissivity of the non-scanning direction of the reticle pattern. In actual use, each projection optical system corresponds to the unique fluctuation characteristics. Or switch to use this uneven illumination correction board. Further, 'exchanging the illuminance unevenness correction plates 23A and 23B with fixed openings (fixed openings with deformed openings) having openings that sequentially change in different characteristics to control the cumulative non-scanning direction width in the non-scanning direction, These fixed blinds may be replaced with the fixed blind 17. Or, by inserting or exchanging the special uneven correction plate on the conjugate surface of the reticle or the surface defocused from the surface, which is equivalent to the fixed blind with the deformed opening, the irregular illumination is not corrected. Both are fine. This time, the purpose is to correct the uneven illumination in the non-scanning direction as the purpose. In order to form a light-shielding line group 28A and 29A by a light-shielding light source where diffraction light and scattered light do not occur in the non-scanning direction, in the case of static exposure There are no doubts about the residual illumination in the scanning direction. Therefore, in the case where the correction method for unevenness of illumination in the above embodiment is applied to a projection exposure device (stepper, etc.) of a still exposure type (batch exposure type), the unevenness of illumination is corrected: plates 23A, 23B instead Use most of the light-shielding dot patterns in the X direction 50 (Please read the precautions on the back before filling this page)-# 丨 Line · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 544755 A7 ___B7____ 5. Description of the invention (4) (Please read the precautions on the back before filling out this page) and 3 Y direction irradiance unevenness correction board composed of independent density distributions, in order to offset each other in the exposure field Unevenness, so it is also possible to control the density distribution of the majority of the shading dot patterns. However, because speckles are likely to occur in two directions depending on the size of the dot pattern and the interval, design of suppressing speckles is necessary. It is needless to say that such a light-shielding dot pattern with independent density distribution correction plates composed of independent density distributions in the X direction and the γ direction can also be applied to a scanning exposure type exposure device. Line 11A shows the concave unevenness correction plate of the second modification. Here, in FIG. 11A, the concaves of the two transmissive substrates (not shown) in the non-scanning direction (X direction) are sequentially changed in line width. The light-shielding lines 64A and 64B for illuminance unevenness correction are drawn, and the light-shielding lines 64A and 64B (substrates not shown) can be configured to drive the lighting area 35 on the reticle independently and continuously in the X direction. In this modification, in order to correct unevenness in illuminance in the non-scanning direction, the degree corresponding to the unevenness in illuminance becomes higher. As shown in FIGS. 11B and 11B, the light shielding lines 64A and 64B are sequentially moved inside the X direction. . In this way, by arranging the two light-shielding lines 64A and 64B asymmetrically in the center of the bright field 35, the uneven illuminance and the telecentric deviation can be continuously corrected. Furthermore, as shown in FIG. 11D, the light shielding lines 65 for correcting uneven illuminance unevenness are freely moved in the X direction, and the light shielding lines 64A and 64B for correcting concave illuminance unevenness correction are arranged in the X direction. The combination can correct uneven illumination and telecentric deviation of various characteristics. FIG. 12 shows a third modification example of the light-shielding line. FIG. 12A is a light-shielding line 26 used in the embodiment of FIG. 8, and FIG. 12B has substantially the same light-shielding characteristics as the light-shielding line 26. The same dot pattern composed of a small number of light-shielding films is applicable to the Chinese paper standard (CNS) A4 (210 x 297 mm) for 51 paper sizes. &Quot; &quot; 544755 A7 ____B7 _ V. Description of the Invention (jA) ( (Please read the precautions on the back before filling in this page.) The light-shielding pattern 66 is drawn in a non-scanning direction with, for example, a quadratic function change density distribution. This light-shielding pattern 66 can be used instead of the light-shielding line 26. This makes it possible to further reduce uneven illumination during still exposure. In addition, the light-shielding pattern 66 is set so that the interval between adjacent dot patterns is as random as possible so as not to cause uneven illumination due to a spot pattern in the illumination area on the reticle. In addition, it is also possible to control the density distribution of the same majority dot pattern, and to arrange the majority dot patterns having different sizes and shapes at approximately the same number of densities, and to dispose the majority dot patterns having different concentrations (transmittances) at approximately the same number. The density configuration is also available. In order to switch the density (transmittance), it is also possible to switch the thickness of a chromium film, for example, as a light-shielding film. '-Line Next, another example of the embodiment of the present invention will be described with reference to Figs. 13 and 14. In the above-mentioned embodiment, in order to satisfy the condition of the so-called formula (1) in which each point on the wafer is exposed with an integer pulse, the width of the shape in the scanning direction of the opening 17a of the fixed curtain Π in FIG. 2 is constant. Rectangle sphere. In this regard, as shown in FIG. 13A, the fixed curtain 17 in this example has an opening 17b having a width change in the scanning direction SD in order to offset the uneven illumination in the non-scanning direction of the pre-calculation side. The oblique line 67 of the ladder shape in FIG. 13B indicates the illuminance distribution F in the scanning direction (Y direction) in a position X other than the scanning direction of the exposure area of the projected image on the wafer 17b in FIG. 13A. Y) 'In FIG. 13B, in this example, the width (slit width) D (X) in the scanning direction of the position where the maximum illuminance F1 constitutes the illuminance F1 / 2 is the width of the exposure area at position X. Rectangular 52 indicated by dotted lines at the opening of the fixed curtain 17 The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 544755 A7 --------- B7 __ V. Description of the invention (Yl) (Please read the precautions on the back before filling this page) In the case of opening 17a, the slit width does not remain constant as the position X changes, but the slit width D (X) in this example varies with The position X changes. Under this condition, in order to substantially satisfy the exposure conditions with integer pulses of the formula (1) at each point on the wafer, the scanning direction of the inclined portion of the illuminance distribution F (Y) in the ladder shape of FIG. 13B in this example. The width DE does not substantially change depending on the position X. Therefore, the width DE is subject to a condition called exposure with an integer pulse. That is, each point on the wafer W moves only the width D in the scanning direction. During this period, the points are performed with a common integer. Fig. 14 shows an example and comparative example of the timing of pulse light emission during the scanning exposure of this example. First, the oblique line 67A in Fig. 14A is as shown in Fig. 2 and has a narrow shape. The slit width is the illuminance distribution in the scanning direction of the exposure area when the non-scanning direction is constant. When scanning exposure is performed in the illuminance distribution in FIG. 14A, for example, a predetermined point on the wafer reaches g at approximately regular intervals. ] The position 68 in the Y direction emits pulses of light for exposure.-For this, the diagonal line 67B in Fig. 14B indicates that, as in Fig. 13B in this example, the slit width is in the case of non-scanning direction change or at position X. Scanning the exposure field Illuminance distribution in the direction. When scanning exposure is performed with the illuminance distribution in FIG. 14B, the inclined portions 67Ba and 67Bb of the ladder-like illuminance distribution of the oblique line 67B pass through the points on the wafer in integer pulses. Exposure. Specifically, a predetermined point on the wafer reaches the Y direction every time at approximately equal intervals to emit pulses of light for exposure. Thereby, the ascending slope portion 67Ba and the descending slope portion 67Bb of the ladder-shaped illumination distribution Exposure with the same number of pulses (five in the 14B.), And the cumulative exposure distribution is uniformized.… 53 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 544755 A7 V. Invention Explanation (i: j) (Please read the precautions on the back before filling this page.) Focus, and arrange at least one of the unevenness correction plate 24 and the unevenness correction plates 23A and 23b. Furthermore, in addition to this In addition, at least one of the cloud-capable blinds 13 and the solid-shaped blinds 17 may be arranged on the intermediate image plane or a surface that is defocused only at a predetermined interval from here. Apply the present invention The projection exposure device is a scanning exposure method, but the present invention can also be applied to an exposure device that does not use a projection method, etc. Also, the exposure light (exposure beam) is not limited to the above-mentioned ultraviolet light, such as the use of laser light. Plasma light sources or EUV light in the soft X-ray field (wavelength 5 ~ 50nm) generated from SOR (Synchrotron Orbital Radiation) apertures are also available. In EUV exposure devices, the illumination optical system and the projection optical system are only composed of a plurality of reflective optical elements, respectively. Structure, the aforementioned rough illuminance unevenness correction plate, illuminance unevenness correction plate, etc. are also reflexive. —Line. Also, the semiconductor element can be manufactured from the wafer W in FIG. 1. This semiconductor element: element by performing the element Functional performance design step, step of manufacturing reticle according to this step, step of making wafer from silicon material, step of exposing pattern of reticle on wafer by projection exposure device of the aforementioned embodiment, step of component Assembly steps (including cutting steps, wire bonding steps, and packaging steps), inspection steps, and so on. Also, the use of the exposure device is not limited to exposure for semiconductor device manufacturing: devices such as' exposure devices and imaging devices (CCD's) for display devices such as' for manufacturing liquid crystal display elements formed on angular glass plates' or plasma displays Etc.), micro-mechanical or thin-film magnetic head exposure devices will also be widely used. In addition, the present invention uses lithographic steps to produce a variety of 55 paper sizes that are applicable to Chinese National Standard (CNS) A4 specifications (2ΐ〇Τ ^ Τ ^^-544755 A7 _B7__ V. Description of the distribution of the amount of (β) Occasionally, it can meet the conditions of so-called substantially integer pulse exposure at each point on the substrate, and improve the uniformity of the cumulative exposure distribution. [Symbol Description] (Please read the precautions on the back before filling this page) # tTJ ·-line · 1 exposure light source 5 beam shaping system 6 1st fly-eye lens 9 2nd fly-eye lens 10 aperture beam plate 13 movable shade 17 fixed shade R reticle PL projection optical system W wafer 19 integral sensing Device 20 Driving mechanism 21 Exposure control unit 22 Main control system 23A, 23B Illumination unevenness correction plate 24 Roughness unevenness correction plate 26 Convex light-shielding line 27 Concave light-shielding line 28A, 28B Convex light-unevenness compensation light-shielding group 29A ^ 29B Concave illuminance unevenness correction shading thread group 57 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 544755 A7 _ B7 V. Description of the invention 31 Substrate stage 39 as the wafer 42 measuring portion 46 measures an aerial image measurement system (Read Notes on the back and then fill the page) suitable scale sheet 58 China National Standard (CNS) A4 size (210 X 297 mm)

Claims (1)

544755 0988¾ ABCD 六、申請專利範圍 透射率分布控制構件(對前述基板之非掃描方向具有可變之 透射率分布)來部分遮光前述曝光光束。 (請先閲讀背面之注意事項再塡寫本頁) 7. 如申請專利範圍第6項之曝光方法，前述透射率分 布控制構件具有至少1條之遮光線，或對前述非掃描方向 進行密度或大小變化之微細點圖案之集合體。 8. 如申請專利範圍第6項之曝光方法，其中，前述透 射率分布控制構件具備：第1組複數遮光線，沿著前述基 板之非掃描方向以既定之分布來變化遮光面積；及第2組 複數遮光線，與前述第1組遮光線實質上係同一形狀； 藉由對前述曝光光束之光程，沿著前述基板之掃描方 向實質上對稱插入前述第1組遮光線和前述第2組遮光線 ，來控制對曝光光束之沿前述非掃描方向之透射率分布。 9. 如申請專利範圍第8項之曝光方法，進一部藉由分 別沿著前述基板之非掃描方向移動前述第1組和第2組複 數遮光線，來控制曝光光束之沿前述非掃描方向之透射率 分布。 10. 如申請專利範圍第8項之曝光方法，其中，前述第 1組複數遮光線係以沿著前述基板之掃描方向依序變化之 間距來配列。 11. 如申請專利範圍第8項之曝光方法，其中，前述曝 光光束係脈衝光；在相對於前述曝光光束之脈衝發光之各 周期間前述基板所移動之間隔換算成在前述第1組複數遮 光線之位置間隔之長度，前述第1組複數遮光線間之間距 係分別不同。 2 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) &quot;&quot; 544544755 0988¾ ABCD VI. Patent application scope The transmittance distribution control member (which has a variable transmittance distribution for the non-scanning direction of the aforementioned substrate) partially shields the aforementioned exposure beam. (Please read the precautions on the reverse side before writing this page) 7. If the exposure method of the patent application item 6 is used, the transmittance distribution control member has at least one light-shielding line, or the density of the non-scanning direction or A collection of fine dot patterns with varying sizes. 8. The exposure method according to item 6 of the patent application scope, wherein the transmittance distribution control member includes: a first group of plural light-shielding lines that change the light-shielding area with a predetermined distribution along the non-scanning direction of the substrate; and the second The plurality of light-shielding lines are substantially the same shape as the light-shielding lines of the first group; the first light-shielding lines and the second group are substantially symmetrically inserted along the scanning direction of the substrate by the optical path of the exposure beam. The light-shielding line controls the transmittance distribution of the exposure beam along the aforementioned non-scanning direction. 9. For the exposure method of the eighth item of the patent application, further move the first group and the second group of multiple shading lines along the non-scanning direction of the substrate to control the exposure beam along the non-scanning direction. Transmittance distribution. 10. The exposure method according to item 8 of the scope of patent application, wherein the first plurality of light-shielding lines are arranged at a pitch that sequentially changes along the scanning direction of the substrate. 11. The exposure method according to item 8 of the scope of patent application, wherein the aforementioned exposure beam is pulsed light; the interval during which the substrate is moved during each cycle of the pulsed emission relative to the aforementioned exposure beam is converted into a plurality of shades in the first group The length of the space between the lines is different from the distance between the first plurality of light-shielding lines. 2 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) &quot; &quot; 544 六、申請專利範圍 12. 如申請專利範圍第8項之曝光方法，其中，前述透 射率分布控制構件係進一步具備第3組複數遮光線’較即 述第1組及第2組複數遮光線沿著前述基板之非掃描方向 具有更大遮光面積變化量； 爲了大致補正對前述曝光光束之前述非掃描方向之照 度不均，將前述第3組複數遮光線對前述曝光光束之光程 著前述基板之掃描方向和非掃描方向之至少一方插入。 13. 如申請專利範圍第1項之曝光方法，其係對應於藉 由前述曝光光束來變更前述光罩之照明條件，來調整則述 透射率分布。 14. 一種曝光方法，係藉由曝光光束照明光罩後，以透 過光罩後之曝光光束掃描基板來曝光基板者，其係包含： 量測前述基板或在其附近之曝光光束之照度不均； 在至前述基板之前述曝光光束之光程上，控制沿與前 述基板之掃描方向交叉之非掃描方向之前述曝光光束之照 度分布，來補正該量測所得之照度不均；以及 相對於曝光光束而同步移動前述光罩和基板，以前述 照度不均被補正後之曝光光束來掃描前述基板。 15·如申請專利範圍第14項之曝光方法，其中，前述 曝光光束係脈衝狀之光束；在對前述光罩之圖案面或此面 之共軛面分別僅以既定間隔散焦之領域，以沿前述基板之 非掃描方向具有既定之透射率分布之板插入曝光光束之通 道來控制照度分布。 16·如申請專利範圍第15項之曝光方法，其中，在該 3 一本紙張又度適用中國國家標準(CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝 544755 05882s ABCD 六、申請專利範圍 板，延伸於非掃描方向且沿著非掃描方向形成具有不同遮 光面積之遮光圖案，藉由使該板在曝光光束之通道中移位 來控制照度分布。 17_如申請專利範圍第16項之曝光方法，其係進一步 包含預先求得照度不均和藉由前述板之移動量而得之照度 不均補正量之關係。 18·如申請專利範圍第16項之曝光方法，其係在照度 不均相對於曝光光束沿非掃描方向係非對稱之場合，藉由 使前述板在曝光光束之通道內朝非掃描方向移位來補正傾 斜不均。 19·如申請專利範圍第16項之曝光方法，其係進一步 包含求得遠心偏離，藉由在曝光光束之通道內使前述板移 位來補正前述遠心偏離。 20. 如申請專利範圍第19項之曝光方法，其中，包含 該板係具有：同一之遮光圖案且使該等遮光圖案形成反向 而互相對向配置之第1和第2補正板，藉由在曝光光束之 通道內僅以互相不同量移位第1和第2補正板來補正遠心 偏離。 21. 如申請專利範圍第16項之曝光方法，其中，該板 係配置在形成於該板之圖案像在光罩之圖案面之共軛面上 被散焦之位置，前述散焦量5Z對在前述板上之曝光用光 之數値孔徑NA和遮光圖案之掃描方向之最大線寬滿足占z 〉FD/ ( 2 · ΝΑ) 〇 22. —種曝光裝置，係以曝光光束照明光罩，同步掃描 4 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再塡寫本頁) 一裝 訂-· 544755 A8 g D8 六、申請專利範圍 前述光罩和基板後，透過前述光罩之圖案來曝光前述基板 者，其係包含： 曝光光源，用以產生前述曝光光束； 透射率分布控制構件，配置在對前述光罩之圖案面或 此面之共軛面分別僅以既定間隔散焦之領域，沿與前述基 板之掃描方向交叉之非掃描方向以可變之透射率分布部分 來遮光前述曝光光束；以及 驅動裝置，爲控制前述曝光光束之沿非掃描方向之透 射率分布，而驅動前述透射率分布控制構件。 23. 如申請專利範圍第22項之曝光裝置，其中，前述 曝先光源係脈衝光源； 具備固定之視野光圏，配置在分別相對於前述光罩之 圖案面或此面之共軛面僅以比前述透射率分布控制構件之 散焦量更少量散焦之面； 對應於該視野光圏之前述基板之掃描方向之方向之寬 度，係在前述基板上之曝光對像之點通過前述視野光圈之 像期間，以前述曝光光束實質上係整數脈衝對前述曝光對 象之點照射而決定。 24. 如申請專利範圍第22項之曝光裝置，其中，進一 歩在前述曝光光源和前述透射率分布控制構件之間至少具 備一光學積分器。 25. 如申請專利範圍第22項之曝光裝置，其中，前述 透射率分布控制構件，係具有沿著前述基板之非掃描方向 依序變化遮光面積之至少一條遮光線，或沿前述非掃描方 5 本紙張又1適用中國國家標準（CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝 訂： 028825 ABCD 544755 六、申請專利範圍 向進行密度或大小變化之微細點圖案之集合體。 26. 如申請專利軺圍弟22之曝光裝置，其中，前述透 射率分布控制構件具備：第1組複數遮光線，沿著前述基 板之非掃描方向依序變化遮光面積；及第2組複數遮光線 ，與前述第1組遮光線實質上係同一形狀； 前述驅動裝置藉由對前述曝光光束之光程沿著前述基 板之掃描方向實質上對稱插入前述第1組遮光線和前述第 2組遮光線，來變更曝光光束之透射率沿前述非掃描方向 之分布。 27. 如申請專利範圍第26項之曝光裝置，其中，前述 驅動裝置係藉由相對於前述曝光光束之光程，沿著前述基 板之非掃描方向一體或互相獨立地移動前述第1組和第2 組遮光線，來變更曝光光束之透射率沿前述非掃描方向之 分布。 28. 如申請專利範圍第22項之曝光裝置，其中，前述 驅動裝置爲進一步補正對前述曝光光束之前述光罩或前述 基板之遠心偏離，而沿掃描方向驅動前述透射率分布控制 構件。 29. 如申請專利範圍第27項之曝光裝置，其中，前述 透射率分布控制構件進一步具備第3組複數遮光線，較前 述第1組和第2組複數遮光線沿著前述基板之非掃描方向 之具有更大之遮光面積變化量。 30. 如申請專利範圍第26項之曝光裝置’其中，前述 驅動裝置係可將前述第1組及第2組遮光線分別沿前述掃 6 L本紙張用中國國家標準（CNS)A4規格(210 x 297公^ (請先閲讀背面之注意事項再塡寫本頁)6. Application for patent scope 12. For the exposure method according to item 8 of the patent application scope, wherein the transmittance distribution control member further includes a third group of multiple light-shielding lines, namely, the first group and the second group of multiple light-shielding lines. The non-scanning direction facing the substrate has a larger amount of change in light-shielding area; in order to substantially correct the uneven illumination in the non-scanning direction with respect to the exposure beam, the third group of multiple light-shielding lines is directed to the light path of the exposure beam Insert in at least one of the scanning direction and the non-scanning direction. 13. If the exposure method of item 1 of the patent application scope is based on changing the illumination conditions of the aforementioned photomask by the aforementioned exposure beam, the transmittance distribution is adjusted. 14. An exposure method, in which the substrate is exposed by illuminating the mask with an exposure beam and scanning the substrate with the exposure beam after passing through the mask, which comprises: measuring the unevenness of the illumination of the substrate or the exposure beam near it ; Controlling the illuminance distribution of the exposure light beam in a non-scanning direction that intersects with the scanning direction of the substrate on the optical path of the exposure light beam to the substrate to correct the uneven illuminance obtained from the measurement; and relative to the exposure The light beam simultaneously moves the photomask and the substrate, and scans the substrate with an exposure light beam after the unevenness of illumination is corrected. 15. The exposure method according to item 14 of the scope of patent application, wherein the aforementioned exposure beam is a pulsed beam; in areas where the pattern surface of the aforementioned mask or the conjugate surface of this surface is defocused only at a predetermined interval, respectively, A plate having a predetermined transmittance distribution along the non-scanning direction of the aforementioned substrate is inserted into the channel of the exposure beam to control the illumination distribution. 16. If you apply the exposure method of item 15 in the scope of patent application, in which the three papers are again applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling in this (Page) 544755 05882s ABCD VI. Patent application board, extending in the non-scanning direction and forming light-shielding patterns with different light-shielding areas along the non-scanning direction, and controlling the illumination distribution by shifting the board in the channel of the exposure beam . 17_ The exposure method according to item 16 of the scope of patent application, which further includes the relationship between obtaining the illumination unevenness in advance and the illumination unevenness correction amount obtained by the movement amount of the aforementioned board. 18. The exposure method according to item 16 of the patent application scope, in the case where the illumination unevenness is asymmetric with respect to the exposure beam in the non-scanning direction, the aforementioned plate is shifted in the non-scanning direction in the channel of the exposure beam To correct uneven tilt. 19. The exposure method according to item 16 of the patent application scope, further comprising obtaining a telecentric deviation, and correcting the telecentric deviation by shifting the aforementioned plate in the channel of the exposure beam. 20. The exposure method according to item 19 of the patent application scope, which includes the first and second correction plates having the same light-shielding pattern and inverting the light-shielding patterns and facing each other. In the channel of the exposure beam, only the first and second correction plates are shifted by different amounts from each other to correct the telecentric deviation. 21. The exposure method according to item 16 of the patent application range, wherein the plate is arranged at a position where the pattern image formed on the plate is defocused on the conjugate surface of the pattern surface of the photomask, and the aforementioned defocus amount is 5Z to The number of exposure light on the aforementioned plate, the aperture NA, and the maximum line width in the scanning direction of the shading pattern satisfy z> FD / (2 · ΝΑ) 〇 22. An exposure device that illuminates the mask with an exposure beam, Simultaneous scanning 4 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before writing this page) One binding-· 544755 A8 g D8 Those who expose the substrate through the pattern of the mask after the mask and the substrate include: an exposure light source for generating the exposure light beam; a transmittance distribution control member disposed on the pattern surface of the mask or the surface thereof The conjugate surfaces are respectively defocused only at predetermined intervals, blocking the exposure light beam with a variable transmittance distribution portion in a non-scanning direction crossing the scanning direction of the substrate; and a driving device, In order to control the transmittance distribution in the non-scanning direction of the exposure light beam, the transmittance distribution control member is driven. 23. For example, the exposure device according to item 22 of the application, wherein the aforementioned exposure light source is a pulse light source; it has a fixed field of vision light beam, and is arranged on the pattern surface of the photomask or the conjugate surface of the surface only with A defocused surface that is smaller than the defocus amount of the aforementioned transmittance distribution control member; a width corresponding to the scanning direction of the substrate of the field of view, the point of the exposure object on the substrate passing through the field of view aperture The image period is determined by irradiating the point of the exposure target with the exposure light beam being substantially an integer pulse. 24. The exposure device according to item 22 of the application, further comprising at least one optical integrator between the exposure light source and the transmittance distribution control member. 25. The exposure device according to item 22 of the patent application scope, wherein the transmittance distribution control member has at least one light-shielding line that sequentially changes the light-shielding area along the non-scanning direction of the substrate, or along the non-scanning side 5 This paper is also applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling out this page) Binding: 028825 ABCD 544755 6. The scope of patent application is for density or size changes. A collection of fine dot patterns. 26. For example, the exposure device of the patent application No. 22, wherein the transmittance distribution control member includes: a first group of a plurality of light-shielding lines that sequentially change a light-shielding area along the non-scanning direction of the substrate; Line is substantially the same shape as the first group of shading lines; the driving device inserts the first group of shading lines and the second group of shading substantially symmetrically along the scanning direction of the substrate by the optical path of the exposure beam Line to change the distribution of the transmittance of the exposure beam along the aforementioned non-scanning direction. 27. For the exposure device according to item 26 of the application for a patent, wherein the driving device moves the first group and the first group integrally or independently of each other along the non-scanning direction of the substrate with respect to the optical path of the exposure beam. Two sets of shading lines are used to change the distribution of the transmittance of the exposure beam along the aforementioned non-scanning direction. 28. The exposure device according to item 22 of the application, wherein the driving device further corrects a telecentric deviation of the photomask or the substrate with respect to the exposure beam, and drives the transmittance distribution control member in a scanning direction. 29. For the exposure device according to item 27 of the patent application scope, wherein the transmittance distribution control member further includes a third group of multiple light-shielding lines, which is along the non-scanning direction of the substrate than the first group and the second group of multiple light-shielding lines It has a larger amount of change in the shading area. 30. For the exposure device in the scope of application for patent No. 26, wherein the aforementioned driving device can respectively scan the aforementioned first and second groups of shading lines along the aforementioned 6 L of this paper for China National Standard (CNS) A4 specifications (210 x 297 公 ^ (Please read the notes on the back before writing this page) 544755 A8B8C8D8 六、申請專利範圍 (請先閲讀背面之注意事項再塡寫本頁) 描方向與非掃描方向驅動，前述第1組及第2組遮光線係 在前述曝光光束之照度不均的凹凸成分調整時沿前述掃描 方向移動’並且，在前述照度不均的傾斜成分調整時沿前 述非掃描方向移動。 31·—種曝光裝置，係以曝光光束照明光罩，同步掃描 前述光罩和基板後，透過前述光罩之圖案來曝光前述基板 者，其係包含： 量測器’量測在與前述基板之掃描方向交叉之非掃描 方向之前述曝光光束之照度不均； 遮光板，具有遮光圖案以調整沿非掃描方向之曝光光 束之照度分布； 驅動裝置，用以驅動前述遮光板；以及 控制裝置，係控制驅動裝置，使遮光板在曝光光束之 通道內移位，俾補正前述照度不均。 32.如申g靑裝置範圍第31項之曝光裝置，其係進一步 具備曝光光源’以產生少於ΙΟΚΗζ之振盪頻率之脈衝光束 〇 3 3 ·如申g靑專利範圍第31項之曝光裝置，其中，該遮 光板係延伸於非掃描方向且沿著非掃描方向形成具有不同 之遮光面積之遮光圖案。 34. 如申請專利範圍第31項之曝光裝置，其係進一步 具備記憶體，記憶預先求得之照度不均和藉由前述遮光板 之驅動量而得之照度不均補正量之關係。 35. 如申請專利範圍第33項之曝光裝置，其係在照度 7 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公爱 1 &quot; 544755 ABCD 六、申請專利範圍 不均對曝光光束沿非掃描方向係非對稱之場合，驅動裝置 係使遮光板在曝光光束之通道之內往非掃描方向移位。 36. 如申請專利範圍第31項之曝光裝置，其係進一步 具備遠心量測器。 37. 如申請專利範圍第31項之曝光裝置，其中，包含 該遮光板係具有：第1和第2補正板.，具有同一之遮光圖 案且使該等遮光圖案形成反向而互相對向配置；驅動裝置 係藉由在曝光光束之通道內僅以互相不同量移位第1和第 2補ί正板來補正遠心偏離。 38_如申請專利範圍第33項之曝光裝置，其中，該遮 光板係配置在形成於該板之圖案像在光罩之圖案面之共軛 面上被散焦之位置，前述散焦量5Ζ對在前述板上之曝光 用光之數値孔徑ΝΑ和遮光圖案之掃描方向之最大線寬滿 足 5Z&gt;FD/ (2 · ΝΑ) 〇 39. 如申請專利範圍第31項之曝光裝置，其係進一步 具備：計時器、及將預先求得之曝光裝置之作動時間和照 度不均之關係予以記憶之記憶體； 前述控制裝置係對應於以計時器所量測之曝光時間來 控制驅動裝置，俾補正照度不均。 40. 如申請專利範圍第31項之曝光裝置，其中，該遮 光板係具有：第1和第2補正板，具有同一之遮光圖案且 使該等遮光圖案形成反向而互相對向配置；及之第3補正 板，配置在從光罩共軛面較第1及第2板更散焦之位置且 形成有遮光圖案(較第1及第2板之遮光圖案具有更大之遮 8 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐） (請先閱讀背面之注意事項再塡寫本頁) 裝 、一^ 544755 A8 B8 C8 D8 六、申請專利範圍 光面積。 41.如申請專利範圍第39項之曝光裝置，其中，前述 驅動裝置具備：保持且移動第1、第2和第3補正板之滑 f牛 '卡合滑件之導引件、和使滑件移動之馬達。 42· —種曝光方法，係藉由將形成於光罩之圖案轉印於 基板上，來以該圖案曝光基板者，其係包含： 以脈衝狀之曝光光束照明光罩，俾使在前述基板上之 前述曝光光束之照度分布相對於前述基板之掃描方向呈梯 形狀；及 —邊同步移動前述光罩和基板一邊以曝光光束掃描基 板； 前述梯形狀之照度分布之傾斜部之寬度，係設定爲在 前述曝光光束之脈衝發光之1週期之期間前述基板沿掃描 方向所移動距離之實質上之整數倍。 43. 如申請專利範圍第42項之曝光方法，將藉由前述 基板上之前述曝光光束而得之曝光領域之形狀對應於在前 述基板上之累計曝光量分布，相對於與前述基板之掃描方 向交叉之非掃描方向，而將其寬度設定爲依序變化。 44. 一種元件製造方法，其特徵係：包含使用申請專利 範圍第1項之曝光方法轉印元件圖案在工件上之步驟。 45·—種元件製造方法，其特徵係：包含使用申請專利 範圍第I4項之曝光方法轉印元件圖案在工件上之步驟。 46·—種元件製造方法，其特徵係：包含使用申請專利 範圍第42項之曝光方法轉印元件圖案在工件上之步驟。 9 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝 、1ΤΪ 544755 A8 B8 C8 D8 六、申請專利範圍 47·—種曝光裝置，係以曝光光束照明光罩之同時，透 過前述光罩以則述曝光光束曝光基板者，其係具備： 照度補正構件，配置在相對於前述基板之共軛面散焦 之領域，以可變之透射率分布部分遮光前述曝光光束，·以 及 控制裝置’ g^；定前述曝光光束之透射率分布，俾補正 丰目對於前述光罩或前述基板之前述曝光光束之遠心之崩離 量和照度不均之至少一方。 48. —種曝光方法，係相對於脈衝振盪之曝光光束分別 丰目對移動光罩和基板，透過前述光罩以前述曝光光束曝光 前述基板者，其係包含： 將沿前述基板之掃描方向之前述曝光光束之照度分布 設定爲大致呈梯形狀； 使沿前述曝光光束之前述掃描方向之寬度部分不同； 及 設定前述基板之掃描曝光條件，俾在前述基板上之曝 光對象之點通過前述梯形狀之照度分布之傾斜部期間，以 整數個曝光光束照射在前述曝光對象之點。 49. 一種曝光裝置，係以曝光光束照明光罩，並且透過 前述光罩以前述曝光光束曝光基板者，其係具備： 補正構件，係在與前述曝光光束所通過之光學系統的 光軸大致垂直之既定面內，.使對前述曝光光束之第1方向 之透射率分布對應於與前述第1方向交叉之第2方向的位 置而具有不同的特定圖案；及 10 本紙張人度適用中國國家標準(CNS)A4規格(210X 297公釐) (請先閲讀背面之注意事項再塡寫本頁) 裝 &quot;\έ 544755 0^8899 ABCD 六、申請專利範圍 調整裝置，用以調整前述曝光光束與前述特定圖案之 位置關係，俾控制對前述光罩或前述基板之前述曝光光束 的照射特性。 50. 如申請專利範圍第49項之曝光裝置，其係進一步 具備計測裝置，用以檢測前述曝光光束，且計測前述照射 待性； 前述調整裝置，係依據將前述特定圖案設定於不同位 置所得到之前述計測裝置之計測結果，來求得前述補正構 件之驅動量與前述照射特性之變化量的關係，並且，在前 述照射特性之控制時，使用前述求得之關係來調整前述位 置關係。 51. 如申請專利範圍第49項之曝光裝置，其中，前述 調整裝置係在前述照射特性之下一次計測前，以計算求得 前述計測後變動之照射特性，並且，依據前述計算所得之 照身ί特性來調整前述位置關係。 52. 如申請專利範圍第49項之曝光裝置，其中，前述 補正構件，係從前述基板的曝光面、及在前述光學系統內 之與前述曝光面的共軛面之一方起，僅離開既定距離而配 置。 53. 如申請專利範圍第52項之曝光裝置，其中，前述 光學系統係包含照明光學系統，用以將前述曝光光束照射 於述光罩； 前述補正構件，係配置於前述照明光學系統內之光學 積分器與前述基板之間。 11 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再塡寫本頁) ，裝 «I 544755 A8B8C8D8 六、申請專利範圍 54.如申請專利範圍第53項之曝光裝置，其係進一步 ^備變更裝置，用以變更在前述照明光學系統的瞳面上之 前述曝光光束的強度分布，且變更前述光罩的照明條件； 則述5周整裝置，係ί女照則述照明條件的變更來控制前 述照射特性。 55_如申請專利範圍第54項之曝光裝置，其中，前述 變更裝置，係配置於用來射出前述曝光光束之光源與前述 光學積分器之間，並且具有光學單元，該光學單元係包含 在削述照明光學系統內父換配置之複數個繞射光學元件與 變焦光學系統。 56. 如申目靑專利車Β圍弟49〜55項中任一I旨之曝光裝置， 其中，前述調整裝置係控制前述曝光光束之照度分布，俾 使在前述基板上的曝光量分布大致均-。 57. 如申請專利範圍第56項之曝光裝置，其中，前述 特定圖案，係具有在前述光學系統內可獨立移動之複數個 圖案群，並且，前述各圖案群係包含以前述第2方向作爲 長邊方向且沿前述第1方向變化遮光面積之至少1個圖案 ， 前述調整裝置，係在前述照度分布之控制時，移動前 述複數個圖案群之至少1個。 58. 如申請專利範圍第57項之曝光裝置，其中，前述 圖案，係以前述第2方向作爲長邊方向且前述第1方向的 窠度爲局部不同之至少1條的線圖案，或是分別沿前述第 1及第2方向分布、且相對於前述第2方向變化密度或大 12 中國國家標準(CNS)A4規格(210x 297公變) ' (請先閲讀背面之注意事項再填寫本頁) 裝 544755 A8 B8 ___s___ 六、中請專利範圍 之點圖案的集合體。 (請先閲讀背面之注意事項再塡寫本頁) 59·如申請專利範圍第58項之曝光裝置，其中，前述 g周整裝置，係使前述複數個圖案群中一對圖案群沿_述第 1方向移動，且控制前述曝光光束之遠心性。 6〇·如申請專利範圍第49〜55項中任一項之曝光裝置， 其係進一步具備台系統，以在前述曝光時，相對於前述曝 光光束同步移動前述光罩與基板； 前述補正構件，係以使前述基板被移動之掃描方向及 與該掃描方向交叉之非掃描方向，分別對應於前述第1方 向及第2方向的方式而設定； 前述調整裝置，係控制沿前述非掃描方向之前述曝光 光述的照度分布。 61. 如申請專利範圍第60項之曝光裝置，其中，前述 光學系統，係使前述曝光光束之掃描方向的寬度局部不同 ，並且，將沿前述掃描方向之曝光光束的照度分布設定成 大致梯形狀； 並且進一步具備控制裝置，用以設定前述基板的掃描 曝光條件，俾在前述基板上的既定點橫切前述照度分布的 ί頃斜部期間，使整數個曝光光束照射於前述既定點。 62. 如申請專利範圍第61項之曝光裝置，其中，前述 控制裝置，係設定前述掃描曝光條件，俾在前述照度分布 兩端的傾斜部，分別對前述既定點照射同數之曝光光束。 63. 如申請專利範圍第60項之曝光裝置，其中，前述 待定圖案，係包含以前述第2方向作爲長邊方向且沿前述 13 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐） 544755 098822 ABCD 六、申請專利範圍 第1方向變化遮光面積之圖案。 (請先閲讀背面之注意事項再塡寫本頁) 64. 如申請專利範圍第63項之曝光裝置，其中，前述 特定圖案，係相對於前述第2方向來變化前述第1方向之 遮光寬度之線圖案，或是分別沿前述第1及第2方向分布 、且相對於前述第2方向變化密度或大小之點圖案的集合 體。 65. 如申請專利範圍第60項之曝光裝置，其中，前述 特定圖案，係包含以前述第2方向作爲長邊方向、且將沿 前述第1方向變化遮光面積之複數個圖案沿前述第1方向 配列而成之圖案群； 前述複數個圖案之間隔，係與在前述既定面之距離(在 前述曝光光束之脈衝振盪期間，將前述基板所移動的距離 換算而得)不同。 66·如申請專利範圍第60項之曝光裝置，其中，前述 特定圖案，係包含以前述第2方向作爲長邊方向、且將沿 前述第1方向變化遮光面積之複數個圖案沿前述第1方向 以使其間隔不同的方式配列而成之圖案群。 67.如申請專利範圍第66項之曝光裝置，其中，前述 曝光光束係脈衝振盪，前述複數個圖案之間隔係分別與在 前述既定面之距離(在前述曝光光束之脈衝振盪期間，將前 述基板所移動的距離換算而得）、以及前述換算而得之距離 的整數倍兩者不同。 68·如申請專利範圍第60項之曝光裝置，其中，前述 特定圖案係包含：第1圖案群，具有以前述第2方向作爲 14 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐） ' ~ 544755 098829 ABCD 六、申請專利範圍 長邊方向且沿前述第1方向變化遮光面積之至少1個圖案 ;及第2圖案群，具有與前述第1圖案群實質上相同之構 成；前述第1及第2圖案群係沿前述第1方向並列配置。 69·如申請專利範圍第68項之曝光裝置，其中，前述 調整裝置，係將前述第1及第2圖案群分別沿前述第1方 向移動，來補正前述曝光光束之照度不均的凹凸成分。 7〇.如申請專利範圍第69項之曝光裝置，其中，前述 調整裝置，係將前述第1及第2圖案群分別沿前述第2方 向移動，來補正前述照度不均的傾斜成分。 71. 如申請專利範圍第70項之曝光裝置，其中，前述 調整裝置，係將前述第1及第2圖案群分別沿前述第1方 向僅位移不同量，來控制前述曝光光束之遠心性。 72. 如申請專利範圍第68項之曝光裝置，其中，前述 第1及第2圖案群，係分別以前述圖案沿前述第1方向具 有不同間隔的方式而複數配列。 73·如申請專利範圍第68項之曝光裝置，其中，前述 第1及第2圖案群係分別使前述圖案沿前述第1方向而複 數配列，前述圖案之間隔係與在前述既定面之距離(在前述 曝光光束之脈衝振盪期間，將前述基板所移動的距離換算 而得)不同。 74.如申請專利範圍第68項之曝光裝置，其中，前述 特定圖案，係相對於前述第2方向來變化前述第1方向之 遮光覓度之線圖案’或是分別沿前述第1及第2方向分布 、且相對於前述第2方向變化密度或大小之點圖案的集合 15 本紙張又度適用中國國家標準(CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再塡寫本頁) 裝 544755 A8 B8 C8 D8 六、中請專利範圍 體。 75. 如申請專利範圍第68項之曝光裝置，其中’前述 牛寺定圖案，係包含有別於前述第1及第2圖案群之一對圖 案群，該一對圖案群分別具有以前述第2方向作爲長邊力 向且沿前述第1方向變化遮光面積、並與前述圖案具有f 同形狀之另一圖案。 76. 如申請專利範圍第68項之曝光裝置，其中’前述 待定圖案，係包含以前述第2方向作爲長邊方向且沿前述 第1方向變化遮光面積、並且遮光面積及形狀之至少一方 係彼此不同之複數個遮光圖案； ， 前述調整裝置，係將前述複數個遮光圖案之1個配置 方令前述曝光光束之光程上，並沿前述非掃描方向進行前述 曝光光束之照度分布的粗調。 77. 如申請專利範圍第76項之曝光裝置，其中，前述 複:數個遮光圖案係分別設定成具有較前述圖案爲大之遮光 面積。 78. 如申請專利範圍第60項之曝光裝置，其中，前述 牛寺定圖案係包含一對圖案，該一對圖案係在前述既定面內 可分別獨立移動，並且相對於前述第2方向，沿前述第1 方向之遮光寬度係彼此逆向變化； | 前述調整裝置，係在前述照度分布之控制時，沿前述 第2方向來相對移動前述一對圖案。 79·如申請專利範圍第78項之曝光裝置，其中，前述 牛寺疋圖案’係包含相封於述弟2方向而變化沿前述第1 16 本紙張;適用中國國家標準（CNS)A4規格(210 X 297公箸了 - 一 (請先閲讀背面之注意事項存填寫本頁) ，裝 544755 A8 B8 C8 D8 六、申請專利範圍 方向的寬度、且前述遮光寬度之變化傾向係與前述一對圖 案相反之另一圖案； 前述調整裝置，係在前述照度分布之控制時，沿前述 第2方向移動前述另一圖案。 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)544755 A8B8C8D8 6. Scope of patent application (please read the precautions on the back before writing this page) The driving in the scanning direction and the non-scanning direction. The aforementioned first and second groups of shading lines are uneven in the aforementioned exposure beam with uneven illumination It moves in the scanning direction at the time of component adjustment ', and moves in the non-scanning direction at the time of adjustment of the inclined component with uneven illumination. 31 · —An exposure device that illuminates a photomask with an exposure beam, scans the photomask and the substrate synchronously, and then exposes the substrate through the pattern of the photomask, which includes: The illuminance unevenness of the foregoing exposure light beam in the non-scanning direction crossing the scanning direction; the light-shielding plate having a light-shielding pattern to adjust the illuminance distribution of the exposure light beam in the non-scanning direction; a driving device for driving the light-shielding plate; and a control device, The driving device is controlled to shift the shading plate in the channel of the exposure light beam to correct the uneven illumination. 32. The exposure device according to item 31 of the application range of the application, further comprising an exposure light source 'to generate a pulsed light beam with an oscillation frequency of less than 10KΗζ. 3 · The exposure device according to the application item 31 of the application of the application, The light-shielding plate extends in a non-scanning direction and forms light-shielding patterns having different light-shielding areas along the non-scanning direction. 34. For example, the exposure device according to item 31 of the scope of patent application further includes a memory, which memorizes the relationship between the illumination unevenness obtained in advance and the illumination unevenness correction amount obtained by the driving amount of the aforementioned light shielding plate. 35. For the exposure device with the scope of patent application No. 33, it is at the illuminance 7 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 Public Love 1 &quot; 544755 ABCD When the light beam is asymmetric in the non-scanning direction, the driving device shifts the shading plate in the non-scanning direction within the channel of the exposure beam. 36. For example, the exposure device of the 31st scope of the patent application, which further has a telecentric amount 37. The exposure device according to item 31 of the application for a patent, wherein the light-shielding plate includes: a first and a second correction plate, which have the same light-shielding pattern and make the light-shielding patterns reverse to each other. Opposition configuration; the driving device corrects the telecentric deviation by shifting the first and second correction plates only by mutually different amounts in the channel of the exposure beam. The shading plate is arranged at a position where the pattern image formed on the plate is defocused on the conjugate surface of the pattern surface of the mask. The defocus amount 5Z is the number of apertures of the exposure light on the plate. The maximum line width in the scanning direction of Α and the light-shielding pattern satisfies 5Z> FD / (2 · ΝΑ) 〇 39. If the exposure device of the 31st scope of the patent application, it further includes: a timer, and the exposure to be obtained in advance Memory for memorizing the relationship between the operating time of the device and the uneven illumination; the aforementioned control device controls the driving device corresponding to the exposure time measured by the timer, and corrects the uneven illumination. The exposure device according to the above item, wherein the light shielding plate has: a first and a second compensation plate, which have the same light shielding pattern and are arranged opposite to each other to form the light shielding patterns; and a third compensation plate, which is arranged on the From the position where the conjugate surface of the photomask is more defocused than the first and second plates and a light-shielding pattern is formed (has a larger cover than the light-shielding patterns of the first and second plates 8) The paper size applies to Chinese National Standards (CNS) A4 specification (210 X 297 mm) (please read the precautions on the back before writing this page), ^ 544755 A8 B8 C8 D8 VI. Patent application area light area. 41. If the scope of patent application item 39 Exposure equipment Among them, the driving device includes: a guide for holding and moving the sliding plates of the first, second, and third compensation plates, and a motor for moving the sliding members. 42 · —An exposure method, A person who exposes a substrate in a pattern by transferring a pattern formed on the photomask onto the substrate includes: illuminating the photomask with a pulsed exposure light beam, and inducing the illuminance of the exposure light beam on the substrate The distribution is in a ladder shape with respect to the scanning direction of the substrate; and-the substrate is scanned with an exposure beam while moving the photomask and the substrate in synchronization; the width of the inclined portion of the ladder-shaped illumination distribution is set to the pulse of the exposure beam During the period of one cycle of light emission, the distance that the substrate moves in the scanning direction is substantially an integer multiple. 43. As for the exposure method of the 42nd patent application scope, the shape of the exposure field obtained by the aforementioned exposure beam on the aforementioned substrate corresponds to the cumulative exposure amount distribution on the aforementioned substrate, relative to the scanning direction with the aforementioned substrate Cross the non-scanning direction and set its width to change sequentially. 44. A component manufacturing method, characterized in that it comprises a step of transferring a component pattern onto a workpiece using the exposure method of the first patent application. 45 · —A component manufacturing method, characterized in that it includes a step of transferring a component pattern onto a workpiece using the exposure method of the patent application scope item I4. 46 · —A component manufacturing method, characterized in that it includes a step of transferring a component pattern onto a workpiece using an exposure method according to item 42 of the patent application. 9 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page), 1T Ϊ 544755 A8 B8 C8 D8 6. Application scope 47 · —species The exposure device illuminates the mask with an exposure beam, and exposes the substrate with the exposure beam through the mask, and includes: an illuminance correction member disposed in a field that is defocused from the conjugate surface of the substrate, and The variable transmittance distribution part blocks the aforementioned exposure beam, and the control device 'g ^; determines the transmittance distribution of the aforementioned exposure beam, and corrects the telecentric disintegration amount of Fengmu for the aforementioned exposure beam of the photomask or the substrate. And uneven illumination. 48. An exposure method, which involves moving the mask and the substrate with respect to the pulsed exposure beam, and exposing the substrate with the exposure beam through the mask, including: The illuminance distribution of the exposure beam is set to have a substantially trapezoidal shape; the widths along the scanning direction of the exposure beam are different; and the scanning exposure conditions of the substrate are set so that the point of the exposure object on the substrate passes the ladder shape. During the inclined portion of the illuminance distribution, an integer number of exposure light beams are irradiated onto the point of the exposure target. 49. An exposure device for illuminating a mask with an exposure beam and exposing a substrate with the exposure beam through the mask, comprising: a correction member that is substantially perpendicular to an optical axis of an optical system through which the exposure beam passes In a predetermined plane, the transmittance distribution to the first direction of the exposure light beam has a specific pattern corresponding to a position in the second direction that intersects the first direction; and 10 papers are subject to Chinese national standards (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before writing this page) Install &quot; \ έ 544755 0 ^ 8899 ABCD VI. Patent range adjustment device, used to adjust the aforementioned exposure beam and The positional relationship of the specific pattern controls the irradiation characteristics of the exposure beam to the mask or the substrate. 50. For example, the exposure device of the 49th scope of the patent application is further equipped with a measuring device for detecting the aforementioned exposure light beam and measuring the aforementioned irradiation tolerance; the aforementioned adjusting device is obtained by setting the aforementioned specific pattern at different positions The measurement result of the measurement device is used to obtain the relationship between the driving amount of the correction member and the change amount of the irradiation characteristic, and when controlling the irradiation characteristic, the position relationship is adjusted using the obtained relationship. 51. For the exposure device according to item 49 of the scope of patent application, wherein the aforementioned adjustment device is used to calculate the irradiation characteristics before the measurement under the aforementioned irradiation characteristics for one measurement, and according to the aforementioned calculated body ί characteristics to adjust the aforementioned positional relationship. 52. The exposure device according to item 49 of the application, wherein the correction member is only a predetermined distance away from one of the exposure surface of the substrate and the conjugate surface with the exposure surface in the optical system. And configuration. 53. The exposure device according to item 52 of the application, wherein the optical system includes an illumination optical system for irradiating the exposure light beam to the photomask; the correction member is an optical device disposed in the illumination optical system. Between the integrator and the aforementioned substrate. 11 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before writing this page), and install «I 544755 A8B8C8D8 6. Application scope 54. If you apply for a patent The exposure device of the range 53 is further provided with a changing device for changing the intensity distribution of the exposure beam on the pupil surface of the illumination optical system and changing the lighting conditions of the mask; The device is for changing the lighting conditions to control the aforementioned irradiation characteristics. 55_ The exposure device according to item 54 of the patent application scope, wherein the aforementioned changing device is arranged between the light source for emitting the exposure light beam and the aforementioned optical integrator, and has an optical unit, which is included in the cutting device. The plurality of diffractive optical elements and the zoom optical system in the parent optical configuration of the illumination optical system are described. 56. For example, the exposure device of any one of 49 to 55 of the patented vehicle B of the patented vehicle B, wherein the aforementioned adjustment device controls the illumination distribution of the exposure beam so that the exposure amount distribution on the substrate is substantially uniform. -. 57. For example, the exposure device according to the 56th aspect of the patent application, wherein the specific pattern has a plurality of pattern groups independently movable in the optical system, and each pattern group includes the second direction as a length. At least one pattern that changes the light-shielding area in the side direction and in the first direction, and the adjustment device moves at least one of the plurality of pattern groups when the illumination distribution is controlled. 58. For the exposure device according to the 57th aspect of the application for a patent, wherein the aforementioned pattern is a line pattern in which the aforementioned second direction is used as the long-side direction and the degree of the aforementioned first direction is at least one locally different, or separately Distributed along the aforementioned first and second directions, and with a change density or greater relative to the aforementioned second direction12 Chinese National Standard (CNS) A4 specification (210x 297) '' (Please read the precautions on the back before filling this page) 544755 A8 B8 ___s___ 6. The collection of dot patterns in the scope of patents. (Please read the precautions on the reverse side before copying this page) 59. For example, the exposure device in the 58th area of the patent application, where the aforementioned g-rounding device is to make a pair of pattern groups along the aforementioned pattern groups The first direction moves and controls the telecentricity of the exposure beam. 60. If the exposure device according to any one of claims 49 to 55 of the scope of patent application, it is further provided with a stage system to move the photomask and the substrate synchronously with respect to the exposure beam during the exposure; the correction member, It is set such that the scanning direction in which the substrate is moved and the non-scanning direction that intersects the scanning direction correspond to the first and second directions, respectively; the adjustment device controls the aforementioned in the non-scanning direction. Illumination distribution of exposure light. 61. The exposure apparatus according to item 60 of the application for a patent, wherein the optical system is configured such that the width in the scanning direction of the exposure beam is locally different, and the illuminance distribution of the exposure beam in the scanning direction is set to a substantially trapezoidal shape. And further comprising a control device for setting the scanning exposure conditions of the substrate, so that an integer number of exposure light beams are irradiated to the predetermined point during a predetermined point on the substrate traverses an inclined portion of the illumination distribution. 62. The exposure device according to item 61 of the patent application, wherein the control device sets the scanning exposure conditions, and the inclined portions at both ends of the illuminance distribution respectively irradiate the same number of exposure beams to the predetermined points. 63. For an exposure device applying for item 60 of the patent scope, wherein the aforementioned pending pattern includes the aforementioned second direction as the long-side direction and along the aforementioned 13 paper dimensions, the Chinese National Standard (CNS) A4 specification (210 X 297) is applicable. Mm) 544755 098822 ABCD VI. Pattern of changing shading area in the first direction of patent application scope. (Please read the precautions on the back before writing this page.) 64. For the exposure device under the scope of patent application No. 63, the aforementioned specific pattern changes the shading width of the aforementioned first direction relative to the aforementioned second direction. A line pattern or an aggregate of dot patterns distributed along the first and second directions and varying in density or size relative to the second direction. 65. The exposure device according to item 60 of the application for a patent, wherein the specific pattern includes a plurality of patterns in which the second direction is used as a long side direction and a light-shielding area is changed along the first direction along the first direction. The pattern group arranged; the interval between the plurality of patterns is different from the distance on the predetermined surface (calculated by converting the distance moved by the substrate during the pulse oscillation of the exposure beam). 66. The exposure device according to item 60 of the application for a patent, wherein the specific pattern includes a plurality of patterns in which the second direction is used as a long-side direction and a light-shielding area is changed in the first direction along the first direction. Groups of patterns arranged at different intervals. 67. The exposure apparatus according to item 66 of the application, wherein the exposure light beam is pulsed, and the intervals between the plurality of patterns are respectively distances from the predetermined surface (during the pulsed oscillation of the exposure light beam, the substrate is The distance traveled is converted), and an integer multiple of the distance converted as described above is different. 68. The exposure device according to item 60 of the application for a patent, wherein the aforementioned specific pattern includes: a first pattern group with the aforementioned second direction as 14 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297) Mm) '~ 544755 098829 ABCD VI. At least one pattern in the long side direction of the patent application scope and changing the shading area along the aforementioned first direction; and the second pattern group, which has substantially the same structure as the aforementioned first pattern group; The first and second pattern groups are arranged in parallel along the first direction. 69. The exposure device according to item 68 of the application for a patent, wherein the adjustment device is to move the first and second pattern groups in the first direction, respectively, to correct unevenness in unevenness of the exposure beam. 70. The exposure device according to item 69 of the scope of patent application, wherein the adjustment device moves the first and second pattern groups in the second direction, respectively, to correct the tilt component of the uneven illumination. 71. For example, the exposure device according to the 70th aspect of the patent application, wherein the adjustment device is configured to control the telecentricity of the exposure beam by shifting the first and second pattern groups by different amounts in the first direction, respectively. 72. For the exposure device according to the 68th aspect of the patent application, the first and second pattern groups are arranged in plural in such a manner that the patterns have different intervals in the first direction. 73. The exposure device according to item 68 of the application for a patent, wherein the first and second pattern groups respectively arrange the plurality of patterns along the first direction, and the interval between the patterns is the distance from the predetermined surface ( During the pulse oscillation period of the exposure light beam, the distance traveled by the substrate is converted by conversion). 74. The exposure device according to item 68 of the scope of patent application, wherein the specific pattern is a line pattern that changes the shading degree of the first direction with respect to the second direction, or is along the first and second directions, respectively. A collection of dot patterns that vary in density and size relative to the aforementioned second direction. 15 This paper is again applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). (Please read the precautions on the back first.) (Write this page) Packing 544755 A8 B8 C8 D8 VI, please apply for patent scope. 75. For the exposure device according to the 68th aspect of the patent application, wherein the aforementioned Niu Siding pattern includes a pair of pattern groups different from one of the first and second pattern groups, and the pair of pattern groups have The two directions are another pattern in which the light shielding area is changed in the long-side force direction and along the first direction, and has the same shape as f. 76. For the exposure device according to the 68th aspect of the patent application, wherein the aforementioned pending pattern includes the aforementioned second direction as the long-side direction and the light-shielding area changing along the first direction, and at least one of the light-shielding area and shape is mutually The plurality of different light-shielding patterns are different. The adjustment device is to arrange one of the plurality of light-shielding patterns so that the light path of the exposure beam is on the optical path, and perform coarse adjustment of the illuminance distribution of the exposure beam along the non-scanning direction. 77. For the exposure device according to item 76 of the application for a patent, wherein the plurality of light-shielding patterns are set to have light-shielding areas larger than the above-mentioned patterns, respectively. 78. For the exposure device according to the 60th aspect of the application for a patent, the aforementioned Niu Siding pattern includes a pair of patterns, and the pair of patterns can be independently moved in the predetermined plane, and relative to the second direction, along the The light-shielding widths in the first direction change in opposite directions to each other; | The adjustment device moves the pair of patterns relatively along the second direction during the control of the illumination distribution. 79. The exposure device according to item 78 of the scope of patent application, in which the aforementioned Niu Temple 疋 pattern 'includes a seal in the direction of Shudi 2 and changes along the aforementioned 16th paper; the Chinese National Standard (CNS) A4 specification ( 210 X 297 Gong-one (please read the precautions on the back and fill in this page), install 544755 A8 B8 C8 D8 6. The width in the direction of the patent application, and the change tendency of the aforementioned shading width is related to the aforementioned pair of patterns Contrary to another pattern; the aforementioned adjustment device is to move the aforementioned another pattern along the second direction during the control of the aforementioned illumination distribution. (Please read the precautions on the back before writing this page) This paper size is applicable to China Standard (CNS) A4 size (210 X 297 mm)
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JP5805256B1 (en) * 2014-04-07 2015-11-04 ハイヤグ レーザーテクノロジー ゲーエムベーハーＨＩＧＨＹＡＧ Ｌａｓｅｒｔｅｃｈｎｏｌｏｇｉｅ ＧｍｂＨ Optical devices for beam shaping
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JP7446068B2 (en) 2019-09-03 2024-03-08 キヤノン株式会社 Exposure apparatus and article manufacturing method
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