473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（丨） 〔技術領域〕 本發明係有關將來自多數之照明光學系統之曝光光照 明於光罩，透過對應於前述各照明光學系統而配置之多數 .之投影光學系統，將前述光罩之圖案像轉印於基板上之曝 光方法及曝光裝置。 〔習知技術〕 近年，液晶顯示基板大多被用於個人電腦或電視受像 機之顯示元件。此種液晶顯示基板，係透過光刻之手法將 透明薄膜電極案所欲之形狀成形於玻璃基板上。作爲此種 用於光刻之裝置，係將形成於光罩上之圓形圖案，透過投 影光學系統而曝光於玻璃基板上之光阻層之投影曝光裝置 〇 但，最近液晶顯示基板有被要求大面積化之趨勢，因 此，在投影曝光裝置亦希望擴大其曝光領域（攝影領域）。 作爲此種攝影領域擴大之手段，已揭示有具有多數之投影 光學系統之掃描型曝光裝置。此種掃描型曝光裝置，具有 多數之：照明光學系統，包含將光源所射出之光束之光量 均一化之複眼透鏡等；及視野光圈，將藉由該照明光學系 統而使光量均一化之光束予以整行爲所欲之形狀，並照明 於光罩之圖案領域。 又，光罩係藉由多數配置之各照明光學系統所射出之 光束，分別照明於相異之領域（照明領域）。透過光罩之光 束，藉由對應於各照明光學系統而配置之投影光學系統， 4 (請先閱讀背面之注意事項再填寫本頁)473819 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (丨) [Technical Field] The present invention relates to illuminating the exposure light from most of the illumination optical systems in a photomask, which corresponds to each of the aforementioned illumination optical Most of the systems and projection optical systems are exposure methods and exposure devices that transfer the pattern image of the aforementioned photomask onto a substrate. [Knowledge Technology] In recent years, liquid crystal display substrates have been mostly used for display elements of personal computers or television receivers. This type of liquid crystal display substrate is formed on a glass substrate with a desired shape of a transparent thin film electrode through a photolithographic method. As such a device for photolithography, a projection exposure device that will form a circular pattern on a photomask and expose a photoresist layer on a glass substrate through a projection optical system. However, recently, liquid crystal display substrates are required As the area becomes larger, the projection exposure device also hopes to expand its exposure field (photography field). As a means of expanding such a photographic field, a scanning exposure apparatus having a large number of projection optical systems has been disclosed. This type of scanning exposure device has many: an illumination optical system, including a fly-eye lens that uniformizes the amount of light emitted by a light source; and a field-of-view aperture, which is used to uniformize the amount of light emitted by the illumination optical system. Shape the desired shape and illuminate the pattern area of the mask. In addition, the photomask illuminates the different areas (illumination areas) by the light beams emitted by the illumination optical systems of a plurality of arrangements. The light beam that passes through the reticle, through the projection optical system configured corresponding to each illumination optical system, 4 (Please read the precautions on the back before filling this page)
本紙張尺度適用中國國家鮮（CNS)A4規格（210 X 297公髮)~^ " 473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（〆） 將光罩之圖案像成像於玻璃基板上相異之投影領域。其次 ，藉由使光罩與玻璃基板同步，並對投影光學系統掃描， 而使光罩上之圖案領域全面轉印於玻璃基板上。 〔發明欲解決之課題〕 在上述構成之掃描型曝光裝置，形成於基板上之圖案 像係被多數之投影光學系統分割並投影於玻璃基板上。在 此場合，被分割後之圖案像係無任何間隙或僅以既定量重 疊而投影於玻璃基板上。 在此種具有多數之投影光學系統之曝光裝置，形成於 基板上之各投影領域(被來自各投影光學系統之曝光光所照 射之基板上之各領域)之圖案線寬較佳係被均一化。但，當 各投影光學系統之特性（成像特性等）有所差別時，即使將 多數之照明光學系統之各照射量均一化，形成於基板之圖 案線寬會有在每一投影領域相異之問題。 本發明有鑑於此，其目的係提供將來自多數之照明光 學系統之曝光光照明於光罩，透過對應於各照明光學系統 而配置之多數之投影光學系統，將形成於光罩之圖案像轉 印於基板上時，使形成於基板上之圖案線寬在各投影領域 可均一化之曝光方法及曝光裝置。 〔解決課題之手段〕 本發明爲解決上述課題，採用對應於實施形態所示之 圖1〜圖9之以下構成。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮) "' " ---------^裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 473819 A7 B7 五、發明說明（7 ) 申請專利範圍第1項之曝光方法，使來自多數之照明 光學系統（4a〜4g)之曝光光照明於光罩(M)，透過分別對應 於前述照明光學系統(4a〜4g)而配置之多數之投影光學系統 (5a〜5g)，將光罩(M)之圖案像轉印於基板(W)上’其特徵係 :預先將分別與前述基板（W)上之各投影光學系統（5a〜5§) 對應之投影領域(Pa〜Pg)之曝光光照射量設定爲既定量，並 進行曝光處理；計測對應於藉由曝光處理而形成於基板 (W)上之各投影領域(Pa〜Pg)之各圖案像之尺寸’並根據該 計測結果’使前述各尺寸達到目標値’及將照明光學系統 (4a〜4g)之曝光光照射量、照明光學系統(如〜4g)之光學特性 及投影光學系統（5a〜5g)之光學特性至少其中之一’個別變 更爲決定各投影領域(Pa〜Pg)之光學系統(4a〜4g、5a〜5g)。 依本發明，根據形成於基板（W)上之各投影領域 (Pa〜Pg)之圖案尺寸之計測結果，藉由將照明光學系統 (4a〜4g)之曝光光照射量、照明光學系統(4a〜4§)之先學特丨生 及投影光學系統（5a〜5g)之光學特性至少其中之一’個別變 更爲決定各投影領域(Pa〜Pg)之光學系統(4a〜、5a〜5幻， 即使在各光學系統（4a〜4g、5a〜5g)之特性有所差異等之場 合，亦不會受其影響，而可確實使形成於基板(W)上之多 數之投影領域(Pa〜Pg)之圖案尺寸一致。 此時，藉由預先使與基板（W)上之各投影光學系統 (5a〜5g)對應之投影領域(Pa〜Pg)之曝光光照射量’例如將其 設爲均一並設定爲既定量，進行曝光處理，而使所形成之 圖案尺寸一致。其次，藉由計測該圖案尺寸，計測係例如 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------.·裝 (請先閱讀背面之注意事項再填寫本頁) ----訂------ 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 473819 A7 --- B7 五、發明說明（今） . 可實現短時間處理等，而可有效率地進行。 又，尺寸係指圖案之線寬及間隔、圖案位置等，沿著 基板W板面之方向之尺寸値。在此場合，亦包含孔狀之圖 案之直徑。 又，投影領域係指被各投影光學系統之曝光光照射之 基板上之各領域。 此時，如申請專利範圍第2項，藉由於變更照明光學 系統(4a〜4g)之各曝光光照射量時，預先求得曝光光照射量 之變化量與圖案像之尺寸變化量之關係，根據該關係而變 更照明光學系統(4a〜4g)之曝光光照射量，而可有效率地求 得照明光學系統(4a〜4g)之最適當之曝光光照射量。 申請專利範圍第7項之曝光裝置，具有：多數之照明 光學系統(4a〜4g)，將來自光源（11)之曝光光照明於光罩(M) ;及多數之投影光學系統(5a〜5g)，分別對應於照明光學系 統(4a〜4g)而配置，將被曝光光罩明之光罩(μ)之圖案像轉 印於基板(W)上，其特徵具有：尺寸計測系統(30)，計測對 應於形成於基板(W)上之投影光學系統（5a〜5g)之各投影領 域(Pa〜Pg)之圖案像之尺寸；及控制系統(7)，根據尺寸計測 系統（30)之計測結果，而將照明光學系統(4a〜4g)之曝光光 照射量、照明光學系統(4a〜4g)之光學特性及投影光學系統 (5a〜5g)之光學特性至少其中之一，分別個別變更爲決定各 投影領域(Pa〜Pg)之光學系統(4a〜4g、5a〜5g)。 依本發明，藉由尺寸計測系統(30)計測基板(W)上之各 投影領域(Pa〜Pg)之圖案尺寸，照明光學系統(4a〜4g)之曝光 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） n 1 n ·ϋ 1« n ϋ n mtaw ·ϋ I 1 ϋ ·ϋ I > n n ·ϋ I I _ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 473819 A7 五、發明說明（< ) 光照射量、照明光學系統(4a〜4g)之光學特性及投影光學系 統(5a〜5g)之光學特性至少其中之一，可根據尺寸計測系統 (3〇)之計測結果而分別加以變更。如此，各照明光學系統 (4a〜4g)之曝光光照射量、各照明光學系統(4a〜4g)之光學特 性及各投影光學系統（5a〜5g)之光學特性，可根據形成於基 板(W)上之各投影領域(Pa〜Pg)之圖案尺寸之計測結果而予 以調整，因此，例如即使在各光學系統(4a〜4g、5a〜5g)之 特性相異之場合，亦不會受其影響，而可使形成於基板 (W)上之各投影領域(Pa〜Pg)之圖案尺寸均一化。 此時，如申請專利範圍第8項，藉由設置照射量計測 系統(22)，計測分別與基板(W)上之投影光學系統(5a〜5g)對 應之投影領域(Pa〜Pg)之曝光光照射量，並且，控制系統(7) ，係根據照射量計測系統(22)之計測結果，而可變更照明 光學系統(4a〜4g)之各曝光光照射量，因此，各照明光學系 統(4a〜4g)之曝光光照射量之調整，係例如以照射量計測系 統（22)計測在基板(W)上之各投影領域(Pa〜Pg)之曝光光照 射量，使此時之各照射量均一，而在調整各照明光學系統 (4a〜4g)之照射量後，根據尺寸計測系統（30)之計測結果而 進行。 如申請專利範圍第3項之曝光方法或申請專利範圍第 9項之曝光裝置，由於藉由作爲投影光學系統(5a〜5g)之光 學特性，使用焦點位置調整裝置（58、58a、61、61a、LC) 而變更焦點位置，投影光學系統之解像力變化，而使圖案 像之尺寸變化，因此，可調整形成於基板(W)上之多數之 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱)' " (請先閱讀背面之注意事項再填寫本頁) 裝---- 訂----- 473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（w) 投影領域(Pa〜Pg)之各圖案尺寸。 又，如申請專利範圍第4項之曝光方法或申請專利範 圍第10項之曝光裝置，在照明光學系統(4a〜4g)之光路上 之既定位置，設置具有可使曝光光通過之可變之開口之光 學部件(70)，由於亦可藉由變更該光學部件(70)之開口而變 化解像力，因此，可調整圖案之尺寸。 或是，如申請專利範圍第5項之曝光方法或申請專利 範圍第11項之曝光裝置，作爲投影光學系統(5a〜5g)之光 學特性，由於亦可藉由使用開口數調整裝置(80)變更各開 口數而使圖案像之尺寸變化，因此可調整所形成圖案之尺 寸。 進而，如申請專利範圍第6項之曝光方法或申請專利 範圍第12項之曝光裝置，作爲照明光學系統(4a〜4g)之光 學特性.，亦可使用波長調整裝置（13)變更藉由照明光學系 統(4a〜4g)之曝光光之波長，因此，可調整圖案之尺寸。 〔發明之實施形態〕 (弟1實施形態） 以下、參照圖面說明本發明之曝光方法及曝光裝置之 第1實施形態。圖1係表示本發明之曝光裝置之槪略構成 圖’圖2係說明圖1中保持光罩Μ及基板W之托架9之立 體圖。 在圖1、圖2，曝光裝置1，具有：多數之照明光學系 統4(4a〜4g)，將來自光源11之光束(曝光光)照明於光罩μ 9 ------------裝--------訂— (請先閱讀背面之注意事項再填寫本頁) 着_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮） 經濟部智慧財產局員工消費合作社印製 473819 A7 B7 五、發明說明（7 ) ;視野光圈8，配置於該照明光學系統4，調整使光束通過 之開口 S之面積而限定藉由此光束之光罩Μ之照明範圍·’ 多數之投影光學系統5(5a〜5g)，對應多數之照明光學系統 4而配置，將被曝光光罩明之光罩Μ之圖案像轉印於基板 W上；及控制部(控制系統)7，調整各照明光學系統4之曝 光光照射量。 進而，曝光裝置1具有尺寸計測系統30，計測形成於 基板上之與各投影光學系統5之位置之圖案像尺寸’控制 部7根據尺寸計測系統30之計測結果，而可獨立調整各照 明光學系統4a〜4g之曝光光照射量。又基板W係被設於托 架9之下段側之基板台9a所保持，另一方面，光罩Μ係被 設於托架9之上段側之光罩台9b所保持。又，這些基板W 及光罩Μ係被托架9 一體保持。 照明光學系統4，具有：由超高壓水銀燈等所形成之 光源11 ;用以驅動光源11之光源驅動部(電源）Ha ;將光 源11所射出之光束予以聚光之橢圓鏡12 ;在被橢圓鏡12 聚光後之光束之中，僅使曝光所需之波長通過之波長'濾波 器(波長調整裝置）13 ;將通過波長濾波器13之光束調整爲 均一照明度分布之光束之複眼透鏡15 ;及透鏡系統14、16 、I7。此時，視野光圏8，係配置於由複眼透鏡15所射入 之透鏡系統16與透鏡系統17之間。 照明光學系統4，係配置爲多數（在本實施形態爲 4a〜4g等7個，但在圖1中爲方便起見僅說明對應於透鏡 系統Π者），多數之照明光學系統4a〜4g所射出之曝光光 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） --------------------1--------- (請先閱讀背面之注意事項再填寫本頁) 473819 A7 B7 五、發明說明（g ) 係分別照明於光罩Μ上之相異的少量域(照明領域）。 (請先閱讀背5之注意事項再填寫本頁) 視野光圈8,例如係將彎曲爲平面L字形之一對葉片 與光束之光軸呈垂直交叉狀態所組合而成之矩形狀之開口 S所構成’這些葉片被未圖示之驅動機構在與光軸垂直交 叉之面內移動。即，視野光圈8係隨著葉片位置之變化而 可變化開口 S之大小，並使由複眼透鏡15所射入光束之中 ，僅通過開口 S之光束（曝光光)傳送至透鏡系統17。此視 野光圏8係對應於各照明光學系統4a〜4g而設爲多數。 在被保持於光罩台9b之光罩Μ，形成必須被轉印於基 板W之圖案。又，以各視野光圈8限定其照明領域，並藉 由透過各透鏡系統17之曝光光，照明於光罩Μ相異之領域 (照明領域）。 經濟部智慧財產局員工消費合作社印製 在照明光學系統4a〜4g之各光路中，於複眼透鏡15與 透鏡系統16之間設置半反射鏡18。此半反射鏡18，係使 照明光學系統4a〜4g之各光束之一部份透過透鏡系統19而 射入於偵測器20。偵測器20係對應各照明光學系統4a〜4g 而設置爲多數（此場合爲7個），常時，獨立檢出各照明光 學系統4a〜4g之光束強度，並將各檢出信號傳送至控制部 7。即，各照明光學系統4a〜4g之曝光光照射量(設於各照 明光學系統4a〜4g之各光源11之照射量），係可藉由偵測 器2〇獨立檢出，並分別將檢出信號傳送至控制部7。 在透鏡系統I4之光路下流側設置濾波器41。此濾波 器41，如圖3所示，係於玻璃基板41a上以Cr等形成簾 狀，透射率係沿Y方向之範圍以線形漸次變化。又，與濾 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（f) 波器41連接之濾波器驅動部42，根據控制部7之指示使 濾波器41往Y方向移動。控制部7 ’根據偵測器20之檢 出結果驅動濾波器驅動部42,以使濾波器41移動而調整 每一光路之光量。 投影光學系統5(5a〜5g)，係用以將存在於被開DS所 限定之光罩Μ之範圍之圖案像成像於基板W上，將圖案像 曝光於基板W之特定領域，並對應於各照明光學系統 4a〜4g而配置。此時，投影光學系統5a、5c、5e、5g與投 影光學系統5b、5d、5f係配列爲2列之矩陣狀，各投影光 學系統5a〜5g，係使由照明光學系統4a〜4g所射出並透過 光罩Μ後之多數之曝光光透過，並將形成於光罩Μ之圖案 像投影至被基板台所保持之基板W上。即，透過各投影光 學系統5a〜5g之曝光光，係將與光罩Μ之照明領域對應之 圖案像成像於基板W上之相異之投影領域。 各投影光學系統5a〜5g，如圖4所示，具有：透過光 罩Μ之曝光光所射入之像移機構53 ; 2組反射折射型光學 系統54、55 ;視野光圈56 ;及倍率調整機構57。 像移機構53，例如，2片平行平板玻璃藉由分別於Υ 軸周圍或Ζ軸周圍旋轉，而將光罩Μ之圖案像往X方向或 Υ方向移動。透過像移機構53之曝光光則射入第1組之反 射折射型光學系統54。 反射折射型光學系統54，係形成光罩Μ之中間像，並 具有直角棱鏡58、透鏡59及凹面鏡60。_在直角稜鏡58連 接稜鏡移動裝置58a，藉由稜鏡移動裝置58a，使直角稜鏡 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂— (請先閱讀背面之注意事項再填寫本頁) 禮丨 473819 Α7 ____ Β7 五、發明說明（、:〕、） (請先閱讀背面之注意事項再填寫本頁) 58於Z軸周圍旋轉，而使光罩μ之圖案像旋轉。進而，直 角稜鏡58藉由稜鏡移動裝置58a，於圖中，相對於光路而 可於出入方向(X方向）移動。 在光罩Μ之圖案之中間像配置視野光圈56。視野光圏 56係用以設定在基板w上之投影領域pa〜pg(參照圖5)。通 過視野光圏5 6之曝光光則射入第2組之反射折射型光學系 統55。反射折射型光學系統55，係與反射折射型光學系統 54同樣地，具有直角稜鏡61、透鏡62及凹面鏡63。又， 直角稜鏡61亦連接於稜鏡移動裝置61a，並且可在Z軸周 圍旋轉自如，而使光罩Μ之圖案像旋轉。進而，直角稜鏡 61藉由稜鏡移動裝置61a，於圖中，相對於光路而可於出 入方向(X方向)移動。 經濟部智慧財產局員工消費合作社印製 由反射折射型光學系統55所射出之曝光光，係以正立 等倍將光罩Μ之圖案像成像於基板W上。在反射折射型光 學系統55，倍率調整機構57係通過透鏡62，並且設於到 達直角稜鏡61之光路中。倍率調整機構57，例如，係由 平凸透鏡、雙凸透鏡、平凹透鏡等3枚透鏡所構成，藉由 使位於平凸透鏡與平凹透鏡間之雙凸透鏡往Ζ軸方向移動 ，而變化光罩Μ之圖案像之倍率。 又，倍率調整機構57，可設爲在凹面鏡63反射，並 且設於到達透鏡62之光路中。又，亦可在反射折射型光學 系統55與基板W之間設置倍率調整機構57。 將光罩Μ及基板W-體保持之托架_9，設爲可往圖中 X方向移動。在此場合，如圖2所示，托架9係設爲藉由 13 本張尺度適用中國國家標準（CNS)A4規格（210 X 297公""" 經濟部智慧財產局員工消費合作社印製 473819 A7 B7 五、發明說明（1丨） 未圖示之驅動源，使其可沿X導引軸23移動。即，藉由 使托架9沿X導引軸23移動，使托架9對照明光學系統4 及投影光學系統5相對移動。此時，各照明光學系統 4a〜4g及各投影光學系統5a〜5g係被未圖不之固定支持部 所固定。 ^ 配置爲矩陣狀之各投影光學系統5a〜5g，係配置爲使 相鄰之投影光學系統(例如投影光學系統5a與5b、5b與 5c)往X方向以既定量變位。因此，如圖5所示，由透過各 投影光學系統5a〜5g之曝光光所形成之基板W上之投影領 域Pa〜Pg之中，使相鄰之領域(例如Pa與Pb、Pb與Pc)往 X方向以既定量變位而投影。此時，相鄰之投影領域之端 部，係配置爲往Y方向以既定量（例如5mm)重疊。即’上 述多數之投影光學系統5a〜5g，係對應各投影領域Pa〜Pg 之配置，往X方向以既定量變位，並且往Y方向重疊配置 。又，多數之照明光學系統4a〜4g之配置，係使光罩Mi： 之照明領域與上述之投影領域Pa〜Pg同樣配置，即對應投 影光學系統5a〜5g而配置。又，在此場合，各投影光學系 統5a〜5g皆爲等倍正立系統。 其次，將光罩Μ及基板W—體保持之托架9，藉由沿 X導引軸23移動，即藉由對照明光學系統4及投影光學系 統5往X方向掃描，而將形成於光罩Μ之圖案像全部轉印 於基板W上之攝影領域Ε Α。 在托架9之中，於保持基板W之側之基板台9a的一部 份，設置計測對應於此基板W上各照明光學系統4a〜4g之 14 ------------裝--------訂--- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473819 A7 B7 五、發明說明（/X) (請先閱讀背面之注意事項再填寫本頁) 位置之曝光光照射量之照明度感測器（照射量計測系統）22 。照明度感測器22，具有在托架9上Y方向之導引軸24， 並設置與基板W同一平面高度。即，照明度感測器22，係 設爲藉由照明度感測器驅動部21，可往與托架9(基板台 9a)之移動方向（X方向)垂直交叉之方向（Y方向)移動。 照明度感測器22，在進行1次或多數次曝光之前，藉 由托架9之X方向移動及照明度感測器驅動部21之Y方向 移動，在對應投影光學系統5a〜5g之各投影領域pa〜Pg之 下進行掃描。因此，在基板W之曝光面上之照明光強度（照 明度），係藉由照明度感測器22以2度空間檢出。又，以 照明度感測器22檢出之照明度資料係傳送至控制部7。 線寬計測機（尺寸計測系統)30，係用以計測形成於與 各投影光學系統5a〜5g對應之各投影領域Pa〜Pg之圖案尺 寸。在此場合，線寬計測機30，係計測形成於基板W上之 圖案線寬，可使用例如光波干涉式測定機或測長SEM等之 光學式或電子束式等測定機。 經濟部智慧財產局員工消費合作社印製 又，此處所言之尺寸，係指，圖案之線寬及間隔、圖 案位置等沿基板W板面方向之尺寸値。在此場合，亦包含 孔狀之圖案直徑。 線寬計測機30，係用以在將光罩Μ之圖案像投影並進 行顯像處理後，計測基板W上之各投影領域Pa〜：Pg之圖案 線寬，並且，爲了進行顯像處理及計測被保持於基板台9a 之基板W之圖案線寬，因此設於托架9附近。其次，以線 寬計測機30檢出之基板上各投影領域Pa〜Pg之圖案線寬 15 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 經濟部智慧財產局員工消費合作社印製 473819 A7 ---- B7 五、發明說明（4) 資料(尺寸資料)傳送至控制部7。 以下說明藉由具有此種結構之曝光裝置1，將光罩Μ 之圖案像轉印於基板W上之動作。 在曝光之前，照明度感測器22被照明度感測器驅動部 21往Υ方向驅動，同時，將托架9往X方向驅動。依此， 照明度感測器22，係在對應投影光學系統5a〜5g之各投影 領域Pa〜Pg之下進行掃描。此時，基板w之照明度係由照 明度感測器22所檢出。 被照明度感測器22所檢出之在基板W上各投影領域 Pa〜Pg之照明度檢出信號傳送至控制部7。控制部7根據 照明度感測器22之檢出信號，以各偵測器20檢出並調整 各照明光學系統4a〜4g之曝光光照射量，俾使對應投影光 學系統5a〜5g之各投影領域pa〜pg之照明度均一。 即，在進行曝光處理之前，使用照明度感測器22，將 各投影領域Pa〜Pg之曝光光之照明度設定爲均一。 其次，光罩Μ即基板W係透過未圖示之裝載機，分別 供給至光罩台9b及基板台9a。被供給至光罩台9b及基板 台9a之光罩Μ及基板W，藉由相對於照明光學系統4及投 影光學系統5之未圖示之調準系統予以調準。 在光罩Μ及基板W之調準結束後，托架9係沿著X導 引軸23而被驅動。光罩Μ及基板W係被托架9保持之狀態 下被一體掃描。另一方面，照明光學系統4a〜4g往光罩Μ 射出曝光光。這些曝光光透過所掃描之光罩Μ，分別藉由 對應於各照明光學系統4a〜4g而設置之投影光學系統 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 473819 A7 B7 五、發明說明（、t) 5a〜5g，將光罩Μ之圖案像成像於與光罩Μ—起掃描之基板 W上相異之投影領域Pa〜Pg。依此，形成於光罩Μ之圖案 像被轉印於基板W。 如此，使其在各投影領域Pa〜Pg之照明度被控制爲均 一之狀態下，進行對基板W之1次曝光。 在各投影領域Pa〜Pg之照明度均一化之狀態下，對曝 光處理後之基板W進行顯像處理。顯像處理完成後之基板 W，以線寬計測機30計測形成於各投影領域Pa〜Pg之圖 案線寬。線寬計測機30將所測得之線寬資料傳送至控制部 7。控制部7根據線寬計測機30之計測結果，調整各照明 光學系統4a〜4g之曝光光照射量。 控制部7，以線寬計測機30計測預先於基板W上對應 於各投影領域Pa〜Pg所形成之各投影領域Pa〜Pg之圖案尺 寸’並根據該計測結果調整各照明光學系統4a〜4g之曝光 光照射量，使各各投影領域Pa〜Pg之圖案線寬達到目標値 〇 此時，控制部7根據預先求得之曝光光照射量之變化 量及圖案像之線寬變化量（尺寸變化量）之關係，進行照明 光學系統4a〜4g之曝光光照射量之調整。 在此場合，於任意變化照明光學系統4a〜4g之曝光光 照射量之後，預先多數求得在基板W上之圖案像之線寬變 化量之資料，並根據該多數之資料（資料表）調整照明光學 系統4a〜4g之曝光光照射量，使線寬計測機30之計測結果 與目標値（目標之線寬)一致。 17 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂i 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（) 即’照明光學系統4之照射量變化量與基板W之圖案 像之線寬變化量之關係，係可根據與照明光學系統4之照 身寸量變化量相對之基板W之圖案像之線寬變化量之實驗的 同定結果而預先設定。 或是，亦可根據上述之資料表，以關係式求得照明光 ^系統4a〜4g之曝光光照射量之變化量及與此相對之基板 W之圖案像之線寬變化量之關係，並根據該關係式，由線 寬計測機30之計測結果而調整照明光學系統4a〜4g之曝光 光照射量。即，求得在照射量之變化量與線寬變化量之關 係之多數條件之資料，並藉由相對於該資料而進行調整， 以求得關係式。 控制部7,根據上述之資料表或關係式調整調整照明 光學系統4a〜4g之曝光光照射量，俾使基板W上之圖案像 之線寬達到目標之線寬。即，根據線寬計測機30之計測結 果與前述資料表或關係式，使各投影領域Pa〜Pg之圖案線 寬達到目標値，具體言之，使投影領域Pa〜Pg之圖案線寬 均一，而以附設於照明光學系統4a〜4g之偵測器20檢出曝 光光照射量，並以控制部7調整各照明光學系統4a〜4g(即 ，光源11之電源11a)之輸出。 其次，在曝光光照射量之調整結束後，再度對基板W 進行曝光處理。 如此，由於計測形成於基板W上之圖案線寬（尺寸）， 並根據該計測結果獨立調整各照明光學系統4a〜4g之曝光 光照射量，使各投影領域Pa〜Pg之圖案線寬均一，因此， 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------Awt --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 473819 A7 _ B7 五、發明說明（A) 形成於基板上之多數之投影領域Pa〜Pg之圖案線寬可確實 地均一化。 即，例如即使將各照明光學系統4a〜4g之曝光光照射 量設定爲均一，由於以投影光學系統5爲始之各透鏡系統 之特性相異，導致形成於基板W上之線寬會因各投影領域 Pa〜Pg而產生差異之情況。 但’藉由曝光及顯像處理，直接計測形成於基板W之 各投影領域Pa〜Pg之圖案線寬，並根據該計測結果，藉由 分別獨立調整各照明光學系統4a〜4g之照射量，即使具有 以投影光學系統5爲始之各透鏡系統之或各機器之特性差 異’或抗蝕感度等之差異，亦可確實地使基板W之各投影 領域Pa〜Pg之圖案線寬均一化。因此，可提升製造基板W 之產能。 其次，將照明光學系統4之曝光光照射量之變化量與 形成於基板W上之圖案像之線寬變化量之關係，以關係式 或資料表方式預先求得，並藉由根據該關係式進行照明光 學系統4a〜4g之曝光光照射量之調整，可有效率地設定照 明光學系統4a〜4g最適當之曝光量。 又’關係式，如前所述，係根據隨著照射量之變化量 而變化之線寬變化量之多數的資料之調整而求得，在此場 合之一例，例如： D =(a(E/E〇)+b)AE ... (1) 此處， E :照射量 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------^--------1--------- (請先閱讀背面之注意事項再填寫本頁) 473819 經濟部智慧財產局員Η消費合作社印製 A7 B7 五、發明說明（/p E:照射量之變化量 D :線寬（// m) D :線寬變化量（#m) E〇 :最適當之照射量 a:由調整所求得之係數 b:由調整所求得之係數 例如，在a=-3，b=5，E=E〇之場合，相對於照射 量之變化量△ E 10%，線寬變化量△ D則變爲0·2 // m。預 先求得（1)式之關係式’並藉由相對於作爲目標之線寬變化 量AD而變化照射量，可容易且有效率地求得各照明光學 系統4a〜4g之最適當之照射量。 在以線寬計測機30計測基板W之線寬時，以照明度感 測器22計測預先求得與基板W之各投影領域Pa〜Pg相對 之曝光光照射量，並依此預先使各投影領域Pa〜pg之照明 度均一化，而使透過線寬計測機30之線寬計測(尺寸計測) ，可以均一之照明度對基板W進行曝光。因此，可有效率 地進行線寬計測。 即，藉由預先使在基板W上各投影領域Pa〜Pg之曝光 光照射量均一化之狀態，可使各投影領域Pa〜Pg之圖案線 寬獲得一致。因此，在線寬計測機30之基板W上各投影領 域Pa〜Pg之線寬計測，可實現以較短處理時間而有效率地 進行。 又，雖已說明將線寬計測機30之信號線連接於曝光裝 置1，但，操作者亦可透過與曝光裝置1相異之線寬計測 20 ------------裂---- (請先閱讀背面之注意事項再填寫本頁) 訂--------- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（p) 裝置計測圖案尺寸’並將該圖案尺寸之値輸入曝光裝置1 〇 又，亦可由所求得之圖案尺寸’將最適當之照射量指 不於控制部7。 又，形成於基板W上之圖案形狀’並未限於具有線寬 者。例如，此種曝光裝置1 ’亦可適用於接觸孔之製造。 雖然形成於液晶顯示元件圖案用基板之接觸孔必須使其在 基板上具有均一之大小’但’藉由本貫施形態之曝光方法 及曝光裝置而製造，即使圖案形狀爲孔狀’亦可使多數之 投影領域之各圖案形狀均一。 (第2實施形態） 其次，參照圖面，說明本發明之曝光方法及曝光裝置 之第2實施形態。此處，與前述第1實施形態相同或同等 之構成部份，使用同一符號，並將該說明簡化或省略。 在第1實施形態，係計測對應於形成於基板W上各投 影領域Pa〜Pg之各圖案尺寸，並根據該計測結果，進行各 照明光學系統之曝光光照射量，以使各尺寸達到目標値， 在第2實施形態，爲使形成於基板W之圖案尺寸達到目標 値，而在投影光學系統5之光學特性之中，進行投影光學 系統5a〜5g之各焦點位置之變更。 可變更投影光學系統5(5a〜5g)之焦點位置之焦點位置 調整裝置，係由在圖4所示之投影光學系統5之中，可將 直角稜鏡58(或61)往圖中X方向移動之稜鏡移動裝置58a( 21 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（J) 或61a)所構成。又，藉由以稜鏡移動裝置58a使直角稜鏡 58往X方向僅移動既定量，而變化投影光學系統5之焦點 位置。藉由同時具有直角稜鏡58及可使該直角稜鏡58之 稜鏡移動裝置58a兩者之焦點位置調整裝置，以使投影光 學系統5之焦'點位置與基板W之曝光處理面形成不一致， 並使透過投影光學系統5之曝光光在基板W之曝光處理面 形成散焦狀態。因此，形成於基板W上之圖案像之線寬會 變粗。又，藉由以此散焦狀態進行曝光處理，使形成於基 板W之圖案線寬，比在投影光學系統5之焦點位置與基板 W之曝光處理面一致之狀態進行曝光處理之場合更粗。 以下，說明藉由具有上述構成之曝光裝置1，將形成 於光罩之圖案像轉印於基板W上之動作。 首先，與第1實施形態同樣，在進行曝光處理之前， 使用照明度感測器22，設定使各投影領域Pa〜Pg之曝光光 之照明度均一。其次，將光罩Μ及基板W分別載置於光罩 台9b及基板台9a之後，進行對基板之第1次曝光處理。 在各投影領域Pa〜Pg之照明度均一化之狀態下，對被 曝光處理後之基板W進行顯像處理。其次，線寬計測機30 計測形成於被顯像處理後之基板W之各投影領域Pa〜Pg之 圖案線寬，並將所測得之線寬資料往控制部7輸出。控制 部7根據線寬計測機30之計測結果，個別驅動各投影光學 系統5a〜5g之稜鏡移動裝置58a(或61a)。藉由稜鏡移動裝 置58a(或61a)之驅動，使直角稜鏡58(或61)分別往X方向 移動，而個別變更投影光學系統5a〜5g之焦點位置。 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------IJ---------籲 (請先閱讀背面之注意事項再填寫本頁) 473819 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（7/C)) 此時，控制部7，根據投影光學系統5之焦點位置變 化量與此時所形成之圖案像之線寬變化量（尺寸變化量）之 關係(資料表、關係式），驅動稜鏡移動裝置58a，並進行投 影光學系統5a〜5g之焦點位置之調整’以使在基板W上之 圖案像之線寬達到目標値。例如，欲使在某一投影領域之 圖案線寬變粗之場合，對基板W之曝光處理面，使其焦點 位置移動變大。 其次，在結束各投影光學系統5a〜5§之焦點位置之調 整後，再度進行對基板W之曝光處理。 如此，藉由計測形成於基板w之圖案線寬（尺寸）’並 根據該計測結果獨立變更各投影光學系統5a〜5g之焦點位 置，而使各投影領域Pa〜Pg之線寬均一，因此，形成於基 板W上之多數之投影領域Pa〜Pg之圖案線寬可確實地均一 化。此時，例如，當以線寬計測機30所測得之某一投影領 域之基板上之圖案線寬比另一投影領域之圖案線寬更細時 ，可將對應於該投影領域之投影光學系統5之焦點位置與 基板W之曝光處理面偏移，使外觀上之圖案像之線寬變粗 ，因而使形成於基板W之圖案線寬變粗。 又，在本實施型態，使投影光學系統5之焦點位置變 更之焦點位置調整裝置，雖以用於使構成投影光學系統5 之直角稜鏡移動之稜鏡移動裝置58a所構成，但，例如圖 6所示，亦可由配置於投影光學系統5之光路上既定位置 之透鏡控制器LC所構成。透鏡控制器LC，如圖6所示， 係由設於直角稜鏡61之光路下流側並可使曝光光透過之箱 23 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂---- (請先閱讀背面之注意事項再填寫本頁)This paper size is applicable to China National Fresh (CNS) A4 specification (210 X 297) ^ " 473819 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (〆) Imaging the pattern image of the photomask Different projection areas on glass substrates. Secondly, by synchronizing the photomask with the glass substrate and scanning the projection optical system, the pattern area on the photomask is fully transferred on the glass substrate. [Problems to be Solved by the Invention] In the scanning-type exposure apparatus configured as described above, a pattern image formed on a substrate is divided by a plurality of projection optical systems and projected on a glass substrate. In this case, the divided pattern image is projected on the glass substrate without any gap or overlapping with a predetermined amount. In such an exposure device having a large number of projection optical systems, the pattern line width of each projection area (each area on the substrate illuminated by exposure light from each projection optical system) formed on the substrate is preferably uniformized. . However, when the characteristics (imaging characteristics, etc.) of each projection optical system are different, even if the irradiation amounts of most illumination optical systems are uniformized, the pattern line width formed on the substrate will be different in each projection area. problem. The present invention has been made in view of this, and its object is to provide exposure light from a plurality of illumination optical systems to a reticle, and to convert a pattern image formed on the reticle through a plurality of projection optical systems arranged corresponding to each illumination optical system. When printing on a substrate, an exposure method and an exposure device for making the pattern line width formed on the substrate uniform in each projection area. [Means for solving problems] In order to solve the problems described above, the present invention employs the following configurations shown in Figs. 1 to 9 corresponding to the embodiments. 5 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297). &Quot; '" --------- ^ 装 -------- Order ----- ---- (Please read the precautions on the back before filling out this page) 473819 A7 B7 V. Description of the invention (7) The exposure method for item 1 of the scope of patent application makes the majority of the illumination optical system (4a ~ 4g). The exposure light is illuminated on the mask (M), and the pattern image of the mask (M) is transferred to the substrate through most of the projection optical systems (5a to 5g) arranged corresponding to the aforementioned illumination optical systems (4a to 4g). (W) is characterized in that the exposure light exposure amount of the projection area (Pa to Pg) corresponding to each of the projection optical systems (5a to 5§) on the substrate (W) is set to a predetermined amount, and Perform exposure processing; measure the size of each pattern image corresponding to each projection area (Pa ~ Pg) formed on the substrate (W) by the exposure processing, and 'make the aforementioned dimensions reach the target' according to the measurement result 'and The exposure light exposure amount of the illumination optical system (4a ~ 4g), the optical characteristics of the illumination optical system (e.g. ~ 4g), and the optics of the projection optical system (5a ~ 5g) Wherein at least one of the 'individual decisions of others becomes art projection (Pa~Pg) of the optical system (4a~4g, 5a~5g). According to the present invention, according to the measurement result of the pattern size of each projection area (Pa ~ Pg) formed on the substrate (W), the exposure light exposure amount of the illumination optical system (4a ~ 4g) and the illumination optical system (4a) ~ 4§) of the first learner and at least one of the optical characteristics of the projection optical system (5a ~ 5g) 'individually changed to the optical system (4a ~, 5a ~ 5) that determines each projection area (Pa ~ Pg) Even when the characteristics of each optical system (4a ~ 4g, 5a ~ 5g) are different, it will not be affected by it, and it can surely make most projection areas (Pa ~) formed on the substrate (W) The pattern size of Pg) is the same. At this time, the exposure light irradiation amount of the projection area (Pa to Pg) corresponding to each projection optical system (5a to 5g) on the substrate (W) is set in advance to, for example, The uniformity is set to a predetermined amount, and the exposure process is performed so that the size of the formed pattern is consistent. Second, by measuring the size of the pattern, the measurement system is, for example, 6 paper sizes applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). Li) ------------. · Install (please read the precautions on the back before filling Page) ---- Order ------ Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 473819 A7 --- B7 V. Description of Invention (Today) Time processing can be performed efficiently. In addition, the size refers to the line width and interval of the pattern, the position of the pattern, etc., and the dimension along the direction of the W surface of the substrate. In this case, the pattern of the hole shape is also included. In addition, the projection field refers to each field on the substrate illuminated by the exposure light of each projection optical system. At this time, as in the second item of the patent application scope, each exposure light due to the change of the illumination optical system (4a ~ 4g) In the case of the exposure amount, the relationship between the change amount of the exposure light exposure amount and the size change of the pattern image can be obtained in advance, and the exposure light exposure amount of the illumination optical system (4a to 4g) can be changed according to the relationship, and it can be obtained efficiently. The most appropriate exposure light exposure amount of the illumination optical system (4a ~ 4g). The exposure device of the seventh scope of the patent application has: most of the illumination optical system (4a ~ 4g), which illuminates the exposure light from the light source (11) On photomask (M); and more The projection optical system (5a to 5g) is arranged corresponding to the illumination optical system (4a to 4g), and the pattern image of the exposed mask (μ) is transferred to the substrate (W). : Size measurement system (30), which measures the size of the pattern image corresponding to each projection area (Pa ~ Pg) of the projection optical system (5a ~ 5g) formed on the substrate (W); and the control system (7), according to The measurement result of the size measurement system (30), the exposure light exposure amount of the illumination optical system (4a to 4g), the optical characteristics of the illumination optical system (4a to 4g), and the optical characteristics of the projection optical system (5a to 5g) are at least One of them is individually changed to an optical system (4a to 4g, 5a to 5g) that determines each projection area (Pa to Pg). According to the present invention, the size measurement system (30) measures the pattern size of each projection area (Pa ~ Pg) on the substrate (W), and the exposure of the illumination optical system (4a ~ 4g). CNS) A4 specification (210 X 297 mm) n 1 n · ϋ 1 «n ϋ n mtaw · ϋ I 1 ϋ · ϋ I > nn · ϋ II _ (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 473819 A7 V. Description of Invention ( <) At least one of the amount of light exposure, the optical characteristics of the illumination optical system (4a to 4g), and the optical characteristics of the projection optical system (5a to 5g) can be separately added based on the measurement results of the size measurement system (30). change. In this way, the exposure light exposure amount of each illumination optical system (4a to 4g), the optical characteristics of each illumination optical system (4a to 4g), and the optical characteristics of each projection optical system (5a to 5g) can be formed on the substrate (W ) And adjust the measurement result of the pattern size of each projection area (Pa ~ Pg), so even if the characteristics of each optical system (4a ~ 4g, 5a ~ 5g) are different, it will not be affected by it. Effect, and the pattern size of each projection area (Pa ~ Pg) formed on the substrate (W) can be made uniform. At this time, if item 8 of the scope of patent application is applied, an exposure measurement system (22) is provided to measure the exposure in the projection area (Pa to Pg) corresponding to the projection optical system (5a to 5g) on the substrate (W). The amount of light exposure, and the control system (7) can change each exposure light exposure amount of the illumination optical system (4a to 4g) based on the measurement result of the exposure amount measurement system (22). Therefore, each illumination optical system ( 4a ~ 4g) The exposure light irradiation amount is adjusted by, for example, measuring the exposure light irradiation amount of each projection area (Pa ~ Pg) on the substrate (W) with the irradiation amount measurement system (22), so that each irradiation at this time The amount is uniform, and after adjusting the irradiation amount of each illumination optical system (4a to 4g), it is performed based on the measurement result of the size measurement system (30). For example, the exposure method of the 3rd scope of the patent application or the exposure device of the 9th scope of the patent application uses the focus position adjustment device (58, 58a, 61, 61a) as the optical characteristics of the projection optical system (5a to 5g). , LC) while changing the focal position, the resolution of the projection optical system changes, and the size of the pattern image changes. Therefore, the majority of 8 formed on the substrate (W) can be adjusted. This paper size is applicable to China National Standard (CNS) A4 specifications. (210 X 297 public love) '" (Please read the notes on the back before filling in this page) Packing ---- Order ----- 473819 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs V. Invention (W) The size of each pattern in the projection area (Pa ~ Pg) will be described. In addition, if the exposure method of the patent application item 4 or the patent application of the exposure device of the patent item 10 is provided at a predetermined position on the light path of the illumination optical system (4a ~ 4g), a variable Since the opening optical component (70) can also change the resolution by changing the opening of the optical component (70), the size of the pattern can be adjusted. Or, if the exposure method of the patent application item 5 or the patent application of the exposure device item 11 is used as the optical characteristics of the projection optical system (5a ~ 5g), it can also be adjusted by using the number of openings (80) The size of the pattern image is changed by changing the number of each opening, so the size of the pattern to be formed can be adjusted. Furthermore, if the exposure method of the patent application range of item 6 or the patent application of the exposure device of item 12 is used as the optical characteristics of the illumination optical system (4a ~ 4g), the wavelength adjustment device (13) can also be used to change the illumination The wavelength of the exposure light of the optical system (4a ~ 4g), so the size of the pattern can be adjusted. [Embodiment of Invention] (Embodiment 1 of Embodiment) The first embodiment of the exposure method and exposure apparatus of the present invention will be described below with reference to the drawings. Fig. 1 is a schematic view showing a schematic configuration of an exposure apparatus of the present invention. Fig. 2 is a perspective view illustrating a bracket 9 holding a photomask M and a substrate W in Fig. 1. In FIGS. 1 and 2, the exposure device 1 includes a plurality of illumination optical systems 4 (4 a to 4 g), and illuminates the light beam (exposure light) from the light source 11 on the mask μ 9 --------- --- Packing -------- Order— (Please read the notes on the back before filling out this page) _ This paper size is applicable to China National Standard (CNS) A4 (210 X 297) Printed by the Intellectual Property Bureau employee consumer cooperative 473819 A7 B7 V. Description of the invention (7); The field diaphragm 8 is arranged in the illumination optical system 4 and the area of the opening S through which the light beam passes is adjusted to limit the mask M through the light beam. Illumination range · 'Most of the projection optical systems 5 (5a to 5g) are arranged corresponding to most of the illumination optical systems 4, and the pattern image of the exposed mask M is transferred onto the substrate W; and the control unit ( (Control system) 7 and adjust the exposure light irradiation amount of each illumination optical system 4. Furthermore, the exposure device 1 includes a size measurement system 30, and the pattern control unit 7 for measuring the pattern image size formed on the substrate and the position of each projection optical system 5 can independently adjust each illumination optical system based on the measurement result of the size measurement system 30 4a ~ 4g exposure light exposure. The substrate W is held by a substrate stage 9a provided on the lower stage side of the bracket 9, and the photomask M is held by a mask stage 9b provided on the upper stage side of the bracket 9. The substrate W and the photomask M are integrally held by the bracket 9. The illumination optical system 4 includes: a light source 11 formed by an ultra-high-pressure mercury lamp; a light source driving section (power source) Ha for driving the light source 11; an elliptical mirror 12 for condensing a light beam emitted from the light source 11; Mirror 12 Among the collected light beams, a wavelength filter (wavelength adjustment device) 13 that passes only the wavelength required for exposure; a fly-eye lens 15 that adjusts the light beam that passes through the wavelength filter 13 to a light beam with uniform illumination distribution ; And lens systems 14, 16, I7. At this time, the field of view light 8 is arranged between the lens system 16 and the lens system 17 which are incident by the fly-eye lens 15. The illumination optical systems 4 are arranged in a large number (7 in this embodiment, such as 4a to 4g, but in FIG. 1, only those corresponding to the lens system are described for convenience), and most of the illumination optical systems 4a to 4g The exposure light emitted by this paper is in accordance with China National Standard (CNS) A4 specification (210 X 297 public love) -------------------- 1 ------ --- (Please read the notes on the back before filling this page) 473819 A7 B7 V. Description of invention (g) is a small number of different fields (lighting areas) illuminated on the mask M, respectively. (Please read the notes on the back 5 before filling in this page) The field of view aperture 8, for example, is a rectangular opening S formed by combining a pair of blades curved into a flat L-shape with the optical axis of the beam perpendicularly crossing. These blades are configured to be moved by a driving mechanism (not shown) in a plane perpendicular to the optical axis. That is, the visual field aperture 8 can change the size of the opening S as the position of the blade changes, and allows the light beam (exposure light) transmitted through the opening S to be transmitted to the lens system 17 only through the light beam 15 (exposure light) passing through the opening S. This field of view 8 is provided in a large number corresponding to each of the illumination optical systems 4a to 4g. In the mask M held on the mask stage 9b, a pattern which must be transferred to the substrate W is formed. In addition, the field of illumination is limited by each field of view aperture 8, and the areas where the mask M is different are illuminated by the exposure light transmitted through each lens system 17 (illumination field). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In each of the optical paths of the illumination optical systems 4a to 4g, a half mirror 18 is provided between the fly-eye lens 15 and the lens system 16. This half mirror 18 allows a part of each light beam of the illumination optical systems 4a to 4g to pass through the lens system 19 and enter the detector 20. The detector 20 is provided in a majority (7 in this case) corresponding to each of the illumination optical systems 4a to 4g. Often, the beam intensity of each of the illumination optical systems 4a to 4g is independently detected, and each detection signal is transmitted to the control Department 7. That is, the exposure light exposure amount of each illumination optical system 4a to 4g (the exposure amount of each light source 11 provided in each illumination optical system 4a to 4g) can be detected independently by the detector 20, and the inspection The output signal is transmitted to the control section 7. A filter 41 is provided on the downstream side of the optical path of the lens system I4. As shown in Fig. 3, this filter 41 is formed in a curtain shape on the glass substrate 41a with Cr or the like, and the transmittance gradually changes in a linear manner in a range along the Y direction. In addition, the paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 473819 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (f) Filter connected to the wave filter 41 The driver driving unit 42 moves the filter 41 in the Y direction in accordance with an instruction from the control unit 7. The control section 7 'drives the filter driving section 42 based on the detection result of the detector 20 to move the filter 41 to adjust the light amount of each optical path. The projection optical system 5 (5a to 5g) is used to image the pattern image existing in the range of the mask M defined by the open DS on the substrate W, and expose the pattern image to a specific area of the substrate W, and corresponds to The illumination optical systems 4a to 4g are arranged. At this time, the projection optical systems 5a, 5c, 5e, and 5g and the projection optical systems 5b, 5d, and 5f are arranged in a matrix of two rows, and each of the projection optical systems 5a to 5g is emitted by the illumination optical systems 4a to 4g. Most of the exposure light after passing through the mask M is transmitted, and a pattern image formed on the mask M is projected onto the substrate W held by the substrate stage. That is, the exposure light transmitted through each of the projection optical systems 5a to 5g is a pattern of a projection image corresponding to the illumination area of the mask M on a different projection area on the substrate W. Each of the projection optical systems 5a to 5g, as shown in FIG. 4, includes: an image shifting mechanism 53 into which the exposure light transmitted through the mask M; two sets of reflective refractive optical systems 54, 55; a field of view aperture 56; and magnification adjustment Agency 57. The image shifting mechanism 53, for example, two pieces of parallel flat glass are rotated around the Z axis or the Z axis, respectively, to move the pattern image of the mask M in the X direction or the Y direction. The exposure light that has passed through the image shifting mechanism 53 is incident on the reflective optical system 54 of the first group. The reflection-refraction optical system 54 forms an intermediate image of the mask M, and includes a right-angle prism 58, a lens 59, and a concave mirror 60. _Connect the mobile device 58a at right angle 稜鏡 58, and make the right angle 稜鏡 12 by the mobile device 58a. The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) ----- -------------- Order— (Please read the precautions on the back before filling this page) Gift 丨 473819 Α7 ____ Β7 V. Description of the invention (,:), (Please read the back first (Notes for filling in this page again) 58 Rotate around the Z axis to rotate the pattern image of the mask μ. Furthermore, the right angle 稜鏡 58 can be moved in the entering / exiting direction (X direction) with respect to the optical path by the 稜鏡 moving device 58a in the figure. A field diaphragm 56 is arranged in the middle image of the pattern of the mask M. The field of view light beam 56 is used to set a projection area pa to pg on the substrate w (see FIG. 5). The exposure light passing through the field light beam 56 is incident on the second group of the reflection-refraction optical system 55. The retroreflective optical system 55 includes a right-angled lens 61, a lens 62, and a concave mirror 63 similarly to the retroreflective optical system 54. Furthermore, the right-angled 稜鏡 61 is also connected to the 稜鏡 moving device 61a, and can rotate freely around the Z axis, so that the pattern image of the mask M is rotated. Furthermore, the right angle 稜鏡 61 can be moved in the entrance / exit direction (X direction) with respect to the optical path by the 稜鏡 moving device 61a in the figure. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the exposure light emitted from the reflective optical system 55 is used to form a pattern image of the photomask M on the substrate W at an equal magnification. In the reflection-refraction optical system 55, the magnification adjusting mechanism 57 passes through the lens 62 and is provided in the optical path to the right angle 稜鏡 61. The magnification adjustment mechanism 57 is composed of, for example, three lenses, such as a plano-convex lens, a lenticular lens, and a plano-concave lens. The lenticular lens located between the plano-convex lens and the plano-concave lens is moved in the Z-axis direction to change the pattern of the mask M. Like the magnification. The magnification adjusting mechanism 57 may be reflected by the concave mirror 63 and provided in the optical path reaching the lens 62. A magnification adjustment mechanism 57 may be provided between the reflection-refractive optical system 55 and the substrate W. The photomask M and the holder W_9 held by the substrate W-body are set to be movable in the X direction in the figure. In this case, as shown in Fig. 2, the bracket 9 is set to apply the Chinese National Standard (CNS) A4 specification (210 X 297) " " " Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economy Printed 473819 A7 B7 V. Description of the Invention (1 丨) A drive source (not shown) can be moved along the X guide shaft 23. That is, the carriage is moved by moving the carriage 9 along the X guide shaft 23. Nine pairs of the illumination optical system 4 and the projection optical system 5 are relatively moved. At this time, each of the illumination optical systems 4a to 4g and each of the projection optical systems 5a to 5g is fixed by a fixed support portion (not shown). ^ Arranged in a matrix form Each of the projection optical systems 5a to 5g is arranged so that adjacent projection optical systems (for example, the projection optical systems 5a and 5b, 5b, and 5c) are displaced in a predetermined amount in the X direction. Therefore, as shown in FIG. Among the projection areas Pa to Pg on the substrate W formed by the exposure light of the projection optical systems 5a to 5g, the adjacent areas (for example, Pa and Pb, Pb and Pc) are projected in the X direction with a predetermined amount of displacement. This , The end of the adjacent projection area is configured to the Y direction with a given amount (for example, 5mm ) Overlap. That is, 'the majority of the above-mentioned projection optical systems 5a to 5g are corresponding to the configuration of each projection area Pa to Pg, and are displaced in the X direction by a predetermined amount, and are arranged to overlap in the Y direction. Moreover, most of the illumination optical systems 4a to The configuration of 4g is such that the illumination area of the mask Mi: is the same as that of the above-mentioned projection areas Pa ~ Pg, that is, corresponding to the projection optical systems 5a ~ 5g. In this case, each of the projection optical systems 5a ~ 5g is The equal magnification erect system. Secondly, the holder 9 holding the mask M and the substrate W is moved along the X guide axis 23, that is, the illumination optical system 4 and the projection optical system 5 are scanned in the X direction. And the pattern image formed on the photomask M is transferred to the photographic field EA on the substrate W. In the bracket 9, a part of the substrate table 9a on the side holding the substrate W is provided with a measurement corresponding to 14 of each illumination optical system 4a ~ 4g on this substrate W ------------ install -------- order --- (Please read the precautions on the back before filling this page ) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 473819 A7 B7 V. Description of the invention (/ X ) (Please read the precautions on the back before filling out this page) Illumination sensor (exposure measurement system) 22 for exposure light exposure at the position. Illumination sensor 22 has a Y direction on the bracket 9 The guide shaft 24 is provided at the same plane height as the substrate W. That is, the illuminance sensor 22 is configured to be movable to the carriage 9 (substrate stage 9a) by the illuminance sensor driving unit 21. The direction (X direction) moves perpendicularly to the direction (Y direction). The illuminance sensor 22 moves in the X direction of the bracket 9 and the illuminance sensor driving unit 21 before performing one or more exposures. Moving in the Y direction, scanning is performed under each of the projection areas pa to Pg corresponding to the projection optical systems 5a to 5g. Therefore, the intensity (illumination) of the illumination light on the exposed surface of the substrate W is detected by the illumination sensor 22 in a space of 2 degrees. The illuminance data detected by the illuminance sensor 22 is transmitted to the control unit 7. The line width measuring machine (dimension measuring system) 30 is used to measure the size of a pattern formed in each projection area Pa to Pg corresponding to each projection optical system 5a to 5g. In this case, the line width measuring machine 30 measures the line width of the pattern formed on the substrate W, and an optical or electron beam measuring machine such as a light wave interference measuring machine or a length measuring SEM can be used. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Here, the dimensions mentioned here refer to the dimensions of the line width and interval of the pattern, the position of the pattern, etc. along the direction of the W surface of the substrate. In this case, a hole-like pattern diameter is also included. The line width measuring machine 30 is used to measure the pattern line width of each projection area Pa ~: Pg on the substrate W after projecting and developing the pattern image of the mask M, and to perform development processing and Since the pattern line width of the substrate W held on the substrate stage 9 a is measured, it is provided near the holder 9. Secondly, the pattern line width of each of the projection areas Pa ~ Pg on the substrate detected by the line width measuring machine 30 is 15. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm). Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative 473819 A7 ---- B7 V. Description of the invention (4) The data (size data) is transmitted to the control section 7. The following describes the operation of transferring the pattern image of the photomask M onto the substrate W by the exposure device 1 having such a structure. Before the exposure, the illuminance sensor 22 is driven by the illuminance sensor driving unit 21 in the Y direction, and at the same time, the carriage 9 is driven in the X direction. Accordingly, the illuminance sensor 22 scans under each of the projection areas Pa to Pg corresponding to the projection optical systems 5a to 5g. At this time, the illuminance of the substrate w is detected by the illuminance sensor 22. The illumination detection signals of the projection areas Pa to Pg on the substrate W detected by the illumination sensor 22 are transmitted to the control unit 7. The control unit 7 detects and adjusts the exposure light exposure amount of each of the illumination optical systems 4a to 4g with each detector 20 based on the detection signal of the illuminance sensor 22 so as to make each projection corresponding to the projection optical system 5a to 5g The area pa ~ pg has uniform illumination. That is, before the exposure process is performed, the illuminance sensor 22 is used to set the illuminance of the exposure light in each projection area Pa to Pg to be uniform. Next, the mask M, that is, the substrate W is supplied to the mask stage 9b and the substrate stage 9a through a loader (not shown). The mask M and the substrate W supplied to the mask stage 9b and the substrate stage 9a are adjusted by an alignment system (not shown) with respect to the illumination optical system 4 and the projection optical system 5. After the alignment of the mask M and the substrate W is completed, the carriage 9 is driven along the X guide shaft 23. The photomask M and the substrate W are scanned integrally while being held by the carriage 9. On the other hand, the illumination optical systems 4a to 4g emit exposure light toward the mask M. These exposure lights pass through the scanned reticle M, and are respectively equipped with projection optical systems corresponding to each of the illumination optical systems 4a to 4g. 16 This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm)- ---------- ^ -------- ^ --------- (Please read the notes on the back before filling this page) 473819 A7 B7 V. Description of the invention ( , T) 5a to 5g, the pattern image of the mask M is imaged on a projection area Pa to Pg different from the substrate W scanned from the mask M. As a result, the pattern image formed on the photomask M is transferred to the substrate W. In this way, the substrate W is exposed once in a state where the illuminance of each projection area Pa to Pg is controlled to be uniform. In a state where the illuminance of each projection area Pa to Pg is uniform, the substrate W after the exposure processing is subjected to development processing. After the development process is completed, the substrate W is measured with a line width measuring machine 30 for the pattern line widths formed in each projection area Pa to Pg. The line width measuring machine 30 transmits the measured line width data to the control section 7. The control unit 7 adjusts the exposure light irradiation amount of each of the illumination optical systems 4a to 4g based on the measurement result of the line width measuring machine 30. The control unit 7 measures the pattern size of each projection area Pa to Pg formed on the substrate W in advance corresponding to each projection area Pa to Pg with a line width measuring machine 30, and adjusts each of the illumination optical systems 4a to 4g based on the measurement results. The exposure light irradiation amount makes the pattern line width of each projection area Pa ~ Pg reach the target 此时. At this time, the control unit 7 is based on the change amount of the exposure light irradiation amount and the line width change amount (size of the pattern image) obtained in advance. The amount of change in exposure) is adjusted by the exposure light irradiation amount of the illumination optical systems 4a to 4g. In this case, after the exposure light irradiation amount of the illumination optical system 4a to 4g is arbitrarily changed, the data of the line width change amount of the pattern image on the substrate W is mostly obtained in advance, and adjusted based on the majority of the data (data sheet) The exposure light irradiation amount of the illumination optical systems 4a to 4g is such that the measurement result of the line width measuring machine 30 is consistent with the target line (target line width). 17 (Please read the precautions on the back before filling out this page) Packing -------- Ordered by the Intellectual Property Bureau of the Ministry of Economy, Employees' Cooperatives Printed on this paper Standards applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 473819 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The relationship between the change in the amount of illumination of the illumination optical system 4 and the change in the line width of the pattern image of the substrate W is acceptable. It is set in advance according to the same result of the experiment of the line width change amount of the pattern image of the substrate W relative to the change amount of the illuminating optical system 4 according to the illumination optical system 4. Alternatively, the relationship between the change amount of the exposure light exposure amount of the illumination light system 4a to 4g and the line width change amount of the pattern image of the substrate W relative to the data table can be obtained in a relational formula, and According to this relational expression, the exposure light irradiation amounts of the illumination optical systems 4a to 4g are adjusted based on the measurement results of the line width measuring machine 30. That is, data on most conditions regarding the relationship between the amount of change in the irradiation amount and the amount of change in the line width are obtained, and the relational expression is obtained by adjusting the data. The control unit 7 adjusts and adjusts the exposure light exposure amount of the illumination optical system 4a to 4g according to the above-mentioned data table or relational expression so that the line width of the pattern image on the substrate W reaches the target line width. That is, according to the measurement result of the line width measuring machine 30 and the aforementioned data table or relational expression, the pattern line width of each projection area Pa ~ Pg reaches the target 値, specifically, the pattern line width of the projection area Pa ~ Pg is uniform, The detector 20 attached to the illumination optical systems 4a to 4g detects the exposure light exposure amount, and the control unit 7 adjusts the output of each illumination optical system 4a to 4g (that is, the power source 11a of the light source 11). Next, after the adjustment of the exposure light irradiation amount is completed, the substrate W is subjected to exposure processing again. In this way, since the pattern line width (size) formed on the substrate W is measured and the exposure light irradiation amount of each illumination optical system 4a to 4g is independently adjusted according to the measurement result, the pattern line width of each projection area Pa to Pg is uniform, Therefore, 18 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) ----------- Awt -------- Order ------- -(Please read the notes on the back before filling out this page) 473819 A7 _ B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (A) The pattern of most of the projection areas Pa ~ Pg formed on the substrate The line width can be reliably uniformized. That is, for example, even if the exposure light irradiation amount of each of the illumination optical systems 4a to 4g is set to be uniform, the characteristics of the lens systems starting with the projection optical system 5 are different, so that the line width formed on the substrate W may vary depending on each There may be a difference in the projection areas Pa to Pg. However, 'the pattern line width of each projection area Pa to Pg formed on the substrate W is directly measured by exposure and development processing, and the irradiation amount of each illumination optical system 4a to 4g is independently adjusted based on the measurement results. Even if there is a difference in characteristics of each lens system or each device starting from the projection optical system 5 or a difference in resist sensitivity, the pattern line width of each projection area Pa to Pg of the substrate W can be surely uniformized. Therefore, the productivity of the manufacturing substrate W can be improved. Next, the relationship between the change amount of the exposure light irradiation amount of the illumination optical system 4 and the line width change amount of the pattern image formed on the substrate W is obtained in advance in a relational formula or in a data table manner, and according to the relationship formula By adjusting the exposure light irradiation amount of the illumination optical systems 4a to 4g, the most appropriate exposure amount of the illumination optical systems 4a to 4g can be efficiently set. Also, the relational expression is obtained based on the adjustment of the data of the majority of the line width change amount that changes with the change amount of the irradiation amount. As an example, D = (a (E / E〇) + b) AE ... (1) Here, E: Exposure 19 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) --------- --- ^ -------- 1 --------- (Please read the notes on the back before filling out this page) 473819 Member of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by Consumer Cooperative A7 B7 V. Description of the invention (/ p E: change amount of irradiation amount D: line width (// m) D: change amount of line width (#m) E0: most appropriate irradiation amount a: coefficient obtained by adjustment b: For example, when the coefficient obtained by the adjustment is a = -3, b = 5, and E = E0, the change amount of the line width ΔE is 10%, and the change amount of the line width ΔD becomes 0 · 2. // m. Obtain the relational expression '(1)' in advance and change the irradiation amount with respect to the target line width change amount AD to easily and efficiently obtain the maximum of each illumination optical system 4a to 4g. Appropriate exposure. When measuring the line width of the substrate W with the line width measuring machine 30, The illuminance sensor 22 measures the amount of exposure light exposure to each projection area Pa to Pg of the substrate W in advance, and uniformizes the illuminance of each projection area Pa to pg in advance, thereby measuring the transmission line width. The line width measurement (dimension measurement) of the machine 30 can expose the substrate W at a uniform illuminance. Therefore, the line width measurement can be performed efficiently. That is, the projection areas Pa to Pg on the substrate W can be made in advance. In a state where the exposure light is uniformized, the pattern line width of each projection area Pa ~ Pg can be made uniform. Therefore, the line width measurement of each projection area Pa ~ Pg on the substrate W of the line width measuring machine 30 can achieve a relatively The processing time is short and efficient. Although it has been described that the signal line of the line width measuring machine 30 is connected to the exposure device 1, the operator can also measure 20 through a line width different from the exposure device 1 --- --------- Crack ---- (Please read the precautions on the back before filling this page) Order --------- This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) 473819 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 5 Description of the invention (p) The device measures the pattern size 'and inputs the pattern size to the exposure device 10, and the obtained pattern size can also indicate that the most appropriate irradiation amount is not in the control unit 7. It is formed in The pattern shape 'on the substrate W is not limited to those having a line width. For example, this exposure device 1' can also be applied to the production of contact holes. Although the contact holes formed on the substrate for a pattern of a liquid crystal display element must be formed on the substrate It has a uniform size "but" is manufactured by the exposure method and exposure device of the present embodiment, and even if the pattern shape is a hole shape, the pattern shapes of most projection areas can be made uniform. (Second Embodiment) Next, a second embodiment of an exposure method and an exposure apparatus according to the present invention will be described with reference to the drawings. Here, the same reference numerals are used for the same or equivalent components as those in the first embodiment, and the description is simplified or omitted. In the first embodiment, the size of each pattern corresponding to each projection area Pa to Pg formed on the substrate W is measured, and the exposure light exposure amount of each illumination optical system is performed based on the measurement result so that each size reaches the target. In the second embodiment, in order to achieve a target size of the pattern formed on the substrate W, among the optical characteristics of the projection optical system 5, the focal positions of the projection optical systems 5a to 5g are changed. The focal position adjustment device capable of changing the focal position of the projection optical system 5 (5a to 5g) is provided in the projection optical system 5 shown in FIG. 4 and can direct the right angle 稜鏡 58 (or 61) in the X direction in the figure Mobile device 58a (21 paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) ----------- installation -------- order- -------- (Please read the notes on the back before filling out this page) 473819 Printed by A7 B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Composition (J) or 61a). Furthermore, by moving the right angle 稜鏡 58 in the X direction by the 稜鏡 moving device 58a, the focal position of the projection optical system 5 is changed. By having both a right-angle 稜鏡 58 and a focus position adjusting device capable of making the right-angle 稜鏡 58 of the 稜鏡 moving device 58a, the focal point position of the projection optical system 5 is not consistent with the exposure processing surface of the substrate W The exposure light transmitted through the projection optical system 5 is brought into a defocused state on the exposure processing surface of the substrate W. Therefore, the line width of the pattern image formed on the substrate W becomes thicker. In addition, by performing the exposure processing in this defocused state, the pattern line width formed on the substrate W is made thicker than when the exposure processing is performed in a state where the focal position of the projection optical system 5 and the exposure processing surface of the substrate W coincide. Hereinafter, the operation of transferring the pattern image formed on the photomask to the substrate W by the exposure apparatus 1 having the above-mentioned configuration will be described. First, as in the first embodiment, before the exposure process is performed, the illuminance sensor 22 is used to set the illuminance of the exposure light in each projection area Pa to Pg to be uniform. Next, the mask M and the substrate W are placed on the mask stage 9b and the substrate stage 9a, respectively, and then the first exposure process is performed on the substrate. In a state where the illuminance of each projection area Pa to Pg is uniform, the development process is performed on the substrate W after the exposure processing. Next, the line width measuring machine 30 measures the pattern line width of each projection area Pa to Pg formed on the substrate W after the development process, and outputs the measured line width data to the control unit 7. The control unit 7 individually drives the moving units 58a (or 61a) of the projection optical systems 5a to 5g based on the measurement results of the line width measuring machine 30. Driven by the 稜鏡 moving device 58a (or 61a), the right-angle 稜鏡 58 (or 61) is moved in the X direction, respectively, and the focal positions of the projection optical systems 5a to 5g are individually changed. 22 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------------- IJ --------- (Please read the precautions on the back before filling this page) 473819 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (7 / C)) At this time, the control unit 7 according to the focus of the projection optical system 5 The relationship between the position change amount and the line width change amount (size change amount) of the pattern image formed at this time (data sheet, relational expression) drives the moving device 58a, and performs the focus position of the projection optical system 5a to 5g. Adjust 'to make the line width of the pattern image on the substrate W reach the target value. For example, if the pattern line width in a certain projection area is to be made thicker, the focal position of the exposure processing surface of the substrate W may be increased. Next, after the adjustment of the focal position of each of the projection optical systems 5a to 5§ is completed, the exposure process to the substrate W is performed again. In this way, the line width (size) of the pattern formed on the substrate w is measured, and the focal positions of the projection optical systems 5a to 5g are independently changed according to the measurement results, so that the line widths of the projection areas Pa to Pg are uniform. Therefore, The pattern line width of most of the projection areas Pa to Pg formed on the substrate W can be uniformly surely. At this time, for example, when the pattern line width on a substrate in one projection area measured by the line width measuring machine 30 is thinner than the pattern line width in another projection area, the projection optics corresponding to the projection area may be The focal position of the system 5 is shifted from the exposure processing surface of the substrate W, so that the line width of the pattern image on the appearance becomes thick, and thus the line width of the pattern formed on the substrate W becomes thick. Further, in this embodiment, the focus position adjusting device for changing the focus position of the projection optical system 5 is constituted by a 稜鏡 moving device 58a for moving the right angle 构成 constituting the projection optical system 5, but, for example, As shown in FIG. 6, the lens controller LC may be configured at a predetermined position on the optical path of the projection optical system 5. The lens controller LC, as shown in Figure 6, is a box located on the downstream side of the light path at right angle 稜鏡 61 and allowing exposure light to pass through. 23 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm). ) ------------------- Order ---- (Please read the notes on the back before filling this page)
47381B 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（A ) 體所構成，藉由變化以該箱體所形成之密閉空間之氣體種 類、壓力或溫度而調整折射率，可將投影光學系統5之焦 點位置變更至所欲之位置。此時，直角稜鏡58(61)未往X 方向移動。 或是，不以箱體構成透鏡控制器LC，亦可以例如圖7 所示，將多數(2個）之稜鏡LC1、LC2組合而構成。其次， 藉由使稜鏡LC1、LC2對曝光光之光路往垂直方向移動， 而變更投影光學系統5之焦點位置。 進而，亦可使焦點位置調整裝置’藉由具有相異之光 學特性(折射率）之多數之光學部件(光學裝置）；及可使這些 光學部件，對投影光學系統5光路上之既定位置可進出而 予以支持之支持機構而構成，並藉由在多數之光學部件之 中，將既定之光學部件配置於光路上’而變更投影光學系 統5之焦點位置。 (第3實施型態） 其次，參照圖面說明本發明之曝光方法及曝光裝置之 第3實施型態。此處’與則述之弟1、弟2貫施型悲问丰永 或同等之構成部份，使用相同之符號，該說明則予以簡化 或省略。 在第1實施型態，係計測與基板上各投影領域Pa〜pg 對應之圖案尺寸，根據該計測結果變更照明光學系統 4a〜4g之曝光光照射量，使各尺寸達到目標値之構成’在 第2實施型態，係變更投影光學系統5a〜5g之焦點位置之 2447381B Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Composition of the invention (A), the refractive index can be adjusted by changing the gas type, pressure or temperature of the enclosed space formed by the cabinet. The focal position of the projection optical system 5 is changed to a desired position. At this time, the right angle 稜鏡 58 (61) does not move in the X direction. Alternatively, the lens controller LC may not be constituted by a box, but may be formed by combining a plurality of (two) 稜鏡 LC1 and LC2 as shown in FIG. 7. Next, the focal positions of the projection optical system 5 are changed by moving the optical paths of the exposure light 稜鏡 LC1 and LC2 in the vertical direction. Furthermore, it is also possible to make the focus position adjustment device 'a plurality of optical components (optical devices) having different optical characteristics (refractive index); and enable these optical components to be used for a predetermined position on the optical path of the projection optical system 5 A support mechanism that supports entering and exiting is configured, and the focal position of the projection optical system 5 is changed by arranging a predetermined optical component on the optical path among most optical components. (Third Embodiment) Next, a third embodiment of the exposure method and the exposure apparatus of the present invention will be described with reference to the drawings. Here, the same symbols are used for the brothers and brothers 1 and 2 who consistently apply the type of sadness to Fengyong, and the same symbols are used, and the description is simplified or omitted. In the first embodiment, the pattern size corresponding to each of the projection areas Pa to pg on the substrate is measured, and the exposure light irradiation amount of the illumination optical system 4a to 4g is changed according to the measurement result, so that each size reaches the target frame. In the second embodiment, the focal position of the projection optical system 5a to 5g is changed by 24.
^紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公H -----------·裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 473819 A7 B7 五、發明說明（〆） 構成，在第3實施型態，係於照明光學系統4a〜4g之光路 上之既定位置，設置具有可使曝光光通過之可變開口之光 學部件，藉由變更該開口之大小而調整在基板贾上之圖案 像之線寬。 在本實施型態，如圖1所示，在照明光學系統 4a(4b〜4g)之中複眼透鏡15之光路下流側，設置具有可使 曝光光通過之可變開口之可變光圈（光學部件）7〇 ’藉由調 整該開口之大小，而調整形成於基板W上之圖案線寬。該 可變光圏70，係配置於由複眼透鏡15所見到之瞳面。其 次，藉由變化該開口之大小而變化光學系統之解像力，並 隨著該解像力之變化，而變化形成於基板W之圖案線寬(尺 寸）。 即，由於當使可變光圈70之開口變小則解像力降低， 因此，在基板W上之圖案像支線寬變粗，另一方面，由於 當使開口變大則解像力提高，因此，在基板W上之圖案像 之線寬變細。 在以具有上述構成之曝光裝置1進行曝光處理之場合 ，與上述第1、第2實施形態同樣，首先，在進行曝光處 理之前，使用照明度感測器22設定使各投影領域Pa〜Pg 之曝光光之照明度均一。其次，在將光罩Μ及基板W分別 載置於光罩台9b及基板台9a之後，進行對基板W之第1 次之曝光處理。其次，對該基板W進行顯像處理，並以線 寬計測機30計測形成於各投影領域pa〜Pg之圖案線寬。 控制部7根據線寬計測機30之計測結果，個別變更分別設 25 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · n i_l n· mmmmK §_1 at ammf ^ ^ · ohm a···· a··· ιι···ι 言 經濟部智慧財產局員工消費合作社印製 473819 A7 ___B7___ 五、發明說明（^) 於各照明光學系統4a〜4g之可變光圈70之開口大小。 (請先閱讀背面之注意事項再填寫本頁) 此時，控制部7，根據預先求得之可變光圏70之開口 大小之變化量與此時所形成之圖案像之線寬變化量（尺寸變 化量）之關係（資料表、關係式），個別進行可變光圏70之 各镅口之調整，使基板W之圖案像之線寬達到目標之線寬 。具體言之，分別調整設於各照明光學系統4a〜4g之可變 光圏70之開口大小，而使各投影領域Pa〜Pg之圖案線寬 一致。例如，欲使某一投影領域之圖案線寬變粗之場合’ 可將可變光圈7〇之開口變小。 其次，當結束配置於各照明光學系統4a〜4g之可變光 圈70之開口大小之調整後，再度對基板W進行曝光處理 〇 經濟部智慧財產局員工消費合作社印製 如以上所述，亦可藉由個別調整設於各照明光學系統 4a〜4g之各光路上之既定位置之可變光圈70之開口大小， 而可調整形成於基板W之線寬。此時，例如當藉由線寬計 測機30，測得某一投影領域之基板W之線寬比另一投影 領域之線寬更細時，可藉由使對應於該投影領域之照明光 學系統4之可變光圈7〇之開口變小，使圖案像之線寬變粗 ，因而可使形成於基板W之線寬變粗。另一方面，在欲使 圖案線寬變細之場合，可將開口變大。 又，由於藉由使可變光圈70之開口變小，可降低基板 W上之曝光光之照明度，爲獲得使開口之大小變化前之相 同照明度，可根據偵測器20之檢出結果，提升光源驅動部 11a之輸出，或以濾波器驅動部42驅動濾波器41，而提高 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) 473819 A7 B7 五、發明說明（Λ ) 照明度。 又，在本實施形態，除設置可使開口變化之可變光圈 70之外，亦可設置具有相異大小開口之多數之光圏’當欲 獲得既定之線寬時，可將具有既定開口之光圏配置於照明 光學系統內之構成亦可。又，亦可藉由使用輪帶光圏或變 形光圏作爲可變光圈70之開口 ’而變化投影光學系統之解 像力。 (第4實施形態） 其次，參照圖面說明本發明之曝光方法及曝光裝置之 第4實施型態。此處，與前述之第1〜第3實施型態同樣或 同等之構成部份，使用相同之符號，該說明則予以簡化或 省略。 在第4實施型態，爲使形成於基板W之圖案尺寸達到 目標値，在投影光學系統5之光學特性之中，進行投影光 學系統5a〜5g之各開口數之變更。對於變更投影光學系統 5之開口數，如圖8所示，於投影光學系統5 a (5b〜5g)e 中，在反射折射型光學系統54之直角稜鏡58與凹面鏡60 之間，設置具有可使曝光光通過之可變開口之可變光圈（開 口數調整裝置）80，藉由調整該開口數之大小而進行開口數 之變更。可變光圈80係設於由投影光學系統5之像面所見 之瞳面位置，藉由變化開口數而變化投影光學系統5之開 口數。 藉由變化投影光學系統5之開口數而變化解像力，並 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 訂—-----. 經濟部智慧財產局員工消費合作社印製 473819 A7 B7 五、發明說明（/^) 隨著此解像力之變化，而使形成於基板W之圖案線寬（尺寸 )變化。即，由於當可變光圈80之開口變小則降低解像力 ，因此，使形成於基板W上之圖案像之線寬變粗，另一方 面，由於當使開口變大則提高解像力，因此，使形成於基 板W上之圖案像之線寬變細。 在以具有上述構成之曝光裝置1將光罩Μ之圖案像轉 印於基板W之場合，與上述第1〜第3實施形態同樣，首先 ，在進行曝光處理之前，使用照明度感測器22設定使各投 影領域Pa〜Pg之曝光光之照明度均一。其次，在將光罩Μ 及基板W分別載置於光罩台9b及基板台9a之後，進行對 基板W之第1次之曝光處理。其次，對該基板W進行顯像 處理，並以線寬計測機30計測形成於各投影領域Pa〜Pg 之圖案線寬。控制部7根據線寬計測機30之計測結果，個 別變更分別設於各投影光學系統5a〜5g之可變光圏80之開 口大小。 此時，控制部7，根據預先求得之可變光圈80之開口 大小之變化量與此時所形成之圖案像之線寬變化量（尺寸變 化量）之關係（資料表、關係式），個別進行可變光圏80之 各開口之調整’使基板W之圖案像之線寬達到目標之線寬 。具體言之’分別調整設於各投影光學系統5a〜5g之可變 光圈80之開口大小，而使各投影領域Pa〜Pg之圖案線寬 一致。例如，欲使某一投影領域之圖案線寬變粗之場合， 可將可變光圈80之開口變小。 其次，當結束配置於各投影光學系統5a〜5g之可變光 28 ί紙張尺度適g中國國家標準(CNS)A4規格（210 X 297公釐) ------------«裝 (請先閱讀背面之注意事項再填寫本頁) 訂---------線 經濟部智慧財產局員工消費合作社印製 473819 A7 B7 五、發明說明ο) 圈80之開口大小之調整後，再度對基板W進行曝光處理 〇 如以上所述，亦可藉由個別調整設於各投影光學系統 5a〜5g之各光路上之既定位置之可變光圏80之開口大小， 而可調整形成於基板W之線寬。此時，例如當藉由線寬計 測機30，測得某一投影領域之基板W之線寬比另一投影 領域之線寬更細時，可藉由使對應於該投影領域之投影光 學系統5之可變光圈80之開口變小，使圖案像之線寬變粗 ，因而可使形成於基板W之線寬變粗。另一方面，在欲使 圖案線寬變細之場合，可將開口變大。 又，在本實施形態，由於藉由使可變光圏80之開口變 小，可降低基板W上之曝光光之照明度，爲獲得使開口之 大小變化前之相同照明度，可根據偵測器20之檢出結果， 提升光源驅動部Ha之輸出，或以濾波器驅動部42驅動濾 波器41，而提高照明度。 進而，在本實施形態，除設置可使開口變化之可變光 圈80之外，亦可設置具有相異大小開口之多數之光圏，當 欲獲得既定之線寬時，可將具有既定開口之光圈配置於投 影光學系統內之構成亦可。 在本實施形態，雖然可變光圈80係設於反射折射型光 學系統54之構成，但可變光圈80亦可設於由投影光學系 統5之像面側所見之瞳面，在反射折射型光學系統55之直 角稜鏡61與凹面鏡63之間。 29 (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂- - ------- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473819 經濟部智慧財產局員工消費合作社印制衣 A7 B7 五、發明說明) (第5實施形態） 其次’參照圖面說明本發明之曝光方法及曝光裝置之 第5實施型態。此處，與前述之第2〜第4實施型態同樣或 同等之構成部份，使用相同之符號，該說明則予以簡化或 省略。 在本貫施形態’爲使形成於基板W之圖案尺寸達到目 標値，而進行曝光光之波長變更。對於曝光光之波長變更 ，如圖1所示，藉由調整設於照明光學系統4&(仆〜4§)之波 長濾波器(波長調整裝置）13，而進行曝光光之波長變更。 藉由變化曝光光之波長而變化解像力，並隨著此解像 力之變化，而使形成於基板W之圖案線寬（尺寸）變化。即 ，由於當曝光光之波長變長則降低解像力，因此，使形成 於基板W上之圖案像之線寬變粗，另一方面，由於當使波 長變短則提高解像力，因此，使形成於基板贾上之圖案像 之線寬變細。 在以具有上述構成之曝光裝置1進行曝光處理之場合 ，與上述第1〜第4實施形態同樣，首先，在進行曝光處理 之則’使用照明度感測器22設定使各投影領域Pa〜Pg之 曝光光之照明度均一。其次，在將光罩Μ及基板W分別載 置於光罩台9b及基板台9a之後，進行對基板W之第1次 之曝光處理。其次，對該基板W進行顯像處理，並以線寬 計測機30計測形成於各投影領域pa〜pg之圖案線寬。控 制部7根據線寬計測機30之計測結果，分別調整各照明光 學系統4a〜4g之波長濾波器13，並個別變更各照明光學系 30 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公^7 --------^ · 111-----. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制衣 473819 A7 ___ B7 五、發明說明（rS ) 統4a〜4g之曝光光之波長。 此時，控制部7，根據預先求得之曝光光之波長變化 量與此時所形成之圖案像之線寬變化量（尺寸變化量）之關 係(資料表、關係式），進行波長濾波器13之調整，使基板 W之圖案像之線寬達到目標之線寬。具體言之，分別調整 設於各照明光學系統4a〜4g之波長濾波器13，而使具有所 欲波長之曝光光分別由各照明光學系統4a〜4g射出。例如 ，當曝光光爲g線、h線、i線之場合，欲使某一投影領域 之圖案線寬變粗時，可藉由增加最長波長之g線成份(或減 少最短波長之i線成份），而使圖案線寬變粗。 其次，在結束設於各照明光學系統4a〜4g之波長濾波 器13之調整後，再度對基板W進行曝光處理。 如以上所述，亦可藉由個別調整設於各照明光學系統 4a〜4g之波長濾波器13，並且分別變更由各照明光學系統 4a〜4g所射出之曝光光之波長，而可調整形成於基板W之 線寬。此時，例如當藉由線寬計測機30，測得某一投影領 域之基板W之線寬比另一投影領域之線寬更細時，可藉由 增加曝光光之長波長成份，使圖案像之線寬變粗，因而可 使形成於基板W之線寬變粗。另一方面，在欲使圖案線寬 變細之場合，可增加曝光光之短波長成份。 又，在本實施形態，由於藉由增加曝光光之長波長成 份，可降低基板W上之曝光光之照明度，爲獲得曝光光之 波長變化前之相同照明度，可根據偵測器20之檢出結果’ 增加光源驅動部Ha之輸出，或以濾波器驅動部42驅動濾 31 ------------裝--------訂--------- (請先閱讀背面之注咅？事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 473819 A7 ------ B7 五、發明說明（) 波器41，而提高照明度。 又，在上述第1〜第5實施形態’雖係藉由在進行曝光 處理之後進行顯像處理，使圖案實際形成於基板W，計測 該圖案之尺寸，並根據該計測結果進行曝光光照射量之調 整或光學系統之光學特性之變更，而使圖案之線寬均一之 構成，但，亦可不必計測時實際所形成之圖案線寬（尺寸) ’例如，亦可以C C D等檢出裝置檢出投影領域之圖案像 ’並根據該檢出結果，而變更光學系統之光學特性。在此 場合，由於進行顯像處理，實際形成圖案，不必計測尺寸 ’而可檢出該圖案像之狀態（解像力之變化狀態），因此， 可將圖案像之狀態於任意之時間間隔或既定之時間予以減 出。其次，根據該檢出結果，可每次進行該圖案像之狀態 〇 作爲本實施形態之曝光裝置，亦可適用使光罩Μ及基 板W靜止之狀態下將光罩Μ之圖案曝光，並使基板W依序 分段移動之分段重複(step and repeat)型之曝光裝置。 又，在圖1，雖表示對多數之照明光學系統4a〜4g — 對一之關係，但，亦可將光源11之光束以光纖維等予以分 開，並分別將其分配至多數之照明光學系統4a〜4g。又， 亦可將光源11設置爲多數，並將光束混合分配。此時，所 照射之曝光光照射量，係藉由將ND濾波器等所透過之光 量予以變化之濾波器插入光路中，以調整所欲之照射量， 並控制各投影領域Pa〜Pg之曝光光照射量。 又，作爲本實施形態之曝光裝置，不使用投影光學系 32 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） "~" -----------裳--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 473819 經濟部智慧財產局員工消費合作钍印製 A7 B7 五、發明說明（々°) 統，而將光罩與基板密接，將光罩之圖案予以曝光之近接 (proximity)曝光裝置亦可適用。 曝光裝置之用途，其未限於將液晶顯示元件圖案曝光 於角形玻璃基板之液晶用曝光裝置，例如，亦可適用將電 路圖案曝光於半導體晶圓之半導體製造用曝光裝置，或用 以製造薄膜磁頭之曝光裝置亦可廣泛適用。 本實施形態之曝光裝置之光源，不僅可使用g線 (436nm)、h 線（405nm)、i 線（365nm)、KrF 準分子雷射 (248nm)、ArF 準分子雷射（l93nm)、F2 雷射（157nm)，亦可 使用X線或電子線等荷電粒子線。例如，在使用電子線之 場合，可使用熱電子放射型之六硼化鑭、鉅作爲電子槍。 進而’在使用電子線之場合，可使用光罩之構成，或不使 用光罩而直接將圖案形成於基板上之構成亦可。 投影光學系統之倍率不僅可使用等倍系統，亦可使用 縮小系統或放大系統。 作爲投影光學系統，在使用準分子雷射等遠紫外線之 場合’可使用石英或營石作爲矽材等遠紫外線通過之材料 ’而在使用F2雷射或X線之場合，可使用反射折射系統或 折射系統之光學系統，又，在使用電子線之場合，可使用 由電子透鏡及偏向器所形成之電子光學系統作爲光學系統 。又，電子線所通過之光路較佳爲真空狀態。 在基板台9a或光罩台9b使用線性馬達之場合，可使 用空氣軸承之空氣浮上型，或是使用洛倫茲(L〇rentZ)力或 反作用力之磁氣浮上型亦可。又，工作台可使用沿導引部 33 2^7^ 釐） ------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 473819 A7 B7 五、發明說明（小） 件移動型或未設導引部件之無導引部件型亦可。 在使用平面馬達作爲工作台之驅動裝置之場合，可將 磁石元件或電機子元件任何一方連接於工作台，而將磁石 元件或電機子元件之另一方設於工作台之移動面側（台座) 亦可。 由基板台9a之移動所產生之反作用力，如日本專利特 開平8-166475號公報所揭示，可使用框體部件而機械性地 釋放於床（大地）。本發明亦可適用具有如此構造之曝光裝 置。 由光罩台9b之移動所產生之反作用力，如日本專利特 開平8-330224公報所揭示，可使用框體部件而機械性地釋 放於床（大地）。本發明亦可適用具有如此構造之曝光裝置 〇 如以上所述，本案實施例之曝光裝置，係可將包含申 請專利範圍所揭示之各構成部件之各種副系統，保持既定 之機械的精確度、電氣的精確度、光學的精確度而加以組 立製造。爲保持各種精確度，在此組立前後，對各種光學 系統進行達成光學的精確度之調整，對各種機械系統進行 達成機械的精確度之調整，對各種電氣系統進行達成電氣 的精確度之調整。由各種副系統至曝光裝置之組立工程， 係包含各種副系統相互之機械的連接、電氣電路的配線連 接、氣壓回路之配管連接等。在由各種副系統至曝光裝置 之組立工程之前，包含各副系統個別之組立工程。在對各 種副系統之曝光裝置之組立工程結束後，進行綜合調整， 34 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝--------訂---------線· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 473819 A7 -------B7 五、發明說明（π) 以確保曝光裝置全體之各種精確度。又，曝光裝置之製造 ，較佳係於溫度及潔淨度等受到管理之無塵室進行。 半導體裝置，如圖9所示，係經由進行裝置之機能、 性能設計之步驟201 ;根據該設計步驟而製作光罩之步驟 ，202 ;製造由裝置之基材所形成之基板（晶圓、玻璃基板）之 步驟203 ;藉由前述實施例之曝光裝置將光罩之圖案曝光 於基板之基板處理步驟2〇4 ;裝置組立步驟(包含切割工程 、接線工程、封裝工程)205 ;及檢查步驟206而製造。 〔發明效果〕 本發明之曝光方法及曝光裝置具有以下之效果。 依申請專利範圍第1項之曝光方法及申請專利範圍第 7項之曝光裝置’係以尺寸計測系統計測基板上各投影領 域之圖案尺寸，而各照明光學系統之曝光光照射量及光學 系統之光學特性則根據該尺寸計測系統計之計測結果分別 予以調整。如此，由於各照明光學系統之曝光光照射量及 光學系統之光學特性，係根據形成於基板上各投影領域之 圖案尺寸之計測結果而調整，因此，例如即使在各光學系 統之特性相異之場合，亦可將其補正，而可使形成於基板 之多數之投影領域之圖案尺寸一致。因此，可提高製造基 板之產能。 依申請專利範圍第2項之曝光方法，預先求得曝光光 照射量之變化量與圖案像之尺寸變化量之關係，並根據該 關係進行照明光學系統之曝光光照射量之調整，因此可有 35 本^張尺度適用中國國家標準（CNS)A4規格（21〇\ 297公釐） ' -----------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 473819 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（θ) 效率地求得照明光學系統最適當之曝光量，同時，可有效 率地使形成於基板上多數之投影領域之圖案尺寸一致。 依申請專利範圍第8項之曝光裝置，設置用以計測對 應於基板上各投影光學系統之位置之曝光光照射量之照身寸 量計測系統，並根據該照射量計測系統之計測結果，使控 制系統可調整照明光學系統之曝光光照射量，而各照明光 學系統之曝光光照射量之調整，例如係以照射量計測系統 計測基板上各投影領域之曝光光照射量，在調整各照明光 學系統之照射量使此時之各照射量均一之後，根據尺寸計 測系統之計測結果而進行。因此，可有效率地使基板上之 各投影領域之圖案形狀均一化。 依申請專利範圍第3項之曝光方法及申請專利範圍第 9項之曝光裝置，由於作爲投影光學系統之光學特性，藉 由變更各焦點位置而變化投影光學系統之解像力，使圖案 像之尺寸變化，因此，可使形成於基板上之多數之投影領 域之圖案尺寸均一。 依申請專利範圍第4項之曝光方法及申請專利範圍第 10項之曝光裝置，由於在照明光學系統之光路上之既定 位置，設置具有可使曝光光通過之可變開口之光學部件， 藉由變更該光學部件之開口而變化投影光學系統之解像力 ，使圖案像之尺寸變化，因此，可使形成於基板上之多數 之投影領域之圖案尺寸均一。 依申請專利範圍第5項之曝光方法及申請專利範圍第 11項之曝光裝置，作爲投影光學系統之光學特性，由於 36 -----------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473819 Α7 Β7 五、發明說明（λψ) 藉由變更各開口數而變化投影光學系統之解像力，使圖案 像之尺寸變化，因此，可使所形成之圖案尺寸均一。 (請先閱讀背面之注意事項再填寫本頁) 依申請專利範圍第6項之曝光方法及申請專利範圍第 12項之曝光裝置，作爲照明光學系統之光學特性，由於 藉由變更照明光學系統之曝光光之波長而變化投影光學系 統之解像力，使圖案像之尺寸變化，因此，可使所形成之 圖案尺寸均一。 〔圖案之簡單說明〕 〔圖1〕係表示本發明之曝光裝置之一實施型態之構 成圖。 〔圖2〕係表示本發明之曝光裝置之一實施型態之立 體圖。 ^ 〔圖3〕係說明濾波器之平面圖。 〔圖4〕係說明投影光學系統之槪略構成圖。 〔圖5〕係說明基板上之投影領域之圖。 〔圖6〕係說明本發明之曝光裝置之第2實施型態中 焦點位置調整裝置之圖。 經濟部智慧財產局員工消費合作社印製 〔圖7〕係說明焦點位置調整裝置之另一實施型態之 圖。 〔圖8〕係說明本發明之曝光裝置之第3實施型態中 開口數調整裝置之圖。 〔圖9〕係表示半導體裝置之製造工程之一例之流程 圖。 37 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473819 A7 ___B7 五、發明說明（^/) 〔符號說明〕 經濟部智慧財產局員工.消費合作社印製 1 曝光裝置 4(4a〜4g) 照明光學系統 5(5a〜5g) 投影光學系統 7 控制部(控制系統） 11 光源 13 波長濾波器(波長調整裝置） 22 照明度感測器(照射量計測系統） 30 線寬計測機(尺寸計測系統） 58、61 直角稜鏡(焦點位置調整裝置） 58a、61a 稜鏡移動裝置(焦點位置調整裝置) LC 透鏡控制器(焦點位置調整裝置） 70 可變光圈(光學部件） 80 可變光圈（開口數調整裝置） Pa 〜Pg 投影領域 M 光罩 W 基板 8 3 (請先閱讀背面之注意事項再填寫本頁) ---------訂--------- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）^ The paper size is applicable to China National Standard (CNS) A4 (210 x 297 male H ----------- · installation -------- order --------- ( (Please read the precautions on the back before filling this page) 473819 A7 B7 5. Description of the invention (〆) The structure, in the third embodiment, is located at a predetermined position on the light path of the illumination optical system 4a ~ 4g. The optical member of the variable opening through which the exposure light passes, adjusts the line width of the pattern image on the substrate by changing the size of the opening. In this embodiment, as shown in FIG. 1, the illumination optical system 4a (4b ~ 4g) On the downstream side of the optical path of the fly-eye lens 15, a variable aperture (optical member) 70 ′ having a variable opening through which the exposure light can pass is set to be formed on the substrate W by adjusting the size of the opening The pattern line width. The variable light beam 70 is disposed on the pupil surface seen by the fly-eye lens 15. Secondly, the resolution of the optical system is changed by changing the size of the opening, and as the resolution changes, The pattern line width (size) formed on the substrate W is changed. That is, when the opening of the variable aperture 70 is changed The resolution is lowered, so that the width of the branch line of the pattern image on the substrate W becomes thicker. On the other hand, the resolution of the pattern image increases on the substrate W as the opening becomes larger. Therefore, the line width of the pattern image on the substrate W becomes narrower. When the exposure apparatus 1 configured as described above performs exposure processing, as in the first and second embodiments described above, first, before performing the exposure processing, the illuminance sensor 22 is used to set the exposure light intensity of each projection area Pa to Pg. The illuminance is uniform. Second, after the photomask M and the substrate W are placed on the photomask table 9b and the substrate table 9a, respectively, the first exposure processing for the substrate W is performed. Next, the substrate W is subjected to development processing. The line width measuring machine 30 measures the line width of the pattern formed in each projection area pa ~ Pg. The control section 7 individually changes and sets 25 paper sizes to the Chinese National Standard (CNS) based on the measurement results of the line width measuring machine 30. A4 specification (210 X 297 mm) (Please read the notes on the back before filling this page) · n i_l n · mmmmK §_1 at ammf ^ ^ · ohm a ··· a ··· ιι ··· ι Statement of Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the cooperative 473819 A7 ___B7___ 5. Description of the invention (^) The opening size of the variable aperture 70 in each of the lighting optical systems 4a ~ 4g. (Please read the precautions on the back before filling this page) At this time, the control section 7, According to the relationship between the amount of change in the opening size of the variable light 70 obtained in advance and the line width change (size change) of the pattern image formed at this time (data table, relational expression), variable light is performed individually. The adjustment of each opening of 70 makes the line width of the pattern image of the substrate W reach the target line width. Specifically, the opening size of the variable light opening 70 provided in each of the illumination optical systems 4a to 4g is adjusted so that The pattern line widths of the projection areas Pa to Pg are the same. For example, if the line width of a pattern in a certain projection area is to be thickened ', the opening of the variable aperture 70 may be made smaller. Secondly, after the adjustment of the opening size of the variable aperture 70 arranged in each of the illumination optical systems 4a to 4g is completed, the substrate W is exposed again. The printing is performed by the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as described above. The line width formed on the substrate W can be adjusted by individually adjusting the opening size of the variable aperture 70 provided at a predetermined position on each optical path of each of the illumination optical systems 4a to 4g. At this time, for example, when the line width of the substrate W in a certain projection area is measured to be thinner than the line width of another projection area by the line width measuring machine 30, the illumination optical system corresponding to the projection area may be made. The opening of the variable aperture 70 of 4 becomes smaller, making the line width of the pattern image thicker, so that the line width formed on the substrate W can be made thicker. On the other hand, when it is desired to reduce the pattern line width, the opening may be made larger. In addition, since the opening of the variable aperture 70 is made smaller, the illuminance of the exposure light on the substrate W can be reduced. In order to obtain the same illuminance before the size of the opening is changed, the detection result of the detector 20 can be used. Increase the output of the light source drive section 11a, or drive the filter 41 with the filter drive section 42, and increase 26. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 473819 A7 B7 V. Description of the invention (Λ) illumination. In addition, in this embodiment, in addition to the variable aperture 70 capable of changing the opening, a plurality of light beams having openings of different sizes can also be provided. When a predetermined line width is to be obtained, a light beam having a predetermined opening can be provided. The configuration in which the light beam is arranged in the illumination optical system is also possible. In addition, the resolution of the projection optical system can be changed by using a pulley light beam or a deformed light beam as the opening of the variable aperture 70 '. (Fourth embodiment) Next, a fourth embodiment of the exposure method and exposure apparatus of the present invention will be described with reference to the drawings. Here, the same reference numerals are used for the same or equivalent components as in the aforementioned first to third embodiments, and the description is simplified or omitted. In the fourth embodiment, the number of openings of the projection optical systems 5a to 5g is changed among the optical characteristics of the projection optical system 5 so that the pattern size formed on the substrate W reaches the target size. To change the number of openings of the projection optical system 5, as shown in FIG. 8, in the projection optical system 5a (5b to 5g) e, between the right angle 稜鏡 58 of the reflective optical system 54 and the concave mirror 60, The variable aperture (opening number adjusting device) 80 of the variable opening through which the exposure light can pass, changes the number of openings by adjusting the size of the opening number. The variable aperture 80 is provided at the pupil plane position seen from the image plane of the projection optical system 5, and the number of openings of the projection optical system 5 is changed by changing the number of openings. The resolution is changed by changing the number of openings of the projection optical system 5, and 27 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Binding — -----. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 473819 A7 B7 V. Description of the Invention (/ ^) As the resolution changes, the line width (size) of the pattern formed on the substrate W changes. That is, as the opening of the variable aperture 80 becomes smaller, the resolution is reduced. Therefore, the line width of the pattern image formed on the substrate W is made thicker. On the other hand, when the opening is made larger, the resolution is increased. The line width of the pattern image formed on the substrate W becomes thinner. When the pattern image of the photomask M is transferred to the substrate W by the exposure device 1 having the above-mentioned configuration, as in the first to third embodiments described above, first, the illumination sensor 22 is used before performing the exposure process. It is set to make the illuminance of the exposure light of each projection area Pa to Pg uniform. Next, the photomask M and the substrate W are placed on the photomask table 9b and the substrate table 9a, respectively, and then the first exposure processing for the substrate W is performed. Next, the substrate W is subjected to development processing, and the line width of the pattern formed in each projection area Pa to Pg is measured by a line width measuring machine 30. The control unit 7 individually changes the opening sizes of the variable light beams 80 provided in the respective projection optical systems 5a to 5g based on the measurement results of the line width measuring machine 30. At this time, the control unit 7 is based on the relationship between the amount of change in the opening size of the variable aperture 80 obtained in advance and the line width change amount (size change amount) of the pattern image formed at this time (data table, relational expression), The adjustment of each opening of the variable light unit 80 is performed individually so that the line width of the pattern image of the substrate W reaches the target line width. Specifically, the opening size of the variable aperture 80 provided in each of the projection optical systems 5a to 5g is adjusted to make the pattern line widths of the projection areas Pa to Pg uniform. For example, if the line width of a pattern in a certain projection area is to be made thick, the opening of the variable aperture 80 may be made smaller. Secondly, when the variable light 28 arranged in each of the projection optical systems 5a to 5g is finished, the paper size is suitable for the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ «Installation (please read the precautions on the back before filling this page) Order --------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 473819 A7 B7 V. Description of the invention ο) The size of the opening of circle 80 After the adjustment, the substrate W is exposed again. As described above, the opening size of the variable light beam 80 provided at a predetermined position on each optical path of each of the projection optical systems 5a to 5g can also be adjusted individually, and The line width formed on the substrate W can be adjusted. At this time, for example, when the line width of the substrate W in a certain projection area is measured to be thinner than the line width of another projection area by the line width measuring machine 30, a projection optical system corresponding to the projection area may be used. The opening of the variable aperture 80 of 5 becomes smaller, making the line width of the pattern image thicker, so that the line width formed on the substrate W can be made thicker. On the other hand, when it is desired to reduce the pattern line width, the opening may be made larger. In addition, in this embodiment, since the opening of the variable light beam 80 is made smaller, the illuminance of the exposure light on the substrate W can be reduced. In order to obtain the same illuminance before the size of the opening is changed, it can be detected based on the detection. The detection result of the device 20 improves the output of the light source driving section Ha, or drives the filter 41 with the filter driving section 42 to increase the illumination. Furthermore, in this embodiment, in addition to the variable aperture 80 that can change the opening, a plurality of light beams having openings of different sizes can also be provided. When a predetermined line width is to be obtained, a light having a predetermined opening can be provided. A configuration in which the diaphragm is arranged in the projection optical system may be used. In this embodiment, although the variable aperture 80 is provided in the reflection-refractive optical system 54, the variable aperture 80 may be provided on the pupil surface seen from the image surface side of the projection optical system 5. Between the right angle 稜鏡 61 of the system 55 and the concave mirror 63. 29 (Please read the precautions on the back before filling out this page) Binding ---- Order------------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 473819 Printed clothing A7 B7 of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention) (Fifth embodiment) Next, the exposure method and exposure device of the present invention will be described with reference to the fifth drawing. Implementation type. Here, the same reference numerals are used for the same or equivalent components as those in the second to fourth embodiments, and the description will be simplified or omitted. In this embodiment, the wavelength of the exposure light is changed so that the size of the pattern formed on the substrate W reaches the target value. As for the wavelength change of the exposure light, as shown in FIG. 1, the wavelength of the exposure light is changed by adjusting a wavelength filter (wavelength adjustment device) 13 provided in the illumination optical system 4 & The resolution is changed by changing the wavelength of the exposure light, and the line width (size) of the pattern formed on the substrate W is changed in accordance with the change in the resolution. That is, as the wavelength of the exposure light becomes longer, the resolution is reduced. Therefore, the line width of the pattern image formed on the substrate W is made thicker. On the other hand, as the wavelength is made shorter, the resolution is increased. The line width of the pattern image on the substrate is thinner. When the exposure processing is performed by the exposure apparatus 1 having the above-mentioned configuration, as in the first to fourth embodiments described above, first, when performing the exposure processing, 'the illumination sensor 22 is used to set each projection area Pa to Pg. The exposure light has uniform illumination. Next, the photomask M and the substrate W are placed on the photomask table 9b and the substrate table 9a, respectively, and then the first exposure processing for the substrate W is performed. Next, the substrate W is subjected to development processing, and the line width of the pattern formed in each projection area pa to pg is measured by a line width measuring machine 30. The control unit 7 adjusts the wavelength filters 13 of each of the illumination optical systems 4a to 4g according to the measurement results of the line width measuring machine 30, and individually changes each of the illumination optical systems 30. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public ^ 7 -------- ^ · 111 -----. (Please read the precautions on the back before filling out this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 473819 A7 ___ B7 V. Description of the invention (rS) The wavelength of the exposure light of the system 4a ~ 4g. At this time, the control unit 7 is based on the amount of change in the wavelength of the exposure light obtained in advance and the line width change (size of the pattern image formed at this time) The relationship between the amount of change) (data sheet, relational expression) is adjusted by the wavelength filter 13 so that the line width of the pattern image of the substrate W reaches the target line width. Specifically, the adjustment is provided for each of the illumination optical systems 4a ~ 4g wavelength filter 13 so that the exposure light having a desired wavelength is emitted by each of the illumination optical systems 4a to 4g. For example, when the exposure light is g-line, h-line, or i-line, a projection area is desired When the pattern line width becomes thicker, you can increase the longest wave by The long g-line component (or reduce the i-line component of the shortest wavelength) makes the pattern line width thicker. Second, after finishing the adjustment of the wavelength filter 13 provided in each of the illumination optical systems 4a to 4g, the substrate W is again adjusted. As described above, the wavelength filter 13 provided in each of the illumination optical systems 4a to 4g can be adjusted individually, and the wavelength of the exposure light emitted by each of the illumination optical systems 4a to 4g can be changed separately, and The line width formed on the substrate W can be adjusted. At this time, for example, when the line width of the substrate W measured in a certain projection area is thinner than the line width of another projection area by the line width measuring machine 30, Increasing the long-wavelength component of the exposure light makes the line width of the pattern image thicker, so that the line width formed on the substrate W can be made thicker. On the other hand, when the line width of the pattern is to be made thinner, the exposure light can be increased. In addition, in this embodiment, since the long-wavelength component of the exposure light is increased, the illuminance of the exposure light on the substrate W can be reduced. In order to obtain the same illuminance before the wavelength change of the exposure light, Detection result of detector 20 Increase the output of the light source driving section Ha, or drive the filter 31 with the filter driving section 42 ------------ install -------- order --------- ( Please read the note on the back? Matters before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 473819 A7 ----- -B7 V. Description of the invention () The wave device 41 is used to increase the illuminance. In the first to fifth embodiments, the pattern is actually formed on the substrate W by performing a development process after performing an exposure process. Measure the size of the pattern, and adjust the exposure light exposure or change the optical characteristics of the optical system based on the measurement result to make the line width of the pattern uniform, but the pattern actually formed during the measurement may not be necessary Line width (size) 'For example, a pattern image in the projection area may be detected by a detection device such as a CCD' and the optical characteristics of the optical system may be changed based on the detection result. In this case, because the development process is performed to actually form the pattern, the state of the pattern image (change in resolution) can be detected without measuring the size. Therefore, the state of the pattern image can be determined at an arbitrary time interval or a predetermined Time is reduced. Next, according to the detection result, the state of the pattern image can be performed each time. As the exposure device of this embodiment, the pattern of the mask M can be applied while the mask M and the substrate W are stationary, and A step-and-repeat type exposure apparatus in which the substrate W moves sequentially in sections. In FIG. 1, although a relationship of one to one for most of the illumination optical systems 4 a to 4 g is shown, the light beams of the light source 11 may be divided by optical fibers or the like and distributed to the plurality of illumination optical systems respectively. 4a ~ 4g. In addition, a plurality of light sources 11 may be provided, and the light beams may be mixed and distributed. At this time, the amount of exposure light to be irradiated is inserted into the optical path by a filter that changes the amount of light transmitted by an ND filter, etc., to adjust the desired amount of exposure, and control the exposure of each projection area Pa ~ Pg Light exposure. In addition, as the exposure device of this embodiment, the projection optical system is not used. The paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). &Quot; ~ " ---------- -Shang -------- Order --------- line (please read the precautions on the back before filling this page) 473819 Consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A7 B7 V. According to the invention (々 °) system, a proximity exposure device that closely contacts the photomask to the substrate and exposes the pattern of the photomask can also be applied. The use of the exposure device is not limited to an exposure device for liquid crystals that exposes a liquid crystal display element pattern to a corner glass substrate. For example, an exposure device for semiconductor manufacturing that exposes a circuit pattern to a semiconductor wafer or a thin film magnetic head may be used. The exposure device is also widely applicable. As the light source of the exposure device of this embodiment, not only g-line (436nm), h-line (405nm), i-line (365nm), KrF excimer laser (248nm), ArF excimer laser (l93nm), F2 laser can be used. (157nm), X-rays or electron beams can also be used. For example, in the case where an electron beam is used, a lanthanum hexaboride or a giant electron-emitting type can be used as the electron gun. Furthermore, when an electronic wire is used, a photomask may be used, or a pattern may be directly formed on a substrate without using a photomask. The magnification of the projection optical system can be not only an equal magnification system, but also a reduction system or an enlargement system. As a projection optical system, where far-ultraviolet rays such as excimer lasers are used, 'quartz or campstone can be used as materials for far-ultraviolet rays such as silicon materials', and when F2 lasers or X-rays are used, a reflective refraction system Or an optical system of a refraction system, or an electronic optical system formed by an electronic lens and a deflector as an optical system when an electronic wire is used. The optical path through which the electron wire passes is preferably in a vacuum state. When a linear motor is used for the substrate stage 9a or the mask stage 9b, an air bearing type using an air bearing or a magnetic air bearing type using a Lorentz force or a reaction force may be used. In addition, the table can be used along the guide 33 2 ^ 7 ^ centimeters) ------------ install -------- order --------- line ( (Please read the precautions on the back before filling out this page) 473819 A7 B7 V. Description of the invention (small) Mobile type or non-guide type without guide parts can also be used. When a flat motor is used as the driving device of the table, either one of the magnet element or the motor sub-element can be connected to the table, and the other of the magnet element or the motor sub-element can be set on the moving surface side (pedestal) of the table. Yes. As disclosed in Japanese Patent Application Laid-Open No. 8-166475, the reaction force generated by the movement of the substrate table 9a can be mechanically released to the bed (the earth) using a frame member. The present invention is also applicable to an exposure apparatus having such a structure. As disclosed in Japanese Patent Application Laid-Open No. 8-330224, the reaction force generated by the movement of the mask stage 9b can be mechanically released to the bed (the earth) using a frame member. The present invention can also be applied to an exposure device having such a structure. As described above, the exposure device of the embodiment of the present case can maintain various mechanical systems including the constituent components disclosed in the scope of the patent application, and maintain the accuracy of the machine. Electrical accuracy and optical accuracy are combined to manufacture. In order to maintain various precisions, before and after this assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are adjusted to achieve electrical accuracy. The assembly process from various sub-systems to the exposure device includes mechanical connection of various sub-systems, wiring connection of electrical circuits, piping connection of pneumatic circuit, and the like. Prior to the assembly process from the various sub-systems to the exposure device, the individual assembly processes for each sub-system are included. After the assembly of the exposure devices for various sub-systems is completed, comprehensive adjustments are made. The paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page. ) -Equipment -------- Order --------- Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 473819 A7 ----- --B7 V. Description of the invention (π) To ensure the accuracy of the entire exposure device. In addition, the manufacturing of the exposure device is preferably performed in a clean room under management such as temperature and cleanliness. A semiconductor device, as shown in FIG. 9, is performed through step 201 of designing the function and performance of the device; a step of making a photomask according to the design step, 202; manufacturing a substrate (wafer, glass) formed from a substrate of the device Substrate) step 203; using the exposure device of the previous embodiment to expose the pattern of the photomask to the substrate processing step 204 of the substrate; device assembly step (including cutting engineering, wiring engineering, packaging engineering) 205; and inspection step 206 While manufacturing. [Effects of the Invention] The exposure method and exposure device of the present invention have the following effects. The exposure method according to the first patent application scope and the seventh patent application exposure device 'is to measure the pattern size of each projection area on the substrate with a size measurement system, and the exposure light exposure amount of each illumination optical system and the optical system The optical characteristics are adjusted separately based on the measurement results measured by the dimensional measurement system. In this way, since the exposure light exposure amount of each illumination optical system and the optical characteristics of the optical system are adjusted based on the measurement results of the pattern size of each projection area formed on the substrate, for example, even if the characteristics of each optical system are different In this case, it can also be corrected so that the size of the pattern formed in most projection areas of the substrate can be made uniform. Therefore, the production capacity of the manufacturing substrate can be improved. According to the exposure method in item 2 of the scope of patent application, the relationship between the amount of exposure light exposure and the size change of the pattern image is obtained in advance, and the exposure light exposure of the illumination optical system is adjusted according to the relationship. 35 This standard is applicable to China National Standard (CNS) A4 (21〇 \ 297mm) '----------- installation -------- order ------ --- Line (Please read the notes on the back before filling this page) 473819 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention (θ) Efficiently obtain the most appropriate exposure of the lighting optical system, At the same time, the pattern sizes of most projection areas formed on the substrate can be efficiently made uniform. According to the exposure device of the eighth patent application, an exposure measurement system for measuring the exposure light exposure amount corresponding to the position of each projection optical system on the substrate is set, and according to the measurement result of the exposure measurement system, The control system can adjust the exposure light exposure amount of the illumination optical system, and the exposure light exposure amount of each illumination optical system is adjusted, for example, by measuring the exposure light exposure amount of each projection area on the substrate with the exposure amount measurement system, and adjusting each illumination optical After the irradiation amount of the system is made uniform at this time, it is performed based on the measurement result of the size measurement system. Therefore, the pattern shape of each projection area on the substrate can be efficiently uniformized. According to the exposure method of the patent application item 3 and the patent application of the exposure device item 9, due to the optical characteristics of the projection optical system, the resolution of the projection optical system is changed by changing each focal position, so that the size of the pattern image is changed. Therefore, the pattern size of most projection areas formed on the substrate can be made uniform. According to the exposure method of the patent application No. 4 and the patent application of the exposure device No. 10, since a predetermined position on the optical path of the illumination optical system is provided, an optical component having a variable opening through which the exposure light can pass is provided. Changing the opening of the optical component to change the resolution of the projection optical system changes the size of the pattern image. Therefore, the pattern size of most projection areas formed on the substrate can be made uniform. According to the exposure method of the scope of patent application No. 5 and the exposure device of scope of patent application No. 11, as the optical characteristics of the projection optical system, due to 36 ----------- install ------- -Order --------- Line (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 473819 Α7 Β7 V. Invention Explanation (λψ) The resolution of the projection optical system is changed by changing the number of openings to change the size of the pattern image. Therefore, the size of the formed pattern can be made uniform. (Please read the precautions on the back before filling out this page) The exposure method according to the patent application scope item 6 and the patent application scope item 12 as the optical characteristics of the illumination optical system. The wavelength of the exposure light changes the resolution of the projection optical system and changes the size of the pattern image. Therefore, the size of the formed pattern can be made uniform. [Brief description of the pattern] [Fig. 1] is a structural diagram showing an embodiment of an exposure apparatus of the present invention. [Fig. 2] A perspective view showing an embodiment of an exposure apparatus of the present invention. ^ [Figure 3] is a plan view illustrating the filter. [Fig. 4] A schematic configuration diagram illustrating a projection optical system. [Fig. 5] A diagram explaining a projection area on a substrate. [Fig. 6] Fig. 6 is a diagram illustrating a focus position adjusting device in a second embodiment of the exposure device of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Figure 7] is a diagram illustrating another implementation type of the focus position adjustment device. [Fig. 8] Fig. 8 is a diagram illustrating an opening number adjusting device in a third embodiment of the exposure device of the present invention. [Fig. 9] A flowchart showing an example of a manufacturing process of a semiconductor device. 37 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 473819 A7 ___B7 V. Description of the invention (^ /) [Symbol] Employees of the Bureau of Intellectual Property of the Ministry of Economic Affairs. Printed by consumer cooperatives 1 Exposure device 4 (4a ~ 4g) Illumination optical system 5 (5a ~ 5g) Projection optical system 7 Control unit (control system) 11 Light source 13 Wavelength filter (wavelength adjustment device) 22 Illuminance sensor (irradiance measurement system) 30 Line width Measuring machine (size measurement system) 58, 61 right-angled 稜鏡 (focus position adjustment device) 58a, 61a 稜鏡 mobile device (focus position adjustment device) LC lens controller (focus position adjustment device) 70 variable aperture (optical component) 80 Variable aperture (opening number adjustment device) Pa ~ Pg Projection area M mask W substrate 8 3 (Please read the precautions on the back before filling this page) --------- Order ----- ---- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)