TW466744B - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device Download PDF

Info

Publication number
TW466744B
TW466744B TW088114860A TW88114860A TW466744B TW 466744 B TW466744 B TW 466744B TW 088114860 A TW088114860 A TW 088114860A TW 88114860 A TW88114860 A TW 88114860A TW 466744 B TW466744 B TW 466744B
Authority
TW
Taiwan
Prior art keywords
memory
bit line
word line
read
circuit
Prior art date
Application number
TW088114860A
Other languages
English (en)
Chinese (zh)
Inventor
Syoji Syukuri
Takeshi Sakata
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW466744B publication Critical patent/TW466744B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
TW088114860A 1999-06-30 1999-08-30 Semiconductor integrated circuit device TW466744B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1999/003523 WO2001003190A1 (fr) 1999-06-30 1999-06-30 Circuit integre a semi-conducteurs

Publications (1)

Publication Number Publication Date
TW466744B true TW466744B (en) 2001-12-01

Family

ID=14236126

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088114860A TW466744B (en) 1999-06-30 1999-08-30 Semiconductor integrated circuit device

Country Status (2)

Country Link
TW (1) TW466744B (ja)
WO (1) WO2001003190A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100651825B1 (ko) * 2005-11-29 2006-12-01 한국과학기술원 기계적인 스위치를 이용한 메모리 어레이, 그의 제어 방법,기계적인 스위치를 이용한 표시 장치 및 그의 제어 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116987A (ja) * 1982-12-22 1984-07-06 Fujitsu Ltd 半導体記憶装置
JPS61287162A (ja) * 1985-06-13 1986-12-17 Mitsubishi Electric Corp 半導体記憶装置
JPH05129554A (ja) * 1991-07-01 1993-05-25 Toshiba Corp ダイナミツク型半導体記憶装置
JP3268690B2 (ja) * 1993-07-01 2002-03-25 株式会社日立製作所 半導体集積回路装置
JP4353546B2 (ja) * 1997-06-30 2009-10-28 富士通マイクロエレクトロニクス株式会社 ダイナミック型半導体記憶装置

Also Published As

Publication number Publication date
WO2001003190A1 (fr) 2001-01-11

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