TW449938B - Light emitting diode with a substrate electroplated with metal reflector and the manufacturing method hereof - Google Patents

Abstract

The present invention discloses a light emitting diode (LED) with a substrate electroplated with metal reflector and the manufacturing method thereof. A substrate with metal reflective surface is used as the permanent substrate of the LED. After growing the LED device structure on a temporary substrate, the LED device is adhered on a permanent substrate having the reflector. Next, the prior temporary substrate capable of absorbing the light is removed so that the emitted light energy from LED device is not absorbed by the substrate, and also the light is reflected toward the substrate direction from the surface to increase the light emitting brightness.

Description

V 44S93 8 V. Description of the invention (1) [Field of the invention] The present invention is a light-emitting diode coated with a metal reflector film substrate and a manufacturing method thereof. The light-emitting diode has a metal reflective surface substrate as a permanent substrate. After the LED element structure is grown on a temporary substrate, this LED element is pasted on a substrate with a permanent reflector, and then the temporary substrate that previously absorbed light is removed, so that the light energy emitted by the LED element is It is not absorbed by the substrate, and at the same time, light directed to the substrate can be reflected off the surface to enhance its luminous brightness. [Background of the Invention] The current development trend of visible light emitting diodes is that the light emitting brightness of the light emitting diode is getting brighter and brighter, and the size of the light emitting diode is getting smaller and smaller. US Patent Nos. 5 0 8 7 1 8 and 5 2 3 3 2 0 4 disclose a light emitting diode with a transparent window layer structure, which can be improved. The current crowding effect of conventional light-emitting diodes and increasing the amount of light emitted from the light-emitting diodes have resulted in a significant increase in the light-emitting diode's light-emitting brightness. In addition, 'U.S. Patent No. 5 and No. 4570 1 72 propose a light-emitting diode with a semiconductor multilayer reflector, that is, a DBR (Distributed Bragg Reflector) structure. Such a light-emitting diode can emit light to The light from the light absorbing substrate is reflected back to make it

Page 5 4499 3 8

The light emitting diode is emitted, and the light emitting brightness of the light emitting diode is increased.

FIG. 1 is a cross-sectional view of a conventional light emitting diode. The light emitting diode 100 includes a semiconductor substrate 102, a first ohmic contact electrode 101 formed on the back of the semiconductor substrate 102, and a The light-generating region 103 on the semiconductor substrate 102 and a first ohmic contact electrode 106 formed on the light-generating region 103. Due to the current congestion effect, the light emitting diode of this structure is limited by factors such as the critical angle of the emitted light and the substrate's light absorption, so that the luminous brightness is not very ideal. 'These light generating regions 103 can be determined by the p region and the n region. Composition, and then grow on the GaAs substrate 102, therefore, the lattice constant of the material of the light generating region 103 needs to match most of the lattice constant of the gallium arsenide substrate 102, and it can be seen that the light emitting diode structure directly grows on arsenic Gallium substrate 丨 〇2, but the energy gap of gallium bell is 1 _ 43eV 'less than the energy of visible light' and the light of the diode is anisotropic, so some light will enter the substrate and be deified Gallium absorption. U.S. Patent Nos. 5 0 087 1 8 and 523 3 20 4 propose to penetrate the window layer.

Structure 'to increase the amount of light emitted from the light-emitting diode. As shown by circle two, the structure of the light-emitting diode 2 0 0 is to grow the penetrating window layer 20 4 on the light-emitting diode 100 of the structure. 'The material package suitable for the transmission window layer 204, materials such as GaAsP and AIGaAs, whose energy gap is larger than that of the AlGalnP light generating region, in this case' Although it is possible to increase the critical angle of light emission and improve the current congestion effect, the light emitting diode is improved. Luminous brightness, but in terms of electrical properties, because the uppermost layer of the material that penetrates the window layer 204 and the AlGalnP light generating area is a heterojunction (heter 〇juncti ο η), there will be band differences (△ ec and △ &) The problem arises, and the forward bias value of the light emitting diode increases (the definition of yf

V. Description of the invention (3): When the light-emitting diode is passing through the current, the measured voltage value), and finally the power loss is increased. As for the light-emitting diode 300 with a multilayer film reflection layer structure proposed by U.S. Patent Nos. 5,235,781 and 4,570,172, such a structure is shown in FIG. 3, which includes a semiconductor substrate 302. 1, a multi-layer reflective layer 305 formed on the semiconductor substrate 302, a light-generating region 303 formed on the lower multi-layer reflective-layer 305, and a multi-layer reflective layer 304 formed on the light-generating region 303. A first ohmic contact electrode 3 0 6 formed on the upper multilayer film reflection layer 304 and a second ohmic contact electrode 3 0 1 formed on the back surface of the semiconductor substrate 30 2. In this conventional technique, the lower multilayer film The reflective layer 305 can v) reflect 90% of the light emitted from the light-generating region toward the light-absorbing substrate, and the upper multilayer reflective layer 3 0 can guide light to the upper surface of the light-emitting diode to improve The light absorption substrate causes light to be absorbed by the light absorption substrate. At the same time, the problem of poor brightness caused by the critical angle of the light can also be improved. However, because the reflective layer of the multi-layer film has many hetero junctions, so Will make the energy band difference (△ Ec and A The effect of Ev) is enlarged, and as a result, the forward bias value is greatly increased. Similarly, the power loss is eventually increased. Although the DBR structure proposed in the above-mentioned U.S. Patent Nos. 5235581 and 4570172 reflects the light incident on the substrate in the direction of the DBR structure and reflects it back to the upper surface. However, the DBR only generates light for normal incident light (such as D1 in Figure 3). The highest reflectivity 'for some obliquely incident light (such as D 2, D3, D4 in Figure 3), its reflectivity is limited, so its improvement on the brightness of visible light diodes still has its limits, but will The cost and difficulty of film-epitaxial growth are increased due to the fabrication of the D br structure.

4499 3 8 V. Description of the invention (4) US Patent No. 5,376,580 discloses a wafer-attached light-emitting diode, which uses a gallium arsenide substrate as a temporary substrate for epitaxy, and a light-emitting diode structure. (Confinement layer / Active layer / Confinement layer) is grown, and then the light emitting diode structure is adhered to a transparent substrate, and then the GaAs substrate is removed. In this way, the problem of light absorption of the substrate can be completely solved. However, the transparent substrate proposed by the aforementioned U.S. Patent No. 5 3 7 6 580 is GaP, but the GaP substrate is expensive and the GaP itself is orange. When the light of the LED enters the orange substrate, there is a problem of light chromaticity. As a transparent substrate, a P needs to be heat-treated at a high temperature for a long time (approximately 600-700 ° C, more than one hour), which will adversely affect the ρ η junction of the LED. [Objective of the invention] Kind of & iH 4tAuZn ^ AuBe Shi Xi wafer as a permanent substrate, t as an adhesive, the silicon element of the LED element film. Crystal 1, after the sore, the substrate, the light The mold-free substrate is coated with a metal reflective mirror film. The main purpose of the present invention is to provide a plate as a permanent light-emitting diode (gold-zinc one or gold beryllium).的 金 _!. Reflector 骖., And this gold zinc or gold beryllium 反射 · reflection — mirror film pasted here to detect gold zinc or gold touch the metal and then use I insect sister Moonong GaAi difference blue branch '_ 如_

The temperature of the chromaticity is determined by J, and the brightness of the light can be improved. Another purpose of the present invention is to provide a board as a light-emitting diode for a permanent substrate.

Page 8 4 ^ 993s V. Description of the invention (5) The light-emitting area of the light-emitting diode of the substrate as a permanent substrate may be any conventional light-emitting area structure, such as an 'upper cladding layer / active layer' (Active layer) / lower cladding layer (Double hetero structure) light emitting area, single hetero structure (Single hetero structure) light emitting area and Homo structure (Homo structure) light emitting area. The structure of the substrate of the metal mirror film as a permanent substrate can be applied to various traditional light-emitting areas, and has a wide range of uses. A third object of this description is to provide a method for manufacturing a light-emitting diode with a metal-coated substrate as a permanent substrate. The method includes: selecting a temporary substrate such as gallium arsenide and growing a component thereon. ; Select a base plate of a mineral metal mirror film, such as a gold-plated zinc or gold beryllium gold and a ray film wafer with a mirror film as a permanent anti-LE1) light-emitting area u time-sensitive substrate (ie, LED elements) Adhere to this permanent substrate; remove the adhesive components of the station temporarily by mechanical honing or chemical etching. Then form two ohmic contact electrodes on the light area. The manufacturing method of the invention can 1 degree of light and diode. a ^ ^ The fourth object of the present invention is to provide a kind of adhesive ware using photodiodes, ... is to use the difference in the expansion coefficient produced by the method to make the wafer and the permanent substrate expand the tube between the two materials ... The thermal expansion of stainless steel is taken from red graphite, and the quartz sleeve is still in the temperature / adhesion process. Stainless steel: the role of expansion is known, and it is left to exert force on objects. Description P3-Simplified Figure rk 449938 V. Description of Invention (6) Figure 1 is a cross-sectional view of a traditional light-emitting diode. FIG. 2 is a cross-sectional view of a conventional light-emitting diode having a window layer. Figure 3 shows a conventional light-emitting diode with a multilayer film reflective layer structure. FIGS. 4A to 4D are flowcharts of an LED element of the present invention adhered to a permanent substrate coated with a metal reflector film to produce a light emitting diode of the present invention. FIG. 5 is a sectional structural view of an LED element according to a specific example of the present invention. FIG. 6 is a flow chart of pasting the LED element of the present invention onto a permanent substrate coated with a metal mirror film. FIG. 7 is a cross-sectional view of the sticking inflammation appliance of the present invention. [Illustration of drawing number]

100 200 Light-emitting diode 101 201 Second ohmic contact electrode 102 202 Semiconductor substrate 103 203 Light-generating layer 106 206 First ohmic contact electrode 200 Light-emitting diode 204 Penetrating window layer 300 Light-emitting diode 301th — ohmic contact electrode

Page 10 4 9 9 3 8 V. Description of the invention (7) 3 0 2 Semiconductor substrate 303 Light generating area 304 Upper multilayer reflective layer 3 0 5 Lower multilayer reflective layer 3 0 6 First ohmic contact electrode 41 LED light emitting area 411 first flat electrode 412 first flat electrode 42 temporary substrate

4 3 Metal adhesive layer 44 Permanent substrate 5 2 Light-emitting area 521 Overcoat layer 522 Active layer

5 2 3 Lower cladding layer 524 Contact layer 5 2 5 Rest stop layer 5 2 6 Buffer layer 53 GaAs substrate 61 Cleaning permanent substrate 62 Cleaning LED wafer 63 Plating metal adhesive layer by thermal evaporation method 64 Yu Feng, Air Or paste 65 in alcohol, place it in the fixture and heat-treat

Page 11 4 499 3 8 V. Description of the invention (8) 66 Remove the GaAs substrate from the wafer and engraving it with the p and η electrodes to form an ohmic contact to make a flat LED element. 7 Stick the inflammation tool. 71 Non-recording steel screw. 72 Graphite boat top cover 7 3 Graphite cylinder 7 4 Wafer pair 7 5 Graphite sheet 7 6 Graphite boat lower compartment [Detailed description of the embodiment of the present invention (1)] The present invention is to deposit the LED element structure on a temporary handle ", Adhere the LED element to a Shixi wafer that is used as a permanent substrate and coated with a metal mirror film, and then remove the temporary substrate that previously absorbed light, so that the light energy emitted by the LED element is not absorbed by the mount On the contrary, in order to increase the degree of light extinction, the LED components to which this invention technology is applied are shown in Figure 5, and the flow chart of the components being bonded to the permanent substrate is shown in Figure 6. The invention is a method for manufacturing a substrate with a metal reflective mirror film, such as a gold-plated zinc or gold-plated sand wafer as a permanent substrate, and includes: (A) selecting a temporary substrate 42 so that LED light-41 is grown on the temporary substrate 42 to form a LED element; (B) a permanent substrate 44 is selected, and the permanent substrate 44 is plated with metal

Page 12 449 9 3 8 V. Description of the invention ⑻ '*-Two-emission film 43 ′ and using the metal reflective film 43 as a metal adhesive layer, the ordinary pieces are adhered to the permanent substrate 44; (C) The temporary substrate 4 2 is removed by mechanical grinding or chemical chain etching. (㈧ A planar LED element is made, and the substrate is the permanent substrate 44; (E) An ohmic contact electrode 4i is formed on the planar LED element. 1. Μ? Among them, if a metal adhesive layer is used as the LED contact electrode, the metal adhesive layer 43 can be used instead of the ohmic contact electrode. And 'the temporary substrate 41 is selected from (jaAs or I np; the permanent substrate 44 is selected from silicon (Si), gallium arsenide (GaAs), silicon carbide (Sic), silicon oxide (ΑΙΑ), glass, phosphide jwGaP), boron nitride (M), aluminum nitride (Ai N), or Other substrates can be substituted, but its electrical thermal conductivity and heat (S 0, oxide (A 1_ ^)) have the best effect; the metal reflective film (metal adhesion layer) is selected from indium (In), Tin CSn), aluminum (/ U), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), platinum (ρ ^), lead (pb), lead tin (PbSn ), AuBe ), Gold zinc (AuZn), gold germanium (Au-Ge), nickel (NI); the #etching agent is composed of ammonia, hydrogen peroxide, and water; the element can be a p / n junction or η / ρ Junction surface 'There is an etching stop layer 5 25 between the LED light emitting area and the substrate, so that the substrate can be effectively removed. The material of the etching stop layer is mainly a material resistant to the substrate etching solution and is different from the material of the temporary substrate' Such as AlxGa ^ xAs, χ > 0.2 or InxGa ^ xP,

0.55 > X > 0.45. X Technical content of the embodiment of the present invention

Page 13 449938 V. Description of the invention (1) (1) When the LED element (4 1, 4 2) is adhered to a silicon wafer as a permanent substrate 44, and a metal reflector film is plated on the permanent substrate 44, The silicon wafer permanent substrate 44 must be cleaned first; the permanent substrate 44 is placed in acetone, and it is cleaned with an ultrasonic oscillator for 5 minutes to remove the dust and grease of the permanent substrate 44, and then H〗 S 04. H2 〇2 〇 Wash at a temperature of 90 ~ 100 ° C for about 10 minutes, the purpose is to remove the organic matter and heavy metals on the permanent substrate 44, and then thermal evaporation, electron gun evaporation or sputtering Method, a metal mirror film is plated, and the metal mirror film is used as a metal adhesive layer 43. In a specific example of the present invention, the detailed structure of the LED element is shown in FIG. (2) When adhering LED components, you must also clean the surface of the LED components first by cleaning them; put the LED components in acetone and clean them with an ultrasonic oscillator for 5 minutes to remove dust, and then wash them with diluted HF to remove the LED components. An oxide layer on the surface. (3) Paste the cleaned LED element and the silicon wafer permanent substrate 44 with metal-plated adhesive layer 4 3 in water, air, or alcohol, and then select an appropriate adhesive fixture to adhere the LED element to the metal-plated layer. The permanent substrate 44 of the layer 43 is placed in a fixture 'see FIG. 4a. Please refer to Figure 7 for the structure of the fixture. (4) The LED element 41'42 placed in the jig and the silicon wafer permanent substrate 44 coated with the metal adhesive layer 4 3 are heat-treated at a temperature of about 300- 4 5 0 ° C and a time of about 10- After 20 minutes, it will cool down naturally, please refer to Figure 4b. C 5) Successfully pasted samples after heat treatment (LED components and Bell metal paste layer 4 3 Shi Xi BB round permanent substrate 4 4) by mechanical, grinding or chemical surname

Page 14 4 49 9 3 8 V. Description of the invention (11) The etching agent NH4OH:% 02 removes the temporary GaAs substrate 42, see FIG. 4c. (6) Engraving the LED element pattern with a chemical name with a selective # engraving; that is, engraving with H C1 · Η3 Po4 to P period (A1D. 7 G a0.3.) 0.5 I η 0.5 The P coating or η-type (AlD.7Gafl, 3) 0.5InG.5Pi coating is shown in Figure 4D. (7) Fabricate planar electrodes 411 and 412; that is, form an ohmic contact electrode of p-type (AI〇7GaQ3) 0 51 nD. 5 P or (A 1Q 7 G a〇3) Q 51 n〇5 P, that is, An LED device can be obtained in which the substrate is a metal mirror plated on a silicon wafer. [Detailed description of the embodiment of the present invention (Twenty-fifth is a cross-sectional structure view of an LED element according to a specific example of the present invention. The LED element includes: a light-emitting region 52 and a GaAs substrate 53. The GaAs substrate 53 may be an n-type, A GaAs substrate of p-type or insulation (SI). The light-emitting region 52 contains a thickness of 0.1-0,3 / ^ (eight ^ ~ 3) (). 51] 1 (). 5? .cladding layer) 521, an undoped [i-type] active layer with a thickness of 0.2-1 / zm 5 2 2. (Al0.7GaQ, 3) with a thickness of 0.2-1 / zm 〇.5Ιηο · 5Ρ Lower cladding layer 52 3. A (A 1D. 7 Ga0. 3) with thickness of 0 0 1-2 // m. 51 nQ.5 P contact layer (concent ac t layer) 524, An I nGaP etching stop layer 525 and GaAs buffer iayer 5 26 having a thickness of 0.01 to 0.1. The LED light emitting region 52 has a p / i / n structure and can also be long. It has an n / i / p structure. I nGaP can be replaced by a 1 GaAs as a cooking stop layer. Medium 'first clean the permanent substrate 6 1; clean

Page 15} 449938 V. Description of the invention (12) LED wafer 6 2; metallizing adhesive layer 63 by thermal evaporation; sticking 64 in water, air or alcohol; placing in a fixture and heat treating 65; removing A GaAs temporary substrate on a wafer pair is etched and plated with p and ^ electrodes to form an ohmic contact to make a planar LED element 66. FIG. 7 is a cross-sectional view of the sticking jig of the present invention. The sticking fixture 7 includes a sticking jig 7, stainless steel screws 71, a graphite boat cover 7 2, a graphite cylinder 73, a wafer pair 74, a graphite sheet 75, a graphite boat lower compartment 76, and a wafer bonding clip. The thermal expansion coefficients of the two graphites are not the same in the two provinces. 对 ^^^^^^^^^^^

(Wafer pa 1 r 彳 is bonded together at high temperature. The characteristics of the fixture of the present invention are taken from stainless steel screws. Because the thermal shrinkage coefficient of stainless steel is greater than the thermal service coefficient of graphite ' The non-scale steel will be the color of play-force. '' Features and advantages of the present invention: (1) The present invention replaces traditional light-absorbing substrates (such as GaAs) or permanent light-absorbing substrates (such as GaAs) or Non-absorptive and colored substrates (such as Gap), enhance the luminous brightness by the reflection effect of the metal reflective film, and the problem of S-degree of Yishan color ~ more specifically this metal reflective film—also can be used as Feng metal " For the purpose of sticking sound. — (2) The present invention is heat treated at low temperature (about 30 0-450 ° C), the time is about 5 to 20 minutes, the sound is not loud, and in this low phase-pollution · 4ϋ The problem.

Page 16 449938 V. Description of the invention ¢ 13) (3) The cross-section diagram of the sticking jig used in the present invention is shown in Figure VII, which uses the pressure provided by two materials with different thermal expansion coefficients to apply to the applied LE Samples (ie LED components and permanent substrate), the force can be measured by a torque wrench. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of implementation of the present invention; that is, all changes and modifications made in accordance with the scope of patent application for the present invention are covered by the patent scope of the present invention.

Page 17 4 4 9 9 3 8 Schematic description [Schematic illustration] Figure 1 is a cross-sectional view of a traditional light-emitting diode. FIG. 2 is a cross-sectional view of a conventional light-emitting diode with a penetrating window layer. Figure 3 shows a conventional light-emitting diode with a multilayer film reflective layer structure. FIGS. 4A to 4D are flowcharts of an LED element of the present invention adhered to a permanent substrate coated with a metal reflector film to produce a light emitting diode of the present invention. FIG. 5 is a sectional structural view of an LED element according to a specific example of the present invention. FIG. 6 is a flow chart of pasting the LED element of the present invention onto a permanent substrate coated with a metal mirror film. FIG. 7 is a cross-sectional view of the sticking jig of the present invention. [Illustration of drawing number 100 200 light emitting diode 101 201 second ohmic contact electrode 102 202 semiconductor substrate 103 203 light generating layer 106 206 first ohmic contact electrode 200 light emitting diode 204 penetrating window layer 300 light emitting diode 301 first Ohmic contact electrode 302 semiconductor substrate

Page 18 449938 Brief description of the drawings 30 3 Light generating area 3 0 4 Upper multilayer film reflection layer 30 5 Lower multilayer film reflection layer 3 0 6 First ohmic contact electrode 41 LED light emitting area 41 1 First planar electrode 412 First plane Electrode 42 Temporary substrate 43 Metal adhesive layer 44 Permanent substrate 5 2 Light-emitting area 521 Upper coating layer 5 22 Active layer 523 Lower coating layer 524 Contact layer 5 2 5 Etched stop layer 5 26 Buffer layer 53 GaAs substrate 61 Cleaning Permanent substrate 6 2 Clean LED wafer 63 Plating metal adhesive layer by thermal evaporation 64 Paste 65 in water, air or alcohol 65 Set the mold and perform heat treatment 6 6 Remove the wafer and attach the G a A s substrate and #etch and Formation of ρ and η electrode

449938 Simple description of 圊 -style ohmic contact to make flat LED elements 7 Adhesive fixture 71 Stainless steel screws 7 2 Graphite boat cover 73 Graphite cylinder 7 4 Wafer pair 75 Graphite sheet 7 6 Graphite boat lower compartment

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Claims (1)

44993 8 VI. Scope of patent application 1 · A method for manufacturing light-emitting diodes. This method uses a substrate with a metal reflective film as a permanent substrate, including: CA) Select a temporary substrate to make it a temporary substrate. (B) Select a permanent substrate and plate a metal reflective film on the permanent substrate, and use the metal reflective film as a metal adhesive layer to form the LED element. Adhere to the permanent substrate; (C) Remove the temporary substrate on the other side of the LED element to which the permanent substrate is adhered by mechanical grinding or chemical etching; (D) Make a planar LED element with the substrate as Permanent substrate; (E) forming an ohmic contact electrode on a planar LED element. 2 _ The method for manufacturing a light emitting diode as described in item 1 of the scope of the patent application, wherein the permanent substrate is selected from silicon (Si), gallium arsenide (GaAs), silicon carbide (siC), and alumina (ai2 〇3), glass, gallium phosphide (GaP), boron nitride (βN), aluminum nitride (A1N) or other alternative substrates. 3 _ The method for manufacturing a light-emitting diode as described in item 1 of the scope of patent application, wherein the metal reflective film can be used as an LED contact electrode, and the LED contact electrodes are all on the same plane; and the metal reflective film can replace ohms Touch the electrode. 4. The method for manufacturing a light-emitting diode as described in item 1 of the scope of the patent application, wherein the metal is a reflective film selected from the group consisting of indium (ln), tin (Sn), aluminum (A 1), and gold (A u), platinum (P1 :), zinc (Z η), silver (A g), Chin (T i), wrong Page 21 449 9 3 8 VI. Patent Application (Pb), Au Beryllium (AuBe), Au Germanium (AuGe), Nickel (Ni) 'PbSn' or Au Incline (AuZn) and other metals. 5. The method for manufacturing a light-emitting diode according to item 1 of the scope of the patent application, wherein the temporary substrate is selected from GaAs or InP. 6 _ The method for manufacturing a light-emitting diode according to item 1 of the scope of the patent application, wherein the LED device can be a p / n junction, an n / i / p junction, or an n / p junction. 7. The method of manufacturing a light-emitting diode as described in item 1 of the patent claim, wherein the light-emitting area of the LED element may have any conventional structure, including: an upper cladding layer / active layer layer) / double hetero s'tr uc tur e light emitting area, single hetero structure light emitting area, and homo structure (Homo structure) light emitting area Area. 8. The method for manufacturing a light-emitting diode according to item 1 of the scope of patent application, wherein the etchant is composed of hydrochloric acid and phosphoric acid. 9. The method for manufacturing a light-emitting diode as described in item 丨 of the patent application scope, wherein the LED element has an etch stop layer (e1; ching st oop 1 ayerO ', the touch stop layer is provided on the LEI) to emit light Between the region and the temporary substrate, so that the temporary substrate can be effectively removed. 449938 ------- VI. Patent application scope 10 · As described in the method for manufacturing light-emitting diodes described in item 9 of the scope of patent application, the material of the rice-cut stop layer in f is mainly a material resistant to substrate etching solution , Which can be selected from AlxGai_xAs' x > 〇2 or InxGaHP, 0.55 > X > 0, 45. 1 The method for manufacturing a light-emitting diode according to item 1 of the scope of the patent application, wherein the metal reflective film is coated with the metal reflective film by a sputtering method such as thermal evaporation or electronic snap deposition, and the metal is The reflective film serves as the metal adhesion layer. 1 2. The method for manufacturing a light-emitting diode according to item 1 of the scope of patent application, wherein the metal reflective film (metal adhesion layer) can adhere the LED element to the permanent substrate, and a jig is provided to The cleaned LED element and the permanent substrate coated with a metal reflective film (metal adhesion layer) are pasted in air, water or alcohol, and then the temporarily pasted substrate is placed in the fixture 'and passed through a Heat treatment to provide better adhesion 1 3 · The method for manufacturing a light emitting diode as described in item 12 of the scope of patent application, wherein when the LED element is adhered to the permanent substrate with a metal reflective film, the fixture provided by the ten is matched In this heat treatment method, the difference in thermal expansion between the two materials in the jig is used to apply ink to the two wafers to make the wafer pairs stick together at the local temperature. 1 4 · The manufacturing method of the light-emitting diode as described in item 12 of the patent scope of Shin-Tsing Patent, wherein the main material of the fixture is graphite, and the screw material is Page 23 449938 VI. Scope of patent application Low iron content, high temperature resistance, and hardness η π steel materials 15. Method as described in item 12 of the scope of the patent application, ^ ^ ^. Bezoxun's light-emitting diode manufacturing > The method of heat treatment is to perform 16 · in a furnace tube with a fast heating speed of Φ and 疋, and a kind of permanent light emitting diode with a metal reflective film includes: a flat surface of a light emitting diode of a permanent substrate A light-emitting diode light-emitting area; a permanent substrate; a metal reflective film, which can be used as a metal adhesive layer, the LED element is adhered to the permanent substrate, the metal adhesive layer is sandwiched between the LED hair Between the first region and the permanent substrate; and two electrodes, which are grown in place on the light emitting region. 1 7. The light-emitting diode according to item 16 of the scope of patent application, wherein the permanent substrate is selected from silicon (S i), gallium arsenide (G a As), silicon carbide (S i C), Oxide iS (Al2 03), glass, gallium phosphide (Gap), boron nitride (BN), aluminum nitride (A1N) or other alternative substrates. 1 8. The light-emitting diode according to item 16 of the scope of patent application, wherein the metal reflective film is selected from the group consisting of indium (In), tin (Sn), junction (A1), gold (Au), and white ( Pt), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), gold beryllium (AuBe), gold germanium (AuG.e), nickel (Ni), lead tin (PbSn), or gold zinc ( AuZn) and other metals Page 24 449 9 3 8 F. Patent scope 1 9. The light-emitting diode described in the scope of patent application 苐 16, wherein the metal reflective film is sputtered by thermal evaporation or electron gun evaporation. The metal reflective film is plated by the method, and the metal reflective film is used as the metal adhesive layer. 20. The light-emitting diode according to item 16 of the scope of patent application, wherein the two 'electrodes can use the metal-plated reflective film as an LED contact electrode or an ohmic contact electrode. 2 1. The light-emitting diode according to item 16 of the scope of patent application, wherein the light-emitting area can be any conventional light-emitting area structure, including: an upper cladding layer / active layer / The lower cladding layer has a double hetero structure light emitting area, a single hetero structure light emitting area, and a homo structure light emitting area. Page 25