CN211088297U - High-brightness light-emitting diode - Google Patents
High-brightness light-emitting diode Download PDFInfo
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- CN211088297U CN211088297U CN201921990667.5U CN201921990667U CN211088297U CN 211088297 U CN211088297 U CN 211088297U CN 201921990667 U CN201921990667 U CN 201921990667U CN 211088297 U CN211088297 U CN 211088297U
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- 239000000758 substrate Substances 0.000 claims abstract description 73
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000005253 cladding Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 23
- 239000002184 metal Substances 0.000 abstract description 23
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 38
- 230000001965 increasing effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910017974 NH40H Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical group II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a high brightness emitting diode, emitting diode include semiconductor substrate and luminous region, semiconductor substrate is the gallium arsenide material, luminous region comprises heavily doped GaAs contact layer, AlGaInP upper cladding, AlGaInP active layer, AlGaInP lower cladding, AlAs etching stop layer and GaAs buffer layer in proper order, GaAs buffer layer contact semiconductor substrate. The utility model discloses a light emitting diode with metal coating reflects permanent substrate, the luminance of effectively reliable assurance light emitting diode.
Description
Technical Field
The present invention relates to light emitting diode (L ED) technology with a metal coated reflective permanent substrate.
Background
A cross-sectional view of a conventional light emitting diode is shown in fig. 1, and a light emitting diode 100 includes a semiconductor substrate 102, a first ohmic contact electrode 101 formed on a rear side of the semiconductor substrate 102, a light emitting region 103 formed on the semiconductor substrate 102, and a second ohmic contact electrode 106 formed on the light emitting region 103. The light emitting region 103 is composed of a p-type region and an n-type region, and is grown on a gallium arsenide (GaAs) substrate 102, and due to a current crowding effect, an emission angle of light is limited, and light absorption by the substrate is limited, so that the light emitting diode is not strong in illuminance. Most of the light emitting region 103 has a lattice constant matching that of the gallium arsenide substrate, i.e., the visible light emitting diode is fabricated directly on the gallium arsenide substrate 102. Since the energy gap of gallium arsenide is smaller than that of visible light by 1.43eV and light emitted from the diode is isotropic, part of the light enters the substrate and is absorbed by the gallium arsenide substrate, so that the illuminance of the light emitting diode is not strong.
In order to enhance the brightness of the diode, the following two schemes are currently adopted:
as shown in fig. 2, the structure of the led 200 is composed of a transparent window layer 204 grown on the led 100 shown in fig. 1, through which the current crowding effect of the conventional led is reduced and the current divergence is increased. Suitable materials for the transparent window layer 204 are GaP, GaAsP, AlGaAs, etc., with an energy GaP larger than that of the AlGaInP light emitting region, in which case the critical angle of emitted light can be increased, reducing the current crowding effect, and thus enhancing the illumination of the led. In terms of electrical characteristics, since the uppermost layer of the transparent window layer 204 and the material on the AlGaInP light generation region have a heterojunction, the energy gap difference causes an increase in the forward bias voltage vf of the light emitting diode, and as a result, the power consumption of the light emitting diode increases.
As shown in fig. 3, the light emitting diode includes a semiconductor substrate 302, a lower multi-layer reflector 305 formed on the semiconductor substrate 302, a light emitting region 303 formed on the lower multi-layer reflector 305, an upper multi-layer reflector 304 formed on the light emitting region 303, a first ohmic contact electrode 306 formed on the upper multi-layer reflector 304, and a second ohmic contact electrode 301 formed on the rear side of the semiconductor substrate 302. light emitted from the light emitting diode is reflected back by the semiconductor multi-layer reflector, i.e., a Distributed Bragg Reflector (DBR), so as to increase the illumination intensity of light, in the light emitting diode of the related art, the multi-layer reflector 305 of the lower layer reflects 90% of light emitted from the light emitting diode to a light absorbing substrate, while the multi-layer reflector of the upper layer guides the light to the upper surface of the light emitting diode, thereby increasing the illumination intensity of light, therefore, the absorption problem of the substrate to the light is alleviated, the problem related to the limited critical angle is also improved, but the problem of poor influence of the gap is increased due to the many heterojunctions of the multi-layer reflector, thereby increasing the forward bias Vf. to the incident light, as shown in fig. 3, the problem of the light emitting diode, the difficulty of increasing the difficulty of manufacturing of the conventional gallium arsenide based on the conventional light emitting diode due to the difficulty of increasing the difficulty of the conventional light emitting diode due to the difficulty of increasing the difficulty of the conventional technology of manufacturing a thin epitaxial layer of the conventional light emitting diode due to increase of the conventional light emitting diode due to the difficulty of the conventional light emitting diode due to the difficulty of removing.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that realize an L ED structure that has higher illuminance and tone.
In order to realize the purpose, the utility model discloses a technical scheme be: a high-brightness light-emitting diode comprises a semiconductor substrate and a light-emitting region, wherein the semiconductor substrate is made of gallium arsenide materials, the light-emitting region is sequentially composed of a heavily doped GaAs contact layer, an AlGaInP upper coating layer, an AlGaInP active layer, an AlGaInP lower coating layer, an AlAs etching stop layer and a GaAs buffer layer, and the GaAs buffer layer is in contact with the semiconductor substrate.
The light emitting region has a p/i/n structure and/or an n/i/p structure, and the AlAs etch stop layer functions as an etch stop layer.
The thickness of heavily doped GaAs contact layer is 0.1-0.3mm, the thickness of AlGaInP upper cladding layer is 0.2-1mm, the thickness of AlGaInP active layer is 0.2-1mm, the thickness of AlGaInP lower cladding layer is 0.2-1mm, the thickness of AlAs etching stop layer is 0.1mm, and the thickness of GaAs buffer layer is 0.1 mm.
The utility model has the advantages as follows:
(1) the use of a permanent substrate with a mirror instead of a conventional light absorbing substrate (e.g., GaAs) or colored substrate (e.g., GaP) has no relation to the optical properties of the substrate because the light is reflected before reaching the substrate, thus increasing the illumination and color tone of L ED;
(2) the utility model is heat treated at lower temperature (about 300-;
(3) the utility model discloses a bonding tool's characteristics replace quartz sleeve with stainless steel screw, because the coefficient of thermal expansion of stainless steel is greater than graphite, at the high temperature bonding in-process, axial pressure is applyed to the wafer to the stainless steel.
Drawings
The following brief descriptions of the contents expressed by each figure and the marks in the figures in the specification of the present invention are as follows:
FIG. 1 is a cross-sectional view of a prior art light emitting diode;
FIG. 2 is a cross-sectional view of a conventional light emitting diode having a transparent window layer;
FIG. 3 shows a light emitting diode having a conventional multilayer reflective structure;
FIGS. 4A-4D are flow diagrams illustrating the fabrication of a light emitting diode according to the present invention by bonding L ED elements on a metal coated reflective permanent substrate;
fig. 5 is a cross-sectional view of an L ED element of an embodiment of the invention;
fig. 6 is a flow chart of the application of L ED elements to a permanent substrate with a mirror;
fig. 7 is a cross-sectional view of a wafer bonding tool of the present invention.
Detailed Description
The following description of the embodiments with reference to the drawings is provided to explain the embodiments of the present invention in further detail, such as the shapes and structures of the components, the mutual positions and connection relationships among the components, the functions and working principles of the components, the manufacturing process, and the operation and use method, etc., so as to help those skilled in the art to understand the concept and technical solutions of the present invention more completely, accurately and deeply.
In the present invention, L ED elements are first grown on a temporary substrate, which L ED elements are also attached to a permanent substrate having a metal reflector, and then the temporary substrate is removed, so that the light emitted by the LED elements is not absorbed by the substrate, to enhance the illumination of the emitted light, the LED elements employing the techniques of the present invention are shown in FIG. 5.
L ED element includes a light emitting region 52 and a GaAs substrate 53 the light emitting region includes a heavily doped GaAs contact layer 521 with a thickness of 0.1-0.3mm, an AlGaInP upper cladding layer 522 with a thickness of 0.2-1mm, an AlGaInP active layer 523 with a thickness of 0.2-1mm, an AlGaInP lower cladding layer 524 with a thickness of 0.2-1mm, an AlAs etch stop layer 525 with a thickness of 0.1mm and a GaAs buffer layer 526. L ED light emitting region 52 has a p/i/n structure and/or an n/i/p structure.
FIG. 6 shows a process flow diagram for bonding L ED elements to a metal-coated reflective permanent substrate Note that after bonding L ED elements to a metal-coated reflective permanent substrate, the temporary substrate is removed, thus avoiding the need for thick epitaxial layers.
The utility model relates to a manufacturing process of L ED component with metal coating reflection permanent substrate, including the following steps:
(A) selecting a temporary substrate 42, and growing a light-emitting region 41 on the temporary substrate 42 for forming L ED elements as shown in FIG. 4A;
(B) selecting a permanent substrate 44 coated with a metal mirror 43 and adhering the L ED elements to the permanent substrate 44 using a metal adhesive, as shown in FIG. 4B;
(C) removing the temporary substrate 42 by mechanical grinding or chemical etching, as shown in fig. 4C;
(D) manufacturing a planar L ED element with a permanent substrate;
(E) ohmic contact electrodes 411 and 412 are formed on the planar L ED element, as shown in fig. 4D;
(F) the light emitting region is etched onto the metal bond, and if the material of the metal bond is the same as that of the metal contact electrode 411, such as gold and beryllium alloy (AuBe), the ohmic contact electrode 411 is replaced with the metal bond.
The temporary substrate 42 is GaAs or InP and the permanent substrate 44 is a high thermal conductivity material such as Si, GaAs, and Al2O 3. SiC, GaP, BN, AlN, glass, quartz or metal may also be used as the permanent substrate 44. The optical properties of the permanent substrate 44 are irrelevant because the light will be reflected before reaching the base plate. The metal binder is iodine tincture, tin (Sn), aluminum (Al), gold (Pt), platinum (titanium), zinc (Ti), zinc (n), silver (Ag), palladium (Pd), gold beryllium (AuBe), gold germanium nickel (AuGeNi), lead-tin (Pb-Sn) alloy and the like.
The etchant is formed of hydrochloric acid and phosphoric acid, the L ED element may have a p/n junction or an n/p junction, and an etch stop layer 525, as shown in FIG. 5, is formed between the light emitting region and the substrate to effectively remove the substrate.
The details of the technology for manufacturing the light emitting diode are (1) cleaning the permanent substrate 44 before bonding the L ED element (temporary substrate 42, light emitting region 41) to the permanent substrate 44, placing the permanent substrate 44 in acetone, and cleaning with an ultrasonic cleaner for 5 minutes to remove dust on the permanent substrate 44. if the permanent substrate is not made of any metal or alloy, cleaning with sulfuric acid at a temperature of 90-100 c, removing organic or heavy metals on the permanent substrate 44 for about 10 minutes. a metal mirror (metal adhesive) 43 is deposited by heat or electron gun evaporation, the metal serving as both an adhesive layer and a mirror surface.
(2) Before adhering L ED elements to a permanent substrate, it was first necessary to clean the L ED element surfaces of contaminants, place the L ED elements in acetone, then clean them with an ultrasonic cleaner for 5 minutes to remove dust, and then remove the oxide layer from the L ED element surfaces with buffered HF.
(3) The cleaned L ED elements were bonded in air or alcohol to a permanent substrate 44 coated with a metal bond 43, as shown in FIG. 4A, then the L ED elements and the permanent substrate 44 were placed in a wafer bonding tool as shown in FIG. 7.
(4) The L ED element temporary substrate 42, the light-emitting region 41, and the permanent substrate 44 coated with the metal bonding agent 43 were heat-treated at a temperature of 300-450 ℃ for about 5-10 minutes and then naturally cooled, and the structure was as shown in FIG. 4B.
(5) Temporary GaAs substrate 42 was removed from the processed sample (L ED elements and permanent substrate coated with metal bond 43) by mechanical grinding or chemical etching using an etchant (NH40H: OH2O2), the structure of which is shown in FIG. 4C.
(6) L ED element is made by selective etching process of H3PO4 to etch p-type AlGaInP or n-type AlGaInP in the p/n region as shown in FIG. 4D.
(7) Planar electrodes 411 and 412, i.e., ohmic contact electrodes of p-type AlGaInP or n-type AlGaInP are formed.
Fig. 6 is a flow chart showing the bonding of L ED elements to a permanent substrate, first cleaning the permanent substrate (step 61), then cleaning the L ED wafer (step 62), next evaporating the metal adhesive 43 and coating it on the permanent substrate using a hot-plate or electron gun (step 63), L ED elements are bonded to the permanent substrate in water, air or alcohol (step 64), placing the bonded structure (wafer pair) in a wafer bonding tool and hot working (step 65), removing the GaAs temporary substrate from the wafer pair, then etching into planar L ED elements (step 66).
The utility model discloses a wafer bonding tool's cross sectional view is shown in fig. 7, and this wafer bonding tool includes stainless steel screw 71, graphite upper cover 72, graphite post 73, graphite gasket 75 and graphite cavity of resorption 76. wherein press from both sides tight a wafer pair (be permanent substrate and L ED wafer) 74, because two kinds of material thermal expansion coefficient are different in this wafer bonding tool, compress tightly two of wafer pair, make it fuse under higher temperature.
The present invention has been described above with reference to the accompanying drawings, and it is obvious that the present invention is not limited by the above-mentioned manner, and various insubstantial improvements can be made without modification to the method and technical solution of the present invention, or the present invention can be directly applied to other occasions without modification, all within the scope of the present invention.
Claims (2)
1. A high-brightness light-emitting diode comprises a semiconductor substrate and a light-emitting region, wherein the semiconductor substrate is made of gallium arsenide material, and the high-brightness light-emitting diode is characterized in that: the light-emitting region is sequentially composed of a heavily doped GaAs contact layer, an AlGaInP upper cladding layer, an AlGaInP active layer, an AlGaInP lower cladding layer, an AlAs etching stop layer and a GaAs buffer layer, and the GaAs buffer layer is in contact with the semiconductor substrate;
the light emitting region has a p/i/n structure and/or an n/i/p structure, and the AlAs etch stop layer functions as an etch stop layer.
2. A high brightness led according to claim 1, wherein: the thickness of heavily doped GaAs contact layer is 0.1-0.3mm, the thickness of AlGaInP upper cladding layer is 0.2-1mm, the thickness of AlGaInP active layer is 0.2-1mm, the thickness of AlGaInP lower cladding layer is 0.2-1mm, the thickness of AlAs etching stop layer is 0.1mm, and the thickness of GaAs buffer layer is 0.1 mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921990667.5U CN211088297U (en) | 2019-11-18 | 2019-11-18 | High-brightness light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921990667.5U CN211088297U (en) | 2019-11-18 | 2019-11-18 | High-brightness light-emitting diode |
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| Publication Number | Publication Date |
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| CN211088297U true CN211088297U (en) | 2020-07-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767781A (en) * | 2019-11-18 | 2020-02-07 | 国网安徽省电力有限公司南陵县供电公司 | High-brightness light-emitting diode and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767781A (en) * | 2019-11-18 | 2020-02-07 | 国网安徽省电力有限公司南陵县供电公司 | High-brightness light-emitting diode and manufacturing method thereof |
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