TW449819B - Semiconductor wafer cleaning system - Google Patents

Semiconductor wafer cleaning system Download PDF

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Publication number
TW449819B
TW449819B TW89108118A TW89108118A TW449819B TW 449819 B TW449819 B TW 449819B TW 89108118 A TW89108118 A TW 89108118A TW 89108118 A TW89108118 A TW 89108118A TW 449819 B TW449819 B TW 449819B
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Taiwan
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wafer
cleaning
solution
nmp
station
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TW89108118A
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Chinese (zh)
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Shiou-Ju Shie
Jian-Ping Hung
Jr-Cheng Shia
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United Microelectronics Corp
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Abstract

The present invention provides a semiconductor wafer cleaning system to remove the stain inked n the surface of the semiconductor wafer. The cleaning system comprises the first cleaning station, the second cleaning station and a drying station. The ink stain is dissolved by N-methyl-pyrolidone solution in the way of emerging and spinning in the first cleaning station. The surface of the wafer is washed by a cleaning solution in a spinning way in the second cleaning station after the processing of the first cleaning station. The wafer processed by the second cleaning station is blown dry to be matched with gas in a way of spinning dry in the drying station to remove the residual cleaning solution on the surface of the wafer.

Description

^4981 9" i五,發明說明(υ 發明之領域 i 本發明提供一種半導體晶圓的清洗系統,尤指一種用 I來去除打印在半導體晶圓表面的墨潰的清洗系統。 ί背景說明 I 在積體電路(Integrated circuit, 1C)工業令,為了 I使主動元件(active device)能夠適當發揮預期設計的功 I能,一般使用陶瓷(ceramic)或塑膠(plastic)在積體電路 I的外層加以封裝,封裝後之晶片始銷售至市場。而晶片經 封裝(P a c k a g e )前,需對晶圓上每一個晶片進行各項電性 丨功能之測試,以保證出廠1C功能上的完整性。由於一般晶 丨片製造廠與晶片封裝廠係不同廠商或甚至在不同地域、國 :家進行,因此目前半導體業界常使用墨水_在晶片表面打印 的方式,用來標記未通過電性測試之晶片(d e f e c t i v e I d i e ),以利後續封裝廠進行封裝時能清楚分辨電性功能測 i :試結果良好之晶片,避免造成封裝成本的浪費。 目前業界於晶片經電性測試後加以標記之作業多以自 :動化流程來執行。自動化流程係利用一控制單元預先内設 丨之程式,判別電性不符標準之晶片並加以打印,使後續封 |裝廠能正確篩選有瑕疵之晶片並加以淘汰,避免封裝有瑕 i疵之晶片而增加成本。然而,自動化流程的作業中有時可^ 4981 9 &5; Description of the Invention (υ Field of Inventioni) The present invention provides a cleaning system for semiconductor wafers, especially a cleaning system that uses I to remove ink breaks printed on the surface of a semiconductor wafer. Background In the integrated circuit (1C) industrial order, in order to enable the active device to properly perform the function of the intended design, ceramic or plastic is generally used on the outer layer of the integrated circuit I After encapsulation, the packaged wafers are sold to the market. Before the wafers are packaged, each electrical chip on the wafer must be tested for electrical functions to ensure the integrity of the factory 1C function. Because general wafer manufacturing plants and wafer packaging plants are carried out by different manufacturers or even in different regions, countries, and homes, the current semiconductor industry often uses ink _ printed on the surface of the wafer to mark wafers that have failed electrical tests. (Defective I die), in order to facilitate the subsequent packaging factory can clearly distinguish the electrical function test i: chips with good test results to avoid manufacturing It is a waste of packaging cost. At present, most of the operations in the industry to mark chips after electrical testing are performed by automated processes. The automated process uses a program built-in in a control unit to identify chips that do not meet electrical standards. And print it, so that the subsequent packaging | assembly factory can correctly screen defective wafers and eliminate them, to avoid packaging defective wafers and increase costs. However, sometimes it can be

第4頁 I五、發明說明(2) 能因機台發生故障或是控制單元内電性測試之内建程式有 問題,造成印._時有緩__誤.#生。例如可能因打印針腳有位 移或偏差,造成每一個晶片上標記資料亦隨之位移而不正 確,此時便無法提供正確資訊予封裝廠商。另外,由於晶 片廠商可能對每一批產品的電性功能需求不一,在預設程 式中需輸入的電性標準即有不同,而打印機台僅單純以符 |不符合此標準來決定標記與否,所以當客戶要求更改電性 |標準時,即需重新一一進行測試並更改程式,此時先前之 :標記必須加以去除並打上重新測試後之標記.。 1 ! 在前述問題發生時,晶片上之打印記號即有錯誤需加 1以去除。由於目前此項晶圓清洗製程並無自動化作業之設 丨 備,因此習知方法係以人工方式進行晶片之清洗。一般清 I t i洗方式是操作員利用丙酮(acetone)作為清洗劑,直接以 | I手執海錦刷洗晶圓之表面,利用丙酮對該墨印的溶解力來 i I去除晶圓表面的墨潰。這種以人^___清_洗_晶_圓表面的方式, i不但需要大量的清洗劑不停地沖洗,且需耗費許多人力資 源,非常不符經濟成本與效率之考量。且丙酮係含有化學 i成分之清洗劑,可能對人體手部或其他接觸清洗劑之部分 丨產生傷害,將對操作者的健康造成影響。另一方面,由於 丨 | ; ::每個人刷洗晶圓過程中控制的力量大小與著力點位置皆不 一致,可能導致晶圓的外觀品質受到不良影響,甚至有可Page 4 I. V. Description of the invention (2) It is possible that the machine is malfunctioning or there is a problem with the built-in program of the electrical test in the control unit. For example, there may be displacement or deviation of the print pins, which causes the mark data on each chip to be displaced accordingly. In this case, the correct information cannot be provided to the package manufacturer. In addition, because chip manufacturers may have different electrical functional requirements for each batch of products, the electrical standards that need to be entered in the preset program are different, and the printer station simply uses the character | No, so when the customer requests to change the electrical | standard, it is necessary to test and change the program one by one. At this time, the previous: mark must be removed and marked with the retest. 1! When the aforementioned problem occurs, there is an error in the printed mark on the wafer that needs to be added to 1 to remove it. Because there is no automatic equipment for this wafer cleaning process, the conventional method is to manually clean the wafer. The general cleaning method is that the operator uses acetone as the cleaning agent, and directly cleans the surface of the wafer with the | I hand brocade, and uses the dissolving power of acetone to the ink to remove the ink on the wafer surface. Collapse. This method of cleaning the surface of a person ____ cleans round surfaces, which not only requires a large number of cleaning agents to be constantly washed, but also consumes many human resources, which is very inconsistent with economic cost and efficiency considerations. In addition, acetone is a cleaning agent containing chemical component I, which may cause harm to human hands or other parts that come into contact with the cleaning agent, and will affect the health of the operator. On the other hand, because the amount of force and the position of the point of control during the wafer scrubbing process are not the same for everyone, it may cause the appearance quality of the wafer to be adversely affected, or even possible.

I |能在人工刷洗的過程中因施力不當造成晶圓内部已製作完 |成元件之電性功能的破壞,進而影.響製程之良率。I | In the process of manual brushing, due to improper application of force, the inside of the wafer has been completed. The electrical function of the component is destroyed, which affects the yield of the process.

第5頁 449819 - 五、發明說明(3) iPage 5 449819-V. Description of Invention (3) i

I i i 發明概述 因此本發明之主要目的在提供一種半導體晶圓的清洗 系統,用來去除打印在半導體晶圓表面的墨潰,以解決上 述習知技術之問題。 | !I i i SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to provide a cleaning system for semiconductor wafers, which is used to remove ink breaks printed on the surface of semiconductor wafers, so as to solve the problems of the conventional techniques. |!

I 在本發明提供之實施例中,該清洗系統包含有一第一 I清洗站、一第二清洗站以及一乾燥站。該第一清洗站利用 ) ; :一浸泡旋轉的方式,以N -甲基咯酮 丨(N-Methyi-Pyrolidone, NMP )溶液來溶解該晶圓表面的墨 丨 潰。該第二清洗站利用一旋轉的方式,以一清洗溶液來沖 洗經該第一清洗站處理後之晶圓的表面。該乾燥站利用一 i旋乾(spin dry)的方式,並配合一氣體來吹乾經該第二清 I洗站處理後的晶圓,以去除該晶圓表面殘餘的清洗落液。 ! ! 本發明提供之清洗系統利用自動化之作業流程來進 :行,因此可以節省人力資源以及減少清洗劑的消耗,且不 | !易造成對晶圓外觀或晶圓内部元件的影響,可以確保清洗 | \ ! 丨製程之品質。 發明之詳細說明 請參考圖一,圖一為本發明利用浸泡旋轉方式溶解晶In the embodiment provided by the present invention, the cleaning system includes a first I cleaning station, a second cleaning station, and a drying station. The first cleaning station utilizes an N-Methyi-Pyrolidone (NMP) solution to dissolve the ink on the wafer surface in an immersion and rotation manner. The second cleaning station uses a rotating method to rinse the surface of the wafer processed by the first cleaning station with a cleaning solution. The drying station uses a spin dry method and cooperates with a gas to blow dry the wafer processed by the second cleaning station to remove the residual cleaning liquid on the wafer surface. The cleaning system provided by the present invention uses an automated operation process to proceed: therefore, it can save human resources and reduce the consumption of cleaning agents, and does not easily affect the appearance of the wafer or the internal components of the wafer, which can ensure that Cleaning | \! 丨 The quality of the process. Detailed description of the invention Please refer to FIG. 1. FIG.

第6頁 449819 五、發明說明(4) 圓表面墨潰之示意圖。如圖一所示,本發明用來去除打印 在半導體晶圓1 8表面墨潰之清洗系統1 〇包含有一溶液槽 1 2,一可旋轉之基座1 4設於溶液槽1 2内部,一排放孔2 4設 於溶液槽1 2底部,以及一供應喷頭2 6,用來供應晶圓1 8清 |洗時所需的各種溶液。本發明之清洗方式係首先將表面上 I有墨印之晶圓18水平放置於基座14之上。基座14係以真空 i方式吸附晶圓18’使晶圓18能固定於基座12之上並隨基座 丨14旋轉。接著將溶液槽12内注滿N-甲基咯酮 丨(N-Methyl-Pyrolidone, NMP)溶液16並且淹蓋整片晶圓 1 8 ’使晶圓1 8得以浸泡於NMP溶液1 6中。此步驟主要是利 :用NMP溶液1 6來溶解晶圓1 8表面的墨潰。然後提供一動力 |於基座14與溶液槽12’使基座14以箭頭2 0之方向旋轉,而 :Ν Μ P溶液則以箭頭2 2之方向旋轉》盛裝於溶液槽1 2之Ν Μ P溶 |液1 6以一相反於基座1 4之方向流動的方式可增加晶圓1 8與 ΝΜΡ溶液1 6間之反應面積,加強ΝΜΡ溶液對晶圓1 8表面墨潰 的溶解速度。 ’^ aa圓1 8以旋轉浸泡的方式清洗經過一段時間後,接著 將溶液槽1 2内的NMP溶液1 6由排放孔24排掉。或者將基座 1 4設計成可以升高之設備,利用基座將晶圓升高至原浸泡 ;之NMP溶液16液面以上,以進行下一.道清洗步驟。請參考 ^ ’圖二為本發明利用旋轉沖洗晶圓表面之示意圖。此 時用來承載晶圓1 8的基座1 4繼續以箭頭2 〇的方向旋棘,邗 :且自供應嘴頭26喷激-清洗溶液來沖洗經前述 449819 丨五、發明說明¢5) 丨之晶圓的表面。清洗溶液可以仍使用曱基咯酮(NMP)溶 液或使用丙酮(Acetone)溶液來沖洗。接著再由供應喷頭 2 6向晶圓18表面喷灑去離子水(DI water)。此步驟主要用 I來去除殘餘於晶圓18表面的雜質或墨潰。 | I 請參考圖三,圖三為本發明利用旋乾方式乾燥晶圓表 |面之示意圖。在此步驟中用來承載晶圓1 8的基座1 4繼續以 i箭頭2 0的方向旋轉,並且自供應喷頭2 6提供一乾燥空氣或 1氣。亦即利用一旋乾(spin dry)的方式,並配合一氣體 i來吹乾清洗後的晶圓18,以去除晶圓18表面殘餘的清洗溶 液或去離子水,確保晶圓1 8的乾燥,以免水氣影響晶圓内 I部元件之電性。此時晶圓1 8表面的墨潰已完全去除,可以Page 6 449819 V. Description of the invention (4) Schematic diagram of ink collapse on a round surface. As shown in FIG. 1, the cleaning system 10 for removing ink rupture printed on the surface of a semiconductor wafer 18 according to the present invention includes a solution tank 12, a rotatable base 14 provided inside the solution tank 12, a The discharge hole 24 is provided at the bottom of the solution tank 12 and a supply nozzle 26 is used to supply various solutions required for cleaning the wafer 18. In the cleaning method of the present invention, first, a wafer 18 having an ink mark on the surface is horizontally placed on the base 14. The base 14 sucks the wafer 18 'in a vacuum i mode so that the wafer 18 can be fixed on the base 12 and rotated with the base 14. Then, the solution tank 12 is filled with N-Methyl-Pyrolidone (NMP) solution 16 and the entire wafer 18 is covered so that the wafer 18 can be immersed in the NMP solution 16. This step is mainly beneficial: the NMP solution 16 is used to dissolve the ink on the surface of the wafer 18. Then provide a power | rotate the base 14 in the direction of the arrow 20 on the base 14 and the solution tank 12 ', and: the NM P solution is rotated in the direction of the arrow 22 ", which is contained in the NM of the solution tank 12 The P solution | liquid 16 can increase the reaction area between the wafer 18 and the NMP solution 16 by flowing in a direction opposite to the direction of the base 14 and strengthen the dissolution rate of the NMP solution on the surface of the wafer 18. After a period of time, the circle 18 was cleaned by spin soaking, and then the NMP solution 16 in the solution tank 12 was drained through the drain hole 24. Or the susceptor 14 is designed as a device that can be raised, and the susceptor is used to raise the wafer to the original immersion; the NMP solution is above the liquid level 16 for the next cleaning step. Please refer to ^ 'FIG. 2 is a schematic diagram of rinsing the wafer surface by spin in the present invention. At this time, the susceptor 14 for carrying the wafer 18 continues to spin the spine in the direction of the arrow 20, and the spray nozzle-washing solution is sprayed from the supply nozzle 26 to rinse the above-mentioned 449819. V. Description of the invention ¢ 5)丨 the surface of the wafer. The cleaning solution can still be rinsed with fluorenone (NMP) solution or acetone (Acetone) solution. Next, DI water is sprayed onto the surface of the wafer 18 from the supply nozzle 26. In this step, I is mainly used to remove impurities or ink residues remaining on the surface of the wafer 18. I Please refer to Figure 3. Figure 3 is a schematic diagram of the wafer surface drying by spin-drying method of the present invention. In this step, the susceptor 14 for carrying the wafer 18 continues to rotate in the direction of the i arrow 20, and a dry air or an air is provided from the supply nozzle 26. That is, a spin dry method and a gas i are used to blow dry the cleaned wafer 18 to remove the residual cleaning solution or deionized water on the surface of the wafer 18 to ensure the drying of the wafer 18 In order to prevent water vapor from affecting the electrical properties of the I components in the wafer. At this time, the ink rupture on the surface of the wafer 18 has been completely removed.

I i重新進行電性測試並打上新的標記。 1 此外,上述本發明之最佳實施例係將所有步驟於同一 !溶液槽1 2中進行,可以節省設備之成本。然若為因應不同 I製程或設備需求,亦可於清洗系統内設置三個化學站’分 I別於不同之溶液槽中利用不同溶液的供應噴頭進行各項步 :驟。例如,第一清洗站利用一浸泡旋轉的方式,以NMP溶 i液來溶解該晶圓表面的墨潰。接著第二清洗站係利用一旋 :轉的方式,以一供應喷頭供應一清洗溶液來沖洗經該第一 i清洗站處理後之晶圓的表面。最後將晶圓送往一乾燥站, 丨利用一旋乾的方式,並配合一氣體供應裝置提供氣體來吹 乾經該第二清洗站處理後的晶圓,以去除該晶圓表面殘餘I i Perform the electrical test again and mark it with a new mark. 1 In addition, the above-mentioned preferred embodiment of the present invention performs all steps in the same solution tank 12 to save equipment costs. However, in order to meet the requirements of different processes or equipment, three chemical stations can be set in the cleaning system, which can be used for different steps in different solution tanks using different supply nozzles. For example, the first cleaning station uses an immersion rotation method to dissolve ink collapse on the wafer surface with NMP solution. Then, the second cleaning station uses a rotation: rotation method to supply a cleaning solution with a supply nozzle to rinse the surface of the wafer processed by the first i cleaning station. Finally, the wafer is sent to a drying station. 丨 A spin-drying method is used, and a gas supply device is used to provide gas to blow dry the wafer processed by the second cleaning station to remove the remaining residue on the wafer surface.

笫8頁 ^4981 9 ;五、發明說明(6) 丨 :的清洗溶液。此種清洗系統亦可達到同樣對半導體晶圓清 |笫 Page 8 ^ 4981 9; V. Description of the invention (6) 丨: Cleaning solution. This cleaning system can also achieve the same cleaning of semiconductor wafers |

; I 丨洗之功效。 丨 I !; I 丨 washing effect.丨 I!

II

I I 本發明所提供之半導體晶圓清洗系統,主要利用自動 j r i化之作業流程來去除打印在晶圓表面的墨潰。習知使用人 I 丨工刷洗晶圓的方式相當不經濟且耗費人力,相對地,本發 i 明提供之系統可以將所有步驟綜合於一溶液槽内,僅需利 丨 用供應噴頭提供不同的清洗溶液即可進行各項步驟。溶液 i槽内的清洗溶液可重複循環使用或用來清洗多片晶圓,不 I 但可以減少清洗劑的消耗,亦可節省人力資源。且本發明 ; 主要使用之清洗劑係以NMP落液為主,相較於習知所使用 :之丙酮更能去除晶圓表面之墨潰,然習知方法受限於ΝΜΡ ΐ :溶液比丙酮對人體可能造成更大傷害,無法使用人工直接 :以ΝΜΡ溶液刷洗晶圓,而本發明所有_步驟皆以自動化流程 丨I I The semiconductor wafer cleaning system provided by the present invention mainly uses an automatic jr iization process to remove ink breaks printed on the wafer surface. It is known that the method of using a user to clean the wafer is relatively uneconomical and labor-intensive. In contrast, the system provided by the present invention can integrate all steps in a solution tank, and only needs to use the supply nozzle to provide different The washing solution is ready for each step. The cleaning solution in the solution i tank can be reused repeatedly or used to clean multiple wafers. Not only can I reduce the consumption of cleaning agents, but also save human resources. And the present invention; the main cleaning agent is mainly NMP falling liquid, compared with the conventionally used: acetone can remove the ink on the wafer surface, but the conventional method is limited by NMP ΐ: the solution is more than acetone May cause greater harm to the human body, can not be directly used by humans: the wafer is washed with NMP solution, and all _ steps of the present invention are automated processes 丨

I :加以控制不會有此顧慮,因此可以利用更有效的ΝΜΡ溶液 | 來進行清洗。此外,本發明利用浸泡旋轉、沖洗、旋乾等 步驟清洗晶圓,接觸晶圓表面者皆是水流或氣體,再加上 基座均勻地旋轉晶圓,使晶圓受到的水流或氣流之沖洗力 量相當均勻一致,因此不易造成對晶圓外觀或晶圓内部元 I : 件的影響,可以確保清洗製程之品質。 丨 相較於習知清洗半導體晶圓表面墨潰的方法,本發明 :提供之清洗系統利用自動化之作業流程來進行,因此可以 :節省人力資源以及減少清洗劑的消耗,且不易造成對晶圓I: There is no such concern when it is controlled, so a more effective NMP solution can be used for cleaning. In addition, in the present invention, the wafer is cleaned by steps such as immersion rotation, rinsing, spin-drying, etc., the water or gas that contacts the wafer surface, and the wafer is evenly rotated by the susceptor, so that the wafer is washed by the water or airflow The force is quite uniform, so it is not easy to affect the appearance of the wafer or the internal components of the wafer, which can ensure the quality of the cleaning process.丨 Compared with the conventional method for cleaning the ink on the surface of a semiconductor wafer, the present invention: The provided cleaning system is performed using an automated operation process, so it can: save human resources and reduce the consumption of cleaning agents, and it is not easy to cause wafer damage

第9頁 449819 :五、發明說明σ) 外觀或晶圓内部元件的影響,可以確保清洗製程之品質。 ί 以上所述僅本發明之較佳實施例,凡依本發明申請專Page 9 449819: V. Description of the invention σ) The appearance or the influence of the internal components of the wafer can ensure the quality of the cleaning process. The above is only the preferred embodiment of the present invention.

I 利範圍所做之均等變化與修飾,皆應屬本發明專利之涵蓋 範圍。 4 4 9 81-9 i圖式簡單說明 圖示之簡單說明 | 圖一為本發明利用浸泡旋轉方式溶解晶圓表面墨潰之 |示意圖。 i 圖二為本發明利用旋轉沖洗晶圓表面之示意圖。 ! 圖三為本發明利用旋乾方式乾燥晶圓表面之示意圖。 圖示之符號說明 10 清洗系統 12 溶液槽 14 基座 16 NMP溶液 18 晶圓 20 旋轉方向 22 旋轉方向 24 排放孔 26 供應噴頭All equal changes and modifications made within the scope of the invention shall fall within the scope of the invention patent. 4 4 9 81-9 i Simple illustration of the diagram Simple illustration of the diagram | Figure 1 is a schematic diagram of dissolving ink on the wafer surface by immersion rotation in the present invention. i FIG. 2 is a schematic diagram of washing the wafer surface by spin in the present invention. Figure 3 is a schematic diagram of drying the wafer surface by a spin-drying method according to the present invention. Explanation of symbols in the diagram 10 Cleaning system 12 Solution tank 14 Base 16 NMP solution 18 Wafer 20 Rotation direction 22 Rotation direction 24 Drain hole 26 Supply nozzle

第11頁Page 11

Claims (1)

449819 六、申請專利範園 1. 一種半導體晶圓(wa f er )的清洗系統,用來去除打印 (i n k i n g)在半導體晶圓表面的墨潰,該清洗系統包含有: 一第一清洗站,該第一清洗站係利用一浸泡旋轉的方 式,以N-甲基洛酿I (N-Methyl-Pyrolidone,NMP)溶液來溶 解該晶圓表面的墨潰, 以一清洗溶液 面;以及 一乾燥站 式,並配合一 —第二清洗站,該第二清洗站係利用一旋轉的方式, 來沖洗經該第一清洗站處理後之晶圓的表 ,該乾燥站係利用一旋乾(spin dry)的方 氣體來吹乾經該第二清洗站處理後的晶圓 以去除該晶圓表面殘餘的清洗溶液。 靡 2. 如申請專利範圍第1項之潰」先.._系統,其中該第一清洗 站係包含有一溶液槽,用來盛裝該N-甲基咯酮(NMP)溶液 以浸泡該晶圓,以及一苐·一基座,用來固定並旋轉該晶 圓。 3. 如申請專利範圍第2項之清洗系統,其中盛裝於該溶 液槽之N~曱基咯酮(NMP)溶液係以一相反於該第一基座的 旋轉方向流動,以增加該晶圓與洗劑間之反應面積。 4. 如申請專利範圍第1項之清洗系統,其中該第二清洗 站係包含有一第二基座,用來固定並旋轉該晶圓,以及-第一供應裝置,用來喷灑一 N-曱基咯酮(NMP)溶液或丙酮449819 6. Application for patent Fan Yuan 1. A cleaning system for semiconductor wafers (wafer), which is used to remove ink breaks on the surface of semiconductor wafers. The cleaning system includes: a first cleaning station, The first cleaning station uses an immersion rotation method to dissolve the ink on the wafer surface with N-Methyl-Pyrolidone (NMP) solution, and a cleaning solution surface; and a drying Station, and cooperate with a second cleaning station. The second cleaning station uses a rotating method to rinse the surface of the wafer processed by the first cleaning station. The drying station uses a spin dry (spin) dry) square gas to blow dry the wafer processed by the second cleaning station to remove the residual cleaning solution on the wafer surface. 2. If the first item of the scope of the patent application fails, the "first .._" system, wherein the first cleaning station includes a solution tank for containing the N-methylpyrrolidone (NMP) solution to soak the wafer And a pedestal for fixing and rotating the wafer. 3. For example, the cleaning system of claim 2 in which the N ~ fluorenyl ketone (NMP) solution contained in the solution tank flows in a direction opposite to the rotation direction of the first base to increase the wafer. Reaction area with lotion. 4. The cleaning system according to item 1 of the patent application scope, wherein the second cleaning station includes a second base for fixing and rotating the wafer, and a first supply device for spraying an N- Fluorenyl ketone (NMP) solution or acetone 第12頁 449819 六、申請專利範圍 (Acetone)或去離子水(DI water),以去除殘餘於該晶圓 表面的墨潰。 5. 如申請專利範圍第1項之清洗系統,其中該乾燥站係 包含有一第三基座,用來固定並旋轉該晶圓,以及一第二 供應裝置,用來供應乾燥空氣或氮氣,以去除該晶圓表面 殘餘的清洗溶液。 6. 如申請專利範圍第1項之統,其中該第一、第 二清洗站以及乾燥站係為同一清洗裝置,該清洗裝置另包 含有一第四基座,用來固定並旋轉該晶圓,以及複數個第 三供應裝置,分別用來供應該NMP洗劑、清洗溶液以及該 氣體。 7. 一種半導體晶圓的清洗方法,用來去除打印在半導體 晶圓上之墨潰,該清洗方法包含有下列步驟: 將該晶圓固定於一旋轉基座上; 以NMP洗劑浸泡該晶圓; 以NMP洗劑沖洗該晶圓; 以去離子水喷洗該晶圓;以及 以氣體向該晶圓吹氣。 8. 如申請專利範圍第7項之清洗方法,其中承載該晶圓 之旋轉基座係設於一溶液槽内,該溶液槽包含有複數個供Page 12 449819 6. Apply for patent (Acetone) or deionized water (DI water) to remove the ink breakage remaining on the wafer surface. 5. The cleaning system according to item 1 of the patent application scope, wherein the drying station includes a third base for fixing and rotating the wafer, and a second supply device for supplying dry air or nitrogen to Remove the remaining cleaning solution on the wafer surface. 6. As described in the first patent application, the first and second cleaning stations and the drying station are the same cleaning device. The cleaning device further includes a fourth base for fixing and rotating the wafer. And a plurality of third supply devices for supplying the NMP lotion, the cleaning solution, and the gas, respectively. 7. A method for cleaning a semiconductor wafer, which is used to remove ink bursts printed on the semiconductor wafer. The cleaning method includes the following steps: fixing the wafer on a rotating base; soaking the crystal with NMP lotion Round; rinse the wafer with NMP detergent; spray-wash the wafer with deionized water; and blow the wafer with gas. 8. The cleaning method according to item 7 of the scope of patent application, wherein the rotating base carrying the wafer is set in a solution tank, and the solution tank contains a plurality of 第13頁 449819 六、申請專利範圍 應裝置,分別用來供應NMP洗劑、去離子水以及該氣體, 以及一排放孔,用來排放沖泡後之NMP洗劑或去離子水。 9. 如申請專利範圍第7項之清洗方法,其中該旋轉基座 係以真空方式吸附該晶圓。 1 0 .如申請專利範圍第8項之清洗方法,其中該氣體為乾Page 13 449819 6. Scope of patent application The device should be used to supply NMP lotion, deionized water and the gas, and a drain hole to discharge the brewed NMP lotion or deionized water. 9. The cleaning method according to item 7 of the patent application scope, wherein the rotating base absorbs the wafer in a vacuum manner. 10. The cleaning method according to item 8 of the scope of patent application, wherein the gas is dry 第14頁Page 14
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109860024A (en) * 2019-01-04 2019-06-07 山东天岳先进材料科技有限公司 A kind of clean method reducing wafer surface granularity
CN114247685A (en) * 2021-12-17 2022-03-29 张家港声芯电子科技有限公司 Chip cleaning device and cleaning method
CN115338156A (en) * 2022-08-16 2022-11-15 彩虹(合肥)液晶玻璃有限公司 Glass substrate surface liquid washing cleaning mechanism

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109860024A (en) * 2019-01-04 2019-06-07 山东天岳先进材料科技有限公司 A kind of clean method reducing wafer surface granularity
CN109860024B (en) * 2019-01-04 2022-07-08 山东天岳先进科技股份有限公司 Cleaning method for reducing granularity of wafer surface
CN114247685A (en) * 2021-12-17 2022-03-29 张家港声芯电子科技有限公司 Chip cleaning device and cleaning method
CN114247685B (en) * 2021-12-17 2022-12-20 张家港声芯电子科技有限公司 Chip cleaning device and cleaning method
CN115338156A (en) * 2022-08-16 2022-11-15 彩虹(合肥)液晶玻璃有限公司 Glass substrate surface liquid washing cleaning mechanism
CN115338156B (en) * 2022-08-16 2023-10-03 彩虹(合肥)液晶玻璃有限公司 Glass substrate surface liquid washing and cleaning mechanism

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