US6539960B1 - Cleaning system for cleaning ink in a semiconductor wafer - Google Patents

Cleaning system for cleaning ink in a semiconductor wafer Download PDF

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Publication number
US6539960B1
US6539960B1 US09/562,851 US56285100A US6539960B1 US 6539960 B1 US6539960 B1 US 6539960B1 US 56285100 A US56285100 A US 56285100A US 6539960 B1 US6539960 B1 US 6539960B1
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United States
Prior art keywords
wafer
cleaning
ink
solution
tank
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Expired - Lifetime
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US09/562,851
Inventor
Hsiu-Chu Hsieh
Jason Horng
Jason Hsia
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United Microelectronics Corp
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United Microelectronics Corp
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Publication date
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Priority to US09/562,851 priority Critical patent/US6539960B1/en
Assigned to UNITED MICROELECTRONICS CORP. reassignment UNITED MICROELECTRONICS CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HORNG, JASON, HSIA, JASON, HSIEH, HSIU-CHU
Priority to US09/683,471 priority patent/US6565670B2/en
Application granted granted Critical
Publication of US6539960B1 publication Critical patent/US6539960B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Definitions

  • the present invention relates to a cleaning system for cleaning a semiconductor wafer, and more particularly, to a cleaning system used to remove ink from the surface of a semiconductor wafer.
  • ceramic or plastic packaging material is typically used to wrap and protect the semiconductor die.
  • certain electrical property tests are performed first by a wafer manufacturer in order to ensure the quality of the wafer. But since the wafer manufacturer and the wafer packaging company are usually not located at the same factory, the wafer manufacturer usually uses ink to mark each defective die of each wafer, and the wafer packaging company will only package good dies when they receive such inked wafers.
  • the inking process is usually performed in an automatic testing procedure in the present semiconductor industry.
  • the automatic testing procedure uses a testing program installed in a control unit to decide which die fails the electrical test and then uses ink to mark it.
  • the testing machine used in such automatic testing procedure may sometimes become inaccurate or the testing program may use wrong testing parameters so that the marks inked by the testing machine are totally wrong.
  • the ink head may deviate from its normal position and marks on wrong dies
  • the ink on the surface of the wafer is manually washed off using sponge and acetone.
  • the acetone is used as a cleaning solution to dissolve the ink on the surface of a wafer and the sponge is used to manually scrub off the dissolved ink from the surface of the wafer.
  • a lot of cleaning solution is wasted in such process because the operator has to use the solution to flush the surface of the wafer continually.
  • such process is very time-consuming and unpleasant to the operator because of the exposure to the acetone. Its efficiency is very low and the manual force exerted to the surface of the wafer may easily cause serious damage to the wafer.
  • the cleaning system comprises a first cleaning mode of operation, a second cleaning mode of operation and a drying mode of operation.
  • the first cleaning mode of operation uses an N-Methyl-Pyrolidone (NMP) solution over which the wafer is submerged and spun to dissolve the ink on its surface.
  • NMP N-Methyl-Pyrolidone
  • the second cleaning mode of operation spins the wafer and sprays a cleaning solution on the surface of the wafer.
  • the drying mode of operation then removes the residue from the surface of the wafer by spinning the wafer and using a gas to blow the surface of the wafer.
  • the present invention provides an automatic cleaning procedure to perform the ink cleaning process.
  • the man power can be saved and wastes of cleaning solutions can also be reduced.
  • the surface of each wafer can be cleaned in a much safer manner.
  • FIG. 1 is a schematic diagram showing a wafer submerged and spun in an NMP solution to dissolve the ink on its surface according to the present invention.
  • FIG. 2 is a schematic diagram showing a wafer spun and sprayed with a cleaning solution according to the present invention.
  • FIG. 3 is a schematic diagram showing a wafer spun and blown with a gas according to the present invention.
  • FIG. 1 is a schematic diagram showing that a wafer is submerged and spun to dissolve the ink on its surface according to the present invention.
  • the cleaning system 10 comprises a tank 12 , a spin chuck 14 positioned inside the tank 12 , an outlet 24 positioned on the bottom of the tank 12 , and a supply device 26 used to provide a cleaning solution to clean the wafer 18 .
  • the wafer 18 with ink on its surface is horizontally placed on the chuck 14 .
  • a vacuum system is then used to secure the wafer 18 to the chuck 14 when the wafer 18 is spun with the chuck 14 .
  • the tank 12 is filled with an N-Methyl-Pyrolidone (NMP) solution 16 and the whole wafer 18 is submerged into the NMP solution 16 .
  • NMP N-Methyl-Pyrolidone
  • the NMP solution is used to dissolve the ink on the surface of the wafer 18 .
  • the chuck 14 spins along a first spinning direction 20 and the NMP solution 16 spins along a second spinning direction 22 opposite to the first spinning direction 20 in order to increase the dissolving speed of the ink.
  • the NMP solution 16 is released from the tank 12 via the outlet 24 .
  • the chuck 14 can be designed to lift up the wafer 18 above the surface of the NMP solution 16 in order to perform the next cleaning process.
  • FIG. 2 is a schematic diagram showing that the wafer 18 is spun and a cleaning solution is sprayed onto its surface according to the present invention.
  • the wafer 18 is still spun in the spinning direction 20 by the chuck 14 , and a cleaning solution is sprayed from the supply device 26 onto the surface of the wafer 18 .
  • the cleaning solution can be the NMP solution, or an acetone solution.
  • DI de-ionized
  • FIG. 3 is a schematic diagram showing that a wafer is spun and a gas is blown over its surface according to the present invention.
  • the wafer 18 is spun in the spinning direction 20 by the chuck 14 , and dry air or nitrogen is blown from the supply device 26 over the surface of the wafer 18 to remove residual cleaning solution or DI water.
  • the preferred embodiment of the present invention shown above performs all the cleaning steps in one tank 12 .
  • it can also be designed to use three tanks to perform the above-mentioned cleaning steps.
  • the first cleaning mode of operation is performed in a first tank to use the NMP solution to dissolve the ink on the surface of the semiconductor wafer.
  • the second cleaning mode of operation is performed in a second tank to use another cleaning solution to clean the wafer after the wafer finishes the first cleaning process.
  • the drying mode of operation is performed in a third tank to remove residue from the surface of the wafer after the wafer finishes the second cleaning process.
  • the cleaning system according to the present invention provides an automatic cleaning procedures to remove ink on the surface of a wafer. Compared with the prior art manual method, its efficiency is much better and will seldom cause physical damage to the surface of each wafer.
  • the cleaning solution used in the cleaning system of the present invention can easily be recycled or used to clean more wafers.
  • stronger cleaning solutions such as the NMP solution can be used in the present invention to remove the ink on the surface of the wafer. It is impossible to use the NMP solution in the prior art method because it is very harmful to human body or human hand.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention provides a cleaning system for removing ink from the surface of a semiconductor wafer. The cleaning system comprises a first cleaning station, a second cleaning station and a drying station. The first cleaning station spins the wafer and uses an N-Methyl-Pyrolidone (NMP) solution to dissolve the ink on the surface of the semiconductor wafer. The second cleaning station also spins the wafer and uses another cleaning solution to clean the ink off the surface of the wafer. The drying station spins the wafer and uses a gas to blow the surface of the wafer so as to remove residue from the surface of the wafer.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a cleaning system for cleaning a semiconductor wafer, and more particularly, to a cleaning system used to remove ink from the surface of a semiconductor wafer.
2. Description of the Prior Art
In integrated circuit industry, in order to make active devices on a semiconductor die function properly, ceramic or plastic packaging material is typically used to wrap and protect the semiconductor die. Before a wafer is sent for package, certain electrical property tests are performed first by a wafer manufacturer in order to ensure the quality of the wafer. But since the wafer manufacturer and the wafer packaging company are usually not located at the same factory, the wafer manufacturer usually uses ink to mark each defective die of each wafer, and the wafer packaging company will only package good dies when they receive such inked wafers.
The inking process is usually performed in an automatic testing procedure in the present semiconductor industry. The automatic testing procedure uses a testing program installed in a control unit to decide which die fails the electrical test and then uses ink to mark it. However, the testing machine used in such automatic testing procedure may sometimes become inaccurate or the testing program may use wrong testing parameters so that the marks inked by the testing machine are totally wrong. For example, the ink head may deviate from its normal position and marks on wrong dies
When such problems occur, the ink on the surface of the wafer as to be removed. Presently the ink on such a wafer is manually washed off using sponge and acetone. The acetone is used as a cleaning solution to dissolve the ink on the surface of a wafer and the sponge is used to manually scrub off the dissolved ink from the surface of the wafer. A lot of cleaning solution is wasted in such process because the operator has to use the solution to flush the surface of the wafer continually. Besides, such process is very time-consuming and unpleasant to the operator because of the exposure to the acetone. Its efficiency is very low and the manual force exerted to the surface of the wafer may easily cause serious damage to the wafer.
SUMMARY OF THE INVENTION
It is therefore a primary objective of the present invention to provide a cleaning system which can remove ink from the surface of a semiconductor wafer so as to solve the above mentioned problems.
In an embodiment of the present invention, the cleaning system comprises a first cleaning mode of operation, a second cleaning mode of operation and a drying mode of operation. The first cleaning mode of operation uses an N-Methyl-Pyrolidone (NMP) solution over which the wafer is submerged and spun to dissolve the ink on its surface. The second cleaning mode of operation spins the wafer and sprays a cleaning solution on the surface of the wafer. The drying mode of operation then removes the residue from the surface of the wafer by spinning the wafer and using a gas to blow the surface of the wafer.
It is advantage of the present invention that the present invention provides an automatic cleaning procedure to perform the ink cleaning process. The man power can be saved and wastes of cleaning solutions can also be reduced. Furthermore, the surface of each wafer can be cleaned in a much safer manner.
These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment which is illustrated in the various figures and drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic diagram showing a wafer submerged and spun in an NMP solution to dissolve the ink on its surface according to the present invention.
FIG. 2 is a schematic diagram showing a wafer spun and sprayed with a cleaning solution according to the present invention.
FIG. 3 is a schematic diagram showing a wafer spun and blown with a gas according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
Please refer to FIG. 1. FIG. 1 is a schematic diagram showing that a wafer is submerged and spun to dissolve the ink on its surface according to the present invention. As shown in FIG. 1, the cleaning system 10 comprises a tank 12, a spin chuck 14 positioned inside the tank 12, an outlet 24 positioned on the bottom of the tank 12, and a supply device 26 used to provide a cleaning solution to clean the wafer 18. According to the present invention, the wafer 18 with ink on its surface is horizontally placed on the chuck 14. A vacuum system is then used to secure the wafer 18 to the chuck 14 when the wafer 18 is spun with the chuck 14. The tank 12 is filled with an N-Methyl-Pyrolidone (NMP) solution 16 and the whole wafer 18 is submerged into the NMP solution 16. The NMP solution is used to dissolve the ink on the surface of the wafer 18. During the cleaning process, the chuck 14 spins along a first spinning direction 20 and the NMP solution 16 spins along a second spinning direction 22 opposite to the first spinning direction 20 in order to increase the dissolving speed of the ink.
After the wafer 18 is cleaned in the NMP solution 16, the NMP solution 16 is released from the tank 12 via the outlet 24. The chuck 14 can be designed to lift up the wafer 18 above the surface of the NMP solution 16 in order to perform the next cleaning process.
Please refer to FIG. 2. FIG. 2 is a schematic diagram showing that the wafer 18 is spun and a cleaning solution is sprayed onto its surface according to the present invention. The wafer 18 is still spun in the spinning direction 20 by the chuck 14, and a cleaning solution is sprayed from the supply device 26 onto the surface of the wafer 18. The cleaning solution can be the NMP solution, or an acetone solution. And then de-ionized (DI) water is sprayed from the supply device 26 onto the surface of the wafer 18 to remove residues or inks on the surface of the wafer 18.
Please refer to FIG. 3. FIG. 3 is a schematic diagram showing that a wafer is spun and a gas is blown over its surface according to the present invention. The wafer 18 is spun in the spinning direction 20 by the chuck 14, and dry air or nitrogen is blown from the supply device 26 over the surface of the wafer 18 to remove residual cleaning solution or DI water.
The preferred embodiment of the present invention shown above performs all the cleaning steps in one tank 12. However, it can also be designed to use three tanks to perform the above-mentioned cleaning steps. For example, the first cleaning mode of operation is performed in a first tank to use the NMP solution to dissolve the ink on the surface of the semiconductor wafer. The second cleaning mode of operation is performed in a second tank to use another cleaning solution to clean the wafer after the wafer finishes the first cleaning process. The drying mode of operation is performed in a third tank to remove residue from the surface of the wafer after the wafer finishes the second cleaning process.
The cleaning system according to the present invention provides an automatic cleaning procedures to remove ink on the surface of a wafer. Compared with the prior art manual method, its efficiency is much better and will seldom cause physical damage to the surface of each wafer. The cleaning solution used in the cleaning system of the present invention can easily be recycled or used to clean more wafers. In addition, since the hand-washing procedure is totally eliminated, stronger cleaning solutions such as the NMP solution can be used in the present invention to remove the ink on the surface of the wafer. It is impossible to use the NMP solution in the prior art method because it is very harmful to human body or human hand.
Those skilled in the art will readily observe that numerous modifications and alterations of the device may be made while retaining the teaching of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims (1)

What is claimed is:
1. A cleaning system used to remove ink from the surface of a semiconductor wafer and the modes of operation thereof, the cleaning system comprising a tank, a spin chuck positioned inside the tank to secure and spin the wafer, a supply device for injecting fluids into the tank, and an outlet positioned on the bottom of the tank for draining the fluids between the modes of operation, the modes of operation of the cleaning system comprising:
a first cleaning mode of operation with an N-Methyl-Pyrolidone (NMP) solution, the wafer being submerged in the NMP solution and spun to dissolve the ink on the surface of the semiconductor wafer;
a second cleaning mode of operation with a cleaning solution, the wafer being spun and the cleaning solution being sprayed onto the spinning surface of the wafer after the wafer has been processed by the first cleaning mode; and
a drying mode of operation for removing residue from the surface of the wafer after the wafer has been processed by the second cleaning mode of operation, the wafer being spun to spin dry the wafer and a gas being blown over the spinning surface of the wafer to facilitate drying of the wafer.
US09/562,851 2000-05-01 2000-05-01 Cleaning system for cleaning ink in a semiconductor wafer Expired - Lifetime US6539960B1 (en)

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US09/562,851 US6539960B1 (en) 2000-05-01 2000-05-01 Cleaning system for cleaning ink in a semiconductor wafer
US09/683,471 US6565670B2 (en) 2000-05-01 2002-01-03 Method of removing ink from a semiconductor wafer

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150147883A1 (en) * 2013-11-22 2015-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP Cleaning and Apparatus for Performing the Same
CN105845547A (en) * 2015-01-15 2016-08-10 中芯国际集成电路制造(上海)有限公司 Semiconductor device and preparation method thereof, and electronic apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003900535A0 (en) * 2003-02-07 2003-02-20 Close The Loop Technologies Pty Ltd Method and apparatus for recovering ink from inkjet cartridges
JP2008086914A (en) * 2006-10-02 2008-04-17 Shiga Yamashita:Kk Device for removing water from workpiece

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US4557785A (en) * 1983-06-29 1985-12-10 Fujitsu Limited Apparatus for wet processing
JPH0590239A (en) * 1991-09-30 1993-04-09 Fujitsu Ltd Cleaning method and cleaning device
US5913981A (en) * 1998-03-05 1999-06-22 Micron Technology, Inc. Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall
US5996241A (en) * 1994-04-28 1999-12-07 Semitool, Inc. Semiconductor wafer processing system with immersion module
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US6015467A (en) * 1996-03-08 2000-01-18 Tokyo Ohka Kogyo Co., Ltd. Method of removing coating from edge of substrate
US6045624A (en) * 1996-09-27 2000-04-04 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US6235147B1 (en) * 1998-09-29 2001-05-22 Samsung Electronics Co. Ltd. Wet-etching facility for manufacturing semiconductor devices
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6287023B1 (en) * 1997-09-22 2001-09-11 Tokyo Electron Limited Processing apparatus and method
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates

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US5334331A (en) * 1993-01-12 1994-08-02 Isp Investments Inc. Method of activating N-methyl-2-pyrrolidone (NMP) varnish and paint remover solvents for removal of organic coatings

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Publication number Priority date Publication date Assignee Title
US4557785A (en) * 1983-06-29 1985-12-10 Fujitsu Limited Apparatus for wet processing
JPH0590239A (en) * 1991-09-30 1993-04-09 Fujitsu Ltd Cleaning method and cleaning device
US5996241A (en) * 1994-04-28 1999-12-07 Semitool, Inc. Semiconductor wafer processing system with immersion module
US6015467A (en) * 1996-03-08 2000-01-18 Tokyo Ohka Kogyo Co., Ltd. Method of removing coating from edge of substrate
US6045624A (en) * 1996-09-27 2000-04-04 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US5997653A (en) * 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6287023B1 (en) * 1997-09-22 2001-09-11 Tokyo Electron Limited Processing apparatus and method
US5913981A (en) * 1998-03-05 1999-06-22 Micron Technology, Inc. Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall
US6235147B1 (en) * 1998-09-29 2001-05-22 Samsung Electronics Co. Ltd. Wet-etching facility for manufacturing semiconductor devices
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150147883A1 (en) * 2013-11-22 2015-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP Cleaning and Apparatus for Performing the Same
CN105845547A (en) * 2015-01-15 2016-08-10 中芯国际集成电路制造(上海)有限公司 Semiconductor device and preparation method thereof, and electronic apparatus

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US6565670B2 (en) 2003-05-20
US20020050282A1 (en) 2002-05-02

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