CN112951706A - Method for removing residual glue on surface of semiconductor - Google Patents
Method for removing residual glue on surface of semiconductor Download PDFInfo
- Publication number
- CN112951706A CN112951706A CN201911170100.8A CN201911170100A CN112951706A CN 112951706 A CN112951706 A CN 112951706A CN 201911170100 A CN201911170100 A CN 201911170100A CN 112951706 A CN112951706 A CN 112951706A
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- Prior art keywords
- semiconductor
- treated
- soaking
- nmp
- residual glue
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for removing residual glue on the surface of a semiconductor, which comprises the following steps: (1) soaking a semiconductor to be treated in NMP for at least 10 min; (2) placing the semiconductor treated in the step (1) in deionized water, soaking for 15-60 min, taking out and drying; (3) and (3) placing the semiconductor treated in the step (2) in ethanol at 50-60 ℃, soaking for 15-30 min, taking out, and drying to obtain the treated semiconductor. The semiconductor to be treated is firstly placed in NMP to clean organic impurities, colloid and wax on the surface of the semiconductor, then is placed in deionized water to be rinsed, NMP solvent, chemical liquid medicine residues and particle impurities are further removed, and finally the semiconductor is placed in ethanol to further remove the chemical liquid medicine residues and the particle impurities on the surface of the semiconductor. The semiconductor impurity treated by the method has good cleaning effect and can meet the requirement of recovery.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing residual glue on the surface of a semiconductor.
Background
A large number of unqualified products can be produced due to misoperation in the process of assembling electronic products, the unqualified products can be reassembled through reworking under the condition of no quality problem, semiconductor products are cleaned again through reassembling, the original cleaning method is very rough and is generally treated by heated acetone or isopropanol, and the defects that gas volatilization during cleaning has harm to human bodies, the ignition point is low, the ignition is easy, semiconductors cannot be cleaned effectively, and the requirements for emission reduction green production are not met. How to recycle the semiconductor and efficiently clean it in batch to remove the photoresist is a problem that needs to be solved at present.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method for removing residual glue on the surface of a semiconductor.
In order to achieve the purpose, the invention adopts the technical scheme that: a method for removing residual glue on the surface of a semiconductor comprises the following steps:
(1) soaking a semiconductor to be treated in NMP for at least 10 min;
(2) placing the semiconductor treated in the step (1) in deionized water, soaking for 15-60 min, taking out and drying;
(3) and (3) placing the semiconductor treated in the step (2) in ethanol at 50-60 ℃, soaking for 15-30 min, taking out, and drying to obtain the treated semiconductor.
The NMP solvent is an organic solvent extracted from petroleum, has a certain corrosiveness, and can effectively dissolve colloid and wax on the surface of a semiconductor and other organic impurities. The semiconductor to be treated is firstly placed in NMP to clean organic impurities, colloid and wax on the surface of the semiconductor, then is placed in deionized water to be rinsed, NMP solvent, chemical liquid medicine residues and particle impurities are further removed, and finally the semiconductor is placed in ethanol to further remove the chemical liquid medicine residues and the particle impurities on the surface of the semiconductor. The method can realize the batch recovery treatment of the semiconductors, and the semiconductor impurities treated by the method have good removal effect and can meet the recovery requirement.
In the step (1), the semiconductor to be treated is firstly soaked in NMP at 25-40 ℃ for 25-35 min, and then is soaked in NMP at 50-60 ℃ for 25-35 min at least once. The preferred method for soaking in NMP is to soak in NMP at a low temperature of 25-40 ℃ to mainly clean organic impurities, then soak in cleaning glue and wax at a high temperature of 50-60 ℃, and filter the wax and glue by using the NMP after the second use and recover the wax and glue.
In a preferred embodiment of the method for removing residual glue from a semiconductor surface according to the present invention, in the step (2), the drying is natural drying at room temperature.
In the preferred embodiment of the method for removing residual glue on the surface of the semiconductor, in the step (2), the temperature of the deionized water is 20-40 ℃.
As a preferred embodiment of the method for removing residual glue on the surface of the semiconductor, in the step (3), the drying is drying by using an air gun.
As a preferred embodiment of the method for removing residual glue from the surface of the semiconductor, the semiconductor to be processed is a semiconductor which is stripped and collected from unused and scrapped electronic products.
The invention has the beneficial effects that: the invention provides a method for removing residual glue on the surface of a semiconductor. The semiconductor to be treated is firstly placed in NMP to clean organic impurities, colloid and wax on the surface of the semiconductor, then is placed in deionized water to be rinsed, NMP solvent, chemical liquid medicine residues and particle impurities are further removed, and finally the semiconductor is placed in ethanol to further remove the chemical liquid medicine residues and the particle impurities on the surface of the semiconductor. The semiconductor impurity treated by the method has good cleaning effect and can meet the requirement of recovery.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
Example 1
In an embodiment of the method for removing residual glue from a semiconductor surface according to the present invention, the method for removing residual glue from a semiconductor surface includes the following steps:
(1) soaking a semiconductor to be treated in NMP at 35 ℃ for 30 min; then soaking in NMP at 55 deg.C for 30 min;
(2) placing the semiconductor treated in the step (1) in deionized water at 25 ℃, soaking for 30min, taking out, and naturally drying at room temperature;
(3) and (3) placing the semiconductor treated in the step (2) in ethanol at 55 ℃, soaking for 25min, taking out, and blowing the ethanol on the surface of the semiconductor by using an air gun to obtain the treated semiconductor.
By adopting the cleaning method, more than 99% of glue and organic impurities on the surface of the semiconductor can be cleaned, and the cleaned semiconductor can meet the requirement of recovery.
Example 2
In an embodiment of the method for removing residual glue from a semiconductor surface according to the present invention, the method for removing residual glue from a semiconductor surface includes the following steps:
(1) soaking a semiconductor to be treated in NMP at 25 ℃ for 35 min; then soaking in NMP at 50 deg.C for 35 min;
(2) placing the semiconductor treated in the step (1) in deionized water at 40 ℃, soaking for 15min, taking out, and naturally drying at room temperature;
(3) and (3) placing the semiconductor treated in the step (2) in ethanol at 60 ℃, soaking for 15min, taking out, and blowing the ethanol on the surface of the semiconductor by using an air gun to obtain the treated semiconductor.
By adopting the cleaning method, more than 99% of glue and organic impurities on the surface of the semiconductor can be cleaned, and the cleaned semiconductor can meet the requirement of recovery.
Example 3
In an embodiment of the method for removing residual glue from a semiconductor surface according to the present invention, the method for removing residual glue from a semiconductor surface includes the following steps:
(1) soaking a semiconductor to be treated in NMP at 40 ℃ for 25 min; then soaking in NMP at 60 deg.C for 25 min;
(2) placing the semiconductor treated in the step (1) in deionized water at 20 ℃, soaking for 60min, taking out, and naturally drying at room temperature;
(3) and (3) placing the semiconductor treated in the step (2) in ethanol at 50 ℃, soaking for 30min, taking out, and blowing the ethanol on the surface of the semiconductor by using an air gun to obtain the treated semiconductor.
By adopting the cleaning method, more than 99% of glue and organic impurities on the surface of the semiconductor can be cleaned, and the cleaned semiconductor can meet the requirement of recovery.
Comparative example 1
The method for removing the residual glue on the surface of the semiconductor is different from the method for removing the residual glue on the surface of the semiconductor in the embodiment 1 only in the difference of the step (1), and the step (1) of the comparative example is as follows: the semiconductor to be treated was immersed in NMP at 35 ℃ for 60 min. Tests show that the method of the comparative example can only clean about 90% of glue on the surface of the semiconductor, and cannot reach the standard of recycling.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (6)
1. A method for removing residual glue on the surface of a semiconductor is characterized by comprising the following steps:
(1) soaking a semiconductor to be treated in NMP for at least 10 min;
(2) placing the semiconductor treated in the step (1) in deionized water, soaking for 15-60 min, taking out and drying;
(3) and (3) placing the semiconductor treated in the step (2) in ethanol at 50-60 ℃, soaking for 15-30 min, taking out, and drying to obtain the treated semiconductor.
2. The method for removing the residual glue on the surface of the semiconductor according to claim 1, wherein in the step (1), the semiconductor to be treated is firstly soaked in NMP at 25-40 ℃ for 25-35 min; then soaking the mixture in NMP at 50-60 ℃ for 25-35 min at least once.
3. The method for removing residual glue from the surface of a semiconductor according to claim 1, wherein in the step (2), the drying is natural drying at room temperature.
4. The method for removing residual glue from the surface of a semiconductor according to claim 1, wherein the temperature of the deionized water in the step (2) is 20-40 ℃.
5. The method for removing residual glue from the surface of a semiconductor according to claim 1, wherein in the step (3), the drying is performed by air gun blow-drying.
6. The method for removing residual glue from the surface of a semiconductor according to claim 1, wherein the semiconductor to be treated is a semiconductor which is stripped and collected from unused and scrapped electronic products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911170100.8A CN112951706A (en) | 2019-11-26 | 2019-11-26 | Method for removing residual glue on surface of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911170100.8A CN112951706A (en) | 2019-11-26 | 2019-11-26 | Method for removing residual glue on surface of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112951706A true CN112951706A (en) | 2021-06-11 |
Family
ID=76224960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911170100.8A Pending CN112951706A (en) | 2019-11-26 | 2019-11-26 | Method for removing residual glue on surface of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112951706A (en) |
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2019
- 2019-11-26 CN CN201911170100.8A patent/CN112951706A/en active Pending
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