CN115360271A - Reworking method of deep ultraviolet LED chip - Google Patents
Reworking method of deep ultraviolet LED chip Download PDFInfo
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- CN115360271A CN115360271A CN202211042446.1A CN202211042446A CN115360271A CN 115360271 A CN115360271 A CN 115360271A CN 202211042446 A CN202211042446 A CN 202211042446A CN 115360271 A CN115360271 A CN 115360271A
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- led chip
- ultraviolet led
- deep ultraviolet
- soaking
- rework
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000002791 soaking Methods 0.000 claims abstract description 56
- 239000002253 acid Substances 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005406 washing Methods 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 9
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 8
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 5
- 150000007522 mineralic acids Chemical class 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 238000002386 leaching Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 19
- 230000002427 irreversible effect Effects 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Weting (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a reworking method of a deep ultraviolet LED chip, which comprises the following steps: after washing the deep ultraviolet LED chip to be reworked by clear water, carrying out primary acid soaking treatment; carrying out surface etching treatment on the deep ultraviolet LED chip; soaking the deep ultraviolet LED chip by adopting a BOE solution; carrying out secondary acid soaking treatment on the deep ultraviolet LED chip; soaking the deep ultraviolet LED chip by using reworking liquid; and (4) washing the deep ultraviolet LED chip by clear water, and returning to the process procedure. According to the invention, through the processes of primary acid leaching, surface etching, BOE solution soaking, secondary acid leaching and rework solution soaking, the light-emitting effect of the reworked epitaxial wafer is close to that of a normal epitaxial wafer, and the problem that the conventional strong acid or strong base is easy to damage due to long soaking time is effectively avoided.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a reworking method of a deep ultraviolet LED chip.
Background
At present, a certain proportion of epitaxial wafers in the production process of a chip of a deep ultraviolet LED cannot meet the expected process requirements, and a process rework procedure needs to be performed on the poor epitaxial wafers, but no better process rework means exists at present because the deep ultraviolet LED epitaxial wafer is mainly based on AlGaN materials and contains a large amount of Al in the epitaxial growth process, and a p-type layer of the deep ultraviolet LED is generally also AlGaN with a high Al component, so that Al is easily remained on the surface layer of the epitaxial wafer, and the effect after the process rework is affected. If strong acid or strong alkali is used for soaking the epitaxial wafer to remove the redundant Al on the surface of the epitaxial wafer, the required time is long, irreversible damage can be caused to the deep ultraviolet LED epitaxial wafer, and the light emitting effect of the reworked deep ultraviolet LED epitaxial wafer is affected. Therefore, a new rework method needs to be provided to solve the defects of the existing rework method.
Disclosure of Invention
The invention aims to provide a rework method of a deep ultraviolet LED chip, which is used for solving the problem that the manufacture procedure rework method of a deep ultraviolet LED epitaxial wafer is easy to cause irreversible damage to the epitaxial wafer.
In order to solve the technical problem, the invention provides a rework method of a deep ultraviolet LED chip, which comprises the following steps: s1, washing a deep ultraviolet LED chip to be reworked by clear water, and performing primary acid soaking treatment; s2, carrying out surface etching treatment on the deep ultraviolet LED chip after the step S1; s3, soaking the deep ultraviolet LED chip subjected to the step S2 by using a BOE solution; s4, carrying out secondary acid soaking treatment on the deep ultraviolet LED chip after the step S3; s5, soaking the deep ultraviolet LED chip subjected to the step S4 by using reworking liquid; and S6, washing the deep ultraviolet LED chip subjected to the step S4 with clear water, and returning to the process procedure.
Preferably, in the step S1 and the step S6, 99.99% deionized water is adopted for rinsing, and the time of a single rinsing is longer than 10min.
Preferably, in the step S1, aqua regia is adopted for primary acid soaking treatment, and the soaking time is 2-4 h.
Preferably, in the step S2, an inductively coupled plasma etching process or a reactive plasma etching process is adopted to etch the metal and the organic matter on the surface of the deep ultraviolet LED chip after the step S1.
Preferably, in the step S2, the deep ultraviolet LED chip after the step S1 is bombarded by using a plasma degumming machine, and the etching time is 1 to 5000 seconds.
Preferably, in the step S3, the BOE solution is an ammonium fluoride etching solution, and the mass ratio of ammonium fluoride to the solvent is 1:20, the soaking time of the BOE solution is 1 to 5000s.
Preferably, in the step S4, ITO solution is adopted for secondary acid soaking treatment, the ITO solution comprises hydrochloric acid and ferric trichloride, and the time of the secondary acid soaking treatment is 1-5000S.
Preferably, the mass ratio of the hydrochloric acid in the ITO solution is 5-30%, and the mass ratio of the ferric trichloride is 5-30%.
Preferably, in the step S5, the rework fluid comprises the following components in percentage by mass: 1 to 10 percent of inorganic acid, 1 to 10 percent of fluoride, 0.1 to 10 percent of dispersant and 70 to 80 percent of solvent.
Preferably, in the step S5, the soaking time of the rework liquid is 0.1 to 4 hours.
The invention has the beneficial effects that: the method comprises the steps of primary acid leaching, surface etching, BOE solution soaking, secondary acid leaching and rework solution soaking, the surface layer structure of an epitaxial wafer to be reworked is gradually removed, irreversible damage to the epitaxial wafer is avoided, the light emitting effect of the reworked epitaxial wafer is close to that of a normal epitaxial wafer, and the problem that damage is easily caused due to long soaking time of traditional strong acid or strong base is effectively solved.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The rework method of the deep ultraviolet LED chip provided by the invention comprises the following steps:
s1, after washing the deep ultraviolet LED chip to be reworked with clear water, carrying out primary acid soaking treatment. In the step, 99.99 percent of deionized water is adopted for rinsing with clear water, multiple times of rinsing can be carried out, and the time of single rinsing is more than 10min; then aqua regia is adopted for primary acid soaking treatment, and the soaking time is 2-4 h.
And S2, carrying out surface etching treatment on the deep ultraviolet LED chip after the step S1. In the step, etching processes such as an inductively coupled plasma etching process (ICP), a reactive plasma etching process (RIE) and the like can be adopted to etch the metal and organic matters on the surface of the deep ultraviolet LED chip after the step S1; for example, bombarding the deep ultraviolet LED chip after the step S1 by using a plasma photoresist remover, wherein the etching time is 1-5000S.
And S3, soaking the deep ultraviolet LED chip subjected to the step S2 in BOE solution. In the step, the BOE solution is an ammonium fluoride corrosive solution, and the mass ratio of the ammonium fluoride to the solvent is 1:20, the soaking time of the BOE solution is 1-5000 s, and the BOE solution is adopted for soaking to remove the isolating layer of the deep ultraviolet LED chip.
And S4, carrying out secondary acid soaking treatment on the deep ultraviolet LED chip after the step S3. In the step, ITO solution is adopted to carry out secondary acid soaking treatment, so that the purpose is to remove the P-type electrode. Wherein, the ITO solution comprises hydrochloric acid and ferric trichloride, and the time of the secondary acid soaking treatment is 1 to 5000 seconds; the mass ratio of hydrochloric acid in the ITO solution is 5-30%, and the mass ratio of ferric trichloride is 5-30%.
And S5, soaking the deep ultraviolet LED chip subjected to the step S4 by using the reworking liquid. In the step, the reworking liquid comprises the following components in percentage by mass: 1 to 10 percent of inorganic acid, 1 to 10 percent of fluoride, 0.1 to 10 percent of dispersant and 70 to 80 percent of solvent; the soaking time of the rework liquid is 0.1-4 h, and the aim is to remove the N-type electrode.
And S6, washing the deep ultraviolet LED chip subjected to the step S4 with clear water, and returning to the process procedure. In the step, 99.99% of deionized water is adopted to wash with clean water again, residual solution on the surface of the deep ultraviolet LED chip is washed away, multiple times of washing can be carried out, the time of single washing is longer than 10min, and the washed deep ultraviolet LED chip returns to carry out conventional processing procedures, so that the rework of the processing procedure of the deep ultraviolet LED chip is realized.
The following is an analysis and explanation of the implementation effect of the rework method of the deep ultraviolet LED chip through specific examples and comparative examples.
Example 1
The reworking steps of the deep ultraviolet LED chip in this embodiment are as follows:
(1) And (4) washing the epitaxial wafer needing to be reworked with clear water for 30min each time for 2 times.
(2) And (3) carrying out primary acid soaking treatment on the epitaxial wafer by using aqua regia for 2h.
(3) And bombarding the epitaxial wafer subjected to the primary acid soaking treatment by using a plasma degumming machine, wherein the etching time is 1800s.
(4) Preparing a BOE solution by adopting ammonium fluoride, hydrofluoric acid and a solvent, wherein the content of the ammonium fluoride is 38%, the content of the hydrofluoric acid is 2.42%, and soaking the etched epitaxial wafer by using the BOE solution for 1800s.
(5) Hydrochloric acid, ferric trichloride and a solvent are adopted to prepare an ITO solution, the content of the hydrochloric acid is 14%, the ferric trichloride is 18%, and the ITO solution is used for carrying out secondary acid soaking treatment for 1800s.
(6) Preparing a reworking liquid by adopting a solvent, a dispersing agent, inorganic acid, fluoride and water, wherein the content of the inorganic acid is 4 percent, the content of the fluoride is 4 percent, and performing secondary acid soaking treatment on the etched epitaxial wafer by using the reworking liquid for 4 hours.
(7) And (4) washing the epitaxial wafer needing to be reworked with clean water for 2 times, and each time for 30 minutes. And after the rework flow is finished, carrying out normal chip flow again, and obtaining a rework chip sample after the rework process is carried out again.
Blank group
The same lot of the epitaxial wafer samples meeting the process requirements as in example 1 was used as a blank set of samples.
Comparative example 1
Based on the preparation steps of the example 1, the time of the primary acid soaking treatment in the step (2) is adjusted to 1h, and the processes of other steps are consistent with those of the example 1.
Comparative example 2
Based on the preparation steps of the example 1, the time of the primary acid soaking treatment in the step (2) is adjusted to be 6h, and the processes of other steps are consistent with those of the example 1.
Comparative example 3
Based on the preparation steps of the example 1, only the step (3) is removed, the BOE solution is directly soaked after the primary acid soaking treatment is finished, and the other steps are consistent with the process of the example 1.
Comparative example 4
Based on the preparation steps of example 1, the etching time in step (3) is adjusted to 7200s, and the other steps are consistent with the process of example 1.
The results of the tests on the reworked epitaxial wafer samples of example 1, the blank group, and comparative examples 1 to 4 are shown in table 1. Comparing the blank group with the test data of example 1, it can be seen that the performance of the epitaxial wafer processed by the rework step of example 1 is substantially consistent with the performance of the epitaxial wafer meeting the process requirements, and it is proved that the rework method of the present invention can obtain a light emitting effect very close to that of a normal epitaxial wafer.
The test data of example 1 was compared with those of comparative examples 1 and 2. The difference between comparative example 1 and example 1 is that the primary acid soaking treatment time is short, so that the primary acid soaking effect is not sufficient, there is a certain residue, so that the brightness of comparative example 1 is inferior to that of example 1, and comparative example 1 shows a larger reverse leakage current. The difference between comparative example 2 and example 1 is that the primary acid soaking treatment time is too long, so that the acid etching effect is excessive, and irreversible damage is generated to the epitaxial wafer, so that the brightness of comparative example 2 is far inferior to that of comparative example 1 and example 1, and the reverse leakage current of comparative example 2 is also greatly increased, which is extremely disadvantageous to the rework process. Therefore, the time of primary acid soaking treatment needs to be strictly controlled, and a good treatment effect can be obtained by matching with the subsequent steps.
The test data of example 1 was compared with comparative examples 3 and 4. Comparative example 3 is different from example 1 in that surface etching treatment is not performed, and metal and organic substances on the surface of the deep ultraviolet LED chip are difficult to sufficiently remove due to the absence of the surface etching treatment step, so that the brightness of comparative example 3 is inferior to that of example 1. Comparative example 4 differs from example 1 in that the surface etching treatment time is too long, which causes excessive plasma etching and irreversible damage to the epitaxial wafer, so comparative example 4 has much lower brightness than example 1 and is extremely disadvantageous for the rework process. Therefore, the necessity of the surface etching treatment step can be seen, and the etching time needs to be strictly controlled, so that a better treatment effect can be obtained by matching with the subsequent steps.
TABLE 1
The method comprises the steps of primary acid leaching, surface etching, BOE solution soaking, secondary acid leaching and rework solution soaking, so that the surface layer structure of an epitaxial wafer to be reworked is gradually removed, irreversible damage to the epitaxial wafer is avoided, the light-emitting effect of the reworked epitaxial wafer is close to that of a normal epitaxial wafer, and the problems that the conventional strong acid or strong base soaking time is long and damage is easily caused are effectively solved.
It should be noted that the above embodiments belong to the same inventive concept, and the description of each embodiment has a different emphasis, and reference may be made to the description in other embodiments where the description in individual embodiments is not detailed.
The above embodiments only express the embodiments of the present invention, and the description thereof is specific and detailed, but not to be understood as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A rework method of a deep ultraviolet LED chip is characterized by comprising the following steps:
s1, washing a deep ultraviolet LED chip to be reworked with clear water, and performing primary acid soaking treatment;
s2, carrying out surface etching treatment on the deep ultraviolet LED chip after the step S1;
s3, soaking the deep ultraviolet LED chip subjected to the step S2 by using a BOE solution;
s4, carrying out secondary acid soaking treatment on the deep ultraviolet LED chip after the step S3;
s5, soaking the deep ultraviolet LED chip subjected to the step S4 by using reworking liquid;
and S6, washing the deep ultraviolet LED chip subjected to the step S4 with clear water, and returning to the process procedure.
2. The rework method of the deep ultraviolet LED chip of claim 1, wherein in the steps S1 and S6, 99.99% deionized water is used for rinsing with clean water, and the time of a single rinsing is longer than 10min.
3. The rework method of the deep ultraviolet LED chip of claim 1, wherein in the step S1, aqua regia is used for a primary acid soaking treatment, and the soaking time is 2-4 h.
4. The rework method of the deep ultraviolet LED chip according to claim 1, wherein in the step S2, the metal and organic matter on the surface of the deep ultraviolet LED chip after the step S1 are etched by using an inductively coupled plasma etching process or a reactive plasma etching process.
5. The rework method of the deep ultraviolet LED chip according to claim 4, wherein in the step S2, the deep ultraviolet LED chip after the step S1 is bombarded by a plasma degumming machine, and the etching time is 1-5000S.
6. The rework method of the deep ultraviolet LED chip of claim 1, wherein in the step S3, the BOE solution is an ammonium fluoride etching solution, and a mass ratio of ammonium fluoride to the solvent is 1:20, the soaking time of the BOE solution is 1-5000 s.
7. The rework method of the deep ultraviolet LED chip of claim 1, wherein in the step S4, an ITO solution is adopted for a second acid soaking treatment, the ITO solution comprises hydrochloric acid and ferric trichloride, and the time of the second acid soaking treatment is 1-5000S.
8. The rework method of the deep ultraviolet LED chip as recited in claim 7, wherein the weight ratio of hydrochloric acid in the ITO solution is 5-30%, and the weight ratio of ferric trichloride is 5-30%.
9. The method for reworking a deep ultraviolet LED chip according to claim 1, wherein in the step S5, the rework liquid comprises the following components in percentage by mass: 1 to 10 percent of inorganic acid, 1 to 10 percent of fluoride, 0.1 to 10 percent of dispersant and 70 to 80 percent of solvent.
10. The rework method of the deep ultraviolet LED chip of claim 9, wherein in the step S5, the immersion time of the rework liquid is 0.1-4 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211042446.1A CN115360271A (en) | 2022-08-29 | 2022-08-29 | Reworking method of deep ultraviolet LED chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211042446.1A CN115360271A (en) | 2022-08-29 | 2022-08-29 | Reworking method of deep ultraviolet LED chip |
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| CN115360271A true CN115360271A (en) | 2022-11-18 |
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| CN202211042446.1A Pending CN115360271A (en) | 2022-08-29 | 2022-08-29 | Reworking method of deep ultraviolet LED chip |
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- 2022-08-29 CN CN202211042446.1A patent/CN115360271A/en active Pending
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