TW444922U - Heating device and the processing device using the same - Google Patents

Heating device and the processing device using the same

Info

Publication number
TW444922U
TW444922U TW088202893U TW88202893U TW444922U TW 444922 U TW444922 U TW 444922U TW 088202893 U TW088202893 U TW 088202893U TW 88202893 U TW88202893 U TW 88202893U TW 444922 U TW444922 U TW 444922U
Authority
TW
Taiwan
Prior art keywords
same
processing device
heating device
heating
processing
Prior art date
Application number
TW088202893U
Other languages
English (en)
Inventor
Junichi Arami
Kenji Ishikawa
Harunori Ushikawa
Isao Yanagisawa
Nobuo Kawada
Original Assignee
Tokyo Electron Ltd
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Shinetsu Chemical Co filed Critical Tokyo Electron Ltd
Publication of TW444922U publication Critical patent/TW444922U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49083—Heater type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)
TW088202893U 1994-09-29 1995-09-26 Heating device and the processing device using the same TW444922U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26195094 1994-09-29
JP8336395 1995-03-15

Publications (1)

Publication Number Publication Date
TW444922U true TW444922U (en) 2001-07-01

Family

ID=26424398

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088202893U TW444922U (en) 1994-09-29 1995-09-26 Heating device and the processing device using the same

Country Status (3)

Country Link
US (1) US5904872A (zh)
KR (1) KR0173040B1 (zh)
TW (1) TW444922U (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112740829A (zh) * 2018-05-22 2021-04-30 沃特洛电气制造公司 集成加热器和制造方法
US11751289B2 (en) 2017-11-21 2023-09-05 Watlow Electric Manufacturing Company Integrated heater and method of manufacture
CN112740830B (zh) * 2018-10-16 2024-06-11 美科陶瓷科技有限公司 中间区域独立控制陶瓷加热器

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EP0899986B1 (en) 1996-05-05 2004-11-24 Tateho Chemical Industries Co., Ltd. Electric heating element and electrostatic chuck using the same
JP3477062B2 (ja) * 1997-12-26 2003-12-10 京セラ株式会社 ウエハ加熱装置
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US6147334A (en) * 1998-06-30 2000-11-14 Marchi Associates, Inc. Laminated paddle heater and brazing process
JP4040814B2 (ja) * 1998-11-30 2008-01-30 株式会社小松製作所 円盤状ヒータ及び温度制御装置
US6639191B2 (en) * 1999-01-25 2003-10-28 Ibiden Co., Ltd. Hot plate unit
JP2000243542A (ja) * 1999-02-24 2000-09-08 Nhk Spring Co Ltd ヒータユニット及びその製造方法
US6423949B1 (en) * 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6416318B1 (en) 1999-06-16 2002-07-09 Silicon Valley Group, Inc. Process chamber assembly with reflective hot plate and pivoting lid
US6144013A (en) * 1999-07-01 2000-11-07 International Business Machines Corporation Local humidity control system for low temperature electronic module
US6140624A (en) * 1999-07-02 2000-10-31 Advanced Ceramics Corporation Pyrolytic boron nitride radiation heater
EP1120829A4 (en) * 1999-08-10 2009-05-27 Ibiden Co Ltd CERAMIC PLATE FOR DEVICE FOR PRODUCING SEMICONDUCTORS
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP4505169B2 (ja) 1999-09-29 2010-07-21 東京エレクトロン株式会社 多重領域抵抗ヒータ
TW476983B (en) 1999-09-30 2002-02-21 Tokyo Electron Ltd Heat treatment unit and heat treatment method
WO2001031978A1 (fr) * 1999-10-22 2001-05-03 Ibiden Co., Ltd. Plaque chauffante en ceramique
EP1124404B1 (en) * 1999-11-19 2005-08-10 Ibiden Co., Ltd. Ceramic heater
JP2001203257A (ja) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
JP3567855B2 (ja) * 2000-01-20 2004-09-22 住友電気工業株式会社 半導体製造装置用ウェハ保持体
US6887316B2 (en) 2000-04-14 2005-05-03 Ibiden Co., Ltd. Ceramic heater
US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
US20010035403A1 (en) * 2000-05-18 2001-11-01 Albert Wang Method and structure for producing flat wafer chucks
JP4697909B2 (ja) * 2000-05-25 2011-06-08 コバレントマテリアル株式会社 カーボンワイヤー発熱体封入ヒータ
US6414271B2 (en) * 2000-05-25 2002-07-02 Kyocera Corporation Contact heating device
JP3853587B2 (ja) * 2000-10-19 2006-12-06 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP4328003B2 (ja) * 2000-10-19 2009-09-09 日本碍子株式会社 セラミックヒーター
DE10110792B4 (de) * 2001-03-06 2004-09-23 Schott Glas Keramisches Kochsystem mit Glaskeramikplatte,Isolationsschicht und Heizelementen
JPWO2002084717A1 (ja) * 2001-04-11 2004-08-05 イビデン株式会社 半導体製造・検査装置用セラミックヒータ
US20020185487A1 (en) * 2001-05-02 2002-12-12 Ramesh Divakar Ceramic heater with heater element and method for use thereof
KR20030026387A (ko) * 2001-09-12 2003-04-03 주식회사 아이앤에스 반도체 웨이퍼의 화학기상증착공정중에 사용되는받침히터와 그 제조방법
KR100431658B1 (ko) * 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
US6730175B2 (en) * 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
JP3887291B2 (ja) * 2002-09-24 2007-02-28 東京エレクトロン株式会社 基板処理装置
US7909884B2 (en) * 2002-12-20 2011-03-22 Ossur Hf Suspension liner system with seal
US6891134B2 (en) * 2003-02-10 2005-05-10 Asml Netherlands B.V. Integrally formed bake plate unit for use in wafer fabrication system
JP4380236B2 (ja) * 2003-06-23 2009-12-09 東京エレクトロン株式会社 載置台及び熱処理装置
JP4281605B2 (ja) * 2004-04-08 2009-06-17 住友電気工業株式会社 半導体加熱装置
US7126091B1 (en) * 2005-03-23 2006-10-24 Eclipse Energy Systems, Inc. Workpiece holder for vacuum processing
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US8168050B2 (en) * 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
US20080224817A1 (en) * 2007-03-15 2008-09-18 Sokudo Co., Ltd. Interlaced rtd sensor for zone/average temperature sensing
KR100919730B1 (ko) * 2007-11-20 2009-09-29 최점진 수평 굴착기
US10192760B2 (en) * 2010-07-29 2019-01-29 Eugene Technology Co., Ltd. Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit
KR101125645B1 (ko) * 2010-03-02 2012-03-27 (주) 예스티 반도체 및 엘이디 웨이퍼 온도 제어 장치
JP2017033748A (ja) * 2015-07-31 2017-02-09 キヤノン株式会社 像加熱装置及びこの装置に用いられるヒータ
WO2017059645A1 (zh) * 2015-10-09 2017-04-13 北京北方微电子基地设备工艺研究中心有限责任公司 加热装置以及加热腔室
US10679873B2 (en) * 2016-09-30 2020-06-09 Ngk Spark Plug Co., Ltd. Ceramic heater

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11751289B2 (en) 2017-11-21 2023-09-05 Watlow Electric Manufacturing Company Integrated heater and method of manufacture
CN112740829A (zh) * 2018-05-22 2021-04-30 沃特洛电气制造公司 集成加热器和制造方法
CN112740830B (zh) * 2018-10-16 2024-06-11 美科陶瓷科技有限公司 中间区域独立控制陶瓷加热器

Also Published As

Publication number Publication date
KR960012379A (ko) 1996-04-20
KR0173040B1 (ko) 1999-03-30
US5904872A (en) 1999-05-18

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004
MM4K Annulment or lapse of a utility model due to non-payment of fees