4 42867 Α7 Β7 經濟部中夬標準局員工消費合作社印製 五、發明説明（'） 發姐霞 1 ,皲明置_M 本發明係闞於一種電漿處理裝置，尤其是用在電漿蝕 刻半導體晶圓之平行板電漿處理装置。 相脇 當使用平行板（平板電極）電漿處理装置處理半専體晶 圓時，若半導體晶圓外園之直接朝外放射狀排列的部分 係由絕緣材料組成，如陶瓷，石英等，則會有電漿在其 位在該絕緣材放射狀内部區域之邊緣區域.因此，分刖 在半導體晶圓中央和邊緣區域之電漿會產生不同的吠態 ,而造成在半導體晶圓邊緣區域之電漿處理效率要比半 導體晶圓中央區域差，考慮上述之缺點，希望能藉由故 置一由與半導體晶画材料相同之材料所形成的電漿延伸 體，使均勻化電漿處理效率程度的差異，其中該體為半 導體晶圓外圍之直接朝外放射狀排列的部分。 第1匾為傳統平行板電漿處理装置，如第1圈所示， 此傳統平行板電漿處理裝置有一電漿處理腔體1,其中， 其包含一接地之上電極3, —圍繞該上電棰3之上電極絕 緣體2,—平行位在上電極3之下，且當作置放半専體晶圓 8之晶圓台的下電極6,此下電搔6係連接到供應高頻電 能之高頻供應電源7, —圍繞該下電極6之下電極絕掾 體5,及一環形電漿延伸體4,此電漿延伸體係由在下電極 6上之半導體晶圓8外圍的直接朝外放射狀排列之半導 體材科組成，Μ增加電漿處理半専體晶圓8表面時之均 -3- I------^----裝------訂-------11 線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標隼（CNS ) Α4規格（210X297公釐） 442867 經濟部中央標準局員.工消費合作社印策 A7 B7 五、發明説明（> ) 勻性，當將半導體晶圓8放置在下電極6的表面上時， 會通入電漿産生氣體到電漿處理腔體在電漿處理腔體 1中之電漿産生氣體的壓力穩定之後，高頻供應電源7會 供應高頬電能到下電搔8,使在下電棰6和上電極3之間産 生電漿，之後，可以利用所産生之電漿蝕刻該半導體晶 圓8的表而。 第2圖和第3圖為第1圖電漿處理裝置，在用電漿 蝕刻半導體晶圓8時之離子護套中，對各不同的電漿延 伸體4-2 ,4-3之各個電場強度的分佈。 在第2圖中，該電漿延伸體4-2之電阻很大，大到幾乎 可以說是一個絶緣體，對於該電漿延伸體4-2,産生電漿 之區域不會完全延伸到半導體晶圔8的外圍匾域，所以 不能對半導體晶國8的外圍區域和中央匾域提供一很均 勻的電場，因此，在半導醴晶圓8的外圍區域，其蝕刻效 率低於半導體晶圓8的中央匾域β 在第3圏中，電漿延伸醱4-3之導電性較優於電漿延伸 體4-2,對於電漿延伸臞4-3,産生電漿之匾域會朝外放射狀 的越過半導體晶圓8的外圍區域，而延伸進入到在電漿 延伸體4-3上之匾域，在半導體晶圖8中央匾域之電場強 度較半導體晶圓8外圍匾域低，當要改善半導體晶圓8外 圍區域之蝕刻效率時，在半導體晶圓8中央區域之蝕刻 效率會較低。 發明槪沭 因此，本發明之目的在於提供一種電漿處理裝置，其 -4 - 本紙張尺度適用中國國家橾隼（CNS } Λ4規格（2丨0 X 297公釐） -----------—裝------訂------線 (請先閱讀背面之注意事項再填寫本頁) 442867 A7 B7 五、發明説明（今 強保晶 裝伸體直 一 場，體 理延導域由 電時導 處行半區係 。 一圓半 漿平的圍體成 生晶對 電且圚外伸製 産髅置。板下晶圇延料 ，導裝力行之之晶漿材 上半理能平棰上醱電體 面理處刻種電其導此導 表處漿蝕一上在半，半 個在電的供該撐之體之 整有該勻提在支上伸内 的具得均於位作搔延圍 圓其使且在一當電漿範 晶及，效明，係下電定 體，區有發極極該的設 導漿生有本電電在列在 半電産能 ，上下一排持 之之定面明一此及狀保 理佈穩表發含，以射阻 處分之個本包棰，放電 要勻變整據其電台外定 在均不的根，下圖朝恃 能度持圓 置之晶接種 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標隼局—.工消費合作杜印製 當操作此電漿處理装置處理半導體晶圈時，該由一種半 導體材料製成之電漿延伸體，因電漿傳熱，而險箸時間的 經過，其具有較低的待定電阻，若在正常s度下，該電 锻延伸體的待定電阻很高，且此待定電阻會保持在某程 度之上，一直到半導體晶圓之電漿處理完成，則産生電 锻之匾域不會延伸超過半導體晶圚之外圍區域，若電漿 延伸體之恃定電阻比另外的某程度低，則電漿延伸允許 電漿擴展進入比半導體晶圓尺寸大之區域，因為電漿延 伸醱會通過一來自下電搔之電場，根據本發明，電漿延 伸體有一保持在某範圍内之待定電阻，且其具有能在半 導體晶圓的整個表面上産生均勻而又穩定電漿之某形狀 和结構，因而可以很均勻且有效地蝕刻半導體晶圓的整 鹤表面。 本發明上述的和其他的目的，特擻和優點將參考本發 本紙張足度適用中國國家標準（CNS M4規格（21〇Χ297公釐） 44286 7 A7 B7 五、發明説明（立 明範圍之圖式説明於后 圖式簡菫説明 套 護 > 子 圖離 面漿 截電 横之 之置 置裝 裝理 理處 處漿 赛 S 電圖 板 1 行第 平在 統生 傳産 為為 圔圖 1 2 第第 定 特 大1 有 具 置 裝 該 中 其 圖 面 截2; 横4-佈體 分伸 度延 強漿 場電 電之 的阻 ΓΎ S tr -¾ 套定 護待 子小 離一 漿有 電具 之置 置裝 裝該 理中 處其 漿， 電圖 圓面 1截 第横 在佈 生分 産度 為強 _ 場 asa 3 AN 第的阻 Hr 體 伸 延 漿 書f 的 異 相 之 的子 置離 装 後 理電 處之 漿生 電産 板所 行置 平裝 之理 例處 施漿 實電 明該 發在分 本示度 據圖強 根其場 為，電 圖圖的 4 面中 第截套 横護 及 以 佈 裝 理 處 漿 板 行 平 之 例 施 實1 另 明 發 本 據。 根圖 為面 圖截 5 横 第的 置 的 置 裝 理 處 0 asa- 板 1Ί ίι 平 之 例 施 實 明 發 本 沭據 詳根 例為 施圖 音 4 徉第 較 富I Ζ 驾 Γ?Γ 了统 除傳 置之 裝圔 i: 理 3 處第 漿到 電圖 板 1 行第 平於 之示 團和 4 上 第本 於基 示 ， 此外 -之 圖體 面伸 截延 横漿 (請先閱讀背面之注意事項再填寫本頁) -裝. 訂 1 線 _ 經濟部中央標準局®工消費合作社印製 離中 之置 漿装 電理 生處 産漿 在電 ，該 中在 圏示 4 圇 第有 在也 ，佈 同分 相度 置強 裝場 理電 處的 漿中 電套 板護 行子 放伸 會延 ，漿 區電 漿達 電到 即 而 域而 區表 之的 漿 8 電圓 生晶 産體 :導 現半 發過 圖越 4 伸 第延 究地 研狀 tin ， ήΛ» 面 表 的 8 圓 晶 體 4-導 體半 示 表 此 傾之 整圖 在 3 生第 産和 地 _ 定 2 穩第 且於 勻示 均像 會不 漿而 電， :上 面 表 的 本纸張尺度適用中國國家標隼（CNS ) Α4規格（210Χ297公釐） 經濟部中央標準局員工消費合作社印敢 442867 A7 B7 五、發明説明（（） 傳統裝置》 根據本發明，第4國中，表示為4-4之電漿延伸體傺 由一種半導觴材料構成，其中該材料為特定電阻範圍由 1Ω CB到15Ω 之矽材料，該電漿延伸體4-4之待定電阻 的數值範圍偽根據實驗結果決定，若電漿延伸體4-4之 特定電阻大於15QC·，則電漿區不會完全朝外放射狀地 延伸到半導體晶圓8的外圍匾域，反之，若電漿延伸體 4-4之待定電阻小於1Ω c*,則電漿區的朝外放射狀地延 伸會超出半導體晶圓8的外圍匾域，姑且不論電漿延伸 體4-4之特定電阻是否小於1Ω C*或大於15Ω C*，如第4 圖所示，從半導體晶圓8的中央區域到外圍區域，其不 可能有一很均勻的電場強度。 雷漿延伸體4-4包含一以圓形圍撓半導體晶圓8之環形 電漿延伸體，電漿延伸體4-4之上表面緊臨著半導體晶圓8 的上表面，且自半導體晶囫8朝外放射狀地延伸，該環 形電漿延伸體4-4之寬度為20b«,其可能為一單一的環 形體或許多環形排列之環形體。 第5圖為根據本發明另一實施例之平行板電漿處理裝 置的横截面國，此示於第5圖之平行板電漿處理裝置類 似於示於第4圖之平行板電漿處理装置，但除了類似於 示於第4圖之電漿延伸體4-4之具有一待定電阻的電漿 延伸體4-5以外，其中其放射狀内步级部分較其其他部 分薄了一健半導體晶圓8的厚度》 該電漿延伸體4-5之放射狀内步级較薄部分向内延伸 -7- 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） --^--^-----裝------.訂-----I線 (請先閲讀背面之注意事項再填寫本頁) 4在2867 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明（b ) 到下電極6上之半導體晶圓8的外圍匾域之下，該放射 狀内步级較薄部分偽保護下電極6之表面，使其免於電 漿通過環繞在半導體晶圓8外圍區域和電漿延伸體4-5 内圍區域之間的空隙，其中該電漿延伸體4-5並没有此種 内步级部分β 在示於第4圖和第5圖之各平行板電漿處理裝置中， 下電漿6被下電極絶緣體5覆蓋，且包含一其表面已作 陽極處理之鋁板，而上電棰3則由上電棰絶緣體2覆蓋 ,且包含一平行下電極6之矽板，半導體晶圓8會放在下 電棰6之上處理，然後會各以30SCCH(每秒鑌榡準立方公 分）和7Gsccm的速率通入電漿産生氣醱CF4和（：1^3到電漿 處理腔體1,當在電漿處理腔體1中之電漿産生氣體的壓 力穩定之後，從高頻供應電源7供應一振級頻率13.56MHz 和輪出功率15Q0W之高頻電能到下電極6,然後會在下電楂 6和上電極3之間的空間産生電漿，此時，罨漿會産生 在半導體晶圓8的整齒表面上，而且也會産生在電漿延 伸體4-4 ,4-5的整楠表面上。 各種不同的電漿處理裝置都採用不同的髙頻電能外加 条统，例如，有呰電漿處理裝置不僅供應高頻電能到下 電搔，也供到上電極，但是，本發明之原理也可以應 用到此種不同的電漿處理裝置。 雖然已特別詳细説明了本發明之較佳實施例，但是此 種説明僅僅是為了説明而已，而且其變化例和修正例並 不脱離下面之申諳專利範圍的精神和範圍。 -8- (請先閱讀背面之注意事項再填寫本頁) 裝. 訂 I —線----' .- *11' :*: m^i ^—(^1 · -- -- ..... I— m —Hi nn 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 867 4 A7 B7五、發明説明（7 ) 參考符號說明 1 .....電漿處理腔體 2 .....上電極絕緣體 3 .....上電極 4 .....電漿延伸體 5 .....下電極絕緣體 6 .....下電極 7 .....高頻電源 8 .....晶圓 4-2.4-3,4-4,4-5.電漿延伸體 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 -9 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）4 42867 Α7 Β7 Printed by the Consumers 'Cooperative of the China Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (') Fei Xia 1, 皲 明 置 _M This invention is applied to a plasma processing device, especially for plasma etching. Parallel plate plasma processing device for semiconductor wafers. When using a parallel plate (plate electrode) plasma processing device to process a semi-corporeal wafer, if the part of the semiconductor wafer outside the radial arrangement directly consists of insulating materials, such as ceramics, quartz, etc., Plasma is located in the edge area of the radial inner area of the insulating material. Therefore, the plasma that is divided in the center and edge area of the semiconductor wafer will produce different bark states, causing electricity in the edge area of the semiconductor wafer. The plasma processing efficiency is worse than that of the central region of the semiconductor wafer. Considering the above-mentioned disadvantages, it is hoped that a plasma extension body formed of the same material as the semiconductor crystal painting material can be provided to make the plasma processing efficiency uniform. The difference is that the body is a portion of the periphery of the semiconductor wafer that is directly arranged radially outward. The first plaque is a conventional parallel plate plasma processing device. As shown in the first circle, the traditional parallel plate plasma processing device has a plasma processing chamber 1, which includes a grounded upper electrode 3, which surrounds the upper plate. Electrode insulator 2 on top of the electrode 3, which is parallel to the lower electrode 3 and serves as the lower electrode 6 of the wafer stage on which the semi-semi-wafer wafer 8 is placed. This lower electrode 6 is connected to the supply of high frequency A high-frequency power supply source 7 for electric energy, surrounding the lower electrode insulation 5 of the lower electrode 6 and a ring-shaped plasma extension body 4, the plasma extension system is directly directed toward the periphery of the semiconductor wafer 8 on the lower electrode 6. The composition of the semi-radial array of semiconductor materials is increased, and the average of the increase in plasma treatment of the surface of the semi-corporeal wafer 8 is increased. ----- 11 line (please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 442867 Member of the Central Standards Bureau of the Ministry of Economic Affairs. Printing policy of Industrial and Consumer Cooperatives A7 B7 5. Description of the invention (>) Uniformity, when the semiconductor wafer 8 is placed on the surface of the lower electrode 6, the plasma will be passed to generate gas to the plasma. After the pressure in the plasma processing chamber in the plasma processing chamber 1 is stabilized, the high-frequency power supply 7 will supply high power to the lower power 8 to generate electricity between the lower power 6 and the upper electrode 3. After that, the surface of the semiconductor wafer 8 can be etched using the generated plasma. Figures 2 and 3 show the plasma processing device of Figure 1. In the ion sheath of the semiconductor wafer 8 when plasma is etched with plasma, the electric fields of the plasma extensions 4-2 and 4-3 are different. Distribution of intensity. In the second figure, the resistance of the plasma extension body 4-2 is so large that it is almost an insulator. For the plasma extension body 4-2, the area where the plasma is generated does not completely extend to the semiconductor. The outer plaque region of the wafer 8 cannot provide a very uniform electric field to the outer region and the central plaque region of the semiconductor wafer 8. Therefore, in the outer region of the semiconductor wafer 8, the etching efficiency is lower than that of the semiconductor wafer. The central plaque domain of 8 β In the third frame, the plasma extension 酦 4-3 has better conductivity than the plasma extension 44-2. For the plasma extension 臞 4-3, the plaque domain that generates the plasma will The outer radial crosses the peripheral area of the semiconductor wafer 8 and extends into the plaque area on the plasma extension body 4-3. The electric field intensity in the central plaque area of the semiconductor crystal image 8 is lower than that of the semiconductor plaque 8 When the etching efficiency in the peripheral region of the semiconductor wafer 8 is to be improved, the etching efficiency in the central region of the semiconductor wafer 8 will be lower. Invention 槪 沭 Therefore, the purpose of the present invention is to provide a plasma processing device, which is -4-the paper size is applicable to the Chinese national standard (CNS} Λ4 specification (2 丨 0 X 297 mm) ------- ------ installation ------ order ------ line (please read the precautions on the back before filling this page) 442867 A7 B7 V. Description of the invention The physical extension area is divided into half regions by the electric time conduction unit. A round and semi-flattened perimeter body is formed with opposite crystals and extruded to produce a skull set. The crystals under the plate are stretched and the crystals of the guide are installed. The upper half of the pulp material can be flatly carved on the upper surface of the electric body. The electric conductor is engraved on the surface of the guide. The surface is etched on the top and the half is half. The inner parts are all in the position of extension and encirclement, and they are used as a plasma fan, and are effective and stable. They are connected to a fixed body, and the poles are provided. The guides have the electric power listed in half. The electricity production capacity, the fixed surface of the upper and lower rows, and the factoring and stabilization table are included, and the burden is dealt with by radio resistance. The discharge must be uniformly adjusted according to the roots outside the radio station. Hajj energy Inoculation with round crystals (please read the precautions on the back before filling out this page) Central Bureau of Standards, Ministry of Economic Affairs—industrial and consumer cooperation Du printed When operating this plasma processing device to process semiconductor crystal rings, a semiconductor Plasma extensions made of materials have low undetermined resistance due to plasmon heat transfer. The undetermined resistance of the electroforged extension is very high at normal s degrees. The resistance to be determined will remain above a certain level until the plasma processing of the semiconductor wafer is completed, and the plaque area generated by electroforging will not extend beyond the peripheral area of the semiconductor crystal. To some extent, the plasma extension allows the plasma to expand into an area larger than the size of the semiconductor wafer, because the plasma extension will pass an electric field from the lower plasma. According to the present invention, the plasma extension has a The resistance to be determined within the range, and it has a shape and structure that can generate a uniform and stable plasma on the entire surface of the semiconductor wafer, so it can etch the semiconductor wafer very uniformly and effectively. The whole surface of the crane. The above and other purposes, features and advantages of the present invention will refer to the paper's full compliance with the Chinese national standard (CNS M4 specification (21 × 297 mm)) 44286 7 A7 B7 Schematic description of the range is explained in the following diagrams. Brief description of the sheathing> The sub-graph is separated from the slurry and cut off. The installation and management of the equipment are all in place.圔 Figure 1 2 The first fixed size 1 has the figure 2 of the installation; horizontal 4-cloth body extension and extension of the resistance of the electric field of the pulp field ΓΎ S tr -¾ The electric device is installed and installed. The circular surface of the electric diagram is 1 section, and the production yield is strong in the field. The field resistance is Hr, and the child of the opposite phase extends the child of the book. After the installation and installation of the Plasma power generation board in the electrical production department, the case of placing the paper in the case of plain packaging, the electric power is clear, and the field is based on the chart, and the field is as shown in the figure. Set the horizontal protection and use the example of the cloth board to flatten the board. . The root figure is the section view of the horizontal section. The placement of the horizontal section is 0 asa- board 1Ί ίι The example of flatness Shi Shiming issued this book. According to the detailed example, it is Shi Tuyin 4. The richer I ZZ drives Γ? Γ In addition to the installation of the equipment i: 3 places to the electric drawing board 1 row and the flat display group and 4 the first to the basic display, in addition-the drawing decently stretched horizontally (please read the back first Please fill in this page again)-Packing. Order 1 line _ Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Industrial and Consumer Cooperatives, Lijiang Electric Appliances, which produces pulp and electricity, which is shown in 4 In the same place, the electric shield of the plasma jacket in the same place where the electrical installation is placed will be extended, and the plasma in the plasma area will reach the current level. : It has been found that the semi-finished shape of the graph is shown in Figure 4, and the 8-round crystal 4-conductor half-surface of the surface is shown in the figure. In the uniform display, the image will be lost without electricity: The paper size in the table above applies to the Chinese National Standard (CNS) Α4 Specifications (210 × 297 mm) The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs of the People's Republic of China Yingan 442867 A7 B7 V. Description of the Invention (() Traditional Device) According to the present invention, in the fourth country, the plasma extension body indicated as 4-4 is made of a kind It is composed of semiconducting rhenium material, which is a silicon material with a specific resistance range from 1Ω CB to 15Ω. The value range of the resistance to be determined for the plasma extension 4-4 is pseudo-determined based on the experimental results. If the plasma extension 4-4 If the specific resistance is greater than 15QC ·, the plasma area will not completely extend radially outward to the outer plaque area of the semiconductor wafer 8. On the contrary, if the pending resistance of the plasma extension body 4-4 is less than 1Ω c *, The plasma area radially outwardly extends beyond the peripheral plaque area of the semiconductor wafer 8, regardless of whether the specific resistance of the plasma extension body 4-4 is less than 1Ω C * or greater than 15Ω C *, as shown in Figure 4, It is not possible to have a very uniform electric field strength from the central region to the peripheral region of the semiconductor wafer 8. The lightning plasma extension 4-4 includes a circular plasma extension that surrounds the semiconductor wafer 8 in a circular shape, and the plasma extends The upper surface of the body 4-4 is next to the semiconductor The upper surface of the wafer 8 extends radially outward from the semiconductor wafer 8. The annular plasma extension 4-4 has a width of 20b «, which may be a single annular body or a plurality of annular arrayed annular bodies. Figure 5 is a cross-sectional view of a parallel plate plasma processing apparatus according to another embodiment of the present invention. The parallel plate plasma processing apparatus shown in Figure 5 is similar to the parallel plate plasma processing shown in Figure 4. Device, except that it is similar to the plasma extension body 4-4 shown in FIG. 4 with the plasma extension body 4-5 having a resistance to be determined, wherein the radial inner step portion is thinner than the other portions Thickness of the semiconductor wafer 8》 The thinner radial step of the plasma extension 4-5 extends inward -7- This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X297 mm)-^ -^ ----- Installation ------. Order ----- I line (Please read the precautions on the back before filling this page) 4Printed in 2867 Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (b) Under the outer plaque area of the semiconductor wafer 8 on the lower electrode 6, the radial inner step is thinner Protect the surface of the lower electrode 6 from the plasma surrounding the gap between the peripheral area of the semiconductor wafer 8 and the inner area of the plasma extension body 4-5. The plasma extension body 4-5 does not have this. Inner step part β In each of the parallel plate plasma processing apparatuses shown in FIGS. 4 and 5, the lower plasma 6 is covered by the lower electrode insulator 5 and includes an aluminum plate whose surface has been anodized, The power supply 3 is covered by the power supply 2 insulator and includes a silicon plate parallel to the lower electrode 6. The semiconductor wafer 8 is placed on the power supply 6 and processed at 30 SCCH (seconds per second). Quasi-cubic centimeters) and 7Gsccm at the rate of plasma generation to generate gas radon CF4 and (: 1 ^ 3 to the plasma processing chamber 1, when the pressure of the plasma generated gas in the plasma processing chamber 1 stabilizes, from high The frequency power supply 7 supplies a high-frequency electric power with a vibration frequency of 13.56MHz and a power output of 15Q0W to the lower electrode 6, and then a plasma is generated in the space between the lower power hawk 6 and the upper electrode 3. At this time, the pulp will generate On the entire tooth surface of the semiconductor wafer 8, but also the entire surface of the plasma extension body 4-4, 4-5 On. Various plasma processing devices use different high-frequency electrical energy plus systems. For example, there is a plasma processing device that supplies not only high-frequency electrical energy to the lower battery, but also the upper electrode. However, the principles of the present invention can also Application to this different plasma processing device. Although the preferred embodiment of the present invention has been described in detail, this description is for the purpose of illustration only, and its variations and modifications do not depart from the spirit and scope of the following patent claims. -8- (Please read the notes on the back before filling in this page) Binding. Order I —line ---- '.- * 11': *: m ^ i ^ — (^ 1 ·--.. ... I— m —Hi nn This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 867 4 A7 B7 V. Description of the invention (7) Reference symbol description 1 ..... Plasma Processing chamber 2 ..... upper electrode insulator 3 ..... upper electrode 4 ..... plasma extension body 5 ..... lower electrode insulator 6 ..... lower electrode 7 ... ... High-frequency power supply 8 ..... Wafer 4-2.4-3, 4-4, 4-5. Plasma extension (Please read the precautions on the back before filling this page) Central Bureau of Standards, Ministry of Economic Affairs Employee Consumption Cooperative Print-9-This paper size applies to China National Standard (CNS) A4 (210X 297 mm)