TW432556B - Die pad and method for manufacturing the same - Google Patents

Die pad and method for manufacturing the same Download PDF

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Publication number
TW432556B
TW432556B TW088121438A TW88121438A TW432556B TW 432556 B TW432556 B TW 432556B TW 088121438 A TW088121438 A TW 088121438A TW 88121438 A TW88121438 A TW 88121438A TW 432556 B TW432556 B TW 432556B
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TW
Taiwan
Prior art keywords
wafer
holder
pad
ball
metal
Prior art date
Application number
TW088121438A
Other languages
Chinese (zh)
Inventor
Yung-Pin Hung
Wen-Sheng Chang
Original Assignee
Advanced Semiconductor Eng
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Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW088121438A priority Critical patent/TW432556B/en
Application granted granted Critical
Publication of TW432556B publication Critical patent/TW432556B/en

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention relates to a die pad, which comprises a pad, a plurality of metal coating films and a plurality of ball pads. The plurality of metal coating films on the pad are formed as the layout of external leads. The ball pads are formed on the metal coating film for performing the backend wire bonding process. The method for forming die pad comprises the steps of: providing a pad having a plurality of metal coating films; using wire bonding machine to bond ball pad on the metal coating film so as to form ball pads on the metal coating film; adhering a die to the pad by a glue layer; using the wire bonding machine to connect the solder pad of the die to the corresponding ball pad of the pad by wire bonding thereby forming a communicating path.

Description

五、發明說明（1) 【發明領域】 本發明係有關於一種晶片承座及製造方法，特別是有關 於晶片承座導線焊墊上形成凸點之構造及製造方法β 【先前技術】 習用半導體元件，如第一Α至一Ε圖所示公告於八十七年 十一月一 Η '日之我國公告第348306號「具封膠體之元件 及其製法」發明專利案，其包括一封膠體i 0 1、一晶片1 〇2 及一晶片承座108 ; —個包封晶片1〇2之封膝體1〇1，該封 路體101具有位於晶片承座108上的焊塾1〇5，該焊墊1〇5由 晶片承座108表面向下延伸’並由封膠體之至少一側表 面向周緣延伸；分別供設至凸點1 〇 7之金屬鍍膜1 〇 6 ;及導 線104連接晶片102之焊塾103與金屬鑛膜106的連接零件。 該發明案製造方法係在承座1 〇 8上先以黏膠層A黏貼該晶片 102 ’如第一A圖所示；將球墊105以打線機臺置於金屬，鑛 膜1 06上，如第一B圖所示；將數條導線1〇4打線連接於 晶片102之焊墊103及金屬鍍膜1〇6之間，使該晶片102及凸 點107形成通路’如第一 C至一E圖所示。按，該晶月102先 置於承座108上後進行烘烤〔curing〕時，該黏膠層A在高 溫下產生化學反應而釋放氣體〔outgasing〕，然而，若 在金屬鍍膜106上先前已沉積一些污染物如碳氫化化物 〔hydrocarbon〕，，使得在該金屬鍍膜106上形成二次污 染（twice contaminations 〕，而該黏膠層A往往會發生 溢膠現象，因此靠近於該黏膠層A的金屬鍍膜106上容易被 溢膠沾染而嚴重污染，若在受到污染層阻絕的該金屬鍍膜V. Description of the invention (1) [Field of the invention] The present invention relates to a wafer socket and a manufacturing method, and more particularly to a structure and a manufacturing method of a bump formed on a wire pad of a wafer socket. [Previous technology] Conventional semiconductor device , As shown in the first Α to Ε diagrams, published in the National Patent Publication No. 348306, “Element with Sealing Colloid and Its Manufacturing Method” on November 27, 1987, which includes a colloid i 01, a wafer 102 and a wafer holder 108;-a knee body 101 for encapsulating the wafer 102, the sealing body 101 has a welding pad 105 on the wafer holder 108, The pad 105 extends downward from the surface of the wafer holder 108 and extends from at least one side surface of the sealant to the peripheral edge; the metal plating film 106 provided to the bump 107 is respectively; and the wire 104 is connected to the wafer. The connecting part of the welding pad 103 of 102 and the metal ore film 106. The manufacturing method of the invention is that the wafer 102 is first adhered with an adhesive layer A on the holder 108 as shown in the first A diagram; the ball pad 105 is placed on a metal and mineral film 106 by a wire drawing machine. As shown in the first figure B, a plurality of wires 104 are connected between the pad 103 of the wafer 102 and the metal plating film 106, so that the wafer 102 and the bump 107 form a path 'as in the first C to one E picture. Press, when the crystal moon 102 is first placed on the holder 108 and then baked, the adhesive layer A generates a chemical reaction at a high temperature and releases gas. However, if the metal coating 106 has been previously Deposition of some pollutants, such as hydrocarbons, causes secondary contaminations to form on the metal coating 106, and the adhesive layer A tends to overflow, so it is close to the adhesive layer A The metal plating film 106 is easily contaminated by overflow glue and is seriously contaminated. If the metal plating film is blocked by the contaminated layer,

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^3? 5.Sc 五、發明說明（2) 1 0 6上進行打球墊時，造忐 r , 造成球墊1〇5與金屬鍍膜1〇6的焊接 度〔bondabi 1 ity]不佳、^ ' 層A因加熱所釋放氣體的情 也inc办無法避免的情況下，提升球' 塾1〇5與金屬㈣106的焊接度具有-定的困難。 s；；有im本發明之晶片承座及製造方法改良上述之缺 =其在承座之金屬錄膜未受黏料釋放氣體或溢膠污染 ξ ί开:ί球墊：以改善該金屬鍍膜受黏膠層釋放氣體或溢 污？、/再進行打球墊的缺點，而避免該金屬鍍膜與球墊 的焊接度降低時才進行打球塾。 【發明概要】 本發明主要目的係提供—種晶片承座及製造方法，其在 承座之金屬鍍膜未受黏膠層釋放氣體或溢膠污染前先形成 球墊以提升導線在球墊上的焊接度，使本發明具有提高產 品可靠度之功效。 根據本發明之晶片承座裝置’其主要包含一承座^個 金屬敍膜及數個球墊。該承座上將該數個金屬鍍膜I外 接腳佈局，在該金屬鍍膜上預打球墊形成球墊供進行後段 的打線製程》 根據本發明之晶片承座製造方法，其主要包含步驟：一 承座設有數個金屬鍍膜；該金屬鍍膜上以打線機臺打球 墊’使得在該金屬鍍膜上形成球墊；將一晶片以黏膠層黏 貼於該承座上’打線機臺則將該晶片之悍塾打線連接於相 對應的承座之球墊以形成通路》 【圖式說明】^ 3? 5.Sc V. Description of the invention (2) When the ball pad is performed on 106, the r is created, resulting in a poor welding [bondabi 1 ity] between the ball pad 105 and the metal plating film 106, ^ 'In the case where layer A releases gas due to heating, it is impossible to raise the ball.' The degree of welding between 塾 105 and metal ㈣106 is difficult to determine. s ;; Improving the above-mentioned defect of the wafer holder and the manufacturing method of the present invention = the metal recording film on the holder is not contaminated by the release of gas or overflow from the adhesive ξ OPEN: ί pad: to improve the metal coating Affected by the release of gas or spills from the adhesive layer? And / or perform the disadvantages of the ball pad, and avoid the ball cricket when the weldability between the metal coating and the ball pad is reduced. [Summary of the Invention] The main purpose of the present invention is to provide a wafer holder and a manufacturing method, which forms a ball pad before the metal coating of the holder is not polluted by the release of gas from the adhesive layer or the overflow of the glue, so as to improve the welding of the wire on the ball pad. Degree, so that the present invention has the effect of improving product reliability. The wafer holder device according to the present invention includes a holder, a metal film, and a plurality of ball pads. The plurality of metal plated film I external pins are arranged on the seat, and a ball pad is pre-formed on the metal plated to form a ball pad for the subsequent wire bonding process. According to the wafer seat manufacturing method of the present invention, the method mainly includes the steps of: There are several metal plating films on the metal plating film; a wire pad ball pad is used to form a ball pad on the metal plating film; a wafer is adhered to the base with an adhesive layer. Fighting wire is connected to the ball pad of the corresponding seat to form a path. [Illustration]

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五、發明說明（3) 為了讓本 顯特徵，下文 作詳細說明如 第1A-1E圓 之側視圖；V. Description of the invention (3) In order to make the features obvious, the following is a detailed description such as the side view of circle 1A-1E;

明之上述和其他目的、特徵、和優 特舉本發明較佳實施例，並配合所附圖^巧 :我國公告第348306號半導體元件型.皮止 衣w步驟 第2A-The above and other objects, features, and advantages of the present invention are described in detail with reference to the preferred embodiments of the present invention, and in conjunction with the accompanying drawings: China National Publication No. 348306 semiconductor device type. Leather stopper steps 2A-

驟之侧衢Uj， 第2G圖^本 第3八-3祕： 驟之側視圖； 本發明第一較佳實施例半導體元件製造+ 發明第一較佳實施例半導體元件之上視圖 本發明第二較佳實施例半導體元件製造+ 及 v 【=明^明第二較佳實施例半導體元件之上視圖 101 封膠體 102 晶片 103 焊墊 104 導線 105 球塾 106 金屬鍍膜 107 凸點 108 承座 200 承座 201 晶片區 202 金屬鍍唭 203 球塾 204 導線 205 封膠體 206 外接腳 210 晶片 211 焊墊 300 承座 301 晶片區 302 金屬鍍膜 303 球墊 304 導線 305 封膠體 306 外接腳 310 晶片 311 焊墊 A 黏膠層The side of the step Uj, Fig. 2G ^ The 3rd and third steps of this book: the side view of the step; the first preferred embodiment of the invention semiconductor device manufacturing + the first preferred embodiment of the semiconductor device top view of the invention Second preferred embodiment semiconductor element manufacturing + and v [= Ming ^ Ming Second preferred embodiment semiconductor element top view 101 encapsulant 102 wafer 103 solder pad 104 wire 105 ball sphere 106 metal coating 107 bump 108 socket 200 Socket 201 Wafer area 202 Metal plated 203 Ball ball 204 Wire 205 Sealing body 206 External pin 210 Wafer 211 Solder pad 300 Socket 301 Wafer area 302 Metal coating 303 Ball pad 304 Wire 305 Sealing body 306 External leg 310 Wafer 311 Solder pad A adhesive layer

^432556 ^_ ________ ___ 五、發明說明（4) 【實施例說明】 本發明之晶片承座及製造方法，其主要在半導體元件之 承座未黏貼晶片〔die attachment〕前，在該承座之金屋‘ 膜未受由黏貼晶片產生溢膠及黏膠加熱後化學反應所釋放 氣體污染的情況下，在該金屬膜上先形成球墊，以提升導 線在球墊上的焊接度。 明參照第一A至二C圖所示，本發明第一較佳實施例主要 包含一承座200、一晶片區201、數個金屬鍍膜2〇2及數個 球塾203。該承座200表面設有晶片區201供晶片設置，該 承座200之晶片區201周圍凹穴部内設有金屬鍍膜2〇2供進 行打球墊203，將該數個凹穴部設置成外接腳佈局。 請再參照第二Β及二C圖所示’打線機臺將導線一端燒結 成球體後’在該承座2 0 0之金屬鍍膜2 0 2上進行打球墊，因 此，該承座200之金屬鍍膜202上未受溢膠及黏膠加熱釋放 氣體污染前先形成球墊203，進使提升導線在球墊2〇3上焊 接度。 l 凊再參照第二C圖所示，將一晶片21 〇以黏膠層a黏貼於 該承座2 0 0之晶片區2 01上，使得該承座2 〇 〇與晶片2 j 〇形成 一體，此時，由該黏膠層A加熱後化學反應所釋放氣體對 球塾203頂部祇能造成-次且相對較少的污染，而由該黏 膠層A之溢膠則對球墊203頂部打線區則不會造成直接污 染，如此可以降低該焊墊區累計污染的機會並能提升導 在球墊203上焊接度。 請再參照第二D、二E及二G圖所示 '打線機臺將數條導^ 432556 ^ _ ________ ___ V. Description of the invention (4) [Embodiment description] The wafer holder and manufacturing method of the present invention are mainly before the die attachment of the semiconductor element is attached to the die. In the case where the "Jinwu" film is not contaminated by the gas released from the adhesive wafer and the gas released by the chemical reaction after the adhesive is heated, a ball pad is first formed on the metal film to improve the solderability of the wire on the ball pad. As shown in Figures 1A to 2C, the first preferred embodiment of the present invention mainly includes a holder 200, a wafer region 201, a plurality of metal plating films 202, and a plurality of ball 203s. A wafer region 201 is provided on the surface of the socket 200 for wafer setting, and a metal plating film 202 is provided in the cavity portion around the wafer region 201 of the socket 200 for the playing pad 203. The plurality of cavity portions are provided as external legs. layout. Please refer to Figures 2B and 2C again, "After the wire machine sinters one end of the wire into a sphere," perform the ball pad on the metal coating 2 0 2 of the holder 200. Therefore, the metal of the holder 200 The ball pad 203 is formed on the coating 202 before being contaminated by overflowing glue and viscose to release gas, and the soldering degree of the lead wire on the ball pad 203 is improved. l Referring again to the second figure C, a wafer 21 is adhered to the wafer area 2 01 of the holder 200 with an adhesive layer a, so that the holder 200 is integrated with the wafer 2 j 〇 At this time, the gas released by the chemical reaction after the adhesive layer A is heated can only cause one-time and relatively little pollution to the top of the ball 203, and the overflowing glue of the adhesive layer A causes the top of the ball pad 203 to be contaminated. The wire bonding area will not cause direct pollution, which can reduce the chance of accumulated pollution in the bonding pad area and improve the degree of welding on the ball pad 203. Please refer to the second D, two E, and two G diagrams again.

r4 325 5 6 五、發明說明（5) 線204從該晶片21〇之焊墊211打線連接於相對應的承座200 之球墊203以形成通路’由於導線2〇4在污染程度相對較少 的球塾203上進行打線，因此該球墊2〇3及導線204之間仍 然具有良好的焊接度β 請再參照第二Ε圖所示，在該承座200上注模灌膠形成一 封膠體205 ’此時，該晶片210的上表面由該封膠體20 5封 裝’而該晶片210的底表面由該承座2〇〇封裝。 請再參照第二F圖所示，將該承座200從晶片210及封膠 體205上除去’而在半導體元件上保留封膠體2〇5及金屬鍍 膜2 02 ’使得該半導體元件之封膠體2〇5底表面露出金屬鍍 膜202形成該半導體元件凸點狀之外接腳。 請參照第三Α至三C圖所示，本發明第二較佳實施例主要 包含一承座300、一晶片區301、數個金屬鍍膜302及數個 球塾30 3。該承座300表面設有晶片區301供晶片設置，該 承座300之晶片區301周圍設有金屬鍍膜3〇2供進行打萍墊 3 0 3 ’該第二較佳實施例與第一較佳實施例差異係該象座 300直接在表面上將數個金屬鍍膜3〇2設置成外接腳佈局。 請參照第三E至三G圖所示’該第二較佳實施例接著進行 與第一較佳實施例相同的製程步驟。在該承座3 〇〇之金屬 錢膜302上進行打球墊303。再將一晶片310以黏膠層A黏貼 於該承座300之晶片區301上。再將數條導線304從該晶片 310之烊墊311打線連接於相對應的承座3〇〇之球墊3 〇3以形 成通路。在該承座300上灌膠形成一封膠體3〇5。將該承座 300從晶片310及封膠體305上除去，使得該半導體元件之r4 325 5 6 V. Description of the invention (5) The wire 204 is wired from the pad 211 of the wafer 21 and connected to the ball pad 203 of the corresponding seat 200 to form a path. Because the wire 204 is relatively less polluted The ball ball 203 is wired, so the ball pad 203 and the wire 204 still have a good degree of soldering β. Please refer to the second figure E, and injection molding on the socket 200 to form a seal Colloid 205 'At this time, the upper surface of the wafer 210 is encapsulated by the encapsulant 20 5' and the bottom surface of the wafer 210 is encapsulated by the holder 200. Please refer to FIG. 2F again, remove the holder 200 from the wafer 210 and the sealing compound 205, and leave the sealing compound 2 05 and the metal plating film 2 02 on the semiconductor element, so that the sealing element 2 of the semiconductor element 〇 The metal plating film 202 is exposed on the bottom surface to form the bump-shaped external pins of the semiconductor element. Please refer to FIGS. 3A to 3C, the second preferred embodiment of the present invention mainly includes a holder 300, a wafer region 301, a plurality of metal coatings 302, and a plurality of balls 303. A wafer region 301 is provided on the surface of the holder 300 for the wafer setting, and a metal plating film 30 is provided around the wafer region 301 of the holder 300 for the padding pad 3 0 3 'This second preferred embodiment is compared with the first The difference between the preferred embodiments is that the image base 300 directly sets a plurality of metal plating films 30 on the surface as an external pin layout. Please refer to the third E-three G diagrams. The second preferred embodiment is followed by the same process steps as the first preferred embodiment. A ball pad 303 is performed on the metal money film 302 of the holder 3,000. Then, a wafer 310 is adhered to the wafer region 301 of the holder 300 with an adhesive layer A. Then, a plurality of wires 304 are wired from the pad 311 of the chip 310 to the ball pad 3 of the corresponding holder 300 to form a path. The holder 300 is filled with glue to form a colloid 305. The holder 300 is removed from the wafer 310 and the sealing compound 305, so that the semiconductor device

五、發明說明（6) 封膠體305底表面露出金屬鍍膜3 〇2形成該半導體元件平片 狀之外接腳 請再參照第一A至一E圖所示，我國公告第348306號在承 座108上打球墊1〇5前已經進行黏貼晶片製裎[die attachment process〕，因此，在金屬鍍膜1〇6上容易被 溢膠或加熱後化學反應所釋放氣體而污染，累計先前已沉 積一些污染物如碳氫化化物，將造成造成球墊〗〇5與金屬 鑛膜106的焊接度〔bondability〕不佳、甚至會產生脫 落。請再參照第二A至二F圖及第三A至三F圖所示，民觀， 本發明半導體元件在承座2〇〇及300上未進行黏貼晶片製程 前先進行打球墊203及303，使原留在金屬鍍膜202及302上 的污染物不會留在該球墊2 03及303上，因而在該球墊203 及303上進行打線製程時可提升焊接度。 請再參照第二A至二F囷及第三A至三F圖所示，本發明半 導體元件之金屬鍍膜202及302與球墊2 03及3 03之材#斗不盡 然相同’因而在該金屬鍍膜2 02及3 02受污染後，屬鍵 膜202及302與球墊203及303的鍵結不佳而導致該金屬鍍膜 202及302與球墊203及303的焊接度不佳，因而在該金屬鍍 膜202及302受黏貼晶片製程污染前進行打球墊。該球墊 203及303呈較高的高廑，而減低該球墊203及303受溢膠直 接污染，由於球墊203及303與導線204及304材料相同，縱、 使該球墊203及303受加熱釋放氣體污染後，該污染對該球 墊2 03及3 03與導線204及304之間的鍵結影馨有限，因而不 會減低該球墊2 03及303與導線2 04及3 04之間的焊接度《金V. Description of the invention (6) The bottom surface of the sealing compound 305 is exposed with a metal plating film 3 〇2 to form the flat chip-shaped outer pins of the semiconductor element. Please refer to the first A to E diagrams. The die attachment process has been carried out before the batting pad 105, so the metal coating 10 is easily contaminated by overflowing gas or gas released by chemical reactions after heating, and some pollutants have been deposited previously. Such as hydrocarbon, will cause the ball pad [05] and the metal ore film 106 [bondability] poor [bondability], or even fall off. Please refer to the second A to F diagrams and the third A to F diagrams. From the perspective of the public, the semiconductor elements of the present invention are subjected to the ball pads 203 and 303 before the wafer bonding process is performed on the seats 200 and 300. , So that the pollutants originally left on the metal plating films 202 and 302 will not remain on the ball pads 20 03 and 303, so the welding degree can be improved when the wire pad process is performed on the ball pads 203 and 303. Please refer to the second A to second F 囷 and the third A to three F, as shown in the figures. The metal coatings 202 and 302 of the semiconductor element of the present invention are not the same as the material of the ball pad 2 03 and 3 03. After the coatings 2 02 and 3 02 are contaminated, the bond between the key films 202 and 302 and the ball pads 203 and 303 is not good, resulting in poor welding between the metal coatings 202 and 302 and the ball pads 203 and 303. Before the metal coatings 202 and 302 are contaminated by the bonding wafer manufacturing process, a ball pad is used. The ball pads 203 and 303 have a high height, and the ball pads 203 and 303 are directly contaminated by spilled glue. Because the ball pads 203 and 303 are the same material as the wires 204 and 304, the ball pads 203 and 303 are vertically and horizontally made. After being contaminated by gas released by heating, the contamination of the ball pad 2 03 and 3 03 and the wires 204 and 304 is limited, so the ball pad 2 03 and 303 and the wire 2 04 and 3 04 will not be reduced. The degree of welding between

'^4 325 5 β ^— -- ^ —______ I、發明說明（7) ' ----- 屬銀膜202及302與球墊203及303採用完全不相同材料，而 利用本發明在該金屬鍍膜2〇2及3〇2受黏貼晶片製程污染前 進行打球墊203及303的方法，使得打線焊接度提升而増加， ^品可靠度。或金屬鍍膜2〇2及302與球墊203及303採用完 全相同材料’而亦利用本發明在該金屬鍍膜2〇2及3〇2受黏 、占a曰片製程污染剐進行打球塾2 〇 3及3 0 3的方法，仍使得打 線焊接度提升而相對地可增加產品可靠度。 雖然本發明已以前述較佳實施例揭示，然其並非用以限 1本發明，任何熟習此技藝者，在不脫離本發明之精神和 範圍内，當可作各種之更動與修改，因此本發明之保護範1 圍當視後附之申請專利範圍所界定者為準。'^ 4 325 5 β ^ —-^ —______ I. Description of the invention (7)' ----- The silver films 202 and 302 and the ball pads 203 and 303 are completely different materials, and the invention is used in this The method of performing the ball pads 203 and 303 before the metal coatings 002 and 302 are contaminated by the bonding wafer manufacturing process can improve the wire bonding and increase the reliability. Or the metal coatings 002 and 302 are made of the same material as the ball pads 203 and 303 ', and the present invention is also used in the metal coatings 002 and 302 that are contaminated and pollute the manufacturing process. The 3 and 3 0 3 methods still improve the wire soldering and relatively increase product reliability. Although the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of invention 1 shall be determined by the scope of the attached patent application.

LL

Claims (1)

^4 325 5 6 、申請專利範圍 1、 一種晶 一承座 數個球 晶片區 由於該 不致受 染，因 2、 依申請 表面設 以供進 3、 依申請 表面上 該承座 4、 依申請 座上進 接數條 膠體上 5、 一種晶 一承座 該金屬 上形成 將一晶 晶片之 路； 片承座構造， ，其表面設有 墊，其被設置 上未進行晶片 晶片區上未進 晶片黏貼製程 而該金屬鍍膜 專利範圍第1 有數個凹穴：部 行打球墊。 專利範圍第1 設有數個金屬 表面高的部位 專利範圍第1 行黏貼晶片製 導線及進行注 將該承座除去 片承座製造方 設有數個金屬 鍍膜上以打線 球墊；及 片以黏膠層黏 焊墊打線連接^ 4 325 5 6 、 Applicable patent scope 1. A kind of crystal-bearing several ball wafer areas are not affected because of 2. Because the surface is provided for application according to the application 3, according to the application on the surface 4, according to the application A number of colloids are mounted on the seat. A kind of crystal and a seat are formed on the metal to form a wafer. The wafer seat structure has a pad on its surface and is not placed on the wafer area. The wafer bonding process and the first metal coating patent range have a number of recesses: a batting pad. The first scope of the patent is provided with several parts with a high metal surface. The first line of the patent scope is pasted with a wire made of a chip and the socket is removed. The socket is manufactured by a plurality of metal coatings for wire ball pads. Wire bonding with layer bonding pads 其包含： 一晶片區及數個金屬鍍膜；及 於金屬鍍膜上，此時，該承座之 黏貼製程； 行晶片黏貼製程，使該金屬鍍膜 所產生溢膠及加熱釋放氣體的污 與球墊之間具有較i焊接度 項所述之晶片承座_其中該承座 ，數個金屬鍍膜免於該凹穴部 項所述之晶片承座，其中該承座 鍍膜’使該數個鑛膜具有較 以供進行打球塾 項所述之晶片承中在該承 程黏貼一晶片、打線製程連 模製程形成一封膠體後，從該封, .Η Άν, υ 〇 * υ’.ά卜 \ 法，其包含步驟： 鍍膜； 機臺打球墊’使得在該金屬鍍膜^ 貼於該承座上，打線機臺則將該 於相對應的承座之球墊以形成通It includes: a wafer area and several metal plating films; and on the metal plating film, at this time, the sticking process of the holder; the wafer sticking process is performed, so that the metal plating film generates overflow glue and heat releases the dirt and ball pads There are wafer holders described in the item i Solderability _ where the holder, several metal coatings are exempt from the wafer holders described in the cavity section, wherein the holder coatings' make the several mineral films There is a wafer carrier for carrying out the batting project described above. After pasting a wafer on the process, a continuous molding process and a molding process, a gel is formed from the seal, .Η Άν, υ 〇 * υ'.ά 卜 \ The method includes the steps of: coating; a machine ball pad so that the metal coating film is affixed to the base, and the wire machine forms the ball pad on the corresponding base to form a ball rr4 32Bh^____ 六、申請專利範圍 由於該承座上未進行晶片黏貼製程，使該金屬鍍膜不 致受晶片黏貼製程所產生溢膠及加熱釋放氣體的污染 ，因而在該承座上進行打球墊製程時，該金屬鍍膜與 球墊之間具有較佳焊接度。rr4 32Bh ^ ____ 6. Scope of patent application Because the wafer bonding process is not performed on the holder, the metal coating is not contaminated by the overflow glue and heat release gas generated by the wafer bonding process, so the ball pad process is performed on the holder. In this case, the metal plating film and the ball pad have a better welding degree. 6、依申請專利範圍第5項所述之晶片承座製造方法，其 中該承座表面設有數個凹穴部，數個 膜則設於 該CJ穴部以供進行打球墊。 7、 依申請專利範圍第5項所述之晶片承 中該承座 表面上設有數個金屬嫉膜，使該數個 膜具有較 該承座表面高的部位以供進行打球墊。 8、 依申請專利範圍第5項所述之晶片承座製造方法，其 中在該承座上進行注模製程形成一封膠體後，從該封 膠體上將該承座除去。6. The method for manufacturing a wafer holder according to item 5 of the scope of the patent application, wherein the surface of the holder is provided with a plurality of recessed portions, and a plurality of membranes are provided in the CJ recessed portion for a playing mat. 7. According to the wafer support described in Item 5 of the patent application, the surface of the holder is provided with a plurality of metal membranes, so that the plurality of films have positions higher than the surface of the holder for playing mats. 8. The method for manufacturing a wafer holder according to item 5 of the scope of the patent application, wherein an injection molding process is performed on the holder to form a colloid, and then the holder is removed from the sealing colloid. C:\Program Fi les\patent\PK7054.ptd 第12頁C: \ Program Fi les \ patent \ PK7054.ptd Page 12
TW088121438A 1999-12-06 1999-12-06 Die pad and method for manufacturing the same TW432556B (en)

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