TW429619B - Method of forming memory cell - Google Patents
Method of forming memory cellInfo
- Publication number
- TW429619B TW429619B TW88122930A TW88122930A TW429619B TW 429619 B TW429619 B TW 429619B TW 88122930 A TW88122930 A TW 88122930A TW 88122930 A TW88122930 A TW 88122930A TW 429619 B TW429619 B TW 429619B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- bit line
- memory cell
- stop layer
- Prior art date
Links
Abstract
This invention provides the method for forming memory cell and at least includes the followings. At first, a substrate is provided and a layer of dielectric structure is formed on substrate. A conduction layer and a polish stop layer are sequentially formed on the dielectric structure layer. Pattern of bit line is defined on substrate and bit line is formed. After that, spacer is formed on sidewalls of conduction layer and polish stop layer, and is followed by performing the salicide process. On the bit line, an oxide layer is filled in. Chemical mechanical polishing process or etching process is then performed onto this oxide layer till reaching the etch stop layer. Finally, the polish stop layer is removed and a word line is formed by depositing a layer of polysilicon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88122930A TW429619B (en) | 1999-12-24 | 1999-12-24 | Method of forming memory cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88122930A TW429619B (en) | 1999-12-24 | 1999-12-24 | Method of forming memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429619B true TW429619B (en) | 2001-04-11 |
Family
ID=21643557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88122930A TW429619B (en) | 1999-12-24 | 1999-12-24 | Method of forming memory cell |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW429619B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100367517C (en) * | 2002-02-21 | 2008-02-06 | 松下电器产业株式会社 | Semiconductor storage device and its manufacturing method |
-
1999
- 1999-12-24 TW TW88122930A patent/TW429619B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100367517C (en) * | 2002-02-21 | 2008-02-06 | 松下电器产业株式会社 | Semiconductor storage device and its manufacturing method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |